A carrier plate and transfer device

Abstract

Embodiments of the present application provide a carrier plate and a transfer device. The carrier plate specifically includes a middle carrier substrate, a dissociation adjustment structure, and a dissociation adhesive layer arranged in sequence. The dissociation adjustment structure is configured to adjust the dissociation accuracy of the dissociation adhesive layer. The dissociation adhesive layer is configured to be connected with a plurality of light emitting diode chips. The carrier plate can improve the yield and dissociation accuracy of the light emitting diode chips, thereby improving the yield and efficiency of mass transfer of the light emitting diode chips during the mass transfer process.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of display, and particularly relates to a carrier plate and a transfer device. BACKGROUND

[0002] With the continuous development of display technology, light emitting diode display technology as a new type of display technology has gradually become one of the research hotspots. Light emitting diode display technology uses an array of light emitting diodes (LEDs) to display. Compared with other display technologies, light emitting diode display technology has the advantages of high luminous intensity, fast response speed, low power consumption, low voltage requirement, light and thin equipment, long service life, impact resistance, and strong anti-interference ability. Micro light emitting diodes (Micro-LEDs) with small size can better realize high-resolution products, such as 4K or even 8K resolution smartphones or virtual display screens.

[0003] In the production process of light emitting diode substrates, a carrier plate is usually used to realize mass transfer of light emitting diode chips. After the dissociation glue layer in the carrier plate is excited, gas is generated in the interior of the dissociation glue layer to form a microcavity before the dissociation glue layer is completely dissociated. Thus, the light emitting diode chips are prone to positional deviation during falling, which seriously reduces the transfer yield of the light emitting diode chips and the dissociation precision of the light emitting diode chips. SUMMARY

[0004] The present application aims to provide a carrier plate and a transfer device to solve the problems of low transfer yield and low dissociation precision of existing light emitting diode chips.

[0005] In a first aspect, the present application discloses a carrier plate, comprising: a middle carrier substrate, a dissociation adjustment structure, and a dissociation glue layer arranged in sequence, the dissociation adjustment structure is configured to adjust the dissociation precision of the dissociation glue layer, and the dissociation glue layer is configured to be connected with a plurality of light emitting diode chips.

[0006] Optionally, the dissociation adjustment structure comprises a plurality of adjustment microstructures, each adjustment microstructure corresponds to one light emitting diode chip; wherein,

[0007] The orthographic projection of the adjustment microstructure on the middle carrier substrate is a first projection, and the orthographic projection of the light emitting diode chip on the middle carrier substrate is a second projection.

[0008] The first projection of each adjustment microstructure at least partially overlaps with the second projection of the corresponding light emitting diode chip, and the area of the first projection is less than or equal to the area of the second projection.

[0009] Optionally, the adjusting microstructure comprises an arc-shaped protrusion arranged on the side of the dissociation adhesive layer close to the middle carrier substrate.

[0010] Optionally, the middle carrier substrate is provided with a first arc-shaped groove at a position opposite to the arc-shaped protrusion, the shape of the first arc-shaped groove is adapted to the shape of the arc-shaped protrusion, and the arc-shaped protrusion is embedded in the first arc-shaped groove.

[0011] Optionally, the carrier substrate further comprises a medium layer arranged between the middle carrier substrate and the dissociation adhesive layer, the medium layer is provided with a second arc-shaped groove at a position opposite to the arc-shaped protrusion, the shape of the second arc-shaped groove is adapted to the shape of the arc-shaped protrusion, and the arc-shaped protrusion is embedded in the second arc-shaped groove.

[0012] Optionally, the thickness of the medium layer is greater than the depth of the second arc-shaped groove.

[0013] Optionally, the thickness of the dissociation adhesive layer is greater than the depth of the arc-shaped protrusion.

[0014] Optionally, the adjusting microstructure comprises a grating, and the central region of the orthographic projection of the grating on the middle carrier substrate at least partially overlaps with the orthographic projection of the light-emitting diode chip on the middle carrier substrate.

[0015] Optionally, the slit width and the passband width of the grating are both greater than the wavelength of the dissociation light.

[0016] The height of the grating is 1000-3000A, and the slit width and the passband width of the grating are both 500-1400A.

[0017] Optionally, the orthographic projection of the grating on the middle carrier substrate is a third projection, the orthographic projection of the light-emitting diode chip on the middle carrier substrate is a second projection, and the area of the third projection is 5%-10% of the area of the second projection.

[0018] Optionally, the carrier substrate further comprises a microlens structure arranged on the side of the middle carrier substrate away from the dissociation adhesive layer.

[0019] The orthographic projection of the microlens structure on the middle carrier substrate at least partially overlaps with the edge region of the orthographic projection of the light-emitting diode chip on the middle carrier substrate.

[0020] Optionally, the grating is located on the side of the middle carrier substrate close to the dissociation adhesive layer.

[0021] Optionally, the adjusting microstructure comprises a plurality of pre-arrangement units, a projection of the pre-arrangement units on the carrier substrate at least partially overlaps with a projection of the LED chip on the carrier substrate, and the dissociation adhesive layer is provided with a plurality of protrusions on a side away from the carrier substrate, one protrusion corresponding to one pre-arrangement unit, and an exhaust passage being formed between adjacent protrusions.

[0022] Optionally, the pre-arrangement unit is made of transparent material.

[0023] Optionally, the height of the pre-arrangement unit is 15000-20000 angstroms, and the width of the pre-arrangement unit in any direction is greater than 2.5 um.

[0024] Optionally, a plurality of pre-arrangement units are provided corresponding to each LED chip, and a certain distance is provided between adjacent pre-arrangement units.

[0025] Optionally, the dissociation adhesive layer comprises a laser dissociation layer and an adhesive material layer, the laser dissociation layer is located on a side of the carrier substrate close to the LED chip, and the adhesive material layer is located between the laser dissociation layer and the LED chip.

[0026] The side of the adhesive material layer close to the laser dissociation layer is provided with a first microstructure, the side of the laser dissociation layer close to the adhesive material layer is provided with a second microstructure, the second microstructure is complementary to the shape of the first microstructure, and the second microstructure and the first microstructure are embedded with each other.

[0027] Optionally, the thickness of the laser dissociation layer is 1-3 um, and the thickness of the adhesive material layer is 1-10 um.

[0028] Optionally, the first microstructure is a nano microstructure, and the first microstructure is selected from at least one of a conical microstructure and a prismatic microstructure.

[0029] Optionally, the first microstructure is a cone, the height of the cone is 0.2-1 um, the diameter of the bottom surface of the cone is 100-500 nm, and the included angle between the side surface of the cone and the bottom surface is 15-60°.

[0030] Optionally, the refractive index of the adhesive material layer is greater than or equal to 1.5, and the light transmittance of the adhesive material layer is greater than or equal to 97%.

[0031] In a second aspect, the embodiments of the present application further disclose a transfer device, comprising a plurality of LED chips and the carrier plate of any one of the above, and the plurality of LED chips are connected to the dissociation adhesive layer of the carrier plate.

[0032] In the embodiment of the present application, the dissociation adjusting structure is arranged between the dissociation adhesive layer and the middle carrier substrate, which can adjust the dissociation precision of the dissociation adhesive layer in the mass transfer process of the light emitting diode chip. In this way, the position deviation of the light emitting diode chip in the falling process can be avoided, and the yield and dissociation precision of the light emitting diode chip are improved, so that the yield and mass transfer efficiency of the light emitting diode chip in the mass transfer process can be improved. Additional aspects and advantages of the present application will be in part apparent and in part pointed out hereinafter in the description. BRIEF DESCRIPTION OF DRAWINGS

[0033] The above and / or additional aspects and advantages of the present application will become apparent and be readily appreciated from the following description, including the accompanying drawings, in which:

[0034] Figure 1 A schematic diagram of a prior art carrier plate for transferring light emitting diode chips is shown schematically;

[0035] Figure 2 A schematic diagram of a prior art carrier plate for transferring light emitting diode chips is shown schematically; Figure 1 A detailed structure diagram of the middle A position is shown schematically;

[0036] Figure 3 A schematic diagram of a carrier plate according to an embodiment of the present application is shown schematically;

[0037] Figure 4 A schematic diagram of a dissociation adhesive layer according to an embodiment of the present application is shown schematically;

[0038] Figure 5 A schematic diagram of a dissociation adhesive layer according to an embodiment of the present application is shown schematically; Figure 3 A schematic diagram of the middle carrier substrate in the carrier plate is shown schematically;

[0039] Figure 6 A schematic diagram of another carrier plate according to an embodiment of the present application is shown schematically;

[0040] Figure 7 A schematic diagram of another carrier plate according to an embodiment of the present application is shown schematically; Figure 6 A schematic diagram of the carrier plate without the dissociation adhesive layer is shown schematically;

[0041] Figure 8 A schematic diagram of another carrier plate according to an embodiment of the present application is shown schematically;

[0042] Figure 9 A schematic diagram of another carrier plate according to an embodiment of the present application is shown schematically; Figure 8 A top view schematic diagram of the carrier plate is shown schematically;

[0043] Figure 10A schematic diagram of another carrier plate according to an embodiment of this application is shown.

[0044] Figure 11 A schematic diagram of another carrier plate according to an embodiment of this application is shown.

[0045] Figure 12 schematically shown Figure 11 One of the processing status diagrams of the carrier plate shown;

[0046] Figure 13 schematically shown Figure 11 The second diagram showing the processing state of the carrier plate;

[0047] Figure 14 A schematic diagram of another carrier plate of this application is shown.

[0048] Figure 15 A schematic diagram of the structure of another carrier plate according to an embodiment of this application is shown.

[0049] Figure 16 schematically shown Figure 15 One of the detailed processing diagrams of the carrier plate shown;

[0050] Figure 17 schematically shown Figure 15 The second schematic diagram showing the specific processing of the carrier plate;

[0051] Figure 18 schematically shown Figure 15 The third schematic diagram showing the specific processing of the carrier plate;

[0052] Figure 19 schematically shown Figure 15 The fourth schematic diagram showing the specific processing of the carrier plate;

[0053] Figure 20 A flowchart illustrating the steps of a carrier plate processing method according to an embodiment of this application is shown schematically.

[0054] Explanation of reference numerals in the attached figures: 10-Substrate, 101-First arc-shaped groove, 11-Dielectric layer, 111-Second arc-shaped groove, 12-Disintegrating adhesive layer, 121-Arc-shaped protrusion, 122-Protrusion, 123-Laser disintegrating layer, 1231-Second microstructure, 124-Adhesive layer, 1241-First microstructure, 13-Raster, 14-Microlens structure, 15-Pre-arranged unit, 20-Light-emitting diode chip, 201-Light-emitting layer, 202-First electrode, 203-Second electrode, 30-Mask, S-Microcavity, S2-Second projection, S3-Third projection, L-Exhaust channel. Detailed Implementation

[0055] Embodiments of the present application will be described in detail below with reference to the drawings, in which like or similar elements or components perform the same or similar functions and / or are designated with the same reference numerals throughout the drawings. The embodiments described below are examples only, and are not intended to limit the present application in any way. As such, the following description discloses only typical aspects of the application and is not intended to limit the application to the described embodiments. Numerous specific details are described in order to provide a thorough understanding of the present application. However, in certain cases, well known methods, procedures, components, and circuits have been omitted in order to avoid obscuring the present application. For the most part, these methods, procedures, components, and circuits are the same as those known in the art.

[0056] The terms "first", "second", etc. in the specification and claims of the present application can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specified. In addition, "and / or" in the specification and claims means at least one of the connected objects, and the character " / " generally means that the front and rear associated objects are in an "or" relationship.

[0057] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0058] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0059] Referring to Figure 1 , a schematic diagram of a carrier plate for transferring light emitting diode chips is shown, referring to Figure 2 , a detailed structure schematic diagram of position A in Figure 1 is shown. Specifically, the carrier plate can include a carrier substrate 10 and a dissociation adhesive layer 12, and the dissociation adhesive layer 12 can be configured to be connected with a plurality of light emitting diode chips 20.

[0060] As Figure 1As shown, dissociation light (such as...) Figure 1 (As indicated by the arrow in the image) The light can be irradiated onto the dissociative adhesive layer 12 through a mask. Under the irradiation of the dissociative light, the dissociative adhesive layer 12 can be vaporized and decomposed, allowing the light-emitting diode chip 20 to separate from the intermediate substrate 10. The light-emitting diode chip 20 can then fall and be transferred to the driving substrate of the display device, realizing the mass transfer of the light-emitting diode chip 20.

[0061] like Figure 2 As shown, after the dissociation light irradiates the dissociation adhesive layer 12, the intensity of the dissociation light energy in the central region of the dissociation adhesive layer 12 is higher than that in the edge region. Therefore, the central region of the dissociation adhesive layer 12 will preferentially dissociate to form a microcavity S, and the gas generated by the vaporization of the dissociation adhesive layer 12 will also exist in the microcavity 12. After the dissociation adhesive layer 12 is completely dissociated, the uncertainty of the gas impact in the microcavity S will cause deviations in the falling posture and position of the LED chip 20. This can easily cause the LED chip 20 to shift position during the falling process, severely reducing the transfer yield of the LED chip 20 and reducing the dissociation accuracy of the LED chip 20.

[0062] like Figure 2 As shown, the light-emitting diode (LED) chip 20 may include a sandwich-structured light-emitting layer 201 and a first electrode 202 and a second electrode 203 disposed on the same side of the light-emitting layer 201. The light-emitting layer 201 may be a semiconductor thin film layer, which may be made of materials such as P-GaN, MQW, or N-GaN. The first electrode 202 may be a positive electrode, and the second electrode 203 may be a negative electrode. During the transfer process, the side of the LED chip 20 without electrodes can face the release adhesive layer 12, and the side of the LED chip 20 with electrodes can face the driving substrate. After the LED chip 20 is dropped, the first electrode 202 and the second electrode 203 can be fixedly connected to the pads on the driving substrate.

[0063] Reference Figure 3 The diagram shows a structural schematic of a carrier plate according to an embodiment of this application, such as... Figure 3 As shown,

[0064] The carrier board may specifically include: a central substrate 10, a dissociation adjustment structure, and a dissociation adhesive layer 12 arranged sequentially. The dissociation adjustment structure can be configured to adjust the dissociation accuracy of the dissociation adhesive layer 12, and the dissociation adhesive layer 12 can be configured to be connected to multiple light-emitting diode chips 20.

[0065] Specifically, the dissociation adhesive layer 12 of the carrier substrate can be configured to connect a plurality of light emitting diode chips 20, which can be arrayed on the carrier substrate. The light emitting diode chips 20 can be light emitting diode chips emitting the same color or light emitting diode chips capable of emitting different colors, which are not limited in the embodiments of the present application.

[0066] Specifically, the dissociation adhesive layer 12 can be a laser dissociation adhesive. By irradiating laser to a partial region of the carrier substrate 10, the dissociation adhesive layer 12 corresponding to the region can be dissociated, so that the light emitting diode chip 20 in the region is detached and transferred to the driving substrate. Alternatively, the dissociation adhesive layer 12 can also be a thermal dissociation adhesive. At this time, the dissociation adhesive layer 12 corresponding to a region can be dissociated by heating the region of the carrier substrate 10, so that the light emitting diode chip 20 in the region is detached and transferred to the driving substrate.

[0067] For example, when it is required to transfer the light emitting diode chip 20 on the carrier substrate 10 to the driving substrate, the carrier substrate 10 can be arranged above the driving substrate according to the direction of gravity, i.e., the carrier substrate 10 and the driving substrate are arranged in turn along the direction of gravity, so that the gravity can cooperate with the above-mentioned dissociation adhesive layer 12 to transfer the light emitting diode chip 20 required to be transferred on the carrier substrate 10 to the driving substrate.

[0068] In the embodiments of the present application, since the dissociation adjustment structure is arranged between the dissociation adhesive layer 12 and the carrier substrate 10, the dissociation adjustment structure can adjust the dissociation precision of the dissociation adhesive layer 12 in the mass transfer process of the light emitting diode chip 20. In this way, the position deviation of the light emitting diode chip 20 in the falling process can be avoided, the yield and the dissociation precision of the light emitting diode chip 20 are improved, so that the yield and the mass transfer efficiency of the light emitting diode chip 20 in the mass transfer process can be improved.

[0069] In some optional embodiments of the present application, the dissociation adjustment structure can include a plurality of adjustment microstructures, each of which corresponds to a light emitting diode chip 20; wherein the orthographic projection of the adjustment microstructure on the carrier substrate 10 is a first projection, and the orthographic projection of the light emitting diode chip 20 on the carrier substrate 10 is a second projection; the first projection of each adjustment microstructure at least partially overlaps with the second projection of the light emitting diode chip 20 corresponding thereto, and the area of the first projection is less than or equal to the area of the second projection.

[0070] Specifically, the adjusting microstructure can be a pattern and microstructure, a grating, a microlens, or a pre-set structure, etc. The microstructure can optimize the interface topography of the separation adhesive layer 12. In this way, the separation adhesive layer 12 can automatically exhaust air in the periphery during the separation process. By setting the adjusting microstructure corresponding to each light emitting diode chip 20, the problem of light emitting diode chip 20 deviation caused by poor exhaust can be effectively solved.

[0071] For example, the adjusting microstructure can be arranged in the central region of the light emitting diode chip 20, so that the central regions of the first projection and the second projection overlap. Alternatively, the microstructure can also be arranged in the edge region of the light emitting diode chip 20, so that the edge regions of the first projection and the second projection overlap. Alternatively, the micro-adjusting structure can also be arranged on the entire outer surface region of the light emitting diode chip 20, so that the first projection and the second projection completely overlap. The specific position of the micro-adjusting structure relative to the light emitting diode chip 20 is not limited in the present application.

[0072] As shown in Figure 3 , the adjusting microstructure can specifically include an arc-shaped protrusion 121 arranged on the side of the separation adhesive layer 12 close to the carrier substrate 10.

[0073] Referring to Figure 4 , a structure diagram of a separation adhesive layer is shown, as shown in Figure 4 , because the arc-shaped protrusion 121 is arranged on the side of the separation adhesive layer 12 close to the carrier substrate 10, the thickness of the central region of the separation adhesive layer 12 is greater than that of the edge region. In the case of achieving the same degree of separation, the energy of the separation light required by the central region of the separation adhesive layer 12 is greater than that of the edge region. When the separation light is irradiated on the arc-shaped protrusion 121, the energy of the separation light irradiated on the arc-shaped protrusion 121 generally decreases from the central region to the edge region. In this way, by arranging the arc-shaped protrusion 121 on the separation adhesive layer 12, the thickness of the separation adhesive layer 12 can be decreased from the central region to the edge region, and the energy distribution of the separation light can be adapted, so that the central region and the edge region of the separation adhesive layer 12 can achieve the same degree of separation, avoiding the microcavity and gas generated by the central region of the separation adhesive layer 12 separating first, so that the light emitting diode chip 20 can be free from the impact of the gas, avoiding the position deviation of the light emitting diode chip 20 during the falling process, improving the yield and separation precision of the light emitting diode chip 20. Further, the yield and the efficiency of the mass transfer of the light emitting diode chip 20 during the mass transfer process can be improved.

[0074] It should be noted that in actual application, the curvature of the arc-shaped protrusion 121 can be set according to the energy distribution of the separation light, and the curvature of the arc-shaped protrusion is not limited in the present application.

[0075] Reference Figure 5 , showed Figure 3 The schematic diagram of the structure of the intermediate substrate in the carrier plate is shown below. Figure 5 As shown, the intermediate substrate 10 has a first arc-shaped groove 101 at a position opposite to the arc-shaped protrusion 121. The shape of the first arc-shaped groove 101 is adapted to the shape of the arc-shaped protrusion 121, and the arc-shaped protrusion 121 is embedded in the first arc-shaped groove 101.

[0076] In this embodiment, a first arc-shaped groove 101 can be formed on the intermediate substrate 10 firstly. Then, a release adhesive can be coated on the side where the first arc-shaped groove 101 is formed. The release adhesive can flow into the first arc-shaped groove 101, thus forming an arc-shaped protrusion 121 on the final release adhesive layer 12. Directly forming the first arc-shaped groove 101 on the intermediate substrate 10 makes the structure of the carrier plate simpler and its height lower.

[0077] Specifically, the shape adaptation of the first arc-shaped groove 101 and the arc-shaped protrusion 121 may include: the first arc-shaped groove 101 and the arc-shaped protrusion 121 having the same shape, or the first arc-shaped groove 101 being slightly larger than the arc-shaped protrusion 121, so as to form the arc-shaped protrusion 121 within the first arc-shaped groove 101.

[0078] Reference Figure 6 This shows a schematic diagram of another carrier plate according to an embodiment of this application. Figure 7 , showed Figure 6 The diagram shows the structure of the carrier plate after the release adhesive layer has been removed. Figure 6 As shown, the carrier plate may further include: a dielectric layer 11, which is disposed between the intermediate substrate 10 and the release adhesive layer 12. The dielectric layer 11 has a second arc-shaped groove 111 at a position opposite to the arc-shaped protrusion 121. The shape of the second arc-shaped groove 111 is adapted to the shape of the arc-shaped protrusion 121, and the arc-shaped protrusion 121 is embedded in the second arc-shaped groove 111.

[0079] In practical applications, since the intermediate substrate 10 is usually made of glass, the process of directly forming the arc-shaped groove on the intermediate substrate 10 is generally complex and costly. To reduce process complexity and cost, a dielectric layer 11 can be formed on the intermediate substrate 10 before forming the release adhesive layer 12. Then, a second arc-shaped groove 111 can be formed on the dielectric layer 11, which is a simpler process. Finally, the release adhesive is coated on the dielectric layer 11 to form the release adhesive layer 12 with arc-shaped protrusions 121. In this way, the operation of directly forming the arc-shaped groove on the glass intermediate substrate 10 can be avoided.

[0080] Optionally, the material of the medium layer 11 can be at least one of silicon oxide and silicon nitride. In actual application, when the material of the medium layer 11 is silicon oxide or silicon nitride, the photolithography process can be facilitated on the medium layer 11. Specifically, the photolithography process can be used to form the second arc-shaped groove 111 with a certain arc at the position where the light-emitting diode chip 20 needs to be connected. Then, the dissociation glue is coated on the side of the medium layer 11 where the second arc-shaped groove 111 is formed. The dissociation glue can flow into the second arc-shaped groove 111, so that the arc-shaped protrusion 121 can be formed on the finally formed dissociation glue layer 12. The photolithography process is used to form the second arc-shaped groove 111 on the medium layer 11, which can make the processing technology of the second arc-shaped groove 111 relatively simple and the processing cost relatively low.

[0081] Specifically, the shape adaptation between the second arc-shaped groove 111 and the arc-shaped protrusion 121 can specifically include that the shape of the second arc-shaped groove 111 is the same as that of the arc-shaped protrusion 121, or the second arc-shaped groove 111 is slightly larger than the arc-shaped protrusion 121, so as to facilitate the formation of the arc-shaped protrusion 121 in the second arc-shaped groove 111.

[0082] Optionally, the thickness of the medium layer 11 can be greater than the depth of the second arc-shaped groove 111, so as to facilitate the formation of the complete second arc-shaped groove 111 on the medium layer 11. In this way, it can be avoided that the medium layer 11 is etched completely to expose the carrier substrate 10 in the process of photolithography, the regularity and integrity of the second arc-shaped groove 111 on the medium layer 11 are improved, and then the arc-shaped protrusion 121 with regular and complete shape is facilitated to be obtained.

[0083] It should be noted that the depth of the second arc-shaped groove 111 can be specifically the depth corresponding to the deepest position of the second arc-shaped groove 111.

[0084] For example, when the depth of the second arc-shaped groove 111 is greater than or equal to 1000A, the thickness of the second medium layer 11 can be 5000-10000A. The depth of the second arc-shaped groove 111 is greater than or equal to 1000A and less than the thickness of the medium layer 11.

[0085] In some optional embodiments of the present application, the thickness of the dissociation glue layer 12 is greater than the depth of the arc-shaped protrusion 121, so as to realize the reliable bonding of the light-emitting diode chip 21 on the carrier substrate 10.

[0086] It should be noted that the depth of the arc-shaped protrusion 121 can be specifically the depth corresponding to the highest position of the arc-shaped protrusion 121.

[0087] Specifically, the thickness of the separation adhesive layer 12 can be determined according to actual use effect. For example, the thickness of the separation adhesive layer 12 can be 1-5 um, the thickness of the medium layer 11 can be higher than 3000 A, and the depth of the arc-shaped protrusion 121 can be 500-2500 A.

[0088] Referring to Figure 8 , another structure diagram of a carrier plate is shown, as Figure 8 indicated, the adjusting microstructure can include a grating 13, and the normal projection of the grating 13 on the carrier substrate 10 at least partially overlaps with the central region of the normal projection of the light-emitting diode chip 20 on the carrier substrate 10.

[0089] Specifically, the central region of the normal projection of the light-emitting diode chip 20 on the carrier substrate 10 can be a region covered by a circle drawn with the normal projection of the center of the light-emitting diode chip 20 as the center and a preset distance as the radius, and the preset distance can be 10%-50% of the distance from the center of the light-emitting diode chip 20 to the edge; or, the central region can also be a region close to the normal projection of the center of the light-emitting diode chip 20. The region outside the central region in the normal projection of the light-emitting diode chip 20 on the carrier substrate 10 can be an edge region.

[0090] In actual application, the grating 13 can be located on the side of the carrier substrate 10 close to the separation adhesive layer 12. In the case of separation light entering from the side of the carrier substrate 10, diffraction can occur at the grating 13, reducing the energy of the separation light. In the embodiment of the present application, by arranging the grating 13 in the central region of the separation adhesive layer 12, the normal projection of the grating 13 on the carrier substrate 10 at least partially overlaps with the central region of the normal projection of the light-emitting diode chip 20 on the carrier substrate 10. Due to the diffraction of the grating 13, the energy of the separation light irradiating the central region of the separation adhesive layer 12 can be reduced, so that the light irradiating the central region and the edge region of the separation adhesive layer 12 can be more uniform, and the central region and the edge region of the separation adhesive layer 12 can achieve the same degree of separation, so as to avoid the microcavity and gas generated by the central region of the separation adhesive layer 12 from being separated first, avoid the impact of the gas, avoid the position deviation of the light-emitting diode chip 20 during falling, improve the yield and separation precision of the light-emitting diode chip 20, and further improve the yield and efficiency of the mass transfer of the light-emitting diode chip 20 during mass transfer.

[0091] In the embodiment of the present application, the slit width and the passband width of the grating 13 are both greater than the wavelength of the separation light, so that the separation light can be better diffracted at the grating 13. For example, in the case that the wavelength of the separation light is 266-355 nm, the slit width and the passband width of the grating 13 can be 500-1400 A.

[0092] For example, the height of the grating 13 can be 1000-3000A. Since the height of the grating 13 is low, when the grating 13 continues to be coated with the dissociation glue, the surface of the dissociation glue layer 12 is relatively flat, and it is difficult to form a significant protrusion on the surface of the dissociation glue layer 12, so that the connection reliability of the light-emitting diode chip can be achieved.

[0093] Referring to Figure 9 , a top view structural diagram of the carrier plate is shown, as Figure 8 indicated, the orthogonal projection of the grating 13 on the carrier plate 10 is a third projection S3, and the orthogonal projection of the light-emitting diode chip 20 on the carrier plate 10 is a second projection S2. As Figure 9 indicated, the third projection S3 can overlap the central region of the second projection S2. Figure 9

[0094] In a specific application, when the uniformity of the dissociation light is 5%, the area of the third projection S3 is 5%-10% of the area of the second projection S2, so as to improve the uniformity of the dissociation light irradiating the dissociation glue layer 20, so that the central region and the edge region of the dissociation glue layer 12 can be dissociated synchronously. For example, in order to take into account the uniformity of the dissociation light and the flatness of the surface of the dissociation glue layer 12, the area of the third projection S3 can be less than 7% of the area of the second projection S2.

[0095] Referring to Figure 10 , a structural diagram of another carrier plate of an embodiment of the present application is shown, as Figure 10 indicated, on the basis of the carrier plate shown in Figure 8 , the carrier plate shown in Figure 10 may include: a microlens structure 14, the microlens structure 14 is arranged on the side of the carrier plate 10 away from the dissociation glue layer 12, and the microlens structure 14 can be used for energy convergence to adjust the uniformity of the dissociation light entering the carrier plate 10, so that the central region and the edge region of the dissociation glue layer 12 can be dissociated synchronously.

[0096] In actual application, the microlens structure 14 can be arranged in the area where the dissociation light is weak. In an optional embodiment of the present application, the orthogonal projection of the microlens structure 14 on the carrier plate 10 at least partially overlaps the edge region of the orthogonal projection of the light-emitting diode chip 20 on the carrier plate 10, that is, the microlens structure 14 can be arranged at a position corresponding to the edge region of the light-emitting diode chip 20.

[0097] ​In practical applications, since the weaker dissociation light is concentrated in the area corresponding to the edge region of the light-emitting diode chip 20, by setting the microlens 14 in the area corresponding to the edge region of the light-emitting diode chip 20, the microlens structure 14 can be used to focus the energy of the dissociation light in the edge region of the light-emitting diode chip 20.

[0098] It should be noted that the arrangement area of ​​the microlens structure 14 can be determined according to the actual situation of the dissociated light, and the embodiment of this application does not specifically limit the arrangement area of ​​the microlens structure 14. The material of the microlens structure 14 is a conventional lens material, such as light-transmitting resin or glass, and the radius of curvature of the microlens structure 14 is determined according to the actual light-gathering effect, and the embodiment of this application does not limit it.

[0099] Reference Figure 11 The diagram shows a structural schematic of another carrier plate according to an embodiment of this application, as follows. Figure 11 As shown, the adjustment microstructure may include: a plurality of pre-arranged units 15, the orthographic projection of the plurality of pre-arranged units 15 on the intermediate substrate 10 at least partially overlapping the orthographic projection of the light-emitting diode chip 20 on the intermediate substrate 10, a plurality of protrusions 122 formed on the side of the dissociation adhesive layer 12 away from the intermediate substrate 10, one protrusion 122 corresponding to one pre-arranged unit 15, and an exhaust channel L formed between adjacent protrusions 122. In this way, the gas generated by the dissociation and vaporization of the dissociation adhesive layer 12 can be discharged from the exhaust channel L, thereby protecting the light-emitting diode chip 20 from the impact of the gas during the falling process, avoiding the positional displacement of the light-emitting diode chip 20 during the falling process, improving the yield and dissociation accuracy of the light-emitting diode chip 20, and further improving the yield and mass transfer efficiency of the light-emitting diode chip 20 during the mass transfer process.

[0100] Reference Figure 12 , showed Figure 11 One of the processing status diagrams of the carrier plate is shown. (For example...) Figure 12 As shown, in a specific application, during the processing of the carrier board, multiple array-distributed pre-arranged units 15 can be set at the positions where the light-emitting diode chips 20 need to be connected on the intermediate carrier substrate 10.

[0101] It should be noted that in practical applications, the intermediate substrate 10 and the pre-arrangement unit 15 can be designed as an integral structure or as a separate structure. In this application embodiment, the connection form between the intermediate substrate 10 and the pre-arrangement unit 15 is not limited.

[0102] Reference Figure 13 , showed Figure 11 The second diagram showing the processing state of the carrier plate is as follows: Figure 13As shown, after the plurality of pre-arrangement units 15 are arranged on the carrier substrate 10, a layer of dissociation adhesive can be coated on one side of the pre-arrangement units 15 arranged on the carrier substrate 10 to form the dissociation adhesive layer 12.

[0103] Specifically, due to the blocking effect of the pre-arrangement units 15, the pre-arrangement units 15 can prevent the dissociation adhesive from flowing, and in addition, the dissociation adhesive itself has a certain viscosity, so it is difficult for the dissociation adhesive to flow by itself to flatten the position of the pre-arrangement units 15. Thus, a protrusion 122 can be formed at the position corresponding to the pre-arrangement units 15, so as to form an exhaust passage L between adjacent protrusions 122. During the dissociation of the dissociation adhesive layer 12, the gas generated by the dissociation and vaporization of the dissociation adhesive layer 12 can be discharged from the exhaust passage L, so that the light emitting diode chip 20 can be protected from the impact of the gas during the falling process, and the position deviation of the light emitting diode chip 20 during the falling process can be avoided, thereby improving the yield and dissociation accuracy of the light emitting diode chip 20.

[0104] In the embodiment of the present application, the pre-arrangement units 15 can be made of transparent material, so that the dissociation light can pass through the pre-arrangement units 15 to irradiate on the dissociation adhesive layer 12, thereby avoiding the influence of the pre-arrangement units 15 on the intensity of the dissociation light. For example, the transparent material can be selected from at least one of silicon oxide and silicon nitride, and the transparent material is not limited in the embodiment of the present application.

[0105] For example, the height of the pre-arrangement units 15 can be 15000-20000A, so that the pre-arrangement units 15 can effectively block the dissociation adhesive and form regular protrusions 122 on the surface of the dissociation adhesive layer 12.

[0106] Of course, in actual application, the height of the pre-arrangement units 15 needs to be determined according to the actual thickness of the dissociation adhesive layer 12. The greater the thickness of the dissociation adhesive layer 12, the higher the height of the pre-arrangement units 15. Generally, in order to achieve better blocking effect, the difference between the height of the pre-arrangement units 15 and the height of the dissociation adhesive layer 12 should be less than or equal to 1um.

[0107] For example, the width of the pre-arrangement units 15 in any direction should be greater than or equal to 2.5um, so that the pre-arrangement units 15 have better processing performance.

[0108] For example, the cross-sectional shape of the pre-arrangement units 15 can include but is not limited to a circle, a rectangle or other polygons, and the specific shape of the pre-arrangement units 15 is not limited in the embodiment of the present application. In the case that the cross-sectional shape of the pre-arrangement units 15 is a circle, the diameter of the circle should be greater than or equal to 2.5um; in the case that the cross-sectional shape of the pre-arrangement units 15 is a rectangle, the shortest side length of the rectangle should be greater than or equal to 2.5um.

[0109] In some optional embodiments of the present application, each light emitting diode chip 20 is provided with a plurality of pre-arrangement units 15, and the distance between two adjacent pre-arrangement units 15 is such that a plurality of independent exhaust channels L can be formed between the light emitting diode chip 20 and the separation glue layer 12, so as to further improve the stability of the exhaust.

[0110] With reference to Figure 14 , another structure diagram of the carrier plate is shown, as shown in Figure 14 , the carrier plate can include a medium layer 11, the medium layer 11 is provided with a second arc-shaped groove 111 at a position opposite to the arc-shaped protrusion 121, and the second arc-shaped groove 111 is further provided with a pre-arrangement unit 15 away from the side of the carrier substrate 10. In this way, the arc-shaped protrusion 121 can be formed on the finally formed separation glue layer 12, and a plurality of independent exhaust channels L can be formed between the light emitting diode chip 20 and the separation glue layer 12, so as to further improve the stability of the exhaust. Thus, the position deviation of the light emitting diode chip 20 during the falling process can be avoided, and the yield and separation accuracy of the light emitting diode chip 20 can be improved. Further, the yield and the efficiency of the mass transfer of the light emitting diode chip 20 during the mass transfer process can be improved.

[0111] In actual application, the material of the pre-arrangement unit 15 can be photoresist, and the pre-arrangement unit 15 in the second arc-shaped groove 111 can be made by mask.

[0112] With reference to Figure 15 , another structure diagram of the carrier plate is shown, as shown in Figure 15 , the separation glue layer 12 can include a laser separation layer 123 and an adhesive glue material layer 124, the laser separation layer 123 is located on the side of the carrier substrate 10 close to the light emitting diode chip 20, and the adhesive glue material layer 124 is located between the laser separation layer 123 and the light emitting diode chip 20; wherein the side of the adhesive glue material layer 124 close to the laser separation layer 123 is provided with a first microstructure 1241, and the side of the laser separation layer 123 close to the adhesive glue material layer 124 is provided with a second microstructure 1231, the shape of the second microstructure 1231 and the first microstructure 1241 is complementary, and the second microstructure 1231 and the first microstructure 1241 are embedded with each other.

[0113] In the embodiment of the present application, when the dissociation light irradiates the dissociation adhesive layer 12, the laser dissociation layer 123 can be gasified and dissociated under the irradiation of the dissociation light, and the adhesive material layer 124 can be separated together with the light-emitting diode chip 20. Since the first microstructure 1241 is arranged on the side of the adhesive material layer 124 close to the laser dissociation layer 123, the first microstructure 1241 can be used as a light extraction structure. Therefore, the adhesive material layer 124 on the light-emitting diode chip 20 does not need to be removed, which avoids the operation of removing the residual adhesive on the light-emitting diode chip 20, and further improves the efficiency of the mass transfer of the light-emitting diode chip 20.

[0114] It should be noted that, Figure 15 In the carrier plate shown, an adjusting microstructure arranged between the dissociation adhesive layer 12 and the middle carrier substrate 10 is not shown for simplicity. In actual applications, Figure 15 In the carrier plate shown, an adjusting microstructure can be arranged between the dissociation adhesive layer 12 and the middle carrier substrate 10. The adjusting microstructure can include, but is not limited to, any one of the arc-shaped protrusions, the gratings, and the pre-arranged units in the above embodiments, and the embodiment of the present application does not limit the shape of the first microstructure 1241.

[0115] Optionally, the first microstructure 1241 can be a nano microstructure, so that the first microstructure 1241 can function as a nano micro-lens to achieve a better light extraction effect.

[0116] For example, the first microstructure 1241 can be selected from at least one of a conical microstructure and a prismatic microstructure, and the embodiment of the present application does not limit the shape of the first microstructure 1241.

[0117] In an optional embodiment of the present application, when the first microstructure 1241 is in the shape of a cone, the height of the cone is 0.2-1 um, the diameter of the bottom surface of the cone is 100-500 nm, and the included angle between the side surface and the bottom surface of the cone is 15-60°, so that the first microstructure 1241 achieves a better light extraction effect.

[0118] For example, the thickness of the laser dissociation layer 123 is 1-3 um, so that the laser dissociation layer 123 can achieve a better bonding effect and a higher dissociation efficiency. The thickness of the adhesive material layer 124 is 1-10 um, so that the adhesive material layer 124 can be reliably connected to the light-emitting diode chip 20 and achieve a better light extraction effect.

[0119] In the embodiment of the present application, the refractive index of the adhesive material layer 124 is greater than or equal to 1.5, and the light transmittance of the adhesive material layer 124 is greater than or equal to 97%, so that the adhesive material layer 124 can transmit light and achieve a better light extraction effect.

[0120] Referring to Figures 16 to 19 A carrier plate can be provided Figure 15 A specific processing diagram of the carrier plate is shown. As shown in Figure 16 First, a laser ablation adhesive can be coated on the middle carrier substrate 10. For example, a 1-3 um thick ablation adhesive layer can be coated and then cured. After curing, a second microstructure 1231 can be processed on the surface of the ablation adhesive layer to obtain a sawtooth-shaped laser ablation layer 123. For example, a nanoimprint or photolithography etching process can be used to form the second microstructure 1231 on the surface of the laser ablation layer 123. The specific formation process of the second microstructure 1231 is not limited in the embodiments of the present application.

[0121] As shown in Figure 17 After the second microstructure 1231 is formed on the laser ablation layer 123, an adhesive material can be coated on the laser ablation layer 124 to form an adhesive material layer 124. Since the adhesive material itself has a leveling property, after being coated and cured, the adhesive material layer 124 will automatically be flat and filled on the side close to the laser ablation layer 124, forming a first microstructure 1241 complementary to the second microstructure 1231, and the second microstructure 1241 can be embedded with the first microstructure 1231.

[0122] As shown in Figure 18 After the adhesive material layer 124 is completed, a light emitting diode chip 20 can be bound to the adhesive material layer 124, and the light emitting diode chip 20 can be bound to the middle carrier substrate 20. It should be noted that the adhesive material layer 124 needs to be cured during the binding of the light emitting diode chip 20. The specific curing process can be: pressure and temperature for a certain time (5 min) high temperature curing (230°C).

[0123] In actual application, after the structure shown in Figure 18 is formed, a mask can be used to ash the ablation adhesive layer 12 to obtain the carrier plate shown in Figure 15 .

[0124] As shown in Figure 19 , the carrier plate shown in Figure 15 is used to transfer the light emitting diode chip 20 to the driving chip 40. Under the irradiation of the ablation light, the laser ablation layer 123 can be gasified and ablated, and the adhesive material layer 124 can be detached together with the light emitting diode chip 20. Since the first microstructure 1241 is arranged on the side of the adhesive material layer 124 close to the laser ablation layer 123, the first microstructure 1241 can be used as a light extraction structure, and the adhesive material layer 124 on the light emitting diode chip does not need to be removed. In this way, the operation of removing the residual adhesive on the light emitting diode chip 20 is avoided, and the efficiency of the mass transfer of the light emitting diode chip 20 is further improved.

[0125] In summary, the carrier plate described in the embodiments of the present application can at least have the following advantages:

[0126] In the embodiments of the present application, the dissociation adjustment structure is arranged between the dissociation adhesive layer and the carrier substrate, which can adjust the dissociation precision of the dissociation adhesive layer during the mass transfer of the LED chips. In this way, the position deviation of the LED chips during the falling process can be avoided, the yield and dissociation precision of the LED chips are improved, and thus the yield and mass transfer efficiency of the LED chips during the mass transfer process can be improved.

[0127] The embodiments of the present application also provide a transfer device, which can specifically include: a plurality of LED chips and the aforementioned carrier plate; the plurality of LED chips are connected to the dissociation adhesive layer of the carrier plate, and the transfer device can be used to transfer the plurality of LED chips to the driving chip of a display device, so as to realize the mass transfer of the LED chips.

[0128] It should be noted that the structure of the carrier plate in the embodiments of the present application is the same as that of the carrier plate in the aforementioned embodiments, and thus will not be described herein.

[0129] In the embodiments of the present application, the dissociation adjustment structure is arranged between the dissociation adhesive layer and the carrier substrate, which can adjust the dissociation precision of the dissociation adhesive layer during the mass transfer of the LED chips. In this way, the position deviation of the LED chips during the falling process can be avoided, the yield and dissociation precision of the LED chips are improved, and thus the yield and mass transfer efficiency of the LED chips during the mass transfer process can be improved.

[0130] Referring to Figure 20 , a step flow chart of a processing method of a carrier plate according to an embodiment of the present application is shown, the processing method can be used to process the carrier plate in the aforementioned embodiments, and the processing method can specifically include the following steps:

[0131] Step S11: forming a dissociation adjustment structure on the carrier substrate.

[0132] In the embodiments of the present application, the dissociation adjustment structure can be formed on the intermediate substrate 10 first, so as to be formed between the dissociation adhesive layer 12 and the intermediate substrate 10. In the process of mass transfer of the light emitting diode chip 20, the dissociation adjustment structure can adjust the dissociation accuracy of the dissociation adhesive layer 12. In this way, the position deviation of the light emitting diode chip 20 in the falling process can be avoided, the yield and the dissociation accuracy of the light emitting diode chip 20 can be improved, and thus the yield and the efficiency of mass transfer of the light emitting diode chip 20 in the process of mass transfer can be improved.

[0133] In some optional embodiments of the present application, the dissociation adjustment structure can include a plurality of adjustment microstructures, each of the adjustment microstructures corresponding to one light emitting diode chip 20; wherein the orthographic projection of the adjustment microstructure on the intermediate substrate 10 is a first projection, and the orthographic projection of the light emitting diode chip 20 on the intermediate substrate 10 is a second projection; the first projection of each adjustment microstructure at least partially overlaps with the second projection of the corresponding light emitting diode chip 20, and the area of the first projection is less than or equal to the area of the second projection.

[0134] Specifically, the adjustment microstructure can be a pattern and a microstructure, or a grating, a microlens or a preset structure, etc., which can optimize the interface topography of the dissociation adhesive layer 12. In this way, the dissociation adhesive layer 12 can utilize the automatic exhaust of the periphery in the dissociation process. By setting one adjustment microstructure for each light emitting diode chip 20, the deviation of the light emitting diode chip 20 caused by poor exhaust can be effectively solved.

[0135] For example, the adjustment microstructure can be arranged in the central region of the light emitting diode chip 20, so as to overlap the central regions of the first projection and the second projection; or the microstructure can also be arranged in the edge region of the light emitting diode chip 20, so as to overlap the edge regions of the first projection and the second projection; or the micro-adjustment structure can also be arranged on the entire outer surface region of the light emitting diode chip 20, so as to completely overlap the first projection and the second projection. The present application does not limit the specific position of the micro-adjustment structure relative to the light emitting diode chip 20.

[0136] Step S12: coating a dissociation adhesive on one side of the intermediate substrate on which the dissociation adjustment structure is formed, to form a dissociation adhesive layer, which is configured to be connected with a plurality of light emitting diode chips.

[0137] In the embodiment of the present application, the dissociation adhesive layer 12 of the carrier plate can be configured to connect a plurality of light emitting diode chips 20, and the plurality of light emitting diode chips 20 can be arrayed on the carrier plate. The light emitting diode chips 20 can be light emitting diode chips emitting the same color, or can be light emitting diode chips capable of emitting different colors, and the embodiment of the present application does not limit this.

[0138] Specifically, the dissociation adhesive layer 12 can be a laser dissociation adhesive. By irradiating laser to a partial region of the carrier substrate 10, the dissociation adhesive layer 12 of the corresponding region can be dissociated, so that the light emitting diode chip 20 of the region falls off and is transferred to the driving substrate. Alternatively, the dissociation adhesive layer 12 can also be a thermal dissociation adhesive. At this time, the dissociation adhesive layer 12 of the corresponding region can be dissociated by heating the partial region of the carrier substrate 10, so that the light emitting diode chip 20 of the region falls off and is transferred to the driving substrate.

[0139] In the embodiment of the present application, the carrier plate is provided with a dissociation adjustment structure between the dissociation adhesive layer and the carrier substrate. In the process of mass transfer of the light emitting diode chip, the dissociation adjustment structure can adjust the dissociation accuracy of the dissociation adhesive layer. In this way, the position deviation of the light emitting diode chip during falling can be avoided, the yield and dissociation accuracy of the light emitting diode chip are improved, so that the yield and mass transfer efficiency of the light emitting diode chip in the process of mass transfer can be improved.

[0140] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the exemplary description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0141] Although the embodiments of the present application have been shown and described, those skilled in the art can understand that various changes, modifications, replacements and variations can be made to the embodiments without departing from the principles and spirit of the present application, and the scope of the present application is defined by the claims and their equivalents.

Claims

1. A carrier plate, characterized by, Comprise: The middle carrier substrate, the dissociation adjustment structure and the dissociation adhesive layer are sequentially arranged, the dissociation adjustment structure is configured to adjust the dissociation accuracy of the dissociation adhesive layer, and the dissociation adhesive layer is configured to be connected with a plurality of light emitting diode chips; The dissociation adjustment structure comprises a plurality of adjustment microstructures, and the adjustment microstructure comprises: an arc-shaped protrusion arranged on the side of the dissociation adhesive layer close to the middle carrier substrate, or a grating, or a plurality of pre-arrangement units; The central area of the grating on the middle carrier substrate is at least partially overlapped with the central area of the light emitting diode chip on the middle carrier substrate; the plurality of pre-arrangement units on the middle carrier substrate are at least partially overlapped with the light emitting diode chip on the middle carrier substrate, and the side of the dissociation adhesive layer away from the middle carrier substrate is formed with a plurality of protrusions, one of the protrusions corresponds to one of the pre-arrangement units, and an exhaust channel is formed between adjacent protrusions.

2. The carrier of claim 1, wherein Each of the adjustment microstructures corresponds to one of the light emitting diode chips; wherein, The projection of the adjustment microstructure on the middle carrier substrate is a first projection, and the projection of the light emitting diode chip on the middle carrier substrate is a second projection; The first projection of each of the adjustment microstructures at least partially overlaps with the second projection of the corresponding light emitting diode chip, and the area of the first projection is less than or equal to the area of the second projection.

3. The carrier of claim 1, wherein In the case that the adjustment microstructure comprises the arc-shaped protrusion, the middle carrier substrate is provided with a first arc-shaped groove at a position opposite to the arc-shaped protrusion, the shape of the first arc-shaped groove is matched with the shape of the arc-shaped protrusion, and the arc-shaped protrusion is embedded in the first arc-shaped groove.

4. The carrier of claim 1, where the conditioning microstructure comprises the arc-shaped protrusion, the carrier further comprising: The medium layer is arranged between the middle carrier substrate and the dissociation adhesive layer, and the medium layer is provided with a second arc-shaped groove at a position opposite to the arc-shaped protrusion, the shape of the second arc-shaped groove is matched with the shape of the arc-shaped protrusion, and the arc-shaped protrusion is embedded in the second arc-shaped groove.

5. The carrier plate of claim 4, wherein, The thickness of the medium layer is greater than the depth of the second arc-shaped groove.

6. The carrier plate according to any one of claims 1 to 5, characterized in that In the case that the adjustment microstructure comprises the arc-shaped protrusion, the thickness of the dissociation adhesive layer is greater than the depth of the arc-shaped protrusion.

7. The carrier of claim 1, wherein In the case that the adjustment microstructure comprises the grating, the slit width and the passband width of the grating are both greater than the wavelength of the dissociation light; The height of the grating is 1000-3000A, and the slit width and the passband width of the grating are both 500-1400A.

8. The carrier of claim 1, wherein In the case that the adjustment microstructure comprises the grating, the projection of the grating on the middle carrier substrate is a third projection, the projection of the light emitting diode chip on the middle carrier substrate is a second projection, and the area of the third projection is 5%-10% of the area of the second projection.

9. The carrier of claim 1, wherein In the case that the adjustment microstructure comprises the grating, the carrier plate further comprises a microlens structure arranged on the side of the middle carrier substrate away from the dissociation adhesive layer; The normal projection of the microlens structure on the middle carrier substrate at least partially overlaps with the edge area of the normal projection of the light-emitting diode chip on the middle carrier substrate.

10. The carrier plate of claim 1 or 2 or 7 or 8 or 9, wherein, In the case that the adjusting microstructure comprises the grating, the grating is located on the side of the middle carrier substrate close to the dissociation adhesive layer.

11. The carrier of claim 1, wherein In the case that the adjusting microstructure comprises the pre-arrangement unit, the pre-arrangement unit is made of transparent material.

12. The carrier plate of claim 11, wherein, The height of the pre-arrangement unit is 15000-20000A, and the width of the pre-arrangement unit in any direction is greater than or equal to 2.5um.

13. The carrier of claim 1 or 2 or 11 or 12, wherein, In the case that the adjusting microstructure comprises the pre-arrangement unit, a plurality of pre-arrangement units are arranged corresponding to each light-emitting diode chip, and there is a certain distance between adjacent pre-arrangement units.

14. A carrier panel, characterized by Comprise: A middle carrier substrate, a dissociation adjusting structure and a dissociation adhesive layer arranged in sequence, the dissociation adjusting structure is configured to adjust the dissociation accuracy of the dissociation adhesive layer, and the dissociation adhesive layer is configured to be connected with a plurality of light-emitting diode chips; The dissociation adhesive layer comprises a laser dissociation layer and an adhesive material layer, the laser dissociation layer is located on the side of the middle carrier substrate close to the light-emitting diode chip, and the adhesive material layer is located between the laser dissociation layer and the light-emitting diode chip; wherein, The side of the adhesive material layer close to the laser dissociation layer is provided with a first microstructure, and the side of the laser dissociation layer close to the adhesive material layer is provided with a second microstructure, the shape of the second microstructure is complementary to the first microstructure, and the second microstructure and the first microstructure are embedded with each other.

15. The carrier plate of claim 14, wherein, The thickness of the laser dissociation layer is 1-3um, and the thickness of the adhesive material layer is 1-10um.

16. The carrier of claim 14, wherein, The first microstructure is a nano microstructure, and the first microstructure is selected from at least one of a conical microstructure and a prismatic microstructure.

17. The carrier of claim 14, wherein, The first microstructure is a cone, the height of the cone is 0.2-1um, the diameter of the bottom surface of the cone is 100-500nm, and the included angle between the side surface of the cone and the bottom surface is 15-60°.

18. The carrier panel of any of claims 14 to 17, wherein, The refractive index of the adhesive material layer is greater than or equal to 1.5, and the light transmittance of the adhesive material layer is greater than or equal to 97%.

19. A transfer device, characterized by The transfer device comprises a plurality of light-emitting diode chips and the carrier plate of any one of claims 1 to 18, and the plurality of light-emitting diode chips are connected to the dissociation adhesive layer of the carrier plate.

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