A spaceborne medium- and high-energy proton detector

Abstract

The present invention relates to a spaceborne medium- and high-energy proton detector, which is carried on a satellite platform. The sensor module of the detector includes a cubic scintillator sensor and six silicon sensors; every two silicon sensors are set as a group and respectively arranged on three faces of the scintillator sensor; on one face of the scintillator sensor where no silicon sensor is arranged, multiple silicon photomultiplier tubes (SiPMs) are arranged; in the first silicon sensor and the second silicon sensor of each group of silicon sensors, the incident surface of the first silicon sensor is divided into an inner area and an outer area according to a set area ratio; the inner area of the first silicon sensor and the second silicon sensor are used to detect medium-energy protons and respectively generate electrical signals; the outer area of the first silicon sensor, the second silicon sensor, and the scintillator sensor are used to detect high-energy protons, wherein, the outer area of the first silicon sensor, the second silicon sensor generate electrical signals, and the scintillator sensor generates optical signals; the SiPMs are used to convert the optical signals generated by the scintillator sensor into electrical signals.

Description

Technical Field

[0001] The present invention relates to the field of aerospace, and particularly to a spaceborne medium- and high-energy proton detector. Background Art

[0002] At present, China has respectively carried medium-energy proton detectors and high-energy proton detectors on projects such as Fengyun satellites and space stations, covering the energy ranges of 30 keV to 5 MeV and 4 MeV to 165 MeV respectively in terms of measurement energy bands. In terms of measurement means, traditional semiconductor silicon sensors are used, and the energy of incident protons is inversely deduced according to the charge signals generated by protons in the sensors. The advantage of this detection method is convenient design and relatively high energy resolution. The disadvantage is that when detecting higher energies, multiple sensors need to be stacked for use, which puts higher requirements on the subsequent signal processing circuits, that is, the gains of each circuit must be highly consistent; at the same time, when detecting in multiple directions, the sensors in each direction have a relatively large thickness due to stacking, resulting in an increase in the volume of the probe and thus a relatively large volume of the whole machine.

[0003] The technology of simultaneously detecting medium- and high-energy protons using silicon semiconductors and scintillators has not been used in orbit yet. Summary of the Invention

[0004] The purpose of the present invention is to carry out the structural design of miniaturization and the scheme design of intensification for medium- and high-energy proton detection, break through the comprehensive design and application technology of complex circuits, use a single instrument to simultaneously detect medium-energy protons and high-energy protons, and achieve the miniaturization of the instrument, so as to provide technical support for the development of later miniaturized medium- and high-energy proton detection payloads and lay a foundation for subsequent satellite carrying.

[0005] To achieve the above purpose, the present invention is realized through the following technical solutions.

[0006] The present invention provides a spaceborne medium- and high-energy proton detector, which is carried on a satellite platform. The detector is characterized in that it includes a probe; the probe includes: a sensor module;

[0007] The sensor module includes: a cubic scintillator sensor and six silicon sensors; among them, every two silicon sensors form a group and are respectively arranged on three faces of the scintillator sensor; on one face of the scintillator sensor where no silicon sensor is arranged, multiple silicon photomultiplier tubes SiPM are arranged.

[0008] In the first silicon sensor and the second silicon sensor of each group of silicon sensors, the incident surface of the first silicon sensor is divided into an inner area and an outer area according to a set area ratio, and the centers of the inner area and the outer area are both the center of the incident surface; the inner area and the outer area are isolated by a high-resistance channel; the inner area has a smaller geometric factor and the outer area has a larger geometric factor.

[0009] The first silicon sensor inner region and the second silicon sensor are used to detect medium-energy protons and generate electrical signals respectively;

[0010] The first silicon sensor outer region, the second silicon sensor, and the scintillator sensor are used to detect high-energy protons. Among them, the first silicon sensor outer region and the second silicon sensor generate electrical signals, and the scintillator sensor generates optical signals; The SiPM is used to convert the optical signals generated by the scintillator sensor into electrical signals.

[0011] As one of the improvements to the above technical solution, the detector further includes a circuit module; The circuit module includes: a first preamplifier board, a second preamplifier board, an AD collector, and an FPGA control circuit;

[0012] The first preamplifier board, adjacent to the SiPM, is used to process the electrical signals transmitted by the SiPM;

[0013] The second preamplifier board is used to process the electrical signals output by the first silicon sensor inner region, the first silicon sensor outer region, and the second silicon sensor;

[0014] The AD collector is used to collect and perform AD conversion on the signals transmitted by the first preamplifier board and the second preamplifier board, and transmit them to the FPGA control circuit;

[0015] The FPGA control circuit is used to packet cache the signals transmitted by the AD collector and transmit them to the satellite platform.

[0016] As one of the improvements to the above technical solution, the first preamplifier board includes: a preamplification circuit, a first-stage main amplification circuit, a second-stage main amplification circuit, a first peak hold circuit, a second peak hold circuit, a trigger circuit, and a level conversion circuit;

[0017] The preamplification circuit is used to amplify the electrical signals transmitted by the SiPM and transmit them to the first-stage main amplification circuit and the second-stage main amplification circuit respectively;

[0018] The first-stage main amplification circuit is used to highly amplify the electrical signals transmitted by the preamplification circuit and transmit them to the first peak hold circuit;

[0019] The second-stage main amplification circuit is used to lowly amplify the electrical signals transmitted by the preamplification circuit and transmit them to the second peak hold circuit;

[0020] The first peak hold circuit is used to perform peak holding processing on the electrical signals transmitted by the first-stage main amplification circuit and compare them with the preset threshold of the trigger circuit; If the peak exceeds the set threshold, the trigger circuit sends a trigger signal to the level conversion circuit, and after level conversion, it is sent to the FPGA, and the FPGA controls the AD collector to start collection; If the peak does not exceed the set threshold, the signal processing ends;

[0021] The level conversion circuit is used to convert the voltage of the output signal of the trigger circuit into a voltage recognizable by the FPGA;

[0022] The second peak holding circuit is used to perform peak holding processing on the electrical signal transmitted by the secondary main amplifier circuit and transmit the processed signal to the AD collector.

[0023] As an improvement of the above technical solution, the second preamplifier board includes a first silicon sensor inner area processing circuit, a first silicon sensor outer area processing circuit, and a second silicon sensor processing circuit;

[0024] The first silicon sensor inner area processing circuit is used to process the electrical signal generated in the inner area of the first silicon sensor and transmit it to the AD collector;

[0025] The first silicon sensor outer area processing circuit is used to process the electrical signal generated in the outer area of the first silicon sensor and transmit it to the AD collector;

[0026] The second silicon sensor processing circuit is used to process the electrical signal generated by the second silicon sensor and transmit it to the AD collector.

[0027] As an improvement of the above technical solution, both the first silicon sensor inner area processing circuit and the second silicon sensor processing circuit include: a preamplifier circuit, a primary main amplifier circuit, a secondary main amplifier circuit, a first peak holding circuit, a second peak holding circuit, a trigger circuit, an AD collector, and a level conversion circuit;

[0028] The preamplifier circuit is used to perform charge-voltage conversion on the electrical signal transmitted by the inner area of the first silicon sensor or the second silicon sensor and transmit it to the primary main amplifier circuit and the secondary main amplifier circuit respectively;

[0029] The primary main amplifier circuit is used to highly amplify the electrical signal transmitted by the preamplifier circuit and transmit it to the first peak holding circuit;

[0030] The secondary main amplifier circuit is used to lowly amplify the electrical signal transmitted by the preamplifier circuit and transmit it to the second peak holding circuit;

[0031] The first peak holding circuit is used to perform peak holding processing on the electrical signal transmitted by the primary main amplifier circuit and compare it with the preset threshold of the trigger circuit; if the peak exceeds the set threshold, the trigger circuit sends a trigger signal to the level conversion circuit, and after level conversion, it is sent to the FPGA, and the FPGA controls the AD collector to start collecting; if the peak does not exceed the set threshold, the signal processing ends;

[0032] The level conversion circuit is used to convert the voltage of the output signal of the trigger circuit into a voltage recognizable by the FPGA;

[0033] The second peak-holding circuit is used to perform peak-holding processing on the electrical signals transmitted by the secondary main amplification circuit and transmit the processed signals to the multi-channel AD collector.

[0034] As an improvement to the above technical solution, the first outer area processing circuit includes: a pre-amplification circuit, a main amplification circuit, a peak-holding circuit, a trigger circuit, an AD collector, and a level conversion circuit;

[0035] The pre-amplification circuit is used to perform charge-voltage conversion on the electrical signals transmitted by the outer area of the first silicon detector and transmit them to the main amplification circuit;

[0036] The main amplification circuit is used to amplify the electrical signals output by the pre-amplification circuit and transmit them to the peak-holding circuit;

[0037] The peak-holding circuit is used to perform peak-holding processing on the electrical signals transmitted by the main amplification circuit and compare them with the preset threshold of the trigger circuit; if the peak exceeds the set threshold, the trigger circuit sends a trigger signal to the level conversion circuit, and after level conversion, it is sent to the FPGA, and the FPGA controls the AD collector to start acquisition; if the peak does not exceed the set threshold, the signal processing ends;

[0038] The level conversion circuit is used to convert the voltage of the signal output by the trigger circuit into a voltage recognizable by the FPGA.

[0039] As an improvement to the above technical solution, the detector further includes a chassis;

[0040] The chassis is a cage-like multi-layer structure, and a printed circuit board is installed on each layer; there are three printed circuit boards in total, including: an amplification board, an analog board, and a computer board;

[0041] The amplification board, the analog board, and the computer board are connected through a printed board connector;

[0042] The first pre-amplification board and the second pre-amplification board are installed in the direction inside the probe where the silicon sensor is not installed;

[0043] The AD collector and the FPGA control circuit are arranged on the computer board.

[0044] As an improvement to the above technical solution, the detector further includes: an external collimator and a permanent magnet; the probe further includes a housing;

[0045] The housing is used to install the collimator and fix the internal printed circuit board and the sensor module;

[0046] The collimator is used to determine the field of view;

[0047] The permanent magnet is used to deflect electrons and prevent them from incident on the detector.

[0048] As an improvement to the above technical solution, the circuit module further includes: a communication circuit, a storage circuit, and a power supply module;

[0049] The communication circuit is used to realize the communication between the FPGA control circuit and the satellite platform;

[0050] The storage circuit is used to store the data cached by the FPGA control circuit after packaging;

[0051] The power supply module is used to convert the power supply provided by the satellite platform into the power supply required by the detector.

[0052] As an improvement to the above technical solution, the scintillator sensor is a CsI scintillator sensor.

[0053] Based on the original detection technology, the present invention adds a scintillator detector and its signal readout circuit. The scintillator is in a cube shape, and two thin silicon sensors are arranged on each of three of its faces to measure medium-energy protons and at the same time serve as a trigger for high-energy protons. After the high-energy protons enter the scintillator, the emitted light is collected by the SIPM, and the backend circuit processes this signal to determine the energy of the high-energy protons. Since the scintillator is shared in three directions, the volume of the probe is also reduced.

[0054] According to the calibration results of the ground accelerator, this detector has a linear energy response to medium-energy protons and the signals of the scintillator, and has a very high energy resolution. The detection energy range of this detector is: 30 keV to 150 MeV.

[0055] The advantages of the present invention compared with the prior art are as follows:

[0056] 1. This application uses a signal processing circuit for detecting protons with a CsI scintillator;

[0057] 2. The instrument has a miniaturized design that integrates medium-energy proton detection and high-energy proton detection;

[0058] 3. The technical solution of this application can integrate traditional high-energy proton detection and medium-energy proton detection into a single unit, avoid detection errors caused by the superposition of multiple sensors, and at the same time, due to the multi-directional detection sharing the same scintillator detector, the volume of the instrument probe is optimized, saving resources such as weight, volume, and power consumption;

[0059] 4. The implementation solution of this application can be directly applied to the detection of medium and high energy protons in satellite orbits. Description of the Drawings

[0060] Figure 1(a) is a schematic diagram of the overall structure of the medium- and high-energy proton detector, and Figure 1(b) is a cross-sectional view of the medium- and high-energy proton detector;

[0061] Figure 2(a) is a structural diagram of the probe of the medium- and high-energy proton detector, and Figure 2(b) is a cross-sectional view of the high-energy proton detector;

[0062] Figure 3 is the electrical principle block diagram of the medium- and high-energy proton detector;

[0063] Figure 4 is the electrical principle block diagram of the scintillator detector;

[0064] Figure 5 is the three-dimensional sketch of the medium- and high-energy proton detector;

[0065] Figure 6 is the three-view drawing of the medium- and high-energy proton detector. Among them, Figure 6(a) is the front view, Figure 6(b) is the side view, and Figure 6(c) is the top view;

[0066] Figure 7 is another schematic diagram of the overall structure of the medium- and high-energy proton detector. Specific implementation mode

[0067] The technical solution provided by the present invention will be further described below in conjunction with the embodiments.

[0068] Embodiment 1

[0069] 1. Composition and connection relationship

[0070] The schematic diagram of the overall structure of the medium- and high-energy proton detector in Embodiment 1 is shown in Figure 1(a), and the cross-sectional view is shown in Figure 1(b).

[0071] The medium- and high-energy proton detector is composed of three parts: an integrated probe composed of a silicon sensor and a scintillator, a circuit board, and a chassis structure. The main structure of the chassis is a cage type, with a total of three layers, and a circuit board is installed inside each layer structure. There are 3 printed circuit boards, namely 1 amplifier board (used to amplify the signal output by the probe and supply power to the sensor and each circuit module), 1 analog board (used to process the signal of the amplifier board and output it to the computer board for acquisition), and 1 computer board (used to collect data and package and communicate the data).

[0072] As shown in Figure 2(a), it is the structural diagram of the probe of the medium- and high-energy proton detector, and as shown in Figure 2(b), it is the cross-sectional view of the high-energy proton detector;

[0073] The probe is fixed above the first-layer structure, including a housing, two preamplifier circuit boards (preamplifier board 1 and preamplifier board 2), and an integrated sensor body. The housing is used to install the external collimator and at the same time fix the internal circuit boards and the sensor structure. The integrated sensor body includes silicon sensors in three directions and an internal scintillator sensor. Nine SiPMs are evenly distributed on one side of the scintillator for light collection and conversion, and its signal processing circuit board (preamplifier board 1) is next to the collection surface; The signal processing of the silicon sensors in three directions shares one circuit board (preamplifier board 2), which is arranged below the entire probe interior.

[0074] The signals output by the probe and the power supply traces are welded to the amplifier board through the openings in the first-layer chassis structure; the amplifier board, the analog board, and the computer board are connected through printed circuit board connectors.

[0075] 2. Detection Scheme and Working Principle

[0076] The medium- and high-energy proton detector consists of a sensor system, namely an integrated probe, electronic circuits, and a mechanical structure. The sensor system mainly includes a collimator, a deflection magnet, a light-shielding layer, a silicon detector system (two silicon sensors A / B, where the first sensor A is further divided into 2 sensitive areas), a CsI scintillator (D), and its SiPM light collector (E).

[0077] Assume that the direction perpendicular to the instrument installation surface and facing downwards (towards the ground) is the -Z direction, then the detection directions are the +Z direction, the +Y direction, and the +X direction respectively. The total opening angle in each direction is 60°×60°.

[0078] There are respective proton detection and measurement systems (A / B) in three mutually perpendicular (X / Y / Z) directions. In addition, the three measurement systems share a scintillator energy detector (D). In each direction, it can be considered an independent telescope measurement system, except that it shares an energy detector D. The detection system in each direction can independently measure medium-energy protons and high-energy protons in their respective directions.

[0079] In order to exclude the interference of electrons in proton measurement, especially in medium-energy proton measurement, a permanent magnet is set at the front end of each detection system to deflect electrons so that they cannot enter the detector system, achieving the purpose of discrimination and improving measurement accuracy.

[0080] The geometric factor of the inner region A1 of sensor A is small, and A1 / B is used to measure medium-energy protons with a very high flux in space; High-energy protons need to be measured jointly using A2 / B, D, and E detectors. Since the sensitive area of these detectors is large and the geometric factor is also large, they are suitable for measuring high-energy protons with a lower flux. The scintillator D detector can block higher-energy protons for measuring even higher-energy protons. Since the flux of medium-energy protons is much higher than that of high-energy protons, the size of the sensitive area in Embodiment 1 of the present invention is The size of the outer sensitive area is The area ratio of the inner and outer regions is 1:8. The inner region is circular and is combined with the second sensor to measure medium-energy protons; the outer region is annular and is combined with the second silicon sensor and the scintillator sensor to measure high-energy protons, and they are isolated by a high-resistance channel in the middle.

[0081] 3. Electronics implementation scheme

[0082] The detection of medium- and high-energy protons includes silicon semiconductor detectors in 3 directions, with 2 pieces in each direction. The first sensor in each direction is further divided into an inner region and an outer region. Therefore, there are a total of 9 sensitive areas in 3 directions. The signals of the sensors in each sensitive area are output separately. After being amplified and peak-held, the signals are collected by A / D; the optical signals output by the scintillator are converted into electrical signals by SiPM, and after passing through the amplification and peak-hold circuits, they are also output to A / D for collection.

[0083] The block diagram of the electronics principle is as Figure 3 shown. The circuit modules include a preamplifier circuit, a main amplifier circuit, a peak-hold circuit, a trigger circuit, an A / D conversion circuit, a high-voltage circuit, an FPGA control circuit, a 422 communication circuit, a storage circuit, a telemetry interface, and a power interface circuit.

[0084] In the above implementation scheme, the silicon detector and its signal processing already have a mature circuit. The preamplifier circuits of the silicon detectors in three directions are located on the preamplifier board 1; while the CsI scintillator and its signal processing circuit are for the first time in proton detection. The SiPM array consists of 9 pieces of MICROFC-60035-SMT, and the sensitive area of each piece is 6mm×6mm. In this scheme, 9 pieces of SiPM are used in parallel and are closely attached to the window surface of the CsI scintillator. The cathode and anode leads of the SiPM are welded near the preamplifier board 2.

[0085] The implementation scheme of the preamplifier circuit for scintillator detection in this application is as Figure 4 shown:

[0086] Among them, Rs = 10Ω, C1 = 0.1uF, C2 = 1pF, R1 = 1KΩ, R2 = 10Ω,

[0087] C3 = 10nF, R3 = R4 = 7.5KΩ, C4 = C5 = 12pF, R5 = 6.2KΩ,

[0088] The bias voltage of the SiPM, Vbias = +30V.

[0089] The principle of the scintillator detection circuit is as follows: The light emitted after particles enter the scintillator is collected by the SIPM array and undergoes photoelectric conversion. The generated current pulse signal is amplified by the transimpedance amplifier OPA656 to form a voltage pulse. This pulse enters the amplifier circuit composed of the operational amplifier LM6172 and the resistor-capacitor network and is converted into a positive pulse to facilitate the acquisition by the subsequent circuit.

[0090] The output signals of the preamplifier board 1 and the preamplifier board 2 are transmitted to the amplifier board through cables for amplification, and then enter the analog board for peak holding. At the same time, a trigger signal is output to notify the computer board to perform AD conversion on the peak-hold signal. Finally, the computer board preprocesses, packs the data, and communicates with the platform. The first preamplifier board and the second preamplifier board are installed in the direction inside the probe where the silicon sensor is not installed, so as to avoid blocking the silicon sensor. The three-dimensional sketch and the three-view drawing of the structure of the medium and high energy proton detector are as Figure 5 shown in Figure 6, where Figure 6(a) is the front view, and Figure 6

[0091] (b) is the side view, and Figure 6(c) is the top view. Specific implementation manner:

[0093] The detector chassis is of a cage-like structure, divided into three layers. The first layer has a connector X01, which is for power supply and telemetry contacts; the second layer has a connector X02, which is used for 422 communication with the satellite platform.

[0094] The detector probe is fixed on the first-layer structure, and the mounting surface of the probe is the mounting surface of the detector and the satellite platform.

[0095] The probe part needs to extend out of the satellite cabin panel without obstruction within the detection fields of view in three directions.

[0096] Embodiment 2

[0097] As Figure 7 shown, it is a schematic diagram of the overall structure of the medium and high energy proton detector in Embodiment 2. The sensor in this detector is square.

[0098] From the above specific description of the present invention, it can be seen that this application realizes the integration of traditional high-energy proton detection and medium-energy proton detection into one single machine, avoiding the detection error caused by the superposition of multiple sensors. At the same time, since the same scintillator detector is shared for detection in multiple directions, the volume of the instrument probe is optimized, saving resources such as weight, volume, and power consumption.

[0099] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit them. Although the present invention has been described in detail with reference to the embodiments, those of ordinary skill in the art should understand that any modification or equivalent replacement of the technical solutions of the present invention does not depart from the spirit and scope of the technical solutions of the present invention, and they should all be covered within the scope of the claims of the present invention.

Claims

1. A spaceborne medium- and high-energy proton detector, which is carried on a satellite platform, and is characterized in that, The detector includes a probe; the probe includes: a sensor module; The sensor module includes: a cubic scintillator sensor and six silicon sensors; wherein, every two silicon sensors form a group and are respectively arranged on three faces of the scintillator sensor; on one face of the scintillator sensor where no silicon sensor is arranged, multiple silicon photomultiplier tubes (SiPMs) are arranged. In the first silicon sensor and the second silicon sensor of each group of silicon sensors, the incident surface of the first silicon sensor is divided into an inner area and an outer area according to a set area ratio, and the center points of both the inner area and the outer area are the center of the incident surface; the inner area and the outer area are isolated by a high-resistance channel; the geometric factor of the inner area is small, and the geometric factor of the outer area is large. The inner area of the first silicon sensor and the second silicon sensor are used to detect medium-energy protons and respectively generate electrical signals. The outer area of the first silicon sensor, the second silicon sensor, and the scintillator sensor are used to detect high-energy protons. Among them, the outer area of the first silicon sensor and the second silicon sensor generate electrical signals, and the scintillator sensor generates optical signals; the SiPMs are used to convert the optical signals generated by the scintillator sensor into electrical signals.

2. The spaceborne medium and high energy proton detector according to claim 1, characterized in that, The detector further includes a circuit module; the circuit module includes: a first preamplifier board, a second preamplifier board, an AD collector, and an FPGA control circuit. The first preamplifier board, which is adjacent to the SiPMs, is used to process the electrical signals transmitted by the SiPMs. The second preamplifier board is used to process the electrical signals output by the inner area of the first silicon sensor, the outer area of the first silicon sensor, and the second silicon sensor. The AD collector is used to collect and perform AD conversion on the signals transmitted by the first preamplifier board and the second preamplifier board, and then transmit them to the FPGA control circuit. The FPGA control circuit is used to pack and cache the signals transmitted by the AD collector and then transmit them to the satellite platform.

3. The spaceborne medium- and high-energy proton detector according to claim 2, wherein The first preamplifier board includes: a preamplification circuit, a first-stage main amplification circuit, a second-stage main amplification circuit, a first peak hold circuit, a second peak hold circuit, a trigger circuit, and a level conversion circuit. The preamplification circuit is used to amplify the electrical signals transmitted by the SiPMs and respectively transmit them to the first-stage main amplification circuit and the second-stage main amplification circuit. The first-stage main amplification circuit is used to highly amplify the electrical signals transmitted by the preamplification circuit and then transmit them to the first peak hold circuit. The second-stage main amplification circuit is used to lowly amplify the electrical signals transmitted by the preamplification circuit and then transmit them to the second peak hold circuit. The first peak hold circuit is used to perform peak holding processing on the electrical signals transmitted by the first-stage main amplification circuit and compare them with the preset threshold of the trigger circuit; if the peak exceeds the set threshold, the trigger circuit sends a trigger signal to the level conversion circuit, and after level conversion, it is sent to the FPGA, and the FPGA controls the AD collector to start collection; if the peak does not exceed the set threshold, the signal processing ends. The level conversion circuit is used to convert the voltage of the signal output by the trigger circuit into a voltage recognizable by the FPGA. The second peak hold circuit is used to perform peak holding processing on the electrical signals transmitted by the second-stage main amplification circuit and then transmit the processed signals to the AD collector.

4. The spaceborne medium- and high-energy proton detector according to claim 2, wherein The second preamplifier board includes a first silicon sensor inner area processing circuit, a first silicon sensor outer area processing circuit, and a second silicon sensor processing circuit; The first silicon sensor inner area processing circuit is used to process the electrical signals generated in the first silicon sensor inner area and transmit them to the AD collector; The first silicon sensor outer area processing circuit is used to process the electrical signals generated in the first silicon sensor outer area and transmit them to the AD collector; The second silicon sensor processing circuit is used to process the electrical signals generated by the second silicon sensor and transmit them to the AD collector.

5. The spaceborne medium- and high-energy proton detector according to claim 4, characterized in that, Both the first silicon sensor inner area processing circuit and the second silicon sensor processing circuit include: a preamplifier circuit, a first-stage main amplifier circuit, a second-stage main amplifier circuit, a first peak hold circuit, a second peak hold circuit, a trigger circuit, an AD collector, and a level conversion circuit; The preamplifier circuit is used to perform charge-voltage conversion on the electrical signals transmitted from the first silicon sensor inner area or the second silicon sensor and transmit them to the first-stage main amplifier circuit and the second-stage main amplifier circuit respectively; The first-stage main amplifier circuit is used to highly amplify the electrical signals transmitted from the preamplifier circuit and transmit them to the first peak hold circuit; The second-stage main amplifier circuit is used to lowly amplify the electrical signals transmitted from the preamplifier circuit and transmit them to the second peak hold circuit; The first peak hold circuit is used to perform peak holding processing on the electrical signals transmitted from the first-stage main amplifier circuit and compare them with the preset threshold of the trigger circuit; if the peak exceeds the set threshold, the trigger circuit sends a trigger signal to the level conversion circuit, which is converted and then sent to the FPGA, and the FPGA controls the AD collector to start collecting; if the peak does not exceed the set threshold, the signal processing ends; The level conversion circuit is used to convert the voltage of the signal output by the trigger circuit into a voltage recognizable by the FPGA; The second peak hold circuit is used to perform peak holding processing on the electrical signals transmitted from the second-stage main amplifier circuit and transmit the processed signals to the multi-channel AD collector.

6. The on-board medium and high energy proton detector according to claim 4, wherein The first silicon sensor outer area processing circuit includes: a preamplifier circuit, a main amplifier circuit, a peak hold circuit, a trigger circuit, an AD collector, and a level conversion circuit; The preamplifier circuit is used to perform charge-voltage conversion on the electrical signals transmitted from the first silicon sensor outer area and transmit them to the main amplifier circuit; The main amplifier circuit is used to amplify the electrical signals output by the preamplifier circuit and transmit them to the peak hold circuit; The peak hold circuit is used to perform peak holding processing on the electrical signals transmitted from the main amplifier circuit and compare them with the preset threshold of the trigger circuit; if the peak exceeds the set threshold, the trigger circuit sends a trigger signal to the level conversion circuit, which is converted and then sent to the FPGA, and the FPGA controls the AD collector to start collecting; if the peak does not exceed the set threshold, the signal processing ends; The level conversion circuit is used to convert the voltage of the signal output by the trigger circuit into a voltage recognizable by the FPGA.

7. The on-board medium and high energy proton detector according to claim 2, characterized in that, The detector further includes a chassis; The chassis is a cage-like multi-layer structure, and a printed circuit board is installed on each layer; There are three printed circuit boards in total, including: an amplifier board, an analog board, and a computer board; The amplifier board, analog board, and computer board are connected through a printed circuit board connector; The first preamplifier board and the second preamplifier board are installed in the direction inside the probe where the silicon sensor is not installed; The AD collector and the FPGA control circuit are arranged on the computer board.

8. The spaceborne medium- and high-energy proton detector according to claim 1, characterized in that, The detector further includes: an external collimator and a permanent magnet; the probe further includes a housing; The housing is used to install the collimator and fix the internal printed circuit board and the sensor module; The collimator is used to determine the field of view; The permanent magnet is used to deflect electrons to avoid electrons from incident on the detector.

9. The spaceborne medium and high energy proton detector according to claim 2, characterized in that The circuit module further includes: a communication circuit, a storage circuit, and a power supply module; The communication circuit is used to realize the communication between the FPGA control circuit and the satellite platform; The storage circuit is used to store the data cached by the FPGA control circuit after being packaged; The power supply module is used to convert the power provided by the satellite platform into the power required by the detector.

10. The on-orbit medium and high energy proton detector according to any one of claims 1-9, characterized in that, The scintillator sensor is a CsI scintillator sensor.

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