Semiconductor device cutting methods
By coating the edge of the ceramic substrate with an anti-adhesion layer and reducing its stickiness, the deformation and stress problems caused by vacuum suction during the cutting process of the ceramic substrate are solved, and a high-yield cutting effect is achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BEIJING METAMATERIALS INFORMATION TECH CO LTD
- Filing Date
- 2022-10-09
- Publication Date
- 2026-05-26
AI Technical Summary
In the prior art, during the cutting process of ceramic substrates, the edge of the substrate in contact with the UV film is subjected to large deformation and stress due to the vacuum suction, which leads to cracks or fractures and affects the product yield.
A non-sticking adhesive layer is coated on the edge of the ceramic substrate, and an adhesive ultraviolet film is covered on it. The stickiness is reduced by heating or ultraviolet photolysis. The movement path of the heating source or the ultraviolet photolysis lamp is controlled by a robotic arm to reduce stress and deformation during vacuum fixing.
It effectively avoids cracks and fractures at the edges of ceramic substrates, improving product yield by reducing deformation and stress during vacuum curing.
Smart Images
Figure CN115527870B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor packaging technology, and more specifically to a method for cutting semiconductor devices. Background Technology
[0002] A traditional cutting disc consists of a base and a rubber seat. The base is plate-shaped, and the rubber seat is adhered to it. The rubber seat has an array of suction nozzles arranged on it, each with a vacuum hole in the center that connects to a vacuum channel. This vacuum hole is used to hold the ceramic substrate to be cut by suction. During cutting, the ceramic substrate is placed on a processing platform, and a cutting tool, such as a diamond tool, is used to scribe the substrate.
[0003] In existing processing technologies, such as Figure 1 As shown, a UV adhesive film is typically applied to the side of a ceramic substrate containing the individual chip, primarily for protecting the chip during wafer dicing and for subsequent pick-up processes. However, when the ceramic substrate to be diced is fixed onto the nozzle array (see...),... Figure 2 Due to the vacuum suction, the part of the ceramic substrate that comes into contact with the UV film will undergo large deformation and stress due to the pulling, which will cause cracks or even breakage of the ceramic substrate, affecting the yield of the product. Summary of the Invention
[0004] A primary objective of this application is to overcome at least one of the deficiencies of the prior art and to provide a method for cutting semiconductor devices that can avoid stress at the edges of ceramic substrates, thereby preventing cracks or even breakage.
[0005] To achieve the above objectives, this application adopts the following technical solution:
[0006] According to one aspect of this application, a method for cutting a semiconductor device is provided. The semiconductor device includes a ceramic substrate and an electronic chip, the electronic chip being disposed on the ceramic substrate and encapsulated with an epoxy resin layer. In the vertical direction, the projected area of the epoxy resin layer is smaller than the projected area of the ceramic substrate, and the edge of the epoxy resin layer is at a distance from the edge of the ceramic substrate. The cutting method includes the following steps:
[0007] S1: A non-adhesive layer is coated on the edge of the ceramic substrate. The non-adhesive layer and the epoxy resin layer are located on the same side of the ceramic substrate, and the non-adhesive layer is horizontally away from the epoxy resin layer.
[0008] S2: An adhesive ultraviolet film is applied to the epoxy resin layer and the anti-adhesion adhesive layer, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film is greater than or equal to the projected area of the ceramic substrate.
[0009] S3: Treat the adhesive layer to reduce tack;
[0010] S4: Fix the adhesive ultraviolet film onto the base and cut the ceramic substrate.
[0011] According to one embodiment of this application, the anti-tack layer is a heat-resistant anti-tack layer or an ultraviolet anti-tack layer, wherein the tackiness of the anti-tack layer is reduced by heating or irradiation with an ultraviolet light de-adhesive lamp.
[0012] According to one embodiment of this application, the thickness of the heat-resistant adhesive layer is 5 to 1000 μm.
[0013] According to one embodiment of this application, the thickness of the ultraviolet anti-adhesive layer is 5 to 1000 μm.
[0014] According to one embodiment of this application, the heat-resistant adhesive layer is composed of a curing agent, a solvent, a self-expanding microsphere foaming agent, and a colorant.
[0015] According to one embodiment of this application, the curing agent is an isophorone diisocyanate blocked isocyanate curing agent; the solvent is a mixture of liquid ammonia, liquid sulfur dioxide and thionyl chloride; the particle size of the self-expanding microspheres in the self-expanding microsphere foaming agent is 18 μm; the color powder is one organic color powder or a mixture of multiple organic color powders or one inorganic color powder or a mixture of multiple inorganic color powders.
[0016] According to one embodiment of this application, in step S3, for ceramic substrates of different sizes and shapes to be cut, a robotic arm is used to control the travel path of the heating source or the ultraviolet light de-adhesive lamp to reduce the stickiness of the de-adhesive layer.
[0017] According to another aspect of this application, a method for cutting a semiconductor device is provided. The semiconductor device includes a ceramic substrate and an electronic chip. The electronic chip is disposed on the ceramic substrate and encapsulated with an epoxy resin layer. In the vertical direction, the projected area of the epoxy resin layer is smaller than the projected area of the ceramic substrate, and the edge of the epoxy resin layer is at a distance from the edge of the ceramic substrate. The cutting method includes the following steps:
[0018] S1: An elastomer is attached to the edge of the ceramic substrate, the elastomer and the epoxy resin layer are located on the same side of the ceramic substrate, and the elastomer is horizontally away from the epoxy resin layer;
[0019] S2: An adhesive ultraviolet film is applied to the epoxy resin layer and the elastomer, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film is greater than or equal to the projected area of the ceramic substrate.
[0020] S3: Fix the adhesive ultraviolet film onto the base and cut the ceramic substrate.
[0021] According to one embodiment of this application, the width of the elastomer is 1 to 5 mm.
[0022] According to one embodiment of this application, the height of the elastomer is 0.1 to 1 mm.
[0023] As can be seen from the above technical solution, the advantages and positive effects of the semiconductor device cutting method proposed in this application are as follows:
[0024] This application discloses a method for cutting a semiconductor device, wherein the semiconductor device includes a ceramic substrate and an electronic chip. The electronic chip is disposed on the ceramic substrate and encapsulated with an epoxy resin layer. In the vertical direction, the projected area of the epoxy resin layer is smaller than the projected area of the ceramic substrate, and the edge of the epoxy resin layer is at a distance from the edge of the ceramic substrate. The cutting method includes the following steps: coating an anti-adhesion layer on the edge of the ceramic substrate, the anti-adhesion layer and the epoxy resin layer being located on the same side of the ceramic substrate, the anti-adhesion layer being horizontally away from the epoxy resin layer; maintaining a horizontal distance between the anti-adhesion layer and the epoxy resin layer to prevent the epoxy resin layer from being affected by the anti-adhesion layer; and covering the epoxy resin layer and the anti-adhesion layer with an adhesive ultraviolet film, wherein in the vertical direction, the projected area of the adhesive ultraviolet film is greater than or equal to the projected area of the ceramic substrate; the adhesive ultraviolet film is used to fix the ceramic substrate to a base for subsequent cutting processes. The adhesive layer is treated to reduce its tackiness. Reducing the tackiness of the adhesive layer decreases the adhesion between the ceramic substrate edge and the adhesive UV film, thereby reducing the deformation and stress caused by the stretching of the ceramic edge in contact with the UV film due to vacuuming, and preventing cracks or even breakage at the ceramic substrate edge. The adhesive UV film is then fixed to the base and the ceramic substrate is cut. Attached Figure Description
[0025] The above and other features and advantages of this application will become more apparent from a detailed description of exemplary embodiments thereof with reference to the accompanying drawings.
[0026] Figure 1 This is a schematic diagram of a semiconductor device cutting method in the prior art.
[0027] Figure 2 This is a schematic diagram of a semiconductor device cutting method in the prior art.
[0028] Figure 3 This is a schematic diagram of the semiconductor device cutting method of this application.
[0029] Figure 4 This is a schematic diagram of the semiconductor device cutting method of this application.
[0030] Figure 5 This is a schematic diagram of ultraviolet lamp irradiation used in the semiconductor device cutting method of this application.
[0031] Figure 6 This is a schematic diagram of another embodiment of the semiconductor device cutting method of this application.
[0032] The reference numerals in the attached figures are explained as follows:
[0033] 101-Ceramic substrate;
[0034] 201 - Epoxy resin layer;
[0035] 301 - Adhesive UV film;
[0036] 401 - Base;
[0037] 501 - Anti-tack adhesive layer;
[0038] 601-Ring UV Lamp;
[0039] 701 - Elastomer;
[0040] A - Vacuuming direction. Detailed Implementation
[0041] Typical embodiments embodying the features and advantages of this application will be described in detail in the following description. It should be understood that this application can have various variations in different embodiments, all of which do not depart from the scope of this application, and the descriptions and drawings therein are for illustrative purposes only and not intended to limit this application.
[0042] In the following description of various exemplary embodiments of this application, reference is made to the accompanying drawings, which form part of this application, and which illustrate by way of example different exemplary structures, systems, and steps that can implement various aspects of this application. It should be understood that other specific solutions to components, structures, exemplary devices, systems, and steps may be used, and structural and functional modifications may be made without departing from the scope of this application. Furthermore, while the terms “upper,” “middle,” “inner,” etc., may be used in this specification to describe different exemplary features and elements of this application, these terms are used herein only for convenience, such as the orientation according to the examples described in the accompanying drawings. Nothing in this specification should be construed as requiring a specific three-dimensional orientation of the structure to fall within the scope of this application.
[0043] To make the above-mentioned objectives, features and advantages of this application readily apparent, specific embodiments of this application will be described in detail below with reference to the accompanying drawings.
[0044] like Figures 3 to 5As shown, the semiconductor device cutting method of this application includes a ceramic substrate 101 and an electronic chip (not shown in the figure). The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0045] S1: An anti-adhesion layer 501 is coated on the edge of the ceramic substrate 101. The anti-adhesion layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101, and the anti-adhesion layer 501 is horizontally away from the epoxy resin layer 201.
[0046] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0047] S3: Treat the anti-tack adhesive layer 501 to reduce tack;
[0048] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0049] The heat-resistant adhesive layer is applied to the part where the UV film contacts the ceramic substrate. When vacuuming and fixing, heating the part where the UV film contacts the ceramic substrate reduces the stickiness of the heat-resistant adhesive, preventing excessive stretching of the rigid ceramic substrate by the UV film and thus avoiding large deformation and stress. This prevents the ceramic substrate from cracking or breaking, and improves product yield.
[0050] In this embodiment, the anti-tack layer 501 is a heat-resistant anti-tack layer or an ultraviolet-resistant anti-tack layer, which is achieved by heating or irradiation with an ultraviolet light debonding lamp (e.g., ...). Figure 5 The adhesive strength of the anti-tack layer is reduced by means of (as shown). Heating or irradiating the anti-tack layer with ultraviolet light can reduce the adhesion between the anti-tack layer and the ceramic substrate when needed, thereby reducing excessive stress and deformation caused by the height difference between different materials during vacuum fixing.
[0051] In this embodiment, the thickness of the heat-resistant adhesive layer is 5–1000 μm, preferably 10–200 μm. The ultraviolet-resistant adhesive layer is a UV-sensitive adhesive layer, and its thickness is 5–1000 μm, preferably 5–40 μm. A certain thickness of adhesive layer can compensate for the height difference caused by the absence of an epoxy resin layer at the edge of the ceramic substrate. Furthermore, during vacuum fixing, by reducing the adhesiveness of the adhesive, excessive stretching of the rigid ceramic substrate at the UV film contact point can be avoided, preventing excessive deformation and stress, and thus preventing cracks or breakage of the ceramic substrate.
[0052] In this embodiment, the heat-resistant adhesive layer is composed of a curing agent, a solvent, a self-expanding microsphere foaming agent, and color powder. The curing agent is an isophorone diisocyanate blocked isocyanate curing agent (IPDI blocked isocyanate curing agent); the solvent is a mixture of liquid ammonia, liquid sulfur dioxide, and thionyl chloride; the self-expanding microsphere foaming agent contains microspheres with a particle size of 18 μm; the color powder is one organic color powder or a mixture of multiple organic color powders, or one inorganic color powder or a mixture of multiple inorganic color powders. Examples include phthalocyanine blue, permanent yellow, lightfast red, phthalocyanine green, pigment yellow, etc. The heat-resistant adhesive layer composed of the curing agent, solvent, self-expanding microsphere foaming agent, and color powder can reduce viscosity upon heating, thereby reducing the adhesion between the viscous UV film and the ceramic substrate, preventing stress cracks caused by the viscous UV film pulling on the ceramic substrate.
[0053] In this embodiment, in step S3, for ceramic substrates of different sizes and shapes to be cut, a robotic arm is used to control the path of the heating source or the ultraviolet light debonding lamp to reduce the viscosity of the anti-tack adhesive layer. Reducing the viscosity of the anti-tack adhesive layer by controlling the path of the heating source or the ultraviolet light debonding lamp with a robotic arm is highly automated, easy to control, and precise.
[0054] like Figure 6 As shown, another embodiment of the semiconductor cutting method of this application includes a semiconductor device comprising a ceramic substrate 101 and an electronic chip (not shown). The electronic chip is disposed on the ceramic substrate 101, and an epoxy resin layer 201 is formed on the electronic chip. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0055] S1: An elastomer 701 is attached to the edge of the ceramic substrate 101. The elastomer 701 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101, and the elastomer 701 is horizontally away from the epoxy resin layer 201.
[0056] S2: An adhesive ultraviolet film 301 is applied to the epoxy resin layer 201 and the elastomer 701, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0057] S3: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0058] The elastomer is attached to the edge where the UV film contacts the ceramic substrate. When vacuum is applied for fixation, the elastomer can absorb some of the pulling force exerted by the UV film on the ceramic substrate. This prevents the UV film from excessively pulling the rigid ceramic substrate, which would cause large deformation and stress, thus preventing cracks or breaks in the ceramic substrate and improving product yield.
[0059] In this embodiment, the width of the elastomer is 1-5 mm, and can be selected from 1.5 mm, 2 mm, 3 mm, 3.5 mm, 4.2 mm, 4.7 mm, etc. Selecting an appropriate elastomer height can effectively absorb the tensile force of the UV film on the ceramic substrate.
[0060] In this embodiment, the height of the elastomer is 0.1–1 mm, and can be selected from 0.2 mm, 0.3 mm, 0.5 mm, 0.7 mm, 0.8 mm, 0.9 mm, etc. Selecting an appropriate elastomer height can effectively absorb the tensile force of the UV film on the ceramic substrate.
[0061] It should be noted that the semiconductor device dicing methods shown in the accompanying drawings and described in this specification are merely a few examples among many semiconductor device dicing methods that can employ the principles of this application. It should be clearly understood that the principles of this application are by no means limited to any details or components of the semiconductor device dicing methods shown in the accompanying drawings or described in this specification.
[0062] To further understand the content of this application, a detailed description of specific embodiments is now provided. It should be noted that, due to space limitations, only some embodiments are listed below, and the various parameters in the cutting method are not limited to the specific embodiments described below.
[0063] Example 1
[0064] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0065] S1: An anti-tack layer 501 is coated on the edge of the ceramic substrate 101. The anti-tack layer 501 is a heat-resistant anti-tack layer with a thickness of 10 μm. The heat-resistant anti-tack layer is composed of a curing agent, a solvent, a self-expanding microsphere foaming agent, and phthalocyanine blue. The anti-tack layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101, and the anti-tack layer 501 is horizontally away from the epoxy resin layer 201.
[0066] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0067] S3: Use a robotic arm to control the movement path of the heating source to process the anti-tack adhesive layer 501 to reduce its stickiness;
[0068] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0069] Example 2
[0070] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0071] S1: An anti-tack layer 501 is coated on the edge of the ceramic substrate 101. The anti-tack layer 501 is a heat-resistant anti-tack layer with a thickness of 30 μm. The heat-resistant anti-tack layer is composed of a curing agent, a solvent, a self-expanding microsphere foaming agent, and permanent yellow. The anti-tack layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101, and the anti-tack layer 501 is horizontally away from the epoxy resin layer 201.
[0072] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0073] S3: Use a robotic arm to control the movement path of the heating source to process the anti-tack adhesive layer 501 to reduce its stickiness;
[0074] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0075] Example 3
[0076] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0077] S1: An anti-tack layer 501 is coated on the edge of the ceramic substrate 101. The anti-tack layer 501 is a heat-resistant anti-tack layer with a thickness of 80 μm. The heat-resistant anti-tack layer is composed of a curing agent, a solvent, a self-expanding microsphere foaming agent, and a UV-resistant red adhesive. The anti-tack layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101, and the anti-tack layer 501 is horizontally away from the epoxy resin layer 201.
[0078] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0079] S3: Use a robotic arm to control the movement path of the heating source to process the anti-tack adhesive layer 501 to reduce its stickiness;
[0080] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0081] Example 4
[0082] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0083] S1: An anti-tack layer 501 is coated on the edge of the ceramic substrate 101. The anti-tack layer 501 is a heat-resistant anti-tack layer with a thickness of 110 μm. The heat-resistant anti-tack layer is composed of a curing agent, a solvent, a self-expanding microsphere foaming agent, and phthalocyanine green. The anti-tack layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101, and the anti-tack layer 501 is horizontally away from the epoxy resin layer 201.
[0084] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0085] S3: Use a robotic arm to control the movement path of the heating source to process the anti-tack adhesive layer 501 to reduce its stickiness;
[0086] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0087] Example 5
[0088] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0089] S1: An anti-tack layer 501 is coated on the edge of the ceramic substrate 101. The anti-tack layer 501 is a heat-resistant anti-tack layer with a thickness of 150 μm. The heat-resistant anti-tack layer is composed of a mixture of curing agent, solvent, self-expanding microsphere foaming agent, phthalocyanine green, and phthalocyanine blue. The anti-tack layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101, and the anti-tack layer 501 is horizontally away from the epoxy resin layer 201.
[0090] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0091] S3: Use a robotic arm to control the movement path of the heating source to process the anti-tack adhesive layer 501 to reduce its stickiness;
[0092] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0093] Example 6
[0094] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0095] S1: An anti-tack layer 501 is coated on the edge of the ceramic substrate 101. The anti-tack layer 501 is a heat-resistant anti-tack layer with a thickness of 180 μm. The heat-resistant anti-tack layer is composed of a mixture of curing agent, solvent, self-expanding microsphere foaming agent, permanent yellow, and phthalocyanine blue. The anti-tack layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101, and the anti-tack layer 501 is horizontally away from the epoxy resin layer 201.
[0096] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0097] S3: Use a robotic arm to control the movement path of the heating source to process the anti-tack adhesive layer 501 to reduce its stickiness;
[0098] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0099] Example 7
[0100] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0101] S1: An anti-adhesion layer 501 is coated on the edge of the ceramic substrate 101. The anti-adhesion layer 501 is an ultraviolet anti-adhesion layer with a thickness of 5μm. The anti-adhesion layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101. The anti-adhesion layer 501 is away from the epoxy resin layer 201 in the horizontal direction.
[0102] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0103] S3: Use a robotic arm to control the path of the UV light de-adhesive lamp to process the anti-tack layer 501 to reduce its stickiness;
[0104] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0105] Example 8
[0106] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0107] S1: An anti-adhesion layer 501 is coated on the edge of the ceramic substrate 101. The anti-adhesion layer 501 is an ultraviolet anti-adhesion layer with a thickness of 10 μm. The anti-adhesion layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101. The anti-adhesion layer 501 is away from the epoxy resin layer 201 in the horizontal direction.
[0108] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0109] S3: Use a robotic arm to control the path of the UV light de-adhesive lamp to process the anti-tack layer 501 to reduce its stickiness;
[0110] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0111] Example 9
[0112] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0113] S1: An anti-adhesion layer 501 is coated on the edge of the ceramic substrate 101. The anti-adhesion layer 501 is an ultraviolet anti-adhesion layer with a thickness of 20 μm. The anti-adhesion layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101. The anti-adhesion layer 501 is away from the epoxy resin layer 201 in the horizontal direction.
[0114] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0115] S3: Use a robotic arm to control the path of the UV light de-adhesive lamp to process the anti-tack layer 501 to reduce its stickiness;
[0116] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0117] Example 10
[0118] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0119] S1: An anti-adhesion layer 501 is coated on the edge of the ceramic substrate 101. The anti-adhesion layer 501 is an ultraviolet anti-adhesion layer with a thickness of 30 μm. The anti-adhesion layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101. The anti-adhesion layer 501 is away from the epoxy resin layer 201 in the horizontal direction.
[0120] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0121] S3: Use a robotic arm to control the path of the UV light de-adhesive lamp to process the anti-tack layer 501 to reduce its stickiness;
[0122] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0123] Example 11
[0124] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0125] S1: An anti-adhesion layer 501 is coated on the edge of the ceramic substrate 101. The anti-adhesion layer 501 is an ultraviolet anti-adhesion layer with a thickness of 35μm. The anti-adhesion layer 501 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101. The anti-adhesion layer 501 is away from the epoxy resin layer 201 in the horizontal direction.
[0126] S2: An adhesive ultraviolet film 301 is covered on the epoxy resin layer 201 and the anti-adhesion layer 501, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0127] S3: Use a robotic arm to control the path of the UV light de-adhesive lamp to process the anti-tack layer 501 to reduce its stickiness;
[0128] S4: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0129] Example 12
[0130] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0131] S1: An elastomer 701 is attached to the edge of the ceramic substrate 101. The elastomer 701 has a width of 1.5 mm and a height of 0.3 mm. The elastomer 701 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101. The elastomer 701 is horizontally away from the epoxy resin layer 201.
[0132] S2: An adhesive ultraviolet film 301 is applied to the epoxy resin layer 201 and the elastomer 701, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0133] S3: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0134] Example 13
[0135] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0136] S1: An elastomer 701 is attached to the edge of the ceramic substrate 101. The width of the elastomer 701 is 3.2 mm and the height is 0.5 mm. The elastomer 701 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101. The elastomer 701 is horizontally away from the epoxy resin layer 201.
[0137] S2: An adhesive ultraviolet film 301 is applied to the epoxy resin layer 201 and the elastomer 701, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0138] S3: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0139] Example 14
[0140] The semiconductor device includes a ceramic substrate 101 and an electronic chip. The electronic chip is disposed on the ceramic substrate 101 and encapsulated with an epoxy resin layer 201. In the vertical direction, the projected area of the epoxy resin layer 201 is smaller than the projected area of the ceramic substrate 101, and the edge of the epoxy resin layer 201 is at a distance from the edge of the ceramic substrate 101. The cutting method includes the following steps:
[0141] S1: An elastomer 701 is attached to the edge of the ceramic substrate 101. The width of the elastomer 701 is 4.5 mm and the height is 0.7 mm. The elastomer 701 and the epoxy resin layer 201 are located on the same side of the ceramic substrate 101. The elastomer 701 is horizontally away from the epoxy resin layer 201.
[0142] S2: An adhesive ultraviolet film 301 is applied to the epoxy resin layer 201 and the elastomer 701, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film 301 is greater than or equal to the projected area of the ceramic substrate 101.
[0143] S3: Fix the adhesive ultraviolet film 301 onto the base 401 and cut the ceramic substrate 101.
[0144] Through the various embodiments of the semiconductor device cutting method of this application described above, the semiconductor device cutting method of this application can be derived. The semiconductor device includes a ceramic substrate and an electronic chip. The electronic chip is disposed on the ceramic substrate and encapsulated with an epoxy resin layer. In the vertical direction, the projected area of the epoxy resin layer is smaller than the projected area of the ceramic substrate, and the edge of the epoxy resin layer is at a distance from the edge of the ceramic substrate. The cutting method includes the following steps: coating an anti-adhesion layer on the edge of the ceramic substrate, the anti-adhesion layer and the epoxy resin layer being located on the same side of the ceramic substrate, and the anti-adhesion layer being horizontally away from the epoxy resin layer; maintaining a horizontal distance between the anti-adhesion layer and the epoxy resin layer to prevent the epoxy resin layer from being affected by the anti-adhesion layer; covering the epoxy resin layer and the anti-adhesion layer with an adhesive ultraviolet film, wherein in the vertical direction, the projected area of the adhesive ultraviolet film is greater than or equal to the projected area of the ceramic substrate; the adhesive ultraviolet film is used to fix the ceramic substrate to the base for subsequent cutting processes. The adhesive layer is treated to reduce its stickiness. Reducing the stickiness of the adhesive layer decreases the adhesion between the ceramic substrate edge and the adhesive UV film, thereby minimizing the deformation and stress caused by stretching at the ceramic edge where it contacts the UV film during vacuuming. This prevents cracks or even breakage at the ceramic substrate edge. Fixing the adhesive UV film to the base and cutting the ceramic substrate improves production efficiency and reduces production costs.
[0145] Another embodiment of the cutting method of this application replaces the anti-adhesion adhesive layer in the above-mentioned cutting method with an elastomer. Without the need for a viscosity reduction process, it is also possible to reduce the large deformation and stress caused by the stretching of the ceramic edge and the UV film due to vacuuming, thereby preventing cracks or even breakage at the edge of the ceramic substrate.
[0146] In summary, the semiconductor device cutting method proposed in this application, by setting an anti-adhesion layer or elastomer at the edge of the ceramic substrate, reduces the pulling force of the adhesive ultraviolet film on the ceramic substrate during vacuuming, thus avoiding large stress and deformation at the edge of the ceramic substrate caused by different material heights. This is beneficial for improving production efficiency and reducing costs.
[0147] The foregoing has described and / or illustrated exemplary embodiments of the semiconductor device dicing and fabrication methods proposed in this application. However, the embodiments of this application are not limited to the specific embodiments described herein; rather, components and / or steps of each embodiment may be used independently and separately from other components and / or steps described herein. Each component and / or step of one embodiment may also be used in combination with other components and / or steps of other embodiments. In describing the elements / components / etc. described and / or illustrated herein, the terms “a,” “first,” “second,” and “the above” are used to indicate the presence of one or more elements / components / etc. The terms “comprising,” “including,” and “having” are used to indicate an open-ended inclusion and mean that additional elements / components / etc. may exist in addition to those listed.
[0148] The embodiments of this application are not limited to the specific embodiments described herein. Rather, components of each embodiment can be used independently and separately from other components described herein. Each component of one embodiment can also be used in combination with other components of other embodiments. In the description of this specification, the terms "one embodiment," "some embodiments," "other embodiments," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the embodiments. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any suitable manner in one or more embodiments or examples.
[0149] The above are merely optional embodiments of the application examples and are not intended to limit the application examples. For those skilled in the art, the application examples can have various modifications and variations. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the application examples should be included within the protection scope of the application examples.
Claims
1. A method of dicing a semiconductor device including a ceramic substrate and an electronic chip provided on the ceramic substrate, the electronic chip being encapsulated with an epoxy layer, wherein, in a vertical direction, a projected area of the epoxy layer is smaller than a projected area of the ceramic substrate, and an edge of the epoxy layer has a distance from an edge of the ceramic substrate, characterized by: Includes the following steps: S1: A non-adhesive layer is coated on the edge of the ceramic substrate. The non-adhesive layer and the epoxy resin layer are located on the same side of the ceramic substrate, and the non-adhesive layer is horizontally away from the epoxy resin layer. S2: An adhesive ultraviolet film is applied to the epoxy resin layer and the anti-adhesion adhesive layer, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film is greater than or equal to the projected area of the ceramic substrate. S3: Treat the adhesive layer to reduce tack; S4: Fix the adhesive ultraviolet film onto the base and cut the ceramic substrate; The anti-tack layer is a heat-resistant anti-tack layer or an ultraviolet anti-tack layer, which reduces the tackiness of the anti-tack layer by heating or irradiation with an ultraviolet light de-adhesive lamp.
2. The method of dicing a semiconductor device according to claim 1, wherein: The thickness of the heat-resistant adhesive layer is 5~1000μm.
3. The semiconductor device cutting method according to claim 1, characterized in that: The thickness of the UV-resistant adhesive layer is 5~1000μm.
4. The method for cutting a semiconductor device according to claim 1, characterized in that: The heat-resistant adhesive layer is composed of a curing agent, a solvent, a self-expanding microsphere foaming agent, and colorant.
5. The semiconductor device cutting method according to claim 4, characterized in that: The curing agent is isophorone diisocyanate blocked isocyanate curing agent; the solvent is a mixture of liquid ammonia, liquid sulfur dioxide and thionyl chloride; the particle size of the self-expanding microspheres in the self-expanding microsphere foaming agent is 18 μm; the color powder is one organic color powder or a mixture of multiple organic color powders or one inorganic color powder or a mixture of multiple inorganic color powders.
6. The method for cutting a semiconductor device according to claim 1, characterized in that: In step S3, for ceramic substrates of different sizes and shapes to be cut, a robotic arm is used to control the path of the heating source or the ultraviolet light de-adhesive lamp to reduce the stickiness of the de-adhesive layer.
7. A method for cutting a semiconductor device, the semiconductor device comprising a ceramic substrate and an electronic chip, the electronic chip being disposed on the ceramic substrate, the electronic chip being encapsulated with an epoxy resin layer, wherein in the vertical direction, the projected area of the epoxy resin layer is smaller than the projected area of the ceramic substrate, and the edge of the epoxy resin layer is at a distance from the edge of the ceramic substrate, characterized in that: Includes the following steps: S1: An elastomer is attached to the edge of the ceramic substrate, the elastomer and the epoxy resin layer are located on the same side of the ceramic substrate, and the elastomer is horizontally away from the epoxy resin layer; S2: An adhesive ultraviolet film is applied to the epoxy resin layer and the elastomer, wherein, in the vertical direction, the projected area of the adhesive ultraviolet film is greater than or equal to the projected area of the ceramic substrate. S3: Fix the adhesive ultraviolet film onto the base and cut the ceramic substrate.
8. The method for cutting a semiconductor device according to claim 7, characterized in that: The width of the elastomer is 1~5mm.
9. The method for cutting a semiconductor device according to claim 7, characterized in that: The height of the elastomer is 0.1~1mm.