Semiconductor device structure forming method, photosensitive component, sensor, electronic device

Abstract

The present disclosure relates to a method for forming a semiconductor device structure, a photosensitive component, a sensor, and an electronic device. The method includes: forming an implantation mask on a substrate; performing a first ion implantation, K second ion implantations, and K third ion implantations on one side of the implantation mask to form a P+-type doped region with a first depth and K stacked doped region groups, each doped region group including a first N-type doped region and a P-type doped region; performing a fourth ion implantation on the other side of the implantation mask to form a second N-type doped region; removing the implantation mask and forming an electrode layer at the position of the implantation mask to obtain a semiconductor device structure, and then obtaining a photosensitive component, thereby realizing the collection and separation of light energy in multiple frequency bands. By cooperating with a Bayer color filter, the collection and separation of light energy in multiple frequency bands can be realized with higher resolution.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a method for forming a semiconductor device structure, a photosensitive component, a sensor, and an electronic device. Background Art

[0002] Light sensors play an irreplaceable role in the field of image acquisition. Known camera devices and image acquisition devices all contain light sensors to sense light energy and convert the light energy into electrical signals.

[0003] In some scenarios, such as security, image acquisition devices need to effectively monitor their coverage area both day and night. Therefore, security monitoring image acquisition devices often incorporate infrared light sources. During nighttime security monitoring, the image acquisition device activates the infrared light source, allowing its image acquisition module to capture images by collecting infrared light. Therefore, when used in security monitoring cameras, the image acquisition device incorporates a filter. Figure 1a and Figure 1b The first and second diagrams of the filter array are shown respectively. As shown in 1a, the filter unit can be a Bayer filter. On the other hand, as shown in Figure 1b As shown, the filter unit may be an RGB-Ir filter.

[0004] Based on practical experience, the photosensor located below the red filter region of a Bayer filter simultaneously senses red and infrared light, generating corresponding photocurrents. However, the subsequent processing circuitry cannot further separate the received photocurrents into a first photocurrent corresponding to red light and a second photocurrent corresponding to red light. In other words, the Bayer filter scheme simultaneously captures red visible light and infrared light signals and cannot separate them, which can easily cause interference. In the RGB-Ir filter scheme, the photosensor located below the red filter region of the RGB-Ir filter senses red light, generating a first photocurrent corresponding to red light. Furthermore, the photosensor located below the infrared filter region of the RGB-Ir filter senses infrared light, generating a second photocurrent corresponding to infrared light. However, the RGB-Ir filter scheme places infrared pixels separately in a limited space, substantially reducing resolution. Therefore, compared to an image acquisition device using an RGB-Ir filter, an image acquisition device using a Bayer filter has a higher resolution.

[0005] Therefore, there is an urgent need to propose a technical solution that can collect and separate light energy in multiple frequency bands with higher resolution. Summary of the Invention

[0006] In view of this, the present disclosure provides a method for forming a semiconductor device structure, the method comprising:

[0007] forming an implantation mask on the substrate;

[0008] Performing one first ion implantation, K second ion implantations, and K third ion implantations on one side of the implantation mask to form a P+-type doping region having a first depth, and K stacked doping region groups, each doping region group including a first N-type doping region having a second depth greater than the first depth, and a P-type doping region having a third depth greater than the second depth, wherein K is a positive integer, and the doping depths of each doping region group increase sequentially;

[0009] Performing a fourth ion implantation on the other side of the implantation mask to form a second N-type doped region;

[0010] The implantation mask is removed, and an electrode layer is formed at the location of the implantation mask.

[0011] In a possible implementation, K is 1, and the doping depth of the second N-type doping region is a fourth depth, which is between the first depth and the second depth.

[0012] In a possible implementation, the substrate is a P-type substrate or an N-type substrate including a P-type well.

[0013] In a possible implementation, the material of the substrate includes any one of silicon Si, silicon carbide SiC, gallium nitride GaN, and gallium arsenide GaAs.

[0014] According to another aspect of the present disclosure, a photosensitive component is provided, comprising:

[0015] substrate;

[0016] A P+ type doped region is disposed in the substrate and has a first depth;

[0017] K stacked doped region groups are disposed in the substrate, each doped region group including a first N-type doped region having a second depth greater than the first depth, and a P-type doped region having a third depth greater than the second depth, wherein K is a positive integer, and the doping depths of the doped region groups increase sequentially;

[0018] a second N-type doped region, disposed in the substrate;

[0019] The electrode layer is disposed on the substrate and located between the first N-type doping region and the second N-type doping region.

[0020] In a possible implementation, K is 1, and the doping depth of the second N-type doping region is a fourth depth, which is between the first depth and the second depth.

[0021] In a possible implementation, the substrate is a P-type substrate or an N-type substrate including a P-type well, and the material of the substrate includes any one of silicon Si, silicon carbide SiC, gallium nitride GaN, and gallium arsenide GaAs.

[0022] In one possible implementation, when the electrode layer of the photosensitive component receives voltages in different voltage intervals, the photosensitive component is used to sense light in a band corresponding to the voltage interval and generate corresponding photocurrent, wherein each voltage interval corresponds to each band of light.

[0023] In one possible implementation, when the electrode layer of the photosensitive component receives a voltage less than a first preset voltage, the photosensitive component is used to sense visible light to generate a first photocurrent; or, when the electrode layer of the photosensitive component receives a voltage greater than the first preset voltage, the photosensitive component is used to simultaneously sense visible light and infrared light to generate a second photocurrent.

[0024] In a possible implementation, the photosensitive component is obtained according to the semiconductor device structure forming method.

[0025] According to another aspect of the present disclosure, a sensor is provided, comprising the photosensitive component as described.

[0026] According to another aspect of the present disclosure, an electronic device is provided, comprising an image acquisition module, a readout circuit module, and a control module, wherein:

[0027] The image acquisition module includes a plurality of pixel units, each pixel unit includes a pixel circuit and the sensor;

[0028] The readout circuit module includes a readout circuit for collecting and outputting the photocurrent obtained by the sensor;

[0029] The control module is used for:

[0030] Applying a target voltage to the sensor so that the sensor senses the wavelength of light corresponding to the voltage interval to which the target voltage belongs, thereby generating a corresponding photocurrent.

[0031] When the sensor receives voltages in different voltage ranges, the photosensitive component is used to sense light in a band corresponding to the voltage range and generate corresponding photocurrent, wherein each voltage range corresponds to each band of light.

[0032] In a possible implementation, the control module is configured to:

[0033] outputting a target voltage less than a first preset voltage to a sensor, so that the sensor senses visible light to generate a first photocurrent; or

[0034] A target voltage greater than the first preset voltage is output to the sensor, so that the sensor senses visible light and infrared light to generate a second photocurrent.

[0035] In a possible implementation, the pixel unit is an active pixel unit or a passive pixel unit.

[0036] According to another aspect of the present disclosure, an information processing device is provided, which includes the electronic device.

[0037] In a possible implementation, the information processing device includes any one of a camera device, a face recognition device, a fingerprint recognition device, a palm print recognition device, and an iris recognition device.

[0038] The method for forming a semiconductor device structure in an embodiment of the present disclosure forms an injection mask on a substrate, performs a first ion injection, K second ion injections, and K third ion injections on one side of the injection mask to form a P+ type doping region with a first depth and a stacked group of K doping regions, performs a fourth ion injection on the other side of the injection mask to form a second N type doping region, removes the injection mask, and forms an electrode layer at the position of the injection mask. A semiconductor device structure can be obtained, and then a light sensing component can be obtained, thereby realizing the collection and separation of light energy in multiple frequency bands. By cooperating with a Bayer color filter, it is possible to realize the collection and separation of light energy in multiple frequency bands with higher resolution.

[0039] Further features and aspects of the present disclosure will become apparent from the following detailed description of exemplary embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate exemplary embodiments, features, and aspects of the disclosure and, together with the description, serve to explain the principles of the disclosure.

[0041] Figure 1a and Figure 1b The first and second views of the filter array are shown respectively.

[0042] Figure 2a A flow chart of a method for forming a semiconductor device structure according to an embodiment of the present disclosure is shown.

[0043] Figure 2bA schematic diagram of a photosensitive component according to an embodiment of the present disclosure is shown.

[0044] Figure 3a 、 Figure 3b 、 Figure 3c Schematic diagrams of simulations of the photosensitive component of the embodiment of the present disclosure in the initial state, when the first voltage is applied, and when the second voltage is applied are respectively shown. Figure 3d A schematic diagram of the longitudinal voltage distribution of the light absorption structure of the photosensitive component of an embodiment of the present disclosure is shown in the initial state, when the first voltage is applied, and when the second voltage is applied.

[0045] Figure 4 A schematic diagram of an electronic device according to an embodiment of the present disclosure is shown.

[0046] Figure 5 A schematic diagram of a pixel unit according to an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0047] Various exemplary embodiments, features, and aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. The same reference numerals in the accompanying drawings represent elements with the same or similar functions. Although various aspects of the embodiments are shown in the accompanying drawings, the drawings are not necessarily drawn to scale unless otherwise indicated.

[0048] In the description of the present disclosure, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure.

[0049] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. Throughout the present disclosure, "plurality" means two or more, unless otherwise specifically defined.

[0050] In this disclosure, unless otherwise expressly specified or limited, terms such as "mounted," "connected," "connect," and "fixed" should be understood broadly. For example, they may refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal connections between two components or interactions between two components. Those skilled in the art will understand the specific meanings of these terms in this disclosure based on specific circumstances.

[0051] The term "and / or" herein simply describes an association relationship between associated objects, indicating that three relationships can exist. For example, "A and / or B" can represent the existence of three situations: A alone, A and B simultaneously, and B alone. Furthermore, the term "at least one" herein refers to any combination of at least two of any one or more of a plurality of items. For example, "at least one of A, B, and C" can represent any one or more elements selected from the set consisting of A, B, and C.

[0052] See also Figure 2a , Figure 2a A flow chart of a method for forming a semiconductor device structure according to an embodiment of the present disclosure is shown.

[0053] See also Figure 2b , Figure 2b A schematic diagram of a photosensitive component according to an embodiment of the present disclosure is shown.

[0054] like Figure 2a 、 Figure 2b As shown, the method includes:

[0055] Step S11, forming an implantation mask on the substrate D10;

[0056] Step S12, performing one first ion implantation, K second ion implantations, and K third ion implantations on one side of the implantation mask to form a P+-type doping region D11 having a first depth, and K stacked doping region groups, each doping region group including a first N-type doping region D12 having a second depth greater than the first depth, and a P-type doping region D13 having a third depth greater than the second depth, wherein K is a positive integer, and the doping depths of the doping region groups increase sequentially;

[0057] Step S13, performing a fourth ion implantation on the other side of the implantation mask to form a second N-type doped region D14;

[0058] Step S14: removing the implantation mask and forming an electrode layer D15 at the location of the implantation mask.

[0059] The method for forming a semiconductor device structure in an embodiment of the present disclosure forms an injection mask on a substrate, performs a first ion injection, K second ion injections, and K third ion injections on one side of the injection mask to form a P+ type doping region with a first depth and a stacked group of K doping regions, performs a fourth ion injection on the other side of the injection mask to form a second N type doping region, removes the injection mask, and forms an electrode layer at the position of the injection mask. A semiconductor device structure can be obtained, and then a light sensing component can be obtained, thereby realizing the collection and separation of light energy in multiple frequency bands. By cooperating with a Bayer color filter, it is possible to realize the collection and separation of light energy in multiple frequency bands with higher resolution.

[0060] The embodiment of the present disclosure does not limit the type of substrate D10. In one possible implementation, the substrate D10 is a P-type substrate or an N-type substrate containing a P-type well. The material of the substrate D10 includes any one of silicon Si, silicon carbide SiC, gallium nitride GaN, and gallium arsenide GaAs.

[0061] In one example, the embodiment of the present disclosure can form an injection mask in the surface area of ​​the substrate D10. The embodiment of the present disclosure does not limit the specific type of the injection mask. For example, the injection mask can be a photoresist or a hard mask. The embodiment of the present disclosure does not limit the specific implementation method of forming the injection mask. For example, those skilled in the art can use the photolithography process in the related technology to form photoresist, or use the chemical vapor deposition process to generate a hard mask. For example, the specific position of the injection mask can be determined according to actual conditions. For example, it can correspond to the position of the electrode layer D15 of the photosensitive component.

[0062] The embodiments of the present disclosure do not limit the specific ion types, doses, and energies of the ion implantations in the first, second, and third ion implantations. Those skilled in the art may select and determine the ion types according to actual conditions and needs. For example, the first ion implantation may be performed with P-type ions (e.g., Al ions, boron ions, etc.), the second ion implantation may be performed with N-type ions (e.g., arsenic As ions, etc.), and the third ion implantation may be performed with P-type ions. For example, taking K as 1, the ion implanter may be operated to implant boron (B) ions into the substrate D10 from one side of the implantation mask at a first implantation energy to form a P+-type doped region D11 having a first depth; and to implant arsenic (As) ions into the substrate D10 at a second implantation energy greater than the first implantation energy to form the first N-type doped region D12 having the second depth within the substrate D10. Furthermore, the ion implanter may be operated to implant boron (B) ions into the substrate D10 at a third implantation energy greater than the second implantation energy to form the P-type doped region D13 having the third depth within the substrate D10. Of course, if K is greater than 1, subsequent operations can be performed to form a P+ type doping region D11 with a first depth, and K stacked doping region groups, each doping region group includes a first N type doping region D12 with a second depth and the second depth is greater than the first depth, and a P type doping region D13 with a third depth and the third depth is greater than the second depth, wherein K is a positive integer, and the doping depth of each doping region group increases sequentially.

[0063] The embodiments of the present disclosure do not limit the specific ion type, dosage, and energy of the ion implantation in the fourth ion implantation. Those skilled in the art can select and determine them according to actual conditions and needs. For example, the fourth ion implantation can be, for example, N-type ions (such as arsenic As ions, etc.). For example, the ion implanter can be operated to implant arsenic (As) ions into the substrate D10 on the other side of the implantation mask with a fourth implantation energy that is greater than the first implantation energy and less than the second implantation energy, thereby forming the second N-type doped region D14 with the fourth depth in the substrate D10.

[0064] For example, the embodiments of the present disclosure do not limit the specific implementation method of removing the injection mask. Those skilled in the art can adopt appropriate processes according to actual conditions and needs. For example, if the mask is a photoresist, it can be removed by a stripping process; if the mask is a hard mask, it can be removed by a wet etching process.

[0065] The embodiments of the present disclosure do not limit the specific size of K. Those skilled in the art may set the size of K according to the number of frequency bands of light that need to be detected or other needs. In one possible implementation, K is 1, and the doping depth of the second N-type doped region D14 is a fourth depth, which is between the first depth and the second depth.

[0066] The embodiment of the present disclosure can obtain the following by using the above semiconductor device structure forming method: Figure 2b The photosensitive components shown, such as Figure 2b As shown, the photosensitive component includes:

[0067] substrate D10;

[0068] A P+ doped region D11 is disposed in the substrate D10 and has a first depth;

[0069] K stacked doped region groups are disposed in the substrate D10, each doped region group including a first N-type doped region D12 having a second depth greater than the first depth, and a P-type doped region D13 having a third depth greater than the second depth, wherein K is a positive integer, and the doping depths of the doped region groups increase sequentially;

[0070] A second N-type doped region D14 is disposed in the substrate D10;

[0071] The electrode layer D15 is disposed on the substrate D10 and located between the first N-type doping region D12 and the second N-type doping region D14.

[0072] Through the photosensitive component, the embodiment of the present disclosure can realize the collection and separation of light energy in multiple frequency bands by applying voltages of different sizes to the electrode layer D15. By cooperating with the Bayer color filter, it can realize the collection and separation of light energy in multiple frequency bands with higher resolution.

[0073] like Figure 2b As shown, a first junction is formed between the P+ type doping region D11 and the first N type doping region D12, and a second junction is formed between the first N type doping region D12 and the P type doping region D13. On the other hand, the electrode layer D15 is formed on the substrate D10 and is relatively located between the first N type doping region and the second N type doping region D14. Exemplarily, the second N type doping region D14 can serve as a floating diffusion layer. According to this design, the P+ type doping region D11, the first N type doping region D12 and the P type doping region D13 become the light absorption structure of the photosensitive component.

[0074] It should be noted that the embodiments of the present disclosure are Figure 2b The case of K=1 is shown in FIG, but this should not be considered as limiting the embodiments of the present disclosure. In other embodiments, the photosensitive component may include more doping region groups. For example, a first N-type doping region D12 and a P-type doping region D13 may be further generated below the P-type doping region D13. In a possible implementation, as shown in FIG. Figure 2b As shown, K is 1, and the doping depth of the second N-type doping region D14 is a fourth depth, which is between the first depth and the second depth.

[0075] In a possible implementation, the substrate D10 is a P-type substrate D10 or an N-type substrate including a P-type well, and the material of the substrate D10 includes any one of silicon Si, silicon carbide SiC, gallium nitride GaN, and gallium arsenide GaAs.

[0076] In one possible implementation, when the electrode layer D15 of the photosensitive component receives voltages in different voltage intervals, the photosensitive component is used to sense light in a band corresponding to the voltage interval and generate corresponding photocurrent, wherein each voltage interval corresponds to each band of light.

[0077] The embodiments of the present disclosure do not limit the specific correspondence between voltage intervals and bands. Those skilled in the art may set it according to actual conditions and needs. For example, the correspondence between voltage intervals and bands may be as shown in Table 1.

[0078] Table 1

[0079] Voltage range <Vref1 >Vref1 Band Visible light Visible light + infrared light

[0080] Among them, Vref1 can be a first preset voltage, and its specific size is not limited in the embodiment of the present disclosure. Of course, Table 1 is only an example and should not be regarded as a limitation of the embodiment of the present disclosure. In other embodiments, those skilled in the art can set the corresponding relationship according to actual conditions and needs.

[0081] Through the unique structure of the photosensitive component, in the embodiment of the present disclosure, when the electrode layer D15 of the photosensitive component receives voltages in different voltage ranges, the photosensitive component can sense light in a band corresponding to the voltage range and generate a corresponding photocurrent. For example, when the electrode layer D15 of the photosensitive component receives a first voltage less than the first preset voltage Vref1, the photosensitive component is used to sense visible light to generate a first photocurrent; or, when the electrode layer D15 of the photosensitive component receives a second voltage greater than the first preset voltage Vref1, the photosensitive component is used to simultaneously sense visible light and infrared light to generate a second photocurrent.

[0082] The photosensitive component of the disclosed embodiment, when a first voltage is applied, senses visible light to generate a first photocurrent. When a second voltage greater than the first voltage is applied to the electrode layer D15, the photosensitive component simultaneously senses visible light and infrared light to generate a second photocurrent. With this design, a third photocurrent corresponding to infrared light can be obtained by performing a subtraction operation on the second photocurrent and the first photocurrent.

[0083] The following combination Figure 3a 、 Figure 3b 、 Figure 3c 、 Figure 3d and Figure 2b The photosensitivity principle of the photosensitive component of the embodiment of the present disclosure is exemplarily explained.

[0084] See also Figure 3a 、 Figure 3b 、 Figure 3c , Figure 3a 、 Figure 3b 、 Figure 3c Schematic diagrams of simulations of the photosensitive component of the embodiment of the present disclosure in the initial state, when the first voltage is applied, and when the second voltage is applied are respectively shown. Figure 3d A schematic diagram of the longitudinal voltage distribution of the light absorption structure of the photosensitive component of an embodiment of the present disclosure is shown in the initial state, when the first voltage is applied, and when the second voltage is applied.

[0085] Exemplarily, the simulation schematic diagram may be a TACD simulation schematic diagram, wherein TCAD is a semiconductor process simulation software (Technology Computer-Aided Design, TCAD).

[0086] For example, the correspondence between voltage intervals and bands may be as shown in Table 2.

[0087] Table 2

[0088] Voltage range 2～4V 4～7V Band Visible light Visible light + infrared light

[0089] In one example, if Figure 3a 、 Figure 3b and Figure 3d As shown, by applying a first voltage V1 (2-4V, such as the first preset voltage is 4V) to the electrode layer D15, the photosensitive component can be driven to sense visible light to generate a first photocurrent. Figure 2bAs shown, some electrons in the first N-type doped region of the light absorption structure (P+-type doped region D11, the first N-type doped region D12, and the P-type doped region D13) flow through the electrode layer D15 to the external readout circuit, causing the regional voltage of the first N-type doped region to increase. At this time, this high regional voltage causes a reverse bias to be formed between the first N-type doped region and the P+-type doped region, thereby forming a first depletion region on both sides of the first junction. At the same time, this high regional voltage also causes a reverse bias to be formed between the first N-type doped region and the P-type doped region, thereby forming a second depletion region on both sides of the second junction. In this case, the photosensitive component uses the first depletion region and the second depletion region to sense visible light to generate a first photocurrent. The depletion region is also called a space-charge region. In other words, when the first voltage is applied, the effective light absorption region is the depletion portion of the first N-type doped region and the P+-type doped region and the P-type doped region.

[0090] like Figure 3a 、 Figure 3c and Figure 3d As shown, by applying a second voltage V2 (4-7V) greater than the first voltage V1 to the electrode layer D15, the photosensitive component can be driven to simultaneously sense visible light and infrared light to generate a second photocurrent. It is worth noting that when the applied voltage rises from the first voltage V1 to the second voltage V2, the regional voltage of the first N-type doped region also increases, causing the second depletion region formed on both sides of the second junction to expand toward the P-type doped region, causing the space charge region to expand to the substrate D10. Since the substrate D10 is low in doping, the voltage decreases relatively slowly, causing the depth of the space charge region to expand from less than 1um to several microns, greatly expanding the effective absorption depth and greatly increasing the absorption of infrared light. Ultimately, the expanded second depletion region enables the light absorption structure to simultaneously sense visible light and infrared light to generate a second photocurrent.

[0091] After obtaining the first photocurrent and the second photocurrent, the external control module 13 can perform a subtraction operation on the second photocurrent and the first photocurrent to obtain a third photocurrent corresponding to infrared light. In this way, when used in conjunction with a Bayer filter, the embodiment of the present disclosure can perform high-resolution image acquisition at night by collecting infrared light. In addition, those skilled in the art can produce a larger number of first N-type doped regions D12 and P-type doped regions D13. By reasonably setting the correspondence between the voltage range and the light band, the photocurrent of more light bands can be collected and separated. This is not limited to the embodiment of the present disclosure.

[0092] According to another aspect of the present disclosure, a sensor is provided, comprising the photosensitive component as described.

[0093] See also Figure 4 , Figure 4 A schematic diagram of an electronic device according to an embodiment of the present disclosure is shown.

[0094] like Figure 4 As shown, the electronic device includes an image acquisition module 11, a readout circuit module 12, and a control module 13, wherein:

[0095] The image acquisition module 11 includes a plurality of pixel units 111, each pixel unit 111 includes a pixel circuit and the sensor;

[0096] The readout circuit module 12 includes a readout circuit for collecting and outputting the photocurrent obtained by the sensor;

[0097] The control module 13 is used to:

[0098] Applying a target voltage to the sensor so that the sensor senses the wavelength of light corresponding to the voltage interval to which the target voltage belongs, thereby generating a corresponding photocurrent.

[0099] When the sensor receives voltages in different voltage ranges, the photosensitive component is used to sense light in a band corresponding to the voltage range and generate corresponding photocurrent, wherein each voltage range corresponds to each band of light.

[0100] The electronic device of the embodiment of the present disclosure applies a target voltage to the sensor through the control module 13, so that the sensor senses the light band corresponding to the voltage interval to which the target voltage belongs to generate a corresponding photocurrent, wherein when the sensor receives voltages in different voltage intervals, the photosensitive component is used to sense the light in the band corresponding to the voltage interval and generate a corresponding photocurrent, wherein each voltage interval has a corresponding relationship with each light band, so that the electronic device can collect and separate light energy of multiple frequency bands with a higher resolution.

[0101] For example, when the electronic device is used in conjunction with a Bayer filter, it can capture high-resolution images at night by collecting infrared light.

[0102] In a possible implementation, the control module 13 may be configured to:

[0103] outputting a target voltage less than a first preset voltage to a sensor, so that the sensor senses visible light to generate a first photocurrent; or

[0104] A target voltage greater than the first preset voltage is output to the sensor, so that the sensor senses visible light and infrared light to generate a second photocurrent.

[0105] For example, if the voltage interval of the target voltage less than the first preset voltage corresponds to the visible light band, and the voltage interval of the target voltage greater than the first preset voltage corresponds to the visible light band + infrared light band, then when the control module 13 obtains the second photocurrent and the first photocurrent, it can subtract the second photocurrent from the first photocurrent to obtain the photocurrent corresponding to the infrared light, thereby realizing the collection and separation of light energy in the visible light and infrared light bands with higher resolution.

[0106] The embodiment of the present disclosure does not limit the specific implementation of the readout circuit module 1212 , nor does it limit the specific implementation of the control module 13 .

[0107] Exemplarily, the control module 13 can be implemented using a processing component. In one example, the processing component includes but is not limited to a separate processor, or a discrete component, or a combination of a processor and a discrete component. The processor may include a controller in an electronic device having an instruction execution function. The processor may be implemented in any appropriate manner, for example, by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components. Inside the processor, the executable instructions may be executed by hardware circuits such as logic gates, switches, application-specific integrated circuits (ASICs), programmable logic controllers, and embedded microcontrollers.

[0108] See also Figure 5 , Figure 5 A schematic diagram of a pixel unit according to an embodiment of the present disclosure is shown.

[0109] In one example, if Figure 5 As shown, the pixel unit 111 includes a pixel circuit 11P and a light sensor 11D. Exemplarily, the pixel unit 111 can be a passive pixel sensor (PPS) unit or an active pixel sensor (APS) unit.

[0110] In one example, if Figure 5The pixel unit 111 shown is an APS unit, and the pixel circuit 11P includes: a first switch component 1S1, a second switch component 1S2, and a third switch component 1S3. Exemplarily, the first switch component 1S1, the second switch component 1S2, and the third switch component 1S3 can all be NMOS transistors, wherein the drain of the first switch component 1S1 and the drain of the second switch component 1S2 receive a power supply voltage VDD, the source of the first switch component 1S1 is connected to the gate of the second switch component 1S2 and the photosensor, and the source of the second switch component 1S2 is connected to the drain of the third switch component 1S3.

[0111] In one example, if Figure 5 As shown, the light sensor 11D may be a photodiode.

[0112] The embodiments of the present disclosure do not limit the specific type of electronic device. For example, the electronic device may be a terminal including a camera or other acquisition device implemented with the photosensitive element provided by the embodiments of the present disclosure. In one example, the terminal is also referred to as user equipment (UE), mobile station (MS), mobile terminal (MT), etc., and is a device that provides image acquisition, voice and / or data connectivity to users, such as a handheld device with wireless connection function, a vehicle-mounted device, etc. At present, some examples of terminals include: mobile phones, tablet computers, laptop computers, PDAs, mobile Internet devices (MIDs), wearable devices, virtual reality (VR) devices, augmented reality (AR) devices, wireless terminals in industrial control, wireless terminals in self-driving, wireless terminals in remote medical surgery, wireless terminals in smart grids, wireless terminals in transportation safety, wireless terminals in smart cities, wireless terminals in smart homes, wireless terminals in Internet of Vehicles, etc. According to another aspect of the present disclosure, an information processing device is provided, which includes the electronic device described above.

[0113] In a possible implementation, the information processing device includes any one of a camera device, a face recognition device, a fingerprint recognition device, a palm print recognition device, and an iris recognition device.

[0114] While various embodiments of the present disclosure have been described above, the above descriptions are illustrative, non-exhaustive, and not intended to be limiting of the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is selected to best explain the principles of the embodiments, their practical applications, or improvements to existing technologies, or to enable others skilled in the art to understand the embodiments disclosed herein.

Claims

1. A method for forming a semiconductor device structure, characterized in that: The method comprises: forming an implantation mask on the substrate; Performing one first ion implantation, K second ion implantations, and K third ion implantations on one side of the implantation mask to form a P+-type doped region having a first depth, and K doped region groups, each doped region group including a first N-type doped region having a second depth greater than the first depth, and a P-type doped region having a third depth greater than the second depth, wherein K is greater than 1 and is a positive integer, the doped region groups are stacked, and the doping depths of the doped region groups are increased sequentially; Performing a fourth ion implantation on the other side of the implantation mask to form a second N-type doped region; The implantation mask is removed, and an electrode layer is formed at the location of the implantation mask.

2. The method according to claim 1, characterized in that The substrate is a P-type substrate or an N-type substrate including a P-type well.

3. The method according to claim 1, characterized in that The material of the substrate includes any one of silicon Si, silicon carbide SiC, gallium nitride GaN and gallium arsenide GaAs.

4. A photosensitive component, characterized in that: The photosensitive component includes: substrate; A P+ type doped region is disposed in the substrate and has a first depth; K doped region groups are disposed in the substrate, each doped region group including a first N-type doped region having a second depth greater than the first depth, and a P-type doped region having a third depth greater than the second depth, wherein K is greater than 1 and is a positive integer, the doped region groups are stacked, and the doping depths of the doped region groups increase sequentially; a second N-type doped region, disposed in the substrate; The electrode layer is disposed on the substrate and located between the first N-type doping region and the second N-type doping region.

5. The photosensitive component according to claim 4, characterized in that The substrate is a P-type substrate or an N-type substrate including a P-type well, and the material of the substrate includes any one of silicon Si, silicon carbide SiC, gallium nitride GaN and gallium arsenide GaAs.

6. The photosensitive component according to claim 4, characterized in that When the electrode layer of the photosensitive component receives voltages in different voltage intervals, the photosensitive component is used to sense light in a band corresponding to the voltage interval and generate corresponding photocurrent, wherein each voltage interval corresponds to each band of light.

7. The photosensitive component according to claim 4 or 6, characterized in that: When the electrode layer of the photosensitive component receives a voltage less than a first preset voltage, the photosensitive component is used to sense visible light to generate a first photocurrent; or, when the electrode layer of the photosensitive component receives a voltage greater than the first preset voltage, the photosensitive component is used to simultaneously sense visible light and infrared light to generate a second photocurrent.

8. The photosensitive component according to claim 4, characterized in that The photosensitive component is obtained according to the semiconductor device structure forming method according to any one of claims 1 to 3.

9. A sensor, characterized in that: Comprising the photosensitive component as described in any one of claims 4 to 8.

10. An electronic device, characterized in that: It includes an image acquisition module, a readout circuit module, and a control module, wherein: The image acquisition module includes a plurality of pixel units, each pixel unit includes a pixel circuit and the sensor according to claim 9; The readout circuit module includes a readout circuit for collecting and outputting the photocurrent obtained by the sensor; The control module is used for: Applying a target voltage to the sensor so that the sensor senses the wavelength of light corresponding to the voltage interval to which the target voltage belongs, thereby generating a corresponding photocurrent. When the sensor receives voltages in different voltage ranges, the photosensitive component is used to sense light in a band corresponding to the voltage range and generate corresponding photocurrent, wherein each voltage range corresponds to each band of light.

11. The electronic device according to claim 10, characterized in that The control module is used for: outputting a target voltage less than a first preset voltage to a sensor, so that the sensor senses visible light to generate a first photocurrent; or A target voltage greater than the first preset voltage is output to the sensor, so that the sensor senses visible light and infrared light to generate a second photocurrent.

12. The electronic device according to claim 10, wherein: The pixel unit is an active pixel unit or a passive pixel unit.

13. An information processing device, characterized in that: The information processing device includes the electronic device according to any one of claims 10 to 12.

14. The information processing device according to claim 13, wherein: The information processing device includes any one of a camera device, a face recognition device, a fingerprint recognition device, a palm print recognition device, and an iris recognition device.

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