Silicon carbide wafer polishing equipment

Abstract

The present invention relates to a silicon carbide wafer polishing device, comprising a polishing mechanical arm, a wafer surface plasma softening treatment device, and a wafer surface polishing device. A wafer electrode is provided on the wafer suction cup of the polishing mechanical arm, and the wafer electrode is connected to the silicon carbide wafer picked up by the wafer suction cup. The wafer surface plasma softening treatment device comprises a pulse power supply and a stainless steel electrode. Under the action of the pulse voltage, a water-based electrolyte undergoes a plasma activation modification reaction with the surface of the silicon carbide wafer to generate a softened layer, and then the softened layer on the surface of the silicon carbide wafer is polished and removed by a wafer surface polishing device. The present invention adopts an automated precision polishing process that combines a polishing mechanical arm, a wafer surface plasma softening treatment device, and a wafer surface polishing device. Compared with the existing process scheme that mainly relies on manual operation and lacks dedicated polishing equipment, it has the characteristics of high polishing efficiency and better polishing effect.

Description

Technical Field

[0001] The invention relates to a silicon carbide wafer polishing device, in particular to a silicon carbide wafer plasma-assisted polishing device, and belongs to the field of silicon carbide wafer polishing. Background Art

[0002] Silicon carbide single crystal is a third-generation high-temperature wide-bandgap semiconductor material. Silicon carbide is very hard and has excellent thermal conductivity, electrical conductivity, and high-temperature oxidation resistance. Therefore, silicon carbide wafers are widely used in various extreme environments and have irreplaceable advantages over other materials. The surface quality of silicon carbide wafers has an important impact on device performance and service life, but due to the high hardness and brittleness of silicon carbide, how to achieve precision polishing of large-diameter ultra-thin silicon carbide wafers has become an urgent problem to be solved.

[0003] At present, the existing silicon carbide wafer polishing processes include mechanical polishing, chemical mechanical polishing, and plasma assisted polishing. The mechanical polishing process uses mechanical grinding to achieve cutting at the critical point between the plasticity and brittleness of the silicon carbide wafer, but the critical cutting layer is not easy to directly identify, and the surface quality of the processed wafer is not good. The chemical mechanical polishing process first contacts the surface of the silicon carbide wafer with the polishing liquid, a chemical reaction occurs to form a thin film, and then the film is removed by mechanical grinding, but this process is prone to chemical residues, which are not easy to remove, thereby affecting the surface quality of the silicon carbide wafer. The plasma assisted polishing process uses plasma electrochemical methods to generate a large amount of oxygen plasma on the surface of the silicon carbide wafer, which reacts with the surface material of the silicon carbide wafer to generate a softened layer with a lower hardness, and then uses soft abrasives to remove the softened layer, thereby achieving precision polishing. However, there are currently few special equipment for applying plasma assisted polishing processes. Summary of the invention

[0004] The silicon carbide wafer polishing equipment of the present invention discloses a new solution, which adopts a precision polishing process that combines a polishing mechanical arm, a wafer surface plasma softening treatment device, and a wafer surface polishing device. On the basis of the plasma assisted polishing process, an automated process is realized through the polishing mechanical arm, which solves the problems of the existing process lacking dedicated polishing equipment, the process adopting manual operation, low efficiency and prone to errors.

[0005] The silicon carbide wafer polishing equipment of the present invention comprises a polishing mechanical arm, a wafer surface plasma softening treatment device, and a wafer surface polishing device. The polishing mechanical arm is provided with a wafer suction cup, and the wafer suction cup is provided with a wafer electrode, the wafer electrode is connected to the silicon carbide wafer picked up by the wafer suction cup, and the silicon carbide wafer is transported to the processing station of the wafer surface plasma softening treatment device through the polishing mechanical arm, and the wafer surface plasma softening treatment device comprises a pulse power supply and a stainless steel electrode, and the stainless steel electrode is electrically connected to the wafer electrode through the pulse power supply.

[0006] The water-based electrolyte disposed between the stainless steel electrode and the silicon carbide wafer undergoes a plasma activation modification reaction with the surface of the silicon carbide wafer under the action of a pulse voltage with a predetermined voltage threshold and pulse frequency. The plasma activation modification reaction generates a softened layer on the surface of the silicon carbide wafer. The silicon carbide wafer with the softened layer is transported to a processing station of a wafer surface polishing device by a polishing robot arm. The wafer surface polishing device grinds and removes the softened layer on the surface of the silicon carbide wafer.

[0007] Furthermore, the polishing robot arm of the present scheme includes a rotating column, which includes a driving base and a column body. A rotating drive motor is provided in the driving base, and the output end of the rotating drive motor is upwardly connected to the lower end of the column body for transmission. A suction cup cantilever is provided at the upper end of the column body, and a wafer suction cup is provided at the far end of the suction cup cantilever. A cantilever lifting mechanism is provided in the column body, and the cantilever lifting mechanism drives the suction cup cantilever to lift and lower.

[0008] Furthermore, a cantilever lifting mechanism is provided in the column body of the present scheme, and the cantilever lifting mechanism includes a lifting stud, the lower end of the lifting stud is transmission connected to the stud motor, the upper end of the lifting stud forms an axial positioning connection with the top in the column body, the lifting stud forms a threaded transmission connection with the lifting inner screw block, one end of the lifting inner screw block extending out of the lifting slot on one side of the column body is connected to the suction cup cantilever, and the other end of the lifting inner screw block forms a lifting guide sliding connection with the lifting guide rail on the inner wall of the column body.

[0009] Furthermore, the chip suction cup of the present scheme includes a cylindrical suction cup shell, in which a negative pressure chamber is provided, one end of the negative pressure chamber is connected to an external negative pressure air source, and the other end of the negative pressure chamber is connected to a central air channel and a plurality of arc-shaped air channels, the arc-shaped suction ports of the arc-shaped air channels are equidistantly arranged on the edge of the suction end of the suction cup shell, and the suction port of the central air channel is arranged in the central part of the suction end of the suction cup shell.

[0010] Furthermore, the wafer surface plasma softening treatment device of the present scheme includes a softening treatment platform, a softening treatment tank is provided on the table top of the softening treatment platform, an electrode mounting tank is provided on the bottom surface of the softening treatment tank, a stainless steel electrode is provided in the electrode mounting tank, and an electrolyte filling port is provided on the bottom surface of the softening treatment tank, and the electrolyte filling port is connected to the electrolyte supply tank.

[0011] Furthermore, the chip surface polishing device of the present scheme includes a polishing processing platform, a polishing processing groove is provided on the table top of the polishing processing platform, a polishing disc mounting groove is provided on the bottom surface of the polishing processing groove, a polishing disc is provided in the polishing disc mounting groove, the polishing disc is connected to the polishing motor below, and the polishing motor drives the polishing disc to rotate.

[0012] Furthermore, the polishing disc of the present solution includes a disc body, a polishing cloth is wrapped on the polishing end of the disc body, a cerium oxide polishing liquid filling port is opened on the inner groove wall of the polishing treatment groove, and the cerium oxide polishing liquid filling port is connected to the polishing liquid supply tank.

[0013] Furthermore, the polishing robot arm of the present invention is also provided with a suction cup rotation driving component, and the suction cup rotation driving component drives the wafer suction cup to rotate.

[0014] Furthermore, the present solution also includes a loading device and an unloading device. The loading device includes a loading conveyor belt, and a plurality of loading trays are arranged at intervals along the conveying direction on the loading conveyor belt. The unloading device includes a unloading conveyor belt, and a plurality of unloading trays are arranged at intervals along the conveying direction on the unloading conveyor belt. The polishing robot arm picks up the silicon carbide wafers to be processed from the loading tray, and the polishing robot arm transports the processed silicon carbide wafers to the unloading tray.

[0015] Furthermore, the polishing robot arm of the present scheme includes a rotating column, the upper end of the rotating column is provided with four suction cup cantilevers arranged equidistantly along the circumference, the far end of the suction cup cantilever is provided with a wafer suction cup, and four cantilever lifting mechanisms are provided in the rotating column. The cantilever lifting mechanisms drive the corresponding suction cup cantilever to lift and lower, and the rotating column drives the wafer suction cup on the suction cup cantilever to circulate among the set stations of the loading device, the wafer surface plasma softening treatment device, the wafer surface polishing device, and the unloading device.

[0016] The silicon carbide wafer polishing equipment of the present invention adopts a precision polishing process that combines a polishing mechanical arm, a wafer surface plasma softening treatment device, and a wafer surface polishing device. On the basis of the plasma assisted polishing process, an automated process is realized through a polishing mechanical arm. Under the operation of the polishing mechanical arm, the surface of the silicon carbide wafer is sequentially subjected to plasma activation modification treatment and polishing and grinding to achieve the technical purpose of precision polishing. Compared with the existing process scheme that mainly relies on manual operation and lacks special polishing equipment, it has the characteristics of high polishing efficiency and better polishing effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the front view of the silicon carbide wafer polishing equipment.

[0018] Figure 2 Schematic diagram of a top view of a silicon carbide wafer polishing apparatus.

[0019] Figure 3 is a schematic cross-sectional view of an example of a polishing robot arm.

[0020] Figure 4 It is a schematic diagram of a front cross-sectional view of a wafer chuck.

[0021] Figure 5 is a schematic diagram of the suction end of the wafer suction cup.

[0022] Figure 6 It is a cross-sectional schematic diagram of a wafer surface plasma softening treatment device.

[0023] Figure 7 It is a schematic cross-sectional view of a wafer surface polishing device.

[0024] Figure 8 It is a top view schematic diagram of an improved type of silicon carbide wafer polishing equipment.

[0025] in,

[0026] 100 is a polishing robot arm, 110 is a wafer suction cup, 111 is a suction cup housing, 112 is a negative pressure chamber, 113 is a central airway, 114 is an arc airway, 120 is a rotary drive motor, 130 is a suction cup cantilever, 141 is a lifting stud, 142 is a stud motor, 143 is a lifting inner screw block, 144 is a lifting guide rail,

[0027] 200 is a wafer surface plasma softening treatment device, 210 is a stainless steel electrode, 220 is a softening treatment platform, 221 is a softening treatment tank, 222 is an electrolyte filling port, 230 is an electrolyte supply tank,

[0028] 300 is a wafer surface polishing device, 310 is a polishing processing platform, 311 is a polishing processing tank, 312 is a cerium oxide polishing liquid filling port, 320 is a polishing liquid supply tank, 331 is a polishing disc, 332 is a polishing motor,

[0029] 400 is a loading device, 410 is a loading conveyor belt, 420 is a loading tray,

[0030] 500 is a material unloading device, 510 is a material unloading conveyor belt, and 520 is a material unloading tray. DETAILED DESCRIPTION

[0031] The following is a detailed description with reference to the accompanying drawings.

[0032] like Figure 1 , 2As shown in Figures 3 and 4, the silicon carbide wafer polishing device of the present invention comprises a polishing robot arm 100, a wafer surface plasma softening treatment device 200, and a wafer surface polishing device 300. The polishing robot arm 100 is provided with a wafer chuck 110, and the wafer chuck 110 is provided with a wafer electrode, and the wafer electrode is connected to the silicon carbide wafer picked up by the wafer chuck 110, and the silicon carbide wafer is transported to the processing station of the wafer surface plasma softening treatment device 200 by the polishing robot arm 100, and the wafer surface plasma softening treatment device 200 comprises a pulse power supply and a stainless steel electrode 210, and the stainless steel electrode 210 is electrically connected to the wafer electrode through the pulse power supply. The water-based electrolyte disposed between the stainless steel electrode 210 and the silicon carbide wafer undergoes a plasma activation modification reaction with the surface of the silicon carbide wafer under the action of a pulse voltage of a predetermined voltage threshold and pulse frequency. The plasma activation modification reaction generates a softened layer on the surface of the silicon carbide wafer. The silicon carbide wafer with the softened layer is transported to a processing station of a wafer surface polishing device 300 by a polishing robot arm 100. The wafer surface polishing device 300 grinds and removes the softened layer on the surface of the silicon carbide wafer.

[0033] The above scheme adopts a precision polishing process combining a polishing robot 100, a wafer surface plasma softening treatment device 200, and a wafer surface polishing device 300, and realizes an automated process through a polishing robot based on a plasma-assisted polishing process. Figure 1 , 2 As shown, the polishing robot arm 100 sucks the silicon carbide wafer to be polished through the wafer suction cup 110 and then transfers it to the processing station of the wafer surface plasma softening treatment device 200, so that the silicon carbide wafer contacts the water-based electrolyte to achieve plasma activation and modification reaction. The specific process is as follows. The pulse power supply is set to a voltage greater than 300V and a switching frequency of 100kHz. The silicon carbide wafer is set as the anode and the stainless steel electrode 210 is set as the cathode. An electrolytic reaction occurs in the water-based electrolyte. Water is electrolyzed on the surface of the silicon carbide wafer to produce oxygen, which quickly adheres to the anode surface to form a dense oxygen film. The OH near the anode - After losing the electrons, the electrons collide with oxygen, and the oxygen is ionized into oxygen plasma by the strong electric field, oxidizing the silicon in the activated state into silicon dioxide, which is deposited on the surface of the silicon carbide wafer in the form of a softened layer. The polishing robot 100 is transferred to the processing station of the wafer surface polishing device 300, so that the softened layer generated on the surface of the silicon carbide wafer contacts the polishing end of the polishing device 300, and the polishing device 300 is started to grind and remove the softened layer on the surface of the silicon carbide wafer, thereby achieving the technical purpose of precision polishing. Therefore, this solution solves the problems of the existing process lacking dedicated polishing equipment, the process using manual operation, low efficiency and prone to errors, and has the characteristics of high polishing efficiency and better polishing effect.

[0034] Based on the above scheme, in order to realize the function of the polishing robot arm 100, the polishing robot arm 100, the wafer surface plasma softening treatment device 200, and the wafer surface polishing device 300 are arranged at appropriate positions, such as Figure 2 As shown, with the rotation of the polishing robot arm 100, automated transportation and processing are achieved. Figure 3 As shown, the polishing robot arm 100 includes a rotating column, and the rotating column includes a driving base and a column body. A rotating driving motor 120 is provided in the driving base. The output end of the rotating driving motor 120 is upwardly connected to the lower end of the column body for transmission. A suction cup cantilever 130 is provided at the upper end of the column body. A wafer suction cup 110 is provided at the far end of the suction cup cantilever 130. A cantilever lifting mechanism is provided in the column body, and the cantilever lifting mechanism drives the suction cup cantilever 130 to move up and down. The rotating driving motor 120 drives the column body to realize the switching of the wafer suction cup 110 between various workstations. The cantilever lifting mechanism can drive the wafer suction cup 110 to move up and down to meet the requirements of plasma activation modification processing and polishing processing. On this basis, the present scheme also discloses a specific scheme of the cantilever lifting mechanism, such as Figure 3 As shown, a cantilever lifting mechanism is provided in the column body, and the cantilever lifting mechanism includes a lifting stud 141, the lower end of the lifting stud 141 is transmission-connected with a stud motor 142, the upper end of the lifting stud 141 is axially positioned and connected with the top of the column body, the lifting stud 141 is threadedly connected with a lifting inner screw block 143, one end of the lifting inner screw block 143 extending out of the lifting slot on one side of the column body is connected with the suction cup cantilever 130, and the other end of the lifting inner screw block 143 is connected with a lifting guide rail 144 on the inner side wall of the column body to form a lifting guide sliding connection. The stud motor 142 drives the suction cup cantilever 130 and the wafer suction cup 110 to move up and down through the threaded transmission relationship between the lifting stud 141 and the lifting inner screw block 143, thereby meeting the processing requirements.

[0035] In order to realize the functions of the wafer chuck 110, such as Figure 3 , 4 As shown in Figures 5 and 6, the wafer suction cup 110 includes a cylindrical suction cup shell 111, in which a negative pressure chamber 112 is provided, one end of the negative pressure chamber 112 is connected to an external negative pressure gas source, and the other end of the negative pressure chamber 112 is connected to a central air channel 113 and a plurality of arc-shaped air channels 114, arc-shaped suction ports of the arc-shaped air channels 114 are equidistantly arranged on the edge of the suction end of the suction cup shell 111, and the suction port of the central air channel 113 is arranged at the center of the suction end of the suction cup shell 111. The external negative pressure gas source forms a negative pressure on the suction end of the suction cup shell 111 through the negative pressure chamber 112, the central air channel 113, and the plurality of arc-shaped air channels 114, as shown in Figures 5 and 6. Figure 5As shown, the suction ports of multiple arc-shaped air channels 114 arranged on the edge of the suction end of the suction cup shell 111 cooperate with the suction port of the central air channel 113 arranged in the central part of the suction end of the suction cup shell 111, which can play a good adsorption and fixing role for the thin sheet of silicon carbide wafer, and the problem of uneven pressure will not occur during the polishing process. Compared with the existing method of clamping the wafer, it not only avoids the problem that the clamping itself may damage the wafer, but also solves the problem that the clamping of the thin wafer may cause uneven force on the wafer during the polishing process, thereby greatly improving the polishing effect of the silicon carbide wafer.

[0036] In order to realize the functions of the wafer surface plasma softening treatment device 200, as Figure 6 As shown, the wafer surface plasma softening treatment device 200 includes a softening treatment platform 220, a softening treatment tank 221 is provided on the table of the softening treatment platform 220, an electrode installation tank is provided on the bottom of the softening treatment tank 221, a stainless steel electrode 210 is provided in the electrode installation tank, an electrolyte filling port 222 is provided on the bottom of the softening treatment tank 221, and the electrolyte filling port 222 is connected to the electrolyte supply tank 230. The polishing robot 100 sucks the silicon carbide wafer through the wafer suction cup 110, and places it into the softening treatment tank 221, and sets it at a required interval with the stainless steel electrode 210. The electrolyte supply tank 230 delivers the electrolyte to the reaction station through the electrolyte filling port 222, and turns on the pulse power supply to perform plasma activation modification reaction. Among them, the reaction is completed in the softening treatment tank 221 of the softening treatment platform 220, which effectively avoids the problem of electrolyte overflow and improves the safety of pulse power supply electrolysis operation. Compared with the existing method of using a protective cover or a sealing cover, it not only saves component costs and equipment space, but also facilitates control and maintenance.

[0037] In order to realize the functions of the wafer surface polishing device 300, as Figure 7As shown, the wafer surface polishing device 300 includes a polishing processing platform 310, a polishing processing tank 311 is provided on the table of the polishing processing platform 310, a polishing disc 331 mounting groove is provided on the bottom surface of the polishing processing tank 311, a polishing disc 331 is provided in the polishing disc 331 mounting groove, and the polishing disc 331 is connected to the polishing motor 332 below by transmission, and the polishing motor 332 drives the polishing disc 331 to rotate. The polishing robot arm 100 rotates to the polishing processing station, and the silicon carbide wafer is placed in the polishing processing tank 311 through the wafer suction cup 110, so that the polishing surface of the silicon carbide wafer with a softened layer is pressed and contacted with the polishing disc 331, and the polishing motor 332 is started to realize the polishing processing operation. On this basis, in order to achieve the removal of the softened layer by the soft abrasive, the polishing disc 331 of the present solution includes a disc body, a polishing cloth is wrapped on the polishing end of the disc body, a cerium oxide polishing liquid filling port 312 is opened on the inner groove wall of the polishing treatment groove 311, and the cerium oxide polishing liquid filling port 312 is connected to the polishing liquid supply tank 320. The polishing liquid supply tank 320 delivers the cerium oxide polishing liquid to the polishing station through the cerium oxide polishing liquid filling port 312. The cerium oxide polishing liquid is a micron or submicron CeO 2 The cerium oxide grinding liquid is an abrasive. The grinding liquid has the characteristics of good dispersibility, fine particle size, uniform particle size distribution, moderate hardness, etc. It is suitable for precision polishing of microcrystalline glass substrates, crystal surfaces, high-precision optical instruments, optical lenses, integrated circuit photomasks, etc. On this basis, in order to improve the polishing effect, the polishing robot arm 100 of this scheme is also provided with a suction cup rotation drive component, which drives the wafer suction cup 110 to rotate, and the rotation direction of the wafer suction cup 110 is opposite to the rotation direction of the polishing disc 331, thereby further improving the efficiency and effect of polishing. At the same time, in order to facilitate the polishing process, the disc diameter of the polishing disc 331 is greater than twice the disc diameter of the silicon carbide wafer, and the polishing surface of the silicon carbide wafer can be placed on one side of the polishing disc 331 to facilitate uniform polishing.

[0038] In order to further improve the overall automation of polishing equipment and realize automatic loading and unloading, such as Figure 1 , 2 As shown, the present solution further includes a loading device 400 and a unloading device 500. The loading device 400 includes a loading conveyor belt 410, on which a plurality of loading trays 420 are arranged at intervals along the conveying direction. The unloading device 500 includes a unloading conveyor belt 510, on which a plurality of unloading trays 520 are arranged at intervals along the conveying direction. The polishing robot arm 100 picks up the silicon carbide wafers to be processed from the loading tray 420, and the polishing robot arm 100 transports the processed silicon carbide wafers to the unloading tray 520. Figure 1 , 2As shown, the polishing robot arm 100 rotates to the top of the loading tray 420, picks up the silicon carbide wafer to be processed in the loading tray 420, and then rotates to the processing positions of the wafer surface plasma softening treatment device 200 and the wafer surface polishing device 300 in sequence to perform polishing surface modification softening, grinding and polishing processing, and finally rotates to the top of the unloading tray 520, places the processed silicon carbide wafer therein, and completes the polishing process.

[0039] Based on the above scheme, in order to further improve the overall processing efficiency of the equipment and shorten the processing cycle of the wafer, Figure 8 As shown, the polishing robot arm 100 includes a rotating column, and the upper end of the rotating column is provided with four suction cup cantilevers 130 arranged equidistantly along the circumference, and the far end of the suction cup cantilever 130 is provided with a wafer suction cup 110, and four cantilever lifting mechanisms are provided in the rotating column, and the cantilever lifting mechanisms drive the corresponding suction cup cantilever 130 to move up and down, and the rotating column drives the wafer suction cup 110 on the suction cup cantilever 130 to circulate among the set stations of the loading device 400, the wafer surface plasma softening treatment device 200, the wafer surface polishing device 300, and the unloading device 500. Figure 8 As shown, the four wafer suction cups 110 on the rotating column are provided with wafers to be processed, wafers undergoing surface modification and softening processing, wafers undergoing grinding and polishing, and wafers after processing in sequence, and they rotate in an automatic cycle. In this way, two silicon carbide wafers can be processed at the same time, which significantly improves the processing efficiency of the wafers. On the basis of the basic equipment scheme, the automation level and processing efficiency of the overall equipment are greatly improved.

[0040] Unless otherwise specified, the structures, mechanisms, components, etc. disclosed in this solution can be implemented using common and customary solutions known in the art. The silicon carbide wafer polishing equipment of this solution is not limited to the contents disclosed in the specific implementation methods. The technical solutions in the embodiments can be extended based on the understanding of those skilled in the art. Simple replacement solutions made by those skilled in the art based on this solution combined with common knowledge also fall within the scope of this solution.

Claims

1. Silicon carbide wafer polishing equipment, characterized by The invention comprises a polishing mechanical arm, a wafer surface plasma softening treatment device, and a wafer surface polishing device. The polishing mechanical arm is provided with a wafer suction cup, and the wafer suction cup is provided with a wafer electrode. The wafer electrode is connected to the silicon carbide wafer picked up by the wafer suction cup. The silicon carbide wafer is transported to the processing station of the wafer surface plasma softening treatment device through the polishing mechanical arm. The wafer surface plasma softening treatment device comprises a pulse power supply and a stainless steel electrode. The stainless steel electrode is electrically connected to the wafer electrode through the pulse power supply. The water-based electrolyte disposed between the stainless steel electrode and the silicon carbide wafer undergoes a plasma activation modification reaction with the surface of the silicon carbide wafer under the action of a pulse voltage with a predetermined voltage threshold and a pulse frequency, and the plasma activation modification reaction generates a softened layer on the surface of the silicon carbide wafer. The silicon carbide wafer with the softened layer is transported to a processing station of the wafer surface polishing device by the polishing mechanical arm, and the wafer surface polishing device polishes and removes the softened layer on the surface of the silicon carbide wafer. The polishing robot arm comprises a rotating column, and the rotating column comprises a driving base and a column body. A rotating driving motor is arranged in the driving base, and an output end of the rotating driving motor is upwardly connected to the lower end of the column body for transmission. A suction cup cantilever is arranged at the upper end of the column body, and the wafer suction cup is arranged at the far end of the suction cup cantilever. A cantilever lifting mechanism is arranged in the column body, and the cantilever lifting mechanism drives the suction cup cantilever to move up and down; The cantilever lifting mechanism is arranged in the column body, and the cantilever lifting mechanism includes a lifting stud, the lower end of the lifting stud is transmission-connected with the stud motor, the upper end of the lifting stud is axially positioned and connected with the top of the column body, the lifting stud is threadedly connected with the lifting inner screw block, one end of the lifting inner screw block extending out of the lifting slot on one side of the column body is connected with the suction cup cantilever, and the other end of the lifting inner screw block is connected with the lifting guide rail on the inner side wall of the column body to form a lifting guide sliding connection; The wafer suction cup comprises a cylindrical suction cup shell, a negative pressure chamber is arranged in the suction cup shell, one end of the negative pressure chamber is connected to an external negative pressure gas source, the other end of the negative pressure chamber is connected to a central air channel and a plurality of arc-shaped air channels, the arc-shaped suction ports of the arc-shaped air channels are equidistantly arranged on the edge of the suction end of the suction cup shell, and the suction port of the central air channel is arranged at the central part of the suction end of the suction cup shell; The wafer surface plasma softening treatment device comprises a softening treatment platform, a softening treatment tank is arranged on the table of the softening treatment platform, an electrode mounting tank is arranged on the bottom of the softening treatment tank, the stainless steel electrode is arranged in the electrode mounting tank, an electrolyte filling port is opened on the bottom of the softening treatment tank, and the electrolyte filling port is connected to the electrolyte supply tank; It also includes a loading device and an unloading device, the loading device includes a loading conveyor belt, and a plurality of loading trays are arranged at intervals along the conveying direction on the loading conveyor belt; the unloading device includes a unloading conveyor belt, and a plurality of unloading trays are arranged at intervals along the conveying direction on the unloading conveyor belt; the polishing robot arm picks up the silicon carbide wafers to be processed from the loading tray, and the polishing robot arm transports the processed silicon carbide wafers to the unloading tray.

2. The silicon carbide wafer polishing device according to claim 1, characterized in that The wafer surface polishing device comprises a polishing processing platform, a polishing processing groove is arranged on the table top of the polishing processing platform, a polishing disc mounting groove is arranged on the bottom surface of the polishing processing groove, a polishing disc is arranged in the polishing disc mounting groove, the polishing disc is transmission-connected to the polishing motor below, and the polishing motor drives the polishing disc to rotate.

3. The silicon carbide wafer polishing device according to claim 2, characterized in that The polishing disc comprises a disc body, a polishing cloth is wrapped on the polishing end of the disc body, a cerium oxide polishing liquid filling port is opened on the inner groove wall of the polishing treatment groove, and the cerium oxide polishing liquid filling port is connected to the polishing liquid supply tank.

4. The silicon carbide wafer polishing device according to claim 2, characterized in that The polishing mechanical arm is also provided with a suction cup rotation driving component, and the suction cup rotation driving component drives the wafer suction cup to rotate.

5. The silicon carbide wafer polishing device according to claim 1, characterized in that The polishing robot arm includes a rotating column, the upper end of which is provided with four suction cup cantilevers which are equidistantly arranged along the circumference, the far end of the suction cup cantilever is provided with the wafer suction cup, and four cantilever lifting mechanisms are provided in the rotating column, the cantilever lifting mechanisms drive the corresponding suction cup cantilever to lift and lower, and the rotating column drives the wafer suction cup on the suction cup cantilever to circulate among the set stations of the loading device, the wafer surface plasma softening treatment device, the wafer surface polishing device, and the unloading device.

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