A zif-67 interface modification layer in a trans-perovskite solar cell and a trans-perovskite solar cell

By introducing a ZIF-67 interface modification layer into a pin-structured perovskite solar cell, the problem of poor adhesion between the perovskite film and the hole transport layer was solved, thereby improving the photoelectric conversion efficiency and the bending stability of the flexible device.

CN115458683BActive Publication Date: 2026-06-02BEIJING INST OF TECH

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
BEIJING INST OF TECH
Filing Date
2022-09-02
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

In existing pin-structured perovskite solar cells, the poor adhesion between the perovskite film and the hole transport layer leads to numerous interface defects, affecting carrier transport and thus reducing photoelectric conversion efficiency and stability. In particular, flexible cells are susceptible to delamination or cracking due to applied stress.

Method used

In pin-structured perovskite solar cells, ZIF-67 metal-organic framework material is introduced as an interface modification layer, located between the hole transport layer and the perovskite active layer. Through the interaction of Co element with N element in PTAA, the interfacial adhesion is improved.

Benefits of technology

This improved the adhesion between the hole transport layer and the perovskite active layer, thereby enhancing the photoelectric conversion efficiency of the inverted perovskite solar cell and the bending stability of the flexible device.

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Abstract

The application relates to a ZIF-67 interface modification layer in a trans-perovskite solar cell and a trans-perovskite solar cell, and belongs to the technical field of perovskite solar cells. The modification material in the interface modification layer is a ZIF-67 metal organic framework material, which is prepared by the following method: a methanol solution of cobalt nitrate hexahydrate and a methanol solution of 2-methyl imidazole with a concentration of 2.5 mM-10 mM are uniformly mixed to obtain a mixed solution, wherein the molar ratio of cobalt nitrate hexahydrate to 2-methyl imidazole is 1:40; the obtained filtrate is spin-coated on a PTAA hole transport layer on a conductive substrate, washed, and dried to obtain the interface modification layer. The interface modification layer is located between the PTAA hole transport layer and a perovskite active layer in the trans-perovskite solar cell, adhesion is improved, and then the photoelectric conversion efficiency of the trans-device and the bending stability of the trans-flexible device are improved.
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Description

Technical Field

[0001] This invention relates to a ZIF-67 interface modification layer in an inverted perovskite solar cell and an inverted perovskite solar cell, belonging to the field of perovskite solar cell technology. Background Technology

[0002] Perovskites possess unique photoelectric properties such as long carrier diffusion length, high tolerance factor, large absorption coefficient, and low exciton binding energy, attracting widespread attention. Perovskite solar cells are solar cells that utilize perovskite-type organometal halide semiconductors as light-absorbing materials. Perovskite solar cells are divided into nip structure solar cells (also known as conventional structure) and pin structure solar cells (also known as inverted structure).

[0003] Compared to NIP (Nibbles-in-Pack) solar cells, PIN (pin) solar cells have attracted much attention in recent years due to their stable operation, low hysteresis, low-temperature processing capability, and low cost. However, both NIP and PIN solar cells suffer from low adhesion between the perovskite film (also known as the perovskite active layer) and the hole transport layer, a problem that is more pronounced in PIN solar cells. Due to the low adhesion, the perovskite film is brittle, resulting in poor interfacial contact and weak interaction between them. This leads to numerous interfacial defects, hindering carrier transport. Ultimately, this results in poor photoelectric conversion efficiency and stability in perovskite solar cells. Particularly in flexible cells, the interface between the perovskite film and the hole transport layer often delaminates or cracks under applied stress.

[0004] Currently, to effectively improve the photoelectric conversion efficiency and operating time of perovskite solar cells, researchers have been working to enhance the interfacial adhesion between the perovskite film and the transport layer, thereby optimizing device performance. In this regard, there has been considerable research in the field of NIP structure solar cells. For example, the research of Reinhold H. Dauskaldt's team showed that the reinforcing scaffold in perovskite solar cells can make the contact between the perovskite layer and the carrier transport layer tighter, thus improving the interfacial adhesion between the perovskite film and the transport layer; at the same time, the reinforcing scaffold can also act as a barrier to protect the perovskite film from mechanical stress. Nitin P. Padture and his colleagues created coarse-grained perovskite films to improve adhesion, thereby improving device efficiency and mechanical reliability. Zhou Yuanyuan et al. improved adhesion by synthesizing a perovskite / SnO2 interpenetrating interface, thus improving the efficiency and long-term operational stability of flexible cells. Histamine diiodate, an interface modification material, also has the same effect; that is, histamine diiodate can improve the interfacial contact between the perovskite film and the electron transport layer, thereby improving adhesion. While the four methods listed above can improve the adhesion of the perovskite absorber and transport layers, they are only applicable to perovskite solar cells with nip structures. For pin-structured solar cells, these four methods are not suitable, and currently no interface modification materials have been found that can be used in pin-structured devices to improve the photoelectric conversion efficiency of pin-structured perovskite solar cells and the bending performance of inverted flexible devices.

[0005] ZIF-67 metal-organic framework materials are typically used in catalysis due to their large specific surface area and numerous active sites. However, there are currently no reports of ZIF-67 metal-organic framework materials being used as interface modification materials in perovskite solar cells. Summary of the Invention

[0006] In view of this, the purpose of the present invention is to provide a ZIF-67 interface modification layer for an inverted perovskite solar cell and an inverted perovskite solar cell. The interface modification layer is located between the hole transport layer and the perovskite active layer of the inverted perovskite solar cell, which can improve the adhesion between the hole transport layer and the perovskite active layer, improve the interface properties, thereby improving the photoelectric conversion efficiency of the inverted perovskite solar cell and the bending stability of the inverted flexible device.

[0007] To achieve the objectives of this invention, the following technical solutions are provided.

[0008] A ZIF-67 interface modification layer in a perovskite solar cell, wherein the interface modification layer is located between the poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) hole transport layer and the perovskite active layer in an inverted perovskite solar cell; the modification material constituting the interface modification layer is a ZIF-67 metal-organic framework material, and the unit molecular formula of the ZIF-67 metal-organic framework material is C4H6N2.Co.

[0009] Preferably, the interface modification layer is prepared by the following method:

[0010] (a) A methanol solution of cobalt nitrate hexahydrate and a methanol solution of 2-methylimidazole are mixed evenly to obtain a mixed solution; wherein the concentration of cobalt nitrate hexahydrate in the methanol solution of cobalt nitrate hexahydrate is 0.0625 mM to 0.25 mM, the concentration of 2-methylimidazole in the methanol solution of 2-methylimidazole is 2.5 mM to 10 mM, and the molar ratio of cobalt nitrate hexahydrate to 2-methylimidazole in the mixed solution is 1:40; the mixed solution is filtered to obtain a filtrate; the pore size of the filter is greater than 0 and less than or equal to 0.8 μm, that is, a filter containing a filter membrane with a pore size greater than 0 and less than or equal to 0.8 μm is used for filtration;

[0011] (b) Add the filtrate to the PTAA hole transport layer on the conductive substrate until the PTAA hole transport layer is completely covered, and then spin-coat; the spin-coating speed is 3000 r / min to 6000 r / min, and the time is greater than 0 and less than or equal to 1 min;

[0012] (c) After spin coating, the side of the PTAA hole transport layer coated with the filtrate is cleaned with a cleaning solution to remove unreacted methanol solution of cobalt nitrate hexahydrate and methanol solution of 2-methylimidazole. The cleaning solution is then removed by drying, and the interface modification layer is obtained on the PTAA hole transport layer. The cleaning solution is a conventional cleaning solution used in the art for cleaning the PTAA hole transport layer in perovskite solar cells. Those skilled in the art can select the appropriate solution based on the actual situation.

[0013] More preferably, the methanol solution of cobalt nitrate hexahydrate and the methanol solution of 2-methylimidazole are mixed evenly by stirring for 15 min to 60 min.

[0014] More preferably, the filtration pore size is 0.2μm to 0.8μm, that is, a filter containing a filter membrane with a filtration pore size of 0.2μm to 0.8μm is used for filtration; the filtration pore sizes of commonly used filter membranes in the art are 0.22μm, 0.45μm or 0.8μm.

[0015] More preferably, methanol is used as the cleaning solution for cleaning.

[0016] More preferably, the drying temperature is 60℃~70℃, and the drying time is 1min~3min.

[0017] An inverted perovskite solar cell, wherein the interface modification layer described in this invention is provided between the PTAA hole transport layer and the perovskite active layer in the inverted perovskite solar cell.

[0018] Beneficial effects

[0019] (1) This invention provides a ZIF-67 interface modification layer for an inverted perovskite solar cell, wherein the interface modification material constituting the interface modification layer is a ZIF-67 metal-organic framework material. Since the metal element Co in the ZIF-67 metal-organic framework material can interact with the N element in the PTAA hole transport layer, and the N element in the organic ligands of the ZIF-67 metal-organic framework material can interact with the uncoordinated Pb element in the perovskite absorber layer, the adhesion between the PTAA hole transport layer and the perovskite active layer is improved. Therefore, the ZIF-67 interface modification layer of this invention can improve the interface properties between the PTAA hole transport layer and the perovskite active layer, thereby improving the photoelectric conversion efficiency of inverted rigid and flexible devices in perovskite solar cells, as well as the bending stability of inverted flexible devices.

[0020] (2) This invention provides a method for preparing a ZIF-67 interface modification layer in an inverted perovskite solar cell. The concentrations of cobalt nitrate hexahydrate in the methanol solution of cobalt nitrate hexahydrate and 2-methylimidazole in the methanol solution of 2-methylimidazole, combined with the spin-coating speed and time in step (b), ensure the ZIF-67 metal-organic framework material content on the PTAA hole transport layer. The pore size of the filter in step (a) determines the particle size of the ZIF-67 metal-organic framework material. The content and particle size of the ZIF-67 metal-organic framework material determine the function of the ZIF-67 interface modification layer. Therefore, the ZIF-67 metal-organic framework material prepared by the method described in this invention enables better adhesion between the PTAA hole transport layer and the perovskite active layer, thereby allowing the interface modification layer to better improve the photoelectric conversion efficiency of inverted rigid and flexible devices in perovskite solar cells, as well as the bending stability of inverted flexible devices.

[0021] The present invention can prepare the ZIF-67 interface modification layer through several steps of mixing, filtering, spin coating, washing and drying. The preparation method is simple, low cost, easy to realize industrial production, and has good application prospects.

[0022] (3) The present invention provides a method for preparing the ZIF-67 interface modification layer in an inverted perovskite solar cell. In step (a), the methanol solution of cobalt nitrate hexahydrate and the methanol solution of 2-methylimidazole are mixed evenly by stirring for 15 min to 60 min to obtain the ZIF-67 metal-organic framework material. The method is simple.

[0023] (4) This invention provides a method for preparing the ZIF-67 interface modification layer in an inverted perovskite solar cell. Methanol is used as a cleaning solution for cleaning, which can better remove unreacted methanol solution of cobalt nitrate hexahydrate and methanol solution of 2-methylimidazole.

[0024] (5) The present invention provides an inverted perovskite solar cell, which has good photoelectric conversion efficiency because it has the ZIF-67 interface modification layer described in the present invention, and the inverted flexible device in the inverted perovskite solar cell also has good bending stability. Attached Figure Description

[0025] Figure 1 The image shows the X-ray diffraction (XRD) pattern of the ZIF-67 interface modification layer prepared in Example 2.

[0026] Figure 2 The current density comparison chart shows the perovskite solar cell of Comparative Example 1 and the perovskite solar cells containing the ZIF-67 interface modification layer prepared in Examples 1 to 3, respectively.

[0027] Figure 3 The diagram shows a comparison of the open-circuit voltages of the perovskite solar cell in Comparative Example 1 and the perovskite solar cells containing the ZIF-67 interface modification layers prepared in Examples 1 to 3, respectively.

[0028] Figure 4 The diagram shows a comparison of the fill factor of the perovskite solar cell in Comparative Example 1 and the perovskite solar cells containing the ZIF-67 interface modification layer prepared in Examples 1 to 3, respectively.

[0029] Figure 5 The graph shows a comparison of the photoelectric conversion efficiency of the perovskite solar cell in Comparative Example 1 and the perovskite solar cells containing the ZIF-67 interface modification layer prepared in Examples 1 to 3, respectively.

[0030] Figure 6 The graph shows a comparison of the photoelectric conversion efficiency of the perovskite solar cell of Comparative Example 1 and the perovskite solar cell containing the ZIF-67 interface modification layer prepared in Example 2 at different bending times. Detailed Implementation

[0031] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. Unless otherwise specified, the methods described are conventional methods, and the raw materials described are available from publicly available commercial sources or prepared according to literature.

[0032] Comparative Example 1

[0033] A perovskite solar cell without a ZIF-67 interface modification layer comprises, from top to bottom, a PTAA hole transport layer, a perovskite active layer, a mixed electron transport layer composed of C60 and BCP, and a copper electrode, on a polyethylene naphthalate (PEN) conductive substrate. The specific fabrication steps of the perovskite solar cell are as follows:

[0034] (1) Spin-coat a 4 mg / mL PTAA toluene solution onto a clean PEN conductive substrate at 3000 rpm for 30 s, and then anneal the PEN conductive substrate after spin coating with PTAA in a nitrogen atmosphere at 100 °C for 10 min to form a PTAA hole transport layer with a thickness of 20 nm on the PEN conductive substrate.

[0035] (2) The perovskite precursor solution was spin-coated onto the PTAA hole transport layer at 5000 rpm for 30 s. Five seconds before the end of the spin-coating, it was rinsed with 120 μL of chlorobenzene and then annealed in a nitrogen atmosphere at 100 °C for 60 min. After annealing, a perovskite active layer with a thickness of 500 nm was formed on the PTAA hole transport layer.

[0036] The perovskite precursor solution was prepared by dissolving lead iodide (PbI2), formamidine hydroiodate (FAI), lead bromide (PbBr2), methylamine bromide (MABr), and cesium iodide (CsI) in a mixed solution composed of N,N-dimethylformamide (DMF) and N-methylpyrrolidone (NMP), with a volume ratio of DMF to NMP of 85:15. In the perovskite precursor solution, the concentrations of PbI2, FAI, PbBr2, MABr, and CsI were 1.53 M, 1.40 M, 0.76 M, 0.07 M, and 0.06 M, respectively.

[0037] (3) Under vacuum conditions, a C60 layer with a thickness of 20 nm and a BCP electron transport layer with a thickness of 6 nm are successively deposited on the perovskite active layer, thus forming a C60 and BCP mixed electron transport layer on the perovskite active layer.

[0038] (4) Under vacuum conditions, copper with a thickness of 100 nm is deposited on the C60 and BCP mixed electron transport layer as an electrode to obtain a perovskite solar cell.

[0039] Example 1

[0040] Preparatory steps: Prepare methanol solutions of cobalt nitrate hexahydrate and 2-methylimidazole: Dissolve 0.0625 mmol of cobalt nitrate hexahydrate in 1 L of methanol to prepare a methanol solution of cobalt nitrate hexahydrate, wherein the concentration of cobalt nitrate hexahydrate is 0.0625 mM; dissolve 2.5 mmol of 2-methylimidazole in 1 L of methanol to prepare a methanol solution of 2-methylimidazole, wherein the concentration of 2-methylimidazole is 2.5 mM.

[0041] (a) A methanol solution of cobalt nitrate hexahydrate and a methanol solution of 2-methylimidazole are mixed evenly by stirring to obtain a mixed solution; wherein the stirring time is 15 min; the molar ratio of cobalt nitrate hexahydrate to 2-methylimidazole in the mixed solution is 1:40; the mixed solution is filtered using a filter with a filter membrane having a pore size of 0.8 μm to obtain a filtrate.

[0042] (b) Add the filtrate to the PTAA hole transport layer on the conductive substrate until the PTAA hole transport layer is completely covered, and then spin-coat; the spin-coating speed is 3000 r / min and the spin-coating time is 30 s; the PTAA hole transport layer on the PEN conductive substrate is the same as the PTAA hole transport layer obtained in step (1) of Comparative Example 1.

[0043] (c) After spin coating, the side of the PTAA hole transport layer coated with the filtrate is rinsed with methanol to remove unreacted methanol solutions of cobalt nitrate hexahydrate and 2-methylimidazole. After rinsing, an intermediate is obtained. The intermediate is placed on a heating plate at 70°C and heated for 2 minutes to remove methanol, and the final product is obtained on the PTAA hole transport layer.

[0044] The XRD pattern of the final product was obtained by XRD testing. It can be seen that the fitting curve of the final product is consistent with that of ZIF-67, indicating that the ZIF-67 metal-organic framework material was successfully synthesized on the PTAA hole transport layer in this embodiment, that is, a ZIF-67 interface modification layer was obtained on the PTAA hole transport layer.

[0045] Example 2

[0046] Preparatory steps: Prepare methanol solutions of cobalt nitrate hexahydrate and 2-methylimidazole: Dissolve 0.125 mmol of cobalt nitrate hexahydrate in 1 L of methanol solution to prepare a methanol solution of cobalt nitrate hexahydrate with a concentration of 0.125 mM; dissolve 5 mmol of 2-methylimidazole in 1 L of methanol solution to prepare a methanol solution of 2-methylimidazole with a concentration of 5 mM.

[0047] (a) A methanol solution of cobalt nitrate hexahydrate and a methanol solution of 2-methylimidazole are mixed evenly by stirring to obtain a mixed solution, wherein the stirring time is 30 min; the molar ratio of cobalt nitrate hexahydrate to 2-methylimidazole in the mixed solution is 1:40; the mixed solution is filtered using a filter containing a filter membrane with a pore size of 0.45 μm to obtain a filtrate.

[0048] (b) Add the filtrate to the PTAA hole transport layer on the conductive substrate until the PTAA hole transport layer is completely covered, and then spin-coat; the spin-coating speed is 4500 r / min and the spin-coating time is 30 s; the PTAA hole transport layer on the PEN conductive substrate is the same as the PTAA hole transport layer obtained in step (1) of Comparative Example 1.

[0049] (c) After spin coating, the side of the PTAA hole transport layer coated with the filtrate is rinsed with methanol to remove unreacted methanol solutions of cobalt nitrate hexahydrate and 2-methylimidazole. After rinsing, an intermediate is obtained. The intermediate is then placed on a heating plate at 70°C and heated for 2 minutes to remove methanol, thus obtaining the final product on the PTAA hole transport layer.

[0050] The final product was subjected to XRD testing to obtain the following results: Figure 1 The XRD pattern shown indicates that the final product matches the fitting curve of ZIF-67, demonstrating that the ZIF-67 metal-organic framework material was successfully synthesized on the PTAA hole transport layer in this embodiment, i.e., a ZIF-67 interface modification layer was obtained on the PTAA hole transport layer.

[0051] Example 3

[0052] Preparatory steps: Prepare methanol solutions of cobalt nitrate hexahydrate and 2-methylimidazole: Dissolve 0.25 mmol of cobalt nitrate hexahydrate in 1 L of methanol solution to prepare a methanol solution of cobalt nitrate hexahydrate with a concentration of 0.25 mM; dissolve 10 mmol of 2-methylimidazole in 1 L of methanol solution to prepare a methanol solution of 2-methylimidazole with a concentration of 10 mM.

[0053] (a) A methanol solution of cobalt nitrate hexahydrate and a methanol solution of 2-methylimidazole are mixed evenly by stirring to obtain a mixed solution, wherein the stirring time is 60 min; the molar ratio of cobalt nitrate hexahydrate to 2-methylimidazole in the mixed solution is 1:40; the mixed solution is filtered using a filter containing a filter membrane with a pore size of 0.22 μm to obtain a filtrate.

[0054] (b) Add the filtrate to the PTAA hole transport layer on the conductive substrate until the PTAA hole transport layer is completely covered, and then spin-coat; the spin-coating speed is 6000 r / min and the spin-coating time is 30 s; the PTAA hole transport layer on the PEN conductive substrate is the same as the PTAA hole transport layer obtained in step (1) of Comparative Example 1.

[0055] (c) After spin coating, the side of the PTAA hole transport layer coated with the filtrate is rinsed with methanol to remove unreacted methanol solutions of cobalt nitrate hexahydrate and 2-methylimidazole. After rinsing, an intermediate is obtained. The intermediate is then placed on a heating plate at 70°C and heated for 1 minute to remove methanol. The ZIF-67 interface modification layer is then obtained on the PTAA hole transport layer.

[0056] The XRD pattern of the final product was obtained by XRD testing. It can be seen that the fitting curve of the final product is consistent with that of ZIF-67, indicating that the ZIF-67 metal-organic framework material was successfully synthesized on the PTAA hole transport layer in this embodiment, that is, a ZIF-67 interface modification layer was obtained on the PTAA hole transport layer.

[0057] Test Example 1

[0058] Referring to steps (2) to (4) of the preparation steps of the perovskite solar cell without the ZIF-67 interface modification layer in Comparative Example 1, a perovskite active layer, a C60 and BCP electron transport layer and a copper electrode were sequentially prepared on the ZIF-67 interface modification layer prepared in Examples 1 to 3, respectively, to obtain perovskite solar cells containing the ZIF-67 interface modification layer prepared in Examples 1 to 3.

[0059] Then, the perovskite solar cell of Comparative Example 1 and the perovskite solar cells containing the ZIF-67 interface modification layers prepared in Examples 1-3 were subjected to JV performance tests using a solar simulator and a Keithley source meter under a set temperature of 25°C, a set relative humidity of 30%, and one day of sunlight irradiation. The test results are shown in […]. Figures 2-5 The test data were then summarized in Table 1.

[0060] Table 1

[0061]

[0062] according to Figures 2-5As shown in Table 1, the average current density, average open-circuit voltage, average fill factor, and average photoelectric conversion efficiency of the perovskite solar cells containing the ZIF-67 interface modification layers prepared in Examples 1 to 3 are all higher than those of the perovskite solar cell in Comparative Example 1, and the performance data of Example 2 is the highest. In summary, the ZIF-67 interface modification layers prepared in Examples 1 to 3 are beneficial to improving the performance of inverted perovskite solar cells.

[0063] Furthermore, using Vienna Ab initio Simulation Package (VASP) code software, theoretical simulation calculations yielded an adhesion energy of 0.033 J / m between the PTAA hole transport layer and the perovskite active layer. 2 The adhesion energy between the PTAA hole transport layer and ZIF-67 is 0.060 J / m. 2 The adhesion energy between ZIF-67 and the perovskite active layer is 0.116 J / m. 2 Therefore, ZIF-67 improves the adhesion of the PTAA hole transport layer and the perovskite active layer.

[0064] Inverted rigid perovskite solar cells and inverted flexible perovskite solar cells differ only in their substrates; their device structures and materials, except for the substrate, are completely identical. Therefore, ZIF-67 metal-organic framework materials can also improve the photoelectric conversion efficiency of inverted rigid perovskite solar cells.

[0065] Test Example 2

[0066] Under the test conditions of Test Example 1, the perovskite solar cell of Comparative Example 1 and the perovskite solar cell containing the ZIF-67 interface modification layer prepared in Example 2 were bent with a radius of curvature of 6 mm. The photoelectric conversion efficiency of the two cells was tested after 1, 10, 100, and even 1000 bends. The test results are shown in […]. Figure 6 When bent 10 times, the perovskite solar cell containing the ZIF-67 interface modification layer prepared in Example 2 showed a significantly higher photoelectric conversion efficiency than the perovskite solar cell in Comparative Example 1. When bent 1000 times, the photoelectric conversion efficiency of the perovskite solar cell in Comparative Example 1 remained at 63%, making further bending tests impossible. However, the perovskite solar cell containing the ZIF-67 interface modification layer prepared in Example 2 maintained a photoelectric conversion efficiency of 81%, and even after 10,000 bends, its photoelectric conversion efficiency remained above 78%. These results indicate that the ZIF-67 interface modification layer prepared in Example 2 is beneficial for improving the bending stability of inverted flexible perovskite solar cells.

[0067] The perovskite solar cells containing the ZIF-67 interface modification layers prepared in Examples 1 and 3 also exhibit good bending stability; that is, the perovskite solar cells can maintain good photoelectric conversion efficiency even after being bent up to 1000 or even 10000 times. In summary, the ZIF-67 interface modification layer prepared by the method described in this invention is beneficial for improving the bending stability of inverted flexible perovskite solar cells.

[0068] This invention includes, but is not limited to, the above embodiments. Any equivalent substitutions or partial improvements made under the spirit and principles of this invention shall be considered within the scope of protection of this invention.

Claims

1. A ZIF-67 interface modification layer in an inverted perovskite solar cell, characterized in that: The interface modification layer is located between the PTAA hole transport layer and the perovskite active layer in the inverted perovskite solar cell; the modification material constituting the interface modification layer is ZIF-67 metal-organic framework material; The interface modification layer is prepared by the following method: (a) A methanol solution of cobalt nitrate hexahydrate and a methanol solution of 2-methylimidazole are mixed thoroughly to obtain a mixed solution; wherein the concentration of cobalt nitrate hexahydrate in the methanol solution of cobalt nitrate hexahydrate is 0.0625 mM ~ 0.25 mM, the concentration of 2-methylimidazole in the methanol solution of 2-methylimidazole is 2.5 mM ~ 10 mM, and the molar ratio of cobalt nitrate hexahydrate to 2-methylimidazole in the mixed solution is 1:40; the mixed solution is filtered to obtain a filtrate; the pore size of the filtration is greater than 0 and less than or equal to 0.8 μm; (b) Add the filtrate to the PTAA hole transport layer on the conductive substrate until the PTAA hole transport layer is completely covered, and then spin coat; the spin coating speed is 3000 r / min to 6000 r / min, and the time is greater than 0 and less than or equal to 1 min; (c) After spin coating is completed, the side of the PTAA hole transport layer coated with the mixed solution is cleaned with cleaning solution and dried to obtain the interface modification layer on the PTAA hole transport layer.

2. The ZIF-67 interface modification layer in an inverted perovskite solar cell according to claim 1, characterized in that: The filter has a pore size of 0.2μm to 0.8μm.

3. The ZIF-67 interface modification layer in an inverted perovskite solar cell according to claim 1 or 2, characterized in that: The methanol solution of cobalt nitrate hexahydrate and the methanol solution of 2-methylimidazole were mixed evenly by stirring for 15 min to 60 min.

4. The ZIF-67 interface modification layer in an inverted perovskite solar cell according to claim 1 or 2, characterized in that: Methanol was used as the cleaning solution for cleaning.

5. The ZIF-67 interface modification layer in a reverse perovskite solar cell according to claim 1 or 2, characterized in that: The drying temperature is 60 °C to 70 °C, and the drying time is 1 min to 3 min.

6. The ZIF-67 interface modification layer in an inverted perovskite solar cell according to claim 2, characterized in that: The methanol solution of cobalt nitrate hexahydrate and the methanol solution of 2-methylimidazole were mixed evenly by stirring for 15 min to 60 min; methanol was used as the cleaning solution for cleaning; the drying temperature was 60 ℃ to 70 ℃ and the drying time was 1 min to 3 min.

7. A reverse perovskite solar cell, characterized in that: An interface modification layer as described in any one of claims 1 to 6 is provided between the PTAA hole transport layer and the perovskite active layer in the inverted perovskite solar cell.