Method and system for generating pulsed multi-ion species beam from an electron cyclotron resonance ion source

Abstract

The present application relates to a kind of electron cyclotron resonance ion source generation pulse multi-ion species beam method and system, it includes plasma discharge chamber, for generating and restricting plasma;Electron cyclotron resonance ion source magnet is arranged outside ion source cavity;Microwave source is arranged in the injection end of ion source cavity, the microwave power generated is transmitted to plasma discharge chamber, and the gas atom molecule existing in the inside of plasma discharge chamber is ionized, generates the required plasma;Pulsed gas feed-in system is arranged in the injection end of ion source cavity, for single gas or multiple gas is fed into ion source cavity, realizes the accurate feed of the gas required by ion source;Ion source cold electron gun is arranged in the injection end of ion source cavity, for preventing the escape of electron in plasma in axial direction and providing additional cold secondary electron injection, to adjust ion beam extraction flow intensity;Ion source extraction component is arranged in the extraction end of ion source cavity, for extracting ion beam flow.The present application can be applied in the field of ion accelerator.

Description

Technical Field

[0001] This invention relates to the field of ion accelerator technology, and in particular to a method and system for generating pulsed multi-ion beams using an electron cyclotron resonance ion source. Background Technology

[0002] Traditional ion accelerators use electron cyclotron resonance ion sources to provide the required ion beam. This is achieved by feeding a precisely controlled flow rate of gaseous elements or compounds (or even solid elements or compounds) containing the target ion species into the ion source discharge chamber, while simultaneously feeding microwave power for electron cyclotron resonance heating into the plasma discharge chamber. The ion beam generated and extracted by the ion source is determined by the elemental composition of the feed, which includes a small amount of background element ions. Under conventional conditions, ion sources can generate and extract continuous mixed ion beams. Later, researchers discovered that feeding microwave power into the ion source discharge chamber in pulses resulted in an explosive increase in the extracted beam at the corresponding time of the microwave fall-edge, known as the afterglow effect. This effect can achieve ion beam intensities unattainable in DC mode, but it still does not solve the problems of high feed gas consumption and the inability to quickly switch ion beam types.

[0003] In the field of ion beam radiotherapy, the characteristic Bragg peaks of protons and heavy ions allow ion beams to release most of their energy at the desired depth within the body, precisely killing tumor tissue without causing significant damage to other tissues along the beam path. This has made it the most advanced tumor treatment method in recent years. Furthermore, because different ions correspond to different characteristic Bragg peaks, current ion beam radiotherapy typically employs methods such as proton radiotherapy, heavy ion radiotherapy, and multi-ion radiotherapy. Multi-ion radiotherapy represents the most advanced approach, and internationally, multiple ion sources are typically used as ion injection sources at the accelerator front end. While one ion source is operating, the others are in a standby state. When a beam switching is required, one of the standby ion sources is selected to operate in conjunction with the accelerator. This invention relates to a pulsed ion beam system that can be applied to the ion source at the accelerator front end. A single ion source generates beams of different ion types at pulse intervals to coordinate with the downstream accelerator for tumor treatment. Furthermore, in carbon ion beam radiotherapy accelerators, some ions from the carbon plasma escape to the inner wall of the ion source cavity, causing contamination of the inner wall and even the inner walls of insulating components. This necessitates shutting down and cleaning the ion source cavity after a period of operation, significantly reducing the efficiency of the radiotherapy accelerator. The pulsed ion beam technology of this invention can provide a carbon ion beam in one pulse and an oxygen ion beam in the next, utilizing the cleaning effect of oxygen plasma to clean the inside of the ion source cavity, thereby extending the maintenance life of the ion source and improving the efficiency of the radiotherapy accelerator.

[0004] In the area of ​​material irradiation, traditional accelerators typically provide a single type of ion to accelerate to the irradiation terminal for material irradiation. To achieve irradiation of materials by different ions, multiple ion sources need to be switched. Due to the beam switching time, the preparation of ion sources and beamlines usually takes several hours or even longer. Irradiation experiments under such circumstances cannot achieve the effect of realistically simulating the synergistic irradiation of different ion beams. Summary of the Invention

[0005] To address the aforementioned problems, the present invention aims to provide a method and system for generating pulsed multi-ion beams using an electron cyclotron resonance ion source. This system can complete ion type switching within a timeframe of hundreds of milliseconds to several minutes, thus significantly shortening the beam switching time and providing a better radiation regimen for ion radiotherapy. Furthermore, since different ion types can change periodically with the pulse waveform, it can more accurately reflect the experimental effects of multi-ion irradiation materials, which is beneficial to the development of materials irradiation science.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: a system for generating pulsed multi-ion beams using an electron cyclotron resonance ion source, comprising: a plasma discharge chamber disposed within the ion source cavity for generating the desired plasma; an electron cyclotron resonance ion source magnet disposed outside the ion source cavity for providing a plasma confinement magnetic field; a microwave source disposed at the injection end of the ion source cavity for transmitting the generated microwave power to the plasma discharge chamber, ionizing the gas atoms and molecules present inside the plasma discharge chamber to generate the desired plasma; a pulsed gas feed system disposed at the injection end of the ion source cavity for feeding a single gas or multiple gases into the ion source cavity to achieve precise feeding of the required gas into the ion source; an ion source cold electron gun disposed at the injection end of the ion source cavity for preventing the escape of axial electrons in the plasma and providing additional cold secondary electrons injected into the ion source cavity to adjust the ion beam extraction current intensity; and an ion source extraction component disposed at the extraction end of the ion source cavity for extracting the ion beam.

[0007] Furthermore, it also includes vacuum acquisition equipment to provide the vacuum conditions required for plasma generation and efficient extraction.

[0008] Furthermore, the ion source extraction component includes a high-voltage electric field and an insulating ceramic; the high-voltage electric field is disposed at both ends of the extraction electrode of the ion source cavity to provide a high-voltage electric field for extraction and to load it to the required potential; the insulating ceramic is disposed at the extraction end of the ion source cavity.

[0009] Furthermore, the pulsed gas feed system includes a gas source, gas pipeline, mechanical pump, fast pulse valve, and timing control system;

[0010] The gas source can be a single gas source or a source of multiple different types of gases.

[0011] The mechanical pump is connected to the plasma discharge chamber via a pipeline, and the mechanical pump evacuates the gas transport pipeline. The output end of the gas source is connected to one end of the gas pipeline via the fast pulse valve, and the other end of the gas pipeline is connected to the pipeline between the mechanical pump and the plasma discharge chamber. On this pipeline, another fast pulse valve is respectively installed on both sides of the connection point with the gas pipeline. Each fast pulse valve is connected to the timing control system, and its operation is controlled by the timing control system.

[0012] Furthermore, the number of rapid pulse valves is set according to the type of gas.

[0013] Furthermore, the microwave source connects the microwave power source to the timing control system, providing a square wave signal with the required frequency and duty cycle as needed; under the modulation of the square wave signal, the microwave power is output to the plasma discharge chamber of the ion source according to the required waveform.

[0014] A method for generating pulsed multi-ion beams using an electron cyclotron resonance ion source, based on the aforementioned system, includes: acquiring a vacuum environment within the ion source cavity using a vacuum acquisition device; feeding microwave power from a microwave source into a baking plasma discharge chamber for microwave training; once the vacuum reaches a set level, feeding microwave power into the plasma discharge chamber for baking training; after microwave training, stopping microwave feeding and starting high-voltage electric field training to extract the ion beam; after high-voltage electric field training, feeding gas, ensuring the mechanical pump is in a constantly running state, and promptly evacuating the gas pipeline vacuum; using a pulsed gas feeding system with different switching sequences to control single-phase gas feeding, multi-gas mixed feeding, and rapid gas switching feeding; and using a timing control system to set the microwave power of the microwave source to feed into the plasma discharge chamber with the same pulse period and duty cycle as the gas pulse system, achieving rapid ionization of the fed gas and extracting the ion beam.

[0015] Furthermore, the microwave training includes:

[0016] During the initial microwave loading, a change in vacuum level of orders of magnitude was observed in the vacuum detection equipment related to the ion source. Microwave loading continued until the vacuum returned to the previous state without change, until the microwave power was loaded to the normal operating power or above.

[0017] Furthermore, the high-voltage electric field training includes:

[0018] Control the high voltage power supply to gradually increase the voltage output, observe whether there is any vacuum deterioration in the vacuum detector, and at the same time observe whether there is any arcing in the high voltage power supply. After the reading of the vacuum detector stabilizes and the high voltage power supply stops arcing, continue to apply the high voltage until the output high voltage is applied to the operating high voltage value or above.

[0019] Furthermore, it also includes a cold electron feeding step; by cold electron feeding, the extraction current intensity of the ion beam is adjusted.

[0020] The present invention has the following advantages due to the adoption of the above technical solutions:

[0021] 1. This invention can generate and extract a high-current, high-charge state ion beam that is several times stronger than the DC mode beam intensity using an electron cyclotron resonance ion source system, thus solving the injection requirements of high-current ion beams in large accelerator devices such as ion radiotherapy.

[0022] 2. The ion source of the present invention can switch the type of feed gas according to the time pulse to realize the pulse rapid switching of different ions extracted by the ion source; for example, this technology can be used to realize multi-ion interval switching radiation therapy in tumor treatment accelerators; when applied to material irradiation, it can realize multi-ion switching irradiation.

[0023] 3. The ion source of the present invention operates with both gas and microwave power at a certain pulse period and duty cycle, which greatly increases the service life of the ion source and significantly extends the maintenance cycle of the ion source system. It can be applied to fields such as large-scale accelerator medical devices such as ion radiotherapy.

[0024] 4. This invention utilizes ion switching technology, which can use the cleaning effect of oxygen plasma to perform oxygen plasma cleaning of the plasma discharge chamber in one pulse, thereby providing better cavity conditions for the next pulse to provide other required ion beams and increasing the maintenance life of the ion source.

[0025] 5. The ion source of the present invention can operate in pulse mode, DC mode and pulse-DC hybrid mode. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the ion source structure in one embodiment of the present invention;

[0027] Figure 2 This is a schematic diagram of a gas pulse system structure in one embodiment of the present invention;

[0028] Figure 3 This is a schematic diagram of a multi-ion pulse beam in one embodiment of the present invention. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention are within the scope of protection of the present invention.

[0030] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0031] To meet the urgent need for high-current pulsed ion beams in ion accelerators and to address the problem of short operating cycles of ion sources in DC-powered beam mode, which is detrimental to the long-term, efficient, and reliable operation of accelerators, this invention provides a method and system for generating pulsed multi-ion beams using an electron cyclotron resonance ion source. The system includes a pulsed gas feed system, an electron cyclotron resonance ion source magnet, an ion source injection component, an ion source extraction component, an extraction high-voltage power supply, an ion source cold electron gun, and a microwave source. This invention targets key areas such as multi-ion beam radiotherapy and multi-ion material irradiation, thereby achieving efficient generation of high-current ion beams and, based on this, leading to new ion accelerator designs and operating modes, realizing broader application prospects.

[0032] In one embodiment of the present invention, a system for generating pulsed multi-ion beams using an electron cyclotron resonance ion source is provided. In this embodiment, as... Figure 1 As shown, the system includes:

[0033] Plasma discharge chamber 5 is located inside the ion source cavity and is used to generate the required plasma;

[0034] Electron cyclotron resonance ion source magnet 1 (hereinafter referred to as ion source magnet 1) is disposed outside the ion source cavity and is used to provide a plasma confinement magnetic field;

[0035] Microwave source 2, located at the injection end of ion source cavity, is used to transmit the generated microwave power to plasma discharge chamber 5, ionizing the gas atoms and molecules present inside plasma discharge chamber 5 to generate the required plasma.

[0036] The pulsed gas feeding system 3 is installed at the injection end of the ion source cavity and is used to feed a single gas or multiple gases into the ion source cavity to achieve precise feeding of the gas required by the ion source.

[0037] The ion source cold electron gun 4 is set at the injection end of the ion source cavity to prevent the escape of axial electrons in the plasma and to provide additional cold secondary electrons to be injected into the ion source cavity in order to adjust the ion beam extraction current intensity.

[0038] An ion source extraction component is located at the extraction end of the ion source cavity and is used to extract the ion beam 9.

[0039] The above embodiments also include a vacuum acquisition device 6, used to provide the vacuum conditions required for plasma generation and efficient extraction.

[0040] In the above embodiments, the ion source extraction component includes a high-voltage electric field 7 and an insulating ceramic 8. The high-voltage electric field 7 is disposed at both ends of the extraction electrode of the ion source cavity to provide a high-voltage electric field for extraction and to load it to the required potential; and the extraction end of the ion source cavity is provided with an insulating ceramic 8 to prevent continuous discharge breakdown.

[0041] In this embodiment, under the action of the high-voltage electric field 7, the gas fed in by pulses is heated and ionized by the microwave source 2 to generate plasma, and a high-current ion beam 9 is extracted in an afterglow pulsed form. The type of extracted ion beam is limited by the maximum number of gas sources that the gas feeding system can provide.

[0042] In the above embodiments, such as Figure 2 As shown, the pulsed gas feed system 3 includes a gas source, a gas pipeline 316, a mechanical pump 311, rapid pulse valves, and a timing control system 309. The gas source can be a single-gas source or a source of multiple different types of gases; correspondingly, the number of rapid pulse valves is set according to the types of gases, and is set to twice the number of gas types.

[0043] Mechanical pump 311 is connected to plasma discharge chamber 5 via pipeline, and vacuum is drawn from the gas transport pipeline by mechanical pump 311. The output end of the gas source is connected to one end of gas pipeline 316 via a fast pulse valve. The other end of gas pipeline 316 is connected to the pipeline between mechanical pump 311 and plasma discharge chamber 5. On this pipeline, another fast pulse valve is installed on both sides of the connection point with gas pipeline 316. Each fast pulse valve is connected to timing control system 309, and its operation is controlled by timing control system 309.

[0044] In this embodiment, four gases are used as examples for illustration. The pulsed gas feed system 3 is equipped with gas sources (312, 313, 314, and 315) and rapid pulse valves (301, 302, 303, 304, 305, 306, 307, and 308). Gas 1 from gas source 312 is connected to one end of gas pipeline 316 via rapid pulse valve 301; gas 2 from gas source 313 is connected to one end of gas pipeline 316 via rapid pulse valve 302; gas 3 from gas source 314 is connected to one end of gas pipeline 316 via rapid pulse valve 303; and gas 4 from gas source 315 is connected to one end of gas pipeline 316 via rapid pulse valve 304. Rapid pulse valves 305, 306, 307, and 308 are respectively installed on both sides of the connection point with gas pipeline 316.

[0045] The pulsed gas feed system 3 includes at least two gas paths, each connected to at least two gas sources. Depending on requirements, single-gas feed, multi-gas feed, and rapid switching between different types of gases can be achieved by controlling the fast pulse valve. The timing control system 309 controls the opening and closing time and interval of the fast pulse valve, thereby achieving precise control of the gas feed required by the ion source.

[0046] In the above embodiments, the ion source is located in a vacuum environment, and the vacuum level required for its operation is typically around 10. -5 mbar-10 - 9 The mbar level.

[0047] In the above embodiments, the ion source cold electron gun 4 is provided with an electric field by a negative bias power supply and is kept in normal condition.

[0048] In the above embodiment, the microwave source 2 connects the microwave power source to the timing control system 309 and provides a square wave signal with the required frequency and duty cycle as needed; the microwave power to be output is set in the microwave power source, and under the modulation of the square wave signal, the microwave power can be output to the ion source plasma discharge chamber 5 according to the required waveform.

[0049] In the above embodiments, the pulse time period and duty cycle are set by the timing control system 309, and the power of the pulsed gas feed system 3 and the microwave source 2 are operated according to the set pulse parameters.

[0050] When this invention is used, the ion source operates at a low duty cycle, which greatly saves the ion source power maintenance time and extends the overall service life of the ion source; through pulse modulation of the gas path, the ion source can operate at a low gas load for a long time, reducing the pressure on the vacuum acquisition equipment; through pulse modulation of different gas paths, different gases can be fed under different pulses, thereby realizing multi-ion beam time-sharing supply of different ion beams under different pulses.

[0051] In one embodiment of the present invention, a method for generating pulsed multi-ion beams using an electron cyclotron resonance ion source is provided. This method is based on the system implementation described in the above embodiments. In this embodiment, the method includes the following steps:

[0052] 1) The vacuum environment inside the ion source cavity is obtained through the vacuum acquisition device 6, so that the plasma discharge chamber 5 of the electron cyclotron resonance ion source and its connected cavity pipes operate in a vacuum state. It is usually required that the vacuum degree before the ion beam is 10. -5 -10 -9 mbar level.

[0053] 2) Microwave training. The power of microwave source 2 is fed into the baking plasma discharge chamber 5. Once the vacuum reaches a set level, microwave power can be fed in to perform baking training in the plasma discharge chamber 5. In this embodiment, the set level is preferably 10. - 7 mbar.

[0054] Typically, the microwave power is gradually increased over time during the baking process. During the initial microwave loading, a change in vacuum level, measured on the order of magnitude, can be observed in the vacuum detection equipment related to the ion source. Once the vacuum returns to its previous state without change, microwave loading continues. This process is repeated until the microwave power reaches or exceeds the normal operating power.

[0055] 3) High-voltage training. After microwave training is completed, stop microwave feeding and begin training with the ion beam extraction high-voltage electric field 7. Control the high-voltage power supply to gradually increase the extraction voltage, observe whether there is any vacuum deterioration in the vacuum detector, and at the same time observe whether there is any arcing in the high-voltage power supply. After the reading of the vacuum detector stabilizes and there is no continuous arcing in the high-voltage power supply, continue to apply the high voltage. Repeat this step until the extraction high voltage is applied to the operating high voltage value or above.

[0056] 4) After the high-voltage electric field training is completed, gas is fed in. Ensure that the mechanical pump 311 is in a normally open state to timely extract the vacuum in the gas pipeline. Then, the pulse gas feeding system 3 is used to control the single-phase gas feeding, multi-gas mixed feeding, and rapid gas switching feeding by using different switching sequences.

[0057] In this embodiment, as Figure 2 , Figure 3 As shown, the one-way gas feed method is as follows:

[0058] By opening the fast pulse valve 301 to the normally open state through the timing control system 309, and keeping the fast pulse valves 302, 303, 304, 306 and 307 in the normally closed state and the fast pulse valve 305 in the normally open state, the pulse control valve 308 can realize the pulse feeding of gas source 312 gas 1; similarly, the single gas feeding of gas source 313 gas 2, gas source 314 gas 3 and gas source 315 gas 4 can be realized.

[0059] The gas mixing and feeding method is as follows: Taking the mixed feeding of gas source 312 gas 1 and gas source 314 gas 3 as an example, by closing the fast pulse valves 302, 304, 305 and 306 and opening the fast pulse valves 301 and 303 through the timing control system 309, the fast pulse valves 307 and 308 can realize the mixed pulse feeding of gas source 312 gas 1 and gas source 314 gas 3. Similarly, the mixed feeding of gas source 312 gas 1 and gas source 315 gas 4 can be realized, as can the mixed feeding of gas source 313 gas 2 and gas source 314 gas 3, and the mixed feeding of gas source 313 gas 2 and gas source 315 gas 4.

[0060] The rapid gas switching and feeding method is as follows: Taking the switching from gas 1 to gas 3 as an example, the single-item feeding method of repeated gas is used to realize the single feeding of gas 1. By closing the rapid pulse valve 308 and the rapid pulse valve 305 through the timing control system 309, the rapid pulse valve 303 is opened at the same time, and the feeding of gas 3 is realized through the rapid pulse valve 307. Similarly, the feeding of gas 1 to gas 4, the feeding of gas 2 to gas 3, and the feeding of gas 2 to gas 4 can be realized.

[0061] The above three methods can achieve single-phase gas feeding, mixed gas feeding, and rapid gas switching feeding by using different switching sequences. It is important to note that the gas path not used for gas intake should always be under vacuum to maintain gas purity.

[0062] 5) Microwave pulse feeding. The microwave power of the microwave source 2 is set by the timing control system 309 to feed into the plasma discharge chamber 5 with the same pulse period and duty cycle as the gas pulse system 3, so as to achieve rapid ionization of the feed gas. The time delay of the microwave control pulse and the gas control pulse can be optimized according to the ionization efficiency. Preferably, the microwave power is set not earlier than the gas feed to achieve sufficient gas ionization.

[0063] 6) Pulsed ion beam extraction. A high-voltage electric field 7 is applied to the set value, and the gas to be fed in is heated and ionized by the fed microwave, and an explosive growth of the ion beam is generated on the falling edge of the microwave, that is, the AFTERGLOW beam is extracted.

[0064] The above steps also include a cold electron feeding step. This includes, but is not limited to, providing cold electron feeding using a negative bias power supply to adjust the extraction current intensity of the ion beam 9.

[0065] In summary, during use, the pulsed beam 9 extracted from the ion source is focused by an electrostatic or magnetic lens and then analyzed and filtered by a deflecting magnet before being used for acceleration in a downstream accelerator. Because the working gas of the ion source can be pulsed and switched, the ion source can extract different types of ion beams under different pulses. Using this pulsed gas feed system 3, ion beam focusing and analysis transmission with the same mass-to-charge ratio can be achieved without changing the parameters of the downstream transmission line; ion focusing and analysis transmission with different mass-to-charge ratios and different extraction energies can be achieved through the timing control system 309 in coordination with the downstream transmission line and the high-voltage power supply.

[0066] For example, helium, oxygen, nitrogen, carbon dioxide, etc., can be introduced into the pulsed gas feed system, allowing the ion source to pulse-extract He. + O 4+ C 3+ Ion beams with the same mass-to-charge ratio can be focused, analyzed, and transported without additional back-end beamline components; the ion source can also extract ions including but not limited to He. 2+ O 2+ O 3+ N 3+ N 4+ C 3+ Ion beams with equal mass-to-charge ratios are rapidly excited and matched by back-end beamline elements and are ultimately accelerated by an accelerator.

[0067] The pulse method of this invention can achieve rapid switching of pulsed ion beams of multiple ion types using only one ion source, and can switch according to the time period. This method can be applied to ion accelerator systems, including but not limited to multi-ion tumor therapy, multi-ion material irradiation and other fields.

[0068] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A system for generating pulsed multi-ion beams using an electron cyclotron resonance ion source, characterized in that, include: A plasma discharge chamber, located within the ion source cavity, is used to generate the desired plasma; An electron cyclotron resonance ion source magnet is placed outside the ion source cavity to provide a plasma confinement magnetic field; A microwave source, located at the injection end of the ion source cavity, is used to transmit the generated microwave power to the plasma discharge chamber, ionize the gas atoms and molecules present inside the plasma discharge chamber, and generate the required plasma. The pulsed gas feed system is installed at the injection end of the ion source cavity and is used to feed a single gas or multiple gases into the ion source cavity to achieve precise feeding of the gas required by the ion source. The ion source cold electron gun is located at the injection end of the ion source cavity. It is used to prevent the escape of axial electrons in the plasma and to provide additional cold secondary electrons to be injected into the ion source cavity in order to adjust the ion beam extraction current. An ion source extraction component is located at the extraction end of the ion source cavity and is used to extract the ion beam. The pulsed gas feed system includes a gas source, a gas pipeline, a mechanical pump, a fast pulse valve, and a timing control system. The gas source can be a single-gas source or a source of multiple different types of gases. The mechanical pump is connected to the plasma discharge chamber via a pipeline, and the mechanical pump evacuates the gas transport pipeline. The output end of the gas source is connected to one end of the gas pipeline via the fast pulse valve, and the other end of the gas pipeline is connected to the pipeline between the mechanical pump and the plasma discharge chamber. On this pipeline, another fast pulse valve is respectively installed on both sides of the connection point with the gas pipeline. Each fast pulse valve is connected to the timing control system, and its operation is controlled by the timing control system. The pulsed gas feed system includes ≥2 gas paths, each connected to ≥2 gas sources. Depending on the requirements, the system controls a fast pulse valve to enable single-gas feed, multi-gas feed, and rapid switching between different types of gases. The system controls the opening and closing time and time interval of the fast pulse valve through a timing control system, thereby achieving precise control of the gas feed required by the ion source.

2. The system for generating pulsed multi-ion beams using an electron cyclotron resonance ion source as described in claim 1, characterized in that, It also includes vacuum acquisition equipment to provide the vacuum conditions required for plasma generation and efficient extraction.

3. The system for generating pulsed multi-ion beams using an electron cyclotron resonance ion source as described in claim 1, characterized in that, The ion source extraction component includes a high-voltage electric field and an insulating ceramic; the high-voltage electric field is set at both ends of the extraction electrode of the ion source cavity to provide a high-voltage electric field for extraction and to load it to the required potential; the insulating ceramic is provided at the extraction end of the ion source cavity.

4. The system for generating pulsed multi-ion beams using an electron cyclotron resonance ion source as described in claim 1, characterized in that, The number of rapid pulse valves is set according to the type of gas.

5. The system for generating pulsed multi-ion beams using an electron cyclotron resonance ion source as described in claim 1, characterized in that, The microwave source connects the microwave power source to the timing control system and provides a square wave signal with the required frequency and duty cycle as needed. Under the modulation of the square wave signal, the microwave power is output to the plasma discharge chamber of the ion source according to the required waveform.

6. A method for generating pulsed multi-ion beams using an electron cyclotron resonance ion source, characterized in that, A system implementation based on the electron cyclotron resonance ion source as described in any one of claims 1 to 5 to generate a pulsed multi-ion beam includes: The vacuum environment inside the ion source cavity is obtained through a vacuum acquisition device; The power of the microwave source is fed into the baking plasma discharge chamber for microwave training. When the vacuum reaches the set level, microwave power is fed into the plasma discharge chamber for baking training. After microwave training is completed, microwave feeding is stopped, and ion beam extraction high-voltage electric field training begins. After the high-voltage electric field training is completed, gas is fed in to ensure that the mechanical pump is in a normally open state and to promptly extract the vacuum in the gas pipeline. The gas is fed in a single direction, mixed in multiple gases, and rapidly switched in a pulsed gas feeding system by using different switching sequences. By setting the microwave power of the microwave source to the same pulse period and duty cycle as the gas pulse system through a timing control system, the microwave is fed into the plasma discharge chamber to achieve rapid ionization of the feed gas and extract an ion beam.

7. The method for generating a pulsed multi-ion beam using an electron cyclotron resonance ion source as described in claim 6, characterized in that, The microwave training includes: During the initial microwave loading, a change in vacuum level of orders of magnitude was observed in the vacuum detection equipment related to the ion source. Microwave loading continued until the vacuum returned to the previous state without change, until the microwave power was loaded to the normal operating power or above.

8. The method for generating a pulsed multi-ion beam using an electron cyclotron resonance ion source as described in claim 6, characterized in that, The high-voltage electric field training includes: Control the high voltage power supply to gradually increase the voltage output, observe whether there is any vacuum deterioration in the vacuum detector, and at the same time observe whether there is any arcing in the high voltage power supply. After the reading of the vacuum detector stabilizes and the high voltage power supply stops arcing, continue to apply the high voltage until the output high voltage is applied to the operating high voltage value or above.

9. The method for generating a pulsed multi-ion beam using an electron cyclotron resonance ion source as described in claim 6, characterized in that, It also includes a cold electron feeding step; by cold electron feeding, the extraction current intensity of the ion beam is adjusted.

Images