An anti-noise radiation detection circuit and an anti-noise radiation detection method

Abstract

The present invention relates to the field of nuclear radiation detection, and particularly to an anti-noise radiation detection circuit and an anti-noise radiation detection method. It includes a semiconductor detector module, a current pulse generation module, a preamplification module, a pole-zero cancellation module, and a filter shaping module. The output ends of the semiconductor detector module and the current pulse generation module are both connected to the input end of the preamplification module, the output end of the preamplification module is connected to the input end of the pole-zero cancellation module, and the input end of the filter shaping module is connected to the output end of the pole-zero cancellation module. By means of the semiconductor detector module and the current pulse generation module, when the detector signal input and the pulse signal input are carried out respectively, the mutual shunt influence between them can be ignored. Through two consecutive detection tests and data processing using formulas, the noise of the detector and the noise of the preamplifier can be effectively filtered, thereby improving the signal-to-noise ratio of the test signal.

Description

Technical Field

[0001] The present invention relates to the field of nuclear radiation detection, and in particular to an anti-noise radiation detection circuit and an anti-noise radiation detection method. Background Art

[0002] In a nuclear radiation detection system, since the output signal amplitude of a semiconductor detector is small, it is often affected by the leakage current and distributed capacitance of the detector, as well as the input leakage current and feedback resistor thermal noise of the preamplifier circuit, resulting in excessive noise interference in the output signal and a low signal-to-noise ratio.

[0003] In order to improve the detection signal-to-noise ratio, most of the current effective methods basically involve the detector and the preamplifier circuit. For the detector, those with a smaller leakage current and a lower distributed capacitance are selected. For the preamplifier circuit, those with a lower input current noise and a high voltage gain are usually selected. Considering the high requirements for manufacturing processes and circuit design of high-performance detectors and preamplifier circuits, the production cost is too high. Summary of the Invention

[0004] The present invention provides an anti-noise radiation detection circuit and an anti-noise radiation detection method, which solve at least one technical problem existing in the prior art.

[0005] One technical solution of the present invention provides an anti-noise radiation detection circuit, including a semiconductor detector module, a current pulse generation module, a preamplification module, a pole-zero cancellation module, and a filtering and shaping module;

[0006] The output ends of the semiconductor detector module and the current pulse generation module are both connected to the input end of the preamplification module, the output end of the preamplification module is connected to the input end of the pole-zero cancellation module, and the input end of the filtering and shaping module is connected to the output end of the pole-zero cancellation module;

[0007] The semiconductor detector module can detect a radiation source and output a radiation detection signal;

[0008] The current pulse generation module can generate a current pulse signal to simulate the signal generated by the semiconductor detector module;

[0009] The preamplification module can perform a first amplification on the radiation detection signal or the current pulse signal;

[0010] The pole-zero cancellation module can perform baseline recovery on the amplified radiation detection signal or current pulse signal;

[0011] The filtering and shaping circuit can perform a second amplification and filtering on the radiation detection signal or the current pulse signal after baseline recovery.

[0012] Further, the semiconductor detector module includes a current-limiting resistor and a detector. One end of the detector is connected to one end of the current-limiting resistor, the other end of the detector is connected to the signal ground, and the other end of the current-limiting resistor is connected to a high voltage.

[0013] Further, the current pulse generation module includes a first voltage-dividing resistor, a second voltage-dividing resistor, and a precision resistor. One end of the first voltage-dividing resistor is connected to one end of the second voltage-dividing resistor, the other end of the first voltage-dividing resistor is connected to a signal generator, the other end of the second voltage-dividing resistor is connected to the signal ground, one end of the precision resistor is connected to one end of the second voltage-dividing resistor, and the other end of the precision resistor is connected to the pre-amplification module.

[0014] Further, the pre-amplification module includes a first amplifier, a discharging resistor, and an integrating capacitor. The negative input terminal of the first amplifier is respectively connected to one end of the discharging resistor and one end of the integrating capacitor, the other ends of the discharging resistor and the integrating capacitor are both connected to the output terminal of the first amplifier, and the positive input terminal of the first amplifier is connected to the signal ground.

[0015] Further, the pole-zero cancellation module includes a first resistor and a first capacitor. One end of the first resistor is connected to one end of the first capacitor, the other end of the first resistor is connected to the other end of the first capacitor, one end of the first capacitor is connected to the output terminal of the pre-amplification module, and the other end of the first capacitor is connected to the input terminal of the filter shaping circuit.

[0016] Further, the filter shaping module includes a second amplifier, a third amplifier, a second resistor, a third resistor, a second capacitor, a fourth resistor, and a fifth resistor. The positive input terminal of the second amplifier is connected to one end of the third resistor, the negative input terminal of the second amplifier is respectively connected to one end of the second resistor and one end of the second capacitor, the other ends of the second resistor and the second capacitor are both connected to the output terminal of the second amplifier, the positive input terminal of the third amplifier is connected to the output terminal of the second amplifier, the negative input terminal of the third amplifier is respectively connected to one end of the fourth resistor and one end of the fifth resistor, the other end of the fourth resistor is connected to the signal ground, and the other end of the fifth resistor is connected to the output terminal of the third amplifier.

[0017] Further, the first amplifier, the second amplifier, and the third amplifier all adopt AD8066 chips.

[0018] Another technical solution of the present invention provides a noise-resistant radiation detection method, which is applied to any one of the above-mentioned noise-resistant radiation detection circuits, and includes:

[0019] S10: Detect a known radiation source using an anti-noise radiation detection circuit, and obtain a first output voltage output by the anti-noise radiation detection circuit;

[0020] S20: Remove the known radiation source, adjust the signal generator so that the second output voltage output by the anti-noise radiation detection circuit is equal to the first output voltage, and obtain a first effective voltage output by the signal generator;

[0021] S30: Detect a radiation source to be measured using the anti-noise radiation detection circuit, and obtain a third output voltage output by the anti-noise radiation detection circuit;

[0022] S40: Remove the radiation source to be measured, adjust the signal generator so that the fourth output voltage output by the anti-noise radiation detection circuit is equal to the third output voltage, and obtain a second effective voltage output by the signal generator;

[0023] S50: Obtain the energy loss of the radiation source to be measured according to the first effective voltage, the second effective voltage, and the energy loss of the known radiation source.

[0024] Further, step S50 further includes: obtaining the energy loss of the radiation source to be measured according to the first effective voltage, the second effective voltage, and the energy loss of the known radiation source by using a formula, and the formula is:

[0025]

[0026] where, E i1 is the energy loss of the known radiation source, E i2 is the energy loss of the radiation source to be measured, A is the amplification gain between the preamplification module and the filter shaping module, C f is the integration capacitor of the preamplification module, w e is the average ionization energy required to generate electron-hole pairs, e - is the electric charge of an electron, R4 is a precision resistor, R2 is a first voltage dividing resistor, R3 is a second voltage dividing resistor, t w is the voltage pulse width of the signal generator, V test1 is the first effective voltage, V test2 is the second effective voltage.

[0027] Advantages of the present invention: Through the semiconductor detector module and the current pulse generation module, when the detector signal input and the pulse signal input are respectively performed, the mutual shunt influence between them can be ignored. Through two detection tests before and after, and data processing using the formula, the noise of the detector and the noise of the preamplifier can be effectively filtered, thereby improving the signal-to-noise ratio of the test signal. Through the present invention, the performance requirements of the detector and the preamplification module can be reduced, and the production cost can be effectively reduced. Description of the Drawings

[0028] Figure 1 This is a schematic diagram of the anti-noise radiation detection circuit of the present invention.

[0029] Figure 2 This is a schematic diagram of the semiconductor detector module and the current pulse generation module of the present invention.

[0030] Figure 3 This is a schematic diagram of the preamplifier module, pole-zero cancellation module and filter shaping module of the present invention.

[0031] Figure 4 This is an equivalent schematic diagram of the detector signal input circuit during ray irradiation.

[0032] Figure 5 This is an equivalent schematic diagram of the test signal input circuit without ray irradiation.

[0033] Figure 6 This is a flowchart of the present invention. Specific embodiments

[0034] In order to enable those skilled in the art to better understand the solution of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. The described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0035] In the embodiments of the present invention, Figure 1 This is a schematic structural diagram provided according to an anti-noise radiation detection circuit of the present invention. The present invention specifically includes a semiconductor detector module 1, a current pulse generation module 2, a preamplifier module 3, a pole-zero cancellation module 4 and a filter shaping module 5. The output ends of the semiconductor detector module 1 and the current pulse generation module 2 are both connected to the input end of the preamplifier module 3. The output end of the preamplifier module 3 is connected to the input end of the pole-zero cancellation module 4. The input end of the filter shaping module 5 is connected to the output end of the pole-zero cancellation module 4.

[0036] Among them, the semiconductor detector module 1 can detect the radiation source and output a radiation detection signal. The current pulse generation module 2 can generate a current pulse signal to simulate the signal generated by the semiconductor detector module 1. Specifically, the pulse current generation module can generate a current pulse signal according to the pulse voltage signal sent by the signal generator.

[0037] The preamplification module 3 can perform primary amplification on the radiation detection signal or current pulse signal. The pole-zero cancellation module 4 can perform baseline restoration on the amplified radiation detection signal or current pulse signal. The filter shaping circuit can perform secondary amplification and filtering on the radiation detection signal or current pulse signal after baseline restoration.

[0038] As Figure 2 shown, the semiconductor detector module 1 includes a current-limiting resistor R1 and a detector DET. One end of the detector DET is connected to one end of the current-limiting resistor R1, the other end of the detector DET is connected to the signal ground, and the other end of the current-limiting resistor R1 is connected to high voltage. The semiconductor detector module 1 is connected to the input end of the preamplification module 3 through a coupling capacitor C1. The semiconductor detector module 1 is used to generate a radiation detection signal.

[0039] Taking the semiconductor detector as an example, according to Equation 1, when the energy loss of the ray is E, the charge Q carried by the output signal of the detector can be obtained i .

[0040]

[0041] where E is the energy loss of the radiation source / eV, w e is the average ionization energy required to generate electron-hole pairs / eV, and e - is the charge of an electron.

[0042] As Figure 2 shown, the current pulse generation module 2 can adopt the following structure: including a first voltage-dividing resistor R2, a second voltage-dividing resistor R3, and a precision resistor R4. One end of the first voltage-dividing resistor R2 is connected to one end of the second voltage-dividing resistor R3. The other end of the first voltage-dividing resistor R2 is connected to the signal generator, the other end of the second voltage-dividing resistor R3 is connected to the signal ground, one end of the precision resistor R4 is connected to one end of the second voltage-dividing resistor R3, and the other end of the precision resistor R4 is connected to the preamplification module 3.

[0043] Considering that the output signal of the semiconductor detector circuit is a current pulse signal with a very small pulse amplitude, therefore, as the current pulse generation module 2 for simulating the detector signal input, after the voltage pulse signal generated by the signal generator is respectively connected to the voltage-dividing resistor R2, resistor R3, and precision resistor R4, a pulse current signal with an adjustable pulse amplitude is formed. In order to reduce the thermal noise of the precision resistor, its resistance value should be minimized as much as possible. At the same time, in order to simulate a pulse current signal with a lower amplitude, the lower limit of the voltage generated by the pulse generator should be as low as possible. Considering that under normal circumstances, the lower limit of the pulse amplitude of the voltage signal generated by the signal generator is only in the mV range, a resistor voltage-dividing circuit is also designed to further reduce the lower limit of the test input signal pulse amplitude.

[0044] The charge Q carried by the test signal input circuit i can be expressed by Equation 2:

[0045]

[0046] where V test is the voltage of the signal generated by the signal generator; t w is the voltage pulse width of the signal generated by the signal generator.

[0047] As Figure 3 shown, the preamplification module 3 includes a first amplifier A1, a discharge resistor Rf, and an integrating capacitor Cf. The negative input terminal of the first amplifier A1 is respectively connected to one end of the discharge resistor Rf and one end of the integrating capacitor Cf. The other end of the discharge resistor Rf and the other end of the integrating capacitor Cf are both connected to the output terminal of the first amplifier A1. The positive input terminal of the first amplifier A1 is connected to the signal ground.

[0048] The pole-zero cancellation module 4 includes a first resistor Rp and a first capacitor C0. One end of the first resistor Rp is connected to one end of the first capacitor C0, and the other end of the first resistor Rp is connected to the other end of the first capacitor C0. One end of the first capacitor C0 is connected to the output terminal of the preamplification module, and the other end of the first capacitor C0 is connected to the input terminal of the filter shaping circuit. The pole-zero cancellation module 4 is composed of the first resistor Rp and the first capacitor C0 and is used to restore the output signal baseline.

[0049] The filter shaping module 5 includes a second amplifier A2, a third amplifier A3, a second resistor RS, a third resistor R0, a second capacitor CS, a fourth resistor R5, and a fifth resistor R6. The positive input terminal of the second amplifier A2 is connected to one end of the third resistor R0. The negative input terminal of the second amplifier A2 is respectively connected to one end of the second resistor RS and one end of the second capacitor CS. The other end of the second resistor RS and the other end of the second capacitor CS are both connected to the output terminal of the second amplifier A2. The positive input terminal of the third amplifier A3 is connected to the output terminal of the second amplifier A2. The negative input terminal of the third amplifier A3 is respectively connected to one end of the fourth resistor R5 and one end of the fifth resistor R6. The other end of the fourth resistor R5 is connected to the signal ground, and the other end of the fifth resistor R6 is connected to the output terminal of the third amplifier A3. The filter shaping module 5 is used to suppress noise and stabilize the waveform, and at the same time, amplify the signal twice.

[0050] To reduce the influence of the detector distributed capacitance and improve the circuit gain stability, the semiconductor preamplification module 3 is mostly a charge-sensitive amplifier circuit. Therefore, the output voltage V of the preamplification modulef and the electric charge Q carried by the input signal i can be expressed by Equation 3:

[0051]

[0052] where C f is the integrating capacitor.

[0053] For a semiconductor detector, when the electric field strength is strong enough, the rate after the electron-hole pairs are saturated is 10 7 cm / s. The depletion layer thickness of the Si-PIN semiconductor detector used in this embodiment is 300 μm. Considering the low power consumption requirement of the detection system, the reverse bias voltage of the detector is relatively low, resulting in an actual collection time t max of about several tens to several hundreds of ns. At the same time, for the measurement of low-energy ray input, the electric charge carried by the output signal of the semiconductor detector circuit is on the order of several fC. Therefore, the average current i p during the signal collection time can be as low as the nA level.

[0054]

[0055] In order to simulate the input pulse current signal of the nA level, and at the same time, when the detector signal input and the test signal input are performed separately, the mutual shunt influence between them is ignored. The parameters of the precision resistor and the AC coupling capacitor are reasonably set. In this embodiment, the precision resistor R4 is selected as 100 kΩ; the voltage dividing resistors R2 and R3 are 1 kΩ and 0.1 kΩ respectively; the coupling capacitor C1 is 10 nF.

[0056] The first amplifier A1, the second amplifier A2 and the third amplifier A3 all adopt the AD8066 chip. Among them, the first amplifier A1 and the second amplifier A2 adopt the dual-channel chip AD8066, so that the preamplification circuit and the filter shaping circuit are integrated into one.

[0057] Another technical solution of the present invention provides a noise-resistant radiation detection method, which is applied to any one of the above-mentioned noise-resistant radiation detection circuits, such as Figure 6 shown, including:

[0058] S10: Detect a known radiation source by using the noise-resistant radiation detection circuit, and obtain the first output voltage output by the noise-resistant radiation detection circuit.

[0059] In the present invention, taking 241 the 59.5 keV γ-ray of the Am source as an example, 241 irradiate the noise-resistant radiation detection circuit with the 59.5 keV γ-ray of the Am source, and read its output voltage with an oscilloscope. According to Figure 4As shown, the equivalent diagram of the signal input circuit during ray irradiation is considered. Given that the precision resistor R4 is 100 kΩ respectively, and at a signal frequency in the MHz band, the AC coupling capacitor C1 is 10 nF. The influence brought by the shunt of the precision resistor R4 can be ignored, and the signal current basically flows into the input end of the preamplification module through the coupling capacitor C1. Therefore, the first output voltage of the anti-noise radiation detection circuit can also be expressed by Equation 5:

[0060] V0(i1) = V i1 +V D +V A (5)

[0061] Among them, V0(i1) represents the first output voltage of the anti-noise radiation detection circuit obtained by the oscilloscope during the ray radiation test using a known radiation source; V i1 represents the effective voltage contributed by the irradiation of the known radiation source in this test; V D represents the detection noise voltage of the semiconductor detector; V A represents the amplified noise voltage contributed by the preamplification module.

[0062] S20: Withdraw the known radiation source, adjust the signal generator so that the second output voltage of the anti-noise radiation detection circuit is equal to the first output voltage, and obtain the first effective voltage output by the signal generator;

[0063] Next, after withdrawing the known radiation source, by adjusting the parameters of the signal generator, make the output voltage fluctuation of the anti-noise radiation detection circuit coincide with the output voltage fluctuation during irradiation with the known radiation source, that is, the second output voltage of the anti-noise radiation detection circuit is equal to the first output voltage.

[0064] According to Figure 5 As shown, the equivalent schematic diagram of the signal input circuit of the signal generator without ray irradiation. The semiconductor detector can be regarded as a device with a distributed capacitance of C d and a high resistance value connected to one end of the coupling capacitor C1. Considering that the distributed capacitance C d is usually in the pF order of magnitude, and at a signal frequency in the MHz band, the AC coupling capacitor C1 is 10 nF, the influence brought by the shunt of the detector input circuit can be ignored. Finally, the second output voltage V0(j1) of the anti-noise radiation detection circuit can be expressed by Equation 6:

[0065] V0(j1) = V j1 +V A (6)

[0066] At the same time, combining Equation 5 and Equation 6 to obtain Equation 7:

[0067] V i1 +VD = V j1 (7)

[0068] Among them, V0(j1) represents the second output voltage of the anti-noise radiation detection circuit obtained by using an oscilloscope after evacuating the known radiation source; V j1 represents the first effective voltage contributed by the signal generator after evacuating the known radiation source.

[0069] It can be seen from Equation (7) that the amplified noise voltage V contributed by the preamplifier has been removed from this equation A .

[0070] S30: Detect the radiation source to be measured using the anti-noise radiation detection circuit, and obtain the third output voltage output by the anti-noise radiation detection circuit.

[0071] Irradiate the anti-noise semiconductor detection circuit with the radiation to be measured, and read the third output voltage of the anti-noise semiconductor detection circuit using an oscilloscope. At the same time, the influence brought by the shunting of the precision resistor R4 can be ignored. Finally, the output voltage of the anti-noise semiconductor detection circuit can be expressed by Equation (8):

[0072] V0(i2) = V i2 + V D + V A (8)

[0073] Among them, V0(i2) represents the third output voltage of the filter shaping circuit obtained by the oscilloscope during the test of the radiation to be measured; V i2 represents the effective voltage contributed by the radiation to be measured during the test of the radiation to be measured.

[0074] S40: Evacuate the radiation source to be measured, and adjust the signal generator so that the fourth output voltage output by the anti-noise radiation detection circuit is equal to the third output voltage, and obtain the second effective voltage output by the signal generator.

[0075] When evacuating the range of the radiation to be measured, by adjusting the parameters of the signal generator, the output voltage fluctuation of the anti-noise semiconductor detection circuit is made to coincide with the output voltage fluctuation when irradiated with the radiation to be measured, that is, the fourth output voltage output by the anti-noise radiation detection circuit is equal to the third output voltage.

[0076] At the same time, the influence brought by the shunting of the detector input circuit can be ignored. Finally, the fourth output voltage V0(j2) of the anti-noise semiconductor detection circuit can be expressed by Equation (9):

[0077] V0(j2) = V j2 + V A (9)

[0078] At the same time, combining Equation (8) and Equation (9) to obtain Equation (10):

[0079] V i2 +V D =V j2 (10)

[0080] Among them, V0(j2) represents the fourth output voltage of the anti-noise semiconductor pre-amplification module obtained by the oscilloscope after evacuating the range of the ray to be measured; V j2 represents the second effective voltage contributed by the signal generator after evacuating the range of the ray to be measured.

[0081] S50: Obtain the energy loss of the radiation source to be measured according to the first effective voltage, the second effective voltage, and the energy loss of the known radiation source.

[0082] Combining Formula 7 and Formula 10, the test formula 11 of the anti-noise semiconductor detection circuit can be obtained:

[0083] V i1 -V i2 =V j1 -V j2 (11)

[0084] Considering that within a short period of time, during two consecutive tests, the amplification gain A between the output signal of the pre-amplification module and the filtered and shaped output signal remains basically constant. At the same time, substituting Formula 1, Formula 2, and Formula 3 into Formula 11, Formula 12 can be obtained:

[0085]

[0086] Among them, E i1 is the energy loss of the known radiation source, E i2 is the energy loss of the radiation source to be measured, A is the amplification gain between the pre-amplification module (3) and the filtered and shaped module, C f is the integration capacitance of the pre-amplification module, w e is the average ionization energy required to generate electron-hole pairs, e - is the electric charge of an electron, R4 is a precision resistor, R2 is the first voltage-dividing resistor, R3 is the second voltage-dividing resistor, t w is the voltage pulse width of the signal generator, V test1 is the first effective voltage, V test2 is the second effective voltage.

[0087] Using the above formula to obtain the energy loss of the radiation source to be measured, all parameters in Formula 12 are known except for E i2 . Therefore, using Formula 12 for data processing to obtain the energy E i2 lost by the ray to be measured is to remove the noise voltage V D contributed by the radiation detector and the noise voltage V AThe results obtained later.

[0088] In summary, an anti-noise semiconductor detection circuit and its test method according to the present invention provide a practical technical solution. The anti-noise semiconductor detection circuit is added with a signal input circuit, and the parameter values of precision resistors and coupling capacitors are reasonably set. When the detector signal input and the test signal input are respectively carried out, the mutual shunt influence between them can be ignored. At the same time, through the test data obtained from the two experiments before and after, and using the anti-noise test formula obtained by derivation for data processing, the noise of the detector and the preamplifier can be effectively filtered, thereby improving the signal-to-noise ratio of the test signal. Through this test method, the performance requirements of the detector and the preamplifier module can be reduced to a certain extent, and the production cost can be effectively reduced.

[0089] Finally, it should be noted that the above specific embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the examples, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present invention, and they should all be covered within the scope of the claims of the present invention.

Claims

1. An anti-noise radiation detection circuit, characterized in that, It includes a semiconductor detector module (1), a current pulse generation module (2), a preamplification module (3), a pole-zero cancellation module (4), and a filter shaping module (5); The output ends of the semiconductor detector module (1) and the current pulse generation module (2) are both connected to the input end of the preamplification module (3), the output end of the preamplification module (3) is connected to the input end of the pole-zero cancellation module (4), and the input end of the filter shaping module (5) is connected to the output end of the pole-zero cancellation module (4); The semiconductor detector module (1) can detect a radiation source and output a radiation detection signal; The current pulse generation module (2) can generate a current pulse signal to simulate the signal generated by the semiconductor detector module (1); The preamplification module (3) can perform a first amplification on the radiation detection signal or the current pulse signal; The pole-zero cancellation module (4) can perform baseline restoration on the amplified radiation detection signal or current pulse signal; The filter shaping module (5) can perform a second amplification and filtering on the radiation detection signal or current pulse signal after baseline restoration.

2. The anti-noise radiation detection circuit according to claim 1, characterized in that, The semiconductor detector module (1) includes a current-limiting resistor (R1) and a detector (DET). One end of the detector (DET) is connected to one end of the current-limiting resistor (R1), the other end of the detector (DET) is connected to the signal ground, and the other end of the current-limiting resistor (R1) is connected to high voltage.

3. The anti-noise radiation detection circuit according to claim 1, characterized in that, The current pulse generation module (2) includes a first voltage-dividing resistor (R2), a second voltage-dividing resistor (R3), and a precision resistor (R4). One end of the first voltage-dividing resistor (R2) is connected to one end of the second voltage-dividing resistor (R3), the other end of the first voltage-dividing resistor (R2) is connected to a signal generator, the other end of the second voltage-dividing resistor (R3) is connected to the signal ground, one end of the precision resistor (R4) is connected to one end of the second voltage-dividing resistor (R3), and the other end of the precision resistor (R4) is connected to the preamplification module (3).

4. The anti-noise radiation detection circuit according to claim 1, characterized in that, The preamplification module (3) includes a first amplifier (A1), a discharging resistor (Rf), and an integrating capacitor (Cf). The negative input end of the first amplifier (A1) is respectively connected to one end of the discharging resistor (Rf) and one end of the integrating capacitor (Cf), the other ends of the discharging resistor (Rf) and the integrating capacitor (Cf) are both connected to the output end of the first amplifier (A1), and the positive input end of the first amplifier (A1) is connected to the signal ground.

5. The anti-noise radiation detection circuit according to claim 4, wherein The pole-zero cancellation module (4) includes a first resistor (Rp) and a first capacitor (C0). One end of the first resistor (Rp) is connected to one end of the first capacitor (C0), the other end of the first resistor (Rp) is connected to the other end of the first capacitor (C0), one end of the first capacitor (C0) is connected to the output end of the preamplification module, and the other end of the first capacitor (C0) is connected to the input end of the filter shaping circuit.

6. The anti-noise radiation detection circuit according to claim 5, characterized in that, The filtering and shaping module (5) includes a second amplifier (A2), a third amplifier (A3), a second resistor (RS), a third resistor (R0), a second capacitor (CS), a fourth resistor (R5), and a fifth resistor (R6). One end of the third resistor (R0) is connected to the non-inverting input terminal of the second amplifier (A2). One end of the second resistor (RS) and one end of the second capacitor (CS) are respectively connected to the inverting input terminal of the second amplifier (A2). The other end of the second resistor (RS) and the other end of the second capacitor (CS) are both connected to the output terminal of the second amplifier (A2). The non-inverting input terminal of the third amplifier (A3) is connected to the output terminal of the second amplifier (A2). One end of the fourth resistor (R5) and one end of the fifth resistor (R6) are respectively connected to the inverting input terminal of the third amplifier (A3). The other end of the fourth resistor (R5) is connected to the signal ground, and the other end of the fifth resistor (R6) is connected to the output terminal of the third amplifier (A3).

7. The anti-noise radiation detection circuit according to claim 6, wherein, The first amplifier (A1), the second amplifier (A2), and the third amplifier (A3) all use AD8066 chips.

8. A method for anti-noise radiation detection, applied to the anti-noise radiation detection circuit described in claim 3, characterized in that, including: S10: Detect a known radiation source using an anti-noise radiation detection circuit, and obtain a first output voltage output by the anti-noise radiation detection circuit; S20: Remove the known radiation source, adjust the signal generator so that the second output voltage output by the anti-noise radiation detection circuit is equal to the first output voltage, and obtain a first effective voltage output by the signal generator; S30: Detect a radiation source to be measured using the anti-noise radiation detection circuit, and obtain a third output voltage output by the anti-noise radiation detection circuit; S40: Remove the radiation source to be measured, adjust the signal generator so that the fourth output voltage output by the anti-noise radiation detection circuit is equal to the third output voltage, and obtain a second effective voltage output by the signal generator; S50: Obtain the energy loss of the radiation source to be measured according to the first effective voltage, the second effective voltage, and the energy loss of the known radiation source.

9. The anti-noise radiation detection method according to claim 8, characterized in that Step S50 further includes: obtaining the energy loss of the radiation source to be measured according to the first effective voltage, the second effective voltage, and the energy loss of the known radiation source using a formula. The formula is: Among them, E i1 is the energy loss of the known radiation source, and E i2 is the energy loss of the radiation source to be measured. A is the amplification gain between the pre-amplification module and the filter shaping module, and C f is the integration capacitor of the pre-amplification module. w e is the average ionization energy required to generate electron-hole pairs, e - is the electric charge of an electron. R4 is a precision resistor, R2 is the first voltage dividing resistor, and R3 is the second voltage dividing resistor. t w is the voltage pulse width of the signal generator. V test1 is the first effective voltage, and V test2 is the second effective voltage.

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