A magnetic analyzer and an ion implanter

Abstract

This application discloses a magnetic analyzer and an ion implanter. The magnetic analyzer includes an ion beam channel, which includes a flight zone and a first inner wall and a top wall surrounding the flight zone. The ion beam channel includes a first partition disposed between the first inner wall and the flight zone. The first partition has multiple first through holes, and a receiving space is formed between the first partition and the first inner wall. This application not only significantly reduces the probability of contaminant particles being carried out of the magnetic analyzer, thereby effectively avoiding ion implantation process failure, but also greatly extends the manual maintenance cycle or spare parts replacement cycle, thus effectively reducing maintenance costs.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to a magnetic analyzer and an ion implanter. BACKGROUND

[0002] Ion implantation process is one of the most important processes of current LTPS (Low Temperature Poly-Silicon) display technology, and the control of particles is particularly important in the ion implantation process.

[0003] Hot electrons released by the ion source will collide with the raw gas. Under the action of micro-physical collision, the raw gas will decompose into high-energy mixed ion plasma. After being screened by the magnetic analyzer, only the selected process ions can pass through the arc-shaped ion beam channel perfectly, while the ion beams filtered out by the magnetic field will collide with the inner wall of the channel to produce various particles, which will accumulate in the ion beam channel. The selected high-energy ion beam sometimes carries particles to the wafer process chamber during flight, which causes the ion implantation process to fail in the contaminated area of the wafer or glass surface.

[0004] In the prior art, the carbon plate components of the inner wall of the ion beam channel are replaced periodically by artificial cleaning or replacement of spare parts to reduce particles. However, if the artificial maintenance period is long or the spare part replacement period is long, a large number of particles will accumulate in the arc-shaped channel of the magnetic analyzer, and the particles accumulated in the arc-shaped channel will increase with the increase of the use time of the equipment. The particles accumulated in the maintenance period will be randomly carried into the wafer process chamber during the process, which will cause the ion implantation process to fail, ultimately affecting the product yield; if the artificial maintenance period is short or the spare part replacement period is short, it will increase the burden of personnel and the cost of equipment, resulting in a significant increase in maintenance cost and a decrease in production efficiency. SUMMARY

[0005] The technical problem solved by the present application is to provide a magnetic analyzer and an ion implanter, which can solve the problem of ion implantation process failure or high maintenance cost caused by by-products particles in the prior art.

[0006] To solve the above technical problems, the first technical solution adopted by the present application is to provide a magnetic analyzer, which comprises an ion beam channel, the ion beam channel comprises a flight area and a first inner wall and a top wall surrounding the flight area, the ion beam channel comprises a first partition plate, the first partition plate is arranged between the first inner wall and the flight area; wherein the first partition plate is provided with a plurality of first through holes, and a containing space is formed between the first partition plate and the first inner wall.

[0007] The ion beam channel further comprises a second partition plate; the second partition plate is arranged between the first partition plate and the first inner wall, and the second partition plate is provided with a plurality of second through holes; at least part of the first through holes and the second through holes are arranged alternately.

[0008] The first partition plate comprises a plurality of first protrusions arranged between adjacent two first through holes, and the second partition plate comprises a plurality of second protrusions arranged between adjacent two second through holes, and the protrusion directions of the first protrusions and the second protrusions are both towards the flight area.

[0009] The first inner wall is provided with third through holes, and the third through holes are in communication with the vacuum exhaust device; the plurality of third through holes are uniformly distributed on the first inner wall.

[0010] The first inner wall comprises a plurality of third protrusions arranged between adjacent two third through holes, and the protrusion direction of the third protrusions is towards the flight area.

[0011] The shapes of the first through holes and the second through holes include a circle, a rectangle or a slit; the plurality of first through holes are uniformly distributed on the first partition plate, and the plurality of second through holes are uniformly distributed on the second partition plate.

[0012] The maximum width of the first through hole and the maximum width of the second through hole are both not less than 1 cm.

[0013] The first partition plate and the second partition plate are sequentially arranged in parallel on the inner side of the first inner wall.

[0014] A plurality of conductive coils are attached to the outer wall of the ion beam channel, and the conductive coils are used to generate a preset magnetic field in a preset area in the flight area.

[0015] To solve the above technical problems, the second technical scheme adopted by the present application is to provide an ion implanter comprising a connected ion source, the above-mentioned magnetic analyzer and an ion implantation device, and the magnetic analyzer is used to screen and transmit the ions generated by the ion source to the ion implantation device.

[0016] The beneficial effects of the present application are: different from the prior art, the present application provides a magnetic analyzer and an ion implanter, by setting a first partition plate between the first inner wall of the magnetic analyzer and the flight area, and setting a plurality of through holes on the first partition plate, the filtered ion beam can slide through the first through hole on the first partition plate into the containing space formed between the first partition plate and the first inner wall. Due to the blocking of the first partition plate, the particle falling into the containing space is difficult to enter the flight area of the ion beam channel through the first through hole again, thereby greatly reducing the probability of the particle being carried out of the magnetic analyzer, and effectively avoiding the failure of the ion implantation process. Further, since the particle can only enter the flight area through the first through hole when the first bottom wall and the first partition plate are full of particles, the artificial maintenance period or spare part replacement period is greatly prolonged, thereby effectively reducing the maintenance cost. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the example description will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0018] Figure 1 is a sectional view of a first specific embodiment of an embodiment of the magnetic analyzer of the present application;

[0019] Figure 2 is a sectional view of a second specific embodiment of an embodiment of the magnetic analyzer of the present application;

[0020] Figure 3 is a sectional view of the magnetic analyzer in Figure 2

[0021] Figure 4 is an enlarged structural schematic view of the A area in Figure 3

[0022] Figure 5 is a sectional view of a third specific embodiment of an embodiment of the magnetic analyzer of the present application;

[0023] Figure 6 is a sectional view of a fourth specific embodiment of an embodiment of the magnetic analyzer of the present application;

[0024] Figure 7 is a sectional view of a fifth specific embodiment of an embodiment of the magnetic analyzer of the present application;

[0025] Figure 8 is a structural schematic view of an embodiment of the ion implanter of the present application. DETAILED DESCRIPTION ​​

[0026] The technical solutions in the embodiments of the present application will be described clearly and completely in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0027] The terms used in the embodiments of the present application are merely for the purpose of describing the specific embodiments, and are not intended to limit the present application. The singular forms "a", "an" and "the" used in the embodiments of the present application and the appended claims are also intended to include the plural forms, unless otherwise clearly indicated. "Plural" generally includes at least two, but does not exclude the case of including at least one.

[0028] It should be understood that the term "and / or" used herein is only to describe the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " in this paper generally represents that the front and rear associated objects are a "or" relationship.

[0029] It should be understood that the terms "include", "contain" or any other variant used herein are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or includes elements inherent to such process, method, article or device. Without more limitations, the elements defined by the statement "include" do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0030] Ion implantation technology is generally realized through an ion implanter, which generally includes an ion source, a magnetic analyzer and a wafer process chamber connected in sequence. The magnetic analyzer transmits the ions generated by the ion source to the wafer process chamber through an ion beam channel to complete ion implantation after screening.

[0031] In the prior art, the magnetic analyzer is cleaned periodically by manual or the carbon plate component of the inner wall of the ion beam channel is replaced to reduce the particles. However, if the manual maintenance period is long or the spare part replacement period is long, a large number of particles will accumulate in the arc-shaped channel of the magnetic analyzer, and the particles accumulated in the arc-shaped channel will increase with the increase of the use time of the equipment. The particles accumulated in the maintenance period will be randomly carried into the wafer process chamber during the process, thereby causing the ion implantation process to fail, and finally affecting the product yield. If the manual maintenance period is short or the spare part replacement period is short, the burden of personnel and the cost of equipment will be additionally increased, thereby greatly increasing the maintenance cost and reducing the production efficiency.

[0032] Based on the above, the present application provides a magnetic analyzer and an ion implanter, which can solve the problems of ion implantation process failure or high maintenance cost in the prior art.

[0033] Please refer to Figure 1 , Figure 1 is a cross-sectional view of a first specific embodiment of an embodiment of the magnetic analyzer of the present application.

[0034] In this embodiment, the magnetic analyzer 100 includes an ion beam channel 10, the ion beam channel 10 includes a flight zone 30 and a first inner wall 102 and a top wall 101 surrounding the flight zone, the ion beam channel 10 includes a first partition plate 21, the first partition plate 21 is arranged between the first inner wall 102 and the flight zone 30; wherein the first partition plate 21 is provided with a plurality of first through holes 210, and a containing space 40 is formed between the first partition plate 21 and the first inner wall 102.

[0035] In this embodiment, the first inner wall 102 includes a bottom wall arranged opposite to the top wall 101 and a side wall connected to the top wall 101 at one end. In one specific implementation scenario, the first partition plate 21 is arranged between the bottom wall and the flight zone 30. In another specific implementation scenario, the first partition plate 21 is arranged between the side wall and the flight zone 30, which is not limited by the present application.

[0036] For ease of understanding, the present application is described with the structure that the first partition plate 21 is arranged between the bottom wall and the flight zone 30.

[0037] In this embodiment, the ion beam channel 10 is an arc-shaped channel, and the cross section thereof is rectangular or other shapes, which is not limited herein.

[0038] In this embodiment, the part of the flight zone 30 connected to the ion source is a mixed ion inlet, the part of the flight zone 30 connected to the wafer process chamber is a process ion outlet, and the mixed ion inlet and the process ion outlet are at an angle of 90°.

[0039] The outer wall of the ion beam channel 10 is provided with a plurality of conductive coils (not shown in the figure), which are used to generate a preset magnetic field in the preset area in the flight area.

[0040] Specifically, by adjusting the current of the conductive coils, a specific distribution of magnetic field is generated in the area surrounded by the conductive coils in the ion beam channel 10. The specific magnetic field distribution in the ion beam channel 10 can only allow the process ion beam with a specific mass-to-charge ratio to pass through the ion beam channel 10 perfectly. That is, the ion beam selected by the magnetic analyzer 100 can leave the magnetic analyzer 100 via the flight area 30 under the action of the magnetic field.

[0041] Specifically, when the magnetic field size is determined, the deflection radius of the process ion under the magnetic field is wherein r is the deflection radius of the ion, m is the ion mass, q is the ion charge, E is the ion energy, and B is the magnetic field strength.

[0042] Since the radius R of the ion beam channel 10 is determined, by adjusting the magnetic field strength B, when the deflection radius r of the process ion is equal to the radius R of the ion beam channel 10, it can be ensured that the process ion beam with the required mass-to-charge ratio can pass through the arc-shaped track to the wafer process chamber to complete the ion implantation process, and the ions with other mass-to-charge ratios will hit the inner wall of the ion beam channel 10, thereby forming particles.

[0043] It can be understood that when the filtered particles hit the top wall 101 or the first inner wall 102 as the side wall, they will slide through the plurality of first through holes 210 on the first partition plate 21 into the accommodation space 40 formed between the first partition plate 21 and the first inner wall 102 as the bottom wall during the sliding process. Due to the obstruction of the first partition plate 21, the particles falling into the accommodation space 40 are difficult to pass through the first through holes 210 into the flight area 30 of the ion beam channel 10 again, thereby greatly reducing the probability of the particles being carried out of the magnetic analyzer 100, thereby effectively avoiding the failure of the ion implantation process. Further, since the particles can only enter the flight area through the first through holes 210 when the first inner wall and the first partition plate 21 are accumulated with particles, the artificial maintenance period or spare part replacement period is greatly extended, thereby effectively reducing the maintenance cost.

[0044] Please refer to Figure 2 , Figure 3 and Figure 4 , Figure 2 is a sectional view of a second specific embodiment of an embodiment of the magnetic analyzer of the present application, Figure 3 is Figure 2 a sectional view of the magnetic analyzer, Figure 4 is Figure 3 an enlarged structural schematic view of the A area in FIG. 8.

[0045] In the embodiment, the magnetic analyzer 200 comprises an ion beam channel 10, the ion beam channel 10 comprises a flight zone 30 and a first inner wall 102, a side wall 103 and a top wall 101 enclosing the flight zone, the ion beam channel 10 comprises a first partition plate 21 and a second partition plate 22, the first partition plate 21 is arranged between the first inner wall 102 and the flight zone 30, and a containing space 40 is formed between the first partition plate 21 and the first inner wall 102. The second partition plate 22 is arranged between the first partition plate 21 and the first inner wall 102; wherein the first partition plate 21 is provided with a plurality of first through holes 210, the second partition plate 22 is provided with a plurality of second through holes 220, and at least part of the first through holes 210 and the second through holes 220 are arranged alternately.

[0046] In the embodiment, the first inner wall 102 only comprises a bottom wall, and in other embodiments, the first inner wall 102 can also comprise a side wall, which is not limited in the application.

[0047] In the embodiment, the first partition plate 21 and the second partition plate 22 are arranged in parallel in sequence on the inner side of the first inner wall 102. In other embodiments, only the first partition plate 21 is arranged in parallel with the first inner wall 102, and the second partition plate 22 can be arranged obliquely, which is not limited in the application.

[0048] Wherein, the first partition plate 21 and the second partition plate 22 are both carbon plates.

[0049] In the embodiment, at least part of the first through holes 210 and the second through holes 220 are arranged alternately, which means that the orthographic projections of at least part of the first through holes 210 and the second through holes 220 on the first inner wall 102 do not coincide.

[0050] The structure of the first partition plate 21 and the second partition plate 22 is described by taking the A area as an example. In the embodiment, the orthographic projections of the plurality of first through holes 210 and the second through holes 220 on the bottom wall do not intersect as much as possible, so as to avoid that the particles falling off are brought into the flight zone 30 again. In other embodiments, the first through holes 210 and the second through holes 220 can partially intersect, which is not limited in the application.

[0051] In the embodiment, the shapes of the first through holes 210 and the second through holes 220 are circular. In other embodiments, the shapes of the first through holes 210 and the second through holes 220 can also be rectangular or slits, as long as it is ensured that the particles can fall off to the first inner wall through the first through holes 210 and the second through holes 220, which is not limited in the application.

[0052] Further, in order to ensure that the particle can slide from the first through hole 210 and the second through hole 220, preferably, the maximum width of the first through hole 210 and the second through hole 220 is not less than 1 cm. That is, if the shape of the first through hole 210 and the second through hole 220 is circular, the diameter of the first through hole 210 and the second through hole 220 is not less than 1 cm; if the first through hole 210 and the second through hole 220 are rectangular or slits, the maximum width of the rectangular or slits is not less than 1 cm.

[0053] In the embodiment, the shape of the first through hole 210 and the second through hole 220 is the same. In other embodiments, the shape of the first through hole 210 and the second through hole 220 can be different, and even if they are the same type of through hole, the hole diameter or width can be different, which is not limited in the application.

[0054] In the embodiment, the plurality of first through holes 210 are uniformly distributed on the first partition plate 21, and the plurality of second through holes 220 are uniformly distributed on the second partition plate 22. In a preferred embodiment, the plurality of first through holes 210 are arrayed on the first partition plate 21, and the plurality of second through holes 220 are arrayed on the first partition plate 21. In other embodiments, the plurality of first through holes 210 and the plurality of second through holes 220 can also be distributed on the first partition plate 21 and the second partition plate 22 in other ways, which is not limited in the application.

[0055] It can be understood that when the filtered process ion byproducts (i.e. particles) hit the top wall 101, the first partition plate 21 or the side wall 103 between the top wall 101 and the first partition plate 21, they will slide through the plurality of first through holes 210 on the first partition plate 21 to the second partition plate 22 and then through the second through holes 220 on the second partition plate 22 to the containing space 40, so as to avoid the particles from depositing on the first partition plate 21. Since the first through holes 210 on the first partition plate 21 and the second through holes 220 on the second partition plate 22 are staggered, the particles falling into the containing space 40 are difficult to enter the flight area 30 of the ion beam channel 10 again through the first through holes 210, thereby greatly reducing the probability of the particles being carried out of the magnetic analyzer 100, effectively avoiding the wafer or glass area being blocked by the particles, and avoiding the failure of the ion implantation process. Further, the particles can only enter the flight area 30 through the second through holes 220 and the first through holes 210 when the containing space 40 between the first inner wall 102 and the second partition plate 22 is full of particles, thereby greatly prolonging the artificial maintenance period or spare part replacement period, and effectively reducing the maintenance cost.

[0056] Please refer to Figure 5 , Figure 5is a sectional view of a third specific embodiment of the magnetic analyzer of the present application.

[0057] In the embodiment, the magnetic analyzer 300 comprises an ion beam channel 10, the ion beam channel 10 comprising a flight region 30 and a first inner wall 102, a side wall 103 and a top wall 101 enclosing the flight region, the ion beam channel 10 comprising a first partition plate 21 and a second partition plate 22, the first partition plate 21 being arranged between the first inner wall 102 and the flight region 30, and a containing space 40 being formed between the first partition plate 21 and the first inner wall 102. The second partition plate 22 is arranged between the first partition plate 21 and the first inner wall 102. The first partition plate 21 is provided with a plurality of first through holes 210, and the second partition plate 22 is provided with a plurality of second through holes 220. At least part of the first through holes 210 and the second through holes 220 are arranged alternately.

[0058] In the embodiment, the first inner wall 102 only comprises a bottom wall. In other embodiments, the first inner wall 102 can also comprise a side wall, which is not limited in the present application.

[0059] The following only describes the parts of the embodiment different from the second specific embodiment.

[0060] In the embodiment, the first partition plate 21 comprises a plurality of first protrusions 201 arranged between adjacent two first through holes 210, and the second partition plate 22 comprises a plurality of second protrusions 202 arranged between adjacent two second through holes 220. The protruding directions of the first protrusions 201 and the second protrusions 202 are both towards the flight region 30.

[0061] Specifically, the first protrusions 201 are gratings between adjacent two first through holes 210, and the second protrusions 202 are gratings between adjacent two second through holes 220.

[0062] It can be understood that after the particle hits the first protrusions 201, the sliding efficiency of the particle on the first partition plate 21 can be improved due to the arc-shaped upper surface of the first protrusions 201. Meanwhile, the sliding efficiency of the particle on the second partition plate 22 can be improved due to the arc-shaped upper surface of the second protrusions 202, thereby improving the probability of the particle sliding into the containing space 40, and avoiding the accumulation of the particle on the gratings of the first partition plate 21 and the second partition plate 22.

[0063] Please refer to Figure 6 , Figure 6 is a sectional view of a fourth specific embodiment of the magnetic analyzer of the present application.

[0064] In the embodiment, the magnetic analyzer 400 comprises the ion beam channel 10, the ion beam channel 10 comprises the flight region 30 and the first inner wall 102, the side wall 103 and the top wall 101 enclosing the flight region, the ion beam channel 10 comprises the first partition plate 21 and the second partition plate 22, the first partition plate 21 is arranged between the first inner wall 102 and the flight region 30, and the first partition plate 21 and the first inner wall 102 form the containing space 40 therebetween. The second partition plate 22 is arranged between the first partition plate 21 and the first inner wall 102; wherein the first partition plate 21 is provided with a plurality of first through holes 210, the second partition plate 22 is provided with a plurality of second through holes 220, and at least part of the first through holes 210 and the second through holes 220 are arranged alternately.

[0065] In the embodiment, the first inner wall 102 only comprises the bottom wall, and in other embodiments, the first inner wall 102 can also comprise the side wall, which is not limited in the application.

[0066] The following only describes the part of the embodiment different from the third specific embodiment.

[0067] In the embodiment, the first inner wall 102 is provided with a plurality of third through holes 230 distributed uniformly, and a plurality of vacuum exhaust devices 231 are embedded at the third through holes 230. Wherein, the vacuum exhaust devices 231 are connected with waste treatment devices (not shown in the figure) on the side away from the ion beam channel 10.

[0068] In the embodiment, the suction power of the vacuum exhaust devices 231 can be limited to achieve the purpose of sucking away the particles falling into the containing space 40 without affecting the normal flight of the ion beam screened out in the flight region 30.

[0069] It can be understood that the vacuum exhaust devices 231 can timely suck away the particles falling into the containing space 40 and discharge them into the waste treatment devices, and since the particles are continuously sucked away by the vacuum exhaust devices 231, they will not accumulate on the first inner wall 102, which not only avoids the particles being carried out of the magnetic analyzer 300, but also further prolongs the artificial maintenance period or the spare part replacement period, thereby effectively reducing the maintenance cost.

[0070] Further, since the first through holes 210 on the first partition plate 21 and the second through holes 220 on the second partition plate 22 are arranged alternately, the high-energy ion beam can also be avoided from directly hitting the first inner wall 102, thereby avoiding the vacuum exhaust devices 231 from being damaged due to the hitting. By protecting the vacuum exhaust devices 231, the maintenance cost can be further reduced.

[0071] Please refer to Figure 7 , Figure 7 is a sectional view of the fifth specific embodiment of the magnetic analyzer of the application.

[0072] In the embodiment, the magnetic analyzer 500 comprises the ion beam channel 10, the ion beam channel 10 comprises the flight region 30 and the first inner wall 102, the side wall 103 and the top wall 101 enclosing the flight region, the ion beam channel 10 comprises the first partition plate 21 and the second partition plate 22, the first partition plate 21 is arranged between the first inner wall 102 and the flight region 30, and the first partition plate 21 and the first inner wall 102 form the containing space 40 therebetween. The second partition plate 22 is arranged between the first partition plate 21 and the first inner wall 102; wherein the first partition plate 21 is provided with a plurality of first through holes 210, the second partition plate 22 is provided with a plurality of second through holes 220, and at least part of the first through holes 210 and the second through holes 220 are arranged alternately.

[0073] In the embodiment, the first inner wall 102 only comprises the bottom wall, and in other embodiments, the first inner wall 102 can also comprise the side wall, which is not limited in the application.

[0074] The following only describes the parts of the embodiment different from the fourth specific embodiment.

[0075] In the embodiment, the first inner wall 102 comprises a plurality of third protrusions 203 arranged between adjacent third through holes 230, and the protruding direction of the third protrusions 203 is towards the flight region 30.

[0076] It can be understood that after the particle slides onto the third protrusions 203, the sliding efficiency of the particle on the first inner wall 102 can be improved due to the arc-shaped upper surface of the third protrusions 203, thereby improving the probability of the particle sliding onto the vacuum exhaust device 231, improving the evacuation efficiency of the vacuum exhaust device 231, and avoiding the accumulation of the particle on the first inner wall 102.

[0077] In the embodiment, the first partition plate 21 comprises a plurality of first protrusions 201 arranged between adjacent two first through holes 210, and the second partition plate 22 comprises a plurality of second protrusions 202 arranged between adjacent two second through holes 220, and the protruding direction of the first protrusions 201 and the second protrusions 202 is towards the flight region 30.

[0078] It can be understood that through the synergistic effect of the first protrusions 201, the second protrusions 202 and the third protrusions 203, the sliding rate of the particle can be accelerated, thereby effectively avoiding the particle from being carried out of the magnetic analyzer 500, and then avoiding the ion implantation failure.

[0079] Please refer to Figure 8 , Figure 8 is a structural schematic diagram of an embodiment of the ion implanter of the application.

[0080] In the embodiment, the ion implanter 50 comprises an ion source 501, a magnetic analyzer 502 and a wafer process chamber 503 connected in sequence. The magnetic analyzer 502 transmits the ions generated by the ion source 501 to the wafer process chamber 503 after screening, and completes the ion beam implantation process in the wafer process chamber 503.

[0081] The ions generated by the ion source 501 are high-energy mixed ions.

[0082] In the embodiment, the magnetic analyzer 502 comprises an ion beam channel 5021, which is an arc-shaped channel comprising a top wall and a bottom wall. The inner side of the bottom wall comprises oppositely arranged first and second partitions, the second partition is arranged between the first partition and the bottom wall, the first partition is provided with a plurality of first through holes, and the second partition is provided with a plurality of second through holes. The first through holes and the second through holes are arranged alternately.

[0083] The specific structure of the magnetic analyzer 502 is shown in Figures 1-7 .

[0084] In the embodiment, the ion source 501 is connected with a plurality of external gas pipelines, which are used to decompose the raw material gas injected by the external gas pipelines into a mixed high-energy ion beam in a plasma state.

[0085] The ion source 501 comprises a plurality of filaments (not shown in the figure), each filament corresponding to at least one external gas pipeline. The filament releases hot electrons to dissociate the raw material gas into mixed high-energy ions under the impact of the hot electrons. The ion source 501 further comprises an acceleration electric field component (not shown in the figure) to form a high-energy mixed ion beam under the action of the acceleration electric field component, and the high-energy mixed ion beam enters the magnetic analyzer 502.

[0086] In the embodiment, the magnetic analyzer 502 screens the high-energy mixed ion beam to make the required ion beam pass through the ion beam channel 5021 and enter the ion implanter.

[0087] The mass-to-charge ratio of the ions is proportional to the radius of the arc-shaped trajectory of the ion beam channel 5021. According to different charge amounts, the mass-to-charge ratios are different, and the corresponding trajectory radii are different. Only the trajectory radius of the ion with a specific mass-to-charge ratio is the same as the radius of the ion beam channel, which can pass through perfectly. The ions with a mass-to-charge ratio greater than or less than the specific mass-to-charge ratio will impact the inner wall of the ion beam channel 5021.

[0088] Specifically, the required high-energy ion beam is usually boron ions (B + ) or phosphorus ions (P + ), and the raw material gas is usually boron trifluoride (BF3) or phosphine (PH3) gas.

[0089] It can be understood that the boron ions or phosphorus ions can enter the wafer process chamber 503 through the ion beam channel 5021 under the action of the magnetic field of the magnetic analyzer, and the remaining ions will slide to the second partition plate through the first through holes on the first partition plate and slide to the bottom wall through the second through holes on the second partition plate when hitting the inner wall of the ion beam channel 5021, so as to avoid the particle from being deposited on the first partition plate, and since the first through holes on the first partition plate and the second through holes on the second partition plate are staggered, it is difficult for the particle falling into the bottom wall to enter the flight area of the ion beam channel 5021 again through the first through holes, thereby greatly reducing the probability of the particle being carried into the wafer process chamber 503, and effectively avoiding the failure of ion implantation process. Further, since the particle can only enter the flight area through the second through holes and the first through holes when the particle accumulates between the bottom wall and the second partition plate, the artificial maintenance period or spare part replacement period is greatly extended, thereby effectively reducing the maintenance cost.

[0090] In a specific embodiment, the bottom of the ion beam channel 5021 further comprises a vacuum exhaust device, and the vacuum exhaust device is connected with a waste treatment device away from one side of the ion beam channel 5021, so as to timely exhaust the particle falling into the bottom wall and discharge it into the waste treatment device. Since the particle is continuously sucked away by the vacuum exhaust device, it will not accumulate on the bottom wall, not only avoiding the particle from being carried out of the magnetic analyzer 502, but also further extending the artificial maintenance period or spare part replacement period.

[0091] In another specific embodiment, the first partition plate comprises a plurality of first protrusions arranged between adjacent first through holes, the second partition plate comprises a plurality of second protrusions arranged between adjacent second through holes, and the bottom wall comprises a plurality of third protrusions arranged between adjacent third through holes, and the protruding directions of the first protrusions, the second protrusions and the third protrusions are all towards the top wall. It can be understood that since the surface of the protrusion is arc-shaped, the sliding efficiency of the particle on the first partition plate, the second partition plate and the bottom wall can be improved, and the particle can be prevented from accumulating on the first partition plate, the second partition plate or the bottom wall.

[0092] In the embodiment, the wafer process chamber 503 comprises a process chamber, a Faraday cup arranged in the process chamber, and a carrier. The front face of the Faraday cup corresponds to the outlet of the ion beam channel 5021, and is used to measure the incident intensity of the high-energy ion beam. The measured current can be used to determine the number of incident ions. The glass substrate to be processed is placed on the carrier. The carrier can rotate the glass substrate from horizontal to vertical. The carrier carrying the peeled substrate is arranged on a movable track between the outlet of the ion beam channel 5021 and the Faraday cup. The process front magnetic analyzer 502 screens and adjusts the required process ion beam. The Faraday cup receives the process ion beam from the outlet of the magnetic analyzer 502. When the current density reaches the requirement, the carrier carrying the glass substrate moves to the position of the ion beam outlet in a direction perpendicular to the ion beam. The process ion beam emitted from the ion beam outlet is uniformly injected into the required process ion on the surface of the substrate, and the ion implantation process is completed.

[0093] Specifically, for MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices, ion implantation is performed in the channel region to adjust the TFT (Thin Film Transistor) threshold voltage, and ion implantation is performed in the source-drain region to reduce the resistance and form a conductor region.

[0094] It can be understood that, since the particles are all controlled in the magnetic analyzer 502 and cannot be carried into the wafer process chamber 503, the ion implantation process failure can be effectively avoided, thereby improving the product yield.

[0095] In the embodiment, the ion implanter 50 further comprises a substrate conveying device 504. The substrate conveying device 504 is connected to the wafer process chamber 503 and is used to convey the processed substrate.

[0096] Compared with the prior art, the first partition plate and the second partition plate are arranged on the bottom wall of the magnetic analyzer, and a plurality of through holes are arranged on the first partition plate and the second partition plate, respectively. The filtered ion beam can slide through the first through holes on the first partition plate to the second partition plate and slide through the second through holes on the second partition plate to the containing space, so as to avoid the particles from being deposited on the first partition plate. Since the first through holes on the first partition plate and the second through holes on the second partition plate are staggered, the particles falling into the containing space are difficult to enter the flight area of the ion beam channel through the first through holes again, thereby greatly reducing the probability of the particles being carried into the wafer process chamber, and effectively avoiding the ion implantation process failure. Further, the particles can enter the flight area through the second through holes and the first through holes only when the particles accumulate between the bottom wall and the second partition plate. Therefore, the artificial maintenance period or the spare part replacement period is greatly prolonged, thereby effectively reducing the maintenance cost.

[0097] The above merely describes the embodiments of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation, or direct or indirect application in other related technical fields, which is made according to the content of the present application specification and drawings, is also included in the patent protection scope of the present application.

Claims

1. A magnetic analyzer comprising an ion beam channel, the ion beam channel comprising a flight region and a first inner wall and a top wall enclosing the flight region, characterized in that, The ion beam channel comprises a first partition plate, The first partition plate is arranged between the first inner wall and the flight area; the first inner wall comprises a bottom wall, and the first partition plate is arranged between the bottom wall and the flight area; The first partition plate is provided with a plurality of first through holes, and a containing space is formed between the first partition plate and the first inner wall; the containing space is located between the first partition plate and the bottom wall; The ion beam channel further comprises a second partition plate; the second partition plate is arranged between the first partition plate and the first inner wall, and the second partition plate is provided with a plurality of second through holes; at least part of the first through holes and the second through holes are arranged alternately; The first partition plate comprises a plurality of first protrusions arranged between adjacent two first through holes, the second partition plate comprises a plurality of second protrusions arranged between adjacent two second through holes, and the protruding directions of the first protrusions and the second protrusions are both towards the flight area.

2. The magnetic analyzer of claim 1, wherein, The first inner wall is provided with third through holes, and the third through holes are communicated with a vacuum exhaust device; The third through holes are uniformly distributed on the first inner wall.

3. The magnetic analyzer of claim 2, wherein, The first inner wall comprises a plurality of third protrusions arranged between adjacent two third through holes, and the protruding direction of the third protrusions is towards the flight area.

4. The magnetic analyzer of claim 1, wherein, The shapes of the first through holes and the second through holes comprise a circle or a rectangle; a plurality of first through holes are uniformly distributed on the first partition plate, and a plurality of second through holes are uniformly distributed on the second partition plate.

5. The magnetic analyzer of claim 4, wherein, The maximum width of the first through holes and the maximum width of the second through holes are both not less than 1 cm.

6. The magnetic analyzer of claim 1, wherein, The first partition plate and the second partition plate are sequentially and parallelly arranged on the inner side of the first inner wall.

7. The magnetic analyzer of claim 1, wherein, A plurality of conductive coils are attached to the outer wall of the ion beam channel, and the conductive coils are used to generate a preset magnetic field in a preset area in the flight area.

8. An ion implanter, comprising: The magnetic analyzer comprises an ion source, an ion implantation device, and a magnetic analyzer as claimed in any one of claims 1 to 7, the magnetic analyzer being used to screen and transmit ions generated by the ion source to the ion implantation device.

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