Display device and electronic equipment

Abstract

The display device comprises a screen body, a proximity sensor and a wavelength conversion piece, the wavelength conversion piece is located between the screen body and the proximity sensor, the proximity sensor comprises a transmitting end and a receiving end; the wavelength conversion piece is used for converting the wavelength of a first infrared signal emitted by the transmitting end to above 1100nm, the first infrared signal passes through the screen body through the wavelength conversion piece; and / or the wavelength conversion piece is used for converting the wavelength of a second infrared signal to below 1000nm, the receiving end receives the second infrared signal passing through the wavelength conversion piece.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of electronic products, in particular to a display device and an electronic device. BACKGROUND

[0002] The existing electronic device is usually provided with a proximity sensor, wherein the proximity sensor emits infrared light to perceive the distance of external objects. Specifically, the proximity sensor includes a transmitting end and a receiving end. The transmitting end emits infrared light to the outside through the display screen. The infrared light is reflected by the external reflecting object and then sensed by the receiving end. Then, the distance of the reflecting object can be determined based on the signal amount of the infrared light sensed by the receiving end.

[0003] However, since the proximity sensor is arranged under the screen, the emitted and received infrared light needs to pass through the display screen. The integrated circuit of the display screen includes silicon material. The light emitting material of the existing proximity sensor also usually adopts silicon material. Due to the semiconductor characteristics of silicon material, the emitted and received infrared light of the proximity sensor during operation can cause photoelectric effect of the silicon material in the integrated circuit of the display screen, thereby easily accelerating the aging of the display screen and reducing the service life of the display screen. SUMMARY

[0004] The present disclosure provides a display device and an electronic device, which can avoid the problem of photoelectric effect of silicon material in the integrated circuit of the screen body during operation of the proximity sensor, thereby delaying the aging of the screen body and prolonging the service life of the screen body.

[0005] In a first aspect, an embodiment of the present disclosure provides a display device, comprising: a screen body, a proximity sensor, and a wavelength conversion member, wherein the wavelength conversion member is located between the screen body and the proximity sensor, and the proximity sensor includes a transmitting end and a receiving end.

[0006] The wavelength conversion member is configured to convert the wavelength of a first infrared signal emitted by the transmitting end to above 1100 nm, and the first infrared signal passes through the screen body through the wavelength conversion member; and / or

[0007] The wavelength conversion member is configured to convert the wavelength of a second infrared signal to below 1000 nm, and the receiving end receives the second infrared signal passing through the wavelength conversion member.

[0008] In a second aspect, an embodiment of the present disclosure provides an electronic device comprising the display device of the first aspect.

[0009] In the embodiments of the present disclosure, since the wavelength conversion member is arranged between the screen body and the proximity sensor, and the wavelength conversion member can convert the wavelength of the first infrared signal emitted by the emitting end to above 1100nm, thus, the photoelectric effect of the silicon material in the integrated circuit of the screen body when the first infrared signal enters the screen body can be avoided, and the aging of the screen body is delayed, and the service life of the screen body is prolonged. In addition, the wavelength conversion member can also convert the wavelength of the second infrared signal to below 1000nm, so that the receiving end can normally receive the second infrared signal. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 is a structural schematic diagram of a display device provided by the embodiments of the present disclosure;

[0011] Figure 2 is a structural schematic diagram of a display device provided by the embodiments of the present disclosure;

[0012] Figure 3 is a structural schematic diagram of a display device provided by the embodiments of the present disclosure;

[0013] Figure 4 is a structural schematic diagram of a display device provided by the embodiments of the present disclosure. DETAILED DESCRIPTION

[0014] The technical solutions in the embodiments of the present disclosure will be described in detail below with reference to the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present disclosure.

[0015] The terms "first", "second", and the like in the specification and claims of the present disclosure are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present disclosure can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are usually a class, not limited to the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims means at least one of the connected objects, and the character " / ", generally indicates that the front and rear associated objects are in an "or" relationship.

[0016] The display device and electronic equipment provided by the embodiments of the present disclosure will be described in detail below with reference to the drawings and specific embodiments and their application scenarios.

[0017] Please refer to Figures 1 to 4A structural schematic diagram of a display device is provided for embodiments of the present disclosure. The display device includes a screen body 100, a proximity sensor 200, and a wavelength conversion member 300 located between the screen body 100 and the proximity sensor 200. The proximity sensor 200 includes a transmitting end 210 and a receiving end 220.

[0018] The wavelength conversion member 300 is configured to convert the wavelength of a first infrared signal emitted by the transmitting end 210 to a wavelength of 1100 nm or above. The first infrared signal passes through the screen body 100 via the wavelength conversion member 300.

[0019] The wavelength conversion member 300 is configured to convert the wavelength of a second infrared signal to a wavelength of 1000 nm or below. The receiving end 220 receives the second infrared signal that passes through the wavelength conversion member 300.

[0020] Specifically, the screen body 100 can be various types of screens, such as an organic light-emitting diode (OLED) screen. The proximity sensor 200 can also be referred to as an infrared proximity sensor 200 or an infrared sensor. By detecting the distance between an external entity object and the display device based on the proximity sensor 200, the display device can be prevented from being misoperated. For example, during a call based on an electronic device including the display device, when the electronic device is close to the user's face, the distance between the electronic device and the user's face is detected, and when the distance value is less than a preset value, the screen of the electronic device can be controlled to be turned off to prevent misoperation during the call. In addition, when the electronic device is not turned off, the user can put the electronic device in a pocket, which can easily cause misoperation. Therefore, whether the user puts the electronic device in a pocket can be determined based on the proximity sensor 200, and in a case where it is determined that the user puts the electronic device in a pocket, the electronic device can be controlled to be turned off to prevent misoperation during the process.

[0021] The wavelength conversion member 300 can be configured to change the wavelength of the infrared signal emitted and received by the proximity sensor 200. Specifically, the wavelength of the infrared signal changes after passing through the wavelength conversion member 300.

[0022] The reason that the photoelectric effect of the silicon material in the integrated circuit of the display screen occurs in the working process of the proximity sensor 200 is that the light-emitting material in the proximity sensor 200 and the silicon material in the integrated circuit belong to the same material, and the excitation photon frequency of the same material is necessarily greater than the cut-off frequency of the photoelectric effect of the material. Therefore, using the silicon material as the light-emitting material will inevitably excite the photoelectric effect of the silicon material in the integrated circuit, that is, the light-emitting wavelength of the silicon will inevitably excite the photoelectric effect of the silicon. When the photoelectric effect of the silicon material in the integrated circuit occurs, the following abnormalities will occur in the screen body 100: appearing or high-speed flickering in the corresponding area of the proximity sensor 200, or a persistent white bright spot, at the same time, it will also cause the accelerated aging of the screen in this area, which greatly reduces the service life of the screen. Among them, the wavelength of the infrared light emitted by the proximity sensor 200 is usually about 940nm, that is, when the infrared light with a wavelength of about 940nm passes through the screen body 100, it is easy to excite the photoelectric effect of the silicon material in the integrated circuit of the screen body 100.

[0023] Although replacing the light-emitting material of the proximity sensor 200 can overcome the above problems, for example, using indium gallium arsenide (or other ternary compound) to replace silicon. However, this scheme redesigns the entire material system of the emission and reception of the proximity sensor 200, and the entire production process of the proximity sensor 200 will be changed from the mature and already large-scale silicon process to the ternary semiconductor process with indium gallium arsenide (or other ternary compound) as the emission and reception semiconductor material, which is far less mature than silicon. Moreover, the ternary compound semiconductor material itself is more expensive than silicon. The great difference in maturity and cost of semiconductor and packaging processes, as well as the cost difference of the material itself, may cause the design and production cost to increase, the production capacity to be limited, and the application risk to increase.

[0024] Therefore, in the embodiments of the present disclosure, a wavelength conversion member 300 is arranged between the screen body 100 and the proximity sensor 200, so that the wavelength of the first infrared signal emitted by the proximity sensor 200 can be converted by the wavelength conversion member 300, so that the wavelength of the first infrared signal is converted to 1100nm or more. Since 1100nm and 940nm differ greatly, the first infrared signal with a wavelength of 1100nm or more will not excite the photoelectric effect of the silicon material in the integrated circuit of the screen body 100 when passing through the screen body 100.

[0025] Correspondingly, since the second infrared signal is a reflected signal of the first infrared signal entering the screen body 100, the wavelength of the second infrared signal matches the wavelength of the first infrared signal entering the screen body 100, i.e., the wavelength of the second infrared signal is also above 1100 nm, so that the photoelectric effect of the silicon material in the integrated circuit of the screen body 100 is not triggered when the second infrared signal passes through the screen body 100. The wavelength of the second infrared signal can not match the working wavelength of the receiving end 220, so that the wavelength of the second infrared signal can be converted to below 1000 nm by the wavelength conversion member 300, and then transmitted to the receiving end 220, so as to ensure that the receiving end 220 can normally receive the reflected signal, and complete the distance detection process.

[0026] In this embodiment, since the wavelength conversion member 300 is arranged between the screen body 100 and the proximity sensor 200, and the wavelength conversion member 300 can convert the wavelength of the first infrared signal emitted by the emitting end 210 to above 1100 nm, the photoelectric effect of the silicon material in the integrated circuit of the screen body 100 can be avoided when the first infrared signal enters the screen body 100, thereby delaying the aging of the screen body 100 and prolonging the service life of the screen body 100. In addition, the wavelength conversion member 300 can also convert the wavelength of the second infrared signal to below 1000 nm, so as to ensure that the receiving end 220 can normally receive the second infrared signal.

[0027] Optionally, the wavelength conversion member 300 includes at least one of a nonlinear optical crystal, an up-conversion luminescent material, and a down-conversion luminescent material.

[0028] In an embodiment of the present disclosure, the wavelength conversion member 300 described above can adopt a nonlinear optical crystal. The nonlinear optical crystal is a functional material, and the frequency doubling (or frequency conversion) crystal in the nonlinear optical crystal can be used to convert the wavelength of laser.

[0029] The substances commonly used to generate nonlinear effects include lithium niobate, lithium tantalate, potassium titanyl phosphate (KTP), potassium dihydrogen phosphate (KDP), barium borate (BBO), and the like (the above-mentioned crystals have high 2nd-order nonlinear coefficients), and rare gases (mainly used to generate high-order nonlinear effects). The frequency conversion technologies such as frequency doubling, frequency mixing, parametric oscillation, and optical parametric amplification generated by using the 2nd-order nonlinear effect can widen the wavelength range of laser.

[0030] In addition, the wavelength conversion member 300 can also adopt a photoluminescence material, which includes an upconversion luminescence material for reducing wavelength and a downconversion luminescence material for increasing wavelength. Among them, photon upconversion is a process of absorbing two or more photons of longer wavelength to excite light of shorter wavelength. It is a kind of anti-stoke luminescence, and an example of this kind of luminescence is to convert infrared light into visible light. The material with this luminescence property is called upconversion luminescence material, which usually contains elements in d or f region, such as Ln3+, Ti2+, Ni2+, Mo3+, Re4+, Os4+ and the like. Generally, the photon conversion efficiency is low. Downconversion luminescence material refers to a material capable of emitting two or more low-energy photons after absorbing one high-energy photon. Since downconversion luminescence can convert one high-energy photon into two or more low-energy photons that can be utilized, the quantum efficiency can theoretically reach more than 200%.

[0031] In this embodiment, since the nonlinear optical crystal, the upconversion luminescence material and the downconversion luminescence material can all be applied to convert the wavelength of the infrared information, by making the wavelength conversion member 300 include at least one of the nonlinear optical crystal, the upconversion luminescence material and the downconversion luminescence material, the wavelength conversion of the first infrared signal and the second infrared signal based on the wavelength conversion member 300 is realized.

[0032] Optionally, the wavelength conversion member 300 includes a first wavelength conversion member 310, which is arranged between the emitting end 210 and the screen body 100, and the first wavelength conversion member 310 is arranged opposite to the emitting end 210.

[0033] Among them, the first wavelength conversion member 310 can be used to convert the wavelength of the first infrared signal emitted by the emitting end 210 to above 1100 nm.

[0034] Please refer to Figure 3 In an embodiment of the present disclosure, a first wavelength conversion member 310 is arranged between the emitting end 210 and the screen body 100, and the first wavelength conversion member 310 can convert the wavelength of the first infrared signal emitted by the emitting end 210 to above 1100 nm. Since 1100 nm is quite different from 940 nm, the first infrared signal with a wavelength of above 1100 nm will not excite the photoelectric effect of the silicon material in the integrated circuit of the screen body 100 when passing through the screen body 100.

[0035] The first wavelength conversion member 310 can adopt a nonlinear optical crystal or a downconversion luminescence material.

[0036] Specifically, since the second infrared signal is a reflected signal of the first infrared signal entering the screen body 100, the wavelength of the second infrared signal matches the wavelength of the first infrared signal entering the screen body 100, i.e., the wavelength of the second infrared signal is also above 1100 nm, so that the photoelectric effect of the silicon material in the integrated circuit of the screen body 100 is not triggered when the second infrared signal passes through the screen body 100. Since the wavelength of the second infrared signal is also above 1100 nm, in order to ensure that the proximity sensor 200 can normally receive the second infrared signal, the receiving end 220 can be an infrared signal receiving end 220 capable of receiving infrared signals with a wavelength above 1100 nm.

[0037] Among them, the receiving end 220 can be a receiving end 220 made of a new semiconductor process material, for example, the receiving end 220 can be made of indium gallium arsenide (or other three-five compound) to enable the receiving end 220 to receive infrared signals with a wavelength above 1100 nm. It can be understood that the transmitting end of the proximity sensor 200 is a conventional transmitting end 210, i.e., the wavelength of the first infrared signal emitted by the transmitting end is about 940 nm.

[0038] In this embodiment, by arranging a first wavelength conversion member 310 between the transmitting end 210 and the screen body 100, since the first wavelength conversion member 310 can convert the wavelength of the first infrared signal emitted by the transmitting end 210 to above 1100 nm, in this way, the problem of photoelectric effect of the screen body 100 when the infrared signal emitted by the transmitting end 210 passes through the screen body 100 can be avoided.

[0039] Optionally, the wavelength conversion member 300 includes a second wavelength conversion member 320, the second wavelength conversion member 320 is arranged between the receiving end 220 and the screen body 100, and the second wavelength conversion member 320 is arranged opposite to the receiving end 220.

[0040] Among them, the second wavelength conversion member 320 can be used to convert the wavelength of the second infrared signal to below 1000 nm, and the receiving end 220 receives the second infrared signal passing through the wavelength conversion member 300. Specifically, the second wavelength conversion member 320 can use the above-mentioned nonlinear optical crystal or up-conversion luminescent material.

[0041] In the embodiment of the present disclosure, the transmitting end 210 can be an transmitting end 210 made of new semiconductor process materials. For example, the transmitting end 210 can be made of indium gallium arsenide (or other group III-V compounds) so that the transmitting end 210 can emit a first infrared signal above 1100nm. In this way, the problem of the photoelectric effect of the screen body 100 occurring when the first infrared signal emitted by the transmitting end 210 passes through the screen body 100 can be avoided.

[0042] It can be understood that the receiving end 220 is a conventional receiving end 220 , that is, the wavelength of the infrared signal that can be received by the receiving end 220 is about 940 nm.

[0043] See Figure 4 In one embodiment of the present disclosure, a second wavelength conversion component 320 is provided between the receiving end 220 and the screen body 100. Thus, before the second infrared signal enters the receiving end 220, the second wavelength conversion component 320 can be used to convert the wavelength of the second infrared signal to below 1000 nm, thereby ensuring that the receiving end 220 can normally receive the second infrared signal.

[0044] In the disclosed embodiment, the proximity sensor 200 determines the distance of the reflecting object 400 based on the signal intensity sensed by the receiving end 220. However, if the wavelength of the infrared signal emitted by the transmitter 210 of the proximity sensor 200 is the same as the wavelength of the infrared signal received by the receiving end 220, lateral crosstalk between the wavelengths of the infrared signal emitted by the transmitter 210 and the infrared signal received by the receiving end 220 can easily occur within the electronic device, leading to inaccurate signal intensity sensed by the receiving end 220. Lateral crosstalk refers to the situation where the infrared signal emitted by the transmitter 210 propagates laterally within the electronic device to the receiving end 220. Because the wavelengths of the infrared signal emitted by the transmitter 210 and the wavelengths of the infrared signal received by the receiving end 220 are the same, the transmitted signal that reaches the receiving end 220 is superimposed on the received signal, causing the signal intensity sensed by the receiving end 220 to be higher than the actual signal intensity, thereby causing inaccurate signal intensity sensed by the receiving end 220.

[0045] Specifically, see Figure 2In the embodiments of the present disclosure, the receiving end 220 has a gap between the orthographic projection of the target plane and the orthographic projection of the emitting end 210 in the target plane, wherein the target plane is a vertical plane perpendicular to the screen body 100. In this way, when the infrared signal emitted by the emitting end 210 propagates in the lateral direction, the infrared signal will meet the infrared signal received by the receiving end 220, thereby causing the above-mentioned lateral crosstalk problem. Based on this, in one embodiment of the present disclosure, the position of the first wavelength conversion member 310 is further adjusted to avoid the problem of lateral crosstalk in the electronic device.

[0046] Optionally, the wavelength conversion member 300 comprises a first wavelength conversion member 310 arranged opposite to the emitting end 210 and a second wavelength conversion member 320 arranged opposite to the receiving end 220, wherein the first wavelength conversion member 310 is arranged close to the screen body 100, and the second wavelength conversion member 320 is arranged away from the screen body 100.

[0047] In the embodiments of the present disclosure, the emitting end 210 and the receiving end 220 are both conventional receiving ends 220 and emitting ends 210, i.e., the operating wavelength of the emitting end 210 and the receiving end 220 is about 940 nm. The first wavelength conversion member 310 can be used to convert the wavelength of the first infrared signal emitted by the emitting end 210 to above 1100 nm. The second wavelength conversion member 320 can be used to convert the wavelength of the second infrared signal to below 1000 nm.

[0048] Please refer to Figure 2 Since the first wavelength conversion member 310 is arranged to adhere to the non-display end surface of the screen body 100, the wavelength of the first infrared signal emitted by the emitting end 210 is about 940 nm before entering the first wavelength conversion member 310, and immediately after entering the first wavelength conversion member 310, the first infrared signal is emitted from the screen body 100 to the outside world, so the wavelength of the first infrared signal at the gap in the electronic device is always about 940 nm.

[0049] Correspondingly, since the second wavelength conversion member 320 is arranged to adhere to the receiving end 220, the wavelength of the second infrared signal is above 1100 nm before entering the second wavelength conversion member 320, and immediately after entering the second wavelength conversion member 320, the second infrared signal is received by the receiving end 220, so the wavelength of the second infrared signal at the gap in the electronic device is above 1100 nm.

[0050] Since the wavelength of the first infrared signal at the gap inside the electronic device is about 940nm, and the wavelength of the second infrared signal at the gap inside the electronic device is above 1100nm, the wavelength of the infrared signal emitted by the proximity sensor 200 and the received infrared signal at the gap inside the electronic device is different, so the problem of lateral light leakage inside the electronic device can be avoided, and the accuracy of the detection result of the proximity sensor 200 can be improved.

[0051] Optionally, the wavelength conversion piece 300 includes a first wavelength conversion piece 310, a second wavelength conversion piece 320, and a light shielding piece 500, the first wavelength conversion piece 310 is arranged opposite to the emitting end 210, the second wavelength conversion piece 320 is arranged opposite to the receiving end 220, and the light shielding piece 500 is located between the first wavelength conversion piece 310 and the second wavelength conversion piece 320.

[0052] Please refer to Figure 1 In the embodiment of the present disclosure, the light shielding piece 500 can be used to isolate the light channel of the emitting end 210 and the light channel of the receiving end 220, thereby avoiding the problem of lateral light leakage inside the electronic device. The light shielding piece 500 can be made of various materials such as silica gel that can isolate light channels.

[0053] Optionally, the orthographic projection of the light shielding piece 500 on the plane where the proximity sensor 200 is located is located between the emitting end 210 and the receiving end 220.

[0054] In this embodiment, the orthographic projection of the light shielding piece 500 on the plane where the proximity sensor 200 is located is located between the emitting end 210 and the receiving end 220, so as to further improve the isolation effect of the light shielding piece 500 between the light channel of the emitting end 210 and the light channel of the receiving end 220.

[0055] Optionally, the wavelength conversion piece 300 is used to convert the wavelength of the second infrared signal to below 970nm.

[0056] Specifically, for the conventional proximity sensor 200, when the wavelength of the infrared signal entering the receiving end 220 is converted to below 970nm, the receiving end 220 has a better signal receiving effect.

[0057] Based on this, in the embodiment of the present disclosure, by converting the wavelength of the second infrared signal to below 970nm based on the wavelength conversion piece 300, it is beneficial to improve the receiving effect of the receiving end 220 on the second infrared signal, and further improve the accuracy of the detection result of the proximity sensor 200.

[0058] Optionally, the wavelength conversion piece 300 is configured to convert the wavelength of the second infrared signal to a range between 830nm and 970nm.

[0059] Specifically, when the wavelength of the second infrared signal is in the range between 830nm and 970nm, the receiving effect of the second infrared signal received by the receiving end 220 is more ideal compared to the case where the wavelength is in other ranges.

[0060] Based on this, in the embodiments of the present disclosure, by converting the wavelength of the second infrared signal to a range between 830nm and 970nm based on the wavelength conversion piece 300, this is conducive to improving the receiving effect of the second infrared signal by the receiving end 220, and further improving the accuracy of the detection result of the proximity sensor 200.

[0061] Optionally, the wavelength conversion piece 300 includes a plurality of wavelength conversion structures arranged in multiple layers.

[0062] Among them, the wavelength conversion structure can be a sheet-shaped wavelength conversion structure, and in the plurality of wavelength conversion structures arranged in multiple layers, the specific structures of different wavelength conversion structures can be different.

[0063] In this embodiment, by arranging a plurality of wavelength conversion structures in multiple layers, this is conducive to adjusting the wavelength range converted by the wavelength conversion piece 300. That is, by increasing or reducing the number of wavelength conversion structures, the amount of wavelength that can be increased or reduced by the wavelength conversion structure can be adjusted, and then the wavelength size of the infrared signal when it passes through the wavelength conversion structure can be accurately controlled, so as to adjust the first infrared signal and the second infrared signal to an ideal range.

[0064] Another embodiment of the present disclosure also provides an electronic device, which includes the display device described in the above embodiments.

[0065] In this embodiment, since the electronic device includes the display device described in the above embodiments, the electronic device can realize the processes of the display device in the above embodiments, and has the same beneficial effects. To avoid repetition, it will not be described here.

[0066] It should be noted that, in the present document, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such process, method, article, or apparatus. An element proceeded by "comprises... a" does not, without more constraints, exclude the presence of additional identical elements in the process, method, article, or apparatus that comprises the element. Furthermore, it is to be understood that the method and apparatus of the present disclosure are not limited in terms of the order, in which the functions are carried out, and can include a different order, or can comprise functions performed at substantially the same time. For example, the described method can be performed in a different order than described, and / or various steps can be combined, omitted, or added, and / or the described method can be performed by different entities than described. Furthermore, features described with respect to certain examples can be combined in other examples.

[0067] The embodiments of the present disclosure are described above with reference to the accompanying drawings, but the present disclosure is not limited to the specific embodiments described above, and the specific embodiments described above are merely illustrative, rather than limiting, and a person of ordinary skill in the art can make many forms under the inspiration of the present disclosure without departing from the purpose of the present disclosure and the scope protected by the claims.

Claims

1. An electronic device, characterized in that: include: A screen body, a proximity sensor, and a wavelength conversion element, wherein the wavelength conversion element is located between the screen body and the proximity sensor, and the proximity sensor includes a transmitting end and a receiving end; the wavelength conversion element includes a first wavelength conversion element arranged opposite to the transmitting end and a second wavelength conversion element arranged opposite to the receiving end. The first wavelength conversion member is disposed near the screen body and is used to convert the wavelength of the first infrared signal emitted by the transmitting end to a wavelength above 1100 nm. The first infrared signal passes through the screen body via the first wavelength conversion member. The wavelength of the first infrared signal is the wavelength of infrared light. The second wavelength conversion component is arranged away from the screen body, and is used to convert the wavelength of the second infrared signal to below 1000nm. The receiving end receives the second infrared signal passing through the second wavelength conversion component.

2. The electronic device according to claim 1, wherein The wavelength conversion element includes at least one of a nonlinear optical crystal, an up-conversion luminescent material, and a down-conversion luminescent material.

3. The electronic device according to claim 1, wherein The wavelength conversion component includes a first wavelength conversion component, a second wavelength conversion component and a light shielding component. The first wavelength conversion component is arranged opposite to the transmitting end, the second wavelength conversion component is arranged opposite to the receiving end, and the light shielding component is located between the first wavelength conversion component and the second wavelength conversion component.

4. The electronic device according to claim 3, wherein: The orthographic projection of the light shielding member on the plane where the proximity sensor is located is located between the transmitting end and the receiving end.

5. The electronic device according to claim 1, wherein The wavelength conversion component is used to convert the wavelength of the second infrared signal to below 970nm.

6. The electronic device according to claim 1, wherein: The wavelength conversion element is used to convert the wavelength of the second infrared signal to between 830 and 970 nm.

7. The electronic device according to claim 1, wherein: The wavelength conversion element includes a wavelength conversion structure in which multiple layers are stacked.

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