Ultrafast laser processing methods, systems, devices and applications

Abstract

The present invention provides an ultrafast laser processing method, system, device and application, comprising: orienting a crystal to be processed to determine a cleavage plane of the crystal to be processed; obtaining an intersection line between the cleavage plane and a processing plane of the crystal to be processed by crystal analysis technology, and using the intersection line as a crystal plane trace of the cleavage plane; scanning the crystal to be processed along a set direction with an ultrafast laser source to control cracks and edge chipping on the processing plane of the crystal to be processed; the set direction is a crystal orientation at 0-90 degrees to the crystal plane trace; the method of the present invention, starting from the material properties of single-crystal diamond, performs directional analysis on the diamond material, and utilizes a certain angle between the laser processing direction and the crystal plane trace of the cleavage plane to generate controllable cracks and edge chipping on the processed groove shape, thereby improving the performance and service life of the crystal material component.

Description

Technical Field

[0001] The present invention relates to the field of single crystal diamond processing, and in particular to an ultrafast laser processing method, system, device and application. Background Art

[0002] Hard and brittle single crystal materials, such as single crystal diamond, sapphire, single crystal silicon, and single crystal silicon carbide, are characterized by anisotropy and cleavage planes. They are generally formed by crystals bonded together by saturated and directional covalent bonds, resulting in extremely high hardness and wear resistance. They are widely used in today's society, for example: single crystal diamond materials are widely used in precision machining, semiconductor devices, optics, acoustics and other fields;

[0003] However, hard and brittle materials are difficult to machine. Traditional contact machining methods suffer from low machining efficiency and poor surface quality. Ultrafast laser machining technology (lasers with pulse widths in the picosecond or femtosecond range) offers advantages such as high flexibility, extremely high instantaneous peak power density, small heat-affected zone, and high surface quality. It shows great potential in high-quality and high-precision machining of single-crystal diamond materials.

[0004] When existing ultrafast lasers process hard and brittle materials, such as single crystal diamond, the time for the laser to interact with the material is very short, less than or close to the thermal diffusion time (10 -12 s), so it is difficult for the material to transfer heat to the surrounding non-radiated areas, causing local thermal stress in the radiation area, causing cracking on the processed surface, and often causing micro cracks and edge collapse when processing grooves, which greatly affects the performance and service life of diamond devices;

[0005] To address cracks and chipping during diamond machining, existing control methods include: adding a modulation element to the laser light path to modulate the original symmetrical Gaussian distribution of the laser spot into an elliptical spot, causing cracks to occur along the long axis of the elliptical spot. By changing the laser spot, the shape of the crack is controlled.

[0006] Therefore, existing technologies rely on optical modulation elements, which are generally expensive. Furthermore, existing technologies focus on improving optical systems, and do not consider the material properties of single-crystal diamond to propose methods for controlling cracks generated by the commonly used Gaussian distribution laser processing of single-crystal diamond.

[0007] An ultrafast laser processing method that can control microcracks urgently needs to be developed. Summary of the Invention

[0008] In order to overcome the deficiencies of the prior art, the present invention provides an ultrafast laser processing method, system, device and application for solving at least one of the aforementioned technical problems.

[0009] Specifically, the technical solution is as follows:

[0010] An ultrafast laser processing method, comprising:

[0011] orienting the crystal to be processed to determine the cleavage plane of the crystal to be processed;

[0012] Obtaining an intersection line between the cleavage plane and the surface to be processed, and using the intersection line as a crystal plane trace of the cleavage plane;

[0013] Moving the ultrafast laser source along a set direction to scan the crystal to be processed, so that cracks and edge collapse on the processing surface of the crystal to be processed can be controlled;

[0014] The set direction is: a crystal direction that is 0-90° with respect to the crystal plane trace.

[0015] The crystal direction forms an angle of 45° with the crystal plane trace, and the scanning processing direction of the ultrafast laser source is parallel to the crystal direction, so cross-distributed cracks and chipped edges with a sharp angle of 30°-60° are obtained on the processing surface of the crystal to be processed.

[0016] The crystal direction and the crystal plane trace present an angle of 0° or 90°, and the scanning processing direction of the ultrafast laser source is parallel to the crystal direction, so that non-intersecting horizontal and vertical cracks and 80°-100° edge collapse are obtained on the processing surface of the crystal to be processed.

[0017] The ultrafast laser processing method further includes:

[0018] In the process of “moving the ultrafast laser source along a set direction to scan and process the crystal to be processed”: when the laser repetition frequency is a preset value, the step of adjusting the scanning speed of the ultrafast laser source includes:

[0019] Increase the scanning speed of the ultrafast laser source; or decrease the scanning speed of the ultrafast laser source.

[0020] An ultrafast laser processing system, comprising:

[0021] Ultrafast lasers;

[0022] an optical component, disposed at an output end of the ultrafast laser, for optically processing the ultrafast laser light emitted by the ultrafast laser to obtain processed ultrafast laser light;

[0023] a scanning galvanometer, disposed at the output end of the optical component, for receiving the processed ultrafast laser and outputting ultrafast laser for scanning processing;

[0024] a control unit connected to the scanning galvanometer, for controlling the moving direction and speed of the ultrafast laser using the ultrafast laser processing method described above;

[0025] The control unit is connected to the ultrafast laser and is used to adjust the energy density and repetition frequency of the ultrafast laser used for scanning processing.

[0026] The optical component comprises:

[0027] A first reflector mechanism is provided at the output end of the ultrafast laser;

[0028] a beam expander, disposed at an output end of the first reflector mechanism, for receiving the laser beam output from the first reflector mechanism and expanding the beam;

[0029] a second reflector mechanism, disposed at an output end of the beam expander, for receiving the expanded laser beam output from the beam expander;

[0030] The second reflector mechanism is arranged at the input end of the scanning galvanometer, and is used to provide the expanded laser beam to the scanning galvanometer.

[0031] The ultrafast laser processing method is applied in processing hard and brittle single crystal materials such as single crystal diamond, sapphire, single crystal silicon, and single crystal silicon carbide.

[0032] The present invention has at least the following beneficial effects:

[0033] The method of the present invention determines the cleavage plane of the crystal to be processed by orienting it; obtains the intersection line of the cleavage plane and the surface to be processed by crystal analysis technology, such as EBSD technology, and uses the intersection line as the crystal plane trace of the cleavage plane; finally, moves an ultrafast laser source along a set direction to make cracks and chipping on the processing surface of the crystal to be processed controllable; the set direction is a crystal orientation that is 0-90 degrees with the crystal plane trace; the method of the present invention starts from the material properties of single-crystal diamond, conducts directional analysis of the diamond material, and uses the laser scanning processing direction to form an angle of 0-90 degrees with the crystal plane trace of the cleavage plane, so as to generate controllable cracks and chipping at the bottom of the processed groove, that is, the processing surface, thereby improving the performance and service life of the crystal component; at the same time, the method of the present invention does not improve the optical system in the processing system, such as adding an optical modulation element, etc., which reduces the processing cost and makes the method of the present invention more adaptable. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0035] Figure 1 A flow chart of the method of the present invention;

[0036] Figure 2 A schematic diagram of scanning the surface of a single crystal diamond along different crystal directions in the present invention;

[0037] Figure 3 Schematic diagram of edge chipping and cracks in a groove after scanning in a crystal direction with an angle of 45° to the crystal plane trace of the cleavage plane;

[0038] Figure 4 Schematic diagram of edge collapse and cracks in a groove after scanning with a crystal direction at an angle of 0° or 90° to the crystal plane trace of the cleavage plane;

[0039] Figure 5 for Figure 3 The schematic diagram of the processing surface when the chipping edge and the crack are at a 45° angle along the crystal plane trace with the cleavage plane and the scanning speed of the ultrafast laser source is increased;

[0040] Figure 6 for Figure 4 Schematic diagram of the processing surface when the chipping edge and crack are increased at an angle of 0° or 90° to the crystal plane trace line by increasing the scanning speed of the ultrafast laser source;

[0041] Figure 7 for Figure 3 The schematic diagram of the working surface with chipped edges and cracks after reducing the scanning speed is shown;

[0042] Figure 8 for Figure 4 The schematic diagram of the working surface with chipped edges and cracks after reducing the scanning speed is shown;

[0043] Figure 9 This is a system principle diagram of the ultrafast laser processing system of the present invention;

[0044] Figure 10 Schematic diagram of edge chipping and cracks according to the present invention;

[0045] Among them, 100. Ultrafast laser; 200. Optical component; 300. Scanning galvanometer; 400. Control unit; 201. First reflector mechanism; 202. Beam expander; 203. Second reflector mechanism;

[0046] in, Figure 2 Middle: A. Surface of the single crystal diamond to be processed; B. Crystalline trace of the cleavage plane; C. Crystalline orientation at 0° or 90° to the crystalline trace of the cleavage plane; D. Crystalline orientation at 45° to the crystalline trace of the cleavage plane;

[0047] in, Figure 9 The E in the figure is the crystal to be processed; the crystal directions C and D can also be used as the scanning processing directions of the ultrafast laser source;

[0048] in, Figure 10 The R in the figure represents a 90° rectangular chipping edge; the S represents a 45° sharp-angle chipping edge; and the M represents a processing groove. DETAILED DESCRIPTION

[0049] Those skilled in the art will appreciate that the modules in the devices in the implementation scenario can be distributed in the devices of the implementation scenario according to the implementation scenario description, or can be modified accordingly and located in one or more devices different from the implementation scenario. The modules in the above implementation scenario can be combined into one module or further split into multiple submodules.

[0050] The key feature of EBSD technology is its ability to perform submicron-level diffraction (producing crystallographic data) while retaining the conventional characteristics of a scanning electron microscope. EBSD has revolutionized previous approaches to texture analysis and established a new scientific field, termed "microtexture," which combines microstructural and crystallographic analysis. Closely related to "microtexture" are the applications of EBSD for phase analysis, obtaining interface (grain boundary) parameters, and measuring plastic strain. Currently, EBSD technology enables fully automated acquisition of micro-area orientation information, simplifies sample preparation, achieves rapid data acquisition speeds (reaching approximately 360,000 points per hour or even faster), and achieves high resolution (spatial and angular resolutions reaching 0.1 μm and 0.5 μm, respectively). This technology provides the foundation for rapid and efficient quantitative statistical analysis of a material's microstructure and texture, and has therefore become a valuable analytical tool in materials research.

[0051] Under laboratory conditions, the EBSD technique described above was able to demonstrate that cracks generated by ultrafast laser processing primarily occur along the cleavage planes of single-crystal diamond; this served as the basis for this paper.

[0052] The method described in this article can be applied to the scanning processing of hard and brittle single crystal materials such as single crystal diamond, sapphire, single crystal silicon, and single crystal silicon carbide. In the specific embodiments of this article, single crystal diamond is taken as an example to describe the ultrafast laser processing method, system and application of the present invention in detail.

[0053] In order to solve the problems of cracking of the processed surface and microcracks and edge collapse in the processed grooves caused by local thermal stress in the radiation zone during existing ultrafast laser processing of single crystal diamond, the present invention provides an embodiment to solve the above technical problems.

[0054] Specific embodiment 1:

[0055] like Figure 1 An ultrafast laser processing method comprises: orienting a single crystal diamond to determine the cleavage plane of the single crystal diamond; obtaining an intersection line between the cleavage plane and the surface to be processed by a crystal analysis technique, such as EBSD technology, and using the intersection line as the crystal plane trace of the cleavage plane; moving an ultrafast laser source along a set direction to control cracks and edge collapse on the single crystal diamond processing surface; the set direction is a crystal orientation of 0-90 degrees to the crystal plane trace.

[0056] In this example, "orienting a single crystal diamond" means establishing a coordinate system on the single crystal diamond, that is, selecting the coordinate axes (crystal axes) and determining the ratio (axis ratio) of the unit lengths (axis lengths) on each crystal axis; there are many methods for crystal orientation, such as the optical imaging method, the conoscopic method, the Laue orientation method, and the orientator.

[0057] The property of a crystal to split into smooth planes along a certain direction is called cleavage; the cracked surface is called a cleavage plane; and the cleavage plane is the crystal plane with the smallest strength in a single crystal material. Under the action of external force, the material tends to break along the cleavage plane.

[0058] Specifically, such as Figure 2 This article uses the scanning processing of crystal directions with angles of 0°, 45°, and 90° to the above-mentioned crystal plane traces as an example to explain the specific:

[0059] For example, the crystal direction and the crystal plane trace form an angle of 45°, and the scanning processing direction of the ultrafast laser source is parallel to the crystal direction. Since the scanning processing direction and the crystal plane trace form an angle of 45°, Figure 3 , cross-distributed cracks will appear on the processed surface, and the edge of the groove will produce a sharp angle of about 45°;

[0060] For example, the crystal direction and the crystal plane trace are at an angle of 0°, and the scanning processing direction of the ultrafast laser source is parallel to the crystal direction. Since the scanning processing direction is parallel or perpendicular to the crystal plane trace, Figure 4 , long cracks distributed transversely along the center of the groove and some short cracks distributed longitudinally are generated in the processed surface, the groove edge is more regular, and the shape of the chipping edge is a rectangle of about 90°;

[0061] For example, the crystal direction and the crystal plane trace are at an angle of 90°, and the scanning processing direction of the ultrafast laser source is parallel to the crystal direction. Since the scanning processing direction is parallel or perpendicular to the crystal plane trace, Figure 4 , long cracks distributed laterally along the center of the groove and some short cracks distributed longitudinally are generated in the processed surface, the groove edge is more regular, and the shape of the chipped edge is a rectangle of about 90°.

[0062] It can be seen that in specific production, in order to make the cracks and chipping on the processing surface of the single crystal diamond controllable, the laser source can be scanned so that the crystal direction along which the scanning motion is performed is at an angle of 0° or 90° with the above-mentioned crystal plane trace, thereby obtaining long cracks distributed laterally along the center of the groove and some short cracks distributed longitudinally; at the same time, a rectangular chipping of about 90° is obtained, making the groove edge more regular and reducing the area of ​​the chipping; after obtaining regular cracks and chipping, the performance and service life of the single crystal diamond component can be improved; moreover, the method described in the above embodiment does not improve the optical system in the processing system, such as adding optical modulation elements, etc., which reduces the processing cost and makes the method described in the present invention more adaptable.

[0063] Specific embodiment II:

[0064] During the specific production process, due to defects in the processing technology, an excessive number of cracks will appear when processing the grooves. At this time, the technical means of specific embodiment I can only adjust the crack angle and the shape of the broken edge in the processing groove, and cannot solve the problem of excessive number of cracks. At this time, it is necessary to explore a convenient and efficient method to control the number of cracks.

[0065] The present invention provides an embodiment:

[0066] An ultrafast laser processing method, in addition to the steps described in Specific Example I, further includes: during ultrafast laser processing, adjusting the scanning speed of the ultrafast laser source to reduce the number of cracks on the processed surface.

[0067] Specifically, such as Figure 3 As shown in FIG, when the number of cracks processed along the crystal direction represented by D exceeds a predetermined number, increasing the scanning speed of the ultrafast laser source can significantly control the number of cracks; preferably, when the laser repetition frequency is a preset value, such as 100 kHz, the scanning speed of the ultrafast laser source is increased to above 4 mm / s, such as 4-9 mm / s; at this time, since the time of interaction between the laser and the material is reduced, the laser energy absorbed by the single crystal diamond is greatly reduced, the thermal stress generated by the laser irradiation is small and does not reach the critical condition for causing cracking, the material on the single crystal diamond is removed by ablation, and no cracks are generated on the processed surface and the edge of the groove, and finally the result is as shown in FIG. Figure 5The processed surface shown in the figure effectively controls the number of cracks. If the scanning speed is too high, such as greater than 9 mm / s, the thermal stress generated by laser irradiation is too small to ablate, but more cracks will be generated. Similarly, when the laser repetition frequency is set to 100 kHz, if the scanning speed of the above-mentioned ultrafast laser source is reduced, such as to below 2 mm / s, such as 0.5-2 mm / s, the number of laser pulses received per unit area of ​​the single crystal diamond increases, the laser energy absorbed by the material increases, and the ablation depth in the groove is greater than the crack depth. Therefore, the crack layer can be removed to form a smooth groove bottom, and the result is as shown in the figure. Figure 7 The machined surface shown in the figure also effectively reduces the number of cracks. If the scanning speed is too slow, such as less than 0.5 mm / s, the ablation depth in the groove will be too large, resulting in too many cracks at the bottom of the groove.

[0068] Observable, such as Figure 4 As shown in the figure, the number of cracks processed along the crystal direction represented by C exceeds the predetermined number. At this time, increasing the scanning speed of the above-mentioned ultrafast laser source can significantly control the number of cracks. Preferably, when the laser repetition frequency is set to 100 kHz, the scanning speed of the above-mentioned ultrafast laser source is increased to 4 mm / s. At this time, due to the shortened interaction time between the laser and the material, the laser energy absorbed by the single crystal diamond is greatly reduced, the thermal stress generated by the laser irradiation is small and does not reach the critical condition for causing cracking. The material on the single crystal diamond is removed by ablation, and no cracks are generated on the processed surface and the edge of the groove. Finally, the following is obtained: Figure 6 The processed surface shown in the figure effectively controls the number of cracks. When the laser repetition frequency is set to 100 kHz, if the scanning speed of the ultrafast laser source is reduced to 2 mm / s, the number of laser pulses received per unit area of ​​the single crystal diamond increases, the laser energy absorbed by the material increases, and the ablation depth in the groove is greater than the crack depth. Therefore, the crack layer can be removed to form a smooth groove bottom, and the result is as shown in the figure. Figure 8 The machined surface shown also effectively reduces the number of cracks.

[0069] It can be seen that when the surface of the single-crystal diamond produces more than a predetermined number of cracks along different crystal directions, the above process can be adjusted. For example, when the laser repetition frequency is 100 kHz, the scanning speed can be increased to 4-9 mm / s or reduced to 0.5-2 mm / s, which can effectively control the number of cracks and further improve the working performance and service life of the single-crystal diamond components.

[0070] Specific embodiment III:

[0071] In order to implement the above-mentioned methods of specific embodiments I and II, the present invention provides an embodiment;

[0072] like Figure 9An ultrafast laser processing system includes: an ultrafast laser 100 for emitting ultrafast laser light, an optical component 200, a scanning galvanometer 300, and a control unit 400; wherein the optical component 200 is arranged at the output end of the ultrafast laser 100, and is used to optically process the ultrafast laser light emitted by the ultrafast laser 100 to obtain processed ultrafast laser light; the scanning galvanometer 300 is arranged at the output end of the optical component 200, and is used to receive the processed ultrafast laser light and output ultrafast laser light for scanning processing; the control unit 400, such as a computer, is connected to the ultrafast laser 100, and is used to adjust the laser energy density and repetition frequency of the ultrafast laser 100, and is connected to the scanning galvanometer 300, and is used to control the moving direction and moving speed of the processed ultrafast laser light using the ultrafast laser processing method described above.

[0073] Specifically, the optical assembly 200 includes: a first reflector mechanism 201, a beam expander 202, and a second reflector mechanism 203; wherein, the first reflector mechanism 201 is arranged at the output end of the ultrafast laser 100; the beam expander 202 is arranged at the output end of the first reflector mechanism 201, for receiving the laser beam output from the first reflector mechanism 201 and expanding the beam; the second reflector mechanism 203 is arranged at the output end of the beam expander 202, for receiving the expanded laser beam output from the beam expander 202; the second reflector mechanism 203 is arranged at the input end of the scanning galvanometer 300, for providing the expanded laser beam to the scanning galvanometer 300.

[0074] Optionally, the first reflector mechanism 201 and the second reflector mechanism 203 have the same structure; they are composed of at least two mutually parallel plane reflectors; in this embodiment, the above-mentioned first reflector mechanism 201 and the second reflector mechanism 203 are used in the ultrafast laser system as a return mirror, so that the optical system composed of the ultrafast laser 100 is more space-saving, and can reduce laser loss, and retain the laser working power to the greatest extent; preferably, the first reflector mechanism 201 includes two parallel plane reflectors; the plane reflectors are set at 45°, which can save optical path design space, reduce laser loss, and retain the laser working power to the greatest extent.

[0075] The present invention also provides an embodiment:

[0076] An electronic device for scanning and processing crystals, comprising: a storage medium and a processing unit; the storage medium is used to store a computer program; the processing unit exchanges data with the storage medium, and is used to execute the computer program through the processing unit when processing the crystal to perform the steps of the ultrafast laser processing method described above.

[0077] In the above-mentioned electronic device, the storage medium is preferably a storage device such as a mobile hard disk, a solid-state hard disk, or a USB flash drive; the processing unit, preferably a CPU, exchanges data with the above-mentioned storage medium, and is used to execute the above-mentioned computer program through the above-mentioned processing unit when processing the crystal, and perform the steps of the ultrafast laser processing method as described above.

[0078] The CPU can execute various appropriate actions and processes according to the program stored in the storage medium. The electronic device also includes the following peripherals, including input parts such as a keyboard and a mouse, and output parts such as a cathode ray tube (CRT), a liquid crystal display (LCD), and a speaker; in particular, according to the embodiments disclosed in the present invention, Figure 1 Any of the processes described in can be implemented as a computer software program.

[0079] An embodiment of the present invention includes a computer program product, which includes a computer program carried on a computer readable medium, wherein the computer program includes a method for executing the following steps: Figure 1 The computer program can be downloaded and installed from the Internet. When the computer program is executed by the CPU, the above functions defined in the system of the present invention are performed.

[0080] The present invention also provides an embodiment:

[0081] A computer-readable storage medium: the computer-readable storage medium stores a computer program; when the computer program is run, the steps of the ultrafast laser processing method described above are executed.

[0082] In the present invention, a computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, apparatus, or device. Furthermore, in the present invention, a computer-readable signal medium may include a data signal propagated in baseband or as part of a carrier wave, which carries computer-readable program code. This propagated data signal may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. A computer-readable signal medium may also be any computer-readable medium other than a computer-readable storage medium that can transmit, propagate, or transfer a program for use by or in conjunction with an instruction execution system, apparatus, or device. The program code contained on the computer-readable medium may be transmitted using any suitable medium, including but not limited to wireless, wired, optical cable, RF, etc., or any suitable combination thereof.

[0083] The above disclosures are only a few specific implementation scenarios of the present invention, but the present invention is not limited thereto. Any changes that can be conceived by those skilled in the art should fall within the scope of protection of the present invention. The above invention numbers are for descriptive purposes only and do not represent the advantages or disadvantages of the implementation scenarios.

Claims

1. An ultrafast laser processing method, characterized in that: include: orienting the crystal to be processed to determine the cleavage plane of the crystal to be processed; Obtain the alignment between the cleavage plane and the processing plane of the crystal to be processed The intersection line is used as the crystal plane trace of the cleavage plane; Moving the ultrafast laser source along a set direction to scan the crystal to be processed, so that cracks and edge collapse on the processing surface of the crystal to be processed can be controlled; The set direction is: a crystal direction that is 0-90° with respect to the crystal plane trace of the cleavage plane; Among them, when the laser repetition frequency is a preset value, the scanning speed of the ultrafast laser source ranges from 0.5 mm / s to 2 mm / s, the number of laser pulses received per unit area of ​​the crystal to be processed increases, the laser energy absorbed by the material increases, and the ablation depth in the groove is greater than the cracking depth, so as to remove the crack layer, form a smooth groove bottom, and reduce the number of cracks.

2. The ultrafast laser processing method according to claim 1, characterized in that: The crystal direction forms an angle of 45° with the crystal plane trace, and the scanning processing direction of the ultrafast laser source is parallel to the crystal direction, so cross-distributed cracks and chipped edges with a sharp angle of 30°-60° are obtained on the processing surface of the crystal to be processed.

3. The ultrafast laser processing method according to claim 1, characterized in that: The crystal direction forms an angle of 0° or 90° with the crystal plane trace, and the scanning processing direction of the ultrafast laser source is parallel to the crystal direction, so that non-intersecting horizontal and vertical cracks and 80°-100° edge collapse are obtained on the processing surface of the crystal to be processed.

4. An ultrafast laser processing system, characterized in that: include: Ultrafast lasers; an optical component, disposed at an output end of the ultrafast laser, for optically processing the ultrafast laser light emitted by the ultrafast laser to obtain processed ultrafast laser light; a scanning galvanometer, disposed at the output end of the optical component, for receiving the processed ultrafast laser and outputting ultrafast laser for scanning processing; a control unit connected to the scanning galvanometer, for controlling the moving direction and moving speed of the ultrafast laser using the ultrafast laser processing method according to any one of claims 1 to 3; The control unit is connected to the ultrafast laser and is used to adjust the energy density and repetition frequency of the ultrafast laser used for scanning processing.

5. The ultrafast laser processing system according to claim 4, characterized in that: The optical component comprises: A first reflector mechanism is provided at the output end of the ultrafast laser; a beam expander, disposed at an output end of the first reflector mechanism, for receiving the laser beam output from the first reflector mechanism and expanding the beam; a second reflector mechanism, disposed at an output end of the beam expander, for receiving the expanded laser beam output from the beam expander; The second reflector mechanism is arranged at the input end of the scanning galvanometer, and is used to provide the expanded laser beam to the scanning galvanometer.

6. An electronic device for processing crystals, characterized in that: include: Storage medium for storing computer programs; A processing unit exchanges data with the storage medium, and is used to execute the computer program through the processing unit when processing a crystal to perform the steps of the ultrafast laser processing method according to any one of claims 1 to 3.

7. A computer-readable storage medium, characterized in that: The computer readable storage medium stores a computer program; When the computer program is run, the computer program executes the steps of the ultrafast laser processing method according to any one of claims 1 to 3.

8. Application of the ultrafast laser processing method according to any one of claims 1 to 3 in processing single crystal diamond, sapphire, single crystal silicon, or single crystal silicon carbide.

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