An N-type double-sided battery structure

Abstract

The present invention belongs to the technical field of solar cells, and specifically relates to an N-type double-sided battery structure, which includes an N-type double-sided battery chip. On one side of the top of the N-type double-sided battery chip, multiple groups of positive electrodes are evenly arranged in an array. On the other side of the bottom of the N-type double-sided battery chip, multiple groups of partitions are evenly arranged in an array. Through holes are provided inside the partitions. On the other side of the bottom of the N-type double-sided battery chip, multiple groups of negative electrodes are evenly arranged in an array. The negative electrodes are matched with the through holes in the partitions, and the positive electrodes are matched with the negative electrodes. Four groups of splicing components are evenly arranged at the bottom of the partitions. A splicing groove is formed between the four groups of splicing components. The negative electrodes are located at the center of the splicing groove. The device has strong discharge adjustability of conductive glue, high matching accuracy of positive and negative electrodes during stacking, strong controllability of the injection amount of conductive glue, good adaptability and adjustability, especially timely supplement of the conductive glue in the splicing groove during use, high conductivity and light conversion rate.

Description

Technical Field

[0001] The present invention belongs to the technical field of solar cells, and specifically relates to an N-type double-sided battery structure. Background Art

[0002] The main advantages of N-type technology are as follows: 1) The minority carriers in P-type cell wafers are electrons, while the minority carriers in N-type cell wafers are holes. The capture of electrons by impurities in silicon wafers is much greater than that of holes. According to Pule Technology, in the case of the same metal impurity contamination, the surface recombination rate of N-type cell wafers is low, and the minority carrier lifetime is 1-2 orders of magnitude higher than that of P-type cell wafers, which can greatly improve the open-circuit voltage of the battery and the battery conversion efficiency is higher; 2) The doped element in N-type double-sided cell wafers is phosphorus element, and the boron content in crystalline silicon is extremely low, which essentially weakens the influence of boron-oxygen pairs, and the light-induced attenuation effect is close to zero; 3) The operating temperature of N-type cell wafers is low, the infrared transmittance is high, and there are many current channels. According to Moore Photovoltaic, the operating temperature of N-type cell wafers is 3-9 °C lower than that of conventional single-glass modules, reducing the power drop caused by the increase in temperature; 4) N-type cell wafers have good low-light response. According to Moore Photovoltaic, N-type double-sided cell wafers can still generate electricity on rainy days and in the morning and evening when the irradiation intensity is lower than 400 W / m2.

[0003] When the existing N-type double-sided battery structures are stacked to form a shingled module, the stacking accuracy is poor and the stacking efficiency is low. At the same time, when using conductive adhesive to conductively bond adjacent N-type double-sided battery structures, the volume of the conductive adhesive decreases after curing, especially it flows obliquely downward, which will cause the originally stacked N-type double-sided battery structures to tilt. Moreover, the cured conductive adhesive has a decreased conductive performance due to the change in structure. During long-term use, due to the continuous change of the external temperature difference and its own volatilization, the conductive adhesive will be lost. If it cannot be replenished in time, it will cause short circuits in the conductive circuit and other situations. Summary of the Invention

[0004] In view of the above problems, the present invention provides an N-type double-sided battery structure to solve the above-mentioned problems.

[0005] To achieve the above object, the present invention provides the following technical solution: An N-type double-sided battery structure includes an N-type double-sided cell wafer. On one side of the top of the N-type double-sided cell wafer, a plurality of positive electrodes are evenly arranged in an array. On the other side of the bottom of the N-type double-sided cell wafer, a plurality of partitions are evenly arranged in an array. A through hole is provided inside the partition. On the other side of the bottom of the N-type double-sided cell wafer, a plurality of negative electrodes are evenly arranged in an array. The negative electrode is matched with the through hole in the partition, and the positive electrode is matched with the negative electrode;

[0006] Four sets of splicing components are evenly arrayed at the bottom of the partition board. A splicing groove is formed between the four sets of splicing components. The negative electrode is located at the center of the splicing groove. The splicing component includes a rubber airbag. The top of the rubber airbag is fixedly connected to the bottom of the partition board. The openings of the four rubber airbags all face the negative electrode. An inner cavity is opened in the rubber airbag, and conductive glue is arranged in the inner cavity;

[0007] A fixing plate is arranged at the top of one end of the rubber airbag close to the negative electrode. The top of the fixing plate is fixedly connected to the bottom of the partition board. A glue outlet is opened in the fixing plate. A pressure valve is arranged in the glue outlet. A baffle is arranged at the bottom of the fixing plate and close to the negative electrode end. A hinge seat is arranged at the other end of the bottom of the fixing plate. A torsion spring is arranged in the hinge seat. The two sides of the torsion spring are rotationally connected with a rotating plate. An elastic connecting piece is arranged at the bottom of the rotating plate. A protection bottom plate is arranged at the bottom of the elastic connecting piece. The end of the protection bottom plate away from the negative electrode is fixedly connected to the inner wall of the rubber airbag;

[0008] The four rubber airbags are all interconnected through communication holes. Pressure sensor modules are arranged on the outer surfaces of the rotating plates close to the negative electrode;

[0009] When the N-type double-sided battery cells are stacked to form an overlapping structure, the conductive glue in the four inner cavities squeezes the elastic connecting piece. The outer end of the elastic connecting piece is in pressing contact with the positive electrode and corrects the position. When the pressure value detected by the pressure sensor module at the upper oblique end reaches the set pressure preset value, the smaller the pressure difference between the pressure sensor module at the upper oblique end and the pressure sensor module at the lower oblique end, the smaller the degree of pressing the N-type double-sided battery cell downward. The torsion spring drives the rotating plate to rotate towards the negative electrode end under the action of elastic force, and the position of the conductive glue cured in the splicing groove is continuously corrected.

[0010] Preferably, the N-type double-sided battery cell includes an N-type silicon substrate. An aluminum oxide passivation layer is arranged on the top of the N-type silicon substrate. A first silicon nitride antireflection layer is arranged on the top of the aluminum oxide passivation layer. A boron doping layer is arranged at the bottom of the positive electrode. The other end of the boron doping layer extends into the N-type silicon substrate. The top of the boron doping layer is in contact with the bottom of the aluminum oxide passivation layer.

[0011] Preferably, an ion-implanted phosphorus doping layer is arranged at the bottom of the N-type silicon substrate. A second silicon nitride antireflection layer is arranged at the bottom of the ion-implanted phosphorus doping layer. The top of the negative electrode passes through the second silicon nitride antireflection layer and is in contact with the inside of the ion-implanted phosphorus doping layer.

[0012] Preferably, a vertical block is provided on the top side of the protective bottom plate close to the negative electrode. The bottom of the elastic connecting piece is in contact with the side of the vertical block away from the negative electrode, and the end face of the vertical block away from the positive electrode and the end face of the rotating plate close to the negative electrode are located on the same vertical plane.

[0013] Preferably, the pressure valve is provided with a preset pressure value. After the conductive adhesive is cured, it has conductivity and adhesiveness, and the volume of the conductive adhesive decreases after curing.

[0014] Preferably, the splicing components are in mutual matching contact at the ends. The opening of the splicing groove faces downward, and the peripheral side surfaces of the splicing groove are all hermetically connected.

[0015] Preferably, the distances between the four groups of splicing components and the negative electrode are all equal. The aspect ratio of the length and width of the splicing groove is the same as that of the positive electrode, and the total content of the conductive adhesive in the four inner cavities is greater than the volume of the splicing groove.

[0016] Preferably, the end face of the elastic connecting piece close to the negative electrode is made of an elastic non-conductive material, and the bottom surface of the protective bottom plate is provided with a friction surface.

[0017] Preferably, the N-type double-sided battery cell is placed obliquely. The four groups of the splicing components are respectively an upper oblique group, a lower oblique group, a front group, and a rear group. The pressure value detected by the pressure sensor module at the end of the splicing component of the upper oblique group is less than the pressure value detected by the pressure sensor module at the end of the splicing component of the lower oblique group.

[0018] Preferably, a barrier elastic sheet is provided between the bottom of the baffle and the outer surface of the rotating plate. The barrier elastic sheet is not adhered to the conductive adhesive and is non-conductive.

[0019] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0020] 1. In this application, by setting the mutual cooperation of components such as the N-type double-sided battery cell, the N-type silicon substrate, the negative electrode, and the positive electrode, the N-type double-sided battery cell is made in a certain order. When multiple groups of N-type double-sided battery cells are connected in series, they are often stacked to form an overlapping shingle assembly. This can not only effectively improve the power generation efficiency and photoelectric conversion rate of the N-type double-sided battery structure, but also has high stability, a large lighting surface, a stable structure, and is easy to operate.

[0021] 2. In this application, by setting the mutual cooperation of components such as the splicing component, the rubber airbag, and the elastic connecting piece, when multiple groups of N-type double-sided battery cells are stacked, the subsequent N-type double-sided battery cell squeezes the rubber airbag. The conductive adhesive inside the rubber airbag drives the elastic connecting piece to expand outward and squeeze the positive electrode, so that the positive electrode and the negative electrode in the splicing groove face and match each other, further improving the splicing accuracy and stability.

[0022] 3. By setting the cooperation of components such as the rotating plate, torsion spring, and pressure sensor module, when conductive adhesive is injected into the splicing groove, the conductive adhesive drives the rotating plate to rotate away from the negative electrode end and squeezes the torsion spring. When the injection is completed, when the pressure value detected by the pressure sensor module at the upper inclined end reaches the set pressure preset value, and the pressure difference between the pressure sensor module at the upper inclined end and the pressure sensor module at the lower inclined end gradually decreases, the pressure for pressing down the N-type double-sided battery chip gradually decreases. This device effectively solves the parallelism and stability problems during the stacking of multiple groups of N-type double-sided battery chips. The conductive adhesive has strong discharge adjustability, high matching accuracy of the positive and negative electrodes during stacking, strong controllability of the injection volume of the conductive adhesive, good adaptability and adjustability. Especially during use, the conductive adhesive in the splicing groove can be replenished in a timely manner, with high conductivity and light conversion rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a schematic structural diagram of the N-type double-sided battery chip in the present invention;

[0024] Figure 2 is a front cross-sectional view of the N-type double-sided battery chip when shingling starts in the present invention;

[0025] Figure 3 is a top view of the N-type double-sided battery chip when shingling starts in the present invention;

[0026] Figure 4 is Figure 2 an enlarged view of part A in

[0027] Figure 5 is Figure 2 an enlarged view of part B in

[0028] Figure 6 is Figure 2 an enlarged view of part C in

[0029] Figure 7 is a front cross-sectional view of the N-type double-sided battery chip after shingling is completed in the present invention;

[0030] Figure 8 is a top view of the N-type double-sided battery chip after shingling is completed in the present invention;

[0031] Figure 9 is Figure 7 an enlarged view of part D in

[0032] Figure 10 is Figure 7 an enlarged view of part E in

[0033] Reference numerals: 1. N-type double-sided cell; 2. N-type silicon substrate; 3. aluminum oxide passivation layer; 4. first silicon nitride antireflection layer; 5. boron-doped layer; 6. positive electrode; 7. ion-implanted phosphorus-doped layer; 8. second silicon nitride antireflection layer; 9. negative electrode; 10. partition; 11. splicing component; 12. rubber airbag; 13. inner cavity; 14. communication hole; 15. protective bottom plate; 16. fixing plate; 17. glue outlet; 18. pressure valve; 19. baffle; 20. hinge seat; 21. torsion spring; 22. rotating plate; 23. elastic connecting piece; 24. vertical block; 25. splicing groove. Detailed implementation manners

[0034] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0035] First embodiment

[0036] As Figure 1 shown, an N-type double-sided battery structure includes an N-type double-sided cell 1, and the N-type double-sided cell 1 is an N-type TOPCon-PERT double-sided solar cell, which can be used as the core power generation component of a solar panel in the later stage to improve the power generation efficiency and light energy conversion rate of the solar panel.

[0037] On one side of the top of the N-type double-sided cell 1, a plurality of groups of positive electrodes 6 are evenly arranged in an array to transmit positive electricity through the positive electrodes 6. On the other side of the bottom of the N-type double-sided cell 1, a plurality of groups of negative electrodes 9 are evenly arranged in an array to transmit negative electricity through the negative electrodes 9. The positive electrodes 6 and the negative electrodes 9 are matched. Thus, when the positive electrodes 6 and the negative electrodes 9 are connected in series, multiple groups of N-type double-sided cells 1 can be electrically connected, further improving the power generation efficiency and light energy conversion rate of the subsequent solar panel. At the same time, the commonly used method of connecting the N-type double-sided cells 1 in series is to stack them to form a shingled component.

[0038] The N-type double-sided cell 1 includes an N-type silicon substrate 2. The N-type silicon substrate 2 is the main power generation material. An aluminum oxide passivation layer 3 is provided on the top of the N-type silicon substrate 2. The aluminum oxide passivation layer 3 improves the light energy conversion efficiency of the N-type double-sided cell 1. A first silicon nitride antireflection layer 4 is provided on the top of the aluminum oxide passivation layer 3. The first silicon nitride antireflection layer 4 protects the internal N-type silicon substrate 2. A boron-doped layer 5 is provided at the bottom of the positive electrode 6. The other end of the boron-doped layer 5 extends into the N-type silicon substrate 2. The top of the boron-doped layer 5 is in contact with the bottom of the aluminum oxide passivation layer 3. The boron-doped layer 5 further improves the current transmission stability and transmission efficiency of the positive electrode 6, with high power generation efficiency and high light energy conversion rate.

[0039] An ion-implanted phosphorus doping layer 7 is provided at the bottom of the N-type silicon substrate 2. The ion-implanted phosphorus doping layer 7 improves the high efficiency and stability of the double-sided power generation of the N-type double-sided cell 1. A second silicon nitride antireflection layer 8 is provided at the bottom of the ion-implanted phosphorus doping layer 7. Similarly, the second silicon nitride antireflection layer 8 can serve as the main protective layer and converter. The top of the negative electrode 9 passes through the second silicon nitride antireflection layer 8 and is in contact with the inside of the ion-implanted phosphorus doping layer 7, and the negative electrode 9 conducts the transmission of negative electricity.

[0040] During use, in the above order, an aluminum oxide passivation layer 3 and a first silicon nitride antireflection layer 4 are sequentially provided on the top of the N-type silicon substrate 2 from bottom to top. A boron doping layer 5 is provided inside the N-type silicon substrate 2. A positive electrode 6 is provided on the other side of the boron doping layer 5, and the positive electrode 6 sequentially passes through the aluminum oxide passivation layer 3 and the first silicon nitride antireflection layer 4 and extends out of the top of the N-type double-sided cell 1.

[0041] At the same time, an ion-implanted phosphorus doping layer 7 and a second silicon nitride antireflection layer 8 are sequentially provided on the bottom of the N-type silicon substrate 2 from top to bottom. At the same time, a negative electrode 9 is provided at the bottom of the ion-implanted phosphorus doping layer 7, and the other end of the negative electrode 9 passes through the second silicon nitride antireflection layer 8 and extends out of the bottom of the N-type double-sided cell 1.

[0042] Among them, the resistivity of the N-type silicon substrate 2 is between 0.3 Ω·cm and 10 Ω·cm. The thickness of the aluminum oxide passivation layer 3 is 5-20 nm and it has a fixed negative charge of 5×10² cm⁻² - 3×10³ cm⁻². The thickness of the first silicon nitride antireflection layer 4 is 65-75 nm, and the thickness of the second silicon nitride antireflection layer 8 is 73-86 nm.

[0043] When multiple groups of N-type double-sided cells 1 are connected in series, they are often stacked to form a shingled module. This can not only effectively improve the power generation efficiency and photoelectric conversion rate of this N-type double-sided cell structure, but also has high stability, a large lighting surface, a stable structure and is easy to operate.

[0044] Second Embodiment

[0045] As Figures 2 - 10As shown in the figure, when multiple groups of N-type double-sided solar cells 1 are stacked to form an overlapping tile assembly, due to the low adjustment accuracy of the tilt angle of the N-type double-sided solar cells 1, the parallelism of adjacent N-type double-sided solar cells 1 is poor, and the light collection accuracy of the overlapping tile assembly is low. At the same time, when the subsequent N-type double-sided solar cells 1 are stacked, conductive adhesive is used to fixedly connect the positive electrode 6 and the negative electrode 9. However, after the conductive adhesive is cured, its volume shrinks, and the inclined N-type double-sided solar cells 1 will cause the conductive adhesive to move obliquely downward under the action of gravity, resulting in the volume shrinkage of the conductive adhesive after curing and an irregular shrinkage shape, reducing the conductivity of the conductive adhesive to the positive electrode 6 and the negative electrode 9. At the same time, when the solar panel formed by multiple groups of N-type double-sided solar cells 1 is used for a long time, due to the continuous changes in light and environmental temperature, the conductive adhesive will partially volatilize. If the conductive adhesive cannot be replenished in time, it will also affect the conductive effect of the overlapping tile assembly, and even cause a short circuit of the solar panel. To solve the above problems and improve the conductivity and stability of the device, the N-type double-sided battery structure further includes: a plurality of groups of partitions 10 are evenly arranged in an array on the other side of the bottom of the N-type double-sided solar cell 1. Through holes are provided inside the partitions 10, and the negative electrode 9 is matched with the through holes inside the partitions 10. With the help of the partitions 10, the bottom of the N-type double-sided solar cell 1 can be isolated and protected, avoiding damage to the bottom of the N-type double-sided solar cell 1 during actual assembly, and improving the performance and stability of the N-type double-sided solar cell 1 for double-sided power generation.

[0046] Four groups of splicing components 11 are evenly arranged in an array at the bottom of the partition 10. The splicing components 11 complete the stacking work of the positive electrode 6 and the negative electrode 9. At the same time, the splicing components 11 can also provide comprehensive protection for the internal positive electrode 6 and negative electrode 9 and compensate for the conductive adhesive, further improving the stability and conductivity of the stacked N-type double-sided solar cells 1.

[0047] A splicing groove 25 is formed between the four groups of splicing components 11. The negative electrode 9 is located at the center of the splicing groove 25. The positive electrode 6 at the top of the subsequent N-type double-sided solar cells 1 is synchronously inserted into the corresponding splicing groove 25 for stacking. The splicing components 11 are in contact with each other at the end. The opening of the splicing groove 25 faces downward, and the circumferential side surface of the splicing groove 25 is hermetically connected. The distribution of the splicing components 11 can further improve the protection and sealed wrapping of the positive electrode 6 and the negative electrode 9 in the splicing groove 25.

[0048] The distances between the four groups of splicing components 11 and the negative electrode 9 are all equal, and the aspect ratio of the splicing groove 25 is the same as the aspect ratio of the positive electrode 6. Therefore, when stacking, with the help of the shape and size of the splicing components 11 and the relationship between the aspect ratio of the splicing groove 25 and the positive electrode 6, the docking accuracy of the positive electrode 6 and the negative electrode 9 can be further improved, ensuring that the positive electrode 6 and the negative electrode 9 are facing each other and in contact for conduction during the stacking process.

[0049] The splicing component 11 includes a rubber airbag 12. The top of the rubber airbag 12 is fixedly connected to the bottom of the partition plate 10. The rubber airbag 12 has certain supporting performance and can deform when being squeezed. In particular, when the rubber airbag 12 is squeezed in the up and down direction, the main direction of its deformation is the up and down direction. Its peripheral side has certain supportability, so it will not expand towards the peripheral side when being squeezed in the up and down direction. The openings of the rubber airbag 12 all face the negative electrode 9. An inner cavity 13 is formed inside the rubber airbag 12, and conductive glue is provided in the inner cavity 13. The inner wall of the rubber airbag 12 is provided with a low-temperature environment convenient for storing the conductive glue. Therefore, the conductive glue stored in the inner cavity 13 is in a stable colloidal structure, which is convenient for directly discharging later to compensate the conductive glue in the splicing groove 25. At the same time, with the help of the rubber airbag 12 and the internal conductive glue, an all-round sealed environment is formed as much as possible for the conductive glue that has been discharged in the splicing groove 25, further reducing the volatility and deformation angle of the conductive glue in the splicing groove 25. After the conductive glue is cured, it has conductivity and adhesiveness. After the conductive glue is cured, its volume decreases. Therefore, after the conductive glue is cured in the splicing groove 25, it will adhere to the positive electrode 6 and the negative electrode 9, and the cured conductive glue has certain conductivity. However, the volume of the conductive glue will decrease after curing, and the conductive glue is in a colloidal structure when discharged. Therefore, the conductive glue has certain fluidity and flows obliquely downwards.

[0050] If the total content of the conductive glue in the four groups of inner cavities 13 is greater than the volume of the splicing groove 25, after the conductive glue is discharged from the inner cavity 13 into the splicing groove 25, there is still some conductive glue remaining in the inner cavity 13, which is convenient for timely replenishment of the conductive glue after volatilization during subsequent use, improving the stability and sufficiency of the conductive glue in the splicing groove 25, and reducing the conductivity and adhesiveness of the conductive glue to the positive electrode 6 and the negative electrode 9 due to the loss or deformation of the conductive glue.

[0051] At the top of one end of the rubber airbag 12 close to the negative electrode 9, there is a fixing plate 16. The fixing plate 16 mainly plays a connecting role. The top of the fixing plate 16 is fixedly connected to the bottom of the partition plate 10. An adhesive outlet 17 is formed inside the fixing plate 16, and a pressure valve 18 is provided inside the adhesive outlet 17. The pressure valve 18 is provided with a preset pressure value. When the pressure value received by the pressure valve 18 is greater than the set pressure preset value, the conductive glue in the inner cavity 13 can be discharged along the adhesive outlet 17. At the bottom of the fixing plate 16 and at one end close to the negative electrode 9, there is a baffle 19. At the other end of the bottom of the fixing plate 16, there is a hinge seat 20. A torsion spring 21 is provided inside the hinge seat 20. The two sides of the torsion spring 21 are rotatably connected to a rotating plate 22. The rotating plate 22 can rotate along the bottom of the hinge seat 20 under the pressure of the conductive glue in the splicing groove 25. At the same time, when the rotating plate 22 rotates, it will stretch the torsion spring 21. Therefore, when the extrusion force on one side of the rotating plate 22 decreases, the torsion spring 21 will drive the rotating plate 22 to rotate in the reverse direction and return to its original position under the elastic force of the torsion spring 21.

[0052] An elastic connecting piece 23 is provided at the bottom of the rotating plate 22. A protective bottom plate 15 is provided at the bottom of the elastic connecting piece 23. The end face of the elastic connecting piece 23 close to the negative electrode 9 is made of an elastic non-conductive material. Therefore, when the elastic connecting piece 23 contacts the negative electrode 9, it will not affect the normal conduction between the positive electrode 6 and the negative electrode 9. The end of the protective bottom plate 15 away from the negative electrode 9 is fixedly connected to the inner wall of the rubber airbag 12. A friction surface is provided on the bottom surface of the protective bottom plate 15. The protective bottom plate 15 can contact the bottom of the subsequent N-type double-sided battery cell 1 to reduce its sliding property. When the extrusion degree of the rubber airbag 12 is small, that is, when the pressure value received by the pressure valve 18 is less than the set preset value, the pressure valve 18 is not opened. At this time, when the rubber airbag 12 is extruded, it will extrude the elastic connecting piece 23 outwards. Under the extrusion of the internal conductive adhesive, the elastic connecting piece 23 continuously extends outwards. With the extension of the four groups of elastic connecting pieces 23, the position of the positive electrode 6 at the bottom can be corrected, so that the front face of the positive electrode 6 faces the bottom of the negative electrode 9, and thus the stacking accuracy is higher and the photoelectric conversion effect is better.

[0053] A barrier elastic piece is provided between the bottom of the baffle 19 and the outer surface of the rotating plate 22. The barrier elastic piece is not adhered to the conductive adhesive and is non-conductive. With the help of the barrier elastic piece, the space between the baffle 19 and the rotating plate 22 is blocked, preventing the conductive adhesive in the splicing groove 25 from entering and affecting the normal rotation of the rotating plate 22.

[0054] A vertical block 24 is provided on the top side of the protective bottom plate 15 close to the negative electrode 9. The bottom of the elastic connecting piece 23 contacts the side of the vertical block 24 away from the negative electrode 9. The end face of the vertical block 24 away from the positive electrode 6 matches the end face of the rotating plate 22 close to the negative electrode 9. The vertical block 24 can limit the bottom of the rotating plate 22 when the rotating plate 22 rotates, preventing the rotating plate 22 from rotating towards the negative electrode 9 end when it rotates, thereby affecting the content of the conductive adhesive in the splicing groove 25 and ultimately reducing the actual discharge amount of the conductive adhesive.

[0055] The four groups of rubber airbags 12 are all interconnected through communication holes 14. By means of the communication holes 14, the four groups of rubber airbags 12 are interconnected to ensure that the conductive adhesives in the four inner cavities 13 are interconnected, improving the homogeneity of the conductive adhesive content in each rubber airbag 12. Pressure sensor modules are provided on the outer surface of the rotating plate 22 close to the negative electrode 9. The pressure sensor modules are wireless transmission modules that transmit pressure values only by wireless signals. At the same time, the pressure values detected by each pressure sensor module are the pressure values of the conductive adhesive in the splicing groove 25 on the rotating plate 22. In particular, the pressure values detected by each pressure sensor module are different. Therefore, according to the pressure values detected by the pressure sensor modules at different positions, the stacking process can be adjusted in cooperation with the external splicing component 11, further improving the accuracy and stability during stacking.

[0056] In use, an N-type double-sided cell 1 is made in the manner of the first embodiment, and multiple groups of N-type double-sided cells 1 are stacked to form an overlapping shingle assembly. The bottom of the front N-type double-sided cell 1 is temporarily supported and protected by a rubber airbag 12, so that the front N-type double-sided cell 1 is placed obliquely, further improving the stability and accuracy of subsequent stacking.

[0057] After that, the subsequent N-type double-sided cells 1 are stacked to form an overlapping shingle assembly. At the same time, multiple groups of positive electrodes 6 on the top of the front N-type double-sided cell 1 are inserted into the splicing grooves 25 formed by four groups of splicing assemblies 11 spliced later. Due to the self-gravity of the subsequent N-type double-sided cells 1, they will move downward relative to the front N-type double-sided cell 1. The multiple groups of positive electrodes 6 are all in contact with the inner wall of the rotating plate 22 at the upper oblique end of the four groups of splicing assemblies 11, which may cause the situation where the positive electrode 6 and the negative electrode 9 do not correspond to each other.

[0058] After that, the subsequent N-type double-sided cells 1 are pressed obliquely downward. Under the action of the pressure, the rubber airbag 12 is continuously squeezed and contracted in the up and down directions. At the same time, since the pressure value in the inner cavity 13 does not reach the pressure preset value set by the pressure valve 18 and the pressure valve 18 is not opened, the conductive adhesive in the inner cavity 13 is squeezed against the elastic connecting piece 23 at the bottom of the inner cavity 13 under the pressing action. The outer end of the elastic connecting piece 23 continuously expands towards the positive electrode 6 under the squeezing force of the conductive adhesive in the inner cavity 13. Under the squeezing action of the four groups of elastic connecting pieces 23, the positive electrode 6 at the bottom is continuously moved to the center position of the splicing groove 25. In particular, since the front N-type double-sided cell 1 is in a stable state, when the elastic connecting piece 23 squeezes the positive electrode 6, the positive electrode 6 will not move downward, but drives the subsequent N-type double-sided cell 1 to move obliquely upward under the action of the reaction force, finally realizing the matching and positive facing of the positive electrode 6 and the negative electrode 9 in the splicing groove 25, and improving the stability and conductivity efficiency of subsequent conductive adhesive adhesion and conduction.

[0059] When the position correction of the positive electrode 6 by the elastic connecting piece 23 is completed, the elastic connecting piece 23 expands outwards to the maximum value. Therefore, when squeezing the subsequent N-type double-sided cell 1, the rubber airbag 12 continues to be squeezed in the up and down directions. At this time, since the inner cavity 13 of the rubber airbag 12 cannot continue to increase, the pressure in the inner cavity 13 continuously increases. When the pressure in the inner cavity 13 is greater than the pressure preset value set by the pressure valve 18, the pressure valve 18 opens, and the conductive adhesive in the inner cavity 13 is continuously discharged into the splicing groove 25 along the glue outlet 17. With the fluidity and squeezability of the colloidal structure of the conductive adhesive, the conductive adhesive can quickly flow to any position of the splicing groove 25. At the same time, under the elastic force of the elastic connecting piece 23, it continuously moves away from the positive electrode 6 end and returns to its original position. Therefore, the elastic connecting piece 23 returns to its original position and is located between the rotating plate 22 and the protection bottom plate 15.

[0060] When the content of the conductive adhesive in the splicing groove 25 continuously increases, since the N-type double-sided solar cell 1 is in an inclined state during stacking, the conductive adhesive will squeeze the rotating plate 22 at the lower end obliquely downward by virtue of its fluidity. Therefore, the pressure value detected by the pressure sensing module at the outer end of the rotating plate 22 continuously increases. However, since the pressure sensor module at the outer end of the rotating plate 22 at the upper end is not in contact with the conductive adhesive, the pressure value detected by this pressure sensor module is zero.

[0061] When the N-type double-sided solar cell 1 is continuously squeezed and the rubber airbag 12 is squeezed, the conductive adhesive inside the inner cavity 13 continuously discharges along the glue outlet 17, and the content of the conductive adhesive in the splicing groove 25 continuously increases. Since the volume of the conductive adhesive decreases after curing, when actually injecting the conductive adhesive into the splicing groove 25, it is necessary to discharge as much as possible to ensure that the splicing groove 25 is still filled with the conductive adhesive after curing.

[0062] Therefore, when the content of the conductive adhesive in the splicing groove 25 continuously increases, under the extrusion force of the conductive adhesive, the rotating plate 22 will be squeezed to rotate away from the negative electrode 9 end. When the rotating plate 22 rotates, it will stretch the torsion spring 21 to rotate. In particular, according to the inclined placement direction of the N-type double-sided solar cell 1, the four groups of the splicing assembly 11 are the upper inclined group, the lower inclined group, the front group, and the rear group. Due to the fluidity and gravity of the conductive adhesive, the pressure value detected by the pressure sensor module at the end of the splicing assembly 11 in the upper inclined group is less than that of the splicing assembly 11 in the lower inclined group. Therefore, when the pressure value detected by the pressure sensor module at the end of the splicing assembly 11 in the upper inclined group reaches the set preset pressure value, it indicates that the content of the conductive adhesive in the splicing groove 25 has met the required value. In particular, at this time, the pressure value detected by the pressure sensor module at the end of the splicing assembly 11 in the lower inclined group is greater, so the rotating plate 22 drives the torsion spring 21 to rotate at a larger angle, and the compression elastic force received by the torsion spring 21 is greater.

[0063] After that, stop squeezing the N-type double-sided solar cell 1 downward and continue the subsequent stacking. During the curing process of the conductive adhesive, the volume of the conductive adhesive continuously shrinks. Then, under the elastic force of the torsion spring 21, the rotating plate 22 is driven to rotate towards the negative electrode 9 end. At the same time, since the rotation angle of the torsion spring 21 in the lower oblique direction is greater than that of the torsion spring 21 in the upper oblique direction, the reverse elastic force of the torsion spring 21 in the lower oblique direction is greater, and the upward oblique supporting force of the rotating plate 22 in the lower oblique direction on the conductive adhesive in the splicing groove 25 is greater. This effectively ensures that the conductive adhesive remains in the middle position of the splicing groove 25 during curing, and effectively avoids continuously squeezing the splicing assembly 11 in the lower oblique direction under the action of the fluidity of the conductive adhesive, resulting in irregular shape and size of the conductive adhesive in the splicing groove 25, thereby reducing the conductivity and adhesiveness of the conductive adhesive.

[0064] When the turning plate 22 at the lower inclined end continuously rotates towards the negative electrode 9 end, the volume of the corresponding inner cavity 13 continuously increases. Therefore, the supporting force of the conductive adhesive in the inner cavity 13 on the top N-type double-sided battery cell 1 decreases. Since the volume of the inner cavity 13 increases and the pressure decreases, under the action of the gravity and fluidity of the conductive adhesive in the inner cavities 13 of multiple splicing components 11, the conductive adhesive in other inner cavities 13 will continuously flow downward along the communication holes 14 into the inner cavity 13 at the lower inclined end and fill the inner cavity 13, thus avoiding the decrease in the supporting force of the conductive adhesive in multiple inner cavities 13 on the top N-type double-sided battery cell 1. At this time, only need to continue to squeeze the subsequent N-type double-sided battery cell 1 downward to compensate for the change in the space in the inner cavity 13, so as to ensure the support and protection of the rubber airbag 12 and the internal conductive adhesive for the subsequent N-type double-sided battery cell 1.

[0065] Especially note that in order to ensure the pressing degree of the subsequent N-type double-sided battery cell 1 and avoid damage to its structure caused by excessive pressing of the N-type double-sided battery cell 1, when the pressure value detected by the pressure sensor module at the upper inclined end reaches the set pressure preset value and the pressure difference detected by the pressure sensor module at the lower inclined end and the pressure sensor module at the upper inclined end continuously decreases, continuously squeeze the subsequent N-type double-sided battery cell 1 downward. Therefore, under the action of the squeezing force and the pressure in the inner cavity 13 caused by the reverse rotation of the turning plate 22, the conductive adhesive in multiple inner cavities 13 flows through the communication holes 14 for communication, further improving the stability of the conductive adhesive content in multiple inner cavities 13 and the support for the subsequent N-type double-sided battery cell 1.

[0066] When the turning plate 22 rotates back to the original angle under the elastic force of the torsion spring 21 and the turning plate 22 cannot continue to rotate towards the negative electrode 9 end under the joint block of the baffle 19 and the vertical block 24, the splicing groove 25 forms a sealed structure with a fixed size at this time, and the conductive adhesive in the splicing groove 25 is cured in the middle position of the splicing groove 25 under the cooperation of the torsion spring 21 and the turning plate 22. The positive electrode 6 and the negative electrode 9 are located in the middle of the splicing groove 25 and face each other directly. After curing, the conductive adhesive has good adhesiveness and conductivity, further improving the conductivity and stability of the negative electrode 6 and the positive electrode 9.

[0067] After the shingling is completed, multiple groups of N-type double-sided solar cells 1 are made into solar panels for light-powered generation. When used for a long time, the conductive adhesive in the splicing groove 25 has a slow volatilization effect and long-lasting conductivity due to the wrapping and protection of the four groups of splicing components 11 on the peripheral side. However, due to the continuous change of outdoor temperature difference, the conductive adhesive in the splicing groove 25 will inevitably volatilize partially and decrease. At this time, since the content of the conductive adhesive in the splicing groove 25 decreases, the pressure in the splicing groove 25 decreases. And because the rotating plate 22 cannot continue to rotate towards the negative electrode 9 end under the blocking action of the baffle 19 and the vertical block 24, the pressure difference between the pressure in the inner cavity 13 and the pressure in the splicing groove 25 increases continuously. When the pressure difference on both sides of the pressure valve 18 is greater than the set pressure preset value, the pressure valve 18 opens, and the conductive adhesive in the inner cavity 13 continuously drains into the splicing groove 25 through the glue outlet 17 for compensation, thereby ensuring the full filling effect of the conductive adhesive in the splicing groove 25, effectively avoiding the decrease in its conductivity due to the reduction of the content of the conductive adhesive in the splicing groove 25, and even more seriously, causing a short circuit in the series circuit of the N-type double-sided solar cells 1.

[0068] At the same time, when the conductive adhesive in a certain inner cavity 13 is drained, due to the interconnection of the communication holes 14, the conductive adhesives in multiple inner cavities 13 flow through each other along the communication holes 14, thereby ensuring the uniformity of the conductive adhesive in the inner cavities 13 and effectively avoiding the support effect of the rubber airbag 12 on the top N-type double-sided solar cells 1.

[0069] This device effectively solves the parallelism and stability during the stacking of multiple groups of N-type double-sided solar cells 1. The discharge regulation of the conductive adhesive is strong, the matching accuracy of the positive electrode 6 and the negative electrode 9 during stacking is high, the injection amount regulation of the conductive adhesive is strong, the adaptability and adjustability are good. Especially during the use process, the conductive adhesive in the splicing groove 25 is replenished in a timely manner, and the conductivity and light conversion rate are high.

[0070] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variant thereof are intended to cover non-exclusively, so that a process, method, article or device including a series of elements not only includes those elements but also includes other elements not explicitly listed, or also includes elements inherent to this process, method, article or device.

[0071] Although the embodiments of the present invention have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. An N-type double-sided battery structure, comprising an N-type double-sided battery cell, characterized in that, On one side of the top of the N-type double-sided cell, multiple groups of positive electrodes are evenly arranged in an array. On the other side of the bottom of the N-type double-sided cell, multiple groups of partitions are evenly arranged in an array. A through hole is provided inside the partition. On the other side of the bottom of the N-type double-sided cell, multiple groups of negative electrodes are evenly arranged in an array. The negative electrode is matched with the through hole in the partition, and the positive electrode is matched with the negative electrode; On the bottom of the partition, four groups of splicing components are evenly arranged in an array. A splicing groove is formed between the four groups of splicing components. The negative electrode is located at the center of the splicing groove. The splicing component includes a rubber airbag. The top of the rubber airbag is fixedly connected to the bottom of the partition. The openings of the four groups of rubber airbags all face the negative electrode. An inner cavity is provided inside the rubber airbag, and conductive glue is provided inside the inner cavity; At the top of one end of the rubber airbag close to the negative electrode, there is a fixing plate. The top of the fixing plate is fixedly connected to the bottom of the partition. An adhesive outlet is provided inside the fixing plate. A pressure valve is provided inside the adhesive outlet. At one end of the bottom of the fixing plate close to the negative electrode, there is a baffle. At the other end of the bottom of the fixing plate, there is a hinge seat. A torsion spring is provided inside the hinge seat. The two sides of the torsion spring are rotationally connected with a rotating plate. An elastic connecting piece is provided at the bottom of the rotating plate. A protective bottom plate is provided at the bottom of the elastic connecting piece. The end of the protective bottom plate away from the negative electrode is fixedly connected to the inner wall of the rubber airbag; The four groups of rubber airbags are all interconnected through communication holes. Pressure sensor modules are provided on the outer surfaces of the rotating plates close to the negative electrode; On one side of the top of the protective bottom plate close to the negative electrode, there is a vertical block. The bottom of the elastic connecting piece is in contact with the side of the vertical block away from the negative electrode. The end face of the vertical block away from the positive electrode and the end face of the rotating plate close to the negative electrode are located on the same vertical plane. The vertical block limits the bottom of the rotating plate when the rotating plate rotates, preventing the rotating plate from rotating towards the negative electrode end when rotating.

2. The N-type double-sided battery structure according to claim 1, characterized in that: The N-type double-sided cell includes an N-type silicon substrate. An aluminum oxide passivation layer is provided on the top of the N-type silicon substrate. A first silicon nitride antireflection layer is provided on the top of the aluminum oxide passivation layer. A boron doping layer is provided at the bottom of the positive electrode. The other end of the boron doping layer extends into the N-type silicon substrate. The top of the boron doping layer is in contact with the bottom of the aluminum oxide passivation layer.

3. The N-type double-sided battery structure according to claim 2, characterized in that: An ion-implanted phosphorus doping layer is provided at the bottom of the N-type silicon substrate. A second silicon nitride antireflection layer is provided at the bottom of the ion-implanted phosphorus doping layer. The top of the negative electrode passes through the second silicon nitride antireflection layer and is in contact with the inside of the ion-implanted phosphorus doping layer.

4. The N-type double-sided battery structure according to claim 1, characterized in that: The pressure valve is provided with a preset pressure value. After the conductive glue is cured, it has conductivity and adhesiveness, and the volume of the conductive glue decreases after curing.

5. The N-type double-sided battery structure according to claim 1, characterized in that: The splicing components are mutually matched and contacted at the head and tail. The opening of the splicing groove faces downward, and the peripheral sides of the splicing groove are all hermetically connected.

6. The N-type double-sided battery structure according to claim 1, characterized in that: The distances between the four groups of splicing components and the negative electrode are all equal. The aspect ratio of the length and width of the splicing groove is the same as that of the positive electrode. The total content of the conductive glue in the four groups of inner cavities is greater than the volume of the splicing groove.

7. The N-type double-sided battery structure according to claim 1, characterized in that: The end face of the elastic connecting piece close to the negative electrode is made of an elastic non-conductive material. The bottom surface of the protective bottom plate is provided with a friction surface.

8. The N-type double-sided battery structure according to claim 1, characterized in that: The N-type double-sided cell is placed obliquely. The four groups of the splicing components are respectively an upper inclined group, a lower inclined group, a front group, and a rear group. The pressure value detected by the pressure sensor module at the end of the splicing component of the upper inclined group is less than the pressure value detected by the pressure sensor module at the end of the splicing component of the lower inclined group.

9. The N-type double-sided battery structure according to claim 1, characterized in that: A barrier elastic sheet is provided on the bottom of the baffle and the outer surface of the rotating plate. The barrier elastic sheet is not adhered to the conductive adhesive and is non-conductive.

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