Micro-electromechanical barrier and preparation method thereof, micro-electromechanical barrier assembly, and image sensor

Abstract

The present invention provides a micro-electromechanical baffle and a manufacturing method thereof, a micro-electromechanical baffle assembly and a manufacturing method thereof, an image sensor and a manufacturing method thereof, which relate to the field of image equipment and are used to reduce the power consumption of the micro-electromechanical baffle. The micro-electromechanical baffle includes a micro-electromechanical structure pattern. The micro-electromechanical structure pattern includes a support structure pattern with an opening, a baffle structure pattern that blocks part of the opening, and an actuating structure pattern connecting the support structure pattern and the baffle structure pattern; the baffle structure pattern includes two baffles; the micro-electromechanical baffle has a first working mode and a second working mode; when the micro-electromechanical baffle is in the first working mode, the actuating structure pattern drives the two baffles to move relative to each other so that there is a gap between the two baffles; when the micro-electromechanical baffle is in the second working mode, the actuating structure pattern drives the two baffles to move relative to each other so that there is no gap between the two baffles. The micro-electromechanical baffle is used to control the transmission of infrared radiation signals.

Description

Technical Field

[0001] The present invention relates to the field of image equipment, and in particular to a micro-electromechanical barrier and a manufacturing method thereof, a micro-electromechanical barrier assembly and a manufacturing method thereof, an image sensor and a manufacturing method thereof. Background Art

[0002] At present, the shutter block commonly used is generally mechanically driven by a solenoid valve or a motor, and usually one shutter block is set in one infrared detector. The size of the mechanically driven shutter block is larger than the infrared detector as a whole, and the working displacement of one shutter block is large, so sufficient space needs to be reserved. Therefore, it is easy to make the overall size of the infrared detector larger and the cost higher. In addition, the movement process and the maintenance of the stable state of the mechanically driven shutter block require the input of driving energy, and the driving power consumption is relatively large. Summary of the invention

[0003] The object of the present invention is to provide a micro-electromechanical barrier and a manufacturing method thereof, a micro-electromechanical barrier assembly and a manufacturing method thereof, an image sensor and a manufacturing method thereof, so as to reduce the cost and power consumption of the micro-electromechanical barrier and the image sensor.

[0004] In order to achieve the above object, the present invention provides the following technical solutions:

[0005] On the one hand, some embodiments of the present invention provide a micro-electromechanical baffle, wherein the micro-electromechanical baffle comprises a micro-electromechanical structure pattern; the micro-electromechanical structure pattern comprises a support structure pattern having an opening, a baffle structure pattern covering part of the opening, and an actuating structure pattern connecting the support structure pattern and the baffle structure pattern; the baffle structure pattern comprises two baffles; the micro-electromechanical baffle has a first working mode and a second working mode; when the micro-electromechanical baffle is in the first working mode, the actuating structure pattern drives the two baffles to move relative to each other so that there is a gap between the two baffles; when the micro-electromechanical baffle is in the second working mode, the actuating structure pattern drives the two baffles to move relative to each other so that there is no gap between the two baffles.

[0006] The micro-electromechanical baffle provided by the present invention realizes the switching of the micro-electromechanical baffle between the first working mode and the second working mode by setting an actuating structure pattern, thereby reducing the energy input during the switching process, and no energy input is required during the maintenance stage of the first working mode and the second working mode, thereby reducing the energy consumption of the micro-electromechanical baffle. In addition, the baffle structure pattern including two baffles provided in the present invention can reduce the movement displacement of the baffle, reduce the area of ​​the baffle, avoid the movement displacement of the baffle being too large or the area being too large to exceed the bearing limit of the micro-electromechanical baffle, thereby reducing the power consumption of the micro-electromechanical baffle.

[0007] In some embodiments, the actuation structure pattern includes two actuation beams, which extend along a first direction, and the two actuation beams are respectively a first actuation beam and a second actuation beam; when the micro-electromechanical baffle is in a first working mode, the first actuation beam is in a convex steady state along a second direction, and the second actuation beam is in a concave steady state along the second direction, and there is a gap between the two baffles; when the micro-electromechanical baffle is in a second working mode, the first actuation beam is in a concave steady state along the second direction, and the second actuation beam is in a convex steady state along the second direction, and there is no gap between the two baffles; the first direction and the second direction are both parallel to the plane where the baffle is located, and the two intersect.

[0008] In some embodiments, the configuration of the actuation beam includes a cosine curve.

[0009] In some embodiments, the micro-electromechanical barrier further includes: a first anchor point pair and a second anchor point pair disposed on the support structure pattern; the first anchor point pair is connected to two ends of the first actuating beam, and the second anchor point pair is connected to two ends of the second actuating beam; the first anchor point pair and the second anchor point pair are respectively used to receive electrical signals to form currents in corresponding actuating beams; the direction of the current in the first actuating beam is opposite to the direction of the current in the second actuating beam.

[0010] In some embodiments, the support structure pattern is a frame with a hollow center; the support structure pattern has a first center line extending along the first direction; the two actuating beams are respectively located on both sides of the first center line and are symmetrical about the first center line.

[0011] In some embodiments, the support structure pattern is in the shape of a frame with a hollow center; the support structure pattern has a second center line extending along the second direction; and each of the actuating beams is symmetrical about the second center line.

[0012] In some embodiments, the baffle structure pattern includes a base layer, a first reflective layer located on one side of the base layer, and / or a second reflective layer located on a side of the base layer away from the first reflective layer.

[0013] In some embodiments, when the baffle structure pattern includes a second reflective layer, the reflectivity of the second reflective layer is less than the reflectivity of the first reflective layer; and / or the material of the first reflective layer is the same as that of the second reflective layer.

[0014] In some embodiments, the actuating beam comprises a conductive layer; and the first reflective layer in the baffle structure pattern is electrically connected to the conductive layer in the corresponding actuating beam.

[0015] In some embodiments, a material of any one of the first reflective layer and the conductive layer includes a metal material.

[0016] On the other hand, a method for manufacturing a micro-electromechanical barrier is provided, comprising: providing a silicon substrate; etching the silicon substrate to form a support structure pattern having an opening, two actuating beams connected to the support structure pattern, and a barrier structure pattern connected to the middle of each actuating beam.

[0017] In some embodiments, etching the silicon substrate includes: forming a first photoresist layer on a first side of the silicon substrate, the first photoresist layer including a first pattern corresponding to a support structure pattern to be formed, a second pattern corresponding to an actuating beam to be formed, and a third pattern corresponding to a baffle to be formed; using the first photoresist layer as a mask, etching the silicon substrate to form a support structure pattern with an opening, two actuating beams connected to the support structure pattern, and a baffle connected to the middle of each of the actuating beams.

[0018] In some embodiments, etching the silicon substrate includes: forming a second photoresist layer on a first side of the silicon substrate, the second photoresist layer having a first hollow pattern corresponding to a support structure pattern to be formed, a second hollow pattern corresponding to an actuating beam to be formed, and a third hollow pattern corresponding to a baffle to be formed; forming a conductive film on a side of the second photoresist layer away from the silicon substrate; stripping off the second photoresist layer, retaining a portion of the conductive film located in the first hollow pattern, a portion located in the second hollow pattern, and a portion located in the third hollow pattern, to obtain a conductive layer; using the conductive layer as a mask, etching the silicon substrate to form a support structure pattern with an opening, two actuating beams connected to the support structure pattern, and a baffle connected to the middle of each of the actuating beams.

[0019] In some embodiments, before stripping the second photoresist, the preparation method further includes: etching the second side of the silicon substrate to form a groove; the second side is opposite to the first side, and the area of ​​the groove is larger than the area of ​​the opening.

[0020] In another aspect, a micro-electromechanical barrier assembly is provided. The micro-electromechanical barrier assembly comprises: a micro-electromechanical barrier as described in any of the above embodiments; and a cover plate located on one side of the micro-electromechanical barrier; the cover plate has a light-transmitting area, the light-transmitting area is arranged corresponding to the opening of the support structure pattern, and the area of ​​the light-transmitting area is greater than or equal to the area of ​​the opening of the micro-electromechanical barrier; the material of the cover plate comprises silicon.

[0021] On the other hand, a method for preparing a micro-electromechanical barrier assembly is provided, the method comprising: providing a cover plate; growing a barrier film on the cover plate, and etching the barrier film to form a micro-electromechanical barrier having a micro-electromechanical structure pattern; the micro-electromechanical structure pattern comprises a support structure pattern having an opening, a barrier structure pattern covering part of the opening, and an actuating structure pattern connecting the support structure pattern and the barrier structure pattern.

[0022] In another aspect, an image sensor is provided. The image sensor comprises: a micro-electromechanical barrier as described in any of the above embodiments, and an infrared chip arranged on one side of the micro-electromechanical barrier; the infrared chip comprises: an effective array device for sensing infrared radiation signals; when there is no gap between two barriers in the micro-electromechanical barrier, the effective array device is arranged opposite to the two barriers. When there is a gap between two barriers in the micro-electromechanical barrier, the gap between the two barriers corresponds to the effective array device.

[0023] In some embodiments, a barrier of the micro-electromechanical barrier is parallel to the infrared chip; and an area of ​​the barrier is greater than half of an area occupied by the effective array device.

[0024] In some embodiments, the image sensor further includes: a cover plate located on a side of the micro-electromechanical baffle away from the infrared chip; the cover plate has a light-transmitting area, the light-transmitting area is arranged corresponding to the effective array device, and the area of ​​the light-transmitting area is greater than or equal to the area of ​​the effective array device; the material of the cover plate includes silicon.

[0025] In some embodiments, the image sensor further includes: a cover plate located between the micro-electromechanical barrier and the infrared chip; the cover plate has a light-transmitting area, the light-transmitting area is arranged corresponding to the effective array device, and the area of ​​the light-transmitting area is greater than or equal to the area of ​​the effective array device; the material of the cover plate includes silicon.

[0026] On the other hand, an image sensor is provided, comprising: a micro-electromechanical barrier assembly as in the above embodiment, and an infrared chip located on one side of the micro-electromechanical barrier assembly, wherein the infrared chip is located on a side close to the micro-electromechanical barrier in the micro-electromechanical barrier assembly.

[0027] On the other hand, a method for preparing an image sensor is provided, the method comprising: providing a micro-electromechanical barrier as described in any of the above embodiments; providing an infrared chip; bonding the micro-electromechanical barrier to the infrared chip to form an image sensor body; providing a cover plate; bonding the image sensor body to the cover plate, wherein the cover plate is located close to a side of the image sensor body where the micro-electromechanical barrier is located, to form the image sensor.

[0028] On the other hand, a method for preparing an image sensor is provided, the method comprising: providing an infrared chip; providing a cover plate; bonding the infrared chip to the cover plate to form an infrared chip assembly; providing a micro-electromechanical barrier as described in any of the above embodiments; bonding the infrared chip assembly to the micro-electromechanical barrier to form the image sensor, wherein the micro-electromechanical barrier is close to a side of the infrared chip assembly where the cover plate is located.

[0029] On the other hand, a method for preparing an image sensor is provided, the method comprising: providing an infrared chip; growing a baffle film on the infrared chip, and etching the baffle film to form a micro-electromechanical baffle having a micro-electromechanical structure pattern; the micro-electromechanical structure pattern comprises a support structure pattern having an opening, a baffle structure pattern that blocks part of the opening, and an actuating structure pattern connecting the support structure pattern and the baffle structure pattern; the infrared chip and the micro-electromechanical baffle constitute an image sensor body; providing a cover plate; bonding the image sensor body to the cover plate to form the image sensor; wherein the cover plate is close to one side of the micro-electromechanical baffle in the image sensor body.

[0030] On the other hand, a method for preparing an image sensor is provided, the method comprising: providing a micro-electromechanical barrier assembly as described in the above embodiment; providing an infrared chip; bonding the micro-electromechanical barrier assembly to the infrared chip to form the image sensor; wherein the infrared chip is close to one side of the micro-electromechanical barrier in the micro-electromechanical barrier assembly.

[0031] The beneficial effects achieved by the method for manufacturing a micro-electromechanical barrier, the micro-electromechanical barrier assembly and the manufacturing method thereof, the image sensor and the manufacturing method thereof provided by the present invention are the same as the beneficial effects achieved by the micro-electromechanical barrier provided by the above technical solution, and are not elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A structural diagram of an infrared detector provided for some embodiments of the present invention;

[0033] Figure 2 A structural diagram of another infrared detector provided for some embodiments of the present invention;

[0034] Figure 3 A structural diagram of another infrared detector provided for some embodiments of the present invention;

[0035] Figure 4 A structural diagram of another infrared detector provided for some embodiments of the present invention;

[0036] Figure 5A structural diagram of another infrared detector provided for some embodiments of the present invention;

[0037] Figure 6 A structural diagram of another infrared detector provided for some embodiments of the present invention;

[0038] Figure 7 A structural diagram of another infrared detector provided for some embodiments of the present invention;

[0039] Figure 8a A structural diagram of a micro-electromechanical barrier provided in some embodiments of the present invention;

[0040] Figure 8b A structural diagram of another micro-electromechanical barrier provided for some embodiments of the present invention;

[0041] Fig. 9 A structural diagram of another micro-electromechanical barrier provided for some embodiments of the present invention;

[0042] Fig.10 A structural diagram of another micro-electromechanical barrier provided for some embodiments of the present invention;

[0043] Fig.11 A structural diagram of a transition of an actuating structure pattern from an upward convex stable state to a downward concave stable state provided in some embodiments of the present invention;

[0044] Fig.12 A graph showing the relationship between the reaction force and the displacement of the midpoint of an actuating structure pattern during the transition from an upward convex steady state to a downward concave steady state provided by some embodiments of the present invention;

[0045] Fig.13a A manufacturing flow chart of a micro-electromechanical barrier provided in some embodiments of the present invention;

[0046] Fig.13b Another manufacturing flow chart of a micro-electromechanical barrier provided in some embodiments of the present invention;

[0047] Fig.13c A flowchart of manufacturing another micro-electromechanical barrier provided for some embodiments of the present invention;

[0048] Figure 14 to Figure 16 A diagram of the manufacturing steps of a micro-electromechanical barrier provided in some embodiments of the present invention;

[0049] Figure 17 to Figure 22 Another manufacturing step diagram of a micro-electromechanical system baffle provided in some embodiments of the present invention;

[0050] Fig.23 A structural diagram of a micro-electromechanical barrier assembly provided for some embodiments of the present invention;

[0051] Fig.24a A manufacturing flow chart of a micro-electromechanical barrier assembly provided for some embodiments of the present invention;

[0052] Figure 24b to Figure 24c A diagram of the manufacturing steps of a micro-electromechanical barrier assembly provided in some embodiments of the present invention;

[0053] Fig.25a A manufacturing flow chart of an image sensor provided in some embodiments of the present invention;

[0054] Figure 25b to Figure 25c A diagram of manufacturing steps of an image sensor provided by some embodiments of the present invention;

[0055] Fig.26a A flowchart of manufacturing another image sensor provided for some embodiments of the present invention;

[0056] Figure 26b to Figure 26d A diagram of manufacturing steps of another image sensor provided by some embodiments of the present invention;

[0057] Fig.27a A flowchart of manufacturing another image sensor provided in some embodiments of the present invention;

[0058] Figure 27b to Figure 27d A diagram of manufacturing steps of another image sensor provided in some embodiments of the present invention;

[0059] Fig.28a A flowchart of manufacturing another image sensor provided in some embodiments of the present invention;

[0060] Figure 28b to Figure 28d A diagram of the manufacturing steps of another image sensor provided in some embodiments of the present invention. DETAILED DESCRIPTION

[0061] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments provided by the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.

[0062] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms thereof, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open, inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present invention. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics described may be included in any one or more embodiments or examples in any appropriate manner.

[0063] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present invention, unless otherwise specified, "plurality" means two or more.

[0064] In the description of this document, it should be understood that the terms "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings; they are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0065] In the description of this article, it should be noted that, unless otherwise clearly specified and limited, the terms "install", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0066] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0067] Some embodiments of the present invention provide an image sensor 1. Figure 1 As shown, the image sensor 1 includes: a micro-electromechanical barrier 10 and an infrared chip 20 disposed on one side of the micro-electromechanical barrier 10. The image sensor 1 can convert the infrared radiation signal incident to the infrared chip 20 into an electrical signal for output.

[0068] Exemplarily, the micro-electro-mechanical baffle 10 is a baffle designed and formed using MEMS (Micro-Electro-Mechanical, micro-electromechanical system) technology.

[0069] The micro-electromechanical barrier formed by MEMS technology is based on a silicon substrate (or wafer substrate) and is manufactured by micro-nano manufacturing technology (including photolithography technology, etching technology, etc.) and is formed by splitting. Therefore, the size of the micro-electromechanical barrier 10 formed is small. In the process of assembling the image sensor 1, it can avoid occupying a large assembly space, thereby reducing the size of the image sensor 1. In addition, since the cost of the micro-electromechanical barrier 10 is low, the manufacturing cost of the image sensor 1 can be reduced.

[0070] Exemplarily, the micro-electromechanical barrier 10 can allow infrared radiation signals to pass through or block infrared radiation signals.

[0071] During the use of the image sensor 1, since the external temperature and humidity are different during different detection processes, the parameters of the infrared chip 20 need to be readjusted to achieve a suitable detection effect. Therefore, the micro-electromechanical shield 10 needs to be used to shield the infrared radiation signal incident to the infrared chip 20 (such as Figure 2 As shown), the infrared chip 20 can perform operations such as parameter reset or calibration without the incidence of infrared radiation signals from the external environment, thereby making the signal collected by the image sensor 1 more accurate.

[0072] Exemplarily, the image sensor 1 may be an infrared detector, etc., and the present invention is described by taking an infrared detector as an example.

[0073] In some examples, such as Figure 1 As shown, the infrared chip 20 includes: an effective array device 210, and the effective array device 210 is used to sense infrared radiation signals.

[0074] For example, when the micro-electromechanical barrier 10 allows infrared radiation signals to pass through, the infrared chip 20 can be used to sense the infrared radiation signals that pass through the micro-electromechanical barrier 10 and enter the effective array device 210, and convert them into electrical signals for output. When the micro-electromechanical barrier 10 blocks infrared radiation signals from the external environment, the infrared chip 20 can perform operations such as parameter reset or calibration.

[0075] Exemplarily, the MEMS barrier 10 includes: a MEMS structure pattern.

[0076] For example, the MEMS structure pattern is a combination of multiple patterns with specific shapes formed by etching on the same silicon substrate (or wafer substrate). Each pattern with a specific shape (such as the support structure pattern, the baffle structure pattern and the actuation structure pattern mentioned below) constitutes each functional structure of the MEMS baffle 10 (such as the baffle, the actuation beam, etc. mentioned below).

[0077] For example, Figure 3 and Figure 4 As shown, the micro-electromechanical structure pattern includes a barrier structure pattern 110 .

[0078] For example, the barrier structure pattern 110 may include at least one barrier.

[0079] For example, the barrier film structure pattern 110 includes two barrier films 111 .

[0080] For example, the two blocking pieces 111 are respectively a first blocking piece 111 a and a second blocking piece 111 b .

[0081] For example, the shape of the blocking piece 111 can be any shape such as a quadrilateral (such as a rectangle), a pentagon, or a hexagon.

[0082] like Figure 3 and Figure 4As shown, the micro-electromechanical baffle 10 has a first working mode and a second working mode. When the micro-electromechanical baffle 10 is in the first working mode, the two baffles 111 can move relative to each other so that there is a gap between the two baffles, and the micro-electromechanical baffle 10 is in an open state, allowing the infrared radiation signal to pass through. When the micro-electromechanical baffle 10 is in the second working mode, the two baffles 111 can move relative to each other so that there is no gap between the two baffles, and the micro-electromechanical baffle 10 is in a closed state, shielding the infrared radiation signal and preventing the infrared radiation signal from passing through. For example, when the first baffle 111a moves upward along the second direction Y to a certain position, and the second baffle 111b moves downward along the second direction Y to another position, there is a gap between the first baffle 111a and the second baffle 111b, and the micro-electromechanical baffle 10 is in an open state. For another example, when the first baffle 111a moves downward along the second direction Y to a certain position and the second baffle 111b moves upward along the second direction Y to another position, there is no gap between the first baffle 111a and the second baffle 111b, and they are in contact with each other, and the MEMS baffle 10 is in a closed state.

[0083] By adopting the above-mentioned setting method, two baffles 111 are set, compared with the shutter chip using one baffle in the prior art, the movement displacement of the baffle can be reduced, the area of ​​the baffle can be reduced, and the movement displacement of the baffle is too large or the area is too large to exceed the tolerance limit of the micro-electromechanical baffle.

[0084] In some examples, such as Figure 1 and Figure 3 As shown, when there is no gap between the two blocking pieces 111 in the micro-electromechanical blocking piece 10 , the effective array device 210 is arranged opposite to the two blocking pieces 111 .

[0085] The above-mentioned facing arrangement means that the center of the effective array device 210 coincides with the center of the structure formed by the two blocking pieces 111 .

[0086] It is understandable that the shape of the effective array device 210 may be the same or substantially the same as the overall shape when the two blocking pieces 111 are not spaced apart, so that the two blocking pieces 111 can effectively shield the effective array device 210 .

[0087] For example, Figure 2 As shown, when there is no gap between the two baffles 111, the two baffles 111 can block the infrared radiation signal incident to the effective array device 210, so that the effective array device 210 can perform operations such as parameter reset or calibration without the incidence of infrared radiation signals from the external environment, thereby making the signal collected by the image sensor 1 more accurate.

[0088] In some examples, such as Figure 4As shown, when there is a gap between two blocking sheets 111 in the micro-electromechanical blocking sheet 10 , the gap between the two blocking sheets 111 corresponds to the effective array device 210 .

[0089] Exemplarily, when the MEMS baffle 10 is in the second working mode, the two baffles 111 are staggered from the effective array device 210 and cannot block the effective array device 210 , that is, cannot block the infrared radiation signal incident to the effective array device 210 .

[0090] For example, the space between the two blocking pieces 111 may be directly opposite to the effective array device 210 , and the center of the space between the two blocking pieces 111 may coincide with the center of the effective array device 210 .

[0091] For another example, the center of the interval between the two blocking pieces 111 may not coincide with the center of the effective array device 210 .

[0092] In some examples, such as Figure 1 , Figure 3 and Figure 4 As shown, the baffle 111 is parallel to the infrared chip 20 .

[0093] For example, the plane where the baffle 111 is located is parallel to the plane where the infrared chip 20 is located. The baffle 111 can move within the plane where the baffle 111 is located. The two baffles 111 are in the same plane.

[0094] Exemplarily, the area of ​​the baffle 111 is greater than half of the area occupied by the effective array device 210 .

[0095] For example, when there is no gap between the two baffles 111, the sum of the areas of the two baffles 111 is greater than the area of ​​the effective array device 210. At this time, the two baffles 111 can completely cover the effective array device 210, and then can completely block the infrared radiation signal emitted from the direction of the baffle 111 to the direction of the effective array device 210, so as to prevent the infrared radiation signal of the external environment from being incident on the effective array device 210, so that the effective array device 210 can perform operations such as parameter reset or calibration, so that the signal collected by the image sensor 1 is more accurate. In addition, compared with the case of setting one baffle in the prior art, the use of two baffles 111 can reduce the area of ​​a single baffle 111 and the displacement of a single baffle 111, thereby reducing the size of the micro-electromechanical baffle 10 and the image sensor 1.

[0096] In some examples, such as Figure 1 As shown, the image sensor 1 further includes a cover plate 30 .

[0097] The cover plate 30 can encapsulate and protect the infrared chip 20 and the micro-electromechanical barrier 10 .

[0098] For example, the cover plate 30 may be used for wafer-level packaging, ceramic tube package or other forms of packaging.

[0099] Exemplarily, the material of the cover plate 30 includes silicon.

[0100] Since the MEMS baffle 10 is made of silicon material as a whole, and the infrared chip 20 can also be made of silicon material as a basis, when the material of the cover plate 30 includes silicon, the three materials can be the same. Therefore, the MEMS baffle 10, the cover plate 30 and the infrared chip 20 can be formed in the same preparation process.

[0101] It is understandable that there are many ways to package the infrared chip 20 and the micro-electromechanical barrier 10 , which can be configured according to actual needs, and the present invention does not limit this.

[0102] The processing method of the MEMS baffle 10 is compatible with the processing method of the infrared chip 20 , so that the infrared chip 20 and the MEMS baffle 10 are more compactly matched, thereby reducing the size of the image sensor 1 and improving the efficiency of the image sensor 1 .

[0103] For example, Figure 1 As shown, the cover plate 30 has a light-transmitting area TA, and the light-transmitting area TA is arranged corresponding to the effective array device 210 .

[0104] For example, the light-transmitting area TA can allow infrared radiation signals to pass through, thereby avoiding loss of infrared radiation signals incident on the effective array device 210 and improving the accuracy of signals collected by the image sensor 1 .

[0105] Exemplarily, the area of ​​the light-transmitting region TA is greater than or equal to the area of ​​the effective array device 210. Thus, it is possible to avoid shielding the infrared radiation signal from the area other than the light-transmitting region TA in the cover plate 30, thereby improving the accuracy of the signal collected by the image sensor 1.

[0106] In some examples, such as Figure 1 As shown, the cover plate 30 is located on a side of the micro-electromechanical barrier 10 away from the infrared chip 20 .

[0107] In other examples, such as Figure 7 As shown, the cover plate 30 is located between the micro-electromechanical barrier 10 and the infrared chip 20 .

[0108] Of course, if Figure 5 to Figure 7 As shown, the image sensor 1 further includes a connection layer 40 .

[0109] For example, the connection layer 40 may be made of an adhesive material, such as solder.

[0110] Exemplarily, the connection layer 40 may be located between the infrared chip 20 and the cover plate 30 to connect the infrared chip 20 and the cover plate 30. The connection layer 40 may also be located between the cover plate 30 and the micro-electro-mechanical barrier 10 to connect the cover plate 30 and the micro-electro-mechanical barrier 10.

[0111] In some examples, such as Figure 3 As shown, the MEMS barrier 10 further includes a support structure pattern 120 , and the support structure pattern 120 has an opening 121 .

[0112] Exemplarily, the blocking piece structure pattern 110 blocks a portion of the opening 121 .

[0113] For example, the support structure pattern 120 may provide support.

[0114] The shapes of the opening 121 can be various and can be selected according to actual conditions, and the present invention is not limited to this.

[0115] For example, the shape of the opening 121 may include a rectangle, etc.

[0116] Exemplarily, the MEMS barrier 10 further includes: an actuating structure pattern 13 connecting the support structure pattern 120 and the barrier structure pattern 110 .

[0117] For example, the actuation structure pattern 13 may have two stable shape states (referred to as stable states). The actuation structure pattern 13 may jump from one stable state to another stable state under the action of an external force (such as the Ampere force mentioned below), and the actuation structure pattern 13 does not deform and remains stable in the two stable states without the need for additional external force or energy.

[0118] In some examples, such as Fig. 9 and Fig.10 As shown, the MEMS shutter 10 has two working modes.

[0119] Exemplarily, the above two working modes may include a first working mode and a second working mode. For example, the first working mode may correspond to the above micro-electromechanical shutter 10 being in an open state, and the shutter 111 does not block the effective array device 210. The second working mode may correspond to the above micro-electromechanical shutter 10 being in a closed state, and the shutter 111 blocks the effective array device 210.

[0120] Exemplarily, when the micro-electromechanical barrier 10 is in the first working mode ( Fig. 9 As shown in FIG. 1 , the actuating structure pattern 13 drives the two baffles 111 to move relative to each other, so that there is a gap between the two baffles 111 .

[0121] Here, the spacing area between the two baffles 111 just exposes the effective array device 210, so that the infrared radiation signal can be incident on the effective array device 210, and the effective array device 210 converts the infrared radiation signal into an electrical signal, etc., so that the image sensor 1 can collect the signal.

[0122] Exemplarily, when the micro-electromechanical barrier 10 is in the second working mode ( Fig.10 As shown), the actuating structure pattern 13 drives the two baffles 111 to move relative to each other so that there is no gap between the two baffles 111.

[0123] Here, no gap between the two baffles 111 means that one edge of the first baffle 111a contacts one edge of the second baffle 111b, so that there is no gap between the first baffle 111a and the second baffle 111b, and they are connected as a whole, so that the whole can completely block the effective array device 210, so that the effective array device 210 and the infrared chip 20 can be calibrated or reset, etc., so that the image sensor 1 can collect signals more accurately.

[0124] Since the actuation structure pattern 13 has two stable states, no external energy is required when the MEMS shutter 10 is in the first working mode and when the MEMS shutter 10 is in the second working mode. Therefore, the MEMS shutter 10 provided by the present invention only requires energy input during the switching process between the first working mode and the second working mode, and no energy input is required during the stable continuation of the first working mode and the second working mode, thereby reducing energy input and energy consumption.

[0125] In some examples, the actuation structure pattern 13 includes two actuation beams 130 , and the two actuation beams 130 are respectively a first actuation beam 131 and a second actuation beam 132 .

[0126] When the MEMS baffle 10 is in the first working mode, the first actuating beam 131 is in a convex steady state along the second direction Y, the second actuating beam 132 is in a concave steady state along the second direction Y, and there is a gap between the two baffles 111 .

[0127] When the MEMS baffle 10 is in the second working mode, the first actuating beam 131 is in a concave steady state along the second direction Y, the second actuating beam 132 is in a convex steady state along the second direction Y, and there is no gap between the two baffles 111 .

[0128] It should be noted that the first direction X and the second direction Y are perpendicular to each other, and the extension direction of the actuating beam 130 and the convex (or concave) stable direction are perpendicular to each other.

[0129] Exemplarily, the actuating beam 130 extends along the first direction X and is connected to opposite first and second sides of the supporting structure pattern 120 .

[0130] For example, the actuating beam 130 has a first end connected to a first side of the supporting structure pattern 120 and a second end connected to a second side of the supporting structure pattern 120 .

[0131] Exemplarily, a baffle 111 is connected to the middle of an actuating beam 130. Therefore, when the baffle 111 is moved by an external force, the corresponding actuating beam 130 can be driven to jump, so that the actuating beam 130 jumps from one stable state to another stable state.

[0132] In some examples, such as Fig.11 As shown, the configuration of the actuation beam 130 includes a cosine curve.

[0133] For example, the configuration of the actuating beam 130 may be a half-period cosine curve.

[0134] For example, the above-mentioned cosine curve type actuating beam 130 may be in a convex steady state in a default state, such as Fig.11 Under the action of the external force Fo along the second direction Y (the external force may be the Ampere force mentioned below), the convex steady state may be deformed ( Fig.11 The shape of (b) is a shape in the deformation process) jumps to the concave steady state ( Fig.11 (c) in the form of).

[0135] The following is an analysis of the external force F that needs to be provided when the cosine curve-shaped actuating beam 130 deforms from a convex steady state to a concave steady state.

[0136] After the external force Fo is applied, the actuating beam 130 generates a reaction force Fc in the opposite direction. By plotting the displacement D of the midpoint MP of the beam 130 as the abscissa and the reaction force Fc of the actuating beam 130 as the ordinate, we can obtain Fig.12 .

[0137] Combination Fig.11 and Fig.12, the cosine curve-shaped actuating beam 130 is in a default state, that is, a convex steady state, and an external force Fo is applied to it downward along the second direction Y. The midpoint MP begins to move downward under the action of the external force Fo, and at the same time, the actuating beam 130 generates an upward reaction force Fc along the second direction Y. In the process of the midpoint MP moving from 0 to the position of Dtop, the value of the reaction force Fc increases with the increase of the displacement D, and the relationship between the reaction force Fc and the displacement D conforms to Hooke's law. When the displacement D of the midpoint MP reaches Dtop, the upward reaction force Fc along the second direction Y reaches a maximum value Fctop. When the displacement D of the midpoint MP exceeds Dtop, the value of the reaction force Fc gradually decreases until the displacement D of the midpoint MP reaches Dmid, and the value of the reaction force Fc decreases to 0. The midpoint MP continues to move downward along the second direction Y, and the direction of the reaction force Fc changes to upward along the second direction Y. As the displacement D increases, the value of the reaction force Fc increases. When the displacement D reaches Dbot, the value of the reaction force Fc in the second direction Y reaches the maximum value Fcbot. As the displacement D continues to increase from Dbot to Dend, the value of the reaction force Fc in the second direction Y gradually decreases. When the displacement D is Dend, the cosine curve-shaped actuating beam 130 is in a concave steady state.

[0138] From the above, it can be seen that in the process of the displacement of the midpoint MP from 0 to Dtop, the relationship between the reaction force Fc and the displacement D conforms to Hooke's law, while in the process of the displacement of the midpoint MP from Dtop to Dend, the relationship between the reaction force Fc and the displacement D does not conform to Hooke's law.

[0139] It can be understood that an external force Fo having the same value as the reaction force Fc in the above-mentioned actuating beam 130 but opposite direction can be provided to realize the movement of the midpoint MP, and also to realize the jump of the actuating beam 130 from one stable state to another stable state. After the movement displacement of the midpoint MP reaches Dmid, the external force Fo can be stopped, and the actuating beam 130 can use its own reaction force Fc to realize the jump to the second stable state. Thus, the external force can be provided only when the movement displacement D is in the range of 0 to Dmid, and no external force is required in the range of Dmid to Dend, so the power consumption of the micro-electromechanical baffle 10 can be reduced. In addition, since the reaction force Fc gradually decreases when the movement displacement D is in the range of Dtop to Dmid, a smaller external force Fo can be provided to realize the movement of the midpoint MP, so the micro-electromechanical baffle 10 of the present invention can achieve a larger displacement with a smaller energy input, so that the efficiency of the micro-electromechanical baffle 10 is higher.

[0140] In some examples, such as Figure 3As shown, the MEMS shutter 10 further includes a first anchor point pair 140A and a second anchor point pair 140B disposed on the support structure pattern 120 .

[0141] For example, the first anchor point pair 140A includes two anchor points located at two opposite sides of the support structure pattern 120 along the second direction Y. The second anchor point pair 140B includes two anchor points located at two opposite sides of the support structure pattern 120 along the second direction Y.

[0142] Exemplarily, the first anchor point pair 140A is connected to two ends of the first actuating beam 131 , and the second anchor point pair 140B is connected to two ends of the second actuating beam 132 .

[0143] Exemplarily, the first anchor point pair 140A and the second anchor point pair 140B are respectively used to receive electrical signals to form currents in the corresponding actuation structure pattern 13. The direction of the current in the first actuation beam 131 is opposite to the direction of the current in the second actuation beam 132.

[0144] For example, the electrical signal may be a voltage signal or the like.

[0145] For example, the direction of the current in the first actuating beam 131 and the direction of the current in the second actuating beam 132 may be one to the left along the first direction X and one to the right along the first direction X.

[0146] In some examples, such as Figure 8a As shown, during the switching process between the first working mode and the second working mode, the MEMS baffle 10 needs to add an external magnetic field, which can be provided by the magnetic field structure 150 .

[0147] For example, the magnetic field structure 150 may be a powered coil or a magnet.

[0148] Exemplarily, the magnetic field structure 150 is used to provide a magnetic field in a direction perpendicular to the plane where the baffle 111 is located.

[0149] For example, the direction of the magnetic field provided by the magnetic field structure 150 may be perpendicular to the plane where the baffle 111 is located and downward (eg, Figure 8a The magnetic field direction is shown in FIG. 1 ), or it may be a direction perpendicular to the plane where the baffle 111 is located, and upward.

[0150] by Fig. 9 and Fig.10 The partial structure of the image sensor 1 shown is used as an example to explain the working process of the micro-electromechanical barrier 10 .

[0151] For example, the direction of the magnetic field provided by the magnetic field structure 150 is perpendicular to the inward direction of the baffle 111 . Fig. 9In the embodiment, the micro-electromechanical baffle 10 is in the first working mode, the first actuating beam 131 is in an upward convex steady state, the second actuating beam 132 is in a downward concave steady state, and there is a gap between the two baffles 111, so that the effective array device 210 under the baffle 111 can be exposed, and the external infrared radiation signal can pass through the gap and be incident on the effective array device 210, so that the effective array device 210 can sense the infrared radiation signal and convert it into an electrical signal, etc., so that the image sensor 1 can collect the signal.

[0152] For another example, when the image sensor 1 needs to be calibrated or reset (when the micro-electromechanical barrier 10 is switched from the first working mode to the second working mode), a current is provided to the first anchor point pair 140A in the first direction X to the left, and the first barrier 111a is subjected to a downward Ampere force, thereby causing the first barrier 111a to move downward. Since the first barrier 111a is connected to the middle of the first actuating beam 131, the first barrier 111a will drive the middle of the first actuating beam 131 to move downward. When the displacement distance of the middle of the first actuating beam 131 reaches Dmid mentioned above, the current can be stopped from being provided to the first anchor point pair 140A, or the magnetic field structure 150 can be stopped from providing a magnetic field. At this time, the first actuating beam 131 can reach a concave steady state under the action of its own reaction force. When the first actuating beam 131 jumps to the concave steady state, the first barrier 111a will move downward along with the middle of the first actuating beam 131. In addition, when the current along the first direction X to the left is provided to the first anchor point pair 140A, and the current along the first direction X to the right is provided to the second anchor point pair 140B, the second baffle 111b will be subjected to an upward Ampere force, thereby causing the second baffle 111b to move upward. Since the second baffle 111b is connected to the middle part of the second actuating beam 132, the second baffle 111b will drive the middle part of the second actuating beam 132 to move downward. When the displacement of the middle part of the second actuating beam 132 reaches the Dmid mentioned above, the current can be stopped from being provided to the second anchor point pair 140B, or the magnetic field structure 150 can be stopped from providing a magnetic field. At this time, the second actuating beam 132 can reach an upward convex steady state under the action of its own reaction force. When the second actuating beam 132 jumps to the upward convex steady state, the second baffle 111b will move upward with the middle part of the second actuating beam 132. Therefore, the first baffle 111a moves downward and the second baffle 111b moves upward until there is no gap between the first baffle 111a and the second baffle 111b, and the two baffles 111 block the effective array device 210, so that the external infrared radiation signal cannot be incident on the effective array device 210, so that the effective array device 210 and the infrared chip 20 can be calibrated or reset, so that the image sensor 1 can collect signals more accurately.

[0153] It is understandable that when the MEMS shield 10 is switched from the second working mode to the first working mode, the first anchor point pair 140A and the second anchor point pair 140B may be provided with a current in the opposite direction to that in the above example. Of course, the direction of the magnetic field provided by the magnetic field structure 150 may be changed, while the direction of the current provided to the first anchor point pair 140A and the second anchor point pair 140B remains unchanged, so as to achieve the switching of the MEMS shield 10 from the second working mode to the first working mode.

[0154] The present invention adopts the above-mentioned setting mode to realize the conversion of the micro-electromechanical shutter 10 from the first working mode to the second working mode, which can make the switching speed of the working position faster, compared with the traditional mechanical shutter shutter, from tens of milliseconds to several milliseconds, greatly improving the working efficiency of the micro-electromechanical shutter 10 and the image sensor 1. In addition, the actuating structure pattern 13 is provided, the structure is simple, and it can be stably in a convex or concave state, avoiding energy consumption in a steady state, and reducing the energy consumption of the micro-electromechanical shutter 10 and the image sensor 1.

[0155] In some examples, such as Figure 8b As shown, the support structure pattern 120 is a frame with a hollow middle portion, and the support structure pattern 120 has a first center line OL extending along the first direction X.

[0156] Exemplarily, the two actuating structure patterns 13 are respectively located on both sides of the first center line OL and are symmetrical about the first center line OL. Therefore, when the MEMS barrier 10 switches from the first working mode to the second working mode, the two barriers 111 respectively connected to the two actuating structure patterns 13 can move the same distance, and the currents provided to the first anchor point pair 140A and the second anchor point pair 140B can be equal, thereby improving the working efficiency of the MEMS barrier 10 and the image sensor 1.

[0157] In some examples, such as Figure 8b As shown, the support structure pattern 120 has a second center line TL extending along the second direction Y. Each actuation structure pattern 13 is symmetrical about the second center line TL.

[0158] For example, the actuating structure pattern 13 portions on the left and right sides of the blocking piece 111 are symmetrical with respect to the blocking piece 111 .

[0159] With the above arrangement, when the baffle 111 drives the actuating structure pattern 13 to move, the force on both sides of the baffle 111 can be uniform, thereby ensuring that the baffle 111 moves within the plane where the baffle 111 is located, ensuring that the baffle 111 blocks or exposes the effective array device 210.

[0160] In some examples, the barrier structure pattern 11 includes a base layer 11 a , a first reflective layer 11 b located on a first side of the base layer 11 a , and / or a second reflective layer located on a second side of the base layer 11 a .

[0161] Exemplarily, after the micro-electromechanical barrier having the barrier structure pattern 11 is assembled with an infrared chip to form an image sensor, the first reflective layer 11 b is closer to the effective array device of the infrared chip than the second reflective layer 11 c.

[0162] For example, Fig. 22 As shown, the barrier structure pattern 11 may include a base layer 11 a and a first reflective layer 11 b located on a first side of the base layer 11 a .

[0163] For another example, the barrier structure pattern 11 may include a base layer 11 a and a second reflective layer 11 c located second to the base layer 11 a .

[0164] For another example, the barrier structure pattern 11 may include a base layer 11 a , and a first reflective layer 11 b and a second reflective layer 11 c located on opposite sides of the base layer 11 a .

[0165] Exemplarily, when the barrier structure pattern 11 includes the first reflective layer 11b and the second reflective layer 11c, the reflectivity of the second reflective layer is less than that of the first reflective layer; and / or the material of the first reflective layer is the same as that of the second reflective layer.

[0166] For example, when the baffle structure pattern 11 includes the first reflective layer 11b and the second reflective layer 11c, the reflectivity of the second reflective layer 11c is less than the reflectivity of the first reflective layer 11b. Since the second reflective layer 11c is closer to the effective array device of the infrared chip, the baffle 111 including the second reflective layer 11c can have a better shielding effect, and can better shield the infrared radiation signal incident to the effective array device, so that the effective array device 210 can perform operations such as parameter reset or calibration without the incident infrared radiation signal from the external environment, so that the signal collected by the image sensor 1 is more accurate.

[0167] For another example, when the barrier structure pattern 11 includes a first reflective layer 11b and a second reflective layer 11c, the material of the first reflective layer 11b is the same as that of the second reflective layer 11c. The materials of the first reflective layer 11b and the second reflective layer 11c can both be conductive materials.

[0168] For another example, when the barrier structure pattern 11 includes a first reflective layer 11b and a second reflective layer 11c, the reflectivity of the second reflective layer 11c is lower than that of the first reflective layer 11b. Moreover, the material of the first reflective layer 11b is the same as that of the second reflective layer 11c.

[0169] In some examples, such as Fig. 22 As shown, the actuating beam 130 includes a conductive layer 130 a . The first reflective layer 11 b of the barrier structure pattern 11 is electrically connected to the conductive layer 130 a in the corresponding actuating beam 130 .

[0170] Thus, when current is provided to the first anchor point pair 140A and the second anchor point pair 140B, the current can flow from the anchor points along the actuating structure pattern 13 through the baffle 111, thereby generating an Ampere force on the baffle 111, thereby driving the baffle 111 and the actuating structure pattern 13 to move.

[0171] In some examples, a material of either the first reflective layer 11b and the conductive layer 130a includes a metal material.

[0172] For example, the first reflective layer 11b and the conductive layer 130a may both be made of metal materials. The metal material may be gold. The metal material may be used for conducting electricity. The metal material may also reflect infrared radiation signals to prevent the infrared radiation signals from being incident on the effective array devices of the infrared chip through the first reflective layer 11b made of the metal material.

[0173] In some examples, the actuation structure pattern 13 and the corresponding blocking piece 111 are an integral structure.

[0174] The above-mentioned integrated structure means that the actuating structure pattern 13 and the corresponding baffle 111 are continuous and spaced apart. Therefore, the actuating structure pattern 13 and the corresponding baffle 111 can be formed simultaneously by etching the same silicon substrate (or wafer substrate) in one patterning process, thereby simplifying the preparation process of the micro-electromechanical baffle 10.

[0175] Some embodiments of the present invention also provide a method for preparing a micro-electromechanical barrier 10, such as Fig.13a As shown, the manufacturing method includes S100 to S200.

[0176] S100, such as Fig.14 and Fig.17 As shown, a silicon substrate 10 ′ is provided.

[0177] For example, the material of the silicon substrate 10 ′ may be polycrystalline silicon or the like.

[0178] S200, such as Fig.16 and Fig. 22 As shown, the silicon substrate 10 ′ is etched to form a support structure pattern 120 having an opening 121 , two actuation structure patterns 13 connected to the support structure pattern 120 , and a stopper 111 connected to the middle of each actuation structure pattern 13 .

[0179] Understandably, Fig.16 (a) and Fig.16 (b) shows the structure of the same MEMS baffle 10 at different viewing angles. Fig.16 (a) is a schematic diagram of the MEMS shutter 10 from the perspective of the arrangement direction of the actuating structure pattern 13. Fig.16 (b) is a schematic diagram of the MEMS baffle 10 from the perspective of the second center line TL. Fig.15 , Figure 18 to Figure 22 Schematic diagrams of the MEMS baffle 10 under the above two viewing angles are shown.

[0180] For example, the silicon substrate 10 ′ may be etched using an etching technique.

[0181] It is understandable that there are many methods for etching the silicon substrate 10 ′ to form the support structure pattern 120 , the actuation structure pattern 13 and the baffle 111 , which can be selected as needed, and the present application does not limit this.

[0182] In some embodiments, Fig.13b As shown, the silicon substrate 10' is etched, including S210a-S220a.

[0183] S210a, such as Fig.15 As shown, a first photoresist layer 80A' is formed on the first side of the silicon substrate 10', and the first photoresist layer 80A' includes a first pattern 120' corresponding to the support structure pattern 120 to be formed, a second pattern 130' corresponding to the actuating structure pattern 13 to be formed, and a third pattern 110' corresponding to the baffle 111 to be formed.

[0184] S220a, such as Fig.16 As shown, the silicon substrate 10 ′ is etched using the first photoresist layer 80A′ as a mask to form a support structure pattern 120 having an opening 121 , two actuation structure patterns 13 connected to the support structure pattern 120 , and a blocking piece 111 connected to the middle of each actuation structure pattern 13 .

[0185] For example, the etching process may be a dry etching process.

[0186] In the case where the micro-electromechanical barrier 10 includes a conductive layer, the manufacturing method further includes: before forming the first photoresist layer 80A' on the first side of the silicon substrate 10', forming a conductive film on the first side of the silicon substrate 10'. Then, using the first photoresist layer 80A' as a mask, the conductive film and the silicon substrate 10' are simultaneously etched to form a support structure pattern 120 having an opening 121, two actuation structure patterns 13 connected to the support structure pattern 120, and a barrier 111 connected to the middle of each actuation structure pattern 13.

[0187] In other embodiments, Fig.13c As shown, the silicon substrate 10' is etched, including steps S210b-S240b.

[0188] S210b, such as Fig.18 As shown, a second photoresist layer 80B' is formed on the first side of the silicon substrate 10', and the second photoresist 80B' has a first hollow pattern LK1 corresponding to the support structure pattern 120 to be formed, a second hollow pattern LK2 corresponding to the actuating structure pattern 13 to be formed, and a third hollow pattern LK3 corresponding to the baffle 111 to be formed.

[0189] For example, the first hollow pattern LK1, the second hollow pattern LK2 and the third hollow pattern LK3 are openings in the second photoresist layer 80B′, and the material of the second photoresist layer exists in the second photoresist layer 80B′ except the regions of the first hollow pattern LK1, the second hollow pattern LK2 and the third hollow pattern LK3.

[0190] S220b, such as Fig.19 As shown, a conductive film 90' is formed on a side of the second photoresist layer 80B' away from the silicon substrate 10'.

[0191] Exemplarily, the conductive film 90' is formed as a whole layer, and the conductive film 90' material is formed at the positions corresponding to the first hollow pattern LK1, the second hollow pattern LK2 and the third hollow pattern LK3 in the second photoresist layer 80B', and at the positions except the positions corresponding to the first hollow pattern LK1, the second hollow pattern LK2 and the third hollow pattern LK3 in the second photoresist layer 80B'. Moreover, the portion of the conductive film 90' located in the first hollow pattern LK1, the portion located in the second hollow pattern LK2 and the portion located in the third hollow pattern LK3 are all in contact with the silicon substrate 10'.

[0192] For example, the conductive film 90 ′ may be formed as a whole layer using the same conductive material in the same sputtering process.

[0193] For another example, different regions in the conductive film 90 ′ may be formed sequentially using different conductive materials in different sputtering processes.

[0194] Exemplarily, the material of the conductive film 90 ′ may be metal, such as gold.

[0195] For example, the gold material can form a conductive wire to conduct electricity. The gold material also has a reflective function, and can reflect infrared radiation signals incident on the gold to prevent the infrared radiation signals from passing through the gold.

[0196] S230b, such as Fig.21As shown, the second photoresist 80B' is stripped off, and a portion of the conductive film 90' located in the first hollow pattern LK1, a portion located in the second hollow pattern LK2, and a portion located in the third hollow pattern LK3 are retained to obtain a conductive layer.

[0197] For example, the conductive layer may include: a third conductive layer corresponding to the support structure pattern 120 (or the first hollow pattern LK1), a second conductive layer corresponding to the actuating structure pattern 13 (or the second hollow pattern LK2), and a first conductive layer corresponding to the baffle 111 (or the third hollow pattern LK3).

[0198] The first conductive layer, the second conductive layer and the third conductive layer are formed by using the same conductive material in the same preparation process, thereby simplifying the preparation process of the MEMS barrier 10 .

[0199] Of course, when different regions in the conductive film 90' are formed in sequence using different conductive materials in different sputtering processes (for example, the conductive material used in the portion of the conductive film 90' located in the first hollow pattern LK1, the conductive material used in the portion located in the second hollow pattern LK2, and the conductive material used in the portion located in the third hollow pattern LK3 may be different), the materials of the above-mentioned first conductive layer, second conductive layer and third conductive layer are different.

[0200] S240b, such as Fig. 22 As shown, the silicon substrate 10 ′ is etched using the conductive layer as a mask to form a support structure pattern 120 having an opening 121 , two actuation structure patterns 13 connected to the support structure pattern 120 , and a stopper 111 connected to the middle of each actuation structure pattern 13 .

[0201] In some embodiments, before stripping the second photoresist 80B', the manufacturing method further includes S221b.

[0202] S221b, such as Fig. 20 As shown, the second side of the silicon substrate 10 ′ is etched to form a groove 101 . The second side is opposite to the first side, and the area of ​​the groove 101 is larger than the area of ​​the opening 121 .

[0203] For example, the groove 101 can be arranged corresponding to the position of the baffle 111. The existence of the groove 101 can ensure that when the micro-electromechanical baffle 10 and the infrared chip 20 are assembled, there is a certain distance between the baffle 111 and the effective array device 210 in the infrared chip 20, so as to avoid the baffle 111 from damaging the effective array device 210 during the movement process, thereby improving the yield rate of the micro-electromechanical baffle 10.

[0204] The manufacturing method of the MEMS baffle 10 provided in some embodiments of the present invention has the same technical effect as the MEMS baffle 10 provided in the above embodiment, and will not be described in detail here.

[0205] Some embodiments of the present invention also provide another image sensor, such as Figure 5 As shown, the image sensor 1 includes: a micro-electromechanical barrier assembly 2 and an infrared chip 20 located at one side of the micro-electromechanical barrier assembly 2 . The infrared chip 20 is located at a side close to the micro-electromechanical barrier 10 in the micro-electromechanical barrier assembly 2 .

[0206] For example, regarding the structural features of the infrared chip 20 , reference may be made to the descriptions in some of the above embodiments of the present invention, which will not be described in detail here.

[0207] Exemplarily, the MEMS baffle assembly 2 is an integrated structure consisting of the MEMS baffle 10 and the cover plate 30 .

[0208] By adopting the above-mentioned arrangement, the distance between the cover plate 30 and the micro-electromechanical baffle 10 can be made smaller, thereby making the size and thickness of the micro-electromechanical baffle assembly 2 smaller, thereby reducing the overall size of the micro-electromechanical baffle assembly 2, so that when the micro-electromechanical baffle assembly is applied to the image sensor, the fit is more compact, and the size of the image sensor is reduced.

[0209] Some embodiments of the present invention further provide a micro-electromechanical barrier assembly 2, such as Fig.23 As shown, the MEMS baffle assembly 2 includes: a MEMS baffle 10; and a cover plate 30 located on one side of the MEMS baffle 10; the cover plate 30 has a light-transmitting area TA, the light-transmitting area TA is arranged corresponding to the opening 121 of the support structure pattern 120, and the area of ​​the light-transmitting area TA is greater than or equal to the area of ​​the opening 121 of the MEMS baffle 10; the material of the cover plate 30 includes silicon.

[0210] Exemplarily, the MEMS baffle 10 and the cover plate 30 in the MEMS baffle assembly 2 are an integrated structure.

[0211] For example, the structural features of the MEMS baffle 10 in the MEMS baffle assembly 2 can be referred to the descriptions in some of the above embodiments of the present invention, and will not be described in detail here.

[0212] Some embodiments of the present invention also provide a method for preparing a micro-electromechanical barrier assembly 2, such as Fig.24a As shown, the preparation method includes S501 to S502.

[0213] S501, such as Figure 24b As shown, a cover plate 30 is provided.

[0214] For example, the material of the cover plate 30 may be silicon.

[0215] Exemplarily, the cover plate 30 has a light-transmitting area TA. The light-transmitting area TA allows infrared radiation signals to pass through.

[0216] S502, such as Fig.24c As shown, a baffle film is grown on the cover plate 30 and etched to form a MEMS baffle 10 having a MEMS structure pattern; the MEMS structure pattern includes a support structure pattern 120 having an opening 121, a baffle structure pattern 110 that partially blocks the opening 121, and an actuating structure pattern 13 connecting the support structure pattern 120 and the baffle structure pattern 110.

[0217] Exemplarily, the cover plate 30 and the micro-electromechanical barrier 10 are grown on the same chip.

[0218] Exemplarily, the cover plate 30 is close to a side of the first reflective layer 11 b of the MEMS barrier 10 .

[0219] By adopting the above-mentioned preparation method, the cover plate 30 and the micro-electromechanical barrier 10 are grown on the same chip, so that the distance between the cover plate 30 and the micro-electromechanical barrier 10 can be reduced, thereby making the size and thickness of the micro-electromechanical barrier assembly 2 smaller, thereby reducing the overall size of the micro-electromechanical barrier assembly 2, so that when the micro-electromechanical barrier assembly is applied to the image sensor, the fit is more compact, and the size of the image sensor is reduced.

[0220] Some embodiments of the present invention also provide a method for preparing an image sensor 1, such as Fig.25a As shown, the preparation method includes S503 to S504.

[0221] S503, such as Fig.25b As shown, the micro-electromechanical barrier assembly 2 described in the above embodiment is provided.

[0222] For example, regarding the structural features of the micro-electromechanical barrier assembly 2 , reference may be made to the descriptions in some of the above embodiments of this document, which will not be described in detail here.

[0223] S504, such as Fig.25c As shown, an infrared chip 20 is provided; a micro-electromechanical barrier assembly 2 is bonded to the infrared chip 20 to form an image sensor 1; wherein the infrared chip 20 is close to one side of the micro-electromechanical barrier 10 in the micro-electromechanical barrier assembly 2.

[0224] Exemplarily, the image sensor 1 includes an infrared chip 20 , a micro-electromechanical barrier 10 , and a cover plate 30 which are stacked in sequence.

[0225] For example, regarding the structural features of the infrared chip 20 , reference may be made to the descriptions in some of the above embodiments of this document, which will not be described in detail here.

[0226] By adopting the above-mentioned preparation method, the micro-electromechanical barrier assembly 2 and the infrared chip 20 are bonded to form an image sensor, so that the cover plate 30, the infrared chip 20, and the micro-electromechanical barrier 10 can be more compactly matched, especially the cover plate 30 and the micro-electromechanical barrier 10 can be more compactly matched, thereby reducing the overall size of the image sensor 1 and also improving the manufacturing efficiency of the image sensor 1.

[0227] Some embodiments of the present invention further provide a method for preparing an image sensor 1, such as Fig.26a As shown, the preparation method includes S511 to S513.

[0228] S511, such as Figure 26b As shown, a micro-electromechanical barrier sheet 10 as described in the above embodiment is provided.

[0229] For example, regarding the structural features of the micro-electromechanical barrier 10 , reference may be made to the descriptions in some of the above embodiments of this document, which will not be described in detail here.

[0230] S512, such as Fig.26c As shown, an infrared chip 20 is provided; the micro-electromechanical barrier 10 is bonded to the infrared chip 20 to form an image sensor body 3 .

[0231] For example, regarding the structural features of the infrared chip 20 , reference may be made to the descriptions in some of the above embodiments of this document, which will not be described in detail here.

[0232] Exemplarily, the effective array device 210 of the infrared chip 20 is bonded to a surface of the micro-electromechanical barrier 10 close to the second reflective layer 11 c.

[0233] S513, such as Fig.26d As shown, a cover plate 30 is provided; the image sensor body 3 is bonded to the cover plate 30 , and the cover plate 30 is located on a side close to the micro-electromechanical barrier 10 in the image sensor body 3 , so as to form the image sensor 1 .

[0234] For example, regarding the structural features of the cover plate 30 , reference may be made to the descriptions in some of the above embodiments of this document, which will not be repeated here.

[0235] By adopting the above-mentioned preparation method, the micro-electromechanical barrier 10, the infrared chip 20, and the cover plate 30 are bonded in sequence to form an image sensor, which can make the cover plate 30, the infrared chip 20, and the micro-electromechanical barrier 10 more compact, thereby reducing the overall size of the image sensor 1 and improving the manufacturing efficiency of the image sensor 1.

[0236] Some embodiments of the present invention further provide a method for preparing an image sensor 1, such as Fig.27a As shown, the preparation method includes S521 to S523.

[0237] S521, such as Figure 27b As shown, an infrared chip 20 is provided.

[0238] For example, regarding the structural features of the infrared chip 20 , reference may be made to the descriptions in some of the above embodiments of this document, which will not be described in detail here.

[0239] S522, such as Fig.27c As shown, a cover plate 30 is provided; the infrared chip 20 is bonded to the cover plate 30 to form an infrared chip assembly 4.

[0240] For example, regarding the structural features of the cover plate 30 , reference may be made to the descriptions in some of the above embodiments of this document, which will not be described in detail here.

[0241] S523, such as Fig.27d As shown, a micro-electromechanical barrier 10 as described in any of the above embodiments is provided; the infrared chip assembly 4 is bonded to the micro-electromechanical barrier 10 to form an image sensor 1. The micro-electromechanical barrier 10 is close to the side where the cover plate 30 of the infrared chip assembly 4 is located.

[0242] Exemplarily, the cover plate 30 is close to one side of the second reflective layer in the MEMS barrier 10 .

[0243] By adopting the above-mentioned preparation method, the infrared chip 20, the cover plate 30 and the micro-electromechanical barrier 10 are bonded in sequence to form the image sensor 1, which can make the cover plate 30, the infrared chip 20 and the micro-electromechanical barrier 10 more compact, thereby reducing the overall size of the image sensor 1 and improving the manufacturing efficiency of the image sensor 1.

[0244] Some embodiments of the present invention further provide a method for preparing an image sensor 1, such as Fig.28a As shown, the preparation method includes S531 to S533.

[0245] S531, such as Fig.28b As shown, an infrared chip 20 is provided.

[0246] For example, regarding the structural features of the infrared chip 20 , reference may be made to the descriptions in some of the above embodiments of this document, which will not be described in detail here.

[0247] S532, such as Fig.28c As shown, a baffle film is grown on the infrared chip 20, and the baffle film is etched to form a micro-electromechanical baffle 10 having a micro-electromechanical structure pattern; the micro-electromechanical structure pattern includes a support structure pattern 120 having an opening 121, a baffle structure pattern 110 that blocks part of the opening 121, and an actuating structure pattern 13 connecting the support structure pattern 120 and the baffle structure pattern 110; the infrared chip 20 and the micro-electromechanical baffle 10 constitute an image sensor body 5.

[0248] It is understandable that there are many methods for etching the barrier film to form the MEMS barrier 10 having the MEMS structure pattern, which can be selected according to needs, and the present invention does not limit this.

[0249] For example, the method for etching the barrier film may refer to the method for etching the silicon substrate in the method for preparing the micro-electromechanical barrier 10 described above.

[0250] Exemplarily, in the image sensor body 5 , the infrared chip 20 is close to one side of the second reflective layer 11 c of the micro-electromechanical barrier 10 .

[0251] S533, such as Fig.28d As shown, a cover plate 30 is provided; the image sensor body 5 is bonded to the cover plate 30 to form the image sensor 1 ; wherein the cover plate 30 is close to one side of the micro-electromechanical barrier 10 in the image sensor body 5 .

[0252] For example, regarding the structural features of the cover plate 30 , reference may be made to the descriptions in some of the above embodiments of this document, which will not be described in detail here.

[0253] By adopting the above-mentioned preparation method, the infrared chip and the micro-electromechanical barrier are grown on the same chip, and then bonded with the cover plate to form the image sensor 1. This can make the cover plate 30, the infrared chip 20, and the micro-electromechanical barrier 10 more compact, especially the infrared chip 20 and the micro-electromechanical barrier 10 more compact, thereby reducing the overall size of the image sensor 1 and improving the manufacturing efficiency of the image sensor 1.

[0254] It should be noted that the MEMS baffle 10 provided in some embodiments of the present application may also be used in other imaging devices, which will not be described in detail here.

[0255] The MEMS baffle in the embodiment of the present application is made of a silicon substrate, such as polysilicon. In fact, other materials may also be used, such as sapphire (aluminum oxide), silicon oxide, silicon nitride, aluminum nitride, gallium arsenide, etc.

[0256] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0257] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be thought of by any person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A micro-electromechanical barrier, characterized in that: The micro-electro-mechanical barrier comprises a micro-electro-mechanical structure pattern; The micro-electromechanical structure pattern includes a support structure pattern having an opening, a baffle structure pattern covering part of the opening, and an actuating structure pattern connecting the support structure pattern and the baffle structure pattern; The baffle structure pattern includes two baffles; The micro-electromechanical barrier has a first working mode and a second working mode; When the micro-electromechanical barrier is in the first working mode, the actuating structure pattern drives the two barrier pieces to move relative to each other so that there is a gap between the two barrier pieces; when the micro-electromechanical barrier is in the second working mode, the actuating structure pattern drives the two barrier pieces to move relative to each other so that there is no gap between the two barrier pieces; The actuation structure pattern comprises two actuation beams, the actuation beams extend along a first direction, and the two actuation beams are respectively a first actuation beam and a second actuation beam; When the micro-electromechanical shutter is in the first working mode, the first actuating beam is in a convex steady state along the second direction, the second actuating beam is in a concave steady state along the second direction, and there is a gap between the two shutters; When the micro-electromechanical baffle is in the second working mode, the first actuating beam is in a steady state concave along a second direction, the second actuating beam is in a steady state convex along the second direction, and there is no gap between the two baffles; the first direction and the second direction are both parallel to the plane where the baffles are located, and the two intersect.

2. The micro-electromechanical barrier according to claim 1, characterized in that: The configuration of the actuation beam includes a cosine curve.

3. The micro-electromechanical barrier according to claim 1, characterized in that: The micro-electromechanical barrier further comprises: a first anchor point pair and a second anchor point pair disposed on the support structure pattern; The first anchor point pair is connected to two ends of the first actuation beam, and the second anchor point pair is connected to two ends of the second actuation beam; The first anchor point pair and the second anchor point pair are respectively used to receive electrical signals to form currents in corresponding actuating beams; the direction of the current in the first actuating beam is opposite to the direction of the current in the second actuating beam.

4. The micro-electromechanical barrier according to claim 1, characterized in that: The supporting structure pattern is a frame with a hollowed-out middle portion; The support structure pattern has a first centerline extending along the first direction; The two actuating beams are respectively located on both sides of the first center line and are symmetrical with respect to the first center line.

5. The micro-electromechanical barrier according to claim 1, characterized in that: The support structure pattern is a frame with a hollowed-out middle portion; The support structure pattern has a second centerline extending along the second direction; Each of the actuating beams is symmetrical about the second center line.

6. The micro-electromechanical barrier according to claim 1, characterized in that: The baffle structure pattern includes a base layer, a first reflective layer located on a first side of the base layer, and / or a second reflective layer located on a second side of the base layer.

7. The micro-electromechanical barrier according to claim 6, characterized in that: In the case where the baffle structure pattern includes a first reflective layer and a second reflective layer, the reflectivity of the second reflective layer is less than the reflectivity of the first reflective layer; and / or the material of the first reflective layer is the same as that of the second reflective layer.

8. The micro-electromechanical barrier according to claim 6, characterized in that: The actuation beam includes a conductive layer; The first reflective layer in the baffle structure pattern is electrically connected to the conductive layer in the corresponding actuating beam.

9. The micro-electromechanical barrier according to claim 8, characterized in that: A material of any one of the first reflective layer and the conductive layer includes a metal material.

10. A method for preparing a micro-electromechanical barrier, characterized in that: The preparation method comprises: providing a silicon substrate; The silicon substrate is etched to form a support structure pattern with an opening, two actuating beams connected to the support structure pattern, and a baffle structure pattern connected to the middle of each of the actuating beams; the actuating beams extend along a first direction; the two actuating beams are respectively a first actuating beam and a second actuating beam; when the micro-electromechanical baffle is in a first working mode, the first actuating beam is in a convex steady state along a second direction, the second actuating beam is in a concave steady state along the second direction, and there is a gap between the two baffles; when the micro-electromechanical baffle is in a second working mode, the first actuating beam is in a concave steady state along the second direction, the second actuating beam is in a convex steady state along the second direction, and there is no gap between the two baffles; the first direction and the second direction are both parallel to the plane where the baffle is located, and the two intersect.

11. The preparation method according to claim 10, characterized in that: The etching of the silicon substrate comprises: forming a first photoresist layer on a first side of the silicon substrate, wherein the first photoresist layer includes a first pattern corresponding to a support structure pattern to be formed, a second pattern corresponding to an actuating beam to be formed, and a third pattern corresponding to a baffle to be formed; The silicon substrate is etched using the first photoresist layer as a mask to form a support structure pattern with an opening, two actuating beams connected to the support structure pattern, and a blocking piece connected to the middle of each actuating beam.

12. The preparation method according to claim 10, characterized in that: The etching of the silicon substrate comprises: forming a second photoresist layer on the first side of the silicon substrate, wherein the second photoresist layer has a first hollow pattern corresponding to a support structure pattern to be formed, a second hollow pattern corresponding to an actuating beam to be formed, and a third hollow pattern corresponding to a baffle to be formed; forming a conductive film on a side of the second photoresist layer away from the silicon substrate; The second photoresist layer is peeled off, and a portion of the conductive film located in the first hollow pattern, a portion located in the second hollow pattern, and a portion located in the third hollow pattern are retained to obtain a conductive layer; The silicon substrate is etched using the conductive layer as a mask to form a support structure pattern with an opening, two actuating beams connected to the support structure pattern, and a blocking piece connected to the middle of each actuating beam.

13. The preparation method according to claim 12, characterized in that: Before stripping the second photoresist, the preparation method further includes: The second side of the silicon substrate is etched to form a groove; the second side is opposite to the first side, and the area of ​​the groove is larger than the area of ​​the opening.

14. A micro-electromechanical barrier assembly, characterized in that: The micro-electromechanical barrier assembly comprises: The micro-electromechanical barrier according to any one of claims 1 to 9; And, a cover plate located on one side of the micro-electromechanical barrier; the cover plate has a light-transmitting area, the light-transmitting area is arranged corresponding to the opening of the support structure pattern, and the area of ​​the light-transmitting area is greater than or equal to the area of ​​the opening of the micro-electromechanical barrier; the material of the cover plate includes silicon.

15. A method for preparing a micro-electromechanical barrier assembly, characterized in that: The preparation method comprises: Provide cover plate; A baffle film is grown on the cover plate, and the baffle film is etched to form a micro-electromechanical baffle having a micro-electromechanical structure pattern; the micro-electromechanical structure pattern includes a support structure pattern with an opening, a baffle structure pattern covering part of the opening, and an actuating structure pattern connecting the support structure pattern and the baffle structure pattern; the actuating structure pattern includes two actuating beams, the actuating beams extend along a first direction, and the two actuating beams are respectively a first actuating beam and a second actuating beam; when the micro-electromechanical baffle is in a first working mode, the first actuating beam is in a convex steady state along a second direction, the second actuating beam is in a concave steady state along the second direction, and there is a gap between the two baffles; when the micro-electromechanical baffle is in a second working mode, the first actuating beam is in a concave steady state along the second direction, the second actuating beam is in a convex steady state along the second direction, and there is no gap between the two baffles; the first direction and the second direction are both parallel to the plane where the baffle is located, and the two intersect.

16. An image sensor, characterized in that: The image sensor comprises: The micro-electromechanical barrier according to any one of claims 1 to 9, and An infrared chip is arranged on one side of the micro-electromechanical baffle; the infrared chip includes: an effective array device for sensing infrared radiation signals; when there is no gap between two baffles in the micro-electromechanical baffle, the effective array device is arranged opposite to the two baffles; when there is a gap between two baffles in the micro-electromechanical baffle, the gap between the two baffles corresponds to the effective array device.

17. The image sensor according to claim 16, characterized in that: The micro-electromechanical barrier is parallel to the infrared chip; The area of ​​the baffle is greater than half of the area of ​​the region occupied by the effective array device.

18. The image sensor according to claim 16, characterized in that The image sensor further comprises: a cover plate located on a side of the micro-electromechanical barrier away from the infrared chip; The cover plate has a light-transmitting area, the light-transmitting area is arranged corresponding to the effective array device, and the area of ​​the light-transmitting area is greater than or equal to the area of ​​the effective array device; The material of the cover plate includes silicon.

19. The image sensor according to claim 16, characterized in that: The image sensor further includes: a cover plate located between the micro-electromechanical barrier and the infrared chip; The cover plate has a light-transmitting area, the light-transmitting area is arranged corresponding to the effective array device, and the area of ​​the light-transmitting area is greater than or equal to the area of ​​the effective array device; The material of the cover plate includes silicon.

20. An image sensor, characterized in that: The image sensor comprises: The micro-electromechanical barrier assembly as claimed in claim 14, and an infrared chip located at one side of the micro-electromechanical barrier assembly, wherein the infrared chip is located at a side of the micro-electromechanical barrier in the micro-electromechanical barrier assembly.

21. A method for preparing an image sensor, characterized in that: The preparation method comprises: Providing a micro-electromechanical barrier as claimed in any one of claims 1 to 9; Providing an infrared chip; bonding the micro-electromechanical barrier to the infrared chip to form an image sensor body; A cover plate is provided; the image sensor body is bonded to the cover plate, wherein the cover plate is located close to a side of the image sensor body where a micro-electromechanical barrier is located, so as to form the image sensor.

22. A method for preparing an image sensor, characterized in that: The preparation method comprises: Provide infrared chip; Providing a cover plate; bonding the infrared chip to the cover plate to form an infrared chip assembly; Provide a micro-electromechanical barrier as described in any one of claims 1 to 9; bond the infrared chip assembly to the micro-electromechanical barrier to form the image sensor; wherein the micro-electromechanical barrier is close to a side where a cover plate in the infrared chip assembly is located.

23. A method for preparing an image sensor, characterized in that: The preparation method comprises: Provide infrared chip; A baffle film is grown on the infrared chip, and the baffle film is etched to form a micro-electromechanical baffle having a micro-electromechanical structure pattern; the micro-electromechanical structure pattern includes a support structure pattern with an opening, a baffle structure pattern that blocks part of the opening, and an actuating structure pattern connecting the support structure pattern and the baffle structure pattern; the infrared chip and the micro-electromechanical baffle constitute an image sensor body; the actuating structure pattern includes two actuating beams, the actuating beams extend along a first direction, and the two actuating beams are respectively a first actuating beam and a second actuating beam; when the micro-electromechanical baffle is in a first working mode, the first actuating beam is in a convex steady state along a second direction, the second actuating beam is in a concave steady state along the second direction, and there is a gap between the two baffles; when the micro-electromechanical baffle is in a second working mode, the first actuating beam is in a concave steady state along the second direction, the second actuating beam is in a convex steady state along the second direction, and there is no gap between the two baffles; the first direction and the second direction are both parallel to the plane where the baffle is located, and the two directions intersect; Providing a cover plate; bonding the image sensor body to the cover plate to form the image sensor; wherein the cover plate is close to one side of the micro-electromechanical barrier in the image sensor body.

24. A method for preparing an image sensor, characterized in that: The preparation method comprises: Providing a micro-electromechanical barrier assembly as claimed in claim 14; An infrared chip is provided; the micro-electromechanical barrier assembly is bonded to the infrared chip to form the image sensor; wherein the infrared chip is close to one side of the micro-electromechanical barrier in the micro-electromechanical barrier assembly.

Images