Perovskite solar cell and preparation method thereof

Abstract

The application is suitable for the technical field of perovskite solar cells, and provides a perovskite solar cell and a preparation method.The perovskite solar cell comprises, from bottom to top, a transparent conductive substrate, an electron transport layer, a perovskite absorption layer, a two-dimensional perovskite modification layer, a hole transport layer and an electrode.The hole transport layer is partially embedded in the two-dimensional perovskite modification layer and forms contact with the perovskite absorption layer.The perovskite solar cell provided by the application uses two-dimensional perovskite to modify the surface of the perovskite absorption layer, which can passivate the surface defects of the perovskite absorption layer, reduce the defect state density, improve the quality of the perovskite absorption layer, improve the battery efficiency, block the migration of halogen ions on the surface of the perovskite absorption layer and block the erosion of water, and improve the stability of the material.Furthermore, the hole transport layer directly contacts with the perovskite absorption layer, which avoids the inhibition of the two-dimensional perovskite modification layer on the hole transport, and further improves the battery efficiency.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of perovskite solar cells, in particular to a perovskite solar cell and a preparation method thereof. BACKGROUND

[0002] Perovskite solar cells have been widely concerned due to their excellent photoelectric properties such as adjustable band gap, high light absorption coefficient, long carrier lifetime and diffusion length, high defect tolerance, low-cost low-temperature liquid phase preparation method, etc., and are considered as a strong competitor of the next generation of new photovoltaic materials.

[0003] In the prior art, although the perovskite absorption layer of the perovskite solar cell is prepared by a low-energy-consumption and low-cost low-temperature liquid phase method, a large number of surface defects are introduced during the preparation process, which can cause serious non-equilibrium carrier recombination and form non-radiative recombination centers, thereby affecting the efficiency of the perovskite solar cell, and the migration of halogen ions in the perovskite absorption layer and the erosion of water in the perovskite absorption layer can result in poor stability of the perovskite solar cell. SUMMARY

[0004] The present application provides a perovskite solar cell, which aims to solve the problems of low battery efficiency and poor stability of the perovskite solar cell in the prior art.

[0005] The present application is achieved in this way, and provides a perovskite solar cell, which comprises, from bottom to top, a transparent conductive substrate, an electron transport layer, a perovskite absorption layer, a two-dimensional perovskite modification layer, a hole transport layer and an electrode, wherein the hole transport layer is partially embedded in the two-dimensional perovskite modification layer and forms contact with the perovskite absorption layer.

[0006] Preferably, the material of the two-dimensional perovskite modification layer is a two-dimensional perovskite, and the general formula of the two-dimensional perovskite is A'2A n-1 Pb n I 3n-1 A' and A are respectively one of an amino cation and an ether cation, and A' and A are different from each other.

[0007] Preferably, a plurality of conductive portions are uniformly distributed on the surface of the two-dimensional perovskite modification layer close to the hole transport layer, and the plurality of conductive portions are embedded in the two-dimensional perovskite modification layer and form contact with the perovskite absorption layer.

[0008] Preferably, the transparent conductive substrate comprises a transparent glass substrate and a transparent conductive film arranged on the transparent glass substrate, and the electron transport layer is arranged on the transparent conductive film.

[0009] The present application also provides a preparation method of the perovskite solar cell, which comprises the following steps:

[0010] preparing an electron transport layer on the transparent conductive substrate;

[0011] preparing a perovskite absorption layer on the electron transport layer;

[0012] depositing a two-dimensional perovskite modification layer on the perovskite absorption layer using a mask plate, and taking out the mask plate;

[0013] depositing a hole transport layer on the two-dimensional perovskite modification layer;

[0014] depositing an electrode on the hole transport layer.

[0015] Preferably, the step of preparing an electron transport layer on the transparent conductive substrate further comprises:

[0016] cleaning the transparent conductive substrate: using a dust-free paper dipped in ethanol to wipe the surface of the transparent conductive substrate, then sequentially ultrasonic cleaning the transparent conductive substrate with cleaning agent, deionized water, acetone, and ethanol for 15-20 minutes, drying the transparent conductive substrate in an oven, and treating with O3 UV for 10-20 minutes to complete the cleaning of the transparent conductive substrate.

[0017] Preferably, the material of the electron transport layer is SnO2 nanoparticles; and the step of preparing an electron transport layer on the transparent conductive substrate comprises:

[0018] dissolving SnO2 nanoparticles and deionized water in a volume ratio of 1:5 to configure a SnO2 precursor solution, coating the SnO2 precursor solution on the transparent conductive substrate, and preparing an electron transport layer with a thickness of 50-80 nm after annealing.

[0019] Preferably, the material of the two-dimensional perovskite modification layer is two-dimensional perovskite BA2MAPb2I7, BA is n-butylamine cation, and MA is methylamine cation.

[0020] Preferably, the step of depositing a two-dimensional perovskite modification layer on the perovskite absorption layer using a mask plate, and taking out the mask plate comprises:

[0021] placing a mask plate on the perovskite absorption layer, and placing the battery piece with the mask plate into a vacuum coating machine, depositing PbI2 with a thickness of 100-200 nm at a speed of 0.1-0.2 A / s under a pressure of 4×10 -4 ~ 6×10 -4 Pa. Preferably, the electrode is a transparent electrode.

[0022] ​The battery piece on which the PbI2 is deposited is moved into a low-temperature oven, and butylamine and methylamine powder are mixed in a ratio of 2:1 to fumigate, a two-dimensional perovskite modification layer formed by two-dimensional perovskite BA2MAPb2I7 is obtained, and the mask plate is removed.

[0023] Preferably, the mask plate is a Mask metal mask plate, and the mesh number of the mask plate is 200-1000 mesh.

[0024] The perovskite solar cell provided by the application sets a two-dimensional perovskite modification layer between the perovskite absorption layer and the hole transport layer, uses the two-dimensional perovskite to modify the surface of the perovskite absorption layer, can passivate the surface defects of the perovskite absorption layer, reduce the defect state density, improve the quality of the perovskite absorption layer to improve the cell efficiency, can also block the migration of halogen ions on the surface of the perovskite absorption layer and block the erosion of water, and improves the stability of the material; moreover, the hole transport layer is partially embedded in the two-dimensional perovskite and contacts the perovskite absorption layer, ensures the direct contact between the hole transport layer and the perovskite absorption layer, avoids the inhibitory effect of the two-dimensional perovskite modification layer on the hole transport, and further improves the cell efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 A structure schematic diagram of a perovskite solar cell provided by the first embodiment of the application;

[0026] Figure 2 A flowchart of a perovskite solar cell preparation method provided by the second embodiment of the application;

[0027] Figure 3 A structure schematic diagram of a mask plate used in the perovskite solar cell preparation method provided by the second embodiment of the application. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solutions and advantages of the application clearer, the application is further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the application, and are not used to limit the application.

[0029] The embodiment of the present application provides a perovskite solar cell, which is characterized in that a two-dimensional perovskite modification layer is arranged between the perovskite absorption layer and the hole transport layer, the two-dimensional perovskite is used to modify the surface of the perovskite absorption layer, the two-dimensional perovskite can passivate the surface defects of the perovskite absorption layer, reduce the defect state density, improve the quality of the perovskite absorption layer, improve the cell efficiency, and can also block the migration of halogen ions on the surface of the perovskite absorption layer and prevent the erosion of water, thereby improving the stability of the material; in addition, the hole transport layer is partially embedded in the two-dimensional perovskite and is in contact with the perovskite absorption layer, so that the hole transport layer is in direct contact with the perovskite absorption layer, and the inhibition of the two-dimensional perovskite modification layer on the hole transport is avoided, thereby further improving the cell efficiency.

[0030] Embodiment one

[0031] Please refer to Figure 1 The embodiment of the present application provides a perovskite solar cell, which comprises, from bottom to top, a transparent conductive substrate 10, an electron transport layer 3, a perovskite absorption layer 4, a two-dimensional perovskite modification layer 5, a hole transport layer 6 and an electrode 7, and the hole transport layer 6 is partially embedded in the two-dimensional perovskite modification layer 5 and is in contact with the perovskite absorption layer 4.

[0032] As an embodiment of the present application, the transparent conductive substrate 10 comprises, from bottom to top, a transparent glass substrate 1 and a transparent conductive film 2, and the electron transport layer 3 is arranged on the transparent conductive film 2. The transparent glass substrate 1 is used for transmitting sunlight, and the transparent conductive film 2 is used for transmitting light and conducting electricity.

[0033] As an embodiment of the present application, the material of the transparent conductive film 2 is one of ITO (indium tin oxide), FTO (fluorine-doped tin oxide), IWO (tungsten-doped indium oxide) and ICO (cerium-doped indium oxide). The material of the transparent conductive film 2 can be flexibly selected according to actual needs.

[0034] As an embodiment of the present application, the material of the electron transport layer 3 is at least one of PCBM, TiO2, ZnO, SnO2, H-PDI and F-PDI.

[0035] As an embodiment of the present application, the material of the perovskite absorption layer 4 is an organic-inorganic hybrid perovskite, and the general formula is ABX3; wherein A is at least one of CH3NH3 + (MA + ), CH(CH2)2+(FA + ) and Cs + , B is one of Pb 2+ , Sn 2+ and Ge 2+ , and X is Cl - , Br - and I- at least one of PbI2, SnI2, and BiI3.

[0036] As an embodiment of the present application, the material of the two-dimensional perovskite modification layer 5 is a two-dimensional perovskite, and the general formula of the two-dimensional perovskite is A'2A n-1 Pb n I 3n-1 A' and A are respectively one of an amino cation and an ether cation, and A' and A are different from each other.

[0037] The amino cation can be specifically a n-butylamine cation (BA) or a methylamine cation (MA), and the ether cation can be specifically a methyl ether cation (FA), which can be flexibly set according to actual conditions. n-1 Pb n I 3n-1 A' and A in the formula can be both amino cations, and A' and A are different from each other; for example, A' and A correspond to a n-butylamine cation (BA) and a methylamine cation (MA) respectively; A' and A can also be one of an amino cation and the other of an ether cation; for example, A' is a methylamine cation (MA), and A is a methyl ether cation (FA).

[0038] The perovskite solar cell of the embodiment of the present application sets a two-dimensional perovskite modification layer 5 between the perovskite absorption layer 4 and the hole transport layer 6, uses the two-dimensional perovskite to modify the surface of the perovskite absorption layer 4, which can passivate the surface defects of the perovskite absorption layer 4, reduce the defect state density, improve the quality of the perovskite absorption layer 4 to improve the cell efficiency, and block the migration of halogen ions on the surface of the perovskite absorption layer 4 and the erosion of water, thereby improving the stability of the material; moreover, compared with the scheme of setting only a two-dimensional perovskite modification layer 5 between the perovskite absorption layer 4 and the hole transport layer 6, the hole transport layer 6 is partially embedded in the two-dimensional perovskite, forming a structure in which the hole transport layer 6 and the perovskite absorption layer 4 are embedded in each other, realizing the direct contact of the hole transport layer 6 and the perovskite absorption layer 4, avoiding the inhibitory effect of the two-dimensional perovskite modification layer 5 on the hole transport, and further improving the cell efficiency.

[0039] As an embodiment of the present application, the surface of the hole transport layer 6 close to the two-dimensional perovskite modification layer 5 is provided with a plurality of uniformly distributed conductive portions 61, and the plurality of conductive portions 61 are embedded in the two-dimensional perovskite modification layer 5 and form contact with the perovskite absorption layer 4.

[0040] In the embodiment, the number of the conductive portions 61 is not limited. The two-dimensional perovskite modification layer 5 is provided with pores corresponding to the plurality of conductive portions 61, and the plurality of conductive portions 61 of the hole transport layer 6 are embedded in the pores of the two-dimensional perovskite modification layer 5 and form contact with the perovskite absorption layer 4, thereby ensuring the direct contact of the hole transport layer 6 and the perovskite absorption layer 4, avoiding the inhibitory effect of the two-dimensional perovskite on the hole transport, and improving the cell efficiency.

[0041] In this embodiment, the holes on the two-dimensional perovskite modification layer 5 are arranged in a grid. The two-dimensional perovskite modification layer 5 can be deposited on the perovskite absorption layer 4 using a mask, and after the mask is removed, the holes arranged in a grid are obtained, so that the two-dimensional perovskite modification layer 5 is arranged in a grid array. When the hole transport layer 6 is deposited on the two-dimensional perovskite modification layer 5, part of the material of the hole transport layer 6 can be deposited into the holes of the two-dimensional perovskite modification layer 5, forming a structure in which the two-dimensional perovskite modification layer 5 is embedded in the hole transport layer 6, which can improve the stability of the battery; and the hole transport layer 6 can be directly in contact with the perovskite absorption layer 4.

[0042] The perovskite solar cell provided by the embodiment of the present application sets the two-dimensional perovskite modification layer 5 between the perovskite absorption layer 4 and the hole transport layer 6, uses the two-dimensional perovskite to modify the surface of the perovskite absorption layer 4, which can passivate the surface defects of the perovskite, reduce the defect state density, improve the quality of the perovskite thin film, improve the efficiency of the battery, block the migration of halogen ions on the surface of the perovskite absorption layer 4, and block the erosion of water, thereby improving the stability of the perovskite absorption layer 4; and the structure in which the hole transport layer 6 is embedded in the two-dimensional perovskite modification layer 5 ensures that the hole transport layer 6 is in direct contact with the perovskite absorption layer 4, avoids the inhibition of the two-dimensional perovskite to the hole transport, and further improves the efficiency of the battery.

[0043] Embodiment two

[0044] Please refer to Figure 2 The embodiment also provides a preparation method of the perovskite solar cell, which is used for preparing the perovskite solar cell and includes the following steps.

[0045] In step S10, an electron transport layer 3 is prepared on the transparent conductive substrate 10.

[0046] As an embodiment of the present application, the material of the electron transport layer 3 is SnO2 nanoparticles; and step S10 specifically includes:

[0047] The SnO2 nanoparticles and deionized water are dissolved and configured into a SnO2 precursor solution at a volume ratio of 1:5, the SnO2 precursor solution is coated on the transparent conductive substrate, and after annealing, the electron transport layer 3 with a thickness of 50-80 nm is prepared.

[0048] As a preferred embodiment of the present application, in step S10, the annealing temperature is 145-155℃.

[0049] As a preferred embodiment of the present application, before step S10, the method further includes:

[0050] Cleaning the transparent conductive substrate 10: using a dust-free paper dipped in ethanol to wipe the surface of the transparent conductive substrate 10, and then sequentially ultrasonic cleaning the transparent conductive substrate 10 with a cleaning agent, deionized water, acetone, and ethanol for 15-20 minutes. The transparent conductive substrate 10 is dried in an oven and treated with O3UV for 10-20 minutes to complete the cleaning of the transparent conductive substrate 10.

[0051] In this embodiment, by cleaning the transparent conductive substrate 10, the good conductive effect of the transparent conductive substrate 10 is ensured, which is beneficial to improve the battery efficiency.

[0052] As an embodiment of the present application, the transparent conductive substrate 10 includes a transparent glass substrate 1 and a transparent conductive film 2 arranged in order from bottom to top; step S10 specifically includes: preparing an electron transport layer 3 on the transparent conductive film 2.

[0053] Step S20, preparing a perovskite absorption layer 4 on the electron transport layer 3;

[0054] As an embodiment of the present application, the constituent material of the perovskite absorption layer 4 is MA+ free organic-inorganic hybrid perovskite FA 0.91 Cs 0.09 PbI3; step S20 specifically includes:

[0055] configuring FA 0.91 Cs 0.09 PbI3 precursor solution: adding PbI2; FAI; and CsI in a chemical ratio of 1:0.91:0.09 into a DMF / DMSO mixed solution in a volume ratio of 4.75:1, to a solution concentration of 1.25 mol / L, and then adding MaCl to a concentration of 23 mol% to stabilize the perovskite phase;

[0056] The perovskite film is prepared by a slot-die slot coating method, and after coating, annealing at 145-170°C for 10-15 minutes to complete the preparation of the perovskite absorption layer 4.

[0057] In this embodiment, MA+ free organic-inorganic hybrid perovskite FA 0.91 Cs 0.09 PbI3 is used as the material of the perovskite absorption layer 4, and its good stability can greatly improve the stability of the perovskite absorption layer 4.

[0058] Step S30, depositing a two-dimensional perovskite modification layer 5 on the perovskite absorption layer 4 using a mask plate 8, and removing the mask plate;

[0059] The structure of the mask plate 8 is as follows Figure 3As shown, the mask 8 has uniformly distributed mesh 81, and the mesh count of the mask 8 is unlimited. When the two-dimensional perovskite modification layer 5 is deposited on the perovskite absorber layer 4, the two-dimensional perovskite is deposited within the 81 of the mask and contacts the perovskite absorber layer 4, while the frame portion of the mask 8 does not form two-dimensional perovskite material. After the mask is removed, pores that match the shape of the frame of the mask 8 can be formed, which facilitates the subsequent embedding of the hole transport layer 6 material into the pores and its contact with the perovskite absorber layer 4.

[0060] In one embodiment of the present invention, the mask is a metal mask with a mesh size of 200 to 1000. Preferably, the mask has a mesh size of 500, which allows for sufficient contact between the hole transport layer 6 material and the perovskite absorber layer 4.

[0061] In one embodiment of the present invention, the material of the two-dimensional perovskite modification layer 5 is two-dimensional perovskite BA2MAPb2I7, where BA is a n-butylamine cation and MA is a methylamine cation; step S30 includes:

[0062] A mask 8 is placed on the perovskite absorber layer 4, and the solar cell with the mask 8 placed on it is placed in a vacuum coating machine. The coating process is carried out at a depth of 4×10⁻⁶ mm. -4 ~6×10 -4 Under a pressure of Pa, The deposition thickness at the velocity is PbI2;

[0063] The PbI2-deposited solar cell was transferred into a low-temperature oven, and butylamine and methylamine powder were mixed in a 2:1 ratio and steamed to obtain a two-dimensional perovskite modification layer 5 formed by two-dimensional perovskite BA2MAPb2I7. The mask was then removed.

[0064] In a preferred embodiment of the present invention, a battery cell with a photomask placed on it is placed in a vacuum coating machine and coated under a pressure of 5×10⁻⁶. -4 Pa below, with The deposition thickness at the velocity is PbI2.

[0065] Step S40: Deposit hole transport layer 6 on two-dimensional perovskite modified layer 5;

[0066] In one embodiment of the present invention, the hole transport layer 63 is made of inorganic p-type semiconductor NiO. X Step S40 specifically includes:

[0067] A NiO layer with a thickness of approximately 80-100 nm was deposited on the two-dimensional perovskite modified layer 5 using magnetron sputtering. X Thin film, NiO XThe thin film part is embedded in the pores of the two-dimensional perovskite modification layer 5 and is in contact with the perovskite absorption layer 4. The two-dimensional perovskite is used to modify the surface of the perovskite absorption layer 4, which can passivate the surface defects of the perovskite, reduce the defect state density, improve the quality of the perovskite thin film, improve the battery efficiency, block the migration of halogen ions on the surface of the perovskite absorption layer 4, and block the erosion of water, thereby improving the stability of the material. Moreover, the two-dimensional perovskite is embedded in the hole transport layer 6, which ensures that the hole transport layer 6 is in direct contact with the perovskite absorption layer 4, and avoids the inhibition of the two-dimensional perovskite on the hole transport, thereby further improving the battery efficiency.

[0068] In step S50, the electrode 7 is deposited on the hole transport layer 6.

[0069] As an embodiment of the present application, the material of the electrode 7 is Ag, and the deposition of the electrode 7 on the hole transport layer 6 specifically includes: using a thermal evaporation method to deposit an Ag electrode on the electron transport layer 3, and the thickness of the electrode 7 is about 55-65 nm.

[0070] As a preferred embodiment of the present application, the thickness of the electrode 7 is about 60 nm.

[0071] The perovskite solar cell preparation method provided by the embodiment of the present application uses a mask to deposit a two-dimensional perovskite modification layer on a perovskite absorption layer, removes the mask, and then deposits a hole transport layer on the two-dimensional perovskite modification layer, so that the hole transport layer is partially embedded in the two-dimensional perovskite and in contact with the perovskite absorption layer. The two-dimensional perovskite is used to modify the surface of the perovskite absorption layer, which can passivate the surface defects of the perovskite absorption layer, reduce the defect state density, improve the quality of the perovskite absorption layer, improve the battery efficiency, block the migration of halogen ions on the surface of the perovskite absorption layer, and block the erosion of water, thereby improving the stability of the material. Moreover, the hole transport layer is partially embedded in the two-dimensional perovskite and in contact with the perovskite absorption layer, which ensures that the hole transport layer is in direct contact with the perovskite absorption layer, and avoids the inhibition of the two-dimensional perovskite modification layer on the hole transport, thereby further improving the battery efficiency.

[0072] The above is only a preferred embodiment of the present application, and is not intended to limit the present application. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A perovskite solar cell, characterized by, The device comprises, from bottom to top, a transparent conductive substrate, an electron transport layer, a perovskite absorption layer, a two-dimensional perovskite modification layer, a hole transport layer, and an electrode, wherein the hole transport layer is partially embedded in the two-dimensional perovskite modification layer and in contact with the perovskite absorption layer; the surface of the hole transport layer close to the two-dimensional perovskite modification layer is provided with a plurality of uniformly distributed conductive portions, the two-dimensional perovskite modification layer is provided with apertures corresponding to the plurality of conductive portions, the apertures on the two-dimensional perovskite modification layer are arranged in a grid, and the plurality of conductive portions are embedded in the apertures and in contact with the perovskite absorption layer.

2. The perovskite solar cell according to claim 1, characterized in that, The material of the two-dimensional perovskite modification layer is a two-dimensional perovskite, and a general formula of the two-dimensional perovskite is A'2A n-1 Pb n I 3n-1 , A' and A are respectively one of an amino cation and an ether cation, and A' and A are different from each other. 3.The perovskite solar cell of claim 1, wherein The transparent conductive substrate comprises a transparent glass substrate and a transparent conductive film provided on the transparent glass substrate, and the electron transport layer is provided on the transparent conductive film.

4. A method for producing a perovskite solar cell, for producing a perovskite solar cell according to any one of claims 1 to 3, characterized in that, The method comprises the following steps: preparing an electron transport layer on a transparent conductive substrate; preparing a perovskite absorption layer on the electron transport layer; depositing a two-dimensional perovskite modification layer on the perovskite absorption layer using a mask, and removing the mask; depositing a hole transport layer on the two-dimensional perovskite modification layer; depositing an electrode on the hole transport layer.

5. The method of claim 4, wherein the perovskite solar cell is prepared by the steps of: Before the step of preparing an electron transport layer on a transparent conductive substrate, the method further comprises the following steps: cleaning the transparent conductive substrate: using a dust-free paper dipped in ethanol to wipe the surface of the transparent conductive substrate, then sequentially ultrasonically cleaning the transparent conductive substrate with a cleaning agent, deionized water, acetone, and ethanol for 15-20 minutes, drying the transparent conductive substrate in an oven, and treating the transparent conductive substrate with O3UV for 10-20 minutes to complete the cleaning of the transparent conductive substrate.

6. The method of claim 4, wherein the perovskite solar cell is prepared by the steps of: The material of the electron transport layer is SnO2 nanoparticles; the step of preparing an electron transport layer on a transparent conductive substrate comprises the following steps: dissolving SnO2 nanoparticles and deionized water in a volume ratio of 1:5 to prepare a SnO2 precursor solution, coating the SnO2 precursor solution on the transparent conductive substrate, and annealing to obtain an electron transport layer with a thickness of 50-80 nm.

7. The method for preparing a perovskite solar cell according to claim 4, characterized in that, The material of the two-dimensional perovskite modification layer is two-dimensional perovskite BA2MAPb2I7, BA is n-butylamine cation, and MA is methylamine cation.

8. The method for preparing a perovskite solar cell according to claim 7, characterized in that, The step of depositing a two-dimensional perovskite modification layer on the perovskite absorption layer using a mask, and removing the mask comprises the following steps: Placing a mask on the perovskite absorption layer, placing the battery piece with the mask into a vacuum coating machine, depositing PbI2 with a thickness of 1000-1600 Å at a speed of 0.5-1.5 Å / S under a pressure of 4×10 -4 Pa. -4 Pa. moving the battery piece on which PbI2 is deposited into a low-temperature oven, mixing butylamine and methylamine powders in a ratio of 2:1 for fumigation, obtaining a two-dimensional perovskite modification layer formed by two-dimensional perovskite BA2MAPb2I7, and removing the mask.

9. The method of claim 8, wherein the perovskite solar cell is prepared by the steps of: The mask is a Mask metal mask, and the mesh number of the mask is 200-1000 meshes.

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