An atomizing device

Abstract

The application provides an atomization device, comprising an atomization chip, the atomization chip comprising a substrate layer, a heating layer, a flow channel layer, a nozzle layer and a plurality of atomization units, wherein the substrate layer is provided with an inlet channel and an outlet channel, the atomization unit comprising a resistor element in the heating layer, an atomization cavity in the flow channel layer and at least one nozzle in the nozzle layer, the nozzle having a preset shape and size to form atomized droplets of a preset particle size, the inlet channel, the first flow channel, the atomization cavity, the second flow channel and the outlet channel being sequentially communicated. The atomization device can directly control the particle size in the atomized droplet formation stage, produce a target size of particle size, and the particle size control is more accurate. The hot bubble type atomization has the advantages of high integration, the area of a single atomization unit is small, and a large flux can be realized. The circulating liquid path can avoid the liquid flowability obstacles caused by long-term static, can eliminate bubbles, and increase the initial wettability of the micro-holes.

Description

Technical Field

[0001] This invention belongs to the field of microfluidics and bioprinting technology, and relates to an atomizing device. Background Technology

[0002] Existing atomizing equipment generally uses mesh, ultrasonic, or venturi methods. The common approach is to first atomize the liquid into droplets of different sizes, and then screen the droplets to achieve different atomized particle sizes. This method is extremely inefficient. Summary of the Invention

[0003] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide an atomizing device to solve the problem of extremely low particle size screening efficiency of existing atomizing devices.

[0004] To achieve the above and other related objectives, the present invention provides an atomizing device, including an atomizing chip, the atomizing chip comprising:

[0005] A base layer, wherein the base layer is provided with an inlet channel and an outlet channel;

[0006] A heating layer is located on the base layer;

[0007] A flow channel layer is located on the heating layer, and the flow channel layer is provided with a first flow channel and a second flow channel;

[0008] The nozzle layer is located on the flow channel layer;

[0009] Multiple atomizing units, each atomizing unit including a resistor element located in the heating layer, an atomizing cavity located in the flow channel layer, and at least one spray hole located in the spray hole layer, the spray hole having a preset shape and size to form atomized droplets of a preset particle size;

[0010] The liquid inlet channel, the first flow channel, the atomizing chamber, the second flow channel, and the liquid outlet channel are connected in sequence.

[0011] Optionally, the plurality of atomizing units are arranged in a convex shape.

[0012] Optionally, one of the atomizing units includes one atomizing chamber and a plurality of spray holes.

[0013] Optionally, one of the atomizing units includes at least one set of the nozzles, each set of the nozzles including a plurality of nozzles evenly distributed on a circumference.

[0014] Optionally, the opening shape of the nozzle includes one of the following: teardrop shape, gourd shape, circle, ellipse, and polygon.

[0015] Optionally, the equivalent size of the nozzle opening ranges from 4 micrometers to 50 micrometers.

[0016] Optionally, at least two of the atomizing units have different equivalent nozzle opening sizes.

[0017] Optionally, the resistor element includes a positive electrode conductor layer, a negative electrode conductor layer, and a resistor layer. The positive electrode conductor layer and the negative electrode conductor layer are spaced apart by a predetermined distance in the horizontal direction, and at least one side of the positive electrode conductor layer and the negative electrode conductor layer is in contact with the resistor layer.

[0018] Optionally, the positive electrode conductor layer and the negative electrode conductor layer have arc-shaped profiles at their opposite ends.

[0019] Optionally, the resistor element includes a first resistor layer and a second resistor layer stacked together, with the positive electrode conductor layer and the negative electrode conductor layer sandwiched between the first resistor layer and the second resistor layer, and the first resistor layer and the second resistor layer fused at the interval between the positive electrode conductor layer and the negative electrode conductor layer.

[0020] Optionally, the resistor element further includes a pad that extends vertically through the second resistor layer and contacts the positive electrode conductor layer or the negative electrode conductor layer.

[0021] Optionally, the resistor element further includes a protective layer located on the second resistor layer and covering the fusion region of the first resistor layer and the second resistor layer.

[0022] Optionally, the atomizing device further includes a mist outlet, which protrudes from the atomizing chip and exposes a plurality of the atomizing units.

[0023] Optionally, the atomizing device further includes a liquid reservoir located on the back of the atomizing chip and communicating with the liquid inlet channel and the liquid outlet channel.

[0024] Optionally, the atomizing device further includes a control component, which is electrically connected to the atomizing chip.

[0025] Optionally, the control component includes a switch and a power supply.

[0026] As described above, the atomizing device of the present invention includes an atomizing chip, which comprises a substrate layer, a heating layer, a flow channel layer, a nozzle layer, and multiple atomizing units. The substrate layer has an inlet channel and an outlet channel. The heating layer is located on the substrate layer, and the flow channel layer is located on the heating layer, comprising a first flow channel and a second flow channel. The nozzle layer is located on the flow channel layer. Each atomizing unit includes a resistor element located in the heating layer, an atomizing cavity located in the flow channel layer, and at least one nozzle located in the nozzle layer. The nozzle has a preset shape and size to form atomized droplets of a preset particle size. The inlet channel, the first flow channel, the atomizing cavity, the second flow channel, and the outlet channel are sequentially connected. The atomizing device of the present invention can directly control the particle size during the droplet formation stage, producing a target particle size with more accurate particle size control. Thermal bubble atomization also has the advantage of high integration; the area of ​​a single atomizing unit is very small, enabling the realization of a high-throughput atomizing chip. By optimizing the shape of the conductor layer in the resistor element, the current distribution and heating area can be made more uniform, allowing the bubbles excited by the resistor element to drive the liquid in the atomizing chamber to be stably ejected from multiple nozzles. Liquid exchange in the atomization relies on a flowing liquid path. Liquid circulation through the inlet and outlet channels on both sides of the atomizing chamber avoids liquid flow obstruction caused by prolonged stagnation. Furthermore, the circulation path eliminates bubbles and increases the initial wettability of the micro-orifices. Multiple atomizing units can be arranged in a convex shape; this convex design facilitates liquid delivery within the effective area and avoids dead zones in liquid delivery. Attached Figure Description

[0027] Figure 1 The diagram shown is a structural schematic of the atomizing device of the present invention.

[0028] Figure 2 This is a top view of the atomizing chip.

[0029] Figure 3 This is another top view of the atomizing chip.

[0030] Figure 4 The image shown is a partial cross-sectional view of the atomizing chip.

[0031] Figure 5 The diagram shown is a cross-sectional view of the resistor element.

[0032] Figure 6 This is a partial top view of the resistor element.

[0033] Figure 7 This is another partial top view of the resistor element.

[0034] Figure 8 and Figure 9 All are shown as schematic diagrams of the atomizing unit comprising four teardrop-shaped nozzles evenly distributed on a circumference.

[0035] Figure 10 The diagram shown is a process flow diagram of a method for forming the atomizing chip.

[0036] Figure 11 This graph shows the comparison between the designed liquid volume and the actual atomized droplet size.

[0037] Component designation explanation

[0038] 1. Atomizing chip

[0039] 101 Atomizing Unit

[0040] 102 Basal layer

[0041] 103 Heating Layer

[0042] 104 Flow channel layer

[0043] 105 nozzle layer

[0044] 106 Liquid Inlet Channel

[0045] 107 Liquid outlet channel

[0046] 108 First Stream

[0047] 109 Second Flow Channel

[0048] 110 Resistor Element

[0049] 111 Atomizing Chamber

[0050] 112 nozzles

[0051] 113 First Resistor Layer

[0052] 114 Second Resistor Layer

[0053] 115 Positive electrode conductor layer

[0054] 116 Negative conductor layer

[0055] 117 pads

[0056] 118 Protective Layer

[0057] 119 Guiding Arc

[0058] 2 mist outlet

[0059] 3. Liquid storage container

[0060] 4 Control Components

[0061] 401 switch

[0062] Steps S1 to S4 Detailed Implementation

[0063] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0064] Please see Figures 1 to 11 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0065] This invention provides an atomizing device; please refer to [link / reference]. Figure 1 The diagram shows a structural schematic of the atomizing device, including an atomizing chip 1. In this embodiment, the atomizing device further includes a mist outlet 2, a liquid reservoir 3, and a control component 4. The mist outlet 2 protrudes from the atomizing chip 1, the liquid reservoir 3 is located on the back of the atomizing chip 1, and the control component 4 is electrically connected to the atomizing chip 1. The control component 4 includes a switch 401 and a power supply (not shown), which can be a lithium battery pack or other suitable power supply components.

[0066] Specifically, the atomizing chip 1 includes multiple atomizing units, which are arranged in a preset pattern to achieve a high-throughput atomization process. The mist outlet 2 exposes the multiple atomizing units. In this embodiment, the multiple atomizing units are preferably arranged in a convex shape. Here, "convex" is a geometric concept; if the line connecting any two points in a space belongs to that space, then that space is a convex set space, which is a convex shape in a two-dimensional plane. The convex arrangement of the multiple atomizing units in this embodiment makes liquid delivery within the effective area more convenient and avoids creating dead zones in liquid delivery.

[0067] For example, please refer to Figure 2 The image shows a top view of the atomizing chip 1, in which the plurality of atomizing units 101 are arranged in a roughly circular pattern. Please refer to... Figure 3The image shows another top view of the atomizing chip 1, in which the plurality of atomizing units 101 are arranged in a square. In other embodiments, in addition to circles and squares, the plurality of atomizing units 101 can also be arranged in any other convex shape, and can be flexibly arranged based on the atomization flux and the shape of the atomizing nozzle. This should not unduly limit the scope of protection of the present invention.

[0068] For example, please refer to Figure 4 The image shows a partial cross-sectional view of the atomizing chip 1. The atomizing chip 1 includes a base layer 102, a heating layer 103, a flow channel layer 104, and a nozzle layer 105. The base layer 102 has a liquid inlet channel 106 and a liquid outlet channel 107. The heating layer 103 is located on the base layer 102, and the flow channel layer 104 is located on the heating layer 103. The flow channel layer 104 has a first flow channel 108 and a second flow channel 109. The nozzle layer 105... Located on the flow channel layer 104, the atomizing unit 101 includes a resistor element 110 located in the heating layer 103, an atomizing cavity 111 located in the flow channel layer 104, and at least one nozzle 112 located in the nozzle layer 105. The nozzle 112 has a preset shape and size to form atomized droplets of a preset particle size. The liquid inlet channel 106, the first flow channel 108, the atomizing cavity 111, the second flow channel 109, and the liquid outlet channel 107 are connected in sequence.

[0069] As an example, the heating layer 103 includes an insulating dielectric layer, the resistor element 110 is located in the dielectric layer, and the heating area of ​​the resistor element 110 is exposed on the surface of the insulating dielectric layer.

[0070] Specifically, the atomizing device of the present invention can be used to atomize water-soluble liquids. The specific atomization principle is as follows: Current is passed through the resistor element 110 contained in the atomizing chamber 111, causing the resistor element 110 to heat up. The heat from the resistor element 110 generates rapidly expanding steam bubbles, which squeeze droplets out of the nozzle 112 above the atomizing chamber 111, thus dispersing the liquid into a mist. This process involves numerous interactions of heat, chemistry, and fluid dynamics. As the driving element for atomization, the resistor element 101 typically carries a current of 5 mA to 150 mA. As an example, at least two of the atomizing units 101 have nozzle openings with different equivalent sizes; by activating a specific atomizing unit, atomized droplets of a specific size can be obtained.

[0071] In this embodiment, the liquid reservoir 3 is connected to the liquid inlet channel 106 and the liquid outlet channel 107 in the base layer 102. After the atomization-driven bubbles are extinguished, the liquid is drawn from the liquid reservoir 3 on the back of the base layer 102 through the liquid inlet channel 106 and replenished to the atomization chamber 111 to achieve liquid circulation. This can avoid the liquid flow obstruction caused by long-term stagnation. In addition, the circulation can also eliminate bubbles. Furthermore, the existence of the circulation path increases the initial wettability of the micro-pores.

[0072] As an example, the resistor element 110 includes a positive electrode conductor layer, a negative electrode conductor layer, and a resistor layer. The positive electrode conductor layer and the negative electrode conductor layer are spaced apart by a predetermined distance in the horizontal direction, and at least one side of the positive electrode conductor layer and the negative electrode conductor layer is in contact with the resistor layer.

[0073] For example, please refer to Figure 5 The diagram shows a cross-sectional view of the resistor element 110, wherein the resistor element 110 includes a first resistor layer 113 and a second resistor layer 114 stacked together, a positive electrode conductor layer 115 and a negative electrode conductor layer 116 sandwiched between the first resistor layer 113 and the second resistor layer 114, and the first resistor layer 113 and the second resistor layer 114 are fused at the interval between the positive electrode conductor layer 115 and the negative electrode conductor layer 116.

[0074] Specifically, in Figure 5 In the illustrated scheme, the positive electrode conductor layer 115 and the negative electrode conductor layer 116 are sandwiched between the first resistor layer 113 and the second resistor layer 114. That is, both the upper and lower surfaces of the positive electrode conductor layer 115 and the negative electrode conductor layer 116 are in contact with the resistor layer. This design can reduce the electromigration at the bottom of the conductor layer when current passes through. During the electromigration process, the atoms of the conductor layer change from a single downward migration to a field-type multidirectional diffusion process, thereby solving the stress concentration problem of electromigration when the conductor layer is only located on one side of the resistor layer.

[0075] As an example, the first resistor layer 113 and the second resistor layer 114 can be single-layer material layers or multi-layer material layers. The materials of the first resistor layer 113 and the second resistor layer 114 can be heterogeneous materials or mixed materials, including but not limited to at least one of tantalum aluminum nitride, nickel-iron alloy, nickel-chromium alloy, tantalum nitride, aluminum nitride, tantalum aluminum alloy, and aluminum-chromium alloy. The thickness of the first resistor layer 114 is in the range of 1-299 nm, for example, 20 nm, and the thickness of the second resistor layer 114 is in the range of 701-1000 nm.

[0076] As an example, the positive electrode conductor layer 115 and the negative electrode conductor layer 116 can be single-layer material layers or multi-layer material layers. The materials of the positive electrode conductor layer 115 and the negative electrode conductor layer 116 can be heterogeneous materials or mixed materials, including but not limited to at least one of aluminum-copper alloy, aluminum-silicon-copper alloy, aluminum, gold, copper, silver, and platinum. The thickness range of the positive electrode conductor layer 115 and the negative electrode conductor layer 116 is 501-2000 nm.

[0077] As an example, such as Figure 5 As shown, the resistor element 110 also includes a pad 117, which penetrates the second resistor layer 114 in the vertical direction and contacts the positive electrode conductor layer 115 or the negative electrode conductor layer 116. The scheme of directly connecting the pad material to the conductor layer via vias in the second resistor layer avoids the problem of overheating and burnout of the pad material and conductor layer material when a large current is applied.

[0078] As an example, such as Figure 5 As shown, the resistor element 110 further includes a protective layer 118, which is located on the second resistor layer 114 and covers the fusion region of the first resistor layer 113 and the second resistor layer 114.

[0079] For example, please refer to Figure 6 The image shows a partial top view of the resistor element 110, wherein the outlines of the positive electrode conductor layer 115 and the negative electrode conductor layer 116 are shown. Figure 6 The second resistor layer 114, not shown, covers the positive electrode conductor layer 115 and the negative electrode conductor layer 116. In this embodiment, the two opposing ends of the positive electrode conductor layer 115 and the negative electrode conductor layer 114 have arc-shaped profiles, namely guiding arcs 119. Since the resistivity of the conductor layer is much lower than that of the resistor layer, the conductor layer is an equipotential layer. The arc-shaped design bends the equipotential layer on the resistor layer, thereby constraining and controlling the electron movement path, guiding the current to be distributed throughout the resistor layer, forming a more uniform current, and avoiding current concentration in the center, which would lead to current concentration in the local resistor layer. This is beneficial for obtaining a more durable resistor element.

[0080] For example, please refer to Figure 7 The image shows another partial top view of the resistor element 110, where the positive electrode conductor layer 115 and the negative electrode conductor layer 114 also have guiding arcs 119 at their opposite ends.

[0081] As an example, one of the atomizing units 101 includes an atomizing chamber 111 and a plurality of nozzles 112. Since the guiding arc 119 can guide the current, making the current distribution more uniform, the heating area is more uniform, so that the bubbles excited by the resistor element 110 can drive the liquid in the atomizing chamber 111 to be stably sprayed out from the plurality of nozzles 112.

[0082] As an example, one of the atomizing units 101 includes at least one set of the nozzles 112, each set of the nozzles 112 including a plurality of nozzles 112 evenly distributed on a circumference.

[0083] For example, please refer to Figure 8 and Figure 9 All are shown as schematic diagrams of the atomizing unit 101 comprising four teardrop-shaped nozzles evenly distributed on a circumference, differing only in the size of the nozzles. Figure 8 The tip of the teardrop-shaped nozzle in the middle faces inward. Figure 9 The teardrop-shaped nozzles in the spray pattern point outwards. Different nozzle sizes and layouts will achieve different atomization effects.

[0084] As an example, the opening shape of the nozzle 112 includes, but is not limited to, a teardrop shape, a gourd shape, a circle, an ellipse, and a polygon. Furthermore, there is a correlation between the nozzle size and the atomized droplet diameter. In this embodiment, the equivalent opening size of the nozzle 112 is selected to be in the range of 4 micrometers to 50 micrometers, which can achieve the control requirement of atomized droplet diameter from 1 micrometer to 50 micrometers. Specifically, the opening size and equivalent opening size of a circular nozzle are both its diameter. For irregularly shaped nozzles, the equivalent opening size is calculated by equating the area of ​​the irregular shape to a circle and taking the diameter of that circle as the equivalent opening size of the nozzle.

[0085] The atomizing device of the present invention is easy to process and manufacture. For example, please refer to [link to example]. Figure 10 The diagram shows a process flow chart of a method for forming the atomizing chip 101 in the atomizing device, including the following steps:

[0086] S1: Forming resistor elements on the substrate layer;

[0087] S2: Prepare inlet and outlet channels in the substrate layer;

[0088] S3: Prepare the flow channel layer;

[0089] S4: Prepare the nozzle layer.

[0090] The following includes Figure 5The following describes the specific fabrication process using an atomized chip as an example of a resistor element: First, a substrate layer is provided. This substrate layer may include a semiconductor substrate layer and an insulating layer located on the semiconductor substrate layer. The semiconductor substrate layer includes, but is not limited to, conventional semiconductor substrates such as silicon, germanium, germanium-silicon, III-V compound semiconductors, and silicon-on-insulator. The insulating layer includes, but is not limited to, a silicon dioxide layer. Next, a first resistor layer with a thickness of approximately 20 nm is fabricated on the insulating layer, and a conductive layer is fabricated. The conductive layer is patterned using microelectronic processes such as photolithography and etching to obtain a positive electrode conductive layer and a negative electrode conductive layer with a guiding arc. Then, a second resistor layer is fabricated, and the first resistor layer and the second resistor layer are fused at the interval between the positive electrode conductive layer and the negative electrode conductive layer through annealing. After that, a thermal resistance driver structure is fabricated, and a protective layer is placed on top of it. Next, liquid inlet channels and liquid outlet channels are fabricated in the substrate layer by etching. Then, a flow channel layer is fabricated using thin film pressing or other suitable methods, and the same thin film as the flow channel layer can be used to form the nozzle layer. Among them, the nozzles of different atomizing units can be formed into different shapes and sizes to selectively form atomized droplets of different particle sizes.

[0091] For example, please refer to Figure 11 The graph shows the relationship between the designed liquid volume and the actual atomized droplet size. The horizontal axis represents the particle diameter (diameter of the atomized droplet) in micrometers, and the vertical axis represents the designed volume in ×10⁻¹⁰. 3 The figure shows the correlation between the theoretically designed volume and the particle size, measured in cubic micrometers. The data points were obtained through actual measurements. The atomized droplets can be captured and their diameter measured by an optical droplet capture system, primarily calculated based on the deflection rate of the curvature of different droplet diameters. Most data points in the figure closely match the curve, while a small number deviate slightly, mainly due to measurement errors. Therefore, the atomization device of this invention can precisely control the particle size of the atomized droplets.

[0092] In summary, the atomizing device of the present invention includes an atomizing chip, which comprises a substrate layer, a heating layer, a flow channel layer, a nozzle layer, and multiple atomizing units. The substrate layer has an inlet channel and an outlet channel. The heating layer is located on the substrate layer, and the flow channel layer is located on the heating layer, comprising a first flow channel and a second flow channel. The nozzle layer is located on the flow channel layer. Each atomizing unit includes a resistor element in the heating layer, an atomizing cavity in the flow channel layer, and at least one nozzle in the nozzle layer. The nozzle has a preset shape and size to form atomized droplets of a preset particle size. The inlet channel, the first flow channel, the atomizing cavity, the second flow channel, and the outlet channel are sequentially connected. The atomizing device of the present invention can directly control the particle size during the droplet formation stage, producing a target particle size with more accurate particle size control. Thermal bubble atomization also has the advantage of high integration; the area of ​​a single atomizing unit is very small, enabling the realization of a high-throughput atomizing chip. By optimizing the shape of the conductor layer in the resistor element, the current distribution and heating area can be made more uniform, allowing the bubbles excited by the resistor element to drive the liquid in the atomizing chamber to be stably ejected from multiple nozzles. Liquid exchange in the atomization relies on a flowing liquid path. Liquid circulation through the inlet and outlet channels on both sides of the atomizing chamber avoids liquid flow obstruction caused by prolonged stagnation. Furthermore, the circulation also eliminates bubbles. In addition, the presence of the circulation path increases the initial wettability of the micro-holes. Multiple atomizing units can be arranged in a convex shape. This convex design makes liquid delivery within the effective area more convenient and avoids dead zones. Therefore, this invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.

[0093] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. An atomising device characterised in that, The atomization device comprises an atomization chip, the atomization chip comprises: a substrate layer, the substrate layer is provided with an inlet channel and an outlet channel; a heating layer located on the substrate layer; a flow channel layer located on the heating layer, the flow channel layer is provided with a first flow channel and a second flow channel; a nozzle layer located on the flow channel layer; a plurality of atomization units, each atomization unit comprises a resistor element located in the heating layer, an atomization cavity located in the flow channel layer, and at least one nozzle located in the nozzle layer, the nozzle has a preset shape and size to form atomized droplets with a preset particle size; a plurality of atomization units are arranged in a convex pattern; the nozzle openings of at least two atomization units have different equivalent sizes; wherein the inlet channel, the first flow channel, the atomization cavity, the second flow channel and the outlet channel are sequentially connected; the resistor element comprises a positive electrode lead layer, a negative electrode lead layer and a resistor layer, the positive electrode lead layer and the negative electrode lead layer are spaced apart by a preset distance in the horizontal direction, and at least one side of the positive electrode lead layer and the negative electrode lead layer is in contact with the resistor layer; the two ends of the positive electrode lead layer and the negative electrode lead layer facing each other have an arc-shaped profile; the resistor element comprises a first resistor layer and a second resistor layer stacked together, the positive electrode lead layer and the negative electrode lead layer are sandwiched between the first resistor layer and the second resistor layer, and the first resistor layer and the second resistor layer are fused at the spacing between the positive electrode lead layer and the negative electrode lead layer; the resistor element further comprises a solder pad, the solder pad penetrates the second resistor layer in the vertical direction and is in contact with the positive electrode lead layer or the negative electrode lead layer; the resistor element further comprises a protective layer, the protective layer is located on the second resistor layer and covers the fusion area of the first resistor layer and the second resistor layer.

2. The atomization device of claim 1, wherein: one atomization unit comprises one atomization cavity and a plurality of nozzles.

3. The atomization device of claim 2, wherein: one atomization unit comprises at least one group of nozzles, each group of nozzles comprises a plurality of nozzles uniformly distributed on a circumference.

4. The atomization device of claim 1, wherein: The opening shape of the nozzle includes one of a water droplet shape, a gourd shape, a circular shape, an oval shape, and a polygonal shape.

5. The atomization device of claim 1, wherein: The opening equivalent size of the nozzle ranges from 4 microns to 50 microns.

6. The atomization device of claim 1, wherein: The atomization device further comprises a mist outlet, the mist outlet is protruded on the atomization chip and exposes a plurality of atomization units.

7. The atomization device of claim 1, wherein: The atomization device further comprises a liquid reservoir, the liquid reservoir is located on the back of the atomization chip and is in communication with the inlet channel and the outlet channel.

8. The atomization device of claim 1, wherein: The atomization device further comprises a control assembly, the control assembly is electrically connected with the atomization chip.

9. The atomization device of claim 8, wherein: The control assembly comprises a switch and a power supply.

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