Exhaust device and exhaust method for substrate processing equipment

Abstract

The present invention relates to an exhaust device and an exhaust method for substrate processing equipment, and discloses a solution for setting a buffer space for storing chemical vapor outside the exhaust component of the substrate processing equipment and discharging the chemical vapor into the buffer space according to the processing process in the internal space of the chamber to adjust the processing process environment.

Description

Technical Field

[0001] The present invention relates to an exhaust device and an exhaust method for substrate processing equipment, and more particularly to a scheme in which a buffer space for storing chemical vapor is set outside an exhaust component of the substrate processing equipment and the chemical vapor is discharged into the buffer space according to a processing process in an internal space of a chamber to adjust the processing process environment. Background Art

[0002] In the semiconductor manufacturing process, when various chemical liquids are used in the process (e.g., cleaning, etching, etc.), chemical vapors are generated inside the substrate processing equipment due to the chemical liquids. Such chemical vapors and impurities contained in the vapors contaminate the semiconductor substrate, causing process accidents.

[0003] Therefore, the substrate processing equipment has an exhaust device for removing chemical vapor or impurities contained therein generated during the process. Such an exhaust device is connected to an exhaust pipe through the ground below the place where the substrate processing equipment is installed to remove the chemical vapor and impurities contained in the chemical vapor to the outside.

[0004] An exhaust member is provided at the end of the exhaust duct to exhaust the chemical vapor flowing into the exhaust duct through the operation of an exhaust fan. At this time, the chemical liquid used in the substrate treatment process generates different amounts of chemical vapor depending on the type or process type, so it is necessary to properly adjust the amount of chemical vapor discharged. For example, when sulfuric acid solution is used in the cleaning and etching process, since relatively more chemical vapor is generated, the exhaust volume needs to be increased accordingly.

[0005] However, when the chemical vapor generated in the substrate processing equipment is directly discharged to the outside, the pressure and temperature inside the chamber of the substrate processing equipment change with the discharge of the chemical vapor, resulting in a problem that the temperature and pressure required for the substrate processing process cannot be maintained. In particular, when the temperature and pressure inside the chamber cannot be adjusted to a constant level required for the substrate processing process, it becomes a problem that reduces the input-output ratio of the process.

[0006] (Patent Document 0001) Korean Patent Publication No. 10-1035983

[0007] (Patent Document 0002) Korean Patent Publication No. 10-0918382 Summary of the invention

[0008] The present invention is proposed to solve the above-mentioned problems of the prior art, and its object is to eliminate the problem that the environment required for the substrate processing process cannot be maintained due to the exhaust of chemical vapor generated in the substrate processing equipment.

[0009] In particular, it aims to eliminate the following problem: when chemical vapor is discharged through the exhaust duct of the substrate processing equipment, the pressure, temperature, etc. of the internal space of the chamber of the substrate processing equipment changes sharply due to the difference in pressure, temperature, etc. between the inside and outside of the substrate processing equipment.

[0010] Furthermore, the purpose is to eliminate the following problem: in a substrate processing device equipped with multiple chambers, when multiple chambers are operated simultaneously to perform process processing, environmental conditions such as pressure and temperature become different for each chamber, thereby failing to obtain the same quality level of input-output ratio.

[0011] The objects of the present invention are not limited to the foregoing, and another object and advantage of the present invention which are not mentioned can be understood through the following description.

[0012] It can be that one embodiment of the exhaust device of the substrate processing equipment according to the present invention includes: an exhaust component, which exhausts chemical vapor from the internal space of the chamber; a buffer component, which forms a closed buffer space on the outer side of the exhaust component and stores the chemical vapor exhausted from the exhaust component in order to adjust the processing environment in the internal space of the chamber; an exhaust component, which exhausts the chemical vapor held in the buffer space; and a control unit, which controls the exhaust component and the exhaust component to adjust the processing environment in the internal space of the chamber by adjusting the inflow and discharge of chemical vapor to the buffer space.

[0013] Preferably, the control unit may selectively control the exhaust component and the exhaust component to adjust the exhaust of chemical vapor by taking into account at least one of the internal temperature, pressure and estimated chemical vapor generation amount required by the substrate processing conditions to be performed in the chamber and at least one of the current internal temperature, pressure and chemical vapor concentration of the chamber internal space and the buffer space.

[0014] More preferably, the control unit may control the exhaust member and the exhaust member to form an exhaust airflow in the buffer space.

[0015] As an example, the buffer component may include: a partition wall, one side of which is tightly coupled to the periphery of the outer side surface of the exhaust component in a manner including the outer side surface of the exhaust component to form the buffer space; and a cover coupled to the other side of the partition wall to seal the buffer space.

[0016] Preferably, the exhaust member may include: an exhaust fan for exhausting the chemical vapor in the inner space of the chamber to the buffer space; and an exhaust regulator installed on the exhaust fan to adjust the exhaust volume of the exhaust fan.

[0017] Here, the exhaust air conditioner may include: a gate frame installed on the outside of the exhaust fan to form a plurality of through openings; and a gate that selectively opens or closes the through openings by rotating a predetermined angle corresponding to the through openings.

[0018] Furthermore, the exhaust component may also include: a flow meter for measuring the exhaust volume through the exhaust fan, and the control unit controls the exhaust fan and the exhaust regulator based on the measured volume of the flow meter, thereby adjusting the exhaust volume of the chemical vapor discharged from the internal space of the chamber to the buffer space.

[0019] As an example, the exhaust member may include: an exhaust pipe connected to the buffer space; and an exhaust pressure generator installed inside the exhaust pipe to adjust the exhaust amount through the exhaust pipe.

[0020] Preferably, the exhaust member may further include an exhaust pressure regulator installed in the exhaust pipe in front of the exhaust pressure generator to regulate the exhaust pressure of the exhaust pressure generator.

[0021] Here, the exhaust pressure regulator may include: a support bar, which is arranged at the middle end of the exhaust pipe in the diameter direction of the exhaust pipe; and a baffle, which is supported by the support bar and selectively opens or closes the exhaust pipe according to the rotation of the support bar.

[0022] Furthermore, the exhaust component may also include: a concentration meter installed at the inlet of the exhaust pipe to measure the concentration of chemical vapor in the buffer space; and a flow meter to measure the discharge amount through the exhaust pipe, and the control unit controls the exhaust pressure generator and the exhaust pressure regulator based on the measured amounts of the flow meter and the concentration meter, thereby adjusting the discharge amount of the chemical vapor stored in the buffer space.

[0023] As an example, the buffer component may further include: one or more partition frames connected to the partition wall frame in a manner of partitioning the buffer space corresponding to the exhaust member.

[0024] Preferably, the exhaust component includes: a branch exhaust pipe for discharging chemical vapor to each of the multiple divided buffer spaces; an exhaust pipe for discharging chemical vapor from the branch exhaust pipe; an exhaust pressure generator installed inside the branch exhaust pipe corresponding to each of the multiple divided buffer spaces and adjusting the exhaust amount through the branch exhaust pipe; and an exhaust pressure regulator installed inside the branch exhaust pipe in front of the exhaust pressure generator and adjusting the exhaust pressure of the exhaust pressure generator.

[0025] More preferably, the buffer member may include a plurality of buffer spaces partitioned by a multi-layer structure corresponding to a plurality of chambers provided in a multi-layer structure.

[0026] In addition, one embodiment of the exhaust method of the substrate processing equipment according to the present invention includes: a chamber chemical vapor exhaust step, which discharges the chemical vapor in the internal space of the chamber to the buffer space through the exhaust component; a chemical vapor storage step, which stores the chemical vapor exhausted from the internal space of the chamber in the buffer space; and a buffer chemical vapor exhaust step, which discharges the chemical vapor stored in the buffer space through the exhaust component.

[0027] As an example, the chamber chemical vapor exhaust step may include: a current state judgment step of judging the current state based on one or more elements of the current internal temperature, pressure and chemical vapor concentration of the chamber internal space and the buffer space; a requirement condition judgment step of judging the requirement condition of one or more elements of the internal temperature, pressure and estimated chemical vapor generation amount required by the substrate processing process conditions to be performed in the chamber; and a chamber chemical vapor exhaust adjustment step of adjusting the exhaust amount of the chemical vapor discharged from the chamber internal space to the buffer space based on the current state and the requirement condition.

[0028] Preferably, the current state judgment step may judge the current state by comparing one or more of the current internal temperature, pressure and chemical vapor concentration of the chamber internal space and the buffer space, and the chamber chemical vapor exhaust adjustment step predicts the change state of one or more of the internal temperature, pressure and chemical vapor concentration of the chamber internal space caused by the exhaust amount of chemical vapor in the chamber internal space based on the current state, and adjusts the exhaust amount of chemical vapor in the chamber internal space so that the change state meets the required condition.

[0029] More preferably, the chamber chemical vapor exhaust step to the buffer chemical vapor exhaust step may be repeatedly performed, and the chamber chemical vapor exhaust adjustment step gradually increases the chemical vapor exhaust amount and exhausts the chemical vapor so that the change state satisfies the required condition.

[0030] As an example, the buffer chemical vapor discharge step may include: a current state judgment step, judging the current state based on one or more of the current internal temperature, pressure and chemical vapor concentration of the chamber internal space and the buffer space; a buffer change state prediction step, predicting the change state of one or more of the internal temperature, pressure and chemical vapor concentration of the buffer space caused by the chemical vapor discharge amount in the buffer space based on the current state; and a buffer chemical vapor discharge adjustment step, adjusting the discharge amount of chemical vapor in the buffer space so that the change state satisfies the set reference range.

[0031] It can be that a preferred embodiment of the exhaust device of the substrate processing equipment according to the present invention includes: an exhaust component, including an exhaust fan for exhausting chemical vapor from the internal space of the chamber, a gate frame installed on the outside of the exhaust fan and formed with a plurality of through-holes, and a gate that selectively opens or closes the through-holes by rotating a predetermined angle corresponding to the through-holes; a buffer component, including a partition wall frame whose one side is tightly combined with the outer side surface of the exhaust component in a manner including the outer side surface of the exhaust component to form a buffer space, and a cover that is combined with the other side of the partition wall frame to seal the buffer space, and the chemical vapor exhausted from the exhaust component in order to adjust the processing environment in the internal space of the chamber is stored through the buffer space; the exhaust component includes a gate frame connected to the buffer An exhaust pipe for a space, a support bar arranged at the middle end of the exhaust pipe in the diameter direction of the exhaust pipe, a baffle supported by the support bar and selectively opening or closing the exhaust pipe according to the rotation of the support bar, and a concentration meter installed at the inlet of the exhaust pipe to measure the chemical vapor concentration in the buffer space and adjust the exhaust amount of the chemical vapor held in the buffer space; and a control unit, considering at least one of the internal temperature, pressure and estimated chemical vapor generation amount required by the substrate processing conditions to be performed in the chamber and at least one of the current internal temperature, pressure and chemical vapor amount of the chamber internal space and the buffer space, and selectively controlling the exhaust component and the exhaust component to adjust the exhaust of the chemical vapor.

[0032] According to the present invention, a buffer space for storing chemical vapor is provided outside the exhaust member of the substrate processing equipment, and the chemical vapor is exhausted according to the processing process in the chamber internal space, thereby adjusting the processing process environment.

[0033] In particular, after adjusting the exhaust rate of chemical vapor in the chamber interior space and temporarily storing it in the buffer space, the exhaust rate of chemical vapor in the buffer space is adjusted and then exhausted, so that the environmental change in the chamber interior space can be minimized, thereby stably maintaining the required conditions for the substrate processing process.

[0034] Furthermore, when multiple chambers are configured in a substrate processing equipment and substrate processing processes are performed simultaneously, the environmental conditions in the internal spaces of each chamber may become different as chemical vapors are discharged, but the environment in the internal space of the chamber can be maintained at a constant level through the buffer space, thereby maintaining the same level of quality in multiple chambers and mass-producing products.

[0035] The effects of the present invention are not limited to those mentioned above, and those having ordinary knowledge in the technical field to which the present invention pertains can clearly understand other effects not mentioned through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 An embodiment of a substrate processing apparatus to which the exhaust device according to the present invention is applied is shown.

[0037] Figure 2 A schematic structural diagram of an exhaust device according to the present invention is shown.

[0038] Figure 3 as well as Figure 4 An embodiment in which the exhaust device according to the present invention is installed in a substrate processing apparatus is shown.

[0039] Figure 5 An embodiment of an exhaust component in an exhaust device according to the present invention is shown.

[0040] Figure 6 An embodiment of an exhaust component in an exhaust device according to the present invention is shown.

[0041] Figure 7 An embodiment of the operation of the exhaust pressure regulator of the exhaust component in the exhaust device according to the present invention is shown.

[0042] Figure 8 An embodiment of a modification of the exhaust device according to the present invention is shown.

[0043] Fig. 9 A flow chart showing an embodiment of an exhaust method for a substrate processing apparatus according to the present invention.

[0044] Fig.10 A flow chart showing an embodiment of a process of exhausting chemical vapor from an internal space of a chamber in a method of exhausting a substrate processing apparatus according to the present invention.

[0045] Fig.11 A flow chart showing an embodiment of a process of exhausting chemical vapor from a buffer space in a method for exhausting a substrate processing apparatus according to the present invention.

[0046] (Explanation of Reference Numerals)

[0047] 1: Substrate processing equipment,

[0048] 100: substrate processing device,

[0049] 150, 251: Exhaust pipe,

[0050] 200: Exhaust,

[0051] 210: Exhaust fan,

[0052] 220, 220a, 220b, 220c: exhaust air regulator,

[0053] 221: Gate frame, 225: Gate,

[0054] 240: Buffer components,

[0055] 241: Dividing ledge, 243: Cover,

[0056] 245a, 245b, 245c: dividing frame,

[0057] 250, 250a, 250b, 250c, 250d: buffer space,

[0058] 251, 253: flow meter,

[0059] 255: concentration meter,

[0060] 260: Exhaust components,

[0061] 265: branch exhaust pipe,

[0062] 270: Exhaust pressure regulator,

[0063] 271, 271a, 271b: baffles, 273: support bars,

[0064] 280: Exhaust pressure generator. DETAILED DESCRIPTION

[0065] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to or restricted to the embodiments.

[0066] In order to illustrate the present invention and the advantages of the present invention and the objects achieved by the implementation of the present invention, preferred embodiments of the present invention are illustrated and described below with reference to them.

[0067] First, the terms used in this application are only used to illustrate specific embodiments and are not intended to limit the present invention. Singular expressions may include plural expressions as long as the context does not clearly indicate a difference. In addition, in this application, terms such as "including" or "having" are intended to specify the existence of features, numbers, steps, operations, constituent elements, components, or combinations thereof recorded in the specification, and should be understood as not excluding the existence or additional possibility of one or more other features or numbers, steps, operations, constituent elements, components, or combinations thereof in advance.

[0068] When describing the present invention, if it is determined that a detailed description of a related well-known structure or function may make the gist of the present invention unclear, the detailed description will be omitted.

[0069] The present invention proposes an exhaust device and an exhaust method applicable thereto, wherein a buffer space for storing chemical vapor is arranged outside an exhaust component of a substrate processing device and the chemical vapor is discharged into the buffer space according to a processing process in an internal space of a chamber, thereby being able to adjust the processing process environment.

[0070] Figure 1 An embodiment of a substrate processing apparatus to which the exhaust device according to the present invention is applied is shown.

[0071] Reference Figure 1 The substrate processing apparatus 1 to which the exhaust device according to the present invention is applied may include an indexing part 10, a buffering part 20, and a processing part 50. The indexing part 10, the buffering part 20, and the processing part 50 may be arranged in a row.

[0072] The indexing unit 10 may include four loading ports 12 and one indexing robot arm 13 .

[0073] Four loading ports 12 are arranged in front of the indexing unit 10. Alternatively, a plurality of loading ports 12 may be provided, and the number of loading ports 12 may be increased or decreased according to the process efficiency and space requirements of the substrate processing apparatus 1. Carriers (e.g., cassettes, FOUPs, etc.) for storing substrates W to be provided for the process and substrates W that have been processed are placed in the loading ports 12. A plurality of slots for storing substrates in a horizontal configuration relative to the ground are formed in the carrier 16.

[0074] The index robot 13 is disposed between the loading port 12 and the buffer 20 . The index robot 13 transfers the substrate W waiting on the upper layer of the buffer 20 to the carrier 16 , or transfers the substrate W waiting on the carrier 16 to the lower layer of the buffer 20 .

[0075] The buffer 20 is provided between the index unit 10 and the processing unit 50. The buffer 20 is a place where substrates W to be provided to a process before being transferred by the index robot 13 or substrates W that have been processed before being transferred by the main transfer robot 30 are temporarily stored and wait.

[0076] The main conveying robot 30 is disposed in the moving channel 40, and conveys substrates between each substrate processing apparatus 100 and the buffer 20. The main conveying robot 30 conveys substrates waiting in the buffer 20 and to be provided for a process to each substrate processing apparatus 100, or conveys substrates that have been processed in each substrate processing apparatus 100 to the buffer 20.

[0077] The moving channel 40 provides a channel for the main transport robot 30 to move. The substrate processing apparatuses 100 are arranged facing each other on both sides of the moving channel 40. A moving track is provided in the moving channel 40 for the main transport robot 30 to move and rise and fall to the upper and lower layers of the substrate processing apparatus 100 and the upper and lower layers of the buffer 20.

[0078] The substrate processing devices 100 are arranged opposite to each other on both sides of the moving channel 40 where the main conveying robot arm 30 is provided. The substrate processing equipment 1 includes a plurality of substrate processing devices 100 formed in upper and lower layers, but the number of substrate processing devices 100 may be increased or decreased according to the process efficiency and occupied space conditions of the substrate processing equipment 1. It may be that each substrate processing device 100 is constituted as an independent housing, and for this, a process for processing a substrate in an independent form is formed in each substrate processing device 100.

[0079] In the substrate processing apparatus 100, various substrate processing processes such as an etching process or a cleaning process are performed on the substrate. As an example, the substrate processing apparatus 100 may include a spin chuck in the chamber, and the substrate is placed on the spin chuck to rotate the substrate and supply a chemical solution, thereby performing an etching or cleaning process. As such a substrate processing process is performed, chemical vapor is generated in the internal space of the chamber, and the chemical vapor and impurities contained in the vapor are discharged through an exhaust pipe at the lower end of the chamber.

[0080] As chemical vapor is discharged from the substrate processing device 100, the environment in the internal space of the chamber changes. There is a large temperature and pressure difference between the internal space of the chamber and the external space from which the chemical vapor is discharged. Therefore, as the chemical vapor in the internal space of the chamber is discharged to the external space, the temperature and pressure of the internal space of the chamber change.

[0081] Such changes in temperature and pressure of the chamber interior space have a considerable impact on the substrate processing process conditions, causing a problem of reduced process input-output ratio. In particular, when multiple substrate processing apparatuses 100 simultaneously perform substrate processing processes, different temperatures and pressures are generated, resulting in differences in substrate processing results performed in each substrate processing apparatus 100. Such differences become a problem that the same quality of products cannot be maintained in mass production.

[0082] Therefore, the present invention proposes an exhaust device and an exhaust method for substrate processing equipment. In order to meet various required conditions such as temperature and pressure required for the substrate processing process in the internal space of the chamber, the chemical vapor in the internal space of the chamber is temporarily accommodated in a buffer space and then exhausted, thereby being able to maintain the environment of the internal space of the chamber within a constant level range.

[0083] Figure 2 A schematic structural diagram of an exhaust device according to the present invention is shown.

[0084] The exhaust apparatus 200 according to the present invention is connected to an exhaust pipe 150 that exhausts chemical vapor from the chamber inner space 110 of the substrate processing apparatus 100 .

[0085] The exhaust device 200 may include an exhaust member, a buffer component, an exhaust member, a control unit, and the like.

[0086] The exhaust member may include an exhaust fan 210 for exhausting the chemical vapor from the chamber internal space 110 through the exhaust pipe 150, and an exhaust regulator 220 installed at the exhaust fan 210 to adjust the exhaust amount of the chemical vapor of the exhaust fan 210. In addition, the exhaust member may include a flow meter 251 for measuring the exhaust amount of the chemical vapor discharged by the exhaust fan 210.

[0087] The buffer space 250 is formed by a buffer component installed on the outer side of the exhaust member. In order to adjust the process environment in the chamber inner space 110, the buffer space 250 sealed by the buffer component on the outer side of the exhaust member temporarily stores the chemical vapor exhausted from the exhaust member.

[0088] The exhaust member exhausts the chemical vapor held in the buffer space 250. To this end, the exhaust member may include an exhaust pipe 261 connected to the buffer space 250 and an exhaust pressure generator 280 that adjusts the exhaust amount through the exhaust pipe 261. In addition, the exhaust member may further include an exhaust pressure regulator 270 installed inside the exhaust pipe 261 in front of the exhaust pressure generator 280 to adjust the exhaust pressure of the exhaust pressure generator 280.

[0089] Furthermore, a concentration measuring device 255 for measuring the chemical vapor concentration in the buffer space 250 may be provided at the inlet portion of the exhaust pipe 261 , and a flow rate measuring device 253 for measuring the exhaust volume may be provided at the exhaust pipe 261 .

[0090] The control unit (not shown) adjusts the inflow and exhaust rates of the chemical vapor into and from the buffer space 250 by controlling the exhaust member and the exhaust member, thereby adjusting the processing environment in the chamber inner space 110 .

[0091] In particular, the control unit can selectively control the exhaust component and the exhaust component to adjust the exhaust of chemical vapor based on at least one of the internal temperature, pressure and estimated chemical vapor generation amount required by the substrate processing conditions to be performed in the chamber and at least one of the current internal temperature, pressure and chemical vapor concentration of the chamber internal space 110 and the buffer space 250.

[0092] The control part controls the exhaust member and the exhaust member, thereby forming an exhaust gas flow in the buffer space 250 to allow the chemical vapor to flow in or be exhausted more efficiently.

[0093] For example, the flow rate of the exhaust fan 210 may be measured by the flow meter 251 , and the control unit controls the exhaust fan 210 and the exhaust regulator 220 based on the measured amount, thereby adjusting the discharge rate of the chemical vapor discharged from the chamber internal space 110 to the buffer space 250 .

[0094] In addition, as an example, the concentration of chemical vapor may be measured by the concentration meter 255 in the buffer space 250, and the discharge amount through the exhaust pipe 261 may be measured by the flow meter 253. The control unit controls the exhaust fan and the exhaust air regulator based on the measured amount, thereby adjusting the discharge amount of the chemical vapor stored in the buffer space 250.

[0095] Thus, in the present invention, the chemical vapor exhaust rate of the internal space of the chamber is adjusted and temporarily stored in the buffer space, and then the chemical vapor exhaust rate of the buffer space is adjusted and discharged, so that the environmental change of the internal space of the chamber can be minimized, and thus the required conditions for the substrate processing process can be stably maintained.

[0096] Hereinafter, the exhaust device of the substrate processing apparatus according to the present invention will be observed through detailed embodiments of each component.

[0097] Figure 3 as well as Figure 4 An embodiment in which the exhaust device according to the present invention is installed in a substrate processing apparatus is shown.

[0098] The exhaust device according to the present invention can be installed without changing the existing substrate processing equipment while maintaining the already installed substrate processing equipment.

[0099] An exhaust fan and exhaust regulator 220a, 220b, 220c of an exhaust component are installed at the chemical vapor exhaust position on the substrate processing equipment 1, and a buffer component 240 is closely installed on the side of the substrate processing equipment 1 to include an exhaust fan and exhaust regulator 220a, 220b, 220c of an exhaust component.

[0100] The buffer member 240 includes a partition ledge 241 and a cover 243 .

[0101] One side of the partition ledge 241 is closely mounted on the side of the substrate processing device 1, and the joint is sealed to be airtight. In addition, the cover 243 can be mounted on the other side of the partition ledge 241, and a sealing member for airtightness is provided at the abutting portion between the cover 243 and the partition ledge 241.

[0102] The cover 243 is mounted on the partition ledge 241 so as to be rotatable with one side as a reference, and can have a door function for opening the buffer space 250 .

[0103] The buffer member 240 including the partition ledge 241 and the cover 243 is coupled to the side of the substrate processing apparatus 1 to form a buffer space 250 sealed inside the buffer member 240. In addition, the partition ledge 241 at the lower end of the buffer space 250 is provided with an exhaust member 260 for exhausting the chemical vapor stored in the buffer space 250.

[0104] Said Figure 3 as well as Figure 4 The embodiment is a case where, in the substrate processing apparatus 1 in which a plurality of chambers are provided in a multi-layer structure, the buffer member 240 is installed to form a buffer space 250 for receiving all chemical vapors exhausted from the plurality of chambers.

[0105] Figure 5 An embodiment of an exhaust component in an exhaust device according to the present invention is shown.

[0106] The exhaust member is installed on the substrate processing apparatus 1 at a location where chemical vapor is exhausted from the inner space of the chamber, and the exhaust member includes an exhaust fan 210 and an exhaust regulator 220 .

[0107] The exhaust air conditioner 220 may include a gate frame 221 and a gate 225 .

[0108] Alternatively, the gate frame 221 is installed outside the exhaust fan 210 and is formed with a plurality of through openings, and the gate 225 can rotate at a predetermined angle corresponding to the through openings of the gate frame 221 and selectively open or close the through openings.

[0109] As stated Figure 5 As in (a), the gate 225 can be adjusted to fully open the through-port, as described Figure 5 As in (b), the gate 225 can be adjusted to partially open the through-port, as described Figure 5 As shown in (c), the gate 225 can be adjusted to completely close the through-port.

[0110] The output of the exhaust fan 210 and the opening or closing of the shutter 225 are controlled by the control unit, thereby adjusting the exhaust amount of the chemical vapor exhausted from the internal space of the chamber to the buffer space.

[0111] Figure 6 An embodiment of an exhaust component in an exhaust device according to the present invention is shown.

[0112] The exhaust component may include an exhaust pipe 261 that passes through the partition wall 241 and is connected to the buffer space, an exhaust pressure generator 280 installed inside the exhaust pipe 261 to adjust the exhaust volume through the exhaust pipe 261, and an exhaust pressure regulator installed inside the exhaust pipe 261 in front of the exhaust pressure generator 280 to adjust the exhaust pressure of the exhaust pressure generator 280.

[0113] The exhaust pressure generator 280 may include a motor and blades rotated by the motor, and may include a structure for generating pressure to cause the fluid to flow by the rotation of the blades.

[0114] The exhaust pressure regulator can adjust the flow of the fluid in the exhaust pipe 261 by opening or closing the exhaust pipe 261, and refer to Figure 7 The exhaust pressure regulator is observed in one embodiment of the working conditions shown.

[0115] The exhaust pressure regulator may include a support bar 273 arranged at the middle end of the exhaust pipe 261 in the diameter direction of the exhaust pipe 261, a driver 275 that rotates the support bar 273, and baffles 271a, 271b that are supported by the support bar 273 and selectively open or close the exhaust pipe 261 according to the rotation of the support bar 273.

[0116] As stated Figure 7 As shown in one embodiment, the baffles 271a, 271b can be fastened to both sides of the support bar 273 corresponding to the cross-sectional shape of the exhaust pipe 261, and rotate around the support bar 273 as the support bar 273 rotates, thereby opening or closing the exhaust pipe 261.

[0117] Said Figure 6 as well as Figure 7The exhaust pressure regulator shown is one embodiment, and may be modified in various forms that are disposed in the exhaust pipe and are capable of regulating the amount of fluid flowing through the exhaust pipe.

[0118] The exhaust pressure generator 280 and the exhaust pressure regulator are controlled by the control unit, thereby adjusting the discharge amount of the chemical vapor stored in the buffer space.

[0119] Through the Figure 3 as well as Figure 4 The exhaust device observed in the embodiment forms an integrated buffer space 250 for accommodating all chemical vapors exhausted from the multiple chambers for a substrate processing equipment 1 having a multi-layer structure and having multiple chambers. However, as needed, the buffer space can also be divided to separately accommodate each chemical vapor exhausted from the multiple chambers.

[0120] Regarding this, Figure 8 Reference is made to an embodiment of a variant of the exhaust device according to the invention.

[0121] In the substrate processing apparatus 1 having a plurality of chambers in a multi-layer structure, a separate buffer space for temporarily storing chemical vapor may be provided for each layer.

[0122] To this end, partition frames 245a, 245b, and 245c are provided on the partition wall frame 241 to partition the buffer space in accordance with exhaust means for exhausting the chemical vapor of the chamber in each layer.

[0123] The buffer spaces 250a, 250b, and 250c are divided into layers by the partition frames 245a, 245b, and 245c. The chemical vapor stored in the buffer spaces 250a, 250b, and 250c in each layer can be discharged to the exhaust pipe 261 through the buffer space 250d at the bottom end of the exhaust pipe 261 connected to the exhaust member.

[0124] The buffer spaces 250a, 250b, and 250c divided into each layer are connected to a branch exhaust pipe 265 for exhausting chemical vapor, and the branch exhaust pipe 265 is connected to the buffer space 250d at the lowermost end.

[0125] The branch exhaust pipe 265 may be provided with an exhaust pressure generator (not shown) for adjusting the discharge volume through the branch exhaust pipe 265 corresponding to the buffer spaces 250a, 250b, 250c divided into each layer, and an exhaust pressure regulator (not shown) for adjusting the exhaust pressure of the exhaust pressure generator.

[0126] The exhaust pressure generator and the exhaust pressure regulator are similar to those of the previously described embodiment, and thus detailed descriptions thereof are omitted.

[0127] In this way, for substrate processing equipment having a multi-layer structure with multiple chambers, independent buffer spaces are set up corresponding to the chambers in each layer to adjust the exhaust of chemical vapor, so that the environment required by the substrate processing process for the internal space of each chamber can be adjusted in more detail.

[0128] In addition, the present invention proposes an exhaust method using the exhaust device of the substrate processing equipment according to the present invention observed above. Hereinafter, the exhaust method of the substrate processing equipment according to the present invention will be observed through its embodiments.

[0129] Fig. 9 A flow chart showing an embodiment of an exhaust method for a substrate processing apparatus according to the present invention.

[0130] According to the exhaust method of the substrate processing apparatus of the present invention, chemical vapor in the inner space of the chamber is exhausted to the buffer space by adjusting the exhaust amount in consideration of the environment of the inner space of the chamber through the exhaust member (S100).

[0131] The method may include storing the chemical vapor exhausted from the inner space of the chamber in the buffer space ( S200 ), and exhausting the chemical vapor stored in the buffer space by adjusting the exhaust amount through the exhaust member in consideration of the current state of the buffer space ( S300 ).

[0132] Each process of the exhaust method of the substrate processing apparatus according to the present invention is observed in more detail.

[0133] Fig.10 A flow chart showing an embodiment of a process of exhausting chemical vapor from an internal space of a chamber in a method of exhausting a substrate processing apparatus according to the present invention.

[0134] Various environmental factors such as the current internal temperature, pressure, and chemical vapor concentration of the chamber interior space and the buffer space are measured, and the current states of the chamber interior space and the buffer space are determined based on the measured environmental factors ( S110 ).

[0135] For example, the temperature, pressure, chemical vapor concentration, etc. of the chamber internal space and the buffer space are measured to understand the temperature difference, pressure difference, chemical vapor concentration difference, etc. between the chamber internal space and the buffer space.

[0136] Furthermore, the internal temperature, pressure, etc. required by the substrate processing process conditions to be performed in the chamber are grasped and the estimated amount of chemical vapor generated when the substrate is processed is predicted, and the required conditions based on the substrate processing process conditions to be performed in the chamber are determined (S130).

[0137] For example, the environmental factors such as the internal temperature and pressure required when executing the corresponding substrate processing process in the chamber and the environmental factors such as the estimated amount of chemical vapor generated thereby are understood, so as to judge the required conditions for executing the substrate processing process based on them.

[0138] Furthermore, based on the current states of the chamber interior space and the buffer space, the change states of environmental elements such as the internal temperature, pressure, and chemical vapor concentration of the chamber interior space caused by the discharge amount of chemical vapor in the chamber interior space are predicted (S140).

[0139] If the current states of the chamber interior space and the buffer space and the required conditions for performing the corresponding substrate processing process are known, the chemical vapor in the chamber interior space is discharged into the buffer space based on the current states and the required conditions ( S150 ).

[0140] Preferably, the chemical vapor exhausted from the chamber internal space may be exhausted into the buffer space while adjusting the exhaust rate of the chemical vapor exhausted from the chamber internal space so that the change state of the chamber internal space satisfies the required condition.

[0141] That is, when the chemical vapor in the chamber interior is discharged in large quantities to the outside with different temperature, pressure, etc., the temperature, pressure, etc. in the chamber interior may change. Therefore, in the present invention, by providing a buffer space, the environments of the chamber interior and the buffer space are kept similar and the chemical vapor in the chamber interior is regulated and discharged to the buffer space. Thus, the environmental conditions required for executing the corresponding substrate processing process can be properly maintained in the chamber interior.

[0142] The chemical vapor exhausted from the inner space of the chamber is temporarily stored in the buffer space (S200).

[0143] Thereafter, the chemical vapor stored in the buffer space is discharged to the outside in consideration of the current state of the buffer space.

[0144] Regarding the chemical vapor discharge process of the buffer space, Fig.11 A flow chart showing an embodiment of a process of exhausting chemical vapor from a buffer space in a method for exhausting a substrate processing apparatus according to the present invention.

[0145] Before exhausting the chemical vapor in the buffer space, various environmental factors such as current temperature, pressure, chemical vapor concentration, etc. of the chamber interior space and the buffer space are measured, and the current states of the chamber interior space and the buffer space are determined based on the measured environmental factors (S310).

[0146] Furthermore, based on the current states of the chamber internal space and the buffer space, the change states of environmental elements such as the internal temperature, pressure, and chemical vapor concentration of the buffer space caused by the discharge amount of chemical vapor in the buffer space are predicted (S330).

[0147] If the current states of the chamber internal space and the buffer space and the change state of the buffer space due to the discharge of the chemical vapor are known, the discharge amount is adjusted to discharge the chemical vapor so that the change state of the buffer space satisfies the set reference range ( S350 ).

[0148] Furthermore, the chemical vapor exhaust process in the chamber interior space and the chemical vapor exhaust process in the buffer space described above can be repeatedly performed, and the environmental state between the chamber interior space and the buffer space can be maintained at approximately a constant level and the exhaust volume can be gradually increased as the execution is repeated.

[0149] That is, when there is a large difference between the environmental state of the chamber internal space and the environmental state of the buffer space, by gradually increasing the amount of chemical vapor discharged from the chamber internal space to the buffer space, the difference in environmental state between the chamber internal space and the buffer space can be reduced and the chemical vapor can be discharged.

[0150] According to the present invention, the chemical vapor exhaust rate of the chamber interior space is adjusted and temporarily stored in the buffer space, and then the chemical vapor exhaust rate of the buffer space is adjusted and discharged, thereby minimizing the environmental changes in the chamber interior space, thereby stably maintaining the required conditions for the substrate processing process.

[0151] In particular, when multiple chambers are configured in a substrate processing equipment and substrate processing processes are performed simultaneously, the environmental conditions in the internal spaces of each chamber may become different as chemical vapors are discharged, but the environment in the internal space of the chamber can be maintained at a constant level through the buffer space, thereby maintaining the same level of quality in multiple chambers and mass-producing products.

[0152] The above description is merely an illustrative description of the technical concept of the present invention, and a person with common knowledge in the technical field to which the present invention belongs can make various modifications and deformations without departing from the essential features of the present invention. Therefore, the embodiments described in the present invention are not used to limit the technical concept of the present invention, but are used for explanation, and the technical concept of the present invention is not limited to such embodiments. The protection scope of the present invention should be interpreted by the attached claims, and should be interpreted as all technical concepts within the scope equivalent thereto are included in the scope of rights of the present invention.

Claims

1. An exhaust device for a substrate processing device, characterized in that: include: An exhaust component for exhausting chemical vapor from the interior space of the chamber; a buffer component, which forms a closed buffer space on the outer side of the exhaust member and stores the chemical vapor exhausted from the exhaust member in order to adjust the processing environment in the inner space of the chamber; an exhaust member for exhausting the chemical vapor held in the buffer space; as well as The control unit controls the exhaust member and the exhaust member to adjust the processing environment in the inner space of the chamber by adjusting the inflow and exhaust amount of the chemical vapor into and from the buffer space.

2. The exhaust device of the substrate processing equipment according to claim 1, characterized in that: The control unit selectively controls the exhaust component and the exhaust component to adjust the exhaust of chemical vapor by considering at least one of the internal temperature, pressure and estimated chemical vapor generation amount required by the substrate processing conditions to be performed in the chamber and at least one of the current internal temperature, pressure and chemical vapor concentration of the chamber internal space and the buffer space.

3. The exhaust device of the substrate processing equipment according to claim 2, characterized in that: The control unit controls the exhaust member and the exhaust member to form an exhaust airflow in the buffer space.

4. The exhaust device of the substrate processing equipment according to claim 1, characterized in that: The buffer component comprises: A partition wall frame, one side of which is closely coupled to the periphery of the outer side surface of the exhaust member in a manner including the outer side surface of the exhaust member to form the buffer space; and The cover is combined with the other side of the partition wall to seal the buffer space.

5. The exhaust device of the substrate processing equipment according to claim 1, characterized in that: The exhaust component comprises: an exhaust fan for exhausting the chemical vapor in the inner space of the chamber to the buffer space; and An exhaust regulator is installed on the exhaust fan to adjust the exhaust volume of the exhaust fan.

6. The exhaust device of the substrate processing equipment according to claim 5, characterized in that: The exhaust air conditioner comprises: A gate frame is installed outside the exhaust fan to form a plurality of through openings; and The gate selectively opens or closes the through-hole by rotating a predetermined angle corresponding to the through-hole.

7. The exhaust device of the substrate processing equipment according to claim 5, characterized in that: The exhaust component also includes: a flow meter for measuring the amount of discharge by the exhaust fan, The control unit controls the exhaust fan and the exhaust air regulator based on the amount measured by the flow meter, thereby adjusting the exhaust amount of the chemical vapor exhausted from the internal space of the chamber to the buffer space.

8. The exhaust device of the substrate processing equipment according to claim 1, characterized in that: The exhaust component comprises: an exhaust pipe connected to the buffer space; and The exhaust pressure generator is installed inside the exhaust pipe to adjust the exhaust amount through the exhaust pipe.

9. The exhaust device of the substrate processing equipment according to claim 8, characterized in that: The exhaust component also includes: An exhaust pressure regulator is installed in the exhaust pipe in front of the exhaust pressure generator to regulate the exhaust pressure of the exhaust pressure generator.

10. The exhaust device of substrate processing equipment according to claim 9, characterized in that: The exhaust pressure regulator comprises: a support bar, arranged at a middle end of the exhaust pipe in a diameter direction of the exhaust pipe; and The baffle is supported by the support bar and selectively opens or closes the exhaust pipe according to the rotation of the support bar.

11. The exhaust device of substrate processing equipment according to claim 9, characterized in that: The exhaust component also includes: a concentration measuring device installed at the inlet of the exhaust pipe to measure the chemical vapor concentration in the buffer space; and a flow meter for measuring the amount of discharge through the exhaust pipe, The control unit controls the exhaust pressure generator and the exhaust pressure regulator based on the amounts measured by the flow rate measuring device and the concentration measuring device, thereby adjusting the discharge amount of the chemical vapor stored in the buffer space.

12. The exhaust device of substrate processing equipment according to claim 4, characterized in that: The buffer component also includes: One or more partitioning frames are connected to the partition wall frame in a manner of partitioning the buffer space corresponding to the exhaust member.

13. The exhaust device of the substrate processing equipment according to claim 12, characterized in that: The exhaust component comprises: A branch exhaust pipe, used for exhausting chemical vapor from each of the divided multiple buffer spaces; an exhaust pipe, used for exhausting the chemical vapor from the branch exhaust pipe; an exhaust pressure generator installed inside the branch exhaust pipe corresponding to each of the divided plurality of buffer spaces and adjusting an exhaust amount through the branch exhaust pipe; and An exhaust pressure regulator is installed in the branch exhaust pipe in front of the exhaust pressure generator to regulate the exhaust pressure of the exhaust pressure generator.

14. The exhaust device of the substrate processing equipment according to claim 12, characterized in that: The buffer member has a plurality of buffer spaces divided in a multi-layer structure corresponding to a plurality of chambers arranged in a multi-layer structure.

15. A method for exhausting a substrate processing device, characterized in that: include: a chamber chemical vapor exhaust step, exhausting the chemical vapor in the chamber interior space to the buffer space through the exhaust component; A chemical vapor storage step of storing the chemical vapor exhausted from the inner space of the chamber in the buffer space; as well as a buffer chemical vapor exhaust step, wherein the chemical vapor stored in the buffer space is exhausted through an exhaust member, The chamber chemical vapor exhaust step comprises: a current state judging step, judging the current state based on one or more elements of the current internal temperature, pressure and chemical vapor concentration of the internal space of the chamber and the buffer space; a requirement condition determination step of determining a requirement condition of one or more elements of internal temperature, pressure, and estimated generation amount of chemical vapor required by a substrate processing process to be performed in the chamber; and The chamber chemical vapor exhaust adjustment step adjusts the exhaust amount of the chemical vapor exhausted from the chamber internal space to the buffer space based on the current state and the required condition.

16. The exhaust method of substrate processing equipment according to claim 15, characterized in that: The current state determination step determines the current state by comparing one or more elements of the current internal temperature, pressure and chemical vapor concentration of the chamber internal space and the buffer space. The chamber chemical vapor exhaust adjustment step predicts the change state of one or more elements of the internal temperature, pressure and chemical vapor concentration of the chamber internal space caused by the chemical vapor exhaust amount in the chamber internal space based on the current state, and adjusts the chemical vapor exhaust amount in the chamber internal space so that the change state meets the required condition.

17. The exhaust method of substrate processing equipment according to claim 16, characterized in that: Repeating the chamber chemical vapor exhaust step to the buffer chemical vapor exhaust step, The chamber chemical vapor exhaust adjustment step gradually increases the chemical vapor exhaust amount and exhausts the chemical vapor so that the change state satisfies the required condition.

18. A method for exhausting a substrate processing device, characterized in that: include: a chamber chemical vapor exhaust step, exhausting the chemical vapor in the chamber interior space to the buffer space through the exhaust component; A chemical vapor storage step of storing the chemical vapor exhausted from the inner space of the chamber in the buffer space; as well as a buffer chemical vapor exhaust step, wherein the chemical vapor stored in the buffer space is exhausted through an exhaust member, The buffer chemical vapor discharge step comprises: a current state judging step, judging the current state based on one or more elements of the current internal temperature, pressure and chemical vapor concentration of the internal space of the chamber and the buffer space; a buffer change state prediction step of predicting a change state of one or more elements of the internal temperature, pressure and chemical vapor concentration of the buffer space caused by the discharge amount of chemical vapor in the buffer space based on the current state; and The buffer chemical vapor discharge adjustment step adjusts the discharge amount of the chemical vapor in the buffer space so that the change state satisfies a set reference range.

19. An exhaust device for substrate processing equipment, characterized in that: include: An exhaust member includes an exhaust fan for exhausting chemical vapor from the inner space of the chamber, a gate frame installed outside the exhaust fan and formed with a plurality of through openings, and a gate that selectively opens or closes the through openings by rotating a predetermined angle corresponding to the through openings; The buffer member includes a partition wall frame having one side closely coupled to the outer side of the exhaust member in a manner including the outer side of the exhaust member to form a buffer space, and a cover coupled to the other side of the partition wall frame to seal the buffer space, and the chemical vapor exhausted from the exhaust member for adjusting the processing process environment in the internal space of the chamber is stored through the buffer space; an exhaust member, comprising an exhaust pipe connected to the buffer space, a support bar provided at a middle end of the exhaust pipe in a diameter direction of the exhaust pipe, a baffle supported by the support bar and selectively opening or closing the exhaust pipe according to the rotation of the support bar, and a concentration measuring device installed at an inlet portion of the exhaust pipe to measure the concentration of chemical vapor in the buffer space, and adjusting the exhaust amount of the chemical vapor held in the buffer space; and The control unit selectively controls the exhaust component and the exhaust component to adjust the exhaust of the chemical vapor, considering at least one of the internal temperature, pressure and estimated chemical vapor generation amount required by the substrate processing conditions to be performed in the chamber and at least one of the current internal temperature, pressure and chemical vapor amount of the chamber internal space and the buffer space.

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