A triboelectric acoustic wave sensor

Abstract

The present invention relates to the field of sound transmission technology, and more specifically, to a triboelectric acoustic wave sensor, comprising a housing made of metal with a plurality of holes in its cross-section. A first metal ring, a first insulating ring, a first metal plate, and a circuit board are stacked within the housing, the circuit board being located at an opening of the housing. A triboelectric polymer film is disposed on the side of the first metal ring proximal to the first insulating ring, and a copper layer is plated on the side of the triboelectric polymer film distal to the first insulating ring. The triboelectric polymer film is connected to an electrode, and sound transmission holes are provided on the first metal plate. The first metal plate and the electrode are respectively connected to the circuit board. This triboelectric acoustic wave sensor comprises a copper-plated triboelectric polymer film attached to the first metal ring and a first insulating ring disposed between the triboelectric polymer film and the first metal plate. The triboelectric polymer film and the first metal plate form the plates of a capacitor, and an electrical signal is obtained when the triboelectric polymer film is displaced by sound waves.

Description

Technical Field

[0001] The present invention relates to the field of sound transmission technology, and in particular to a triboelectric acoustic wave sensor. Background Art

[0002] With the rapid development of science and technology, human society is inevitably moving towards digital smart cities. However, the foundation for building an intelligent and digital economy lies in the development of an Internet of Things (IoT) industry cluster. Therefore, the use of a large number of sensors is inevitable. As the most efficient and direct communication channel, sound is an indispensable component in mobile devices, music recording, human-computer interaction, and other fields, and plays an indispensable role in the development of smart cities.

[0003] Since the first acoustic sensor appeared in the 19th century (Thomas Edison's carbon fiber microphone), various acoustic sensors have been manufactured, and their performance has gradually improved. Among them, the electret microphone is a typical acoustic sensor, widely used in various acoustic detection applications. The polymer film in the electret microphone is polarized under a strong electric field in a heated environment, causing the charge carriers to reorient and align the dipoles in the material. When the material cools and the high voltage is removed, the dipoles are "frozen," resulting in a persistent surface charge on the surface of the polymer film. This not only increases the microphone manufacturing process, but also means that the diaphragm material of the electret microphone must be able to withstand strong electric fields to generate polarization charges. Therefore, the requirements for the diaphragm material are higher, and the production cost also increases accordingly.

[0004] In recent years, triboelectric nanogenerator (TENG) technology has rapidly developed. TENGs, with their simple structure, low cost, and versatile materials, have found widespread application in mechanical sensing and energy harvesting. TENG-based acoustic wave sensors have also emerged in rapid succession, but their frequency response range and sensitivity remain significantly limited. Previous work has shown that the best acoustic wave response frequency range is between 100 and 5000 Hz, and the sound pressure level (SPL) required for sound collection is relatively high, exceeding 80 dB. However, the SPL of everyday sound waves is below 80 dB. Previous TENG acoustic wave sensors directly utilize a capacitive structure consisting of a triboelectric polymer film and a metal plate. However, the pressure exerted by sound waves on an object is very small, and the pressure increases exponentially with the sound pressure level. Therefore, at low sound pressure levels, the displacement of the triboelectric polymer film driven by the sound wave is minimal, resulting in a very weak output signal from a TENG acoustic wave sensor. The output signals of previous TENG acoustic wave sensors can only be detected by detection instruments at very high sound pressure levels (generally greater than 80 dB). In addition, the use of thick triboelectric polymer films in previous TENG acoustic wave sensors further limits their sensitivity and frequency response range. Summary of the Invention

[0005] The present invention addresses the problems of complex manufacturing process and high cost of current electret microphones; and the problems that previous TENG acoustic wave sensors cannot respond to lower and higher frequency sounds, and only respond well at higher sound pressure levels. A triboelectric acoustic wave sensor is provided.

[0006] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0007] A triboelectric acoustic wave sensor, characterized in that it includes: a shell, the shell is made of metal and has several holes on its cross section, a first metal ring, a first insulating ring, a first metal plate, and a circuit board are stacked inside the shell, the circuit board is located at the opening of the shell, a triboelectric polymer film is provided on the side of the first metal ring close to the first insulating ring, the side of the triboelectric polymer film away from the first insulating ring is plated with a copper layer, the triboelectric polymer film is connected to the electrode, a sound transmission hole is opened on the first metal plate, and the first metal plate and the electrode are respectively connected to the circuit board.

[0008] Preferably, a metal shielding net is further included, and the metal shielding net is located on a side of the first metal ring close to the first insulating ring. The metal shielding net can prevent impurities from damaging the triboelectric polymer film and can also shield interference.

[0009] Preferably, a second metal ring is provided on a side of the first metal plate away from the first insulating ring.

[0010] Preferably, a second metal plate and a third metal ring are provided on the side of the second metal ring away from the first metal plate, with the second metal plate having holes. The second metal ring, the second metal plate, and the third metal ring form two cavities behind the first metal plate, which facilitates the vibration and directional sound pickup of the triboelectric polymer film.

[0011] Preferably, the device further includes a second insulating ring, the outer diameter of which matches the inner diameter of the outer shell. The outer diameter of the first insulating ring is the same as that of the second insulating ring. The third metal ring, second metal plate, second metal ring, and first metal plate are all located within the second insulating ring. The outer shell is made of metal and acts as a Faraday cage to achieve electromagnetic shielding. Its cross-section has several holes for sound waves to pass through. The first metal plate, second metal ring, second metal plate, and third metal ring are enclosed within the second insulating ring to prevent short circuits between these components and the outer shell.

[0012] Preferably, the triboelectric polymer film is made of FEP, PI, PET or PTFE. Other friction materials can also be used as triboelectric polymer films, and their surface charges all come from the triboelectric effect.

[0013] Both triboelectric polymer films and electret films generate electric charges on their corresponding surfaces. The biggest difference is that the surface charge of the electret material is obtained under an external high-voltage electric field, while the surface charge of the triboelectric polymer film comes from the friction between it and positively charged materials such as metals. Therefore, the production time of triboelectric polymer films is shorter and the process is simpler.

[0014] Preferably, the thickness of the triboelectric polymer film is 9 μm-75 μm, preferably 9 μm, 12.5 μm, 30 μm, 50 μm or 75 μm.

[0015] Preferably, the thickness of the triboelectric polymer film 11 is 9 μm. The thinner the triboelectric polymer film is, the better the output performance is.

[0016] Preferably, a transistor is provided on the circuit board, the base of the transistor is connected to the first metal plate, and the emitter of the transistor is connected to the triboelectric polymer film via an electrode. The electrical signal generated by the sound wave is amplified by the transistor.

[0017] Preferably, the first insulating ring and the second insulating ring are both plastic rings.

[0018] Compared to the prior art, the present invention offers significant advantages: a copper-plated triboelectric polymer film is attached to a first metal ring using conductive adhesive, and a first insulating ring is placed between the triboelectric polymer film and the first metal plate, forming the two electrodes of a capacitor. Furthermore, the triboelectric acoustic wave sensor operates on a combination of frictional charging and electrostatic induction. Because polymer materials have a strong electronegativity, when rubbed against other positively charged materials, such as metals, electrons transfer from the surface of the less negative material to the surface of the more negative material. When the two materials separate, the less negative material becomes positively charged, while the more negative material becomes negatively charged. Consequently, the surface of the triboelectric polymer film becomes negatively charged, forming a unique triboelectric capacitor with the first metal plate. When the triboelectric polymer film undergoes relative displacement under the action of acoustic waves, the magnitude of the triboelectric capacitor changes accordingly, generating an initial electrical signal. This initial signal is then fed into the base of a transistor, where it is amplified. This allows the external circuit to directly detect the amplified signal, greatly improving the ease of signal detection. By being able to record acoustic signals even at low sound pressure levels, the output of the friction nanogenerator acoustic wave sensor has an extremely high signal-to-noise ratio and ultra-wide frequency response, which can meet a wide range of commercial needs. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 An exploded view of the triboelectric acoustic wave sensor provided by the present invention;

[0020] Figure 2 for Figure 1 sectional view of

[0021] Figure 3 A schematic diagram of the structure and mechanism of the triboelectric acoustic wave sensor provided by the present invention;

[0022] Figure 4 This is the output diagram of the FEP film used in the present invention under different frequency sound waves;

[0023] Figure 5 Output diagrams of PI, PET, and PTFE membranes used in the present invention under different sound waves;

[0024] Figure 6 The present invention uses the FEP film at different frequencies of the sound wave waveform Figure 1 ;

[0025] Figure 7 The present invention uses the FEP film at different frequencies of the sound wave waveform Figure 2 ;

[0026] Figure 8 This is a sound pressure diagram of the measurement conditions using PI films of different thicknesses in the present invention;

[0027] Figure 9 This is the output diagram of the PI film with different thicknesses under measurement conditions used in the present invention;

[0028] Figure 10 A comparison chart of the triboelectric acoustic wave sensor of the present invention in actual application and music recording with a commercial electret microphone, as well as a diagram of its application in a remote video call;

[0029] Figure 11 A diagram showing the application of the triboelectric acoustic wave sensor of the present invention in human-computer interaction and voice input;

[0030] Figure 12 A comparison chart of the same music recorded by the triboelectric acoustic wave sensor of this application and a commercial electret microphone;

[0031] Figure 13 Application diagram for robot voice control and voice input using triboacoustic sensors.

[0032] Markings in the figure: 1-housing, 2-metal shielding mesh, 3-first metal ring, 4-first insulating ring, 5-first metal plate, 6-second metal ring, 7-second metal plate, 8-third metal ring, 9-second insulating ring, 10-circuit board, 11-triboelectric polymer film. DETAILED DESCRIPTION

[0033] The present invention will be described in detail below with reference to the accompanying drawings.

[0034] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0035] In the description of the present invention, it should be understood that the terms "longitudinal", "transverse", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention.

[0036] In the description of the present invention, unless otherwise specified and limited, it should be noted that the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a mechanical connection or an electrical connection, or it can be the internal communication between two components. It can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to the specific circumstances.

[0037] like Figure 1 and Figure 2 As shown, the present application provides a triboelectric acoustic wave sensor T-MIC, comprising: a shell 1, wherein a metal shielding mesh 2, a first metal ring 3, a first insulating ring 4, a first metal plate 5, a second metal ring 6, a second metal plate 7, a third metal ring 8, a second insulating ring 9, and a circuit board 10 are stacked inside the shell 1, wherein the circuit board 10 is located at the opening of the shell 1, and a triboelectric polymer film 11 is provided on the side of the first metal ring 3 close to the first insulating ring 4, and a copper layer is plated on the side of the triboelectric polymer film 11 away from the first insulating ring 4, and the side plated with the copper layer is connected to the first metal ring 3 by a conductive adhesive, and the thickness of the copper layer is 400 Å. The triboelectric polymer film 11 is connected to the electrode, and the first metal plate 5 and the electrode are respectively connected to the circuit board 10.

[0038] The housing 1 of the present invention is made of metal and functions as a Faraday cage. In this embodiment, the housing 1 has an outer diameter of 14 mm, an inner diameter of 13 mm, and a height of 6 mm. Several holes are provided in its cross section to allow sound waves to pass through. A metal shielding mesh 2 is located on the side of the first metal ring 3 near the housing 1. This metal shielding mesh 2 is a mesh structure made of metal wire and serves as a shield against interference. In this embodiment, the metal shielding mesh 2 has a diameter of 13 mm and a thickness of 0.5 mm. Mounted in contact with the housing 1, the metal shielding mesh 2 not only shields against interference but also prevents the ingress of external impurities, protecting the triboelectric polymer film 11.

[0039] The first, second, and third metal rings 3, 6, and 8 are all hollow rings. The first metal ring 3 is positioned away from the metal shielding mesh 2 and has a triboelectric polymer film 11 affixed to it. In this embodiment, to prevent short circuits, the second and third metal rings 6, 8 require a second insulating ring 9 for insulation from the housing 1. The outer diameter of the first metal ring 3 is the same as that of the second insulating ring 9, both 13 mm. The inner diameter of the first metal ring 3 is 11 mm, and the thickness of the first metal ring 3 is 1 mm. The inner diameter of the second insulating ring 9 is 12 mm, and the height is 4 mm. Given an inner diameter of 11 mm for the first metal ring 3, the effective diameter of the triboelectric polymer film 11 is 11 mm. The outer and inner diameters of the first insulating ring 4 are the same as those of the first metal ring 3, namely 13 mm and 11 mm, respectively. To ensure that the surface charge on the triboelectric polymer film 11 generates an electrical signal when it displaces the first metal plate 5, the thickness of the first insulating ring 4 should be kept to a minimum, as long as a certain gap is maintained between the triboelectric polymer film 11 and the first metal plate 5. In this embodiment, the thickness of the first insulating ring 4 is 150 μm. The first metal plate 5 is provided with a number of sound transmission holes, which are evenly distributed along the circumference of the first metal plate 5. Two circles of sound transmission holes are provided, one near the center, another circle on the outside, and a sound transmission hole is also provided in the center of the first metal plate 5.

[0040] After a gap is formed between the first metal plate 5 and the triboelectric polymer film 11 through the first insulating ring 4, it is equivalent to forming a triboelectric capacitor. The first metal plate 5 and the triboelectric polymer film 11 are equivalent to the two plates of the capacitor. When the sound wave drives the triboelectric polymer film 11 to vibrate, the charges on the triboelectric polymer film 11 and the first metal plate 5 will be transferred, thereby generating an electrical signal.

[0041] A second metal ring 6 is located behind the first metal plate 5. The outer diameter of the second metal ring 6 is the same as the inner diameter of the second insulating ring 9 (12 mm in this embodiment). The inner diameter of the second metal ring 6 is 11 mm, and the thickness is 1.2 mm. Behind the second metal ring 6 is a second metal plate 7, which has a diameter of 12 mm and a thickness of 0.48 mm. A hole is located in the center of the second metal plate 7.

[0042] A third metal ring 8 is also provided behind the second metal plate 7. The outer diameter and inner diameter of the third metal ring 8 are the same as those of the second metal ring 6. The thickness of the third metal ring 8 is 1.5 mm. The second metal ring 6, the second metal plate 7 and the third metal ring 8 form two cavities on the path of electrical signal transmission, which is conducive to the directional vibration of the triboelectric polymer film 11.

[0043] Finally, a circuit board 10 is provided. The diameter of the circuit board 10 is the same as the inner diameter of the housing 1 , that is, in this embodiment, the diameter of the circuit board 10 is 13 mm and the thickness is 1 mm.

[0044] Figure 3 The structure and mechanism diagram of the triboelectric acoustic wave sensor T-MIC of this application is as follows: Figure 3 As shown in A, it is the structural diagram and simulation scenario. Figure 3 As shown in Figure B, it shows the schematic diagram of the charge distribution and displacement changes of the triboelectric polymer film under the action of sound waves. Figure 3 B(i) is the maximum displacement distribution, Figure 3 B(ii) is the equilibrium distribution, Figure 3 B(iii) Reverse maximum displacement distribution.

[0045] Figure 3 C(i) shows the maximum displacement distribution curve of a simulated FEP triboelectric polymer film under a 1000 Hz sound wave and a pressure of 0.02 Pa. The results show that the displacement of the film in the simulated case is at the nanometer level, so the signal output at low sound pressure levels is very small.

[0046] Figure 3 C(ii) shows the simulation results of displacement change. From the simulation results, it can be seen that the average displacement change frequency is 1000 Hz, which is consistent with the sound wave frequency of the simulation conditions. The simulated relationship between average displacement and sound pressure level (SPL) is shown in the figure below. Figure 3 As shown in Figure C(ii), it can be concluded that the displacement increases exponentially with SPL. Under extreme SPL or other disturbances, the triboelectric polymer film can contact the first metal plate. Figure 3 D(i) is the equivalent circuit diagram of the triboelectric acoustic wave sensor. Its principle is that the triboelectric polymer film deforms under the action of acoustic waves, causing the corresponding capacitance of the triboelectric acoustic wave sensor to change, thereby generating a raw electrical signal in the external circuit, which is amplified by the transistor. Figure 3 D(ii) and Figure 3 D (iii) depicts the waveforms of 20 Hz and 20000 Hz sound waves detected by the triboelectric acoustic wave sensor (FEP film, 30 μm), respectively, demonstrating that the triboelectric acoustic wave sensor has a wide frequency response range.

[0047] Figure 4 The output of triboelectric polymer film using 30 μm thick FEP film under the action of different frequency sound waves was studied. Figure 4 A is a photo of the front and back of the copper-plated FEP film after adhesion to the first metal ring, an electron microscope photo, and a schematic diagram of the film size. Figure 4 A(i) is the bottom schematic diagram, Figure 4A(ii) is a front view of the first metal ring. Figure 4 A (iii) is an electron microscope photograph of the surface of the FEP film before and after copper plating, showing that the surface of the film is very flat and smooth, which is conducive to the vibration of the polymer film under sound waves. Figure 4 A( ) is a schematic diagram of the size structure of the triboelectric polymer film, where D represents the effective diameter of the triboelectric polymer film (11 mm), d1 represents the thickness of the film itself, which is 30 μm in this embodiment, and d2 is the thickness of the copper plated on the triboelectric polymer film, which is 400 Å in this embodiment. Figure 4 B is a schematic diagram of the measurement process, in which an audio signal is sent from a mobile phone, the triboelectric sensor converts the sound wave signal into an initial electrical signal, and then the sound wave signal is displayed on a computer through an audio circuit and an oscilloscope. Figure 4 C is the simulated curve of output voltage and time under simulation conditions. From the simulation results, the output frequency is the same as the frequency of the input sound wave, both are 1000 Hz. At the same time, the simulated relationship curve between output voltage and SPL can be obtained, such as Figure 4 As shown in Figure D, it is shown that the output voltage increases exponentially with SPL.

[0048] Figure 4 E is the sound pressure level of sound waves of different frequencies at the test location, ranging from 43.5 dB to 113 dB. Figure 4 F is the output voltage at different sound pressure levels and different frequency sound waves. The output voltage range is 69 to 3400 mV. Figure 4 E shows the waveform of the 10000 Hz sound wave, indicating that this triboelectric acoustic wave sensor can accurately measure the waveform of the sound wave. Figure 4 G shows the deviation of the sound wave waveform measured at 1 Hz intervals between 50-60 Hz and the standard value. The results show that the deviation value from the standard sound wave waveform is less than 1.6‰, demonstrating that T-MIC has extremely high accuracy in sound wave measurement. Figure 4 H is the different output voltages of the triboelectric acoustic wave sensor at different SPLs for a 1000 Hz sound wave. It can be seen that when the SPL increases, the output voltage increases exponentially, which is consistent with the simulated change shape. Figure 4 Figure 1 shows a comparison of the output voltages of triboelectric polymer films made of different materials (FEP film, PI film, PET film, and PTFE film) under low-frequency sound waves (50, 60, 70, and 80 Hz) and the same sound pressure level. The results show that the output voltage of the FEP film is the largest, so the triboelectric acoustic wave sensor using the FEP film has higher sensitivity.

[0049] Figure 5 The acoustic waveforms of FEP triboelectric polymer films at different frequencies are shown. Figure 5 (a, b) and Figure 3 D(ii) shows the waveforms of audio waves at frequencies of 30, 40, and 20 Hz produced by a high-power speaker. Unless otherwise specified, the 20, 30, and 40 Hz waves are produced by a high-power speaker. Figure 5 (co) and Figure 6 The waveforms of other frequency sound waves are shown. Therefore, the triboelectric acoustic wave sensor of the present application can detect sound waves with ultra-high precision and an ultra-wide frequency response range (20-20000 Hz).

[0050] Figure 7 Shows the output performance of the PTFE membrane. Figure 7 a shows the output of the SPL and PTFE membrane at the test position when the signal output of the PTFE membrane is tested, and the output voltage range is 50 to 3080 mV. Figure 8 The output performance of the PET film is shown. Figure 8 a shows the SPL at the test location. The output voltage of the PET triboelectric polymer film (98-3400 mV) is as follows Figure 8 As shown in b. Figure 9 Shows the output performance of the PI film. Figure 9 a Plot of the sound pressure level (50–20,000 Hz) of the PI membrane at the test position. Figure 9 b shows the output voltage of the PI triboelectric polymer film under different frequency sound waves (50-20000 Hz), with the output voltage ranging from 66.5 to 3210 mV. Therefore, the PI film can also well achieve the goals of wider frequency and high sensitivity.

[0051] Figure 10 and Figure 11 The study shows the effect of triboelectric polymer films of different thicknesses on output performance. PI films of different thicknesses were used in the study, with the thicknesses of the triboelectric polymer films being 9 μm, 12.5 μm, 30 μm, 50 μm, and 75 μm, respectively. Figure 10 (ae) show the SPL of films with different thicknesses (50-20,000 Hz) at the test position. Figure 11 (ae) show the output voltages of PI triboelectric polymer films with different thicknesses, respectively. Figure 11 Figure f plots a comparison of the output voltage at frequencies ranging from 50 to 80 Hz for PI films of varying thicknesses at the same SPL. This comparison of the output results indicates that the output voltage increases as the PI film thickness decreases. This indicates that thinner triboelectric polymer films exhibit better output performance.

[0052] like Figure 12The following figure compares the recordings of the same music using the triboelectric acoustic wave sensor of this application and a commercial electret microphone (sensitivity -30 ± 3 dB). The triboelectric acoustic wave sensor is mounted in a metal shielded housing to reduce environmental electromagnetic interference, and the signal is recorded on a computer via an audio circuit board identical to that used in this commercial electret microphone. Figure 12 A shows a schematic diagram of the music recording process. Figure 12 B shows a photograph of music recorded using a triboelectric acoustic wave sensor, with a scale of 10 cm. Figure 12 C plots the real-time SPL curve of the triboelectric acoustic wave sensor position when recording music. The SPL is mainly distributed between 50-70 dB. Figure 12 D shows the thickness of the FEP film of 30 μm. Figure 12 E shows a commercial electret microphone, Figure 12 F shows the output spectrogram of the same piece of music recorded by a PI film with a thickness of 30 μm. From the comparison of these three figures, it can be found that the output of the triboelectric acoustic wave sensor is better than that of the commercial electret microphone, such as Figure 12 D and Figure 12 F upper and Figure 12 E. In particular, the output signal of the FEP film is more than twice that of the commercial electret microphone, indicating that the triboelectric microphone has the advantage of higher sensitivity compared to the traditional acoustic wave sensor using electret material. Figure 12 D to Figure 12 In F, the corresponding two frequency bands 10000 Hz and 20000 Hz are marked with dotted lines. In the dotted frame area, the triboelectric acoustic wave sensor of the present invention can have a better recording capability of high-frequency sound waves (10000-20000 Hz). Figure 12 G and Figure 12 In H, a 30 μm thick FEP film was used to record the same song at a lower SPL. The SPL range was mainly between 40 and 60 dB, and the spectrum shows that the triboelectric acoustic wave sensor also performs well at low SPL. The triboelectric acoustic wave sensor of the present invention (using a 30 μm thick FEP film) is also used in wireless video communication systems, such as Figure 12 As shown in Figure 1, the picture shows two users conducting real-time wireless video communication on a computer using a triboelectric acoustic wave sensor.

[0053] Figure 13 The application of robot voice control and voice input based on triboelectric acoustic sensor (using FEP film with a thickness of 30 μm) was demonstrated. Figure 13 A shows a schematic diagram of the human-machine interactive robot voice control. Before implementation, electromagnetic interference and other environmental interference were shielded by a metal shell, and the robot's original commercial microphone was removed and replaced with a triboelectric acoustic sensor. Figure 13As shown in Figure B, the triboelectric acoustic sensor we made is used for voice control in practical applications. The triboelectric acoustic sensor is installed on the back of the robot. Figure 13 As shown at the top of Figure 8, electromagnetic interference and other environmental interference are shielded by the metal housing. Figure 13 C shows the sound signal recorded when a person issues the audio command "go forward", thus realizing the voice control between the robot and the triboelectric acoustic sensor, as well as the integrated real-time sensor conversion logic response function of the triboelectric acoustic sensor. In addition, the use of triboelectric acoustic sensors can also realize the conversion of voice content to text content on the computer, such as Figure 13 As shown in D. Figure 13 E, Figure 13 Figure F shows the operator's original voice signal and spectrogram, which reads "Hello, it's a nice day." The experimental results demonstrate that the triboacoustic sensor consistently and accurately records the human voice, demonstrating its ability to meet the integrated real-time perception-to-logic response requirements. In summary, the triboacoustic sensor offers excellent performance and low overall cost, highlighting its potential for application in the acoustic wave sensor industry.

[0054] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A triboelectric acoustic wave sensor, characterized in that: include: A shell (1), wherein the shell (1) is made of metal and has a plurality of holes on its cross section, wherein a first metal ring (3), a first insulating ring (4), a first metal plate (5), and a circuit board (10) are stacked in the shell (1), wherein the circuit board (10) is located at the opening of the shell (1), wherein a triboelectric polymer film (11) is provided on a side of the first metal ring (3) close to the first insulating ring (4), and a copper layer is plated on a side of the triboelectric polymer film (11) away from the first insulating ring (4), wherein the triboelectric polymer film (11) is connected to an electrode, wherein a sound transmission hole is provided on the first metal plate (5), and wherein the first metal plate (5) and the electrode are respectively connected to the circuit board (10).

2. The triboelectric acoustic wave sensor according to claim 1, characterized in that: It also includes a metal shielding mesh (2), which is located on a side of the first metal ring (3) close to the housing (1).

3. The triboelectric acoustic wave sensor according to claim 1, characterized in that A second metal ring (6) is provided on a side of the first metal plate (5) away from the first insulating ring (4).

4. The triboelectric acoustic wave sensor according to claim 3, characterized in that: A second metal plate (7) and a third metal ring (8) are provided on a side of the second metal ring (6) away from the first metal plate (5), and a hole is provided on the second metal plate (7).

5. The triboelectric acoustic wave sensor according to claim 4, characterized in that: It also includes a second insulating ring (9), the outer diameter of the second insulating ring (9) matches the inner diameter of the housing (1), the outer diameter of the first insulating ring (4) is the same as the outer diameter of the second insulating ring (9), and the third metal ring (8), the second metal plate (7), the second metal ring (6) and the first metal plate (5) are all located inside the second insulating ring (9).

6. The triboelectric acoustic wave sensor according to claim 1, characterized in that: The triboelectric polymer film (11) is made of FEP, PI, PET or PTFE material.

7. The triboelectric acoustic wave sensor according to claim 6, characterized in that: The thickness of the triboelectric polymer film (11) is 9 μm-75 μm.

8. The triboelectric acoustic wave sensor according to claim 7, characterized in that: The thickness of the triboelectric polymer film (11) is 9 μm.

9. The triboelectric acoustic wave sensor according to claim 1, characterized in that: A triode is provided on the circuit board (10), the base of the triode is connected to the first metal plate (5), and the emitter of the triode is connected to the triboelectric polymer film (11) via an electrode.

10. The triboelectric acoustic wave sensor according to claim 5, characterized in that: The first insulating ring (4) and the second insulating ring (9) are both plastic rings.

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