Laser annealing device and laser annealing system

Abstract

The present disclosure relates to a laser annealing device and a laser annealing system. It relates to the field of laser annealing technology. The laser annealing device includes a laser emitter, a compensation mechanism and a light output mirror group. The compensation mechanism includes a splitter component, a first flip component, a second flip component and a light path guiding component; the splitter component is used to split the laser emitted by the laser emitter into at least a first light beam and a second light beam; the first flip component and the second flip component are used to flip the first light beam in different directions. The light path guiding component of the light output mirror group is used to guide the first light beam to irradiate the light output mirror group after passing through the first flip component and the second flip component in sequence, and guide the second light beam to irradiate the light output mirror group and overlap with the flipped second light beam.

Description

Technical Field

[0001] The present disclosure relates to the technical field of laser annealing, and in particular to a laser annealing device and a laser annealing system. Background Art

[0002] At present, display panels using polysilicon thin film transistors are widely used. In the manufacturing process, the ELA (Excimer Laser Annealing) process is usually used to irradiate the amorphous silicon (A-Si) on the substrate to melt it and then recrystallize it into polysilicon (P-Si). However, the uniformity of the polysilicon grains formed by the existing laser annealing is low, which affects the uniformity of the electrical characteristics such as the mobility of the thin film transistor, thereby causing poor display.

[0003] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field. Summary of the invention

[0004] The purpose of the present disclosure is to overcome the deficiencies of the above-mentioned prior art and to provide a laser annealing device and a laser annealing system, which can improve the uniformity of the laser and help reduce the risk of poor display.

[0005] According to one aspect of the present disclosure, there is provided a laser annealing device, comprising:

[0006] A laser transmitter, used for emitting laser;

[0007] The compensation mechanism comprises a light splitting component, a first flipping component, a second flipping component and an optical path guiding component; the light splitting component is used to split the laser emitted by the laser transmitter into at least a first light beam and a second light beam; the first flipping component and the second flipping component are used to flip the first light beam in different directions;

[0008] The light path guiding component is used to guide the first light beam to irradiate the light output mirror group after passing through the first flip component and the second flip component in sequence, and to guide the second light beam to irradiate the light output mirror group and overlap with the flipped second light beam.

[0009] In an exemplary embodiment of the present disclosure, the first flip assembly includes a first cylindrical lens and a second cylindrical lens distributed along a first direction, and the cylindrical surfaces of the first cylindrical lens and the second cylindrical lens are arranged facing each other; the central axes of the first cylindrical lens and the second cylindrical lens are parallel and extend perpendicular to the first direction.

[0010] In an exemplary embodiment of the present disclosure, the second flip assembly includes a third cylindrical lens and a fourth cylindrical lens distributed along the first direction, and the cylindrical surfaces of the third cylindrical lens and the fourth cylindrical lens are arranged facing each other; the central axes of the third cylindrical lens and the fourth cylindrical lens are parallel and extend perpendicular to the first direction; the central axes of the third cylindrical lens and the fourth cylindrical lens are perpendicular to the central axes of the first cylindrical lens and the second cylindrical lens.

[0011] In an exemplary embodiment of the present disclosure, the first cylindrical lens, the second cylindrical lens, the third cylindrical lens and the fourth cylindrical lens are distributed in a straight line along the first direction, and the second cylindrical lens and the third cylindrical lens are an integrated structure.

[0012] In an exemplary embodiment of the present disclosure, the optical path guiding assembly includes a first reflector group and a second reflector group, the first reflector group is used to reflect the first light beam to the first flip assembly; the second reflector group is used to superimpose the first light beam passing through the second flip assembly and the second light beam from the beam splitting assembly and propagate them to the light output mirror group.

[0013] In an exemplary embodiment of the present disclosure, the beam splitting component includes a first beam splitter.

[0014] In an exemplary embodiment of the present disclosure, the first reflector group includes a first reflector; the second reflector group includes a second reflector and a second beam splitter;

[0015] The second beam splitter, the beam splitting component and the light output mirror group are distributed along a first straight line track, and the first straight line track extends along the first direction; the second beam splitter is located between the light output mirror group and the second beam splitter;

[0016] The first flip assembly, the second flip assembly, the first reflector and the second reflector are distributed along a second straight line track, the second straight line track extends along the first direction and is parallel to the first straight line track; the first flip assembly and the second flip assembly are located between the first reflector and the second reflector;

[0017] The first reflector is used to reflect the first light beam to the first flip component; the second reflector is used to reflect the first light beam passing through the second flip component to the second beam splitter; the second beam splitter is used to superimpose the first light beam from the second flip component and the second light beam from the beam splitter component and guide them to the light output mirror group.

[0018] In an exemplary embodiment of the present disclosure, the first flipping assembly is used to flip the first light beam in a long-axis direction; the second flipping assembly is used to flip the first light beam in a short-axis direction; the long-axis direction is perpendicular to the short-axis direction.

[0019] In an exemplary embodiment of the present disclosure, the transmittance of the first beam splitter and the transmittance of the second beam splitter are the same.

[0020] In an exemplary embodiment of the present disclosure, the laser annealing device further includes:

[0021] The linear light source mechanism is used to adjust the laser emitted by the laser transmitter into a linear light beam and transmit it to the light splitting component.

[0022] In an exemplary embodiment of the present disclosure, the line light source mechanism includes a first focusing component, a second focusing component and a shaping adjustment component; the first focusing component and the second focusing component are used to focus light in different directions to form a linear light beam; the shaping adjustment component is used to adjust the shape and position of the light beam.

[0023] In an exemplary embodiment of the present disclosure, the first focusing assembly includes a first focusing lens group and a second focusing lens group, and the shaping and adjusting assembly includes a first shaping lens group, a second shaping lens group, a first adjusting lens group, and a second adjusting lens group;

[0024] The laser annealing device also includes a third reflecting mirror and a fourth reflecting mirror;

[0025] The first condensing lens group, the first shaping lens group, the second condensing assembly, the second shaping lens group, the first adjusting lens group and the third reflecting mirror are distributed along a third straight line track, the third straight line track extends along the first direction and is located on a side of the first straight line track away from the second straight line track; the first shaping lens group, the second condensing assembly, the second shaping lens group and the first adjusting lens group are located between the first condensing lens group and the third reflecting mirror;

[0026] The fourth reflector, the second adjusting mirror group, the second condensing mirror group, the second beam splitter, the beam splitter assembly and the light output mirror group are distributed along the first straight line track; the second adjusting mirror group is located between the fourth reflector and the second condensing mirror group;

[0027] The third reflector is used to reflect the light beam passing through the first condensing lens group, the first shaping lens group, the second condensing assembly, the second shaping lens group, and the first adjusting lens group to the fourth reflector; the fourth reflector is used to reflect the light beam from the third reflector to the second adjusting lens group;

[0028] The first shaping mirror group and the second shaping mirror group are used to shape the light beam; the first adjusting mirror group and the second adjusting mirror group are used to adjust the size and / or position of the light beam.

[0029] In an exemplary embodiment of the present disclosure, the laser annealing device further includes:

[0030] A light collecting assembly, comprising a fifth reflector group and a focusing mirror group;

[0031] The light-emitting mirror group is used to reflect the light beam from the compensation mechanism to the fifth reflecting mirror group; the focusing mirror group is used to adjust the shape of the light beam from the fifth reflecting mirror group.

[0032] According to one aspect of the present disclosure, a laser annealing system is provided, comprising any one of the laser annealing devices described above.

[0033] The laser annealing device and system disclosed herein can split a laser beam emitted by a laser transmitter into a first beam and a second beam through a beam splitter component, flip the first beam in two different directions through a first flip component and a second flip component, and then superimpose it with the second beam to achieve mutual compensation, so that the energy of the superimposed beams is more uniform, which is beneficial to reducing the difference between polysilicon grains after laser annealing, thereby reducing the risk of poor display.

[0034] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The accompanying drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification are used to explain the principles of the present disclosure. Obviously, the accompanying drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0036] Figure 1 It is a schematic diagram of an embodiment of the laser annealing system disclosed in the present invention.

[0037] Figure 2 It is a partially enlarged view of an embodiment of the laser annealing system disclosed in the present invention.

[0038] Figure 3 Schematic diagram of a first flip assembly and a second flip assembly in one embodiment of the laser annealing system disclosed herein.

[0039] Figure 4 It is a schematic diagram of a first flip assembly and a second flip assembly in another embodiment of the laser annealing system disclosed in the present invention.

[0040] Figure 5 This is an electron microscope image of polysilicon after annealing using an existing laser annealing system.

[0041] Figure 6 This is an electron microscope image of polysilicon after annealing using an embodiment of the laser annealing system disclosed herein. DETAILED DESCRIPTION

[0042] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present disclosure will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their detailed description will be omitted. In addition, the drawings are only schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0043] The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to express an open-ended inclusive meaning and mean that additional elements / components / etc. may exist in addition to the listed elements / components / etc.; the terms "first", "second" and "third" etc. are used merely as labels and are not intended to limit the quantity of their objects.

[0044] In the related art, the driving circuit of the display panel includes a plurality of thin film transistors. For thin film transistors using the LTPS (low temperature polycrystalline silicon) process, the active layer is polycrystalline silicon with high mobility and stability. When forming thin film transistors, the ELA process can be used, that is, amorphous silicon is irradiated by a linear laser to promote the melting and recrystallization of amorphous silicon grains to obtain polycrystalline silicon. The shape of the irradiation range of the linear laser can be rectangular, with the long axis direction in the length direction and the short axis direction in the width direction.

[0045] The inventors found that the uniformity of the generated laser is low due to the low uniformity of the gas and discharge frequency used to generate the laser in the laser emitter. At the same time, spots may appear in the transparent window through which the laser passes when it is emitted due to long-term irradiation of the laser, affecting the uniformity of the laser after emission. In addition, there may be dirt on the lens used for shaping and focusing the laser, which will also affect the uniformity of the final output laser.

[0046] Based on the above findings, the non-uniform energy of the laser in the long and short axis directions causes uneven heating per unit area of ​​amorphous silicon, resulting in large regional differences in the polycrystalline silicon grains obtained after the melting and recrystallization of amorphous silicon, and it is easy to puncture the upper film layer, resulting in differences in electrical properties such as electron mobility. During the EAC (Even After Cell) lighting test phase, the large display motherboard is cut into small display panels, and each display panel is tested for lighting. The Shot Mura (uneven display due to laser irradiation) phenomenon on the display panel can be observed, which can be specifically reflected in uneven horizontal and vertical display. This problem will lead to poor uniformity of the display effect of the final product. If the power of the laser annealing device is increased by increasing the number of scans, the life of the laser annealing device will be reduced and the cost will increase.

[0047] The present disclosure provides a laser annealing device for emitting laser light to perform laser annealing on amorphous silicon. Figure 1 As shown, the laser annealing device includes a laser transmitter TO, a compensation mechanism CM and a light output mirror group M10, wherein:

[0048] The laser transmitter TO is used to emit laser;

[0049] The compensation mechanism CM includes a splitter component M1, a first flip component SA, a second flip component LA and an optical path guiding component BG; the splitter component M1 is used to split the laser emitted by the laser transmitter TO into at least a first light beam and a second light beam; the optical path guiding component BG is used to guide the first light beam to irradiate the light output mirror group M10 after passing through the first flip component SA and the second flip component LA in sequence, and to guide the second light beam to irradiate the light output mirror group M10 and overlap with the flipped second light beam; the first flip component SA and the second flip component LA are used to flip the first light beam in different directions.

[0050] The laser annealing device disclosed in the present invention can split a laser beam emitted by a laser transmitter TO into a first beam and a second beam through a beam splitter component M1, and flip the first beam in two different directions through a first flip component SA and a second flip component LA, and then superimpose it with the second beam to achieve mutual compensation, so that the energy of the superimposed beam is more uniform, which is conducive to reducing the difference in polysilicon grains after laser annealing, thereby reducing the risk of display defects. Figure 4 and Figure 5 As shown, compared to Figure 4 The polysilicon grains in Figure 5 The polysilicon grains in the 3D image are significantly more uniform.

[0051] The first beam Figure 1 and Figure 2 As shown in BS1, the second beam is Figure 1 and Figure 2As shown in BS2, the beam before splitting is as follows Figure 1 and Figure 2 As shown in BM, the superimposed beam is Figure 1 and Figure 2 Shown in BR.

[0052] The laser annealing device disclosed in the present invention is described in detail below:

[0053] The light output device 100 includes a laser transmitter TO, a compensation mechanism CM and a light output lens assembly M10, wherein:

[0054] The laser emitting device 1 can emit laser, for example:

[0055] In some embodiments of the present disclosure, the laser transmitter TO may include a laser tube (LaserTube) capable of emitting laser light, and a plurality of laser windows (Tube Window) may be provided at both ends of the laser tube, and the laser window is provided with lenses, and the lens of the laser window at one end may be a reflector, and the lens of at least one laser window at the other end is a transmission mirror. The laser tube is provided with two opposing electrodes and a mixed gas containing at least a rare gas and a halogen gas, and by applying a high-voltage pulse to the electrodes to excite the mixed gas, unstable rare gas halides are generated in the laser tube, and then photons are radiated, and the stimulated radiated photons travel back and forth in the laser tube for multiple times to form coherent continuous oscillations, and are finally emitted from the laser window at one end to form a laser beam.

[0056] Of course, in other embodiments of the present disclosure, the laser transmitter TO may also adopt other structures as long as it can emit laser.

[0057] The compensation mechanism CM may include a light splitting component M1, a first flip component SA, a second flip component LA and a light path guiding component BG, wherein:

[0058] The spectroscopic component M1 includes a first spectroscope. The specific structure of the first spectroscope is not particularly limited as long as it can achieve transmission and reflection. For example, the first spectroscope can achieve transmission and reflection at the same time by providing a magnesium fluoride coating, and the transmittance can be 50%.

[0059] The laser emitted by the laser transmitter TO can be divided into a first light beam and a second light beam by the beam splitter component M1, and pass through the first flip component SA and the second flip component LA in sequence under the guidance of the optical path guiding component BG, and irradiate the light output mirror group M10, and overlap when irradiating the light output mirror group M10, and be reflected by the light output mirror group M10, realizing the process of beam splitting-flipping-superposition, thereby improving the uniformity of the laser by superimposing the flipped light and the unflipped light.

[0060] The light output mirror group M10 may be provided with a vibration device, which may include piezoelectric ceramics, etc. After being powered on, the light output mirror group M10 may vibrate, thereby adjusting the angle of the light reflected by it, thereby adjusting the position of the light beam irradiation.

[0061] In some embodiments of the present disclosure, the first flip assembly SA and the second flip assembly LA may each include two cylindrical lenses, and the first flip assembly SA may include a first cylindrical lens SASL1 and a second cylindrical lens SASL2 distributed along a first direction X, and the cylindrical surfaces of the first cylindrical lens SASL1 and the second cylindrical lens SASL2 are arranged facing each other. At the same time, the central axes of the first cylindrical lens SASL1 and the second cylindrical lens SASL2 are parallel, and the central axes extend perpendicular to the first direction X.

[0062] The second flip assembly LA may include a third cylindrical lens LASL1 and a fourth cylindrical lens LASL2 distributed along the first direction X, and the cylindrical surfaces of the third cylindrical lens LASL1 and the fourth cylindrical lens LASL2 are arranged facing each other. At the same time, the central axes of the third cylindrical lens LASL1 and the fourth cylindrical lens LASL2 are parallel, and the central axes extend perpendicularly to the first direction X. In order to achieve the opposite flipping direction, the central axes of the third cylindrical lens LASL1 and the fourth cylindrical lens LASL2 are perpendicular to the central axes of the first cylindrical lens SASL1 and the second cylindrical lens SASL2.

[0063] like Figure 3 As shown, the light beam formed by parallel light rays S1, S2, S3 and S4 is used to indicate the first light beam. It can be seen that after passing through the first cylindrical lens SASL1 and the second cylindrical lens SASL2, it is still a parallel light beam, but the positions of light rays S1 and S2 are flipped, and the positions of light rays S3 and S4 are flipped, realizing flipping in one direction; after passing through the third cylindrical lens LASL1 and the fourth cylindrical lens LASL2, the positions of light rays S1 and S3 are flipped, and the positions of light rays S2 and S4 are flipped, realizing flipping in another direction. If the first light beam undergoes this flipping, but the second light beam does not undergo this flipping, the superposition of the two will make the energy of the superimposed light beam more uniform.

[0064] For a linear light beam, its irradiation range is roughly rectangular, i.e. linear, with its length direction being the long axis direction and its width direction being the short axis direction. For example, the first flip assembly SA can be used to flip the first light beam in the long axis direction; the second flip assembly LA can be used to flip the first light beam in the short axis direction; the long axis direction and the short axis direction are perpendicular.

[0065] Further, such as Figure 4As shown, in some embodiments of the present disclosure, the first cylindrical lens SASL1, the second cylindrical lens SASL2, the third cylindrical lens LASL1 and the fourth cylindrical lens LASL2 may be distributed along a straight line along the first direction X. The second cylindrical lens SASL2 and the third cylindrical lens LASL1 are an integrated structure. Of course, as Figure 3 As shown, the second cylindrical lens SASL2 and the third cylindrical lens LASL1 can also be arranged at intervals.

[0066] like Figure 1 and Figure 2 As shown, in some embodiments of the present disclosure, the optical path guiding component BG may include a first reflector group M2 and a second reflector group M3, the first reflector group M2 is used to reflect the first light beam to the first flip component SA; the second reflector group M3 is used to superimpose the first light beam passing through the second flip component LA and the second light beam from the splitter component M1 and propagate them to the light output mirror group M10.

[0067] Further, in one embodiment, if Figure 1 As shown, the first reflector group M2 may include a first reflector; the second reflector group M3 may include a second reflector M31 and a second beam splitter M32, wherein:

[0068] The first reflector and the second reflector M31 can both reflect light but not transmit it. The second beam splitter M32 can transmit or reflect light, and its transmittance can be the same as the first beam splitter. For example, the transmittance of both can be 50%, so as to avoid the first light beam and the second light beam having the same energy. The second beam splitter M32, the beam splitting component M1 and the light output mirror group M10 are distributed along a first straight line track, and the first straight line track extends along the first direction X; the second beam splitter M32 is located between the light output mirror group M10 and the second beam splitter M32.

[0069] The first flip assembly SA, the second flip assembly LA, the first reflector and the second reflector M31 are distributed along a second straight track, the second straight track extends along the first direction X and is parallel to the first straight track; the first flip assembly SA and the second flip assembly LA are located between the first reflector and the second reflector M31;

[0070] The first reflector is used to reflect the first light beam to the first flip component SA; the second reflector M31 is used to reflect the first light beam passing through the second flip component LA to the second beam splitter M32; the second beam splitter M32 is used to superimpose the first light beam from the second flip component LA and the second light beam from the beam splitter component M1 and guide them to the light output mirror group M10.

[0071] That is, under the guidance of the optical path guide assembly BG, the first light beam can sequentially pass through the first flip assembly SA and the second flip assembly LA and irradiate the light output mirror assembly M10, while the second light beam can irradiate the light output mirror assembly M10 without flipping.

[0072] The laser transmitter TO can emit one or more laser beams, but these laser beams are emitted radially rather than linearly, so the laser needs to be adjusted so that it is adjusted to a linear beam when irradiating the light splitting component M1. Based on this, in some embodiments of the present disclosure, the laser annealing device of the present disclosure also includes a linear light source mechanism, which can adjust the laser emitted by the laser transmitter TO into a linear beam and transmit it to the light splitting component M1. For example:

[0073] In one embodiment, if Figure 1 As shown, the line light source mechanism may include a first light focusing component LACL, a second light focusing component SACL and a shaping and adjusting component SAA; the first light focusing component LACL and the second light focusing component SACL are used to focus light in different directions to form a linear light beam; for example, the first light focusing component LACL can focus light in the long axis direction, and the second light focusing component SACL can focus light in the short axis direction. The shaping and adjusting component SAA is used to adjust the shape and position of the light beam.

[0074] Further, the first focusing assembly LACL includes a first focusing lens group LACL1 and a second focusing lens group LACL2, and the first focusing lens group LACL1 and the second focusing lens group LACL2 can use lenses such as convex lenses. The shaping and adjustment assembly SAA may include a first shaping lens group SAM, a second shaping lens group SAFT, a first adjustment lens group SAT1 and a second adjustment lens group SAT2. At the same time, the laser annealing device may also include a third reflector M8 and a fourth reflector M9.

[0075] The first condenser lens group LACL1, the first shaping lens group SAM, the second condenser assembly SACL, the second shaping lens group SAFT, the first adjustment lens group SAT1 and the third reflector M8 are distributed along the third straight line track, and the third straight line track extends along the first direction X and is located on the side of the first straight line track away from the second straight line track. The first shaping lens group SAM, the second condenser assembly SACL, the second shaping lens group SAFT, and the first adjustment lens group SAT1 are located between the first condenser lens group LACL1 and the third reflector M8. The second condenser assembly SACL and the second shaping lens group SAFT are located between the first shaping lens group SAM and the first adjustment lens group SAT1.

[0076] The fourth reflector M9, the second adjusting lens group SAT2, the second condensing lens group LACL2, the second beam splitter M32, the beam splitter assembly M1 and the light output lens group M10 are arranged along a first straight line track. The second adjusting lens group SAT2 is located between the fourth reflector M9 and the second condensing lens group LACL2.

[0077] The third reflector M8 is used to reflect the light beam passing through the first condensing lens group LACL1, the first shaping lens group SAM, the second condensing assembly SACL, the second shaping lens group SAFT, and the first adjusting lens group SAT1 to the fourth reflector M9. The fourth reflector M9 is used to reflect the light beam from the third reflector M8 to the second adjusting lens group SAT2, so as to sequentially pass through the second adjusting lens group SAT2 and the second condensing lens group LACL2 and irradiate to the light splitting assembly M1.

[0078] The first shaping lens group SAM and the second shaping lens group SAFT can be used to shape the light beam to make the shape of the light beam closer to a linear light beam. The first adjusting lens group SAT1 and the second adjusting lens group SAT2 are used to adjust the size and / or position of the light beam. The first shaping lens group SAM and the second shaping lens group SAFT and the first adjusting lens group SAT1 and the second adjusting lens group SAT2 can all use one or more convex lenses or other lenses.

[0079] In some embodiments of the present disclosure, a slit Slit for laser emission may be further provided between the second shaping lens group SAFT and the first adjusting lens group SAT1, and the slit Slit may limit the light emission range.

[0080] In some embodiments of the present disclosure, the laser annealing device further includes a focusing assembly 200, which is located on one side of the light output device 100 and may include a fifth reflecting mirror group M11 and a focusing mirror group M12, wherein:

[0081] The light-emitting mirror assembly M10 is disposed opposite to the fifth reflecting mirror assembly M11 , and can reflect the light beam (the superimposed light beam) from the compensation mechanism CM to the fifth reflecting mirror assembly M11 .

[0082] The fifth reflector group M11 can reflect the light beam from the light output mirror group M10 to the focusing mirror group M12. The focusing mirror group M12 can be used to adjust the shape of the light beam from the fifth reflector group M11. For example, the focusing mirror group M12 may include a first lens C1, a second lens C2 and a lens group PL, and the lens group PL may include a plurality of lenses, and the first lens C1, the second lens C2 and the lenses of the lens group may be convex lenses or concave lenses, wherein the first lens C1 and the second lens C2 can fine-tune the size of the laser beam in the long axis direction; the lens group PL can fine-tune the size of the beam in the short axis direction.

[0083] The focusing assembly 200 has a light outlet for emitting laser light.

[0084] The disclosed embodiment also provides a laser annealing system for laser annealing an amorphous silicon layer on a substrate to obtain a polycrystalline silicon layer. The laser annealing system may include a laser annealing device, which may be a laser annealing device of any of the above embodiments, and its specific structure is not repeated here.

[0085] In addition, the laser annealing system may further include an annealing chamber 300, which may be a hollow chamber surrounded by a shell, and a transmission device is provided inside the annealing chamber 300. At the same time, the annealing chamber 300 may also be provided with a light inlet facing the light outlet of the focusing assembly 200. The laser output by the focusing assembly 200 may enter the annealing chamber 300 through the light inlet and irradiate the amorphous silicon of the substrate. In addition, the annealing chamber 300 may be made of a light-absorbing material to prevent the laser from propagating outward.

[0086] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any modification, use or adaptation of the present disclosure, which follows the general principles of the present disclosure and includes common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present disclosure are indicated by the appended claims.

Claims

1. A laser annealing device, characterized in that: include: A laser transmitter, used for emitting laser; The compensation mechanism comprises a light splitting component, a first flipping component, a second flipping component and a light path guiding component; The beam splitting component is used to split the laser emitted by the laser transmitter into at least a first light beam and a second light beam; the first flipping component and the second flipping component are used to flip the first light beam in different directions; Light output mirror group; The optical path guiding component is used to guide the first light beam to irradiate the light output mirror group after passing through the first flip component and the second flip component in sequence, and guide the second light beam to irradiate the light output mirror group and overlap with the flipped first light beam; The first light beam is reflected by the light splitting component, and the second light beam is transmitted by the light splitting component; The first flip assembly includes a first cylindrical lens and a second cylindrical lens distributed along a first direction, and the cylindrical surfaces of the first cylindrical lens and the second cylindrical lens are arranged facing each other; the central axes of the first cylindrical lens and the second cylindrical lens are parallel and extend perpendicular to the first direction; The second flip assembly includes a third cylindrical lens and a fourth cylindrical lens distributed along the first direction, and the cylindrical surfaces of the third cylindrical lens and the fourth cylindrical lens are arranged facing each other; the central axes of the third cylindrical lens and the fourth cylindrical lens are parallel and extend perpendicularly to the first direction; the central axes of the third cylindrical lens and the fourth cylindrical lens are perpendicular to the central axes of the first cylindrical lens and the second cylindrical lens.

2. The laser annealing device according to claim 1, characterized in that: The first cylindrical lens, the second cylindrical lens, the third cylindrical lens and the fourth cylindrical lens are distributed in a straight line along the first direction, and the second cylindrical lens and the third cylindrical lens are an integrated structure.

3. The laser annealing device according to claim 1, characterized in that: The optical path guiding component includes a first reflector group and a second reflector group, the first reflector group is used to reflect the first light beam to the first flip component; the second reflector group is used to superimpose the first light beam passing through the second flip component and the second light beam from the beam splitting component and propagate them to the light output mirror group.

4. The laser annealing device according to claim 3, characterized in that: The beam splitting component includes a first beam splitter.

5. The laser annealing device according to claim 4, characterized in that: The first reflector group includes a first reflector; the second reflector group includes a second reflector and a second beam splitter; The second beam splitter, the beam splitting component and the light output mirror group are distributed along a first straight line track, and the first straight line track extends along the first direction; the second beam splitter is located between the light output mirror group and the first beam splitter; The first flip assembly, the second flip assembly, the first reflector and the second reflector are distributed along a second linear track, and the second linear track extends along the first direction and is parallel to the first linear track; The first flip assembly and the second flip assembly are located between the first reflector and the second reflector; The first reflector is used to reflect the first light beam to the first flip component; the second reflector is used to reflect the first light beam passing through the second flip component to the second beam splitter; the second beam splitter is used to superimpose the first light beam from the second flip component and the second light beam from the beam splitter component and guide them to the light output mirror group.

6. The laser annealing device according to claim 1, characterized in that: The first flipping assembly is used to flip the first light beam in the long-axis direction; the second flipping assembly is used to flip the first light beam in the short-axis direction; the long-axis direction is perpendicular to the short-axis direction.

7. The laser annealing device according to claim 5, characterized in that: The first beam splitter and the second beam splitter have the same transmittance.

8. The laser annealing device according to claim 5, characterized in that: The laser annealing device also includes: The linear light source mechanism is used to adjust the laser emitted by the laser transmitter into a linear light beam and transmit it to the light splitting component.

9. The laser annealing device according to claim 8, characterized in that: The line light source mechanism includes a first focusing component, a second focusing component and a shaping and adjusting component; the first focusing component and the second focusing component are used to focus light in different directions to form a linear light beam; the shaping and adjusting component is used to adjust the shape and position of the light beam.

10. The laser annealing device according to claim 9, characterized in that: The first focusing assembly includes a first focusing lens group and a second focusing lens group, and the shaping and adjusting assembly includes a first shaping lens group, a second shaping lens group, a first adjusting lens group and a second adjusting lens group; The laser annealing device also includes a third reflecting mirror and a fourth reflecting mirror; The first condensing lens group, the first shaping lens group, the second condensing assembly, the second shaping lens group, the first adjusting lens group and the third reflecting mirror are distributed along a third straight line track, the third straight line track extends along the first direction and is located on a side of the first straight line track away from the second straight line track; the first shaping lens group, the second condensing assembly, the second shaping lens group and the first adjusting lens group are located between the first condensing lens group and the third reflecting mirror; The fourth reflecting mirror, the second adjusting mirror group, the second condensing mirror group, the second beam splitter, the beam splitting component and the light output mirror group are distributed along the first straight line track; The second adjusting mirror group is located between the fourth reflecting mirror and the second condensing mirror group; The third reflector is used to reflect the light beam passing through the first condensing lens group, the first shaping lens group, the second condensing assembly, the second shaping lens group, and the first adjusting lens group to the fourth reflector; the fourth reflector is used to reflect the light beam from the third reflector to the second adjusting lens group; The first shaping mirror group and the second shaping mirror group are used to shape the light beam; the first adjusting mirror group and the second adjusting mirror group are used to adjust the size and / or position of the light beam.

11. The laser annealing device according to claim 1, characterized in that: The laser annealing device also includes: A light collecting assembly, comprising a fifth reflector group and a focusing mirror group; The light-emitting mirror group is used to reflect the light beam from the compensation mechanism to the fifth reflecting mirror group; the focusing mirror group is used to adjust the shape of the light beam from the fifth reflecting mirror group.

12. A laser annealing system, characterized in that: A laser annealing device comprising any one of claims 1-11.

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