A sorting method and system for light-emitting diode dies

Abstract

The present invention provides a sorting method and system for light-emitting diode dies, and the sorting method for light-emitting diode dies includes: detecting the wavelength of each light-emitting diode die on a master wafer; obtaining a wavelength distribution map of all the light-emitting diode dies according to the wavelength of each light-emitting diode die; sorting the light-emitting diode dies into sub-wafers proportionally according to the number of light-emitting diode dies required in each sub-wafer within each wavelength band range; wherein, in each sub-wafer, the arrangement mode of the light-emitting diode dies is the same as that of the wavelength distribution map. By the sorting method and system for light-emitting diode dies provided by the present invention, the uniformity of a display panel can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and particularly to a method and system for sorting light emitting diode dies. Background Art

[0002] Light emitting diode dies have the characteristics of low energy consumption and high luminous efficiency, and are widely used in various commercial lighting, backlighting or display panels. In the manufacturing process of light emitting diode dies, on a whole wafer, due to process defects and other problems, the wavelengths of light emitting diode dies of the same color also have differences, which in turn affects the uniformity of display or lighting. Summary of the Invention

[0003] In view of the defects of the above-mentioned prior art, the present invention proposes a method and system for sorting light emitting diode dies, which can increase the light extraction channels in the light emitting epitaxial structure, so that light can be transmitted, thereby improving the light extraction effect of the light emitting diode dies.

[0004] To achieve the above and other purposes, the present invention proposes a method and system for sorting light emitting diode dies. The method for sorting the light emitting diode dies includes the following steps:

[0005] Detect the wavelength of each light emitting diode die on the master wafer;

[0006] According to the wavelength of each light emitting diode die, obtain the wavelength arrangement diagram of all the light emitting diode dies;

[0007] In each wavelength band range, sort the light emitting diode dies to the sub-wafers in equal proportion according to the number of light emitting diode dies required in the sub-wafers;

[0008] Wherein, in each sub-wafer, the arrangement mode of the light emitting diode dies is the same as that of the wavelength arrangement diagram.

[0009] In an embodiment of the present invention, obtaining the wavelength arrangement diagram of all the light emitting diode chips includes the following steps:

[0010] Obtain the wavelength range of all the light emitting diode dies; and

[0011] Determine each wavelength band range in the wavelength arrangement diagram.

[0012] In an embodiment of the present invention, obtaining the wavelength arrangement diagram of all the light emitting diode chips further includes the following steps:

[0013] Obtain the number of the light emitting diode dies in each wavelength band range; and

[0014] Obtain the percentage of the light emitting diode dies in each wavelength band range in the total number of the light emitting diode dies on all the master wafers.

[0015] In one embodiment of the present invention, obtaining the wavelength distribution map of all light-emitting diode chips includes the following steps:

[0016] Obtain the wavelength distribution map of the light-emitting diode dies;

[0017] Wherein, the abscissa of the wavelength distribution map is the wavelength band range, and the ordinate is the percentage of the light-emitting diode dies in each wavelength band range accounting for the total number of light-emitting diode dies on all mother wafers.

[0018] In one embodiment of the present invention, all the light-emitting diode dies on the mother wafer are arranged in a normal distribution.

[0019] In one embodiment of the present invention, all the light-emitting diode dies on the mother wafer are arranged in a sawtooth distribution that gradually increases or decreases.

[0020] In one embodiment of the present invention, in each wavelength band range, sorting the light-emitting diode dies into sub-wafers according to the number of light-emitting diode dies required in the sub-wafers includes the following steps:

[0021] Obtain the number of the light-emitting diode dies required for each sub-wafer;

[0022] According to the number of the light-emitting diode dies required for each sub-wafer, obtain the number of the light-emitting diode dies required for each sub-wafer in each wavelength band range; and

[0023] In each wavelength band range, sort the light-emitting diode dies into the sub-wafers.

[0024] In one embodiment of the present invention, the number of the light-emitting diode dies required for each sub-wafer in each wavelength band range is equal to the number of the light-emitting diode dies required for each sub-wafer multiplied by the percentage of the light-emitting diode dies in the wavelength band range accounting for the total number of light-emitting diode dies on all mother wafers.

[0025] In one embodiment of the present invention, when forming a display panel, the light-emitting diode dies in the same sub-wafer are located in the same area of the display panel.

[0026] This application also provides a sorting system for light-emitting diode dies, including:

[0027] A wavelength detection unit for detecting the wavelength of each light-emitting diode die on the mother wafer;

[0028] A wavelength distribution map obtaining unit for obtaining the wavelength distribution map of all light-emitting diode dies according to the wavelength of each light-emitting diode die; and

[0029] Sorting unit, in each wavelength range, proportionally sort the light-emitting diode chips to the sub-chips according to the number of light-emitting diode chips required in the sub-chips. Wherein, in each of the sub-chips, the arrangement of the light-emitting diode chips is the same as the wavelength arrangement diagram.

[0030] In summary, the present invention provides a method and system for sorting light-emitting diode chips, which can improve the uniformity of display or lighting and will not cause waste of light-emitting diode chips. Description of the Drawings

[0031] Figure 1 : Flowchart of a method for sorting light-emitting diode chips in this application.

[0032] Figure 2 : Flowchart of obtaining the wavelength arrangement diagram of all light-emitting diode chips in this application.

[0033] Figure 3 : Flowchart of sorting light-emitting diode chips to sub-chips in this application.

[0034] Figure 4 : Structural block diagram of a system for sorting light-emitting diode chips in this application.

[0035] Figure 5 : Block diagram of a computer-readable storage medium in this application.

[0036] Figure 6 : Structural principle block diagram of an electronic device in this application.

[0037] Figure 7 : Wavelength arrangement diagram of light-emitting diode chips on all mother chips and each sub-chip in this application.

[0038] Figure 8 : Structural diagram of a light-emitting diode display panel in this application. Detailed Embodiments

[0039] The following uses specific specific examples to illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this application belongs. The terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0041] In the description of the present application, it should be understood that the orientation or positional relationship indicated by terms such as "center", "upper", "lower", "front", "rear", "left", "right", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0042] Light-emitting diode display panels have the advantages of long lifespan, high contrast ratio, high resolution, fast response speed, wide viewing angle, rich colors, ultra-high brightness, and low power consumption, and can be widely used in various electronic devices. For example, they can be applied to televisions, laptop computers, monitors, mobile phones, watches, wearable displays, in-vehicle devices, virtual reality (VR) devices, augmented reality (AR) devices, portable electronic devices, game consoles, or other electronic devices.

[0043] Please refer to Figure 8 As shown, the light-emitting diode display panel includes a driving backplane 201 and pixel units disposed on the driving backplane 201. Among them, a driving circuit is provided on the driving backplane 201. When the light-emitting diode chip 10 is bonded to the driving backplane 201, the driving circuit on the driving substrate is electrically connected to the light-emitting diode chip 10 to control the on and off of the light-emitting diode chip 10. Among them, the driving circuit is, for example, a thin film transistor (TFT) circuit. Each pixel unit includes a plurality of sub-pixels, and each pixel unit includes at least, for example, 1 red sub-pixel, 1 green sub-pixel, and 1 blue sub-pixel. The driving circuit controls each sub-pixel to emit light independently, and then forms a mixed color and finally enables the pixel unit to emit a preset color light. The light-emitting pixel array formed by a plurality of pixel units can achieve the color display effect of the display panel. In some embodiments, the light-emitting unit includes light-emitting diode chips 10 of multiple light colors, such as red light-emitting diode chips, green light-emitting diode chips, and blue light-emitting diode chips. Then each light-emitting diode chip 10 is equivalent to a sub-pixel.

[0044] In some embodiments, please refer to Figure 8 As shown, an encapsulation layer 202 is provided on the pixel unit. The encapsulation layer 202 covers the light-emitting unit and fills the gaps between adjacent pixel units.

[0045] In some embodiments, the light-emitting diode chip is a mini light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED).

[0046] When forming a light-emitting diode display panel, first, light-emitting diode die need to be fabricated on a mother wafer, and the light-emitting diode die are arranged in a periodic and repetitive pattern on the wafer. After the fabrication of the light-emitting diode die on the wafer is completed, the wafer is cut into a number of light-emitting diode die. However, when forming the light-emitting diode die, due to some process or inherent defects, among the light-emitting diode die of the same batch and the same light color, the wavelength of the light emitted by each light-emitting diode die is different. When forming the display panel, if multiple light-emitting diode die with similar wavelengths are arranged in the same area and multiple light-emitting diode die with a large wavelength difference are arranged in another area, the color difference between the two display areas will be too large, affecting the uniformity of the display of the display panel.

[0047] Please refer to Figure 1 As shown, the present application provides a sorting method for light-emitting diode die, which can ensure the uniformity of the light emission of the light-emitting diode die in the display panel, specifically as shown in steps S101 to S103.

[0048] S101. Detect the wavelength of each light-emitting diode die on the mother wafer.

[0049] S102. Obtain the wavelength distribution map of all the light-emitting diode die according to the wavelength of each light-emitting diode die.

[0050] S103. In each wavelength range, sort the light-emitting diode die into the sub-wafers in proportion according to the number of light-emitting diode die required in the sub-wafer.

[0051] Specifically, please refer to Figure 1 As shown, the wavelength range of red light-emitting diode die is, for example, 625 nm to 740 nm, the wavelength range of green light-emitting diode die is, for example, 500 nm to 565 nm, and the wavelength range of blue light-emitting diode die is, for example, 440 nm to 485 nm. For the light-emitting diode die of the same color, due to some defects or the process during the manufacturing process, the wavelengths of the light-emitting diode die of the same color are different. When the wavelength of the light-emitting diode die is different, the color is different. When the wavelength of the light-emitting diode die is 700 nm, it presents a dark red color. When the wavelength of the light-emitting diode die is 660 nm, it presents a red color. When the wavelength of the light-emitting diode die is 645 nm, it presents a bright red color. Therefore, after forming multiple light-emitting diode die on the wafer, each light-emitting diode die needs to be cut and the wavelength of each light-emitting diode die needs to be detected.

[0052] Please refer to Figure 1As shown, in step S101, the number of master wafers to be detected is not limited, and the number of master wafers can be determined according to the number of sub-wafers. It is only necessary to ensure that the total number of light-emitting diode chips on all master wafers is greater than or equal to the total number of light-emitting diode chips required for this batch of sub-wafers.

[0053] Please refer to Figure 1 and Figure 2 As shown, in an embodiment of the present invention, after detecting the wavelengths of a batch of light-emitting diode chips, step S102 is performed. According to the wavelength of each light-emitting diode chip, a wavelength arrangement diagram of all light-emitting diode chips is obtained. In this embodiment, step S102 specifically includes steps S121 to S125.

[0054] S121. Obtain the wavelength range of all light-emitting diode chips.

[0055] Specifically, in an embodiment of the present application, the light-emitting diode chips on this batch of master wafers emit blue light, for example, and the wavelength range of all light-emitting diode chips is, for example, 447.4 nm to 459.4 nm.

[0056] S122. Determine each band range in the wavelength arrangement diagram.

[0057] Specifically, in an embodiment of the present application, when obtaining each band range, the difference between the maximum wavelength and the minimum wavelength can be obtained according to the wavelength range, and the band length can be determined according to the difference, and each band range can be obtained according to the specific band length. In a batch of light-emitting diode chips, the wavelength range of all light-emitting diode chips is, for example, 447.4 nm to 459.4 nm, and the difference between the maximum wavelength and the minimum wavelength is 12 nm. Then, with a band length of, for example, 1 nm, the wavelength range of all light-emitting diode chips is divided into, for example, 12 band ranges. That is, all band ranges are 447.4 nm to 448.4 nm, 448.4 nm to 449.4 nm, 449.4 nm to 450.4 nm, 450.4 nm to 451.4 nm, 451.4 nm to 452.4 nm, 452.4 nm to 453.4 nm, 453.4 nm to 454.4 nm, 454.4 nm to 455.4 nm, 455.4 nm to 456.4 nm, 456.4 nm to 457.4 nm, 457.4 nm to 458.4 nm, and 458.4 nm to 459.4 nm. In other embodiments, when the difference between the maximum wavelength and the minimum wavelength is too large or too small, the band length is adjusted. The range of the band length is, for example, 0.1 nm to 3 nm, specifically, for example, 0.1 nm, 0.2 nm, or 2.5 nm, etc. When the difference between the maximum wavelength and the minimum wavelength is too large, the band length is increased, and when the difference between the maximum wavelength and the minimum wavelength is too small, the band length is decreased.

[0058] S123. Obtain the number of light-emitting diode dies in each wavelength band range.

[0059] In this application, light-emitting diode dies with the same wavelength band range can be placed together, which is convenient for selecting light-emitting diode dies corresponding to the wavelength band range during sorting. During the obtaining process, in each wavelength band range, when the wavelength of the light-emitting diode die is at the endpoints of two wavelength band ranges and coincides with the endpoints of both wavelength band ranges simultaneously, it is uniformly based on the left endpoint or the right endpoint to avoid double counting during statistics.

[0060] S124. Obtain the percentage of the number of light-emitting diode dies in each wavelength band range in the total number of light-emitting diode dies on all master wafers.

[0061] Specifically, as shown in Table 1, in an embodiment of this application, the number of light-emitting diode dies on all master wafers is, for example, 1800, and the percentage of the number of light-emitting diode dies in each wavelength band range in the total number of light-emitting diode dies on all master wafers is as shown in Table 1.

[0062] Table 1 Statistical table of the number and proportion of light-emitting diode dies in each wavelength band range

[0063]

[0064] S125. Obtain the wavelength distribution diagram of the light-emitting diode dies.

[0065] Specifically, please refer to Figure 2 As shown, in this application, the abscissa of the wavelength distribution diagram of the light-emitting diode dies is the wavelength band range, and the ordinate is the percentage of the number of light-emitting diode dies in each wavelength band range in the total number of light-emitting diode dies on all master wafers. In this application, in the abscissa, the order of each wavelength band range can be adjusted on the abscissa and does not need to be arranged according to the wavelength. In an embodiment of this application, by adjusting the manufacturing process, the number of light-emitting diode dies in each wavelength band range can be adjusted so that the wavelength distribution diagram of the light-emitting diode dies conforms to a preset distribution. As Figure 7 As shown, in some embodiments, the wavelength distribution diagram of the light-emitting diode dies is a normal distribution. In other embodiments, the wavelength distribution diagram of the light-emitting diode dies can also be a sawtooth distribution that gradually increases or decreases, etc.

[0066] Please refer to Figure 2 As shown, in some embodiments, when the total number of light-emitting diode dies on all master wafers is much larger than the total number of light-emitting diode dies required for this batch of sub-wafers and the total number of light-emitting diode dies on all master wafers does not conform to the preset distribution, then the redundant light-emitting diode dies can be selected so that the total number of available light-emitting diode dies conforms to the preset distribution.

[0067] Please refer toFigure 7 As shown in the figure, in an embodiment of the present application, for example, the light-emitting diode chips on all master wafers are arranged in a normal distribution. At this time, the uniformity of the light-emitting diodes can be ensured, and relevant processes do not need to be adjusted.

[0068] Please refer to Figure 1 As shown in the figure, after obtaining the wavelength distribution map of the light-emitting diode chips, step S103 is performed: in each wavelength band range, according to the number of light-emitting diode chips required in the sub-wafer, the light-emitting diode chips are sorted proportionally into the sub-wafer.

[0069] When encapsulating and transporting, the chips on a batch of master wafers need to be encapsulated into sub-wafers. When each sub-wafer is applied, it is in the same area of the display panel. Therefore, all the light-emitting diode chips on each sub-wafer are set to conform to the arrangement of the light-emitting diode chips on all the master wafers. When the light-emitting diode chips on the sub-wafer are transferred to the driving backplane, the light-emitting diode chips in each area conform to the arrangement of the light-emitting diode chips on all the master wafers. At this time, in each area, the brightness of the light-emitting diode chips is the same, and the adjacent areas are evenly displayed.

[0070] Please refer to Figure 1 and Figure 3 As shown in the figure, in the present application, step S103 specifically includes steps S131 to S133.

[0071] S131: Obtain the number of light-emitting diode chips required for each sub-wafer.

[0072] In the present application, the number of light-emitting diode chips required for the sub-wafer is set according to specific circumstances, which can be dozens or hundreds.

[0073] S132: According to the number of light-emitting diode chips required for each sub-wafer, obtain the number of light-emitting diode chips required for each sub-wafer in each wavelength band range.

[0074] Specifically, in the present application, in each wavelength band range, the number of light-emitting diode chips required is equal to the number of light-emitting diode chips required for each sub-wafer multiplied by the percentage of the light-emitting diode chips in each wavelength band range in all the master wafers accounting for the total number of light-emitting diode chips on all the master wafers.

[0075] In a specific embodiment of the present application, in the range of 447.4 nm to 448.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 6.67%. In the range of 448.4 nm to 449.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 1.11%. In the range of 449.4 nm to 450.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 4.44%. In the range of 450.4 nm to 451.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 6.11%. In the range of 451.4 nm to 452.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 18.33%. In the range of 452.4 nm to 453.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 11.67%. In the range of 453.4 nm to 454.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 16.67%. In the range of 454.4 nm to 455.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 16.67%. In the range of 455.4 nm to 456.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 8.33%. In the range of 456.4 nm to 457.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 7.78%. In the range of 457.4 nm to 458.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 1.67%. In the range of 458.4 nm to 459.4 nm, the number of light-emitting diode dies required for each sub-chip is: N × 0.56%. Wherein, N is the total number of light-emitting diode dies required for the sub-chip.

[0076] S133. In each wavelength band range, sort the light-emitting diode dies into the sub-chips.

[0077] After the sorting is completed, in each sub-chip, the percentage of the number of light-emitting diode dies in each wavelength band range accounting for the total number of light-emitting diode dies required for the sub-chip is equal to the percentage of the number of light-emitting diode dies in each wavelength band range among all the master chips accounting for the total number of light-emitting diode dies on all the master chips. At this time, the arrangement pattern of the light-emitting diode dies in each sub-chip is the same as that of the light-emitting diode dies in all the master chips, having the same or similar wavelength arrangement pattern. This can not only make the light-emitting diode dies of the sub-chip and the master chip arranged in equal proportion, but also consume the light-emitting diode dies on all the master chips in equal proportion without causing waste.

[0078] When forming a light-emitting diode display panel, arrange the light-emitting diode dies on each sub-chip in the same area of the driving backplane, and the specific arrangement pattern can be obtained through experiments, as long as the area of one sub-chip range is evenly displayed.

[0079] The present invention also provides a sorting system for light-emitting diode chips. For details, please refer to Figure 4 As shown, the sorting system for light-emitting diode chips includes a wavelength detection unit 201, a wavelength arrangement map acquisition unit 202, and a sorting unit 203. Among them, the detection unit 201 detects the wavelength of each light-emitting diode chip on the master wafer. The wavelength arrangement map acquisition unit 202 is connected to the detection unit 201 and can obtain the wavelength arrangement map of all light-emitting diode chips according to the wavelength of each light-emitting diode chip. The specific execution process is as shown in the above steps S121 to S124. The sorting unit 203 is connected to the wavelength arrangement map acquisition unit 202 and can proportionally sort the light-emitting diode chips into the sub-wafers according to the number of light-emitting diode chips required in each wavelength band range. The specific execution process is as shown in the above steps S131 to S133.

[0080] Please refer to Figure 5 As shown, this embodiment also proposes a computer-readable storage medium 3. The computer-readable storage medium 3 stores computer instructions 30, and the computer instructions 30 execute the sorting method for light-emitting diode chips. The computer-readable storage medium 3 can be an electronic medium, a magnetic medium, an optical medium, an electromagnetic medium, an infrared medium, or a semiconductor system or a propagation medium. The computer-readable storage medium 3 can also include semiconductor or solid-state memories, magnetic tapes, removable computer disks, random access memories (RAMs), read-only memories (ROMs), hard disks, and optical disks. The optical disks can include compact disc read-only memories (CD-ROMs), compact disc read / write (CD-RWs), and DVDs.

[0081] Please refer to Figure 6As shown in the figure, the present invention also provides an electronic device, including a processor 40 and a memory 50. The memory 50 stores program instructions, and the processor 40 runs the program instructions to implement the above-mentioned sorting method for light-emitting diode dies. The processor 40 can be a general-purpose processor, including a central processing unit (CPU for short), a network processor (NP for short), etc.; it can also be a digital signal processor (DSP for short), an application specific integrated circuit (ASIC for short), a field-programmable gate array (FPGA for short), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components; the memory 50 may include a random access memory (RAM for short), and may also include a non-volatile memory, such as at least one disk memory. The memory 50 can also be an internal memory of the random access memory (RAM) type. The processor 40 and the memory 50 can be integrated into one or more independent circuits or hardware, such as: an application specific integrated circuit (ASIC). It should be noted that when the computer program in the memory 50 can be implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, an electronic device, or a network device, etc.) to execute all or part of the steps of the methods of the various embodiments of the present invention.

[0082] In summary, for the sorting method of the light-emitting diode die provided by the present application, the wavelength of each light-emitting diode die on the master wafer is first detected. Then, according to the wavelength of each light-emitting diode die, the wavelength range of the light-emitting diode die is divided into multiple bands, and the number of light-emitting diode dies in each band range is obtained, so as to obtain the wavelength distribution diagram of all the light-emitting diode dies. Finally, in each band range, according to the number of light-emitting diode dies required in the sub-wafer, the light-emitting diode dies are sorted proportionally to the sub-wafer, so that the wavelength arrangement mode of the light-emitting diode dies in the sub-wafer is the same as that of the light-emitting diode dies in all the master wafers.

[0083] The above description is only the preferred embodiment of the present application and the description of the applied technical principle. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by the specific combination of the above technical features, and should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the technical solution formed by the mutual replacement of the above features and the technical features (but not limited to) with similar functions disclosed in the present application.

[0084] Except for the technical features described in the specification, the rest of the technical features are well-known to those skilled in the art. To highlight the innovative features of the present invention, the rest of the technical features are not described herein again.

Claims

1. A sorting method for light-emitting diode dies, characterized in that, Including the following steps: Detect the wavelength of each light-emitting diode die on the master wafer; Obtain the wavelength distribution map of all the light-emitting diode dies according to the wavelength of each said light-emitting diode die; In each wavelength band range, sort the light-emitting diode dies to the sub-wafers in proportion according to the number of light-emitting diode dies required in the sub-wafers; Wherein, the arrangement mode of the light-emitting diode dies in each said sub-wafer is the same as that of the light-emitting diode dies in the master wafer, and has the same or similar said wavelength distribution map; Wherein, in each wavelength band range, sorting the light-emitting diode dies to the sub-wafers in proportion according to the number of light-emitting diode dies required in the sub-wafers includes the following steps: Obtain the number of the light-emitting diode dies required for each said sub-wafer; According to the number of the light-emitting diode dies required for each said sub-wafer, obtain the number of the light-emitting diode dies required for each sub-wafer in each wavelength band range; and In each said wavelength band range, sort the light-emitting diode dies into the said sub-wafers; The number of the light-emitting diode dies required for each sub-wafer in each wavelength band range is equal to the number of the light-emitting diode dies required for each said sub-wafer multiplied by the percentage of the light-emitting diode dies in the said wavelength band range in the total number of the light-emitting diode dies on all the master wafers.

2. The sorting method of the light-emitting diode die according to claim 1, wherein Obtaining the wavelength distribution map of all the light-emitting diode chips includes the following steps: Obtain the wavelength range of all the light-emitting diode dies; and Determine each wavelength band range in the said wavelength distribution map.

3. The sorting method of the light-emitting diode die according to claim 2, characterized in that, Obtaining the wavelength distribution map of all the light-emitting diode chips further includes the following steps: Obtain the number of the light-emitting diode dies in each said wavelength band range; and Obtain the percentage of the light-emitting diode dies in each said wavelength band range in the total number of the light-emitting diode dies on all the master wafers.

4. The sorting method of the light-emitting diode die according to claim 3, characterized in that, Obtaining the wavelength distribution map of all the light-emitting diode chips includes the following steps: Obtain the wavelength distribution map of the light-emitting diode dies; Wherein, the abscissa of the said wavelength distribution map is the wavelength band range, and the ordinate is the percentage of the light-emitting diode dies in each said wavelength band range in the total number of the light-emitting diode dies on all the master wafers.

5. The sorting method of the light-emitting diode die according to claim 1, characterized in that All the light-emitting diode dies on the master wafer are arranged in a normal distribution.

6. The sorting method of the light-emitting diode chip according to claim 1, wherein All the light-emitting diode dies on the master wafer are arranged in a gradually increasing or decreasing sawtooth distribution.

7. The sorting method of the light-emitting diode die according to claim 1, wherein When forming a display panel, the light-emitting diode dies in the same said sub-wafer are located in the same area of the display panel.

8. A sorting system for light-emitting diode dies, characterized in that, Including: A wavelength detection unit for detecting the wavelength of each light-emitting diode die on the master wafer; A wavelength distribution map obtaining unit for obtaining the wavelength distribution map of all the light-emitting diode dies according to the wavelength of each said light-emitting diode die; And A sorting unit for sorting the light-emitting diode dies to the sub-wafers in proportion according to the number of light-emitting diode dies required in the sub-wafers in each wavelength band range, wherein, the arrangement mode of the light-emitting diode dies in each said sub-wafer is the same as that of the light-emitting diode dies in the master wafer, and has the same or similar said wavelength distribution map; Among them, in each band range, sorting the light-emitting diode dies into the sub-chips in proportion according to the number of light-emitting diode dies required in the sub-chips includes the following steps: Obtain the number of the light-emitting diode dies required for each of the sub-chips; According to the number of the light-emitting diode dies required for each of the sub-chips, obtain the number of the light-emitting diode dies required for each sub-chip in each band range; and In each of the band ranges, sort the light-emitting diode dies into the sub-chips; The number of the light-emitting diode dies required for each sub-chip in each band range is equal to the number of the light-emitting diode dies required for each of the sub-chips multiplied by the percentage of the light-emitting diode dies in the band range to the total number of the light-emitting diode dies on all the master chips.

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