A method for preparing perovskite single-crystal microwire arrays by a melting method

Abstract

This invention provides a method for preparing perovskite single-crystal micron-shaped wire arrays using a melt method. Perovskite powder is added to the gap between a silicon pillar template and a quartz substrate, forming a sandwich structure. This sandwich structure is placed on a heating device, and the temperature is increased. When the temperature exceeds the melting point of perovskite, the melt flows along the top of the silicon pillar until it covers the entire silicon pillar template. The temperature is then slowly lowered until it falls below the solidification point of perovskite, resulting in a regularly arranged perovskite micron-shaped wire array on the substrate. Compared to traditional liquid-phase methods for preparing perovskite arrays, this invention ensures crystal quality, avoids the harm to health and the environment caused by organic solvents, and enables the array preparation of perovskite that is insoluble in organic solvents. Furthermore, it provides a new approach for the array preparation of other perovskites and their application in optoelectronic devices.

Description

Technical Field

[0001] This invention relates to the field of chemical technology, specifically to a method for preparing perovskite single-crystal micron-line arrays by a melting process. Background Technology

[0002] In recent years, perovskite materials have been widely used in photodetectors, light-emitting diodes, solar cells and other fields due to their large absorption coefficient, adjustable band gap, large carrier concentration and long carrier diffusion distance, and have achieved breakthrough progress.

[0003] However, current perovskite device fabrication is based on spin-coating thin-film devices, and numerous grain boundaries and surface defects limit the improvement of optoelectronic device performance. Regularly arranged, highly single-crystalline perovskite microstructures with strict crystal orientation are an indispensable technology for manufacturing integrated electronics and optoelectronic components.

[0004] In recent years, various solution processing methods have been used to achieve the array-based fabrication of perovskite materials, such as inkjet printing, microimprinting, dip pen printing, and shear coating. These methods achieve localized growth of perovskites by confining and segmenting liquid films, enabling precise control over the position and morphology of the perovskites. However, the coffee ring effect leads to long-range disordered assembly of micro / nano arrays, which in turn sacrifices the performance of optoelectronic devices. Furthermore, the solubility of perovskites varies greatly in different solvents, dissolving only in polar solvents, which is environmentally harmful.

[0005] The traditional liquid-phase methods for preparing perovskite single-crystal arrays have significant limitations. In particular, liquid-phase methods cannot process perovskite materials with low solubility. Therefore, there is a need for a new, universal, simple, and efficient method for preparing perovskite micro single-crystal arrays. Summary of the Invention

[0006] This invention addresses the problem of fabricating perovskite micro-crystal arrays by providing a melt-processing method for preparing perovskite single-crystal micron-line arrays. Perovskite powder is added to the gap between a designed silicon pillar template and a quartz substrate, forming a sandwich structure. This sandwich structure is placed on a heating device, and the temperature is increased. When the temperature exceeds the melting point of perovskite, the melt flows along the top of the silicon pillar until it covers the entire silicon pillar template. The temperature is then slowly lowered until it falls below the solidification point of perovskite, resulting in a regularly arranged perovskite micron-line single-crystal array on the substrate. Compared to traditional liquid-phase methods for preparing perovskite arrays, this method ensures crystal quality, avoids the harm to health and the environment caused by organic solvents, and enables the array-based preparation of perovskite that is insoluble in organic solvents. This preparation method provides a new approach for the array-based preparation of other perovskites and their application in optoelectronic devices.

[0007] This invention provides a method for preparing perovskite single-crystal micron-line arrays by a melting method, comprising the following steps:

[0008] S1. Perovskite powder is added into the gap between the silicon pillar template and the substrate to obtain a sandwich structure composed of silicon pillar template, perovskite powder and substrate.

[0009] S2. Heat the sandwich structure until the temperature reaches the melting point of the perovskite powder to obtain a melt. Hold the melt for 1 to 5 minutes. The melt flows along the top of the silicon pillar until it covers the entire silicon pillar template.

[0010] S3. Slowly cool down. When the temperature is below the solidification point of the perovskite powder, keep it at that temperature and then quickly cool it down to room temperature. Disassemble the sandwich system to obtain a regularly arranged perovskite single crystal micron array on the substrate.

[0011] The method for preparing perovskite single-crystal micron-line arrays by melting method according to the present invention, as a preferred embodiment, in step S1, the melting point temperature of the perovskite powder is lower than the decomposition temperature, the amount of perovskite powder added is 5-25 mg, and the perovskite powder includes any one of the following: (S-NPB)2PbBr4 perovskite powder, (R-NPB)2PbBr4 perovskite powder, [TPrA][Mn(dca)3] perovskite powder, and [TPrA][Co(dca)3] perovskite powder.

[0012] In a preferred embodiment of the method for preparing perovskite single-crystal micron-line arrays by melting method described in this invention, in step S1, the silicon pillar template includes a silicon pillar array and a platform disposed on one side of the silicon pillar array. The silicon pillar array includes at least two silicon pillars, the top of the silicon pillars is hydrophilic and the sidewalls are hydrophobic, the platform is connected to one end of each silicon pillar, and the substrate is disposed on the upper part of the silicon pillars and the platform.

[0013] Silicon pillar templates are prepared by photolithography, and the preparation methods include spin coating, drying, exposure, development, rinsing and deep ion etching.

[0014] In a preferred embodiment of the method for preparing perovskite single-crystal micron-line arrays by melting, the silicon pillar template is subjected to an asymmetric wettability treatment to make the silicon pillar tip hydrophilic and the sidewall hydrophobic.

[0015] The method for preparing perovskite single-crystal micron-line arrays by melting method according to the present invention, as a preferred embodiment, is a patterned array of silicon pillars, and the shape of the silicon pillars is any one of the following: straight, curved, triangular, circular, square, and Y-shaped;

[0016] Asymmetric wetting treatment was performed using fluorosilanes.

[0017] In the method for preparing perovskite single-crystal micron-line arrays by melting according to the present invention, as a preferred embodiment, the width of the silicon pillars is 1–100 μm, and the spacing between two adjacent silicon pillars is 5–100 μm.

[0018] In the preferred embodiment of the method for preparing perovskite single-crystal micron-line arrays by melting method described in this invention, in step S1, the substrate is a quartz sheet, and one end of the quartz sheet is provided with a through hole for adding perovskite powder.

[0019] In the method for preparing perovskite single-crystal micron-line arrays by melting method according to the present invention, as a preferred embodiment, in step S2, the maximum heating temperature is lower than the decomposition temperature of the perovskite powder;

[0020] In step S3, the cooling rate for slow cooling is 1-5℃ / min, the holding time is 1-10min, and the cooling rate for rapid cooling is greater than that for slow cooling.

[0021] The present invention discloses a method for preparing perovskite single-crystal micron-line arrays by a melting method. In a preferred embodiment, the silicon pillar template can be reused, and the shape of the perovskite single-crystal micron-line array is the same as that of the silicon pillar array. The perovskite single-crystal micron-line array is used for the preparation of SHG.

[0022] The present invention discloses a method for preparing perovskite single-crystal micron-line arrays by a melting method. As a preferred embodiment, the perovskite single-crystal micron-line array is used to prepare a one-dimensional array optoelectronic device, which includes a gold electrode, a substrate, and a perovskite single-crystal micron-line array.

[0023] This invention mainly solves the following two technical problems:

[0024] (1) Fabrication of long-range ordered perovskite microarrays. Although traditional solution processing methods can precisely control the position and morphology of perovskites, the coffee ring effect leads to long-range disordered assembly of micro- and nano-arrays, which in turn sacrifices the performance of optoelectronic devices.

[0025] (2) Fabrication of liquid-phase unprocessable perovskite arrays. For perovskite materials with low solubility, liquid-phase methods are not feasible. Large-area perovskite single-crystal micron-line arrays can be achieved through a melting method.

[0026] The present invention has the following advantages:

[0027] This invention involves adding perovskite powder into the gap between a silicon pillar template and a quartz substrate, forming a sandwich structure. This sandwich structure is placed on a heating device, and the temperature is increased. When the temperature exceeds the melting point of perovskite, the melt flows along the top of the silicon pillar until it covers the entire silicon pillar template. The temperature is then slowly lowered until it falls below the solidification point of perovskite, resulting in a regularly arranged array of perovskite micron-sized single crystals on the substrate. Compared to traditional liquid-phase methods for preparing perovskite arrays, this method ensures crystal quality, avoids the harm to health and the environment caused by organic solvents, and enables the array-based preparation of perovskite that is insoluble in organic solvents. This preparation method provides a new approach for the array-based preparation of other perovskites and their application in optoelectronic devices. Attached Figure Description

[0028] Figure 1 A schematic diagram of a sandwich structure for a method of preparing perovskite single-crystal micron-line arrays by melting;

[0029] Figure 2 Scanning electron microscope image of a silicon pillar template structure for a method of preparing perovskite single-crystal micron-line arrays by a melting process;

[0030] Figure 3 This study presents an in-situ observation of the fluid motion process of perovskite after melting during the preparation of a perovskite single-crystal micron-line array via a melt-process method.

[0031] Figure 4 An optical microscope image of a perovskite micro-crystal array prepared by a melting method for preparing perovskite single-crystal micro-linear arrays;

[0032] Figure 5 Optical microscope image of a large-area perovskite micro-crystal array prepared by a melting method for preparing perovskite single-crystal micro-linear arrays;

[0033] Figure 6 shows the chemical structure diagram of some perovskites in an embodiment of a method for preparing perovskite single-crystal micron-line arrays by a melting method;

[0034] Figure 7 A schematic diagram of a perovskite single-crystal array prepared by a melting method for preparing perovskite single-crystal micron-line arrays for use in a circularly polarized light detector.

[0035] Figure 8 A perovskite single-crystal array prepared by a melting method is used to generate an intensity map for second harmonic generation. Detailed Implementation

[0036] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0037] Example 1

[0038] like Figure 1 As shown, a method for preparing perovskite single-crystal micron-line arrays by a melting method includes the following steps:

[0039] S1. Perovskite powder is added into the gap between the silicon pillar template and the substrate to obtain a sandwich structure consisting of the silicon pillar template, perovskite powder, and substrate; the silicon pillar template is as follows: Figure 2 As shown;

[0040] The melting point of the perovskite powder is lower than its decomposition temperature. The amount of perovskite powder added is 5-25 mg. The perovskite powder includes any one of the following: (S-NPB)2PbBr4 perovskite powder, (R-NPB)2PbBr4 perovskite powder, [TPrA][Mn(dca)3] perovskite powder, and [TPrA][Co(dca)3] perovskite powder.

[0041] The silicon pillar template includes a silicon pillar array and a platform disposed on one side of the silicon pillar array. The silicon pillar array includes at least two silicon pillars. The top of the silicon pillar is hydrophilic and the sidewall is hydrophobic. The platform is connected to one end of each silicon pillar. The substrate is disposed on the upper part of the silicon pillars and the platform.

[0042] Silicon pillar templates are prepared by photolithography, and the preparation methods include spin coating, drying, exposure, development, rinsing and deep ion etching;

[0043] The silicon pillar template is made hydrophilic at the top and hydrophobic at the sidewalls through asymmetric wetting treatment.

[0044] The silicon pillar array is a patterned array, and the shape of the silicon pillars can be any of the following: straight, curved, triangular, circular, square, and Y-shaped;

[0045] Asymmetric wetting treatment using fluorosilanes;

[0046] The width of the silicon pillars is 1–100 μm, and the spacing between two adjacent silicon pillars is 5–100 μm;

[0047] The substrate is a quartz sheet, and one end of the quartz sheet is provided with a through hole for adding perovskite powder;

[0048] S2. Heat the sandwich structure until the temperature reaches the melting point of the perovskite powder to obtain a melt. Hold the melt at this temperature for 1–5 minutes. The melt flows along the top of the silicon pillar until it covers the entire silicon pillar template. Figure 3 As shown; the highest temperature of the heat is less than the decomposition temperature of the perovskite powder.

[0049] S3. Slowly cool down, and after the temperature drops below the solidification point of the perovskite powder, hold it at that temperature and then rapidly cool it to room temperature. Disassemble the sandwich system to obtain a regularly arranged perovskite single-crystal micron-line array on the substrate, such as... Figures 4-5 As shown;

[0050] The cooling rate for slow cooling is 1–5 °C / min, and the holding time is 1–10 min. The cooling rate for rapid cooling is greater than that for slow cooling.

[0051] The silicon pillar template is reusable, and the shape of the perovskite single-crystal micron-line array is the same as that of the silicon pillar array. The perovskite single-crystal micron-line array is used for the preparation of SHG.

[0052] Perovskite single-crystal micron-line arrays are used to fabricate one-dimensional array optoelectronic devices, which include gold electrodes, a substrate, and a perovskite single-crystal micron-line array.

[0053] Example 2

[0054] like Figure 1 As shown, a method for preparing perovskite single-crystal micron-line arrays by a melting method includes the following steps:

[0055] 1) Fabrication of patterned micropillar structure silicon wafers: Using photolithography, silicon wafer substrates with micropillar structures are obtained, such as... Figure 2 As shown, the shape of the micropillars depends on the pattern of the mask.

[0056] 2) Asymmetric wettability treatment: Using fluorosilane, a silicon pillar template array with a hydrophilic top and hydrophobic sidewalls is prepared.

[0057] 3) Sonicate the quartz substrate for ten minutes each with acetone, ethanol, and isopropanol solutions, clean it, and then dry it with nitrogen.

[0058] 4) such as Figure 1 As shown, a quartz sheet is placed over the silicon pillar template, aligned with the template below, to facilitate the addition of perovskite powder. This invention uses a 4μm wide silicon pillar template with a 20μm spacing between adjacent pillars as a representative example; other sizes of silicon pillars are not described further.

[0059] 5) Add 10 mg of (S-NPB)2PbBr4 perovskite powder into the small hole using a small key.

[0060] 6) Heat the entire system from 3) above to 175°C, but note that it should be below 205°C. The melting point of (S-NPB)2PbBr4 is 175°C, and its decomposition temperature is 205°C.

[0061] 7) Hold the system from step 4) above at 175°C for 1-5 minutes to allow the fluid to fully flow and cover the entire surface of the silicon pillar. The fluid movement process is as follows: Figure 1, 3 As shown.

[0062] 8) Slowly cool to 130℃ at a rate of 1℃ / min. After the fluid has completely crystallized, hold for 5 minutes, then rapidly cool to room temperature. Disassemble the sandwich system; the single-crystal array has been successfully fabricated on the quartz substrate. The silicon pillar template can be reused. The entire heating process is controlled by a programmable temperature controller with a temperature control accuracy of ±1 degree.

[0063] 9) Using a 365nm LED as the light source, right-handed circularly polarized (RCP), left-handed circularly polarized (LCP), and unpolarized light were generated through a combination of half-wave and quarter-wave plates. A clear circularly polarized light response could be observed, such as... Figure 7 As shown, the prepared micron-line single-crystal array is of good quality and can be used for the detection of circularly polarized light. The second harmonic characteristics of the perovskite crystal were detected using a femtosecond laser, such as... Figure 8 As shown, by changing the wavelength of the excitation laser, a signal with half the wavelength was generated, demonstrating its good SHG properties.

[0064] In this embodiment, by Figure 2 The silicon pillar template shown provides a confined space for the directional flow of the molten perovskite fluid. After cooling, the fluid solidifies into a perovskite solid (single crystal), thus obtaining a well-arranged array of perovskite micro single crystals, such as... Figure 4 and 5 As shown. Furthermore, the micron-wires prepared by this invention exhibit good crystal quality and controllable size, allowing for the fabrication of perovskite single-crystal arrays of corresponding sizes by designing appropriate template dimensions.

[0065] Example 3

[0066] like Figure 1 As shown, a method for preparing perovskite single-crystal micron-line arrays by a melting method includes the following steps:

[0067] 1) Fabrication of patterned micropillar structure silicon wafers: Using photolithography, silicon wafer substrates with micropillar structures are obtained, such as... Figure 2 As shown.

[0068] 2) Asymmetric wettability treatment: Using fluorosilane, a silicon pillar template array with a hydrophilic top and hydrophobic sidewalls is prepared.

[0069] 3) Sonicate the quartz substrate for ten minutes each with acetone, ethanol, and isopropanol solutions, clean it, and then dry it with nitrogen.

[0070] 4) Place a quartz sheet over the silicon pillar template, aligning the quartz sheet with the silicon pillar template below to facilitate the addition of perovskite powder. This invention uses a silicon pillar template with a width of 4μm and a spacing of 20μm between adjacent pillars as a representative example; other specifications and sizes of silicon pillars will not be described further.

[0071] 5) Add 10 mg of (R-NPB)2PbBr4 perovskite powder into the small hole using a small key.

[0072] 6) Heat the entire system from 3) above to 175°C, but note that it should be below 205°C. The melting point of (R-NPB)2PbBr4 is 175°C, and its decomposition temperature is 205°C.

[0073] 7) Hold the system from step 4) above at 175°C for 1-5 minutes to allow the fluid to fully flow and cover the entire surface of the silicon pillar. The fluid movement process is as follows: Figure 1 , 3 As shown.

[0074] 8) Slowly cool to 130℃ at a rate of 1℃ / min. After the fluid has completely crystallized, hold for 5 minutes, then rapidly cool to room temperature. Disassemble the sandwich system; the single-crystal array has been successfully fabricated on the quartz substrate. The silicon pillar template can be reused. The entire heating process is controlled by a programmable temperature controller with a temperature control accuracy of ±1 degree.

[0075] Example 4

[0076] like Figure 1 As shown, a method for preparing perovskite single-crystal micron-line arrays by a melting method includes the following steps:

[0077] 1) Fabrication of patterned micropillar structure silicon wafers: Using photolithography, silicon wafer substrates with micropillar structures are obtained, such as... Figure 2 As shown, the shape of the micropillars depends on the pattern of the mask.

[0078] 2) Asymmetric wettability treatment: Using fluorosilane, a silicon pillar template array with a hydrophilic top and hydrophobic sidewalls is prepared.

[0079] 3) Sonicate the quartz substrate for ten minutes each with acetone, ethanol, and isopropanol solutions, clean it, and then dry it with nitrogen.

[0080] 4) Place a quartz sheet over the silicon pillar template, aligning the quartz sheet with the silicon pillar template below to facilitate the addition of perovskite powder. This invention uses a silicon pillar template with a width of 4μm and a spacing of 20μm between adjacent pillars as a representative example; other specifications and sizes of silicon pillars will not be described further.

[0081] 5) Add 10 mg of [TPrA][Mn(dca)3] perovskite powder into the small hole using a small key.

[0082] 6) Heat the entire system from 3) above to 271°C, but note that it should be below 281°C. The melting point of (S-α-PEA)2PbI4 is 271°C, and its decomposition temperature is 281°C.

[0083] 7) Hold the system from step 4) above at 271°C for 1-5 minutes to allow the fluid to fully flow and cover the entire surface of the silicon pillar. The fluid movement process is as follows: Figure 1 , 3 As shown.

[0084] 8) Slowly cool to 200℃ at a rate of 1℃ / min. After the fluid has completely crystallized, hold for 5 minutes, then rapidly cool to room temperature. Disassemble the sandwich system; the single-crystal array has been successfully fabricated on the quartz substrate. The silicon pillar template can be reused. The entire heating process is controlled by a programmable temperature controller with a temperature control accuracy of ±1 degree.

[0085] In this embodiment, by Figure 2 The silicon pillar template shown provides a confined space for the directional flow of the molten perovskite fluid. After cooling, the fluid will solidify into a perovskite solid (single crystal), thus obtaining a neatly arranged array of perovskite micro single crystals.

[0086] Example 5

[0087] like Figure 1 As shown, a method for preparing perovskite single-crystal micron-line arrays by a melting method includes the following steps:

[0088] 1) Fabrication of patterned micropillar structure silicon wafers: Using photolithography, silicon wafer substrates with micropillar structures are obtained, such as... Figure 2 As shown.

[0089] 2) Asymmetric wettability treatment: Using fluorosilane, a silicon pillar template array with a hydrophilic top and hydrophobic sidewalls is prepared.

[0090] 3) Sonicate the quartz substrate for ten minutes each with acetone, ethanol, and isopropanol solutions, clean it, and then dry it with nitrogen.

[0091] 4) Place a quartz sheet over the silicon pillar template, aligning the quartz sheet with the silicon pillar template below to facilitate the addition of perovskite powder. This invention uses a silicon pillar template with a width of 4μm and a spacing of 20μm between adjacent pillars as a representative example; other specifications and sizes of silicon pillars will not be described further.

[0092] 5) Add 10 mg of [TPrA][Co(dca)3] perovskite powder into the small hole using a small key.

[0093] 6) Heat the entire system from 3) above to 230°C, but note that it should be below 260°C. The melting point of (S-α-PEA)2PbI4 is 230°C, and its decomposition temperature is 267°C.

[0094] 7) Hold the system from step 4) above at 230°C for 1-5 minutes to allow the fluid to fully flow and cover the entire surface of the silicon pillar. The fluid movement process is as follows: Figure 1 ,3 As shown.

[0095] 8) Slowly cool to 200℃ at a rate of 1℃ / min. After the fluid has completely crystallized, hold for 5 minutes, then rapidly cool to room temperature. Disassemble the sandwich system; the single-crystal array has been successfully fabricated on the quartz substrate. The silicon pillar template can be reused. The entire heating process is controlled by a programmable temperature controller with a temperature control accuracy of ±1 degree.

[0096] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A method for preparing perovskite single-crystal micron-line arrays by a melting method, characterized in that: Includes the following steps: S1. Cover the silicon pillar template with the substrate and align it. Use a small key to add perovskite powder into the through-holes on the substrate to obtain a sandwich structure composed of the silicon pillar template, perovskite powder and the substrate. The silicon pillar template includes a silicon pillar array and a platform disposed on one side of the silicon pillar array. The silicon pillar array includes at least two silicon pillars. The top of the silicon pillar is hydrophilic and the sidewall is hydrophobic. The platform is connected to one end of each silicon pillar. The substrate is disposed on the upper part of the silicon pillars and the platform. One end of the substrate is provided with a through hole for adding perovskite powder. After the substrate covers the silicon pillar template, the through hole is located above the platform. S2. The sandwich structure is heated to a maximum temperature lower than the decomposition temperature of the perovskite powder. When the temperature reaches the melting point of the perovskite powder, a melt is obtained. The melt is held for 1 to 5 minutes. The melt flows along the top of the silicon pillar until it covers the entire silicon pillar template. The silicon pillar template provides a confined space for the molten perovskite fluid to flow in a directional manner. S3. Slowly cool down, and when the temperature is below the solidification point of the perovskite powder, keep it at the temperature and then quickly cool it down to room temperature. Disassemble the sandwich structure to obtain a regularly arranged perovskite single crystal micron array on the substrate. The silicon pillar template can be reused. The shape of the perovskite single crystal micron array is the same as the shape of the silicon pillar array.

2. The method for preparing perovskite single-crystal micron-line arrays by melting according to claim 1, characterized in that: In step S1, the melting point of the perovskite powder is lower than its decomposition temperature, and the amount of perovskite powder added is 5~25mg. The perovskite powder includes any one of the following: S -NPB)2PbBr4 perovskite powder, ( R -NPB)2PbBr4 perovskite powder, [TPrA][Mn(dca)3] perovskite powder and [TPrA][Co(dca)3] perovskite powder.

3. The method for preparing perovskite single-crystal micron-line arrays by melting according to claim 1, characterized in that: In step S1, the silicon pillar template is prepared by photolithography, and the preparation method includes spin coating, drying, exposure, development, rinsing and deep ion etching.

4. The method for preparing perovskite single-crystal micron-line arrays by melting according to claim 3, characterized in that: The silicon pillar template is made hydrophilic at the top and hydrophobic at the sidewalls through asymmetric wetting treatment.

5. The method for preparing perovskite single-crystal micron-line arrays by melting according to claim 4, characterized in that: The silicon pillar array is a patterned array, and the shape of the silicon pillars can be any of the following: straight, curved, triangular, circular, square, and Y-shaped; Asymmetric wetting treatment was performed using fluorosilanes.

6. The method for preparing perovskite single-crystal micron-line arrays by melting according to claim 4, characterized in that: The width of the silicon pillar is 1~100μm, and the interval between two adjacent silicon pillars is 5~100μm.

7. The method for preparing perovskite single-crystal micron-line arrays by melting according to claim 1, characterized in that: In step S1, the substrate is a quartz sheet.

8. The method for preparing perovskite single-crystal micron-line arrays by melting according to claim 1, characterized in that: In step S3, the cooling rate for slow cooling is 1~5℃ / min, the holding time is 1~10min, and the cooling rate for rapid cooling is greater than that for slow cooling.

9. The method for preparing perovskite single-crystal micron-line arrays by melting according to claim 1, characterized in that: The perovskite single-crystal micron-line array is used for the fabrication of SHG.

10. The method for preparing perovskite single-crystal micron-line arrays by melting according to claim 1, characterized in that: The perovskite single-crystal micron-line array is used to fabricate a one-dimensional array optoelectronic device, which includes a gold electrode, the substrate, and the perovskite single-crystal micron-line array.

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