Light-emitting element and display device including the same

Abstract

Provided are a light-emitting element and a display device including the light-emitting element. The display device includes: a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other; a first insulating layer disposed between the first electrode and the second electrode and covering at least a portion of the first electrode and the second electrode; and a light-emitting element disposed on the first insulating layer and extending in a first direction. A cross-section of the light-emitting element includes: a first edge extending in the first direction; a second edge opposite to the first edge; a first side edge connecting one end of the first edge and one end of the second edge; and a second side edge connecting the other end of the first edge and the other end of the second edge. Each of the first inner angle and the second inner angle formed by the first edge and the first side edge and the second side edge is an acute angle.

Description

Technical Field

[0001] The present invention relates to a light emitting element and a display device including the light emitting element. Background Art

[0002] With the development of multimedia technology, the importance of display devices has steadily increased. In response to this, various types of display devices such as organic light emitting displays (OLEDs), liquid crystal displays (LCDs), etc. have been used.

[0003] A display device is a device for displaying an image and includes a display panel such as an organic light-emitting display panel or a liquid crystal display panel. The light-emitting display panel may include a light-emitting element such as a light-emitting diode (LED), and examples of the light-emitting diode include an organic light-emitting diode using an organic material as a fluorescent material and an inorganic light-emitting diode using an inorganic material as a fluorescent material. Summary of the Invention

[0004] Technical issues

[0005] A disclosed aspect provides a display device having improved contact reliability between a contact electrode and a light emitting element by forming both ends of the light emitting element to be inclined to prevent an insulating material from remaining in a region adjacent to the light emitting element.

[0006] The disclosed aspects also provide a display device having improved contact reliability by forming both ends of a light emitting element having the same width to be inclined to increase a contact area between a contact electrode and the light emitting element.

[0007] It should be noted that the disclosed aspects are not limited thereto, and other aspects not mentioned here will be apparent to those of ordinary skill in the art from the following description.

[0008] Technical Solution

[0009] According to the disclosed embodiment, the display device includes: a substrate; a first electrode, arranged on the substrate; a second electrode, arranged on the substrate and spaced apart from the first electrode; a first insulating layer, arranged between the first electrode and the second electrode, and covering at least a portion of the first electrode and the second electrode; and a light-emitting element, arranged on the first insulating layer between the first electrode and the second electrode, and extending in a first direction, wherein a cross-section of the light-emitting element cut along the first direction includes: a first edge, extending in the first direction; a second edge, extending in the first direction and opposite to the first edge; a first side edge, connecting one end of the first edge and one end of the second edge to each other; and a second side edge, connecting the other end of the first edge and the other end of the second edge to each other, a first internal angle formed by the first edge and the first side edge is an acute angle, and a second internal angle formed by the first edge and the second side edge is an acute angle.

[0010] The first interior angle may have a magnitude of 75° or less, and the second interior angle may have a magnitude of 75° or less.

[0011] The size of the first inner angle and the size of the second inner angle may be equal to each other.

[0012] The light emitting element may include a semiconductor core extending in a first direction, and an insulating layer surrounding a side surface of the semiconductor core.

[0013] The semiconductor core may include a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer.

[0014] The first semiconductor layer, the active layer, and the second semiconductor layer may be sequentially disposed in a first direction, and each interface between the first semiconductor layer, the active layer, and the second semiconductor layer may be substantially perpendicular to the first direction.

[0015] The first semiconductor layer, the active layer, and the second semiconductor layer may be sequentially disposed in the first direction, and each interface between the first semiconductor layer, the active layer, and the second semiconductor layer may be inclined with respect to the first direction.

[0016] The first side of the light emitting element may at least partially contact the upper surface of the first insulating layer.

[0017] The upper surface and the first side of the first insulating layer contacting the light emitting element may have an acute inclination, and the upper surface and the second side of the first insulating layer contacting the light emitting element may have an acute inclination.

[0018] The display device may further include a second insulating layer disposed on the light emitting element and exposing at least the first side and the second side.

[0019] The second insulating layer may not overlap the first side and the second side.

[0020] The display device may further include a first contact electrode and a second contact electrode disposed on the first insulating layer and spaced apart from each other, wherein the first contact electrode may contact the first electrode and the first side, and the second contact electrode may contact the second electrode and the second side.

[0021] According to a disclosed embodiment, a display device includes: a substrate; a first electrode disposed on the substrate; a second electrode disposed on the substrate and spaced apart from the first electrode; a first insulating layer disposed between the first electrode and the second electrode and covering at least a portion of the first electrode and the second electrode; and a light-emitting element disposed on the first insulating layer between the first electrode and the second electrode and extending in a first direction, wherein the light-emitting element includes: a first end electrically connected to the first electrode; and a second end electrically connected to the second electrode, and the first end and the second end are inclined relative to the first direction.

[0022] The first direction may be parallel to the upper surface of the substrate, the inclined surface of the first end may be inclined in a positive direction or a negative direction relative to the upper surface of the substrate, the inclined surface of the second end may be inclined in a positive direction or a negative direction relative to the upper surface of the substrate, and the inclined surface of the first end and the inclined surface of the second end may be inclined in directions opposite to each other relative to the upper surface of the substrate.

[0023] The inclined surface of the first end and the inclined surface of the second end may be in a symmetrical relationship with respect to a cut surface passing through a central portion of the light emitting element in a direction perpendicular to the first direction.

[0024] The display device may further include a first contact electrode and a second contact electrode disposed on the first insulating layer and spaced apart from each other, wherein the first contact electrode may contact the first electrode and the first end, and the second contact electrode may contact the second electrode and the second end.

[0025] The display device may further include a second insulating layer disposed on the light emitting element and not overlapping the first end and the second end.

[0026] With respect to a second direction perpendicular to the first direction in a central portion of the light emitting element, the inclined extending surface of the first end and the inclined extending surface of the second end may each be inclined toward one side in the second direction.

[0027] The second direction may be the same as a thickness direction of the display device.

[0028] According to a disclosed embodiment, a light-emitting element extending in a first direction is provided, wherein a cross-section of the light-emitting element cut along the first direction includes: a first edge extending in the first direction; a second edge extending in the first direction and opposite to the first edge; a first side edge connecting one end of the first edge and one end of the second edge to each other; and a second side edge connecting the other end of the first edge and the other end of the second edge to each other, a first internal angle formed by the first edge and the first side edge is an acute angle, and a second internal angle formed by the first edge and the second side edge is an acute angle.

[0029] The light emitting element may include: a semiconductor core extending in a first direction; and an insulating layer surrounding a side surface of the semiconductor core.

[0030] The semiconductor core may include: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; and an active layer disposed between the first semiconductor layer and the second semiconductor layer.

[0031] The first semiconductor layer, the active layer, and the second semiconductor layer may be sequentially disposed in a first direction, and each interface between the first semiconductor layer, the active layer, and the second semiconductor layer may be substantially perpendicular to the first direction.

[0032] The first semiconductor layer, the active layer, and the second semiconductor layer may be sequentially disposed in the first direction, and each interface between the first semiconductor layer, the active layer, and the second semiconductor layer may be inclined with respect to the first direction.

[0033] Details of other embodiments are included in the detailed description and accompanying drawings.

[0034] Beneficial effects

[0035] In the display device according to the embodiment, by forming the ends of the light-emitting element to be inclined, it is possible to prevent the generation of a residual film of the second insulating material layer in the region adjacent to the light-emitting element during the process of patterning the second insulating layer. Therefore, by preventing the second insulating material layer from remaining in the region adjacent to the ends of the light-emitting element, poor contact between the light-emitting element and the contact electrode can be prevented.

[0036] In addition, it is possible to provide a display device with improved contact reliability by forming both ends of a light emitting element to be inclined to increase a contact area with a contact electrode for the same width of the light emitting element.

[0037] The effects according to the embodiment are not limited to the above-exemplified contents, and more various effects are included in the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 is a schematic plan view of a display device according to an embodiment;

[0039] Figure 2 is a plan view showing one pixel of a display device according to an embodiment;

[0040] Figure 3 It is along Figure 2 Cross-sectional views taken along line IIIa-IIIa', line IIIb-IIIb', and line IIIc-IIIc';

[0041] Figure 4 is a partial cross-sectional view of a display device according to another embodiment;

[0042] Figure 5 is a schematic perspective view of a light emitting element according to an embodiment;

[0043] Figure 6 yes Figure 5 A side view of a light emitting element;

[0044] Figure 7 yes Figure 3 An enlarged cross-sectional view of a region P;

[0045] Figure 8a It is shown along Figure 5 A cross-sectional view of an example of a light emitting element taken along line VIII-VIII';

[0046] Figure 8b It is shown along Figure 5 A cross-sectional view of another example of the light emitting element taken along line VIII-VIII';

[0047] Figure 8c It is shown along Figure 5 A cross-sectional view of another example of the light emitting element taken along line VIII-VIII';

[0048] Figure 9 yes Figure 3 The settings include Figure 8a An enlarged cross-sectional view of a region Q of a light-emitting element;

[0049] Figures 10 to 16 It shows the manufacturing Figure 8a A cross-sectional view of a process of a light-emitting element;

[0050] Figure 17 It is shown along Figure 5 A cross-sectional view of another example of the light emitting element taken along line VIII-VIII';

[0051] Figure 18 yes Figure 3 The settings include Figure 17 An enlarged cross-sectional view of a region Q of a light emitting element; and

[0052] Figures 19 to 23 It shows the manufacturing Figure 17 A cross-sectional view of the process of producing a light-emitting element. DETAILED DESCRIPTION

[0053] The invention will now be described more fully hereinafter with reference to the accompanying drawings in which preferred embodiments of the invention are shown. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art.

[0054] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Throughout the specification, like reference numerals refer to like components.

[0055] It will be understood that although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first element discussed below could be referred to as the second element without departing from the teachings of the invention. Similarly, the second element could also be referred to as the first element.

[0056] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0057] Figure 1 is a schematic plan view of a display device according to an embodiment.

[0058] Reference Figure 1 The display device 10 displays a moving image or a still image. The display device 10 may refer to any electronic device that provides a display screen. For example, the display device 10 may include a television, a laptop computer, a monitor, a billboard, an Internet of Things device, a mobile phone, a smartphone, a tablet personal computer (PC), an electronic watch, a smartwatch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation system, a game console, a digital camera, a video camera, etc.

[0059] The display device 10 includes a display panel for providing a display screen. Examples of display panels include inorganic light-emitting diode display panels, organic light-emitting display panels, quantum dot light-emitting display panels, plasma display panels, and field emission display panels. Hereinafter, an inorganic light-emitting diode display panel may be used as an example of a display panel, but the disclosure is not limited thereto. Any display panel may be used as the display panel as long as the same technical concept is applied.

[0060] In the drawings, a first direction DR1, a second direction DR2, and a third direction DR3 are defined. The first direction DR1 and the second direction DR2 may be directions perpendicular to each other in a plane. The third direction DR3 may be a direction perpendicular to the plane in which the first direction DR1 and the second direction DR2 lie. The third direction DR3 is perpendicular to each of the first direction DR1 and the second direction DR2. In the embodiment used to describe the display device 10, the third direction DR3 refers to the thickness direction of the display device 10.

[0061] The display device 10 may have a rectangular shape in a plan view, including long sides and short sides, wherein the sides in the first direction DR1 are longer than the sides in the second direction DR2. The corner portions where the long sides and short sides of the display device 10 intersect in a plan view may be right angles, but are not limited thereto, and may also have a smoothly curved shape. The shape of the display device 10 is not limited to the above-described shape and may be modified in various ways. For example, the display device 10 may also have other shapes such as a square, a rectangle with smooth corners (vertices), other polygons, a circle, and the like.

[0062] The display surface of the display device 10 can be provided on one side in the third direction DR3, which is the thickness direction. In the description of the display device 10, unless otherwise specified in the embodiments, the upper portion or upper side refers to the display direction, which is one side in the third direction DR3. Similarly, the upper surface refers to the surface facing the one side in the third direction DR3. Furthermore, the lower portion or lower side refers to the direction opposite to the display direction, which is the other side in the third direction DR3. The lower surface refers to the surface facing the other side in the third direction DR3.

[0063] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA is an area where a picture can be displayed, and the non-display area NDA is an area where a picture is not displayed. The display area DPA may be referred to as an active area, and the non-display area NDA may be referred to as an inactive area.

[0064] The shape of the display area DPA may follow the shape of the display device 10. For example, the shape of the display area DPA may have a rectangular shape in a plan view, similar to the overall shape of the display device 10. The display area DPA may substantially occupy the center of the display device 10.

[0065] The display area DPA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in a matrix form. Each of the pixels PX may have a rectangular shape or a square shape in a plan view. However, the disclosure is not limited thereto, and each of the pixels PX may have a rhombus shape in which each side is inclined relative to one direction. The individual pixels PX may be alternately arranged in a stripe type or a pentile type. In addition, each of the pixels PX may include one or more light-emitting elements 30 (see FIG. 1 ) that emit light of a specific wavelength band. Figure 2 ).

[0066] The non-display area NDA may be disposed around the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. In an embodiment, the display area DPA may have a rectangular shape, and the non-display area NDA may be disposed adjacent to four sides of the display area DPA. The non-display area NDA may constitute a frame of the display device 10. Wiring or circuit drivers included in the display device 10 may be disposed in the non-display area NDA, or a pad portion on which an external device is mounted may be disposed in the non-display area NDA.

[0067] Figure 2 is a plan view showing one pixel of the display device according to the embodiment.

[0068] Reference Figure 2 , each of the plurality of pixels PX may include a plurality of sub-pixels SPX (SPX1, SPX2, and SPX3). For example, the pixel PX may include a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3. The first sub-pixel SPX1 may emit light of a first color, the second sub-pixel SPX2 may emit light of a second color, and the third sub-pixel SPX3 may emit light of a third color. The first color may be blue, the second color may be green, and the third color may be red. However, the disclosure is not limited thereto, and each of the sub-pixels SPX1, SPX2, and SPX3 may emit light of the same color. Although Figure 2 It is shown that each pixel PX includes three sub-pixels SPX1 , SPX2 , and SPX3 , but the disclosure is not limited thereto, and each pixel PX may include a larger number of sub-pixels SPX.

[0069] Each of the sub-pixels SPX of the display device 10 may include an emission region EMA and a non-emission region (not shown). The emission region EMA may be a region where light emitted from the light emitting element 30 is emitted, and the non-emission region may be a region where light emitted from the light emitting element does not reach so that no light is emitted therefrom.

[0070] The light emitting area EMA may include a region in which the light emitting element 30 is provided and a region adjacent thereto. In addition, the light emitting area EMA may further include a region in which light emitted from the light emitting element 30 is reflected or refracted by another member and then emitted.

[0071] Each of the sub-pixels SPX may further include a cutting area CBA disposed in the non-emission area. The cutting area CBA may be disposed at one side of the emission area EMA in the second direction DR2. The cutting area CBA may be disposed between the emission areas EMA of the sub-pixels SPX disposed adjacent to each other in the second direction DR2.

[0072] The emission areas EMA of the respective sub-pixels SPX included in one pixel PX may be arranged to be spaced apart from each other in the first direction DR1. Similarly, the plurality of cutting areas CBA may be arranged to be spaced apart from each other in the first direction DR1. The plurality of emission areas EMA and the plurality of cutting areas CBA may be arranged to be spaced apart from each other in the first direction DR1 and may be alternately arranged in the second direction DR2.

[0073] The cutting area CBA may be an area in which the electrodes 21 and 22 included in each of the sub-pixels SPX adjacent to each other in the second direction DR2 are separated from each other. The light emitting element 30 may not be provided in the cutting area CBA. In addition, a portion of the electrodes 21 and 22 provided in each of the sub-pixels SPX may be provided in the cutting area CBA. The electrodes 21 and 22 provided in each of the sub-pixels SPX may be separated from each other in the cutting area CBA.

[0074] Figure 3 It is along Figure 2 Cross-sectional views taken along line IIIa-IIIa', line IIIb-IIIb' and line IIIc-IIIc'.

[0075] Reference Figure 3 The display device 10 may include a circuit element layer PAL and a light emitting layer EML disposed on the circuit element layer PAL. The circuit element layer PAL may include a substrate 11 and a buffer layer 12 disposed on the substrate 11, a lower metal layer BML, a semiconductor layer, multiple conductive layers, multiple insulating layers, a via layer 19, and the like. The light emitting layer EML may be disposed on the via layer 19 of the circuit element layer PAL and may include multiple electrodes 21 and 22, partition walls 40, light emitting elements 30, multiple insulating layers 50 (51, 52, 53, and 54), and a bank 60.

[0076] The substrate 11 may be an insulating substrate. The substrate 11 may be made of an insulating material such as glass, quartz, or a polymer resin. In addition, the substrate 11 may be a rigid substrate, but may also be a flexible substrate that can be bent, folded, or rolled.

[0077] The lower metal layer BML may be disposed on the substrate 11. The lower metal layer BML may be a light-blocking layer for protecting the active material layer ACT of the semiconductor layer from external light. The lower metal layer BML may include a light-blocking material. For example, the lower metal layer BML may be formed of an opaque metal material that blocks light transmission.

[0078] The lower metal layer BML has a patterned shape. The lower metal layer BML may be provided on the lower portion to cover at least the channel region of the active material layer ACT of the transistor TR of the display device 10, and may also be provided to cover the entire active material layer ACT of the transistor TR. However, the disclosure is not limited thereto, and the lower metal layer BML may be omitted.

[0079] The buffer layer 12 may be provided on the lower metal layer BML. The buffer layer 12 may be provided to cover the entire surface of the substrate 11 on which the lower metal layer BML is provided. The buffer layer 12 may be used to protect the transistor TR from moisture that penetrates through the substrate 11, which is susceptible to moisture penetration. The buffer layer 12 may be formed as a plurality of inorganic layers stacked alternately. For example, the buffer layer 12 may be formed as a layer including silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiO x N y ) are alternately stacked with at least one inorganic layer.

[0080] The semiconductor layer is disposed on the buffer layer 12. The semiconductor layer may include an active material layer ACT of the transistor TR. The active material layer ACT may be disposed to overlap the lower metal layer BML.

[0081] The semiconductor layer may include polycrystalline silicon, an oxide semiconductor, or the like. In an embodiment, when the semiconductor layer includes polycrystalline silicon, the semiconductor layer may be formed by crystallizing amorphous silicon. In another embodiment, the semiconductor layer may also include an oxide semiconductor. Examples of oxide semiconductors may include indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium zinc tin oxide (IZTO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), and indium gallium zinc tin oxide (IGZTO).

[0082] The gate insulating layer 13 may be provided on the active material layer ACT. The gate insulating layer 13 may be provided on the buffer layer 12 on which the active material layer ACT is provided. The gate insulating layer 13 may serve as a gate insulating layer of the transistor TR. The gate insulating layer 13 may be formed to include a material such as silicon oxide (SiO x ), silicon nitride (SiN x ) or silicon oxynitride (SiO x Ny ) or can be formed in a stacked structure of the inorganic layers.

[0083] The gate conductive layer 14 may be disposed on the gate insulating layer 13. The gate conductive layer 14 may include a gate electrode GE of the transistor TR and a first capacitance electrode CSE of the storage capacitor.

[0084] The gate electrode GE may be arranged to overlap the channel region of the active material layer ACT in the thickness direction. The first capacitor electrode CSE may be arranged to overlap the second source / drain electrode SD2 of the transistor TR, which will be described later, in the thickness direction. The first capacitor electrode CSE may be arranged to overlap the second source / drain electrode SD2 in the third direction DR3 to form a storage capacitor therebetween. In some embodiments, the first capacitor electrode CSE and the gate electrode GE may be integrated into a single layer. A portion of the integrated layer may include the gate electrode GE, and another portion of the integrated layer may include the first capacitor electrode CSE.

[0085] The gate conductive layer 14 may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof. However, the disclosure is not limited thereto.

[0086] The interlayer insulating layer 15 is provided on the gate conductive layer 14. The interlayer insulating layer 15 may be provided on the gate insulating layer 13 on which the gate conductive layer 14 is formed. The interlayer insulating layer 15 may include a material such as silicon oxide (SiO x ), silicon nitride (SiN x ) or silicon oxynitride (SiO x N y ) of inorganic insulating materials.

[0087] The first data conductive layer 16 is disposed on the interlayer insulating layer 15. The first data conductive layer 16 may include first and second source / drain electrodes SD1 and SD2 of the transistor TR and the data line DTL.

[0088] The first source / drain electrode SD1 and the second source / drain electrode SD2 can be electrically connected to both end regions of the active material layer ACT (e.g., doped regions of the active material layer ACT) through contact holes penetrating the interlayer insulating layer 15 and the gate insulating layer 13, respectively. Furthermore, the second source / drain electrode SD2 of the transistor TR can be electrically connected to the lower metal layer BML through contact holes penetrating the interlayer insulating layer 15, the gate insulating layer 13, and the buffer layer 12.

[0089] The data line DTL may apply a data signal to another transistor (not shown) included in the display device 10. Although not shown in the drawings, the data line DTL may be connected to a source / drain electrode of another transistor.

[0090] The first data conductive layer 16 may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof. However, the disclosure is not limited thereto.

[0091] The passivation layer 17 is disposed on the first data conductive layer 16. The passivation layer 17 is used to cover and protect the first data conductive layer 16. The passivation layer 17 may include silicon oxide (SiO x ), silicon nitride (SiN x ) or silicon oxynitride (SiO x N y ) of inorganic insulating materials.

[0092] The second data conductive layer 18 is disposed on the passivation layer 17. The second data conductive layer 18 may include a first voltage line VL1, a second voltage line VL2, and a first conductive pattern CDP.

[0093] A high potential voltage (or first power supply voltage) may be supplied to the first voltage line VL1, and a low potential voltage (or second power supply voltage) lower than the high potential voltage (first power supply voltage) applied to the first voltage line VL1 may be supplied to the second voltage line VL2. The second voltage line VL2 may be electrically connected to the second electrode 22 to supply the low potential voltage (second power supply voltage) to the second electrode 22. Furthermore, during the manufacturing process of the display device 10, an alignment signal required for aligning the light-emitting element 30 may be applied to the second voltage line VL2.

[0094] The first conductive pattern CDP may be electrically connected to the second source / drain electrode SD2 of the transistor TR through a contact hole passing through the passivation layer 17. The first conductive pattern CDP may be electrically connected to the first electrode 21 through a first contact hole CT1 to be described later to transfer a first power voltage applied from the first voltage line VL1 to the first electrode 21.

[0095] The second data conductive layer 18 may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof. However, the disclosure is not limited thereto.

[0096] The via layer 19 is disposed on the second data conductive layer 18. The via layer 19 may be disposed on the passivation layer 17 on which the second data conductive layer 18 is disposed. The via layer 19 may serve to planarize the surface. The via layer 19 may include an organic insulating material such as polyimide (PI).

[0097] In the following, reference will be made to Figure 3 as well as Figure 2 The structure of the light emitting layer EML disposed on the via layer 19 is described in detail.

[0098] The partition wall 40 may be provided on the via layer 19. The partition wall 40 may have a shape extending in the second direction DR2 within each sub-pixel SPX in a plan view. The partition wall 40 may terminate in a state spaced apart from a boundary of a sub-pixel SPX adjacent to the second direction DR2 so as not to extend to other sub-pixels SPX adjacent to the second direction DR2.

[0099] In an embodiment, the partition wall 40 included in each sub-pixel SPX may include a first partition wall 41 and a second partition wall 42. The first partition wall 41 and the second partition wall 42 may be arranged in the light-emitting area EMA so as to face each other while being spaced apart from each other in the first direction DR1. The space formed by the first partition wall 41 and the second partition wall 42 spaced apart from each other may provide an area in which a plurality of light-emitting elements 30 are disposed. In the drawings, each sub-pixel SPX is shown as including two partition walls (e.g., the first partition wall 41 and the second partition wall 42), but the disclosure is not limited thereto. Depending on the shape or arrangement of the electrodes 21 and 22 to be described later, each sub-pixel SPX may also include a larger number of partition walls 40.

[0100] The partition wall 40 (41 and 42) can be directly arranged on the via layer 19. The partition wall 40 can have a structure in which at least a portion thereof protrudes from the upper surface of the via layer 19. The protrusion of the partition wall 40 can have an inclined side surface. The partition wall 40 can be used to change the direction of travel of light emitted from the light emitting element 30 and traveling toward the side surface of the partition wall 40 to an upward direction (for example, a display direction) by including an inclined side surface. That is, the partition wall 40 can provide a space in which the light emitting element 30 is arranged as described above, and also serve as a reflective partition wall that changes the direction of travel of light emitted from the light emitting element 30 to a display direction. Although the accompanying drawings show that the side surface of the partition wall 40 is inclined in a linear shape, the disclosure is not limited thereto. For example, the side surface (or outer surface) of the partition wall 40 can have a curved semicircular shape or a semi-elliptical shape. In an embodiment, the partition wall 40 may include an organic insulating material such as polyimide (PI), but is not limited thereto.

[0101] A plurality of electrodes 21 and 22 may be disposed on the partition wall 40 and the via layer 19 exposed by the partition wall 40. The plurality of electrodes 21 and 22 may include a first electrode 21 and a second electrode 22.

[0102] The first electrode 21 and the second electrode 22 may each have a shape extending in the second direction DR2 in a plan view. The first electrode 21 and the second electrode 22 may be arranged to face each other while being spaced apart from each other in the first direction DR1. The planar shapes of the first electrode 21 and the second electrode 22 are substantially similar to the planar shapes of the first partition wall 41 and the second partition wall 42, respectively, but the areas of the first electrode 21 and the second electrode 22 may be larger than the areas of the first partition wall 41 and the second partition wall 42.

[0103] The first electrode 21 may extend in the second direction DR2 in a plan view to overlap a partial region of the bank 60 extending in the first direction DR1. The first electrode 21 may contact the first conductive pattern CDP through a first contact hole CT1 penetrating the via layer 19. The first electrode 21 may be electrically connected to the transistor TR through the first conductive pattern CDP.

[0104] The second electrode 22 may extend in the second direction DR2 in a plan view to overlap a partial region of the bank 60 extending in the first direction DR1. The second electrode 22 may contact the second voltage line VL2 through a second contact hole CT2 penetrating the via layer 19.

[0105] Although the drawings show that the first and second contact holes CT1 and CT2 are disposed overlapping the bank 60, the disclosure is not limited thereto. For example, the first and second contact holes CT1 and CT2 may not overlap the bank 60 but may be disposed in the emission area EMA surrounded by the bank 60.

[0106] The cutting area CBA may be provided between the light-emitting areas EMA of the sub-pixel SPX that are adjacent to each other in the second direction DR2. The first electrode 21 and the second electrode 22 may be separated from the other electrodes 21 and 22 included in the sub-pixels SPX that are adjacent to each other in the second direction DR2 in the cutting area CBA within the sub-pixel SPX. During the process of manufacturing the display device 10, after the process of providing the light-emitting element 30, such shapes of the first electrode 21 and the second electrode 22 may be formed by disconnecting each of the electrodes 21 and 22 in the cutting area CBA. However, the disclosure is not limited thereto, and some of the electrodes 21 and 22 may extend to the sub-pixels SPX that are adjacent to each other in the second direction DR2 and may be provided integrally, or only one of the first electrode 21 and the second electrode 22 may be separated.

[0107] The shapes and arrangements of the first and second electrodes 21 and 22 provided in each sub-pixel SPX are not particularly limited as long as at least some regions of the first and second electrodes 21 and 22 are provided to face each other while being spaced apart from each other to form a space in which the light emitting element 30 is provided. Figure 2 and Figure 3 Although one first electrode 21 and one second electrode 22 are shown as being provided in each of the sub-pixels SPX, the disclosure is not limited thereto, and a larger number of first electrodes 21 and second electrodes 22 may be provided in each of the sub-pixels SPX. Furthermore, the planar shapes of the first electrode 21 and second electrode 22 provided in each sub-pixel SPX are not limited to shapes extending in one direction, and may have partially curved or bent shapes, and the first electrode 21 and second electrode 22 may be provided so that one electrode surrounds the other electrode.

[0108] The first electrode 21 may be disposed on the first partition wall 41 to cover the outer surface of the first partition wall 41. The first electrode 21 may extend outward from the side surface of the first partition wall 41 and may be partially disposed on the upper surface of the via layer 19 exposed by the first and second partition walls 41 and 42.

[0109] The second electrode 22 may be disposed on the second partition wall 42 to cover the outer surface of the second partition wall 42. The second electrode 22 may extend outward from the side surface of the second partition wall 42 and may be partially disposed on the upper surface of the via layer 19 exposed by the first partition wall 41 and the second partition wall 42. The first electrode 21 and the second electrode 22 may be disposed to be spaced apart from each other in the first direction DR1 so as to expose at least a portion of the via layer 19 in the region between the first partition wall 41 and the second partition wall 42.

[0110] The first electrode 21 and the second electrode 22 can be electrically connected to the light emitting element 30, respectively, and a predetermined voltage can be applied to the first electrode 21 and the second electrode 22 so that the light emitting element 30 emits light. For example, the plurality of electrodes 21 and 22 can be electrically connected to the light emitting element 30 disposed between the first electrode 21 and the second electrode 22 through contact electrodes 26 and 27 to be described later, and an electrical signal applied to the electrodes 21 and 22 can be transmitted to the light emitting element 30 through the contact electrodes 26 and 27.

[0111] In the embodiment, any one of the first electrode 21 and the second electrode 22 may be electrically connected to the anode electrode of the light emitting element 30, and the other of the first electrode 21 and the second electrode 22 may be electrically connected to the cathode electrode of the light emitting element 30. However, the first electrode 21 and the second electrode 22 are not limited thereto, and vice versa.

[0112] Each of the electrodes 21 and 22 can be used to form an electric field in the subpixel SPX to align the light-emitting elements 30. The light-emitting elements 30 can be positioned between the first and second electrodes 21 and 22 by the electric field formed on the first and second electrodes 21 and 22. In an embodiment, the light-emitting elements 30 of the display device 10 can be ejected onto the electrodes 21 and 22 using an inkjet printing process. When ink containing the light-emitting elements 30 is ejected onto the electrodes 21 and 22, an alignment signal is applied to the electrodes 21 and 22 to generate an electric field. The light-emitting elements 30 dispersed in the ink can be aligned on the electrodes 21 and 22 by receiving the electrophoretic force of the electric field generated on the electrodes 21 and 22.

[0113] Each of the electrodes 21 and 22 may include a transparent conductive material. As an example, each of the electrodes 21 and 22 may include a material such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO), but is not limited thereto. In some embodiments, each of the electrodes 21 and 22 may include a conductive material having a high reflectivity. For example, each of the electrodes 21 and 22 may include a metal such as silver (Ag), copper (Cu), or aluminum (Al), which is a material having a high reflectivity. In this case, each of the electrodes 21 and 22 may reflect light emitted from the light-emitting element 30 and traveling to the side surface of each of the partition walls 41 and 42, so that the light travels in the display direction in each sub-pixel SPX. The disclosure is not limited thereto, and each of the electrodes 21 and 22 may have a structure in which one or more layers made of a transparent conductive material and one or more layers made of a metal having a high reflectivity are stacked, or may be formed as a layer including a transparent conductive material and a metal having a high reflectivity. In an embodiment, each of the electrodes 21 and 22 may have a stack structure of ITO / silver (Ag) / ITO, ITO / Ag / IZO, or ITO / Ag / ITZO / IZO, or be made of an alloy including aluminum (Al), nickel (Ni), lanthanum (La), or the like.

[0114] The first insulating layer 51 may be provided on the plurality of electrodes 21 and 22. The first insulating layer 51 is provided on the via layer 19, the first electrode 21, and the second electrode 22, but is provided so as to expose at least a portion of the first electrode 21 and the second electrode 22. The first insulating layer 51 is formed entirely on the via layer 19 (including the region between the first electrode 21 and the second electrode 22), and may be provided so as to expose portions of the first electrode 21 and the second electrode 22 that overlap with the first partition wall 41 and the second partition wall 42, respectively.

[0115] The first insulating layer 51 may have a step formed so that a portion of its upper surface is recessed between the first electrode 21 and the second electrode 22. The first insulating layer 51 may be formed so that a portion of its upper surface is recessed due to a step formed by a member (e.g., the first electrode 21 and / or the second electrode 22) provided on its lower side. In some embodiments, an empty space may be formed between the light emitting element 30 and the upper surface of the first insulating layer 51 that is partially recessed by the step formed between the first electrode 21 and the second electrode 22. The empty space between the first insulating layer 51 and the light emitting element 30 may be filled with a material constituting the second insulating layer 52 to be described later. However, the disclosure is not limited thereto, and the first insulating layer 51 may not have a step formed between the first electrode 21 and the second electrode 22. For example, the first insulating layer 51 may also include a flat upper surface so that the light emitting element 30 is provided between the first electrode 21 and the second electrode 22.

[0116] The first insulating layer 51 can protect the first and second electrodes 21 and 22 while insulating the first and second electrodes 21 and 22 from each other. In addition, the first insulating layer 51 can prevent the light emitting element 30 disposed on the first insulating layer 51 from directly contacting other components and being damaged by other components.

[0117] The embankment 60 may be provided on the first insulating layer 51. In a plan view, the embankment 60 may be provided in a grid-shaped pattern over the entire surface of the display area DPA, including portions extending in the first direction DR1 and the second direction DR2. The embankment 60 may be provided across the boundaries between the respective sub-pixels SPX to distinguish between adjacent sub-pixels SPX. In addition, according to an embodiment, the embankment 60 may be formed to have a height greater than that of the partition wall 40. The embankment 60 may function to prevent ink from overflowing into adjacent sub-pixels SPX during the inkjet printing process of the process for manufacturing the display device 10. The embankment 60 may separate the inks dispersed in the different sub-pixels SPX by the different light-emitting elements 30 therein so that they do not mix with each other.

[0118] The embankment 60 may be provided to surround the emission area EMA and the cutting area CBA provided in each sub-pixel SPX to distinguish the emission area EMA from the cutting area CBA. The first electrode 21 and the second electrode 22 may extend in the second direction DR2 and may be provided to intersect the portion of the embankment 60 extending in the first direction DR1. The portion of the embankment 60 extending in the second direction DR2 and provided between the emission areas EMA may have a greater width than the portion provided between the cutting areas CBA. Therefore, the spacing between the cutting areas CBA may be smaller than the spacing between the emission areas EMA. Each of the electrodes 21 and 22 may overlap the embankment 60 provided between the cutting area CBA and the emission area EMA, and contact holes CT1 and CT2 may be formed in the overlapping portion.

[0119] Similar to the partition wall 40 , the bank 60 may include polyimide (PI), but is not limited thereto.

[0120] The light-emitting element 30 may be provided on the first insulating layer 51 between each of the electrodes 21 and 22. The light-emitting element 30 may have a shape extending in one direction. A plurality of light-emitting elements 30 may be provided spaced apart from each other in the second direction DR2 in which each of the electrodes 21 and 22 extends, and may be aligned substantially parallel to each other. The spacing between the spaced-apart light-emitting elements 30 is not particularly limited. In addition, the light-emitting element 30 may have a shape extending in one direction, and the direction in which each of the electrodes 21 and 22 extends and the direction in which the light-emitting element 30 extends may be substantially perpendicular to each other. However, the disclosure is not limited thereto, and the light-emitting element 30 may also be provided tilted so as not to be perpendicular to the direction in which each of the electrodes 21 and 22 extends. A detailed description of the shape of the light-emitting element 30 will be described later with reference to other figures.

[0121] The light emitting element 30 may include an active layer 36 (see Figure 8a ) to emit light of a specific wavelength band to the outside. The display device 10 may include a light-emitting element 30 that emits light of different wavelength bands. Therefore, light of a first color, light of a second color, and light of a third color may be emitted from the first subpixel SPX1, the second subpixel SPX2, and the third subpixel SPX3, respectively. However, the disclosure is not limited thereto, and the light-emitting element 30 included in each subpixel SPX may include an active layer 36 containing the same material to emit light of substantially the same color.

[0122] The second insulating layer 52 may be partially disposed on the light-emitting element 30 disposed between the first electrode 21 and the second electrode 22. The second insulating layer 52 may be disposed so as to partially surround the outer surface of the light-emitting element 30. The second insulating layer 52 may be disposed on the light-emitting element 30, but may leave one end and the other end of the light-emitting element 30 exposed. The portion of the second insulating layer 52 disposed on the light-emitting element 30 may have a shape extending in the second direction DR2 between the first electrode 21 and the second electrode 22 in a plan view. As an example, the second insulating layer 52 may form a linear pattern or an island pattern in each sub-pixel SPX. Although not shown in the drawings, as described above, the material constituting the second insulating layer 52 may fill the empty space between the first insulating layer 51 and the light-emitting element 30, which is disposed between the first electrode 21 and the second electrode 22 and formed by the recess.

[0123] The second insulating layer 52 may be used to protect the light emitting element 30 and fix the light emitting element 30 during a process of manufacturing the display device 10 .

[0124] A plurality of contact electrodes 26 and 27 may be provided on the second insulating layer 52. The plurality of contact electrodes 26 and 27 may include a first contact electrode 26 and a second contact electrode 27.

[0125] The first and second contact electrodes 26 and 27 may have a shape extending in one direction in a plan view. Each of the first and second contact electrodes 26 and 27 may have a shape extending in the second direction DR2. The first and second contact electrodes 26 and 27 may be arranged to be spaced apart from each other and face each other in the first direction DR1. The first and second contact electrodes 26 and 27 may form a stripe pattern in the emission area EMA of each sub-pixel SPX.

[0126] The first contact electrode 26 and the second contact electrode 27 may be in contact with the light emitting element 30 and the plurality of electrodes 21 and 22, respectively. The first contact electrode 26 may be provided on the first electrode 21, and the second contact electrode 27 may be provided on the second electrode 22. The first contact electrode 26 and the second contact electrode 27 may be provided to partially cover the upper surfaces of the first electrode 21 and the second electrode 22 while being in contact with one end and the other end of the light emitting element 30, respectively.

[0127] One end of the light emitting element 30 exposed by the second insulating layer 52 may be electrically connected to the first electrode 21 through the first contact electrode 26 , and the other end of the light emitting element 30 exposed by the second insulating layer 52 may be electrically connected to the second electrode 22 through the second contact electrode 27 .

[0128] A third insulating layer 53 is provided on the first contact electrode 26. The third insulating layer 53 can electrically insulate the first contact electrode 26 from the second contact electrode 27. The third insulating layer 53 can be provided to cover the first contact electrode 26, but may not be provided on the other end of the light emitting element 30 so that the light emitting element 30 can contact the second contact electrode 27.

[0129] The second contact electrode 27 is provided on the second electrode 22, the second insulating layer 52, and the third insulating layer 53. The second contact electrode 27 may contact the other end of the light emitting element 30 and the exposed upper surface of the second electrode 22. The other end of the light emitting element 30 may be electrically connected to the second electrode 22 through the second contact electrode 27.

[0130] The first contact electrode 26 and the second contact electrode 27 may include a conductive material. For example, the contact electrodes 26 and 27 may include ITO, IZO, ITZO, aluminum (Al), etc. As an example, the contact electrodes 26 and 27 may include a transparent conductive material, but are not limited thereto.

[0131] The fourth insulating layer 54 may be completely disposed on the substrate 11. The fourth insulating layer 54 may be used to protect components disposed on the substrate 11 from external environments.

[0132] Each of the first insulating layer 51, the second insulating layer 52, the third insulating layer 53 and the fourth insulating layer 54 may include an inorganic insulating material or an organic insulating material. In an embodiment, the first insulating layer 51, the second insulating layer 52, the third insulating layer 53 and the fourth insulating layer 54 may include an inorganic insulating material or an organic insulating material. x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), an inorganic insulating material such as aluminum oxide (Al2O3) or aluminum nitride (AlN). Alternatively, the first insulating layer 51, the second insulating layer 52, the third insulating layer 53 and the fourth insulating layer 54 may include an organic insulating material such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene resin, a polyphenylene sulfide resin, a benzocyclobutene, a cardo resin, a siloxane resin, a silsesquioxane resin, polymethyl methacrylate, polycarbonate or a polymethyl methacrylate-polycarbonate synthetic resin. However, the disclosure is not limited thereto.

[0133] Figure 4 is a partial cross-sectional view of a display device according to another embodiment.

[0134] Reference Figure 4, the third insulating layer 53 may be omitted in the display device 10. A portion of the second contact electrode 27_1 may be directly disposed on the second insulating layer 52. The first contact electrode 26 and the second contact electrode 27_1 may be spaced apart from each other on the second insulating layer 52. In an embodiment, even if the third insulating layer 53 is omitted, the second insulating layer 52 may perform the function of fixing the light emitting element 30 by including an organic insulating material. In addition, the first contact electrode 26 and the second contact electrode 27_1 may be formed simultaneously by a patterning process. In addition to the third insulating layer 53 being further omitted, Figure 4 Examples and Figure 3 Hereinafter, repeated description will be omitted.

[0135] Figure 5 is a schematic perspective view of a light emitting element according to an embodiment. Figure 6 yes Figure 5 Side view of the light-emitting element.

[0136] The light-emitting element 30 may be a light-emitting diode. Specifically, the light-emitting element 30 may have a size in micrometers or nanometers and may be an inorganic light-emitting diode made of an inorganic material. The inorganic light-emitting diode can be aligned between two electrodes that form a polarity when an electric field is formed in a specific direction between the two electrodes facing each other. The light-emitting element 30 can be aligned between the two electrodes by the electric field formed on the two electrodes.

[0137] Reference Figure 5 , the light emitting element 30 according to the embodiment may have a shape extending in one direction X. For example, the light emitting element 30 may have a column shape or a rod shape. However, the shape of the light emitting element 30 is not limited thereto, and the light emitting element 30 may have a polygonal prism shape such as a rectangular parallelepiped or a hexagonal prism extending in one direction X.

[0138] The light emitting element 30 may include a semiconductor layer doped with impurities of any conductivity type (eg, p-type or n-type), and the semiconductor layer may receive an electrical signal applied from an external power source to emit light of a specific wavelength band.

[0139] The light emitting element 30 may extend in a direction X and include a first end 30S1 and a second end 30S2 that are inclined relative to the direction X. The light emitting element 30 may include a first surface 30S1, a second surface 30S2, and a third surface 30S3. Hereinafter, for ease of explanation, the terms first surface 30S1 and first end 30S1, and second surface 30S2 and second end 30S2 may be used interchangeably.

[0140] The first surface 30S1 may be the first end 30S1 of the light emitting element 30, the second surface 30S2 may be the second end 30S2 of the light emitting element 30, and the third surface 30S3 may be a side surface of the light emitting element 30 connecting the first surface 30S1 and the second surface 30S2 to each other or an outer surface of the light emitting element 30 extending in one direction X.

[0141] The first end 30S1 and the second end 30S2 may be inclined relative to one direction X, which is the extending direction of the light emitting element 30. The inclined extending surface of the first end 30S1 may be inclined relative to one direction X, which is the extending direction of the light emitting element 30. Similarly, the inclined extending surface of the second end 30S2 may be inclined relative to one direction X, which is the extending direction of the light emitting element 30.

[0142] The inclined surface of the first end 30S1 may be inclined toward one side (e.g., the upper portion in the figure) in the other direction Y relative to another direction Y that intersects perpendicularly with the center portion of the light-emitting element 30 in the one direction X. Similarly, the inclined surface of the second end 30S2 may be inclined toward one side (e.g., the upper portion in the figure) in the other direction Y. That is, the first end 30S1 and the second end 30S2 of the light-emitting element 30 may each be inclined toward one side in the other direction Y relative to another direction Y that intersects perpendicularly with the center portion of the light-emitting element 30 in the one direction X. Therefore, the inclined surface of the first end 30S1 and the inclined surface of the second end 30S2 of the light-emitting element 30 may be inclined in a direction in which the inclined surfaces of the first end 30S1 and the second end 30S2 of the light-emitting element 30 are closer to each other on one side of the other direction Y and farther away from each other on the other side of the other direction Y. The third surface 30S3 may extend parallel to the one direction X, which is the extension direction of the light-emitting element 30.

[0143] Although not limited thereto, the planar shape of the first end 30S1 may be an ellipse. Similarly, the planar shape of the second end 30S2 may be an ellipse. However, the surface shapes of the first end 30S1 and the second end 30S2 are not limited thereto and may be rounded rectangular shapes or other polygonal shapes.

[0144] Figure 6 : is a cross-sectional view of the light emitting element 30 taken along one direction X which is the extending direction of the light emitting element 30. Figure 5 and Figure 6 A cross section of the light emitting element 30 taken along a direction X may include a first edge 30L1 , a second edge 30L2 , a first side edge 30SL1 , and a second side edge 30SL2 .

[0145] The first side 30L1 may be a side extending in one direction X. The second side 30L2 may be a side extending in one direction X and opposite to the first side 30L1. The first side 30L1 and the second side 30L2 may be parallel, and a width W1 between the first side 30L1 and the second side 30L2 may be substantially constant.

[0146] The first side 30SL1 may be a side connecting one end of the first side 30L1 and one end of the second side 30L2 to each other, and the second side 30SL2 may be a side connecting the other end of the first side 30L1 and the other end of the second side 30L2 to each other.

[0147] The second side 30L2 may be positioned to overlap the first side 30L1 in another direction Y that is perpendicular to the one direction X. In addition, the lengths of the first side 30L1 and the second side 30L2 in the one direction X may be different from each other. In an embodiment, the length h1 of the first side 30L1 in the one direction X may be longer than the length h2 of the second side 30L2 in the one direction X. Since the second side 30L2 overlaps the first side 30L1 in the other direction Y, but the length h2 of the second side 30L2 is less than the length h1 of the first side 30L1, the first side 30SL1 and the second side 30SL2 may be inclined at an acute angle from the first side 30L1.

[0148] Specifically, the first side 30L1 and the first side 30SL1 may be inclined to each other at a first inner angle θ1. The first inner angle θ1 formed between the first side 30L1 and the first side 30SL1 may be an acute angle. Although not limited thereto, the first inner angle θ1 may be 75° or less.

[0149] The first side 30L1 and the second side 30SL2 may be inclined to each other at a second inner angle θ2. The second inner angle θ2 formed between the first side 30L1 and the second side 30SL2 may be an acute angle. Although not limited thereto, the second inner angle θ2 may be 75° or less.

[0150] In an embodiment, the size of the first inner angle θ1 and the size of the second inner angle θ2 may be the same as each other. That is, the light emitting element 30 may include a shape that is symmetrical with respect to a cut surface that vertically passes through the center portion of the light emitting element 30 in one direction X. However, the disclosure is not limited thereto, and the size of the first inner angle θ1 and the size of the second inner angle θ2 may be different from each other.

[0151] As described above, when the sizes of the first inner angle θ1 and the second inner angle θ2 are acute angles, it is possible to prevent the residual film of the second insulating layer 52 from remaining in the area adjacent to the first end 30S1 and the second end 30S2 of the light-emitting element 30 in the process of etching the second insulating layer 52 of the display device 10 to be described later.

[0152] Figure 7 yes Figure 3 An enlarged cross-sectional view of region P.

[0153] Reference Figure 7 as well as Figure 3 and Figure 5 The light emitting element 30 may be disposed on the first insulating layer 51 disposed between the first electrode 21 and the second electrode 22. A direction X, which is one of the extension directions of the light emitting element 30, may be parallel to the upper surface of the substrate 11. In other words, the light emitting element 30 may be disposed such that its extension direction is parallel to the upper surface of the substrate 11.

[0154] The first side 30L1 of the light emitting element 30 may be disposed to face the first insulating layer 51. The second side 30L2 of the light emitting element 30 may be disposed to face the side opposite to the side facing the first insulating layer 51, that is, the upper portion. That is, the light emitting element 30 may be disposed on the first insulating layer 51 such that the first side 30L1, which is a long side, is disposed at the lower portion and the second side 30L2, which is a short side, faces the upper portion.

[0155] As described above, in the arrangement in which the first side 30L1 (which is the long side in the cross-sectional shape of the light-emitting element 30) is provided in the lower portion and the second side 30L2 (which is the short side) is provided in the upper portion, since the dielectrophoretic force applied to the first side 30L1 having a relatively large area is strong in the process of aligning the light-emitting element 30 using the dielectrophoretic force, the light-emitting element 30 can be aligned so that the first side 30L1 of the light-emitting element 30 is positioned in the lower portion.

[0156] The first end 30S1 of the light-emitting element 30 may overlap with the upper surface of the first insulating layer 51 disposed on the first electrode 21 in the third direction DR3, and the second end 30S2 of the light-emitting element 30 may overlap with the first insulating layer 51 disposed on the second electrode 22 in the third direction DR3. In other words, the first end 30S1 of the light-emitting element 30 may overlap with the first electrode 21 in the third direction DR3, and the second end 30S2 thereof may overlap with the second electrode 22 in the third direction DR3. The first side 30L1 of the light-emitting element 30 may at least partially contact the upper surface of the first insulating layer 51.

[0157] Hereinafter, when a surface or a line extends on one side in the third direction DR3 while the direction in which the surface or line extends in the first direction DR1 based on the upper surface of the substrate 11 parallel to the first direction DR1 increases, it is defined herein as "the slope of the surface or line is in the positive direction". That is, when the surface or line extends to the "upper right or lower left" in the drawing, the slope of the surface or line may be defined as the positive direction. On the contrary, when the surface or line extends on the other side in the third direction DR3 while the direction in which the surface or line extends in the first direction DR1 based on the upper surface of the substrate 11 parallel to the first direction DR1 increases, it is defined herein as "the slope of the surface or line is in the negative direction". That is, when the surface or line extends to the "lower right or upper left" in the drawing, the slope of the surface or line may be defined as the negative direction.

[0158] The inclined surface of the first end 30S1 of the light-emitting element 30 may be inclined in a positive direction relative to the upper surface of the substrate 11. The inclined surface of the second end 30S2 of the light-emitting element 30 may be inclined in a negative direction relative to the upper surface of the substrate 11. However, the disclosure is not limited thereto, and the inclined surface of the first end 30S1 of the light-emitting element 30 may also be inclined in a negative direction relative to the upper surface of the substrate 11. Similarly, the inclined surface of the second end 30S2 of the light-emitting element 30 may also be inclined in a positive direction relative to the upper surface of the substrate 11. That is, the inclined surface of the first end 30S1 and the inclined surface of the second end 30S2 of the light-emitting element 30 may be inclined in a positive direction or a negative direction, respectively, relative to the upper surface of the substrate 11, and the directions in which the inclined surfaces of the first end 30S1 and the second end 30S2 are inclined relative to the upper surface of the substrate 11 may be opposite to each other.

[0159] The first side 30SL1 of the light emitting element 30 may be inclined at an acute angle to the upper surface of the first insulating layer 51 . Similarly, the second side 30SL2 of the light emitting element 30 may be inclined at an acute angle to the upper surface of the first insulating layer 51 .

[0160] The second insulating layer 52 may be provided on the light emitting element 30. The second insulating layer 52 may be provided on the second side 30L2 of the light emitting element 30. The second insulating layer 52 may be in contact with the second side 30L2 of the light emitting element 30.

[0161] The second insulating layer 52 may be disposed on the light emitting element 30 to expose the first end 30S1 and the second end 30S2 of the light emitting element 30 in the third direction DR3. The second insulating layer 52 may not overlap the first end 30S1 and the second end 30S2 of the light emitting element 30 in the third direction DR3. The second insulating layer 52 may expose the first side 30SL1 and the second side 30SL2 of the light emitting element 30. In other words, the second insulating layer 52 may not overlap the first side 30SL1 and the second side 30SL2.

[0162] The first contact electrode 26 may be provided on the first insulating layer 51. The first contact electrode 26 may be in contact with the first electrode 21 and the first end 30S1 of the light-emitting element 30. That is, the first contact electrode 26 may be in contact with the first electrode 21 and the first side 30SL1 of the light-emitting element 30. The first contact electrode 26 may be in contact with each of the first electrode 21 and the first side 30SL1 of the light-emitting element 30 to electrically connect the first electrode 21 and the light-emitting element 30 to each other.

[0163] The second contact electrode 27 may be provided on the first insulating layer 51. The second contact electrode 27 may be in contact with the second electrode 22 and the second end 30S2 of the light-emitting element 30. That is, the second contact electrode 27 may be in contact with the second electrode 22 and the second side 30SL2 of the light-emitting element 30. The second contact electrode 27 may be in contact with each of the second electrode 22 and the second side 30SL2 of the light-emitting element 30 to electrically connect the second electrode 22 and the light-emitting element 30 to each other.

[0164] In the embodiment, since the first end 30S1 and the second end 30S2 of the light-emitting element 30 extending in one direction are formed to have a predetermined angle with respect to the upper surface of the first insulating layer 51 on which the light-emitting element 30 is disposed, the light-emitting element 30 may have a first side 30SL1 and a second side 30SL2 inclined at an acute angle from the first side 30L1 in a cross-sectional shape. When the first side 30SL1 and the second side 30SL2 are formed to be inclined from the first side 30L1, the lengths of the first side 30SL1 and the second side 30SL2 may be greater than the width W1 between the first side 30L1 and the second side 30L2. Therefore, the areas of the first end 30S1 and the second end 30S2 may be greater than the areas of the first end 30S1 and the second end 30S2 formed perpendicular to the third surface 30S3. That is, in the light emitting element 30 having the same width W1, when the first end 30S1 and the second end 30S2 are inclined relative to the first side 30L1, the contact area between the first end 30S1 and the second end 30S2 and the first contact electrode 26 and the second contact electrode 27 can be increased, thereby improving contact reliability.

[0165] Furthermore, since first side 30SL1 and second side 30SL2 are formed to be inclined from first side 30L1, it is possible to prevent a residual film of the material layer of second insulating layer 52 from being generated in regions adjacent to both ends of light-emitting element 30 during the process of patterning second insulating layer 52 disposed on light-emitting element 30. Specifically, to form patterned second insulating layer 52, the second insulating material layer can be completely applied onto first insulating layer 51, and second insulating layer 52 can be patterned through an etching process. During the process, since both ends 30S1 and 30S2 of light-emitting element 30 are formed to be inclined, and light-emitting element 30 is arranged on first insulating layer 51 to be inclined inwardly of light-emitting element 30, an etchant can be uniformly sprayed onto the second insulating material layer disposed adjacent to both ends 30S1 and 30S2 of light-emitting element 30, thereby preventing a residual film of the second insulating material layer from remaining on both ends 30S1 and 30S2 of light-emitting element 30. Therefore, the contact reliability between the contact electrodes 26 and 27 in contact with both ends 30S1 and 30S2 of the light emitting element 30 and the light emitting element 30 can be improved.

[0166] Figure 8a is a cross-sectional view of a light emitting element according to an embodiment, and is taken along Figure 5 A sectional view taken along line VIII-VIII'.

[0167] Reference Figure 8a , the light-emitting element 30 may include a semiconductor core and an insulating layer 38 surrounding the semiconductor core. The semiconductor core of the light-emitting element 30 may include a first semiconductor layer 31, a second semiconductor layer 32, an active layer 36, and an electrode layer 37. In an embodiment, the light-emitting element 30 may have a shape extending in a direction X, and may have a structure in which each layer of the semiconductor core is stacked in the direction X, which is the extending direction of the light-emitting element 30. Each interface between the first semiconductor layer 31, the active layer 36, the second semiconductor layer 32, and the electrode layer 37 may be parallel to another direction Y that intersects perpendicularly with the one direction X, but is not limited thereto. In the specification, "the interfaces between the multiple layers constituting the semiconductor core are parallel to another direction Y" may include not only a complete form in which the interfaces between the multiple layers are planar, but also a form in which the interfaces between the multiple layers can be considered to be substantially planar. For example, this may include a case in which, even when there are bends or irregularities in some portions of the interfaces between the multiple layers, the bends or irregularities are generally on a single plane. In addition, this may include a case where, even if the interfaces between the multiple layers are not completely parallel to another direction Y perpendicular to one direction X which is the extension direction of the light-emitting element 30, the interfaces between the multiple layers can be observed to be substantially parallel to the other direction Y when observed with the naked eye.

[0168] The first semiconductor layer 31 may be an n-type semiconductor. As an example, when the light emitting element 30 emits light in the blue wavelength band, the first semiconductor layer 31 may include a semiconductor having a chemical formula of Al x Ga y In 1-x-y The first semiconductor layer 31 may be a semiconductor material having a value of N (0≤x≤1, 0≤y≤1, and 0≤x+y≤1). For example, the semiconductor material may be any one or more of AlGaInN, GaN, AlGaN, InGaN, AlN, and InN doped with an n-type dopant. The first semiconductor layer 31 may be doped with an n-type dopant, such as Si, Ge, Se, Sn, etc. In an embodiment, the first semiconductor layer 31 may be n-GaN doped with n-type Si.

[0169] The second semiconductor layer 32 may be provided to be spaced apart from the first semiconductor layer 31 in the extension direction X of the light emitting element 30. The second semiconductor layer 32 may be a p-type semiconductor, and as an example, when the light emitting element 30 emits light in the blue or green wavelength band, the second semiconductor layer 32 may include a semiconductor having a chemical formula of Al x Ga y In 1-x-y The semiconductor material may be a semiconductor material of N (0≤x≤1, 0≤y≤1, and 0≤x+y≤1). For example, the semiconductor material may be any one or more of AlGaInN, GaN, AlGaN, InGaN, AlN, and InN doped with a p-type dopant. The second semiconductor layer 32 may be doped with a p-type dopant, such as Mg, Zn, Ca, Ba, etc. In an embodiment, the second semiconductor layer 32 may be p-GaN doped with p-type Mg.

[0170] Meanwhile, the drawings illustrate that the first semiconductor layer 31 and the second semiconductor layer 32 are each constructed as one layer, but the disclosure is not limited thereto. According to some embodiments, the first semiconductor layer 31 and the second semiconductor layer 32 may further include a larger number of layers, for example, a cap layer or a tensile strain barrier reduction (TSBR) layer, depending on the material of the active layer 36 to be described later.

[0171] The active layer 36 is disposed between the first semiconductor layer 31 and the second semiconductor layer 32. The active layer 36 may include a material having a single quantum well structure or a multi-quantum well structure. When the active layer 36 includes a material having a multi-quantum well structure, the active layer 36 may have a structure in which multiple quantum layers and well layers are alternately stacked. The active layer 36 may emit light through the recombination of electron-hole pairs according to an electrical signal applied through the first semiconductor layer 31 and the second semiconductor layer 32. As an example, when the active layer 36 emits light in the blue wavelength band, the active layer 36 may include a material such as AlGaN or AlGaInN. In particular, when the active layer 36 has a structure in which quantum layers and well layers are alternately stacked in a multi-quantum well structure, the quantum layers may include a material such as AlGaN or AlGaInN, and the well layers may include a material such as GaN or AlInN. In an embodiment, the active layer 36 may include AlGaInN as a quantum layer and AlInN as a well layer to emit blue light having a central wavelength band of 450 nm to 495 nm as described above.

[0172] However, the disclosure is not limited thereto, and the active layer 36 may have a structure in which one type of semiconductor material having a large energy band gap and a semiconductor material having a small energy band gap are alternately stacked with each other, and may include other Group III to Group V semiconductor materials according to the wavelength band of emitted light. The light emitted by the active layer 36 is not limited to light in the blue wavelength band, and in some cases, the active layer 36 may emit light in the red and green wavelength bands.

[0173] At the same time, the light emitted from the active layer 36 can be emitted not only to both end surfaces of the light emitting element 30 in the extension direction X, but also to both side surfaces of the light emitting element 30. For example, the light generated from the active layer 36 of the light emitting element 30 can be emitted through the first surface 30S1, the second surface 30S2, and the third surface 30S3 of the light emitting element 30. That is, the direction of the light emitted from the light emitting element 30 is not limited to one direction.

[0174] The electrode layer 37 may be provided on the other side of the second semiconductor layer 32 opposite to the side on which the active layer 36 is provided, along the extension direction X of the light emitting element 30. That is, the semiconductor core may have a structure in which the electrode layer 37, the second semiconductor layer 32, the active layer 36, and the first semiconductor layer 31 are sequentially stacked along one direction X, which is the extension direction X of the light emitting element 30.

[0175] The electrode layer 37 may be an ohmic contact electrode. However, the disclosure is not limited thereto, and the electrode layer 37 may also be a Schottky contact electrode. The light emitting element 30 may include at least one electrode layer 37. Although Figure 8aAlthough the light emitting element 30 is shown to include one electrode layer 37, the disclosure is not limited thereto. In some cases, the light emitting element 30 may include a larger number of electrode layers 37, or may omit the electrode layer 37. Even if the number of electrode layers 37 is changed or the light emitting element 30 includes another structure, the description of the light emitting element 30 to be described later may also apply.

[0176] When the light emitting element 30 is electrically connected to the electrodes 21 and 22 or the contact electrodes 26 and 27 in the display device 10 according to the embodiment, the electrode layer 37 can reduce the resistance between the light emitting element 30 and the electrodes 21 and 22 or the contact electrodes 26 and 27. The electrode layer 37 may include a conductive metal. For example, the electrode layer 37 may include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). In addition, the electrode layer 37 may include a semiconductor material doped with an n-type or p-type dopant. The electrode layer 37 may include the same material or different materials, but is not limited thereto.

[0177] Insulating layer 38 is provided to surround the outer surface of the semiconductor core. In an embodiment, insulating layer 38 may be provided to surround at least the outer surface of active layer 36 and may extend in a direction X in which light-emitting element 30 extends. Insulating layer 38 may function as a protective member. As an example, insulating layer 38 may be formed to surround a portion of the side surface of the member, but may be formed to expose both ends of light-emitting element 30 in the extension direction X.

[0178] Although the drawings illustrate that insulating layer 38 is formed to extend in the extension direction X of light-emitting element 30 so as to cover the side surfaces from first semiconductor layer 31 to electrode layer 37, the disclosure is not limited thereto. Insulating layer 38 may cover only the outer surfaces of some semiconductor layers including active layer 36, or may cover only a portion of electrode layer 37 so that the outer surface of each electrode layer 37 is partially exposed. Insulating layer 38 may also be formed so that its upper surface is rounded in cross section in a region adjacent to at least one end of light-emitting element 30.

[0179] The thickness of the insulating layer 38 may be in the range of 10 nm to 1.0 μm, but is not limited thereto. The thickness of the insulating layer 38 is preferably about 40 nm.

[0180] In some embodiments, the insulating layer 38 is provided along the outer surface of the semiconductor core, but its thickness may not be uniform. The insulating layer 38 may have different thicknesses on the outer surfaces of the first semiconductor layer 31, the active layer 36, the second semiconductor layer 32, and the electrode layer 37. This may be because the insulating layer 38 has different thicknesses depending on the location due to etching the insulating layer 38 during the process of manufacturing the light-emitting element 30 or partially etching the insulating layer 38 after the light-emitting element 30 is provided on the display device 10.

[0181] The insulating layer 38 may include a material having insulating properties, such as silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum nitride (AlN), and aluminum oxide (Al2O3). Therefore, it is possible to prevent electrical short circuits that may occur when active layer 36 directly contacts an electrode through which an electrical signal is transmitted to light-emitting element 30. In addition, since insulating layer 38 protects the outer surface of the semiconductor core including active layer 36, it is possible to prevent a decrease in light-emitting efficiency.

[0182] In some embodiments, the outer surface of insulating layer 38 may be surface treated. Light-emitting elements 30 can be aligned by spraying them onto the electrodes while dispersed in a predetermined ink. To maintain the dispersed state of light-emitting elements 30 and prevent them from agglomerating with adjacent light-emitting elements 30 in the ink, the surface of insulating layer 38 may be treated with a hydrophobic or hydrophilic treatment.

[0183] Reference Figure 5 and Figure 8a In an embodiment, the electrode layer 37 may be positioned in one end region where the first end 30S1 of the light-emitting element 30 is positioned, and the first semiconductor layer 31 may be positioned in the other end region where the second end 30S2 of the light-emitting element 30 is positioned. The first end 30S1 of the light-emitting element 30 may include the outer surface of the electrode layer 37, and the second end 30S2 thereof may include the outer surface of the first semiconductor layer 31. The outer surface of the electrode layer 37 and the outer surface of the first semiconductor layer 31 may be surfaces that are not covered by the insulating layer 38 and are exposed to the outside. In an embodiment in which the first end 30S1 and the second end 30S2 of the light-emitting element 30 are inclined relative to a direction X that is the extending direction of the light-emitting element 30, the outer surfaces of the electrode layer 37 and the first semiconductor layer 31 may each be inclined relative to the one direction X.

[0184] As described above, the acute angles (first internal angle θ1 or second internal angle θ2 ) at which the first end 30S1 and the second end 30S2 are inclined relative to the one direction X, which is the extending direction of the light emitting element 30 , are respectively 75° or less.

[0185] Figure 8b It is shown along Figure 5 FIG. 1 is a cross-sectional view of another example of the light emitting element taken along line VIII-VIII′.

[0186] Reference Figure 5 and Figure 8b The light emitting element 30_1 according to the embodiment is different from the light emitting element 30_1 according to the embodiment Figure 8a The light emitting element of the embodiment is different in that the second semiconductor layer 32 can be further positioned in an end region where the first end 30S1 of the light emitting element 30_1 is positioned. That is, the second semiconductor layer 32 of the light emitting element 30_1 can also constitute the first end 30S1 of the light emitting element 30_1.

[0187] Specifically, the electrode layer 37 and the second semiconductor layer 32 may be positioned in one end region where the first end 30S1 of the light emitting element 30_1 according to the embodiment is positioned. The first end 30S1 of the light emitting element 30_1 may include the outer surface of the electrode layer 37 and the second semiconductor layer 32. The outer surface of the electrode layer 37 and a portion of the second semiconductor layer 32 of the light emitting element 30_1 (i.e., the outer surface of the second semiconductor layer 32) may be inclined relative to a direction X. The outer surface of the electrode layer 37 and the outer surface of the second semiconductor layer 32 may be surfaces that are not covered by the insulating layer 38 and are exposed to the outside of the light emitting element 30_1.

[0188] As an example, when the inclination angles (eg, the first inner angle θ1_1 or the second inner angle θ2_1) of the two ends 30S1 and 30S2 of the light emitting element 30_1 are formed to be small, in order to Figure 7 When the process of patterning the second insulating layer 52 provided on the light-emitting element 30_1 is described to prevent the second insulating material layer from remaining on the two ends 30S1 and 30S2 of the light-emitting element 30_1, the light-emitting element 30_1 in which the first end 30S1 includes the electrode layer 37 and the outer surface of the second semiconductor layer 32 can be formed as in the embodiment.

[0189] As another example, when the inclination angles of the two ends 30S1 and 30S2 of the light emitting element 30_1 (eg, the first inner angle θ1_1 or the second inner angle θ2_1) are equal to Figure 8aThe inclination angle is similar to that of the embodiment, but when the thickness of the electrode layer 37 in one direction X is thin, in the process of cutting the two ends 30S1 and 30S2 of the light-emitting element 30 to be inclined, a partial region of the second semiconductor layer 32 located at one end region where the first end 30S1 is located is also cut, so that the light-emitting element 30_1 in which the first end 30S1 includes the outer surface of the electrode layer 37 and the second semiconductor layer 32 can be formed as in the embodiment. A detailed description of the process of cutting the two ends 30S1 and 30S2 of the light-emitting element 30_1 to be inclined will be described later with reference to other drawings illustrating a method of manufacturing a light-emitting element.

[0190] Although not shown in the drawings, when the light-emitting element 30_1 according to the embodiment is provided between the first electrode 21 and the second electrode 22 on the substrate 11, the electrode layer 37 and the second semiconductor layer 32 may constitute the first end 30S1 of the light-emitting element 30_1, and the first semiconductor layer 31 may constitute the second end 30S2 thereof. Therefore, the first contact electrode 26 may be in contact with the first electrode 21, the electrode layer 37, and the second semiconductor layer 32, and the second contact electrode 27 may be in contact with the second electrode 22 and the first semiconductor layer 31.

[0191] Figure 8c It is shown along Figure 5 FIG. 1 is a cross-sectional view of another example of the light emitting element taken along line VIII-VIII′.

[0192] Reference Figure 5 and Figure 8c The light emitting element 30_2 according to the embodiment and the light emitting element 30_2 according to the embodiment Figure 8b The light emitting element of the embodiment is different in that the electrode layer 37 is positioned in the region of the first end 30S1 of the light emitting element 30_2, but the second semiconductor layer 32 is not positioned therein, and the thickness of the electrode layer 37 in one direction X is formed to be greater than Figure 8b The thickness is thick.

[0193] Specifically, although the inclination angles (e.g., the first inner angle θ1_1 or the second inner angle θ2_1) of the two ends 30S1 and 30S2 of the light emitting element 30_2 according to the embodiment are formed to be small, the thickness of the electrode layer 37 in one direction X can be thick. Therefore, although the first end 30S1 of the light emitting element 30_2 has the same Figure 8b The tilt angle of the light emitting element 30_1 is the same as that of the light emitting element 30_2, but only the electrode layer 37 may be positioned in the region of the first end 30S1 of the light emitting element 30_2. Therefore, the electrode layer 37 may constitute the first end 30S1 of the light emitting element 30_2.

[0194] When the light-emitting element 30_2 according to the embodiment is provided between the first electrode 21 and the second electrode 22 on the substrate 11, the thickness of the electrode layer 37 positioned in the first end 30S1 of the light-emitting element 30_2 in one direction X is sufficiently formed, so that the first contact electrode 26 can be in contact with the electrode layer 37 without being in contact with the second semiconductor layer 32 of the light-emitting element 30_2. Therefore, since the electrode layer 37 is provided between the first contact electrode 26 and the second semiconductor layer 32 in the one end region of the light-emitting element 30_2, the resistance between the light-emitting element 30_2 and the first contact electrode 26 can be reduced.

[0195] Figure 9 yes Figure 3 The settings include Figure 8a An enlarged cross-sectional view of region Q of a light-emitting element.

[0196] Figure 9 The cross section of the display device 10 is provided with Figure 8a An enlarged view of a portion of the light emitting element 30. Figure 9 as well as Figure 5 and Figure 8a As described above, the light emitting element 30 according to the embodiment may be provided on the first insulating layer 51 between the first electrode 21 and the second electrode 22 .

[0197] The first semiconductor layer 31, the active layer 36, the second semiconductor layer 32, and the electrode layer 37 included in the semiconductor core may be sequentially stacked in the first direction DR1. Each interface between the first semiconductor layer 31, the active layer 36, the second semiconductor layer 32, and the electrode layer 37 may be perpendicular to the first direction DR1.

[0198] The first end 30S1 of the light emitting element 30 may be formed of the electrode layer 37, and the second end 30S2 thereof may be formed of the first semiconductor layer 31. In an embodiment, the first contact electrode 26 may contact the first electrode 21 and the electrode layer 37, and the second contact electrode 27 may contact the second electrode 22 and the first semiconductor layer 31.

[0199] Figures 10 to 16 It shows the manufacturing Figure 8a A cross-sectional view of the process of producing a light-emitting element.

[0200] First, refer to Figure 10 , a plurality of semiconductor structures 3000 are formed on the base substrate 1100 .

[0201] Specifically, the base substrate 1100 may include a sapphire substrate (Al2O3) and a transparent substrate such as glass. However, the base substrate 1100 is not limited thereto and may be formed as a conductive substrate such as GaN, SiC, ZnO, Si, GaP, and GaAs. Hereinafter, a case where the base substrate 1100 is a sapphire substrate (Al2O3) will be described as an example.

[0202] A plurality of semiconductor layers are formed on the base substrate 1100. A plurality of semiconductor layers grown by epitaxial deposition can be formed by growing seed crystals. Here, the method of forming the semiconductor layer can be electron beam deposition, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporation, sputtering, metal organic chemical vapor deposition (MOCVD), etc., and preferably, the semiconductor layer can be formed by metal organic chemical vapor deposition (MOCVD). However, the disclosure is not limited thereto.

[0203] The precursor material for forming a plurality of semiconductor layers can generally be selected to form a target material without specific limitation. As an example, the precursor material can be a metal precursor including an alkyl group (such as a methyl group or an ethyl group). For example, the precursor material can be a compound such as trimethylgallium (Ga(CH3)3), trimethylaluminum (Al(CH3)3) or triethyl phosphate ((C2H5)3PO4), but is not limited thereto. Hereinafter, the description of the method for forming a plurality of semiconductor layers, process conditions, etc. will be omitted, and the order of the method for manufacturing the stacked structure of the light-emitting element 30 or the light-emitting element 30 will be described in detail.

[0204] The semiconductor structure 3000 formed on the base substrate 1100 may include a plurality of unit semiconductor structures 3000A, 3000B, 3000C, and 3000D. In an embodiment, the semiconductor structure 3000 may include a first unit semiconductor structure 3000A, a second unit semiconductor structure 3000B, a third unit semiconductor structure 3000C, and a fourth unit semiconductor structure 3000D. The first unit semiconductor structure 3000A, the second unit semiconductor structure 3000B, the third unit semiconductor structure 3000C, and the fourth unit semiconductor structure 3000D may be sequentially stacked on the base substrate 1100. Each of the unit semiconductor structures 3000A, 3000B, 3000C, and 3000D may have the same stacking structure. Hereinafter, the stack structure of the first unit semiconductor structure 3000A will be described, and the stack structures of the second to fourth unit semiconductor structures 3000B, 3000C, and 3000D will be replaced with the description of the stack structure of the first unit semiconductor structure 3000A.

[0205] The first unit semiconductor structure 3000A is formed on the base substrate 1100. The first unit semiconductor structure 3000A may include a buffer material layer 1200, a first semiconductor material layer 3100, an active layer 3600, a second semiconductor material layer 3200, and an electrode material layer 3700 sequentially stacked on the base substrate 1100.

[0206] The buffer material layer 1200 may be provided to reduce the difference in lattice constant between the first semiconductor material layer 3100 and the base substrate 1100. In addition, the buffer material layer 1200 may be used to protect the first semiconductor material layer 3100 during the process of cutting the semiconductor rod to manufacture the light-emitting element 30 (which will be described later). The buffer material layer 1200 may include an undoped semiconductor and may include a material that is substantially the same as the material of the first semiconductor material layer 3100 but is not doped with an n-type or p-type dopant. In an embodiment, the buffer material layer 1200 may be made of at least one of undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, but is not limited thereto.

[0207] A plurality of material layers disposed on the buffer material layer 1200, for example, the first semiconductor material layer 3100, the active layer 3600, the second semiconductor material layer 3200, and the electrode material layer 3700, may be formed by performing conventional processes as described above. Each of the first semiconductor material layer 3100, the active layer 3600, the second semiconductor material layer 3200, and the electrode material layer 3700 included in the first unit semiconductor structure 3000A may correspond to each layer of the light-emitting element 30 according to the embodiment. That is, the first semiconductor material layer 3100, the active layer 3600, the second semiconductor material layer 3200, and the electrode material layer 3700 may respectively include the same materials as the first semiconductor layer 31, the active layer 36, the second semiconductor layer 32, and the electrode layer 37 of the light-emitting element 30.

[0208] The buffer material layer 1200 of the second unit semiconductor structure 3000B may be formed on the electrode material layer 3700 of the first unit semiconductor structure 3000A.

[0209] Similarly, the buffer material layer 1200 of the third unit semiconductor structure 3000C may be formed on the electrode material layer 3700 of the second unit semiconductor structure 3000B.

[0210] Similarly, the buffer material layer 1200 of the fourth unit semiconductor structure 3000D may be formed on the electrode material layer 3700 of the third unit semiconductor structure 3000C.

[0211] Next, refer to Figure 11The semiconductor structure 3000 is vertically etched to form semiconductor crystals 3000' (including a first semiconductor material layer 3100', an active layer 3600', a second semiconductor material layer 3200', and an electrode material layer 3700') spaced apart from each other. The semiconductor crystals 3000' may include a first unit semiconductor crystal 3000'A, a second unit semiconductor crystal 3000'B, a third unit semiconductor crystal 3000'C, and a fourth unit semiconductor crystal 3000'D formed by etching a first unit semiconductor structure 3000A, a second unit semiconductor structure 3000B, a third unit semiconductor crystal 3000'C, and a fourth unit semiconductor crystal 3000'D, respectively.

[0212] The vertical direction of etching the semiconductor structure 3000 may be parallel to the stacking direction of the multiple material layers included in the semiconductor structure 3000. The semiconductor structure 3000 may be etched using conventional methods. For example, the semiconductor structure 3000 may be etched by forming an etching mask layer on the semiconductor structure 3000 and etching the semiconductor structure 3000 along the etching mask layer in a direction perpendicular to one surface of the base substrate 1100. Separation holes may be formed between the semiconductor crystals 3000' through the etching process.

[0213] For example, the process of etching the semiconductor structure 3000 can be a dry etching method, a wet etching method, a reactive ion etching (RIE) method, an inductively coupled plasma reactive ion etching (ICP-RIE) method, etc. Since anisotropic etching is feasible in the dry etching method, the dry etching method can be suitable for vertical etching. When using the above etching methods, the etching etchant can be Cl2 or O2. However, the disclosure is not limited thereto.

[0214] In some embodiments, the semiconductor structure 3000 may be etched by mixing dry etching and wet etching. For example, after first performing etching in the depth direction by dry etching, the etched sidewalls may be placed on a plane perpendicular to the surface by wet etching, which is isotropic etching.

[0215] Next, an element rod Rod including an insulating film 3800 ′ partially surrounding the outer surface of the semiconductor crystal 3000 ′ is formed.

[0216] Reference Figure 12 and Figure 13 The element rod Rod may be formed by completely forming the insulating material layer 3800 on the semiconductor crystal 3000 ′ and partially removing the insulating material layer 3800 to expose the upper surface of the electrode material layer 3700 ′ of the fourth unit semiconductor crystal 3000 ′D.

[0217] Specifically, refer to Figure 12The insulating material layer 3800 may be formed entirely on the semiconductor crystal 3000'. The insulating material layer 3800 may also be formed on the side surfaces and upper surface of the semiconductor crystal 3000' and on the base substrate 1100 exposed in the separation hole of the semiconductor crystal 3000'.

[0218] The insulating material layer 3800 is an insulating material formed on the outer surface of the semiconductor crystal 3000' and can be formed by applying the insulating material to the outer surface of the vertically etched semiconductor crystal 3000' or immersing the outer surface of the vertically etched semiconductor crystal 3000' in the insulating material. However, the disclosure is not limited thereto. As an example, the insulating material layer 3800 can be formed by atomic layer deposition (ALD).

[0219] Next, refer to Figure 13 The insulating material layer 3800 may be partially removed to expose the upper surface of the electrode material layer 3700' of the fourth unit semiconductor crystal 3000'D. In the process of partially removing the insulating material layer 3800 to form the insulating film 3800', a process such as dry etching or etch-back as anisotropic etching may be performed.

[0220] The insulating film 3800' of the element rod Rod may be provided to completely surround the side surface of the semiconductor crystal 3000'. That is, the element rod Rod may include a structure in which the insulating film 3800' completely covers the side surface of the semiconductor crystal 3000'.

[0221] Next, refer to Figure 14 , the element rod Rod having the insulating film 3800' formed thereon is separated from the base substrate 1100. The method of separating the element rod Rod from the base substrate 1100 is not particularly limited. The process of separating the element rod Rod from the base substrate 1100 can be performed by a physical separation method or a chemical separation method.

[0222] Next, refer to Figure 15 and Figure 16 , a plurality of light emitting elements 30 are manufactured by cutting the element rod Rod.

[0223] Reference Figure 15 The element rod may include a plurality of unit element rods. The plurality of unit element rods may include a first unit element rod Rod 1, a second unit element rod Rod 2, a third unit element rod Rod 3, and a fourth unit element rod Rod 4. The first unit element rod Rod 1, the second unit element rod Rod 2, the third unit element rod Rod 3, and the fourth unit element rod Rod 4 may be structures corresponding to the first unit semiconductor structure 3000A, the second unit semiconductor structure 3000B, the third unit semiconductor structure 3000C, and the fourth unit semiconductor structure 3000D, respectively.

[0224] By cutting between the first unit element rod Rod1, the second unit element rod Rod2, the third unit element rod Rod3 and the fourth unit element rod Rod4, a Figure 16 The plurality of light-emitting elements 30 shown in FIG. have inclined ends. The method of cutting between the first unit element rod Rod1, the second unit element rod Rod2, the third unit element rod Rod3, and the fourth unit element rod Rod4 is not particularly limited. The method of cutting the buffer material layer 1200' and the electrode material layer 3700' disposed between the unit element rods Rod1, Rod2, Rod3, and Rod4 can be performed by a physical cutting method or a chemical cutting method. For example, a laser or a drill can be used to cut the ends of the buffer material layer 1200' and the electrode material layer 3700' disposed between the unit element rods Rod1, Rod2, Rod3, and Rod4 into an inclined state. The accompanying drawings show a process of separating each of the unit element rods Rod1, Rod2, Rod3, and Rod4 and manufacturing the light-emitting elements 30 having inclined ends at one and the other by irradiating a laser beam L onto the buffer material layer 1200' and the electrode material layer 3700' disposed between the unit element rods Rod1, Rod2, Rod3, and Rod4 using a laser.

[0225] The light-emitting element 30 according to the embodiment can be manufactured through the above-described process. The light-emitting element 30 manufactured in this manner can have various material layers stacked in the extension direction of the light-emitting element 30, for example, the first semiconductor layer 31, the active layer 36, the second semiconductor layer 32, and the electrode layer 37. The interfaces between the various material layers can be perpendicular to the extension direction of the light-emitting element 30. In addition, multiple light-emitting elements 30 in which both ends of the light-emitting element 30 are inclined relative to the extension direction of the light-emitting element 30 can be manufactured by cutting between the first unit element rod Rod1, the second unit element rod Rod2, the third unit element rod Rod3, and the fourth unit element rod Rod4.

[0226] Hereinafter, another embodiment will be described. In the following embodiment, repeated descriptions of components identical to those described above will be omitted or simplified, and components different from those described above will be mainly described.

[0227] Figure 17 It is shown along Figure 5 FIG. 1 is a cross-sectional view of another example of the light emitting element taken along line VIII-VIII′. Figure 18 yes Figure 3 The settings include Figure 17 An enlarged cross-sectional view of region Q of a light-emitting element.

[0228] Reference Figure 17 and Figure 18The light emitting element 30_3 according to the embodiment is different from the light emitting element 30_3 according to the embodiment. Figure 8a and Figure 9 The light emitting element of the embodiment of FIG. 1 is different in that a plurality of layers constituting the semiconductor core are inclined with respect to one direction X which is the extending direction of the light emitting element 30_3 .

[0229] Specifically, the semiconductor core of the light emitting element 30_3 may include a first semiconductor layer 31, an active layer 36, a second semiconductor layer 32, and an electrode layer 37 sequentially arranged in one direction X. Each interface between the first semiconductor layer 31, the active layer 36, the second semiconductor layer 32, and the electrode layer 37 may be inclined relative to the one direction X. The light emitting element 30_3 according to the embodiment may be formed by a process for manufacturing the light emitting element 30_3.

[0230] Hereinafter, the manufacturing process will be schematically described. Figure 17 Method of light emitting element 30_3.

[0231] Figures 19 to 23 It shows the manufacturing Figure 17 A cross-sectional view of the process of producing a light-emitting element.

[0232] First, refer to Figure 19 , forming a structure in which the first semiconductor material layer 3100 , the active layer 3600 , the second semiconductor material layer 3200 and the electrode material layer 3700 are sequentially stacked on the lower substrate 1300 .

[0233] Specifically, the lower substrate 1300 may include a plurality of layers. The lower substrate 1300 may include the above-mentioned base substrate and a buffer material layer provided on the base substrate. For example, the lower substrate 1300 may have a structure in which a sapphire substrate (Al2O3) and a transparent substrate such as glass and a buffer material layer provided on the transparent substrate are stacked.

[0234] The lower substrate 1300 may be provided to be inclined. Since the lower substrate 1300 is provided to be inclined, a plurality of material layers constituting a semiconductor structure 3000 to be described later may be stacked to be inclined with respect to one direction X.

[0235] Next, refer to Figure 20 , the semiconductor structure 3000 is vertically etched to form semiconductor crystals 3000 ′ spaced apart from each other.

[0236] The vertical direction of etching the semiconductor structure 3000 may be parallel to the extension direction of the semiconductor structure 3000. In addition, the vertical direction of etching the semiconductor structure 3000 may be inclined at a predetermined angle relative to the stacking direction of the plurality of material layers included in the semiconductor structure 3000. Figure 19As described, when a plurality of semiconductor layers are formed on the lower substrate 1300 inclined at a predetermined angle with respect to one direction X, the inclined surface of each semiconductor layer may be inclined with respect to the vertical direction in which the semiconductor structure 3000 is etched.

[0237] The semiconductor structure 3000 may be etched by conventional methods. For example, the semiconductor structure 3000 may be etched by forming an etching mask layer on the semiconductor structure 3000 and etching the semiconductor structure 3000 along the etching mask layer in a direction inclined to one surface of the lower substrate 1300 .

[0238] Next, an element rod Rod including an insulating film 3800 ′ partially surrounding the outer surface of the semiconductor crystal 3000 ′ is formed.

[0239] Reference Figure 21 and Figure 22 The element rod Rod can be formed by completely forming an insulating material layer 3800 on the semiconductor crystal 3000', partially removing the insulating material layer 3800 to expose the upper surface of the electrode material layer 3700' of the semiconductor crystal 3000', and peeling the semiconductor crystal 3000' with the exposed upper surface of the electrode material layer 3700' from the lower substrate 1300.

[0240] Next, refer to Figure 23 , can be manufactured by cutting the first semiconductor material layer 3100' of the element rod Rod Figure 18 The light-emitting element 30_3 is formed by cutting the first semiconductor material layer 3100' at one end thereof to be inclined toward the other end thereof, where the electrode material layer 3700' is disposed. The cutting method can be performed using a physical cutting method or a chemical cutting method as described above. For example, the light-emitting element 30_3 can be manufactured by irradiating a laser beam L onto one end of the first semiconductor material layer 3100' of the element rod Rod.

[0241] In summarizing the detailed description, it will be appreciated by those skilled in the art that many changes and modifications may be made to the preferred embodiments without departing substantially from the principles of the invention. Therefore, the preferred embodiments of the disclosed invention are used in a general and descriptive sense only and not for purposes of limitation.

Claims

1. A display device, comprising: substrate; a first electrode, disposed on the substrate; a second electrode disposed on the substrate and spaced apart from the first electrode; a first insulating layer disposed between the first electrode and the second electrode and covering at least a portion of the first electrode and the second electrode; a light emitting element, disposed on the first insulating layer between the first electrode and the second electrode, and extending in a first direction parallel to the upper surface of the substrate; as well as a second insulating layer, disposed on the light emitting element; The cross-section of the light-emitting element cut along the first direction includes: a first side extending in the first direction; a second side extending in the first direction, opposite to the first side, and farther away from the first insulating layer than the first side; a first side connecting one end of the first side and one end of the second side; and a second side connecting the other end of the first side and the other end of the second side. a first interior angle formed by the first edge and the first side edge is an acute angle, A second interior angle formed by the first side and the second side is an acute angle, and The second insulating layer exposes at least the first side and the second side of the light emitting element.

2. The display device according to claim 1, wherein The first interior angle is 75° or less, and The second interior angle is 75° or less.

3. The display device according to claim 2, wherein: The size of the first interior angle and the size of the second interior angle are equal to each other.

4. The display device according to claim 1, wherein The light emitting element comprises: a semiconductor core extending in the first direction, and An insulating layer surrounds the side surface of the semiconductor core.

5. The display device according to claim 4, wherein The semiconductor core comprises: a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and The active layer is arranged between the first semiconductor layer and the second semiconductor layer. The display device according to claim 5 , wherein: The first semiconductor layer, the active layer and the second semiconductor layer are sequentially arranged in the first direction, and Each interface between the first semiconductor layer, the active layer, and the second semiconductor layer is perpendicular to the first direction.

7. The display device according to claim 5, wherein: The first semiconductor layer, the active layer and the second semiconductor layer are sequentially arranged in the first direction, and Each interface between the first semiconductor layer, the active layer, and the second semiconductor layer is inclined with respect to the first direction.

8. The display device according to claim 1, wherein The first side of the light emitting element is at least partially in contact with an upper surface of the first insulating layer.

9. The display device according to claim 8, wherein The upper surface of the first insulating layer in contact with the light emitting element and the first side have an acute angle of inclination, and The upper surface of the first insulating layer contacting the light emitting element and the second side have an acute inclination.

10. The display device according to claim 1, wherein The second insulating layer does not overlap the first side and the second side.

11. The display device according to claim 1 , further comprising a first contact electrode and a second contact electrode provided on the first insulating layer and spaced apart from each other, in, The first contact electrode contacts the first electrode and the first side, and The second contact electrode contacts the second electrode and the second side.

12. A display device, comprising: substrate; a first electrode, disposed on the substrate; a second electrode disposed on the substrate and spaced apart from the first electrode; a first insulating layer disposed between the first electrode and the second electrode and covering at least a portion of the first electrode and the second electrode; a light emitting element, disposed on the first insulating layer between the first electrode and the second electrode, and extending in a first direction parallel to the upper surface of the substrate; as well as a second insulating layer, disposed on the light emitting element; The light emitting element includes: a first end electrically connected to the first electrode; and a second end electrically connected to the second electrode. The first end and the second end are inclined relative to the first direction, The inclined surface of the first end is inclined in a positive direction relative to the upper surface of the base, The inclined surface of the second end is inclined in a negative direction relative to the upper surface of the base, The inclined surface of the first end and the inclined surface of the second end are both inclined in an inward direction of the light emitting element, and The second insulating layer does not overlap the first end and the second end.

13. The display device according to claim 12, wherein: The inclined surface of the first end and the inclined surface of the second end are in a symmetrical relationship with respect to a cut surface passing through a central portion of the light emitting element in a direction perpendicular to the first direction.

14. The display device according to claim 12, further comprising a first contact electrode and a second contact electrode provided on the first insulating layer and spaced apart from each other, in, The first contact electrode contacts the first electrode and the first end, and The second contact electrode contacts the second electrode and the second end.

15. The display device according to claim 12, wherein: With respect to a second direction perpendicular to the first direction in a central portion of the light emitting element, the inclined extending surface of the first end and the inclined extending surface of the second end are each inclined toward one side in the second direction.

16. The display device according to claim 15, wherein The second direction is the same as a thickness direction of the display device.

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