Semiconductor device failure detection method

Abstract

The application discloses a semiconductor device failure detection method, and the semiconductor device comprises an interference component covering foreign matters on the outside, and comprises the following steps: preparing a light source capable of emitting light penetrating the interference component, and irradiating the interference component by the light source; if an interference image is observed, locating a target area corresponding to the foreign matter on the interference component through the interference image; and detecting the foreign matter based on the located target area. The semiconductor device failure detection method of the embodiment of the application can locate the foreign matter, so that the detection personnel only need to detect in a smaller range, and the detection efficiency and success rate can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of failure detection of semiconductor devices, and in particular to a failure detection method of semiconductor devices. BACKGROUND

[0002] When a semiconductor device has a dysfunction, it is necessary to detect the failure of the semiconductor device to determine the failure cause. At present, the common failure detection method includes searching for the failure site through a metallographic microscope or a scanning electron microscope. Then, in the actual detection scene, the size of the failure site may be extremely small, and the conventional detection means has the problems of low detection efficiency and low success rate. SUMMARY

[0003] The present application aims to at least solve one of the technical problems existing in the prior art. To this end, the present application provides a failure detection method of semiconductor devices, which can narrow the detection range and improve the detection efficiency and success rate.

[0004] According to the failure detection method of semiconductor devices of the first embodiment of the present application, the semiconductor device includes an interference component covering the outside of the foreign matter, and the method includes the following steps:

[0005] Preparation of a light source capable of emitting light penetrating the interference component, and irradiation of the interference component by the light source;

[0006] If an interference image is observed, a target area corresponding to the foreign matter is located on the interference component through the interference image;

[0007] Detection of the foreign matter based on the located target area.

[0008] According to the failure detection method of semiconductor devices of the first embodiment of the present application, at least the following beneficial effects are achieved:

[0009] The failure detection method of semiconductor devices of the present application can locate the foreign matter, so that the detection personnel only need to detect in a smaller range, which can improve the detection efficiency and success rate.

[0010] In other embodiments of the present application, the step of locating the target area through the interference image includes identifying a feature mark on the interference image, and taking the area corresponding to the feature mark as the target area.

[0011] In other embodiments of the present application, the interference image includes a plurality of concentric and alternating ring-shaped bright lines and ring-shaped dark lines, the feature mark includes the center of each ring-shaped bright line and each ring-shaped dark line, and the target area includes the center area of each ring-shaped bright line and each ring-shaped dark line.

[0012] In other embodiments of the present application, the step of detecting the foreign matter based on the located target region comprises:

[0013] cutting the interference component based on the located target region to expose the foreign matter;

[0014] detecting the exposed foreign matter.

[0015] In other embodiments of the present application, the step of cutting the interference component comprises:

[0016] cutting part of the interference component in the thickness direction on one side of the foreign matter to form an observation slot through the interference component, and exposing the foreign matter through the observation slot;

[0017] detecting the foreign matter from the observation slot.

[0018] In other embodiments of the present application, the step of forming the observation slot comprises:

[0019] cutting part of the interference component in the thickness direction on one side of the foreign matter to form a cutting slot;

[0020] After one cutting is completed, observing the slot wall of the cutting slot on the side of the foreign matter, if the foreign matter is not exposed, continuing to cut part of the interference component to extend the cutting slot towards the foreign matter, and repeating the above steps until the observation slot is formed.

[0021] In other embodiments of the present application, the semiconductor device further comprises a housing, a silicon substrate, and a back electrode plate, the interference component comprises a silicon diaphragm, the housing is provided with a first through hole, the silicon substrate is connected to the inner wall of the housing and is provided with a second through hole corresponding to the first through hole, the silicon diaphragm and the back electrode plate are both connected to the side of the silicon substrate away from the inner wall, the silicon diaphragm and the back electrode plate form a capacitor structure, the silicon diaphragm comprises a main body portion and a connecting portion provided on the outer periphery of the main body portion, the connecting portion is connected to the silicon substrate, the main body portion covers the second through hole, and a gap capable of communicating the second through hole can be formed between the main body portion and the edge of the second through hole;

[0022] The semiconductor device failure detection method comprises the following steps:

[0023] irradiating the silicon diaphragm with an infrared light source;

[0024] if an interference image is observed, locating a target region on the silicon diaphragm through the interference image;

[0025] cutting the silicon diaphragm based on the located target region to expose the foreign matter;

[0026] detecting the foreign matter after exposure.

[0027] In other embodiments of the present application, the light source is an infrared light source of an infrared microscope, and the semiconductor device failure detection method includes the steps of: irradiating the silicon vibrating diaphragm with the infrared light source, and observing an interference image by the infrared microscope.

[0028] In other embodiments of the present application, the light source is an infrared light source, and the infrared light source emits infrared light with a wavelength range of 0.75 μm to 2.5 μm.

[0029] In other embodiments of the present application, the interference member has a thickness of 1 μm to 10 μm.

[0030] Additional aspects and advantages of the present application will be given, in part, in the following description, become apparent from the following description, or be learned by practice of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0031] The present application will be further described with reference to the drawings and examples, wherein:

[0032] Figure 1 A schematic diagram of irradiating an interference member with a light source in an embodiment of the present application;

[0033] Figure 2 A schematic diagram of an interference image formed after the light source irradiates the interference member in an embodiment of the present application;

[0034] Figure 3 A schematic diagram of removing an interference member in an embodiment of the present application;

[0035] Figure 4 A top view of forming a cut groove by removing part of a material on an interference member in an embodiment of the present application;

[0036] Figure 5 A schematic diagram of a cross section of a microphone chip suitable for a semiconductor device failure detection method in an embodiment of the present application;

[0037] Figure 6 A schematic diagram of a cross section of a microphone chip suitable for a semiconductor device failure detection method in an embodiment of the present application; Figure 5 A schematic diagram of a cross section of a microphone chip suitable for a semiconductor device failure detection method in an embodiment of the present application;

[0038] Figure 7 A physical diagram of an interference image formed after the light source irradiates the interference member in an embodiment of the present application;

[0039] Figure 8 A schematic diagram of a cross section of a microphone chip suitable for a semiconductor device failure detection method in an embodiment of the present application;

[0040] REFERENCE NUMERALS:

[0041] Interference member 100, observation groove 110, groove wall 120, cut groove 130, main body portion 140, connection portion 150;

[0042] Light source 200;

[0043] Housing 300, first through-hole 310;

[0044] Silicon substrate 400, second through-hole 410;

[0045] Back electrode plate 500;

[0046] Foreign matter 600;

[0047] Interference image A, target region B, annular bright line C, annular dark line D. DETAILED DESCRIPTION

[0048] Embodiments of the present application will be described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the accompanying drawings are exemplary, only for explaining the present application, and cannot be understood as a limitation of the present application.

[0049] In the description of the present application, it is to be understood that the orientation description, such as the orientation or position relationship indicated by the upper, lower, front, rear, left, right, etc. is based on the orientation or position relationship shown in the drawings, only for the purpose of facilitating the description of the present application and simplifying the description, and is not intended to indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0050] In the description of the present application, if the meaning of several is more than one, the meaning of multiple is more than two, greater than, less than, more than, etc. is not included in the number, above, below, etc. is included in the number. If it is described as first, second, only for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features or implicitly indicating the order of indicated technical features.

[0051] In the description of the present application, unless otherwise explicitly limited, the words such as setting, installing, connecting, etc. should be broadly understood, and the person skilled in the art can reasonably determine the specific meaning of the above words in the present application in combination with the specific content of the technical solution.

[0052] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "illustrative embodiment", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in one or more embodiments or examples.

[0053] It is a common practice to find inclusions in a semiconductor device by metallographic microscope or scanning electron microscope. Since the specific position of the inclusions is not known by the detector before detection, random detection is required in a large range, resulting in a time-consuming detection method with low detection efficiency. When the size of the inclusions is extremely small, the detection efficiency will be further affected, and even the situation of undetectable may occur. The present application provides a semiconductor device failure detection method, which can locate the inclusions by using interference images, thereby reducing the detection range and improving the detection efficiency and success rate.

[0054] The semiconductor device failure detection method in the embodiment of the present application is applicable to a semiconductor device whose outer side of inclusions is covered with an interference component 100. Referring to Figure 1 , the semiconductor device failure detection method comprises the following steps:

[0055] S100 prepares a light source 200. The light emitted by the light source 200 can penetrate the interference component 100, that is, the interference component 100 is transparent to the light source 200. According to the difference of the material of the interference component 100, the light source 200 needs to be selected as a corresponding penetrable light source. For example, when the interference component 100 is a silicon or silicide material, the light source 200 is selected as an infrared light source.

[0056] When the above-mentioned light source 200 irradiates the interference component 100, if there is an inclusion under the semiconductor device, the shape of the interference component 100 will change, for example, a convex part is formed as shown in the figure, then the interference component 100 will generate an interference image based on the interference principle.

[0057] S200 uses a corresponding observation device to observe the semiconductor device. When the interference image is observed, the target area on the interference component 100 is further located by the interference image. Specifically, within the field of view of the observation device, the interference image and the interference component 100 can be observed at the same time. Since the interference image is generated based on the deformed part of the interference component 100, the target area corresponding to the inclusion can be located on the interference component 100 by the interference image.

[0058] It should be noted that the shape and area of the target region are not limited in the embodiment, and the target region is not more than the whole visible region of the interference image, that is, the target region can be the whole visible region of the interference image or a part of the whole visible region. The aforementioned "the target region corresponds to the foreign matter" should be understood as taking the target region as a reference for detecting the foreign matter, so as to reduce the range for searching the foreign matter.

[0059] It should be further noted that in some specific embodiments, a physically visible boundary can be formed on the interference component 100 by a known marking method, so as to mark a physically visible target region, and in other specific embodiments, the target region can also be a virtual region.

[0060] S300, after the target region is positioned on the interference component 100, the foreign matter is detected by the detection device based on the guidance of the target region. According to the difference between the detection device and the structure of the semiconductor device, the embodiment has different detection methods. For example, when the detection device can penetrate the interference component 100 for observation and can distinguish the foreign matter from the observed image, the detection device can be directly used for detection. When the detection device cannot penetrate the interference component 100 or cannot distinguish the foreign matter from the observed image due to the complexity of the structure of the semiconductor device or the small size of the foreign matter, part of the interference component 100 can be removed to expose the foreign matter, and then the exposed foreign matter is detected by the detection device.

[0061] Based on the above, the semiconductor device failure detection method of the embodiment can position the foreign matter, so that the detection personnel only need to detect in a smaller range, which can improve the detection efficiency and the detection success rate. In addition, it should be noted that the interference component 100 is a component of the semiconductor device itself, that is, the embodiment utilizes the structure of the semiconductor device itself to generate the interference image, without the need for additional auxiliary detection components, so the structure is simple and easy to implement.

[0062] In some embodiments, the step of positioning the target region by the interference image comprises: identifying a feature mark on the interference image, and identifying a region corresponding to the feature mark as the target region. In the foregoing embodiment, the whole visible region of the interference image can be taken as the target region as a whole. However, although the whole visible region of the interference image is smaller than the whole semiconductor device, the area is usually large, and it still takes a lot of time to detect the foreign matter in the region. The embodiment further identifies a feature mark in the interference image, and takes a region corresponding to the feature mark as the target region, so as to further reduce the range.

[0063] Reference Figure 1 , Figure 2, the interference image is an isoclinic interference image formed by a thin film interference principle. In this embodiment, the interference component 100 is a thin film structure, and the granular impurities 600 are located below the thin film structure. The impurities 600 cause the interference component 100 to be lifted to form a raised portion. When the light emitted by the light source 200 irradiates the upper surface of the raised portion, part of the light is reflected by the upper surface of the raised portion, and part of the light enters the raised portion and is reflected by the lower surface of the raised portion. When the optical path difference of the two parts of reflected light meets the set condition, an interference image is generated. Specifically, the interference image A in this embodiment includes a plurality of concentric and alternately arranged annular bright lines C and annular dark lines D. It should be noted that, in an ideal case, the annular bright lines C and the annular dark lines D formed by isoclinic interference are both standard and closed circular rings. However, in actual detection, the annular bright lines C and the annular dark lines D can not be standard circular rings, or the visible parts of the annular bright lines C and the annular dark lines D cannot form a closed annular structure, due to factors such as the position of the impurities and the deformed shape of the interference component 100. However, even in the above-mentioned cases, it can still be identified that the annular bright lines C and the annular dark lines D as a whole extend along an arc trajectory, so as to determine the common center of the annular bright lines C and the annular dark lines D.

[0064] Based on the foregoing, when the interference image appears as the foregoing image, the common center of each annular bright line C and each annular dark line D can be identified. Therefore, the feature mark can be selected as the common center of each annular bright line C and each annular dark line D. Correspondingly, the target region B is the center region of each annular bright line C and each annular dark line D. Obviously, compared with the entire interference image, the target region B is significantly reduced. In this embodiment, the target region B is a circular region (represented by a dashed line in the figure) with the foregoing center as the center. Figure 2

[0065] In some embodiments, if the detection device cannot observe the impurities at the bottom through the interference component 100, or although the detection device can penetrate the interference component 100, but due to reasons such as image layering and small size of the impurities, the impurities cannot be clearly identified. In this case, the interference component 100 can be cut based on the located target region to expose the impurities, and then the exposed impurities are detected, so as to remove the interference of the interference component 100 to observation, thereby clearly identifying the impurities.

[0066] Specifically, the interference component 100 can be removed by a FIB system (Focused Ion beam) device. Further, the FIB system can be a double-beam focused ion beam microscope system, which can not only remove the interference component 100, but also detect the impurities.

[0067] ​The thickness of the interference component 100 is small, and the deformation degree of the interference component 100 is difficult to control, so that the interference component 100 above the foreign matter is directly removed along the thickness direction, and the foreign matter is easily completely destroyed due to excessive cutting, which causes that the failure reason cannot be found out. Based on this, the embodiment of the present application also provides a removal method, which can cut from the side to avoid completely destroying the foreign matter, and the removal method is described with reference to Figure 3 , Figure 4 The embodiment of the present application does not directly remove the interference component 100 above the foreign matter, but cuts part of the interference component 100 along the thickness direction on one side of the foreign matter, so as to form an observation groove 110 penetrating through the interference component 100. The observation groove 110 is communicated to the cavity with the foreign matter, so that the foreign matter can be detected through the observation groove 110.

[0068] On the basis of cutting from the side, the embodiment of the present application also provides a step-by-step cutting method. In order to avoid completely destroying the foreign matter, part of the interference component 100 is cut along the thickness direction on the side relatively far away from the foreign matter to form a cutting groove 130. After completing the cutting once, the groove wall 120 on the side of the foreign matter of the cutting groove 130 is observed, and it is judged whether the foreign matter has been exposed from the groove wall 120. If the foreign matter has been exposed, the cutting is completed. If the foreign matter has not been exposed, the interference component 100 is continuously cut in the direction of the foreign matter, so that the cutting groove 130 extends towards the foreign matter. The above steps are repeated until the cutting groove 130 is communicated to the cavity with the foreign matter to form the observation groove 110.

[0069] It should be noted that in order to make the foreign matter appear on the cutting surface, the width of the observation groove 110 should be greater than the width of the target area B, and the central axis parallel to the length direction of the observation groove 110 passes through the center of the target area B, and the target area B is a circular shape, the width of the observation groove 110 is greater than the diameter of the target area B, and the horizontal central axis of the observation groove 110 passes through the center of the target area B. Figure 4

[0070] The semiconductor device failure detection method of the present application will be described in detail below in combination with a MEMS microphone chip. First, the structure of the MEMS microphone chip is introduced as follows Figure 5 , Figure 6 As shown in the figure, the MEMS microphone chip includes an interference component 100, a shell 300, a silicon substrate 400 and a back electrode plate 500, etc. The interference component 100, the silicon substrate 400 and the back electrode plate 500 are all arranged in the shell 300. One side of the shell 300 has a first through hole 310 communicated to the outside. For example, the first through hole 310 is arranged on the lower shell wall of the shell 300. It should be noted that the shell 300 needs to be removed during detection. Specifically, the shell 300 is a split structure including an upper cover and a bottom plate. The upper cover and the bottom plate are connected to jointly form a mounting cavity. The upper cover of the shell 300 is removed during detection to expose the internal structure of the chip.​

[0071] The silicon substrate 400 is connected to the inner wall of one side of the housing 300, and a second through hole 410 is provided on the silicon substrate 400. The second through hole 410 is provided corresponding to the first through hole 310, and the two are connected to each other to form the sound hole of the microphone. Taking the figure as an example, the silicon substrate 400 is connected to the inner side of the lower housing wall.

[0072] In this embodiment, the interference component 100 is a silicon diaphragm. Both the silicon diaphragm and the back electrode plate 500 are connected to the side of the silicon substrate 400 facing away from the inner wall of the housing 300. The silicon diaphragm and the back electrode plate 500 together form a capacitor structure. The vibration of the silicon diaphragm can convert sound pressure into an electrical signal, thereby achieving sound-to-electricity conversion. Figure 6 As shown in the example, the silicon diaphragm includes a main body 140 and a connecting part 150. The connecting part 150 is located on the outer periphery of the main body 140. The silicon diaphragm is connected to the silicon substrate 400 through the outer connecting part 150. The main body 140 is the part of the silicon diaphragm that vibrates. It can cover the second through hole 410. There is a gap between the edge of the main body 140 and the second through hole 410, and the gap communicates with the second through hole 410.

[0073] As mentioned earlier, the gap, the second through-hole 410, and the first through-hole 310 are interconnected, and the first through-hole 310 connects to the outside. Therefore, external debris 600 (usually particulate debris) can enter the gap through the first through-hole 310 and the second through-hole 410, and get stuck between the main body 140 and the silicon substrate 400. The debris 600 will hinder the vibration of the main body 140, resulting in a decrease in microphone sensitivity. However, the aforementioned fault is difficult to detect using conventional testing methods because the debris 600 is sandwiched between the silicon diaphragm and the silicon substrate 400. Metallurgical microscopes or scanning electron microscopes cannot penetrate the silicon material, so the debris 600 cannot be observed. Although infrared microscopes can penetrate silicon material, their resolution and magnification are lower than those of metallurgical microscopes and scanning electron microscopes. The size of the debris 600 is very small (usually only a few micrometers), and the chip structure is complex, resulting in image overlap. Therefore, infrared microscopes also have difficulty observing the debris 600. Furthermore, the silicon diaphragm and the back electrode 500 form the two poles of the capacitor structure, which are open circuits under DC conditions. Common failure location methods such as OBIRCH / EMMI require the formation of a closed circuit, so failure location cannot be performed.

[0074] Unlike conventional testing methods, the semiconductor device failure detection method of this embodiment locates the impurity 600 using interference images and can remove the silicon diaphragm to expose the impurity 600, thereby solving the problem that such products cannot be detected by conventional methods. Specifically, it includes the following steps:

[0075] I. When the foreign matter 600 exists, the local part of the silicon vibrating diaphragm is lifted up by the foreign matter 600 and deformed. When the infrared light is irradiated on the deformed area, the interference image is generated.

[0076] II. The observation device capable of observing the infrared light is used to observe. If the interference image is observed, the target area is located on the silicon vibrating diaphragm by the interference image. Referring to Figure 7 , the interference image generated by the local deformation of the silicon vibrating diaphragm includes the alternating annular bright lines C and annular dark lines D. The annular bright lines C and annular dark lines D are concentrically arranged. When the interference image is observed, the central area of the interference image is taken as the target area. The visible part of the annular bright lines C and annular dark lines D can be a standard circular ring, or a non-standard annular structure. It can be a closed circular ring, or a part of the annular structure. It should be noted that even if the interference image is a non-standard annular structure as shown in, for example, Figure 7 , and the visible part of the interference image is only a part of the annular structure, the center of the interference image can still be identified. The circular area with the center as the center and the set value as the radius can locate the target area.

[0077] III. Based on the identified target area, part of the silicon vibrating diaphragm is cut off along the thickness direction of the silicon vibrating diaphragm on one side of the target area, so as to form the observation groove 110 penetrating the silicon vibrating diaphragm. The observation groove 110 is in communication with the gap accommodating the foreign matter 600, so that the foreign matter 600 can be observed through the observation groove 110. Referring to Figure 8 , the foreign matter 600 is exposed through the observation groove 110 and is in an observable state. The granular foreign matter clamped between the main body 140 and the silicon substrate 400 can be observed on the cutting surface.

[0078] Referring to the foregoing embodiments, the observation groove 110 can be formed by step-by-step cutting.

[0079] Specifically, the interference component 100 can be removed by the FIB system (Focused Ion beam) equipment. Further, the FIB system can be a double-beam focused ion beam microscope system, which can realize the removal of the interference component 100 and the detection of the foreign matter 600.

[0080] In some embodiments, the light source 200 is an infrared light source of an infrared microscope. In the present embodiment, the silicon vibrating diaphragm is irradiated by the infrared light source, and the interference image is observed by the infrared microscope. That is, the present embodiment uses the infrared light source of the infrared microscope to cooperate with the interference component 100 of the chip to form the interference image, and the interference image is observed by the infrared microscope after the interference image is formed. It is not necessary to separately set the light source and match the light source and the observation device, which is helpful to simplify the detection method.

[0081] In some embodiments, the light source 200 is an infrared light source, which can be the infrared light source of the aforementioned infrared microscope or a separate light source. In this embodiment, the infrared light source 200 emits infrared light with a wavelength range of 0.75 μm to 2.5 μm, which has good penetration effect on the silicon diaphragm.

[0082] In some embodiments, the thickness of the interference component 100 is 1 μm to 10 μm, which is conducive to the vibration of the silicon diaphragm in the microphone chip. Specifically, the thickness of the interference component 100 can be 1.5 μm, 2 μm, 2.5 μm, 3 μm, 5 μm, 9 μm, etc.

[0083] It should be noted that the formation of the interference image requires that the wavelength range of the light and the thickness of the interference component are adapted to each other. When the wavelength of the light of the infrared light source 200 is within 0.75 μm to 2.5 μm and the thickness of the interference component is within 1 μm to 10 μm. In addition to the effects of the aforementioned embodiments, the present embodiment can form an interference image that is easy to identify when there are impurities 600 in the chip.

[0084] The embodiments of the present application are described in detail above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the spirit of the present application. In addition, the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

Claims

1. A method for detecting failure of a semiconductor device including an interference member covered on the outside of a foreign matter, characterized by, The method comprises the following steps: preparing a light source capable of emitting light that can penetrate the interference component, and irradiating the interference component by the light source; observing an interference image on the interference component, identifying a feature mark on the interference image, and taking a region corresponding to the feature mark on the interference component as a target region corresponding to a foreign matter, the interference image comprising a plurality of concentric and alternating ring-shaped bright lines and ring-shaped dark lines, the feature mark comprising a center of each of the ring-shaped bright lines and the ring-shaped dark lines, and the target region comprising a center region of each of the ring-shaped bright lines and the ring-shaped dark lines; detecting the foreign matter based on the located target region.

2. The semiconductor device failure detection method according to claim 1, characterized by, The step of detecting the foreign matter based on the located target region comprises: cutting the interference component based on the located target region to expose the foreign matter; and detecting the exposed foreign matter.

3. The semiconductor device failure detection method according to claim 2, characterized by, The step of cutting the interference component comprises: cutting part of the interference component in a thickness direction on one side of the foreign matter to form an observation slot penetrating through the interference component, and exposing the foreign matter through the observation slot; and detecting the foreign matter from the observation slot.

4. The semiconductor device failure detection method according to claim 3, characterized by, The step of forming the observation slot comprises: cutting part of the interference component in a thickness direction on one side of the foreign matter to form a cutting slot; and after one cutting is completed, observing a slot wall of the cutting slot on the side toward the foreign matter, and if the foreign matter is not exposed, continuing to cut part of the interference component to extend the cutting slot toward the foreign matter, and repeating the above steps until the observation slot is formed.

5. The semiconductor device failure detection method according to claim 1, characterized by, The semiconductor device further comprises a housing, a silicon substrate, and a back electrode plate, the interference component comprises a silicon diaphragm, the housing is provided with a first through hole, the silicon substrate is connected to an inner wall of the housing and is provided with a second through hole corresponding to the first through hole, the silicon diaphragm and the back electrode plate are both connected to a side of the silicon substrate away from the inner wall, the silicon diaphragm and the back electrode plate form a capacitor structure, the silicon diaphragm comprises a main body part and a connecting part arranged at an outer periphery of the main body part, the connecting part is connected to the silicon substrate, the main body part covers the second through hole, and a gap capable of communicating the second through hole can be formed between the main body part and a rim of the second through hole. The semiconductor device failure detection method comprises the following steps: irradiating the silicon diaphragm by an infrared light source; locating a target region on the silicon diaphragm by an interference image observed; cutting the silicon diaphragm based on the located target region to expose the foreign matter; and detecting the exposed foreign matter.

6. The semiconductor device failure detection method according to claim 5, characterized by, The light source is an infrared light source of an infrared microscope, and the semiconductor device failure detection method comprises the following steps: irradiating the silicon diaphragm by the infrared light source, and observing an interference image by the infrared microscope.

7. The semiconductor device failure detection method according to claim 5, characterized by, The infrared light source emits infrared light with a wavelength ranging from 0.75 μm to 2.5 μm.

8. The semiconductor device failure detection method according to claim 5, characterized by, The thickness of the interference component ranges from 1 μm to 10 μm.

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