Light emitting diode, manufacturing method thereof and light emitting diode display panel

Abstract

The application provides a light emitting diode, a manufacturing method thereof and a light emitting diode display panel, and the light emitting diode comprises a substrate, a first epitaxial structure arranged on the substrate, wherein the first epitaxial structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer arranged in a stack, a first electrode connected with the first semiconductor layer, a second electrode connected with the second semiconductor layer, a first insulating layer arranged on the first epitaxial structure, a reflective layer arranged on the first insulating layer, and a second insulating layer arranged on the reflective layer, wherein the second insulating layer covers the reflective layer. The light emitting diode provided by the application can improve the process yield of the light emitting diode display panel.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor, in particular to a light emitting diode, a manufacturing method thereof and a light emitting diode display panel. BACKGROUND

[0002] The light emitting diode has the characteristics of low energy consumption and high luminous efficiency, and is widely used in various backlight or display panels to form a light emitting diode display panel.

[0003] A large number of light emitting diodes need to be arranged on a display backboard, and each light emitting diode forms a sub-pixel unit in a pixel unit. However, due to the problems of brightness, driving, cost of red light emitting diode and soldering process of the light emitting diode, the process yield of the display panel is affected. When the display panel is manufactured, the inverted light emitting diode needs to be soldered on the display backboard, and during soldering, the tin paste and flux are easy to penetrate into the light emitting diode, causing the leakage of the crystal grain and affecting the yield and reliability of the product packaging. SUMMARY

[0004] In view of the defects of the prior art, the present application provides a light emitting diode, a manufacturing method thereof and a light emitting diode display panel, which can prevent metal from penetrating into the light emitting diode, thereby reducing the occurrence of abnormalities and increasing the process yield of the display panel.

[0005] To achieve the above object and other objects, the present application provides a light emitting diode and a light emitting diode display panel, which comprises:

[0006] a substrate;

[0007] a first epitaxial structure arranged on the substrate, and the first epitaxial structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer arranged in layers;

[0008] a first insulating layer arranged on the first epitaxial structure;

[0009] a reflective layer arranged on the first insulating layer; and

[0010] a second insulating layer arranged on the reflective layer, and the second insulating layer covers the reflective layer;

[0011] a first electrode electrically connected with the first semiconductor layer;

[0012] a second electrode electrically connected with the second semiconductor layer, and the first electrode, the second electrode and the insulating layer are provided with an anti-penetration layer at the connection position.

[0013] In an embodiment of the present application, the first electrode and the second electrode comprise a connecting electrode, and the connecting electrode extends into the first insulating layer from the first semiconductor layer or the second semiconductor layer.

[0014] In an embodiment of the present application, the first electrode and the second electrode comprise a welding electrode, the welding electrode is connected to the connecting electrode, and extends out of the surface of the second insulating layer from the first insulating layer.

[0015] In an embodiment of the present application, the welding electrode comprises a contact layer, the contact layer is arranged on the connecting electrode, and extends into the reflecting layer from the first insulating layer.

[0016] In an embodiment of the present application, the welding electrode comprises an anti-permeation layer, the anti-permeation layer is arranged on the contact layer, and extends out of the surface of the second insulating layer from the anti-permeation layer.

[0017] In an embodiment of the present application, the anti-permeation layer comprises a first stack and a second stack arranged in a periodic stack.

[0018] In an embodiment of the present application, the welding electrode comprises a welding layer, the welding layer is arranged on the anti-permeation layer.

[0019] In an embodiment of the present application, the second semiconductor layer comprises a multi-layer scattering layer.

[0020] The present application also provides a manufacturing method of a light emitting diode, comprising the following steps:

[0021] providing a substrate;

[0022] forming a first epitaxial structure on the substrate, the first epitaxial structure comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer arranged in a stack;

[0023] forming a first electrode connected to the first semiconductor layer;

[0024] forming a second electrode connected to the second semiconductor layer;

[0025] forming a first insulating layer on the first epitaxial structure;

[0026] forming a reflecting layer on the first insulating layer; and

[0027] forming a second insulating layer on the reflecting layer, and the second insulating layer covers the reflecting layer.

[0028] The present application also provides a light emitting diode display panel comprising the light emitting diode as claimed in any one of the above.

[0029] In summary, the present application provides a light emitting diode, a manufacturing method thereof and a light emitting diode display panel, which can prevent external metal from penetrating, thereby reducing abnormality and increasing the process yield of the display. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 The schematic diagram of the light emitting diode structure in the present application.

[0031] Figure 2 The specific structure diagram of the first epitaxial structure in the present application.

[0032] Figure 3 The structure schematic diagram of forming the first epitaxial structure on the substrate in the present application.

[0033] Figure 4 The structure schematic diagram of forming the reflective layer and the insulating layer in the present application.

[0034] Figure 5 The structure schematic diagram of forming the soldering electrode in the present application.

[0035] Figure 6 The structure schematic diagram of the light emitting diode with the multi-layer insulating layer and the special electrode in the present application.

[0036] Figure 7 The structure schematic diagram of the soldering electrode in the present application.

[0037] Figure 8 The structure schematic diagram of the light emitting diode with the multi-layer reflective layer in the present application.

[0038] Figure 9 The structure schematic diagram of the light emitting diode with the special shape soldering electrode in the present application.

[0039] Figure 10 The structure schematic diagram of the light emitting diode with the special shape soldering electrode in the present application.

[0040] Figure 11 The structure schematic diagram of the light emitting diode with the special shape soldering electrode in the present application.

[0041] Figure 12 The structure schematic diagram of the light emitting diode with the obtuse angle in the present application.

[0042] Figure 13 The structure schematic diagram of the first angle, the second angle and the fourth angle in the present application.

[0043] Figure 14 The structure schematic diagram of the third angle in the present application.

[0044] Figure 15A schematic diagram of a light emitting diode structure with a brightness enhancement substrate in the present application.

[0045] Figure 16 A schematic diagram of a light emitting diode display panel in the present application. DETAILED DESCRIPTION

[0046] The present application is described in detail below with specific reference being made to particular embodiments. It is to be understood that the application is not limited to the specific embodiments described and as such can be practiced with modification and alteration by one skilled in the art without departing from the spirit and scope of the application. The description of the application is merely exemplary in nature and is in no way intended to limit the application, its application, or uses.

[0047] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0048] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "front", "back", "left", "right" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or component referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second" are only for the purpose of description and cannot be understood as indicating or implying relative importance.

[0049] The light emitting diode display panel has the advantages of long service life, high contrast, high resolution, fast response speed, wide viewing angle, rich color, super high brightness and low power consumption, and can be widely applied in various electronic devices. For example, it can be applied in a television, a notebook computer, a display, a mobile phone, a watch, a wearable display, a vehicle-mounted device, a virtual reality (VR) device, an augmented reality (AR) device, a portable electronic device, a game console or other electronic devices.

[0050] Please refer to Figure 16As shown, the light-emitting diode display panel comprises a driving backplate 201 and pixel units arranged on the driving backplate 201. The driving backplate 201 is provided with a driving circuit. When the light-emitting diode 10 is bonded on the driving backplate 201, the driving circuit on the driving backplate is electrically connected to the light-emitting diode 10 to control the on and off of the light-emitting diode 10. The driving circuit is, for example, a thin film transistor (TFT) circuit. Each pixel unit comprises a plurality of sub-pixels, and each pixel unit comprises, for example, one red sub-pixel, one green sub-pixel and one blue sub-pixel. The driving circuit controls each sub-pixel to emit light independently, then forms a mixed color and finally makes the pixel unit emit a preset color light. The light-emitting pixel array formed by a plurality of pixel units can realize the color display effect of the display panel. In some embodiments, the light-emitting unit comprises a plurality of light-emitting diodes 10 of different colors, for example, red light-emitting diodes, green light-emitting diodes and blue light-emitting diodes. Each light-emitting diode 10 corresponds to a sub-pixel.

[0051] In some embodiments, an encapsulation layer 202 is arranged on the pixel unit, covering the light-emitting unit and filling the gap between adjacent pixel units.

[0052] In some embodiments, the light-emitting diode is a mini light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED).

[0053] Please refer to Figure 1 In an embodiment of the present application, the light-emitting diode comprises a substrate 100 and a first epitaxial structure arranged on a first surface of the substrate 100. In the present application, the substrate 100 can be a silicon substrate or a sapphire substrate. In the present application, the substrate 100 is a transparent substrate. The first epitaxial structure comprises a first semiconductor layer 101, a light-emitting layer 102 and a second semiconductor layer 103 arranged in layers. The first semiconductor layer 101 and the second semiconductor layer 103 are semiconductor layers of different types, one of which is a P-type semiconductor layer and the other is an N-type semiconductor layer. In the P-type semiconductor layer, holes are provided for the light-emitting layer 102, and in the N-type semiconductor layer, electrons are provided for the light-emitting layer 102. When a voltage is applied to the first semiconductor layer 101 and the second semiconductor layer 103, the holes in the P-type semiconductor layer and the photons in the N-type semiconductor layer recombine in the light-emitting layer 102, then emit energy in the form of photons, and then the first epitaxial structure emits light.

[0054] In the present application, the specific type of the first semiconductor layer 101 and the second semiconductor layer 103 is not limited. In the present embodiment, the first semiconductor layer 101 is an N-type semiconductor layer, and the second semiconductor layer 103 is a P-type semiconductor layer. In other embodiments, the first semiconductor layer 101 is a P-type semiconductor layer, and the second semiconductor layer 103 is an N-type semiconductor layer. In some embodiments, in order to improve the display efficiency of the light emitting diode, a plurality of other functional layers are arranged in the first epitaxial structure to reduce the defects of the semiconductor layers and improve the brightness of the first epitaxial structure.

[0055] Specifically, please refer to Figure 2 shown in the figure, Figure 2 is a specific structural diagram of the first epitaxial structure in the present application. In an embodiment of the present application, a buffer layer 1001 is further arranged on the substrate 100. The buffer layer 1001 is, for example, an aluminum nitride layer or an aluminum gallium nitride layer. The buffer layer 1001 is arranged to improve the lattice defects between the substrate 100 and the gallium nitride layer.

[0056] Please refer to Figure 2 shown in the figure, in an embodiment of the present application, a layer of undoped gallium nitride layer 1111 is arranged on the buffer layer 1001. Specifically, under the condition that the temperature is, for example, 1000-1200°C, and for example, 1050°C-1200°C, and the pressure in the reaction chamber is, for example, 100Torr-500Torr, and for example, 200Torr-500Torr, ammonia and trimethyl gallium (TMGa) are introduced into the reaction chamber, and then a layer of gallium nitride with a thickness of, for example, 100-1000nm, and for example, 200-500nm, is grown on the buffer layer 1001 to form the undoped gallium nitride layer 1111. By arranging the buffer layer 1001 and the undoped gallium nitride layer 1111 between the substrate 100 and the first semiconductor layer 101, the lattice mismatching problem between the substrate 100 and the first semiconductor layer 101 can be alleviated, and the quality of the first epitaxial structure can be improved.

[0057] Please refer to Figure 2 shown in the figure, in an embodiment of the present application, the first semiconductor layer 101 is arranged on the undoped gallium nitride layer 1111, and the first semiconductor layer 101 is an N-type semiconductor layer with more electrons. The first semiconductor layer 101 is doped with a donor impurity, such as silicon (Si) or tellurium (Te) elements. In the present embodiment, the first semiconductor layer 101 is an N-type gallium nitride (GaN) layer. In other embodiments, the first semiconductor layer 101 can be an N-type gallium arsenide (GaAs) layer or a gallium phosphide (GaP) layer.

[0058] Please refer to Figure 2 ​In the present application, the light-emitting layer 102 can be a quantum well light-emitting layer 102, or an intrinsic semiconductor layer or a low-doped semiconductor layer. In the present embodiment, the light-emitting layer 102 includes periodically stacked potential well layers and potential barrier layers. The material of the potential barrier layer includes, for example, a GaN / AlGaN superlattice structure, and the material of the potential well layer is, for example, InGaN. The thickness of the light-emitting layer 102 is, for example, 200-300 nm, the thickness of the potential well layer of each period is, for example, 3-4 nm, and the thickness of the potential barrier layer of each period is, for example, 12-16 nm. The thickness of the GaN in the potential barrier layer is, for example, 1.5-3 nm, and the thickness of the AlGaN in the potential barrier layer is, for example, 1.5-3 nm. The light-emitting layer 102 in the present embodiment adopts a modulated-doped GaN / AlGaN superlattice structure, which can effectively guide the impact current, so that the pulse current is conducted in the lateral direction in the two-dimensional electron gas of the GaN / AlGaN structure, the density distribution of the pulse current is more uniform, and the recombination efficiency of the electrons and holes can be effectively improved.

[0059] Referring to Figure 2 In an embodiment of the present application, a superlattice buffer layer 1112 is further arranged between the first semiconductor layer 101 and the light-emitting layer 102. The superlattice buffer layer 1112 includes, for example, periodically stacked InGaN and GaN layers. The superlattice buffer layer 1112 is doped with silicon (Si), which can reduce the lattice difference between the undoped gallium nitride layer 1111 and the light-emitting layer 102, so that the quantum well light-emitting layer 102 can be better grown.

[0060] Referring to Figure 2 In an embodiment of the present application, a supermountain layer 1113 is further arranged on the light-emitting layer 102. In the present application, the supermountain layer 1113 is an undoped gallium nitride layer 1111. The supermountain layer 1113 in the present application is arranged between the light-emitting layer 102 and the second semiconductor layer 103, which can protect the light-emitting layer 102 from the interference of the second semiconductor layer 103.

[0061] Referring to Figure 2 In an embodiment of the present application, the second semiconductor layer 103 is arranged on the supermountain layer 1113, and the second semiconductor layer 103 is a P-type semiconductor layer with a large number of holes. The second semiconductor layer 103 is doped with an acceptor impurity, for example, magnesium (Mg) or zinc (Zn) elements. In the present embodiment, the second semiconductor layer 103 can be a P-type gallium nitride (GaN) layer. In other embodiments, the second semiconductor layer 103 can be a P-type gallium arsenide (GaAs) layer or a P-type gallium phosphide (GaP) layer.

[0062] Referring to Figure 2As shown, in an embodiment of the present application, at least two scattering layers are provided in the second semiconductor layer 103, and the second semiconductor layer 103 is divided into at least two sub semiconductor layers. In the present application, for example, three scattering layers are provided, and specifically include a first scattering layer 1114, a second scattering layer 1115, and a third scattering layer 1116. The first scattering layer 1114 and the second scattering layer 1115 divide the second semiconductor layer 103 into a first sub semiconductor layer 1031 and a second sub semiconductor layer 1032. The first scattering layer 1114 is located on the mesa layer 1113, the first sub semiconductor layer 1031 is located on the first scattering layer 1114, the second sub semiconductor layer 1032 is located on the second scattering layer 1115, and the third scattering layer 1116 is located on the second sub semiconductor layer 1032.

[0063] As shown in FIG. 2, in an embodiment of the present application, the first scattering layer 1114 is an aluminum nitride layer, specifically Al x Ga 1- x N, where x is in the range of 0.1-0.2. The first scattering layer 1114 is doped with Mg ions, and the doping concentration of the Mg ions is 1x10E 19 atom / cm 3 -9x10E 19 atom / cm 3 . The thickness of the first scattering layer 1114 is and the first scattering layer 1114 can be deposited using a metal-organic chemical vapor deposition (MOCVD) method. Specifically, during the reaction, nitrogen and ammonia can be introduced into the reaction chamber under conditions such as a temperature of 700-800°C and a pressure of 150-200 Torr, and the ratio of the gases is, for example, N2:NH3=1:1, to form the first scattering layer 1114. The first sub semiconductor layer 1031 is located on the first scattering layer 1114, and the first sub semiconductor layer 1031 is a P-type gallium nitride layer.

[0064] As shown in FIG. 2, in an embodiment of the present application, the second scattering layer 1115 is an aluminum nitride layer, specifically Al y Ga 1- y N, where y is in the range of 0.15-0.25. The second scattering layer 1115 is doped with Mg ions, and the doping concentration of the Mg ions is 1x10E 19 atom / cm 3 -9x10E 19 atom / cm 3 . The thickness of the second scattering layer 1115 is The second scattering layer 1115 can be deposited using metal-organic chemical vapor deposition (MOCVD). Specifically, during the reaction, nitrogen and ammonia are introduced into the reaction chamber at a temperature of, for example, 890°C to 940°C and a pressure of, for example, 100 Torr to 150 Torr, with a gas ratio of, for example, N2:NH3 = 5:1, to form the second scattering layer 1115. A second sub-semiconductor layer 1032 is located on the second scattering layer 1115, and the second sub-semiconductor layer 1032 is a p-type gallium nitride layer.

[0065] Please refer to Figure 2. In one embodiment of this application, the third scattering layer 1116 is located on the second sub-semiconductor layer 1032, and the third scattering layer 1116 is the contact layer. Specifically, the third scattering layer 1116 is Al. z Ga 1-z N, where z ranges from 0.1 to 0.2. The third scattering layer 1116 is doped with Mg ions, and the doping concentration of Mg ions is 1×10E. 20 atom / cm 3 ~9×10E 20 atom / cm 3 The thickness of the third scattering layer 1116 is Furthermore, the third scattering layer 1116 can be deposited using metal-organic chemical vapor deposition (MOCVD). Specifically, nitrogen, hydrogen, and ammonia can be introduced into the reaction chamber at a temperature of, for example, 980°C to 1030°C and a pressure of, for example, 200 Torr to 600 Torr, with the ratio of each gas being, for example, N2:H2:NH3 = 1:2:1, to form the third scattering layer 1116.

[0066] Please see Figure 2 As shown, in one embodiment of this application, aluminum has an oscillatory transmission effect on visible light, which can reduce the absorption of light by magnesium ions, and therefore can be used as a light transporter. The light-collecting channel formed in the scattering layer allows the light in the light-emitting layer 102 to be projected out, and the third scattering layer 1116 disposed at the top can spread the current on the surface of the second semiconductor layer 103 to achieve the requirement of high luminous efficiency.

[0067] Please see Figure 1As shown in the embodiment of the present application, the transparent conductive layer 104 is arranged on the surface of the second semiconductor layer 103. The transparent conductive layer 104 can be formed by evaporating or sputtering metal oxide or alloy oxide on the second semiconductor layer 103. Specifically, the transparent conductive layer 104 can be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or azo (AzO), and can also be oxide of alloy such as nickel gold (NiAu) or ruthenium gold (RuAu). The thickness of the transparent conductive layer 104 is, for example, 5 nm to 300 nm. When the electrode is in contact with the transparent conductive layer 104, good conductive effect can be achieved.

[0068] As shown in Figure 1 and Figure 3 In the present application, the transparent conductive layer 104 covers part of the second semiconductor layer 103 and exposes part of the second semiconductor layer 103, forming a step 1041. In the present application, a groove 1010 is also arranged on the periphery of the first epitaxial structure. In the process of forming the light emitting diode, the periphery of the first epitaxial structure can be etched to form the groove 1010. The bottom of the groove 1010 is in contact with the substrate 100.

[0069] As shown in Figure 4 and Figure 5 In the embodiment of the present application, a first electrode electrically connected to the first semiconductor layer 101 and a second electrode electrically connected to the second semiconductor layer 103 are also arranged. In the embodiment, the first electrode includes a first connecting electrode 1091 connected to the first semiconductor layer 101, and the second electrode includes a second connecting electrode 1092 connected to the second semiconductor layer 103. The first connecting electrode 1091 is arranged on the second semiconductor layer 103 and extends into the first semiconductor layer 101 and is connected to the first semiconductor layer 101. The second connecting electrode 1092 is arranged on the transparent conductive layer 104 and is connected to the transparent conductive layer 104. The first connecting electrode 1091 and the second connecting electrode 1092 can be made of metal or alloy with good conductive performance. The first connecting electrode 1091 is made of, for example, Ni, Au or alloy thereof. The second connecting electrode 1092 is made of, for example, Ti, Al, Ni, Au or alloy of two or more thereof.

[0070] As shown in Figure 1 , Figure 4 and Figure 5 On the first epitaxial structure, a reflective layer 107 and an insulating layer 108 are arranged. The present application does not limit the specific structure and deposition sequence of the reflective layer 107 and the insulating layer 108, and the reflective layer 107 and the insulating layer 108 can only achieve the reflection of light on the first epitaxial structure and the protection of the internal structure of the light emitting diode.

[0071] As shown in Figure 1In an embodiment of the present application, the reflective layer 107 is disposed on the first epitaxial structure, and the insulating layer 108 is disposed on the reflective layer 107 and extends to and fills the recess 1010. The reflective layer 107 can reflect light toward the second semiconductor layer 103 and emit light toward the first semiconductor layer 101. Specifically, the reflective layer 107 can be a Distributed Bragg Reflection (DBR) reflective layer 107, a silver reflective layer 107, or an aluminum reflective layer 107. The thickness of the reflective layer 107 is, for example, 300 nm to 5000 nm.

[0072] Referring to Figure 1 In an embodiment of the present application, the insulating layer 108 can be made of silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiNx), magnesium fluoride (MgF), or zinc oxide (ZnO). The thickness of the insulating layer 108 on the first epitaxial structure is, for example, 100 nm to 600 nm. A thicker insulating layer can prevent damage to the light-emitting diode during soldering and prevent the penetration of solder.

[0073] Referring to Figure 1 In the present application, the first electrode further includes a first solder electrode 1101, and the second electrode further includes a second solder electrode 1102. The first solder electrode 1101 is connected to the first connecting electrode 1091, and the second solder electrode 1102 is connected to the second connecting electrode 1092.

[0074] Referring to Figure 1 In an embodiment of the present application, the first connecting electrode 1091 and the second connecting electrode 1092 are covered in the insulating layer 108, and the first solder electrode 1101 extends out of the insulating layer 108. The second solder electrode 1102 also extends out of the insulating layer 108. In other embodiments, the first connecting electrode 1091 and the second connecting electrode 1092 extend out of the insulating layer 108, and the first solder electrode 1101 and the second solder electrode 1102 are disposed on the surface of the insulating layer 108. The first solder electrode 1101 and the second solder electrode 1102 can include a plurality of metal layers, such as one, two, or more of a chromium (Cr) metal layer, a titanium (Ti) metal layer, an aluminum (AL) metal layer, a platinum (Pt) metal layer, a nickel (Ni) metal layer, a gold (Au) metal layer, and a tin (Sn) metal layer. The thickness of the first solder electrode 1101 and the second solder electrode 1102 is, for example, 1 um to 50 um.

[0075] Referring to Figure 1As shown, in some embodiments of this application, in a light-emitting diode display panel, a second epitaxial structure 111 is provided on the second surface of the substrate 100 of a portion of the light-emitting diodes to convert the light from the light-emitting diodes into light of other colors. The first surface and the second surface are two opposing surfaces of the substrate 100.

[0076] Please see Figure 1 As shown, in some embodiments of this application, a second epitaxial structure 111 is formed on the surface of the substrate 100 away from the first epitaxial structure, and the second epitaxial structure 111 is bonded to the surface of the transparent conductive layer 104, for example, through a bonding layer 105. The bonding layer 105 can be a transparent adhesive layer, specifically made of materials such as silicon dioxide (SiO2), silicon nitride (SiNx), titanium dioxide (TiO2), titanium pentoxide (Ti2O5), magnesium fluoride (MgF), aluminum nitride (AlN), and aluminum oxide (Al2O3). In this embodiment, the thickness of the bonding layer 105 is 1µm to 500µm. For different materials, it can be formed by methods such as evaporation, sputtering, or plasma-enhanced chemical vapor deposition (PECVD), depending on the material used.

[0077] Please see Figure 1In an embodiment of the present application, the second epitaxial structure 111 covers the second surface of the substrate 100, the semiconductor structure in the second epitaxial structure 111 is different from that in the first epitaxial structure, and the first epitaxial structure and the second epitaxial structure emit light in different wave bands. The light emitted by the first epitaxial structure can be converted into light of other colors. The material of the second epitaxial structure 111 is set to be a group III-V element compound. Specifically, when it is required to convert the light emitted by the light-emitting diode into red light, the second epitaxial structure 111 is made of materials such as gallium arsenide (GaAs) or aluminum gallium arsenide (AlGaAs), etc. to convert the light emitted by the first epitaxial structure into red light. In other embodiments, the second epitaxial structure 111 can be made of materials such as indium gallium arsenide (InGaAs), indium gallium phosphide (InGaP), gallium phosphide (GaP), gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium phosphide (InP), indium nitride (InN), or indium gallium nitride (InGaN), etc. In one aspect, the second epitaxial structure 111 can convert the light emitted by the light-emitting diode into light of other colors. When the light emitted by the first epitaxial structure irradiates on the second epitaxial structure 111, the second epitaxial structure 111 can emit light, and the color of the light emitted by the second epitaxial structure 111 is determined by the material of the second epitaxial structure 111. In another aspect, the second epitaxial structure 111 can withstand high temperature and protect the inside of the light-emitting diode. In an embodiment, the wave band of the light emitted by the second epitaxial structure 111 is 600 nm to 800 nm.

[0078] Referring to Figure 1 In an embodiment of the present application, the second epitaxial structure 111 can be bonded to the substrate 100 under the conditions of a temperature of, for example, 150 °C to 300 °C and a pressure of 1000 kg to 5000 kg for 30 min to 300 min.

[0079] Referring to Figure 1 In the present application, after the light emitted by the first epitaxial structure is converted by the second epitaxial structure 111, in the light-emitting diode display panel, in one pixel unit, a first epitaxial structure emitting blue light is arranged to form a blue light-emitting diode as a blue sub-pixel, and a first epitaxial structure emitting green light is arranged to form a green light-emitting diode as a green sub-pixel. In the light-emitting diode forming a red sub-pixel, a first epitaxial structure emitting blue light or green light is arranged, and a second epitaxial structure is further arranged on the substrate. The second epitaxial structure converts the light emitted by the first epitaxial structure into red light to form a red sub-pixel. When the first epitaxial structure is all an epitaxial structure emitting blue light or green light, the driving voltage of each light-emitting diode can remain the same, and the structure of the driving circuit is simplified. Moreover, the red light-emitting diode made of a red epitaxial structure is relatively expensive, and the use of the second epitaxial structure can reduce the cost of the display panel.

[0080] Please see Figure 1 As shown, in one embodiment of this application, a light-shielding layer 112 is further disposed around the substrate 100, surrounding the substrate 100 and covering the side surface of the substrate 100. The thickness of the light-shielding layer 112 is, for example, 100 nm to 100 nm. The light-shielding layer 112 is an opaque white anti-permeability layer, a black anti-permeability layer, or a high-reflectivity layer. The white anti-permeability layer can be made of zirconium oxide, and the black anti-permeability layer can be made of resin doped with black powder. The light-shielding layer 112 can cover or reflect the original light color of the first epitaxial structure, preventing the light emitted by the first epitaxial structure from mixing with the light emitted by the second epitaxial structure 111.

[0081] Please see Figure 1 As shown in this application, when forming the light-emitting diode, a first semiconductor layer 101, a light-emitting layer 102, a second semiconductor layer 103, and other functional layers, i.e., the first epitaxial structure, can be sequentially formed on one side of the substrate 100. Then, a transparent conductive layer 104 is formed on the second semiconductor layer 103, exposing a portion of the second semiconductor layer 103. Next, the first epitaxial structure is etched to form a groove 1041. A first connection electrode 1091, connected to the first semiconductor layer 101, is formed on the second semiconductor layer 103, and a second connection electrode 1092 is formed on the transparent conductive layer 104. Next, a reflective layer 107 is formed sequentially on the second semiconductor layer 103 and the transparent conductive layer 104. Then, an insulating layer 108 is deposited or sputtered on the reflective layer 107 and in the groove 1041, and the insulating layer 108 and the reflective layer 107 are etched to form contact holes exposing the first connection electrode 1091 and the second connection electrode 1092. The first welding electrode 1101 and the second welding electrode 1102 are then deposited sequentially in the contact holes. Afterward, a second epitaxial structure 111 is bonded on the other side of the substrate 100 using a bonding layer 105, and a light-shielding layer 112 is deposited or sputtered on the outer sidewall of the substrate 100.

[0082] Please see Figure 1 to Figure 5 As shown in some embodiments of this application, multiple insulating layers are provided to ensure that solder does not penetrate into the interior of the light-emitting diode during soldering. Furthermore, an anti-penetration layer is provided in the electrode at the top insulating layer to further prevent solder penetration.

[0083] For details, please refer to Figure 6 to Figure 7As shown in the embodiment of the present application, the first insulating layer 1081, the reflective layer 107 and the second insulating layer 1082 are sequentially arranged on the first epitaxial structure. The first insulating layer 1081 covers the surface of the first epitaxial structure and covers the transparent conductive layer 104. The reflective layer 107 is arranged on the first insulating layer 1081 and extends towards the groove 1010 and covers the sidewall and part of the bottom wall of the groove 1010. The second insulating layer 1082 is arranged on the reflective layer 107 and extends towards the groove 1010 and covers the reflective layer 107 in the groove 1010 and part of the bottom wall. Meanwhile, the reflective layer 107 and the second insulating layer 1082 fill the groove 1010. In the present application, the light emitting side of the light emitting diode is the side where the substrate 100 is located, and the reflective layer 107 realizes full coverage except the light emitting side, which can maximize the brightness of the light emitting diode.

[0084] Referring to Figure 6 As shown in the embodiment of the present application, the first insulating layer 1081 and the second insulating layer 1082 can be made of the same material. In some embodiments, the first insulating layer 1081 and the second insulating layer 1082 can be made of silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiNx), magnesium fluoride (MgF), or zinc oxide (ZnO), etc. The thickness of the first insulating layer 1081 and the second insulating layer 1082 is, for example, 100nm-600nm. The formation of two thick insulating layers can prevent damage to the inside of the light emitting diode during soldering and prevent the penetration of solder. The reflective layer 107 includes periodic silicon oxide (SiO2) layers and titanium oxide (TiO x ) layers. The thickness of the reflective layer 107 is, for example, 50nm-200nm, and the thickness of the reflective layer 107 can be set according to the requirements of the reflected wave band. The number of repeated cycles of the silicon oxide layer and the titanium oxide layer in the reflective layer 107 is, for example, 1-50, and can be set according to the process conditions.

[0085] Referring to Figure 6As shown, in one embodiment of this application, the first electrode further includes a first welding electrode 1101, and the second electrode further includes a second welding electrode 1102. The first welding electrode 1101 is connected to the first connecting electrode 1091, and the second welding electrode 1102 is connected to the second connecting electrode 1092. The first connecting electrode 1091 and the second connecting electrode 1092 are encapsulated within a first insulating layer 1081. When forming the first welding electrode 1101 and the second welding electrode 1102, the second insulating layer 1082, the reflective layer 107, and the first insulating layer 1081 are first etched to form contact holes exposing the first connecting electrode 1091 and the second connecting electrode 1092. Conductive material is then deposited within the contact holes to form the first welding electrode 1101 and the second welding electrode 1102. In this application, the radial dimensions of the first welding electrode 1101 and the second welding electrode 1102 are larger than the radial dimensions of the first connecting electrode 1091 and the second connecting electrode 1092.

[0086] Please see Figure 6 and Figure 6 As shown, in one embodiment of this application, the first welding electrode 1101 and the second welding electrode 1102 include a contact layer 1103, an anti-permeability layer 1104, and a welding layer 1105. The contact layer 1103 is disposed on the first connecting electrode 1091 and the second connecting electrode 1092, and extends into the reflective layer 107. The anti-permeability layer 1104 is disposed on the contact layer 1103, extends from the reflective layer 107 into the second insulating layer 1082, and is higher than the second insulating layer 1082. The welding layer 1105 is disposed on the anti-permeability layer 1104.

[0087] Please see Figure 7 and Figure 6 As shown, in one embodiment of this application, the contact layer 1103 is made of a metallic material such as chromium (Cr), titanium (Ti), or nickel (Ni). Furthermore, in this application, the contact layer 1103 extends into the reflective layer 107 but does not extend beyond it.

[0088] Please see Figure 7 and Figure 6In an embodiment of the present application, the anti-permeation layer 1104 includes periodically stacked first and second layers, wherein the first layer is a titanium metal layer and the second layer is an aluminum metal layer. The thickness of the first layer is, for example, 50-200 nm, the thickness of the second layer is, for example, 100-300 nm, and the number of repetitions of the first and second layers is, for example, 3-8. In the present application, the anti-permeation layer 1104 extends out of the second insulating layer 1082, and the surface of the anti-permeation layer 1104 that is stacked and arranged with the second insulating layer 1082. The stacked anti-permeation layer 1104 can increase the reliability of the electrode, while preventing the entry of solder. A stable metal-solder paste bonding interface can be formed on the anti-permeation layer 1104 and the second insulating layer 1082.

[0089] Referring to Figure 7 and Figure 6 In an embodiment of the present application, the solder layer 1105 is made of nickel (Ni), tin (Sn), silver (Ag), copper (Cu), germanium (Ge), gold (Au), or an alloy of two or more of these. In the present application, the solder layer 1105 is arranged on the anti-permeation layer 1104, and the thickness of the solder layer 1105 is, for example, 300-5000 nm.

[0090] Referring to Figure 7 and Figure 6 In an embodiment of the present application, when forming the light emitting diode, after forming the first and second connection electrodes 1091 and 1092, the first insulating layer 1081 is evaporated or sputtered on the second semiconductor layer 103 and the transparent conductive layer 104, the reflective layer 107 is evaporated on the first insulating layer 1081 and in the groove 1041, and the second insulating layer 1082 is evaporated or sputtered on the reflective layer 107. Then, the second insulating layer 1082, the reflective layer 107, and part of the first insulating layer 1081 are etched to form contact holes that expose the first and second connection electrodes 1091 and 1092, and the contact layer 1103, the anti-permeation layer 1104, and the solder layer 1105 are sequentially evaporated in the contact holes to form the first and second solder electrodes 1101 and 1102.

[0091] Referring to Figure 7 In some embodiments, a special reflective layer can be arranged to reflect light of a predetermined wavelength, and a specially shaped electrode can be arranged to facilitate soldering of the light emitting diode.

[0092] In particular, referring to Figure 8 to Figure 11In an embodiment of the present application, a plurality of reflective layers can be disposed on the insulating layer 108, and a barrier layer 1072 is disposed between adjacent reflective layers. Specifically, in an embodiment of the present application, on the first epitaxial structure, the insulating layer 108, the first reflective layer 1071, the barrier layer 1072 and the second reflective layer 1073 are sequentially disposed. The insulating layer 108 covers the surface of the first epitaxial structure and covers the transparent conductive layer 104. The insulating layer 108 also extends towards the groove 1010 and fills the groove 1010. The first reflective layer 1071 is disposed on the insulating layer 108, the barrier layer 1072 is disposed on the first reflective layer 1071, and the second reflective layer 1073 is disposed on the barrier layer 1072. In the present application, the light emitting side of the light emitting diode is the side on which the substrate 100 is located, and the plurality of reflective layers are disposed on the side of the light emitting diode on which the electrode is disposed, which can increase the brightness of the light emitting diode.

[0093] Referring to Figure 8 In an embodiment of the present application, the insulating layer 108 can be made of silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiNx), magnesium fluoride (MgF2), or zinc oxide (ZnO), etc. The thickness of the insulating layer 108 is, for example, 100 nm to 600 nm. Forming a thicker insulating layer can prevent damage to the inside of the light emitting diode during soldering and prevent the penetration of solder.

[0094] Referring to Figure 8 In an embodiment of the present application, the first reflective layer 1071 is disposed on the insulating layer 108, and the material of the first reflective layer 1071 is a composite layer of titanium dioxide (TiO2), titanium pentoxide (Ti2O5), silicon dioxide (SiO2), silicon nitride (SiNx), aluminum oxide (Al2O3) and magnesium fluoride (MgF2). The thickness of the first reflective layer 1071 is 0.5 nm to 5 nm, which can reflect red light with a wavelength of 400 nm to 700 nm.

[0095] Referring to Figure 8 In an embodiment of the present application, the barrier layer 1072 is disposed on the first reflective layer 1071, and the material of the barrier layer 1072 is one of silicon dioxide (SiO2), silicon nitride (SiNx) or aluminum oxide (Al2O3), or a composite layer of two or more of the above materials. The thickness of the barrier layer 1072 is 0.5 um to 1 um.

[0096] Referring to Figure 8In an embodiment of the present application, the second reflective layer 1073 is disposed on the barrier layer 1072, and the material of the second reflective layer 1073 is a composite layer of titanium dioxide (TiO2), titanium pentoxide (Ti2O5), silicon dioxide (SiO2), silicon nitride (SiNx), aluminum oxide (Al2O3), and magnesium fluoride (MgF2). The thickness of the second reflective layer 1073 is 0.5 nm to 5 nm, and the infrared light with a wavelength of 700 nm to 1300 nm can be reflected.

[0097] In the present application, the reflective layer can reflect a specific wavelength. In some embodiments, the reflective layer can reflect red light and infrared light, for example. The multilayer reflective layer is disposed on a red light emitting diode. In other embodiments, the material and thickness of the reflective layer can be flexibly set according to the wavelength of the light to be reflected.

[0098] In some embodiments, the multilayer reflective layer can also be disposed, and the barrier layer is disposed between every two reflective layers. The present application does not limit the specific number of reflective layers, which can be set according to the requirements. The reflective layer can be a distributed Bragg reflector. The thickness of each material layer in each reflective layer is adjusted, so that the reflection of light with different wavelengths can be achieved.

[0099] Please refer to Figure 8 In some embodiments, the first connecting electrode 1091 and the second connecting electrode 1092 are covered in the insulating layer 108, and the first solder electrode 1101 extends out of the multilayer reflective layer from the insulating layer 108. The second solder electrode 1102 also extends out of the multilayer reflective layer from the insulating layer 108. In other embodiments, the first connecting electrode 1091 and the second connecting electrode 1092 extend to the surface of the multilayer reflective layer from the insulating layer 108. The first solder electrode 1101 and the second solder electrode 1102 are disposed on the surface of the reflective layer.

[0100] Please refer to Figure 8 In some embodiments, the first connecting electrode 1091 and the second connecting electrode 1092 are covered in the insulating layer 108, and the first solder electrode 1101 and the second solder electrode 1102 also extend out of the multilayer reflective layer from the insulating layer 108. The first solder electrode 1101 and the second solder electrode 1102 are disposed in a rectangular shape.

[0101] Please refer to Figure 8 In some embodiments, as shown in Figure 8 to Figure 11As shown, the first connecting electrode 1091 and the second connecting electrode 1092 extend to the surface of the multi-layered reflective layer by the insulating layer 108. The first welding electrode 1101 and the second welding electrode 1102 are disposed on the surface of the reflective layer. The radial dimension of the first welding electrode 1101 and the second welding electrode 1102 on the side close to the reflective layer is greater than the radial dimension of the first welding electrode 1101 and the second welding electrode 1102 on the side away from the reflective layer. The first welding electrode 1101 and the second welding electrode 1102 are disposed in a rectangular shape on the side close to the reflective layer and in a trapezoidal shape on the side away from the reflective layer. In other embodiments, as shown in Figure 8 and Figure 9 the first welding electrode 1101 and the second welding electrode 1102 are disposed on the surface of the reflective layer. The radial dimension of the first welding electrode 1101 and the second welding electrode 1102 gradually increases from the side close to the reflective layer to the side away from the reflective layer. The first welding electrode 1101 and the second welding electrode 1102 are disposed in a trapezoidal shape, which can be an isosceles trapezoidal shape or a right trapezoidal shape. In other embodiments, the first welding electrode 1101 and the second welding electrode 1102 can also be disposed in other arbitrary polygonal shapes, as long as the radial dimension of the first welding electrode 1101 and the second welding electrode 1102 gradually increases from the side close to the reflective layer to the side away from the reflective layer.

[0102] In the present application, the insulating layer and the insulating layer can be disposed on the light emitting diode according to the specific requirements of the light emitting diode, and the electrodes of different shapes or materials can be disposed according to the welding requirements.

[0103] In some embodiments, in order to ensure that the insulating layer and the reflective layer do not crack during deposition, the corners inside the light emitting diode can also be disposed as obtuse angles.

[0104] Please refer to Figure 11 and Figure 12 In the present application, the bottom of the step 1041 is extended to contact the first semiconductor layer 101 on one side of the first epitaxial structure to ensure the smoothness of the insulating layer and the reflective layer. The step 1041 is obtained by etching the second semiconductor layer 103 and the light emitting layer 102 on one side of the first epitaxial structure. In the present application, the corners of the step 1041 are disposed at a first angle A1, which is an obtuse angle, and the range of the first angle A1 is, for example, 115°-160°.

[0105] Please refer to Figure 13 and Figure 12In some embodiments, the transparent conductive layer 104 is disposed at a second angle A2 with the surface of the first epitaxial structure, the second angle A2 is an obtuse angle, and the second angle A2 is greater than, for example, 135°. In the present application, the first angle A1 can be set equal to the second angle A2, which can further reduce the bending of the portions of the reflective layer 107 and the insulating layer 108 on the light-emitting diode.

[0106] As shown in Figure 13 and Figure 12 In an embodiment of the present application, the first connecting electrode 1091 is disposed on the second semiconductor layer 103 and extends into the first semiconductor layer 101 and is connected with the first semiconductor layer 101. The second connecting electrode 1092 is disposed on the transparent conductive layer 104 and is connected with the transparent conductive layer 104. The first connecting electrode 1091 and the second connecting electrode 1092 are disposed at a third angle A3 with the first epitaxial structure or the transparent conductive layer 104, the third angle A3 is an obtuse angle, and the third angle A3 ranges from 125° to 160°.

[0107] As shown in Figure 14 and Figure 12 In some embodiments, the sidewall and the bottom wall of the groove 010 are disposed at a fourth angle A4, the fourth angle A4 is an obtuse angle, and the fourth angle A4 ranges from 125° to 165°.

[0108] As shown in Figure 14 and Figure 12 In the present application, disposing the corners in the light-emitting diode at obtuse angles can avoid the cracking of the insulating layer and the reflective layer caused by sharp corners when the insulating layer and the reflective layer are formed, and thus the soldering material can be prevented from penetrating into the light-emitting diode.

[0109] In some embodiments, the corners in the light-emitting diode can also be disposed at smooth obtuse angles.

[0110] In some embodiments, in order to increase the brightness of the light-emitting diode, a brightening substrate can also be added to the light-emitting layer of the light-emitting diode.

[0111] Specifically, as shown in Figure 14As shown in the embodiment of the present application, the brightening substrate 106 is arranged on the second semiconductor layer 103, and is adhered to the surface of the transparent conductive layer 104 through the bonding layer 105. The side on which the second semiconductor layer 103 is arranged is set as the light emitting layer, and the reflective layer 107, the insulating layer 108, the first electrode and the second electrode are arranged on the side of the first semiconductor layer 101. The brightening substrate 106 can be a transparent substrate such as sapphire substrate or silicon substrate. The bonding layer 105 can be a transparent adhesive layer, which can be made of materials such as silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiNx), magnesium fluoride (MgF), aluminum nitride (ALN) or gallium nitride (GaN). In the embodiment, the thickness of the bonding layer 105 is 100 nm to 1000 nm. For different materials, the bonding layer 105 can be made by methods such as evaporation, sputtering or plasma enhanced chemical vapor deposition (PECVD), which can be selected according to the used materials.

[0112] Referring to Figure 15 As shown in the embodiment of the present application, the brightening substrate 106 is a single-side polished substrate, in which the side of the brightening substrate 106 close to the second semiconductor layer 103 is polished, and the side far from the second semiconductor layer 103 is provided with a plurality of convex portions 1061. The side close to the second semiconductor layer 103 is set as the polished surface, which can avoid the scattering, reflection or refraction of light in the brightening substrate. The side far from the second semiconductor layer 103 is provided with a plurality of convex portions 1061, which can increase the light emitting area of the light emitting diode and improve the light emitting brightness. The convex portions 1061 can be in the shape of pyramid, cylinder, cube or other polygon.

[0113] Referring to Figure 15In an embodiment of the present application, the overall thickness of the brightness enhancement substrate 106 (including the protrusions 1061) is, for example, 50-500 μm, wherein the height of the protrusions 1061 is greater than, for example, 1 μm, and specifically, for example, 1-10 μm. The protrusions 1061 are arranged in an array, and the adjacent protrusions 1061 are arranged at equal intervals. In some embodiments, the area of each protrusion 1061 can be greater than the area between the adjacent protrusions 1061. In other embodiments, the area of each protrusion 1061 can be less than the area between the adjacent protrusions 1061. In other embodiments, the area of each protrusion 1061 can be equal to the area between the adjacent protrusions 1061. In forming the brightness enhancement substrate 106, the transparent conductive layer 104 can be bonded to the brightness enhancement substrate 106, and then the brightness enhancement substrate 106 is etched away from the surface of the second semiconductor layer 103 by using wet etching or inductive coupled plasma (ICP) etching to form the protrusions 1061. The brightness enhancement substrate 106 is a transparent substrate.

[0114] Referring to Figure 15 In an embodiment of the present application, the first connecting electrode 1091 is arranged on the surface of the first semiconductor layer 101 and extends into the first semiconductor layer 101, and the second connecting electrode 1092 is also arranged on the surface of the first semiconductor layer 101, and extends into the second semiconductor layer 103 through the first semiconductor layer 101 and the light emitting layer 102. The second connecting electrode 1092 can penetrate the second semiconductor layer 103 to contact the transparent conductive layer 104, thereby enhancing the contact between the second connecting electrode 1092 and the second semiconductor layer 103. The first soldering electrode 1101 is connected to the first connecting electrode 1091 through the insulating layer 108 and the reflective layer 107, and the second soldering electrode 1102 is connected to the second connecting electrode 1092 through the insulating layer 108 and the reflective layer 107. The radial dimension of the first soldering electrode 1101 and the second soldering electrode 1102 is much greater than the dimension of the first connecting electrode 1091 and the second connecting electrode 1092, thereby facilitating soldering. The first connecting electrode 1091 and the second connecting electrode 1092 are made of a metal or an alloy with good conductivity, and the first soldering electrode 1101 and the second soldering electrode 1102 are made of a metal with good conductivity and a low melting point.

[0115] Referring to Figure 15As shown in the present application, when the light emitting diode 10 is formed, a buffer layer 1001 can be first formed on the substrate 100, and then the first semiconductor layer 101, the light emitting layer 102 and the second semiconductor layer 103, i.e. the first epitaxial structure, can be formed on the buffer layer 1001 in sequence. Then the transparent conductive layer 104 is formed on the second semiconductor layer 103, and a brightening substrate 106 is bonded to the transparent conductive layer 104 through the bonding layer 105. Then the substrate 100 and the buffer layer 1001 are removed, and the first semiconductor layer 101 is thinned to only leave the heavily doped N-type semiconductor layer. As shown in the present application, Figure 15 As shown in the present application, when the first epitaxial structure is used, Figure 2 As shown in the present application, when the first epitaxial structure is used,

[0116] As shown in the present application, when the light emitting diode 10 is formed, a buffer layer 1001 can be first formed on the substrate 100, and then the first semiconductor layer 101, the light emitting layer 102 and the second semiconductor layer 103, i.e. the first epitaxial structure, can be formed on the buffer layer 1001 in sequence. Then the transparent conductive layer 104 is formed on the second semiconductor layer 103, and a brightening substrate 106 is bonded to the transparent conductive layer 104 through the bonding layer 105. Then the substrate 100 and the buffer layer 1001 are removed, and the first semiconductor layer 101 is thinned to only leave the heavily doped N-type semiconductor layer. As shown in the present application, Figure 2 As shown in the present application, when the light emitting diode 10 is formed, a buffer layer 1001 can be first formed on the substrate 100, and then the first semiconductor layer 101, the light emitting layer 102 and the second semiconductor layer 103, i.e. the first epitaxial structure, can be formed on the buffer layer 1001 in sequence. Then the transparent conductive layer 104 is formed on the second semiconductor layer 103, and a brightening substrate 106 is bonded to the transparent conductive layer 104 through the bonding layer 105. Then the substrate 100 and the buffer layer 1001 are removed, and the first semiconductor layer 101 is thinned to only leave the heavily doped N-type semiconductor layer. As shown in the present application,

[0117] As shown in the present application, when the light emitting diode 10 is formed, a buffer layer 1001 can be first formed on the substrate 100, and then the first semiconductor layer 101, the light emitting layer 102 and the second semiconductor layer 103, i.e. the first epitaxial structure, can be formed on the buffer layer 1001 in sequence. Then the transparent conductive layer 104 is formed on the second semiconductor layer 103, and a brightening substrate 106 is bonded to the transparent conductive layer 104 through the bonding layer 105. Then the substrate 100 and the buffer layer 1001 are removed, and the first semiconductor layer 101 is thinned to only leave the heavily doped N-type semiconductor layer. As shown in the present application, Figure 15 Figure 15 As shown in the present application, when the light emitting diode 10 is formed, a buffer layer 1001 can be first formed on the substrate 100, and then the first semiconductor layer 101, the light emitting layer 102 and the second semiconductor layer 103, i.e. the first epitaxial structure, can be formed on the buffer layer 1001 in sequence. Then the transparent conductive layer 104 is formed on the second semiconductor layer 103, and a brightening substrate 106 is bonded to the transparent conductive layer 104 through the bonding layer 105. Then the substrate 100 and the buffer layer 1001 are removed, and the first semiconductor layer 101 is thinned to only leave the heavily doped N-type semiconductor layer. As shown in the present application,

[0118] When the light emitting diode display panel made of the light emitting diode provided in the present application is applied to an electronic device, the electronic device at least comprises the light emitting diode display panel, a control device and a power supply device, the light emitting diode display panel and the control device are electrically connected to the power supply device, and the light emitting diode display panel is electrically connected to the control device. The power supply device may, for example, be a power board for converting alternating current into a specific voltage, or may be a battery, and the power supply device is used to supply power to the driving device and the light emitting diode display panel. The control device may comprise a control panel and control keys for adjusting the light emitting diode display panel. The control keys may be any artificial interactive structure such as a button, a remote control or a touch screen device on the screen which is electrically connected to the control panel. The control panel may adjust the state of the light emitting diode display panel according to the instructions input by the control keys, including but not limited to controlling the brightness, the gray scale, the color and other input or output signals of the panel.

[0119] In summary, the light emitting diode provided in the present application comprises a first epitaxial structure composed of a first semiconductor layer, a light emitting layer and a second semiconductor layer, a transparent conductive layer arranged on the surface of the second semiconductor layer, a second connecting electrode arranged on the transparent conductive layer, and a first connecting electrode arranged on the second conductive layer and connected to the first conductive layer. It also comprises a first insulating layer, a reflective layer and a second insulating layer arranged in sequence on the first epitaxial structure, and a first soldering electrode connected to the first connecting electrode and a second soldering electrode connected to the second connecting electrode, which pass through the first insulating layer, the reflective layer and the second insulating layer. The first soldering electrode and the second soldering electrode comprise a contact layer, a barrier layer and a soldering layer arranged in sequence.

[0120] The above description is only the preferred embodiment of the present application and the explanation of the applied technical principles, and those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solutions formed by the specific combination of the above technical features, and should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above features with the technical features disclosed in the present application (but not limited to) having similar functions.

[0121] In addition to the technical features described in the specification, the remaining technical features are known to those skilled in the art, and in order to highlight the innovative features of the present application, the remaining technical features will not be described here.

Claims

1. A light emitting diode, characterized by, The application relates to a light emitting diode, comprising: a substrate; a first epitaxial structure arranged on the substrate, and the first epitaxial structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer arranged in a stack; a first insulating layer arranged on the first epitaxial structure; a reflective layer arranged on the first insulating layer; and a second insulating layer arranged on the reflective layer, and the second insulating layer covers the reflective layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer, and the first electrode and the second electrode are provided with a barrier layer, and the barrier layer extends out of the second insulating layer from the reflective layer, and the barrier layer is higher than the second insulating layer; wherein the barrier layer comprises first layers and second layers arranged in a stack, the first layers are titanium metal layers, and the second layers are aluminum metal layers. The first electrode and the second electrode comprise a connecting electrode, and the connecting electrode extends into the first insulating layer from the first semiconductor layer or the second semiconductor layer.

2. The light emitting diode of claim 1, wherein, The first electrode and the second electrode comprise a welding electrode connected to the connecting electrode, and the welding electrode extends out of the surface of the second insulating layer from the first insulating layer.

3. The light emitting diode of claim 2, wherein, The welding electrode comprises a contact layer arranged on the connecting electrode and extending into the reflective layer from the first insulating layer.

4. The light emitting diode of claim 3, wherein, The welding electrode comprises the barrier layer arranged on the contact layer and extending out of the surface of the second insulating layer from the barrier layer.

5. The light emitting diode of claim 4, wherein, The welding electrode comprises a welding layer arranged on the barrier layer.

6. The light emitting diode of claim 5, wherein, The second semiconductor layer comprises a multi-layer scattering layer.

7. The light emitting diode of claim 1, wherein, The application further relates to a method for manufacturing a light emitting diode, comprising the following steps:

8. A method of fabricating a light emitting diode, comprising: providing a substrate; forming a first epitaxial structure on the substrate, and the first epitaxial structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer arranged in a stack; forming a first electrode connected to the first semiconductor layer; forming a second electrode connected to the second semiconductor layer; forming a first insulating layer on the first epitaxial structure; forming a reflective layer on the first insulating layer; and forming a second insulating layer on the reflective layer, and the second insulating layer covers the reflective layer; forming a first electrode electrically connected to the first semiconductor layer; forming a second electrode electrically connected to the second semiconductor layer, and the first electrode and the second electrode are provided with a barrier layer, and the barrier layer extends out of the second insulating layer from the reflective layer, and the barrier layer is higher than the second insulating layer; wherein the barrier layer comprises first layers and second layers arranged in a stack, the first layers are titanium metal layers, and the second layers are aluminum metal layers. The application further relates to a light emitting diode comprising any one of the light emitting diodes according to claims 1 to 7. ​ 9. A light emitting diode display panel, characterized by ​

Images