Focused energy beam device

Abstract

The differential exhaust device sets the processing space to a high vacuum degree, wherein the differential exhaust device comprises: a displacement drive unit, which can displace a head or a processed substrate to adjust the parallelism and distance between the processed surface and the opposing surface of the head; a gap measuring unit, which is respectively arranged at at least three positions along the periphery of the opposing surface of the head and can detect the distance between the opposing surface and the processed surface; and a gap control unit, which controls the displacement drive unit based on the distance information between the opposing surface and the processed surface detected by the gap measuring unit, so that the opposing surface and the processed surface become parallel at a specified distance.

Description

Technical Field

[0001] The invention relates to a differential exhaust device and a focused energy beam device. Background Art

[0002] The focused energy beam device is applicable to a focused ion beam device, an electron beam exposure device, a scanning electron microscope (SEM), etc. A focused ion beam device is a device that scans a focused ion beam on the surface of a sample and detects secondary particles (secondary electrons, secondary ions, etc.) emitted from the sample, thereby being able to observe a microscope image and process the sample surface. Specifically, a focused ion beam device has functions such as sample observation, etching (sputtering), and CVD (chemical vapor deposition).

[0003] The focused ion beam device is adapted to Fig.15 The repair device 100 is as shown. The repair device 100 is configured such that a focused ion beam optical system 101, a supply nozzle 102 for supplying CVD (Chemical Vapor Deposition) gas, a secondary particle detection unit 103, and a substrate support plate 105 for mounting a substrate to be repaired 104 are arranged in a vacuum chamber 106. In the repair device 100, the secondary particle detection unit 103 is used to detect secondary electrons or secondary ions emitted from the substrate to be repaired by irradiating the substrate surface with an ion beam, and a two-dimensional distribution is solved, thereby making a microscope image of the substrate surface.

[0004] In the repair device 100, an ion beam is irradiated to a necessary part of the surface of the substrate to be repaired based on the information from the microscope image, thereby enabling processing and observation. In addition, by simultaneously supplying CVD gas from the supply nozzle 102, local film formation can be performed for processing and repair. When the vacuum chamber 106 is low vacuum, residual gas molecules collide with ions, making it impossible for the ions to travel in a straight line, so the vacuum chamber 106 needs to be set to high vacuum.

[0005] In recent years, the panel size of thin displays (FPD: Flat Panel Display) such as liquid crystal displays (LCD) and organic EL displays has been increasing. Therefore, in the above-mentioned repair device, there is a problem that a large vacuum chamber is required.

[0006] As a prior art to solve the above-mentioned problem, a processing device is disclosed which is provided with a local exhaust device (hereinafter also referred to as a differential exhaust device) for locally forming a vacuum space on the surface of a substrate to be corrected, and does not require a vacuum chamber (for example, see Patent Document 1). The processing device is provided with a local exhaust device integrally at the front end (lower end) of a focused ion beam column, and the local exhaust device has a function of floating the focused ion beam column relative to the substrate to be corrected.

[0007] Prior Art Literature

[0008] Patent Literature

[0009] Patent Document 1: Japanese Patent No. 5114960 Summary of the invention

[0010] Problems to be solved by the present invention

[0011] In the manufacture of FPD, mother glass with multiple panels is used. Increasing the number of panels (number of layouts) on each mother glass is a common method for improving productivity. As the mother glass becomes larger, the photomask will inevitably become larger. By the way, in recent years, one side of the mother glass has reached a length of about 3 meters. Therefore, in the photomask, undulations and warping occur along with the increase in size.

[0012] Fig.16 FIG. 2 shows a process of repairing a large photomask 201 using a repair device 200 having a local exhaust device 203 at the front end of a focused ion beam column 202. Fig.16 As shown, there is a problem that due to the undulation and warping of the photomask 201, it is difficult for the lower end face of the local exhaust device 203 to maintain a parallel opposing state with respect to the surface of the photomask 201 under the force of the jet air. Therefore, at the outer periphery of the lower end face of the local exhaust device 203, the difference between the gap G1 of the near part and the gap G2 of the far part relative to the surface of the photomask 201 becomes large, and there is a problem that the internal vacuum state cannot be maintained by using the local exhaust (differential exhaust). Therefore, there is a problem that the surface of the photomask 201 cannot be well observed or the surface of the photomask 201 cannot be corrected. In addition, in the existing repair device 200, the gap G3 between the center of the lower end face of the local exhaust device 203 through which the optical axis of the focused ion beam column 202 passes and the photomask 201 is easy to change. If this gap G3 changes, it will affect the film forming conditions and cause uneven film forming.

[0013] The present invention is made in view of the above-mentioned problems, and its purpose is to provide a differential exhaust device that can reliably maintain the differential exhaust function even for a processed substrate (observed substrate, corrected substrate, etc.) with warping and undulation, and a focused energy beam device that can perform good processing.

[0014] Solutions to Solve Problems

[0015] In order to solve the above-mentioned problems and achieve the purpose, the differential exhaust device of the scheme of the present invention includes a head, which can be relatively moved with respect to the processed surface of the processed substrate in a manner opposite to any area of ​​the processed surface, and a plurality of annular grooves are formed on the opposing surface of the head that is opposite to the processed surface, and the plurality of annular grooves surround the center of the head, and an opening is provided in the inner area of ​​the innermost annular groove of the plurality of annular grooves of the head, and the opening forms a processing space capable of processing the processed surface, and at least one of the plurality of annular grooves is connected to a vacuum pump, and when the opposing surface is opposite to the processed surface, a vacuum pump is supplied from the opposing surface to the processed surface. The processing space is set to a high vacuum degree by the suction effect of the annular groove connected to the vacuum pump. The differential exhaust device is characterized in that it also includes: a displacement drive unit, which can displace the head or the processed substrate to adjust the parallelism and distance between the processed surface and the opposing surface; a gap measuring unit, which is respectively arranged at at least three positions along the periphery of the opposing surface of the head and can detect the distance between the opposing surface and the processed surface; and a gap control unit, which controls the displacement drive unit based on the distance information between the opposing surface and the processed surface detected by the gap measuring unit, so that the opposing surface and the processed surface become parallel at a specified distance.

[0016] As the above aspect, it is preferable that the gap measuring unit detects pressure of a space between the gap measuring unit and the processed surface, and the gap control unit controls the displacement driving unit based on information on the pressure.

[0017] As the above scheme, it is preferred that the processed substrate is formed into a rectangle having vertical and horizontal sides in the X-Y direction, the head can be relatively moved along the X-Y direction of the processed substrate, and the gap measuring part is arranged at four locations outside the annular groove formed on the outermost side in the head, and the group of the gap measuring parts at the four locations is composed of two pairs, one pair is arranged on both sides of the X direction with the center of the opening on the opposing surface as the center, and the other pair is arranged on both sides of the Y direction with the center of the opening as the center.

[0018] As the above scheme, the gap measuring part is preferably composed of a laser displacement meter, which is set to be offset in a direction farther away from the processed surface than the opposing surface, so that the distance between the laser displacement meter and the processed surface becomes a high-precision measurement area of ​​the laser displacement meter.

[0019] As the above aspect, it is preferable that the differential exhaust device includes an optical microscope for detecting an alignment mark formed on the substrate to be processed.

[0020] As the above aspect, it is preferable that the differential exhaust device includes an observation microscope spaced apart from the head by an offset distance, and the observation microscope is used to observe a processed region of the processed substrate.

[0021] As the above aspect, it is preferable that the outermost annular groove among the plurality of annular grooves is connected to a discharge pump for supplying an inert gas, and the inert gas is blown from the annular groove toward the substrate to be processed to form a gas curtain.

[0022] As the above-mentioned scheme, it is preferred that a floating pad is arranged along the outer peripheral edge of the opposing surface of the head and on the outside of the opposing surface and is integrally provided with the head, and the floating pad is connected to a spray pump that supplies inert gas. The floating pad blows inert gas toward the processed surface to form an air curtain and applies force to the head in a direction away from the processed surface.

[0023] A focused energy beam device according to another embodiment of the present invention comprises: the above-mentioned differential exhaust device; and a focused energy beam columnar body, which is arranged on the side of the head opposite to the opposing surface, and has a lens barrel connected to the opening portion and capable of communicating with the processing space, and a focused energy beam system is built into the lens barrel so that the focused energy beam is emitted through the opening portion. The focused energy beam device is characterized in that it comprises: a displacement drive unit, which can displace the head or the processed substrate to adjust the parallelism and distance between the processed surface and the opposing surface; a gap measuring unit, which is arranged at at least three locations along the periphery of the opposing surface of the head and can detect the distance between the opposing surface and the processed surface; and a gap control unit, which controls the displacement drive unit based on the distance information between the opposing surface and the processed surface detected by the gap measuring unit, so that the opposing surface and the processed surface become parallel at a specified distance.

[0024] As the above aspect, it is preferable that the gap measuring unit detects pressure of a space between the gap measuring unit and the processed surface, and the gap control unit controls the displacement driving unit based on information on the pressure.

[0025] As the above scheme, it is preferred that the processed substrate is formed into a rectangle having vertical and horizontal sides in the X-Y direction, the head can be moved along the X-Y direction of the processed substrate, and the gap measuring part is arranged at four locations outside the annular groove formed on the outermost side in the head, and the group of the gap measuring parts at the four locations is composed of two pairs, one pair is arranged on both sides of the X direction with the center of the opening on the opposing surface as the center, and the other pair is arranged on both sides of the Y direction with the center of the opening as the center.

[0026] As the above scheme, the gap measuring part is preferably composed of a laser displacement meter, which is set to be offset in a direction farther away from the processed surface than the opposing surface, so that the distance between the laser displacement meter and the processed surface becomes a high-precision measurement area of ​​the laser displacement meter.

[0027] As the above aspect, it is preferable that the focused energy beam device includes an optical microscope that detects an alignment mark formed on the substrate to be processed.

[0028] As the above aspect, it is preferred that the focused energy beam device includes an observation microscope at an offset distance near the head portion, and the observation microscope is used to observe a processed region of the processed substrate.

[0029] As the above aspect, it is preferable that the outermost annular groove among the plurality of annular grooves is connected to a discharge pump for supplying an inert gas, and the inert gas is blown from the annular groove toward the substrate to be processed to form a gas curtain.

[0030] As the above-mentioned scheme, it is preferred that a floating pad is arranged along the outer peripheral edge of the opposing surface of the head and on the outside of the opposing surface and is integrally provided with the head, and the floating pad is connected to a spray pump that supplies inert gas. The floating pad blows inert gas toward the processed surface to form an air curtain and applies force to the head in a direction away from the processed surface.

[0031] As the above scheme, it is preferred that a microchannel plate is arranged in the front end portion of the lens barrel, an energy beam passage port for the focused energy beam to pass through is formed in the microchannel plate, and the periphery of the energy beam passage port of the microchannel plate is used as a detection portion capable of capturing secondary charged particles generated from the processed substrate.

[0032] As the above scheme, the focused energy beam device preferably includes a plurality of focused energy beam columns having the differential exhaust device provided at the front end, and each of the focused energy beam columns is arranged to face a region dividing the processed surface of the processed substrate into a plurality of regions.

[0033] As the above aspect, it is preferable that the position of the substrate to be processed is fixed so that the focused energy beam column having the differential exhaust device provided at the front end thereof can move in the XY direction relative to the substrate to be processed.

[0034] Effects of the Invention

[0035] According to the present invention, a differential exhaust device that can reliably maintain a differential exhaust function even for a processed substrate with warpage or undulations and a focused energy beam device that can perform good processing can be realized. Therefore, according to the present invention, a high vacuum in the processing space in the head can be reliably maintained, thereby improving the quality of the processing operation in the processing space. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 It is a cross-sectional explanatory diagram of a focused ion beam device according to a first embodiment of the present invention.

[0037] Figure 2 It is a bottom view of the differential exhaust device included in the focused ion beam apparatus according to the first embodiment of the present invention.

[0038] Figure 3 This is a plan view illustrating the relationship between a head and a substrate support table in the focused ion beam device according to the first embodiment of the present invention.

[0039] Figure 4 This is a flowchart showing the control and operation of the focused ion beam device 1 according to the first embodiment of the present invention.

[0040] Figure 5 It is a cross-sectional explanatory diagram of a focused ion beam device according to Modification 1 of the first embodiment of the present invention.

[0041] Figure 6 It is a bottom view of a differential pumping device included in a focused ion beam apparatus according to a second modification of the first embodiment of the present invention.

[0042] Figure 7 yes Figure 8 The VII-VII cross-sectional view is a cross-sectional view of the main parts of the focused ion beam device according to the third modification of the first embodiment of the present invention.

[0043] Figure 8 It is a bottom view of a differential exhaust device included in a focused ion beam apparatus according to Modification 3 of the first embodiment of the present invention.

[0044] Fig. 9 It is a cross-sectional view of the main parts of the focused ion beam device according to the first embodiment of the present invention.

[0045] Fig.10It is a bottom view explanatory diagram showing a differential exhaust device included in a focused ion beam apparatus according to a fifth modification of the first embodiment of the present invention.

[0046] Fig.11 It is an explanatory diagram schematically showing a focused ion beam device according to a second embodiment of the present invention.

[0047] Fig.12 It is an explanatory diagram schematically showing a focused ion beam device according to Modification 1 of the second embodiment of the present invention.

[0048] Fig.13 It is a cross-sectional view of the main parts showing a focused ion beam device according to a third embodiment of the present invention.

[0049] Fig.14 It is a diagram for explaining the structure of a focused ion beam device according to a fourth embodiment of the present invention.

[0050] Fig.15 It is a diagram for explaining the structure of a focused ion beam device according to a fifth embodiment of the present invention.

[0051] Fig.16 It is a diagram for explaining the structure of a focused ion beam device according to a sixth embodiment of the present invention.

[0052] Fig.17 It is a diagram for explaining the structure of a focused ion beam device according to the seventh embodiment of the present invention.

[0053] Fig.18 This is an explanatory diagram showing a conventional repair device having a focused ion beam optical system.

[0054] Fig.19 This is an explanatory diagram showing the process of repairing a large photomask using a conventional repair device. DETAILED DESCRIPTION

[0055] The focused energy beam device of the present invention can be applied as a focused ion beam device as a repair device, an electron beam exposure device having a function of directly exposing the processed substrate, a scanning electron microscope capable of observing the surface state of the processed substrate, etc., depending on the type of the emitted energy beam and the purpose of the processing performed on the processed substrate. In addition, the differential exhaust device of the present invention is provided in the focused energy beam device. Hereinafter, the focused energy beam device as an embodiment of the present invention is described as a focused ion beam device that is applied to emit an ion beam to the processed substrate.

[0056] The following is a detailed description of the differential exhaust device and the focused energy beam device according to the embodiment of the present invention based on the accompanying drawings. It should be noted that the accompanying drawings are schematic, and the dimensions, ratios, numbers, shapes, etc. of the components are different from the actual ones. In addition, the drawings also include parts with different dimensional relationships, ratios, and shapes.

[0057] [First embodiment]

[0058] (Brief Structure of Focused Ion Beam Device)

[0059] Figure 1 The schematic structure of the focused ion beam device 1 of the first embodiment is shown. The focused ion beam device 1 includes a differential exhaust device 2, a focused ion beam column (hereinafter also referred to as a FIB column) 3 as a focused energy beam column, a substrate support 4, and four laser displacement meters 5A, 5B, 5C, and 5D as gap measuring units (see FIG. Figure 2 ), displacement driving unit 6 and gap control unit 7.

[0060] The substrate support table 4 supports a substrate 8 to be processed while placing the substrate 8 thereon. In the present embodiment, a large photomask is suitable as the substrate 8 to be processed. The substrate support table 4 is a worktable that can be moved in the X-Y direction. The displacement drive unit 6 has a function of freely changing the inclination of the substrate support table 4. Specifically, as the displacement drive unit 6, for example, a lifting drive mechanism may be provided under a plurality of locations (for example, four corners) of the substrate support table 4. By utilizing these lifting drive mechanisms to adjust the height of various locations of the substrate support table 4, the substrate 8 to be processed can be changed to a desired inclination state.

[0061] (Structure of differential exhaust device)

[0062] Below, use Figure 1 and Figure 2 The structure of the differential exhaust device 2 is described below. It should be noted that: Figure 2 It is a bottom view of the differential exhaust device 2. The differential exhaust device 2 includes a head 9, and a vacuum pump and a discharge pump (not shown).

[0063] The head 9 is formed of a disk-shaped metal plate having an area extremely smaller than that of the processing surface 8A of the processing substrate 8. The head 9 can face any area of ​​the processing surface 8A by the substrate support 4 moving in the XY direction.

[0064] like Figure 2As shown, four annular grooves 10A, 10B, 10C, and 10D are formed in a concentric configuration (arranged on concentric circles) on the opposing surface (lower surface) 9A of the head 9. An opening 11 for forming a processing space Sp is provided in the inner area of ​​the innermost annular groove 10A among the multiple annular grooves 10A, 10B, 10C, and 10D of the head 9, in which the processed surface 8A of the processed substrate 8 can be processed (film forming processing based on ion beam irradiation). The FIB column 3 described later is connected to the opening 11 in a connected manner. It should be noted that in this description, the groove formed in a manner surrounding the center of the head 9 is referred to as an "annular groove", which is a definition including a circular annular groove, a square annular groove, and also includes a C-shaped groove in which a part of the ring is missing, a plurality of grooves arranged intermittently in an annular shape, and the like.

[0065] At least one (three in the present embodiment) of the plurality of annular grooves 10A, 10B, 10C, 10D is connected to a vacuum pump (not shown) via a connecting pipe 12. The innermost annular groove 10A is connected to a deposition gas supply source (not shown) that supplies deposition gas (deposition gas, CVD gas) via a connecting pipe 13. The head 9 has a function of making the processing space Sp a high vacuum by utilizing the air suction effect from the annular grooves 10B, 10C, 10D in a state where the opposing surface 9A is opposed to the processed surface 8A. In addition, the head 9 reliably supplies deposition gas from the innermost annular groove 10A to the processing space Sp adjusted to a high vacuum, thereby enabling CVD film formation to be performed on the area of ​​the processed surface 8A opposite to the opening 11.

[0066] Incidentally, in the present embodiment, by setting the substantial gap Gg between the facing surface 9A of the head 9 and the processed surface 8A to about 30 μm while the facing surface 9A and the processed surface 8A are kept parallel, the internal vacuum state can be maintained without destroying the high vacuum state of the processing space Sp. If the head 9 is tilted relative to the processed surface 8A so that a part of the outer peripheral portion of the head 9 is separated from the processed surface 8A and the gap exceeds, for example, 40 μm, the differential exhaust function can no longer be used to maintain the local vacuum state at this location.

[0067] like Figure 2 As shown in FIG. 1 , the head 9 has light-transmitting openings 14A, 14B, 14C, and 14D formed at four locations along the periphery of the facing surface 9A in the outermost region of the annular groove 10D. Transparent light-transmitting plates 15A, 15B, 15C, and 15D are embedded in these light-transmitting openings 14A, 14B, 14C, and 14D from the opening end side opposite to the facing surface 9A.

[0068] (Laser displacement meter)

[0069] The laser displacement meters 5A, 5B, 5C, and 5D measure distance (detect displacement) by, for example, a combination of a light projecting element and a linear image sensor (not shown). Generally, it is known that the measurement accuracy of a laser displacement meter decreases when the displacement is less than 30 μm.

[0070] In this embodiment, the laser displacement meters 5A, 5B, 5C, 5D are disposed on the light-transmitting plates 15A, 15B, 15C, 15D. The laser displacement meters 5A, 5B, 5C, 5D are set to detect the distance (hereinafter referred to as the management gap) Gm between the lower surface of the light-transmitting plates 15A, 15B, 15C, 15D and the processed surface 8A through the light-transmitting openings 14A, 14B, 14C, 14D. That is, Figure 1 As shown, the actual gap Gg can be obtained by detecting the management gap Gm and subtracting the offset gap Gos from the opposing surface 9A to the light-transmitting plate 15A (15B, 15C, 15D) from the management gap Gm. A gap longer than 30 μm is preferred as the management gap Gm, so that detection can be performed in an area with good measurement accuracy of the laser displacement meter.

[0071] (Focused ion beam column: FIB column)

[0072] FIB columnar body 3 is disposed on the surface side (upper surface side) opposite to facing surface 9A of head 9 , and is connected to opening 11 of head 9 in a state where the front end portion is embedded in a buried manner.

[0073] The FIB column 3 includes a lens barrel 16 connected to the processing space Sp and a focused ion beam optical system 17 built into the lens barrel 16. From the front end of the FIB column 3, an ion beam Ib can be emitted toward the processing surface 8A of the processing substrate 8 in a manner passing through the opening 11. It should be noted that in the present embodiment, the front end of the lens barrel 16 is formed into a shape that becomes thinner toward the front end.

[0074] The focused ion beam optical system 17 includes an ion source 36 for generating an ion beam Ib, a focusing lens 37 for focusing the generated ion beam Ib, a deflector 38 for scanning the ion beam Ib, and an object electrostatic lens 39 for focusing the ion beam Ib. As the ion source 36, a gallium (Ga) ion source is mainly used, but a rare gas ion source can also be used by inductively coupling plasma (ICP) or gas electric field ionization of a rare gas such as argon (Ar). As the lens of the ion beam Ib, an electric field lens is preferably used.

[0075] As a deposition gas for CVD, W(CO) 6 can be used. When W(CO) 6 near a substrate is irradiated with a focused ion beam, it is decomposed into W and CO, and W is deposited on the substrate.

[0076] A lifting mechanism 18 is provided at the upper end of the FIB column 3 to lift the FIB column 3 and the differential exhaust device 2. The upper portion of the lifting mechanism 18 is supported on the support frame 20 through the support portion 19. The lifting mechanism 18 has the function of lifting the FIB column 3 and the differential exhaust device 2 to pull the focused ion beam device 1 away from the substrate 8 to be processed. It should be noted that in the present embodiment, the lifting mechanism 18 is provided at the upper portion of the FIB column 3, but the support frame 20 side may also have a lifting function.

[0077] (Gap Control Unit)

[0078] The gap control unit 7 outputs a drive control signal to the displacement drive unit 6 based on the detection value (distance information) of the management gap Gm detected by the laser displacement meters 5A, 5B, 5C, and 5D, so that the opposing surfaces 9A at each part of the head 9 corresponding to each laser displacement meter 5A, 5B, 5C, and 5D are parallel to the processed surface 8A with the actual gap Gg therebetween being separated by a prescribed uniform distance.

[0079] (Control and Operation of Focused Ion Beam Device of First Embodiment)

[0080] Hereinafter, in the focused ion beam device 1 of the present embodiment, an operation of arranging the processing surface 8A of the processing substrate 8 in parallel with the facing surface 9A of the head 9 while maintaining a predetermined gap will be described. Figure 3 As shown in FIG. 1 , in this embodiment, the displacement drive unit 6 is configured by providing four displacement drive units (denoted by E, F, G, and H) under the substrate support table 4. The four displacement drive units E, F, G, and H are arranged in a square shape as shown by black circles. The diagonal distance of the square is set to 2L. The directions of the sides of the rectangle of the substrate support table 4 are set to the X direction and the Y direction. In addition, the laser displacement meters 5A, 5B, 5C, and 5D are arranged as shown in FIG. Figure 2 That is, four laser displacement meters 5A, 5B, 5C, and 5D are arranged on a concentric circle of radius r of the circular head 9. Here, the coordinates of the center of the head 9 are set to (hx, hy) and the radius of the head 9 is set to r.

[0081] Next, use Figure 4 The control and operation of the focused ion beam device 1 are described with reference to the flowchart shown in FIG. It should be noted that the control described below can be applied to the case of observing, etching (sputtering), and CVD (chemical vapor deposition) of the substrate 8 to be processed.

[0082] First, in the focused ion beam device 1, the substrate 8 to be processed is placed on the substrate support table 4 and moved so that the predetermined processed portion is located below the head 9. In this state, the gap control unit 7 drives the lifting mechanism 18 to move the facing surface 9A of the head 9 to a predetermined height position above the processed surface 8A.

[0083] Next, the following control is performed.

[0084] (1) A target value h of the gap between the facing surface 9A of the head 9 and the processed surface 8A is set (step S1).

[0085] (2) The gaps between the laser displacement meters 5A, 5B, 5C, and 5D and the processed surface 8A are measured (step S2). The measured values ​​of the displacements are denoted as hA, hB, hC, and hD.

[0086] (3) The inclination mx of the head 9 in the X-axis direction relative to the processing surface 8A is calculated as follows (step S3).

[0087] mx=(hD-hB) / 2r

[0088] (4) The heights of the displacement drive parts F and the displacement drive parts H arranged along the X direction are displaced by the following values ​​calculated in consideration of the above-mentioned inclination mx (step S4).

[0089] ΔhF=-(L+hx)mx

[0090] ΔhH=(L-hx)mx

[0091] (5) The inclination my of the head 9 in the y-axis direction relative to the processed surface 8A is calculated (step S5).

[0092] my=(hA-hC) / 2r

[0093] (6) The heights of the displacement drive units A and C arranged along the Y direction are displaced by the following values ​​(step S6).

[0094] ΔhA=(L-hy)my

[0095] ΔhC=-(L+hy)my

[0096] (7) The gaps between the laser displacement meters 5A, 5B, 5C, and 5D and the processed surface 8A are measured again (step S7). The measured values ​​of the gaps are denoted as hA, hB, hC, and hD.

[0097] (8) The average value hav of the gaps at the four locations where the four laser displacement meters 5A, 5B, 5C, and 5D are located is calculated, and the differences between hav and hA, hB, hC, and hD are calculated respectively (step S8).

[0098] When the difference is large at any one of the differences (measurement positions), that is, when there is only one portion that deviates greatly from the average value hav, the process returns to step S3 (step S9).

[0099] (9) In step S9 , when the deviation from the average value hav at any part is small, the displacement drive units E, F, G, and H are displaced by h−hav, and the control is terminated (step S10 ).

[0100] The above control is based on the detection information from the laser displacement meters 5A, 5B, 5C, 5D, and the gap control unit 7 controls the displacement driving units E, F, G, and H. It should be noted that in the focused ion beam device 1, such control is performed when the substrate 8 to be processed is moved so that the processed portion faces the facing surface 9A of the head 9.

[0101] (Effects of the Focused Ion Beam Device of the First Embodiment)

[0102] According to the focused ion beam device 1 of the first embodiment of the present invention, even if the processed substrate 8 such as a photomask is enlarged and undulations and warping occur on the processed substrate 8, the head 9 can remain parallel to the processed surface 8A and at the same time maintain the actual gap Gg at the desired gap.

[0103] In addition, even if the substrate 8 to be processed moves, the facing surface 9A of the head 9 can follow the substrate 8 to be processed while being kept parallel to the substrate 8 to be processed. Therefore, the vacuum can be prevented from being destroyed at the outer periphery of the head 9, and the vacuum state between the head 9 and the substrate 8 to be processed can be stably maintained. Therefore, the repair process such as CVD film formation in the processing space Sp can be reliably performed.

[0104] In the focused ion beam device 1 of the present embodiment, the laser displacement meters 5A, 5B, 5C, and 5D are arranged so that the line connecting the laser displacement meter 5A and the laser displacement meter 5C is orthogonal to the line connecting the laser displacement meter 5B and the laser displacement meter 5D. That is, the group of the laser displacement meters 5A, 5B, 5C, and 5D at four locations is composed of two pairs: a pair arranged on both sides of the X direction with the center of the opening 11 as the center, and a pair arranged on both sides of the Y direction with the center of the opening 11 as the center.

[0105] Therefore, when the processed substrate 8 is moved in the X-Y direction, even if the head 9 is located at the edge of the processed surface 8A and one laser displacement meter is separated from the processed surface 8A, as long as the three laser displacement meters are opposite to the processed surface 8A, the displacement drive control can be performed based on the detection amount of the three laser displacement meters. Therefore, in the focused ion beam device 1, the edge of the processed substrate 8 can also be processed. That is, in the focused ion beam device 1, there is an effect that a wide range of the processed substrate 8 can be effectively processed.

[0106] In the focused ion beam device 1 of the present embodiment, the laser displacement meters 5A, 5B, 5C, and 5D are arranged in a direction farther from the processing surface 8A than the opposing surface 9A, and are offset in such a manner that the distance between the laser displacement meters 5A, 5B, 5C, and 5D and the processing surface 8A becomes a high-precision measurement area of ​​the laser displacement meters 5A, 5B, 5C, and 5D. Therefore, the substantial gap Gg between the processing surface 8A and the opposing surface 9A at the four locations where the laser displacement meters 5A, 5B, 5C, and 5D are arranged can be accurately determined.

[0107] In this embodiment, the front end of the lens barrel 16 is made thinner, so that Figure 1 As shown in the figure, the innermost annular groove 10A of the facing surface 9A of the head 9 of the differential exhaust device 2 can be brought closer to the ion beam Ib. Therefore, the deposition gas can be reliably introduced into the processing space Sp, and a stable CVD film can be reliably produced. In addition, by making the front end of the lens barrel 16 thinner, the plurality of annular grooves 10A, 10B, 10C, and 10D can be brought closer to the vicinity of the small opening 11, and the differential exhaust device 2 can be made compact.

[0108] (Variation 1 of the First Embodiment)

[0109] Figure 5 The focused ion beam device 1A shown is a modification 1 of the focused ion beam device 1 of the first embodiment described above. The focused ion beam device 1A is provided with four displacement drive units 6A on the FIB column 3. The four displacement drive units 6A are incorporated into a column suspension device provided on the upper portion of the FIB column 3. A lifting mechanism 18 similar to that of the first embodiment is provided on the upper portion of the displacement drive unit 6A. The four displacement drive units 6A are arranged directly above the laser displacement meters 5A, 5B, 5C, and 5D.

[0110] The displacement drive unit 6A is a mechanism for changing the tilt state of the FIB column 3 and the differential exhaust device 2. In this modification 1, unlike the first embodiment described above, the displacement drive unit 6 is not provided on the substrate support table 4 side, but the four displacement drive units 6A provided on the FIB column 3 side are used to adjust the parallelism between the facing surface 9A on the differential exhaust device 2 side and the processed surface 8A.

[0111] (Control and Operation of Modification 1 of First Embodiment)

[0112] (1) A target value h of the gap between the facing surface 9A of the head 9 and the processed surface 8A is set.

[0113] (2) The gaps between the laser displacement meters 5A, 5B, 5C, and 5D and the processed surface 8A are measured. The measured values ​​of the displacements are denoted as hA, hB, hC, and hD.

[0114] (3) The inclination mx of the head 9 in the X-axis direction relative to the processed surface 8A is calculated as shown in the following formula.

[0115] mx=(hD-hB) / 2r

[0116] (4) The heights of the pair of displacement drive units 6A arranged along the X direction are displaced by the following values ​​calculated in consideration of the above-mentioned inclination mx.

[0117] ΔhF=-(L+hx)mx

[0118] ΔhH=(L-hx)mx

[0119] (5) Calculate the inclination my of the head 9 in the y-axis direction relative to the processed surface 8A.

[0120] my=(hA-hC) / 2r

[0121] (6) The heights of the pair of displacement drive units 6A arranged along the Y direction are displaced by the following values.

[0122] ΔhA=(L-hy)my

[0123] ΔhC=-(L+hy)my

[0124] (7) The gaps between the laser displacement meters 5A, 5B, 5C, and 5D and the processed surface 8A are measured again. The measured values ​​of the gaps are denoted as hA, hB, hC, and hD.

[0125] (8) The average value hav of the gaps at the four locations where the four laser displacement meters 5A, 5B, 5C, and 5D are located is calculated, and the differences between hav and hA, hB, hC, and hD are calculated respectively.

[0126] When the difference at any one of the above differences (measurement position) is large, that is, when there is only one portion that deviates greatly from the average value hav, the process returns to the above step (3).

[0127] (9) In the above (8), when the deviation from the average value hav at any part is small, each displacement drive unit 6A is displaced according to h-hav, and the control is terminated.

[0128] The other structures and effects of the focused ion beam apparatus 1A of this modification 1 are the same as those of the focused ion beam apparatus 1 of the first embodiment described above.

[0129] It should be noted that, in this modification example 1, the displacement drive unit 6A is provided directly above each of the four laser displacement meters 5A, 5B, 5C, and 5D. However, the displacement drive unit 6A may be provided directly above each of the three laser displacement meters.

[0130] Thus, in the case of three laser displacement meters, it is better to perform the following control. First, set the target value h of the gap. Next, use the three laser displacement meters 5A, 5B, and 5C to measure the gap with the processed surface 8A. Set the measured values ​​of each displacement to hA, hB, and hC. Make each displacement drive unit displace according to h-hA, h-hB, and h-hC, respectively. Finally, use the laser displacement meters 5A, 5B, and 5C to measure the gap with the processed surface 8A for confirmation.

[0131] (Variation 2 of the first embodiment)

[0132] Figure 6 1 is a bottom view of a differential exhaust device 2A according to a second modification of the first embodiment of the present invention. The differential exhaust device 2A includes three light-transmitting openings 14E, 14F, and 14G at equal intervals along the outer circumference of the head 9, and includes laser displacement meters 5E, 5F, and 5G corresponding to the light-transmitting openings 14E, 14F, and 14G.

[0133] In the differential exhaust device 2A of the second modification, the management gap Gm at three points of the laser displacement meters 5E, 5F, and 5G can be measured to achieve parallel displacement drive control of the facing surface 9A and the processed surface 8A. In the differential exhaust device and the focused ion beam device of the present invention, the head 9 only needs to have a structure with laser displacement meters as gap measuring units at three or more locations.

[0134] (Variation 3 of the first embodiment)

[0135] Figure 7 and Figure 8A focused ion beam device 1B according to Modification 3 of the first embodiment is shown. Figure 7 yes Figure 8 VII-VII section view. Figure 8 1 is a bottom view of a differential exhaust device 2B of Modification 3. In Modification 3, unlike the focused ion beam device 1 of the first embodiment, the laser displacement meter is not arranged to be offset to the rear, but the laser displacement meter is provided at the outer periphery of the head 9 and the position of the front end of the laser displacement meter is set to the same height as the facing surface 9A of the head 9. In Modification 3, laser displacement meters 5H, 5I, 5J, and 5K are used, but of course, other gap sensors may be used as the gap measuring unit.

[0136] In addition, in this modification example 3, nitrogen (N2) as an inert gas is sprayed from the outermost annular groove 10D in the head 9 to the processed surface 8A to generate a gas curtain. In this way, by using an inert gas, the inside of the lens barrel 16 can be purged using the inert gas, thereby improving the environment. In addition, under the spraying of the inert gas, there is an effect of applying force to the head 9 in the direction away from the processed surface 8A to make the head 9 float. Therefore, in this modification example 3, there is an effect of offsetting the vacuum pressure generated by differential exhaust.

[0137] (Variation 4 of the first embodiment)

[0138] Fig. 9 A focused ion beam device 1C according to a fourth modification of the first embodiment is shown.

[0139] In this embodiment, dry nitrogen (N2) is set to be ejected obliquely outward from the outermost annular groove 10D of the head 9. The annular groove 10D is formed in an outwardly inclined manner. In addition, the delivery pressure is set so that the nitrogen (N2) is ejected from the annular groove 10D at a high speed.

[0140] Therefore, by discharging the nitrogen (N2) injected from the annular groove 10D into the atmosphere at high speed, the gas on the processing space Sp side can be discharged together with the high-speed flow of nitrogen. Under this effect, it is possible to prevent the air from the atmosphere side from flowing into the processing space Sp, and the processing space Sp can be further made into a high vacuum by discharging the gas molecules in the processing space Sp.

[0141] Furthermore, in this modification 4, by spraying dry nitrogen, it is possible to reduce the situation where moisture is mixed into the processing space Sp. In addition, since a gas curtain is generated by spraying nitrogen (N2) as an inert gas to the processed surface 8A, the inert gas can be used to purify the inside of the lens barrel 16, thereby improving the environment. In addition, under the spraying of the inert gas, there is an effect of applying force to the head 9 in the direction away from the processed surface 8A to make the head 9 float. Therefore, in this modification 4, there is also an effect of offsetting the vacuum pressure generated by differential exhaust.

[0142] (Variation 5 of the First Embodiment)

[0143] Fig.10 A differential exhaust device 2C of a focused ion beam device according to a fifth modification of the first embodiment is shown. Fig.10 The portion indicated by the dashed line is the substrate to be processed 8. In this modification 5, the planar shape of the head 9 is a square, and the laser displacement meters 5L, 5M, 5N, and 5O are provided laterally at the center of each of the four sides thereof.

[0144] In this modification 5, when the substrate 8 to be processed moves in the X-Y direction, even if the head 9 is located at the edge of the substrate 8 to be processed and one of the four laser displacement meters is separated from the edge, as long as the remaining three laser displacement meters are opposite to the substrate 8 to be processed, the displacement drive control can be performed based on the detection amounts of the three laser displacement meters. Therefore, the area close to the edge of the substrate 8 to be processed can also be processed.

[0145] [Second embodiment]

[0146] Fig.11 FIG. 1 is an explanatory diagram schematically showing a focused ion beam apparatus 1E according to a second embodiment of the present invention. Fig.11 Although a laser displacement meter and the like are not shown in the figure, the laser displacement meter and the like are provided as the gap measuring unit in the same manner as the focused ion beam device 1 of the first embodiment. Fig.11 In the embodiment, the annular grooves are simplified into two types of annular grooves 10A and 10D, one for the exhaust system and the other for the intake system.

[0147] In particular, in the present embodiment, the object electrostatic lens 17A and the microchannel plate 21 of the focused ion beam optical system 17 are provided in the front end of the lens barrel 16. The microchannel plate 21 is arranged at a position closer to the downstream side of the ion beam (closer to the front end of the lens barrel 16) than the object electrostatic lens 17A. Fig.11 As shown, the microchannel plate 21 has an ion beam passage opening 21A opened in the center, and its peripheral portion is provided as a detection portion 21B capable of capturing secondary charged particles P generated from the substrate 8 to be processed.

[0148] It should be noted that, when the focused ion beam device 1E is used to observe the processed surface 8A of the processed substrate 8, the ion beam Ib is irradiated in a state where the supply of the deposition gas is stopped. In addition, electrons are generated in the detection unit 21B due to the incidence of secondary charged particles P generated from the processed surface 8A into which the ion beam Ib is incident. In this way, the generated electrons are amplified by the avalanche current to obtain information on the surface of the processed surface 8A. Therefore, according to the focused energy beam device 1E of this embodiment, the state of the processed surface 8A can be detected with high sensitivity.

[0149] According to the focused ion beam device 1E of the present embodiment, the working distance (WD) of the object electrostatic lens 17A can be made close, and compared with the existing method of configuring a scintillator at a position away from the focused ion beam optical system in the vacuum chamber for detection, the capture efficiency of the secondary charged particles P can be improved. If the working distance of the object electrostatic lens 17A is shortened in this way, it is difficult to separately configure a structure such as a nozzle for deposition gas near the front end of the lens barrel 16. However, in the present embodiment, the annular groove 10A for supplying deposition gas is also provided at the front end of the lens barrel 16. Therefore, the ion beam Ib can be irradiated while filling the processing space Sp with deposition gas. Therefore, the problem of difficulty in supplying deposition gas due to shortened working distance does not occur.

[0150] According to the present embodiment, as a result, the working distance of the object electrostatic lens 17A can be shortened, so the focusing efficiency of the focused ion beam optical system 17 is also improved, and a fine ion beam Ib can be irradiated. In addition, in the present embodiment, the position of the substrate 8 to be processed where the state of the processed surface 8A is observed by the ion beam Ib is the same as the position of the substrate 8 to be processed when the CVD film is formed, so there is no need to move the substrate 8 to be processed. Therefore, the problem of deviation of the processing position due to the movement of the substrate 8 to be processed can be avoided.

[0151] (Variation 1 of the Second Embodiment)

[0152] like Fig.12As shown, in the focused ion beam device 1F of the variant 1 of the second embodiment, the microchannel plate 21 is not used, but a detector 22 is arranged at a position on the downstream side of the ion beam of the object electrostatic lens 17A and on the side of the ion beam Ib. In addition, a deflector 23 is arranged at a position on the upstream side of the ion beam of the object electrostatic lens 17A. In this focused ion beam device 1F, when observing the processed surface 8A of the processed substrate 8, the deflector 23 is used to deflect the ion beam Ib in a direction close to the detector 22 and obliquely incident on the processed substrate 8. In addition, the detector 22 is used to capture the secondary charged particles P generated by the incidence of the ion beam Ib on the processed substrate 8, thereby enabling the surface state of the processed substrate 8 to be observed. A scintillator can also be used as the detector 22. The other structures of the focused ion beam device 1F are substantially the same as those of the first and second embodiments described above.

[0153] (Third Embodiment)

[0154] Fig.13 A focused ion beam device 1G according to a third embodiment of the present invention is shown.

[0155] like Fig.13 As shown, the focused ion beam device 1G is provided with a floating pad 24 in a circumferential manner along the outer peripheral edge of the opposing surface 9A of the head 9 of the differential exhaust device 2D. The floating pad 24 is connected to a spray pump that supplies nitrogen (N2) as an inert gas via a connecting pipe 40. The floating pad 24 is formed in a flat annular tube shape, and a plurality of slit-shaped or circular openings are formed on the lower surface, and the inert gas can be sprayed from the openings. In addition, laser displacement meters 5A, 5B, 5C, and 5D are arranged at four locations on the outer periphery of the floating pad 24. The other structures of the focused ion beam device 1G of this embodiment are substantially the same as those of the focused ion beam device 1 of the first embodiment described above.

[0156] The floating pad 24 sprays the inert gas toward the processed surface 8A to form an air curtain. Therefore, the floating pad 24 applies force to the head 9 in the direction away from the processed surface 8A. In this way, by using the inert gas, the inside of the lens barrel 16 can be purified by the inert gas, thereby improving the environment. In addition, under the spraying of the inert gas, there is an effect of applying force to the head 9 in the direction away from the processed surface 8A to float the head 9. Therefore, in this embodiment, there is an effect of offsetting the vacuum pressure generated by the differential exhaust.

[0157] (Fourth Embodiment)

[0158] Fig.14A focused ion beam device 1H according to a fourth embodiment of the present invention is shown. The focused ion beam device 1H includes an X-Y precision stage 25. The X-Y precision stage 25 is provided with tilt adjustment support legs 26 as displacement drive units that extend upward and downward at the bottom of each of the four corners. These tilt adjustment support legs 26 are connected to a gap control unit (not shown).

[0159] A substrate support table 4 that moves in the XY direction is provided on the XY precision stage 25 . A substrate 8 to be processed, such as a photomask, is placed on the substrate support table 4 .

[0160] like Fig.14 As shown, a support frame 20 is mounted on the X-Y precision workbench 25. A FIB column 3 is suspended in the center of the support frame 20. A differential exhaust device 2 is integrally provided at the lower end of the FIB column 3. It should be noted that the structure of the FIB column 3 and the differential exhaust device 2 is substantially the same as the structure of the focused ion beam device 1 of the first embodiment described above.

[0161] A vacuum pump 27 is connected to the FIB column 3 , and a vacuum pump control power supply 28 is connected to the vacuum pump 27 . In addition, a stage control power supply 29 is connected to the XY precision stage 25 .

[0162] In particular, in the present embodiment, optical alignment microscopes 30 are provided above positions corresponding to alignment marks 8B formed on four corners of the substrate to be processed 8 disposed at predetermined positions on the XY precision stage 25 .

[0163] The existing focused ion beam device houses the processed substrate and the focused ion beam optical system in a large vacuum chamber. In addition, a charged particle detector arranged on the outside of the FIB column is used to detect the secondary electrons and secondary ions emitted from the processed substrate irradiated with the ion beam, and the changes in their intensity are observed to observe the surface shape of the processed substrate. Similarly, in a vacuum, secondary charged particles emitted from the calibration mark due to the irradiation of the ion beam are obtained for calibration. Therefore, it is necessary to move the calibration marks at the four corners of the processed substrate placed in the vacuum chamber to the irradiation position of the FIB column. Such a movement requires an X-Y precision worktable to cover an area approximately four times that of the processed substrate, resulting in a further increase in the vacuum chamber.

[0164] Compared with the above-mentioned conventional focused ion beam apparatus, in this embodiment, a local vacuum space is realized by using the differential exhaust device 2, whereby the area other than the area to be processed is at atmospheric pressure, so that an optical calibration microscope can be easily installed. Fig.14As shown, in this embodiment, calibration is performed using calibration marks 8B at the four corners of the substrate 8 to be processed, and coordinates can be determined according to the relative relationship between the position of the optical calibration microscope 30 and the processing position where the FIB column 3 is processed. Therefore, according to the focused ion beam device 1H of this embodiment, the travel of the X-Y precision stage 25 for calibration is not required. In addition, according to the focused ion beam device 1H, the movement time for calibration can be shortened.

[0165] (Fifth Embodiment)

[0166] Fig.15 A focused ion beam device 1I according to a fifth embodiment of the present invention is shown.

[0167] The focused ion beam device 1I of this embodiment has a substantially similar structure to the focused ion beam device 1H of the fourth embodiment described above. The structure different from the fourth embodiment described above is that the optical microscope 31 is provided in a manner of setting an offset distance relative to the FIB column 3. It should be noted that in this embodiment, the optical calibration microscope 30 is not provided, but of course, the optical calibration microscope 30 may be added.

[0168] In an existing focused ion beam device, the processed substrate and the focused ion beam optical system are contained in a large vacuum chamber. In addition, a charged particle detector disposed on the outside of the FIB column is used in a vacuum to detect secondary electrons and secondary ions emitted from the processed substrate irradiated with the ion beam, and the change in their intensity is observed, thereby observing the surface shape of the processed substrate as an ion image. Usually, the ion image is used to confirm the irradiation position, but since the secondary charged particles depend on the surface shape (tilt angle) of the processed substrate, only the surface shape is detected as an ion image. Therefore, in the case of less fluctuations in the surface shape, it will become an ion image with low contrast, making it difficult to confirm the irradiation position, resulting in reduced position accuracy.

[0169] like Fig.15 As shown, in the focused ion beam device 1I of the present embodiment, the differential exhaust device 2 can be used to locally set the vacuum degree to high, so it is not necessary to place the entire substrate 8 to be processed in a vacuum. Therefore, an optical microscope 31 can be set near the FIB column 3. Therefore, it is possible to directly obtain not only surface undulation information but also color information for the surface portion of the substrate 8 to be processed by the ion beam through a high-resolution optical microscope 31 or a laser microscope not shown. Therefore, in the present embodiment, it is possible to easily confirm the position to be processed by the ion beam.

[0170] As long as the positional deviation of the ion beam irradiation position relative to the position confirmed by the optical microscope 31 is confirmed in advance, the substrate to be processed 8 can be immediately placed at the ion beam irradiation position by performing the deviation in a state where the position is confirmed based on the optical image of the position to be processed. In this way, in this embodiment, the irradiation position can be specified even for the surface of the substrate to be processed 8 with little undulation, and ion beam irradiation can be performed with high precision.

[0171] (Sixth Embodiment)

[0172] Fig.16 The sixth embodiment of the present invention is shown in the figure. The focused ion beam device 1J includes an X-Y precision worktable 25, support legs 26 for tilt adjustment that are respectively provided at the bottom of the four corners of the X-Y precision worktable 25 and extend upward and downward, a substrate support table 4, a support frame 20, four FIB columns 3 suspended from the support frame 20, and a differential exhaust device 2 provided at the lower end of the FIB column 3.

[0173] A vacuum pump 27 is connected to each FIB column 3 , and a vacuum pump control power supply 28 is connected to the vacuum pump 27 . In addition, a stage control power supply 29 is connected to the XY precision stage 25 .

[0174] In particular, in the present embodiment, the four FIB columns 3 are arranged in a manner corresponding to the regions into which the processed substrate 8 is divided into four. In the case where one FIB column 3 is used for one processed substrate 8 as in the prior art, a stroke four times the area of ​​the substrate is required for the substrate support table 4. In contrast, in the present embodiment, by providing four FIB columns 3, the movable stroke of the substrate support table 4 can be reduced by operating the X-Y precision worktable 25, and the footprint of the device can be suppressed to a small size. In addition, in the present embodiment, multiple locations can be irradiated with ion beams at the same time, so that the substrate can be processed at a high speed.

[0175] (Seventh Embodiment)

[0176] Fig.17 A focused ion beam device 1K according to a seventh embodiment of the present invention is shown.

[0177] The focused ion beam device 1K includes a substrate stage 32. The substrate stage 32 is provided with tilt adjustment support legs 26 that extend and retract upward and downward at the bottom of four corners. These tilt adjustment support legs 26 are connected to a gap control unit (not shown).

[0178] A substrate support table 4 is provided on the substrate stage 32. On the substrate support table 4, a substrate 8 to be processed such as a photomask is placed.

[0179] like Fig.17 As shown, an X-Y gantry table 33 is mounted on the substrate table 32. A movable block 34 that can move in the X-Y direction is provided on the X-Y gantry table 33. The FIB column 3 and the optical calibration microscope 30 are fixed to the movable block 34. A differential exhaust device 2 is integrally provided at the lower end of the FIB column 3. It should be noted that the structure of the FIB column 3 and the differential exhaust device 2 is substantially the same as the structure of the focused ion beam device 1 of the first embodiment described above.

[0180] A vacuum pump 27 is connected to the FIB column 3 . In addition, a stage control power supply 35 is connected to the movable block 34 .

[0181] In particular, in this embodiment, by setting the movable block 34 on the XY gantry table 33 so as to be movable in the XY direction, the FIB column 3 and the optical calibration microscope 30 set on the movable block 34 can be moved while the position of the processed substrate 8 is fixed.

[0182] In this way, since the position of the substrate 8 to be processed can be fixed, the occupied area of ​​the device can be reduced.

[0183] As described above, in the focused ion beam apparatus of each embodiment of the present invention, a differential exhaust apparatus that can reliably maintain the differential exhaust function even for a large substrate to be processed with warping and undulations and a focused ion beam apparatus that can perform good processing can be realized.

[0184] Furthermore, according to the present invention, since the high vacuum of the processing space Sp of the head 9 can be reliably maintained, the quality of the processing work in the processing space can be improved.

[0185] Furthermore, according to the present invention, the device can be made compact, so that the equipment cost and the management cost can be reduced.

[0186] In addition, according to the present invention, the gap between the outer periphery of the head 9 and the processed surface 8A can be made uniform, and the opposing surface 9A of the head 9 and the processed surface 8A of the processed substrate 8 can be kept parallel, which can prevent the high vacuum from being destroyed in the outer periphery. Therefore, good processing (observation, film formation, etc.) can be performed in the processing space Sp.

[0187] [Other embodiments]

[0188] Although the embodiments of the present invention have been described above, it should not be understood that the discussion and drawings constituting part of the disclosure of these embodiments will limit the present invention. Various alternative embodiments, examples, and application technologies can be known to those skilled in the art based on this disclosure.

[0189] For example, the focused energy beam device of the above-mentioned embodiment is described as being applicable to a focused ion beam device as a repair device, but it can also be applied to an electron beam exposure device having the function of directly exposing a processed substrate, a scanning electron microscope capable of observing the surface state of the processed substrate, etc.

[0190] In the above-mentioned embodiment, the number of annular grooves formed in the differential exhaust device is not limited to four, and it is sufficient as long as at least two annular grooves for performing exhaust and blowing are provided.

[0191] In the above-mentioned embodiment, the displacement drive unit 6, 6A and the tilt adjustment support leg 26 are used as the displacement drive unit, but the present invention is not limited thereto, and other mechanisms capable of adjusting the tilt and the gap may be applied.

[0192] In the above-mentioned embodiment, laser displacement meters 5A, 5B, 5C, and 5D are used as the gap measuring unit, but a pressure meter may be used instead of them. In this case, the inclination and distance between the processed surface 8A and the opposing surface 9A of the head 9 can be estimated based on the pressure measurement value of the pressure meter, thereby controlling the displacement driving unit.

[0193] In the above-mentioned embodiment, laser displacement meters 5A, 5B, 5C, and 5D are used as gap measuring parts, but contact sensors, ultrasonic sensors, electrostatic capacitive sensors, etc. can also be used. It should be noted that if the measurement accuracy of μm level required for differential exhaust as in the above-mentioned embodiment is considered, the above-mentioned laser displacement meters 5A, 5B, 5C, and 5D are preferred. In addition, in the above-mentioned embodiment, it is set as a structure with four laser displacement meters 5A, 5B, 5C, and 5D, but the present invention only needs to have a structure with at least three gap measuring parts along the periphery of the head 9.

[0194] In the above-mentioned embodiment, the FIB column 3 emitting the ion beam Ib is used as the energy beam, but the differential exhaust device of the present invention may also be applied to a repair device having a local vacuum space and irradiating a laser beam to remove or form wiring.

[0195] Explanation of symbols

[0196] Gg Parenchymal gap

[0197] Gm Management Gap

[0198] Gos offset gap

[0199] Ib Ion beam

[0200] P Secondary charged particles

[0201] Sp Processing Space

[0202] 1A, 1E, 1F, 1G, 1H, 1I, 1J, 1K Focused ion beam device (focused energy beam device)

[0203] 2, 2A, 2B, 2C, 2D Differential exhaust

[0204] 3 Focused ion beam column (FIB column, focused energy beam column)

[0205] 4 Substrate support

[0206] 5A, 5B, 5C, 5D Laser displacement meter (gap measurement unit)

[0207] 6. 6A displacement drive unit

[0208] 7. Gap Control Unit

[0209] 8. Processed substrate

[0210] 8A Treated surface

[0211] 8B Calibration mark

[0212] 9 Head

[0213] 9A Opposite side

[0214] 10A annular groove (innermost annular groove)

[0215] 10B, 10C Annular groove

[0216] 10D annular groove (outermost annular groove)

[0217] 11 Opening

[0218] 12, 13 connecting pipe

[0219] 14A, 14B, 14C, 14D Light-transmitting openings

[0220] 15A, 15B, 15C, 15D Light transmission plate

[0221] 16 Lens tube

[0222] 17 Focused Ion Beam Optics

[0223] 17A Electrostatic lens

[0224] 18 Lifting mechanism

[0225] 19 Support

[0226] 20 Support frame

[0227] 21 Microchannel Plate

[0228] 21A Ion beam port

[0229] 21B Testing Department

[0230] 22 Detector

[0231] 23 Deflector

[0232] 24 Floating pad

[0233] 25 X-Y precision worktable

[0234] 26 Tilt adjustment support leg (displacement drive unit)

[0235] 27 Vacuum Pump

[0236] 28 Vacuum pump control power supply

[0237] 29 Workbench control power supply

[0238] 30 Optical Calibration Microscope

[0239] 31. Optical microscope

[0240] 32 substrate workbench

[0241] 33 X-Y gantry table

[0242] 34 Movable Block

[0243] 35 Workbench control power supply

[0244] 40 Connecting pipe

Claims

1. A focused energy beam device, wherein: The focused energy beam device comprises: A differential exhaust device, comprising a head, the head being able to move relative to a processed surface of a processed substrate in a manner of being opposed to any region of the processed surface, a plurality of annular grooves being formed on an opposing surface of the head opposing the processed surface, the plurality of annular grooves surrounding the center of the head, an opening being provided in an inner region of the innermost annular groove of the plurality of annular grooves of the head, the opening forming a processing space capable of processing the processed surface, at least one of the plurality of annular grooves being connected to a vacuum pump, the processing space being set to a high vacuum degree by a suction action from the annular groove in a state where the opposing surface is opposed to the processed surface; A focused energy beam columnar body, which is arranged on the side of the head opposite to the facing surface, and has a lens barrel connected to the opening and capable of communicating with the processing space, and a focused energy beam system is built in the lens barrel to emit the focused energy beam through the opening; A displacement driving unit capable of displacing the head or the processed substrate to adjust the parallelism and distance between the processed surface and the opposing surface; a gap measuring unit, which is disposed at at least three locations along the periphery of the facing surface of the head and is capable of detecting the distance between the facing surface and the processed surface; as well as a gap control unit that controls the displacement drive unit based on the distance information between the opposing surface and the processed surface detected by the gap measurement unit so that the opposing surface and the processed surface become parallel with each other at a predetermined distance. The focused energy beam device is provided with an observation microscope at an offset distance near the side of the head, and the observation microscope observes the area processed by the focused energy beam in a state capable of acquiring high-resolution information on the processed area of ​​the processed substrate. The focused energy beam device is set so that the head moves the offset distance so that the irradiation position of the focused energy beam of the focused energy beam column overlaps with the processed area whose information is acquired through the observation microscope.

2. The focused energy beam device according to claim 1, wherein: The gap measuring unit detects the pressure of the space between the gap measuring unit and the processed surface. The gap control unit controls the displacement drive unit based on information on the pressure.

3. The focused energy beam device according to claim 1, wherein: The substrate to be processed is formed into a rectangular shape having vertical and horizontal sides in the X-Y direction. The head can move along the X-Y direction of the substrate to be processed. The gap measuring parts are provided at four locations outside the outermost annular groove formed in the head. The four-position gap measuring unit group is composed of two pairs: a pair arranged on both sides of the X direction with the center of the opening on the facing surface as the center, and a pair arranged on both sides of the Y direction with the center of the opening as the center.

4. The focused energy beam device according to claim 1, wherein: The gap measuring unit is composed of a laser displacement meter. The laser displacement meter is set to be offset in a direction farther from the processing surface than the opposing surface, so that the distance between the laser displacement meter and the processing surface becomes a high-precision measurement area of ​​the laser displacement meter.

5. The focused energy beam device according to claim 1, wherein: The focused energy beam device includes an optical microscope that detects the alignment mark formed on the substrate to be processed.

6. The focused energy beam device according to claim 1, wherein: The outermost annular groove among the plurality of annular grooves is connected to a discharge pump for supplying an inert gas, and the inert gas is blown from the annular groove toward the substrate to be processed to form a gas curtain.

7. The focused energy beam device according to claim 1, wherein: A floating pad is arranged on the outer side of the facing surface along the outer peripheral edge of the facing surface of the head and is provided integrally with the head. The floating pad is connected to a discharge pump for supplying an inert gas, and the floating pad sprays the inert gas toward the surface to be processed to form a gas curtain to bias the head in a direction away from the surface to be processed.

8. The focused energy beam device according to claim 1, wherein: A microchannel plate is arranged in the front end of the lens barrel, and an energy beam passage port for the focused energy beam to pass through is formed in the microchannel plate. The periphery of the energy beam passage port of the microchannel plate is used as a detection part capable of capturing secondary charged particles generated from the processed substrate.

9. The focused energy beam device according to claim 1, wherein: The focused energy beam device includes a plurality of focused energy beam columns having the differential exhaust device provided at the front end thereof, and each of the focused energy beam columns is arranged to face a region that divides the processing surface of the processing substrate into a plurality of regions.

10. The focused energy beam device according to claim 1, wherein: The position of the substrate to be processed is fixed so that the focused energy beam columnar body having the differential exhaust device provided at the front end thereof can move relative to the substrate to be processed in the XY direction.

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