LED chip and manufacturing method thereof

Abstract

The application provides an LED chip and a manufacturing method thereof, realizes parallel connection of multiple vertical structure light emitting units, can distribute the total current of the LED chip, and reduces the overall voltage of the LED chip; meanwhile, the LED chip is etched to form multiple light emitting arrays, effectively increases the light emitting area of the side surface, especially for the ultraviolet LED chip with short wavelength, more TM mode light is emitted, and obvious light emitting effect is obtained. In addition, the first electrode communication layer is arranged on the bottom surface of each division channel and communicates with each other, and has an electrode leading-out area on the side surface close to the first type semiconductor layer, so that the first electrode does not additionally occupy the light emitting area, meanwhile, the current expansion uniformity is greatly improved through the first electrode communication layer, the uniformity of LED light emission is ensured, the working voltage of the LED chip is further reduced, and the electric-optical conversion efficiency is improved.

Description

Technical Field

[0001] This invention relates to the field of light-emitting diodes, and more particularly to an LED chip and its manufacturing method. Background Technology

[0002] LEDs, as a novel solid-state light source, offer advantages such as energy saving, environmental friendliness, long lifespan, safe low-voltage operation, and diverse design options. Traditional LEDs are horizontally structured LEDs fabricated on sapphire substrates. Since sapphire substrates are non-conductive, current propagates laterally within the epitaxial layer, with the p-electrode and n-electrode on the same side. This necessitates etching p-GaN to fabricate the p-electrode, which not only reduces the light-emitting area but also increases the light-shielding area due to the presence of the metal electrode, significantly reducing the LED's light extraction efficiency. Furthermore, as the emission wavelength of LEDs shortens, especially for deep ultraviolet (MUV) LEDs, the TE mode of the emitted light gradually decreases, while the TM mode proportion increases. The TM mode mainly propagates parallel to the epitaxial layer, exhibiting side-emitting characteristics. Consequently, the external quantum efficiency of the LED decreases accordingly. Conventional flip-chip LED structures are not effective for the TM light extraction of deep UV LEDs.

[0003] Therefore, to solve the above problems, a substrate transfer technique is employed. The LED epitaxial layer on the growth substrate is transferred to a metal, highly doped conductive silicon, or flexible substrate with better photoelectric properties through bonding and electroplating. Then, laser lift-off is used to remove the sapphire growth substrate, allowing the LED chip to emit light from the n-GaN surface. This eliminates the need for etching the p-GaN, thus reducing the light-emitting area, and also positions the n and p electrodes on the upper and lower surfaces respectively, enabling current transmission in the vertical direction, resulting in a vertically structured LED chip. The vertically structured LED chip, due to the reduced light-shielding area of ​​the electrodes, improves the luminous efficiency of the LED chip, making it a very suitable chip structure for fabricating high-power LEDs.

[0004] However, in manufacturing large-size vertical LED chips, the applicant discovered that due to current limitations in the quality of epitaxial materials, defects such as through-dislocations can cause chip failure. Often, a tiny defect can cause the entire LED chip to fail. Therefore, the larger the LED chip area, the lower the overall yield and the higher the price. Simultaneously, due to the significant refractive index difference between the LED epitaxial semiconductor material and air, the solid angle at which photons emitted from multiple quantum wells (MQWs) can escape from the LED surface is very small. A large proportion of photons propagate and gradually recombine in the waveguide formed by the semiconductor material, and eventually, some photons are emitted from the LED edge. For large-chip LEDs, the specific perimeter (perimeter / area) is small, resulting in poor sidewall light emission.

[0005] In view of this, the inventor has specifically designed an LED chip and its manufacturing method, which leads to this invention. Summary of the Invention

[0006] The purpose of this invention is to provide an LED chip and its manufacturing method to solve the problems of poor stability and sidewall light emission effect of vertical structure LED chips under high current injection.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0008] An LED chip, comprising:

[0009] Conductive substrate;

[0010] A light-emitting structure is formed on the back side of the conductive substrate by bonding through a bonding layer. The light-emitting structure includes a plurality of light-emitting arrays that are independent of each other by a dividing channel. Each light-emitting array includes a first type semiconductor layer, an active layer and a second type semiconductor layer stacked sequentially along a first direction. The first direction is perpendicular to the conductive substrate and is directed from the light-emitting structure to the conductive substrate. The dividing channel exposes the first type semiconductor layer.

[0011] The second electrode layer is stacked on the side surface of the second type semiconductor layer corresponding to each light-emitting array that is away from the active layer;

[0012] A first electrode connecting layer is disposed on the bottom surface of each of the segmented channels and is interconnected with each other; the first electrode connecting layer has an electrode lead-out area on the side surface near the first type of semiconductor layer.

[0013] A first insulating layer covers each of the light-emitting arrays, the dividing channels, and the first electrode connecting layer, and has a through-hole exposing the second electrode layer;

[0014] A metal reflector is disposed on the surface of the light-emitting structure by embedding it into the through hole, and serves as a bonding surface;

[0015] The first electrode is disposed in the electrode lead-out area and forms contact with the first type semiconductor layer through the first electrode connecting layer.

[0016] Preferably, a second insulating layer is provided on the side wall of the dividing channel, the first electrode connecting layer is insulated from the side walls of the two light-emitting arrays through the second insulating layer, and the first insulating layer covers the second insulating layer.

[0017] Preferably, the metal reflector extends to the surface of the first insulating layer, completely covering each of the light-emitting arrays and the dividing channels.

[0018] Preferably, each of the light-emitting arrays is uniformly arranged through the dividing channel.

[0019] Preferably, the conductive substrate comprises a substrate composed of one or more of Au, Ni, Al, Cu, W, Si, Se, and GaAs.

[0020] Preferably, the second electrode layer and the metal reflector are metal reflective materials, including one or more of indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, and nickel.

[0021] Preferably, the first type of semiconductor layer has a roughened surface.

[0022] Preferably, the LED chip includes an ultraviolet LED chip.

[0023] Preferably, the first electrode connecting layer is located away from the sidewalls of the two light-emitting arrays.

[0024] The present invention also provides a method for manufacturing an LED chip, the method comprising the following steps:

[0025] S01, Provide a growth substrate;

[0026] S02. Growing a light-emitting structure, wherein the light-emitting structure includes at least a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked sequentially along the surface of the growth substrate;

[0027] S03. Etch the light-emitting structure onto a portion of the first type semiconductor layer to form a plurality of light-emitting arrays that are independent of each other through the dividing channels;

[0028] S04. Fabricate a second insulating layer that covers the light-emitting structure and exposes the surface of the light-emitting array and the bottom of the segmentation channel;

[0029] S05, forming a conductive second electrode layer and a first electrode interconnect layer;

[0030] The second electrode layer is stacked on the surface of each light-emitting array;

[0031] The first electrode connecting layer is disposed on the bottom surface of each of the segmented channels and is interconnected with each other;

[0032] S06. A first insulating layer is formed, which covers each of the light-emitting arrays, the dividing channels and the first electrode connecting layer, and has a through hole exposing the second electrode layer;

[0033] S07. A metal reflector is formed, which is disposed on the surface of the light-emitting structure by embedding the through hole;

[0034] S08. A conductive substrate is provided, and the metal reflector is used as a bonding surface, so that the light-emitting structure is bonded to the back side of the conductive substrate through a bonding layer;

[0035] S09. Remove the growth substrate;

[0036] S10. By etching a portion of the first type semiconductor layer to the first electrode interconnect layer, the first electrode interconnect layer is made to have an exposed surface that serves as an electrode lead-out area.

[0037] S11. Through a roughening process, the first type of semiconductor layer is given a roughened surface;

[0038] S12. Fabricate a first electrode, which is disposed in the electrode lead-out area and forms contact with the first type semiconductor layer through the first electrode connecting layer.

[0039] Preferably, the metal reflector extends to the surface of the first insulating layer, completely covering each of the light-emitting arrays and the dividing channels.

[0040] As can be seen from the above technical solution, the LED chip provided by the present invention includes: a plurality of light-emitting arrays that are independent of each other through partitioned channels; a second electrode layer is stacked on the surface of the second type semiconductor layer corresponding to each light-emitting array on the side away from the active layer; a first electrode connecting layer is provided on the bottom surface of each partitioned channel, and the surface of the first electrode connecting layer near the first type semiconductor layer has an electrode lead-out area; it also includes a first insulating layer covering each light-emitting array, partitioned channel, and first electrode connecting layer and exposing the second electrode layer; a metal reflector, which is disposed on the surface of the light-emitting structure by embedding the through-hole, and serves as a bonding surface to bond the conductive substrate and the light-emitting structure to form an integral unit. Thus, the parallel connection of multiple vertical structure light-emitting units is realized, which can divert the total current of the LED chip to reduce the overall voltage of the LED chip; at the same time, etching the LED chip to form multiple light-emitting arrays effectively increases the side light-emitting area, especially for short-wavelength ultraviolet LED chips, resulting in more TM mode light emission and a significant light emission effect. Furthermore, the first electrode connecting layer is disposed on the bottom surface of each of the segmented channels and interconnected with each other, and has an electrode lead-out area on the side surface near the first type of semiconductor layer. This ensures that the first electrode does not occupy additional light-emitting area. At the same time, the current spreading uniformity greatly improved by the first electrode connecting layer ensures the uniformity of LED light emission, further reduces the operating voltage of the LED chip, and improves the electro-optical conversion efficiency. Moreover, based on the above structure, the epitaxial stack is connected to the conductive substrate through a metal mirror. The heat generated can be directly led out through the metal to the conductive substrate and the bottom heat sink in the subsequent packaging structure to enhance the heat dissipation capacity of the LED and improve its reliability. At the same time, it not only solves a series of problems such as severe light absorption, poor conductivity, poor mechanical properties, and weak heat dissipation performance of the growth substrate, but also its current direction is approximately vertical, which can avoid current congestion and withstand larger driving currents.

[0041] Furthermore, the metal reflector extends to the surface of the first insulating layer, completely covering each of the light-emitting arrays and the dividing channels; it has a good reflective effect on the light emitted from the surface and sides of the vertical structure LED chip, which can further improve the external quantum efficiency of the LED chip.

[0042] Finally, a second insulating layer is provided on the side wall of the dividing channel. The first electrode connecting layer is insulated from the side walls of the light-emitting arrays on both sides through the second insulating layer, and the first insulating layer covers the second insulating layer; this can better ensure the isolation between the first electrode connecting layer and the side wall of the light-emitting array.

[0043] The present invention also provides a method for manufacturing an LED chip, which achieves the beneficial effects of the LED chip mentioned above, while being simple, convenient and easy to mass-produce. Attached Figure Description

[0044] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0045] Figure 1 This is a schematic diagram of the LED chip structure provided in Embodiment 1 of the present invention;

[0046] Figures 2.1 to 2.12 This is a schematic diagram of the structure corresponding to the steps of the LED chip fabrication method provided in the embodiments of the present invention;

[0047] Figure 3 This is a top view schematic diagram corresponding to step S06 of the preparation method provided in the embodiment of the present invention;

[0048] Symbols in the figure: 1. Growth substrate, 2. Type I semiconductor layer, 3. Active layer, 4. Type II semiconductor layer, 5. Second electrode layer, 6. First electrode connecting layer, 7. Second insulating layer, 8. First insulating layer, 9. Metal mirror, 10. Bonding layer, 11. Conductive substrate, 12. First electrode, 13. Dividing channel, 14. Through hole, 15. Electrode lead-out area. Detailed Implementation

[0049] To make the content of this invention clearer, the following description, in conjunction with the accompanying drawings, further illustrates the invention. This invention is not limited to this specific embodiment. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention.

[0050] like Figure 1 As shown, an LED chip includes:

[0051] Conductive substrate 11;

[0052] A light-emitting structure is formed on the back side of the conductive substrate 11 by bonding layer 10. The light-emitting structure includes several light-emitting arrays that are independent of each other by partition channel 13. Each light-emitting array includes a first type semiconductor layer 2, an active layer 3 and a second type semiconductor layer 4 stacked sequentially along a first direction. The first direction is perpendicular to the conductive substrate 11 and points from the light-emitting structure to the conductive substrate 11. The partition channel 13 exposes the first type semiconductor layer 2.

[0053] The second electrode layer 5 is stacked on the side surface of the second type semiconductor layer 4 corresponding to each light-emitting array that is away from the active layer 3.

[0054] The first electrode connecting layer 6 is disposed on the bottom surface of each dividing channel 13 and is interconnected with each other; the surface of the first electrode connecting layer 6 near the first type semiconductor layer 2 has an electrode lead-out area 15.

[0055] The first insulating layer 8 covers each light-emitting array, the dividing channel 13 and the first electrode connecting layer 6, and has a through hole 14 exposing the second electrode layer 5.

[0056] A metal reflector 9 is disposed on the surface of the light-emitting structure by means of an embedded through hole 14, and serves as a bonding surface;

[0057] The first electrode 12 is disposed in the electrode lead-out area 15 and forms contact with the first type semiconductor layer 2 through the first electrode connecting layer 6.

[0058] It is worth mentioning that the types of the first type semiconductor layer 2, the active layer 3, and the second type semiconductor layer 4 in the light-emitting structure of the LED chip in this embodiment are not limited. For example, the first type semiconductor layer 2 can be, but is not limited to, an N-type gallium nitride layer, and correspondingly, the second type semiconductor layer 4 can be, but is not limited to, a P-type gallium nitride layer. In one embodiment of the present invention, the first type semiconductor layer 2, the active layer 3, and the second type semiconductor layer 4 are used as the light-emitting structure of a deep ultraviolet LED.

[0059] It should be noted that the size and number of light-emitting arrays are not limited in the embodiments of the present invention, and can be adaptively adjusted according to product requirements (including size, light-emitting parameters, etc.).

[0060] In this embodiment of the invention, the electrode lead-out area 15 is disposed on one side edge of the LED chip.

[0061] In this embodiment of the invention, a second insulating layer 7 is also provided on the side wall of the dividing channel 13. The first electrode connecting layer 6 is insulated from the side walls of the light-emitting arrays on both sides through the second insulating layer 7, and the first insulating layer 8 covers the second insulating layer 7.

[0062] In this embodiment of the invention, the metal reflector 9 extends to the surface of the first insulating layer 8, completely covering each light-emitting array and the dividing channel 13.

[0063] In this embodiment of the invention, each light-emitting array is uniformly arranged through the dividing channel 13.

[0064] In this embodiment of the invention, the conductive substrate 11 includes a substrate composed of one or more of Au, Ni, Al, Cu, W, Si, Se, and GaAs.

[0065] In this embodiment of the invention, the second electrode layer 5 and the metal reflector 9 are metal reflective materials, including one or more of indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, and nickel.

[0066] In this embodiment of the invention, the first type semiconductor layer 2 has a roughened surface.

[0067] Preferably, the LED chip includes an ultraviolet LED chip.

[0068] In this embodiment of the invention, the first electrode connecting layer 6 is far from the sidewalls of the two light-emitting arrays.

[0069] This invention also provides a method for manufacturing an LED chip, the method comprising the following steps:

[0070] S01, such as Figure 2.1 As shown, a growth substrate 1 is provided;

[0071] S02, such as Figure 2.2 As shown, a light-emitting structure is grown, which includes at least a first type semiconductor layer 2, an active layer 3, and a second type semiconductor layer 4 stacked sequentially along the surface of the growth substrate 1.

[0072] It is worth mentioning that the types of the first type semiconductor layer 2, the active layer 3, and the second type semiconductor layer 4 of the light-emitting structure in the LED chip of this embodiment are not limited. For example, the first type semiconductor layer 2 can be, but is not limited to, an N-type gallium nitride layer, and correspondingly, the second type semiconductor layer 4 can be, but is not limited to, a P-type gallium nitride layer.

[0073] In one embodiment of the present invention, the first type semiconductor layer 2, the active layer 3, and the second type semiconductor layer 4 are used as the light-emitting structure of a deep ultraviolet LED.

[0074] S03, such as Figure 2.3As shown, the light-emitting structure is etched onto a portion of the first-type semiconductor layer 2 to form several light-emitting arrays that are independent of each other through the dividing channel 13;

[0075] It should be noted that the size and number of light-emitting arrays are not limited in the embodiments of the present invention, and can be adaptively adjusted according to product requirements (including size, light-emitting parameters, etc.).

[0076] S04, such as Figure 2.4 As shown, a second insulating layer 7 is fabricated, which covers the light-emitting structure and exposes the surface of the light-emitting array and the bottom of the dividing channel 13;

[0077] S05, such as Figure 2.5 As shown, a conductive second electrode layer 5 and a first electrode connecting layer 6 are formed;

[0078] The second electrode layer 5 is stacked on the surface of each light-emitting array;

[0079] The first electrode connecting layer 6 is disposed on the bottom surface of each dividing channel 13 and is interconnected with each other;

[0080] To better demonstrate the connectivity of the first electrode connectivity layer 6, this embodiment also includes... Figure 3 It should be noted that, Figure 2.6 for Figure 3 The diagram shows the structure of the part within the dashed box.

[0081] S06, such as Figure 2.6 As shown, a first insulating layer 8 is formed, which covers each light-emitting array, the dividing channel 13 and the first electrode connecting layer 6, and has a through hole 14 exposing the second electrode layer 5.

[0082] S07, such as Figure 2.7 As shown, a metal reflector 9 is formed, which is disposed on the surface of the light-emitting structure by means of embedding through a through hole 14;

[0083] S08, such as Figure 2.8 As shown, a conductive substrate 11 is provided, and a metal reflector 9 is used as a bonding surface, so that the light-emitting structure is bonded to the back side of the conductive substrate 11 through the bonding layer 10.

[0084] S09, such as Figure 2.9 As shown, remove growth substrate 1;

[0085] S10, such as Figure 2.10 As shown, by etching a portion of the first type semiconductor layer 2 to the first electrode connecting layer 6, the first electrode connecting layer 6 is made to have an exposed surface that serves as the electrode lead-out region 15.

[0086] S11, such as Figure 2.11 As shown, the first type semiconductor layer 2 has a roughened surface through a roughening process;

[0087] S12, such as Figure 2.12 As shown, a first electrode 12 is fabricated and disposed in the electrode lead-out area 15, and forms contact with the first type semiconductor layer 2 through the first electrode connecting layer 6.

[0088] In this embodiment of the invention, the metal reflector 9 extends to the surface of the first insulating layer 8, completely covering each light-emitting array and the dividing channel 13.

[0089] As can be seen from the above technical solution, the LED chip provided by the present invention includes: a plurality of light-emitting arrays that are independent of each other through the dividing channels 13; a second electrode layer 5 is stacked on the surface of the second type semiconductor layer 4 corresponding to each light-emitting array on the side away from the active layer 3; a first electrode connecting layer 6 is provided on the bottom surface of each dividing channel 13, and the surface of the first electrode connecting layer 6 near the first type semiconductor layer 2 has an electrode lead-out area 15; it also includes a first insulating layer 8 covering each light-emitting array, the dividing channels 13 and the first electrode connecting layer 6 and exposing the second electrode layer 5; and a metal reflector 9, which is disposed on the surface of the light-emitting structure by embedding through holes 14, and serves as a bonding surface to bond the conductive substrate 11 to the light-emitting structure to form an integral whole. Thus, the parallel connection of multiple vertical structure light-emitting units is realized, which can divert the total current of the LED chip to reduce the overall voltage of the LED chip; at the same time, etching the LED chip to form multiple light-emitting arrays effectively increases the side light-emitting area, especially for short-wavelength ultraviolet LED chips, more TM modes emit light, resulting in a significant light-emitting effect. Furthermore, the first electrode connecting layer 6 is disposed on the bottom surface of each segmented channel 13 and interconnected with each other, and has an electrode lead-out area 15 on the side surface near the first type semiconductor layer 2. This ensures that the first electrode 12 does not occupy additional light-emitting area. At the same time, the current spreading uniformity greatly improved by the first electrode connecting layer 6 ensures the uniformity of LED light emission, further reduces the operating voltage of the LED chip, and improves the electro-optical conversion efficiency. Moreover, based on the above structure, the epitaxial stack is connected to the conductive substrate through a metal reflector. The heat generated can be directly led out through the metal to the conductive substrate and the bottom heat sink in the subsequent packaging structure to enhance the heat dissipation capacity of the LED and improve its reliability. At the same time, it not only solves a series of problems such as severe light absorption, poor conductivity, poor mechanical properties, and weak heat dissipation performance of the growth substrate, but also, on the other hand, its current direction is approximately vertical, which can avoid current congestion and withstand larger driving currents.

[0090] Furthermore, the metal reflector 9 extends to the surface of the first insulating layer 8, completely covering each light-emitting array and the dividing channel 13; it has a good reflective effect on the light emitted from the surface and sides of the vertical structure LED chip, which can further improve the external quantum efficiency of the LED chip.

[0091] Finally, a second insulating layer 7 is provided on the side wall of the dividing channel 13. The first electrode connecting layer 6 is insulated from the side walls of the light-emitting arrays on both sides through the second insulating layer 7, and the first insulating layer 8 covers the second insulating layer 7; this can better ensure the isolation between the first electrode connecting layer 6 and the side walls of the light-emitting array.

[0092] The present invention also provides a method for manufacturing an LED chip, which achieves the beneficial effects of the LED chip mentioned above, while being simple, convenient and easy to mass-produce.

[0093] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0094] It should also be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0095] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An LED chip, characterized in that, include: Conductive substrate; A light-emitting structure is formed on the back side of the conductive substrate by bonding through a bonding layer. The light-emitting structure includes a plurality of light-emitting arrays that are independent of each other by a dividing channel. Each light-emitting array includes a first type semiconductor layer, an active layer and a second type semiconductor layer stacked sequentially along a first direction. The first direction is perpendicular to the conductive substrate and is directed from the light-emitting structure to the conductive substrate. The dividing channel exposes the first type semiconductor layer. The second electrode layer is stacked on the side surface of the second type semiconductor layer corresponding to each light-emitting array that is away from the active layer; A first electrode connecting layer is disposed on the bottom surface of each of the segmented channels and is interconnected with each other; the first electrode connecting layer has an electrode lead-out area on the side surface near the first type of semiconductor layer. A first insulating layer covers each of the light-emitting arrays, the dividing channels, and the first electrode connecting layer, and has a through-hole exposing the second electrode layer; A metal reflector is disposed on the surface of the light-emitting structure by embedding it into the through hole, and serves as a bonding surface; A first electrode is disposed in the electrode lead-out area and forms contact with a first type semiconductor layer through the first electrode connecting layer; The second insulating layer is provided on the side wall of the dividing channel. The first electrode connecting layer is insulated from the side walls of the light-emitting arrays on both sides through the second insulating layer, and the first insulating layer covers the second insulating layer. The metal reflector extends to the surface of the first insulating layer, completely covering each of the light-emitting arrays and the dividing channels.

2. The LED chip according to claim 1, characterized in that, Each of the light-emitting arrays is uniformly arranged through the segmentation channel.

3. The LED chip according to claim 1, characterized in that, The conductive substrate includes a substrate composed of one or more of Au, Ni, Al, Cu, W, Si, Se, and GaAs.

4. The LED chip according to claim 1, characterized in that, The second electrode layer and the metal reflector are made of metal reflective materials, including one or more of indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, and nickel.

5. The LED chip according to claim 1, characterized in that, The first type of semiconductor layer has a roughened surface.

6. The LED chip according to claim 1, characterized in that, The LED chip includes an ultraviolet LED chip.

7. The LED chip according to claim 1, characterized in that, The first electrode connecting layer is far from the sidewalls of the two light-emitting arrays.

8. A method for manufacturing an LED chip, characterized in that, The manufacturing method includes the following steps: S01, Provide a growth substrate; S02. Growing a light-emitting structure, wherein the light-emitting structure includes at least a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked sequentially along the surface of the growth substrate; S03. Etch the light-emitting structure onto a portion of the first type semiconductor layer to form a plurality of light-emitting arrays that are independent of each other through the dividing channels; S04. Fabricate a second insulating layer that covers the light-emitting structure and exposes the surface of the light-emitting array and the bottom of the segmentation channel; S05, forming a conductive second electrode layer and a first electrode interconnect layer; The second electrode layer is stacked on the surface of each light-emitting array; The first electrode connecting layer is disposed on the bottom surface of each of the segmented channels and is interconnected with each other; S06. A first insulating layer is formed, which covers each of the light-emitting arrays, the dividing channels and the first electrode connecting layer, and has a through hole exposing the second electrode layer; S07. A metal reflector is formed, which is disposed on the surface of the light-emitting structure by embedding the through hole; S08. A conductive substrate is provided, and the metal reflector is used as a bonding surface, so that the light-emitting structure is bonded to the back side of the conductive substrate through a bonding layer; S09. Remove the growth substrate; S10. By etching a portion of the first type semiconductor layer to the first electrode interconnect layer, the first electrode interconnect layer is made to have an exposed surface that serves as an electrode lead-out area. S11. Through a roughening process, the first type of semiconductor layer is given a roughened surface; S12. Fabricate a first electrode, which is disposed in the electrode lead-out area and forms contact with the first type semiconductor layer through the first electrode connecting layer; The metal reflector completely covers each of the light-emitting arrays and the dividing channels.

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