Sensing device

Abstract

A sensing device includes a first substrate, a first sensing element, a light-emitting element, and a light-shielding layer. The first sensing element is located on the first substrate. The light-emitting element is located above the first sensing element. The light-shielding layer is located between the light-emitting element and the first sensing element and is electrically connected to the light-emitting element.

Description

Technical Field

[0001] The present invention relates to a photoelectric device, and in particular to a sensing device. Background Art

[0002] To provide the information necessary to build a smart living environment, various sensors are now widely used in daily life. For example, mobile phones can be equipped with sensors that can recognize fingerprints for unlocking. Because the unevenness of a fingerprint produces reflected light of varying intensities, the sensor generates varying currents by detecting the light reflected from the fingerprint, thereby distinguishing the fingerprint's shape. In other words, fingerprint sensors require a light source for sensing. However, simplifying the integrated structure of the light source and sensor remains a key area of focus for the industry. Summary of the Invention

[0003] An object of the present invention is to provide a sensing device with a simplified integrated structure.

[0004] One embodiment of the present invention provides a sensing device, comprising: a first substrate; a first sensing element located on the first substrate; a light-emitting element located on the first sensing element; and a light-shielding layer located between the light-emitting element and the first sensing element and electrically connected to the light-emitting element.

[0005] In one embodiment of the present invention, the orthographic projection of the first sensing element on the first substrate at least partially overlaps the orthographic projection of the light emitting element on the first substrate.

[0006] In one embodiment of the present invention, the light emitting element emits visible light, and the visible light includes at least two colors.

[0007] In one embodiment of the present invention, the light-emitting element emits invisible light.

[0008] In one embodiment of the present invention, the sensing device further includes a light angle control layer located between the light shielding layer and the light emitting element, and the light shielding layer and the light angle control layer are electrically connected to two pads of the light emitting element respectively.

[0009] In one embodiment of the present invention, the sensing device further includes a second sensing element located between the light shielding layer and the light emitting element.

[0010] In one embodiment of the present invention, the electrode of the second sensing element is electrically connected to the light emitting element.

[0011] In one embodiment of the present invention, the orthographic projection of the second sensing element on the first substrate at least partially overlaps the orthographic projection of the first sensing element on the first substrate.

[0012] In one embodiment of the present invention, the orthographic projection of the second sensing element on the first substrate is outside the orthographic projection of the first sensing element on the first substrate.

[0013] In one embodiment of the present invention, the aforementioned sensing device further includes a second sensing element, and the first sensing element and the second sensing element are located on different sides of the light emitting element.

[0014] In one embodiment of the present invention, the orthographic projection of the second sensing element on the first substrate is outside the orthographic projection of the light emitting element on the first substrate.

[0015] In one embodiment of the present invention, the second sensing element is an organic photodiode.

[0016] In one embodiment of the present invention, the first sensing element is a fingerprint sensing element.

[0017] The present invention has the beneficial effect of electrically connecting the light-shielding layer of the sensing element to the light-emitting element, enabling the light-shielding layer to simultaneously serve as a signal line for the light-emitting element, thereby simplifying the integrated structure of the sensing element and the light-emitting element. Furthermore, the sensing device of the present invention eliminates the need for reserved openings between the sensing elements, thereby increasing the density of the sensing element arrangement. Furthermore, the sensing device of the present invention can also simplify the integrated structure of the sensing element and the light-emitting element by enabling the light-angle control layer of the sensing element to simultaneously serve as a signal line for the light-emitting element.

[0018] In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1A FIG. 1 is a partial top view of a sensing device according to an embodiment of the present invention.

[0020] Figure 1B It is along Figure 1A Schematic cross-sectional view taken along section line AA'.

[0021] Figure 2 FIG. 1 is a partial top view of a sensing device according to an embodiment of the present invention.

[0022] Figure 3A FIG. 1 is a partial top view of a sensing device according to an embodiment of the present invention.

[0023] Figure 3B It is along Figure 3A Schematic cross-sectional view taken along section line BB'.

[0024] Figure 4 FIG. 1 is a partial cross-sectional diagram of a sensing device according to an embodiment of the present invention.

[0025] Figure 5A FIG. 1 is a partial top view of a sensing device according to an embodiment of the present invention.

[0026] Figure 5B It is along Figure 5A Schematic cross-sectional view taken along section line C-C'.

[0027] The reference numerals are as follows:

[0028] 10, 20, 30, 40, 50: Sensing device

[0029] 110: First substrate

[0030] 120, 220: First sensing element

[0031] 130, 130A, 130B, 130C, 130D: Light-emitting elements

[0032] 131: Luminous body

[0033] 132: First pad

[0034] 133: Second pad

[0035] 140: Light-shielding layer

[0036] 230, 330, 330A, 330B, 530, 530A, 530B: Light-emitting elements

[0037] 350, 450, 550: Second sensing element

[0038] 510: Second substrate

[0039] A-A', B-B', C-C': hatching

[0040] B1, B2: buffer layer

[0041] CS: Conductive Structure

[0042] CV: Cover

[0043] E11, E12, E2, E21, E22, EA, EB: electrodes

[0044] ET: electron transport layer

[0045] FG: finger

[0046] HT: hole transport layer

[0047] I1~I9:Insulation layer

[0048] LA: Light Angle Control Layer

[0049] LR1: Visible light

[0050] LR2: Invisible light

[0051] O1, O2, O3, OP1, OP2, OP3: Open

[0052] P1~P7: Flat layer

[0053] PT: Photosensitive layer

[0054] SL, SL2: signal line

[0055] SR1, SR2: Sensing layer

[0056] T1: switching element

[0057] VA: Through-hole

[0058] W1, W2, W3: side walls DETAILED DESCRIPTION

[0059] In the accompanying drawings, for the sake of clarity, the thickness of layers, films, panels, regions, etc. is magnified. Throughout the specification, the same reference numerals represent the same elements. It should be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to another element, or an intermediate element can also exist. On the contrary, when an element is referred to as being "directly on" or "directly connected to" another element, there is no intermediate element. As used herein, "connection" can refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" can be the presence of other elements between two elements.

[0060] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Thus, a first "element," "component," "region," "layer," or "portion" discussed below may be referred to as a second element, component, region, layer, or portion without departing from the teachings herein.

[0061] The terms used herein are for the purpose of describing specific embodiments only and are not restrictive. As used herein, unless the content clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms, including "at least one" or to represent "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. It should also be understood that when used in this specification, the terms "comprising" and / or "including" specify the presence of the features, regions, wholes, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and / or combinations thereof.

[0062] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown in the figures. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is turned over, the element described as being on the "lower" side of the other elements will be oriented on the "upper" side of the other elements. Thus, the exemplary term "lower" can include both "lower" and "upper" orientations, depending on the particular orientation of the figure. Similarly, if the device in one figure is turned over, the element described as being "lower" or "below" the other elements will be oriented as being "above" the other elements. Thus, the exemplary terms "lower" or "below" can include both "lower" and "upper" orientations.

[0063] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present invention, and will not be interpreted as idealized or overly formal unless explicitly defined as such herein.

[0064] Exemplary embodiments are described herein with reference to cross-sectional views that are schematic representations of idealized embodiments. Thus, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and / or tolerances, are to be expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions as shown herein, but rather include deviations in shape that result, for example, from manufacturing. For example, a region shown or described as flat may typically have rough and / or nonlinear features. Furthermore, sharp angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shape of the regions and are not intended to limit the scope of the claims.

[0065] Figure 1A FIG. 1 is a partial top view of a sensing device 10 according to an embodiment of the present invention. Figure 1B It is along Figure 1A In order to make the expression of the accompanying drawings more concise, Figure 1A The first substrate 110 , the sensing element 120 and the light emitting element 130 are schematically shown, and other components and film layers are omitted.

[0066] Please refer to Figure 1A to Figure 1B The sensing device 10 includes: a first substrate 110; a first sensing element 120 located on the first substrate 110; a light-emitting element 130 located on the first sensing element 120; and a light-shielding layer 140 located between the light-emitting element 130 and the first sensing element 120 and electrically connected to the light-emitting element 130.

[0067] In the sensing device 10 of one embodiment of the present invention, by making the light shielding layer 140 of the first sensing element 120 also serve as a signal line for the light emitting element 130, the sensing device 10 can have a simplified integrated structure. Figure 1A to Figure 1B , the implementation of each component of the sensing device 10 is further described, but the present invention is not limited thereto.

[0068] In this embodiment, the first substrate 110 can be a transparent substrate or an opaque substrate, and its material can be, but is not limited to, a ceramic substrate, a quartz substrate, a glass substrate, a polymer substrate, or other suitable materials. Various layers for forming the first sensing element 120, the light-emitting element 130, the light-shielding layer 140, and other signal lines, switching elements, storage capacitors, etc. can be disposed on the first substrate 110.

[0069] In this embodiment, the first sensing element 120 may be a visible light sensing element, such as, but not limited to, a fingerprint sensing element that senses visible light. For example, the first sensing element 120 may include an electrode E11, a sensing layer SR1, and an electrode E12. The electrode E11 may be located between the first substrate 110 and the sensing layer SR1, and the sensing layer SR1 may be located between the electrode E11 and the electrode E12. In some embodiments, the first sensing element 120 may be a non-visible light sensing element, such as a fingerprint sensing element that senses infrared (IR) light.

[0070] For example, the material of electrode E11 can be molybdenum, aluminum, titanium, copper, gold, silver, or other conductive materials, or alloy combinations or stacks of two or more of the above materials. The material of sensing layer SR1 can be silicon-rich oxide (SRO), germanium-doped silicon-rich oxide, or other suitable materials. The material of electrode E12 is preferably a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or other suitable oxides, or a stack of at least two of the above.

[0071] In some embodiments, the sensing device 10 may further include a planar layer P1, and the planar layer P1 may be disposed between the electrode E11 of the first sensing element 120 and between the sensing layer SR1 and the electrode E12. The planar layer P1 may be made of an organic material, such as acrylic, siloxane, polyimide, epoxy, or a stack of these materials, but is not limited thereto. The planar layer described below may also be made of the same or similar material as the planar layer P1.

[0072] In some embodiments, the sensing device 10 may further include a switching element T1 located between the first sensing element 120 and the first substrate 110. The switching element T1 may electrically connect the electrode E11 of the first sensing element 120 and the signal line SL. When the switching element T1 is turned on, a signal from the signal line SL may be transmitted to the electrode E11 of the first sensing element 120. In some embodiments, the sensing device 10 may further include a buffer layer B1 disposed between the switching element T1 and the first substrate 110 to prevent impurities in the first substrate 110 from migrating into the switching element T1.

[0073] In some embodiments, the sensing device 10 may further include insulating layers I1 and I2. The insulating layers I1 and I2 may be disposed between the switch element T1 and the electrode E11 of the first sensing element 120, and between the switch element T1 and the signal line SL, to avoid unnecessary electrical connections. The insulating layers I1 and I2 may be made of a transparent insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, a stack of the above materials, or other suitable materials. The insulating layers described later may also have the same or similar materials as the insulating layers I1 and I2. In some embodiments, the sensing device 10 may further include a driving circuit disposed between the first sensing element 120 and the first substrate 110, such as a driving element, a power line, a driving signal line, a timing signal line, a detection signal line, and the like.

[0074] In this embodiment, the light shielding layer 140 can be disposed on the first sensing element 120. The light shielding layer 140 has an opening O1, and the orthographic projection of the opening O1 on the first substrate 110 can completely overlap the orthographic projection of the sensing layer SR1 on the first substrate 110, thereby regulating the light receiving range and light receiving amount of the sensing layer SR1. The material of the light shielding layer 140 may include metal, metal oxide, metal oxynitride, black resin or graphite, or a stack of the above materials, but is not limited thereto. In some embodiments, the sensing device 10 may further include an insulating layer I3, which may be disposed between the electrode E12 of the first sensing element 120 and the light shielding layer 140 to avoid unnecessary electrical connection.

[0075] In some embodiments, the sensing device 10 may further include a light angle control layer LA, a flat layer P2, and an insulating layer I4, wherein the light angle control layer LA is located on the light shielding layer 140, the flat layer P2 and the insulating layer I4 may be disposed between the light shielding layer 140 and the light angle control layer LA, and the orthographic projection of the sensing layer SR1 of the first sensing element 120 on the first substrate 110 may completely overlap the orthographic projection of the light angle control layer LA on the first substrate 110, or at least the opening O1 of the light shielding layer 140 may overlap the orthographic projection of the light angle control layer LA on the first substrate 110. The orthographic projection of finger FG completely overlaps the orthographic projection of light angle control layer LA on first substrate 110, and light angle control layer LA can also extend along sidewall W1 of insulating layer I4 toward first sensing element 120, so that light angle control layer LA can block light from directly above and to the upper left of first sensing element 120. Light reflected by finger FG can only enter sensing layer SR1 of first sensing element 120 through flat layer P2 between light angle control layer LA and light shielding layer 140 and lateral light-transmitting opening OP1 in insulating layer I4. In this way, only light at large oblique angles can enter sensing layer SR1 through openings OP1 and O1. Experiments have confirmed that this design can effectively improve the sensing effect of first sensing element 120.

[0076] The light-emitting element 130 may include a light-emitting body 131, a first pad 132, and a second pad 133. In this embodiment, the first pad 132 and the second pad 133 of the light-emitting element 130 are disposed on the same side of the light-emitting body 131. For example, the light-emitting element 130 may be a horizontal micro-LED, but is not limited thereto. In some embodiments, the light-emitting element 130 may be a vertical micro-LED. The light-emitting element 130 may be fabricated on a growth substrate and then transferred to the first substrate 110 via a mass transfer process. The first pad 132 may serve as or be electrically connected to the anode of the light-emitting element 130, and the second pad 133 may serve as or be electrically connected to the cathode of the light-emitting element 130. The light-emitting body 131 may, for example, include a stack of doped and undoped semiconductor materials. The first pad 132 and the second pad 133 may be made of, for example, a metal material, an alloy, a metal nitride, a metal oxide, a metal oxynitride, a stack of these materials, or other suitable materials.

[0077] In this embodiment, the light shielding layer 140 can be electrically connected to the first pads 132 of the light emitting element 130. Thus, the light shielding layer 140 can also serve as a signal line for transmitting signals to the light emitting element 130, thereby simplifying the integrated structure of the first sensing element 120 and the light emitting element 130 in the sensing device 10. Furthermore, because the light emitting element 130, serving as the light source, is disposed above the first sensing element 120, no openings are required between the first sensing elements 120 to provide the light path for the light emitting element 130. This can increase the density of the first sensing elements 120.

[0078] In some embodiments, the light angle control layer LA can also be electrically connected to the second pad 133 of the light emitting element 130. In this way, the light angle control layer LA can also serve as a signal line for the light emitting element 130, thereby simplifying the integrated structure of the first sensing element 120 and the light emitting element 130. For example, in these embodiments, the sensing device 10 can further include electrodes EA, EB, a planar layer P3, and an insulating layer I5, wherein the planar layer P3 and the insulating layer I5 can be located between the electrode EB and the light angle control layer LA, the electrode EA can be electrically connected to the first pad 132 of the light emitting element 130 and the light shielding layer 140, and the electrode EB can be electrically connected to the second pad 133 of the light emitting element 130 and the light angle control layer LA, but the present invention is not limited thereto. In other embodiments, the electrode EA can be electrically connected to the first pad 132 and the light angle control layer LA, and the electrode EB can be electrically connected to the second pad 133 and the light shielding layer 140.

[0079] For example, the light angle control layer LA can be made of molybdenum, aluminum, titanium, copper, gold, silver, or other conductive materials, or alloys or stacks of two or more of these materials. The electrodes EA and EB can be made of transparent conductive materials such as, but not limited to, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or other suitable oxides, or stacks of at least two of these materials.

[0080] In some embodiments, the first pads 132 of different light-emitting elements 130 can be electrically connected to different light-shielding layers 140. These light-shielding layers 140 can also be electrically connected to the system voltage via different switching elements. This allows for individual control over whether the first pads 132 of different light-emitting elements 130 receive signals or control over their voltage levels. Furthermore, the light-angle control layer LA to which the second pads 133 of the multiple light-emitting elements 130 are electrically connected can be electrically connected to each other or have the same voltage level. In other words, the light-angle control layer LA can also serve as a common electrode for the sensing device 10.

[0081] In this embodiment, the orthographic projection of the sensing layer SR1 of the first sensing element 120 on the first substrate 110 can completely overlap the orthographic projection of the light-emitting element 130 on the first substrate 110. In this way, the footprint of the first sensing element 120 and the light-emitting element 130 on the first substrate 110, i.e., the orthographic projection area of the first sensing element 120 and the light-emitting element 130 on the first substrate 110, can be significantly reduced, allowing a greater number of sensing elements and light-emitting elements to be disposed on the first substrate 110.

[0082] Please refer to Figure 1A In some embodiments, the stacked structure of the first sensing element 120 and the light-emitting element 130 can be arranged in an array on the first substrate 110, and the light-emitting elements 130 can all emit visible light. For example, the light-emitting element 130 can include light-emitting elements 130A, 130B, 130C, and 130D, and the light colors of the light-emitting elements 130A, 130B, 130C, and 130D can be different. For example, the light-emitting element 130A can emit red light, the light-emitting element 130B can emit green light, the light-emitting element 130C can emit blue light, and the light-emitting element 130D can emit white light. In this way, the light-emitting elements 130A, 130B, 130C, and 130D can also respectively constitute sub-pixels of the display panel, so that the sensing device 10 can also provide image display function. In some embodiments, light-emitting elements 130A, 130B, and 130C may emit blue light, while light-emitting element 130D may emit white light. Furthermore, any two of light-emitting elements 130A, 130B, and 130C may convert blue light into red and green light, respectively, using color conversion layers. In other words, the visible light emitted by light-emitting elements 130A, 130B, 130C, and 130D may include only two colors.

[0083] Please also refer to Figure 1B The sensing device 10 may further include a cover plate CV and a planar layer P4. The cover plate CV may be disposed on the light-emitting element 130, and the planar layer P4 may be located between the cover plate CV and the insulating layer 15. When a finger FG approaches the cover plate CV, light from the right side of the light-emitting element 130A (e.g., light emitted by the light-emitting element 130B) may be reflected by the finger FG to the first sensing element 120 below the light-emitting element 130A.

[0084] Below, use Figures 2 to 5B Continue to describe other embodiments of the present invention, and continue to use Figure 1A to Figure 1B The component numbers and related contents of the embodiments are the same, wherein the same number is used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, please refer to Figure 1A to Figure 1B The embodiments will not be repeated in the following description.

[0085] Figure 2 FIG2 is a schematic partial top view of a sensing device 20 according to an embodiment of the present invention. In this embodiment, the sensing device 20 may include a first substrate 110, a first sensing element 220, and a light-emitting element 230. The stacked structure of the first sensing element 220 and the light-emitting element 230 may be arranged in an array on the first substrate 110.

[0086] Like Figure 1A to Figure 1B Compared to the sensing device 10 shown, Figure 2 The difference between the illustrated sensing device 20 and the illustrated sensing device 20 is that the light emitting element 230 of the sensing device 20 emits invisible light, such as infrared light, and the first sensing element 220 is an invisible light sensing element, such as an infrared light sensing element. For example, the first sensing element 220 may be a fingerprint sensor capable of sensing infrared light, but is not limited thereto. In some embodiments, the first sensing element 220 may be an organic photodiode.

[0087] Figure 3A FIG. 1 is a partial top view of a sensing device 30 according to an embodiment of the present invention. Figure 3B It is along Figure 3A In this embodiment, the sensing device 30 may include: a first substrate 110, a first sensing element 120, a light-emitting element 330, a light-shielding layer 140, a light-angle control layer LA, a switching element T1, electrodes EA and EB, a signal line SL, planar layers P1-P4, insulating layers I1-I5, a buffer layer B1, and a cover CV.

[0088] Like Figure 1A to Figure 1B Compared to the sensing device 10 shown, Figures 3A to 3B The difference between the sensing device 30 shown is that the light emitting element 330 of the sensing device 30 can include light emitting elements 330A and 330B, wherein light emitting element 330A can emit visible light and light emitting element 330B can emit invisible light. In addition, the sensing device 30 can also include a second sensing element 350, and the second sensing element 350 can partially or completely overlap the first sensing element 120.

[0089] In this embodiment, the arrangement of the light emitting elements 330A and 330B is not particularly limited, and the arrangement of the light emitting elements 330A and 330B can be determined based on the amount of light required by the first sensing element 120 and the second sensing element 350. For example, please refer to Figure 3AWhen designing to perform live anti-counterfeiting through the fifth column of the sensing device 30, a whole row of light-emitting elements 330B can be set in the fifth column to increase the amount of invisible light. The light-emitting elements 330B can, for example, emit infrared light. At the same time, the second sensing elements 350 can be designed to be invisible light sensing elements, such as infrared light sensing elements, so that the second sensing elements 350 in the fifth column are combined with the light-emitting elements 330B to mainly extract vein images, thereby achieving live anti-counterfeiting.

[0090] In this embodiment, the second sensing element 350 can be located between the light-shielding layer 140 and the light-emitting element 330. The second sensing element 350 can include a light-angle control layer LA, a sensing layer SR2, and an electrode E2. The light-angle control layer LA can serve as one electrode of the second sensing element 350. The sensing layer SR2 can be located between the light-angle control layer LA and another electrode E2 and within the opening O2 of the insulating layer 16. The second pad 133 of the light-emitting element 330 can be electrically connected to the electrode E2 via the electrode EB. The electrode E2 can also serve as a common electrode for the sensing device 30.

[0091] In this embodiment, the orthographic projection of the sensing layer SR2 of the second sensing element 350 on the first substrate 110 may partially overlap the orthographic projection of the sensing layer SR1 of the first sensing element 120 on the first substrate 110, but the present invention is not limited thereto. In some embodiments, the orthographic projection of the sensing layer SR2 of the second sensing element 350 on the first substrate 110 may completely overlap the orthographic projection of the sensing layer SR1 of the first sensing element 120 on the first substrate 110.

[0092] In this embodiment, because the sidewall W2 of electrode EB extends toward the second sensing element 350 and is electrically connected to electrode E2, electrode EB can also block light from directly above and to the upper left of sensing layer SR2 of second sensing element 350. Light reflected by finger FG can only enter sensing layer SR2 through lateral light-transmitting opening OP2 in planar layer P3 and insulating layer I5 between electrode EB and electrode E2. In other words, electrode EB also functions as a light angle control layer for second sensing element 350, ensuring that only light at large oblique angles can enter sensing layer SR2 through opening OP2.

[0093] In this embodiment, the sensing layer SR2 can be made of germanium-doped silicon-rich oxide or other suitable materials. Electrodes E2 and EA are preferably made of a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or other suitable oxides, or a stack of at least two of these. Electrode EB can be made of molybdenum, aluminum, titanium, copper, gold, silver, or other conductive materials, or alloys or stacks of two or more of these materials.

[0094] Figure 4FIG4 is a partial cross-sectional diagram of a sensing device 40 according to an embodiment of the present invention. In this embodiment, the sensing device 40 may include: a first substrate 110, a first sensing element 120, a light-emitting element 130, a light-shielding layer 140, a switching element T1, electrodes EA and EB, a signal line SL, a planarization layer P1, P4-P5, insulating layers I1-I3 and I5, a buffer layer B1, and a cover CV.

[0095] Like Figure 1A to Figure 1B Compared to the sensing device 10 shown, Figure 4 The differences of the sensing device 40 shown are as follows: the sensing device 40 does not require a light angle control layer LA; the electrodes EA, EB, and the first and second pads 132, 133 of the light-emitting element 130 are arranged at different positions relative to the first sensing element 120; the orthographic projection of the sensing layer SR1 of the first sensing element 120 on the first substrate 110 partially overlaps the orthographic projection of the light-emitting element 130 on the first substrate 110; and the sensing device 40 further includes a second sensing element 450, which does not overlap the first sensing element 120.

[0096] For example, in this embodiment, the planar layer P5 of the sensing device 40 can replace the light angle control layer LA, planar layers P2 and P3, and insulating layer I4 of the sensing device 10, and the planar layer P5 can be disposed between the insulating layer I5 and the light shielding layer 140. Furthermore, the positions of the electrodes EA and EB relative to the first sensing element 120 can be interchanged, and the positions of the first pad 132 and the second pad 133 relative to the first sensing element 120 can be interchanged. Furthermore, the electrode EA can be electrically connected to the light shielding layer 140 via the conductive structure CS in the through-hole VA of the insulating layer I5, allowing the first pad 132 of the light-emitting element 130 to be electrically connected to the light shielding layer 140 via the electrode EA and the conductive structure CS. In some embodiments, the light shielding layer 140 can also be electrically connected to the system voltage. In other words, the light shielding layer 140 can also serve as a power line for the sensing device 40, allowing the first pad 132 of the light-emitting element 130 to have a voltage level controlled by the system voltage.

[0097] In this embodiment, the orthographic projection of the sensing layer SR1 of the first sensing element 120 on the first substrate 110 can completely overlap the orthographic projection of the electrode EA on the first substrate 110. Furthermore, the electrode EA can extend along the sidewall W3 of the insulating layer I5 toward the first sensing element 120, allowing the electrode EA to block light from directly above and to the upper left of the first sensing element 120. Light reflected by the finger FG can only enter the first sensing element 120 through the planar layer P5 between the electrode EA and the light-shielding layer 140 and the lateral light-transmitting opening OP3 in the insulating layer I5. In other words, the electrode EA can also serve as a light angle control layer for the first sensing element 120, ensuring that only light at large oblique angles can enter the sensing layer SR1 of the first sensing element 120 through the openings OP3 and O1.

[0098] In this embodiment, the second sensing element 450 may include a light shielding layer 140, a sensing layer SR2, and an electrode EB. The sensing layer SR2 is located between the light shielding layer 140 and the electrode EB, and the light shielding layer 140 and the electrode EB may serve as the two electrodes of the second sensing element 450. The electrode EB of the second sensing element 450 is electrically connected to the second pad 133 of the light-emitting element 130. In some embodiments, the electrode EB may also be electrically connected to a common electrode of the sensing device 40. In this embodiment, the orthographic projection of the sensing layer SR2 of the second sensing element 450 on the first substrate 110 may be outside the orthographic projection of the sensing layer SR1 of the first sensing element 120 or the light-emitting element 130 on the first substrate 110. In other words, the sensing layer SR2 of the second sensing element 450 may not overlap the sensing layer SR1 of the first sensing element 120 or the light-emitting element 130. This allows the second sensing element 450 to sense light originating directly above it, for example.

[0099] In this embodiment, the material of the electrode EA is preferably molybdenum, aluminum, titanium, copper, gold, silver or other conductive materials, or an alloy combination or stack of two or more of the above materials, and the material of the electrode EB is preferably a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxides, or a stacked layer of at least two of the above.

[0100] Figure 5A FIG. 5 is a partial top view of a sensing device 50 according to an embodiment of the present invention. Figure 5B It is along Figure 5A In this embodiment, the sensing device 50 may include: a first substrate 110, a first sensing element 120, a light-emitting element 530, a light-shielding layer 140, a light-angle control layer LA, a switching element T1, electrodes EA and EB, planarization layers P1-P4, insulating layers I1-I5, and a buffer layer B1.

[0101] Like Figure 1A to Figure 1B Compared to the sensing device 10 shown, Figures 5A to 5B The difference of the sensing device 50 shown is that the sensing device 50 further includes a second substrate 510 and a second sensing element 550, wherein the second substrate 510 is located on the light-emitting element 530, and the second sensing element 550 is disposed on the second substrate 510. The first sensing element 120, the light-emitting element 530, and the second sensing element 550 are located between the first substrate 110 and the second substrate 510, and the first sensing element 120 and the second sensing element 550 can be located on different sides or opposite sides of the light-emitting element 530, respectively.

[0102] In this embodiment, the second sensing element 550 can be located between the second substrate 510 and the light-emitting element 530. By pairing the first substrate 110 provided with the first sensing element 120 and the light-emitting element 530 with the second substrate 510 provided with the second sensing element 550, the sensing device 50 can be completed. In this way, the dual-substrate design of the sensing device 50 can help improve the reliability of the sensing element and the light-emitting element.

[0103] In this embodiment, the second sensing element 550 can be an invisible light sensing element, such as an organic photodiode (OPD), for sensing blood oxygen concentration or heartbeat, or extracting vein images for live anti-counterfeiting, or for extracting fingerprint images. For example, the second sensing element 550 may include an electrode E21, a hole transport layer HT, a photosensitive layer PT, an electron transport layer ET, and an electrode E22, wherein the electron transport layer ET, the photosensitive layer PT, and the hole transport layer HT are located between the electrode E21 and the electrode E22, and the electron transport layer ET can be located between the photosensitive layer PT and the second substrate 510, but is not limited thereto. In some embodiments, the hole transport layer HT can be located between the photosensitive layer PT and the second substrate 510. In addition, in some embodiments, the first sensing element 120 and the second sensing element 550 can both be invisible light sensing elements, and the sensing wavelength ranges of the first sensing element 120 and the second sensing element 550 can be different.

[0104] For example, the electrode E21 may be an opaque conductive material, such as a silver layer or an aluminum layer. The hole transport layer HT may include PEDOT:PSS (poly(3,4-ethylene-dioxythiophene:polystyrene sulfonate)) or a high-work-function metal oxide, such as MoO3. The photosensitive layer PT may include a photosensitive polymer that absorbs in the infrared and / or near-infrared (NIR) regions, such as P3HT:PCBM (poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methylester) or PDPP3T-PCBM (poly-(diketopyrrole-terthiophene):[6,6]-phenyl-C61-butyric acid methyl ester). The electron transport layer ET may include zinc oxide (ZnO) or aluminum zinc oxide (AZO), and the electrode E22 may be made of a transparent conductive material, such as indium tin oxide (ITO).

[0105] In some embodiments, the sensing device 50 may further include planar layers P6, P7 and an insulating layer I9, wherein the hole transport layer HT may be located in the opening O3 of the insulating layer I9, the planar layer P6 may be located between the hole transport layer HT and the insulating layer I9 and the second substrate 510, and the planar layer P7 may be located between the electrode E21 and the insulating layer I9 and the light-emitting element 530.

[0106] In some embodiments, the sensing device 50 may further include a signal line SL2 positioned between the second sensing element 550 and the second substrate 510. The signal line SL2 may be electrically connected to the electrode E22 of the second sensing element 550 and may comprise, for example, a metal material having a low resistance. When the electrode E22, comprising a transparent conductive material, has a high resistance, the signal line SL2 helps improve the signal transmission rate to the electrode E22. In some embodiments, the sensing device 50 may further include a buffer layer B2, which may be disposed between the signal line SL2 and the second substrate 510. In some embodiments, the sensing device 50 may further include insulating layers I7 and I8, which may be disposed between the signal line SL2 and the electrode E22 of the second sensing element 550 to avoid unnecessary electrical connections. In some embodiments, the sensing device 50 may further include a driving circuit, such as a driving element, a power line, a driving signal line, a timing signal line, a detection signal line, etc., disposed between the second sensing element 550 and the second substrate 510.

[0107] In this embodiment, the light-emitting element 530 of the sensing device 50 may include light-emitting elements 530A and 530B, wherein the light-emitting element 530A may emit visible light and the light-emitting element 530B may emit invisible light, but the present invention is not limited thereto. In some embodiments, the light-emitting elements 530A and 530B may emit visible light of different colors, such as red, green, blue, or white light.

[0108] In this embodiment, the arrangement of the light emitting elements 530A and 530B is not particularly limited, and the arrangement of the light emitting elements 530A and 530B can be determined based on the amount of light required by the first sensing element 120 and the second sensing element 550. For example, please refer to Figure 5A , the light emitting elements 530A and 530B located in the third column of the sensing device 50 can be arranged alternately. In addition, no light emitting element 530A emitting visible light may be provided on some of the first sensing elements 120 in the fifth column of the sensing device 50. In some embodiments, the second sensing element 550 can be provided at a desired location as needed, for example, only in the third column of the sensing device 50, and the orthographic projection of the second sensing element 550 on the first substrate 110 can be outside the orthographic projection of the light emitting elements 530A and 530B on the first substrate 110. In this way, please refer to Figure 5B When a user touches the second glass substrate 510 with their finger FG to perform sensing such as fingerprint, vein image, blood oxygen concentration, heartbeat, etc., the visible light LR1 emitted by the light-emitting element 530A can be reflected by the finger FG to the first sensing element 120 below the light-emitting element 530B, and the invisible light LR2 emitted by the light-emitting element 530B can be reflected by the finger FG to the second sensing element 550, so that the second sensing element 550 can cooperate with the light-emitting element 530B to provide local functions such as fingerprint recognition, live anti-counterfeiting or blood oxygen concentration sensing.

[0109] In summary, the sensing device of the present invention electrically connects the light-shielding layer of the sensing element to the light-emitting element, allowing the light-shielding layer to simultaneously serve as a signal line for the light-emitting element, thereby simplifying the integrated structure of the sensing element and the light-emitting element. Furthermore, the sensing device of the present invention eliminates the need for reserved openings between the sensing elements, thereby increasing the density of the sensing element arrangement. Furthermore, the sensing device of the present invention can also simplify the integrated structure of the sensing element and the light-emitting element by enabling the light-angle control layer of the sensing element to simultaneously serve as a signal line for the light-emitting element.

[0110] Although the present invention has been disclosed above with reference to the embodiments, they are not intended to limit the present invention. Those skilled in the art may make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A sensing device comprising: a first substrate; a first sensing element, located on the first substrate; a light emitting element, located on the first sensing element; as well as a light shielding layer, located between the light emitting element and the first sensing element, and electrically connected to the light emitting element; The light angle control layer is located between the light shielding layer and the light emitting element, and the light angle control layer is electrically connected to the light emitting element. 2 . The sensing device as claimed in claim 1 , wherein an orthographic projection of the first sensing element on the first substrate at least partially overlaps an orthographic projection of the light emitting element on the first substrate. 3 . The sensing device as claimed in claim 1 , wherein the light emitting element emits visible light, and the visible light includes at least two colors of light. The sensing device according to claim 1 , wherein the light emitting element emits invisible light. 5 . The sensing device as claimed in claim 1 , wherein the light shielding layer and the light angle control layer are electrically connected to two pads of the light emitting element respectively. 6 . The sensing device as claimed in claim 1 , further comprising a second sensing element located between the light shielding layer and the light emitting element. 7 . The sensing device as claimed in claim 6 , wherein an electrode of the second sensing element is electrically connected to the light emitting element. 8 . The sensing device as claimed in claim 6 , wherein an orthographic projection of the second sensing element on the first substrate at least partially overlaps an orthographic projection of the first sensing element on the first substrate. 9 . The sensing device as claimed in claim 6 , wherein an orthographic projection of the second sensing element on the first substrate is outside an orthographic projection of the first sensing element on the first substrate. 10 . The sensing device as claimed in claim 1 , further comprising a second sensing element, wherein the first sensing element and the second sensing element are located on different sides of the light emitting element. 11 . The sensing device as claimed in claim 10 , wherein an orthographic projection of the second sensing element on the first substrate is outside an orthographic projection of the light emitting element on the first substrate. The sensing device as claimed in claim 10 , wherein the second sensing element is an organic photodiode.

13. The sensing device as claimed in claim 1, wherein the first sensing element is a fingerprint sensing element.

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