Single bipolar coexisting resistive random access memory with controllable defects of single-layer amorphous gallium oxide and preparation method

Abstract

A single bipolar coexistence resistance change memory of single-layer amorphous gallium oxide with controllable defects and a preparation method, the device comprises a lower electrode, a resistance change material layer and an upper electrode arranged in turn from bottom to top; the lower electrode, the resistance change material layer and the upper electrode are all single-layer structures, the lower electrode adopts a Pt substrate, the resistance change material layer adopts an amorphous gallium oxide film, and the upper electrode adopts an active electrode Ag; wherein the resistance change material layer is prepared by a magnetron sputtering method, the oxygen defect concentration in the amorphous gallium oxide film can be controlled by changing the proportion of argon and oxygen flow in the magnetron sputtering process, so that the device has both unipolar and bipolar modes, and only the same current limiting is used in the single bipolar reversible change, and the same current limiting condition can simplify the circuit design of the integrated resistance change memory periphery, so as to reduce the integrated circuit area and the circuit power consumption. Finally, a vacuum evaporation equipment is used to prepare a 100-200nm upper electrode Ag. The present application simplifies the process flow, and has the advantages of simple structure, low power consumption and high device performance.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor storage, in particular to a single-layer amorphous gallium oxide defect-controllable single-dual-polarity coexisting resistive random access memory and a preparation method thereof. BACKGROUND

[0002] With the continuous progress of semiconductor technology, the feature size is continuously reduced. For the traditional non-volatile memory represented by the floating gate structure flash, when its process node is reduced to 22 nm, its leakage power consumption, integration, and the like become barriers to its further development. Moreover, in terms of storage speed, the gap between volatile memory and non-volatile memory indicates that there should be a kind of memory between them.

[0003] New types of memories such as ferroelectric memory, magnetic memory, phase change memory, and resistive random access memory (RRAM) are receiving more and more attention. Among them, RRAM is favored for its simple structure, high window, low power consumption, fast read-write speed, and compatibility with existing CMOS processes. RRAM is divided into single-polarity and bipolarity according to its dependence on the polarity of the voltage during the resistive random access memory (RRAM) process. Both single-polarity and bipolarity have their own unique characteristics. For example, bipolarity signal changes continuously, and the resistive random access memory (RRAM) conversion speed is fast, which can be applied in the analog field and high-speed storage field. Single-polarity has the characteristics of large window, easy reading and writing, and high storage density. However, current research on resistive random access memory (RRAM) mainly focuses on improving the performance of single polarity, and there is little research on single-dual-polarity coexistence.

[0004] Patent application CN105226182B discloses a single-dual-polarity coexisting double-layer thin film structure resistive random access memory (RRAM) and a preparation method thereof. A metal Ti / Au is used as the upper electrode, ITO is used as the substrate and the lower electrode, Cu2O and Ga2O3 thin films are deposited on the ITO substrate in sequence by using radio frequency magnetron deposition technology to form a resistive random access memory (RRAM) layer, and finally, titanium (Ti) and gold (Au) thin films are sputtered on the gallium oxide thin film that has been plated by using radio frequency magnetron sputtering method, thereby obtaining an ITO / Cu2O / Ga2O3 / Ti / Au structure memory device. The resistive random access memory (RRAM) realizes reversible conversion of single-polarity and bipolarity, and has stable retention characteristics, cycle characteristics, and other excellent storage performances. However, the double-layer resistive random access memory (RRAM) material layer and the Au / Ti mixed electrode significantly increase the process difficulty, and in the reversible conversion process of single-dual-polarity coexistence, different current limits need to be set for single-polarity and bipolarity to realize the process, which is complicated. SUMMARY

[0005] In order to overcome the problems existing in the prior art, the application provides a single-layer amorphous gallium oxide single-dual coexisting resistive switching memory with controllable defects and a preparation method thereof.

[0006] In order to achieve the above object, the application provides the following technical scheme.

[0007] The single-layer amorphous gallium oxide single-dual coexisting resistive switching memory with controllable defects comprises a lower electrode 3, a resistive switching material layer 2 and an upper electrode 1 arranged in sequence from bottom to top.

[0008] The thickness of the upper electrode 1 is 100-200 nm.

[0009] The upper electrode 1 is a circular hole electrode with a diameter of 0.1-0.5 mm.

[0010] The thickness of the resistive switching material layer 2 is 30-70 nm.

[0011] The preparation method of the single-layer amorphous gallium oxide single-dual coexisting resistive switching memory with controllable defects comprises the following specific steps.

[0012] 1) ultrasonic cleaning of a Pt substrate;

[0013] 2) deposition of a single-layer amorphous gallium oxide film on the Pt substrate cleaned in step 1) by a magnetron sputtering method;

[0014] 3) annealing treatment of the Pt substrate with the deposited single-layer amorphous gallium oxide film in step 2) in a nitrogen environment;

[0015] 4) evaporation of an Ag electrode on the single-layer amorphous gallium oxide film.

[0016] The step 1) specifically comprises the following steps: cutting a Pt substrate, cleaning the substrate in an ultrasonic cleaning machine with deionized water for 10-15 min to remove dust on the surface of the substrate, then cleaning the substrate with acetone for 10-15 min to remove organic impurities on the surface of the substrate, then cleaning the substrate with alcohol with a volume fraction of 75%-95% for 10-15 min to remove acetone adhered to the surface of the substrate, and finally cleaning the substrate with deionized water for 3-5 min to remove alcohol adhered to the surface of the substrate; after the cleaned Pt substrate is dried, the substrate is placed in a tray.

[0017] The step 2) is specifically: the tray with the Pt substrate cleaned in step 1) is fixed in a magnetron sputtering chamber, and the vacuum degree is extracted to 9*10 -4 Pa, the power is set to 100-140W, the sputtering pressure is 0.6-1.2Pa, the temperature is room temperature, then argon-oxygen mixed gas is introduced, the total flow of argon and oxygen is 50sccm, and the oxygen content is between 10% and 20%, so that the oxygen defect concentration in amorphous gallium oxide is controlled, the magnetron sputtering device is started, the sputtering time is 5-12 minutes, the sputtering thickness is 30-70nm, and a single-layer amorphous gallium oxide film with controllable defects is deposited.

[0018] The step 3) is specifically: the Pt substrate with the single-layer amorphous gallium oxide film with controllable defects deposited in step 2) is placed in a nitrogen atmosphere glove box, and annealed at 200-300 DEG C for 10-20 minutes.

[0019] The step 4) is specifically: the Pt substrate with the single-layer amorphous gallium oxide film with controllable defects deposited after annealing in step 3) is taken out, adhered to a mask plate, and Ag electrodes are evaporated on the single-layer amorphous gallium oxide film with controllable defects by using a vacuum evaporation device, and the thickness of the upper electrode Ag is 100-200nm.

[0020] Compared with the best prior art, the present application has the following advantages:

[0021] (1) The preparation process is simple: the resistive switching material layer and the upper and lower electrodes of the present application are single-layer. The single-layer amorphous gallium oxide film with controllable defects is used as the resistive switching material layer, compared with other multi-layer thin film resistive switching memories, the preparation process is greatly simplified and the process cost is reduced under the premise of maintaining good resistive switching performance. Gallium oxide has high dielectric constant and good insulation performance, and is a very ideal resistive switching material, which has stronger environmental friendliness compared with the perovskite-based resistive switching memory.

[0022] (2) The same current limit is required for reversible conversion of single and bipolar: most single and bipolar coexisting devices need to set different current limits when performing reversible conversion, and in step 2) of the present application, the concentration of oxygen vacancy defects in amorphous gallium can be controlled by changing the oxygen content in the argon-oxygen flow, and the concentration of oxygen vacancy, as an important component of conductive filaments in resistive switching memories, provides conditions for the device to have single and bipolar properties.

[0023] (3) The device prepared by the application has stable single-dual-polarity coexistence phenomenon, the continuous I-V curve of the dual polarity is suitable for analog field, and the switching speed of high and low resistance state is relatively fast; the high and low resistance state switching operation of the single polarity is simple and suitable for digital field. Compared with the resistive random access memory with only single polarity, the single-dual-polarity coexistence resistive random access memory has strong market competitiveness. Moreover, only one limiting current is needed in the single-dual-polarity reversible transition process, and the application in future integrated circuits has great advantages. The same current limiting condition can simplify the circuit design of the integrated resistive random access memory, so as to reduce the integrated circuit area and power consumption.

[0024] (4) The device prepared by the application has excellent resistive random access memory characteristics. Ag is used as the upper electrode of the resistive random access memory. In the dual polarity mode, the active electrode Ag realizes the breakage of silver conductive filaments through redox reaction. In this process, the breakage of the conductive filaments is not complete, so that the setting voltage and the resetting voltage gradually converge to within 0.5V under a smaller voltage in the next setting, thereby having strong competitiveness in power consumption. In the retention test, the dual polarity and single polarity modes are greater than 10 4 s, and the high and low resistance ratio in the dual polarity mode reaches 10 7 , and the high and low resistance ratio in the single polarity mode reaches 10 6 .

[0025] Overall, the resistive random access memory prepared by the application can realize stable transition of single-dual-polarity mode, and both modes have a large storage window and excellent retention characteristics. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the one or more embodiments of the present disclosure or the related art, the drawings needed to be used in the embodiment or related art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments described in the one or more embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative labor. Other features, objects and advantages of the present disclosure will become more apparent by reading the following detailed description of the non-limiting embodiments with reference to the following drawings:

[0027] Figure 1 is a structural schematic diagram of a Pt / Ga2O3 / Ag single-layer thin film resistive random access memory device prepared by the method of the application.

[0028] Figure 2 is a typical I-V curve of the dual polarity mode of the resistive random access memory prepared by the method of the application.

[0029] Figure 3is a typical I-V curve of the unipolar mode of the resistive random access memory prepared by the method of the application.

[0030] Figure 4 is the retention characteristic of the bipolar mode and the unipolar mode of the resistive random access memory prepared by the method of the application.

[0031] In the figure: 1, upper electrode; 2, resistive material layer; 3, lower electrode. DETAILED DESCRIPTION

[0032] The technical solutions in the embodiments of the application will be apparently and completely described below with reference to the drawings in the embodiments of the application. Obviously, the described embodiments are only part of the embodiments of the application, rather than all the embodiments. Based on the embodiments in the application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the application.

[0033] In the description of the embodiments of the application, the meaning of "a plurality of" is two or more, unless otherwise specified.

[0034] A single-layer amorphous gallium oxide single-bipolar coexisting resistive random access memory with controllable defects comprises, from bottom to top, a lower electrode 3, a resistive material layer 2 and an upper electrode 1; the lower electrode 3, the resistive material layer 2 and the upper electrode 1 are all single-layer structures, the upper electrode 1 adopts an active electrode Ag, the lower electrode 3 adopts a Pt substrate, and the resistive material layer adopts an amorphous gallium oxide film. Gallium oxide has a high dielectric constant, a band gap of 4.9 eV and good insulation performance, is an ideal resistive material, and is stable and non-toxic, which can make up for the shortcomings of perovskite materials.

[0035] The thickness of the upper electrode 1 is 100-200 nm.

[0036] The upper electrode 1 is a circular hole electrode with a diameter of 0.1-0.5 mm.

[0037] The thickness of the resistive material layer 2 is 30-70 nm.

[0038] A preparation method of a single-layer amorphous gallium oxide single-bipolar coexisting resistive random access memory with controllable defects, and the specific steps are as follows:

[0039] 1) Ultrasonic cleaning of the Pt substrate: cut the Pt substrate, first clean it with deionized water in an ultrasonic cleaning machine for 10-15 min to remove dust on the surface of the substrate, then clean it with acetone for 10-15 min to remove organic impurities on the surface of the substrate, then clean it with alcohol with a volume fraction of 75%-95% for 10-15 min to remove acetone adhered to the surface of the substrate, and finally clean it with deionized water for 3-5 min to remove alcohol adhered to the surface of the substrate. Blow dry the cleaned Pt substrate and place it in a tray.

[0040] 2) Using the method of magnetron sputtering to deposit a single layer of amorphous gallium oxide film on the Pt substrate cleaned in step 1): Put the tray with the Pt substrate cleaned in step 1) into the magnetron sputtering chamber and fix it, and vacuumize to 9*10 -4 Pa, set the power to 100-140 W, the sputtering pressure to 0.6-1.2 Pa, and the temperature to room temperature, then introduce argon-oxygen mixed gas, the total flow of argon and oxygen is 50 sccm, and the oxygen content is between 10%-20% to control the oxygen defect concentration in the amorphous gallium oxide, turn on the magnetron sputtering device, the sputtering time is 5-12 minutes, the sputtering thickness is 30-70 nm, and a single layer of amorphous gallium oxide film with controllable defects is deposited;

[0041] The process flow of the magnetron sputtering method is simple and easy to control, and the thin film formed by sputtering has good uniformity and strong adhesion, and usually has good electrical properties;

[0042] 3) Annealing the Pt substrate with a single layer of amorphous gallium oxide film deposited in step 2) in a nitrogen environment: Put the Pt substrate with a single layer of amorphous gallium oxide film deposited in step 2) into a nitrogen atmosphere glove box and anneal at 200-300℃ for 10-20 minutes;

[0043] 4) Evaporate Ag electrode onto the single layer of amorphous gallium oxide film: Take out the Pt substrate with a single layer of amorphous gallium oxide film deposited after annealing in step 3), stick it on a mask, and use a vacuum evaporation device to evaporate Ag electrode onto the single layer of amorphous gallium oxide film, the thickness of the upper electrode Ag is 100-200 nm.

[0044] Performance test

[0045] 1) After the device is prepared, use semiconductor parameter instrument 4200 to test the electrical properties of the resistive random access memory. The Ag electrode is connected to the positive, and the Pt electrode is connected to the negative. First, write 0→5V voltage to the device, and then scan the voltage from 0→-5V, and the voltage step is 0.04V, and the test is repeated for multiple cycles to complete a group of I-V curves, Figure 2 It can be seen that the setting voltage is 3V. Then the scanning voltage sequence becomes 0→4V→0→-2V→0, the voltage step is 0.04V in the positive direction and 0.02V in the negative direction, and multiple cycle tests are performed to complete multiple groups of I-V curves under bipolarity, Figure 2 A group of typical bipolar I-V curves is given. After completing the bipolar I-V curve test, the unipolar I-V curve test is performed. The voltage polarity of the upper and lower electrodes is unchanged, the scanning voltage sequence is 0→4V→0→2V→0, the voltage step is 0.04V and 0.02V in the positive direction, and multiple cycle tests are performed to complete multiple groups of I-V curves under unipolarity, Figure 3A set of typical unipolar IV curves are presented. Furthermore, the limiting current is 1mA for both unipolar and bipolar systems.

[0046] 2) The retention characteristics were also tested using a 4200 semiconductor parameter analyzer. First, in bipolar mode, the device was set, and then data was read at 0.15V with a 10-second interval, for a total of 1000 data points. Then, the device was reset in bipolar mode, and data was read again at 0.15V with a 10-second interval, for a total of 1000 data points. In unipolar mode, the same process was repeated: first, the device was set, and then data was read at 0.15V with a 10-second interval, for a total of 1000 data points. Then, the device was reset in unipolar mode, and then data was read again at 0.15V with a 10-second interval, for a total of 1000 data points. Figure 4 As can be seen, resistive switching memories in both unipolar and bipolar configurations can maintain 10 [units / times / etc.] relatively well. 4 s. And from Figure 4 It can be seen that bipolar memory has approximately 10 7 The high and low resistances, with 10 in unipolar cases. 6 It has a high resistance-to-low resistance ratio and a large storage window.

[0047] Example 1

[0048] A single-layer amorphous gallium oxide monopolar and bipolar coexisting resistive switching memory with controllable defects is disclosed. The resistive switching memory uses Pt as a substrate (lower electrode), an amorphous gallium oxide thin film as the resistive switching layer material, and Ag as the upper electrode.

[0049] In this embodiment, the resistive switching memory based on defect-controllable single-layer amorphous gallium oxide with coexisting single and bipolar electrodes has a gallium oxide film thickness of 60 nm and an upper electrode of Ag with a thickness of 100 nm.

[0050] The method for fabricating a defect-controllable single-layer amorphous gallium oxide monopolar and bipolar coexisting resistive switching memory includes the following steps:

[0051] 1) Clean the cut Pt substrate with deionized water for 15 minutes in an ultrasonic cleaner to remove dust from the substrate surface. Then clean with acetone for 15 minutes to remove organic impurities from the substrate surface. After that, clean with 75% alcohol for 15 minutes to remove acetone adhering to the substrate surface. Finally, clean with deionized water for 5 minutes to remove alcohol adhering to the substrate surface. After drying the cleaned Pt substrate, place it on a tray.

[0052] 2) Place the tray containing the Pt substrate cleaned in step 1) into the magnetron sputtering chamber and fix it in place. Evacuate the vacuum to 8*10. -4Pa, the power is set to 120W, the sputtering pressure is 0.6Pa, the temperature is room temperature, then the argon-oxygen mixed gas is introduced, the total flow rate of argon and oxygen is 50sccm, and the oxygen content is 10%, so as to control the oxygen defect concentration in the amorphous gallium oxide, the magnetron sputtering device is started, the sputtering time is 10 minutes, the sputtering thickness is 60nm, and the single-layer amorphous gallium oxide film with controllable defects is deposited;

[0053] 3) The Pt substrate on which the single-layer amorphous gallium oxide film with controllable defects is deposited in step 2) is placed in a nitrogen atmosphere glove box, and annealed at 300℃ for 20 minutes;

[0054] 4) The Pt substrate on which the single-layer amorphous gallium oxide film with controllable defects is deposited after annealing in step 3) is taken out, adhered to a mask, and the Ag electrode is evaporated onto the single-layer amorphous gallium oxide film with controllable defects by using a vacuum evaporation device, and the thickness of the upper electrode Ag is 100nm.

[0055] It should be understood that although the present specification is described in terms of embodiments, not every embodiment contains only one independent technical solution, and the description of the specification is only for the sake of clarity, and those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can be combined appropriately to form other embodiments that those skilled in the art can understand.

Claims

1. A method for fabricating a defect-controllable single-layer amorphous gallium oxide monopolar and bipolar coexisting resistive switching memory, characterized in that: The specific steps are as follows: 1) ultrasonic cleaning of the Pt substrate; 2) The method of magnetron sputtering is used to deposit a single layer of amorphous gallium oxide film on the Pt substrate cleaned in step 1), specifically: the tray with the Pt substrate cleaned in step 1) is placed in the magnetron sputtering chamber and fixed, the vacuum degree is extracted to 9*10 -4 When the pressure is below 0.6 Pa, the power is set to 100-140 W, the sputtering pressure is 0.6-1.2 Pa, the temperature is room temperature, then the argon-oxygen mixed gas is introduced, the total flow of argon and oxygen is 50 sccm, and the oxygen content is between 10%-20% to control the oxygen defect concentration in the amorphous gallium oxide, the magnetron sputtering device is started, the sputtering time is 5-12 minutes, the sputtering thickness is 30-70 nm, and a single layer of amorphous gallium oxide film with controllable defects is deposited 3) annealing of the Pt substrate on which the single-layer amorphous gallium oxide film is deposited in step 2) under a nitrogen atmosphere, specifically, placing the Pt substrate on which the single-layer amorphous gallium oxide film with controllable defects is deposited in step 2) into a nitrogen atmosphere glove box, and annealing at 200-300°C for 10-20 minutes; 4) evaporation of the Ag electrode onto the single-layer amorphous gallium oxide film.

2. The method of claim 1, wherein the method is characterized in that: The step 1) specifically comprises: cutting the Pt substrate, first cleaning the substrate in an ultrasonic cleaner with deionized water for 10-15 minutes to remove dust on the surface of the substrate, then cleaning the substrate with acetone for 10-15 minutes to remove organic impurities on the surface of the substrate, then cleaning the substrate with alcohol with a volume fraction of 75%-95% for 10-15 minutes to remove the acetone adhered to the surface of the substrate, and finally cleaning the substrate with deionized water for 3-5 minutes to remove the alcohol adhered to the surface of the substrate, and then placing the cleaned Pt substrate into a tray after drying.

3. The method of claim 1, wherein the method is characterized by: The step 4) specifically comprises: taking out the Pt substrate on which the single-layer amorphous gallium oxide film with controllable defects is deposited after annealing in step 3), sticking the substrate to a mask, and using a vacuum evaporation device to evaporate the Ag electrode onto the single-layer amorphous gallium oxide film, with the thickness of the upper electrode Ag being 100-200 nm.

4. The method of claim 1, wherein the method is characterized by: The specific steps are as follows: 1) cutting the Pt substrate, first cleaning the substrate in an ultrasonic cleaner with deionized water for 15 minutes to remove dust on the surface of the substrate, then cleaning the substrate with acetone for 15 minutes to remove organic impurities on the surface of the substrate, then cleaning the substrate with alcohol with a volume fraction of 75% for 15 minutes to remove the acetone adhered to the surface of the substrate, and finally cleaning the substrate with deionized water for 5 minutes to remove the alcohol adhered to the surface of the substrate, and then placing the cleaned Pt substrate into a tray after drying; 2) Put the tray with the Pt substrate cleaned in step 1) into the magnetron sputtering chamber and fix it, and vacuumize to 8*10 - 4 Pa, the power is set to 120W, the sputtering pressure is 0.6Pa, the temperature is room temperature, then the argon-oxygen mixed gas is introduced, the total flow of argon and oxygen is 50sccm, and the oxygen content is 10%, so as to control the oxygen defect concentration in amorphous gallium oxide, the magnetron sputtering device is started, the sputtering time is 10 minutes, the sputtering thickness is 60nm, and a single-layer amorphous gallium oxide film with controllable defects is deposited; 3) placing the Pt substrate on which the single-layer amorphous gallium oxide film with controllable defects is deposited in step 2) into a nitrogen atmosphere glove box, and annealing at 300°C for 20 minutes; 4) taking out the Pt substrate on which the single-layer amorphous gallium oxide film with controllable defects is deposited after annealing in step 3), sticking the substrate to a mask, and using a vacuum evaporation device to evaporate the Ag electrode onto the single-layer amorphous gallium oxide film with controllable defects, with the thickness of the upper electrode Ag being 100 nm.

5. A single-layer amorphous gallium oxide based resistive random access memory with controlled defects, prepared according to the method of any one of claims 1 to 4, characterized in that: The specific steps are as follows:

6. The single-layer amorphous gallium oxide based resistive random access memory with controlled defects of claim 5, wherein: 1) cutting the Pt substrate, first cleaning the substrate in an ultrasonic cleaner with deionized water for 15 minutes to remove dust on the surface of the substrate, then cleaning the substrate with acetone for 15 minutes to remove organic impurities on the surface of the substrate, then cleaning the substrate with alcohol with a volume fraction of 75% for 15 minutes to remove the acetone adhered to the surface of the substrate, and finally cleaning the substrate with deionized water for 5 minutes to remove the alcohol adhered to the surface of the substrate, and then placing the cleaned Pt substrate into a tray after drying; 7. The single-layer amorphous gallium oxide based resistive random access memory with controlled defects according to claim 5, wherein: 3) placing the Pt substrate on which the single-layer amorphous gallium oxide film with controllable defects is deposited in step 2) into a nitrogen atmosphere glove box, and annealing at 300°C for 20 minutes; 8. The single-layer amorphous gallium oxide based resistive random access memory with controlled defects according to claim 5, wherein: 4) taking out the Pt substrate on which the single-layer amorphous gallium oxide film with controllable defects is deposited after annealing in step 3), sticking the substrate to a mask, and using a vacuum evaporation device to evaporate the Ag electrode onto the single-layer amorphous gallium oxide film with controllable defects, with the thickness of the upper electrode Ag being 100 nm. The specific steps are as follows: 1) cutting the Pt substrate, first cleaning the substrate in an ultrasonic cleaner with deionized water for 15 minutes to remove dust on the surface of the substrate, then cleaning the substrate with acetone for 15 minutes to remove organic impurities on the surface of the substrate, then cleaning the substrate with alcohol with a volume fraction of 75% for 15 minutes to remove the acetone adhered to the surface of the substrate, and finally cleaning the substrate with deionized water for 5 minutes to remove the alcohol adhered to the surface of the substrate, and then placing the cleaned Pt substrate into a tray after drying; 3) placing the Pt substrate on which the single-layer amorphous gallium oxide film with controllable defects is deposited in step 2) into a nitrogen atmosphere glove box, and annealing at 300°C for 20 minutes; 4) taking out the Pt substrate on which the single-layer amorphous gallium oxide film with controllable defects is deposited after annealing in step 3), sticking the substrate to a mask, and using a vacuum evaporation device to evaporate the Ag electrode onto the single-layer amorphous gallium oxide film with controllable defects, with the thickness of the upper electrode Ag being 100 nm.

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