Mini LED COG line structure and manufacturing method thereof

Abstract

The application provides a Mini LED COG line structure and a manufacturing method thereof, and comprises a bearing substrate, a primer layer, a first transition film layer, a first metal layer, a second transition film layer, an insulating layer, a first photosensitive protective layer, a third transition film layer, a second metal layer, an insulating protective layer and a second photosensitive protective layer are sequentially arranged on the bearing substrate. Compared with the prior art, the transition film layer and the metal layer are combined, the transition film layer has the advantages of metal bond combination and diffusion, the high adhesion between the film layer and the metal layer is improved, good structural stability is achieved, and the thickness and efficiency problems of the thick metal layer are further improved by the combination of the metal layer and the transition film layer. Moreover, the structure of the application is simple, the preparation method is simple, and mass production is possible.

Description

Technical Field

[0001] The present invention belongs to the field of display technology, and specifically relates to a Mini LED COG circuit structure and a manufacturing method thereof. Background Art

[0002] With the continuous advancement of science and technology, consumers are placing increasingly higher demands on the display industry. With the growing development of new display technologies such as MiniLED and MicroLED, and as these technologies upgrade to higher pixel density products, the advantages of COG (Chip on Glass)—directly bonding LED chips to glass substrates and using TFTs (thin-film transistors) to drive MicroLED displays—will become increasingly apparent as MiniLED backlighting reaches the stage of extreme light control and ultra-high zoning, and MicroLEDs reach the ten-micron or even nanometer range.

[0003] The core foundation of COG technology is the use of thick metal plating on glass substrates to create ultra-fine metal integrated circuits on glass. However, currently, significant challenges exist in the coating thickness and metal film stacking process. Controlling the adhesion between the individual film layers is difficult, and there are issues with the film layer peeling and poor adhesion to the thick metal layer.

[0004] The main solutions currently proposed for addressing the issues of poor adhesion of thick metal layers and low stacking efficiency are: 1) Electroplating: Currently, the electroplating copper process is immature for use on glass substrates, resulting in substandard thickness and poor uniformity of the electroplated thick metal layers. 2) Conventional PVD thick copper plating: This involves stacking copper layers to achieve the desired coating. However, the current PVD thick copper plating process is inefficient and has difficulty addressing film adhesion issues. Summary of the Invention

[0005] The present invention aims to provide a Mini LED COG circuit structure and its fabrication method. The transition film layer combines with a metal layer. The transition film layer has the advantages of metallic bonding and diffusion, improving the adhesion between the film layer and the metal layer and providing good structural stability. Furthermore, the combination of the metal layer and the transition film layer further improves the thickness and efficiency issues of thick metal layers. Furthermore, the present invention has a simple structure and a simple fabrication method, making it suitable for mass production.

[0006] The specific technical solutions of the present invention are as follows:

[0007] A Mini LED COG circuit structure includes a carrier substrate, on which are arranged in sequence: a base layer, a first transition film layer, a first metal layer, a second transition film layer, an insulating layer, a first photosensitive protective layer, a third transition film layer, a second metal layer, an insulating protective layer, and a second photosensitive protective layer.

[0008] The thickness of the carrier substrate is 0.1 to 10 mm;

[0009] The material of the carrier substrate is selected from but not limited to aluminosilicate glass, soda-lime glass, borosilicate glass or quartz glass.

[0010] The thickness of the primer layer is 0.01 to 10 μm.

[0011] The material of the base layer is selected from but not limited to one or more of silicon nitride, silicon dioxide, molybdenum, titanium or nickel. The use of the above materials not only has the function of base protection, but also can increase adhesion and improve the structure.

[0012] The thickness of the first transition film layer is 0.01-10 μm.

[0013] The material of the first transition film layer includes, but is not limited to, one or more of a molybdenum-niobium alloy, a molybdenum-copper alloy, a titanium-copper alloy, and a nickel-copper alloy.

[0014] The thickness of the first metal layer is 0.1 to 100 μm;

[0015] The material of the first metal layer includes, but is not limited to, one or more of silver, gold, copper, molybdenum-niobium alloy, molybdenum-copper alloy, titanium-copper alloy, and nickel-copper alloy.

[0016] The thickness of the second transition film layer is 0.1-10 μm.

[0017] The material of the second transition film layer is but not limited to one or more of molybdenum-niobium alloy, molybdenum-copper alloy, titanium-copper alloy, and nickel-copper alloy;

[0018] The thickness of the insulating layer is 0.1 to 5 μm;

[0019] The material of the insulating layer includes but is not limited to one or more of silicon nitride and silicon dioxide.

[0020] The thickness of the first photosensitive protective layer is 5 to 30 μm.

[0021] The first photosensitive protective layer includes but is not limited to one or more of semiconductor photoresist, OC photoresist, ultraviolet photoresist, and negative photoresist.

[0022] The thickness of the third transition layer is 0.1-10 μm.

[0023] The material of the third transition layer includes but is not limited to one or more of silver, gold, copper, molybdenum-niobium, molybdenum-copper, titanium-copper, and nickel-copper alloy.

[0024] The thickness of the second metal layer is 0.1-10 μm.

[0025] The material of the second metal layer includes, but is not limited to, one or more of silver, gold, and copper.

[0026] The thickness of the insulating protective layer is 0.1 to 5 μm;

[0027] The material of the insulating protection layer includes but is not limited to one or more of silicon nitride and silicon dioxide.

[0028] The thickness of the second photosensitive protective layer is 5 to 15 μm.

[0029] The material of the second photosensitive protective layer includes but is not limited to one or more of silicon nitride, silicon dioxide, semiconductor photoresist, OC photoresist, ultraviolet photoresist, and negative photoresist.

[0030] The present invention forms each film layer by electroplating, chemical solution deposition, chemical vapor deposition, vacuum evaporation, and vacuum magnetron sputtering. The circuits are made in the formed film layer by dry etching and wet etching.

[0031] The present invention provides a method for manufacturing a Mini LED COG circuit structure, comprising the following steps:

[0032] 1) Surface treatment of the carrier substrate;

[0033] 2) The single-side layer of the carrier substrate obtained in step 1) is sequentially prepared with a primer layer, a first transition film layer, a first metal layer, and a second transition film layer, and then wet-etched;

[0034] 3) Prepare an insulating layer and then perform dry etching;

[0035] 4) Make the first photosensitive protective layer, then expose and develop;

[0036] 5) Make the third transition film layer and the second metal layer, and then wet etch;

[0037] 6) Prepare an insulating protective layer and perform dry etching;

[0038] 7) Prepare a second photosensitive protective layer, expose and develop it to form a complete integrated circuit structure.

[0039] Step 1) The surface treatment includes cleaning and plasma cleaning, and the overall cleaning time is 5s-10s;

[0040] In step 2), the base layer of the carrier substrate is prepared by vacuum magnetron sputtering, with a coating power of 6 to 9 kW, a coating pressure of 300 to 600 kPa, a coating time of 1 to 2 minutes, and a heating temperature of 200 to 300°C.

[0041] In step 2), the first transition film layer, the first metal layer, and the second transition film layer are prepared by vacuum magnetron sputtering or electroplating;

[0042] When vacuum magnetron sputtering is used, the coating power is 13 to 20 kW, the coating pressure is 300 to 500 kPa, and the coating time is 3 to 5 minutes.

[0043] Preferably, in step 2), when the first metal layer is prepared by vacuum magnetron sputtering, the chamber heating can be turned off; when the first transition film layer and the second transition film layer are prepared by vacuum magnetron sputtering, the heating temperature is 200-300° C.;

[0044] When electroplating is used, the electroplating time is 6 to 10 minutes and the current density is 1 to 1.5 A / dm²;

[0045] In step 2), after the first transition film layer, the first metal layer, and the second transition film layer are prepared, wet etching is performed using a commercially available etching solution with the following etching parameters: etching time of 8 to 15 minutes, temperature of 25 to 30° C., and rinsing rate of 80 to 100 ml / s;

[0046] In step 3), the insulating layer is prepared by chemical vapor deposition, with a deposition time of 110 to 120 minutes and a temperature of 450° C.

[0047] Step 3) After the insulating layer is prepared, dry etching is performed at a temperature of 30°C to 85°C and a pressure of 200 kPa to 450 kPa for 8 to 15 minutes. The insulating layer is mainly used to form an electrical connection between the first metal layer and the second metal layer and the circuit design through dry etching.

[0048] In step 4), the preparation process of the first photosensitive protective layer is coating, exposure, and development; the photosensitive protective layer material is coated by slit coating, the coating time is 10s to 20s, the coating surface drying temperature is 70 to 100°C, the exposure energy is 100 to 150J, and the exposure time is 3 to 10 minutes; the development time is 2 to 3 minutes, and the development speed is 2.5m / min.

[0049] In step 5), the process of forming the third transition film layer and the second metal layer is vacuum magnetron sputtering or electroplating;

[0050] When vacuum magnetron sputtering is used for preparation, the coating power is 13 to 20 kW, the coating pressure is 300 to 500 kPa, and the coating time is 3 to 5 minutes.

[0051] In step 5), when the second metal layer is formed by vacuum magnetron sputtering, the chamber heating temperature can be turned off. When the third transition film layer is formed, the heating temperature is 200-300°C.

[0052] In step 5), when electroplating is used, the process parameters are: time is 6 to 10 minutes, current density is 1 to 1.5 A / dm²;

[0053] In step 5), after the third transition film layer and the second metal layer are prepared, wet etching is performed. The etching solution is a commercially available etching solution. The etching parameters are: time is 3 to 5 minutes and temperature is 25 to 30°C.

[0054] In step 6), the insulating protective layer is prepared by chemical vapor deposition, with a deposition time of 110 to 120 minutes and a temperature of 450°C. After preparation, dry etching is performed at a temperature of 30°C to 85°C, a pressure of 200 kPa to 450 kPa, and a time of 8 to 15 minutes. The main function of the insulating layer is to expose the positive and negative electrodes by drilling holes through dry etching.

[0055] In step 7), the second photosensitive protective layer is prepared by coating, exposing, and developing. The photosensitive protective layer material is applied using a slit coating method with a coating time of 10 to 20 seconds and a surface drying temperature of 70 to 100°C. The exposure energy is 100 to 150 J for 3 to 10 minutes, and the development time is 2 to 3 minutes at a development speed of 2.5 m / min. The primary function of the second photosensitive protective layer is to expose the positive and negative electrodes through exposure and development.

[0056] This invention improves the existing thick metal layer structure by combining a transition film layer with a metal layer. The transition film layer has the advantages of metallic bonding and diffusion, ensuring high adhesion between the film layer and the metal layer, and has good structural stability. The combination of the metal layer and the transition film layer further improves the thickness and efficiency of the thick metal layer. This invention effectively solves the adhesion problem of thick metal layers and the demand for higher thickness of thick metal layers. It also has a simple process structure and a high degree of mass production of the film layer structure.

[0057] The present invention improves the Mini LED COG circuit structure without increasing production costs and difficulty, and also has a simple process structure and high product mass production. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] Figure 1 This is a schematic diagram of the Mini LED COG circuit structure of the present invention. DETAILED DESCRIPTION

[0059] The present invention provides a Mini LED COG circuit structure, including a carrier substrate, on which are arranged in sequence: a base layer, a first transition film layer, a first metal layer, a second transition film layer, an insulating layer, a first photosensitive protective layer, a third transition film layer, a second metal layer, an insulating protective layer and a second photosensitive protective layer.

[0060] The thickness of the carrier substrate is 0.1 to 10 mm;

[0061] The material of the carrier substrate is selected from but not limited to aluminosilicate glass, soda-lime glass, borosilicate glass or quartz glass.

[0062] The thickness of the primer layer is 0.01 to 10 μm.

[0063] The material of the base layer is selected from but not limited to one or more of silicon nitride, silicon dioxide, molybdenum, titanium or nickel. The use of the above materials not only has the function of base protection, but also can increase adhesion and improve the structure.

[0064] The thickness of the first transition film layer is 0.01-10 μm.

[0065] The material of the first transition film layer includes, but is not limited to, one or more of a molybdenum-niobium alloy, a molybdenum-copper alloy, a titanium-copper alloy, and a nickel-copper alloy.

[0066] The thickness of the first metal layer is 0.1 to 100 μm;

[0067] The material of the first metal layer includes, but is not limited to, one or more of silver, gold, copper, molybdenum-niobium alloy, molybdenum-copper alloy, titanium-copper alloy, and nickel-copper alloy.

[0068] The thickness of the second transition film layer is 0.1-10 μm.

[0069] The material of the second transition film layer is but not limited to one or more of molybdenum-niobium alloy, molybdenum-copper alloy, titanium-copper alloy, and nickel-copper alloy;

[0070] The thickness of the insulating layer is 0.1 to 5 μm;

[0071] The material of the insulating layer includes but is not limited to one or more of silicon nitride and silicon dioxide.

[0072] The thickness of the first photosensitive protective layer is 5 to 30 μm.

[0073] The first photosensitive protective layer includes but is not limited to one or more of semiconductor photoresist, OC photoresist, ultraviolet photoresist, and negative photoresist.

[0074] The thickness of the third transition layer is 0.1-10 μm.

[0075] The material of the third transition layer includes but is not limited to one or more of silver, gold, copper, molybdenum-niobium, molybdenum-copper, titanium-copper, and nickel-copper alloy.

[0076] The thickness of the second metal layer is 0.1-10 μm.

[0077] The material of the second metal layer includes, but is not limited to, one or more of silver, gold, and copper.

[0078] The thickness of the insulating protective layer is 0.1 to 5 μm;

[0079] The material of the insulating protection layer includes but is not limited to one or more of silicon nitride and silicon dioxide.

[0080] The thickness of the second photosensitive protective layer is 5 to 15 μm.

[0081] The material of the second photosensitive protective layer includes but is not limited to one or more of silicon nitride, silicon dioxide, semiconductor photoresist, OC photoresist, ultraviolet photoresist, and negative photoresist.

[0082] The method for manufacturing a Mini LED COG circuit structure includes the following steps:

[0083] 1) Surface treatment of the carrier substrate: including cleaning and plasma cleaning, the overall cleaning time is 5s-10s;

[0084] 2) A primer layer, a first transition film layer, a first metal layer, and a second transition film layer are sequentially prepared on the single-side layer of the carrier substrate obtained in step 1), and then wet-etched, specifically:

[0085] The base layer of the carrier substrate is prepared using vacuum magnetron sputtering, with a coating power of 6 to 9 kW, a coating pressure of 300 to 600 kPa, a coating time of 1 to 2 minutes, and a heating temperature of 200 to 300°C. The first transition film layer, the first metal layer, and the second transition film layer are then prepared using vacuum magnetron sputtering or electroplating. When using vacuum magnetron sputtering, the coating power is 13 to 20 kW, the coating pressure is 300 to 500 kPa, and the coating time is 3 to 5 minutes. When the first metal layer is prepared by vacuum magnetron sputtering, the chamber heating can be turned off; when the first transition film layer and the second transition film layer are prepared by vacuum magnetron sputtering, the heating temperature is 200-300°C; when electroplating is used, the electroplating time is 6-10 minutes and the current density is 1-1.5 A / dm²; after the first transition film layer, the first metal layer and the second transition film layer are prepared, wet etching is performed using a commercially available etching solution with the following etching parameters: etching time 8-15 minutes, temperature 25-30°C, and rinsing rate 80-100 ml / s.

[0086] 3) Prepare an insulating layer and then perform dry etching, specifically: use chemical vapor deposition to prepare the insulating layer, with a deposition time of 110 to 120 minutes and a temperature of 450°C; after the insulating layer is prepared, perform dry etching at a temperature of 30°C to 85°C, a pressure of 200 kPa to 450 kPa, and a time of 8 to 15 minutes; the main function of the insulating layer is to form an electrical connection between the first metal layer and the second metal layer and through the circuit design by dry etching and drilling;

[0087] 4) Prepare a first photosensitive protective layer. The preparation process of the first photosensitive protective layer is coating, exposure, and development. The photosensitive protective layer material is coated by slit coating, the coating time is 10s to 20s, the coating surface drying temperature is 70 to 100°C, the exposure energy is 100 to 150J, and the exposure time is 3 to 10 minutes. The development time is 2 to 3 minutes and the development speed is 2.5 m / min.

[0088] 5) Then, a third transition film layer and a second metal layer are fabricated, followed by wet etching. The third transition film layer and the second metal layer are fabricated using vacuum magnetron sputtering or electroplating. When using vacuum magnetron sputtering, the coating power is 13-20 kW, the coating pressure is 300-500 kPa, and the coating time is 3-5 minutes. When forming the second metal layer by vacuum magnetron sputtering, the chamber heating temperature can be turned off. When preparing the third transition film layer, the heating temperature is 200-300°C. When using electroplating, the process parameters are: time 6-10 minutes, current density 1-1.5 A / dm². After the third transition film layer and the second metal layer are formed, wet etching is performed using a commercially available etching solution with the following etching parameters: time 3-5 minutes, temperature 25-30°C.

[0089] 6) Prepare an insulating protective layer and perform dry etching. The insulating protective layer is prepared by chemical vapor deposition, with a deposition time of 110 to 120 minutes and a temperature of 450°C. After preparation, dry etching is performed at a temperature of 30°C to 85°C, a pressure of 200 kPa to 450 kPa, and a time of 8 to 15 minutes. The main function of the insulating layer is to expose the positive and negative electrodes by drilling holes through dry etching.

[0090] 7) Prepare a second photosensitive protective layer, expose, and develop to form a complete integrated circuit structure. Specifically, the preparation process for the second photosensitive protective layer includes coating, exposure, and development. The photosensitive protective layer material is applied using a slit coating method with a coating time of 10 to 20 seconds and a surface drying temperature of 70 to 100°C. The exposure energy is 100 to 150 J for 3 to 10 minutes, and the development time is 2 to 3 minutes at a development speed of 2.5 m / min. The primary function of the second photosensitive protective layer is to expose the positive and negative electrodes through exposure and development.

[0091] The following are several preferred embodiments of the present invention:

[0092] Example 1

[0093] A Mini LED COG circuit structure includes a carrier substrate, on which are arranged in sequence: a base layer, a first transition film layer, a first metal layer, a second transition film layer, an insulating layer, a first photosensitive protective layer, a third transition film layer, a second metal layer, an insulating protective layer, and a second photosensitive protective layer.

[0094] The thickness of the carrier substrate is 5 mm, and borosilicate glass is selected.

[0095] The thickness of the base layer is 0.2 μm, and the material is silicon nitride.

[0096] The thickness of the first transition film layer is 1.8 μm, and the material is molybdenum-copper alloy;

[0097] The thickness of the first metal layer is 1.8 μm, and the material is copper.

[0098] The thickness of the second transition film layer is 1.8 μm, and the material is molybdenum-copper alloy;

[0099] The thickness of the insulating layer is 0.2 μm, and the material is silicon nitride;

[0100] The thickness of the first photosensitive protective layer is 10 μm, and the material is semiconductor photoresist;

[0101] The third transition layer has a thickness of 0.3 μm and is made of copper;

[0102] The thickness of the second metal layer is 0.3 μm, and the material is silver;

[0103] The thickness of the insulating protective layer is 0.2 μm, and the material is silicon nitride;

[0104] The second photosensitive protective layer has a thickness of 10 μm and is made of semiconductor photoresist.

[0105] The method for manufacturing the Mini LED COG circuit structure of Example 1 includes the following steps:

[0106] 1) Surface treatment of the carrier substrate; the process includes cleaning and plasma cleaning, and the overall cleaning time is 8s;

[0107] 2) A primer layer, a first transition film layer, a first metal layer, and a second transition film layer were fabricated on the single-sided layer of the carrier substrate obtained in step 1). The primer layer was prepared using vacuum magnetron sputtering with a coating power of 9 kW, a coating pressure of 500 kPa, a coating time of 1 minute, and a heating temperature of 260°C. The first transition film layer, the first metal layer, and the second transition film layer were prepared using electroplating. When preparing the first transition film layer, the electroplating time was 6 minutes and the current density was 1.5 A / dm²; when preparing the first metal layer, the electroplating time was 7 minutes and the current density was 1 A / dm²; when preparing the second transition film layer, the electroplating time was 8 minutes and the current density was 1 A / dm². The heating temperature was turned off when preparing the first metal layer. After the first transition film layer, the first metal layer, and the second transition film layer were prepared, they were wet-etched using a commercially available etchant with the following parameters: a 9-minute etching time, a temperature of 25°C, and a rinsing rate of 90 ml / s.

[0108] 3) An insulating layer is then prepared using a chemical vapor deposition process for 110 minutes at a temperature of 450°C, followed by a dry etching process at a temperature of 45°C, a pressure of 350 kPa, and a time of 10 minutes.

[0109] 4) A first photosensitive protective layer is formed on the insulating layer of the carrier substrate and then exposed and developed; the preparation process of the first photosensitive protective layer is coating, exposure, and development, the coating method is slit coating, the coating time is 12s, the coating surface drying temperature is 80°C, the exposure energy is 120J, the exposure time is 6 minutes, the development time is 2 minutes, and the development speed is 2.5m / minute.

[0110] 5) A third transition film layer and a second metal layer are formed on the first photosensitive protective layer of the carrier substrate and wet-etched. The third transition film layer and the second metal layer are formed by vacuum magnetron sputtering. When forming the third transition film layer, the vacuum magnetron sputtering coating power is 18 kW, the coating pressure is 400 kPa, and the coating time is 3 minutes. When forming the second metal layer, the vacuum magnetron sputtering coating power is 15 kW, the coating pressure is 410 kPa, and the coating time is 3.5 minutes. When forming the third transition film layer, the heating temperature is 280°C. During the second metal layer, the chamber heating temperature is turned off. Wet etching is then performed using a commercially available etching solution with etching parameters of 4 minutes and a temperature of 25°C.

[0111] 6) Prepare the insulating layer. The preparation process of the insulating protective layer is chemical vapor deposition, with a deposition time of 115 minutes and a temperature of 450°C; the subsequent process is dry etching, with a temperature of 55°C and a pressure of 330 thousand Pa, time is 12 minutes.

[0112] 7) Finally, a second photosensitive protective layer is formed to complete the integrated circuit structure. The second photosensitive protective layer is prepared using a slit coating process with a coating time of 12 seconds and a surface drying temperature of 80°C. The exposure energy is 140J, the exposure time is 7 minutes, the development time is 3 minutes, and the development speed is 2.5 m / min. The primary function of the second photosensitive protective layer is to expose the positive and negative electrodes through exposure and development.

[0113] Example 2

[0114] A Mini LED COG circuit structure includes a carrier substrate, on which are arranged in sequence: a base layer, a first transition film layer, a first metal layer, a second transition film layer, an insulating layer, a first photosensitive protective layer, a third transition film layer, a second metal layer, an insulating protective layer, and a second photosensitive protective layer.

[0115] The thickness of the carrier substrate is 3 mm and the material is quartz glass;

[0116] The thickness of the primer layer is 0.3 μm, and the material is molybdenum;

[0117] The thickness of the first transition film layer is 0.4 μm, and the material is nickel-copper alloy;

[0118] The thickness of the first metal layer is 50 μm and the material is gold;

[0119] The thickness of the second transition film layer is 5 μm, and the material is titanium-copper alloy;

[0120] The thickness of the insulating layer is 1 μm; the material is silicon dioxide;

[0121] The thickness of the first photosensitive protective layer is 10 μm, and the material is ultraviolet photoresist;

[0122] The third transition layer has a thickness of 5 μm and is made of copper;

[0123] The thickness of the second metal layer is 3 μm, and the material is gold;

[0124] The thickness of the insulating protective layer is 2 μm and the material is silicon dioxide;

[0125] The thickness of the second photosensitive protective layer is 10 μm; the material is ultraviolet photoresist.

[0126] The method for manufacturing the Mini LED COG circuit structure of Example 2 includes the following steps:

[0127] 1) Surface treatment of the carrier substrate: including cleaning and plasma cleaning, the overall cleaning time is 6s;

[0128] 2) A primer layer, a first transition film layer, a first metal layer, and a second transition film layer are formed on the single-sided layer of the carrier substrate obtained in step 1); the primer layer is prepared by electroplating, with a coating power of 6KW, a coating pressure of 400 kPa, a coating time of 1.5 minutes, and a heating temperature of 230°C; the first transition film layer, the first metal layer, and the second transition film layer are prepared by vacuum magnetron sputtering, and when preparing the first transition film layer, the vacuum magnetron sputtering coating power is 15KW, the coating pressure is 400 kPa, the coating time is 1.5 minutes, and the heating temperature is 230°C. The vacuum magnetron sputtering process was performed at a power of 13 kW, a pressure of 400 kilopascals, and a coating time of 3.5 minutes for the first metal layer. The vacuum magnetron sputtering process was performed at a power of 16 kW, a pressure of 360 kilopascals, and a coating time of 3.5 minutes for the second transition film layer. The heating temperatures for the first and second transition films were 230°C and 250°C, respectively. The heating was turned off during the preparation of the first metal layer. After the first transition film layer, the first metal layer, and the second transition film layer were prepared, wet etching was performed using a commercially available etchant with the following parameters: a time of 8 minutes, a temperature of 27°C, and a rinse rate of 85 ml / s.

[0129] 3) An insulating layer is then prepared using chemical vapor deposition for 115 minutes at 450°C, followed by dry etching at 55°C, 300 kPa, and 11 minutes.

[0130] 4) A first photosensitive protective layer is formed on the insulating layer of the carrier substrate and then exposed and developed; the preparation process of the first photosensitive protective layer is coating, exposure, and development, the coating method is slit coating, the coating time is 16s, the coating surface drying temperature is 89°C, the exposure energy is 145J, the exposure time is 5 minutes, the development time is 2 minutes, and the development speed is 2.5m / minute.

[0131] 5) A third transition film layer and a second metal layer are formed on the first photosensitive protective layer of the carrier substrate and wet-etched. The third transition film layer and the second metal layer are formed by vacuum magnetron sputtering. When forming the third transition film layer, the vacuum magnetron sputtering coating power is 14KW, the coating pressure is 500 kPa, and the coating time is 3.5 minutes. When forming the second metal layer, the vacuum magnetron sputtering coating power is 17KW, the coating pressure is 400 kPa, and the coating time is 3.5 minutes. When forming the third transition film layer, the heating temperature is 240°C. When forming the second metal layer, the chamber heating temperature is turned off. Wet etching is then performed using a commercially available etching solution with etching parameters of 3 minutes and a temperature of 30°C.

[0132] 6) Prepare the insulating layer. The preparation process of the insulating protective layer is chemical vapor deposition, with a deposition time of 1.8 minutes and a temperature of 450°C; the subsequent process is dry etching, with a temperature of 65°C and a pressure of 300 thousand Pa, time is 13 minutes.

[0133] 7) Finally, a second photosensitive protective layer is prepared to form a complete integrated circuit structure: the preparation process of the second photosensitive protective layer is coating, exposure, and development. The coating method is slit coating, the coating time is 12s, the coating surface drying temperature is 90°C, the exposure energy is 120J, the exposure time is 7 minutes, the development time is 3 minutes, and the development speed is 2.5m / min.

[0134] Comparative Example 1

[0135] A Mini LED COG circuit structure includes a carrier substrate, on which are arranged in sequence: a base layer, a first metal layer, an insulating layer, a first photosensitive protective layer, a second metal layer, an insulating protective layer, and a second photosensitive protective layer.

[0136] The thickness of the carrier substrate is 1.1 mm, and borosilicate glass is selected.

[0137] The thickness of the base layer is 1 μm, and the material is silicon nitride.

[0138] The thickness of the first metal layer is 2.5 μm, and the material is copper.

[0139] The thickness of the insulating layer is 0.2 μm, and the material is silicon nitride;

[0140] The thickness of the first photosensitive protective layer is 9 μm, and the material is semiconductor photoresist;

[0141] The thickness of the second metal layer is 2.5 μm, and the material is silver;

[0142] The thickness of the insulating protective layer is 0.2 μm, and the material is silicon nitride;

[0143] The second photosensitive protective layer has a thickness of 10 μm and is made of semiconductor photoresist.

[0144] The manufacturing method of the Mini LED COG circuit structure of Comparative Example 1 includes the following steps:

[0145] 1) Surface treatment of the carrier substrate; the process includes cleaning and plasma cleaning, and the overall cleaning time is 8s;

[0146] 2) A base layer and a first metal layer were fabricated on the single-sided layer of the carrier substrate obtained in step 1). The base layer was prepared using vacuum magnetron sputtering with a coating power of 9 kW, a coating pressure of 500 kPa, a coating time of 1 minute, and a heating temperature of 200°C. The first metal layer was prepared using vacuum magnetron sputtering with a coating power of 11 kW, a coating pressure of 600 kPa, and a coating time of 1 minute. During the preparation of the first metal layer, the heating temperature was turned off. The first metal layer was wet-etched using a commercially available etchant with the following parameters: a 15-minute etching time, a temperature of 25°C, and a rinsing rate of 90 ml / s.

[0147] 3) Prepare the insulating layer again. The preparation process is chemical vapor deposition, the time is 110 minutes, the temperature is 450°C, and the subsequent process is dry etching, the temperature is 45°C, the pressure is 350 kPa, and the time is 10 minutes.

[0148] 4) A first photosensitive protective layer is formed on the insulating layer of the carrier substrate and then exposed and developed; the preparation process of the first photosensitive protective layer is coating, exposure, and development, the coating method is slit coating, the coating time is 12s, the coating surface drying temperature is 80°C, the exposure energy is 120J, the exposure time is 6 minutes, the development time is 2 minutes, and the development speed is 2.5m / minute.

[0149] 5) A second metal layer was formed on the first photosensitive protective layer of the carrier substrate and wet-etched. The second metal layer was formed using vacuum magnetron sputtering with a coating power of 15 kW, a coating pressure of 410 kPa, and a coating time of 10 minutes. The chamber heating temperature was turned off during the second metal layer formation. Wet etching was then performed using a commercially available etching solution with etching parameters of 10 minutes and a temperature of 25°C.

[0150] 6) Prepare the insulating layer. The preparation process of the insulating protective layer is chemical vapor deposition, with a deposition time of 115 minutes and a temperature of 450°C; the subsequent process is dry etching, with a temperature of 55°C and a pressure of 330 thousand Pa, time is 12 minutes.

[0151] 7) Finally, a second photosensitive protective layer is formed to complete the integrated circuit structure. The second photosensitive protective layer is prepared using a slit coating process with a coating time of 12 seconds and a surface drying temperature of 80°C. The exposure energy is 140J, the exposure time is 7 minutes, the development time is 3 minutes, and the development speed is 2.5 m / min. The primary function of the second photosensitive protective layer is to expose the positive and negative electrodes through exposure and development.

[0152] The Mini LED COG circuit structures of Examples 1, 2, and Comparative Example 1 were tested. The test method is as follows: The basic principle of stress measurement using X-ray diffraction is that when a beam of radiation with a wavelength of λ is irradiated onto a polycrystalline body, a maximum intensity of the reflected X-rays (i.e., a diffraction peak) is received at a certain angle. The relationship between the wavelength of the X-rays, the diffraction interplanar spacing d, and the diffraction angle 2θ follows Bragg's law: 2dsinθ=nλ (n=1, 2, 3...). When stress causes the lattice spacing d to change, the diffraction angle 2θ changes accordingly. Therefore, to determine the change in the interplanar spacing d, it is sufficient to measure the change in the diffraction angle 2θ. Using the change in the diffraction angle, the stress magnitude in a certain direction of the material can be calculated based on the relevant equations of elastic mechanics.

[0153] Test results: The stress values ​​of Examples 1 and 2 were 178.72 and 165.59, respectively. While Examples 1 and 2 showed no adhesion issues, the stress value of Comparative Example 1 was 228.07, indicating poor adhesion and film detachment.

[0154] Result analysis: The overall stress value of the normal film layer is about 200, and the actual test parameters of the transition film layer in terms of adhesion are 178.72 and 165.59, and the adhesion is better than that of the normal structure.

[0155] Obviously, the specific implementation of the present invention is not limited to the above-mentioned methods. As long as various non-substantial improvements are made using the method concept and technical solution of the present invention, they are all within the scope of protection of the present invention.

Claims

1. A Mini LED COG circuit structure, characterized in that: The Mini LED COG circuit structure includes a carrier substrate, on which are sequentially arranged: a base layer, a first transition film layer, a first metal layer, a second transition film layer, an insulating layer, a first photosensitive protective layer, a third transition film layer, a second metal layer, an insulating protective layer, and a second photosensitive protective layer; The thickness of the primer layer is 0.01 to 10 μm; the material of the primer layer is selected from one or more of silicon nitride, silicon dioxide, molybdenum, titanium or nickel; The thickness of the first transition film layer is 0.01 to 10 μm; the material of the first transition film layer includes one or more of molybdenum-niobium alloy, molybdenum-copper alloy, titanium-copper alloy, and nickel-copper alloy; The thickness of the second transition film layer is 0.1-10 μm; the material of the second transition film layer includes one or more of molybdenum-niobium alloy, molybdenum-copper alloy, titanium-copper alloy, and nickel-copper alloy.

2. The Mini LED COG circuit structure according to claim 1, wherein: The thickness of the first metal layer is 0.1-100 μm; the material of the first metal layer includes one or more of silver, gold, copper, molybdenum-niobium alloy, molybdenum-copper alloy, titanium-copper alloy, and nickel-copper alloy.

3. The Mini LED COG circuit structure according to claim 1, wherein: The thickness of the third transition film layer is 0.1 to 10 μm; the material of the third transition film layer includes one or more of silver, gold, copper, molybdenum-niobium, molybdenum-copper, titanium-copper, and nickel-copper alloy.

4. The Mini LED COG circuit structure according to claim 1, wherein: The thickness of the second metal layer is 0.1-10 μm; the material of the second metal layer includes one or more of silver, gold, and copper.

5. A method for manufacturing the Mini LED COG circuit structure according to any one of claims 1 to 4, characterized in that: The production method comprises the following steps: 1) Surface treatment of the carrier substrate; 2) The single-side layer of the carrier substrate obtained in step 1) is sequentially prepared with a primer layer, a first transition film layer, a first metal layer, and a second transition film layer, and then wet-etched; 3) Prepare an insulating layer and then perform dry etching; 4) Make the first photosensitive protective layer, then expose and develop; 5) Make the third transition film layer and the second metal layer, and then wet etch; 6) Prepare an insulating protective layer and perform dry etching; 7) Prepare a second photosensitive protective layer, expose and develop it to form a complete integrated circuit structure.

6. The manufacturing method according to claim 5, characterized in that: In step 2), the first transition film layer, the first metal layer, and the second transition film layer are prepared by vacuum magnetron sputtering or electroplating. When vacuum magnetron sputtering is used, the coating power is 13 to 20 kW, the coating pressure is 300 to 500 kPa, and the coating time is 3 to 5 minutes. When electroplating is used, the electroplating time is 6 to 10 minutes and the current density is 1 to 1.5 A / dm².

7. The production method according to claim 5 or 6, characterized in that: In step 5), the process of forming the third transition film layer and the second metal layer is vacuum magnetron sputtering or electroplating; When vacuum magnetron sputtering is used, the coating power is 13-20KW, the coating pressure is 300-500 kPa, and the coating time is 3-5 minutes. When electroplating is used, the process parameters are: time is 6-10 minutes, and the current density is 1-1.5 A / dm².

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