Insulation support structure, coating device and deposition device

Abstract

The present invention provides an insulating support structure, a coating device and a deposition device, wherein the insulating support structure comprises a support body and a sleeve, wherein one support side of the support body is provided with an engaging groove, and the other support side is provided with an engaging protrusion; the sleeve sleeves the support body, and a spacer is provided between the sleeve and the support body, wherein the spacer is used to connect the sleeve and the support body, and an interlayer space with a connecting gap is formed between the sleeve and the support body, wherein the connecting gap is used to connect the interlayer space with the external space of the sleeve. The present invention adopts the engaging protrusion and the engaging groove to cooperate, realizes the insulating support between the multi-level electrode plates, cancels the insulating rod structure, and avoids the short circuit problem caused by the deposition of the continuous film structure by providing the interlayer space.

Description

Technical Field

[0001] The invention belongs to the technical field of film coating, and relates to an insulating support structure, a film coating device and a deposition device. Background Art

[0002] Solar cells are multi-layer devices. Typical solar cells usually include a pin stacked structure. The layers of the pin stacked structure are deposited in a large-scale PECVD deposition device using a plasma enhanced chemical vapor deposition (PECVD) process. For example, a large-area excitation electrode plate and a ground electrode plate are arranged in parallel in a reaction chamber. A large-area glass substrate can be placed on the surface of the electrode plate. The reaction gas enters the reaction chamber from the air inlet, and the RF excitation power supply provides RF energy to the excitation electrode plate to ionize the reaction gas into plasma. A thin film is deposited on the surface of the substrate, and the remaining gas is discharged from the air outlet. The equipment cannot be mass-produced, resulting in high deposition preparation costs.

[0003] Chinese patent CN201183822Y discloses a thin film deposition device, which includes a box, a reaction chamber and a radio frequency excitation source, wherein the reaction chamber is placed inside the box, the box has a gas inlet and a gas outlet, the reaction chamber includes a metal upper beam, a lower beam and a metal side wall connected to the upper beam and the lower beam, and a first electrode plate and a second electrode plate are provided between the upper beam and the lower beam, and the first electrode plate and the second electrode plate are electrically insulated from each other and are equidistant, parallel and alternately arranged at intervals, and the reaction gas enters the space between the first electrode plate and the second electrode plate from the inlet and is discharged from the box through the gas outlet. The thin film deposition device can greatly improve the efficiency of thin film deposition, especially large-area thin film deposition, and can reduce cross contamination between deposition layers.

[0004] For the deposition of films with good conductivity, the structure of parasitic deposition of continuous films is prone to occur during the deposition process, resulting in short circuit or leakage, which seriously affects the stability of long-term discharge of the electrode array. Therefore, how to provide an insulating support structure in the deposition device to effectively avoid short circuit and leakage problems after deposition and realize large-scale deposition preparation has become a technical problem that urgently needs to be solved. Summary of the invention

[0005] In view of the shortcomings of the prior art, the purpose of the present invention is to provide an insulating support structure, a coating device and a deposition device, which adopt interlocking protrusions and interlocking grooves to cooperate to achieve insulating support between multi-level electrode plates, thereby eliminating the insulating rod structure. Furthermore, the electrode plates on both sides of the insulating support structure form a sandwich space, which effectively avoids the short circuit problem caused by the deposition of a continuous film structure, and has the characteristics of simple structure and easy assembly.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] In the first aspect, the present invention provides an insulating support structure, which includes a support body and a sleeve, wherein one support side of the support body is provided with an engaging groove, and the other support side is provided with an engaging protrusion; the sleeve is sleeved with the support body, and a spacer is provided between the sleeve and the support body, the spacer is used to connect the sleeve and the support body, and an interlayer space with a connecting gap is formed between the sleeve and the support body, and the connecting gap is used to connect the interlayer space with the external space of the sleeve.

[0008] The insulating support structure in the present invention adopts a structural combination of an interlocking groove and an interlocking protrusion. During use, for a structure in which multiple electrode plates are stacked at intervals, an insulating support structure is arranged between two adjacent electrode plates, and the interlocking grooves and the interlocking protrusions of the two adjacent insulating support structures are interlocked to achieve support for multiple electrode plates, thereby eliminating the insulating rod structure that passes through multiple electrode plates. Furthermore, the insulating support structures between each electrode plate are independent structures, which are easy to disassemble, assemble and replace.

[0009] In addition, in the present invention, a sleeve is arranged around the outer periphery of the supporting body, and an interlayer space with a connecting gap is formed, so that the interlayer space is connected with the external space of the sleeve. Even if a continuous film grows onto the insulating support structure during the deposition process, the two substrates cannot be connected due to the existence of the connecting gap and the interlayer space, thereby preventing the conductive film from causing leakage or short circuit between the electrode plates, affecting the long-term discharge stability of the electrode array.

[0010] It should be noted that the present invention does not impose any specific requirements or special limitations on the size of the insulating support structure, and those skilled in the art may make reasonable choices based on corresponding usage requirements.

[0011] It should be noted that the present invention does not impose any specific requirements or restrictions on the material of the insulating support structure, and those skilled in the art can reasonably select insulating materials, such as insulating ceramics, according to the insulation requirements.

[0012] It should be noted that the present invention does not make any specific requirements or special limitations on the structure of the spacer. Optionally, the spacer can be a plurality of fixed protrusions arranged at intervals along the circumferential direction of the inner wall of the sleeve, or a continuous annular protrusion arranged around the inner wall of the sleeve, to achieve the connection between the support body and the sleeve.

[0013] It should be noted that in the present invention, the support body and the sleeve are connected by spacers, and the interlayer space formed is the interlayer space formed between the outer wall of the support body and the inner wall of the sleeve. Furthermore, there are no specific requirements and special limitations on the shape of the outer wall of the support body and the shape of the inner wall of the sleeve. It is sufficient to form an interlayer between the support body and the sleeve. For example, along the axial direction of the support body, the interlayer space can be winding, gradually expanding or gradually contracting.

[0014] For example, the support body and the sleeve body are staggered so that at least one end surface on the same side of the two is located on a non-same plane, that is, after the insulating support structure is stacked for use, a connecting gap can be formed between the substrate and the sleeve body or between the sleeve body and the support body, and the connecting gap connects the interlayer space with the outside of the sleeve body. Furthermore, there are no specific requirements and special limitations on the shape of the connecting gap. For example, along the circumference of the support body, the connecting gap is winding, gradually expanding or gradually contracting.

[0015] It should be noted that the connecting gap in the present invention can be a gap formed by the misalignment between the support body and the sleeve body and connected to the interlayer space, or it can be a gap formed between the sleeve body and the substrate. Therefore, during the coating deposition process, even if the continuous film structure is formed on the insulating support structure, due to the existence of the gap and the interlayer space, the continuous film enters the interlayer space through the gap, avoiding problems such as short circuit caused by connecting the two substrates. For example, the support body and the sleeve body are staggered so that at least one end face on the same side of the two is located on a non-same plane, that is, after the insulating support structure is stacked and used, a connecting gap can be formed between the substrate and the sleeve body or between the sleeve body and the support body. The connecting gap connects the interlayer space with the outside of the sleeve body. Furthermore, there are no specific requirements and special limitations on the shape of the connecting gap. For example, along the circumference of the support body, the connecting gap is winding, gradually expanding or gradually shrinking.

[0016] As a preferred technical solution of the present invention, in the supporting direction of the insulating support structure, at least one end of the supporting body and the sleeve body are staggered to form the connecting gap.

[0017] Preferably, the height of the fitting protrusion is greater than the depth of the fitting groove.

[0018] Preferably, the difference between the height of the embedding protrusion and the depth of the embedding groove is greater than the thickness of the substrate sandwiched between adjacent insulating support structures.

[0019] The present invention controls the height of the interlocking protrusion and the depth of the interlocking groove to ensure that the substrate is clamped during use. When the two insulating support structures are used in combination, the interlocking protrusion and the interlocking groove match and interlock, and a gap is formed due to the height difference, and the substrate is clamped in the gap. Therefore, the size of the gap is greater than or equal to the thickness of the substrate, which can effectively avoid the influence of stacking pressure on the substrate.

[0020] As a preferred technical solution of the present invention, the supporting body, the sleeve and the spacer are an integrated structure or a split structure.

[0021] It should be noted that in the present invention, the supporting body, the sleeve and the spacer are an integrated structure or a split structure. For the split structure, it can be optionally included that the supporting body, the spacer and the sleeve are all independent components, and then the spacer is independently connected to the supporting body and the sleeve respectively, or the supporting body and the sleeve are a split structure, and the spacer is an integrated structure with the supporting body or the sleeve.

[0022] Preferably, the support body and the sleeve are split structures, and a limiting structure is arranged between the support body and the sleeve, and the limiting structure is used to limit and fix the sleeve at the position of the support body.

[0023] It should be noted that the fixing function of the limiting structure in the present invention can be achieved through concave and convex positioning points, or through threaded fastening. Taking concave and convex positioning points as an example, a plurality of mutually matching positioning holes and positioning protrusions are provided at the limiting structure, and the positioning holes and positioning protrusions are respectively provided on the supporting body and the sleeve body, and fixation is achieved by engaging the positioning holes and the positioning protrusions. Taking threaded fastening as an example, matching threads are provided at the limiting structure, that is, matching screw-on thread structures are respectively provided on the supporting body and the sleeve body, and while achieving limiting, the threads are tightened to achieve fixation.

[0024] Preferably, the limiting structure includes a spacer in a snap-fit ​​structure, the snap-fit ​​structure of the spacer includes a first snap-fit ​​structure and a second snap-fit ​​structure that match each other, and the first snap-fit ​​structure and the second snap-fit ​​structure are independently arranged on the supporting body and the sleeve body respectively.

[0025] In the present invention, the spacer is designed to be a first engaging structure and a second engaging structure that are matched and engaged, and the sleeve is limited by the matching engagement to achieve detachable assembly, thereby improving the convenience of the insulating support structure during installation.

[0026] It should be noted that the first snap-fitting structure and the second snap-fitting structure in the present invention are matched and snap-fitted with each other. Further, the first snap-fitting structure and the second snap-fitting structure can be independently a snap-fitting groove and a snap-fitting protrusion, respectively. For example, the snap-fitting protrusion is arranged on the sleeve body, and the snap-fitting groove is arranged on the supporting body, so as to facilitate the assembly of the substrate through hole; or, the snap-fitting step structures are matched and snap-fitted with each other. Further, a thread can be arranged on the contact side of the snap-fitting step structure to achieve fastening and fixation.

[0027] Preferably, the outer wall size of the support body increases from top to bottom, and the spacer is arranged against the outer wall of the support body. Optionally, the sleeve and the support body are split structures, and the spacer and the sleeve are integrated structures. During the assembly process, the sleeve is sleeved along the support body, and the spacer is pressed against the outer wall of the support body to prevent it from sliding off.

[0028] The present invention arranges the outer wall of the support body to increase in size from top to bottom, so that during the process of sleeve-mounting the support body, the spacer can resist the outer wall of the support body to prevent the spacer and the sleeve from sliding down, and can provide a guiding effect during the assembly process, making it convenient for the support body to pass through the through hole of the electrode plate.

[0029] In a second aspect, the present invention provides a coating device, which includes the insulating support structure as described in the first aspect.

[0030] It should be noted that the present invention does not impose any specific requirements or restrictions on the structure of the coating device and the coating form. In the present invention, the insulating support structure only needs to support and insulate the substrate.

[0031] In a third aspect, the present invention provides a deposition device, which includes a shell, in which excitation electrode plates and grounding electrode plates are alternately arranged, a deposition cavity is formed between the excitation electrode plates and the grounding electrode plates, and the excitation electrode plates and / or the grounding electrode plates are used to place a substrate.

[0032] At least one support member is arranged between the excitation electrode plate and the grounding electrode plate, and through holes are opened in the excitation electrode plate and the grounding electrode plate at the support member. The support member includes at least one insulating support structure as described in the first aspect, and the insulating support structure is respectively arranged between the excitation electrode plate and the grounding electrode plate, and the engaging protrusion of the insulating support structure passes through the through hole and is embedded in the engaging groove of the adjacent insulating support structure.

[0033] In the present invention, an insulating support structure is used to insulate and support multiple excitation electrode plates and multiple grounding electrode plates, which effectively avoids the formation of a continuous film structure due to deposition, causing short circuits or leakage between the electrode plates. After the raw gas is ionized, the plasma can flow through the through-hole gaps to the interface reaction areas of each electrode plate, thereby achieving the purpose of balanced discharge, further making the deposited film more uniform and realizing stable and large-scale deposition.

[0034] It should be noted that the present invention does not make specific requirements or special limitations on the arrangement direction of the excitation electrode plates and the grounding electrode plates. They can be arranged horizontally or vertically. In the horizontally arranged structure, it is necessary to add clamping parts to provide a fastening force between the insulating support structures; in the vertically arranged structure, the direct gravity of each component can be used to meet the fastening force, and further clamping parts can be added.

[0035] It should be noted that the present invention does not make specific requirements and special limitations on the number and position of support members. The number of support members can be reasonably set according to the area and number of electrode plates. For example, the support members are respectively arranged at the four top corners of the electrode plate. Furthermore, support members can also be added in the central area of ​​the electrode plate.

[0036] It should be noted that the present invention does not make any specific requirements or special limitations on the shape of the shell, and those skilled in the art can make reasonable choices according to their needs. For example, the shell can be a cylindrical structure or a rectangular structure. Furthermore, other necessary devices to ensure deposition are provided in the shell, such as a heater and a vacuum pump to ensure the temperature and pressure of the deposition environment.

[0037] As a preferred technical solution of the present invention, the excitation electrode plate and the grounding electrode plate are arranged at intervals along the vertical direction.

[0038] Preferably, the height of the connecting gap is 0.1-20 mm, for example, 0.1 mm, 0.5 mm, 1.0 mm, 2.0 mm, 3.0 mm, 4.0 mm, 5.0 mm, 6.0 mm, 7.0 mm, 8.0 mm, 9.0 mm, 10.0 mm, 11.0 mm, 12.0 mm, 13.0 mm, 14.0 mm, 15.0 mm, 16.0 mm, 17.0 mm, 18.0 mm, 19.0 mm or 20.0 mm, and more preferably 0.5-2.5 mm.

[0039] As a preferred technical solution of the present invention, an air inlet distribution plate is provided on the air inlet side of the shell, and the raw material gas is evenly dispersed into each of the deposition chambers through the air inlet distribution plate.

[0040] Preferably, a gas outlet distribution plate is provided on the gas outlet side of the shell.

[0041] Preferably, a hollow structure is provided on the excitation electrode plate and / or the grounding electrode plate.

[0042] As a preferred technical solution of the present invention, at least one side surface of the excitation electrode plate and / or the grounding electrode plate is passivated to form a passivation film.

[0043] Preferably, the passivation treatment includes oxidation treatment or deposition treatment.

[0044] Preferably, the oxidation treatment comprises anodizing treatment or heating oxidation treatment.

[0045] Preferably, the deposition process includes a PVD method or a PECVD method.

[0046] Preferably, the material of the passivation film includes at least one of silicon carbide, silicon nitride, silicon oxide or aluminum oxide.

[0047] It should be noted that in the present invention, the excitation electrode plate is connected to an excitation power supply, and the grounding electrode plate is connected to a grounding terminal, so as to ensure deposition in the deposition chamber. Furthermore, the access position of the excitation power supply is set at the edge side of the excitation electrode plate, located in the area shielded by the adjacent grounding electrode plates on both sides, and the access position of the grounding terminal is set at the edge side of the grounding electrode plate. In addition, the excitation power supply includes at least one of a radio frequency power supply, an intermediate frequency power supply or a high frequency power supply.

[0048] As a preferred technical solution of the present invention, the plane size of the excitation electrode plate is smaller than the plane size of the grounding electrode plate.

[0049] Preferably, the excitation electrode plate and the grounding electrode plate are coaxially arranged, and the edges of the excitation electrode plate and the grounding electrode plate are staggered at a spacing of 3 to 60 mm, for example, 3 mm, 6 mm, 12 mm, 18 mm, 24 mm, 30 mm, 36 mm, 42 mm, 48 mm, 54 mm or 60 mm.

[0050] Preferably, the equivalent diameter of the through hole is 3-60 mm, for example, 3 mm, 6 mm, 12 mm, 18 mm, 24 mm, 30 mm, 36 mm, 42 mm, 48 mm, 54 mm or 60 mm.

[0051] It should be noted that the present invention does not impose any specific requirements or special limitations on the diameter of the through hole. Those skilled in the art may make a reasonable choice based on the size of the insulating support structure and the connectivity requirements. For example, the shape of the through hole may be polygonal or circular.

[0052] Exemplarily, a deposition method of the above deposition device is provided, comprising:

[0053] A silicon wafer is placed in each deposition chamber, heated and introduced with raw material gas, and the exciting electrode plate and the grounding electrode plate cooperate to ionize the raw material gas and deposit it on the surface of the silicon wafer.

[0054] As a preferred technical solution of the present invention, the deposition device is used to prepare silicon wafer batteries.

[0055] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0056] Compared with the prior art, the present invention has the following beneficial effects:

[0057] The insulating support structure in the present invention adopts a structural combination of an interlocking groove and an interlocking protrusion. During use, for a structure in which multiple electrode plates are stacked at intervals, an insulating support structure is arranged between two adjacent electrode plates, and the interlocking grooves and the interlocking protrusions of the two adjacent insulating support structures are interlocked to achieve support for multiple electrode plates, thereby eliminating the insulating rod structure that passes through multiple electrode plates. Furthermore, the insulating support structures between each electrode plate are independent structures, which are easy to disassemble, assemble and replace.

[0058] In addition, in the present invention, a sleeve is arranged around the outer periphery of the supporting body, and an interlayer space with a connecting gap is formed, so that the interlayer space is connected with the external space of the sleeve. Even if a continuous film grows onto the insulating support structure during the deposition process, the two substrates cannot be connected due to the existence of the connecting gap and the interlayer space, thereby preventing the conductive film from causing leakage or short circuit between the electrode plates, affecting the long-term discharge stability of the electrode array. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] Figure 1 A schematic diagram of an insulating support structure provided in a specific embodiment of the present invention, a represents the height of the connecting gap, b represents the height of the fitting protrusion, and c represents the depth of the fitting groove;

[0060] Figure 2 is a schematic diagram of an insulating support structure provided in a specific embodiment of the present invention,

[0061] Figure 3 A schematic diagram of an insulating support structure provided in a specific embodiment of the present invention;

[0062] Figure 4 A schematic diagram of an insulating support structure provided in a specific embodiment of the present invention;

[0063] Figure 5 This is a schematic diagram of the internal structure of a deposition device provided in a specific embodiment of the present invention, and the direction of the arrow represents the direction of raw material intake;

[0064] Figure 6 A schematic diagram of the installation of an insulating support structure provided in a specific embodiment of the present invention;

[0065] Figure 7A schematic diagram of the installation of an insulating support structure provided in a specific embodiment of the present invention;

[0066] Figure 8 The figure is a schematic diagram of the arrangement structure of the excitation electrode plate and the grounding electrode plate in the deposition device provided in a specific embodiment of the present invention.

[0067] Among them, 1-insulating support structure; 11-support body; 12-embedded groove; 13-embedded protrusion; 14-sleeve; 15-sandwich space; 16-spacer; 17-limiting structure; 2-deposition device; 21-excitation electrode plate; 22-grounding electrode plate; 23-air inlet distribution plate; 24-air outlet distribution plate. DETAILED DESCRIPTION

[0068] It should be understood that, in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0069] It should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "disposed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood by specific circumstances.

[0070] The technical solution of the present invention is further illustrated below through specific implementation methods.

[0071] In a specific embodiment, an insulating support structure 1 is provided in an embodiment of the present invention, such as Figure 1 As shown, the insulating support structure 1 includes a support body 11 and a sleeve 14, one side of the support body 11 is provided with an engaging groove 12, and the other side of the support body is provided with an engaging protrusion 13; the sleeve is sleeved with the support body 11, and a spacer 16 is provided between the sleeve 14 and the support body 11, and the spacer 16 is used to connect the sleeve 14 and the support body 11, and an interlayer space 15 with a connecting gap is formed between the sleeve 14 and the support body 11, and the connecting gap is used to connect the interlayer space with the external space of the sleeve (such as Figure 1Optionally, the insulating support structure 1 is made of insulating ceramic, and the spacer 16 includes a plurality of fixed protrusions arranged at intervals along the inner wall of the sleeve 14 circumferentially, or a continuous annular protrusion arranged around the inner wall of the sleeve 14 .

[0072] Optionally, in the embodiment of the present invention, the connecting gap can be a gap formed by the misalignment between the support body 11 and the sleeve 14 and connected to the interlayer space 15, or it can be a gap formed between the sleeve 14 and the substrate. Therefore, during the coating deposition process, even if a continuous film structure is formed on the insulating support structure, due to the existence of the connecting gap and the interlayer space 15, the continuous film enters the interlayer space 15 through the connecting gap, thereby avoiding problems such as short circuit caused by connecting the two substrates.

[0073] Specifically, in Figure 1 As shown, the corresponding ends of the support body 11 and the sleeve 14 are staggered to form a connecting gap, and the spacer 16 is arranged at the end of the sleeve 14 close to the engaging groove 12. During the superposition and use of multiple insulating support structures, only the sleeve 14 is located on one side of the engaging protrusion 13 to form a gap with the electrode plate, thereby connecting with the interlayer space 15, so that this side can effectively avoid the generation of a continuous film structure during the deposition process, thereby improving the insulation effect of the insulating support structure.

[0074] Specifically, Figure 2 As shown, the two corresponding ends of the support body 11 and the sleeve 14 are staggered to form a connecting gap, that is, multiple insulating support structures are stacked and used, and both ends of the sleeve 14 form gaps with the electrode plates, so that the gaps are connected with the interlayer space 15, so that the electrode plates on both sides of the insulating support structure can avoid the generation of continuous film structures, ensuring double-sided deposition and coating of the silicon wafer.

[0075] Specifically, the height b of the interlocking protrusion 13 is greater than the depth c of the interlocking groove 12, thereby providing a corresponding clamping space for the electrode plate. If the height of the clamping space is less than or equal to the thickness of the electrode plate, the electrode plate is squeezed and clamped; further, the difference between the height of the interlocking protrusion 13 and the depth of the interlocking groove 12 is greater than the thickness of the substrate sandwiched between the adjacent insulating support structures. In the embodiment of the present invention, by setting the height of the interlocking protrusion 13 to be greater than the depth of the interlocking groove 12, the reserved space can be used to place the electrode plate, and the electrode plate will not be squeezed by the insulating support structure 1, so the weight above the insulating support structure 1 will not act on the electrode plate below, but will be supported by the interlocking protrusion 13.

[0076] Specifically, the supporting body 11 , the sleeve 14 and the spacer 16 are an integrated structure or a split structure.

[0077] Furthermore, the support body 11 and the sleeve 14 are of a split structure, and a limiting structure 17 is provided between the support body 11 and the sleeve 14 , and the limiting structure 17 is used to limit and fix the sleeve 14 at the position of the support body 11 .

[0078] like Figure 3 As shown, the limiting structure 17 includes a spacer 16 in a snap-fit ​​structure, and the snap-fit ​​structure of the spacer 16 includes a first snap-fit ​​structure and a second snap-fit ​​structure that match and snap together, and the first snap-fit ​​structure and the second snap-fit ​​structure are independently arranged on the support body 11 and the sleeve body 14. Optionally, the first snap-fit ​​structure and the second snap-fit ​​structure can be independently a snap-fit ​​groove and a snap-fit ​​protrusion, respectively, and the snap-fit ​​structure is used for limiting and fixing; or, the first snap-fit ​​structure and the second snap-fit ​​structure are snap-fit ​​step structures that match and snap together, and further, threads are arranged on the contact side of the snap-fit ​​step structures to achieve limiting and fixing. Therefore, in the embodiment of the present invention, there is no specific requirement or special limitation on the connection mode between the support body 11 and the sleeve body 14, and it can be selected as a threaded connection or a snap-fit ​​connection, etc.

[0079] like Figure 4 As shown, the outer wall size of the support body 11 increases from top to bottom, and the spacer 16 is set against the outer wall of the support body 11. Optionally, the sleeve 14 and the support body 11 are split structures, and the spacer 16 and the sleeve 14 are integrated structures. During the assembly process, the sleeve 14 is sleeved along the support body 11, and the spacer 16 presses against the outer wall of the support body 11 to prevent it from sliding down. In the embodiment of the present invention, by setting the outer wall of the support body 11 to increase in size from top to bottom, during the process of the sleeve 14 sleeved on the support body 11, the spacer 16 can press against the outer wall of the support body 11 to prevent the spacer 16 and the sleeve 11 from sliding down, and can provide a guiding effect during the assembly process, so that the support body 11 can pass through the through hole of the electrode plate.

[0080] A coating device is also provided in an embodiment of the present invention, including the above-mentioned insulating support structure. Optionally, the insulating support structure can achieve a supporting insulation effect for the substrate during the coating process, for example, it can be a PECVD coating system.

[0081] The present invention also provides a deposition device 2, the deposition device 2 includes a housing, such as Figure 5 As shown, excitation electrode plates 21 and grounding electrode plates 22 are alternately arranged in the shell, and a deposition cavity is formed between the excitation electrode plates 21 and the grounding electrode plates 22. The excitation electrode plates 21 and / or the grounding electrode plates 22 are used to place substrates.

[0082] At least one support member is disposed between the excitation electrode plate 21 and the grounding electrode plate 22. Through holes are provided at the excitation electrode plate 21 and the grounding electrode plate 22. The support member includes at least one insulating support structure 1 as described above. Figure 6 and Figure 7 As shown, Figure 6 An insulating support structure is adopted in which one end of the support body protrudes from the sleeve, where a represents the height of the connecting gap. Figure 7 An insulating support structure is adopted in which both ends of the support body protrude from the sleeve, wherein a represents the height of the connecting gap, and the insulating support structure 1 is respectively arranged between the excitation electrode plate 21 and the grounding electrode plate 22, and the engaging protrusion 13 of the insulating support structure 1 passes through the through hole and is embedded in the engaging groove 12 of the adjacent insulating support structure 1.

[0083] Optionally, the excitation electrode plates 21 and the grounding electrode plates 22 can be arranged in a horizontal direction or in a vertical direction. In the horizontally arranged structure, a clamping member needs to be added to provide a fastening force between the insulating support structures 1. Preferably, the excitation electrode plates 21 and the grounding electrode plates 22 are arranged in a vertical direction, and the direct gravity of each component can be used to meet the fastening force, and a clamping member may be further added.

[0084] Optionally, the number and position of the support members can be reasonably set according to the area and number of the electrode plates. For example, the support members are respectively arranged at the four top corners of the electrode plate. Furthermore, support members can also be added in the central area of ​​the electrode plate.

[0085] Specifically, the height a of the connecting gap is 0.1 to 20 mm, preferably 0.5 to 2.5 mm. In the embodiment of the present invention, the height a of the connecting gap is 0.1 to 20 mm, more preferably 0.5 to 2.5 mm, to ensure the spacing distance between the sleeve 14 and the electrode plate, effectively avoid the deposition of a continuous film structure, and improve the insulation effect.

[0086] Specifically, an inlet gas distribution plate 23 is provided on the inlet side of the shell, and an outlet gas distribution plate 24 is provided on the outlet side of the shell. The raw gas is evenly distributed into each of the deposition chambers through the inlet gas distribution plate 23 and evenly discharged. In the embodiment of the present invention, by respectively providing gas distribution plates on the inlet side and the outlet side, the inlet and outlet gases are evenly distributed into each of the deposition chambers, respectively, to ensure that the raw gas in each deposition chamber is evenly dispersed.

[0087] Specifically, a hollow structure is provided on the excitation electrode plate 21 and / or the ground electrode plate 22. In the embodiment of the present invention, by providing a hollow structure on the electrode plate, the two side surfaces of the substrate are exposed to different deposition cavities respectively, so that double-sided deposition can be achieved during the deposition process, effectively improving the deposition efficiency.

[0088] Specifically, at least one side of the surface of the excitation electrode plate 21 and / or the grounding electrode plate 22 is passivated to form a passivation film, and the material of the passivation film includes at least one of silicon carbide, silicon nitride, silicon oxide or aluminum oxide. Preferably, the passivation treatment method includes oxidation treatment or deposition treatment, and the oxidation treatment includes anodizing treatment or heated oxidation treatment; the deposition treatment method includes PVD method or PECVD method. In the embodiment of the present invention, the electrode plate is passivated to make the surface of the electrode plate dense, smooth and wear-resistant, and the potential impurity problem of the metal electrode plate can be sealed to avoid arcing during discharge. Moreover, the electrode plate can be used as a substrate carrier, which is suitable for the requirements of low electrode spacing under RF power supply and high frequency power supply discharge conditions. If an additional substrate carrier is added, not only the contact between the substrate and the electrode plate is not good, but also the carrier affects the loading and unloading of the substrate and the stable discharge of gas between the electrode plates during deposition.

[0089] Specifically, in the embodiment of the present invention, the excitation electrode plate 21 is connected to an excitation power supply, and the grounding electrode plate 22 is connected to a grounding terminal, so as to ensure deposition in the deposition chamber. Furthermore, the access position of the excitation power supply is set at the edge side of the excitation electrode plate 21, located in the area shielded by the adjacent grounding electrode plates 22 on both sides, and the access position of the grounding terminal is set at the edge side of the grounding electrode plate 22, wherein the excitation electrode plate 21 can be connected in parallel to an excitation power supply, or independently connected to different excitation power supplies. The grounding electrode plate 22 can be connected in parallel to a grounding terminal, or independently connected to different grounding terminals. In order to further shield the electromagnetic crosstalk between the access points of different excitation power supplies, and at the same time form edge connectivity for adjacent deposition chambers that share an excitation power supply, so that the above-mentioned two adjacent deposition chambers can be synchronously ignited and discharged uniformly. Preferably, the excitation power supply includes at least one of a radio frequency power supply, a medium frequency power supply or a high frequency power supply.

[0090] Specifically, Figure 8 As shown, the planar size of the excitation electrode plate 21 is smaller than the planar size of the grounding electrode plate 22; the excitation electrode plate 21 and the grounding electrode plate 22 are coaxially arranged, the edges of the excitation electrode plate 21 and the edges of the grounding electrode plate 22 are staggered at a spacing of 3 to 60 mm, and the equivalent diameter of the through hole is 3 to 60 mm. Optionally, the shape of the through hole includes polygonal and circular.

[0091] In the embodiment of the present invention, the planar dimensions of the excitation electrode plate 21 and the grounding electrode plate 22 are controlled, that is, the edges of the electrode plate with a smaller size and the electrode plate with a larger size are staggered to form a connecting gap connecting the two deposition chambers. In addition, through holes on the electrode plates for setting the insulating support structure 1 can be used, and the ionized plasma can be dispersed to the adjacent deposition chambers through the connecting gap, so that the plasmas of the deposition chambers on both sides sharing the same excitation electrode plate 21 can be connected to each other, so that the ignition discharge is more stable and the deposition coating is more uniform.

[0092] An embodiment of the present invention further provides a deposition method using the above deposition device, comprising:

[0093] A silicon wafer is placed in each deposition chamber, heated and introduced with raw material gas, and the excitation electrode plate 21 and the grounding electrode plate 22 cooperate to ionize the raw material gas and deposit it on the surface of the silicon wafer.

[0094] An embodiment of the present invention provides a deposition device 2 as described above, and the deposition device 2 is used for preparing silicon wafer batteries.

[0095] Application Example 1

[0096] This application example provides a method for mass production of HJT monocrystalline silicon solar cells using the above deposition device, which specifically includes the following steps:

[0097] After the silicon wafer is wet cleaned and surface textured, it is loaded onto the excitation electrode plate or the ground electrode plate, the shell is evacuated, and the silicon wafer is heated to make the air pressure and temperature meet the deposition requirements, the temperature is 150-250°C, silane and hydrogen are introduced into the shell, and the excitation power supply is started. With the cooperation of the automatic impedance matcher, each pair of discharge electrodes can maximize the use of the power output of the power supply, stably discharge and ionize neutral gas molecules to start double-sided or single-sided deposition of an amorphous silicon passivation layer, for example, the deposition thickness is 5nm;

[0098] Taking n-type silicon wafer as an example, a microcrystalline silicon layer doped with phosphorus atoms in situ is deposited on the front side of the n-type silicon wafer, and a carbon source gas such as CH4 or CO2 can be introduced during the deposition to form a high-bandgap μc-SiC x and μc-SiO x , forming a μc-SiC x and / or μc-SiO x The microcrystalline silicon layer reduces the parasitic absorption of incident solar light by the carrier transport layer;

[0099] After the deposition on the front side of the n-type silicon wafer is completed, the wafer is turned over and a microcrystalline silicon layer doped with boron atoms is deposited on the back side of the n-type silicon wafer. During this process, TMB (trimethylborane) or CO2 containing carbon and oxygen atoms can be introduced to form a high bandgap μc-SiC x 、μc-SiO x, forming a μc-SiC x and / or μc-SiO x The microcrystalline silicon layer reduces the parasitic absorption of incident solar light by the carrier transport layer;

[0100] After the deposition on the back of the n-type silicon wafer is completed, TMA (trimethylaluminum) and DEZ (diethylzinc) are introduced, and AZO (nano zinc oxide ZnO doped Al2O3) is deposited on both sides or one side by PE-ALD or PECVD to form a TCO transparent conductive film;

[0101] Turn off the excitation power supply to discharge, evacuate the remaining gas in the shell, take out the deposited silicon wafer after cooling, and further prepare the electrode structure on the silicon wafer by screen printing or electroplating to obtain a battery cell;

[0102] Among them, double-sided deposition uses an excitation electrode plate or a grounding electrode plate with a hollow structure, and places the silicon wafer in the hollow structure position so that the two side surfaces of the silicon wafer are exposed in different deposition chambers for simultaneous deposition.

[0103] The insulating support structure 1 in the embodiment of the present invention adopts the structural cooperation of the interlocking groove 12 and the interlocking protrusion 13. During use, for the structure in which multiple electrode plates are stacked at intervals, the insulating support structure 1 is arranged between two adjacent electrode plates, and the interlocking groove 12 and the interlocking protrusion 13 of the two adjacent insulating support structures 1 are interlocked to achieve support for multiple electrode plates, thereby eliminating the insulating rod structure that passes through multiple electrode plates. Furthermore, the insulating support structures 1 between each electrode plate are independent structures, which are easy to disassemble, assemble and replace.

[0104] In addition, in the present invention, a sleeve 14 is arranged around the outer periphery of the support body 11, and an interlayer space 15 with a connecting gap is formed, so that the interlayer space 15 is connected with the external space of the sleeve 14. During the deposition process, even if a continuous film grows onto the insulating support structure, the two substrates cannot be connected due to the existence of the connecting gap and the interlayer space 15, thereby preventing the conductive film from causing leakage or short circuit between the electrode plates, affecting the long-term discharge stability of the electrode array.

[0105] In the embodiment of the present invention, the deposition device 2 adopts an insulating support structure 1 to insulate and support multiple excitation electrode plates 21 and multiple grounding electrode plates 22, which effectively avoids the formation of a continuous film structure due to deposition, causing short circuit or leakage between the electrode plates. Moreover, after the raw material gas is ionized, the plasma can flow through the through-hole gaps to the interface reaction zone of each electrode plate, thereby achieving the purpose of balanced discharge, making the deposited film more uniform, and realizing stable and large-scale deposition.

[0106] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A deposition device, characterized in that: The deposition device comprises a shell, in which excitation electrode plates and grounding electrode plates are alternately arranged, a deposition cavity is formed between the excitation electrode plates and the grounding electrode plates, and the excitation electrode plates and / or the grounding electrode plates are used to place substrates; At least one support member is provided between the excitation electrode plate and the grounding electrode plate, through holes are provided at the excitation electrode plate and the grounding electrode plate at the support member, the support member comprises at least one insulating support structure, the insulating support structures are respectively provided between the excitation electrode plate and the grounding electrode plate, the engaging protrusions of the insulating support structures pass through the through holes, and are embedded in the engaging grooves of the adjacent insulating support structures; The insulating support structure comprises a support body and a sleeve, wherein one support side of the support body is provided with an engaging groove, and the other support side is provided with an engaging protrusion; The sleeve is sleeved with the support body, a spacer is provided between the sleeve and the support body, the spacer is used to connect the sleeve and the support body, and an interlayer space with a connecting gap is formed between the sleeve and the support body, the connecting gap is used to connect the interlayer space with the external space of the sleeve; The height of the fitting protrusion is greater than the depth of the fitting groove.

2. The deposition device according to claim 1, characterized in that: In the supporting direction of the insulating support structure, at least one end of the supporting body and the sleeve body are staggered to form the connecting gap.

3. The deposition device according to claim 1, characterized in that: The support body and the sleeve are of a split structure, and a limiting structure is arranged between the support body and the sleeve, and the limiting structure is used to limit and fix the sleeve at a position on the support body.

4. The deposition device according to claim 1, characterized in that: The excitation electrode plate and / or the grounding electrode plate is provided with a hollow structure.

5. The deposition device according to claim 1, characterized in that: At least one side surface of the excitation electrode plate and / or the ground electrode plate is passivated to form a passivation film.

6. The deposition device according to claim 1, characterized in that: The plane size of the excitation electrode plate is smaller than the plane size of the ground electrode plate.

7. The deposition device according to claim 1, characterized in that: The deposition device is used for preparing silicon wafer batteries.

8. A coating device, characterized in that: The coating device comprises the insulating support structure in the deposition device according to any one of claims 1-7.

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