Semiconductor device, resistive switch and method of making the same

Abstract

The present disclosure provides a semiconductor device, a resistance switch and a manufacturing method thereof, and belongs to the technical field of electrical elements. The resistance switch comprises a shell, which is a closed hollow structure; a gas supply device, which is arranged outside the shell and communicates with the shell, is used to provide gas into the shell, and the gas comprises oxidizing gas and reducing gas; a resistance change element, which is arranged in the shell, and the material of the resistance change element is transformed between metal and multiple metal oxides based on the gas provided by the gas supply device. The resistance switch of the present disclosure can correspond to multiple resistance value states. When it is connected to a circuit, different resistance value states can correspond to different power on states or off states of the circuit, so as to meet the requirement of different power of the circuit under different conditions.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of electrical elements, and in particular to a semiconductor device, a resistance switch and a manufacturing method thereof. BACKGROUND

[0002] The resistance switch is one of the main elements for realizing the switching state of the circuit. The resistance switch changes the resistance value of the resistance variable material therein, thereby changing the on-off state of the circuit. In the prior art, the resistance switch usually only contains two states, which correspond to the opening and closing of the circuit respectively. However, with the development of electronic technology, higher requirements are put forward for the resistance switch.

[0003] The above information disclosed in the background section is only intended to strengthen the understanding of the background of the present disclosure, and therefore it can include information that does not constitute the prior art known to those of ordinary skill in the art. SUMMARY

[0004] The purpose of the present disclosure is to provide a semiconductor device, a resistance switch and a manufacturing method thereof, which can correspond to multiple resistance value states, and when connected to a circuit, different resistance value states can correspond to different power on states or off states of the circuit respectively, thereby meeting the requirement of different power of the circuit under different conditions.

[0005] To achieve the above-mentioned purpose of the application, the present disclosure adopts the following technical solutions:

[0006] According to a first aspect of the present disclosure, a resistance switch is provided, comprising:

[0007] a housing, which is a closed hollow structure;

[0008] a gas supply device, which is arranged outside the housing and communicates with the housing, for providing gas into the housing, the gas including oxidizing gas and reducing gas;

[0009] a resistance variable element, which is arranged in the housing, and the material of the resistance variable element is transformed between metal and multiple metal oxides based on the gas provided by the gas supply device.

[0010] In an exemplary embodiment of the present disclosure, the material of the resistance variable element is transformed between iron, ferrous oxide, magnetite and ferric oxide based on the gas provided by the gas supply device.

[0011] In an exemplary embodiment of the present disclosure, the initial state of the material of the resistance variable element is iron;

[0012] When the gas supply device supplies a first volume of the oxidizing gas into the housing, the material of the resistance variable element is transformed from iron to ferrous oxide.

[0013] In an exemplary embodiment of the present disclosure, after the material of the resistance-changing member changes to ferrous oxide, when the gas supply device supplies a third volume of the oxidizing gas into the shell, the material of the resistance-changing member changes from ferrous oxide to ferric oxide.

[0014] In an exemplary embodiment of the present disclosure, after the material of the resistance-changing member changes to ferrous oxide, when the gas supply device supplies a third volume of the oxidizing gas into the shell, the material of the resistance-changing member changes from ferrous oxide to ferric oxide.

[0015] In an exemplary embodiment of the present disclosure, after the material of the resistance-changing member changes to ferric oxide, when the gas supply device supplies the reducing gas into the shell, the material of the resistance-changing member changes from ferric oxide to iron.

[0016] In an exemplary embodiment of the present disclosure, the oxidizing gas comprises one or a combination of oxygen and ozone, and the reducing gas comprises one or a combination of hydrogen and carbon monoxide.

[0017] In an exemplary embodiment of the present disclosure, the gas further comprises an inert gas.

[0018] In an exemplary embodiment of the present disclosure, the resistance-changing member comprises a plurality of layers of resistance-changing material arranged in a stack, and the plurality of layers of resistance-changing material are connected in parallel.

[0019] In an exemplary embodiment of the present disclosure, the layer of resistance-changing material is in a mesh structure.

[0020] In an exemplary embodiment of the present disclosure, the resistance switch further comprises:

[0021] a conductive member connected to the resistance-changing member, and the resistance-changing member is electrically connected to an external circuit through the conductive member.

[0022] In an exemplary embodiment of the present disclosure, the resistance switch further comprises:

[0023] a heating device arranged in the shell and configured to provide heat to the resistance-changing member.

[0024] According to a second aspect of the present disclosure, a method for manufacturing a resistance switch is provided, comprising:

[0025] providing a resistance-changing member and arranging the resistance-changing member in a sealed shell;

[0026] providing a gas into the shell, so that the material of the resistance-changing member changes between metal and a plurality of metal oxides based on the provided gas, and the gas comprises an oxidizing gas and a reducing gas.

[0027] In an exemplary embodiment of the present disclosure, the material of the resistance-changing member is based on the mutual transformation between iron, ferrous oxide, magnetite and ferric oxide of the provided gas.

[0028] In an exemplary embodiment of the present disclosure, the initial state of the material of the resistance-changing member is iron.

[0029] The step of providing the gas into the shell, and making the material of the resistance-changing member transform between the metal and the multiple metal oxides based on the provided gas includes,

[0030] The first volume of the oxidizing gas is introduced into the shell, and the material of the resistance-changing member is changed from iron to ferrous oxide.

[0031] The second volume of the oxidizing gas is introduced into the shell, and the material of the resistance-changing member is changed from ferrous oxide to magnetite.

[0032] The third volume of the oxidizing gas is introduced into the shell, and the material of the resistance-changing member is changed from magnetite to ferric oxide.

[0033] The reducing gas is introduced into the shell, and the material of the resistance-changing member is changed from ferric oxide to iron.

[0034] According to a third aspect of the present disclosure, a semiconductor device is provided, which includes the resistance switch of the first aspect.

[0035] The resistance switch provided by the present disclosure includes a shell, a gas supply device and a resistance-changing member. The resistance-changing member is arranged in the shell, and the gas supply device is used to provide gas to the shell. The gas supply device provides oxidizing gas and reducing gas to the shell, so that the material of the resistance-changing member transforms between the metal and the multiple metal oxides. The metal and the different metal oxides correspond to different resistances respectively, so that the resistance switch can correspond to multiple resistance states. When connected to a circuit, different resistance states can correspond to different power on states or off states of the circuit, so as to meet the requirement of different power of the circuit under different conditions. BRIEF DESCRIPTION OF DRAWINGS

[0036] The above and other features and advantages of the present disclosure will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.

[0037] Figure 1 is a schematic diagram of the structure of the resistance switch in an exemplary embodiment of the present disclosure;

[0038] Figure 2 is a schematic diagram of the electron arrangement outside the iron nucleus;

[0039] Figure 3 is a schematic diagram of the electron arrangement outside the ferrous oxide nucleus;

[0040] Figure 4 is a schematic diagram of the electron configuration of ferric iron;

[0041] Figure 5 is a flow chart of a method of manufacturing a resistive switch in an exemplary embodiment of the present disclosure.

[0042] The main elements in the figures are explained below:

[0043] 100 - housing; 200 - gas supply; 300 - resistive element; 400 - conductive element. DETAILED DESCRIPTION

[0044] Example embodiments now will be described more fully hereinafter with reference to the accompanying drawings. Example embodiments, however, can be implemented in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of example embodiments to those skilled in the art. The described features, structures, or characteristics can be combined in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the aspects described herein can be practiced without one or more of the specific details, or with other methods, components, materials, etc.

[0045] In the drawings, the thicknesses of regions and layers can be exaggerated for clarity. Like reference numerals in different drawings denote like elements, and so a detailed description thereof will be omitted.

[0046] The described features, structures, or characteristics can be combined in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the aspects described herein can be practiced without one or more of the specific details, or with other methods, components, materials, etc. In other instances, well-known structures, materials, or operations are not shown or described in detail in order to avoid obscuring aspects of the disclosure.

[0047] When an element or layer is referred to as being "on" another element or substrate, it can be directly on the other element or substrate or intervening elements can also be present. In contrast, when an element is referred to as being "directly on" another element or substrate, there are no intervening elements present. It will be understood that when an element is referred to as being "connected" to or "coupled" to another element, it can be directly connected or coupled or intervening elements can be present. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0048] The singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "includes," and "including" are intended to be open-ended terms that mean "including, but not limited to," and thus specify the presence of stated elements or integers, but do not preclude the presence or addition of one or more other elements or integers. The term "first," "second," and the like do not denote any order, quantity, or importance, but rather are used to distinguish one element from another.

[0049] In the related art, a resistance switch generally only includes two states, which correspond to the opening and closing of a circuit. The resistance change material in such a resistance switch generally only undergoes one redox reaction, and thus can only be switched between two states, such as a low resistance and a high resistance, and can only realize the opening and closing of a circuit. Such a resistance switch cannot meet the needs of current circuits.

[0050] As shown in Figure 1 The resistance switch provided in the present disclosure includes a housing 100, a gas supply device 200, and a resistance change member 300. The resistance change member 300 is arranged in the housing 100, and the gas supply device 200 is arranged outside the housing 100 and communicates with the housing 100 to supply gas to the housing 100. The gas includes oxidizing gas and reducing gas. The material of the resistance change member 300 is converted between a metal and a plurality of metal oxides based on the gas supplied by the gas supply device 200.

[0051] The resistance switch provided in the present disclosure includes a housing 100, a gas supply device 200, and a resistance change member 300. The resistance change member 300 is arranged in the housing 100, and the gas supply device 200 is arranged outside the housing 100 and communicates with the housing 100 to supply gas to the housing 100. The gas includes oxidizing gas and reducing gas. The material of the resistance change member 300 is converted between a metal and a plurality of metal oxides based on the gas supplied by the gas supply device 200.

[0052] The components of the resistance switch provided in the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings:

[0053] As shown in Figure 1 The resistance switch provided in the present disclosure can be connected to various circuits and can realize the switching of the circuits between various power states by changing the resistance value of the resistance switch. For example, the resistance switch provided in the present disclosure can be connected to a lamp control circuit to adjust and control the brightness of a lamp to meet the different needs of people for the brightness of the lamp at different times. In addition, the resistance switch provided in the present disclosure can also be used in integrated circuits to manufacture electronic devices such as displays and memories to meet the needs of different display states or storage states.

[0054] The resistance switch provided by the present disclosure comprises a shell 100, a gas supply device 200 and a resistance changing member 300. The shell 100 is a closed hollow structure, which forms a containing cavity providing a containing space for other components of the resistance switch. The shell 100 is a closed structure, which means that the interior of the shell 100 cannot communicate with the outside air, and the outside air cannot enter the interior of the shell 100, so as to ensure the controllability of the gas in the interior of the shell 100.

[0055] The shape and structure of the shell 100 can be set according to actual conditions. The shell 100 can be a regular geometric body such as a cuboid, a cube, a cylinder or a sphere, or an irregular special-shaped geometric body such as a cuboid with chamfered corners. The size of the shell 100 can also be set according to actual conditions. When the resistance switch is used in a general circuit such as a household appliance circuit, the size of the shell 100 can be relatively large. When the resistance switch is used in an integrated circuit, the size of the shell 100 should be as small as possible to meet the requirements of the integrated circuit.

[0056] In addition, the shell 100 should have insulation. Specifically, the shell 100 can be made of an insulating material, or can be made by coating an insulating layer on the shell 100. Moreover, the shell wall of the shell 100 can be a single-layer structure or a multi-layer structure, as long as it can provide a relatively stable containing space and meet the insulation requirements. The specific disclosure is not limited.

[0057] The gas supply device 200 is arranged outside the shell 100 and communicates with the shell 100, and is used to provide gas into the shell 100. The gas provided by the gas supply device 200 includes oxidizing gas and reducing gas. The oxidizing gas has oxidizing property and can cause certain substances to undergo oxidation reaction. For example, the oxidizing gas can oxidize metal to generate metal oxide. The reducing gas is a gas with reducing property and can cause certain substances to undergo reduction reaction. For example, the reducing gas can cause metal oxide to undergo reduction reaction to generate metal.

[0058] In an embodiment of the present disclosure, the number of gas supply devices 200 can be multiple, and each gas supply device 200 corresponds to provide different gas. For example, the number of gas supply devices 200 is two, which are respectively used to provide oxidizing gas and reducing gas, and each gas supply device 200 can be independently controlled.

[0059] In another embodiment of the present disclosure, the number of gas supply devices 200 can also be one, which includes a first sub-zone for containing oxidizing gas and a second sub-zone for containing reducing gas, and the first sub-zone and the second sub-zone are isolated from each other to ensure that the oxidizing gas and the reducing gas do not interfere with each other. In this embodiment, the oxidizing gas and the reducing gas can enter the shell 100 through different gas channels respectively. Each gas channel can be independently controlled. Further, a flow valve or a time controller can be provided on the gas channel to control the amount of gas entering the shell 100. The amount of gas can be achieved by controlling the gas flow rate, gas input time or gas molar amount, etc.

[0060] The oxidizing gas in the gas supply device 200 can be one or more. In some embodiments of the present disclosure, the oxidizing gas includes one or a combination of oxygen (O2) and ozone (O3), and the oxygen and the ozone are isolated from each other. For example, the first sub-zone for containing the oxidizing gas in the gas supply device 200 can be further divided into a plurality of sub-units, each of which is used to contain a different oxidizing gas, and each sub-unit can be independently controlled. For example, the first sub-zone can include an oxygen unit and an ozone unit for containing oxygen and ozone respectively.

[0061] Similarly, the reducing gas can also include one or more. In some embodiments of the present disclosure, the reducing gas includes one or a combination of hydrogen (H2) and carbon monoxide (CO). Hydrogen and carbon monoxide have reducing properties and can reduce metal oxides to generate metals. A flow valve or a time controller can also be provided on the gas channel for delivering the reducing gas to control the amount of gas entering the shell 100. The amount of gas can be achieved by controlling the gas flow rate, gas input time or gas molar amount, etc.

[0062] In some embodiments of the present disclosure, the gas provided by the gas supply device 200 can also include inert gas. Inert gas has good chemical stability and generally does not react with other substances. When the resistance variable element 300 is in an unused state, the gas supply device 200 can provide inert gas to the shell 100, so that the shell 100 is filled with inert gas to ensure the stability of the resistance variable element 300 in the unused state.

[0063] It should be noted that the gas supply device 200 of the present disclosure can also include some chemical reaction devices to generate different gases. Of course, the gas supply device 200 can also not be provided with chemical reaction devices, i.e., the gas in the gas supply device 200 is not indirectly provided by chemical reaction, but is directly supplied.

[0064] In addition, the gas supply device 200 can also be equipped with a touch switch or an automatic controller, allowing the user to manually control the gas supply via the touch switch, or an automatic controller to control the gas supply. The automatic controller can control the gas supply by controlling parameters such as time.

[0065] The resistive switching element 300 is disposed within the housing 100 and is made of resistive switching material. Resistive switching material refers to a material whose resistance value can vary within a certain range, such as the resistive switching material changing between various resistance states, such as low resistance state, medium-low resistance state and high resistance state, as the surrounding environment changes.

[0066] In this disclosure, the material of the resistive switch 300 changes between metals and various metal oxides based on the gas supplied by the gas supply device 200. Typically, metals have very low resistance; when the resistive switch 300 is made of metal, the resistive switch is in a low-resistance state, which corresponds to a high-power on-state in the connected circuit. Metal oxides have higher resistance, and different metal oxides correspond to different resistance values. When the resistive switch 300 is made of metal oxide, the resistive switch is in a higher resistance state or a high-resistance state. When the material of the resistive switch 300 changes between different metal oxides, the resistive switch can also correspond to different power on-states or off-states in the connected circuit.

[0067] The resistor switch provided in this disclosure can switch between multiple resistance states because the material of the resistive element 300 can be changed between metals and various metal oxides, thereby allowing the connected circuit to switch between different power on-states and off-states. Compared with related technologies, the resistor switch provided in this disclosure can switch between at least an off-state and two different power on-states.

[0068] In some embodiments of this disclosure, the material of the resistive element 300 is based on the interconversion of iron (Fe), ferrous oxide (FeO), iron(II) oxide (Fe3O4), and iron oxide (Fe2O3) based on the gas supplied by the gas supply device 200.

[0069] like Figure 2 As shown, iron is a relatively reactive metal, ranking ahead of hydrogen in the activity series of metals. Iron has 26 electrons outside its nucleus, and according to the electron configuration rules, the electron configuration of iron is 1s². 2 2s 2 2p 6 3s 2 3p 6 3D 6 4s 2Iron's outermost electrons easily break free to form a large number of free electrons, resulting in excellent electrical conductivity. Therefore, iron has a very low resistance, allowing a resistor switch to operate in a low-resistance state, which in turn corresponds to a high-power conduction state in the connected circuit.

[0070] like Figure 3 As shown, ferrous oxide is one of the oxides of iron, formed by the covalent bonding of iron in its ferrous (divalent) state with oxygen. Ferrous iron has 24 electrons, and according to the rules of electron configuration, its electron configuration is 1s². 2 2s 2 2p 6 3s 2 3p 6 3D 6 In ferrous oxide, the 3d orbital readily loses an electron to form a more stable half-filled state. Therefore, ferrous oxide has some conductivity, but its resistance is slightly higher than that of iron. Consequently, ferrous oxide has a lower resistance, allowing the resistor switch to operate at lower resistance levels, and thus at medium to high power levels in the connected circuit.

[0071] like Figure 4 As shown, iron oxide is one of the oxides of iron, formed by the covalent bonding of iron in its ferric oxidation state (trivalent) with oxygen. Ferrous iron has 23 electrons, and according to the electron configuration rules, its electron configuration is 1s² + 2s². 2 2p 6 3s 2 3p 6 3D 5 Its 3d orbitals are in a stable, half-filled state, making it difficult to gain or lose electrons and thus difficult to conduct electricity. Therefore, ferric iron has a high resistivity and is poor at conducting electricity. Consequently, iron oxide has a high resistivity, causing a resistor switch to correspond to a high-resistance state, which in turn corresponds to the open state of the connected circuit.

[0072] Iron(III) oxide (Fe3O4) is an oxide of iron, formed by the covalent bonding of iron in its valence states (divalent and trivalent) with oxygen. Iron(III) oxide contains both ferrous and trivalent iron, which are arranged in a largely disordered manner at their octahedral positions. The interconversion between ferrous and trivalent iron accelerates electron transfer, resulting in a lower resistivity than ferrous oxide but higher than iron, and better electrical conductivity than ferrous oxide but worse than iron. Therefore, the high resistivity of iron(III) oxide allows a resistor switch to operate at higher resistance, thus enabling low-power conduction in the connected circuit.

[0073] The following will specifically explain the transformation of the material of the resistive switching element 300 in the resistive switch provided in this disclosure between iron, ferrous oxide, iron(III) oxide and iron oxide.

[0074] In some embodiments of this disclosure, the initial state of the resistive switching element 300 material is iron. It should be noted that the initial state in this disclosure is merely for ease of explanation of the cyclic transformation process of the resistive switching element 300 material. In some embodiments, the initial state of the resistive switching material is iron, while in other embodiments, the initial state of the resistive switching material may also be iron oxide, etc. Preferably, when initially manufacturing the resistive switch of this disclosure, the material of the resistive switching element 300 is iron.

[0075] like Figure 1 As shown, in this disclosure, the resistive switching element 300 includes multiple layers of resistive switching material stacked together, with the multiple layers of resistive switching material connected in parallel to form the resistive switching element 300. Further, the resistive switching material layers are solid iron. The layered structure of the resistive switching material layers helps to increase the contact area between the resistive switching material and oxidizing or reducing gases, thereby ensuring that the resistive switching material can smoothly undergo oxidation or reduction reactions and transform between metals and various metal oxides.

[0076] Specifically, the resistive switching material layer can be a mesh structure to further increase the contact area between the resistive switching material and the gas. In some embodiments, the mesh structure of the resistive switching material layer can be formed by pressing iron wire or by perforating multiple holes in an iron sheet.

[0077] In one specific embodiment, the initial state of the resistive switching element 300 material is iron, and the housing 100 is either in a vacuum state or filled with an inert gas. When the gas supply device 200 introduces a first volume of oxidizing gas into the housing 100, the material of the resistive switching element 300 changes from iron to ferrous oxide. The volume of the oxidizing gas is specifically set according to the reaction formula for the formation of ferrous oxide from iron. Specifically, in this embodiment, the oxidizing gas is oxygen. That is, when a first volume of oxygen is introduced into the housing 100, the material of the resistive switching element 300 changes from iron to ferrous oxide, and the specific reaction formula is: 2Fe + O2 → 2FeO. During this process, the amount of oxygen introduced is strictly set according to the iron content in the resistive switching element 300, and the molar ratio of iron to oxygen is 1:2. After the material of the resistive switching element 300 changes from iron to ferrous oxide during this process, the housing 100 is in a vacuum state or an inert gas state.

[0078] Further, after the material of the resistance varying member 300 becomes ferrous oxide, when the gas supply device 200 supplies a second volume of oxidizing gas into the housing 100, the material of the resistance varying member 300 changes from ferrous oxide to magnetite. The volume of the oxidizing gas is set according to the reaction formula of the reaction in which ferrous oxide is changed to magnetite. Specifically, in this embodiment, the oxidizing gas is oxygen. That is, when a second volume of oxygen is supplied into the housing 100, the material of the resistance varying member 300 changes from ferrous oxide to magnetite, and the reaction formula is 6FeO + O2→ 2Fe3O4. In this process, the amount of oxygen supplied is set according to the amount of ferrous oxide in the resistance varying member 300, and the ratio of the molar amount of ferrous oxide to the molar amount of oxygen is 6: 1. In this process, after the material of the resistance varying member 300 changes from ferrous oxide to magnetite, the inside of the housing 100 is in a vacuum state or an inert gas state.

[0079] Further, after the material of the resistance varying member 300 becomes ferrous oxide, when the gas supply device 200 supplies a second volume of oxidizing gas into the housing 100, the material of the resistance varying member 300 changes from ferrous oxide to magnetite. The volume of the oxidizing gas is set according to the reaction formula of the reaction in which ferrous oxide is changed to magnetite. Specifically, in this embodiment, the oxidizing gas is oxygen. That is, when a second volume of oxygen is supplied into the housing 100, the material of the resistance varying member 300 changes from ferrous oxide to magnetite, and the reaction formula is 6FeO + O2→ 2Fe3O4. In this process, the amount of oxygen supplied is set according to the amount of ferrous oxide in the resistance varying member 300, and the ratio of the molar amount of ferrous oxide to the molar amount of oxygen is 6: 1. In this process, after the material of the resistance varying member 300 changes from ferrous oxide to magnetite, the inside of the housing 100 is in a vacuum state or an inert gas state.

[0080] Specifically, in one embodiment, the oxidizing gas is oxygen. That is, when a third volume of oxygen is supplied into the housing 100, the material of the resistance varying member 300 changes from magnetite to iron oxide, and the reaction formula is 4Fe3O4 + O2→ 6Fe2O3. In this process, the amount of oxygen supplied is set according to the amount of magnetite in the resistance varying member 300, and the ratio of the molar amount of magnetite to the molar amount of oxygen is 4: 1. In this process, after the material of the resistance varying member 300 changes from magnetite to iron oxide, the inside of the housing 100 is in a vacuum state or an inert gas state.

[0081] In another embodiment, the oxidizing gas is ozone. That is, when a third volume of ozone is supplied into the housing 100, the material of the resistance varying member 300 changes from magnetite to iron oxide, and the reaction formula is 6Fe3O4 + O3→ 9Fe2O3. In this process, the amount of ozone supplied is set according to the amount of magnetite in the resistance varying member 300, and the ratio of the molar amount of magnetite to the molar amount of ozone is 6: 1. In this process, after the material of the resistance varying member 300 changes from magnetite to iron oxide, the inside of the housing 100 is in a vacuum state or an inert gas state.

[0082] Further, after the material of the resistance varying member 300 becomes ferrous oxide, when the gas supply device 200 supplies a second volume of oxidizing gas into the housing 100, the material of the resistance varying member 300 changes from ferrous oxide to magnetite. The volume of the oxidizing gas is set according to the reaction formula of the reaction in which ferrous oxide is changed to magnetite. Specifically, in this embodiment, the oxidizing gas is oxygen. That is, when a second volume of oxygen is supplied into the housing 100, the material of the resistance varying member 300 changes from ferrous oxide to magnetite, and the reaction formula is 6FeO + O2→ 2Fe3O4. In this process, the amount of oxygen supplied is set according to the amount of ferrous oxide in the resistance varying member 300, and the ratio of the molar amount of ferrous oxide to the molar amount of oxygen is 6: 1. In this process, after the material of the resistance varying member 300 changes from ferrous oxide to magnetite, the inside of the housing 100 is in a vacuum state or an inert gas state.

[0083] Specifically, in an embodiment, the reducing gas is hydrogen. That is, when hydrogen is introduced into the shell 100, the material of the resistance-changing member 300 is changed from iron oxide to iron, and the specific reaction formula is: Fe203+ 3H2→ 2Fe + 3H20. In this process, the amount of hydrogen introduced is strictly set according to the content of iron oxide in the resistance-changing member 300, and the ratio of the molar amount of iron oxide to the molar amount of hydrogen is 1:3. In this process, when the material of the resistance-changing member 300 is changed from iron oxide to iron, the shell 100 is in a vacuum state or an inert gas state.

[0084] In another embodiment, the reducing gas is carbon monoxide. That is, when carbon monoxide is introduced into the shell 100, the material of the resistance-changing member 300 is changed from iron oxide to iron, and the specific reaction formula is: Fe203+ 3CO→ 2Fe + 3CO2. In this process, the amount of carbon monoxide introduced is strictly set according to the content of iron oxide in the resistance-changing member 300, and the ratio of the molar amount of iron oxide to the molar amount of carbon monoxide is 1:3. In this process, when the material of the resistance-changing member 300 is changed from iron oxide to iron, the shell 100 is in a vacuum state or an inert gas state.

[0085] Based on the above process, the material of the resistance-changing member 300 can be cyclically changed among iron, ferrous oxide, magnetite, and iron oxide. The resistance switch of the present disclosure not only can realize the switching function, but also can realize the adjustment and control of different power required by the circuit.

[0086] In some embodiments of the present disclosure, the resistance switch further comprises a heating device (not shown in the figure, provided in the shell 100, for providing heat to the resistance-changing member 300, so as to ensure that the material of the resistance-changing member 300 can smoothly undergo the corresponding chemical reaction. For example, when the material of the resistance-changing member 300 needs to be changed from ferrous oxide to magnetite, the heating device is used to provide heat to the shell 100 to meet the high temperature condition required for the change of ferrous oxide to magnetite, so as to ensure the smooth progress of the chemical reaction. For another example, when the material of the resistance-changing member 300 needs to be changed from iron oxide to iron, the heating device is used to provide heat to the shell 100 to meet the high temperature condition required for the change of iron oxide to iron, so as to ensure the smooth progress of the chemical reaction.

[0087] In some embodiments of the present disclosure, the resistance switch further comprises a conductive member 400 connected to the resistance-changing member 300, and the resistance-changing member 300 is electrically connected to the external circuit through the conductive member 400. The conductive member 400 is used to realize the connection of the resistance switch and the external circuit, and the conductive member 400 can be formed of a metal conductive material. For example, the conductive member 400 is a conductive wire with an insulating layer, one end of the conductive wire is electrically connected to the resistance-changing member 300, and the other end of the conductive wire is used to be electrically connected to the external circuit, so as to connect the resistance switch of the present disclosure to the required circuit. Preferably, the periphery of the conductive member 400 can be coated with a high-temperature-resistant material.

[0088] As Figure 1 、 Figure 5 illustrated, the disclosure also provides a method for manufacturing a resistance switch, comprising the following steps:

[0089] Step S100, providing a resistance-changing component 300 and setting the resistance-changing component 300 in a sealed housing 100;

[0090] Step S200, providing a gas into the housing 100, so that the material of the resistance-changing component 300 is transformed between metal and multiple metal oxides based on the provided gas, the gas including oxidizing gas and reducing gas.

[0091] In some embodiments of the disclosure, the material of the resistance-changing component 300 is transformed between iron, ferrous oxide, magnetite and ferric oxide based on the provided gas.

[0092] Further, the initial state of the material of the resistance-changing component 300 is iron. Step S200 includes:

[0093] Step S210, introducing a first volume of oxidizing gas into the housing 100, so that the material of the resistance-changing component 300 is transformed from iron to ferrous oxide;

[0094] Step S220, introducing a second volume of oxidizing gas into the housing 100, so that the material of the resistance-changing component 300 is transformed from ferrous oxide to magnetite;

[0095] Step S230, introducing a third volume of oxidizing gas into the housing 100, so that the material of the resistance-changing component 300 is transformed from magnetite to ferric oxide;

[0096] Step S240, introducing reducing gas into the housing 100, so that the material of the resistance-changing component 300 is transformed from ferric oxide to iron.

[0097] The disclosure also provides a semiconductor device comprising the resistance switch of any of the above embodiments. The semiconductor device can be a memory or the like. Further, the resistance switch provided by the disclosure can be connected to the gate of a transistor to control the opening and closing of different states of a circuit.

[0098] It should be noted that although the steps of the method of the disclosure are described in a specific order in the accompanying drawings, this does not require or imply that the steps must be performed in this specific order, or that all the steps shown must be performed to achieve the desired result. Additional or alternative, some steps can be omitted, multiple steps can be combined into one step, and / or one step can be divided into multiple steps, etc., all of which should be considered as part of the disclosure.

[0099] It should be appreciated that the present disclosure is not limited to the details of construction and arrangement of parts set forth in the specification. The present disclosure is capable of other embodiments and of being practiced or being carried out in various ways. Variations and modifications of the foregoing are within the scope of the present disclosure. It should be understood that the present disclosure fully encompasses all combinations of two or more individual features set forth herein and / or in the appended claims. All these different combinations are considered to be within the scope of the present disclosure. The embodiments of the present disclosure as described are to be used as illustrative examples only and are not intended to limit the scope of the present disclosure in any way.

Claims

1. A resistance switch, comprising: a housing in a sealed hollow structure; a gas supply device arranged outside the housing and in communication with the housing for supplying a gas into the housing, the gas comprising an oxidizing gas and a reducing gas; a resistance variable element arranged in the housing, the material of the resistance variable element being transformed between a metal and a plurality of metal oxides based on the gas supplied by the gas supply device.

2. The resistance switch according to claim 1, wherein the material of the resistance variable element is transformed between iron, ferrous oxide, magnetite and ferric oxide based on the gas supplied by the gas supply device.

3. The resistance switch according to claim 2, wherein the material of the resistance variable element is initially in a state of iron; when a first volume of the oxidizing gas is supplied into the housing by the gas supply device, the material of the resistance variable element is transformed from iron to ferrous oxide.

4. The resistance switch according to claim 3, wherein after the material of the resistance variable element is transformed to ferrous oxide, when a second volume of the oxidizing gas is supplied into the housing by the gas supply device, the material of the resistance variable element is transformed from ferrous oxide to magnetite.

5. The resistance switch according to claim 4, wherein after the material of the resistance variable element is transformed to magnetite, when a third volume of the oxidizing gas is supplied into the housing by the gas supply device, the material of the resistance variable element is transformed from magnetite to ferric oxide.

6. The resistance switch according to claim 5, wherein after the material of the resistance variable element is transformed to ferric oxide, when the reducing gas is supplied into the housing by the gas supply device, the material of the resistance variable element is transformed from ferric oxide to iron.

7. The resistance switch according to claim 2, wherein the oxidizing gas comprises one or a combination of oxygen and ozone, and the reducing gas comprises one or a combination of hydrogen and carbon monoxide.

8. The resistance switch according to claim 1, wherein the gas further comprises an inert gas.

9. The resistance switch according to claim 1, wherein the resistance variable element comprises a plurality of layers of resistance variable material arranged in a stack, the plurality of layers of resistance variable material being connected in parallel.

10. The resistance switch according to claim 9, wherein the layers of resistance variable material are in a mesh structure.

11. The resistance switch according to claim 1, further comprising: a conductive element connected to the resistance variable element, the resistance variable element being electrically connected to an external circuit through the conductive element.

12. The resistance switch according to claim 1, further comprising: a heating device arranged in the housing for supplying heat to the resistance variable element.

13. A method for manufacturing a resistance switch, comprising: providing a resistance variable element and arranging the resistance variable element in a sealed housing; supplying a gas into the housing, the material of the resistance variable element being transformed between a metal and a plurality of metal oxides based on the gas supplied, the gas comprising an oxidizing gas and a reducing gas. ​ ​ ​ ​ 14. The method of claim 13, wherein the material of the resistance-switching element is configured to change between iron, ferrous oxide, magnetite and ferric oxide based on the provided gas.

15. The method of claim 14, wherein the material of the resistance-switching element is initially iron, and wherein the step of providing a gas into the housing to cause the material of the resistance-switching element to change between a metal and a plurality of metal oxides based on the provided gas comprises: providing a first volume of the oxidizing gas into the housing to cause the material of the resistance-switching element to change from iron to ferrous oxide; providing a second volume of the oxidizing gas into the housing to cause the material of the resistance-switching element to change from ferrous oxide to magnetite; providing a third volume of the oxidizing gas into the housing to cause the material of the resistance-switching element to change from magnetite to ferric oxide; and providing the reducing gas into the housing to cause the material of the resistance-switching element to change from ferric oxide to iron.

16. A semiconductor device, comprising the resistance switch of any one of claims 1-12. ​ ​ ​ ​ ​ ​ ​ ​

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