Detection substrate, manufacturing method thereof, and detector

Abstract

The present invention provides a detection substrate, a manufacturing method thereof, and a detector. The detection substrate includes: a substrate; a gate electrode disposed on one side of the substrate; an active layer disposed on the side of the gate electrode away from the substrate, the active layer including a doped portion, the doped portion including a first doped region and a second doped region disposed at intervals, the doped portion having a first doping concentration; a doped layer disposed on at least a part of the surface of the second doped region away from the substrate, and the doped layer does not overlap with the first doped region, the doped layer having a second doping concentration, the second doping concentration being greater than the first doping concentration; a source-drain electrode layer including a source electrode and a drain electrode, the drain electrode being in contact connection with the first doped region, and the source electrode being in contact connection with the doped layer. Thus, when the thin-film transistor is in an off state, leakage current is not easily generated, and the setting of the doped layer further improves the ohmic contact between the source electrode and the active layer, and improves the on-off ratio of the thin-film transistor.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic detection, and specifically, to a detection substrate, a manufacturing method thereof, and a detector. Background Art

[0002] X-ray detection technology has broad application prospects and can be applied to many fields such as circuit board inspection, non-destructive testing, container scanning, medical treatment, security, etc. An X-ray detector usually includes a thin-film transistor and a photodiode. Under X-ray irradiation, a scintillator converts X-rays into visible light, the photodiode converts the visible light into an electrical signal, the thin-film transistor collects the electrical signal and outputs it, and the electrical signal forms an X-ray digital image through subsequent analog-to-digital conversion and image processing.

[0003] However, in the current detector, the thin-film transistor is prone to leakage current in the off state. Therefore, the current detection substrate, its manufacturing method, and the detector still need to be improved. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems in the related art to some extent.

[0005] In one aspect of the present invention, a detection substrate is provided. According to an embodiment of the present invention, the detection substrate includes: a substrate; a gate disposed on one side of the substrate; an active layer disposed on a side of the gate away from the substrate, the active layer including a doped portion, the doped portion including a first doping region and a second doping region disposed at intervals, the doped portion having a first doping concentration; a doping layer disposed on at least a part of a surface of the second doping region away from the substrate, and the doping layer does not overlap with the first doping region, the doping layer having a second doping concentration, the second doping concentration being greater than the first doping concentration; a source-drain electrode layer including a source electrode and a drain electrode, the drain electrode being in contact connection with the first doping region, and the source electrode being in contact connection with the doping layer. Thus, the above detection substrate is not prone to leakage current when the thin-film transistor is in the off state, and the setting of the doping layer further improves the ohmic contact between the source electrode and the active layer, and improves the on-off ratio of the thin-film transistor.

[0006] According to an embodiment of the present invention, the detection substrate further includes: a first insulating layer disposed on a side of the source-drain electrode layer away from the substrate and covering an exposed area of the source-drain electrode layer; a first electrode layer disposed on a side of the first insulating layer away from the substrate, the first electrode layer being electrically connected to the source electrode through a via; a photodiode disposed on a surface of the first electrode layer away from the substrate; and a second electrode layer disposed on a surface of the photodiode away from the substrate. Thereby, it is beneficial to further improve the overall performance of the detection substrate.

[0007] According to an embodiment of the present invention, the intrinsic semiconductor material of the doping layer is the same as the intrinsic semiconductor material of the active layer. Thereby, the doping layer and the active layer can have a higher degree of matching.

[0008] According to an embodiment of the present invention, the doping element of the doping layer is the same as the doping element of the doping portion. Thereby, it is more beneficial to adjust and control the doping concentrations of the doping layer and the doping portion.

[0009] According to an embodiment of the present invention, the thickness of the doping layer is 50 nm to 100 nm. Thereby, the doping layer has a suitable thickness, which will not cause obvious step differences, and the subsequent formation of each layer structure can still maintain good flatness. Moreover, setting the thickness of the doping layer within the above range is more beneficial to the uniform distribution of the doping elements in the doping layer, thereby better avoiding the generation of leakage current.

[0010] In another aspect of the present invention, the present invention provides a method for manufacturing the detection substrate described above. According to an embodiment of the present invention, the method for manufacturing the detection substrate described above includes: providing a substrate; forming a gate on one side of the substrate; forming an active layer on a side of the gate away from the substrate, the active layer including a doping portion, the doping portion including a first doping region and a second doping region arranged at intervals, the doping portion having a first doping concentration; forming a doping layer on at least a part of a surface of the second doping region away from the substrate, the doping layer not overlapping with the first doping region, the doping layer having a second doping concentration, the second doping concentration being greater than the first doping concentration; and forming a source-drain electrode layer, the source-drain electrode layer including a source electrode and a drain electrode, the drain electrode being in contact connection with the first doping region, and the source electrode being in contact connection with the doping layer. Thereby, the detection substrate manufactured by using this method has all the characteristics and advantages of the detection substrate described above, which will not be elaborated here; using this method to manufacture the detection substrate, the process is simple and easy to operate, which is beneficial to improving the yield and stability of the product.

[0011] According to an embodiment of the present invention, forming the doped layer includes: using a mask to expose at least a part of the surface of the second doped region away from the substrate; forming a doped layer on at least a part of the surface of the second doped region away from the substrate. Thus, the doping concentration of the doped layer can be controlled, the operation is simple and easy to implement, and the repeatability is better.

[0012] According to an embodiment of the present invention, the method for manufacturing the aforementioned detection substrate further includes: forming a first insulating layer on a side of the source-drain electrode layer away from the substrate, the first insulating layer covering at least a part of the exposed region of the source-drain electrode layer; forming a first electrode layer on a side of the first insulating layer away from the substrate, the first electrode layer being electrically connected to the source electrode through a via; forming a photodiode on a surface of the first electrode layer away from the substrate; forming a second electrode layer on a surface of the photodiode away from the substrate.

[0013] In another aspect of the present invention, the present invention provides a detector. According to an embodiment of the present invention, the detector includes the aforementioned detection substrate. Thus, the detector has all the features and advantages of the aforementioned detection substrate, which will not be elaborated here. Generally speaking, the detector is not prone to leakage current in the state where the thin-film transistor is turned off, and the detector has a high on-off ratio.

[0014] According to an embodiment of the present invention, the detector further includes a scintillator. Thus, it is beneficial to further improve the overall performance of the detector. Description of the Drawings

[0015] Figure 1 Shows a schematic structural diagram of a detection substrate according to an embodiment of the present invention;

[0016] Figure 2 Shows a schematic structural diagram of a detection substrate according to another embodiment of the present invention;

[0017] Figure 3 Shows a schematic diagram of the back-channel energy band of a thin-film transistor without a doped layer;

[0018] Figure 4 Shows a schematic diagram of the back-channel energy band of a thin-film transistor after forming a doped layer;

[0019] Figure 5 Shows a flowchart of a method for manufacturing a detection substrate according to an embodiment of the present invention;

[0020] Figure 6 Shows a schematic structural diagram of a detector according to an embodiment of the present invention.

[0021] Description of the Reference Numerals:

[0022] 100: Substrate; 200: Gate; 300: Active layer; 310: Doped portion; 311: First doped region; 312: Second doped region; 400: Doped layer; 510: Drain; 520: Source; 600: First insulating layer; 700: First electrode layer; 800: Photodiode; 900: Second electrode layer; 10: Gate insulating layer; 20: Via; 30: Second insulating layer; 40: Third insulating layer; 50: Masking metal layer; 1: Carrier; 1000: Detection substrate; 2000: Scintillator. Detailed implementation manners

[0023] Embodiments of the present invention will be described in detail below. The embodiments described below are exemplary and are only used to explain the present invention and should not be construed as a limitation to the present invention. For technologies or conditions not specified in the embodiments, they shall be carried out according to the technologies or conditions described in the literature in this field or according to the product specifications.

[0024] In one aspect of the present invention, the present invention provides a detection substrate. According to an embodiment of the present invention, with reference to Figure 1 and Figure 2 , the detection substrate 1000 may include a substrate 100, a gate 200, an active layer 300, a doped layer 400, and a source-drain electrode layer. Among them, the gate 200 is disposed on one side of the substrate 100; the active layer 300 is disposed on the side of the gate 200 away from the substrate 100. The active layer 300 includes a doped portion 310, and the doped portion 310 includes a first doped region 311 and a second doped region 312 that are spaced apart. The doped portion 310 has a first doping concentration; the doped layer 400 is disposed on at least a part of the surface of the second doped region 312 away from the substrate 100, and the doped layer 400 does not overlap with the first doped region 311. The doped layer 400 has a second doping concentration, and the second doping concentration is greater than the first doping concentration; the source-drain electrode layer includes a source 520 and a drain 510. The drain 510 is in contact connection with the first doped region 311, and the source 520 is in contact connection with the doped layer 400. Thus, the setting of the first doped region can improve the ohmic contact between the active layer and the drain, and the setting of the second doped region can improve the ohmic contact between the active layer and the source. Further disposing a doped layer on at least a part of the surface of the second doped region away from the substrate and making the doping concentration of the second doped layer greater than that of the doped portion can further improve the ohmic contact between the active layer and the source; moreover, the second doping concentration being greater than the first doping concentration can effectively reduce the leakage current in the off state of the thin-film transistor or even avoid the generation of leakage current in the off state of the thin-film transistor, thereby improving the on-off ratio of the thin-film transistor. It should be noted that the on-off ratio of the thin-film transistor refers to the ratio of the current I on of the thin-film transistor in the on state to the current I off of the thin-film transistor in the off state.

[0025] It should be noted that the detection substrate 1000 may further include a gate insulating layer 10. Refer to Figure 1 and Figure 2 . The gate insulating layer 10 covers at least a part of the surface of the gate 200 away from the substrate 100. It should also be noted that the active layer 300 further includes a channel region (not shown in the figure), and the orthographic projection of the channel region on the substrate is located between the orthographic projection of the first doping region 311 on the substrate and the orthographic projection of the second doping region 312 on the substrate.

[0026] The principle of the detection substrate of the present invention for reducing or even avoiding the leakage current of the thin-film transistor in the off state will be described in detail below: Refer to Figure 3 , Figure 3 . The energy band diagram of the back channel in the case where the thin-film transistor does not form a doping layer is shown in Figure 3 . Among them, Ec represents the conduction band, Ef represents the Fermi level, Ei represents the Fermi level of the intrinsic semiconductor, and Ev represents the valence band. It can be seen from Figure 4 that, compared with the energy band of the active layer intrinsic semiconductor, the energy bands of the first doping region and the second doping region obtained after doping the intrinsic semiconductor have certain changes. There is a certain conduction band barrier between the second doping region and the active layer intrinsic semiconductor. The inventor found that in this case, due to the small conduction band barrier between the second doping region and the active layer intrinsic semiconductor, the carrier 1 (the carrier in the present invention is an electron) may still overcome the barrier and transport to the first doping region and the drain when the thin-film transistor is off, forming a leakage current. Refer to Figure 4 . The energy band diagram of the back channel in the case where the thin-film transistor forms a doping layer is shown in

[0027] . In the embodiment of the present invention, refer to Figure 2, the detection substrate 1000 may further include: a first insulating layer 600 disposed on a side of the source-drain electrode layer away from the substrate 100 and covering at least a partially exposed area of the source-drain electrode layer; a first electrode layer 700 disposed on a side of the first insulating layer 600 away from the substrate 100, and the first electrode layer 700 is electrically connected to the source electrode 520 through a via hole 20; a photodiode 800 disposed on a surface of the first electrode layer 700 away from the substrate 100; and a second electrode layer 900 disposed on a surface of the photodiode 800 away from the substrate 100. Thereby, it is beneficial to improve the overall performance of the detection substrate. A bias voltage is applied to the photodiode through the second electrode layer, so that the photodiode converts photons of visible light into carriers (electrons). The electrons are transported to the source electrode by the first electrode layer. The thin-film transistor collects the electrical signal and outputs the electrical signal, and then combines subsequent analog-to-digital conversion and image processing to form a digital image.

[0028] According to some embodiments of the present invention, in the detection substrate 1000, the intrinsic semiconductor material of the doping layer 400 is the same as the intrinsic semiconductor material of the active layer 300. Using the same intrinsic semiconductor material for the doping layer and the active layer can make the doping layer and the active layer have a higher degree of matching, facilitating the regulation of the conduction band barrier of the intrinsic semiconductor of the doping layer and the active layer through doping, thereby better reducing or even avoiding the leakage current in the off state of the thin-film transistor.

[0029] According to some embodiments of the present invention, the doping element of the doping layer 400 is the same as the doping element of the doping portion 310. Thus, when forming the doping portion and the doping layer, the doping concentration of the doping portion and the doping layer can be regulated by the doping time or doping rate of the doping element, etc., so that the doping concentration of the doping layer is greater than that of the doping portion, thereby effectively reducing or even avoiding the leakage current in the off state of the thin-film transistor.

[0030] In the present invention, the specific components of the doping element of the doping layer 400 and the doping element of the doping portion 310 are not particularly limited, and those skilled in the art can select and set according to actual needs. According to some embodiments of the present invention, the doping element of the doping layer and the doping element of the doping portion may both be phosphorus elements to perform N-type doping on the intrinsic semiconductor to form an N-type semiconductor.

[0031] According to an embodiment of the present invention, refer to Figure 1, the thickness H of the doping layer 400 can be 50 nm to 100 nm. According to some embodiments of the present invention, the thickness H of the doping layer 400 can be 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, etc. When the thickness of the doping layer is set within the above range, no obvious step difference will be formed, which will not cause obvious adverse effects on the flatness of the subsequent formed layers. Moreover, it is beneficial to the uniform distribution of the doping elements in the doping layer, and it is not easy to affect the second doping region during the formation of the doping layer.

[0032] According to some embodiments of the present invention, the material for forming the source-drain electrode layer and the material for forming the first electrode layer 700 can both be aluminum, the material for forming the gate 200 can be molybdenum, the material for forming the first insulating layer 600 can be silicon nitride, silicon oxide, silicon oxynitride, etc., and the material for forming the second electrode layer 900 can be indium tin oxide.

[0033] According to some embodiments of the present invention, referring to Figure 2 , the detection substrate 1000 can further include a second insulating layer 30, a third insulating layer 40, and a shielding metal layer 50. Among them, referring to Figure 2 , the second insulating layer 30 covers a part of the surface of the first insulating layer 600 away from the substrate 100, a part of the surface of the first electrode layer 700 away from the substrate 100, a part of the surface of the photodiode 800 away from the substrate 100, and a part of the surface of the second electrode layer 900 away from the substrate 100; the third insulating layer 40 covers a part of the surface of the second insulating layer 30 away from the substrate 100, the shielding metal layer 50 covers a part of the surface of the third insulating layer 40 away from the substrate 100, and the shielding metal layer 50 is electrically connected to the second electrode layer 900. Thus, the formed detection substrate has a good detection function.

[0034] According to some embodiments of the present invention, the second insulating layer 30 can be formed of materials such as silicon nitride, silicon oxide, silicon oxynitride, etc. Thus, the second insulating layer has good insulating properties.

[0035] According to some embodiments of the present invention, the third insulating layer 40 can be formed of a resin material. Thus, the third insulating layer can play a good insulating role, and moreover, the third insulating layer can also play a good planarization role, which is beneficial to further forming other layer structures on the side of the third insulating layer away from the substrate.

[0036] According to some embodiments of the present invention, the shielding metal layer 50 can be formed of metal materials such as copper, aluminum, titanium, etc. Thus, the shielding metal layer 50 has good electrical conductivity and light shielding properties, which is beneficial to further improving the overall performance of the detection substrate.

[0037] In another aspect of the present invention, the present invention provides a method for fabricating the aforementioned detection substrate. According to an embodiment of the present invention, with reference to Figure 5 , the method for fabricating the aforementioned detection substrate may include the following steps:

[0038] S100: Provide a substrate.

[0039] In this step, when providing a substrate, the specific material of the substrate in the present invention is not particularly limited, and those skilled in the art can select and set it according to actual needs. For example, a substrate made of glass, polyimide, or the like can be selected.

[0040] S200: Form a gate on one side of the substrate.

[0041] According to an embodiment of the present invention, in this step, a gate 200 is formed on one side of the substrate 100. With reference to Figure 5 Figure (a) therein, the gate 200 covers a part of the surface of the substrate 100.

[0042] S300: Form an active layer on the side of the gate away from the substrate.

[0043] According to an embodiment of the present invention, an active layer 300 is formed on the side of the gate 200 away from the substrate 100. With reference to Figure 5 Figure (b) therein, the active layer 300 includes a doped portion 310, and the doped portion 310 includes a first doping region 311 and a second doping region 312 arranged at intervals. Among them, the doped portion 310 has a first doping concentration.

[0044] According to some embodiments of the present invention, when forming the active layer 300, an original active layer of an intrinsic semiconductor (such as α-Si) can be formed first, and then, a part of the region of the original active layer is doped to form the first doping region 311 and the second doping region 312 arranged at intervals. According to some specific embodiments of the present invention, a whole-layer original doped portion is formed by doping a part of the region of the original active layer, and then, the original doped portion is etched to form the first doping region 311 and the second doping region 312 arranged at intervals.

[0045] It should be noted that before forming the active layer 300, there is also a step of forming a gate insulating layer 10, and the gate insulating layer 10 covers the surface of the gate 200 away from the substrate 100. Figure 5 In order to more clearly show the structures such as the gate, the active layer, the doping layer, and the source-drain electrode layer, the gate insulating layer 10 is not shown therein.

[0046] S400: Form a doping layer on at least a part of the surface of the second doping region away from the substrate.

[0047] In this step, a doped layer 400 is formed on at least a part of the surface of the second doped region 312 away from the substrate 100. Refer to Figure 1 , Figure 2 and Figure 5 Figure (c) therein. The doped layer 400 does not overlap with the first doped region 311. The doped layer 400 has a second doping concentration, and the second doping concentration is greater than the first doping concentration. Thus, the conduction band barrier between the doped layer and the intrinsic semiconductor of the active layer in the off state of the thin film transistor can be increased, thereby effectively reducing or even avoiding the leakage current in the off state of the thin film transistor. Moreover, the ohmic contact between the active layer and the source electrode can be improved, and the on-off ratio of the thin film transistor can be increased.

[0048] According to some embodiments of the present invention, forming the doped layer 400 includes: using a mask to expose at least a part of the surface of the second doped region 312 away from the substrate 100; forming the doped layer 400 on at least a part of the surface of the second doped region 312 away from the substrate 100. Thus, by using a mask, the formation of the doped layer and the doping concentration of the doped layer can be better controlled, and the adverse effect on the second doped region during the formation of the doped layer can be avoided. The scheme of forming the doped layer by using a mask has the advantages of simple process and good repeatability. Moreover, the doping concentration of the doped layer is controllable, and the overall stability of the formed detection substrate is better.

[0049] In order to reduce or even avoid the leakage current of the thin film transistor in the off state, the inventor attempts to perform gradient doping on the intrinsic semiconductor of the active layer, doping some regions of the intrinsic semiconductor of the active layer with a lower concentration, and then doping some regions in contact with the source electrode with a higher concentration, so as to improve the ohmic contact between this part of the region and the source electrode. However, through a large number of experiments, it is found that the gradient doping process is relatively complex and has poor repeatability, and moreover, the gradient concentration is difficult to control well, and the stability of the formed detection substrate is poor. After that, through a large number of experimental improvements, the inventor finds that after forming the low-concentration doped region of the active layer, a high-concentration doped layer can be additionally formed only on the surface of the low-concentration doped region corresponding to the source electrode away from the substrate by using a mask, which can better regulate the doping concentration and will not cause adverse effects on the low-concentration doped region. The process is simple and has good repeatability. The formed high-concentration doped region is in contact with the source electrode. In the off state of the thin film transistor, there is a large conduction band barrier between the high-concentration doped region and the intrinsic semiconductor of the active layer, which can better hinder the transport of carriers to the drain, reducing or even avoiding the leakage current of the thin film transistor in the off state. It should be noted that the high concentration and the low concentration in the present invention are relative concepts, indicating that the doping concentration of the high-concentration doping is greater than the doping concentration of the low-concentration doping.

[0050] According to some specific embodiments of the present invention, forming the doped layer 400 may include: using a mask to expose at least a partial surface of the second doped region 312 away from the substrate 100, forming an intrinsic semiconductor layer on at least a partial surface of the second doped region 312 away from the substrate 100, and then doping the intrinsic semiconductor layer to form the doped layer 400.

[0051] According to other specific embodiments of the present invention, forming the doped layer 400 may include: using a mask to expose at least a partial surface of the second doped region 312 away from the substrate 100, and simultaneously depositing (for example, chemical vapor deposition method may be used) an intrinsic semiconductor material and a doping element on at least a partial surface of the second doped region 312 away from the substrate 100 to form the doped layer 400.

[0052] S500: Form the source-drain electrode layer.

[0053] After forming the doped layer 400, the source-drain electrode layer is formed, wherein, referring to Figure 1 , Figure 2 and Figure 5 in the figure (d), the source-drain electrode layer includes a source electrode 520 and a drain electrode 510, the drain electrode 510 is in contact connection with the first doped region 311, and the source electrode 520 is in contact connection with the doped layer 400.

[0054] Using the above method to fabricate the detection substrate, a doped layer with a higher doping concentration is formed on at least a partial surface of the active layer away from the substrate by using a mask, which improves the ohmic contact between the active layer and the source electrode, increases the conduction band barrier between the doped layer and the intrinsic semiconductor of the active layer in the off state of the thin film transistor, effectively hinders the transport of carriers to the drain electrode, and thus can effectively reduce the leakage current or even avoid the generation of leakage current in the off state of the thin film transistor; the above method has a simple process, is easy to repeat, and can better adjust and control the doping concentration.

[0055] According to some embodiments of the present invention, the method for fabricating the detection substrate described above may further include the following steps: forming a first insulating layer 600 on a side of the source-drain electrode layer away from the substrate 100, the first insulating layer 600 covering at least a partial region exposed by the source-drain electrode layer; forming a first electrode layer 700 on a side of the first insulating layer 600 away from the substrate 100, the first electrode layer 700 being electrically connected to the source electrode 520 through a via 20; forming a photodiode 800 on a surface of the first electrode layer 700 away from the substrate 100; and forming a second electrode layer 900 on a surface of the photodiode 800 away from the substrate 100. Thus, the formed detection substrate has a better detection function and can better perform photoelectric conversion and collection of electrical signals, etc.

[0056] According to some embodiments of the present invention, after forming the second electrode layer 900, the method for fabricating the aforementioned detection substrate may further include a step of forming a second insulating layer 30, which covers a partial surface of the first insulating layer 600 away from the substrate 100, a partial surface of the first electrode layer 700 away from the substrate 100, a partial surface of the photodiode 800 away from the substrate 100, and a partial surface of the second electrode layer 900 away from the substrate 100.

[0057] According to some embodiments of the present invention, after forming the second insulating layer 30, the method for fabricating the aforementioned detection substrate may further include steps of forming a third insulating layer 40 and a shielding metal layer 50. The third insulating layer 40 covers a partial surface of the second insulating layer 30 away from the substrate 100, the shielding metal layer 50 covers a partial surface of the third insulating layer 40 away from the substrate 100, and the shielding metal layer 50 is electrically connected to the second electrode layer 900.

[0058] In another aspect of the present invention, the present invention provides a detector. According to an embodiment of the present invention, the detector includes the aforementioned detection substrate 1000. Thus, the detector has all the features and advantages of the aforementioned detection substrate, which will not be elaborated herein. Generally speaking, the detector has a small leakage current or even can avoid leakage current in the state where the thin film transistor is turned off, and has good stability.

[0059] According to some embodiments of the present invention, with reference to Figure 6 , the detector further includes a scintillator 2000, wherein the scintillator 2000 is disposed on a side of the shielding metal layer of the detection substrate 1000 away from the substrate. Thus, it is beneficial to further improve the overall performance of the detector. When X-rays irradiate the scintillator, the scintillator can convert the X-rays into visible light, and then through photoelectric conversion by the photodiode and electrical signal collection by the thin film transistor, etc., the detection function of the detector is realized.

[0060] The terms "first", "second", and "third" in the text are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first", "second", and "third" may explicitly or implicitly include one or more of such features. In the description of the present invention, the meaning of "a plurality" is two or more, unless otherwise specifically defined.

[0061] In the description of this specification, the descriptions referring to terms such as "one embodiment", "another embodiment", "some embodiments", "some specific embodiments" or "some other specific embodiments" mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0062] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A detection substrate, characterized in that, Comprising: A substrate; A gate disposed on one side of the substrate; An active layer disposed on the side of the gate away from the substrate, the active layer including a doped portion, the doped portion including a first doped region and a second doped region disposed at intervals, the doped portion having a first doping concentration; A doped layer disposed on at least a part of the surface of the second doped region away from the substrate, and the doped layer does not overlap with the first doped region, the doped layer having a second doping concentration, the second doping concentration being greater than the first doping concentration; A source-drain electrode layer including a source electrode and a drain electrode, the drain electrode being in contact connection with the first doped region, and the source electrode being in contact connection with the doped layer.

2. The detection substrate according to claim 1, wherein Further comprising: A first insulating layer disposed on the side of the source-drain electrode layer away from the substrate and covering at least a part of the exposed region of the source-drain electrode layer; A first electrode layer disposed on the side of the first insulating layer away from the substrate, the first electrode layer being electrically connected to the source electrode through a via; A photodiode disposed on the surface of the first electrode layer away from the substrate; A second electrode layer disposed on the surface of the photodiode away from the substrate.

3. The detection substrate according to claim 1 or 2, characterized in that, The intrinsic semiconductor material of the doped layer is the same as that of the active layer.

4. The detection substrate according to claim 1 or 2, characterized in that, The doping element of the doped layer is the same as that of the doped portion.

5. The detection substrate according to claim 1 or 2, characterized in that The thickness of the doped layer is 50 nm to 100 nm.

6. A method for fabricating the detection substrate according to any one of claims 1 to 5, characterized in that, Including: Providing a substrate; Forming a gate on one side of the substrate; Forming an active layer on the side of the gate away from the substrate, the active layer including a doped portion, the doped portion including a first doped region and a second doped region disposed at intervals, the doped portion having a first doping concentration; Forming a doped layer on at least a part of the surface of the second doped region away from the substrate, the doped layer not overlapping with the first doped region, the doped layer having a second doping concentration, the second doping concentration being greater than the first doping concentration; Forming a source-drain electrode layer including a source electrode and a drain electrode, the drain electrode being in contact connection with the first doped region, and the source electrode being in contact connection with the doped layer.

7. The method according to claim 6, wherein Forming the doped layer includes: Using a mask to expose at least a part of the surface of the second doped region away from the substrate; Forming a doped layer on at least a part of the surface of the second doped region away from the substrate.

8. The method according to claim 6 or 7, characterized in that, Further comprising: Forming a first insulating layer on the side of the source-drain electrode layer away from the substrate, the first insulating layer covering at least a part of the exposed region of the source-drain electrode layer; Forming a first electrode layer on the side of the first insulating layer away from the substrate, the first electrode layer being electrically connected to the source electrode through a via; Forming a photodiode on the surface of the first electrode layer away from the substrate; Forming a second electrode layer on the surface of the photodiode away from the substrate.

9. A detector, characterized in that, Including the detection substrate according to any one of claims 1 to 5.

10. The detector according to claim 9, characterized in that, Further including a scintillator.

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