Display device and method of manufacturing the same

Abstract

The display device disclosed herein comprises: a display area (2) comprising a thin film transistor; a frame area (F) surrounding the display area; a terminal portion (T) arranged in the frame area; a resin layer (8) arranged above a substrate (7); an inorganic insulating layer (9) arranged above the resin layer and having an opening portion (10); and a conductive pattern (11) arranged above the inorganic insulating layer (9) at a position other than a position above the opening portion (10).

Description

Technical Field

[0001] The present disclosure relates to a display device and a method for manufacturing the display device. Background Art

[0002] Flexible display devices have been developed using flexible substrates. For example, Patent Document 1 discloses a display device in which a portion of the substrate where wiring is formed is folded back toward the back of the display area in a component mounting area where components such as a flexible printed circuit board and a driver circuit are mounted.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-78057 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] In the display area and component mounting area of the above-mentioned display device, a plurality of insulating layers are stacked for adjusting the height of the wiring or insulating the wiring from each other. These insulating layers include a resin layer formed by a resin material. When the resin layer is heated to harden it, gas is sometimes generated from the resin layer. In addition, even after the resin layer is hardened, if heat is applied, the resin layer sometimes generates gas. Therefore, in the case where the resin layer is covered with a material that is difficult for gas to penetrate, the gas generated from the resin layer will accumulate between the resin layer and the material covering it (for example, an inorganic insulating layer formed by an inorganic material). As a result, due to the accumulated gas, the resin layer and the material covering it may peel off.

[0008] The present disclosure has been made in view of the above-mentioned problems. One aspect of the present disclosure provides a display device and a method for manufacturing the display device, which can suppress separation between a resin layer and a material covering the resin layer.

[0009] Solutions for solving problems

[0010] The display device disclosed herein comprises: a display area including a thin film transistor; a frame area surrounding the display area; a terminal portion arranged in the frame area; a resin layer arranged above a substrate; an inorganic insulating layer arranged above the resin layer and having an opening portion; and a conductive pattern arranged above the inorganic insulating layer at a position other than a position above the opening portion.

[0011] In the method for manufacturing a display device disclosed herein, a resin layer is formed on a substrate, an inorganic insulating layer is formed on the resin layer, a conductive pattern is formed on the inorganic insulating layer, and an opening is formed in the inorganic insulating layer.

[0012] Effects of the Invention

[0013] One aspect of the present disclosure provides a display device and a method for manufacturing the display device, which are capable of suppressing separation between a resin layer and a material covering the resin layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a schematic plan view showing the display device according to Embodiment 1.

[0015] Figure 2 yes Figure 1 Cross-sectional view along line II-II.

[0016] Figure 3 It is a cross-sectional view showing a comparative example.

[0017] Figure 4 This is a partial plan view of the bent portion of the first embodiment.

[0018] Figure 5 yes Figure 4 VV line cross-sectional view.

[0019] Figure 6 yes Figure 4 VI-VI line cross-sectional view.

[0020] Figure 7 yes Figure 4 VII-VII line cross-sectional view.

[0021] Figure 8 This is a partial plan view of the bent portion of the second embodiment.

[0022] Figure 9 yes Figure 8 IX-IX line cross-sectional view.

[0023] Figure 10 This is a partial plan view of a bent portion in accordance with a third embodiment.

[0024] Figure 11 yes Figure 10 XI-XI line cross-sectional view.

[0025] Figure 12 This is a cross-sectional view showing the structure of a semi-finished product in the first step included in the manufacturing process of the display device manufacturing method of the present disclosure.

[0026] Figure 13This is a cross-sectional view showing the structure of a semi-finished product in the second step included in the manufacturing flow in the method for manufacturing a display device of the present disclosure.

[0027] Figure 14 This is a cross-sectional view showing the structure of a semi-finished product in the third step included in the manufacturing flow in the method for manufacturing a display device of the present disclosure.

[0028] Figure 15 This is a cross-sectional view showing the structure of a semi-finished product in the fourth step included in the manufacturing flow in the method for manufacturing a display device of the present disclosure.

[0029] Figure 16 It is a cross-sectional view showing the structure of a semi-finished product in the fifth step included in the manufacturing flow in the manufacturing method of the present disclosure.

[0030] Figure 17 It is a cross-sectional view showing the structure of a semi-finished product in the sixth step included in the manufacturing flow in the manufacturing method of the present disclosure.

[0031] Figure 18 This is a flowchart of the first to sixth steps of the method for manufacturing a display device of the present disclosure. DETAILED DESCRIPTION

[0032] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In the accompanying drawings, identical or equivalent elements are denoted by the same reference numerals. Explanations of identical or equivalent components in each embodiment will not be repeated.

[0033] <Implementation Method 1>

[0034] Figure 1 This is a schematic plan view showing a display device 1 according to Embodiment 1. The display device 1 includes a display area 2 and a frame area F surrounding the display area 2. The frame area F includes a bent portion B and a terminal portion T. In the frame area F, the bent portion B is provided between the display area 2 and the terminal portion T.

[0035] like Figure 1 As shown, in the display area 2, a plurality of pixels 21 are arranged in a matrix, for example. A thin film transistor 3 (hereinafter referred to as "TFT (Thin Film Transistor)") is provided in each of the plurality of pixels 21. Although not shown in the figure, a plurality of terminals are provided in the terminal portion T, and the circuit and control circuit provided in the terminal portion T are electrically connected to the plurality of terminals. Figure 1 In the diagram, the X direction is the first direction, and the Y direction is the second direction intersecting the first direction. The X and Y directions are perpendicular to each other within a plane. The X and Y directions correspond to the horizontal and vertical directions of the display device 1 having a rectangular outline. The display area 2, the bent portion B, and the terminal portion T are arranged along the first direction.

[0036] The first direction is not limited to the X direction, and may be any direction as long as it is a direction from the display area 2 to the terminal portion T. For example, the first direction may be a direction inclined with respect to the X direction.

[0037] exist Figure 1 In the embodiment, the bent portion B is bent along an imaginary line along the Y direction, thereby folding the terminal portion T back toward the back side of the display area 2. This configuration allows the back side of the terminal portion T to face the back side of the display area 2. That is, when viewed from above, a portion of the frame region F overlaps with the display area 2. This reduces the area occupied by the frame region F, enabling a narrow-frame display device 1 to be realized.

[0038] Figure 2 yes Figure 1 Cross-sectional view along line II-II. Figure 2 The partial cross-sectional structure of the display area 2 taken mainly along the X direction near the TFT 3 is shown. Figure 2 , the up-down direction of the display device 1 perpendicular to the X direction is referred to as the Z direction. In this specification, the X direction, the Y direction, and the Z direction are directions along the three axes of the orthogonal coordinate system.

[0039] from Figure 2 As can be seen, each of the pixels 21 includes a light-emitting element 230 such as a liquid crystal or an organic EL (Electro-Luminescence) and a TFT 3 for controlling the light-emitting element 230 .

[0040] The base material 7 is formed of, for example, a flexible resin material.

[0041] The primer film 24 is a layer provided on the substrate 7 .

[0042] A TFT 3 is formed on the undercoat film 24 . The TFT 3 includes a semiconductor layer 34 including a channel portion, a source region, and a drain region; a gate insulating film 35 ; a gate electrode 33 ; a drain electrode 31 ; a source electrode 32 ; a first interlayer film 36 ; and a second interlayer film 37 .

[0043] Each of the plurality of pixels 21 also includes a gate wiring 38, a high-voltage power supply line 40, and a capacitor wiring 39. Although not shown, the display area 2 includes a light emission control line, an initialization power supply line, and a source line. A portion of the source electrode 32, a portion of the drain electrode 31, and the high-voltage power supply line 40 are formed so as to extend on the second interlayer film 37.

[0044] from Figure 2As can be seen, a resin layer 8 and an inorganic insulating layer 9 are stacked on top of the TFT 3. Resin layer 8 is sometimes also referred to as a planarization film. Contact holes 8a and 9a extending to the drain electrode 31 are formed in resin layer 8 and inorganic insulating layer 9, respectively. Except for the peripheries of contact holes 8a and 9a, inorganic insulating layer 9 is removed, forming an opening 10.

[0045] An inorganic insulating layer 9, a relay electrode 111, and a protective layer 22 are stacked on the resin layer 8. In the display area 2, a relay electrode 111 is formed to cover a portion of the inorganic insulating layer 9 and fill the contact hole 9a. The relay electrode 111 is electrically connected to the drain electrode 31. The relay electrode 111 is a type of conductive pattern 11, which will be described later. Figure 2 The relay electrode 111 is connected to the drain electrode 31 of the TFT 3. The light emitting element 230 and the TFT 3 are electrically connected via the relay electrode 111. Although the details will be described later, the relay electrode 111 is electrically connected to the drain electrode 31 of the TFT 3, and the source electrode 32 of the TFT 3 is electrically connected to the source line (not shown). The end of the source line (not shown) is electrically connected to the first frame wiring 20 (see FIG. Figure 4 and Figure 5 ) one end portion, the first frame wiring 20 (refer to Figure 4 and Figure 5 ) is connected to the first frame wiring 20 (see Figure 4 and Figure 5 ) on the other end portion of the first interlayer film 36, the second interlayer film 37, the resin layer 8 and the inorganic insulating layer 9 (see Figure 5 ) of the contact hole 91 (see Figure 4 and Figure 5 ) is electrically connected to the conductive pattern 11 provided at the bent portion B described later (see Figure 4 and Figure 5 ) one end portion. Conductive pattern 11 (refer to Figure 4 and Figure 5 ) is connected to the second frame wiring 51 (see Figure 4 and Figure 5 ) on one end portion of the first interlayer film 36, the second interlayer film 37, the resin layer 8, and the inorganic insulating layer 9 (see Figure 5 ) of the contact hole 91 (see Figure 4 and Figure 5 ) and the second frame wiring 51 (see Figure 4 and Figure 5 ) is electrically connected to one end of the second frame wiring 51 (see Figure 4 and Figure 5 ) is electrically connected to the terminal (not shown) of the terminal portion T. The relay electrode 111 is connected to the conductive pattern 11 (see Figure 4 and Figure 5 ) is formed of the same material and is formed with the conductive pattern 11 (refer to Figure 4 and Figure 5 ) are formed on the same layer.

[0046] A protective layer 22 is formed to cover a portion of the relay electrode 111 and the resin layer 8. The protective layer 22 is made of a flexible material. For example, the protective layer 22 is made of an organic resin material. The laminate from the substrate 7 to the protective layer 22 is referred to as the TFT layer 300. Although not shown, the TFT layer 300 also includes wiring for power supply and signal transmission.

[0047] Resin layer 8 may generate gas due to the heating process included in the manufacturing process of display device 1 and the temperature rise during use of display device 1. However, the provision of openings 10 in inorganic insulating layer 9 allows gas generated from resin layer 8 located below inorganic insulating layer 9 to escape upward through openings 10. As a result, gas accumulation between resin layer 8 and inorganic insulating layer 9 can be suppressed. Therefore, delamination between resin layer 8 and inorganic insulating layer 9 can be suppressed.

[0048] The reason why the inorganic insulating layer 9 is required on the resin layer 8 will be described. Figure 3 As a comparative example, a cross-sectional view is shown in the case where the inorganic insulating layer 9 is not provided on the resin layer 8 . Figure 3 FIG. 1 shows a state where the wiring layer 112 is formed by partially removing the conductive layer laminated on the entire surface of the resin layer 8 by dry etching. Figure 3 It can be seen that the resin layer 8 is exposed except for the portion where the wiring layer 112 is present. Therefore, the surface of the resin layer 8 that is exposed is damaged during dry etching. As a result, dust is generated from the surface of the resin layer 8, and due to this dust, poor wiring formation such as film residue caused by poor etching occurs. Therefore, it is necessary to provide an inorganic insulating layer 9 on the resin layer 8 so that the resin layer 8 is not exposed during dry etching. However, when the entire surface of the resin layer 8 is covered by the inorganic insulating layer 9, there will be no place for the gas generated from the resin layer 8 to escape as described above. Therefore, it is necessary to provide an opening 10 for the gas to escape.

[0049] from Figure 2 It can be seen that the edge of the inorganic insulating layer 9 surrounds the edge of the relay electrode 111. That is, the size of the inorganic insulating layer 9 is larger than the size of the relay electrode 111. Therefore, all the relay electrodes 111 are placed on the inorganic insulating layer 9. As a result, the damage to the resin layer 8 caused by the etching to form the relay electrode 111 can be reduced. That is, the method of reducing damage caused by etching disclosed in the present invention can also be applied to a conductor that is provided on the same layer as the conductive pattern 11 provided in the bend portion B described later and is also provided outside the bend portion B, for example, it can also be applied to the relay electrode 111.

[0050] A light-emitting element layer 234 is formed on the TFT layer 300. The light-emitting element layer 234 includes a light-emitting element 230 formed by stacking a first electrode 231, a light-emitting layer 23, and a second electrode 233 in this order, and an edge cover 232. A sealing film 238 is formed on the light-emitting element layer 234, comprising a first inorganic film 235, an organic film 236, and a second inorganic film 237 in this order.

[0051] Figure 4 This is a diagram showing the display device 1 in the first embodiment. Figure 1 A schematic top view of the edge periphery of the display area 2 and the frame area F. Figure 4 For simplicity, the protective layer 22 is omitted and the diagram is shown as a top view from the conductive pattern 11 downward. Figure 1 and Figure 4 It can be seen that the frame region F is provided with a bent portion B.

[0052] from Figure 4 As can be seen, the conductive pattern 11 extends along the X direction. One end of the conductive pattern 11 is connected to the first frame wiring 20, and the other end of the conductive pattern 11 is electrically connected to the second frame wiring 51. Although not shown, the first frame wiring 20 connected to the conductive pattern 11 is electrically connected to the source electrode 32 of the TFT 3 in the display area 2. In addition, although not shown, the second frame wiring 51 connected to the conductive pattern 11 is electrically connected to the terminal of the terminal portion T.

[0053] like Figure 4 As shown, a wiring 62 extending along the conductive pattern 11 is provided at the bent portion B. As will be described in detail later Figure 5 As shown, wiring 62 is provided between filling layer 61 and resin layer 8. One end of wiring 62 is connected to first frame wiring 20, and the other end of wiring 62 is electrically connected to second frame wiring 51. Although not shown, wiring 62 electrically connects the same circuit connected to conductive pattern 11 to TFT 3 via first frame wiring 20 and second frame wiring 51. Wiring 62 is formed of a conductive material.

[0054] The TFTs 3 in the pixels 21 are electrically connected to the terminals via the wiring 62 and the conductive pattern 11. Thus, a control circuit (not shown) connected to the terminals T controls the light emitting elements 230 and TFTs 3 in the pixels 21 to display images in the display area 2.

[0055] Figure 5 yes Figure 4 VV line cross-sectional view. Figure 6 yes Figure 4 VI-VI line cross-section diagram. Figure 4As shown in FIG. 1 , a filling layer 61, wiring 62, a resin layer 8, and an inorganic insulating layer 9 are provided above the base material 7 at the bent portion B. Figure 4 and Figure 6 It can be seen that a plurality of openings 10 are provided in the inorganic insulating layer 9 .

[0056] Filling layer 61 is a layer used to reduce the height difference between the upper surface of second interlayer film 37 and the upper surface of substrate 7 in bend portion B. Filling layer 61 suppresses the occurrence of cracks and disconnections in wiring 62 caused by this height difference. Filling layer 61 is formed of a flexible material. For example, filling layer 61 is formed of an organic resin material.

[0057] The resin layer 8 is generally a planarizing film and is used to reduce the level difference on the surface of the display area 2. The resin layer 8 is disposed above the substrate 7 in the bent portion B. The resin layer 8 is formed of a flexible material, such as an organic resin material.

[0058] The inorganic insulating layer 9 is a layer for covering and protecting the resin layer 8. The inorganic insulating layer 9 is preferably as thin as possible so that the bent portion B does not become difficult to bend. The thickness of the inorganic insulating layer 9 is, for example, 100 nm to 400 nm.

[0059] From using Figure 4 and Figure 5 As can be seen from the structure shown, the conductive pattern 11 is provided on the inorganic insulating layer 9 except for the position above the opening 10. Figure 2 The relay electrode 111 shown is provided on the same layer, and thus can be formed of the same material as the relay electrode 111. The relay electrode 111 is provided only in the display area 2, and the conductive pattern 11 is provided only in the bent portion B. Figure 5 As shown, one end of the conductive pattern 11 formed in the bent portion B is electrically connected to one end of the first frame wiring 20 via the first interlayer film 36, the second interlayer film 37, the resin layer 8, and the contact hole 91 of the inorganic insulating layer 9 provided on one end of the first frame wiring 20. In addition, although not shown in the figure, the other end of the first frame wiring 20 is electrically connected to the end of the source line (not shown) of the display area 2 via the first interlayer film 36, the second interlayer film 37, the resin layer 8, and the contact hole 91 of the inorganic insulating layer 9 provided on the other end of the first frame wiring 20. Moreover, the source line (not shown) is electrically connected to Figure 2 The source electrode 32 of TFT3. Figure 2 As shown, the drain electrode 31 of the TFT 3 is electrically connected to the relay electrode 111 of the display area 2 via a contact hole 9 a provided in the inorganic insulating layer 9 on the drain electrode 31 and a contact hole 8 a provided in the resin layer 8 .

[0060] from Figure 4 and Figure 6 It can be seen that the plurality of conductive patterns 11 are arranged in the Y direction. For example, three openings 10 are provided at intervals along the X direction between the plurality of conductive patterns 11. However, the number of openings 10 can be any number. In addition, the position where the opening 10 is provided can also be any position. Moreover, the size and shape of each opening 10 can also be any size and shape. In addition, the shape of the outline of the opening 10 when viewed from above is not limited to Figure 4 The rectangular shape shown as an example may be any shape such as circular, elliptical, or square. That is, the opening 10 formed in the conductive pattern 11 may be of any shape as long as it allows the gas released from the resin layer 8 to pass through to the protective layer 22 .

[0061] Figure 7 yes Figure 4 VII-VII line cross-sectional view. Figure 7 It can be seen that the gas generated from the resin layer 8 can flow above the inorganic insulating layer 9 through the protective layer 22 in the opening 10. In other words, by providing a portion above the resin layer 8 where the inorganic insulating layer 9 is not disposed, a path is formed for the gas generated from the resin layer 8 to flow above the inorganic insulating layer 9. As a result, the gas generated from the resin layer 8 is less likely to accumulate between the inorganic insulating layer 9 and the resin layer 8. Consequently, it is possible to suppress delamination between the inorganic insulating layer 9 and the resin layer 8 or cracks in the inorganic insulating layer 9.

[0062] <Implementation Method 2>

[0063] Hereinafter, a second embodiment of the present disclosure will be described. The second embodiment differs from the first embodiment in the shape of the opening 10. The description of matters common to the first embodiment will be omitted as appropriate. Figure 8 1 is a schematic plan view showing the periphery of the end portion of the display area 2 and the frame area F in the display device 1 according to the second embodiment. Figure 8 For simplicity, the protective layer 22 is omitted from the illustration, and the figure is a top view from the conductive pattern 11 downward.

[0064] In addition, Figure 8 The cross-sectional structure of the conductive pattern 11 extending in the X direction is the same as that of the first embodiment. Figure 5 The cross-sectional structure shown is the same. Figure 8 In the embodiment 2, the position of the cross section of the conductive pattern 11 extending in the X direction is shown as line VV. Figure 8 VV line cross section, refer to Figure 5 .

[0065] In embodiment 2, as Figure 8As shown, the opening 10 extends along the X direction over the entire length of the bent portion B. In addition, the opening 10 extends along the conductive pattern 11. That is, the opening 10 and the conductive pattern 11 extend substantially in parallel.

[0066] from Figure 8 As can be seen, in the Y direction, the width of the inorganic insulating layer 9 is greater than the width of the conductive pattern 11 it overlaps when viewed from above. Consequently, the edge of the inorganic insulating layer 9 extends along the edge of the conductive pattern 11 when viewed from above. This reduces damage to the resin layer 8 during etching to form the conductive pattern 11.

[0067] Figure 9 yes Figure 8 The IX-IX line cross-sectional view. Figure 6 and Figure 9 Comparison shows that the area occupied by the openings 10 in Embodiment 2 is larger than that of the openings 10 in Embodiment 1. This allows the gas released from the resin layer 8 to be more efficiently guided above the inorganic insulating layer 9.

[0068] from Figure 5 and Figure 8 It can be seen that the conductive pattern 11 is provided on the inorganic insulating layer 9 except for the position above the opening 10. That is, the conductive pattern 11 is provided with the above-mentioned Figure 2 The relay electrode 111 shown is provided on the same layer, and thus can be formed of the same material as the relay electrode 111. The relay electrode 111 is provided only in the display area 2, and the conductive pattern 11 is provided only in the bent portion B. Figure 5 As shown, one end of the conductive pattern 11 formed in the bent portion B is electrically connected to one end of the first frame wiring 20 via the first interlayer film 36, the second interlayer film 37, the resin layer 8, and the contact hole 91 of the inorganic insulating layer 9 provided on one end of the first frame wiring 20. In addition, although not shown in the figure, the other end of the first frame wiring 20 is electrically connected to the end of the source line (not shown) of the display area 2 via the first interlayer film 36, the second interlayer film 37, the resin layer 8, and the contact hole 91 of the inorganic insulating layer 9 provided on the other end of the first frame wiring 20. Moreover, the source line (not shown) is electrically connected to Figure 2 The source electrode 32 of TFT3. Figure 2 As shown, the drain electrode 31 of the TFT 3 is electrically connected to the relay electrode 111 of the display area 2 via a contact hole 9 a provided in the inorganic insulating layer 9 on the drain electrode 31 and a contact hole 8 a provided in the resin layer 8 .

[0069] <Implementation Method 3>

[0070] Hereinafter, Embodiment 3 of the present disclosure will be described. This embodiment differs from Embodiments 1 and 2 in the shape of opening 10. In the description of this embodiment, description of matters common to Embodiments 1 and 2 will be appropriately omitted. Figure 10 This is a plan view showing the periphery of the end portion of the display area 2 and the frame area F in the display device 1 according to the third embodiment. Figure 11 yes Figure 10 The XI-XI line cross-section diagram. Figure 10 For simplicity, the protective layer 22 is omitted from the illustration, and the figure is a top view from the conductive pattern 11 downward.

[0071] In addition, Figure 10 The cross-sectional structure of the conductive pattern 11 extending in the X direction is the same as that of the first embodiment. Figure 5 The cross-sectional structure shown is the same. Figure 10 In the embodiment 3, the position of the cross section of the conductive pattern 11 extending in the X direction is shown as the VV line. Figure 10 VV line cross section, refer to Figure 5 .

[0072] In addition, Figure 10 The cross-sectional structure of the wiring 62 extending in the X direction is the same as that of the embodiment 2. Figure 9 The cross-sectional structure shown is the same. Figure 10 In the embodiment 3, the position of the cross section along the wiring 62 extending in the X direction is shown as line IX-IX. Figure 10 IX-IX line cross section, refer to Figure 9 .

[0073] from Figure 9 、 Figure 10 as well as Figure 11 It can be seen that the openings 10 are provided at all positions of the inorganic insulating layer 9 except for the position below the conductive pattern 11. That is, in the bent portion B, except for the position overlapping with the conductive pattern 11 when viewed from above, the openings 10 are provided at all positions except for the position below the conductive pattern 11. Figure 11 As shown, the inorganic insulating layer 9 is removed.

[0074] from Figure 10 and Figure 11 As can be seen, the width of the inorganic insulating layer 9 in the Y direction is substantially the same as the width of the conductive pattern 11 it overlaps in a plan view. This further increases the area of the opening 10, allowing the gas released from the resin layer 8 to escape more efficiently above the inorganic insulating layer 9.

[0075] from Figure 5 and Figure 10It can be seen that the conductive pattern 11 is provided on the inorganic insulating layer 9 except for the position above the opening 10. That is, the conductive pattern 11 is provided with the above-mentioned Figure 2 The relay electrode 111 shown is provided on the same layer, and thus can be formed of the same material as the relay electrode 111. The relay electrode 111 is provided only in the display area 2, and the conductive pattern 11 is provided only in the bent portion B. Figure 5 As shown, one end of the conductive pattern 11 formed in the bent portion B is electrically connected to one end of the first frame wiring 20 via the first interlayer film 36, the second interlayer film 37, the resin layer 8, and the contact hole 91 of the inorganic insulating layer 9 provided on one end of the first frame wiring 20. In addition, although not shown in the figure, the other end of the first frame wiring 20 is electrically connected to the end of the source line (not shown) of the display area 2 via the first interlayer film 36, the second interlayer film 37, the resin layer 8, and the contact hole 91 of the inorganic insulating layer 9 provided on the other end of the first frame wiring 20. Moreover, the source line (not shown) is electrically connected to Figure 2 The source electrode 32 of TFT3. Figure 2 As shown, the drain electrode 31 of the TFT 3 is electrically connected to the relay electrode 111 of the display area 2 via a contact hole 9 a provided in the inorganic insulating layer 9 on the drain electrode 31 and a contact hole 8 a provided in the resin layer 8 .

[0076] <Method for manufacturing display device of the present disclosure>

[0077] Figures 12 to 17 : is a cross-sectional view showing the structure of the first to sixth steps included in the manufacturing process of the display device 1 of the present disclosure. Figures 12 to 17 In the present invention, a method for manufacturing the structure in the bending portion B described in the above-mentioned embodiment 3 is illustrated, but the manufacturing method of the display device 1 disclosed herein can also be applied to the method for manufacturing the structure described in embodiments 1 and 2 or the method for manufacturing the structure in the display area 2 of each embodiment.

[0078] Figure 18 This is a flowchart of the first to sixth steps of the method for manufacturing the display device 1 of the present disclosure. The processes of the first step S1 to the sixth step S6 are performed in sequence. Figures 12 to 17 It shows a cross-sectional view immediately after the processing of each of the first step S1 to the sixth step S6 is performed.

[0079] In the first step S1, Figure 12 As shown, a filling layer 61 is formed on a base material 7 , and patterned wiring 62 is formed on the filling layer 61 . Then, a resin layer 8 is formed so as to cover the wiring 62 .

[0080] Next, in the second step S2, as Figure 13 As shown, an insulating layer 90 serving as the inorganic insulating layer 9 is formed on the resin layer 8. Thereafter, a conductive layer 110 serving as the conductive pattern 11 is formed on the insulating layer 90 serving as the inorganic insulating layer 9 by sputtering.

[0081] Next, in the third step S3, as shown in FIG. Figure 14 As shown in FIG, in order to pattern the conductive layer 110, a resist is applied on the conductive layer 110. The resist is patterned by a photolithography process or the like. As a result, as shown in FIG. Figure 14 As shown, a resist pattern 63 is formed.

[0082] Next, in the fourth step S4, as Figure 15 As shown in FIG. 1 , the resist pattern 63 is used as an etching mask and the conductive layer 110 is removed by etching. As a result, as shown in FIG. Figure 14 As shown, the conductive pattern 11 remains below the resist pattern 63. That is, the conductive layer 110 other than the portion covered by the resist pattern 63 is removed by etching, and the conductive pattern 11 is formed on the inorganic insulating layer 9.

[0083] Next, in the fifth step S5, as shown in FIG. Figure 16 As shown in FIG. 1 , the insulating layer 90 is etched using the resist pattern 63 as an etching mask. As a result, the inorganic insulating layer 9 remains below the resist pattern 63 and the conductive pattern 11, forming Figure 16 The structure shown. The portion of the insulating layer 90 except the portion below the resist pattern 63 after removal forms the opening 10. In the fourth embodiment, the case where the insulating layer 90 except the portion below the conductive pattern 11 is removed is exemplified. In this case, the opening 10 can be provided without adding a photolithography step.

[0084] Next, in the sixth step S6, as shown in FIG. Figure 17 As shown, the resist pattern 63 on the conductive pattern 11 is removed by ashing and resist stripping. Figure 17 With the structure shown, the gas generated from the resin layer 8 can be released upward from the opening 10 during the heat treatment.

[0085] In the manufacturing method of the display device 1 of the present disclosure, the case where the insulating layer 90 is removed except for the portion below the conductive pattern 11 is exemplified. However, in the above-mentioned embodiment, Figure 4 and Figure 8 It is understood that, for example, the opening 10 may be provided in a portion other than the portion below the conductive pattern 11 so that the inorganic insulating layer 9 remains. In this case, after the fourth step S4 is performed, Figure 15 In the structure shown, the resist pattern 63 is temporarily removed. Thereafter, a photolithography step is performed again to pattern the insulating layer 90 to provide the opening 10 .

[0086] Furthermore, in the above-described method for manufacturing the display device 1 of the present disclosure, the same manufacturing method can be applied to the display region 2 by replacing the conductive pattern 11 with the relay electrode 111 .

[0087] Description of Reference Numerals

[0088] 1 Display device

[0089] 2 Display area

[0090] 3 Thin Film Transistor (TFT)

[0091] F Border area

[0092] T terminal

[0093] B bending part

[0094] 7. Substrate

[0095] 8 Resin layer

[0096] 9 Inorganic insulation layer

[0097] 10 Opening

[0098] 11 Conductive pattern

[0099] 31 drain electrode

[0100] 32 source electrode

[0101] 63 Resist pattern.

Claims

1. A display device, characterized in that: have: a display region comprising thin film transistors; a frame area surrounding the display area; a terminal portion, which is arranged in the above-mentioned frame area; a resin layer disposed above the substrate; an inorganic insulating layer provided on the resin layer and having an opening; and a conductive pattern provided on the inorganic insulating layer at a position other than a position above the opening; Between the display area and the terminal portion are provided: The resin layer, the inorganic insulating layer, and the bent portions of the plurality of conductive patterns are provided. The conductive pattern electrically connects the terminal portion and the thin film transistor. At positions between the plurality of the conductive patterns, the plurality of openings are spaced apart from each other along the extending direction of the conductive patterns. The conductive pattern is provided only on the inorganic insulating layer in the bent portion.

2. The display device according to claim 1, wherein The opening is provided at all positions of the inorganic insulating layer except for a position below the conductive pattern.

3. The display device according to claim 1, wherein In a plan view, an edge of the inorganic insulating layer surrounds an edge of the conductive pattern.

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