X-ray detection device

Abstract

The present application provides an X-ray detection device, which includes a substrate, a first transistor disposed on the substrate and including a silicon semiconductor layer, a second transistor disposed on the substrate and including a metal oxide semiconductor layer, a sensing element disposed on and electrically connected to the first transistor and the second transistor, a first barrier layer disposed between the first transistor and the second transistor, and a second barrier layer disposed between the second transistor and the sensing element. The X-ray detection device of the present application can further include a scintillator disposed on the sensing element.

Description

TECHNICAL FIELD

[0001] The present application relates to an X-ray detection device, and more particularly to an X-ray detection device including semiconductor layers of different materials. BACKGROUND

[0002] With the rapid development of technology, various imaging technologies of visible light and invisible light are widely used in daily life. For example, medical personnel often use X-ray sensors to read images for medical behavior or enterprises use X-ray sensors to detect commodity quality. The current flat panel X-ray sensor often uses a pixel array composed of transistors as the main element. However, the semiconductor layer in the transistor may be affected by the characteristics of the subsequent other processes or the film layers made thereafter, thereby affecting the accuracy of the X-ray sensor. Therefore, how to design the element structure to provide an X-ray sensor with better sensing effect is still a topic that needs continuous research in the industry. SUMMARY

[0003] The present application provides an X-ray detection device having two transistors and a sensing element, and the X-ray detection device further includes a first barrier layer and a second barrier layer. By providing the barrier layer, the quality of the semiconductor layer of the transistor can be improved, thereby improving the electrical performance of the transistor, so as to improve the detection effect and accuracy of the X-ray detection device.

[0004] The X-ray detection device provided by the embodiment of the present application includes a substrate, a first transistor disposed on the substrate and including a silicon semiconductor layer, a second transistor disposed on the substrate and including a metal oxide semiconductor layer, a sensing element disposed on the first transistor and the second transistor and electrically connected to the first transistor and the second transistor, a first barrier layer disposed between the first transistor and the second transistor, and a second barrier layer disposed between the second transistor and the sensing element. The X-ray detection device of the present application can further include a scintillator disposed on the sensing element. BRIEF DESCRIPTION OF DRAWINGS

[0005] Figure 1 A schematic diagram of partial elements of an electronic device of the present application.

[0006] Figure 2 A partial cross-sectional schematic diagram of a first embodiment of an X-ray detection device of the present application.

[0007] Figure 3 A partial cross-sectional schematic diagram of a second embodiment of an X-ray detection device of the present application.

[0008] Figure 4 A partial cross-sectional schematic diagram of a third embodiment of an X-ray detection device of the present application.

[0009] Figure 5 FIG. 8 is a partial cross-sectional schematic view of a seventh embodiment of an x-ray detection device of the present application.

[0010] Figure 6 FIG. 9(A) is a partial cross-sectional schematic view of an eighth embodiment of an x-ray detection device of the present application.

[0011] Figure 7 FIG. 10 is a partial cross-sectional schematic view of a ninth embodiment of an x-ray detection device of the present application.

[0012] Figure 8 FIG. 11 is a partial cross-sectional schematic view of a tenth embodiment of an x-ray detection device of the present application.

[0013] FIG. 9(A) is a partial cross-sectional schematic view of an eighth embodiment of an x-ray detection device of the present application.

[0014] FIG. 9(B) is an equivalent circuit diagram of a sensing side pixel of the x-ray detection device shown in FIG. 9(A).

[0015] Figure 10 FIG. 12 is a flowchart of a process for manufacturing an x-ray detection device of the present application.

[0016] Explanation of reference numerals: 100 - X-ray detection device; 102 - substrate; 104 - first insulating layer; 105 - third insulating layer; 106 - second insulating layer; 108, 116, 118 - connecting elements; 110 - PIN photodiode; 110a - N-type semiconductor layer; 110b - intrinsic layer; 110c - P-type semiconductor layer; 112 - lower electrode; 114 - upper electrode; 120, 121 - planar layer; 120a - top surface; 122, 124, 126, 128 - insulating layer; 130, 131, 132 - light shielding element; 136 - capacitor electrode; 140, GE1, GE2, GE3 - gate; 150 - equivalent circuit; 152 - signal readout line; 502-512 - steps; BL1 - first barrier layer; BL2 - second barrier layer; CH1, CH2, CH3 - channel region; D1 - first direction; D2 - second direction ;DE1, DE2, DE3-drain electrodes; DR1, DR2, DR3-drain regions; ED-electronic device; GI1-first gate insulating layer; GI2-second gate insulating layer; GL-gate line; LT, LT'-light; ML1-first conductive layer; ML2-second conductive layer; ML3-third conductive layer; ML4-fourth conductive layer; ML5-light shielding layer; PD-photodiode; PX-sensing pixel; SCI-scintillator; SCIa-front surface; SE1, SE2, SE3-source electrodes; SR1, SR2, SR3-source regions; SER-sensing element; SL-signal line; SM1-silicon semiconductor layer; SM2-metal oxide semiconductor layer; SM3-semiconductor layer; SW-switching element; T1-first transistor; T2-second transistor; T3-third transistor; Vcom-common voltage; Vres-reset voltage. DETAILED DESCRIPTION

[0017] The present invention is described in detail below with reference to specific embodiments and accompanying drawings. It should be noted that, to facilitate understanding and simplify the illustrations, the various figures in this disclosure depict only portions of the device or structure, and that certain components in the figures are not drawn to scale. Furthermore, the number and dimensions of components in the figures are for illustrative purposes only and are not intended to limit the scope of the present invention.

[0018] Throughout the present specification and claims, certain words will be used to refer to specific components. It will be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. It is not intended herein to distinguish between components that have the same function but different names. In the following specification and claims, the words "comprises," "has," and "includes" are open-ended words and should be interpreted as meaning "including, but not limited to..." When the terms "comprises," "includes," and / or "includes" are used in this specification, they specify the presence of the described features, regions, steps, operations, and / or elements, but do not preclude the presence or addition of one or more other features, regions, steps, operations, elements, and / or combinations thereof.

[0019] The use of ordinal numbers such as "first" and "second" in the specification and claims to modify claim elements does not in itself imply or represent any previous ordinal number of the claimed elements, nor does it represent the order of one claimed element relative to another claimed element or the order in manufacturing methods. The use of such ordinal numbers is only used to clearly distinguish one claimed element with a certain name from another claimed element with the same name.

[0020] The directional terms mentioned in the following embodiments, such as "up", "down", "left", "right", "front" or "back", etc., are only used with reference to the directions in the accompanying drawings. Therefore, the directional terms used are used to illustrate and are not used to limit the present invention. It must be understood that the elements not specifically described or illustrated can exist in various forms known to those skilled in the art. In addition, when an element or film layer is referred to as being on another element or another film layer, or being referred to as being connected to another element or another film layer, it should be understood that the element or film layer is directly located on the other element or another film layer, or is directly connected to the other element or another film layer, or there may be other Components or layers that are directly connected to each other (indirectly). Conversely, when a component or layer is referred to as being "directly on" or "directly connected to" another component or layer, it should be understood that there are no intervening components or layers. If a first device in a circuit is described as being electrically connected to a second device, this means that the first device can be directly electrically connected to the second device, or the first device can be indirectly electrically connected to the second device. When a first device is directly electrically connected to a second device, the connection between the first and second devices is only through wires or passive components (such as resistors, capacitors, etc.), and no other electronic components are connected between the first and second devices.

[0021] When the phrase "on" or "over" is used, it includes a situation where the two are in direct contact, or one or more other elements may be interposed between the two, in which case the two may not be in direct contact.

[0022] In the present invention, thickness, length, and width can be measured using an optical microscope (OM). Thickness or length can be measured using cross-sectional images obtained using a scanning electron microscope (SEM), but the present invention is not limited thereto. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error.

[0023] As used herein, the terms "about," "substantially," and "approximately" generally mean within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range. The quantities given herein are approximate, meaning that even without the specific wording "about," "substantially," or "approximately," the meaning of "about," "substantially," or "approximately" is implied.

[0024] It should be noted that in the following embodiments, the technical features in several different embodiments may be disassembled, replaced, reorganized, and mixed to complete other embodiments without departing from the spirit of the present invention.

[0025] Please refer to Figure 1 , Figure 1 FIG. 1 is a schematic diagram showing the configuration of local components of the electronic device of the present invention. Figure 1 As shown, the electronic device ED of the present invention includes an X-ray detection device 100, wherein the X-ray detection device 100 may include a sensing array composed of a plurality of sensing pixels. Figure 1 The configuration of a sensing pixel PX is shown. A sensing pixel PX may include a switching element SW and a sensing element SER, wherein the sensing element SER is electrically connected to the switching element SW, and the switching element SW is, for example, a transistor, such as a thin film transistor (TFT), including a gate, a drain, and a source. The gate and the drain may be electrically connected to the gate line GL and the signal line SL, respectively. It should be noted that a single sensing pixel PX is not limited to including only one transistor. For example, a single sensing pixel PX may include two or three transistors, but the present invention is not limited thereto. According to the present invention, Figure 1 The electronic device ED shown as including the X-ray detection device 100 may be, for example, a medical X-ray camera, but is not limited thereto. In alternative embodiments, the electronic device ED may be, for example, a detector for detecting product quality. The sensing element SER may be, for example, a photodiode, but is not limited thereto.

[0026] Please refer to Figure 2 , Figure 2FIG1 is a partial cross-sectional view of a first embodiment of an X-ray detection device of the present invention. The X-ray detection device 100 of the present invention can be applied to an electronic device ED. Figure 2 The local components of the X-ray detection device 100 shown correspond to Figure 1 One sensing pixel PX is shown, but the present invention is not limited thereto. Figures 3 to 9(A) The local components of the X-ray detection device of other embodiments of the present invention shown can also be regarded as corresponding to a sensing pixel PX, and no further details are given. The X-ray detection device 100 of the present invention includes a substrate 102 and a first transistor T1, a second transistor T2, a sensing element SER, a scintillator SCI, a first blocking layer BL1, and a second blocking layer BL2 arranged on the substrate 102. The substrate 102 may, for example, include a hard substrate, a flexible substrate, or a combination of the above substrates, but is not limited thereto. The material of the hard substrate may, for example, include glass, ceramic, quartz, sapphire, or a combination of the above materials. The material of the flexible substrate may, for example, include polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), other suitable materials, or a combination of the above materials. It should be noted that although Figure 2The substrate 102 shown is a single-layer structure, but the present embodiment is not limited thereto. In some embodiments, the substrate 102 may include a multi-layer structure, for example, a stacked structure formed by an organic layer / inorganic layer / organic layer. The first transistor T1 and the second transistor T2 each include a gate (GE), a channel region (CH), a source region (SR), and a drain region (DR), and the source region SR and the drain region DR may be the source and drain of the transistor, respectively. The channel region CH, the source region SR, and the drain region DR may be formed by a semiconductor layer. The channel region CH overlaps with the gate GE. In one embodiment, a conductive layer may be electrically connected to the source region SR and the drain region DR through a hole to form a source electrode (SE) and a drain electrode (DE). The semiconductor layer may include a silicon semiconductor, a metal oxide semiconductor, other suitable materials, or a combination of the foregoing materials, but the present invention is not limited thereto. Silicon semiconductors may include amorphous silicon semiconductors, single crystalline silicon semiconductors, polycrystalline silicon semiconductors or other suitable materials, but the present invention is not limited thereto. Metal oxide semiconductors include indium gallium zinc oxide (IGZO) semiconductors or other suitable materials, but the present invention is not limited thereto. In this embodiment, the semiconductor layer of the first transistor T1 is, for example, a silicon semiconductor layer SM1 (for example, a low-temperature polysilicon (LTPS) semiconductor layer), and the semiconductor layer of the second transistor T2 is, for example, a metal oxide semiconductor layer SM2 (for example, an indium gallium zinc oxide semiconductor layer), but the present invention is not limited thereto. The transistors may include bottom gate transistors, top gate transistors, double gate transistors or a combination of the aforementioned transistors, but the present invention is not limited thereto. In addition, when the transistors include different semiconductor layers, their source and drain may be interchangeable, but the present invention is not limited thereto. Figure 2In the embodiment shown, the silicon semiconductor layer SM1 is located between the metal oxide semiconductor layer SM2 and the substrate 102, the gate GE1 of the first transistor T1 is located between the gate GE2 of the second transistor T2 and the substrate 102, and the gate GE1 and the gate GE2 are respectively formed by the first conductive layer ML1 and the second conductive layer ML2, and the source region SR1 and the drain region DR1 of the first transistor T1 are located on both sides of the channel region CH1 and are electrically connected to the source electrode SE1 and the drain electrode DE1, respectively. The source region SR1 of the second transistor T2 is located between the gate GE2 of the second transistor T2 and the substrate 102. SR2 and the drain region DR2 are located on either side of the channel region CH2 and are electrically connected to the source electrode SE2 and the drain electrode DE2, respectively. The source electrode SE1, source electrode SE2, drain electrode DE1, and drain electrode DE2 may be formed from the same third conductive layer ML3, but this is not limiting. For example, in alternative embodiments, the source electrode SE1, source electrode SE2, drain electrode DE1, and drain electrode DE2 may be formed from more than one conductive layer, or the gate electrode GE1 and gate electrode GE2 may be formed from the same conductive layer. The first conductive layer ML1, the second conductive layer ML2, and the third conductive layer ML3 may comprise a metal material, such as, but not limited to, a metal layer. The source electrode SE1 and the drain electrode DE1 may penetrate the first gate insulating layer GI1, the first insulating layer 104, the first barrier layer BL1, the second gate insulating layer GI2, and the second insulating layer 106 to connect the source region SR1 and the drain region DR1 of the silicon semiconductor layer SM1. The source electrode SE2 and the drain electrode DE2 can penetrate the second insulating layer 106 and the second gate insulating layer GI2 to connect the source region SR2 and the drain region DR2 of the metal oxide semiconductor layer SM2, and a portion of the drain electrode DE2 can further penetrate the first blocking layer BL1 and the first insulating layer 104 to connect to a connecting element 108, and electrically connect to the gate GE1 of the first transistor T1 through the connecting element 108. The connecting element 108 and the gate GE1 can be composed of the same first conductive layer ML1. In some embodiments, the connecting element 108 can be directly connected to the gate GE1, but is not limited thereto. Figure 2 In the embodiment, the first transistor T1 and the second transistor T2 may not overlap each other in a first direction D1 parallel to the surface normal of the substrate 102. Alternatively, the first transistor T1 and the second transistor T2 are arranged side by side along a second direction D2 perpendicular to the first direction D1 and the surface normal of the substrate 102. However, the components of the first transistor T1 and the second transistor T2 and the relative positions of the two transistors are not limited to the above. For example, in a variant embodiment, the first transistor T1 and the second transistor T2 may at least partially overlap each other in the first direction D1.

[0027] The materials for the first gate insulating layer GI1, the first insulating layer 104, the second gate insulating layer GI2, and the second insulating layer 106 may include silicon oxide, but are not limited thereto. Any suitable insulating material may be used in these layers. In a variant embodiment, the first insulating layer 104 may include silicon nitride. This advantageously contains hydrogen ions, which can diffuse into the silicon semiconductor layer SM1, thereby improving the electrical performance of the first transistor T1.

[0028] The sensing element SER is disposed on the first transistor T1 and the second transistor T2, and the sensing element SER is electrically connected to the first transistor T1 and the second transistor T2. Figure 2 The sensing element SER shown in the cross-sectional view or in the first direction D1 of the substrate 102 does not overlap with the first transistor T1 or the second transistor T2, but the structure of the present invention is not based on the principle of Figure 2 For the purpose of limitation, “the sensing element SER is disposed on the first transistor T1 and the second transistor T2” may include a situation where the sensing element SER at least partially overlaps or does not overlap with the first transistor T1 or the second transistor T2 in the first direction D1. In addition, the sensing element SER may include, for example, a PIN photodiode 110, such as an amorphous silicon photodiode, a polycrystalline silicon photodiode, a single crystal silicon photodiode or other suitable sensing element, but is not limited thereto. The PIN photodiode 110 may include an N-type semiconductor layer 110a, an intrinsic layer 110b and a P-type semiconductor layer 110c. The lower electrode 112 of the sensing element SER is located at the lower side of the PIN photodiode 110 and may be electrically connected to the drain electrode DE2 of the second transistor T2 through a connecting element 116, as shown in FIG. Figure 2As shown in FIG, the lower electrode 112 and the connecting element 116 may be formed from the same fourth conductive layer ML4, but the present invention is not limited thereto. The lower electrode 112 may also be electrically connected to the second transistor T2 in other forms or structures. The upper electrode 114 of the sensing element SER is located on the upper side of the PIN photodiode 110 and may be electrically connected to the connecting element 118. The X-ray detection device 100 may also optionally include a planar layer 120 covering the sensing element SER. A portion of the connecting element 118 may be located on the planar layer 120, while another portion may pass through a portion of the planar layer 120 to be electrically connected to the upper electrode 114 of the sensing element SER, but the present invention is not limited thereto. The material of the planar layer 120 may include an acrylic-based polymer, a siloxane-based polymer, an epoxy-based polymer, or other suitable materials or combinations thereof, but the present invention is not limited thereto. The scintillator SCI is disposed on the sensing element SER, for example, on the planar layer 120. The scintillator SCI can convert the X-ray incident on the X-ray detection device 100 into visible light or other light that can cause the sensing element SER to generate photocurrent, such as Figure 2 As shown, for example, the scintillator SCI can convert X-rays into visible light. The light LT representing the X-ray can enter the scintillator SCI from the front surface SCIa of the scintillator SCI and be converted into the light LT' representing the visible light by the scintillator SCI, and the sensing element SER can receive at least part of the light LT'. The scintillator SCI includes, for example, a microcoluminar thallium doped cesium iodide (CsI:Tl) structure, but is not limited to this. In addition, other layers may be provided between the scintillator SCI and the sensing element SER, such as an insulating layer, a dielectric layer, or a metal film, but the present invention is not limited thereto. In a variant embodiment, the X-ray detection device 100 may also not include the scintillator SCI, and the sensing element SER directly receives the light incident from the outside. The structure and relative arrangement relationship between the sensing element SER and the scintillator SCI of the present invention are not limited to the above, and can be applied to other embodiments of the present invention, and will not be repeated here.

[0029] Furthermore, if Figure 2As shown, the first barrier layer BL1 is disposed between the first transistor T1 and the second transistor T2, and the second barrier layer BL2 is disposed between the second transistor T2 and the sensing element SER, where the first transistor T1 and the second transistor T2 can or can not overlap in the first direction D1. The first barrier layer BL1 and the second barrier layer BL2 comprise an insulating material, for example, the first barrier layer BL1 can comprise silicon oxide (SiOx), and the second barrier layer BL2 can comprise silicon oxide, silicon nitride (SiNx), silicon oxynitride, or a combination thereof, but the application is not limited thereto. It should be noted that at least one of the parameters of the first barrier layer BL1 and the second barrier layer BL2, such as film layer material, density, thickness, process conditions (e.g., process temperature), and hydrogen concentration, is different from each other. The application is designed by changing these parameters to make the first barrier layer BL1 and the second barrier layer BL2 have different characteristics, respectively, to improve the sensing performance of the X-ray detection device 100. The parameter ranges of the first barrier layer BL1 and the second barrier layer BL2 and the design reasons will be described in detail below.

[0030] According to the application, since the first transistor T1 includes the silicon semiconductor layer SM1, when the first insulating layer 104 has a higher hydrogen concentration, the hydrogen ions in the first insulating layer 104 can diffuse to the silicon semiconductor layer SM1, and the characteristics of the silicon semiconductor layer SM1 can be improved. For example, the first insulating layer 104 can include silicon nitride or silicon oxide with a higher hydrogen concentration. However, because it is necessary to reduce the hydrogen ions in the first insulating layer 104 from diffusing into the metal-oxide-semiconductor layer SM2 of the second transistor T1, affecting its semiconductor characteristics, the application is designed to dispose the first barrier layer BL1 between the first transistor T1 and the second transistor T2, for example, to dispose the first barrier layer BL1 between the silicon semiconductor layer SM1 and the metal-oxide-semiconductor layer SM2, or between the first insulating layer 104 and the metal-oxide-semiconductor layer SM2 (or the second transistor T2), to reduce the diffusion of hydrogen ions from the first insulating layer 104 into the metal-oxide-semiconductor layer SM2. Therefore, the first barrier layer BL1 should have lower hydrogen concentration and higher film density than the first insulating layer 104. For example, the process temperature of the first barrier layer BL1 is higher, ranging from about 300 to 360 degrees Celsius, the weight percentage of hydrogen concentration ranges from about 2% to 5%, for example, 2%, 2.5%, 3%, 4%, or 5%, and the thickness ranges from about 80 nanometers (nm) to 200 nanometers, for example, 80 nanometers, 120 nanometers, or 150 nanometers, but the film layer parameters of the first barrier layer BL1 are not limited thereto.

[0031] On the other hand, silane (SiH4) gas is introduced during the manufacturing process of the sensing element SER. To reduce the impact on the metal oxide semiconductor layer SM2, the second barrier layer BL2 of the present invention also has parameter conditions. For example, compared to the first barrier layer BL1, the second barrier layer BL2 should have characteristics such as a lower process temperature, a lower density, a greater thickness, and / or a higher hydrogen concentration. In other words, the hydrogen concentration of the second barrier layer BL2 is greater than that of the first barrier layer BL1, the density of the first barrier layer BL1 is greater than that of the second barrier layer BL2, and the thickness of the first barrier layer BL1 is less than that of the second barrier layer BL2. For example, the process temperature range of the second barrier layer BL2 is approximately 180 degrees Celsius to 240 degrees Celsius, and the density of the second barrier layer BL2 is approximately 0.1-1.0 g / cm2 lower than that of the first barrier layer BL1. 3 The hydrogen concentration of the second barrier layer BL2 ranges from approximately 5% to 11%, for example, 5%, 6%, 7%, 8%, 9%, 10% or 11%, and the thickness of the film layer ranges from approximately 200 nm to 500 nm, for example, 200 nm, 250 nm, 300 nm, 400 nm or 500 nm. However, the parameters of the second barrier layer BL2 of the present invention are not limited to the above examples.

[0032] The density of the above-mentioned film layer can be measured, for example, by an X-ray reflection (XRR) method or a transmission electron microscope (TEM), but the present invention is not limited thereto. The X-ray reflection method can be measured using a high-resolution X-ray diffraction analyzer, such as a machine (but not limited to) Bruker Discover, which utilizes the characteristics of total X-ray reflection to measure the thickness, interface roughness, and electron density of multi-layer / single-layer film samples. For example, when measuring the density of the film layer, the thickness of the test piece can be 300 nanometers or less, and in the case of a cross-section of the test piece, the density of the film layer can be obtained by measuring a point in the middle of the film layer. The thickness of the above-mentioned film layer can also be measured using TEM, for example, by directly measuring the thickness of the film layer from a TEM cross-sectional photograph. The measurement point can be measured from any position of the barrier layer corresponding to the semiconductor layer. Examples of measuring hydrogen concentration in the aforementioned film include X-ray photoelectron spectroscopy (XPS), electron spectroscopy for chemical analysis (ESCA), time of flight-secondary ion mass spectrometry (TOF-SIMS), or hydrogen forward scattering (HFS). In the TOF-SIMS method, for example, using (but not limited to) a nanoTOF II instrument, a bismuth (Bi) 3+ ion beam can be applied to the film, followed by analysis and measurement of secondary ions generated by the ion beam in the sample. In the HFS method, for example, using (but not limited to) an ERDA instrument, a helium (He) ++ ion beam can be applied to the film, followed by analysis and measurement of diffuse hydrogen ions or helium ions generated by the ion beam bombardment of the sample. In the XPS / ESCA analysis method, for example, using (but not limited to) an ESCALAB Xi+ instrument, X-rays are incident on the sample surface, and the energy of the electrons escaping from the sample surface is captured to calculate the hydrogen concentration. The method for measuring the density, thickness and hydrogen concentration of the film layer of the present invention is not limited to the above.

[0033] In addition, the X-ray detection device 100 of the present invention may further include an insulating layer 122 disposed between the substrate 102 and the first transistor T1. The hydrogen concentration of the insulating layer 122 may be greater than the hydrogen concentration of the second barrier layer BL2, and may also be greater than the hydrogen concentration of the first barrier layer BL1. The density of the insulating layer 122 may be less than the density of the first barrier layer BL1. The insulating layer 122 may be used as a buffer layer to reduce the continuous diffusion of water vapor or oxygen penetrating from the substrate 102 when manufacturing the silicon semiconductor layer SM1, thereby reducing the influence of water vapor or oxygen on the characteristics of the transistor. The insulating layer 122 may be a single layer or a multi-layer structure, and is not limited to Figure 2 The insulating layer 122 is a single-layer structure. If the insulating layer 122 is a single-layer structure, the material of the insulating layer 122 includes, for example, silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof, but is not limited thereto. If the insulating layer 122 is a multi-layer structure, different materials may be stacked alternately, but the present invention is not limited thereto.

[0034] According to the present invention, the provision of the first barrier layer BL1 can reduce the diffusion of hydrogen ions from the underlying film layer into the metal oxide semiconductor layer SM2, thereby minimizing the impact on the metal oxide semiconductor layer SM2. The provision of the second barrier layer BL2 can also reduce the problem of hydrogen ion diffusion into the metal oxide semiconductor layer SM2 during the fabrication of the sensing element SER. Therefore, the provision of the first and second barrier layers BL1 and BL2 can improve the electrical performance of different transistors. Furthermore, the X-ray detection device 100 of the present invention includes transistors made of different semiconductor materials, and thus can serve as different electronic components in the sensing pixel based on their characteristics, thereby enhancing the sensing effect of the sensing pixel.

[0035] It should be noted that Figure 2 The cross-sectional structure of the partial components of the first embodiment of the X-ray detection device of the present invention is only shown as an example, and the X-ray detection device of the present invention is not Figure 2 The following description is limited to other embodiments or variations of the X-ray detection device of the present invention. To simplify the description, the same film layers or components in the following embodiments will be labeled the same, and their features will not be repeated. The differences between the embodiments will be described in detail below.

[0036] Please refer to Figure 3 , Figure 3 This is a partial cross-sectional diagram of a second embodiment of the X-ray detection device of the present invention. The main difference between this embodiment and the first embodiment is that: Figure 3 The X-ray detection device 100 includes two insulating layers between the silicon semiconductor layer SM1 and the metal oxide semiconductor layer SM2, and two buffer layers between the substrate 102 and the silicon semiconductor layer SM1. Figure 3As shown, the first insulating layer 104 and the third insulating layer 105 are sequentially disposed on the silicon semiconductor layer SM1 and can serve as interlayer dielectric layers. The source electrode SE1 and the drain electrode DE1 formed by the third conductive layer ML3 can penetrate the first insulating layer 104 and the third insulating layer 105. For example, the material of the first insulating layer 104 can include silicon oxide, and the material of the third insulating layer 105 can include silicon nitride, but this is not limited to this. The materials of the first insulating layer 104 and the third insulating layer 105 can also be interchangeable. When the first insulating layer 104 or the third insulating layer 105 includes silicon nitride, its hydrogen ions can diffuse downward into the silicon semiconductor layer SM1, thereby improving the electrical performance of the first transistor T1. In addition, the insulating layer 122 and the insulating layer 124 are located between the first transistor T1 and the substrate 102, providing a buffer function to reduce the penetration of moisture and / or oxygen from below the substrate 102. The materials of the insulating layer 122 and the insulating layer 124 include, for example, silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof, but are not limited thereto. The insulating layer 122 and the insulating layer 124 may include different materials, for example, the insulating layer 122 includes silicon nitride, and the insulating layer 124 includes silicon oxide, but are not limited thereto. The hydrogen concentration of the insulating layer 124 may be greater than the hydrogen concentration of the second barrier layer BL2. The configuration and materials of the first insulating layer 104, the third insulating layer 105, the insulating layer 122, and the insulating layer 124 in this embodiment may be applied to other embodiments and will not be described in detail. Furthermore, Figure 3 The scintillator SCI (not shown) on the upper side of the sensing element SER of the illustrated X-ray detection device 100 can be omitted. Light LT can enter the sensing element SER from the upper surface 120a of the planar layer 120. The light LT can be visible light or any other light capable of generating a photocurrent in the sensing element SER. It should be noted that variations of this embodiment may also include a scintillator SCI disposed on the upper side of the sensing element SER and / or an insulating layer between the scintillator SCI and the sensing element SER. The scintillator SCI and the insulating layer between the scintillator SCI and the sensing element SER can be used in other subsequent embodiments of the present invention. Their functions and materials can be referenced to those of the first embodiment and will not be further described.

[0037] Please refer to Figure 4 , Figure 4 FIG. 1 is a partial cross-sectional diagram of a third embodiment of an X-ray detection device of the present invention. Figure 3 The embodiment shown, Figure 4 The X-ray detection device shown further includes a flat layer 121 disposed between the sensing element SER and the second blocking layer BL2. The flat layer 121 can provide a flatter surface, thereby improving the manufacturing process and / or characteristics of the sensing element SER. Figure 4The insulating layers and barrier layers are shown as having flat upper and lower surfaces. However, in reality, these insulating or barrier layers may have uneven top and bottom surfaces depending on the pattern of the underlying patterned film layer or electrical component, resulting in uneven top surfaces. In this embodiment, the planarization layer 121 disposed on the second barrier layer BL2 provides a relatively flat top surface, allowing the sensing element SER to be disposed on a relatively flat surface. The material of the planarization layer 121 may include the planarization layer 120 described above, and the material of the planarization layer 121 may be the same as or different from that of the planarization layer 120.

[0038] Please refer to Figure 5 , Figure 5 FIG is a partial cross-sectional view of a fourth embodiment of an X-ray detection device according to the present invention. Figure 2 and Figure 3 In comparison, Figure 5 The X-ray detection device 100 shown includes an insulating layer 126 disposed between the insulating layer 122 and the silicon semiconductor layer SM1. The material thereof may include, for example, silicon nitride, silicon oxide, silicon oxynitride, or a combination thereof, but is not limited thereto. The insulating layer 126 can reduce the penetration of moisture and / or oxygen from the lower side (i.e., the back side) or the substrate 102 of the X-ray detection device 100, thereby reducing damage to the device caused by moisture and / or oxygen. According to this embodiment, the hydrogen concentration of the insulating layer 126 is greater than the hydrogen concentration of the first barrier layer BL1, and the density of the insulating layer 126 is lower than the density of the first barrier layer BL1. When the hydrogen concentration of the insulating layer 126 is greater than the hydrogen concentration of the first barrier layer BL1 and the density of the insulating layer 126 is lower than the density of the first barrier layer BL1, the penetration of moisture and / or oxygen from the substrate 102 can be reduced, and the process time (tact time) can be reduced, thereby reducing manufacturing costs. The insulating layer 126 in this embodiment can be applied to other embodiments of the present invention and will not be described in detail. Furthermore, Figure 5 The X-ray detection device 100 shown may further include an insulating layer 128 disposed on the photosensitive element SER. The insulating layer 128 may comprise, but is not limited to, silicon nitride, silicon oxide, silicon oxynitride, or a combination thereof. The insulating layer 128 may serve as a third barrier layer to reduce the permeation of water, oxygen, and / or oxygen from the outside, thereby reducing the permeation of water, oxygen, and / or oxygen from the outside (e.g., the top) of the X-ray detection device 100. According to this embodiment, when the hydrogen concentration of the insulating layer 128 is lower than the hydrogen concentration of the second barrier layer BL2 and the density of the insulating layer 128 is higher than the density of the second barrier layer BL2, the insulating layer 128 may reduce the permeation of water, oxygen, and / or oxygen. The insulating layer 128 in this embodiment may be applied to other embodiments of the present invention and will not be further described.

[0039] Please refer to Figure 6 , Figure 6 FIG is a partial cross-sectional view of a fifth embodiment of the X-ray detection device of the present invention. Figure 3 Compared with the embodiment shown, Figure 6 The X-ray detection device 100 further includes a light shielding element 130 disposed between the flat layer 120 and the second blocking layer BL2. The light shielding element 130 may at least partially overlap with the first transistor T1 or completely overlap with the first transistor T1 in the first direction D1, thereby reducing the incidence of light from above the X-ray detection device 100 into the first transistor T1, thereby improving the electrical performance of the first transistor T1. The light shielding element 130 may be formed of the same fourth conductive layer ML4 as the lower electrode 112 of the sensing element SER, that is, the lower electrode 112 of the sensing element SER and the light shielding element 130 may be formed together by the same patterning process, but the present invention is not limited thereto. Figure 6 In the embodiment, the light shielding element 130 can be directly electrically connected to the connecting element 116, but the present invention is not limited thereto. In alternative embodiments, the light shielding element 130 may not be electrically connected to the connecting element 116. For example, (but not limited to), the light shielding element 130 may be in a floating state. Because the fourth conductive layer ML4 is farther away from the first transistor T1, when the light shielding element 130 is formed using the fourth conductive layer ML4, the coupling effect between the light shielding element 130 and the first transistor T1 is reduced, resulting in a smaller coupling capacitance and less impact on the characteristics of the first transistor T1. The light shielding element 130 of this embodiment can be applied to other embodiments of the present invention and will not be further described.

[0040] Please refer to Figure 7 , Figure 7 FIG is a partial cross-sectional view of a sixth embodiment of an X-ray detection device according to the present invention. Figure 4 Compared with the embodiment shown, Figure 7The X-ray detection device 100 further includes a light shielding layer ML5 disposed between the planar layer 121 and the second blocking layer BL2. The patterned light shielding layer ML5 can include a light shielding element 131 and a light shielding element 132, which at least partially overlap the second transistor T2 and the first transistor T1 in the first direction D1, respectively. For example, the light shielding element 131 can at least partially overlap the metal-oxide semiconductor layer SM2 in the first direction D1, and the light shielding element 132 can at least partially overlap the silicon semiconductor layer SM1 in the first direction D1. The light shielding element 131 and the light shielding element 132 can reduce or decrease the light incident from above the X-ray detection device 100, and reduce the influence of the light on the second transistor T2 and the first transistor T1. The light shielding layer ML5 can include a conductive material, such as a metal layer. In this case, the light shielding element 131 and the light shielding element 132 can be in a floating state and not electrically connected to other elements. The light shielding layer ML5 can also include an insulating material, such as a polymer material or an organic material containing a black pigment. In some embodiments, the light shielding layer ML5 can be a black matrix layer, for example. The material of the light shielding layer ML5 is not limited to the above. The light shielding layer ML5 of the present embodiment can be applied to other embodiments of the present application, and will not be described again.

[0041] Please refer to Figure 8 , Figure 8 Figure 8 is a partial cross-sectional view of a seventh embodiment of an X-ray detection device of the present application. Compared with the structure shown in Figure 6 , Figure 8 The X-ray detection device 100 includes a capacitor electrode 136 disposed on the lower side of the lower electrode 112 of the sensing element SER, and the second blocking layer BL2 is disposed between the lower electrode 112 and the capacitor electrode 136. Thus, the capacitor electrode 136, the lower electrode 112, and the second blocking layer BL2 between the capacitor electrode 136 and the lower electrode 112 can form a capacitor. The capacitor electrode 136 in the present embodiment can be formed by the third conductive layer ML3, which is formed at the same time as the source electrode SE1, the source electrode SE2, the drain electrode DE1, and the drain electrode DE2, but is not limited thereto. The capacitor electrode 136 can be applied to other embodiments of the present application, and will not be described again.

[0042] Please refer to Figures 9(A) and 9(B). Figure 9(A) is a partial cross-sectional view of an eighth embodiment of an X-ray detection device of the present application, and Figure 9(B) is an equivalent circuit diagram of a sensing pixel PX of the X-ray detection device shown in Figure 9(A). Compared with the structure shown in Figure 3In contrast, the X-ray detecting device 100 shown in FIG. 9(A) further includes a third transistor T3. The third transistor T3 includes a gate electrode GE3, a channel region CH3, a source region SR3 and a drain region DR3, and the source region SR3 and the drain region DR3 can be the source and the drain of the third transistor, respectively. The channel region CH3, the source region SR3 and the drain region DR3 can be formed by a semiconductor layer SM3, and the channel region CH3 overlaps with the gate electrode GE3. In the embodiment shown in FIG. 9(A), a portion of the third conductive layer ML3 can be electrically connected to the source region SR3 and the drain region DR3 through the hole to form a source electrode SE3 and a drain electrode DE3. In other words, the source electrode SE3 and the drain electrode DE3 can penetrate the second gate insulating layer GI2 and the second insulating layer 106 to connect the source region SR3 and the drain region DR3 of the semiconductor layer SM3. The semiconductor layer SM3 of the third transistor T3 can include a silicon semiconductor, a metal oxide semiconductor, other suitable material or combination thereof, and the present application is not limited thereto. The materials of the silicon semiconductor and the metal oxide semiconductor are described above with respect to the first transistor T1 and the second transistor T2, and thus will not be repeated here. In this embodiment, the semiconductor layer SM3 of the third transistor T3 is a metal oxide semiconductor layer, but the present application is not limited thereto. The third transistor T3 can include a bottom gate transistor, a top gate transistor, a double gate transistor or combination thereof, and the present application is not limited thereto. The gate electrode GE3 of the third transistor T3 and the gate electrode GE2 of the second transistor T2 can be formed by the second conductive layer ML2, and the semiconductor layers (i.e. the semiconductor layer SM3 and the metal oxide semiconductor layer SM2) of the third transistor T3 and the second transistor T2 can be formed by the same process step. The source electrode SE3 and the drain electrode DE3 corresponding to the third transistor T3 can be formed by the same third conductive layer ML2 as the source electrode SE2 and the drain electrode DE2 corresponding to the second transistor T2 or the source electrode SE1 and the drain electrode DE1 corresponding to the first transistor T1, but the present application is not limited thereto. The source electrode SE3 can be directly electrically connected to the drain electrode DE1, but the present application is not limited thereto. Furthermore, the first conductive layer ML1 can further selectively include a gate electrode 140 disposed between the gate electrode GE3 and the substrate 102. The gate electrode 140 can be electrically connected to the gate electrode GE3, and the gate electrode 140 and the gate electrode GE3 can simultaneously serve as the gate electrode of the third transistor T3. For example, the gate electrode 140 is a lower gate electrode, the gate electrode GE3 is an upper gate electrode, and one of the gate electrode 140 and the gate electrode GE3 can be electrically connected to a control line to turn on / off the third transistor T3. In this embodiment, the gate electrode 140 can be formed by the first conductive layer ML1 together with the gate electrode GE1, and when the gate electrode 140 includes an opaque material, the gate electrode 140 can also serve as a light shielding element to reduce or decrease the light incident from the lower side of the substrate 102 and reduce the influence of the light on the semiconductor layer SM3.However, the location and film formation of the gate 140 of the present invention are not limited to those shown in FIG. 9(A). In a variant embodiment, the gate 140 can be disposed, for example, between the first barrier layer BL1 and the third insulating layer 105 or between the third insulating layer 105 and the first insulating layer 104 and formed with other conductive layers, but the present invention is not limited thereto.

[0043] FIG9(B) shows an equivalent circuit 150 of a sensing pixel PX, which roughly corresponds to the components shown in FIG9(A). The second transistor T2 serves as a reset element in the sensing pixel PX. Its source can be supplied with a reset voltage Vres, while its drain is electrically connected to the bottom electrode of the sensing element SER and the gate of the first transistor T1. The first transistor T1 serves as an amplification element in the sensing pixel PX, functioning as an amplifier. Its source can be supplied with a common voltage Vcom or an operating voltage. The drain of the first transistor T1 is electrically connected to the source of the third transistor T3. The third transistor T3 serves as a readout element in the sensing pixel PX. The drain of the third transistor T3 is electrically connected to a signal readout line 152 or a signal readout unit (not shown). The signal readout line 152 outputs the output signal amplified by the first transistor T1, i.e., the output current Id, for signal analysis by the signal readout unit.

[0044] According to the present invention, the second transistor T2 serving as a reset element may include a metal oxide semiconductor layer, which has the advantages of low leakage and / or accurate zeroing, thereby improving the accuracy of the sensing pixel PX in detecting light intensity, such as the metal oxide semiconductor layer SM2 shown in Figure 9(A). On the other hand, the first transistor T1 may include a silicon semiconductor layer, and the third transistor T3 may include a metal oxide semiconductor layer or a silicon semiconductor layer. In the structure shown in Figure 9(A), the active layer of the first transistor T1 is, for example, a silicon semiconductor layer SM1. Since the electron mobility of the silicon semiconductor layer SM1 is high, it can improve the signal-to-noise ratio and thus improve the sensitivity of detecting light; and the active layer of the third transistor T3 (i.e., the semiconductor layer SM3) is, for example, a metal oxide semiconductor layer, which can form a low leakage transistor and reduce the error rate of the read signal.

[0045] Please refer to Figure 10 , Figure 10 FIG. 1 is a schematic diagram of the manufacturing process of the X-ray detection device of the present invention. According to the present invention, the manufacturing method of the X-ray detection device 100 may generally include the following steps:

[0046] Step 502: Provide a substrate, for example, the substrate 102 in the above embodiment.

[0047] Step 504 : Form a semiconductor layer. For example, a patterned silicon semiconductor layer SM1 is formed on the substrate 102 , wherein the pattern of the silicon semiconductor layer SM1 may at least correspond to the active region of the first transistor T1 to be fabricated.

[0048] Step 506: Form a first barrier layer on the semiconductor layer. For example, a first barrier layer BL1 is formed on the silicon semiconductor layer SM1. Before forming the first barrier layer BL1, a first gate insulating layer GI1, a patterned first conductive layer ML1, and a first insulating layer 104 may be formed on the silicon semiconductor layer SM1, but the present invention is not limited thereto.

[0049] Step 508: Form a semiconductor layer on the substrate. For example, after forming the first barrier layer BL1, a patterned metal oxide semiconductor layer SM2 is formed on the substrate 102. The pattern of the metal oxide semiconductor layer SM2 may correspond to at least the active region of the second transistor T2 to be fabricated. In some embodiments, the metal oxide semiconductor layer SM2 may be formed on the first barrier layer BL1 formed in step 506, but this is not limited thereto.

[0050] Step 510: A second barrier layer is formed on the semiconductor layer formed in step 508. For example, the second barrier layer BL2 is formed on the metal oxide semiconductor layer SM2. Before forming the second barrier layer BL2, a second gate insulating layer GI2, a patterned second conductive layer ML2, a second insulating layer 106, and a third conductive layer ML3 may be formed on the metal oxide semiconductor layer SM2, but the present invention is not limited thereto.

[0051] Step 512: Form a sensing element. For example, a sensing element SER is formed on the second transistor T2. The sensing element SER may include a photodiode, but is not limited thereto.

[0052] In the above steps, the first barrier layer and the second barrier layer can be fabricated by a plasma enhanced chemical vapor deposition (PECVD), a plasma enhanced atomic layer deposition (PEALD), or a metal organic atomic layer deposition (MOALD) process. In the process, SiH4 gas can be introduced, and a radio frequency (RF) power generator can be used as a plasma source. In some embodiments, a first SiH4 parameter in the first barrier layer process can be less than a second SiH4 parameter in the second barrier layer process. The SiH4 parameter can include, for example, a unit time gas flow rate of SiH4. The greater the unit time gas flow rate of SiH4, the higher the hydrogen concentration of the formed film layer. For example, the flow rate of SiH4 in the first barrier layer process can be in a range of 200-800 standard cubic centimeters per minute (sccm), such as 200 sccm, 300 sccm, 400 sccm, 600 sccm, or 800 sccm. The flow rate of SiH4 in the second barrier layer process can be in a range of 801-2400 sccm, such as 1000 sccm, 1200 sccm, 1600 sccm, or 2400 sccm. However, the present application is not limited to the above. In some embodiments, a first RF power parameter in the first barrier layer process can be greater than a second RF power parameter in the second barrier layer process. The RF power parameter is proportional to the plasma intensity. The greater the plasma intensity, the higher the density of the formed film layer.

[0053] As described above, the X-ray detection device includes two transistors and a sensing element. The two transistors can include semiconductor layers of different materials, such as a silicon semiconductor layer and a metal oxide semiconductor layer. A barrier layer is disposed between the semiconductor layers of different materials. Another barrier layer can be disposed between the sensing element and the transistors. By adjusting the process parameters and / or film layer parameters of the barrier layers, the semiconductor layers can be protected or their electrical properties can be improved. For example, the diffusion of hydrogen ions to the metal oxide semiconductor layer can be reduced, or the properties of the silicon semiconductor layer can be improved, thereby improving the electrical properties of the different transistors. In addition, the transistors including different semiconductor materials can be selected as reset elements, amplification elements, or read elements in the sensing pixels, or other functional transistors, to improve the accuracy of the sensing pixels.

[0054] The above merely illustrates the embodiments of the present application but should not be taken as limitations. Various changes and modifications can be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An X-ray detection device, characterized in that: include: a substrate; a first transistor disposed on the substrate and comprising a silicon semiconductor layer; a second transistor disposed on the substrate and comprising a metal oxide semiconductor layer; a sensing element disposed on the first transistor and the second transistor and electrically connected to the first transistor and the second transistor; a scintillator disposed on the sensing element; a first barrier layer disposed between the first transistor and the second transistor; and A second blocking layer is disposed between the second transistor and the sensing element.

2. The X-ray detection device according to claim 1, wherein: The hydrogen concentration of the second barrier layer is greater than the hydrogen concentration of the first barrier layer.

3. The X-ray detection device according to claim 2, wherein: The invention also includes an insulating layer disposed between the first transistor and the substrate, and the hydrogen concentration of the insulating layer is greater than the hydrogen concentration of the second barrier layer.

4. The X-ray detection device according to claim 1, wherein: The density of the first barrier layer is greater than the density of the second barrier layer.

5. The X-ray detection device according to claim 1, wherein: The thickness of the first barrier layer is smaller than that of the second barrier layer.

6. The X-ray detection device according to claim 1, wherein: The material of the first barrier layer includes silicon oxide.

7. The X-ray detection device according to claim 1, wherein: The material of the second barrier layer includes silicon oxide, silicon nitride, or a combination of silicon oxide and silicon nitride.

8. The X-ray detection device according to claim 1, wherein: The sensing element is a PIN photodiode.

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