A method for preparing a diverse artificial synapse

Abstract

The application discloses a novel double-channel artificial synapse and a preparation method and application thereof. The double-channel artificial synapse is in series connection of a channel I and a channel II, and a channel layer is a calcium iron stone oxide of a transition metal. The double-channel artificial synapse utilizes migration of oxygen ions in an epitaxial single crystal oxide film and is highly anisotropic in dependence on crystal orientation. By changing the preparation direction of the channel in a substrate, the double-channel artificial synapse has multiple plasticity rules, which has great significance for simulating the complex diversity of a biological system in the field of artificial intelligence. Meanwhile, the application further provides a double-channel artificial synapse, which comprises a substrate, the double channel, a gate electrode, a side electrode and a gate electrode. The research utilizes an ionic liquid gating effect to induce oxygen ion migration, realizes reversible phase transition between an insulating ABO 2.5 and a metal ABO3 with anisotropic kinetics, and can be used for information storage and low-energy-consumption artificial intelligence devices.

Description

Technical Field

[0001] This invention belongs to the field of artificial intelligence, specifically relating to the preparation method and application of diverse artificial synapses. Background Technology

[0002] Three-terminal electrolyte transistors based on ion migration have become a natural choice for simulating connections (synapses) between neurons. Using the gate electrode as the synaptic tip to apply the peak, and the channel layer whose conductivity is altered by the gate voltage (stimulation) equivalent to the postsynaptic membrane, three-terminal electrolyte transistors can be used as artificial synapses to simulate the signal transmission and learning functions of biological synapses. Recently, many complex artificial synapses have been built to achieve functions such as memory, forgetting, learning, and logical computation. However, in biological systems, there is a large number of excitatory and inhibitory neurons or synapses working together, following different plasticity rules, i.e., synaptic diversity. Existing artificial synapses have a single plasticity rule and cannot simulate the diverse characteristics of biological synapses. Developing artificial synaptic devices with multiple plasticities to achieve similar diversity in the field of artificial synapses remains a challenging but urgent task. Summary of the Invention

[0003] The purpose of this invention is to provide a method for preparing diverse artificial synapses. Ion migration in oxides can alter their electrical conductivity, and this change in conductivity can be used to construct artificial synapses that mimic the function of biological synapses. Certain oxide crystals possess oxygen vacancy channels, and the ion migration rate along these channels is significantly higher than in other directions. Consequently, the resulting change in conductivity is also more rapid and dramatic. Therefore, this invention proposes the fabrication of single-crystal oxide films with specific oxygen vacancy channels, allowing for the design of artificial synaptic devices along different directions to simulate synaptic response capabilities with varying degrees of plasticity, thereby achieving diverse artificial synapses.

[0004] The oxide single-crystal thin film of the present invention is an epitaxially grown aberrant-iron-structured ABO film. 2.5 ((La,Sr)MnO 2.5 (La,Ca)MnO 2.5 (La,Sr)CoO 2.5 (La,Sr)FeO 2.5 SrFeO 2.5 and SrCoO 2.5 Alternatively, perovskite-structured ABO3 ((La,Sr)MnO3, (La,Ca)MnO3, (La,Sr)CoO3, (La,Sr)FeO3, SrFeO3, and SrCoO3). The implantation and extraction of oxygen ions within the aforementioned oxide films can achieve insulating antiferromagnetic calcium-iron-stone phase ABO3. 2.5The reversible transition between the metal ferromagnetic perovskite phase ABO3 and the oxide film modulates the conductivity. More importantly, in ABO3… 2.5 In oxides, the ordered oxygen vacancy channels along the

[110] crystal direction provide valuable space and fast channels for the diffusion of oxygen ions, thus the migration of oxygen ions in different crystal orientations is anisotropic.

[0005] Oxygen ion implantation and extraction in devices are accomplished using ionic liquids. The extremely high electric field generated by polarized ionic liquids provides a powerful tool for oxygen ion implantation and extraction. At a negative gate voltage (V... G Under an electric field, O2 and H2O in the ionic liquid decompose into oxygen ions, which migrate into the oxide film, increasing its conductivity. When a positive gate voltage is applied, oxygen ions are extracted from the oxide film, decreasing its conductivity. Conversely, when a negative gate voltage is applied, oxygen ions are injected into the oxide film, increasing its conductivity.

[0006] The device in this invention is Figure 1 (a) shows a dual-channel artificial synapse device. The width and length of channels I and II can be designed and fabricated according to actual needs, with a width range of 5-200 μm and a length range of 10-400 μm. Each channel has two electrodes, namely the S-terminal and the D-terminal, as well as a gate electrode G-terminal that does not contact the channel and another S'-terminal, resulting in a total of 6 electrodes. The channel material is ABO. 2.5 Or ABO3-type epitaxial oxide thin films. The dual-channel artificial synapse provided by this invention has channels along different crystal orientations, such as... Figure 1 (b) can be arranged arbitrarily in 360° direction within the plane according to actual needs. This is equivalent to four... <110> Crystal orientations:

[110] , [1-10], [-110], [-1-10]. The closer the orientation, the faster the oxygen ion migration rate and the faster the change in conductivity, which means the better the response capability of the artificial synapse. By controlling the channel angle, it is possible to prepare artificial synapses with different response capabilities, thus achieving a variety of artificial synapses.

[0007] The specific migration mechanism of oxygen ions in this type of device is as follows: Figure 1As shown in (c), under a negative gate voltage, oxygen ions decomposed in the ionic liquid are injected onto the surface of channel I, forming an oxygen ion concentration gradient in the vertical direction, driving oxygen ions to migrate into the thin film of channel I. The higher oxygen ion concentration in channel I also induces a lateral concentration gradient, driving oxygen ions in channel I to diffuse into channel II. When a positive gate voltage is applied, the oxygen ion concentration gradient and diffusion direction are exactly opposite. The dual-channel artificial synapse consists of channel I (electric field-driven oxygen ion migration) and channel II (concentration gradient-driven oxygen ion migration) connected in series. The dual-channel artificial synapses are fabricated on the same chip along different in-plane crystal orientations, and the dependence on crystal orientation makes the diffusion of oxygen ions highly anisotropic, providing possibilities for the application of synaptic diversity.

[0008] In the aforementioned artificial synapse, the epitaxial single-crystal oxide thin film ABO of the transition metal... x Where x is 2.5-3, A is a metal ion, B is a variable-valence 3d transition metal, and O is an oxygen ion. A is either Sr or La; B is specifically selected from Fe, Co, and Mn. The material can be prepared by pulsed laser deposition or molecular beam epitaxy on single-crystal substrates such as SrTiO3, LaAlO3, and (LaAlO3). 0.29 (Sr 0.5 Al 0.5 TaO3) 0.71 Above.

[0009] The thickness of the channel layer can be specifically 5-500 nm, and the channel layer can be specifically selected from the calcium iron stone structure ABO. 2.5 ((La,Sr)MnO 2.5 (La,Ca)MnO 2.5 (La,Sr)CoO 2.5 (La,Sr)FeO 2.5 SrFeO 2.5 and SrCoO 2.5 Or one of the perovskite structures ABO3 ((La,Sr)MnO3, (La,Ca)MnO3, (La,Sr)CoO3, (La,Sr)FeO3, SrFeO3, and SrCoO3). When using ABO 2.5 When using oxide-like materials as channel materials, a negative voltage should first be applied to the ionic liquid on them to achieve oxygen ion injection. When using ABO3-like oxides as channel materials, a positive voltage should first be applied to the ionic liquid on them to achieve oxygen ion extraction.

[0010] After the epitaxial thin film is prepared, dual-channel artificial synaptic devices can be fabricated using traditional micro / nano fabrication methods. The specific steps are as follows:

[0011] (1) A dual-channel device is etched on the surface of a thin film. This three-terminal device can perform read and write operations simultaneously.

[0012] (2) Side electrodes are deposited on the corresponding modules of the dual-channel device using magnetron sputtering technology, and gate electrodes are deposited on the substrate;

[0013] (3) The gate electrode is covered on the gate electrode and channel I of the dual-channel device to obtain the dual-channel artificial synapse device.

[0014] In the above preparation method, in step (1), the dual-channel device can be prepared by the following method: the dual-channel device is prepared by ultraviolet exposure technology, argon ion etching or wet etching in sequence. The width and length of channel I and channel II can be designed and prepared according to actual needs, with a width range of 5-200μm and a length range of 10-400μm.

[0015] The conditions for the ultraviolet exposure technology are as follows: ultraviolet light wavelength 200-400nm, here 375nm is selected, and power density is 2-12.5mW / cm². 2 Here, 3.5mW / cm is selected. 2 Exposure dose 50-100mJ / cm 2 After development, the exposed sample is wet etched. The etching solution is a KI mixture with a ratio of 2.5wt% KI + 6.5wt% HCl + 91wt% H2O. The film to be etched is immersed in the etching solution for 3 seconds.

[0016] In the above preparation method, in step (2), the gate electrode and side electrode can be prepared by the following method: the gate electrode and side electrode are fabricated sequentially using ultraviolet exposure technology, magnetron sputtering technology and stripping process.

[0017] The conditions for the ultraviolet exposure technology are as follows: ultraviolet light wavelength 200-400nm, here 375nm is selected, and power density is 2-12.5mW / cm². 2 Here, 3.5mW / cm is selected. 2 Exposure dose 50-100mJ / cm 2 .

[0018] Electrodes are fabricated using DC magnetron sputtering technology with a background vacuum better than 2×10⁻⁶. -4Pa, sputtering gas Ar, pressure 0.2 Pa. For Ti metal, sputtering power 12 W, growth rate 4 nm / min. For Pt metal, sputtering power 12 W, growth rate 5 nm / min. Both the channel electrode and gate electrode are Ti / Pt bilayer films, with Ti layer thickness of 10-30 nm (specifically 15 nm) and Pt layer thickness of 20-80 nm (specifically 40 nm). The side electrode and gate electrode are both Ti and Pt bilayer films from top to bottom.

[0019] The stripping process involves soaking the sample in acetone for 3-30 minutes (specifically 5 minutes) and then spraying it with a regular syringe to remove the photoresist.

[0020] In the above preparation method, step (3) involves covering the gate on the partial gate electrode and channel I of the dual synaptic device as follows: ionic liquid is dropped onto channel I using a probe, so that the ionic liquid covers channel I and part of the gate electrode to obtain the gate.

[0021] Aluminum wires were led out from each electrode of the dual-channel artificial synapse device for testing. A voltage of 0.1V was applied at points S and D in channels I and II, respectively, to read the current. A gate voltage V was applied between points G and S'. G .

[0022] The gate is an ionic liquid, specifically selected from N,N-diethyl-N-(2-methoxyethyl)-N-ammonium-bis-(trifluoromethylsulfonyl)-imide (DEME-TFSI) and / or 1-ethyl-3-methylimidazolium-bis-(trifluoromethylsulfonyl)-imide (EMIM-TFSI).

[0023] The present invention has the following advantages:

[0024] (1) The electric field generated by the polarized ionic liquid drives the migration of oxygen ions, realizing the phase transition process between the antiferromagnetic insulator and the ferromagnetic metal in the channel layer. It has the characteristics of good reversibility, good cycleability, non-volatility and easy realization.

[0025] (2) This three-terminal dual-channel artificial synapse based on ion migration can perform read and write operations simultaneously, has strong scalability, and has practical value in the application of artificial intelligence devices.

[0026] (3) In this dual-channel artificial synapse device, the dependence of electric field-driven oxygen ion migration on crystal orientation can achieve a diversity similar to biological synapses to complete complex functions in the nervous system. Attached Figure Description

[0027] Figure 1 (a) is a schematic diagram of the structure of the dual-channel artificial synapse device prepared in this invention; (b) is a schematic diagram of the preparation of dual-channel artificial synapses along different crystal orientations on the same substrate; (c) is a schematic diagram of the principle of oxygen ion migration in the dual-channel artificial synapse device of this invention.

[0028] Figure 2 (a) The electric field modulates the conductivity of (001)BM-SCO and (011)BM-SCO of channel I, respectively; (b) For (001)BM-SCO, the electric field modulates the conductivity of channels I and II when the channel layer is along the

[100] direction; (c) For (001)BM-SCO, the electric field modulates the conductivity of channels I and II when the channel layer is along the

[110] direction.

[0029] Figure 3 To implement Figure 1 Preparation of (001)SrCoO 2.5 The conductivity of the dual-channel artificial synaptic device was modulated by different gate voltages: (a) -0.5V; (b) -1.5V; (c) -2V. Detailed Implementation

[0030] The method of the present invention will be described below through specific embodiments, but the present invention is not limited thereto.

[0031] Unless otherwise specified, the experimental methods described in the following examples are conventional methods; the reagents and materials described are commercially available unless otherwise specified.

[0032] Example 1: Preparation of SrCoO 2.5 A dual-channel artificial synaptic device with an ionic liquid structure, with substrate options including SrTiO3 and (LaAlO3). 0.3 (SrAl 0.5 Ta 0.5 O3) 0.7 And LaAlO3:

[0033] (1) 40 nm SrCoO3 was grown on SrTiO3 substrates with (001) and (011) orientations, respectively. 2.5 The target material was SrCoO3, the growth temperature was 760℃, the laser energy was 400mJ, the target-substrate distance was 65mm, the growth oxygen pressure was 0.05Pa, the laser wavelength was 248nm, and the energy density was 1.1J / cm³. 2The frequency was 2Hz, the deposition time was 17min, and the thickness was approximately 40nm.

[0034] (2) Spin-coating AR-P5350 photoresist thin film at 6000 rpm for 1 min and baking at 110℃ for 3 min.

[0035] The pattern of a dual-channel artificial synaptic device with a channel width of 100 μm was created by exposing the thin film using ultraviolet lithography with an ultraviolet wavelength of 375 nm and a power density of 3.5 mW / cm². 2 Exposure dose 50-100mJ / cm 2 .

[0036] Develop the sample for 30 seconds using a developer specifically designed for AR-P5350 photoresist, without post-baking. After development and fixing, perform wet etching by immersing the sample in an etching solution containing 2.5wt% KI, 6.5wt% HCl, and 91wt% H2O for 3 seconds, then remove and rinse with deionized water. Remove the AR-P5350 photoresist using acetone, then rinse the sample sequentially with alcohol and deionized water to obtain a dual-channel artificial synapse device.

[0037] Then, photoresist is spin-coated as described above. Overlay etching is then performed, using an electrode pattern corresponding to the aforementioned dual-channel artificial synapse device, followed by ultraviolet light exposure at a wavelength of 375 nm and a power density of 3.5 mW / cm². 2 Exposure dose 50-100mJ / cm 2 After developing in the developer for 30 seconds, fix in deionized water.

[0038] (3) Electrode fabrication: Ti / Pt bilayer electrodes were deposited using magnetron sputtering technology. The sputtering power for Ti was 12W, the growth thickness was approximately 15nm, and the sputtering rate was 4min / min. The sputtering power for Pt was 12W, the growth thickness was approximately 40nm, and the sputtering rate was 4min / min. Stripping process: After immersing in acetone for 20min, the sample was sequentially cleaned with alcohol and deionized water to obtain the desired result. Figure 1 (a) shows the dual-channel artificial synapse device.

[0039] The dual-channel artificial synapse device has a channel I and a channel II with a width of 100 μm and a length of 400 μm. Each channel has two electrodes, namely the S end and the D end, as well as a gate electrode G end that does not contact the channel and another S' end, for a total of 6 electrodes.

[0040] (4) Use an ultrasonic spot welder to bond the aluminum wire (25μm). Apply a voltage of 0.1V to the S and D terminals of both channels respectively, and read the current to measure the conductivity of each channel. Apply a gate voltage V to the gate electrode G and S' terminals. G .

[0041] Using a probe, approximately 50 μL of the ionic liquid N,N-diethyl-N-(2-methoxyethyl)-N-ammonium-bis(trifluoromethanesulfonyl)imide (DEME-TFSI) is dropped onto channel I and the gate electrode as a gate. The ionic liquid covers the entire channel I and part of the gate electrode. The ionic liquid connects the gate electrode and channel I to form a gate. The phase transition of the channel is controlled by applying a gate voltage.

[0042] (5) Using the Versalab multifunctional testing system, dual-channel artificial synapses fabricated on the same substrate along different directions were tested, such as... Figure 1 As shown in (b), the conductivity of channels I and II as a function of gate voltage was measured by applying a gate voltage. A negative gate voltage drives oxygen ions from the ionic liquid to be injected into the channel layer, increasing the conductivity of the channel layer; a positive gate voltage extracts oxygen ions from the channel layer, decreasing the conductivity of the channel layer.

[0043] When the channel is along the

[100] direction, (001) and (011)SrCoO 2.5 The conductivity of channel I in a dual-channel artificial synaptic device varies with the gate voltage V. G Regulation Figure 2 (a) The positive and negative gate voltages increase and decrease the conductivity of the channel, respectively; and (001)SrCoO 2.5 Threshold voltage ratio of the conductivity change of the channel layer (011)SrCoO 2.5 Small. According to Figure 2 The results in (b) and (c), (001)SrCoO 2.5 When the channel direction is along

[100] and

[110] respectively, the conductivity of channel I changes similarly with the gate voltage regardless of whether the channel direction is along

[100] or

[110] ; however, the conductivity of channel II depends on the channel direction. When the channel direction is along

[110] , the threshold voltage required for the conductivity of channel II to change is smaller. Figure 1 (c) is a schematic diagram of the oxygen ion migration principle in the dual-channel artificial synapse device. The main principle is analyzed as follows: Under the action of a negative gate voltage, oxygen ions in the ionic liquid are injected into channel I under the drive of the electric field. A difference in oxygen ion concentration gradient appears between channel I and channel II, causing oxygen ions in channel I to diffuse into channel II. Under the action of a positive gate voltage, oxygen ions in channel I are extracted, and oxygen ions in channel II diffuse into channel I.

[0044] In (001)SrCoO 2.5In the

[110] direction, the presence of ordered oxygen vacancy channels provides valuable space and a fast pathway for oxygen ion diffusion. Therefore, oxygen ion diffusion driven by the concentration gradient in channel II in the

[110] direction is easier and requires a smaller threshold gate voltage. Due to the presence of oxygen vacancy channels, oxygen ions diffuse more readily in SrCoO2. 2.5 The migration exhibits a high degree of anisotropy.

[0045] SrCoO 2.5 The anisotropy of oxygen ion diffusion and the resulting conductivity response provide new insights into the construction of artificial synaptic diversity. Figure 3 The results of the modulation of dual-channel artificial synapses under electric fields of (a) -0.5V, (b) -1.5V, and (c) -2V are presented. Figure 3 (a)-(c) demonstrate (001)SrCoO 2.5 The conductivity of channel I along

[110] (σ1-

[110] ), and channels II along

[110] (σ2-

[110] ) and

[100] (σ2-

[100] ) is modulated by 40 consecutive gate voltage pulses (1s pulse width and interval). When V G At only -0.5V, σ1-

[110] exhibits short-term plasticity, while σ2-

[110] and σ2-

[100] show little to no plasticity at V. G The response is negligible, such as Figure 3 As shown in (a). When V G At -1.5V, long-term plasticity can be achieved under both σ1-

[110] and σ2-

[110] conditions, while σ2-

[100] remains almost unchanged. Figure 3 As shown in (b). When V G At -2V, both σ1-

[110] and σ2-

[110] exhibit long-term plasticity, while σ2-

[100] exhibits short-term plasticity, such as Figure 3 As shown in (c). In (001)SrCoO 2.5 Within a dual-channel artificial synapse, the varying conductivity of different channels makes it possible to simulate excitatory and inhibitory synapses.

[0046] Example 2: Preparation of SrFeO 2.5 A dual-channel artificial synaptic device with an ionic liquid structure, with substrate options including SrTiO3 and (LaAlO3). 0.3 (SrAl 0.5 Ta 0.5 O3) 0.7 And LaAlO3:

[0047] (1) SrFeO3 was grown on SrTiO3 substrates with (001) and (011) orientations, respectively. 2.5Select SrFeO 2.5 The target material, growth temperature 750℃, laser energy 400mJ, target-substrate distance 65mm, growth oxygen pressure 0.05Pa, laser wavelength 248nm, and energy density 1.1J / cm³ 2 , frequency 2Hz.

[0048] (2) SrFeO 2.5 Photoresist of AR-P5350 type was spin-coated at 6000 rpm for 1 min and then baked at 110℃ for 3 min.

[0049] The pattern of a dual-channel artificial synaptic device with a channel width of 100 μm was created by exposing the thin film using ultraviolet lithography with an ultraviolet wavelength of 375 nm and a power density of 3.5 mW / cm². 2 Exposure dose 50-100mJ / cm 2 .

[0050] Develop the AR-P5350 photoresist using a dedicated developer for 30 seconds, without post-baking. After development and fixing, perform wet etching by immersing the sample in an etching solution containing 2.5wt% KI, 6.5wt% HCl, and 91wt% H2O for 5 seconds, then remove and rinse with deionized water. Remove the AR-P5350 photoresist with acetone, then rinse with alcohol and deionized water to remove residual acetone, yielding a dual-channel artificial synapse device.

[0051] Then, photoresist is spin-coated as described above. Overlay etching is then performed, using an electrode pattern corresponding to the aforementioned dual-channel artificial synapse device, followed by ultraviolet light exposure at a wavelength of 375 nm and a power density of 3.5 mW / cm². 2 Exposure dose 50-100mJ / cm 2 After developing with developer for 30 seconds, fix in deionized water.

[0052] (3) Electrode fabrication: Ti / Pt bilayer electrode was deposited using magnetron sputtering technology. The sputtering power of Ti was 12W, the growth thickness was approximately 15nm, and the sputtering rate was 4min / min. The sputtering power of Pt was 12W, the growth thickness was approximately 40nm, and the sputtering time and sputtering rate were 5min / min. Stripping process: After immersing in acetone for 20min, the device was cleaned sequentially with alcohol and deionized water.

[0053] The dual-channel artificial synapse device has a channel I and a channel II with a width of 100 μm and a length of 400 μm. Each channel has two electrodes, S-terminal and D-terminal, as well as a gate electrode G-terminal that does not contact the channel and another S'-terminal, for a total of 6 electrodes.

[0054] (4) Use an ultrasonic spot welder to bond the aluminum wire (25μm). Apply a voltage of 0.1V to the S and D terminals of both channels respectively, and read the current to measure the resistivity of each channel. Apply a gate voltage V to the gate electrode G and S' terminals. G .

[0055] Using a probe, approximately 50 μL of the ionic liquid N,N-diethyl-N-(2-methoxyethyl)-N-ammonium-bis(trifluoromethanesulfonyl)imide (DEME-TFSI) is dropped onto channel I and the gate electrode as a gate. The ionic liquid covers the entire channel I and part of the gate electrode, connecting the gate electrode and channel I. The conductivity of the channel is modulated by applying a gate voltage.

[0056] (5) Using the Versalab multifunctional testing system, the conductivity curves of channel I and channel II as a function of gate voltage were tested by applying a gate voltage. A negative gate voltage drives oxygen ions in the ionic liquid to be injected into the channel layer, increasing the conductivity of the channel layer; a positive gate voltage extracts oxygen ions from the channel layer, decreasing the conductivity of the channel layer.

[0057] Regardless of whether the channel direction is along

[100] or

[110] , the conductivity of channel I changes similarly with the gate voltage. However, the conductivity of channel II changes depending on the channel direction. When the channel direction is along

[110] , the threshold voltage required for the conductivity change of channel II is smaller. The main principle is as follows: Under a negative gate voltage, oxygen ions in the ionic liquid are injected into channel I under the drive of the electric field, and a difference in oxygen ion concentration gradient appears between channel I and channel II, causing oxygen ions in channel I to diffuse into channel II; under a positive gate voltage, oxygen ions in channel I are extracted, accompanied by the diffusion of oxygen ions from channel II into channel I.

Claims

1. A dual-channel artificial synapse device, characterized in that, The device includes: Oxide single-crystal substrate; A dual-channel structure is disposed on the substrate, wherein the dual-channel structure is composed of channel I and channel II connected in series; Side electrode; Gate electrode; and: A gate, wherein the gate is an ionic liquid covering the channel I and a portion of the gate electrode, such that the gate electrode is connected to the channel I through the ionic liquid; Channel I and Channel II are made of ABO epitaxial single-crystal oxide thin film of transition metal. x The composition is as follows: x is 2.5-3, A is Sr or La ion, and B is a variable valence ion selected from Fe, Co, and Mn. d Transition metal ions, where O is an oxygen ion.

2. The dual-channel artificial synapse device as described in claim 1, characterized in that: The thickness of the dual-channel structure is 5-500 nm, and the dual-channel structure is selected from the calcium iron stone structure ABO. 2.5 Or perovskite structure ABO3, or calcite structure ABO3 2.5 Including (La) , Sr)MnO 2.5 、(La , Ca)MnO 2.5 、(La , Sr)CoO 2.5 、(La , Sr)FeO 2.5 SrFeO 2.5 and SrCoO 2.5 The perovskite structure ABO3 includes (La) , Sr)MnO3、(La , Ca)MnO3, (La) , Sr)CoO3、(La , SrFeO3, SrFeO3 and SrCoO3; The core function of the dual-channel artificial synapse device is that the rate of oxygen ion migration is related to the direction of channel fabrication. The conductivity of channel I is regulated by oxygen ion migration driven by an electric field, while the conductivity of channel II is regulated by oxygen ion diffusion driven by the concentration gradient between channel I and channel II.

3. The dual-channel artificial synapse device as claimed in claim 1, characterized in that: The oxide single-crystal substrate is selected from LaAlO3 and (LaAlO3). 0.29 (Sr 0.5 Al 0.5 TaO3) 0.71 and SrTiO3; Channels I and II are rectangular channels. The width of the Hall channel in the Hall device ranges from 5 to 200 μm, and the length ranges from 10 to 400 μm. The modules at the ends of the four branch channels are square in shape, with the side length of each square not less than the width of the channel. The modules are connected to each other through the channels and the four branch channels. The ionic liquid is selected from N,N-diethyl-N-(2-methoxyethyl)-N-ammonium-bis(trifluoromethanesulfonyl)imide and / or 1-ethyl-3-methylimidazol-bis(trifluoromethanesulfonyl)imide; The amount of the ionic liquid used is 10-80 μL, and part of the gate electrode is a G electrode; Both the side electrode and the gate electrode are bilayer films of Ti and Pt from top to bottom, wherein the thickness of the Ti film is 10-30 nm and the thickness of the Pt film is 20-80 nm; both the side electrode and the gate electrode can be prepared by magnetron sputtering.

4. The method for fabricating a dual-channel artificial synaptic device as described in any one of claims 1-3, characterized in that: The preparation method includes the following steps: (1) A dual-channel device is etched on the sample surface composed of the substrate and calcium iron oxide in sequence; (2) Side electrodes are deposited on the dual-channel device using magnetron sputtering technology, and door electrodes are deposited on the substrate; (3) The gate electrode is covered on the gate electrode and channel I of the dual-channel device to obtain the dual-channel artificial synapse.

5. The preparation method according to claim 4, characterized in that: In step (1), the dual-channel device is fabricated by the following method: the dual-channel device is sequentially fabricated using ultraviolet exposure technology and wet etching. The conditions for the ultraviolet exposure technology are as follows: ultraviolet light wavelength 200-400nm, power density 2-12.5mW / cm². 2 3.5mW / cm 2 Exposure dose 50-100mJ / cm 2 ; The wet etching conditions are as follows: etching in a 2.5wt%KI + 6.5wt%HCl + 91wt%H2O etching solution for 2-5 seconds; The etching is performed on the sample consisting of the substrate and the epitaxial single-crystal oxide thin film until the substrate is etched. In step (2), the gate electrode and the side electrode are prepared by the following method: the gate electrode and the side electrode are fabricated sequentially by ultraviolet exposure technology, magnetron sputtering technology and stripping process; The conditions for the ultraviolet exposure technology are as follows: ultraviolet light wavelength 375nm, power density 3.5mW / cm². 2 Exposure dose 50-100mJ / cm 2 ; The conditions for magnetron sputtering electrode deposition are as follows: Both the side electrode and the gate electrode are bilayer films of Ti and Pt from top to bottom. For metallic Ti, the sputtering power is 12W, the Ti layer thickness is 10-30nm, and the growth rate is 4nm / min; for metallic Pt, the sputtering power is 15W, the Pt layer thickness is 20-80nm, and the growth rate is 5nm / min. The stripping process involves soaking the sample in acetone for 3-30 minutes and then spraying it with a regular syringe to remove the photoresist. In step (3), the step of covering the gate on channel I and part of the gate electrode of the dual-channel device is as follows: using a probe, ionic liquid N,N-diethyl-N-(2-methoxyethyl)-N-ammonium-bis(trifluoromethanesulfonyl)imide is dropped onto channel I and the gate electrode as a gate. The amount of ionic liquid is 50 μL and covers the entire channel I and part of the gate electrode. The ionic liquid connects the gate electrode and channel I to obtain the gate.

6. The application of the dual-channel artificial synapse device as described in any one of claims 1-3 in the fields of artificial synapse diversity and artificial intelligence.

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