Lithographic apparatus and method of measuring liquid film evaporation power of a substrate surface of a lithographic apparatus

Abstract

The application provides a photolithography machine, which comprises an illumination system, a mask, a projection system, a substrate and a substrate surface liquid film evaporation power measuring device, the substrate surface liquid film evaporation power measuring device comprises a substrate bearing unit, a fluid transmission unit, a fluid flow control unit, a fluid temperature control unit and a fluid temperature measuring unit, the substrate bearing unit is used for bearing the substrate, and the substrate bearing unit is a hollow structure; the fluid transmission unit is used for feeding fluid medium into the substrate bearing unit, the fluid medium is gas, the fluid flow control unit is used for controlling and measuring the flow of the fluid medium flowing into the substrate bearing unit, and the fluid temperature measuring unit is used for measuring the temperature difference of the fluid medium flowing into and out of the substrate bearing unit. By using gas as the fluid medium, the requirements for the flow control precision and the temperature measuring precision can be obviously reduced.

Description

Technical Field

[0001] This invention relates to the field of lithography machine technology, and in particular to a lithography machine and a method for measuring the evaporation power of the liquid film on the substrate surface of the lithography machine. Background Technology

[0002] Figure 1 This is a schematic diagram of an immersion lithography machine. An illumination system 101 generates a light beam, projecting a pattern on a mask 102 onto a substrate 108 via a projection system 104. The mask 102 is supported by a mask stage 103. The substrate 108 is supported by a motion stage 107, which can move at high speed in the horizontal direction. The projection system 104 is supported by a frame 105. An immersion liquid maintenance system 106 is positioned between the projection system 104 and the motion stage 107, making water the propagation medium for the light beam in this area. When the motion stage 107 moves at high speed, the immersion liquid maintenance system 106 splits into two parts. The system ensures that the liquid does not flow out from the gap between the two parts, but it cannot prevent the dragging out of a residual liquid film of several hundred nanometers. The evaporation and cooling of the liquid film in the air causes a drop in substrate temperature, resulting in deformation. The cooling power generated by the evaporation of the residual liquid film on the substrate surface is relatively small (typically less than 5W), but even small deformations can affect the projection accuracy of the pattern. Therefore, it is necessary to measure this evaporation power to develop an appropriate temperature compensation strategy. Evaporation power itself cannot be directly measured, but temperature measurement results can be converted into the magnitude of evaporation power. The liquid film is generated when the stage moves at high speed, and the coverage area and shape of the liquid film change constantly with the motion.

[0003] Figure 2 This is a typical device for measuring evaporation power, comprising a substrate support unit 111 for supporting a substrate 108; a water inlet pipe 109 is provided within the substrate support unit 111; a first temperature sensor 110a is installed at the inlet of the water inlet pipe 109 for measuring the water temperature at the inlet; a second temperature sensor 110b is installed at the outlet of the water inlet pipe 109 for measuring the water temperature at the outlet. The substrate support unit 111 is, for example, disc-shaped, but its structure is not limited to a disc; it can be square or any other arbitrary shape, as long as it can cover the entire substrate. By measuring the temperature difference between the inlet and outlet, the evaporation power can be calculated.

[0004]

[0005] Where dQ / dt is the heat absorption power of water, in W; c is the specific heat capacity of water, 4.18 kJ / (kg·℃); ρ is the density of water; dV / dt is the flow rate of water; and ΔT is the temperature difference measured at the inlet and outlet.

[0006] When the evaporation power is constant, the water flow rate and the temperature difference measured by the sensor are inversely proportional. The higher the water flow rate, the smaller the inlet and outlet temperature difference, and the higher the required sensor measurement accuracy. Conversely, the lower the accuracy of the selected sensor, the smaller the required flow rate, and the higher the required flow control accuracy. Assuming an evaporation power of -5W, we have: (dV / dt)·ΔT=-0.072℃·L / min, where dV / dt is the water flow rate and ΔT is the inlet and outlet temperature difference. Further assuming the flow rate is controlled at 0.7L / min, the inlet and outlet temperature difference is approximately -0.1℃. Even with a relatively low measurement accuracy of 5%, high demands are placed on both flow control and temperature measurement accuracy. If the actual required evaporation power is even lower, the accuracy requirements will be further increased. Summary of the Invention

[0007] The purpose of this invention is to provide a lithography machine and a method for measuring the evaporation power of the liquid film on the substrate surface of the lithography machine, so as to solve the problem of excessively high flow control and temperature measurement accuracy required when measuring evaporation power.

[0008] To address the aforementioned technical problems, this invention provides a lithography machine, comprising an irradiation system, a mask, a projection system, a substrate, and a substrate surface liquid film evaporation power measuring device. The irradiation system projects a pattern on the mask onto the substrate via the projection system. The substrate surface liquid film evaporation power measuring device includes a substrate support unit, a fluid transmission unit, a fluid flow control unit, a fluid temperature control unit, and a fluid temperature measuring unit. The substrate support unit is used to support the substrate and has a hollow structure. The fluid transmission unit is used to introduce a fluid medium, which is a gas, into the substrate support unit. The fluid flow control unit is used to control and measure the flow rate of the fluid medium flowing into the substrate support unit. The fluid temperature control unit is used to control the temperature of the fluid medium flowing into the substrate support unit. The fluid temperature measuring unit is used to measure the temperature difference between the fluid medium flowing into and out of the substrate support unit.

[0009] Optionally, it also includes a fluid input unit and a fluid output unit. The substrate support unit includes a fluid inlet and a fluid outlet. The fluid transmission unit is connected to the fluid inlet through the fluid input unit, and the fluid output unit is connected to the fluid outlet.

[0010] Optionally, the fluid temperature measurement unit includes a first temperature sensor and a second temperature sensor; the first temperature sensor is disposed at the fluid input unit and is used to measure the temperature of the fluid medium flowing into the substrate support unit; the second temperature sensor is disposed at the fluid output unit and is used to measure the temperature of the fluid medium flowing out of the substrate support unit.

[0011] Optionally, the base support unit is provided with at least one rib.

[0012] Optionally, the base support unit is provided with multiple ribs inside, and the multiple ribs are arranged in an alternating array.

[0013] Optionally, the rib plate can be straight or curved.

[0014] Optionally, the rib plate is J-shaped.

[0015] Optionally, the fluid medium is air or an inert gas.

[0016] Optionally, the fluid temperature control unit is a heat exchanger.

[0017] Optionally, the flow control unit is a volumetric flow control unit or a mass flow control unit.

[0018] Based on the same inventive concept, the present invention also provides a method for measuring the liquid film evaporation power on the substrate surface of a lithography machine. The method utilizes the liquid film evaporation power measuring device for the substrate surface of a lithography machine described in any of the preceding claims to measure the liquid film evaporation power on the substrate surface of the lithography machine. The substrate is placed on a substrate support unit, and the fluid medium introduced into the substrate support unit is a gas. The method for measuring the liquid film evaporation power on the substrate surface of the lithography machine includes:

[0019] Measure the flow rate of the fluid medium flowing into the substrate support unit and the temperature difference between the fluid medium flowing into and out of the substrate support unit; and,

[0020] The liquid film evaporation power on the substrate surface is obtained based on the flow rate of the fluid medium flowing into the substrate support unit and the temperature difference between the fluid medium flowing into and out of the substrate support unit.

[0021] The present invention provides a lithography machine and a method for measuring the liquid film evaporation power on the substrate surface of the lithography machine. The lithography machine includes a substrate surface liquid film evaporation power measuring device, which includes a substrate support unit, a fluid transmission unit, a fluid flow control unit, a fluid temperature control unit, and a fluid temperature measuring unit. The temperature difference of the fluid medium is obtained by measuring the temperature before and after the fluid medium enters the substrate support unit, and the flow rate of the fluid medium is obtained according to the fluid flow control unit to calculate the liquid film evaporation power on the substrate surface. In the present invention, the fluid medium is a gas. By introducing gas into the substrate support unit to maintain the temperature of the substrate, the use of gas as the fluid medium can significantly reduce the requirements for flow control accuracy and temperature measurement accuracy. Furthermore, multiple ribs are provided inside the substrate support unit to increase the contact area between the fluid and the solid, so that the gas flows more uniformly across the cross section. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of an immersion lithography machine;

[0023] Figure 2 This is a schematic diagram of a device for measuring evaporation power using a liquid film on a substrate surface;

[0024] Figure 3 This is a schematic diagram of the substrate surface liquid film evaporation power measuring device according to Embodiment 1 of the present invention;

[0025] Figure 4 This is a schematic diagram of a rib plate inside the base support unit of Embodiment 1 of the present invention;

[0026] Figure 5 This is a simulation diagram of the outlet temperature-time curve of the liquid film evaporation process in Embodiment 1 of the present invention;

[0027] Figure 6 This is a schematic diagram of another type of rib plate inside the base support unit of Embodiment 2 of the present invention;

[0028] Figure 7 This is a schematic diagram of the Coenda effect and local turbulence generated by wall separation in Embodiment 2 of the present invention;

[0029] Figure 8 This is the gas streamline simulation result of Embodiment 2 of the present invention;

[0030] In the picture,

[0031] 101-Lighting system; 102-Mask; 103-Mask stage; 104-Projection system; 105-Frame; 106-Immersion maintenance system; 107-Motion stage; 108-Base; 109-Water inlet pipe; 110a-First temperature sensor; 110b-Second temperature sensor; 111-Base support unit; 20-Base support unit; 201-Fluid input unit; 202-Fluid output unit; 203a-First temperature sensor; 203b-Second temperature sensor; 204-Fluid flow control unit; 205-Heat exchanger; 206a-Rib plate; 206b-Rib plate; 207-Fluid transfer unit. Detailed Implementation

[0032] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a lithography machine and a method for measuring the evaporation power of the liquid film on the substrate surface of the lithography machine. The advantages and features of the present invention will become clearer from the following description and claims. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of the present invention.

[0033] Example 1

[0034] For details, please refer to Figure 3 and Figure 4 , Figure 3 This is a schematic diagram of the substrate surface liquid film evaporation power measuring device according to Embodiment 1 of the present invention. Figure 4 This is a schematic diagram of a rib plate inside the base support unit of Embodiment 1 of the present invention. Figure 3 and Figure 4 As shown, this embodiment provides a lithography machine, including an irradiation system 101, a mask 102, a projection system 104, a substrate 108, and a substrate surface liquid film evaporation power measuring device. The irradiation system 101 projects the pattern on the mask 102 onto the substrate 108 via the projection system 104. The substrate surface liquid film evaporation power measuring device includes a substrate support unit 20, a fluid transmission unit 201, a fluid flow control unit, a fluid temperature control unit, and a fluid temperature measuring unit. The substrate support unit 20 is used to support the substrate 108 and has a hollow structure. The fluid transmission unit 201 is used to introduce a fluid medium, which is a gas, into the substrate support unit 20. The fluid flow control unit is used to control and measure the flow rate of the fluid medium flowing into the substrate support unit 20. The fluid temperature control unit is used to control the temperature of the fluid medium flowing into the substrate support unit 20. The fluid temperature measuring unit is used to measure the temperature difference between the fluid medium flowing into and out of the substrate support unit 20.

[0035] The device further includes a fluid input unit 201 and a fluid output unit 202. The substrate support unit 20 includes a fluid inlet and a fluid outlet. The fluid transmission unit 207 is connected to the fluid inlet through the fluid input unit 201, and the fluid output unit 202 is connected to the fluid outlet.

[0036] The fluid temperature measurement unit includes a first temperature sensor 110a and a second temperature sensor 110b; the first temperature sensor 110a is disposed at the fluid input unit 201 and is used to measure the temperature of the fluid medium flowing into the substrate support unit 20; the second temperature sensor 110b is disposed at the fluid output unit 202 and is used to measure the temperature of the fluid medium flowing out of the substrate support unit 20.

[0037] In this embodiment, the base support unit 20 is fixed to the motion table ( Figure 3 (Not shown in the image) and can move at high speed along with the motion table. The base support unit 20 is used to support the support base 208, and the temperature of the base 208 can be controlled by controlling the temperature of the base support unit 20 to compensate for the temperature drop on the surface of the base 208 due to the evaporation of the residual liquid film.

[0038] The dimensions of the substrate support unit 20 are preferably larger than the dimensions of the substrate. For example, if the substrate is a 12-inch wafer, then the substrate support unit 20 is circular with a diameter greater than 300 mm to meet the requirements for testing the evaporation power across the entire substrate. The structure of the substrate support unit 20 should have a thin wall, allowing the fluid to approach the substrate surface. The wall thickness of the side of the substrate support unit 20 closest to the substrate is, for example, less than 2 mm. Preferably, the substrate support unit 20 is made of a high thermal conductivity material, for example, with a thermal conductivity greater than or equal to 100 W / (m·℃). Specifically, the material of the substrate support unit 20 is, for example, aluminum alloy or silicon carbide ceramic. For air media, there is no leakage problem. The substrate support unit 20 can be manufactured using thin-plate welding or 3D printing, providing greater flexibility in the flow channel design. Of course, other processing and manufacturing methods can also be used in practice. Besides the upper surface (the side closest to the substrate) where evaporation power needs to be measured, the sides and lower surface of the substrate support unit 20 can be covered with heat-insulating material to further reduce the influence of external conditions.

[0039] Furthermore, the fluid input unit 201 is, for example, an air inlet pipe, the fluid output unit 202 is, for example, an air outlet pipe, and the fluid transmission unit 207 is, for example, a gas transmission pipe. The fluid input unit 201 and the fluid transmission unit 207 are connected.

[0040] Please refer to Figure 4 The base support unit 20 has at least one rib 206a inside; in this embodiment, the base support unit 20 has multiple ribs 206a inside, which are arranged in an alternating array. The shape of the rib 206a is, for example, a straight line, or it can be other shapes such as curves; this embodiment does not limit this. The main function of the rib 206a is to increase the fluid-solid contact area and make the fluid flow more uniformly across the cross section. The product hA of the total internal structural area A of the base support unit 20 (including the area of ​​the internal upper and lower surfaces and the side surfaces of the ribs) and the convective heat transfer coefficient h should be greater than 35 W / ℃. For example, at a gas flow rate of 200 L / min, the convective heat transfer coefficient can reach 70 W / (m²) through the arrangement of the ribs. 2 ·℃), with an area of ​​0.5m² 2 At this point, the measurement requirements can be met quite well.

[0041] The fluid medium can be air or an inert gas. Using air instead of water can significantly improve the requirements for flow control accuracy and temperature measurement accuracy. Taking an evaporation power of -5W as an example, when using air as the medium, the product of flow rate and temperature difference is (dV / dt)·ΔT=-248℃·L / min, which is more than 3400 times that when using water as the medium. The requirements for flow control accuracy and temperature measurement accuracy are significantly reduced.

[0042] The fluid temperature control unit is a heat exchanger 205, which is located on the fluid input unit 207 before the fluid enters the substrate support unit 20. The heat exchanger 205 is used to ensure that the temperature of the fluid entering the substrate support unit 20 is consistent with the ambient temperature.

[0043] In this embodiment, the fluid flow control unit 204 is a volumetric flow control unit, also known as an FC (Flow Controller). The fluid flow control unit 204 is used to bring the fluid flow rate to and maintain the desired flow rate.

[0044] In other embodiments, the substrate surface liquid film evaporation power measuring device may also be equipped with related acquisition equipment, recording equipment, monitoring equipment, and parameter adjustment equipment.

[0045] Based on the same inventive concept, this invention also provides a method for measuring the liquid film evaporation power on the substrate surface of a lithography machine. The method utilizes the substrate surface liquid film evaporation power measuring device to measure the liquid film evaporation power on the substrate surface of the lithography machine. The substrate is placed on a substrate support unit, and the fluid medium introduced into the substrate support unit is gas. The method for measuring the liquid film evaporation power on the substrate surface of the lithography machine includes:

[0046] Step S10: Measure the flow rate of the fluid medium flowing into the substrate support unit and the temperature difference between the fluid medium flowing into and out of the substrate support unit; and,

[0047] Step S20: The liquid film evaporation power on the substrate surface is obtained based on the flow rate of the fluid medium flowing into the substrate support unit and the temperature difference between the fluid medium flowing into and out of the substrate support unit.

[0048] Step S10 includes the following sub-steps:

[0049] Step S11: Open the fluid flow control unit 204, and the fluid medium enters the substrate support unit 20 through the fluid input unit 201, and record the flow rate of the fluid medium measured by the fluid flow control unit.

[0050] In step S12, the first temperature sensor 203a measures the first temperature of the fluid medium before it enters the substrate support unit 20.

[0051] In step S13, the fluid medium flows through the substrate support unit 20 and then enters the fluid output unit 202. The second temperature sensor 203b measures the second temperature of the fluid medium after it flows out of the substrate support unit 20.

[0052] Step S14: Calculate the temperature difference between the fluid medium flowing into and out of the substrate support unit 20 based on the first temperature and the second temperature.

[0053] Before step S11, that is, before the fluid medium enters the substrate support unit 20, the heat exchanger 205 controls the temperature of the fluid medium to ensure that the temperature of the fluid medium entering the substrate support unit 20 is the same as the ambient temperature.

[0054] In step S14, the difference between the first temperature and the second temperature is ΔT. The fluid flow control unit measures the flow rate of the fluid medium as dV / dt, and calculates the liquid film evaporation power on the substrate surface using the temperature difference ΔT before and after entering the substrate support unit 20 and the flow rate dV / dt of the fluid medium.

[0055]

[0056] Where dQ / dt is the heat absorption power of the fluid, in W; c is the specific heat capacity of the fluid; ρ is the density of the fluid; dV / dt is the flow rate of the fluid; and ΔT is the temperature difference measured at the inlet and outlet.

[0057] Figure 5 This is a simulation diagram of the outlet temperature-time curve of the liquid film evaporation process in Embodiment 1 of the present invention; this embodiment provides a method for simulating the liquid film evaporation power on the substrate surface of a lithography machine, including:

[0058] Step S31: Obtain the temperature change of the substrate surface and the temperature change of the pipe outlet caused by liquid film evaporation.

[0059] Step S32: Obtain the area of ​​the liquid film and the evaporation power, as well as the temperature fluctuation at the pipe outlet over time.

[0060] Step S33: Input the above measured values ​​into the CFD model to perform simulation and obtain the relationship between the temperature measurement values ​​and the evaporation power.

[0061] In step S31, during the high-speed movement of the motion table, the temperature changes on the silicon wafer surface and at the pipe outlet caused by liquid film evaporation are obtained.

[0062] In step S32, the trajectory of the horizontal movement of the motion table is complex, the speed of movement in both directions is constantly changing, the area of ​​the liquid film and the evaporation power are constantly changing, and the temperature at the pipe outlet fluctuates over time.

[0063] In step S33, the CFD model also incorporates motion trajectory and environmental factors into the simulation model.

[0064] This embodiment provides a simulation method for the evaporation power of the liquid film on the substrate surface of a lithography machine. By analyzing the relationship between the temperature measurement value and the evaporation power, the accuracy of the evaporation power measurement can be greatly improved.

[0065]

Example 2

[0066] The difference from the previous embodiment is that, in this embodiment, the rib 206b is curved. Furthermore, the rib 206b is J-shaped. The ribs 206b are staggered. The flow channel should be designed for turbulent flow to increase the convective heat transfer capacity of the fluid medium.

[0067] Figure 6 This is a schematic diagram of another type of rib plate inside the base support unit of Embodiment 2 of the present invention; Figure 7 This is a schematic diagram of the Coanda effect and local turbulence generated by wall separation in Embodiment 2 of the present invention. In this embodiment, the rib 206b includes a straight portion and an arc portion, and the rib 206b is J-shaped and arranged alternately. Structurally, the flow channel is generally divided into two parts. One part has J-shaped tips facing each other, and this side has a longer path, allowing the gas to flow in a curved manner, with a larger contact area with the rib 206b. The other part has J-shaped tips facing away from each other. According to the Coanda effect, the gas tends to flow along the wall, and wall separation begins after a certain distance. The arc on the back of the J-shaped tip causes the gas to flow in a curved manner in this part of the flow channel. On the other hand, according to the fluid characteristics, turbulence is generated locally at the wall separation point, increasing the local convective heat transfer coefficient, such as... Figure 7 As shown.

[0068] Figure 8 This is the gas streamline simulation result of Embodiment 2 of the present invention, from Figure 8 As can be seen, the ribs 206b are arranged in an alternating J-shape, which causes the fluid medium to produce the Coanda effect and wall separation phenomenon.

[0069] In this embodiment, during the movement of the motion platform, some heat transfer occurs between the surface of the substrate 208 and the air. The heat transfer rate from the solid structure (the substrate and the substrate support unit) to the fluid can be expressed as dQ. h / dt=hA(T s -T f ), where h is the convective heat transfer coefficient, A is the contact area of ​​the fluid-solid interface, and Ts It is the temperature of the solid, T f It is the ambient temperature, dQ h / dt represents the heat transfer rate of the fluid. To reduce the influence of other factors during the measurement process, the ambient temperature and the fluid within the substrate support unit are controlled at the same temperature. The factor affecting the heat transfer rate is the product of the convective heat transfer coefficient and the area, hA. Under typical motion speed and trajectory of the motion table, the convective heat transfer coefficient of the 208 substrate surface is 5 W / (m²). 2 (℃), the 12-inch substrate area is approximately 0.07m². 2 The flow channel should be designed for turbulent flow to increase the convective heat transfer capacity of the fluid medium. When using water as the medium, assuming a flow rate of 1 L / min, hA ranges from 200 to 500 W / ℃ depending on the channel structure. When using air as the medium, with a flow rate of 200 L / min, the convective heat transfer coefficient h should be ≥ 70 W / (m³) through structural design. 2 ·℃), when the area is greater than 0.5m 2 At that time, hA ≥ 35W / ℃, which is 100 times the heat exchange of the substrate 208 to the environment, and the medium in the flow channel carries away 99% of the heat. The h and A values ​​are relatively easy to design to meet the requirements for air with a flow rate of 200L / min, such as by arranging a large number of fins in the structure. Since there is no need to consider the leakage, it can be manufactured by welding or 3D printing.

[0070] Through the flow channel design, air can remove most of the heat, and the heat exchange between the substrate surface and the environment is negligible. Water would be a better medium, but the slight improvement would have a negligible impact on the measurement results. Furthermore, the flow control accuracy requirements for air are much lower than for water, while the temperature change is more than 10 times that of water, significantly reducing the need for temperature measurement accuracy.

[0071]

Example 3

[0072] The difference from Embodiment 1 is that, in this embodiment, the flow control unit is a mass flow control unit. Considering the measurement principle of this embodiment, the gas is compressible, and the changing density leads to a decrease in measurement accuracy, making a mass flow controller (MFC) more suitable.

[0073] Because gases are compressible, changes in density lead to a decrease in measurement accuracy, making a mass flow controller (MFC) more suitable. In this embodiment, the fluid flow control unit 204 is a mass flow control unit. The formula for the measurement principle is rewritten as follows, eliminating the influence of gas density changes on measurement accuracy.

[0074]

[0075] Where dQ / dt is the heat absorption power of the fluid, in W; c is the specific heat capacity of the fluid; dm / dt is the mass flow rate of the fluid; and ΔT is the temperature difference measured at the inlet and outlet.

[0076]

Example 4

[0077] The difference from Embodiment 1 is that in this embodiment, the surface of the substrate support unit 20 is coated with a film to make its surface characteristics consistent with the substrate surface. Therefore, there is no need to place a substrate, which can reduce the wall thickness between the flow channel and the evaporation surface and improve the heat transfer efficiency inside the structure.

[0078] A thin film with the same properties as the substrate is deposited on the upper surface of the substrate support unit 20 to ensure that the evaporation characteristics of the film surface are consistent with the actual working conditions. The factor affecting the evaporation characteristics is the contact angle of water on the substrate surface. Therefore, depositing a thin film with the same properties as the substrate on the upper surface of the substrate support unit 20 reduces the wall thickness between the flow channel and the evaporation surface, thereby improving the heat transfer efficiency inside the structure.

[0079] In summary, the lithography machine and its substrate surface liquid film evaporation power measurement method provided in this embodiment of the invention include a substrate surface liquid film evaporation power measurement device. This device comprises a substrate support unit, a fluid transmission unit, a fluid flow control unit, a fluid temperature control unit, and a fluid temperature measurement unit. The temperature difference of the fluid medium is obtained by measuring its temperature before and after it enters the substrate support unit, and the flow rate of the fluid medium is obtained from the fluid flow control unit to calculate the substrate surface liquid film evaporation power. In this invention, the fluid medium is a gas. By introducing gas into the substrate support unit to maintain the substrate temperature, using gas as the fluid medium significantly reduces the requirements for flow control accuracy and temperature measurement accuracy. Furthermore, multiple ribs are provided inside the substrate support unit to increase the fluid-solid contact area, allowing the gas to flow more uniformly across the cross-section.

[0080] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similar or identical parts between embodiments can be referred to mutually. In addition, different parts between embodiments can also be combined with each other, and this invention does not limit this.

[0081] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A lithography machine, characterized in that, The system includes an irradiation system, a mask, a projection system, a substrate, and a liquid film evaporation power measuring device on the substrate surface. The irradiation system projects a pattern on the mask onto the substrate via the projection system. The liquid film evaporation power measuring device on the substrate surface includes a substrate support unit, a fluid transmission unit, a fluid flow control unit, a fluid temperature control unit, and a fluid temperature measuring unit. The substrate support unit is used to support the substrate and has a hollow structure. The fluid transmission unit is used to introduce a fluid medium, which is a gas, into the substrate support unit. The fluid flow control unit is used to control and measure the flow rate of the fluid medium flowing into the substrate support unit. The fluid temperature control unit is used to control the temperature of the fluid medium flowing into the substrate support unit. The fluid temperature measuring unit is used to measure the temperature difference between the fluid medium flowing into and out of the substrate support unit. The thermal conductivity of the material of the substrate support unit is greater than or equal to 100 W / (m·℃).

2. The lithography machine as described in claim 1, characterized in that, It also includes a fluid input unit and a fluid output unit. The base support unit includes a fluid inlet and a fluid outlet. The fluid transmission unit is connected to the fluid inlet through the fluid input unit, and the fluid output unit is connected to the fluid outlet.

3. The lithography machine as described in claim 2, characterized in that, The fluid temperature measurement unit includes a first temperature sensor and a second temperature sensor; the first temperature sensor is disposed at the fluid input unit and is used to measure the temperature of the fluid medium flowing into the substrate support unit; the second temperature sensor is disposed at the fluid output unit and is used to measure the temperature of the fluid medium flowing out of the substrate support unit.

4. The lithography machine as described in claim 1, characterized in that, The base support unit has at least one rib plate inside.

5. The lithography machine as described in claim 4, characterized in that, The base support unit has multiple ribs inside, and the multiple ribs are arranged in an alternating array.

6. The lithography machine as described in claim 4, characterized in that, The ribs are either straight or curved.

7. The lithography machine as described in claim 6, characterized in that, The rib is J-shaped.

8. The lithography machine as described in claim 1, characterized in that, The fluid medium is air or an inert gas.

9. The lithography machine as described in claim 1, characterized in that, The fluid temperature control unit is a heat exchanger.

10. The lithography machine as described in claim 1, characterized in that, The flow control unit is either a volumetric flow control unit or a mass flow control unit.

11. A method for measuring the evaporation power of a liquid film on the substrate surface of a photolithography machine, characterized in that, The method for measuring the evaporation power of a substrate surface liquid film in a lithography machine, as described in any one of claims 1 to 10, comprises: measuring the evaporation power of a substrate surface liquid film in a lithography machine using a substrate surface liquid film evaporation power measuring device as described in any one of claims 1 to 10, wherein the substrate is placed on a substrate support unit, and the fluid medium introduced into the substrate support unit is a gas; and the method for measuring the evaporation power of a substrate surface liquid film in a lithography machine includes: Measure the flow rate of the fluid medium flowing into the substrate support unit and the temperature difference between the fluid medium flowing into and out of the substrate support unit; and, The liquid film evaporation power on the substrate surface is obtained based on the flow rate of the fluid medium flowing into the substrate support unit and the temperature difference between the fluid medium flowing into and out of the substrate support unit.

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