Operating a memory array based on an indicated temperature

Abstract

This application relates to operating a memory array based on an indicated temperature. A system can include a memory device and a host device. The memory device can indicate information about a temperature of the memory device, which can include sending an indication to the host device after receiving a signal to initialize operation of the memory device or storing an indication about the temperature of the memory device, for example in a register. The information can include a temperature of the memory device or an indication that a rate of change of the temperature of the memory device has met a threshold. Operation of the memory device or the host device or both can be modified based on the information about the temperature of the memory device. Operation modification can include delaying sending or processing of memory commands until the threshold is met.

Description

[0001] Cross-references

[0002] This patent application is the national phase application of International Patent Application No. PCT / US2021 / 019259, filed February 23, 2021, entitled "Operating a Memory Array Based on an Indicated Temperature Spectrum," filed by BOEHM et al., which claims both BOEHM et al.'s U.S. Patent Application No. 17 / 180,503, filed February 19, 2021, entitled "Operating a Memory Array Based on an Indicated Temperature Spectrum," and BOEHM et al.'s U.S. Patent Application No. 17 / 180,503, filed March 23, 2020, entitled "Operating a Memory Array Based on an Indicated Temperature Spectrum." The benefits of U.S. Provisional Patent Application No. 62 / 993,483, entitled “TEMPERATURE”, are assigned to the assignee, and each application is expressly incorporated herein by reference in its entirety. Technical Field

[0003] This technical field relates to memory arrays that operate based on an indicated temperature. Background Technology

[0004] The following text generally refers to one or more memory systems, and more specifically, to memory arrays that operate based on an indicated temperature.

[0005] Memory devices are widely used to store information in various electronic devices such as computers, wireless communication devices, cameras, and digital displays. Information is stored by programming memory cells within the memory device into different states. For example, a binary memory cell can be programmed to support one of two states, typically indicated by logic 1 or logic 0. In some instances, a single memory cell can support more than two states, any of which can be stored. To access the stored information, a component can read or sense at least one stored state in the memory device. To store information, a component can write states into the memory device or program those states.

[0006] Various types of memory devices and memory cells exist, including magnetic hard disks, random access memory (RAM), read-only memory (ROM), dynamic RAM (DRAM), synchronous dynamic RAM (SDRAM), ferroelectric RAM (FeRAM), magnetic RAM (MRAM), resistive RAM (RRAM), flash memory, phase-change memory (PCM), auto-select memory, and chalcogenide memory technology. Memory cells can be volatile or non-volatile. For example, non-volatile FeRAM can maintain its stored logic state for a long time even without external power. Volatile DRAM devices, on the other hand, may lose their stored state when disconnected from external power. Summary of the Invention

[0007] A method is described. The method may include: receiving a signal that initiates operation of a memory component including a memory array; determining a temperature of the memory component based at least in part on the receipt of the signal; generating an indication that the temperature of the memory component has exceeded a threshold based at least in part on the determination; and processing a command received from a host device for accessing the memory array based at least in part on the generation of the indication.

[0008] A method is described. The method may include: identifying a command for accessing a memory array of a memory component; delaying the transmission of the command to the memory component at least in part based on the temperature of the memory component; receiving an indication that the temperature of the memory component has exceeded a threshold at least in part based on the indication; and transmitting an initial command for accessing the memory array of the memory component to the memory component at least in part based on determining that the temperature of the memory component has exceeded the threshold.

[0009] A device is described. The device may include: a memory array; a sensor configured to sense the temperature of at least a portion of the device; a component coupled to the sensor and configured to compare the output of the sensor with a threshold and indicate the result of the comparison; and a controller coupled to the component and configured to receive and process a command for accessing the memory array based at least in part on the output of the sensor being greater than the threshold.

[0010] An apparatus is described. The apparatus may include: a memory array; and a memory controller coupled to the memory array and configured to: determine, at least in part, a temperature of at least a portion of the apparatus based on receiving a signal that initiates an operation of the apparatus; generate, at least in part, an indication that the temperature of the at least a portion of the apparatus has exceeded a threshold based on the determination; and process, at least in part, a command received from a host device for accessing the memory array based on the generation of the indication.

[0011] An apparatus is described. The apparatus includes: a memory controller that can be configured to: identify a command for accessing a memory array of memory components; delay transmitting the command to the memory component at least in part based on the temperature of the memory component; receive an indication that the temperature of the memory component has exceeded a threshold at least in part based on the indication; and transmit an initial command for accessing the memory array of the memory component to the memory component at least in part based on determining that the temperature of the memory component has exceeded the threshold. Attached Figure Description

[0012] Figure 1 An example of a system supporting a temperature-indicated operating memory array is shown, based on examples disclosed herein.

[0013] Figure 2 An example is shown that supports a memory die for operating a memory array based on an indicated temperature, according to the examples disclosed herein.

[0014] Figure 3 An example is shown that supports an operating environment for a memory array based on an indicated temperature, according to examples disclosed herein.

[0015] Figure 4 An example of a process flow supporting operation of a memory array based on an indicated temperature is shown, according to examples disclosed herein.

[0016] Figure 5 A block diagram is shown that supports a memory device based on an indicated temperature-operated memory array, according to an example disclosed herein.

[0017] Figure 6 A block diagram is shown that supports a host device for operating a memory array based on an indicated temperature, according to an example disclosed herein.

[0018] Figure 7 and 8 A flowchart illustrating one or more methods for supporting the operation of a memory array based on an indicated temperature, as disclosed herein, is shown. Detailed Implementation

[0019] Memory devices and host devices (e.g., devices that use memory devices to store information) may be included in memory-related systems. In some cases, the system (or one or more subsystem components) may be deployed in extreme environments with a wide temperature range—e.g., a temperature range from -40°C to 125°C. In some cases, memory devices operating in extreme environments may not meet one or more thresholds (“operation thresholds”) for operating the memory device across the entire temperature range, such as an error rate threshold or a power consumption threshold; for example, the memory device may fail to meet the operation thresholds when the temperature is close to the lower or upper limit of the temperature range. In some instances, to determine whether a memory device will meet one or more operation thresholds when deployed in extreme environments, the manufacturer may test each memory device across the entire temperature range and discard one or more memory devices that do not meet one or more operation thresholds across the entire temperature range. Discarding such a memory device may increase the cost of memory devices manufactured for extreme environments.

[0020] To avoid waste and reduce costs, while ensuring that an increased number of memory devices meet one or more operating thresholds when operating in extreme environments, the operation of a memory device (or memory system) can be modified based on its temperature. To support temperature-based modification of the memory system's operation, one or more temperatures of the memory device can be indicated to the host device, and the operation of one or both the memory device and the host device can be modified based on these temperatures. In some instances, the memory device can be configured to delay processing of commands (or "access commands") for accessing the memory array, or to use modified parameters (or "access parameters") for accessing the memory array, until the memory device's temperature has reached a threshold (also referred to herein as a temperature threshold). The host device can be configured to delay sending access commands to the memory device until the memory device's temperature has reached the temperature threshold. Therefore, by modifying the operation of the memory system based on the memory device's temperature, the memory system (or one or more sub-components of the memory system) can ensure that the memory device meets one or more operating thresholds—even if the memory device fails to meet one or more operating thresholds across the entire temperature range.

[0021] The features of this disclosure are initially described in reference to, Figure 1 and 2 The description is made within the context of the memory system and memory die described. (See references...) Figure 3 and 4 The features of this disclosure are described in the context of the diagrams and process flows described herein. (See references...) Figures 5 to 8The device diagrams and flowcharts described in relation to the operation of the memory array based on the indicated temperature further illustrate these and other features of the present disclosure, and these and other features of the present disclosure are further described with reference to the device diagrams and flowcharts.

[0022] Figure 1 An example of a system 100 supporting a temperature-indicated operating memory array, as disclosed herein, is illustrated. System 100 may include a host device 105, a memory device 110, and multiple channels 115 coupling the host device 105 and the memory device 110. System 100 may include one or more memory devices 110, but aspects of the one or more memory devices 110 may be described in the context of a single memory device (e.g., memory device 110).

[0023] System 100 may include portions of electronic devices such as computing devices, mobile computing devices, wireless devices, graphics processing devices, vehicles, or other systems. For example, system 100 may represent aspects of computers, laptop computers, tablet computers, smartphones, cellular phones, wearable devices, internet-connected devices, vehicle controllers, etc. Memory device 110 may be a system component used to store data from one or more other components of system 100.

[0024] At least a portion of system 100 may be an instance of host device 105. Host device 105 may be an instance of a processor or other circuitry within a device that uses memory to execute processes (e.g., a computing device, mobile computing device, wireless device, graphics processing unit (GPU), computer, laptop computer, tablet computer, smartphone, cellular phone, wearable device, internet-connected device, vehicle controller, or other fixed or portable electronic device), and other instances. In some instances, host device 105 may refer to the hardware, firmware, software, or a combination thereof that implements the functionality of external memory controller 120. In some instances, external memory controller 120 may be referred to as a host device or host device 105.

[0025] Memory device 110 may be a separate device or component that provides physical memory address / space available for use or reference by system 100. In some instances, memory device 110 may be configured to work with one or more different types of host devices. Signaling between host device 105 and memory device 110 may be used to support one or more of the following: modulation schemes for modulating signals, various pin configurations for transmitting signals, various form factors for the physical packages of host device 105 and memory device 110, clock signaling and synchronization between host device 105 and memory device 110, timing conventions, or other factors. In some cases, memory device 110 may use Dynamic Random Access Memory (DRAM) technology, Ferroelectric Random Access Memory (FeRAM) technology, Phase Change Memory (PCM) technology, or some other memory technology to store data.

[0026] Memory device 110 may be used to store data of components of host device 105. In some instances, memory device 110 may act as a slave device to host device 105 (e.g., responding to and executing commands provided by host device 105 via external memory controller 120). Such commands may include one or more of the following: write commands for write operations, read commands for read operations, refresh commands for refresh operations, or other commands.

[0027] The host device 105 may include one or more of the following components: an external memory controller 120, a processor 125, a basic input / output system (BIOS) component 130, or, for example, one or more peripheral components or one or more input / output controllers. The components of the host device may be coupled to each other using bus 135.

[0028] Processor 125 may be used to provide control or other functionality for at least a portion of system 100 or at least a portion of host device 105. Processor 125 may be a general-purpose processor, digital signal processor (DSP), application-specific integrated circuit (ASIC), field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or combinations thereof. In such instances, processor 125 may be an instance of a central processing unit (CPU), GPU, general-purpose GPU (GPGPU), or system-on-a-chip (SoC), and other instances. In some instances, external memory controller 120 may be implemented by processor 125 or as part of said processor.

[0029] BIOS component 130 may be a software component containing a BIOS used as firmware, which can initialize and run various hardware components of system 100 or host device 105. BIOS component 130 may also manage data flow between processor 125 and various components of system 100 or host device 105. BIOS component 130 may contain programs or software stored in one or more of read-only memory (ROM), flash memory, or other non-volatile memory.

[0030] In some instances, system 100 or host device 105 may include various peripheral components. Peripheral components may be any input or output device or interface (e.g., bus, one or more pins) that can be integrated into or with system 100 or host device 105. Examples may include one or more of the following: disk controller, sound controller, graphics controller, Ethernet controller, modem, universal serial bus (USB) controller, serial or parallel port, or peripheral card slot, such as Peripheral Component Interconnect (PCI) or dedicated graphics port. Peripheral components may be other components understood by those skilled in the art as peripheral devices.

[0031] In some instances, system 100 or host device 105 may include an I / O controller. The I / O controller manages data communication between processor 125 and peripheral components, input devices, or output devices. The I / O controller can manage peripheral devices not integrated into or integrated with system 100 or host device 105. In some instances, the I / O controller may represent a physical connection or port to an external peripheral component.

[0032] In some instances, system 100 or host device 105 may include input components, output components, or both. Input components may represent devices or signals external to system 100 that provide information, signals, or data to system 100 or its components. In some instances, input components may include a user interface or an interface with other devices or between other devices. In some instances, input components may be peripheral devices that interface with system 100 via one or more peripheral components, or may be managed by an I / O controller. Output components may represent devices or signals external to system 100 that can be used to receive output from system 100 or any of its components. Examples of output components may include a display, an audio speaker, a printing device, another processor on a printed circuit board, etc. In some instances, outputs may be peripheral devices that interface with system 100 via one or more peripheral components, or may be managed by an I / O controller.

[0033] Memory device 110 may include a device memory controller 155 and one or more memory dies 160 (e.g., memory chips) to support a desired or specified capacity for data storage. Each memory die 160 may include a local memory controller 165 (e.g., local memory controller 165-a, local memory controller 165-b, local memory controller 165-N) and a memory array 170 (e.g., memory array 170-a, memory array 170-b, memory array 170-N). Memory array 170 may be a collection of memory cells (e.g., one or more grids, one or more banks, one or more tiles, one or more segments), wherein each memory cell can be used to store at least one bit of data. Memory device 110 comprising two or more memory dies may be referred to as a multi-die memory or multi-die package, or a multi-chip memory or multi-chip package.

[0034] The device memory controller 155 may include circuitry, logic, or components for controlling the operation of the memory device 110. The device memory controller 155 may include hardware, firmware, or instructions that enable the memory device 110 to perform various operations and are available to receive, transmit, or execute commands, data, or control information associated with components of the memory device 110. The device memory controller 155 may be used to communicate with one or more of an external memory controller 120, one or more memory dies 160, or a processor 125. In some instances, the device memory controller 155 may be used in conjunction with a local memory controller 165 of the memory die 160 to control the operation of the memory device 110 described herein.

[0035] In some instances, memory device 110 may receive data or commands, or both, from host device 105. For example, memory device 110 may receive a write command instructing memory device 110 to store data for host device 105 or a read command instructing memory device 110 to provide data stored in memory die 160 to host device 105.

[0036] A local memory controller 165 (e.g., locally on memory die 160) can be used to control the operation of memory die 160. In some instances, the local memory controller 165 can be used to communicate with device memory controller 155 (e.g., to receive or transmit data or commands, or both). In some instances, memory device 110 may not include device memory controller 155 and local memory controller 165 or external memory controller 120, which can perform the various functions described herein. Thus, the local memory controller 165 can be used to communicate with device memory controller 155, with other local memory controllers 165, or directly with external memory controller 120 or processor 125, or combinations thereof. Examples of components that may be included in the device memory controller 155 or the local memory controller 165 or both may include: a receiver for receiving signals (e.g., from an external memory controller 120), a transmitter for transmitting signals (e.g., to an external memory controller 120), a decoder for decoding or demodulating received signals, an encoder for encoding or modulating signals to be transmitted, or various other circuitry or controllers that may be used to support the operation of the described device memory controller 155 or the local memory controller 165 or both.

[0037] External memory controller 120 can be used to enable the transfer of one or more of the information, data, or commands between components of system 100 or host device 105 (e.g., processor 125) and memory device 110. External memory controller 120 can translate or interpret communications exchanged between components of host device 105 and memory device 110. In some instances, the external memory controller 120, or other components of system 100 or host device 105, or their functionality as described herein, may be implemented by processor 125. For example, external memory controller 120 may be hardware, firmware, or software, or combinations thereof, implemented by processor 125, system 100, or other components of host device 105. Although external memory controller 120 is depicted as being external to memory device 110, in some instances, external memory controller 120, or its functionality as described herein, may be implemented by one or more components of memory device 110 (e.g., device memory controller 155, local memory controller 165), or vice versa.

[0038] Components of host device 105 may exchange information with memory device 110 using one or more channels 115. Channels 115 may be used to support communication between external memory controller 120 and memory device 110. Each channel 115 may be an example of a transmission medium carrying information between host device 105 and memory device. Each channel 115 may include one or more signal paths or transmission media (e.g., conductors) between terminals associated with components of system 100. Signal paths may be examples of conductive paths that can be used to carry signals. For example, channel 115 may include a first terminal comprising one or more pins or pads at host device 105 and one or more pins or pads at memory device 110. Pins may be examples of conductive input or output points of devices of system 100, and pins may be used to serve as part of a channel.

[0039] Channel 115 (and associated signal paths and terminals) may be dedicated to transmitting one or more types of information. For example, channel 115 may include one or more command and address (CA) channels 186, one or more clock signal (CK) channels 188, one or more data (DQ) channels 190, one or more other channels 192, or combinations thereof. In some instances, signaling may be transmitted via channel 115 using single data rate (SDR) signaling or dual data rate (DDR) signaling. In SDR signaling, one modulation symbol (e.g., signal level) of the signal may be registered for each clock cycle (e.g., on the rising or falling edge of the clock signal). In DDR signaling, two modulation symbols (e.g., signal levels) of the signal may be registered for each clock cycle (e.g., on both the rising and falling edges of the clock signal).

[0040] In some instances, CA channel 186 can be used to transmit commands between host device 105 and memory device 110, including control information (e.g., address information) associated with the commands. For example, CA channel 186 may contain a read command with an address containing desired data. In some instances, CA channel 186 may contain any number of signal paths (e.g., eight or nine signal paths) for decoding one or more of the address or command data.

[0041] In some instances, data channel 190 can be used to transmit one or more of data or control information between host device 105 and memory device 110. For example, data channel 190 can transmit (e.g., bidirectionally) information to be written to or read from memory device 110.

[0042] System 100 can be deployed in environments with a wide temperature range—for example, a temperature range from -40°C to 125°C. Operation in an environment associated with a wide temperature range may affect the performance, functionality, or both of the memory device 110. For example, operation in an environment with temperatures at the lower or upper limit of a wide temperature range may increase (1) the number of errors associated with writing data to, storing data in, and reading data from the memory device 110; (2) the duration associated with accessing data stored in the memory device 110; (3) the power consumption of the memory device 110; or any combination thereof.

[0043] In some cases, the effects of temperature on the functionality of memory device 110 may cause any combination of error rate, timing, or power consumption of memory device 110 to exceed one or more operating thresholds. In some cases, one or more operating thresholds may be associated with specifications broadcast by the manufacturer of memory device 110 indicating detailed information about the operation of the memory device. For example, the manufacturer may specify that, when deployed in an environment, memory device 110 will process data at an error rate below an error rate threshold; access memory cells (e.g., read from or write to them) within a duration threshold; and use a power amount below a power threshold. In some instances, one or more operating thresholds may be associated with user-defined parameters. For example, a user may constrain (desire) memory device 110 to meet one or more operating thresholds requested by the user when deployed in an environment. In some cases, one or more operating thresholds broadcast by the manufacturer may match or exceed one or more operating thresholds requested by the user.

[0044] In some cases, system 100 may be deployed in fields or industries associated with a wide temperature range (e.g., industrial or automotive applications). For example, system 100 may operate in environments with low temperatures (e.g., <-30°C) and / or high temperatures (e.g., >115°C). In some cases, if memory device 110 experiences a relatively low operating temperature (e.g., <-30°C) at startup, memory device 110 may operate with reduced functionality and may fail to meet operating thresholds (e.g., timing, power, and / or reliability thresholds) broadcast for memory device 110—such as those broadcast in a set of manufacturer specifications drafted for memory device 110. For example, the ability of memory device 110 to capture and / or retain data may be reduced, which could cause the error rate of memory device 110 to exceed the broadcast reliability threshold. The timing for accessing memory cells in memory device 110 (e.g., reading from or writing to them) may be increased, which could cause the duration of access to memory device 110 to exceed the broadcast timing threshold. Furthermore, the power consumption of memory device 110 may increase—for example, when the memory device is a high-performance complementary metal-oxide-semiconductor (CMOS) device—which may cause the power consumption of memory device 110 to exceed the broadcast power threshold. Similarly, if the memory device experiences a relatively high operating temperature (e.g., >115°C) during startup, memory device 110 may operate with reduced functionality and may fail to meet the timing, power, and / or reliability conditions broadcast for memory device 110.

[0045] To ensure that memory device 110 will meet one or more operational thresholds, the manufacturer may test each memory device 110 within a temperature range (e.g., -40°C to 125°C) that the memory device 110 may experience when deployed in the field. During testing, the manufacturer may determine whether the operation of each memory device 110 can meet one or more operational thresholds throughout the temperature range. In some instances, the manufacturer may discard memory devices 110 that do not meet one or more operational thresholds throughout the temperature range. However, deploying memory devices that meet the broadcast conditions within a large temperature range (e.g., -40°C to 125°C) may result in a large number of memory devices being discarded, thereby increasing the cost associated with manufacturing such memory devices. Alternatively, deploying memory devices that fail to meet the broadcast conditions at the extremes of a large temperature range may result in the operation of the memory devices not meeting the broadcast specifications, which can lead to operational failures of devices using the memory devices. When memory devices are implemented in a particular field, such failures may lead to critical failures (e.g., safety failures).

[0046] To avoid waste and reduce costs, while also ensuring that an increased number of memory devices 110 meet indicated operating thresholds when operating in extreme environments, the temperature of the memory devices 110 can be indicated to the host device 105 and used to modify the operation of the system 100. By indicating the temperature of the memory devices 110 to the host device 105, the memory system can ensure that the memory devices 110 will meet one or more operating thresholds—even if the memory devices 110 fail to meet one or more operating thresholds across the entire temperature range.

[0047] In some instances, memory device 110 may be configured to ignore or delay processing of memory commands until the temperature of memory device 110 exceeds a temperature threshold. Similarly, host device 105 may be configured to delay the transmission of memory commands until an indication has been received that the temperature of memory device 110 has exceeded a temperature threshold. In some instances, different parameters (“input parameters”) associated with inputs used to operate memory device 110 (e.g., input voltage, timing, etc.) may be used when the temperature of memory device 110 is below a temperature threshold, rather than when the temperature of memory device 110 is above a temperature threshold—for example, memory device 110 may adjust voltage parameters, timing parameters, or both. Similarly, host device 105 may be configured to use different input parameters when the temperature of memory device 110 is below or above a temperature threshold. In some cases, the temperature threshold may be selected as a temperature corresponding to the temperature at which memory device 110 meets one or more operating thresholds established for memory device 110.

[0048] In some instances, to shorten the time period associated with reaching a temperature threshold, memory device 110 may be configured to perform a refresh operation when the temperature of memory device 110 is below the temperature threshold. Similarly, host device 105 may be configured to send one or more refresh commands to memory device 110 when the temperature of memory device 110 is below the temperature threshold.

[0049] To support indicating the temperature of the memory device 110 to the host device 105, the memory device 110 may include: a temperature sensor configured to measure the temperature of the memory device 110 (or the memory array included in the memory device 110); and tunable logic components configured to compare the output of the temperature sensor with a temperature threshold. In some cases, the output of the tunable logic components is provided to a pin directly accessible by the host device 105. In some cases, the memory device 110 may also include a mode register configured to store the output of the tunable logic components and be readable by the host device 105.

[0050] Figure 2An example of a memory die 200 supporting a memory array operating based on an indicated temperature, as disclosed herein, is shown. The memory die 200 may be a reference. Figure 1 Examples of memory die 160 described herein. In some instances, memory die 200 may be referred to as a memory chip, memory device, or electronic memory device. Memory die 200 may include one or more memory cells 205, each of which may be programmable to store different logical states (e.g., programmed to be one of a set of two or more possible states). For example, memory cell 205 may be used to store one bit of information at a time (e.g., logic 0 or logic 1). In some instances, memory cell 205 (e.g., a multi-level memory cell) may be used to store more than one bit of information at a time (e.g., logic 00, logic 01, logic 10, logic 11). In some instances, memory cells 205 may be arranged in an array, as described in reference [reference needed]. Figure 1 The memory array 170 is described.

[0051] Memory cell 205 may store charge representing a programmable state in a capacitor. A DRAM architecture may include a capacitor containing a dielectric material to store charge representing a programmable state. In other memory architectures, other memory devices and components are possible. For example, a nonlinear dielectric material may be used. Memory cell 205 may include logic memory components such as capacitor 230 and switching component 235. Capacitor 230 may be an example of a dielectric capacitor or a ferroelectric capacitor. Nodes of capacitor 230 may be coupled to a voltage source 240, which may be a cell board reference voltage, such as Vpl, or may be ground, such as Vss.

[0052] The memory die 200 may include one or more access lines (e.g., one or more word lines 210 and one or more digital lines 215) arranged in a pattern such as a grid pattern. The access lines may be conductive lines coupled to memory cells 205 and may be used to perform access operations on memory cells 205. In some instances, word lines 210 may be referred to as row lines. In some instances, digital lines 215 may be referred to as column lines or bit lines. References to access lines, row lines, column lines, word lines, digital lines, or bit lines may be interchanged without affecting understanding or operation. Memory cells 205 may be located at the intersection of word lines 210 and digital lines 215.

[0053] Operations such as read and write operations can be performed on memory cell 205 by activating or selecting one or more access lines, such as word line 210 or digital line 215. A single memory cell 205 at its intersection can be accessed by applying a bias voltage to word line 210 and digital line 215 (e.g., applying a voltage to word line 210 or digital line 215). The intersection of word line 210 and digital line 215 in a two-dimensional or three-dimensional configuration may be referred to as the address of memory cell 205.

[0054] Access to memory cell 205 can be controlled via row decoder 220 or column decoder 225. For example, row decoder 220 can receive a row address from local memory controller 260 and activate word line 210 based on the received row address. Column decoder 225 can receive a column address from local memory controller 260 and activate digital line 215 based on the received column address.

[0055] The selection or deselection of memory cell 205 can be achieved by activating or deactivating switch assembly 235 using word line 210. Capacitor 230 can be coupled to digital line 215 using switch assembly 235. For example, when switch assembly 235 is deactivated, capacitor 230 can be isolated from digital line 215, and when switch assembly 235 is activated, capacitor 230 can be coupled to digital line 215.

[0056] Sensing component 245 can be used to detect the state (e.g., charge) stored on capacitor 230 of memory cell 205 and determine the logic state of memory cell 205 based on the stored state. Sensing component 245 may include one or more sensing amplifiers to amplify or otherwise convert signals generated by accessing memory cell 205. Sensing component 245 can compare the signal detected from memory cell 205 with reference 250 (e.g., reference voltage). The detected logic state of memory cell 205 can be provided as an output of sensing component 245 (e.g., to input / output 255) and can indicate the detected logic state to another component of the memory device including memory die 200.

[0057] The local memory controller 260 can control access to the memory cell 205 through various components (e.g., row decoder 220, column decoder 225, sensing component 245). The local memory controller 260 can be a reference. Figure 1Examples of local memory controller 165 described herein. In some instances, one or more of row decoder 220, column decoder 225, and sensing component 245 may be co-located with local memory controller 260. Local memory controller 260 may be used to receive one or more commands or data from one or more different memory controllers (e.g., external memory controller 120 associated with host device 105, another controller associated with memory die 200), translate the commands or data (or both) into information usable by memory die 200, perform one or more operations on memory die 200, and transfer data from memory die 200 to host device 105 based on the performance of said one or more operations. Local memory controller 260 may generate row signals and column address signals to activate target word line 210 and target digital line 215. Local memory controller 260 may also generate and control various voltages or currents used during operation of memory die 200. Generally, the amplitude, shape, or duration of the applied voltage or current discussed herein may vary and may differ for the various operations discussed when operating the memory die 200.

[0058] The local memory controller 260 can be used to perform one or more access operations on one or more memory cells 205 of the memory die 200. Examples of access operations may include write operations, read operations, refresh operations, precharge operations, or activation operations, etc. In some instances, access operations may be performed or otherwise coordinated by the local memory controller 260 in response to various access commands (e.g., from the host device 105). The local memory controller 260 can be used to perform other access operations not listed herein or other operations related to the operation of the memory die 200 that are not directly related to accessing the memory cells 205.

[0059] The local memory controller 260 can be used to perform write operations (e.g., programming operations) on one or more memory cells 205 of the memory die 200. During a write operation, the memory cells 205 of the memory die 200 can be programmed to store a desired logical state. The local memory controller 260 can identify the target memory cell 205 on which the write operation will be performed.

[0060] The local memory controller 260 can be used to perform read operations (e.g., sensing operations) on one or more memory cells 205 of the memory die 200. During a read operation, the logical state stored in the memory cells 205 of the memory die 200 can be determined. The local memory controller 260 can identify the target memory cell 205 on which the read operation will be performed.

[0061] In some cases, memory die 200 may be deployed in extreme environments with a wide temperature range—for example, a temperature range from -40°C to 125°C. In some cases, memory die 200 operating in extreme environments may not meet one or more operational thresholds, such as error rate thresholds or power consumption thresholds, across the entire temperature range. In some instances, to determine whether memory die 200 will meet one or more operational thresholds when deployed in extreme environments, manufacturers may test memory die 200 across the entire temperature range and discard memory die 200 if it fails to meet one or more operational thresholds across the entire temperature range. Discarding such memory dies increases the cost of memory dies used in such applications.

[0062] To avoid waste and reduce costs, while ensuring that an increased number of memory dies 200 meet one or more operating thresholds when operating in extreme environments, the memory system can modify its operation based on the temperature of the memory dies 200. To support the modified operation of the memory system, the temperature of the memory dies 200 can be indicated to the host device, and the operation of one or both of the memory dies 200 and the host device can be modified based on the temperature of the memory dies 200. In some instances, the memory die 200 can be configured to delay the processing of commands (or "access commands") for accessing the memory array at the memory die 200, or to use modified parameters (or "access parameters") for accessing the memory array, until the temperature of the memory die 200 has reached a temperature threshold. Similarly, the host device can be configured to delay sending access commands to the memory die 200 until the temperature of the memory die 200 has reached a temperature threshold. Therefore, by modifying the operation of the memory system based on the temperature of the memory die 200, the memory system can ensure that the memory die 200 will meet one or more operating thresholds—even if the memory die 200 fails to meet one or more operating thresholds across the entire temperature range.

[0063] Figure 3 An example of an operating environment 301 supporting an operating memory array based on an indicated temperature is shown, according to the examples disclosed herein. It should be understood that operating environment 301 is merely an illustrative example, and many embodiments (including other specific systems, circuits, and topologies) are possible while complying with the principles and techniques disclosed herein, as those skilled in the art will understand.

[0064] Operating environment 301 may include system 300 and external components 315. In some cases, operating environment 301 may represent an electronic system contained in a vehicle (e.g., a land, air, or sea vehicle). In some cases, operating environment 301 may be deployed in extreme environments with a wide range of temperatures.

[0065] System 300 can be as referenced. Figure 1 An example of the described system 100. In some cases, aspects of system 300 are installed in a specific electronic system of the vehicle (e.g., within an autonomous driving component or vehicle display unit). System 300 may include a host device 305 and a memory device 310.

[0066] The host device 305 may be as referenced Figure 1 An example of the described host device 105. Host device 305 may be configured to initiate data storage at a memory device—for example, for a user application executing at host device 305 or another device coupled to host device 305. Host device 305 may also be configured to access data stored at a memory device—for example, for a user application. In some cases, host device 305 may send a command (or “access command”) to memory device 310 for accessing data stored at memory device 310 (e.g., stored in memory array 350). In some instances, host device 305 may store data in memory array 350 by sending a write command to memory device 310 and access data stored in memory array 350 by sending a read command to memory device 310.

[0067] The memory device 310 may be as referenced. Figure 1 and 2 Examples of the described memory device 110 and memory die 200. The memory device 310 can be configured to store data for a device and provide data to a device upon request—for example, after receiving a request for data from a device such as host device 305. In some cases, the memory device 310 may include a temperature sensor 325, a tunable logic component 330, a mode register 335, a reference component 340, one or more memory components 345, and a memory array 350.

[0068] Temperature sensor 325 may be configured to measure the temperature of memory device 310 (or memory array 350). Temperature sensor 325 may be further configured to provide a signal (e.g., a real-time signal) to tunable logic component 330, the signal indicating one or more temperatures of memory device 310 (or memory array 350). In some instances, temperature sensor 325 may be commensurate with memory array 350 (e.g., located within, adjacent to, or above memory array 350). In some cases, temperature sensor 325 may be a CMOS temperature sensor and may operate over a wide temperature range (e.g., -50°C to 135°C). In some cases, temperature sensor 325 may output a voltage signal that represents the temperature of memory device 310 (or memory array 350) — for example, the voltage range of temperature sensor 325 (e.g., 0V to 1.5V) may be mapped (e.g., using a one-to-one mapping) to the measurable temperature range of temperature sensor 325 (e.g., -50°C to 135°C).

[0069] The tunable logic component 330 may be configured to compare the temperature indicated by the temperature sensor 325 with a threshold temperature. In some cases, the tunable logic component 330 may be further configured to provide an indication to the host device 305 when the temperature of the memory device 310 is below or above one or more temperature thresholds. In some cases, the tunable logic component may compare the temperature of the memory device 310 (or memory array 350) by comparing the voltage of a signal received from the temperature sensor 325 with a voltage representing a threshold voltage. In some cases, the tunable logic component 330 receives a voltage representing a threshold voltage from a reference component 340.

[0070] Tunable logic component 330 may output a signal representing the temperature of memory device 310 (or memory array 350). In some instances, tunable logic component 330 outputs a real-time signal indicating when the temperature of the memory device is below or above one or more temperature thresholds. In some instances, tunable logic component 330 transmits an indication that the temperature of memory device 310 has exceeded one or more thresholds—for example, tunable logic component 330 may transmit an indication to mode register 335 when the temperature of memory device 310 exceeds a first threshold.

[0071] The tunable logic component 330 can be a single-level or multi-level jump-point comparator and can receive one or more voltages representing one or more temperature thresholds from the reference component 340. In some cases, the tunable logic component 330 uses signals to represent different voltage outputs to indicate which of the multiple temperature thresholds the temperature of the memory device 310 has exceeded—for example, a first voltage level can indicate a temperature below all temperature thresholds, a second voltage level can indicate a temperature above the first threshold, a third voltage level can indicate a temperature above the second threshold, and so on. Similarly, the tunable logic component 330 can be configured to send different combinations of data to the mode register 335—for example, a binary state "00" can indicate a temperature below all temperature thresholds, a binary state "01" can indicate a temperature above the first threshold, and so on.

[0072] The tunable logic component 330 may also be configured to identify the rate of change of temperature of the memory device 310 (or memory array 350) based on one or more signals received from the temperature sensor 325. For example, the tunable logic component 330 may be configured to receive two or more indications of the temperature of the memory device 310 and determine one or more rates of change of the memory device by determining one or more differences in temperature change relative to one or more durations.

[0073] Mode register 335 may be configured to store information related to the temperature of memory device 310. In some cases, mode register 335 may be configured to store an indication that the temperature of memory device 310 is higher than one or more thresholds after receiving an indication from tunable logic component 330 that the temperature of the memory device has exceeded a temperature threshold. In some instances, mode register 335 may be a latch. In some cases, mode register 335 may be polled by host device 305 (e.g., periodically). In some instances, mode register 335 may be temperature-hardened and may be configured to operate over a wider temperature range (e.g., from -50°C to 135°C) than memory device 310.

[0074] Reference component 340 may be configured to indicate one or more temperature thresholds to tunable logic component 330. In some cases, reference component 340 may be configured to output one or more voltages representing one or more temperature thresholds. In some instances, the voltage used by reference component 340 to output a specific temperature is equal to the voltage used by temperature sensor 325 to output a specific temperature—for example, to allow direct comparison of the voltages output by reference component 340 and temperature sensor 325. In some instances, one or more temperature thresholds may be programmed at reference component 340 according to predetermined values ​​(e.g., set by manufacturer specifications or standards). Predetermined values ​​may be obtained through verification (e.g., silicone verification) or testing. In such instances, one or more temperature thresholds may be based on individual or group tests (e.g., related to design ID or process batch). In some cases, one or more temperatures may be stored in a fuse memory located at memory device 310. In some instances, one or more temperature thresholds may be fixed or variable.

[0075] In some instances, reference component 340 may (e.g., during startup) receive one or more temperature thresholds (or adjustments to one or more temperature thresholds) from host device 305 or any other component associated with system 300. In some instances, reference component 340 may be included within tunable logic component 330.

[0076] Memory component 345 may be configured to perform functions that support the operation of memory device 310. In some cases, memory component 345 may include a power supply, logic circuitry, and / or a memory controller. In some instances, memory component 345 is thermally coupled to other components in memory device 310, such as memory array 350.

[0077] The memory array 350 can be configured to store data. In some cases, the memory array 350 may contain memory cells—such as DRAM cells, FeRAM cells, PCM cells, etc. In some instances, the memory cells contained in the memory array 350 can be accessed according to read or write operations performed by the memory controller of the memory device 310.

[0078] External component 315 may be a heater, battery, GPU, system-on-a-chip (SoC), or any other external component that may be in close proximity to system 300. In some cases, external component may be thermally coupled to system 300.

[0079] As discussed in this paper, discarding memory devices that fail to meet the indicated operating thresholds across the entire temperature range may increase the cost of memory devices deployed in extreme environments. Alternatively, deploying memory devices that fail to meet the indicated operating thresholds across the entire temperature range may lead to critical failures during operation.

[0080] To avoid waste and reduce costs, while ensuring the reliability of memory devices deployed in environments with wide temperature ranges, and for other advantages, memory devices can be configured to delay memory operation until the memory device temperature has reached a level within which the memory device can operate under a broadcasted operating threshold. In some instances, memory devices can be configured to operate in a restricted operating mode until the memory device temperature has reached a level within which the memory device can operate under a broadcasted operating threshold.

[0081] In some instances, after receiving a signal to initialize system 300 (e.g., a power signal), temperature sensor 325 may provide a real-time temperature reading to tunable logic component 330. Tunable logic component 330 may compare the temperature reading with a temperature threshold (e.g., provided by reference component 340). In some instances, when the temperature read from temperature sensor 325 is below the threshold, memory device 310 may ignore (or buffer) any access commands received from host device 305 until the temperature of memory device 310 (or memory array 350) reaches the temperature threshold.

[0082] In some cases, based on a received power signal, memory array 350 may perform one or more refresh operations until the temperature of memory device 310 reaches a temperature threshold. Performing a refresh operation may involve performing a series of operations to sense the logic state from memory array 350 and write the logic state back to memory array 350. In some cases, the refresh operation is referred to as a “virtual” refresh operation and is performed while memory array 350 stores uncertain data—that is, the data stored in memory array 350 may be unknown when memory device 310 is initialized. In some instances, memory array 350 performs a refresh operation based on receiving one or more commands to perform a received refresh operation (“refresh command”). In other instances, memory array 350 performs a refresh operation on itself in response to a received power signal. By performing refresh operations during initialization and when the temperature of memory device 310 is below a threshold, the internal temperature of memory device 310 can rise while memory array 350 stores uncertain data; therefore, errors are not introduced into the data stored in memory array 350.

[0083] In some cases, once the temperature read from temperature sensor 325 reaches a temperature threshold, tunable logic component 330 can indicate that the temperature of memory device 310 has reached the temperature threshold. In some cases, tunable logic component 330 can indicate the temperature by changing the voltage of the signal provided to host device 305—for example, the tunable logic component can switch the signal from low voltage to high voltage, or vice versa. Alternatively, tunable logic component 330 can transmit an indication that the temperature of memory device 310 has exceeded the threshold to mode register 335. In some cases, tunable logic component 330 can send a multi-level signal to host device 305, and / or send a multi-bit signal to mode register 335. Mode register 335 can store the indication that the temperature of memory device 310 has exceeded the threshold.

[0084] After the tunable logic component 330 indicates that the temperature of the memory device 310 has exceeded a temperature threshold, the host device 305 may determine that the temperature of the memory device 310 has exceeded the temperature threshold. In some instances, the host device 305 may determine that the temperature of the memory device 310 has exceeded the temperature threshold based on detecting a change in the signal provided from the tunable logic component 330. In other instances, the host device 305 may determine that the temperature of the memory device 310 has exceeded the temperature threshold by polling the mode register 335—by reading the data stored in the mode register 335 one or more times.

[0085] In some instances, memory component 345 may be initialized based on a power signal received by system 300. In some cases, the temperature of memory device 310 may rise at least partially based on the operation of memory component 345. Furthermore, in some instances, external component 315 may be initialized simultaneously with system 300, and the temperature of memory device 310 may rise at least partially based on the operation of external component 315—for example, due to thermal coupling between external component 315 and system 300.

[0086] Figure 4 An example of process flow 401 supporting operation of a memory array based on an indicated temperature, as disclosed herein, is shown. Process flow 401 may illustrate a process for instructing a host device 405 within a system 400 to the temperature of a memory device 410. System 400 may be as described in the reference... Figure 1 and 3 Examples of systems 100 and 300 described herein. Host device 405 may be as described in the reference. Figure 1 and 3 Examples of host devices 105 and 305 are described. Memory device 410 may be as shown in the reference. Figures 1 to 3 Examples of the described memory device 110, memory die 200, and memory device 310.

[0087] In some cases, prior to performing the operations described at block 415, a test procedure may be performed to determine whether the memory device 410 is able to meet one or more operating thresholds across the entire temperature range (e.g., -40°C to 125°C). In some instances, the test procedure may determine that the memory device 410 is able to meet one or more operating thresholds within a narrower portion of the temperature range (e.g., -30°C to 115°C or -30°C to 125°C)—for example, when a first set of input parameters is applied to the memory device 410. In some instances, the test procedure may identify one or more temperature thresholds corresponding to a portion of the temperature range—for example, a temperature threshold may be equal to -30°C and / or another temperature threshold may be equal to 115°C.

[0088] In some instances, when using a second set of input parameters, the testing process can determine that the memory device 410 can meet one or more operating thresholds over a significant portion of a temperature range (e.g., -37°C to 122°C or the entire temperature range). In some cases, the second set of input parameters may be associated with a larger input voltage, an extended timing duration, and / or increased power consumption relative to the first set of input parameters. In some instances, the testing process may identify one or more additional temperature thresholds corresponding to a significant portion of the temperature range—for example, a temperature threshold may be equal to -37°C and / or another temperature threshold may be equal to 122°C.

[0089] In some cases, one or more temperature thresholds determined during testing can be programmed into memory device 410—for example, temperature thresholds can be stored in a reference component (e.g., Figure 3 Reference component 340), tunable logic component (e.g., Figure 3 The tunable logic component 330 contains a non-volatile latch and / or is stored in a fuse contained in the memory device 410.

[0090] At block 415, host device 405 and memory device 410 may receive an initialization signal. In some cases, the initialization signal may be a power signal that causes host device 405 and memory device 410 to transition from a powered-off state to a powered-on state. In some cases, when memory device 410 is in the powered-off state, data previously stored in one or more memory cells may be lost or degraded (e.g., in the case of volatile memory cells). Therefore, the logical state of the memory cells may become indeterminate during the powered-off state, and memory device 410 may not be able to accurately determine the data previously stored in the memory cells after returning to the powered-on state. Therefore, when memory device 410 transitions to the powered-on state, the data previously stored in memory device 410 may not be used.

[0091] At block 420, host device 405 can identify, based on the receipt of an initialization signal, a memory array included in memory device 410 (e.g., ...). Figure 3 One or more commands of the memory array 350. In some cases, one or more commands may be referred to as access commands, and one or more commands may be read or write commands.

[0092] At block 425, host device 405 may delay transmitting one or more access commands to memory device 410 based on the temperature of memory device 410 (or memory array 350). In some cases, host device 405 may avoid transmitting one or more access commands until it receives an indication from memory device 410 that the temperature of memory device 410 has met a temperature threshold. In some instances, host device 405 receives an indication from a signal received from tunable logic component 330—for example, based on monitoring a pin coupled to host device 405. In some instances, host device 405 receives an indication based on sending a signal to read a mode register contained in memory device 410 (e.g., ...). Figure 3 The instruction is received in response to a request from the mode register 335.

[0093] In other instances, host device 405 may transmit one or more access commands to memory device 410 even if the temperature of memory device 410 has not yet met a temperature threshold. In some cases, memory device 410 may ignore or buffer one or more transmitted access commands until the temperature of memory device 410 (or memory array 350) reaches the temperature threshold.

[0094] At frame 430, the temperature sensor at memory device 410 (e.g., Figure 3 The temperature sensor 325 can measure the temperature of the memory device 410 (or memory array 350) based on the receipt of an initialization signal. In some cases, the temperature sensor 325 can output a voltage corresponding to the measured temperature. In other cases, the temperature sensor 325 can output a data packet including a binary value corresponding to the measured temperature.

[0095] At block 435, tunable logic component 330 at memory device 410 can determine that the temperature of memory device 410 (or memory array 350) does not meet a temperature threshold—for example, based on a comparison of the internal temperature of memory device 410 measured by temperature sensor 325 with the threshold. In some cases, tunable logic component 330 determines that the temperature of memory device 410 is below a lower temperature threshold. In other cases, tunable logic component 330 determines that the temperature of memory device 410 is above a higher temperature threshold. The temperature threshold may be determined according to manufacturer standards or specifications or in any additional manner as described herein. In some cases, memory device 410 may avoid accessing memory array 350 when the temperature of memory device 410 is below the temperature threshold. In other cases, memory device 410 may access memory array 350 using a first set of access parameters based on the determination that the temperature of memory device 410 does not meet the temperature threshold.

[0096] At arrow 440, memory device 410 may provide an indication that its internal temperature has not yet reached a temperature threshold. In some cases, host device 405 may receive the indication based on monitoring the output of tunable logic component 330. In other cases, host device 405 may receive the indication by sending a request to read mode register 335 at memory device 410. Upon receiving the request, memory device 410 may transfer data stored in mode register 335 to host device 405. In some cases, when the temperature of memory device 410 has not reached a temperature threshold, memory device 410 may avoid processing (e.g., ignore or buffer) commands received from host device 405.

[0097] At block 445, host device 405 may determine, based on an indication received that the temperature of memory device 410 has not reached a temperature threshold, to use a first set of parameters to access memory device 410. In some instances, host device 405 may determine to use increased voltage and timing parameters associated with an extended duration.

[0098] At arrow 450, host device 405 may transmit one or more refresh commands for memory array 350 to memory device 410 based on determining that the temperature of the memory device is below a temperature threshold. In some instances, host device 405 may transmit refresh commands before transmitting any access commands for memory array 350 and while memory array 350 stores uncertain data—for example, to avoid corrupting the data in memory array 350. In some cases, instead of sending refresh commands, host device 405 may transmit virtual access commands—for example, write or read commands carrying random data in cases where the corresponding data output by memory device 410 is ignored by host device 405.

[0099] At block 455, memory device 410 may perform one or more refresh operations (or virtual access operations). Performing a refresh operation may involve performing a series of operations to sense a logical state and write the logical state back to one or more memory cells, which may increase the internal temperature read from temperature sensor 325 of memory device 410. In some cases, memory device 410 performs one or more refresh operations based on receiving one or more refresh commands from host device 405. In some cases, memory device 410 may perform a refresh operation based on receiving a single refresh command from host device 405 until the temperature of the memory device meets a temperature threshold. In some cases, memory device 410 may perform a refresh operation after determining that the temperature of memory device 410 has not reached a temperature threshold and without receiving a refresh command from host device 405. By performing one or more refresh operations at memory array 350 before storing data for host device 405 at memory array 350, the temperature of memory device 410 (or memory array 350) can be increased without causing data errors.

[0100] At block 460, the tunable logic component 330 at memory device 410 can determine that the temperature of memory device 410 (or memory array 350) meets a temperature threshold—for example, based on a comparison of the internal temperature of memory device 410 measured by temperature sensor 325 with the threshold. The temperature threshold can be determined according to manufacturer standards or specifications or in any additional manner as described herein. In some cases, the temperature of memory device 410 may exceed the temperature threshold based on receiving an initialization signal and / or performing a refresh operation. That is, after receiving an initialization signal, one or more memory components at memory device 410 may be activated and generate heat as a result of activation. Similarly, one or more components thermally coupled to host device 405 and memory device 410 (e.g., external components such as batteries, heaters, etc.) may be activated and generate heat. In some cases, the output of tunable logic component 330 may be deactivated after the temperature threshold is met.

[0101] In some cases, memory device 410 may access memory array 350 using a second set of access parameters, different from the first set of access parameters used at block 435, based on determining that the temperature of memory device 410 is above a temperature threshold. In some cases, the first set of access parameters may be equal to the broadcast set of access parameters used for memory device 410. In some cases, memory device 410 may begin processing commands received from host device 405 (e.g., currently or previously stored in a buffer) after determining that the temperature of memory device 410 has met a threshold.

[0102] In some cases, multiple thresholds may be configured at memory device 410. In some instances, a first temperature threshold may be associated with a first temperature, a second temperature threshold may be associated with a second temperature, and so on. In some cases, the first temperature threshold may be based on a first temperature level of memory device 410, wherein when a first set of input (or access) parameters is used for memory device 410, the operation of memory device 410 conforms to a first set of specifications associated with the memory array. The second temperature threshold may be based on a second temperature level of memory device 410, wherein when a second set of input (or access) parameters is used for memory device 410, the operation of memory device 410 conforms to a first set (or a different set) of specifications associated with the memory array. In some cases, the second set of input parameters may correspond to input and / or access parameters broadcast for memory device 410.

[0103] At arrow 465, memory device 410 can provide an indication that its internal temperature has met a threshold temperature. In some cases, host device 405 may receive the indication based on monitoring the output of tunable logic component 330—for example, based on detecting a transition from low to high voltage in a signal received from a pin of memory device 410—or vice versa. In other cases, memory device 410 may receive the indication by sending a request to read mode register 335. Upon receiving the request, memory device 410 may transfer data stored in mode register 335 to host device 405.

[0104] At block 470, host device 405 may determine, based on receiving an indication that the temperature of memory device 410 has met a temperature threshold, that a second set of input parameters will be used to access memory device 410. In some instances, host device 405 may determine that a second set of timing parameters will be used, associated with a duration shortened relative to the first set of timing parameters described at block 445.

[0105] At arrow 475, host device 405 may transmit one or more access commands to memory device 410 based on determining that the temperature of memory device 410 has met a threshold. In some cases, the one or more access commands include one or more access commands delayed at block 425. At block 480, memory device 410 may process one or more access commands received from host device 405.

[0106] In some cases, the tunable logic component 330 at memory device 410 can determine that the temperature of memory device 410 has exceeded an additional temperature threshold. In some cases, memory device 410 can use a different set of access parameters to access memory array 350 based on the determination that the additional temperature threshold has been exceeded. In other cases, memory device 410 can use a restricted set of access parameters or avoid accessing memory array 350 based on exceeding the additional temperature threshold—for example, where the additional temperature threshold is associated with a higher temperature (e.g., >115°C).

[0107] In some cases, the tunable logic component 330 at memory device 410 can determine that the rate of temperature change of memory device 410 (or memory array 350) has met one or more thresholds. In some cases, memory device 410 may avoid accessing memory array 350 using a different set of access parameters or based on the rate of temperature change exceeding the threshold, as similarly described in reference boxes 430 to arrows 465.

[0108] Figure 5 A block diagram 500 is shown of a memory device 505 supporting an indicated temperature-based operating memory array according to an example disclosed herein. The memory device 505 may be as described in the reference... Figures 1 to 4 Examples of various aspects of the described memory device. Memory device 505 may include a memory device temperature sensing component 510, a memory device tunable logic component 515, a memory device operation component 520, a memory device initialization component 525, a memory device temperature storage component 530, and a memory device refresh component 535. Each of these modules may communicate with each other directly or indirectly (e.g., via one or more buses).

[0109] The memory device temperature sensing component 510 can determine the temperature of the memory device based on the received signal.

[0110] In some instances, the memory device temperature sensing component 510 may generate a second indication that the temperature of the memory device is below a threshold based on the determination, prior to generating an indication to the host device.

[0111] In some instances, the memory device temperature sensing component 510 may generate a second indication that the temperature of the memory device has exceeded a second threshold based on the determination.

[0112] In some instances, the memory device temperature sensing component 510 may generate a second indication based on the determination that the rate of change associated with the temperature of the memory component has exceeded a second threshold.

[0113] In some instances, the memory device temperature sensing component 510 may send the indication to a host device or a register, or both, based on the generation of the indication. In some cases, the temperature of the memory components is measured at the memory array.

[0114] The tunable logic component 515 of the memory device can generate an indication that the temperature of the memory component has exceeded a threshold based on the determination.

[0115] In some instances, the memory device tunable logic component 515 can compare the temperature of the memory component with a threshold.

[0116] In some instances, the memory device tunable logic component 515 may determine, based on the comparison, that the temperature of the memory component has exceeded a threshold, wherein an indication is generated based on the determination.

[0117] In some instances, the memory device tunable logic component 515 can compare the temperature of the memory component with a second threshold.

[0118] In some instances, the memory device tunable logic component 515 may determine, based on the comparison, that the temperature of the memory component has exceeded a second threshold, wherein a second indication is generated based on the determination.

[0119] In some instances, the memory device tunable logic component 515 may receive a second indication of a threshold from the host device, wherein the threshold is based on a second temperature level, and wherein the operation of the memory component conforms to a set of specifications associated with the memory array when using a set of parameters for operating the memory component and the temperature of the memory component reaches the second temperature.

[0120] In some cases, the threshold is based on a second temperature level, wherein the operation of the memory component conforms to a set of specifications associated with the memory array when using a set of parameters for operating the memory component and the temperature of the memory component reaches the second temperature.

[0121] The memory device operation component 520 can process commands received from the host device for accessing the memory array based on the generated instructions.

[0122] In some instances, the memory device operation component 520 may avoid processing a second command for accessing the memory array based on the generation of the second instruction.

[0123] In some instances, the memory device operation component 520 may receive a command for accessing the memory array from the host device based on the generation of the instruction, wherein the command is an initial command received from the host device.

[0124] In some instances, the memory device operation component 520 may receive a second command from the host device before receiving a command and generating an indication that the temperature of the memory component has exceeded a threshold.

[0125] In some instances, the memory device operation component 520 may avoid processing a second command at least based on the memory component's temperature being below a threshold.

[0126] In some instances, the memory device operation component 520 may receive a command from the host device before generating an indication that the temperature of the memory component has exceeded a threshold.

[0127] In some instances, the memory device operation component 520 may delay processing of commands until an indication is generated that the temperature of the memory component has exceeded a threshold.

[0128] In some instances, the memory device operation component 520 may use a first set of parameters for operating the memory array based on determining that the temperature of the memory component has exceeded a threshold.

[0129] In some instances, the memory device operation component 520 may receive a request from the host device to read the stored value.

[0130] The memory device initialization component 525 can receive signals that initialize the operation of a memory component containing a memory array.

[0131] In some cases, after receiving a signal to initialize the operation of the memory component based on the operation of the memory component, the temperature of the memory component increases from a first temperature, and the indication is generated based on the increase in the temperature of the memory component.

[0132] In some cases, one or more components thermally coupled to the memory component operate based on a first signal, and the temperature of the memory component rises from a first temperature after receiving the signal based on the operation of one or more components, and the indication is generated based on the temperature rise of the memory component.

[0133] The memory device temperature storage component 530 can store a value corresponding to an indication that the temperature of the memory component has exceeded a threshold, based on the generation mentioned above.

[0134] In some instances, the temperature storage component 530 of the memory device can send the stored value to the host device upon receiving a request.

[0135] The memory device refresh component 535 can perform a series of operations for sensing the logical state from the memory array and writing the logical state back to the memory array while storing uncertain data in the memory array, before generating an indication that the temperature of the memory component has exceeded a threshold.

[0136] In some instances, the memory device refresh component 535 may receive a second command from the host device before generating an indication that the temperature of the memory component has exceeded a threshold, to perform operations for sensing the logical state from the memory array and writing the logical state back to the memory array while storing indeterminate data in the memory array.

[0137] Figure 6 A block diagram 600 is shown of a host device 605 supporting an indicated temperature-operated memory array according to an example disclosed herein. The host device 605 may be as described in the reference... Figures 1 to 4 Examples of various aspects of the described host device. Host device 605 may include host device command component 610, host device operation component 615, host device temperature component 620, and host device refresh component 625. Each of these modules may communicate with each other directly or indirectly (e.g., via one or more buses).

[0138] The host device command component 610 can identify commands used to access the memory array of the memory component.

[0139] The host device operation component 615 can delay the transmission of commands to the memory component based on the temperature of the memory component.

[0140] In some instances, the host device operation component 615 may send an initial command to the memory component for accessing the memory array based on determining that the temperature of the memory component has exceeded a threshold.

[0141] In some instances, the host device operation component 615 may configure a set of parameters for operating the memory array based on determining that the temperature of the memory component has exceeded a second threshold.

[0142] In some instances, the host device operation component 615 can transfer a set of parameters to the memory array of the memory component.

[0143] In some cases, the transmission of commands to the memory component is delayed based on a second indication received that the temperature of the memory component is below a threshold.

[0144] The host device temperature component 620 can receive an indication that the temperature of the memory component has exceeded a threshold based on the indication.

[0145] In some instances, the host device temperature component 620 may determine that the temperature of the memory component has exceeded a threshold based on receiving the indication, wherein an initial command is sent based on the determination.

[0146] In some instances, the host device temperature component 620 may receive a second indication that the temperature of the memory component has exceeded a second threshold.

[0147] In some instances, the host device temperature component 620 may determine, based on a second indication, that the temperature of the memory component has exceeded a second threshold.

[0148] In some instances, the host device temperature component 620 may receive a second indication that the temperature of the memory component is below a threshold before receiving an indication that the temperature of the memory component has exceeded a threshold.

[0149] In some instances, the host device temperature component 620 may send a second indication of a threshold to the memory component, wherein the threshold is based on a second temperature level, wherein the operation of the memory component conforms to a set of specifications associated with the memory array when using a set of parameters for operating the memory component and the temperature of the memory component reaches the second temperature.

[0150] In some instances, the host device temperature component 620 may read a register containing a value indicating the temperature of the memory component, wherein an initial command is sent based on a value indicating that the temperature of the memory component has exceeded a threshold.

[0151] The host device refresh component 625 can transmit a second command before receiving an indication that the temperature of the memory component has exceeded a threshold. The second command instructs the memory component to perform a series of operations for sensing the logical state from the memory array and writing the logical state back to the memory array while storing indeterminate data in the memory array.

[0152] Figure 7 A flowchart illustrating one or more methods 700 supporting operation of a memory array based on an indicated temperature, according to examples disclosed herein. Operation of method 700 can be implemented by a memory device or its components as described herein. For example, operation of method 700 can be performed by, as referenced herein... Figure 5 The described memory device performs the function. In some instances, the memory device can execute a set of instructions to control the functional elements of the memory device, thereby performing the described function. Alternatively, the memory device can use dedicated hardware to perform aspects of the described function.

[0153] At 705, the memory device may receive a signal to initialize an operation comprising a memory component containing a memory array. The operation at 705 may be performed according to the method described herein. In some instances, it may be performed by, as referenced... Figure 5 The described memory device initialization component performs various aspects of operation 705.

[0154] At 710, the memory device can determine the temperature of the memory component based on the received signal. Operation at 710 can be performed according to the method described herein. In some instances, it can be achieved by, as referenced... Figure 5The described memory device temperature sensing component performs various aspects of the operation of 710.

[0155] At point 715, the memory device can generate an indication that the temperature of the memory component has exceeded a threshold based on a determination. Operation at point 715 can be performed according to the method described herein. In some instances, it can be achieved by, as referenced... Figure 5 The described memory device allows tunable logic components to perform various aspects of the operation of 715.

[0156] At 720, the memory device can process commands received from the host device for accessing the memory array based on generation instructions. The operation of 720 can be performed according to the methods described herein. In some instances, it can be performed by, as referenced... Figure 5 The described memory device operating components perform various aspects of the operation of 720.

[0157] In some instances, the device described herein can perform one or more methods, such as method 700. The device may include features, components, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor) for: receiving a signal initiating operations of a memory component comprising a memory array; determining the temperature of the memory component based on the received signal; generating an indication that the temperature of the memory component has exceeded a threshold based on the determination; and processing a command received from a host device for accessing the memory array based on the generated indication.

[0158] Some instances of the method 700 and apparatus described herein may further include operations, features, components, or instructions for generating a second indication, based on determination, that the temperature of the memory component may be below a threshold, prior to generating an indication to the host device.

[0159] Some instances of the method 700 and apparatus described herein may further include operations, features, components, or instructions for: generating a second indication, based on determination, that the temperature of a memory component may have exceeded a second threshold; and avoiding processing a second command for accessing the memory array based on generating the second indication.

[0160] Some instances of the method 700 and apparatus described herein may further include operations, features, components, or instructions for generating a second indication, based on determination, that the rate of change associated with the temperature of the memory component may have exceeded a second threshold.

[0161] Some instances of the method 700 and device described herein may further include operations, features, components, or instructions for sending instructions to a host device or register, or both, based on a generated instruction.

[0162] Some instances of the method 700 and apparatus described herein may further include operations, features, components, or instructions for receiving commands from a host device for accessing a memory array based on generation instructions, wherein the commands may be initial commands received from the host device.

[0163] Some instances of the method 700 and apparatus described herein may further include operations, features, components, or instructions for: receiving a second command from a host device before a command may be received and an indication may be generated that the temperature of the memory component may have exceeded a threshold; and avoiding processing the second command at least based on the fact that the temperature of the memory component is below the threshold.

[0164] Some instances of the method 700 and apparatus described herein may further include operations, features, components, or instructions for: receiving a command from the host device prior to an indication that the temperature of the memory component may have exceeded a threshold; and delaying the processing of the command until an indication that the temperature of the memory component may have exceeded the threshold.

[0165] Some instances of the method 700 and apparatus described herein may further include operations, features, components, or instructions for performing a series of operations for sensing the logical state from the memory array and writing the logical state back to the memory array while the memory array may store uncertain data, prior to an indication that the temperature of the memory components may have exceeded a threshold.

[0166] Some instances of the method 700 and apparatus described herein may further include operations, features, components, or instructions for receiving a second command from a host device to perform operations for sensing the logical state from the memory array and writing the logical state back to the memory array while the memory array may store uncertain data, prior to an indication that the temperature of the memory component may have exceeded a threshold.

[0167] Some instances of the method 700 and apparatus described herein may further include operations, features, components, or instructions for: comparing the temperature of a memory component with a threshold; determining, based on the comparison, that the temperature of the memory component may have exceeded the threshold, wherein an indication may be generated based on the determination; and using a first set of parameters for operating the memory array based on the determination that the temperature of the memory component may have exceeded the threshold.

[0168] Some instances of the method 700 and apparatus described herein may further include operations, features, components, or instructions for: comparing the temperature of a memory component with a second threshold; and determining, based on the comparison, that the temperature of the memory component may have exceeded the second threshold, wherein a second indication may be generated based on the determination.

[0169] In some instances of the method 700 and device described herein, the threshold may be based on a second temperature level, wherein the operation of the memory component conforms to a set of specifications associated with the memory array when the set of parameters used to operate the memory component is used and the temperature of the memory component reaches the second temperature.

[0170] Some examples of the method 700 and apparatus described herein may further include operations, features, components, or instructions for receiving a second indication of a threshold from a host device, wherein the threshold may be based on a second temperature level, and wherein the operation of the memory component conforms to a set of specifications associated with the memory array when possibly using a set of parameters for operating the memory component and the temperature of the memory component reaches the second temperature.

[0171] Some examples of the method 700 and apparatus described herein may further include operations, features, components, or instructions for: storing, based on generation, a value corresponding to an indication that the temperature of a memory component may have exceeded a threshold; receiving a request from a host device to read the stored value; and sending the stored value to the host device based on the received request.

[0172] In some instances of the method 700 and apparatus described herein, after receiving a signal that may be based on the operation of the memory component to initialize the operation of the memory component, the temperature of the memory component increases from a first temperature, and an indication may be generated based on the increase in the temperature of the memory component.

[0173] In some instances of the method 700 and apparatus described herein, one or more components that may be thermally coupled to a memory component may operate based on a first signal, and wherein the temperature of the memory component rises from a first temperature after receiving a signal that may be based on the operation of one or more components, and wherein an indication may be generated based on the temperature rise of the memory component.

[0174] In some instances of the method 700 and apparatus described herein, the temperature of memory components can be measured at a memory array.

[0175] Figure 8 A flowchart illustrating one or more methods 800 supporting operation of a memory array based on an indicated temperature, according to examples disclosed herein. Operation of method 800 may be implemented by a host device or its components as described herein. For example, operation of method 800 may be performed by, as referenced herein... Figure 6 The described host device performs the function. In some instances, the host device may execute a set of instructions to control the functional elements of the host device to perform the described function. Alternatively, the host device may use dedicated hardware to perform aspects of the described function.

[0176] At 805, the host device can identify commands for accessing the memory array of the memory components. Operation of 805 can be performed according to the methods described herein. In some instances, it can be performed by, as referenced... Figure 6 The described host device command component performs various aspects of the operation of 805.

[0177] At 810, the host device may delay the transmission of commands to the memory component based on the temperature of the memory component. Operation of 810 can be performed according to the methods described herein. In some instances, it can be achieved by, as referenced... Figure 6 The described host device operating components perform various aspects of the operation of 810.

[0178] At point 815, the host device can receive an indication that the temperature of the memory component has exceeded a threshold. Operation of point 815 can be performed according to the method described herein. In some instances, it can be achieved by, as referenced... Figure 6 The described host unit temperature component performs various aspects of operation 815.

[0179] At point 820, the host device may send an initial command to the memory module for accessing the memory array based on the determination that the temperature of the memory module has exceeded a threshold. The operation at point 820 can be performed according to the method described herein. In some instances, it can be performed by, as referenced... Figure 6 The described host device operating components perform various aspects of the operation of 820.

[0180] In some instances, the device as described herein can perform one or more methods, such as method 800. The device may include features, components, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor) for: identifying a command for accessing a memory array of memory components; delaying the transmission of the command to the memory component based on the temperature of the memory component; receiving an indication that the temperature of the memory component has exceeded a threshold; and sending an initial command to the memory component for accessing the memory array of the memory component based on determining that the temperature of the memory component has exceeded the threshold.

[0181] Some instances of the method 800 and device described herein may further include operations, features, components, or instructions for determining, based on a received indication, that the temperature of a memory component may have exceeded a threshold, wherein an initial command may be sent based on the determination.

[0182] Some examples of the method 800 and apparatus described herein may further include operations, features, components, or instructions for: receiving a second indication that the temperature of a memory component may have exceeded a second threshold; determining, based on the second indication, that the temperature of the memory component may have exceeded the second threshold; configuring a set of parameters for operating the memory array based on determining that the temperature of the memory component may have exceeded the second threshold; and transmitting the set of parameters to the memory array of the memory component.

[0183] Some instances of the method 800 and apparatus described herein may further include operations, features, components, or instructions for receiving a second indication that the temperature of the memory component may be below a threshold before receiving an indication that the temperature of the memory component may have exceeded a threshold.

[0184] In some instances of the method 800 and device described herein, the transmission of commands to the memory component may be delayed based on a second indication that the temperature of the memory component may be below a threshold.

[0185] Some instances of the method 800 and device described herein may further include operations, features, components, or instructions for transmitting a second command prior to receiving an indication that the temperature of the memory component may have exceeded a threshold, the second command instructing the memory component to perform a series of operations for sensing the logical state from the memory array and writing the logical state back to the memory array while the memory array may store uncertain data.

[0186] Some instances of the method 800 and device described herein may further include operations, features, components, or instructions for sending a second indication of a threshold to a memory component, wherein the threshold may be based on a second temperature level, wherein the operation of the memory component conforms to a set of specifications associated with the memory array when possibly using a set of parameters for operating the memory component and the temperature of the memory component reaches the second temperature.

[0187] Some instances of the method 800 and device described herein may further include operations, features, components, or instructions for reading a register containing a value indicating the temperature of a memory component, wherein an initial command may be sent based on a value indicating that the temperature of the memory component may have exceeded a threshold.

[0188] It should be noted that the methods described above describe possible implementations, and the operations and steps can be rearranged or otherwise modified, and other implementations are possible. Furthermore, two or more parts from the methods described can be combined.

[0189] A device is described. The device may include: a memory array; a sensor configured to sense the temperature of at least a portion of the device; a component coupled to the sensor and configured to compare the sensor's output with a threshold and indicate the result of the comparison; and a controller coupled to the component and configured to receive and process commands for accessing the memory array based on the sensor's output being greater than the threshold.

[0190] Some instances of the device may include registers coupled to components and configured to store indications of comparison results, wherein the controller may be configured to process commands based on indications stored in the registers that the sensor output may be greater than a threshold.

[0191] Some instances of the device may include a second component configured to provide a reference voltage to the component, wherein the component may be configured to compare the sensor output with the reference voltage.

[0192] Some instances of the device may include a host device configured to send commands to the controller based on an indication of the comparison result.

[0193] Some instances of the device may include a third component that may be thermally coupled to the memory array.

[0194] In some instances, components configured to compare sensor outputs include jump point comparators.

[0195] An apparatus is described. The apparatus may include: a memory array; a memory controller coupled to the memory array and configured to: determine the temperature of at least a portion of the apparatus based on a signal received for initializing the apparatus; generate an indication that the temperature of at least a portion of the apparatus has exceeded a threshold based on the determination; and process a command received from a host device for accessing the memory array based on the generated indication.

[0196] Some instances may further include, prior to the possible generation of an indication, a second indication that the device temperature may be below a threshold, based on a determination.

[0197] Some instances may further include sending instructions to the host device or register, or both, based on the generation instruction.

[0198] An apparatus is described. The apparatus may include a memory controller, which can be used to: delay transmitting commands to a memory component based on the temperature of the memory component; receive an indication that the temperature of the memory component has exceeded a threshold based on an indication; and send an initial command to the memory component for accessing a memory array of the memory component based on determining that the temperature of the memory component has exceeded the threshold.

[0199] Some instances may further include receiving a second indication that the temperature of the memory component may be below a threshold, before receiving an indication that the temperature of the memory component may have exceeded a threshold.

[0200] Some examples may further include: receiving a second indication that the temperature of the memory component may have exceeded a second threshold; determining, based on the second indication, that the temperature of the memory component may have exceeded the second threshold; configuring a set of parameters for operating the memory array based on determining that the temperature of the memory component may have exceeded the second threshold; and transmitting the set of parameters for operating the memory array to the component.

[0201] The information and signals described herein can be represented using any of a variety of different techniques and methods. For example, voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or light particles, or any combination thereof, can be used to represent data, instructions, commands, information, signals, bits, symbols, and chips that may be referenced throughout the foregoing description. Some diagrams may show signals as single signals; however, those skilled in the art will understand that the signals may represent signal buses, where the buses may have various bit widths.

[0202] The terms "electronic communication," "conductive contact," "connection," and "coupling" can refer to the relationship between components that enable the flow of signals between them. Components are considered to be in electronic communication (or in conductive contact, connected, or coupled) with each other if there exists any conductive path between them that enables the flow of signals at any given time. At any given time, the conductive path between components that are in electronic communication (or in conductive contact, connected, or coupled) can be open or closed, depending on the operation of the device containing the connected components. The conductive path between connected components can be a direct conductive path or an indirect conductive path, which may include intermediate components such as switches, transistors, or other components. In some instances, one or more intermediate components, such as switches or transistors, can be used to interrupt the flow of signals between connected components for a period of time.

[0203] The term "isolation" refers to a relationship between components in which signals are currently unable to flow between them. Components are isolated from each other if there is an open circuit between them. For example, components separated by a switch positioned between two components are isolated from each other when the switch is open. When a controller isolates two components, it prevents signals from flowing between the components using previously permitted conductive paths.

[0204] As used herein, the term “generally” means that a modified feature (e.g., a verb or adjective modified by the term “generally”) need not be absolute but must be close enough to achieve the advantages of the feature.

[0205] The devices containing memory arrays discussed herein can be formed on semiconductor substrates such as silicon, germanium, silicon-germanium alloys, gallium arsenide, and gallium nitride. In some instances, the substrate is a semiconductor wafer. In other instances, the substrate can be a silicon-on-insulator (SOI) substrate, such as silicon-on-glass (SOG) or silicon-on-sapphire (SOP), or an epitaxial layer of semiconductor material on another substrate. The conductivity of the substrate or subregions of the substrate can be controlled by using doping with various chemical species, including but not limited to phosphorus, boron, or arsenic. Doping can be performed during the initial formation or growth of the substrate, either by ion implantation or by any other doping method.

[0206] The switching components or transistors discussed herein may represent field-effect transistors (FETs) and include a three-terminal device comprising a source, drain, and gate. These terminals may be connected to other electronic components via a conductive material, such as a metal. The source and drain may be conductive and may comprise heavily doped (e.g., degenerate) semiconductor regions. The source and drain may be separated by lightly doped semiconductor regions or channels. If the channel is n-type (i.e., the majority of charge carriers are electrons), the FET may be called an n-type FET. If the channel is p-type (i.e., the majority of charge carriers are holes), the FET may be called a p-type FET. The channel may be end-capped by an insulating gate oxide. The channel conductivity can be controlled by applying a voltage to the gate. For example, applying a positive or negative voltage to an n-type FET or a p-type FET, respectively, can make the channel conductive. When a voltage greater than or equal to the transistor's threshold voltage is applied to the transistor's gate, the transistor may be "on" or "activated." When a voltage less than the transistor's threshold voltage is applied to the transistor's gate, the transistor may be "off" or "deactivated."

[0207] The description herein, illustrated with reference to the accompanying drawings, describes exemplary configurations and does not represent all instances that can be implemented or that are within the scope of the claims. The term "exemplary" as used herein means "serving as an example, illustration, or description" and is not "preferred" or "superior" to other instances. The detailed description includes specific details to provide an understanding of the described techniques. However, these techniques can be practiced without these specific details. In some cases, well-known structures and devices are shown in block diagram form to avoid obscuring the concepts of the described instances.

[0208] In the accompanying drawings, similar components or features may have the same reference numerals. Additionally, various components of the same type can be distinguished by a dash following the reference numeral and a second numeral used to differentiate them among similar components. If only the first reference numeral is used in the specification, the description applies to any of the similar components having the same first reference numeral but independent of the second reference numeral.

[0209] The information and signals described herein can be represented using any of a variety of different techniques and methods. For example, voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or light particles, or any combination thereof, can be used to represent data, instructions, commands, information, signals, bits, symbols, and chips that may be referenced throughout the foregoing description.

[0210] The various illustrative blocks and modules described in connection with this disclosure may be implemented or performed using a general-purpose processor, DSP, ASIC, FPGA or other programmable logic device, discrete gate or transistor logic, discrete hardware component, or any combination thereof designed to perform the functions described herein. A general-purpose processor may be a microprocessor; however, alternatively, the processor may be any processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices (e.g., a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors incorporating a DSP core, or any other such configuration).

[0211] The functionality described herein can be implemented in hardware, software executed by a processor, firmware, or any combination thereof. If implemented in software executed by a processor, the functionality can be stored as one or more instructions or code on or transmitted over a computer-readable medium. Other examples and embodiments are within the scope of this disclosure and the appended claims. For example, due to the nature of software, the functionality described above can be implemented using software executed by a processor, hardware, firmware, hardwired, or any combination thereof. Features implementing the functionality can also be physically located in various locations, including distributions such that portions of the functionality are implemented in different physical locations. Similarly, as used herein (included in the claims), "or" as used in a list of items (e.g., a list of items ending with phrases such as "at least one of" or "one or more of") indicates an inclusive list, such that a list of at least one of, for example, A, B, or C means A or B or C or AB or AC or BC or ABC (i.e., A and B and C). Similarly, as used herein, the phrase "based on" should not be construed as referring to a set of closing conditions. For example, without departing from the scope of this disclosure, an exemplary step described as "based on condition A" may be based on both condition A and condition B. In other words, as used herein, the phrase "based on" should be interpreted in the same way as the phrase "at least partially based on".

[0212] Computer-readable media includes both non-transitory computer storage media and communication media, with communication media encompassing any media that facilitates the transfer of a computer program from one place to another. Non-transitory storage media can be any usable media accessible by a general-purpose or special-purpose computer. By way of example, and not limitation, non-transitory computer-readable media can include RAM, ROM, electrically erasable programmable read-only memory (EEPROM), optical disc (CD) ROM or other optical disc storage devices, magnetic disk storage devices or other magnetic storage devices, or any other non-transitory media that can be used to carry or store desired program code components in the form of instructions or data structures and is accessible by a general-purpose or special-purpose computer or a general-purpose or special-purpose processor. Furthermore, any connection is appropriately referred to as computer-readable media. For example, if software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then such coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave are included in the definition of media. As used herein, disks and optical discs include CDs, laser discs, optical discs, digital versatile discs (DVDs), floppy disks, and Blu-ray discs, where disks typically reproduce data magnetically, while optical discs reproduce data optically using lasers. Combinations of these are also included within the scope of computer-readable media.

[0213] The description herein is provided to enable those skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the scope of this disclosure. Therefore, this disclosure is not limited to the examples and designs described herein, but is given the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method comprising: Receive signals that initialize memory components, including memory arrays; The temperature of the memory component is determined at least in part based on the received signal; An indication is generated, at least in part, based on the determination, that the temperature of the memory component has exceeded a threshold. A second indication is generated, at least in part, based on the determination, that the rate of change associated with the temperature of the memory component has exceeded a second threshold; as well as The command received from the host device for accessing the memory array is processed at least in part based on the generation of the instruction, the second instruction, or both.

2. The method according to claim 1, further comprising: Before generating the indication to the host device, a second indication that the temperature of the memory component is below the threshold is generated, at least in part based on the determination.

3. The method according to claim 1, further comprising: A second indication is generated, at least in part, based on the determination, that the temperature of the memory component has exceeded a second threshold. as well as The processing of a second command for accessing the memory array is avoided, at least in part, based on the generation of the second instruction.

4. The method of claim 1, further comprising: The instruction is transmitted to the host device or register, or both, at least in part based on the generation of the instruction.

5. The method of claim 1, further comprising: Before receiving the command and the indication that the temperature of the memory component has exceeded the threshold, a second command is received from the host device; as well as The second command is avoided at least because the temperature of the memory component is below the threshold.

6. The method of claim 1, further comprising: The command is received from the host device before the indication that the temperature of the memory component has exceeded the threshold is generated; as well as Processing of the command is delayed until an indication is generated that the temperature of the memory component has exceeded the threshold.

7. The method of claim 1, further comprising: The temperature of the memory component is compared with the threshold. The temperature of the memory component is determined to have exceeded the threshold, at least in part, based on the comparison, wherein the indication is generated based at least in part on the determination; and The first set of parameters for operating the memory array is used, at least in part, based on the determination that the temperature of the memory component has exceeded the threshold.

8. The method of claim 1, further comprising: The temperature of the memory component is compared with a second threshold. as well as The temperature of the memory component is determined to have exceeded the second threshold, at least in part, based on the comparison, and a second indication is generated based at least in part on the determination.

9. The method of claim 1, wherein the threshold is based at least in part on a second temperature level, wherein the operation of the memory component conforms to a set of specifications associated with the memory array when using a set of parameters for operating the memory component and the temperature of the memory component reaches the second temperature level.

10. The method of claim 1, further comprising: The host device receives a second indication of the threshold, wherein the threshold is at least partially based on a second temperature level, and wherein the operation of the memory component conforms to a set of specifications associated with the memory array when using a set of parameters for operating the memory component and the temperature of the memory component reaches the second temperature level.

11. The method of claim 1, further comprising: The value corresponding to the indication that the temperature of the memory component has exceeded the threshold is stored, at least in part based on the generation; Receive a request to read the stored value from the host device; as well as The stored value is transmitted to the host device at least in part based on receiving the request.

12. The method of claim 1, wherein after receiving the signal initiating the operation of the memory component based at least in part on the operation of the memory component, the temperature of the memory component increases from a first temperature, and wherein the indication is generated based at least in part on the temperature increase of the memory component.

13. The method of claim 1, wherein one or more components thermally coupled to the memory component operate at least in part based on the signal, and wherein the temperature of the memory component rises from a first temperature after receiving the signal at least in part based on the operation of the one or more components, and wherein the indication is generated at least in part based on the temperature rise of the memory component.

14. A method comprising: Receive signals that initialize memory components, including memory arrays; The temperature of the memory component is determined at least in part based on the received signal; An indication is generated, at least in part, based on the determination, that the temperature of the memory component has exceeded a threshold. The command received from the host device for accessing the memory array is processed at least in part based on the generation of the instruction; as well as Before generating the indication that the temperature of the memory component has exceeded the threshold, a series of operations are performed to sense the logical state from the memory array and write the logical state back to the memory array while storing uncertain data in the memory array.

15. A method comprising: Receive signals that initialize memory components, including memory arrays; The temperature of the memory component is determined at least in part based on the received signal; An indication is generated, at least in part, based on the determination, that the temperature of the memory component has exceeded a threshold. The command received from the host device for accessing the memory array is processed at least in part based on the generation of the instruction; as well as Before generating the indication that the temperature of the memory component has exceeded the threshold, a second command is received from the host device to perform the operation of sensing the logical state from the memory array and writing the logical state back to the memory array while storing indeterminate data in the memory array.

16. A method comprising: Commands that identify the memory array used to access memory components; The transmission of the command to the memory component is delayed, at least in part, based on the temperature of the memory component. The indication that the temperature of the memory component has exceeded a threshold is received, at least in part, based on an indication. The second indication, received at least in part based on a second indication, indicates that the rate of change associated with the temperature of the memory component has exceeded a second threshold; and An initial command for accessing the memory array of the memory component is transmitted to the memory component at least in part based on a second indication that the temperature of the memory component has exceeded the threshold, the rate of change has exceeded the second threshold, or both.

17. The method of claim 16, further comprising: The initial command is sent based at least in part on the determination that the temperature of the memory component has exceeded the threshold, based at least in part on the determination.

18. The method of claim 16, further comprising: The system receives a second indication that the temperature of the memory component has exceeded a second threshold. The temperature of the memory component is determined to have exceeded the second threshold, at least in part, based on the second indication; The set of parameters for operating the memory array is configured at least in part based on determining that the temperature of the memory component has exceeded the second threshold; as well as The parameter set is transmitted to the memory array of the memory component.

19. The method of claim 16, further comprising: Before receiving the indication that the temperature of the memory component has exceeded the threshold, a second indication that the temperature of the memory component is below the threshold is received.

20. The method of claim 19, wherein the transmission of the command to the memory component is delayed at least in part based on receiving a second indication that the temperature of the memory component is below the threshold.

21. The method of claim 16, further comprising: A second indication of the threshold is transmitted to the memory component, wherein the threshold is based at least in part on a second temperature level, wherein the operation of the memory component conforms to a set of specifications associated with the memory array when using a set of parameters for operating the memory component and the temperature of the memory component reaches the second temperature level.

22. The method of claim 16, further comprising: The register containing a value indicating the temperature of the memory component is read, wherein the initial command is sent based at least in part on the value indicating that the temperature of the memory component has exceeded the threshold.

23. A method comprising: Commands that identify the memory array used to access memory components; The transmission of the command to the memory component is delayed, at least in part, based on the temperature of the memory component. The indication that the temperature of the memory component has exceeded a threshold is received, at least in part, based on an indication. An initial command for accessing the memory array of the memory component is transmitted to the memory component, at least in part, based on the determination that the temperature of the memory component has exceeded the threshold. as well as Before receiving the indication that the temperature of the memory component has exceeded the threshold, a second command is transmitted, the second command instructing the memory component to perform a series of operations for sensing the logical state from the memory array and writing the logical state back to the memory array while storing indeterminate data in the memory array.

24. An apparatus comprising: Memory array; A sensor configured to sense the temperature of at least a portion of the device; A component coupled to the sensor and configured to compare the sensor's output with a threshold and indicate the result of the comparison; A tunable logic component configured to identify the rate of change of the device's temperature based on the output of the sensor, compare the rate of change of the temperature with a second threshold, and indicate the result of the comparison; as well as A controller coupled to the component and configured to receive and process commands for accessing the memory array based at least in part on the sensor’s output being greater than the threshold, the rate of change of the temperature being greater than the second threshold, or both.

25. The device according to claim 24, further comprising: A register, coupled to the component and configured to store an indication of the result of the comparison, wherein the controller is configured to process the command based at least in part on an indication indicating that the output of the sensor is greater than the threshold.

26. The device according to claim 24, further comprising: A second component is configured to provide a reference voltage to the component, wherein the component is configured to compare the output of the sensor with the reference voltage.

27. The device according to claim 24, further comprising: A host device configured to transmit commands to the controller based at least in part on the indication of the result of the comparison.

28. The device of claim 24, wherein the component configured to compare the output of the sensor includes a jump point comparator.

29. An apparatus comprising: Memory array; as well as A memory controller, coupled to the memory array and capable of: The temperature of at least a portion of the device is determined, at least in part, based on a signal received that initiates the operation of the device. An indication is generated, at least in part, based on the determination, that the temperature of at least a portion of the device has exceeded a threshold. A second indication is generated, at least in part, based on the determination, that the rate of change associated with the temperature of the device has exceeded a second threshold; as well as The command received from the host device for accessing the memory array is processed at least in part based on the generation of the instruction, the second instruction, or both.

30. The device of claim 29, wherein the memory controller is further configured to: Before generating the indication, a second indication that the temperature of the device is below the threshold is generated, at least in part based on the determination.

31. The device of claim 29, wherein the memory controller is further configured to: The instruction is transmitted to the host device or register, or both, at least in part based on the generation of the instruction.

32. An apparatus comprising: The memory controller can be used to: Commands that identify the memory array used to access memory components; The transmission of the command to the memory component is delayed, at least in part, based on the temperature of the memory component. The indication that the temperature of the memory component has exceeded a threshold is received, at least in part, based on an indication. The second indication, received at least in part based on a second indication, indicates that the rate of change associated with the temperature of the memory component has exceeded a second threshold; and An initial command for accessing the memory array of the memory component is transmitted to the memory component at least in part based on a second indication that the temperature of the memory component has exceeded the threshold, the rate of change has exceeded the second threshold, or both.

33. The device of claim 32, wherein the memory controller is further configured to: Before receiving the indication that the temperature of the memory component has exceeded the threshold, a second indication that the temperature of the memory component is below the threshold is received.

34. The device of claim 32, wherein the memory controller is further configured to: The system receives a second indication that the temperature of the memory component has exceeded a second threshold. The temperature of the memory component is determined to have exceeded the second threshold, at least in part, based on the second indication; The set of parameters for operating the memory array is configured at least in part based on determining that the temperature of the memory component has exceeded the second threshold; as well as The set of parameters used to operate the memory array is transmitted to the memory component.

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