Film-forming equipment, film-forming methods and methods for manufacturing articles
By using magnetic force to control the mask to bend into a convex shape and make it in close contact with the substrate, the problems of misalignment and wrinkles between the substrate and the mask are solved, and a high-precision film deposition process is achieved.
Patent Information
- Application Number
- CN202210874546.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2021-07-27
- Filing Date
- 2022-07-25
- Publication Date
- 2025-10-28
- Estimated Expiration
- 2042-07-25
AI Technical Summary
In existing film deposition equipment, it is difficult to achieve good reproducibility in the alignment of the substrate and the mask, and misalignment and wrinkles are easily generated when the mask comes into contact with the substrate.
A magnetic force generating component controls the mask to bend into a convex shape with a first curvature, and a substrate holding component ensures close contact between the substrate and the mask. A control component controls the cooperation between the magnetic force generating component and the substrate holding component to achieve precise alignment and close contact between the substrate and the mask.
It achieves high-precision alignment and good reproducible contact between the substrate and the mask, reduces misalignment and mask wrinkles, and improves the reliability of the film deposition process.
Smart Images

Figure CN115679253B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to film-forming equipment, film-forming methods, and methods for manufacturing articles. Background Technology
[0002] Organic EL (electroluminescent) panels can be used in smartphones, televisions, automotive displays, VR-HMD (virtual reality head-mounted displays), and more.
[0003] Organic EL panels have multiple organic light-emitting elements (organic EL elements; OLED (organic light-emitting diode)) as multiple display elements (pixels). To form the organic light-emitting elements, film-forming material discharged from the film-forming source of a film-forming apparatus is formed on a substrate via a mask containing a pixel pattern formed therein, thereby forming an organic layer or a metal layer. To manufacture organic EL panels for VR-HMDs, the pixel pattern needs to be formed with high precision to prevent user dizziness (so-called VR sickness).
[0004] In conventional film deposition equipment, the substrate is attracted to an electrostatic chuck or similar object, and a permanent magnet is brought close to the substrate from above the electrostatic chuck. As a result of this or other processes, a mask located below the substrate is lifted and comes into contact with the substrate. In the film deposition equipment described in Japanese Patent Application Publication No. 2019-116679, multiple permanent magnets are individually controlled. As a result of this or other processes, a mask is lifted and comes into contact with the substrate.
[0005] However, in conventional film deposition equipment, changes in the orientation or velocity of the permanent magnet alter the way the mask approaches the substrate. Consequently, good reproducibility in substrate-mask contact is not achieved. This can lead to misalignment between the substrate and mask. Furthermore, tight contact between the mask and substrate can cause mask wrinkles.
[0006] This invention provides a technique that enables a substrate and a mask to contact each other with good reproducibility. Summary of the Invention
[0007] According to one aspect of the invention, a film-forming apparatus is provided, configured to form a film-forming material on a substrate via a mask. The film-forming apparatus includes: a substrate holding member configured to hold the substrate; a mask holding member configured to hold a mask such that the mask is opposite to the substrate held on the substrate holding member; a magnetic force generating member configured to generate a magnetic force to bend the mask held on the mask holding member into a convex shape toward the substrate held on the substrate holding member; and a control member configured to control the substrate holding member and the magnetic force generating member, wherein the control member controls the magnetic force generating member to bend the mask with a first curvature, and controls the substrate holding member to bring the substrate closer to and into contact with the mask while the mask is held bent with the first curvature.
[0008] According to one aspect of the present invention, a film-forming apparatus is provided, configured to form a film-forming material on a substrate via a mask, the film-forming apparatus comprising: a substrate holding member configured to hold a substrate; a mask holding member configured to hold a mask such that the mask is opposite to the substrate held on the substrate holding member; a magnetic force generating member configured to generate a magnetic force for bending the mask held on the mask holding member into a convex shape toward the substrate held on the substrate holding member; and a control member configured to control the substrate holding member and the magnetic force generating member, wherein the control member controls the magnetic force generating member to apply a specific magnetic force to the mask, and controls the substrate holding member to bring the substrate closer to and into contact with the mask while the specific magnetic force is applied to the mask.
[0009] According to one aspect of the present invention, a film-forming method is provided, the method comprising: holding a substrate on a substrate holding member; holding a mask on a mask holding member such that the mask is opposite to the substrate held on the substrate holding member; controlling a magnetic force generating member such that the mask held on the mask holding member is bent into a convex shape toward the substrate held on the substrate holding member by a first curvature under the action of a magnetic force generated by the magnetic force generating member; controlling the substrate holding member such that the substrate is brought closer to the mask while the mask is held bent at the first curvature; performing alignment between the substrate and the mask after bringing the substrate closer to the mask; controlling at least one of the substrate holding member and the magnetic force generating member such that the mask is in close contact with the substrate after alignment; and forming a film-forming material on the substrate via the mask while the mask is in close contact with the substrate.
[0010] According to one aspect of the present invention, a film-forming method is provided, the method comprising: holding a substrate on a substrate holding member; holding a mask on a mask holding member such that the mask is opposite to the substrate held on the substrate holding member; controlling a magnetic force generating member configured to generate a magnetic force such that a specific magnetic force generated by the magnetic force generating member is applied to the mask, and such that the mask held on the mask holding member is bent into a convex shape toward the substrate held on the substrate holding member; controlling the substrate holding member such that the substrate is brought closer to the mask while the specific magnetic force is applied to the mask; performing alignment between the substrate and the mask after bringing the substrate closer to the mask; controlling at least one of the substrate holding member and the magnetic force generating member such that the mask is in close contact with the substrate after alignment; and forming a film-forming material on the substrate via the mask while the mask is in close contact with the substrate.
[0011] According to one aspect of the present invention, a method for manufacturing an article is provided, the article comprising a substrate and a film-forming material film formed on the substrate, the method comprising: holding the substrate on a substrate holding member; holding a mask on a mask holding member such that the mask is opposite to the substrate held on the substrate holding member; controlling a magnetic force generating member such that the mask held on the mask holding member is bent into a convex shape toward the substrate held on the substrate holding member by a first curvature under the action of a magnetic force generated by the magnetic force generating member; controlling the substrate holding member such that the substrate is brought closer to the mask while the mask is held bent at the first curvature; performing alignment between the substrate and the mask after bringing the substrate closer to the mask; controlling at least one of the substrate holding member and the magnetic force generating member such that the mask is in close contact with the substrate after alignment; and forming a film-forming material on the substrate via the mask while the mask is in close contact with the substrate.
[0012] According to one aspect of the present invention, a method of manufacturing an article is provided, the article comprising a substrate and a film-forming material film formed on the substrate, the method comprising: holding the substrate on a substrate holding member; holding a mask on a mask holding member such that the mask is opposite to the substrate held on the substrate holding member; controlling a magnetic force generating member configured to generate a magnetic force such that a specific magnetic force generated by the magnetic force generating member is applied to the mask, and such that the mask held on the mask holding member is bent into a convex shape toward the substrate held on the substrate holding member; controlling the substrate holding member such that the substrate is brought closer to the mask while the specific magnetic force is applied to the mask; performing alignment between the substrate and the mask after bringing the substrate closer to the mask; controlling at least one of the substrate holding member and the magnetic force generating member such that the mask is in close contact with the substrate after alignment; and forming a film-forming material on the substrate via the mask while the mask is in close contact with the substrate.
[0013] Other features of the invention will become apparent from the following description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description
[0014] Figure 1A This is a longitudinal cross-sectional view of a film-forming apparatus according to a first embodiment of the present invention;
[0015] Figure 1B This is a top view of a movable element according to a first embodiment of the present invention;
[0016] Figure 1C This is a top view of the mask frame according to the first embodiment of the present invention;
[0017] Figure 2 This is a schematic diagram illustrating the movement principle of a movable element according to a first embodiment of the present invention;
[0018] Figure 3This is a schematic diagram illustrating the structure of a film-forming system according to a first embodiment of the present invention;
[0019] Figures 4A to 4E All are schematic diagrams illustrating the operation of the film-forming apparatus according to the first embodiment of the present invention;
[0020] Figure 5 This is a schematic diagram illustrating the state transition of a mask according to a first embodiment of the present invention;
[0021] Figures 6A to 6F All are schematic diagrams illustrating the operation of the film-forming apparatus according to the second embodiment of the present invention;
[0022] Figure 7 This is a schematic diagram illustrating the state transition of a mask according to a second embodiment of the present invention;
[0023] Figure 8 This is a schematic diagram illustrating the state transition of a mask according to a third embodiment of the present invention;
[0024] Figure 9 This is a schematic diagram illustrating the state transitions of a mask according to a fourth embodiment of the present invention; and
[0025] Figure 10 This is a schematic diagram illustrating the structure of a film-forming apparatus according to a fifth embodiment of the present invention. Detailed Implementation
[0026] First embodiment
[0027] The first embodiment of the present invention will now be described with reference to the accompanying drawings. For constituent elements that can exist in multiples, reference symbols with only common digits are used when no special distinction is required; otherwise, lowercase letters are appended after the reference digits for individual distinction.
[0028] Here, the coordinate axes, directions, etc., used in the following description will be defined. First, the X-axis is taken horizontally along the conveying direction of the movable element 101, which will be described later; this conveying direction of the movable element 101 is called the X-direction. On the other hand, the Z-axis is taken vertically along a direction orthogonal to the X-direction; this vertical direction is called the Z-direction. The vertical direction is the direction of gravity (mg direction). Furthermore, the Y-axis is taken along a direction orthogonal to both the X-direction and the Z-direction; this direction is called the Y-direction. In addition, the rotational direction about the X-axis is called the Wx direction; the rotational direction about the Y-axis is called the Wy direction; and the rotational direction about the Z-axis is called the Wz direction.
[0029] Incidentally, the transmission direction of the movable element 101 is not necessarily required to be horizontal. However, even when the transmission direction of the movable element 101 is not horizontal, the Y and Z directions can be similarly defined using the transmission direction as the X direction. Incidentally, the X, Y, and Z directions are not necessarily limited to being orthogonal to each other; they can also be defined as intersecting directions.
[0030] Description of the structure of film-forming equipment
[0031] Figure 1A This is a longitudinal cross-sectional view of the film-forming apparatus 1 according to the first embodiment. Figure 1A This can also be described as a schematic cross-sectional view of the film-forming apparatus 1 viewed from the X direction. The film-forming apparatus 1 includes a vacuum container 111. Inside the vacuum container 111 are arranged movable elements 101, a deposition source 113 (film-forming source), an actuator 114, a portion of a platform 112, etc. A mask M (mask foil) can be mounted on the platform 112. The deposition source 113 can be moved by the actuator 114 mounted on the platform 112. The deposition source 113 can move not only in the Z direction, but also in the Y and X directions. Incidentally, in other figures showing the film-forming apparatus 1, the vacuum container 111, platform 112, deposition source 113, etc., have been appropriately omitted. Figure 1B This is a top view of the movable element 101. Figure 1C This is a top view of the mask frame 107 (and mask M).
[0032] Magnet 102 and electrostatic chuck 109 are attached to movable element 101. By controlling the electromagnetic force between magnet 102 and stator 103, the forces acting between movable element 101 and stator 103 (forces in the X, Y, Z, Wx, Wy, and Wz directions) can be controlled. Electrostatic chuck 109 is a substrate holding member for holding substrate W thereon, and substrate W can be held by adsorbing it onto the adsorption surface of electrostatic chuck 109 (on...). Figure 1A The substrate W is held on the lower surface (the surface on the opposite side in the Z direction). The substrate W is, for example, a glass substrate.
[0033] The permanent magnet 104 is disposed on the side opposite to the substrate W via the electrostatic chuck 109 (in Figure 1A The middle is the upper side (in the Z direction). The lifting component 105 can vertically move the permanent magnet 104, so that the space (distance) between the permanent magnet 104 and the electrostatic chuck 109 in the Z direction can be changed. In other words, the vertical position (height; position in the Z direction) of the permanent magnet 104 can be controlled.
[0034] The mask frame 107 is positioned on the opposite side of the permanent magnet 104, separated by the electrostatic chuck 109 and the substrate W. Figure 1AThe middle side is the lower side (opposite to the Z direction). The mask frame 107 is a mask holding member used to hold the mask M such that the mask M is opposite to the substrate W held at the electrostatic chuck 109. For example, the ends of the mask M are fixed to the mask frame 107 by spot welding or the like. Figure 1C In this process, multiple masks M are fixed to a mask frame 107. Alignment marks 115 are pre-formed on the masks M. Incidentally, although not shown, alignment marks are also pre-formed on the substrate W. Furthermore, a mask ID 116 (a numbering feature of the mask M) corresponding to the mask M is also attached to the mask frame 107. The mask ID 116 can be read by a mask ID reader (not shown). Incidentally, the mask ID 116 can be attached to the mask M. A barcode or the like can be used instead of the mask ID 116. The mask M is, for example, a mask made of metal, and is called a fine metal mask.
[0035] The alignment observer 106 can simultaneously capture images of alignment marks formed on the substrate W and alignment marks formed on the mask M through a space (opening) formed in the electrostatic chuck 109. The alignment observer 106 can then detect the amount of misalignment (alignment error) between the substrate W and the mask M in the horizontal direction (X and Y directions) based on the position of the alignment marks in the captured images. For example, the amount of misalignment between the alignment marks on the substrate W and the alignment marks on the mask M can be detected as an alignment error.
[0036] The gap sensor 110 can detect the space between the substrate W and the mask M in the vertical direction (Z direction). For example, an optical sensor can be used as the gap sensor 110. Considering that the mask M is made of metal, an eddy current sensor or the like can also be used as the gap sensor 110.
[0037] Explanation of the movement principle of movable elements
[0038] The force acting on the movable element 101 can be controlled using, for example, the method disclosed in Japanese Patent Application Publication No. 2020-28212. Japanese Patent Application Publication No. 2020-28212 discloses controlling the force in four directions by controlling the current of the coils opposite to the array of permanent magnets arranged in a row.
[0039] Reference Figure 2 A brief explanation is provided. Figure 2 This is a top view illustrating an example of the movement principle of the movable element 101. (See attached image.) Figure 2 As shown, in the first embodiment, magnet 102A includes permanent magnet groups 201 and 202. In permanent magnet group 201, the magnetized surfaces repeat in an alternating reverse manner in the X direction. In permanent magnet group 202, the magnetized surfaces repeat in an alternating reverse manner in the Y direction.
[0040] according to Figure 2 By controlling the current in the stator 103 opposite to the permanent magnet assembly 201, the forces in the X, Z, and Wy directions can be controlled. Furthermore, by controlling the current in the stator 103 opposite to the permanent magnet assembly 202, the force in the Y direction can be controlled. Therefore, as forces acting on magnet 102A, forces in the X, Y, Z, and Wy directions can be controlled. Similarly, as forces acting on magnet 102B, forces in the X, Y, Z, and Wy directions can be controlled. By combining the forces acting on magnet 102A in the four directions and the forces acting on magnet 102B in the four directions, forces in the X, Y, Z, Wx, Wy, and Wz directions can be controlled individually (these are forces acting on movable element 101). As a result, movable element 101 can move in the desired direction while magnetically levitating relative to stator 103.
[0041] Description of the structure of the film-forming equipment control
[0042] Figure 3 This is a block diagram illustrating an example of the construction of a film-forming device 1. Figure 3 In this context, the film-forming controller 300, control component 301, movable element control component 303, communication component 304, etc., may or may not be part of the film-forming apparatus 1. In other words, Figure 3 It can be understood as a block diagram of film-forming equipment 1, or as a block diagram of film-forming system (control system) including film-forming equipment 1.
[0043] The internal control unit 305 is a control unit disposed in the movable element 101. The internal control unit 305 is communicatively connected to the lifting unit 105, the alignment observer 106, and the gap sensor 110. The internal control unit 305 can control the connected components.
[0044] The control unit 301 is communicatively connected to the film-forming controller 300, the movable element control unit 303, and the communication unit 304, and controls the movable element control unit 303 and the communication unit 304 in response to commands from the film-forming controller 300. The communication unit 304 can communicate with the internal control unit 305. Therefore, the control unit 301 can control the internal control unit 305 by controlling the communication unit 304.
[0045] An example of control will be illustrated.
[0046] The movable element control unit 303 calculates the current value of the stator 103 (coil) used to move the movable element 101 to the target position based on the target position of the movable element 101 notified by the control unit 301 and the position / attitude information output from the position / attitude sensor group 306. The movable element control unit 303 then notifies the current control unit 307 of the calculated current value. The position / attitude sensor group 306 is a sensor group used to detect the position and attitude of the movable element 101. The current control unit 307 controls the amount of current in the stator 103 based on the notified current value. By supplying current to the stator 103, an electromagnetic force is generated acting on the magnet 102 disposed at the movable element 101, thereby controlling the position of the movable element 101 to the target position.
[0047] The communication unit 304 communicates with the internal control unit 305 located at the movable element 101 and acquires information such as the alignment error between the substrate W and the mask M (detected by the alignment observer 106) and the space between the substrate W and the mask M (detected by the gap sensor 110). The communication unit 304 then outputs the information acquired from the internal control unit 305 to the control unit 301. The control unit 301 determines a new target position for the movable element 101 based on the information output from the communication unit 304 and notifies the movable element control unit 303 of this new target position.
[0048] By performing (repeatedly) the controls described above, the alignment error between the substrate W and the mask M can be significantly reduced. The vertical space between the substrate W and the mask M can also be controlled to a target space. While maintaining the positional relationship between the substrate W and the mask M in one of the horizontal or vertical directions, the positional relationship between the substrate W and the mask M in the other of the horizontal or vertical directions can be changed. For example, the substrate W can be made to contact the mask M vertically.
[0049] Operating instructions for film-forming equipment
[0050] Figures 4A to 4E All are cross-sectional views illustrating the operation of the film-forming apparatus 1 used to perform film formation. From Figures 4A to 4E The state transition is achieved in the following ways: for example, the control unit 301 responds to the user's operation or automatically executes the control. After alignment between the substrate W and the mask M is performed in the film deposition chamber (deposition chamber), the evaporation source 113 is moved ( Figure 1A To perform film formation (deposition).
[0051] Figure 4A The diagram shows the state immediately following the mounting of the substrate W onto the electrostatic chuck 109 and the mounting of the mask M onto the mask frame 107. Figure 4AIn this configuration, the permanent magnet 104 is fully separated from the mask M. Therefore, the magnetic force (attraction) exerted on the mask M by the permanent magnet 104 is relatively small compared to the gravity acting on the mask M. Consequently, the mask M remains stable in a concave shape, thus moving away from the substrate W.
[0052] First, the permanent magnet 104 is lowered (bringing the permanent magnet 104 closer to the mask M until a specific position is reached) to change the state of the film forming apparatus 1 from Figure 4A The state transition to Figure 4B The state of the mask M. When the permanent magnet 104 is lowered and exceeds a given position, the magnetic force exerted on the mask M from the permanent magnet 104 (the force that lifts the mask M) exceeds the gravity acting on the mask M. As a result of the specific magnetic force exerted on the mask M from the permanent magnet 104, which is greater than gravity, the state of the mask M changes from a state where the mask M bends into a concave shape away from the substrate W. Figure 4A The mask M is bent into a convex shape to get closer to the substrate W. Figure 4B Therefore, the permanent magnet 104 serves as a magnetic force generating component to generate a magnetic force that causes the mask M, held on the mask frame 107, to bend into a convex shape toward the substrate W, held on the electrostatic chuck 109. Typically, the central portion of the mask M is closest to the substrate W.
[0053] exist Figure 4B In the diagram, the forces Fr and Fm acting on the mask M are represented by arrows. The length of the arrow indicates the magnitude of the force. Force Fm is the magnetic force exerted on the mask M by the permanent magnet 104 (the force of the permanent magnet 104 used to lift the mask M), and force Fr is the resultant force of gravity acting on the mask M and the stress acting on the mask M due to deformation of the mask M. When the magnetic force Fm and the resultant force Fr are equal (well balanced), the state of the mask M becomes stable. This stable state depends only on the final position of the permanent magnet 104, and not on the orientation and speed of the permanent magnet 104, thus enabling high reproducibility.
[0054] Then, without changing the position of the permanent magnet 104, the movable element 101 (electrostatic chuck 109; substrate W) is lowered, thereby changing the state of the film deposition apparatus 1 from [previous state]. Figure 4B state to Figure 4C The state transition occurs. By lowering the movable element 101 (electrostatic chuck 109; substrate W), the substrate W is brought closer to the mask M, resulting in a smaller space between the substrate W and the mask M. Figure 4C In this state, alignment is performed between the substrate W and the mask M. When the space between the substrate W and the mask M is short, the alignment marks of the mask M and the alignment marks of the substrate W can be well imaged by the alignment observer 106. Therefore, in Figure 4CIn this state, alignment errors can be detected with high precision, and alignment can be performed with high precision. Alignment is achieved in the following manner: the control unit 301 responds to user operations or automatically performs control.
[0055] Then, without changing the position of the permanent magnet 104, the movable element 101 (electrostatic chuck 109; substrate W) is further lowered, thereby realizing the movement from... Figure 4C state to Figure 4D The state transition occurs. By lowering the movable element 101 (electrostatic chuck 109; substrate W), the substrate W moves closer to the mask M, and the substrate W contacts the mask M. Therefore, in the first embodiment, after alignment is performed with high precision, the state of the mask M remains unchanged. Figure 4B The mask M is bent into a convex shape with a first curvature, and the substrate W is brought closer to and in contact with the mask M. Through this process, changes in the position of the mask M where it first contacts the substrate W, and changes in the position of the substrate W where the mask M first contacts, can be suppressed; in other words, misalignment between the substrate W and the mask M can be suppressed. Therefore, the substrate W and the mask M can contact each other with good reproducibility.
[0056] Then, the permanent magnet 104 is lowered, and the state of the film-forming device 1 changes from... Figure 4D The state to Figure 4E The state transition. By lowering the permanent magnet 104, the magnetic force applied to the mask M from the permanent magnet 104 increases, causing the mask M to change to a state with a higher magnetic force than the permanent magnet 104. Figure 4D The force exerted under these conditions is greater, pressing against the substrate W. As a result, the mask M and the substrate W are in close contact.
[0057] In the first embodiment, after the substrate W is brought into contact with the mask M and before the permanent magnet 104 is lowered, the substrate W is further lowered, thereby achieving... Figure 4D The state of the mask M. Using this process, by suppressing misalignment, most of the mask M can be made in contact with the substrate W. As a result, the generation of wrinkles, etc., in the mask M can be suppressed, and the mask M can be made in close contact with the substrate W. Incidentally, when the mask M achieves sufficient close contact with the substrate W simply by further lowering the substrate W after contacting the mask M, it is not necessary to lower the permanent magnet 104. After contacting the substrate W with the mask M, only one of the substrate W and the permanent magnet 104 can be lowered, or both can be lowered.
[0058] exist Figure 4E In this state, the film-forming material (evaporated material) is formed on the substrate W through the mask M. For example, when the evaporation source 113 ( Figure 1AWhen the vapor deposition material is evaporated from the lower side of the mask M, the vapor deposition material is formed (deposited) on the substrate W according to the pattern formed on the mask M, thereby forming a layer and completing the vapor deposition. During the completion of the vapor deposition, the permanent magnet 104... Figure 4E The state is raised so that the mask M can be released from the substrate W.
[0059] Incidentally, using this film-forming method, articles comprising a substrate and a film-forming material film formed on the substrate W can be manufactured. Therefore, the film-forming method can be understood as at least part of a method for manufacturing an article. This article is, for example, an electronic device, such as an organic EL (electroluminescent) panel or an organic light-emitting element (organic EL element; OLED (organic light-emitting diode)). An organic EL panel is a display panel having multiple organic light-emitting elements as multiple display elements (pixels). To manufacture the organic light-emitting elements, for example, multiple openings (recesses) are formed in the substrate W by etching or the like. With the pixel pattern formed in the mask pattern aligned with the multiple openings, organic material is deposited into each opening, thereby forming a light-emitting layer (organic EL layer) in each opening.
[0060] Explanation of mask state transitions
[0061] Figure 5 This schematically illustrates the state of mask M from Figures 4A to 4E The curve of the transformation. In Figure 5 In the diagram, the horizontal axis represents the vertical position Zr (height; position in the Z direction) of the central portion of mask M, and the vertical axis represents the forces Fm and Fr. As mentioned above, force Fm is the magnetic force exerted on mask M by permanent magnet 104 (the force of permanent magnet 104 used to lift mask M), and force Fr is the resultant force of gravity acting on mask M and the stress acting on mask M due to deformation of mask M. Point P represents the state of mask M (mask state).
[0062] Figure 5 The horizontal axis represents the vertical position Zr of the mask M. The origin (zero position) is the same as the vertical position of the mask frame 107. The negative position is the vertical position that is lower than the vertical position of the mask frame 107, and the positive position is the vertical position that is higher than the vertical position of the mask frame 107.
[0063] Figure 5 The vertical axis represents the magnetic force Fm, with upward force being the positive force. Figure 5The diagram illustrates two magnetic forces, Fm1 and Fm2. Magnetic force Fm1 is the magnetic force Fm when the vertical position of the permanent magnet 104 is at the first position. Magnetic force Fm2 is the magnetic force Fm when the vertical position of the permanent magnet 104 is at the second position, which is lower than the first position. When the vertical position Zr of the mask M is constant, the lower the vertical position of the permanent magnet 104, the shorter the space between the mask M and the permanent magnet 104, and the greater the magnetic force Fm. Therefore, magnetic force Fm2 is greater than magnetic force Fm1. Furthermore, when the vertical position of the permanent magnet 104 is constant, the higher the vertical position Zr of the mask M, the shorter the space between the mask M and the permanent magnet 104, and the greater the magnetic force Fm. Therefore, the higher the vertical position Zr of the mask M, the greater both magnetic forces Fm1 and Fm2.
[0064] also, Figure 5 The vertical axis represents the resultant force Fr, with downward force considered positive. The higher the vertical position Zr of mask M, the smaller the upward stress acting on mask M, and the larger the downward stress acting on mask M. Therefore, the higher the vertical position Zr of mask M, the larger the resultant force Fr.
[0065] Information such as the relationship between the vertical position Zr and the resultant force Fr is inherent to the mask M and also depends on the tension of the mask M when it is mounted on the mask frame 107. For example, for each of the multiple masks, the information inherent in the mask is associated with the mask ID and is pre-stored in a storage unit (not shown). Then, the control unit 301 retrieves the information inherent in the mask M in use (e.g., the relationship between the vertical position Zr and the resultant force Fr) from the storage unit based on the mask ID 116 read by the mask ID reader (not shown), and controls the permanent magnet 104 and the substrate W based on the retrieved information. Incidentally, there are no particular limitations on the method used to retrieve the information inherent in the mask M. For example, the control unit 301 can retrieve information input by the user as the information inherent in the mask M in use.
[0066] Mask state P1 corresponds to Figure 4A The mask M is bent into a concave shape. The vertical position Zr of the mask M is lower than the vertical position of the mask frame 107. Therefore, the vertical position Zr of the mask M becomes a negative vertical position Zr1. The concave shape of the mask M causes upward stress to act on the mask M. Figure 4A In the state P1, the downward gravity acting on the mask M is well balanced with the upward stress acting on the mask M due to its deformation. Therefore, in mask state P1, the resultant force Fr becomes 0 (zero).
[0067] When the state of film-forming device 1 changes from Figure 4A The state changed to Figure 4BIn the first position, the permanent magnet 104 is lowered, and an upward magnetic force Fm1 is applied from the permanent magnet 104 to the mask M. Therefore, the mask M bends into an upward convex shape. This upward convex shape causes a downward stress to act on the mask M, and the gravity acting on the mask M is also a downward force. Therefore, the resultant force Fr of the stress and gravity becomes a downward force. Then, the mask state P becomes a stable mask state P2 where the upward magnetic force Fm1 equals the downward resultant force Fr. In mask state P2, the vertical position Zr of the mask M becomes the positive vertical position Zr2.
[0068] Even if the state of film-forming device 1 changes from Figure 4B The state changes to Figure 4C In this state, the vertical position Zr of mask M will not change from the vertical position Zr2. Figure 4C In this state, the substrate W has been reduced to Figure 5 The vertical position shown is Zal1. The space between the substrate W and the mask M (Zal1-Zr2) is preferably used for imaging using the alignment observation instrument 106.
[0069] When the state of film-forming device 1 changes from Figure 4C The state changes to Figure 4D In the mask state P2, the vertical position of the permanent magnet 104 remains unchanged. Therefore, the magnetic force Fm1 remains unchanged. However, the substrate W is lowered to the vertical position Zr3. The vertical position Zr3 is lower than the mask state P2. Figure 4C The mask M is in a vertical position Zr2 under the condition of [state P]. For this purpose, the substrate W contacts the mask M, and the vertical position Zr of the mask M is lowered to a vertical position Zr3. At the vertical position Zr3, the resultant force Fr (downward force) of the stress and gravity acting on the mask M becomes less than the magnetic force Fm1 (upward force) acting on the mask M. However, the substrate W is pressed against the mask M. As a result, a downward force equal to the difference between the resultant force Fr and the magnetic force Fm1 (arrow 501) acts from the substrate W onto the mask M. Therefore, the mask state P becomes stable in the mask state P3.
[0070] When the state of film-forming device 1 changes from Figure 4D The state changes to Figure 4E When in the first position, the permanent magnet 104 is lowered to the second position, thereby applying an upward magnetic force Fm2 from the permanent magnet 104 to the mask M. The magnetic force Fm2 is greater than the magnetic force Fm1. For this reason, the mask M presses against the substrate W with a force greater than that shown by arrow 501 (the force shown by arrow 502), so that the mask state P becomes stable in the mask state P4.
[0071] As described above, according to the first embodiment, the mask M is held in a convex shape bent with a first curvature, and the substrate W is brought closer to and in contact with the mask M. Through this process, the mask M and the substrate W can be brought into contact with each other from the center portion of the mask M outward with good reproducibility, and the generation of wrinkles in the mask M can be suppressed, etc., so that the mask M and the substrate W can be in contact with each other.
[0072] Incidentally, the control method for the permanent magnet 104 is not particularly limited. For example, the correspondence between the vertical position of the mask M and the vertical position of the permanent magnet 104 can be predetermined by measurement or the like. Then, based on this correspondence, the vertical position of the permanent magnet 104 corresponding to the target vertical position of the mask M is determined. Therefore, the vertical position of the permanent magnet 104 can be controlled to the determined vertical position. The permanent magnet 104 can be controlled based on the space detected by the gap sensor 110 (the space between the substrate W and the mask M). When the vertical position of the substrate W is constant, the space detected by the gap sensor 110 (the space between the substrate W and the mask M) corresponds to the vertical position of the mask M. Therefore, when the space detected by the gap sensor 110 is regarded as the vertical position of the mask M, the vertical position of the permanent magnet 104 can be controlled while confirming the space detected by the gap sensor 110, so that the vertical position of the mask M can be changed to the target vertical position.
[0073] Furthermore, an example of lifting the mask M using a permanent magnet 104 has been described. However, an electromagnet can be used instead of the permanent magnet 104. When using an electromagnet, the magnetic force applied to the mask M can be increased or decreased by increasing or decreasing the current supplied to the electromagnet. For this purpose, the position of the electromagnet can be fixed. When using an electromagnet, it is only important to control at least one of the current supplied to the electromagnet and the position of the electromagnet. Furthermore, multiple magnets (permanent magnet 104 or electromagnet) can be used as magnets (permanent magnet 104 or electromagnet) for raising the mask M. In this case, the magnetic force applied to the mask M can be individually controlled by controlling the vertical position and current of each magnet.
[0074] Furthermore, the following process is also acceptable: detecting the magnitude of the force received by the movable element 101; and detecting the contact pressure between the mask M and the substrate W based on the force received by the movable element 101; therefore, controlling the vertical position of the substrate W, the vertical position of the permanent magnet 104, etc., based on the detected contact pressure. For example, the movable element control unit 303 controls the current value of the stator 103 based on the position / attitude information output from the position / attitude sensor group 306 to maintain the position and attitude of the movable element 101 constant. By controlling the current value of the stator 103, the electromagnetic force acting on the magnet 102 disposed at the movable element 101 is controlled. The electromagnetic force acting on the magnet 102 while the position and attitude of the movable element 101 remain constant is well balanced with other forces received by the movable element 101. For this purpose, the movable element control unit 303 or the control unit 301 can detect the magnitude of the force received by the movable element 101 (other than the electromagnetic force acting on the magnet 102) from the current value of the stator 103. Then, when the mask M and the substrate W come into contact with each other, the position and orientation of the movable element 101 change. To this end, the movable element control unit 303 controls (changes) the current value of the stator 103 to maintain a constant position and orientation of the movable element 101. As a result, the electromagnetic force acting on the magnet 102 also changes. The amount of change in electromagnetic force corresponds to the contact pressure between the mask M and the substrate W. Therefore, the movable element control unit 303 or the control unit 301 can detect the contact pressure between the mask M and the substrate W based on the amount of change in the current value of the stator 103.
[0075] Second embodiment
[0076] The second embodiment will be described. Incidentally, although the differences from the first embodiment (construction and processing) will be described in detail, the similarities with the first embodiment will be omitted as appropriate.
[0077] Figures 6A to 6F All are cross-sectional views illustrating the operation of the film-forming apparatus 1 used to perform film formation. Figure 6A Corresponding to Figure 4A , Figures 6C to 6F Corresponding to Figures 4B to 4E In other words, in the second embodiment, in addition to the state of the first embodiment, the following is also adopted: Figure 6B The state.
[0078] First, the permanent magnet 104 is reduced to a lower value than... Figure 6C The vertical position is lower than the vertical position, so that the state of the film forming device 1 changes from the vertical position. Figure 6A The state transition to Figure 6B The state of the mask M. In this step, the mask M is bent into a concave shape away from the substrate W. Figure 6A The mask M is bent into a convex shape to get closer to the substrate W. Figure 6B).exist Figure 6B In this state, the vertical position of the permanent magnet 104 is lower than Figure 6C The vertical position within. Therefore, the magnetic force (the force that lifts the mask M) applied from the permanent magnet 104 to the mask M is greater than... Figure 6C The magnetic force within. Therefore... Figure 6B The curvature (second curvature) of the mask M in the middle is greater than Figure 6C The curvature (first curvature) of the mask M in the image.
[0079] Then, the permanent magnet 104 is lifted, and the state of the film forming device 1 changes from... Figure 6B The state changes to Figure 6C The state. Subsequently, as in the first embodiment, the film-forming apparatus 1 from Figure 6C The state changed to Figure 6D state, from Figure 6D The state changed to Figure 6E The state, and from Figure 6E The state changed to Figure 6F The state.
[0080] Figure 7 This schematically illustrates the state of mask M from Figures 6A to 6F The curve of the transformation. Figure 7 The vertical and horizontal axes are Figure 5 The same. Magnetic force Fm3 is the magnetic force Fm when the vertical position of the permanent magnet 104 is a third position that is lower than the first position and higher than the second position, and it is greater than magnetic force Fm1 and less than magnetic force Fm2. Magnetic force Fm3 is... Figure 6B The magnetic force Fm is applied from the permanent magnet 104 to the mask M in the state of [condition]. Figure 7 The mask state P1' corresponds to Figure 6B The state.
[0081] In the first embodiment, the mask state P transitions from mask state P1 to mask state P2. On the other hand, in the second embodiment, the mask state P transitions from mask state P1 to mask state P1', and then from mask state P1' to mask state P2.
[0082] Depending on the type of mask M, the mask M can deform sensitively according to internal stress. Before transitioning from mask state P to mask state P2, a transition to mask state P1', in which the curvature of the mask is greater than that in mask state P2, is achieved. As a result, the internal stress of the mask M can be mitigated, making it difficult for wrinkles or the like to form in the mask M. Furthermore, undesirable deformation of the mask M (deformation that leads to wrinkles or the like) can be suppressed. For this purpose, the alignment accuracy between the substrate W and the mask M can also be improved. The control in the second embodiment is preferred for cases where internal stress hysteresis occurs in the mask M. The mitigation of internal stress also includes the homogenization of internal stress.
[0083] Incidentally, even if the magnetic force applied to the mask M by the permanent magnet 104 is the same, the vertical position of the mask M after being lifted by the permanent magnet 104 varies depending on the internal stress of the mask M. Therefore, the vertical position Zr2 of the mask M in mask state P2 is not necessarily the same in the first embodiment and the second embodiment. By increasing or decreasing the curvature of the mask M, the internal stress of the mask M can be mitigated, which can reduce the variation in the vertical position of the mask M.
[0084] Furthermore, the permanent magnet 104 can be repeatedly raised and lowered, thereby repeatedly increasing and decreasing the curvature of the mask M. Through this process, the internal stress of the mask M can be further mitigated.
[0085] Third Embodiment
[0086] The third embodiment will be described. Incidentally, although the differences from the first embodiment (construction and processing) will be described in detail, the similarities with the first embodiment will be omitted as appropriate.
[0087] Figure 8 It is a schematic diagram showing the state transition of mask M. Figure 8 The vertical and horizontal axes are Figure 5 The same applies to the first embodiment. In the third embodiment, as in the first embodiment, mask state P transitions from mask state P1 to mask state P2. However, in the third embodiment, after transitioning to mask state P2, the substrate W is lowered to a vertical position Zal2. Vertical position Zal2 is lower than vertical position Zr2. For this purpose, mask M is also lowered to a vertical position Zal2, and mask state P transitions from mask state P2 to mask state P2'. In mask state P2', the contact pressure between mask M and substrate W (corresponding to the frictional force between substrate W and mask M) is sufficiently small, such that mask M is slidable relative to substrate W.
[0088] When the mask M is in contact with the substrate W, the substrate W receives frictional force from the mask M. This frictional force can attenuate (damp) the vibration of the substrate W. In addition, the frictional force can reduce the amplitude of the substrate W during movement. This effect is significantly demonstrated when the movable element 101 moves in a non-contact manner.
[0089] Then, when the mask M is in contact with the substrate W, the wobble of the substrate W is reduced. This allows for high-precision alignment between the substrate W and the mask M. However, friction between the substrate W and the mask M can cause wrinkles or the like in the mask M. Therefore, the friction is preferably small enough to allow the mask M to slide relative to the substrate W.
[0090] Furthermore, in the configuration where a servo motor (including a linear servo motor) moves the substrate W, the gain of the servo motor can be adjusted while the mask M is in contact with the substrate W. For example, zero-torque control of the servo motor can be achieved through gain adjustment. With zero-torque control, the contact pressure between the mask M and the substrate W is high. When the mask M does not slide relative to the substrate W, the servo motor is controlled (driven) so that the torque applied to the output shaft of the servo motor becomes essentially zero.
[0091] After alignment and gain adjustment, as in the first embodiment, the substrate W is lowered to the vertical position Zr3, and the mask state P changes to mask state P3. Then, the permanent magnet 104 is lowered, thereby realizing the transition of mask state P from mask state P3 to mask state P4.
[0092] Fourth embodiment
[0093] The fourth embodiment will be described. Incidentally, although the differences from the first embodiment (construction and processing) will be described in detail, the similarities with the first embodiment will be omitted as appropriate.
[0094] Figure 9 It is a schematic diagram showing the state transition of mask M. Figure 9 The vertical and horizontal axes are Figure 5 The same applies. In the fourth embodiment, the mask M is fixed to the mask frame 107 without being subjected to large tension. In this case, near the origin (zero position) of the vertical position Zr of the mask M, the resultant force Fr acting on the mask M varies non-linearly with respect to the vertical position Zr of the mask M.
[0095] Here, it is assumed that mask state P11 corresponds to a state where the magnetic force Fm applied to mask M is sufficiently small (including the state where the magnetic force Fm is not applied to mask M), and it is assumed that the vertical position Zr of mask M, preferably used for aligning substrate W and mask M, is vertical position Zal3. As the magnetic force Fm5 is applied to mask M, mask state P becomes stable at mask state P13, and the vertical position Zr of mask M becomes stable at vertical position Zal3. However, when the magnetic force Fm5 is applied to mask M, mask state P may not transition to mask state P13, but may instead transition to mask state P14 or mask state P15, resulting in a stable mask state P.
[0096] In this case, in the fourth embodiment, similar to the second and third embodiments, a magnetic force Fm4 greater than Fm5 is applied to the mask M before applying the magnetic force Fm5, thereby achieving the transition of mask state P from mask state P11 to mask state P12. Subsequently, the magnetic force Fm applied to the mask M is reduced from magnetic force Fm4 to magnetic force Fm5. Through this process, the transition of mask state P to mask state P13 can be achieved.
[0097] Fifth embodiment
[0098] The fifth embodiment will be described. Incidentally, although the differences from the first embodiment (construction and processing) will be described in detail, the similarities with the first embodiment will be omitted as appropriate.
[0099] Figure 10 This is a longitudinal cross-sectional view of film-forming equipment 1. (For example...) Figure 10 As shown, in the fifth embodiment, the substrate W is smaller than the mask M. The mask frame 107 holds the mask M at a mask holding position 1001 located outside the end 1002 of the substrate W. In this case, after the substrate W contacts the mask M, the substrate W preferably moves to the mask holding position 1001, or moves to a position beyond the mask holding position 1001 (a position below the mask holding position 1001). This process improves the adhesion between the substrate W and the mask M.
[0100] Incidentally, the first to fifth embodiments are merely examples. Constructions obtained by appropriately modifying or altering the construction of the first to fifth embodiments within the scope of the present invention are also included in the present invention. Constructions obtained by appropriately combining the constructions of the first to fifth embodiments are also included in the present invention.
[0101] Other embodiments
[0102] Embodiments of the present invention can also be implemented by providing software (programs) that perform the functions of the above embodiments to a system or device via a network or various storage media, and the computer or central processing unit (CPU) or microprocessor unit (MPU) of the system or device reads and executes the program.
[0103] According to the present invention, the substrate and the mask can be made to contact each other with good reproducibility.
[0104] Although this disclosure has been described with reference to exemplary embodiments, it should be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the appended claims should be given the broadest interpretation to cover all such modifications and equivalent structures and functions.
Claims
1. A film-forming apparatus configured to form a film-forming material on a substrate via a mask, the film-forming apparatus comprising: A substrate holding component, configured to hold the substrate; A mask holding member is configured to hold a mask such that the mask is opposite to a substrate held on a substrate holding member; A magnetic force generating component is configured to generate magnetic force to bend a mask held on a mask holding component into a convex shape toward a substrate held on a substrate holding component. and The control component is configured to control a substrate holding component and a magnetic force generating component. Among them, the control components: The magnetic force generating component is controlled to cause the mask to bend at a first curvature, and The control substrate holding component causes the substrate to move closer to and contact the mask while the mask is held bent at a first curvature.
2. The film-forming equipment according to claim 1, in, The control unit controls the magnetic force generating unit, causing the mask to bend with the first curvature after bending with a second curvature greater than the first curvature.
3. The film-forming equipment according to claim 2, in, The control unit controls the magnetic force generating unit, so that the increase and decrease of the mask curvature are repeated multiple times before the mask bends at the first curvature.
4. The film-forming apparatus according to any one of claims 1 to 3, further comprising a sensor configured to detect the space between a substrate held on a substrate holding member and a mask held on a mask holding member. in, The control unit controls the magnetic force generating unit based on the space detected by the sensor.
5. The film-forming apparatus according to any one of claims 1 to 3, in, The control component controls at least one of the substrate holding component and the magnetic force generating component, such that after the substrate contacts the mask, the mask and the substrate are in close contact, and With the mask in close contact with the substrate, the film-forming material is formed on the substrate through the mask.
6. The film-forming equipment according to claim 5, in, The control component controls the substrate holding component so that after the substrate contacts the mask, the substrate moves toward the mask side, and The magnetic force generating component is controlled to increase the magnetic force applied to the mask.
7. The film-forming equipment according to claim 5, in, The mask holding component is configured to hold the ends of the mask. The substrate is smaller than the mask, and The control component controls the substrate holding component such that, after the substrate comes into contact with the mask, the substrate moves to a mask holding position in which the mask holding component holds the mask, or moves to a position beyond the mask holding position.
8. The film-forming apparatus according to any one of claims 1 to 3, in, The control unit performs gain adjustment of the substrate holding unit while the substrate and mask are in contact.
9. The film-forming equipment according to claim 8, in, The control unit performs gain adjustment in order to enable zero torque control of the substrate holding unit.
10. The film-forming apparatus according to any one of claims 1 to 3, in, Alignment between the substrate and the mask is performed while the substrate and the mask are in contact.
11. The film-forming apparatus according to claim 10, in, Alignment between the substrate and the mask is performed while the mask can slide relative to the substrate.
12. The film-forming apparatus according to any one of claims 1 to 3, in, The control unit acquires information inherent in the mask and controls the magnetic force generating unit based on the information.
13. The film-forming apparatus according to any one of claims 1 to 3, in, The state in which the mask is bent at a first curvature is the state in which a specific magnetic force is applied to the mask by the magnetic force generating component.
14. The film-forming apparatus according to any one of claims 1 to 3, in, The control component bends the mask at a first curvature by bringing the magnetic force generating component closer to the mask until a specific position is reached.
15. A film-forming apparatus configured to form a film-forming material on a substrate via a mask, the film-forming apparatus comprising: A substrate holding component, configured to hold the substrate; A mask holding member is configured to hold a mask such that the mask is opposite to a substrate held on a substrate holding member; A magnetic force generating component is configured to generate magnetic force to bend a mask held on a mask holding component into a convex shape toward a substrate held on a substrate holding component. and The control component is configured to control a substrate holding component and a magnetic force generating component. Among them, the control components: Control the magnetic force generating component so that a specific magnetic force is applied to the mask, and The control substrate holding component allows the substrate to move closer to and contact the mask when a specific magnetic force is applied to it.
16. The film-forming apparatus according to claim 15, in, The control unit applies a specific magnetic force to the mask by bringing the magnetic force generating component closer to the mask until a specific position is reached.
17. A method for forming a film, comprising: Hold the substrate on the substrate holding component; Hold the mask on the mask holding member such that the mask is opposite to the substrate held on the substrate holding member; The magnetic force generating component is controlled such that the mask held on the mask holding component is bent into a convex shape with a first curvature towards the substrate held on the substrate holding component under the action of the magnetic force generated by the magnetic force generating component; The substrate holding component is controlled to bring the substrate closer to the mask while the mask is held bent at a first curvature. Alignment between the substrate and the mask is performed after the substrate is brought closer to the mask. Controlling at least one of the substrate holding component and the magnetic force generating component, such that after alignment, the mask is in close contact with the substrate; and Film-forming material is formed on the substrate through the mask while the mask and the substrate are in close contact.
18. A method for forming a film, comprising: Hold the substrate on the substrate holding component; Hold the mask on the mask holding member such that the mask is opposite to the substrate held on the substrate holding member; The magnetic force generating component is controlled to generate a magnetic force, such that a specific magnetic force generated by the magnetic force generating component is applied to the mask, and the mask held on the mask holding component is bent into a convex shape toward the substrate held on the substrate holding component; The substrate holding component is controlled to bring the substrate closer to the mask when a specific magnetic force is applied to it. Alignment between the substrate and the mask is performed after the substrate is brought closer to the mask. Controlling at least one of the substrate holding component and the magnetic force generating component, such that after alignment, the mask is in close contact with the substrate; and Film-forming material is formed on the substrate through the mask while the mask is in close contact with the substrate.
19. A method of manufacturing an article, the article comprising a substrate and a film-forming material film formed on the substrate, the method comprising: Hold the substrate on the substrate holding component; Hold the mask on the mask holding member such that the mask is opposite to the substrate held on the substrate holding member; The magnetic force generating component is controlled such that the mask held on the mask holding component is bent into a convex shape with a first curvature towards the substrate held on the substrate holding component under the action of the magnetic force generated by the magnetic force generating component; The substrate holding component is controlled to bring the substrate closer to the mask while the mask is held bent at a first curvature. After bringing the substrate closer to the mask, alignment between the substrate and the mask is performed. Controlling at least one of the substrate holding component and the magnetic force generating component, such that after alignment, the mask is in close contact with the substrate; and Film-forming material is formed on the substrate through the mask while the mask is in close contact with the substrate.
20. A method of manufacturing an article, the article comprising a substrate and a film-forming material film formed on the substrate, the method comprising: Hold the substrate on the substrate holding component; Hold the mask on the mask holding member such that the mask is opposite to the substrate held on the substrate holding member; The magnetic force generating component is controlled to generate a magnetic force, such that a specific magnetic force generated by the magnetic force generating component is applied to the mask, and the mask held on the mask holding component is bent into a convex shape toward the substrate held on the substrate holding component; The substrate holding component is controlled to bring the substrate closer to the mask when a specific magnetic force is applied to it. Alignment between the substrate and the mask is performed after the substrate is brought closer to the mask. Controlling at least one of the substrate holding component and the magnetic force generating component, such that after alignment, the mask is in close contact with the substrate; and Film-forming material is formed on the substrate through the mask while the mask is in close contact with the substrate.
Citation Information
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