Magnetic sensor device and magnetic sensor system

Abstract

A magnetic sensor device of the present application includes at least one magnetic sensor and a support. A center of gravity of an element arrangement region of the at least one magnetic sensor is offset from a center of gravity of a reference plane of the support. The at least one magnetic sensor includes four resistance portions each composed of a plurality of magnetic resistance effect elements. Magnetization of a free layer of each of two resistance portions includes a component of a third magnetization direction. Magnetization of a free layer of each of the other two resistance portions includes a component of a fourth magnetization direction opposite to the third magnetization direction.

Description

[0001] Technology Area

[0002] This invention relates to a magnetic sensor device comprising a magnetic sensor and a support. Background Technology

[0003] In recent years, magnetic sensor devices that detect components of an applied magnetic field in multiple directions have been used for various applications. One such application is a magnetic position detection device that detects the position of a magnet capable of three-dimensional movement.

[0004] A magnetic position detection device includes, for example, a magnetic sensor device, a magnet capable of moving along a predetermined spherical surface centered on the magnetic sensor device, and a signal processing circuit. The magnetic sensor device detects three components in three different directions of a magnetic field generated by the magnet and applied to the magnetic sensor device, and generates three detection signals corresponding to these three components. The signal processing circuit generates position information representing the position of the magnet based on the three detection signals. Chinese Patent Application Publication No. 101203769A discloses a three-axis magnetic sensor comprising an X-axis sensor, a Y-axis sensor, and a Z-axis sensor.

[0005] To improve the accuracy of location information, efforts are being made to enhance the detection accuracy of magnetic sensor devices. Japanese Patent Application Publication No. 2015-95630 discloses a magnetic sensor in which the magnetization orientation of the free layer of a first magnetoresistive element is opposite to that of the free layer of a second magnetoresistive element, thereby reducing the decrease in detection accuracy of external magnetic fields caused by deviations in the magnetization orientation of the pinned layers. Furthermore, International Patent Application Publications Nos. 2012 / 172946 and 2015 / 125699 disclose magnetic sensors in which the magnetization directions of the free magnetic layers of a pair of magnetoresistive elements are oriented in opposite directions, suppressing the decrease in the linearity of the sensor output caused by deviations in the direction of the measured magnetic field.

[0006] Furthermore, during the use of position detection devices, unexpected external forces are sometimes applied to the substrate on which the magnetic sensor is mounted. Additionally, the temperature of the substrate sometimes changes due to environmental variations. In these cases, stress is applied to the magnetic sensor, resulting in errors in the detection signal of the magnetic sensor.

[0007] Here, we consider the case where the substrate has a simple planar shape, such as a rectangle. When stress is generated within the substrate due to external forces or temperature, the stress distribution within the substrate becomes symmetrical about the centroid of the substrate's planar shape. Therefore, to suppress the effects of stress, we consider mounting the magnetic sensor on the substrate with the centroid of the magnetic sensor's planar shape coinciding with the centroid of the substrate's planar shape. However, in a 3-axis magnetic sensor as disclosed in Chinese Patent Application Publication No. 101203769A, not all sensors can be mounted as described above. Furthermore, in actual substrates, there are structural elements other than the magnetic sensor, such as terminals. Therefore, sometimes the magnetic sensor cannot be mounted as described above. Summary of the Invention

[0008] The purpose of this invention is to provide a magnetic sensor device and magnetic sensor system capable of suppressing the effects of applied stress.

[0009] The magnetic sensor device of the present invention comprises: at least one magnetic sensor including a plurality of magnetoresistive effect elements and an element arrangement region for arranging the plurality of magnetoresistive effect elements, and configured to detect an object magnetic field as the target magnetic field; and a support body supporting the at least one magnetic sensor and having a reference plane. When viewed from a first reference direction, the center of gravity of the element arrangement region deviates from the center of gravity of the reference plane. The first reference direction is a direction perpendicular to the reference plane.

[0010] At least one magnetic sensor further includes: a first resistive portion and a second resistive portion connected in series along a first path that serves as an electrical connection between the first and second connection points; and a third resistive portion and a fourth resistive portion connected in series along a second path that serves as an electrical connection between the first and second connection points. The first and fourth resistive portions are connected to the first connection point. The second and third resistive portions are connected to the second connection point. A plurality of magnetoresistive effect elements constitute the first to fourth resistive portions. Each of the plurality of magnetoresistive effect elements includes: a magnetized fixed layer having a fixed orientation, a magnetized free layer having an orientation that can change according to the magnetic field of the object, and a gap layer disposed between the magnetized fixed layer and the free layer.

[0011] The magnetization of the magnetization fixing layer of each of the first and third resistive sections includes a component of a first magnetization direction. The first magnetization direction is a direction intersecting a first reference direction. The magnetization of the magnetization fixing layer of each of the second and fourth resistive sections includes a component of a second magnetization direction. The second magnetization direction is a direction intersecting a first reference direction and is opposite to the first magnetization direction. The magnetization of the free layer of each of the two resistive sections (first to fourth) includes a component of a third magnetization direction when no target magnetic field is applied to at least one magnetic sensor. The third magnetization direction is a direction intersecting a first reference direction and is orthogonal to the first magnetization direction. The magnetization of the free layer of each of the other two resistive sections (first to fourth) includes a component of a fourth magnetization direction when no target magnetic field is applied to at least one magnetic sensor. The fourth magnetization direction is a direction intersecting a first reference direction and is opposite to the third magnetization direction.

[0012] In the magnetic sensor device of the present invention, the magnetization of the free layers of the first and second resistive portions may include a component of the third magnetization direction even when no target magnetic field is applied to at least one magnetic sensor. Similarly, the magnetization of the free layers of the third and fourth resistive portions may include a component of the fourth magnetization direction even when no target magnetic field is applied to at least one magnetic sensor. Alternatively, the magnetization of the free layers of the first and fourth resistive portions may include a component of the third magnetization direction even when no target magnetic field is applied to at least one magnetic sensor. Likewise, the magnetization of the free layers of the second and third resistive portions may include a component of the fourth magnetization direction even when no target magnetic field is applied to at least one magnetic sensor.

[0013] Furthermore, in the magnetic sensor device of the present invention, the deviation of the center of gravity of the element arrangement region from the center of gravity of the reference plane in the second reference direction can be greater than the deviation of the center of gravity of the element arrangement region from the center of gravity of the reference plane in the third reference direction. The second and third reference directions can also be two directions orthogonal to the first reference direction. In this case, the angle between the first magnetization direction and the second reference direction can also be in the range of greater than 0° and less than 90°.

[0014] Furthermore, in the magnetic sensor device of the present invention, at least one magnetic sensor may also include a magnetic field generator. The magnetic field generator may also be configured to apply a magnetic field in a direction intersecting with each of the first to fourth magnetization directions to the free layer. Alternatively, the magnetic field generator may also be configured to apply a magnetic field in a third magnetization direction or a magnetic field in a fourth magnetization direction to the free layer.

[0015] Furthermore, in the magnetic sensor device of the present invention, the deviation of the center of gravity of the element arrangement region from the center of gravity of the reference plane in the second reference direction may be greater than the deviation of the center of gravity of the element arrangement region from the center of gravity of the reference plane in the third reference direction. The second reference direction and the third reference direction may also be two directions orthogonal to the first reference direction. The element arrangement region may also include: a first region for arranging at least one magnetoresistive effect element constituting a first resistive portion among a plurality of magnetoresistive effect elements; a second region for arranging at least one magnetoresistive effect element constituting a second resistive portion among a plurality of magnetoresistive effect elements; a third region for arranging at least one magnetoresistive effect element constituting a third resistive portion among a plurality of magnetoresistive effect elements; and a fourth region for arranging at least one magnetoresistive effect element constituting a fourth resistive portion among a plurality of magnetoresistive effect elements. At least two of the first to fourth regions may also be arranged along the third reference direction such that at least a portion of each of the at least two regions sandwiches a reference axis when viewed from the first reference direction. The reference axis may also be a straight line passing through the center of gravity of the reference plane and parallel to the second reference direction.

[0016] If the deviation of the center of gravity of the component configuration area from the center of gravity of the reference plane in the second reference direction is greater than the deviation of the center of gravity of the component configuration area from the center of gravity of the reference plane in the third reference direction, the second and fourth regions may also be configured along the third reference direction, sandwiching the reference axis when viewed from the first reference direction. The first region may also be configured between the second and fourth regions when viewed from the first reference direction. The third region may also be configured between the first and second regions when viewed from the first reference direction. Alternatively, in this case, the second and third regions may also be configured along the third reference direction, sandwiching the reference axis when viewed from the first reference direction. The first region may also be configured between the second and third regions when viewed from the first reference direction. The fourth region may also be configured between the first and third regions when viewed from the first reference direction.

[0017] Alternatively, in this case, the first and fourth regions can also be arranged along the third reference direction such that at least a portion of each of the first to fourth regions sandwiches the reference axis when viewed from the first reference direction. The second and third regions can also be arranged along the third reference direction such that at least a portion of each of the second and third regions sandwiches the reference axis when viewed from the first reference direction. The second and third regions can also be arranged in front of the first and fourth regions, respectively, in a direction parallel to the second reference direction. In this case, the first and second regions can also be arranged symmetrically about an imaginary line orthogonal to the reference axis when viewed from the first reference direction. The third and fourth regions can also be arranged symmetrically about an imaginary line when viewed from the first reference direction.

[0018] Furthermore, if the deviation of the center of gravity of the component configuration area from the center of gravity of the reference plane in the second reference direction is greater than the deviation of the center of gravity of the component configuration area from the center of gravity of the reference plane in the third reference direction, then at least two areas may be configured symmetrically about the reference axis when viewed from the first reference direction.

[0019] Furthermore, in this case, the center of gravity of the component configuration area can also overlap with the reference axis when viewed from the first reference direction.

[0020] Furthermore, in the magnetic sensor device of the present invention, at least one magnetic sensor may also include a single magnetic sensor. The single magnetic sensor may also be configured to detect a component of the magnetic field of an object in one direction and generate at least one detection signal corresponding to that component. In this case, the magnetic sensor device of the present invention may also further include a chip containing a single magnetic sensor. The chip may also be mounted on a reference plane.

[0021] Furthermore, in the magnetic sensor device of the present invention, at least one magnetic sensor may also include two magnetic sensors. The two magnetic sensors may also be configured to detect components of the object's magnetic field in two different directions, respectively. In this case, the magnetic sensor device of the present invention may also further include a chip comprising two magnetic sensors. The chip may also be mounted on a reference plane. Furthermore, in this case, the two directions of the object's magnetic field may also be directions inclined relative to the reference plane and a first reference direction, respectively.

[0022] Furthermore, in the magnetic sensor device of the present invention, at least one magnetic sensor may also include: a first magnetic sensor, a second magnetic sensor, and a third magnetic sensor. The first magnetic sensor may also be configured to detect a first-direction component of the object's magnetic field. The second magnetic sensor may also be configured to detect a second-direction component of the object's magnetic field. The third magnetic sensor may also be configured to detect a third-direction component of the object's magnetic field. The magnetic sensor device may also further include: a first chip including the first magnetic sensor, and a second chip including the second and third magnetic sensors. The first and second chips may also be mounted on a reference plane and arranged along a second reference direction orthogonal to the first reference direction. In this case, the first direction may also be a direction parallel to the reference plane. The second direction may also be a direction inclined relative to each of the reference plane and the first reference direction. The third direction may also be another direction inclined relative to each of the reference plane and the first reference direction.

[0023] Furthermore, the magnetic sensor system of the present invention includes: the magnetic sensor device of the present invention and a magnetic field generator for generating a predetermined magnetic field. The relative position of the magnetic field generator with respect to the magnetic sensor device can vary along a predetermined spherical surface.

[0024] The method for manufacturing the magnetic sensor device of the present invention includes: a step of forming at least one magnetic sensor, and a step of mounting at least one magnetic sensor onto a support. The step of forming at least one magnetic sensor includes a step of forming a plurality of magnetoresistive effect elements. The step of forming a plurality of magnetoresistive effect elements includes: a step of forming a plurality of initial magnetoresistive effect elements respectively contained in an initial magnetization fixing layer, a free layer, and a gap layer that subsequently become magnetization fixing layers; and a step of fixing the magnetization direction of the initial magnetization fixing layer using a laser and an external magnetic field.

[0025] In the magnetic sensor device and magnetic sensor system of the present invention, the magnetization direction of the fixed magnetization layer and the magnetization direction of the free layer of each of the plurality of magnetoresistive effect elements are defined, based on the premise that the center of gravity of the element arrangement region is deviated from the center of gravity of the reference plane. Therefore, according to the present invention, the influence of applied stress can be suppressed.

[0026] Other objects, features and advantages of the present invention will become quite clear from the following description. Attached Figure Description

[0027] Figure 1 This is a perspective view showing a schematic structure of the joint mechanism of the magnetic sensor system according to the first embodiment of the present invention.

[0028] Figure 2 It is shown Figure 1 The diagram shows a cross-sectional view of the schematic structure of the joint mechanism.

[0029] Figure 3 This is an explanatory diagram illustrating the reference coordinate system of the magnetic sensor system according to the first embodiment of the present invention.

[0030] Figure 4 This is a perspective view showing the magnetic sensor device according to the first embodiment of the present invention.

[0031] Figure 5 This is a top view showing the magnetic sensor device according to the first embodiment of the present invention.

[0032] Figure 6 This is a side view showing the magnetic sensor device according to the first embodiment of the present invention.

[0033] Figure 7 This is a functional block diagram illustrating the structure of the magnetic sensor device according to the first embodiment of the present invention.

[0034] Figure 8 This is a circuit diagram illustrating the circuit structure of the first magnetic sensor according to the first embodiment of the present invention.

[0035] Figure 9 This is a circuit diagram illustrating the circuit structure of the second magnetic sensor according to the first embodiment of the present invention.

[0036] Figure 10 This is a circuit diagram illustrating the circuit structure of the third magnetic sensor according to the first embodiment of the present invention.

[0037] Figure 11 This is a top view showing a portion of the first chip according to a first embodiment of the present invention.

[0038] Figure 12 This is a cross-sectional view showing a portion of the first chip according to a first embodiment of the present invention.

[0039] Figure 13 This is a top view showing a portion of the second chip according to a first embodiment of the present invention.

[0040] Figure 14 This is a cross-sectional view showing a portion of the second chip according to a first embodiment of the present invention.

[0041] Figure 15 This is a perspective view showing the magnetoresistive effect element according to the first embodiment of the present invention.

[0042] Figure 16 This is an explanatory diagram illustrating the configuration of the component configuration area according to the first embodiment of the present invention.

[0043] Figure 17 This is an explanatory diagram schematically showing the stress distribution within the support body of the first embodiment of the present invention.

[0044] Figure 18 This is a perspective view showing a modified example of a magnetoresistive element according to the first embodiment of the present invention.

[0045] Figure 19 This is a circuit diagram illustrating the circuit structure of the first magnetic sensor according to the second embodiment of the present invention.

[0046] Figure 20 This is a circuit diagram illustrating the circuit structure of the second magnetic sensor according to the second embodiment of the present invention.

[0047] Figure 21 This is a circuit diagram illustrating the circuit structure of the third magnetic sensor according to the second embodiment of the present invention.

[0048] Figure 22 This is an explanatory diagram illustrating the configuration of the component configuration area in the third embodiment of the present invention.

[0049] Figure 23 This is an explanatory diagram illustrating the configuration of the component configuration area according to the fourth embodiment of the present invention.

[0050] Figure 24 This is an explanatory diagram illustrating the configuration of the component configuration area according to the fifth embodiment of the present invention. Detailed Implementation

[0051] [First Implementation Method]

[0052] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, the joint mechanism 300 of the magnetic sensor system 100 according to the first embodiment of the present invention will be described. The joint mechanism 300 is a mechanism that includes a joint. Figure 1 This is a perspective view showing the general structure of the joint mechanism 300. Figure 2 This is a cross-sectional view showing the general structure of the joint mechanism 300. Figure 3 This is an explanatory diagram used to illustrate the reference coordinate system of the magnetic sensor system 100.

[0053] like Figure 1 and Figure 2 As shown, the joint mechanism 300 includes: a first component 310, a second component 320, and a magnetic sensor system 100.

[0054] The first component 310 includes a shaft portion 311 and a spherical portion 312 connected to one end of the shaft portion 311 along its long side. The spherical portion 312 has a convex surface 312a. Here, it is assumed that the imaginary sphere including the convex surface 312a is the first spherical surface. It can also be said that the convex surface 312a is formed by a portion of the first spherical surface. The portion of the first spherical surface not included in the convex surface 312a is the boundary portion between the shaft portion 311 and the spherical portion 312.

[0055] The second component 320 includes a shaft portion 321 and a receiving portion 322 connected to one end of the shaft portion 321 along its long side. The receiving portion 322 has a concave surface 322a. Here, it is assumed that the imaginary sphere including the concave surface 322a is a second sphere. It can also be said that the concave surface 322a is formed by a portion of the second sphere. The concave surface 322a can also be formed by half or nearly half of the second sphere.

[0056] The first component 310 and the second component 320 are variably connected in position with the spherical portion 312 embedded in the receiving portion 322. The radius of the second spherical surface is equal to or slightly larger than the radius of the first spherical surface. The convex surface 312a and the concave surface 322a can contact each other or be opposed by a lubricant. The center of the second spherical surface coincides with or is substantially coincident with the center of the first spherical surface. The connection between the first component 310 and the second component 320 is a joint. In particular, in this embodiment, the joint is a ball joint.

[0057] The magnetic sensor system 100 includes a magnetic sensor device 1 and a magnetic field generator 101. The relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1 can vary along a predetermined spherical surface. The magnetic sensor system 100 is a system for detecting the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1.

[0058] Magnetic field generator 101 generates a predetermined magnetic field. Magnetic field generator 101 is, for example, a magnet. Magnetic sensor device 1 generates a first detection value, a second detection value, and a third detection value that correspond to the components of the magnetic field in three mutually different directions relative to the reference position. The reference position will be described in detail later.

[0059] like Figure 1 and Figure 2 As shown, the magnetic field generator 101 is embedded in the receiving portion 322 without protruding from the concave surface 322a. The magnetic sensor device 1 is disposed inside the spherical portion 312. Hereinafter, the position of the center of the first spherical surface will be referred to as the reference position. The magnetic sensor device 1 is configured to detect the magnetic field at the reference position.

[0060] Hereinafter, the magnetic field at the reference position in the magnetic field generated by the magnetic field generator 101 will be referred to as the object magnetic field. The direction of the object magnetic field is, for example, parallel to an imaginary straight line passing through the reference position and the magnetic field generator 101. Figure 2 In the example shown, the magnetic field generator 101 is a magnet with N and S poles arranged in an imaginary straight line as described above. The S pole is closer to the reference position than the N pole. Figure 2 The multiple dashed lines with arrows shown represent magnetic field lines corresponding to the magnetic field generated by the magnetic field generator 101.

[0061] exist Figure 1 and Figure 2 The joint mechanism 300 shown has a spherical portion 312 embedded in the receiving portion 322, and the relative position of the second member 320 with respect to the first member 310 is variable. Therefore, the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1 can vary along the aforementioned defined spherical surface. In this embodiment, the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1 is set to the position of the point closest to the reference position of the magnetic field generator 101. The center of the defined spherical surface coincides with or is substantially coincident with the center of the first spherical surface. The radius of the defined spherical surface is greater than or equal to the radius of the first spherical surface. The radius of the defined spherical surface may also coincide with the radius of either the first or second spherical surface.

[0062] Here, refer to Figure 3 The reference coordinate system of this embodiment will be explained below. The reference coordinate system is a coordinate system based on the magnetic sensor device 1, and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, the X direction, Y direction, and Z direction are defined. For example... Figure 3 As shown, the X, Y, and Z directions are orthogonal to each other. Furthermore, the opposite direction of the X direction is defined as the -X direction, the opposite direction of the Y direction as the -Y direction, and the opposite direction of the Z direction as the -Z direction.

[0063] As described above, the magnetic sensor device 1 generates first, second, and third detection values ​​that correspond to the components of the magnetic field in three mutually different directions relative to the reference position. In this embodiment, specifically, the aforementioned three mutually different directions are directions parallel to the X-direction, directions parallel to the Y-direction, and directions parallel to the Z-direction. The three axes of the reference coordinate system are defined as axes parallel to the X-direction, axes parallel to the Y-direction, and axes parallel to the Z-direction.

[0064] The position of the magnetic sensor device 1 in the reference coordinate system remains unchanged. When the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1 changes, the position of the magnetic field generator 101 in the reference coordinate system changes along the aforementioned defined spherical surface. Figure 3 In the attached figures, reference numeral 102 denotes a defined sphere. The position of the magnetic field generator 101 in the reference coordinate system indicates the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1. Hereinafter, the position of the magnetic field generator 101 in the reference coordinate system will be simply referred to as the position of the magnetic field generator 101.

[0065] In the joint mechanism 300 including the magnetic sensor system 100, the relative position of the second component 320 relative to the first component 310 can be detected by detecting the relative position of the magnetic field generator 101 relative to the magnetic sensor device 1. The joint mechanism 300 can be used in robots, industrial equipment, medical devices, amusement equipment, etc.

[0066] In addition to the joint mechanism 300, the magnetic sensor system 100 can also be applied to joysticks and trackballs.

[0067] The joystick includes, for example, a stick and a support that can rock the stick. When the magnetic sensor system 100 is applied to the joystick, for example, the magnetic field generator 101 is disposed inside the support and the magnetic sensor device 1 is disposed inside the stick, such that the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1 changes along a predetermined spherical surface as the stick is rocked.

[0068] A trackball, for example, includes a ball and a support that rotatably supports the ball. When the magnetic sensor system 100 is applied to the trackball, for example, the magnetic field generator 101 is disposed inside the support and the magnetic sensor device 1 is disposed inside the ball, such that the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1 changes along a predetermined spherical surface as the ball rotates.

[0069] Next, refer to Figures 4 to 7 The structure of the magnetic sensor device 1 will be described. Figure 4 This is a perspective view showing the magnetic sensor device 1. Figure 5 This is a top view showing the magnetic sensor device 1. Figure 6 This is a side view showing the magnetic sensor device 1. Figure 7 This is a functional block diagram showing the structure of the magnetic sensor device 1.

[0070] The magnetic sensor device 1 includes at least one magnetic sensor and a support for supporting the at least one magnetic sensor. The at least one magnetic sensor comprises a plurality of magnetoresistive elements and is configured to detect the magnetic field of the object being detected. Hereinafter, the magnetoresistive elements will be referred to as MR elements.

[0071] In this embodiment, at least one magnetic sensor includes a first magnetic sensor 10, a second magnetic sensor 20, and a third magnetic sensor 30. Each of the first to third magnetic sensors 10, 20, and 30 includes a plurality of MR elements. The magnetic sensor device 1 includes a first chip 2 containing the first magnetic sensor 10 and a second chip 3 containing the second magnetic sensor 20 and the third magnetic sensor 30. Both the first and second chips 2 and 3 have a cuboid shape.

[0072] The support body 4 has a cuboid shape. The support body 4 has: a reference plane 4a as the upper surface, a lower surface 4b located on the opposite side of the reference plane 4a, and four side surfaces connecting the reference plane 4a and the lower surface 4b.

[0073] Here, refer to Figures 4 to 6 The relationship between the reference coordinate system and the structural elements of the magnetic sensor device 1 will be explained. As described above, in the reference coordinate system, the X direction, Y direction, Z direction, -X direction, -Y direction, and -Z direction are defined. The X and Y directions are parallel to the reference plane 4a of the support body 4. The Z direction is perpendicular to the reference plane 4a of the support body 4 and is the direction from the lower surface 4b of the support body 4 toward the reference plane 4a. Hereinafter, the position in front of the reference in the Z direction will be called "above", and the position opposite to "above" relative to the reference will be called "below". Furthermore, regarding the structural elements of the magnetic sensor device 1, the surface located at the Z direction end will be called the "upper surface", and the surface located at the -Z direction end will be called the "lower surface".

[0074] Furthermore, the direction perpendicular to the reference plane 4a (the direction parallel to the Z direction) is referred to as the first reference direction. Additionally, the two directions orthogonal to the first reference direction are referred to as the second reference direction and the third reference direction. In this embodiment, the direction parallel to the Y direction is used as the second reference direction. Furthermore, the direction parallel to the X direction is used as the third reference direction. Hereinafter, the first reference direction will be labeled with reference numeral Rz, the second reference direction with reference numeral Ry, and the third reference direction with reference numeral Rx.

[0075] The first chip 2 has an upper surface 2a and a lower surface 2b located on opposite sides, and four side surfaces connecting the upper surface 2a and the lower surface 2b. The second chip 3 has an upper surface 3a and a lower surface 3b located on opposite sides, and four side surfaces connecting the upper surface 3a and the lower surface 3b.

[0076] The first chip 2 is mounted on the reference plane 4a with its lower surface 2b facing the reference plane 4a of the support 4. The second chip 3 is also mounted on the reference plane 4a with its lower surface 3b facing the reference plane 4a of the support 4. The first chip 2 and the second chip 3 are respectively bonded to the support 4 by adhesives 6 and 7, for example.

[0077] The first chip 2 has multiple first pads (electrode pads) 21 disposed on its upper surface 2a. The second chip 3 has multiple second pads (electrode pads) 31 disposed on its upper surface 3a. The support 4 has multiple third pads (electrode pads) 41 disposed on a reference plane 4a. Although not shown, in the magnetic sensor device 1, two corresponding pads of the multiple first pads 21, multiple second pads 31, and multiple third pads 41 are interconnected by bonding wires.

[0078] The support body 4 includes a processor 40 for processing multiple detection signals generated by the first to third magnetic sensors 10, 20, and 30. The processor 40 is, for example, constructed from an application-specific integrated circuit (ASIC). The first to third magnetic sensors 10, 20, and 30 are connected to the processor 40 via pads 21, 31, and 41 and multiple bonding wires.

[0079] Here, the dimension perpendicular to the reference plane 4a is referred to as the thickness. For example... Figure 6 As shown, the thickness of the first chip 2 is the same as the thickness of the second chip 3. Furthermore, the thickness of the support 4 is greater than the thickness of the first chip 2 and the thickness of the second chip 3.

[0080] Next, refer to Figures 8 to 14 The structure of the first to third magnetic sensors 10, 20 and 30 is described. Figure 8 This is a circuit diagram showing the circuit structure of the first magnetic sensor 10. Figure 9 This is a circuit diagram showing the circuit structure of the second magnetic sensor 20. Figure 10 This is a circuit diagram showing the circuit structure of the third magnetic sensor 30. Figure 11 This is a top view showing a portion of the first chip 2. Figure 12 This is a cross-sectional view showing a portion of the first chip 2. Figure 13 This is a top view showing a portion of the second chip 3. Figure 14 This is a cross-sectional view showing a portion of the second chip 3.

[0081] Here, the first direction, the second direction, and the third direction are defined as follows: The first direction is parallel to the reference plane 4a. The second direction is inclined relative to both the reference plane 4a and the first reference direction Rz. The third direction is another direction inclined relative to both the reference plane 4a and the first reference direction Rz. The second direction is orthogonal to the first direction. The third direction is also orthogonal to the first direction.

[0082] In addition, such as Figure 11 and Figure 13As shown, the U direction and V direction are defined as follows. The U direction is the direction of rotation from the X direction toward the -Y direction. The V direction is the direction of rotation from the Y direction toward the X direction. In this embodiment, specifically, the U direction is defined as the direction rotated by α from the X direction toward the -Y direction, and the V direction is defined as the direction rotated by α from the Y direction toward the X direction. Furthermore, α is an angle greater than 0° and less than 90°. Additionally, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0083] In addition, such as Figure 14 As shown, the W1 and W2 directions are defined as follows. The W1 direction is the direction of rotation from the V direction toward the -Z direction. The W2 direction is the direction of rotation from the V direction toward the Z direction. In this embodiment, specifically, the W1 direction is defined as the direction rotated by β from the V direction toward the -Z direction, and the W2 direction is defined as the direction rotated by β from the V direction toward the Z direction. Furthermore, β is an angle greater than 0° and less than 90°. Additionally, the direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. The W1 and W2 directions are both orthogonal to the U direction.

[0084] In this embodiment, the first direction is parallel to the U direction. The second direction is parallel to the W1 direction. The third direction is parallel to the W2 direction.

[0085] The first magnetic sensor 10 is configured to detect a first component of the object's magnetic field and generate at least one first detection signal corresponding to the first component. The first component is the component of the object's magnetic field in a first direction (parallel to the U direction).

[0086] The second magnetic sensor 20 is configured to detect a second component of the object's magnetic field and generate at least one second detection signal corresponding to the second component. The second component is the component of the object's magnetic field in a second direction (parallel to the W1 direction).

[0087] The third magnetic sensor 30 is configured to detect the third component of the object's magnetic field and generate at least one third detection signal corresponding to the third component. The third component is the third-direction component of the object's magnetic field (parallel to the W2 direction).

[0088] like Figure 8As shown, the first magnetic sensor 10 includes: a power supply terminal V1, a ground terminal G1, signal output terminals E11 and E12, a first resistive section R11, a second resistive section R12, a third resistive section R13, and a fourth resistive section R14. Multiple MR elements of the first magnetic sensor 10 constitute the first to fourth resistive sections R11, R12, R13, and R14. The first and second resistive sections R11 and R12 are connected along the path that electrically connects the first connection point P11 and the second connection point P12, i.e., the first path (…). Figure 8 The left-hand path in the diagram) is connected in series. The third and fourth resistors R13 and R14 are connected in series along the path that electrically connects the first connection point P11 and the second connection point P12, i.e., the second path ( Figure 8 (The path on the right side of the text) is connected in series.

[0089] The first and fourth resistor sections R11 and R14 are connected to the first connection point P11. The second and third resistor sections R12 and R13 are connected to the second connection point P12. The first connection point P11 is connected to the power supply terminal V1. The second connection point P12 is connected to the ground terminal G1. The connection point between the first resistor section R11 and the second resistor section R12 is connected to the signal output terminal E11. The connection point between the third resistor section R13 and the fourth resistor section R14 is connected to the signal output terminal E12.

[0090] like Figure 9 As shown, the second magnetic sensor 20 includes: a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the second magnetic sensor 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0091] The circuit structure of the second magnetic sensor 20 is basically the same as that of the first magnetic sensor 10. If the power supply terminal V1, ground terminal G1, signal output terminals E11, E12, resistors R11, R12, R13, R14, and connection points P11, P12 in the description of the circuit structure of the first magnetic sensor 10 are replaced with the power supply terminal V2, ground terminal G2, signal output terminals E21, E22, resistors R21, R22, R23, R24, and connection points P21, P22, then the circuit structure of the second magnetic sensor 20 is described.

[0092] like Figure 10 As shown, the third magnetic sensor 30 includes: a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The multiple MR elements of the third magnetic sensor 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0093] The circuit structure of the third magnetic sensor 30 is basically the same as that of the first magnetic sensor 10. If the power supply terminal V1, ground terminal G1, signal output terminals E11, E12, resistors R11, R12, R13, R14 and connection points P11, P12 in the description of the circuit structure of the first magnetic sensor 10 are replaced with the power supply terminal V3, ground terminal G3, signal output terminals E31, E32, resistors R31, R32, R33, R34 and connection points P31, P32, respectively, then the circuit structure of the third magnetic sensor 30 is described.

[0094] Hereinafter, the plurality of MR elements of the first magnetic sensor 10 will be referred to as a plurality of first MR elements 50A, the plurality of MR elements of the second magnetic sensor 20 will be referred to as a plurality of second MR elements 50B, and the plurality of MR elements of the third magnetic sensor 30 will be referred to as a plurality of third MR elements 50C. Furthermore, any MR element will be labeled with reference numeral 50.

[0095] Figure 15 This is a perspective view of the MR element 50. The MR element 50 is a spin-valve type MR element. The MR element 50 includes: a magnetized fixed layer 52 with a fixed orientation, a free layer 54 with a magnetized orientation that can change according to the direction of an external magnetic field, and a gap layer 53 disposed between the magnetized fixed layer 52 and the free layer 54. The MR element 50 can also be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle formed by the magnetization direction of the free layer 54 relative to the magnetization direction of the magnetized fixed layer 52. The resistance value is at its minimum when the angle is 0° and at its maximum when the angle is 180°. In each MR element 50, the free layer 54 has an anisotropic shape with its easy magnetization axis orthogonal to the magnetization direction of the magnetized fixed layer 52. In addition, as a method for setting a predefined direction of the easily magnetized axis in the free layer 54, a magnet that applies a bias magnetic field to the free layer 54 can be used.

[0096] The MR element 50 also has an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization fixation layer 52, the gap layer 53, and the free layer 54 are stacked sequentially. The antiferromagnetic layer 51 is made of an antiferromagnetic material and generates exchange coupling with the magnetization fixation layer 52, fixing the magnetization direction of the magnetization fixation layer 52. Alternatively, the magnetization fixation layer 52 can also be a so-called self-pinned fixation layer (SFP layer). A self-pinned fixation layer has a stacked iron structure consisting of a stacked ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer, and the two ferromagnetic layers are antiferromagnetically coupled. When the magnetization fixation layer 52 is a self-pinned fixation layer, the antiferromagnetic layer 51 can be omitted.

[0097] Furthermore, the arrangement of layers 51-54 of the MR element 50 can also be consistent with... Figure 15 The configuration shown is reversed from top to bottom.

[0098] exist Figures 8 to 10 In the diagram, solid arrows indicate the direction of magnetization of the magnetized fixed layer 52 of the MR element 50. Hollow arrows indicate the direction of magnetization of the free layer 54 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0099] Here, the first magnetization direction, second magnetization direction, third magnetization direction, and fourth magnetization direction are defined as follows: The first magnetization direction is a direction that intersects the first reference direction Rz. The second magnetization direction is a direction that intersects the first reference direction Rz and is opposite to the first magnetization direction. The third magnetization direction is a direction that intersects the first reference direction Rz and is orthogonal to the first magnetization direction. The fourth magnetization direction is a direction that intersects the first reference direction Rz and is opposite to the third magnetization direction.

[0100] In this embodiment, the first magnetization direction intersects the second reference direction Ry. The angle between the first magnetization direction and the second reference direction Ry can also be greater than 0° and less than 90°.

[0101] In the first magnetic sensor 10, the first magnetization direction is the U direction, the second magnetization direction is the -U direction, the third magnetization direction is the V direction, and the fourth magnetization direction is the -V direction. Figure 8 In the example shown, the magnetization of the magnetization fixing layer 52 of the first and third resistors R11 and R13 includes a component in the first magnetization direction (U direction). The magnetization of the magnetization fixing layer 52 of the second and fourth resistors R12 and R14 includes a component in the second magnetization direction (-U direction).

[0102] The magnetization of the free layer 54 of each of the two resistor sections R11, R12, R13, and R14, when no target magnetic field is applied to the first magnetic sensor 10, includes a component in the third magnetization direction (V direction). The magnetization of the free layer 54 of the other two resistor sections R11, R12, R13, and R14, when no target magnetic field is applied to the first magnetic sensor 10, includes a component in the fourth magnetization direction (-V direction). Figure 8 In the example shown, the magnetization of the free layers 54 of the first and second resistors R11 and R12, in the above case, includes a component in the third magnetization direction (V direction). The magnetization of the magnetization fixing layers 52 of the third and fourth resistors R13 and R14, in the above case, includes a component in the fourth magnetization direction (-V direction).

[0103] Furthermore, when the magnetization of the magnetization fixing layer 52 includes a component with a specific magnetization direction, this component with the specific magnetization direction may also be the principal component of the magnetization of the magnetization fixing layer 52. Alternatively, the magnetization of the magnetization fixing layer 52 may not include a component in a direction orthogonal to the specific magnetization direction. In this embodiment, when the magnetization of the magnetization fixing layer 52 includes a component with a specific magnetization direction, the direction of the magnetization of the magnetization fixing layer 52 becomes a specific magnetization direction or a substantially specific magnetization direction.

[0104] Similarly, if the magnetization of the free layer 54 without applying an object magnetic field includes a component of a specific magnetization direction, that component of the specific magnetization direction may also be the principal component of the magnetization of the free layer 54. Alternatively, the magnetization of the free layer 54 in the above-described case may not include a component of a direction orthogonal to the specific magnetization direction. In this embodiment, when the magnetization of the free layer 54 in the above-described case includes a component of a specific magnetization direction, the direction of the magnetization of the free layer 54 in the above-described case becomes a specific magnetization direction or a substantially specific magnetization direction.

[0105] The first magnetic sensor 10 is configured such that, without applying an object magnetic field to the first magnetic sensor 10, the magnetization of the free layer 54 is in the aforementioned direction. Specifically, the free layer 54 of each of the plurality of first MR elements 50A of the first magnetic sensor 10 has a shape anisotropy in which the easy magnetization axis is parallel to the third magnetization direction (V direction). Furthermore, the direction parallel to the third magnetization direction (V direction) is also parallel to the fourth magnetization direction (-V direction).

[0106] Furthermore, the first magnetic sensor 10 includes a magnetic field generator configured to apply magnetic fields to the free layer 54 in directions intersecting the first to fourth magnetization directions. In this embodiment, the magnetic field generator includes a coil. The specific direction of the magnetic field generated by the coil will be explained later.

[0107] In the second magnetic sensor 20, the first magnetization direction is the W1 direction, the second magnetization direction is the -W1 direction, the third magnetization direction is the U direction, and the fourth magnetization direction is the -U direction. If we replace the first magnetic sensor 10, resistors R11, R12, R13, R14, U direction, -U direction, V direction, and -V direction in the description of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 of the first magnetic sensor 10 with the second magnetic sensor 20, resistors R21, R22, R23, R24, W1 direction, -W1 direction, U direction, and -U direction, respectively, then this becomes the description of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 of the second magnetic sensor 20.

[0108] In the third magnetic sensor 30, the first magnetization direction is the W2 direction, the second magnetization direction is the -W2 direction, the third magnetization direction is the U direction, and the fourth magnetization direction is the -U direction. If we replace the first magnetic sensor 10, resistors R11, R12, R13, R14, U direction, -U direction, V direction, and -V direction in the description of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 of the first magnetic sensor 10 with the third magnetic sensor 30, resistors R31, R32, R33, R34, W2 direction, -W2 direction, U direction, and -U direction, respectively, then we get the description of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 of the third magnetic sensor 30.

[0109] like Figure 11 and Figure 12 As shown, the first chip 2 includes: a substrate 22, insulating layers 23, 24, 25, 26, 27, 28, and 65A, multiple lower electrodes 61A, multiple upper electrodes 62A, multiple lower coil elements 63A, and multiple upper coil elements 64A. Furthermore, each coil element is part of a coil winding. The insulating layer 23 is disposed on the substrate 22. Multiple lower coil elements 63A are disposed on the insulating layer 23. An insulating layer 65A is disposed on the insulating layer 23 surrounding the multiple lower coil elements 63A. An insulating layer 24 is disposed on the multiple lower coil elements 63A and the insulating layer 65A. Multiple lower electrodes 61A are disposed on the insulating layer 24. An insulating layer 25 is disposed on the insulating layer 24 surrounding the multiple lower electrodes 61A.

[0110] Multiple first MR elements 50A are disposed on multiple lower electrodes 61A. An insulating layer 26 is disposed around the multiple first MR elements 50A on the multiple lower electrodes 61A and the insulating layer 25. Multiple upper electrodes 62A are disposed on the multiple first MR elements 50A and the insulating layer 26. An insulating layer 27 is disposed around the multiple upper electrodes 62A on the insulating layer 26. An insulating layer 28 is disposed on the multiple upper electrodes 62A and the insulating layer 27. Multiple upper coil elements 64A are disposed on the insulating layer 28. The first chip 2 may also further include an insulating layer (not shown) covering the multiple upper coil elements 64A and the insulating layer 28. Additionally, in Figure 11 In the figure, multiple lower electrodes 61A, multiple upper electrodes 62A, multiple lower coil elements 63A, and insulating layers 23-28 and 65A are omitted.

[0111] The first chip 2 is mounted on the reference plane 4a of the support 4 (refer to...) Figures 4 to 6 In this state, the upper surface of the substrate 22 is parallel to the reference plane 4a. In this state, the upper surfaces of each of the plurality of lower electrodes 61A are also parallel to the reference plane 4a. Therefore, in this state, it can be said that the plurality of first MR elements 50A are arranged on a plane parallel to the reference plane 4a.

[0112] like Figure 11 As shown, a plurality of first MR elements 50A are arranged in multiples in both the U and V directions. A plurality of upper coil elements 64A extend in directions parallel to the Y direction. Furthermore, the plurality of upper coil elements 64A are arranged in the X direction. When viewed from the first reference direction Rz, two upper coil elements 64A overlap in each of the plurality of first MR elements 50A. Although not shown, the shape and arrangement of the plurality of lower coil elements 63A may be the same as or different from the shape and arrangement of the plurality of upper coil elements 64A.

[0113] exist Figure 11 and Figure 12 In the example shown, multiple lower coil elements 63A and multiple upper coil elements 64A are electrically connected in such a way that they form coils that apply magnetic fields in the X direction and -X direction to the free layers 54 of multiple first MR elements 50A. Furthermore, this coil is configured to apply an X-direction magnetic field to one of the free layers 54 of the first and second resistors R11 and R12, and to the free layers 54 of the third and fourth resistors R13 and R14, and to the other free layer 54, applying a -X direction magnetic field.

[0114] The direction of the magnetic field generated by the coil and the magnetic field applied to the free layer 54 intersects the first to fourth magnetization directions (U direction, -U direction, V direction, and -V direction) of the first magnetic sensor 10, respectively. Figure 11 and Figure 12 In the example shown, in particular, the direction of the magnetic field applied to the free layer 54 is tilted by 45° relative to the direction parallel to the first magnetization direction (U direction) and the direction parallel to the third magnetization direction (V direction), respectively.

[0115] Each lower electrode 61A has an elongated shape. A gap is formed between two adjacent lower electrodes 61A along their long sides. First MR elements 50A are disposed near both ends of the upper surface of the lower electrode 61A along its long side. Furthermore, each upper electrode 62A has an elongated shape, electrically connecting the two first MR elements 50A disposed adjacent to each other on the two lower electrodes 61A along their long sides.

[0116] like Figure 13 and Figure 14 As shown, the second chip 3 includes: a substrate 32, insulating layers 33, 34, 35, 36, 37, 38, 39, and 65B, multiple lower electrodes 61B, multiple lower electrodes 61C, multiple upper electrodes 62B, multiple upper electrodes 62C, multiple lower coil elements 63B, and multiple upper coil elements 64B. The insulating layer 33 is disposed on the substrate 32. The multiple lower coil elements 63B are disposed on the insulating layer 33. The insulating layer 65B is disposed on the insulating layer 33, surrounding the multiple lower coil elements 63B. The insulating layer 34 is disposed on the multiple lower coil elements 63B and the insulating layer 65B. The insulating layer 35 is disposed on the insulating layer 34. The multiple lower electrodes 61B and multiple lower electrodes 61C are disposed on the insulating layer 35. The insulating layer 36 is disposed on the insulating layer 35, surrounding the multiple lower electrodes 61B and multiple lower electrodes 61C.

[0117] Multiple second MR elements 50B are disposed on multiple lower electrodes 61B. Multiple third MR elements 50C are disposed on multiple lower electrodes 61C. An insulating layer 37 is disposed on the multiple lower electrodes 61B, multiple lower electrodes 61C, and insulating layer 36, surrounding the multiple second MR elements 50B and multiple third MR elements 50C. Multiple upper electrodes 62B are disposed on the multiple second MR elements 50B and insulating layer 37. Multiple upper electrodes 62C are disposed on the multiple third MR elements 50C and insulating layer 37. An insulating layer 38 is disposed on insulating layer 37, surrounding the multiple upper electrodes 62B and multiple upper electrodes 62C. An insulating layer 39 is disposed on the multiple upper electrodes 62B, multiple upper electrodes 62C, and insulating layer 38. Multiple upper coil elements 64B are disposed on insulating layer 39. The second chip 3 may also further include an insulating layer (not shown) covering the multiple upper coil elements 64B and insulating layer 39. Additionally, in Figure 13 In the figure, multiple lower electrodes 61B, multiple lower electrodes 61C, multiple upper electrodes 62B, multiple upper electrodes 62C, multiple lower coil elements 63B, and insulating layers 33 to 39 are omitted.

[0118] The second chip 3 is mounted on the reference plane 4a of the support 4 (refer to...) Figures 4 to 6 In this configuration, the upper surface of the substrate 32 is parallel to the reference plane 4a. The insulating layer 35 has a plurality of grooves 35c. Each of the grooves 35c has an inclined surface 35a and an inclined surface 35b that are inclined relative to the upper surface of the substrate 32. A plurality of lower electrodes 61B are disposed on the inclined surface 35a of each of the grooves 35c. A plurality of lower electrodes 61C are disposed on the inclined surface 35b of each of the grooves 35c. In this configuration, the upper surfaces of each of the lower electrodes 61B and each of the lower electrodes 61C are also inclined relative to the reference plane 4a. Therefore, it can be said that in this configuration, a plurality of second MR elements 50B and a plurality of third MR elements 50C are disposed on the inclined surfaces that are inclined relative to the reference plane 4a.

[0119] like Figure 13 As shown, a plurality of second MR elements 50B are arranged in a manner that multiples are arranged in both the U and V directions. Similarly, a plurality of third MR elements 50C are arranged in a manner that multiples are arranged in both the U and V directions. In this embodiment, the plurality of second MR elements 50B and the plurality of third MR elements 50C are arranged alternately in the V direction.

[0120] Multiple upper coil elements 64B extend in directions parallel to the Y direction. Furthermore, the multiple upper coil elements 64B are arranged in a manner aligned in the X direction. When viewed from the first reference direction Rz, two upper coil elements 64B overlap in each of the multiple second MR elements 50B and the multiple third MR elements 50C. Although not shown, the shape and arrangement of the multiple lower coil elements 63B may be the same as or different from the shape and arrangement of the multiple upper coil elements 64B.

[0121] exist Figure 13 and Figure 14 In the example shown, multiple lower coil elements 63B and multiple upper coil elements 64B are electrically connected to form coils that apply X-direction magnetic fields and -X-direction magnetic fields to the free layers 54 of each of the multiple second MR elements 50B and the multiple third MR elements 50C. Furthermore, this coil is configured to apply an X-direction magnetic field to one of the free layers 54 of each of the first and second resistive portions R21, R22 of the second magnetic sensor 20 and the first and second resistive portions R31, R32 of the third magnetic sensor 30, and the third and fourth resistive portions R23, R24 of the second magnetic sensor 20 and the third and fourth resistive portions R33, R34 of the third magnetic sensor 30, and to the other free layer 54, while applying a -X-direction magnetic field.

[0122] The direction of the magnetic field generated by the coil and the magnetic field applied to the free layer 54 of the second magnetic sensor 20 intersects the first to fourth magnetization directions (W1 direction, -W1 direction, U direction, and -U direction) of the second magnetic sensor 20, respectively. Figure 13 and Figure 14 In the example shown, in particular, the direction of the magnetic field applied to the free layer 54 of the second magnetic sensor 20 is tilted by 45° relative to the direction parallel to the first magnetization direction (W1 direction) and the direction parallel to the third magnetization direction (U direction) of the second magnetic sensor 20.

[0123] Similarly, the direction of the magnetic field generated by the coil and the magnetic field applied to the free layer 54 of the third magnetic sensor 30 intersects the first to fourth magnetization directions (W2 direction, -W2 direction, U direction, and -U direction) of the third magnetic sensor 30, respectively. Figure 13 and Figure 14 In the example shown, in particular, the direction of the magnetic field applied to the free layer 54 of the third magnetic sensor 30 is tilted by 45° relative to the direction parallel to the first magnetization direction (W2 direction) of the third magnetic sensor 30 and the direction parallel to the third magnetization direction (U direction), respectively.

[0124] Each lower electrode 61B has an elongated shape. A gap is formed between two adjacent lower electrodes 61B along their long sides. Second MR elements 50B are disposed near both ends of the upper surface of the lower electrode 61B along its long side. Furthermore, each upper electrode 62B has an elongated shape, electrically connecting the two second MR elements 50B disposed adjacent to each other on the two lower electrodes 61B along their long sides.

[0125] Each lower electrode 61C has an elongated shape. A gap is formed between two adjacent lower electrodes 61C along their long sides. Third MR elements 50C are disposed near both ends of the upper surface of the lower electrode 61C along its long side. Furthermore, each upper electrode 62C has an elongated shape, electrically connecting the two third MR elements 50C disposed adjacent to each other on the two lower electrodes 61C along their long sides.

[0126] Next, refer to Figures 8 to 10 The first to third detection signals will be explained. When the intensity of the first component (parallel to the U direction) of the object's magnetic field changes, the resistance values ​​of the resistive sections R11 to R14 of the first magnetic sensor 10 change in such a way that the resistance values ​​of resistive sections R11 and R13 increase while the resistance values ​​of resistive sections R12 and R14 decrease, or the resistance values ​​of resistive sections R11 and R13 decrease while the resistance values ​​of resistive sections R12 and R14 increase. As a result, the potentials of the signal output terminals E11 and E12 change. The first magnetic sensor 10 generates a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11, and generates a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12.

[0127] When the intensity of the second component (parallel to the W1 direction) of the object's magnetic field changes, the resistance values ​​of the resistive sections R21 to R24 of the second magnetic sensor 20 change in such a way that the resistance values ​​of resistive sections R21 and R23 increase while the resistance values ​​of resistive sections R22 and R24 decrease, or the resistance values ​​of resistive sections R21 and R23 decrease while the resistance values ​​of resistive sections R22 and R24 increase. This causes a change in the potentials of the signal output terminals E21 and E22. The second magnetic sensor 20 generates a second detection signal S21 corresponding to the potential of the signal output terminal E21, and generates a second detection signal S22 corresponding to the potential of the signal output terminal E22.

[0128] When the intensity of the third component (parallel to the W2 direction) of the object's magnetic field changes, the resistance values ​​of the resistive sections R31 to R34 of the third magnetic sensor 30 change in such a way that the resistance values ​​of resistive sections R31 and R33 increase while the resistance values ​​of resistive sections R32 and R34 decrease, or the resistance values ​​of resistive sections R31 and R33 decrease while the resistance values ​​of resistive sections R32 and R34 increase. This causes a change in the potentials of the signal output terminals E31 and E32. The third magnetic sensor 30 generates a third detection signal S31 corresponding to the potential of the signal output terminal E31, and generates a third detection signal S32 corresponding to the potential of the signal output terminal E32.

[0129] Next, the operation of processor 40 will be described. Processor 40 generates a first detection value Su corresponding to the first component of the object's magnetic field (the component parallel to the U direction) based on the first detection signals S11 and S12. In this embodiment, processor 40 generates the first detection value Su by performing an operation that includes calculating the difference S11-S12 between the first detection signals S11 and S12. The first detection value Su can be the difference S11-S12 itself, or it can be a value that has been modified by adding specified adjustments such as gain and offset to the difference S11-S12.

[0130] Furthermore, the processor 40 generates a second detection value and a third detection value based on the second detection signals S21 and S22 and the third detection signals S31 and S32. The second detection value is the detection value of the component of the object's magnetic field corresponding to the direction parallel to the reference plane 4a and orthogonal to the first direction (the direction parallel to the U direction). In this embodiment, the processor 40 generates a detection value as the second detection value corresponding to the component of the direction parallel to the V direction of the object's magnetic field. Furthermore, the third detection value is the detection value of the component of the object's magnetic field corresponding to the direction perpendicular to the reference plane 4a, i.e., the component parallel to the Z direction. Hereinafter, the second detection value will be represented by the notation Sv, and the third detection value will be represented by the notation Sz.

[0131] Processor 40 generates the second and third detection values ​​Sv and Sz as follows. First, processor 40 generates value S2 by an operation involving calculating the difference S21-S22 between the second detection signal S21 and the second detection signal S22, and generates value S3 by an operation involving calculating the difference S31-S32 between the third detection signal S31 and the third detection signal S32. Then, processor 40 calculates values ​​S3 and S4 using equations (1) and (2) below.

[0132] S3=(S2+S1) / cosα (1)

[0133] S4=(S2-S1) / sinα (2)

[0134] The second detection value Sv can be the value S3 itself, or it can be a value of S3 with specified corrections such as gain adjustment and offset adjustment. Similarly, the third detection value Sz can be the value S4 itself, or it can be a value of S4 with specified corrections such as gain adjustment and offset adjustment.

[0135] As described above, the U direction is a direction rotated by α from the X direction toward the -Y direction. Therefore, the first detection value Su and the component in the direction parallel to the X direction of the object's magnetic field also have a corresponding relationship. Furthermore, the V direction is a direction rotated by α from the Y direction toward the X direction. Therefore, the second detection value Sv and the component in the direction parallel to the Y direction of the object's magnetic field also have a corresponding relationship. Additionally, the processor 40 can also generate a detection value corresponding to the component in the direction parallel to the X direction of the object's magnetic field based on the first detection signals S11, S12 or the first detection value Su. Similarly, the processor 40 can also generate a detection value corresponding to the component in the direction parallel to the Y direction of the object's magnetic field based on the second detection signals S21, S22 and the third detection signals S31, S32 or the second detection value Sv.

[0136] Next, refer to Figure 16 The structural features of the magnetic sensor device 1 will be described. Figure 16 This is an explanatory diagram used to illustrate the configuration of the component placement area.

[0137] First, the features of the first magnetic sensor 10 will be described. The first magnetic sensor 10 includes an element configuration region for configuring a plurality of first MR elements 50A. Hereinafter, the element configuration region for configuring the plurality of first MR elements 50A will also be referred to as the element configuration region of the first magnetic sensor 10. In this embodiment, the first magnetic sensor 10 is included in the first chip 2. Therefore, the element configuration region of the first magnetic sensor 10 is also included in the first chip 2. The element configuration region of the first magnetic sensor 10 may exist inside the first chip 2 or on the surface of the first chip 2. In this embodiment, a portion or all of the upper surface 2a of the first chip 2 is the element configuration region of the first magnetic sensor 10. Hereinafter, the case where the entire upper surface 2a of the first chip 2 is the element configuration region of the first magnetic sensor 10 will be described as an example.

[0138] exist Figure 16 In the attached drawing, the point labeled C2 indicates the center of gravity of the upper surface 2a of the first chip 2, i.e., the component configuration area of ​​the first magnetic sensor 10, when viewed from the first reference direction Rz. Furthermore, the point labeled C4 indicates the center of gravity of the reference plane 4a of the support 4 when viewed from the first reference direction Rz. Figure 16As shown, when viewed from the first reference direction Rz, the center of gravity C2 of the element configuration area of ​​the first magnetic sensor 10 deviates from the center of gravity C4 of the reference plane 4a. In this embodiment, the deviation of the center of gravity C2 from the center of gravity C4 in the second reference direction Ry is greater than the deviation of the center of gravity C2 from the center of gravity C4 in the third reference direction Rx.

[0139] In addition, Figure 16 In the diagram, the line marked Ra represents a line passing through the centroid C4 and parallel to the second reference direction Ry. Hereinafter, this line will be referred to as the reference axis Ra. In this embodiment, the centroid C2 overlaps with the reference axis Ra when viewed from the first reference direction Rz.

[0140] The element configuration area of ​​the first magnetic sensor 10 includes: a first region A21, a second region A22, a third region A23, and a fourth region A24. The first region A21 is used to configure at least one of the plurality of first MR elements 50A that constitutes the first resistive section R11. The second region A22 is used to configure at least one of the plurality of first MR elements 50A that constitutes the second resistive section R12. The third region A23 is used to configure at least one of the plurality of first MR elements 50A that constitutes the third resistive section R13. The fourth region A24 is used to configure at least one of the plurality of first MR elements 50A that constitutes the fourth resistive section R14.

[0141] At least two of the first to fourth regions A21, A22, A23, and A24 are arranged along the third reference direction Rx such that at least a portion of each of the at least two regions sandwiches the reference axis Ra when viewed from the first reference direction Rz. In this embodiment, the second region A22 and the fourth region A24 are arranged along the third reference direction Rx such that the reference axis Ra is sandwiched when viewed from the first reference direction Rz. The first region A21 is disposed between the second region A22 and the fourth region A24 when viewed from the first reference direction Rz. The third region A23 is disposed between the first region A21 and the second region A22 when viewed from the first reference direction Rz. Figure 16 In the example shown, the first region A21 and the third region A23 are also configured along the third reference direction Rx such that they sandwich the reference axis Ra when viewed from the first reference direction Rz.

[0142] In this embodiment, the second region A22 and the fourth region A24 are symmetrically arranged about the reference axis Ra when viewed from the first reference direction Rz. Furthermore, the first region A21 and the third region A23 are symmetrically arranged about the reference axis Ra when viewed from the first reference direction Rz.

[0143] Furthermore, if the entire upper surface 2a of the first chip 2 is the component configuration area of ​​the first magnetic sensor 10, the component configuration area may also include an area for configuring a plurality of first pads 21. Additionally, if a portion of the upper surface 2a of the first chip 2 is the component configuration area of ​​the first magnetic sensor 10, the component configuration area may or may not include an area for configuring a plurality of first pads 21.

[0144] Next, the features of the second and third magnetic sensors 20 and 30 will be described. The second magnetic sensor 20 includes an element configuration region for configuring a plurality of second MR elements 50B. Furthermore, the third magnetic sensor 30 includes an element configuration region for configuring a plurality of third MR elements 50C. In this embodiment, the second and third magnetic sensors 20 and 30 are included in the second chip 3. Therefore, the element configuration region for configuring the plurality of second MR elements 50B and the element configuration region for configuring the plurality of third MR elements 50C are also included in the second chip 3. In this embodiment, a common element configuration region is used as the element configuration region for configuring the plurality of second MR elements 50B and the element configuration region for configuring the plurality of third MR elements 50C. Hereinafter, this common element configuration region will also be referred to as the element configuration region of the second and third magnetic sensors 20 and 30.

[0145] The component configuration areas of the second and third magnetic sensors 20 and 30 may exist inside the second chip 3 or on the surface of the second chip 3. In this embodiment, a portion or all of the upper surface 3a of the second chip 3 is the component configuration area of ​​the second and third magnetic sensors 20 and 30. Hereinafter, the case in which the entire upper surface 3a of the second chip 3 is the component configuration area of ​​the second and third magnetic sensors 20 and 30 will be described as an example.

[0146] exist Figure 16 In the attached drawing, point C3 indicates the centroid of the component configuration area of ​​the upper surface 3a of the second chip 3, i.e., the area of ​​the second and third magnetic sensors 20 and 30, when viewed from the first reference direction Rz. For example... Figure 16 As shown, when viewed from the first reference direction Rz, the centroid C3 of the element configuration region of the second and third magnetic sensors 20 and 30 deviates from the centroid C4 of the reference plane 4a. In this embodiment, the deviation of the centroid C3 from the centroid C4 in the second reference direction Ry is greater than the deviation of the centroid C3 from the centroid C4 in the third reference direction Rx. Furthermore, in this embodiment, the centroid C3 overlaps with the reference axis Ra when viewed from the first reference direction Rz.

[0147] The component configuration area for configuring a plurality of second MR elements 50B includes a first region, a second region, a third region, and a fourth region. The first region is for configuring at least one second MR element 50B that constitutes the first resistive section R21. The second region is for configuring at least one second MR element 50B that constitutes the second resistive section R22. The third region is for configuring at least one second MR element 50B that constitutes the third resistive section R23. The fourth region is for configuring at least one second MR element 50B that constitutes the fourth resistive section R24.

[0148] The component configuration area for configuring a plurality of third MR elements 50C includes a first region, a second region, a third region, and a fourth region. The first region is for configuring at least one third MR element 50C that constitutes the first resistive section R31. The second region is for configuring at least one third MR element 50C that constitutes the second resistive section R32. The third region is for configuring at least one third MR element 50C that constitutes the third resistive section R33. The fourth region is for configuring at least one third MR element 50C that constitutes the fourth resistive section R34.

[0149] In this embodiment, a common region is used as the first region for configuring a plurality of second MR elements 50B and the first region for configuring a plurality of third MR elements 50C. Hereinafter, this common region will be referred to as the first region A31.

[0150] Similarly, in this embodiment, a common region is used as the second region for configuring the component arrangement area for configuring the plurality of second MR elements 50B and the second region for configuring the component arrangement area for configuring the plurality of third MR elements 50C. Hereinafter, this common region will be referred to as the second region A32.

[0151] Similarly, in this embodiment, a common region is used as the third region for configuring the component configuration area for configuring the plurality of second MR elements 50B and the third region for configuring the component configuration area for configuring the plurality of third MR elements 50C. Hereinafter, this common region will be referred to as the third region A33.

[0152] Similarly, in this embodiment, a common region is used as the fourth region for configuring a plurality of second MR elements 50B and the fourth region for configuring a plurality of third MR elements 50C. Hereinafter, this common region will be referred to as the fourth region A34.

[0153] The positional relationships of the first to fourth regions A31, A32, A33, and A34 are the same as the positional relationships of the first to fourth regions A21, A22, A23, and A24 in the element configuration area of ​​the first magnetic sensor 10. If the first to fourth regions A21, A22, A23, and A24 in the description of their positional relationships are replaced with the first to fourth regions A31, A32, A33, and A34 respectively, then it becomes a description of the positional relationships of the first to fourth regions A31, A32, A33, and A34.

[0154] Furthermore, when the entire upper surface 3a of the second chip 3 is a component configuration area for the second and third magnetic sensors 20 and 30, the component configuration area may also include an area for configuring a plurality of second pads 31. Additionally, when a portion of the upper surface 3a of the second chip 3 is a component configuration area for the second and third magnetic sensors 20 and 30, the component configuration area may or may not include an area for configuring a plurality of second pads 31.

[0155] Next, the function and effect of the magnetic sensor device 1 according to this embodiment will be explained. When stress is generated in the support body 4 due to external force or temperature, the stress distribution in the support body 4 becomes symmetrical about the center of gravity C4 of the reference plane 4a. Figure 17 This is a schematic diagram illustrating the stress distribution within support 4. Figure 17 In the diagram, the stress distribution is shown using contour lines.

[0156] When stress is applied to the MR element 50, the magnetization direction of the magnetization fixing layer 52 of the MR element 50 sometimes deviates from the designed direction. For example, when tensile stress is applied to the MR element 50 in a direction intersecting the magnetization direction of the magnetization fixing layer 52, the magnetization direction of the magnetization fixing layer 52 changes slightly toward the direction of the tensile stress. As a result, the resistance value of the MR element 50 changes when no object magnetic field is applied to the MR element 50.

[0157] Here, the effect of the stress applied to each MR element 50 on the detected value is considered using the first magnetic sensor 10 as an example. Assuming that the magnitude of the stress applied to each of the first MR elements 50A differs between the first resistive section R11 and the second resistive section R12, the change in resistance value of the first resistive section R11 caused by stress is different from the change in resistance value of the second resistive section R12 caused by stress. As a result, an offset occurs in the first detection signal S11.

[0158] Similarly, between the third resistor R13 and the fourth resistor R14, when the magnitude of the stress applied to each of the first MR elements 50A is different, the amount of change in the resistance value of the third resistor R13 caused by stress is different from the amount of change in the resistance value of the fourth resistor R14 caused by stress. As a result, the first detection signal S12 deviates. The deviance of the first detection signals S11 and S12 is the cause of the deviance of the first detection value Su.

[0159] In order to ensure that the stress applied to each of the first MR elements 50A is equal between the first resistor section R11 and the second resistor section R12, and between the third resistor section R13 and the fourth resistor section R14, it is considered to mount the first chip 2 on the support body 4 in such a way that the center of gravity of the planar shape of the first chip 2 coincides with the center of gravity C4 of the reference plane 4a. However, in this case, due to the size of the first chip 2 and the size of the second chip 3, it is impossible to mount the second chip 3 on the support body 4.

[0160] In contrast, in this embodiment, the first chip 2 is offset from the center of gravity C4 of the reference plane 4a, and the magnetization directions of the magnetization fixed layers 52 of the first to fourth resistive portions R11, R12, R13, and R14, the magnetization directions of the free layers 54 of the first to fourth resistive portions R11, R12, R13, and R14, and the configurations of the first to fourth regions A21, A22, A23, and A24 of the element configuration area of ​​the first magnetic sensor 10 are respectively defined as described above. Therefore, according to this embodiment, the deviation of the first detection value Su can be suppressed.

[0161] The reasons for suppressing the deviation of the first detection value Su will be explained in detail below. Furthermore, in the following explanation, when referring only to resistance values, it refers to the resistance value when no target magnetic field is applied to the first magnetic sensor 10. First, the case where stress in the second reference direction Ry is applied to the first magnetic sensor 10 will be explained. Here, r1 represents the resistance value of the first resistive section R11, r2 represents the resistance value of the second resistive section R12, r3 represents the resistance value of the third resistive section R13, and r4 represents the resistance value of the fourth resistive section R14. Furthermore, r1, r2, r3, and r4 are all equal when no stress is applied to the first magnetic sensor 10.

[0162] The first detection value Su depends on the difference S11-S12 between the first detection signal S11 and the first detection signal S12. The difference S11-S12 depends on the potential difference E between the signal output terminals E11 and E12. The potential difference E is expressed by the following equation (3). In addition, in equation (3), V represents the voltage applied to the power supply terminal V1.

[0163] E=V·(r2·r4-r1·r3) / {(r1+r2)(r3+r4)} (3)

[0164] When a stress in the second reference direction Ry is applied to the first magnetic sensor 10, r1 and r4 increase while r2 and r3 decrease, or r1 and r4 decrease while r2 and r3 increase. Furthermore, the stress distributions in the first to fourth regions A21, A22, A23, and A24 become approximately equal. When the aforementioned variations in r1, r2, r3, and r4 are applied to equation (3), ideally, the potential difference E remains almost unchanged. Therefore, even when a stress in the second reference direction Ry is applied to the first magnetic sensor 10, the shift in the first detection value Su is almost negligible.

[0165] Next, the case where a stress in the third reference direction Rx is applied to the first magnetic sensor 10 will be explained. The increase or decrease of r1, r2, r3, and r4 when a stress in the third reference direction Rx is applied to the first magnetic sensor 10 is the same as when a stress in the second reference direction Ry is applied to the first magnetic sensor 10. Furthermore, the stress applied to the first and third regions A21 and A23 becomes greater than the stress applied to the second and fourth regions A22 and A24. Therefore, the changes in r1 and r3 due to stress become greater than the changes in r2 and r4 due to stress. When the changes in r1, r2, r3, and r4 described above are applied to equation (3), ideally, the potential difference E hardly changes. Therefore, even when a stress in the third reference direction Rx is applied to the first magnetic sensor 10, the shift in the first detection value Su hardly occurs.

[0166] Based on the above explanation, according to this embodiment, the deviation of the first detection value Su can be suppressed.

[0167] Furthermore, to achieve the aforementioned effects, the magnetization direction of the free layers 54 of the first to fourth resistive sections R11, R12, R13, and R14 needs to be specified as described above. However, sometimes an external magnetic field causes the magnetization direction of the free layers 54 to be opposite to the designed direction. In this embodiment, the first magnetic sensor 10 includes a coil configured to apply an X-direction magnetic field to one of the free layers 54 of the first and second resistive sections R11 and R12, and to apply a -X-direction magnetic field to the other free layer 54. Thus, according to this embodiment, the magnetization direction of the free layers 54 can be made consistent with the designed direction.

[0168] The effect of stress applied to each MR element 50 has now been explained using the first magnetic sensor 10 as an example. The above explanation also applies to the second and third magnetic sensors 20 and 30. According to this embodiment, the shift in the second detection value Sv and the shift in the third detection value Sz can be suppressed.

[0169] Next, a brief description will be given of the manufacturing method of the magnetic sensor device 1 according to this embodiment. The manufacturing method of the magnetic sensor device 1 includes: a step of forming a first chip 2, a step of forming a second chip 3, and a step of mounting the first and second chips 2 and 3 on a support 4.

[0170] The process of forming the first chip 2 includes the process of forming the first magnetic sensor 10. The process of forming the second chip 3 includes the process of forming the second and third magnetic sensors 20 and 30. The process of forming the first magnetic sensor 10 and the process of forming the second and third magnetic sensors 20 and 30 each include the process of forming a plurality of MR elements 50.

[0171] In the process of forming multiple MR elements 50, firstly, multiple initial MR elements that will later become multiple MR elements 50 are formed. The multiple initial MR elements each include: an initial magnetization fixation layer that will later become a magnetization fixation layer 52, a free layer 54, a gap layer 53, and an antiferromagnetic layer 51.

[0172] Next, using a laser and an external magnetic field in a predetermined direction, the magnetization direction of the initial magnetization fixing layer is fixed in the predetermined direction. For example, in the plurality of initial MR elements that later become the first and third resistive sections R11 and R13 constituting the first magnetic sensor 10, an external magnetic field in the first magnetization direction (U direction) is applied, and the plurality of initial MR elements are irradiated with a laser. When the laser irradiation is completed, the magnetization direction of the initial magnetization fixing layer is fixed in the first magnetization direction. Thus, the initial magnetization fixing layer becomes the magnetization fixing layer 52, and the initial MR element becomes the MR element 50. Furthermore, in the plurality of initial MR elements that later become the second and fourth resistive sections R12 and R14 constituting the first magnetic sensor 10, by setting the direction of the external magnetic field to the second magnetization direction (-U direction), the magnetization direction of the initial magnetization fixing layer of each of the plurality of initial MR elements can be fixed in the second magnetization direction. In this way, a plurality of MR elements 50 are formed.

[0173] [Variation Example]

[0174] Next, refer to Figure 18 The following describes a variation of this embodiment. Figure 18 This is a perspective view showing a modified MR element 50. In the modified example, the first to third magnetic sensors 10, 20, and 30 replace the magnetic field generator containing coils and each includes a magnetic field generator 75 comprising multiple pairs of magnets. The magnetic field generator 75 is configured to apply a magnetic field in a third magnetization direction or a magnetic field in a fourth magnetization direction to the free layer 54.

[0175] The multiple magnet pairs each comprise two magnets 75A and 75B. Magnet 75A is positioned near one end of the MR element 50 along its long side. Magnet 75B is positioned near the other end of the MR element 50 along its long side. The magnetization of magnets 75A and 75B includes either a component of a third magnetization direction or a component of a fourth magnetization direction. Whether the magnetization of magnets 75A and 75B includes a component of the third or fourth magnetization direction depends on the direction of magnetization of the free layer 54 to which the magnetic field is applied, in the absence of an applied target magnetic field.

[0176] Furthermore, when the magnetization of magnets 75A and 75B includes a component with a specific magnetization direction, that component with a specific magnetization direction may also be the principal component of the magnetization of magnets 75A and 75B. Alternatively, the magnetization of magnets 75A and 75B may not include a component with a direction orthogonal to the specific magnetization direction. In a modified example, when the magnetization of magnets 75A and 75B includes a component with a specific magnetization direction, the direction of magnetization of magnets 75A and 75B becomes a specific magnetization direction or a substantially specific magnetization direction.

[0177] According to a modified example, the magnetic field generator 75 can prevent the direction of magnetization of the free layer 54 from becoming the opposite of the designed direction due to the external magnetic field.

[0178] [Second Implementation]

[0179] Next, a second embodiment of the present invention will be described. In the second embodiment, the magnetization direction of the free layer 54 of the MR element 50 is different from that in the first embodiment. Hereinafter, reference will be made to... Figures 19 to 21 The direction of magnetization of free layer 54 is explained. Figure 19 This is a circuit diagram showing the circuit structure of the first magnetic sensor 10. Figure 20 This is a circuit diagram showing the circuit structure of the second magnetic sensor 20. Figure 21 This is a circuit diagram showing the circuit structure of the third magnetic sensor 30.

[0180] exist Figure 19 In the diagram, hollow arrows indicate the magnetization directions of the free layers 54 of the first to fourth resistive portions R11, R12, R13, and R14 of the first magnetic sensor 10 when no object magnetic field is applied to the first magnetic sensor 10. For example... Figure 19 As shown, the magnetization of the free layers 54 of the first and fourth resistive portions R11 and R14 of the first magnetic sensor 10, in the above case, includes a component in the third magnetization direction (V direction). The magnetization of the free layers 54 of the second and third resistive portions R12 and R13 of the first magnetic sensor 10, in the above case, includes a component in the fourth magnetization direction (-V direction).

[0181] exist Figure 20 In the diagram, hollow arrows indicate the magnetization directions of the free layers 54 of the first to fourth resistive sections R21, R22, R23, and R24 of the second magnetic sensor 20 when no object magnetic field is applied to the second magnetic sensor 20. If the description of the magnetization direction of the free layers 54 of the first magnetic sensor 10, the resistive sections R11, R12, R13, R14, the V direction, and the -V direction are replaced with the description of the magnetization direction of the free layers 54 of the second magnetic sensor 20, the resistive sections R21, R22, R23, R24, the U direction, and the -U direction, respectively, then this becomes a description of the magnetization direction of the free layers 54 of the second magnetic sensor 20.

[0182] exist Figure 21In the diagram, hollow arrows indicate the magnetization directions of the free layers 54 of the first to fourth resistive sections R31, R32, R33, and R34 of the third magnetic sensor 30 when no object magnetic field is applied to the third magnetic sensor 30. If the description of the magnetization direction of the free layers 54 of the first magnetic sensor 10, the resistive sections R11, R12, R13, R14, the V direction, and the -V direction are replaced with the description of the magnetization direction of the free layers 54 of the third magnetic sensor 30, the resistive sections R31, R32, R33, R34, the U direction, and the -U direction, respectively, then this becomes a description of the magnetization direction of the free layers 54 of the third magnetic sensor 30.

[0183] Furthermore, in this embodiment, the first embodiment... Figure 11 and Figure 12 The structure of the coil, consisting of multiple lower coil elements 63A and multiple upper coil elements 64A, differs from that of the first embodiment. In this embodiment, the coil is configured such that an X-direction magnetic field is applied to one of the free layers 54 of the first and fourth resistive sections R11 and R14, and to the free layers 54 of the second and third resistive sections R12 and R13, while a -X-direction magnetic field is applied to the other free layer 54.

[0184] Furthermore, in this embodiment, the first embodiment... Figure 13 and Figure 14 The structure of the coil, consisting of multiple lower coil elements 63B and multiple upper coil elements 64B, shown differs from that of the first embodiment. In this embodiment, the coil is configured such that a magnetic field in the X direction is applied to one of the free layers 54 of the first and fourth resistive portions R21, R24 of the second magnetic sensor 20 and the first and fourth resistive portions R31, R34 of the third magnetic sensor 30, and a magnetic field in the -X direction is applied to the other free layer 54 of the second and third resistive portions R22, R23 of the second magnetic sensor 20 and the second and third resistive portions R32, R33 of the third magnetic sensor 30.

[0185] Next, the function and effects of the magnetic sensor device 1 according to this embodiment will be explained. In this embodiment, the magnetization direction of the free layer 54 of each of the first to fourth resistive portions R11, R12, R13, and R14 is specified as described above. Furthermore, in this embodiment, the magnetization direction of the magnetization fixing layer 52 of each of the first to fourth resistive portions R11, R12, R13, and R14 and the arrangement of the first to fourth regions A21, A22, A23, and A24 of the element arrangement area of ​​the first magnetic sensor 10 are specified as described in the first embodiment (see [reference]). Figure 16 Therefore, according to this embodiment, the deviation of the first detection value Su can be suppressed.

[0186] The reasons for suppressing the deviation of the first detection value Su will be explained in detail below. First, the case where stress in the second reference direction Ry is applied to the first magnetic sensor 10 will be explained. Here, as in the first embodiment, r1 represents the resistance value of the first resistor R11, r2 represents the resistance value of the second resistor R12, r3 represents the resistance value of the third resistor R13, and r4 represents the resistance value of the fourth resistor R14. When stress in the second reference direction Ry is applied to the first magnetic sensor 10, r1 and r2 increase, and r3 and r4 decrease, or r1 and r2 decrease, and r3 and r4 increase. Furthermore, as in the first embodiment, the changes in r1, r2, r3, and r4 caused by stress become approximately equal to each other. When the above-described changes in r1, r2, r3, and r4 are applied to equation (3) in the first embodiment, ideally, the potential difference E hardly changes. Therefore, even if stress in the second reference direction Ry is applied to the first magnetic sensor 10, the deviation of the first detection value Su will hardly occur.

[0187] Next, the case where stress in the third reference direction Rx is applied to the first magnetic sensor 10 will be explained. The increase or decrease of r1, r2, r3, and r4 when stress in the third reference direction Rx is applied to the first magnetic sensor 10 is the same as when stress in the second reference direction Ry is applied to the first magnetic sensor 10. Furthermore, similar to the first embodiment, the changes in r1 and r3 caused by stress become greater than the changes in r2 and r4 caused by stress. When the changes in r1, r2, r3, and r4 described above are applied to equation (3) in the first embodiment, ideally, the potential difference E hardly changes. Therefore, even when stress in the third reference direction Rx is applied to the first magnetic sensor 10, the shift in the first detection value Su hardly occurs.

[0188] Based on the above explanation, according to this embodiment, the deviation of the first detection value Su can be suppressed.

[0189] The above description has been given using the first magnetic sensor 10 as an example. The same description also applies to the second and third magnetic sensors 20 and 30. According to this embodiment, the shift in the second detection value Sv and the shift in the third detection value Sz can be suppressed.

[0190] The other structures, functions, and effects of this embodiment are the same as those of the first embodiment.

[0191] [Third Implementation Method]

[0192] Next, a third embodiment of the present invention will be described. In the third embodiment, the configuration of the element configuration region of the first magnetic sensor 10 and the configuration of the element configuration regions of the second and third magnetic sensors 20 and 30 differ from those in the first embodiment. Hereinafter, reference will be made to... Figure 22 The configuration of the component configuration area is explained. Figure 22 This is an explanatory diagram used to illustrate the configuration of the component placement area.

[0193] First, the configuration of the first to fourth regions A21, A22, A23, and A24 of the element configuration area of ​​the first magnetic sensor 10 will be described. In this embodiment, the second region A22 and the third region A23 are configured along the third reference direction Rx such that they sandwich the reference axis Ra when viewed from the first reference direction Rz. The first region A21 is configured between the second region A22 and the third region A23 when viewed from the first reference direction Rz. The fourth region A24 is configured between the first region A21 and the third region A23 when viewed from the first reference direction Rz. Figure 22 In the example shown, the first region A21 and the fourth region A24 are also configured along the third reference direction Rx such that they sandwich the reference axis Ra when viewed from the first reference direction Rz.

[0194] In this embodiment, the second region A22 and the third region A23 are symmetrically arranged about the reference axis Ra when viewed from the first reference direction Rz. Furthermore, the first region A21 and the fourth region A24 are symmetrically arranged about the reference axis Ra when viewed from the first reference direction Rz.

[0195] Next, the configuration of the first to fourth regions A31, A32, A33, and A34 of the element configuration areas of the second and third magnetic sensors 20 and 30 will be described. The positional relationship of the first to fourth regions A31, A32, A33, and A34 is the same as that of the first to fourth regions A21, A22, A23, and A24 of the element configuration area of ​​the first magnetic sensor 10. If the first to fourth regions A21, A22, A23, and A24 in the description of their positional relationship are replaced with the first to fourth regions A31, A32, A33, and A34 respectively, then it becomes a description of the positional relationship of the first to fourth regions A31, A32, A33, and A34.

[0196] Next, the function and effects of the magnetic sensor device 1 according to this embodiment will be explained. In this embodiment, the arrangement of the first to fourth regions A21, A22, A23, and A24 of the element arrangement area of ​​the first magnetic sensor 10 is defined as described above. Furthermore, in this embodiment, the magnetization direction of the magnetization fixed layer 52 of each of the first to fourth resistive portions R11, R12, R13, and R14 of the first magnetic sensor 10 and the magnetization direction of the free layer 54 of each of the first to fourth resistive portions R11, R12, R13, and R14 are defined as described in the first embodiment (see reference). Figure 8 Therefore, according to this embodiment, the deviation of the first detection value Su can be suppressed.

[0197] The reasons for suppressing the deviation of the first detection value Su will be explained in detail below. First, the case where stress in the second reference direction Ry is applied to the first magnetic sensor 10 will be explained. Here, similar to the first embodiment, r1 represents the resistance value of the first resistor R11, r2 represents the resistance value of the second resistor R12, r3 represents the resistance value of the third resistor R13, and r4 represents the resistance value of the fourth resistor R14. Similar to the first embodiment, when stress in the second reference direction Ry is applied to the first magnetic sensor 10, r1 and r4 increase while r2 and r3 decrease, or r1 and r4 decrease while r2 and r3 increase. Furthermore, the stress distributions of the first to fourth regions A21, A22, A23, and A24 become approximately equal to each other. Therefore, the changes in r1, r2, r3, and r4 caused by stress become approximately equal to each other. The changes in r1, r2, r3, and r4 described above are the same as those in the first embodiment when a stress in the second reference direction Ry is applied to the first magnetic sensor 10. Therefore, for the same reasons explained in the first embodiment, even when a stress in the second reference direction Ry is applied to the first magnetic sensor 10, the shift in the first detection value Su will hardly occur.

[0198] Next, the case where a stress in the third reference direction Rx is applied to the first magnetic sensor 10 will be explained. The increase or decrease of r1, r2, r3, and r4 when a stress in the third reference direction Rx is applied to the first magnetic sensor 10 is the same as when a stress in the second reference direction Ry is applied to the first magnetic sensor 10. Furthermore, the stress applied to the first and fourth regions A21 and A24 becomes greater than the stress applied to the second and third regions A22 and A23. Therefore, the changes in r1 and r4 due to stress become greater than the changes in r2 and r3 due to stress. When the changes in r1, r2, r3, and r4 described above are applied to equation (3) in the first embodiment, ideally, the potential difference E hardly changes. Therefore, even when a stress in the third reference direction Rx is applied to the first magnetic sensor 10, the shift in the first detection value Su hardly occurs.

[0199] Based on the above explanation, according to this embodiment, the deviation of the first detection value Su can be suppressed.

[0200] The above description has been given using the first magnetic sensor 10 as an example. The same description also applies to the second and third magnetic sensors 20 and 30. According to this embodiment, the shift in the second detection value Sv and the shift in the third detection value Sz can be suppressed.

[0201] The other structures, functions, and effects of this embodiment are the same as those of the first embodiment.

[0202] [Fourth Implementation Method]

[0203] Next, a fourth embodiment of the present invention will be described. In the fourth embodiment, the configuration of the element configuration region of the first magnetic sensor 10 and the configuration of the element configuration regions of the second and third magnetic sensors 20 and 30 differ from those in the first embodiment. Hereinafter, reference will be made to... Figure 23 The configuration of the component configuration area is explained. Figure 23 This is an explanatory diagram used to illustrate the configuration of the component placement area.

[0204] First, the configuration of the first to fourth regions A21, A22, A23, and A24 of the element configuration area of ​​the first magnetic sensor 10 will be described. In this embodiment, the first region A21 and the fourth region A24 are configured along the third reference direction Rx such that at least a portion of each of the first and fourth regions A21 and A24 sandwiches the reference axis Ra when viewed from the first reference direction Rz. The second region A22 and the third region A23 are configured along the third reference direction Rx such that at least a portion of each of the second and third regions A22 and A23 sandwiches the reference axis Ra when viewed from the first reference direction Rz. The second region A22 and the third region A23 are respectively positioned in front of the first region A21 and the fourth region A24 in the Y direction.

[0205] In this embodiment, specifically, the first region A21 and the fourth region A24 are arranged symmetrically about the reference axis Ra when viewed from the first reference direction Rz. The second region A22 and the third region A23 are also arranged symmetrically about the reference axis Ra when viewed from the first reference direction Rz. Furthermore, the first region A21 and the second region A22 are arranged symmetrically about an imaginary line L1 orthogonal to the reference axis Ra when viewed from the first reference direction Rz. The third region A23 and the fourth region A24 are also arranged symmetrically about the imaginary line L1 when viewed from the first reference direction Rz.

[0206] Next, the configuration of the first to fourth regions A31, A32, A33, and A34 of the element configuration areas of the second and third magnetic sensors 20 and 30 will be described. The positional relationship of the first to fourth regions A31, A32, A33, and A34 is the same as that of the first to fourth regions A21, A22, A23, and A24 of the element configuration area of ​​the first magnetic sensor 10, except for the configuration of the second and third regions A32 and A33 relative to the first and fourth regions A31 and A34. If the description of the positional relationship of the first to fourth regions A21, A22, A23, A24 is replaced with the first to fourth regions A31, A32, A33, A34 respectively, then it becomes a description of the positional relationship of the first to fourth regions A31, A32, A33, A34 other than the configuration of the second and third regions A32, A33 relative to the first and fourth regions A31, A34.

[0207] The second region A32 and the third region A33 are positioned in front of the first region A31 and the fourth region A34, respectively, in the -Y direction. Furthermore, the first region A31 and the second region A32 are symmetrically arranged around an imaginary line L2 orthogonal to the reference axis Ra when viewed from the first reference direction Rz. Similarly, the third region A33 and the fourth region A34 are symmetrically arranged around the imaginary line L2 when viewed from the first reference direction Rz.

[0208] Next, the operation and effects of the magnetic sensor device 1 according to this embodiment will be explained. In this embodiment, the arrangement of the first to fourth regions A21, A22, A23, and A24 of the element arrangement area of ​​the first magnetic sensor 10 is defined as described above. Furthermore, in this embodiment, the magnetization direction of the magnetization fixed layer 52 of each of the first to fourth resistive portions R11, R12, R13, and R14 of the first magnetic sensor 10 and the magnetization direction of the free layer 54 of each of the first to fourth resistive portions R11, R12, R13, and R14 are defined as described in the first embodiment (see [reference]). Figure 8Therefore, according to this embodiment, the deviation of the first detection value Su can be suppressed.

[0209] The reasons for suppressing the deviation of the first detection value Su will be explained in detail below. First, the case where stress in the second reference direction Ry is applied to the first magnetic sensor 10 will be explained. Here, similar to the first embodiment, r1 represents the resistance value of the first resistor R11, r2 represents the resistance value of the second resistor R12, r3 represents the resistance value of the third resistor R13, and r4 represents the resistance value of the fourth resistor R14. When stress in the second reference direction Ry is applied to the first magnetic sensor 10, r1 and r4 increase while r2 and r3 decrease, or r1 and r4 decrease while r2 and r3 increase. Furthermore, the stress applied to the first and fourth regions A21 and A24 becomes greater than the stress applied to the second and third regions A22 and A23. Therefore, the change in r1 and r4 caused by stress becomes greater than the change in r2 and r3 caused by stress. The changes in r1, r2, r3, and r4 described above are the same as those in the case where a stress in the third reference direction Rx is applied to the first magnetic sensor 10 in the first embodiment. Therefore, for the same reasons explained in the first embodiment, even if a stress in the second reference direction Ry is applied to the first magnetic sensor 10, the shift in the first detection value Su will hardly occur.

[0210] Next, the case where a stress in the third reference direction Rx is applied to the first magnetic sensor 10 will be explained. The increase or decrease of r1, r2, r3, and r4 when a stress in the third reference direction Rx is applied to the first magnetic sensor 10 is the same as when a stress in the second reference direction Ry is applied to the first magnetic sensor 10. Furthermore, the stress distributions in the first to fourth regions A21, A22, A23, and A24 become approximately equal to each other. Therefore, the changes in r1, r2, r3, and r4 caused by stress become approximately equal to each other. The changes in r1, r2, r3, and r4 described above are the same as the changes in r1, r2, r3, and r4 when a stress in the second reference direction Ry is applied to the first magnetic sensor 10 in the first embodiment. Therefore, for the same reasons explained in the first embodiment, even when a stress in the third reference direction Rx is applied to the first magnetic sensor 10, the shift in the first detection value Su will hardly occur.

[0211] Based on the above explanation, according to this embodiment, the deviation of the first detection value Su can be suppressed.

[0212] The above description has been given using the first magnetic sensor 10 as an example. The same description also applies to the second and third magnetic sensors 20 and 30. According to this embodiment, the shift in the second detection value Sv and the shift in the third detection value Sz can be suppressed.

[0213] The other structures, functions, and effects of this embodiment are the same as those of the first embodiment.

[0214] [Fifth Implementation]

[0215] Next, the fifth embodiment of the present invention will be described. In the fifth embodiment, the arrangement of the element configuration region of the first magnetic sensor 10 and the arrangement of the element configuration regions of the second and third magnetic sensors 20 and 30 differ from those in the fourth embodiment. Hereinafter, refer to... Figure 24 The configuration of the component configuration area is explained. Figure 24 This is an explanatory diagram used to illustrate the configuration of the component placement area.

[0216] First, the configuration of the first to fourth regions A21, A22, A23, and A24 of the element configuration area of ​​the first magnetic sensor 10 will be described. The configuration of the first to fourth regions A21, A22, A23, and A24 is the same as in the fourth embodiment, except that the second and third regions A22 and A23 are configured relative to the first and fourth regions A21 and A24. In this embodiment, the second region A22 and the third region A23 are configured in front of the first region A21 and the fourth region A24 in the -Y direction, respectively.

[0217] Next, the configuration of the first to fourth regions A31, A32, A33, and A34 of the element configuration areas of the second and third magnetic sensors 20 and 30 will be described. The configuration of the first to fourth regions A31, A32, A33, and A34 is the same as in the fourth embodiment, except that the second and third regions A32 and A33 are configured relative to the first and fourth regions A31 and A34. In this embodiment, the second region A32 and the third region A33 are configured in front of the first region A31 and the fourth region A34 in the Y direction, respectively.

[0218] Next, the operation and effects of the magnetic sensor device 1 according to this embodiment will be explained. In this embodiment, the arrangement of the first to fourth regions A21, A22, A23, and A24 of the element arrangement area of ​​the first magnetic sensor 10 is defined as described above. Furthermore, in this embodiment, the magnetization direction of the magnetization fixed layer 52 of each of the first to fourth resistive portions R11, R12, R13, and R14 of the first magnetic sensor 10 and the magnetization direction of the free layer 54 of each of the first to fourth resistive portions R11, R12, R13, and R14 are defined as described in the first embodiment (see [reference]). Figure 8Therefore, according to this embodiment, the deviation of the first detection value Su can be suppressed.

[0219] The reasons for suppressing the deviation of the first detection value Su will be explained in detail below. First, the case where a stress in the second reference direction Ry is applied to the first magnetic sensor 10 will be explained. Here, similar to the fourth embodiment (first embodiment), r1 represents the resistance value of the first resistor R11, r2 represents the resistance value of the second resistor R12, r3 represents the resistance value of the third resistor R13, and r4 represents the resistance value of the fourth resistor R14. Similar to the fourth embodiment, when a stress in the second reference direction Ry is applied to the first magnetic sensor 10, r1 and r4 increase while r2 and r3 decrease, or r1 and r4 decrease while r2 and r3 increase. Furthermore, the stress applied to the first and fourth regions A21 and A24 becomes less than the stress applied to the second and third regions A22 and A23. Therefore, the change in r1 and r4 caused by stress becomes less than the change caused by r2 and r3. When the variations of r1, r2, r3, and r4 described above are applied to equation (3) in the first embodiment, ideally, the potential difference E hardly changes. Therefore, even if a stress in the third reference direction Rx is applied to the first magnetic sensor 10, the deviation of the first detection value Su will hardly occur.

[0220] Next, the case where a stress in the third reference direction Rx is applied to the first magnetic sensor 10 will be described. The increase or decrease of r1, r2, r3, and r4 when a stress in the third reference direction Rx is applied to the first magnetic sensor 10 is the same as when a stress in the second reference direction Ry is applied to the first magnetic sensor 10. Furthermore, similar to the fourth embodiment, the changes in r1, r2, r3, and r4 caused by stress become approximately equal to each other. The changes in r1, r2, r3, and r4 described above are the same as the changes in r1, r2, r3, and r4 when a stress in the third reference direction Rx is applied to the first magnetic sensor 10 in the fourth embodiment. Therefore, for the same reasons explained in the fourth embodiment, even when a stress in the third reference direction Rx is applied to the first magnetic sensor 10, the shift in the first detection value Su is almost negligible.

[0221] Based on the above explanation, according to this embodiment, the deviation of the first detection value Su can be suppressed.

[0222] The above description has been given using the first magnetic sensor 10 as an example. The same description also applies to the second and third magnetic sensors 20 and 30. According to this embodiment, the shift in the second detection value Sv and the shift in the third detection value Sz can be suppressed.

[0223] The other structures, functions, and effects of this embodiment are the same as those of the fourth embodiment.

[0224] Furthermore, the present invention is not limited to the embodiments described above, and various modifications are possible. For example, the magnetic sensor device and magnetic sensor system of the present invention are not limited to detecting the relative position of the magnetic field generator with respect to the magnetic sensor device, but can also be applied to detecting the attitude of a magnetic sensor device configured to rotate in a specified magnetic field.

[0225] Furthermore, the plurality of second MR elements 50B of the second magnetic sensor 20 and the plurality of third MR elements 50C of the third magnetic sensor 30 are not limited to the inclined surfaces 35a, 35b of the plurality of grooves 35c respectively, but may also be formed on the inclined surfaces of the plurality of protrusions protruding in the Z direction from the upper surface of the insulating layer 35.

[0226] Alternatively, a second chip 3 can replace the second and third magnetic sensors 20 and 30, and include two magnetic sensors for generating detection values ​​corresponding to the component in the direction parallel to the V direction of the external magnetic field and the component in the direction parallel to the Z direction of the external magnetic field.

[0227] Alternatively, the first chip 2 may replace the first magnetic sensor 10 and include a magnetic sensor for generating a detection value corresponding to the component of the direction parallel to the V direction of the external magnetic field, and the second chip 3 may replace the second and third magnetic sensors 20 and 30 and include two magnetic sensors for generating a detection value corresponding to the component of the direction parallel to the U direction of the external magnetic field and a detection value corresponding to the component of the direction parallel to the Z direction of the external magnetic field.

[0228] In addition, the processor 40 may not be included in the support body 4, or it may not be integrated with the first and second chips 2 and 3.

[0229] Furthermore, the first to third magnetic sensors 10, 20, and 30 can also be contained within a single chip. In this case, the reference plane can also be the upper surface of the chip. The component configuration area of ​​the first magnetic sensor 10 and the component configuration areas of the second and third magnetic sensors 20 and 30 can also be contained within the reference plane.

[0230] In addition, the magnetic sensor device 1 may not have either the first chip 2 or the second chip 3.

[0231] Furthermore, the component configuration area of ​​the first magnetic sensor 10 and the component configuration areas of the second and third magnetic sensors 20 and 30 can also be set in an orientation shown in the attached figures, rotated 90° around the center of gravity C4 of the reference plane 4a. In this case, the second reference direction becomes a direction parallel to the X direction, and the third reference direction becomes a direction parallel to the Y direction.

[0232] Furthermore, the component configuration area of ​​the first magnetic sensor 10 and the component configuration areas of the second and third magnetic sensors 20 and 30 can also be set in an orientation that is rotated 180° around the center of gravity C4 of the reference plane 4a, as shown in the attached figure.

[0233] Furthermore, the angle between the first magnetization direction and the second reference direction Ry can also be 0° or 90°.

[0234] Furthermore, in the third to fifth embodiments, the direction of magnetization of the free layer 54 of the MR element 50 may be the same as in the second embodiment.

[0235] Based on the above description, it is evident that various methods and variations of the present invention can be implemented. Therefore, within the equivalent scope of the claims, the present invention can also be implemented in ways other than the optimal methods described above.

Claims

1. A magnetic sensor device, characterized in that: have: At least one magnetic sensor comprising a plurality of magnetoresistive effect elements and an element configuration region for configuring the plurality of magnetoresistive effect elements, and configured to detect an object magnetic field as the object of detection; and A support body that supports at least one magnetic sensor and has a reference plane. When viewed from a first reference direction, the center of gravity of the component configuration area deviates from the center of gravity of the reference plane, where the first reference direction is perpendicular to the reference plane. The at least one magnetic sensor further includes: The first and second resistive sections are connected in series along a first path that serves as the electrical connection between the first and second connection points; and The third and fourth resistor sections are connected in series along a second path that serves as the electrical connection between the first and second connection points. The first resistor section and the fourth resistor section are connected to the first connection point. The second and third resistor sections are connected to the second connection point. The plurality of magnetoresistive elements constitute the first resistive section, the second resistive section, the third resistive section, and the fourth resistive section. Each of the plurality of magnetoresistive effect elements includes: a magnetized fixed layer having a fixed orientation of magnetization, a magnetized free layer having an orientation that can change according to the magnetic field of the object, and a gap layer disposed between the magnetized fixed layer and the free layer. The magnetization of the magnetization fixing layer of each of the first and third resistive portions includes a component of a first magnetization direction, which is a direction intersecting the first reference direction. The magnetization of the magnetization fixing layer of each of the second and fourth resistive portions includes a component of a second magnetization direction, which is a direction that intersects the first reference direction and is opposite to the first magnetization direction. The magnetization of the free layer of each of the first, second, third, and fourth resistive portions, when the target magnetic field is not applied to the at least one magnetic sensor, includes a component of a third magnetization direction, which is a direction intersecting the first reference direction and orthogonal to the first magnetization direction. The magnetization of the free layer of each of the first, second, third, and fourth resistive portions, when the target magnetic field is not applied to the at least one magnetic sensor, includes a component of a fourth magnetization direction, which is a direction that intersects the first reference direction and is opposite to the third magnetization direction.

2. The magnetic sensor device according to claim 1, characterized in that: The magnetization of the free layer of each of the first and second resistive portions, without applying the target magnetic field to the at least one magnetic sensor, includes a component of the third magnetization direction. The magnetization of the free layer of each of the third and fourth resistive sections includes a component of the fourth magnetization direction when the target magnetic field is not applied to the at least one magnetic sensor.

3. The magnetic sensor device according to claim 1, characterized in that: The magnetization of the free layer of each of the first and fourth resistive sections, when the target magnetic field is not applied to the at least one magnetic sensor, includes a component of the third magnetization direction. The magnetization of the free layer of each of the second and third resistive portions includes a component of the fourth magnetization direction when the target magnetic field is not applied to the at least one magnetic sensor.

4. The magnetic sensor device according to claim 1, characterized in that: The deviation of the center of gravity of the component configuration area from the center of gravity of the reference plane in the second reference direction is greater than the deviation of the center of gravity of the component configuration area from the center of gravity of the reference plane in the third reference direction. The second reference direction and the third reference direction are two directions orthogonal to the first reference direction. The angle between the first magnetization direction and the second reference direction is greater than 0° and less than 90°.

5. The magnetic sensor device according to claim 1, characterized in that: The at least one magnetic sensor also includes a magnetic field generator. The magnetic field generator is configured to apply a magnetic field to the free layer in a direction that intersects with each of the first magnetization direction, the second magnetization direction, the third magnetization direction, and the fourth magnetization direction.

6. The magnetic sensor device according to claim 1, characterized in that: The at least one magnetic sensor also includes a magnetic field generator. The magnetic field generator is configured to apply a magnetic field in the third magnetization direction or a magnetic field in the fourth magnetization direction to the free layer.

7. The magnetic sensor device according to claim 1, characterized in that: The deviation of the center of gravity of the component configuration area from the center of gravity of the reference plane in the second reference direction is greater than the deviation of the center of gravity of the component configuration area from the center of gravity of the reference plane in the third reference direction. The second reference direction and the third reference direction are two directions orthogonal to the first reference direction. The component configuration area includes: A first region is used to configure at least one magnetoresistive element that constitutes the first resistive portion of the plurality of magnetoresistive effect elements. The second region is used to configure at least one magnetoresistive element among the plurality of magnetoresistive effect elements that constitutes the second resistive portion; The third region is used to configure at least one magnetoresistive element among the plurality of magnetoresistive effect elements that constitutes the third resistive section; and A fourth region is configured to house at least one magnetoresistive element that constitutes the fourth resistive section among the plurality of magnetoresistive elements. At least two of the first, second, third, and fourth regions are arranged along the third reference direction such that at least a portion of each of the at least two regions sandwiches a reference axis when viewed from the first reference direction. The reference axis is a straight line passing through the center of gravity of the reference plane and parallel to the second reference direction.

8. The magnetic sensor device according to claim 7, characterized in that: The second region and the fourth region are arranged along the third reference direction such that they sandwich the reference axis when viewed from the first reference direction. The first region, when viewed from the first reference direction, is positioned between the second region and the fourth region. The third region, when viewed from the first reference direction, is positioned between the first region and the second region.

9. The magnetic sensor device according to claim 7, characterized in that: The second region and the third region are arranged along the third reference direction such that they sandwich the reference axis when viewed from the first reference direction. The first region, when viewed from the first reference direction, is positioned between the second region and the third region. The fourth region, when viewed from the first reference direction, is positioned between the first region and the third region.

10. The magnetic sensor device according to claim 7, characterized in that: The first region and the fourth region are configured along the third reference direction such that at least a portion of each of the first region, the second region, the third region, and the fourth region sandwiches the reference axis when viewed from the first reference direction. The second region and the third region are arranged along the third reference direction such that at least a portion of each of the second region and the third region sandwiches the reference axis when viewed from the first reference direction. The second region and the third region are respectively positioned in front of the first region and the fourth region in a direction parallel to the second reference direction.

11. The magnetic sensor device according to claim 10, characterized in that: The first region and the second region are arranged symmetrically about an imaginary straight line orthogonal to the reference axis when viewed from the first reference direction. The third region and the fourth region are symmetrically arranged around the imaginary straight line when viewed from the first reference direction.

12. The magnetic sensor device according to claim 7, characterized in that: The at least two regions are arranged symmetrically about the reference axis when viewed from the first reference direction.

13. The magnetic sensor device according to claim 7, characterized in that: The center of gravity of the component configuration area overlaps with the reference axis when viewed from the first reference direction.

14. The magnetic sensor device according to claim 1, characterized in that: The at least one magnetic sensor includes one magnetic sensor. The magnetic sensor is configured to detect a component of the magnetic field of the object in one direction and generate at least one detection signal that corresponds to the component in that direction.

15. The magnetic sensor device according to claim 14, characterized in that: It also includes: a chip containing the aforementioned magnetic sensor. The chip is mounted on the reference plane.

16. The magnetic sensor device according to claim 1, characterized in that: The at least one magnetic sensor includes two magnetic sensors. The two magnetic sensors are configured to detect the components of the object's magnetic field in two different directions.

17. The magnetic sensor device according to claim 16, characterized in that: It also includes: a chip containing the two magnetic sensors. The chip is mounted on the reference plane.

18. The magnetic sensor device according to claim 16, characterized in that: The two directions of the object's magnetic field are directions that are tilted relative to the reference plane and the first reference direction, respectively.

19. The magnetic sensor device according to claim 1, characterized in that: The at least one magnetic sensor includes: a first magnetic sensor, a second magnetic sensor, and a third magnetic sensor. The first magnetic sensor is configured to detect the component of the object's magnetic field in a first direction. The second magnetic sensor is configured to detect the second component of the magnetic field of the object. The third magnetic sensor is configured to detect the third-direction component of the object's magnetic field. The magnetic sensor device further comprises: a first chip including the first magnetic sensor, and a second chip including the second magnetic sensor and the third magnetic sensor. The first chip and the second chip are mounted on the reference plane and configured along a second reference direction orthogonal to the first reference direction.

20. The magnetic sensor device according to claim 19, characterized in that: The first direction is a direction parallel to the reference plane. The second direction is a direction inclined relative to each of the reference plane and the first reference direction. The third direction is another direction that is inclined relative to each of the reference plane and the first reference direction.

21. A magnetic sensor system, characterized in that: have: The magnetic sensor device according to claim 1; and A magnetic field generator that produces a specified magnetic field. The relative position of the magnetic field generator with respect to the magnetic sensor device can vary along a predetermined spherical surface.

22. A method for manufacturing a magnetic sensor device, characterized in that: The method for manufacturing the magnetic sensor device according to claim 1, The manufacturing method comprises: The process of forming the at least one magnetic sensor; and The process of installing the at least one magnetic sensor onto the support body The process of forming the at least one magnetic sensor includes the process of forming a plurality of magnetoresistive elements. The process of forming the plurality of magnetoresistive effect elements includes: The process of forming a plurality of initial magnetoresistive effect elements, which are respectively included in the initial magnetization fixed layer, the free layer, and the gap layer, which subsequently become the magnetization fixed layer; and The process of using a laser and an external magnetic field to fix the direction of magnetization of the initial magnetization fixing layer.

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