Method of manufacturing a semiconductor structure, semiconductor structure and semiconductor memory
By forming columnar and cup-shaped conductive structures in the lower electrode of the DRAM capacitor structure, the problem of balancing storage capacity and stability under high aspect ratio capacitors is solved, thereby improving both storage capacity and structural stability.
CN115643753BActive Publication Date: 2026-07-17CHANGXIN MEMORY TECH INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Filing Date
- 2021-07-20
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In high aspect ratio DRAM capacitor structures, it is difficult to maintain both sufficient capacitor storage capacity and stability at the same time.
Method used
A semiconductor structure is formed by forming bit line structures, active pillars, and word line structures on a substrate, and forming pillar-shaped conductive structures and cup-shaped conductive structures on the active pillars to form a lower electrode, which is then combined with a dielectric layer and an upper electrode.
Benefits of technology
While increasing the storage capacity of the capacitor, the stability of the semiconductor structure is improved, read/write interference is reduced, and the overall stability of the structure is enhanced.
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Smart Images
Figure CN115643753B_ABST
Abstract
Embodiments of the present application provide a preparation method of a semiconductor structure, a semiconductor structure and a semiconductor memory. The preparation method comprises: providing a substrate; sequentially forming a bit line structure, a plurality of active pillars and a word line structure on the substrate; wherein the bottom end of the plurality of active pillars is connected to the bit line structure, and the plurality of active pillars is connected to the word line structure; forming a columnar conductive structure on the active pillar, and forming a cup-shaped conductive structure on the columnar conductive structure, there is an electrode gap between the columnar conductive structure and the cup-shaped conductive structure, and the columnar conductive structure and the cup-shaped conductive structure jointly constitute a lower electrode; forming a dielectric layer on the surface of the lower electrode; forming an upper electrode layer on the surface of the dielectric layer, and the upper electrode layer fills the electrode gap. In this way, by forming a lower electrode with a lower half of a columnar conductive structure and an upper half of a cup-shaped conductive structure, the stability of the semiconductor structure can be improved.
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