Doped amorphous silicon optical device film and deposition by incorporation of dopant atoms

Abstract

Embodiments of the present disclosure generally relate to methods and materials for the manufacture of optical devices. More specifically, the embodiments described herein provide optical film deposition methods and materials that incorporate dopant atoms by suppressing the crystal growth of optical materials during deposition, thereby expanding the processing window for amorphous optical film deposition. By enabling amorphous films to be deposited at higher temperatures, significant cost savings and increased throughput can be achieved.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to the manufacture of optical devices. More specifically, the embodiments described herein provide doped optical device films, optical devices having a doped structure, and methods of forming doped optical device films and structures. Background Art

[0002] Optical devices, such as waveguides, planar optical devices, metasurfaces, color filters, and anti-reflection coatings, are processed to exhibit high refractive index and low absorption loss characteristics. Conductive materials have high refractive index and low absorption loss, which enables efficient, large-scale manufacture of optical devices.

[0003] Optical devices with polycrystalline films are inhomogeneous, have large surface roughness, and may be birefringent, while amorphous films are homogeneous, smooth, and have a uniform refractive index. However, conventional physical vapor deposition (PVD) processes for forming amorphous films for optical devices are performed at substrate temperatures below 30 °C to suppress microcrystal formation. The processing temperature of below 30 °C for titanium dioxide increases the manufacturing cost and complexity due to the need for special hardware, while processing temperatures above about 30 °C result in polycrystalline titanium dioxide films with significant inhomogeneity. Additionally, processing temperatures of about 200 °C or higher produce distinct crystals in the film.

[0004] Accordingly, there is a need in the art for improved doped optical device films, optical devices having a doped structure, and methods of forming doped optical device films and structures. Summary of the Invention

[0005] In one embodiment, a method is provided. The method includes disposing an optical device substrate on a substrate support. The substrate support is disposed in a chamber. The chamber includes an optical device material target disposed in the chamber and a dielectric target disposed in the chamber. The optical device material target includes an optical device material and the dielectric target includes a dopant material. A doped optical device film is deposited on the optical device substrate. Depositing the doped optical device film includes: depositing the optical device material to form an optical device layer on the surface of the optical device substrate, and depositing the dopant material into the optical device layer to form the doped optical device film. Depositing the optical device material includes: providing a first power level to the optical device material target to deposit the optical device layer at a first deposition rate. Depositing the dopant material into the optical device layer includes: providing a second power level to the dielectric target to deposit the dielectric target at a second deposition rate. The first deposition rate and the second deposition rate are different.

[0006] In another embodiment, a method is provided. The method includes disposing an optical device substrate in a chamber that includes a target having a pre-doped optical device material. The pre-doped optical device material includes a first concentration of optical device material and a second concentration of dopant material. Power is provided to the target to deposit a doped amorphous optical device layer on the optical device structure.

[0007] In another embodiment, a method is provided. The method includes disposing an optical device substrate on a substrate support. The substrate support is disposed in a chamber. The chamber includes an optical device material target disposed in the chamber and a dielectric target disposed in the chamber. The optical device material target includes a metallic material and the dielectric target includes a dopant material. A doped optical device film is deposited on the optical device substrate. Depositing the doped optical device film includes: depositing the optical device material to form an optical device layer on the surface of the optical device substrate, and depositing the dopant material into the optical device layer to form the doped optical device film. Depositing the optical device material includes: providing a first power level to the optical device material target and providing an oxygen-containing gas to the chamber to deposit the optical device layer at a first deposition rate. Depositing the dopant material into the optical device layer includes: providing a second power level to the dielectric target to deposit the dielectric target at a second deposition rate. The first deposition rate is different from the second deposition rate.

[0008] In yet another embodiment, an optical device is provided. The optical device includes an amorphous optical device layer disposed above the surface of an optical device substrate. The amorphous optical device layer includes an amorphous optical device material and a dopant material, wherein the dopant material is incorporated into the amorphous optical device material. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to enable a manner of understanding the above-described features of the present disclosure in detail, a more particular description of the present disclosure briefly summarized above may be obtained by reference to the embodiments, some of which are illustrated in the drawings. However, it will be noted that the drawings only illustrate exemplary embodiments and are therefore not considered to limit its scope, and other equally effective embodiments are allowed.

[0010] Figure 1 is a cross-sectional view of an optical device including a doped optical device film disposed on an optical device substrate according to an embodiment.

[0011] Figure 2A is a schematic cross-sectional view of a binary optical device structure disposed on an optical device substrate according to an embodiment.

[0012] Figure 2B is a schematic cross-sectional view of an angled optical device structure disposed on an optical device substrate according to an embodiment.

[0013] Figure 3 is a schematic cross-sectional view of a physical vapor deposition (PVD) processing chamber according to an embodiment.

[0014] Figure 4 is a schematic cross-sectional view of a chemical vapor deposition (CVD) processing chamber according to an embodiment.

[0015] Figure 5 is a schematic top view of a cluster tool according to an embodiment.

[0016] Figure 6 is a flowchart of a method for manufacturing a doped optical device film according to an embodiment.

[0017] Figure 7 is a flowchart of a method for manufacturing a doped optical device film according to an embodiment.

[0018] Figure 8 is a flowchart of a method for manufacturing a doped optical device film according to an embodiment.

[0019] Figure 9 is a flowchart of a method for manufacturing a doped optical device film according to an embodiment.

[0020] For ease of understanding, the same reference numerals have been used, where possible, to identify common elements in the figures. It is contemplated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further recitation. Detailed Embodiments

[0021] The embodiments described herein relate to optical device manufacturing. Specifically, the embodiments described herein provide doped optical device films, optical devices having doped structures, and methods of forming doped optical device films and structures. The embodiments described herein provide doped optical device films and structures having an optical device layer with an optical device material having an optical device material concentration and a dopant material having a dopant concentration throughout the thickness of the doped optical device film and structure.

[0022] The optical device materials described and referenced herein have an optical device material refractive index of about 2.0 or greater. The dopant materials described and referenced herein have a dopant refractive index less than 2.0. Combined, the optical device material and the dopant materials uniformly distributed therein constitute a doped optical device film having an optical device refractive index of about 2.0 or greater. When the optical device material is oxidized, nitrided, or oxynitrided and deposited or flowed over an optical device substrate, an optical device layer is formed. In one embodiment that may be combined with other embodiments described herein, the optical device material includes uniformly distributed dopant materials.

[0023] In one embodiment that may be combined with other embodiments described herein, the optical device material is a metal-containing material. Metal-containing materials include, but are not limited to, metals, metal oxides, metal nitrides, or metal oxynitrides. In another embodiment that may be combined with other embodiments described herein, the optical device material is a semiconductor material. Semiconductor materials include, but are not limited to, silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, transparent conductive oxides, or combinations thereof. In other embodiments, the semiconductor material is an oxide, oxynitride, nitride, or carbide of silicon (Si), germanium (Ge), or silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, or transparent conductive oxides. Dopant materials include, but are not limited to, silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or hafnium (Hf), and oxides, nitrides, or oxynitrides thereof.

[0024] In one embodiment, a method includes disposing an optical device substrate on a substrate support disposed in a chamber. An optical device material is deposited to form an optical device layer over a surface of the optical device substrate. Depositing the optical device material includes: providing a first power level to an optical device material target to deposit the optical device material at a first deposition rate. Dopant materials are uniformly deposited into the optical device layer to form a doped optical device film. Depositing the dopant materials includes: providing a second power level to a dielectric target to deposit the dopant materials at a second deposition rate.

[0025] Figure 1is a cross-sectional view of an optical device 100. According to the embodiments described herein, a doped optical device film 101 is disposed above a surface 103 of an optical device substrate 102. The doped optical device film 101 is formed by the methods 600, 700, 800, and 900 described herein. The optical device substrate 102 is any suitable optical device substrate on which an optical device can be formed. In one embodiment, the optical device substrate 102 includes, but is not limited to, silicon (Si), silicon nitride (SiN), silicon dioxide (SiO 2 ), fused silica, quartz, silicon carbide (SiC), germanium (Ge), silicon germanium (SiGe), indium phosphide (InP), gallium arsenide (GaAs), gallium oxide (GaO), diamond, lithium niobate (LiNbO 3 ), gallium nitride (GaN), sapphire, tantalum oxide (Ta 2 O 5 ), titanium dioxide (TiO 2 ), or a combination of the above. The optical device substrate 102 may include an optically transparent perovskite material.

[0026] The doped optical device film 101 includes an optical device layer that includes an optical device material. The doped optical device film 101 also includes a dopant material distributed within the optical device layer. The doped optical device film 101 is amorphous in order to achieve optical properties including a uniform refractive index greater than about 2.0 and low absorption losses. The optical device layer is formed when the optical device material is oxidized, nitrided, or oxynitrided and deposited or flowed above the optical device substrate 102. Examples of the doped optical device film 101 that can be formed by the reaction of the optical device material with the dopant material include, but are not limited to, tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), indium oxide (In 2 O 3 ), or hafnium oxide (HfO 2 ).

[0027] The doped optical device film 101 has a thickness 110. The thickness 110 is divided into a plurality of regions 115 within a certain range. In one embodiment that can be combined with other embodiments described herein, the thickness 110 has a uniform or substantially uniform dopant material distribution throughout the range of the plurality of regions 115. In one embodiment, the doped optical device film 101 includes an optical device refractive index greater than about 2.0 that is uniform throughout the thickness 110. In another embodiment, the doped optical device film 101 includes an optical device refractive index of about 2.6 to about 2.7 that is uniform throughout the thickness 110.

[0028] The dopant materials described and referenced herein have a dopant refractive index of less than 2.0. In combination, the optical device materials that make up the optical device layer and the dopant materials distributed therein constitute a doped optical device film 101 having an optical device refractive index of about 2.0 or greater.

[0029] The doped optical device film 101 includes an optical device material at an optical device material concentration and a dopant material at a dopant material concentration. The optical device materials include one or both of a metal-containing material and a semiconductor material. Adjusting the optical device material concentration, the optical device material refractive index, the dopant material concentration, and the dopant material refractive index will determine the optical properties of the optical device film 101, such as the optical device refractive index.

[0030] In one embodiment that can be combined with other embodiments described herein, the doped optical device film 101 includes an optical device material concentration of about 85% to about 100% atomic percentage. In another embodiment that can be combined with other embodiments described herein, the doped optical device film 101 includes a dopant material at a dopant concentration ranging from about 0% to 15% atomic percentage. A dopant concentration of about 0 to about 50% affects the morphology of the doped optical device film 101 without a significant detrimental increase in the refractive index of the optical device layer.

[0031] To achieve the desired optical properties, the dopant materials can be distributed in the optical device layer and maintained within a temperature processing window. In some embodiments, the dopant materials are uniformly distributed in the optical device layer. The temperature processing window is a temperature range within which the optical device layer forms amorphous to achieve optical properties, including a uniform high refractive index and low absorption loss. In the absence of dopant materials, the optical device layer forms amorphous within a certain temperature processing window and forms a crystalline structure when the optical device layer exceeds that temperature processing window. The optical device layer without dopant materials forms amorphous within a temperature processing window of less than 30 °C and becomes crystalline at temperatures above 30 °C. As described in methods 600, 700, 800, and 900, dopant materials uniformly incorporated into the optical device layer inhibit the growth of the crystalline structure and expand the temperature processing window of the formed doped optical device film 101. An optical device layer having dopant materials uniformly incorporated into the optical device layer at a dopant concentration (e.g., 5% atomic percentage) will expand the temperature processing window within which this doped optical device film 101 forms amorphous to a temperature greater than about 30 °C, e.g., a temperature processing window between about 30 °C and 300 °C.

[0032] Figure 2A is a schematic cross-sectional view of a binary optical device structure 201a disposed on an optical device substrate 102. Figure 2BIt is a schematic cross-sectional view of an angled optical device structure 201b disposed on an optical device substrate 102. Optical devices 200a, 200b include optical device structures 201a, 201b disposed on a surface 103 of the optical device substrate 102. The optical device structures 201a, 201b can be formed, for example, by etching a doped optical device film 101, and the doped optical device film 101 is formed by the methods 600, 700, 800, and 900 described herein.

[0033] As shown by Figure 2A , the optical device structure 201a is a binary (i.e., perpendicular) structure. As Figure 2A shown, the optical device structure 201a includes a top surface 204 parallel to the surface 103 of the optical device substrate 102. The first sidewall 205 and the second sidewall 206 are parallel to the third sidewall 207 and the fourth sidewall 208. The sidewalls 205, 206, 207, and 208 are oriented orthogonally to the main axis of the optical device substrate 102.

[0034] As Figure 2B shown, the optical device structure 201b is an angled structure. As Figure 2B shown, the optical device structure 201b includes a first sidewall 205 and a second sidewall 206 parallel to the third sidewall 207 and the fourth sidewall 208. The sidewalls 205, 206, 207, and 208 are inclined with respect to the surface 103 of the optical device substrate 102.

[0035] The optical device structures 201a, 201b formed from the optical device film 101 include an optical device material of an optical device material concentration and a dopant material of a dopant material concentration distributed throughout the entire thickness 110 of the optical device film 101. The distribution of the dopant material throughout the entire thickness 110 provides a uniform refractive index greater than about 2.0 and low absorption loss.

[0036] Figure 3 It is a schematic cross-sectional view of a PVD chamber 300. It will be understood that the PVD chamber 300 described below is an exemplary PVD chamber, and other PVD chambers (including PVD chambers from other manufacturers) can be used or modified in conjunction with various aspects of the present disclosure to implement various aspects of the present disclosure. The PVD chamber 300 can be used in the methods 600, 700, 800, and 900 described herein.

[0037] The PVD chamber 300 is used to form a doped optical device film 101. The PVD chamber 300 includes a plurality of cathodes attached to a chamber body 308, the cathodes including at least one dielectric target cathode 302 and at least one optical device material target cathode 303 having a plurality of corresponding targets, the targets including at least one dielectric target 304 and at least one optical device material (e.g., metal or semiconductor) target 306. Although Figure 3 one dielectric target 304 and one optical device material target 306 are depicted, the PVD chamber 300 can include one or more dielectric targets 304 and / or one or more optical device material targets 306. For example, 3 to 5 targets selected from at least one of the dielectric target 304 or the optical device material target 306 can be included in the PVD chamber 300. In embodiments having one or more dielectric targets 304 and one or more optical device material targets 306, each dielectric target 304 is operable to deposit a different dopant material, and / or each optical device material target 306 is operable to deposit a different optical device material.

[0038] The PVD chamber 300 is configured to include a substrate support 310 having a support surface 312 for supporting an optical device substrate 102. The PVD chamber 300 includes an opening 334 (e.g., a slit valve) through which the optical device substrate can enter the processing volume 305.

[0039] In Figure 3 the illustrated embodiment, the substrate support 310 includes an RF bias power supply 314 coupled to a bias electrode 316 disposed in the substrate support 310. The PVD chamber 300 includes a sputtering gas source 336 that provides a sputtering gas (such as argon (Ar)). The PVD chamber 300 includes a reactive gas source 338 that provides a reactive gas (such as an oxygen-containing gas or a nitrogen-containing gas).

[0040] The substrate support 310 includes means (not shown), such as an electrostatic chuck, a vacuum chuck, a substrate fixing jig, or the like, for holding the optical device substrate 102 on the support surface 312 of the substrate support 310. The substrate support 310 is configured to include cooling conduits 318 disposed within the substrate support 310, wherein the cooling conduits 318 controllably cool the substrate support 310 and the optical device substrate 102 positioned thereon to a predetermined temperature, such as between about 30°C and about 300°C. The cooling conduits 318 are coupled to a cooling fluid source 320 to provide cooling fluid. The substrate support 310 is further configured to include a heater 322 embedded therein. The heater 322 (such as a resistive element) disposed within the substrate support 310 is coupled to an optional heater power supply 324 and controllably heats the substrate support 310 and the optical device substrate 102 positioned thereon to a predetermined temperature, such as between about 30°C and 300°C. Each target (e.g., dielectric target 304 or optical device material target 306) has a DC power supply 326 or an RF power supply 328 and an associated magnetron. The plurality of power supplies enable both DC-powered processes and RF-powered processes to occur in the same PVD chamber 300.

[0041] The PVD chamber 300 includes a process gas supplier 330 for supplying a predetermined process gas to the process volume 305 of the PVD chamber 300. For example, the process gas supplier 330 supplies an oxygen-containing gas to the process volume 305 to form an oxidation environment in the process volume 305. The PVD chamber 300 may also include a precursor gas source 332 controlled by a precursor gas flow controller 331 for supplying a precursor gas, such as a gaseous dopant precursor.

[0042] Figure 4 is a schematic cross-sectional view of a CVD chamber 400. It will be understood that the CVD chamber 400 described below is an exemplary CVD chamber, and other CVD chambers (including CVD chambers from other manufacturers) may be used with or modified to implement aspects of the present disclosure.

[0043] The CVD chamber 400 has a chamber body 408 that includes a processing volume 405 having a substrate support 410 disposed therein to support an optical device substrate 102 on the substrate support 410. The substrate support 410 includes a heating / cooling conduit 414 and means, such as an electrostatic chuck, a vacuum chuck, a substrate fixing jig, or the like, for holding the optical device substrate 102 on a support surface 412 of the substrate support 410. The substrate support 410 is coupled to the processing volume 405 and is movably disposed in the processing volume 405 by a rod 406 connected to a lift system (not shown) that moves the substrate support 410 between a raised processing position and a lowered position, which facilitates loading and unloading of the optical device substrate 102 through an opening 420 to and from the CVD chamber 400.

[0044] The CVD chamber 400 includes flow controllers 418a, 418b (such as mass flow control (MFC) devices) disposed between a first gas source 402, a second gas source 403, and the chamber body 408 to control the flow rate of process gases from the first gas source 402 and the second gas source 403 to a showerhead 404 for distributing the process gases throughout the processing volume 405. The first gas source 402 is operable to include an optical device material. The second gas source 403 is operable to include a dopant material. Although Figure 4 two gas sources 402, 403 are depicted, the CVD chamber 400 may include one or more first gas sources 402 and / or one or more second gas sources 403. For example, 3 to 5 gas sources selected from at least one of the first gas source 402 or the second gas source 403 may be included in the chamber 300. In embodiments having one or more first gas sources 402 and one or more second gas sources 403, each first gas source 402 is operable to deposit a different optical device material, and / or each second gas source 403 is operable to deposit a different dopant material.

[0045] The showerhead 404 is connected to an RF power source 416 via an RF feed 422 for generating a plasma from the process gases in the processing volume 405. The RF power source 416 provides RF energy to the showerhead 404 to facilitate generation of a plasma between the showerhead 404 and the substrate support 410. The rod 406 is configured to move the substrate support 410 to a raised processing position.

[0046] Figure 5It is a schematic diagram of a cluster tool 502 in a factory environment 501. It will be understood that the cluster tool 502 described herein is an exemplary cluster, and other cluster tools may be used in conjunction with or modified to implement aspects of the present disclosure. The cluster tool 502 described herein may be used in the methods 700, 800, 900 described herein.

[0047] The cluster tool 502 includes a transfer chamber 506 surrounded by one or more processing chambers 504. The processing chamber 504 may include any suitable type of processing chamber for forming the doped optical device film 101 described herein. In one embodiment that may be combined with other embodiments described herein, the processing chamber 504 may be a PVD chamber 300. In another embodiment that may be combined with other embodiments described herein, the processing chamber 504 may be a CVD chamber 400. In yet another embodiment that may be combined with other embodiments described herein, the processing chamber 504 may be a combination of a PVD chamber 300 and a CVD chamber 400.

[0048] In addition, the cluster tool 502 includes a substrate access chamber 508 coupled to a load lock chamber 510. In one embodiment, the substrate access chamber 508 may be used to connect the factory environment 501 at atmospheric pressure to the load lock chamber 510 under vacuum pressure. In one embodiment that may be combined with other embodiments described herein, the cluster tool 502 may be used for single-chamber processing, such as where the processing chamber 504 is a PVD chamber 300 having at least two targets (e.g., a dielectric target 304 or an optical device material target 306). In another embodiment that may be combined with other embodiments described herein, the cluster tool 502 may be used for multi-chamber processing, such as in the methods 600-900, where multiple processing chambers 504 are PVD chambers 300, CVD chambers 400, or a combination of both. The cluster tool 502 will transfer the optical device substrate 102 between multiple processing chambers 504 such that an optical device layer or dopant material can be deposited in each of a range of multiple regions 115 in each processing chamber 504. The optical device substrate will enter each processing chamber 504 through the openings 334, 420 of the PVD chamber 300 and the CVD chamber 400, respectively.

[0049] Figure 6 It is a flowchart of a method 600 for manufacturing a doped optical device film 101. For ease of explanation, Figure 6 reference will be made to Figure 3 the PVD chamber 300 of Figure 5 and the cluster tool 502 of Figure 3 However, it will be noted that a PVD chamber different from the Figure 3 PVD chamber 300 ofFigure 5 The cluster tool 502 of the cluster tool can be used in combination with the method 600. As described above, the cluster tool 502 can be utilized, where the processing chamber 504 is the PVD chamber 300. The method 600 deposits an optical device material onto the optical device substrate 102 to form an optical device layer. In one embodiment that can be combined with other embodiments described herein, the dopant material can be deposited uniformly throughout the entire thickness 110 of the optical device layer.

[0050] At operation 601, the optical device substrate 102 intended for coating is disposed on the substrate support in the PVD chamber 300. For example, the optical device substrate 102 is disposed on the substrate support 310.

[0051] At operation 602, the optical device material is deposited. The optical device material is deposited from one or more optical device material targets 306 to form an optical device layer above the optical device substrate 102. The optical device material is one or both of a metal-containing material and a semiconductor material. The optical device material is deposited via PVD processing. In one embodiment that can be combined with other embodiments described herein, the PVD processing is sputtering processing. In another embodiment that can be combined with other embodiments described herein, the PVD processing is evaporation processing.

[0052] In an embodiment, when the optical device material is a metal, when the deposited metal of one or more optical device material targets 306 reacts with a reactive gas to form an optical device layer above the optical device substrate 102, the optical device layer is formed. The reactive gas source 338 provides a reactive gas, such as an oxygen-containing gas or a nitrogen-containing gas. For example, an optical device material of pure titanium is deposited and reacts with a reactive gas (such as oxygen) to form titanium dioxide (TiO 2 ). In an embodiment, when the optical device material is a metal oxide, a metal nitride, or a metal oxynitride, when the optical device material is deposited above the optical device substrate 102, the optical device layer is formed. The optical device material target cathode 303 coupled to one or more optical device material targets 306 is set to a first power level so as to deposit the optical device material at a first deposition rate. When the first power level is applied, the first power level can be kept constant in operations 602 and 603. The PVD chamber 300 can include one or more optical device material targets 306. For example, 3 to 5 targets selected from at least one of the optical device material targets 306 can be included in the PVD chamber 300. In embodiments having one or more optical device material targets 306, each optical device material target 306 is operable to deposit a different optical device material.

[0053] The first power level of the target cathode ranges from about 0% to about 100%. For example, the first power level of the target cathode is about 80% and the corresponding first deposition rate is about 0.35 nm / s. In one embodiment, the optical device layer includes an optical device material concentration of about 85% to about 100 atomic percent. In one embodiment, the optical device material includes a first refractive index. The first refractive index is greater than 2.0. For example, the first refractive index is between about 2.0 and about 2.8. In an embodiment, when the optical device material is a metal-containing material, the metal-containing material includes, but is not limited to, metals, metal oxides, metal nitrides, or metal oxynitrides, such as titanium dioxide (TiO 2 )、 tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), indium oxide (In 2 O 3 ), or hafnium oxide (HfO 2 ). In an embodiment, when the optical device material is a semiconductor material, the semiconductor material includes, but is not limited to, silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, transparent conductive oxides, or combinations thereof. In other embodiments, the semiconductor material is an oxide, oxynitride, nitride, or carbide of Si, Ge, SiGe, III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, or transparent conductive oxides.

[0054] At operation 603, a dopant material is deposited. The dopant material is deposited from the dielectric target 304 to form a doped optical device film 101 on the optical device substrate 102. In one embodiment that may be combined with other embodiments described herein, the dopant material is deposited such that it is uniformly concentrated in the optical device layer to form one or more regions of the doped optical device film 101. The dielectric target cathode 302 coupled to the dielectric target 304 is set to a second power level in order to deposit the dopant material at a second deposition rate. The second power level of the dielectric target cathode 302 ranges between about 0% and about 100%. For example, the second power level of the dielectric target cathode 302 is about 80% and the second deposition rate is about 0.35 nm / s. In one embodiment, the doped optical device film 101 includes a dopant material having a dopant concentration from about 0% to 15% atomic percentage. The dopant material includes, but is not limited to, silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or hafnium (Hf), and the oxides, nitrides, or oxynitrides thereof. The PVD chamber 300 may include one or more dielectric targets 304. For example, 3 to 5 targets selected from at least one of the dielectric targets 304 may be included in the PVD chamber 300. In embodiments having one or more dielectric targets 304, each dielectric target 304 is operable to deposit a different dopant material.

[0055] In one embodiment that may be combined with other embodiments described herein, operations 602 and 603 are repeated with a time interval of applying the first power level to the optical device material target cathode 303 and a time interval of applying the second power level to the dielectric target cathode 302 in sequence. In another embodiment, depositing the dopant material at the second power level is performed by pulsing the second power level at a set frequency while depositing the optical device material. In yet another embodiment that may be combined with other embodiments described herein, the optical device material and the dopant material are simultaneously deposited by applying the first power level and the second power level to the targets (e.g., the dielectric target 304 or the optical device material target 306) simultaneously to form the doped optical device film 101.

[0056] In one embodiment, which can be combined with other embodiments described herein, a single execution of operations 602 and 603 forms all of the regions 115 within a range of regions. In another embodiment, a single execution of operations 602 and 603 forms a portion of the doped optical device film 101, where the portion can correspond to one or more of the regions 115 within a range of regions. Each region within the range of regions 115 can be every 20 nm to 25 nm of thickness 110. Operations 602 and 603 are repeated until a predetermined thickness 110 is reached. In one embodiment, which can be combined with other embodiments described herein, operations 602 and 603 can be performed in a PVD chamber 300 having at least two targets (e.g., dielectric target 304 or optical device material target 306). In another embodiment, which can be combined with other embodiments described herein, operations 602 and 603 can be performed in multiple processing chambers 504 of a cluster tool 502. For example, the optical device substrate 102 is transferred between at least two processing chambers 504. At least one of the processing chambers 504 is a PVD chamber 300 including an optical device material target 306, and at least another of the processing chambers 504 is a PVD chamber 300 including a dielectric target 302.

[0057] Figure 7 is a flow chart of a method 700 for fabricating a doped optical device film 101. For ease of explanation, Figure 7 will be described with reference to Figure 3 the PVD chamber 300 and Figure 5 the cluster tool 502. However, it will be noted that PVD chambers different from Figure 3 the PVD chamber 300 can be used in combination with method 700. It will also be noted that cluster tools different from Figure 5 the cluster tool 502 can be used in combination with method 700. As described above, the cluster tool 502 can be utilized, where the processing chambers 504 are PVD chambers 300.

[0058] At operation 701, an optical device substrate 102 intended for coating is disposed on a substrate support within the PVD chamber 300. For example, the optical device substrate 102 is disposed on the substrate support 310.

[0059] At operation 702, a pre-doped optical device material is deposited. The pre-doped optical device material is deposited from one or more optical device material targets 306 to form one or more regions 115 of a doped optical device film 101 above the optical device substrate 102. The pre-doped optical device material includes an optical device material and a dopant material. The pre-doped optical device material may include one or both of a metal-containing material or a semiconductor material. The metal-containing material includes, but is not limited to, a metal, a metal oxide, a metal nitride, or a metal oxynitride, such as titanium dioxide (TiO 2 )、tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), indium oxide (In 2 O 3 ), or hafnium oxide (HfO 2 ). The semiconductor material includes, but is not limited to, silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, transparent conductive oxides, or combinations thereof. In other embodiments, the semiconductor material is an oxide, oxynitride, nitride, or carbide of Si, Ge, SiGe, III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, or transparent conductive oxides.

[0060] In embodiments where the pre-doped optical device material is a metal, the deposited metal reacts with a reactive gas to form one or more regions 115 of a doped optical device film 101 above the optical device substrate 102. The pre-doped optical device material further includes a dopant material, including, but not limited to, silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or hafnium (Hf), and oxides, nitrides, or oxynitrides thereof. In one embodiment, which may be combined with other embodiments described herein, the dopant material is uniformly pre-doped in the pre-doped optical device material. The PVD chamber 300 may include one or more optical device material targets 306. For example, 3 to 5 targets selected from at least one of the optical device material targets 306 may be included in the PVD chamber 300. In embodiments having one or more optical device material targets 306, each optical device material target 306 is operable to deposit a different pre-doped optical device material. In one embodiment, the pre-doped optical device material has a first refractive index. The first refractive index is greater than 2.0. For example, the first refractive index is between about 2.0 and about 2.8.

[0061] Set the optical device material target cathode 303 coupled to the optical device material target 306 to a first power level to deposit a pre-doped optical device material at a first deposition rate. When the first power level is applied, the first power level remains constant during operation 702. The pre-doped optical device material provided by the optical device material target 306 has a predetermined concentration, and the concentration of the pre-doped optical device material corresponds to the concentration of the doped optical device film 101. In one embodiment that can be combined with other embodiments described herein, the pre-doped optical device material includes a dopant material with an optical device material concentration of about 85% to about 100 atomic percent and a dopant material concentration of from about 0% to 15 atomic percent. For example, the pre-doped optical device material is titanium dioxide (TiO 2 ) optical device material, in which there is a 5 atomic percent dopant material, such as silicon dioxide (SiO 2 ). In one embodiment, the deposition temperature of the pre-doped optical device material is maintained at about 270 °C or lower to prevent the formation of titanium dioxide (TiO 2 ) grains in the doped optical device film 101.

[0062] In another embodiment that can be combined with other embodiments described herein, a single application of operation 702 forms all regions within a range of multiple regions 115. In another embodiment, repeating operation 702 forms a portion of the doped optical device film 101, where the portion can correspond to one or more regions within a range of multiple regions 115.

[0063] In yet another embodiment that can be combined with other embodiments described herein, one or more optical device material targets 306 are operable to deposit a pre-doped metal-containing material and a pre-doped semiconductor material. The pre-doped metal-containing material and the pre-doped semiconductor material can be deposited simultaneously to form a range of multiple regions 115. The pre-doped metal-containing material and the pre-doped semiconductor material can be deposited from the same optical device material target 306 or different optical device material targets 306, respectively.

[0064] In yet another embodiment that can be combined with other embodiments described herein, one or more optical device material targets 306 are operable to deposit a pre-doped metal-containing material from two or more optical device material targets 306 to form a range of multiple regions 115. The pre-doped metal-containing material can be deposited from the same optical device material target 306 or different optical device material targets 306, respectively.

[0065] Figure 8 is a flowchart of an exemplary method 800 for manufacturing a doped optical device film 101. For ease of explanation,Figure 8 will refer to Figure 3 the PVD chamber 300 of Figure 4 the CVD chamber 400 of Figure 5 and the cluster tool 502 of will be described. However, it will be noted that, different from the PVD chamber 300 of Figure 3 a PVD chamber can be used in combination with method 800. It will be noted that, different from the CVD chamber 400 of Figure 4 a CVD chamber can be used in combination with method 800. It will also be noted that, different from the cluster tool 502 of Figure 5 a cluster tool can be used in combination with method 800. As described above, the cluster tool 502 can be utilized, where the processing chamber 504 is the PVD chamber 300 or the CVD chamber 400. In one embodiment, the processing chamber is a modified PVD chamber, e.g., a modified version of the PVD chamber 300 described in Figure 3 equipped to supply dopant precursors, e.g., dopant precursors supplied from a precursor gas source 332 controlled by a precursor gas flow controller 331.

[0066] At operation 801, a substrate intended for coating is set on a substrate support in the PVD chamber 300. For example, the optical device substrate 102 is set on the substrate support 310.

[0067] At operation 802, an optical device material is deposited. The optical device material is deposited from one or more optical device material targets 306 to form an optical device layer over the optical device substrate 102. The optical device material can include one or both of a metal-containing material or a semiconductor material. In one embodiment of operation 802, the processing chamber is a PVD chamber, e.g., Figure 3 the multi-cathode PVD chamber in and includes an optical device material target cathode 303. The optical device material target cathode 303 operates at a first power level, thereby depositing the optical device material at a first deposition rate. The optical device material is deposited on the surface of the optical device substrate 102 by setting the optical device material target cathode 303 to the first power level so as to deposit at the first deposition rate to form the optical device layer. For example, the first power level of the optical device material target cathode 303 ranges from about 0% to about 100%. For example, the first power level of the optical device material target cathode 303 is about 80% and the first deposition rate is about 0.35 nm / s. The PVD chamber 300 can include one or more optical device material targets 306. For example, 3 to 5 targets selected from at least one of the optical device material targets 306 can be included in the PVD chamber 300. In embodiments having one or more optical device material targets 306, each optical device material target 306 is operable to deposit a different optical device material.

[0068] The optical device layer includes an optical device material having an optical device material concentration. For example, the optical device material concentration is from about 85% to 100% atomic percentage. In one embodiment, the optical device material includes a first refractive index. The first refractive index is greater than 2.0. For example, the first refractive index is between about 2.0 and about 2.8.

[0069] At operation 803, a dopant precursor is flowed. The dopant precursor includes a dopant material flowed from a precursor gas source 332 corresponding to the PVD chamber 300 or from a second gas source 403 corresponding to the CVD chamber 400. The dopant precursor is flowed in to form a doped optical device film 101 on the optical device substrate 102. The dopant precursor includes, but is not limited to, silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or hafnium (Hf), and oxides, nitrides, or oxynitrides thereof. In one embodiment that may be combined with other embodiments described herein, the dopant precursor is flowed in such that it is uniformly concentrated in the optical device layer to form one or more regions of the doped optical device film 101. The optical device material reacts with the dopant precursor to form the doped optical device film 101 on the surface of the optical device substrate 102.

[0070] The dopant precursor is flowed at a second power level in order to deposit the dopant precursor at a flow rate. In one embodiment that may be combined with other embodiments described herein, the precursor gas flow controller 331 coupled to the precursor gas source 332 is set to the second power level. In another embodiment that may be combined with other embodiments described herein, the second flow controller 418b coupled to the second gas source 403 is set to the first power level. The PVD chamber 300 may include one or more precursor gas sources 332. For example, 3 to 5 precursor gas sources 332 may be included in the PVD chamber 300. In embodiments having one or more precursor gas sources 332, each optical device material target 306 is operable to deposit a different optical device material. The CVD chamber 400 may include one or more second gas sources 403. For example, 3 to 5 second gas sources 403 may be included in the CVD chamber 400. In embodiments having one or more second gas sources 403, each second gas source 403 is operable to deposit a different dopant precursor.

[0071] In one embodiment, which can be combined with other embodiments described herein, the deposition rate of the optical device material is greater than the deposition rate of the dopant precursor, such that the dopant material has a lower concentration in the doped optical device film 101 than the optical device material. When the second power level is applied, the second power level remains constant throughout operation 803. In one embodiment, which can be combined with other embodiments described herein, the first power level and the second power level can be different. The optical device material provided by the optical device material target 306 and the dopant precursor provided by the precursor gas source 332 or the second gas source 403 have a predetermined concentration, and the combined concentration of the optical device material and the dopant material corresponds to the concentration of the doped optical device film 101. In one embodiment, which can be combined with other embodiments described herein, the optical device material includes an optical device material concentration of about 85% to about 100% atomic percentage, while the dopant precursor includes a dopant material concentration of from about 0% to 15% atomic percentage.

[0072] In one embodiment, which can be combined with other embodiments described herein, operations 802 and 803 are repeated for the time intervals of applying the first power level to the optical device material target cathode 303 and applying the second power level to the precursor gas flow controller 331 or the second flow controller 418b. In another embodiment, flowing the dopant precursor at the second power level is performed by pulsing the second power level at a set frequency while depositing the metal optical device material. In yet another embodiment, which can be combined with other embodiments described herein, the optical device material is deposited and the dopant precursor is flowed simultaneously by applying the first power level and the second power level simultaneously, thereby forming the doped optical device film 101.

[0073] In one embodiment, which can be combined with other embodiments described herein, performing operations 802 and 803 once forms all of the regions in a range of multiple regions 115 of the doped optical device film 101. In another embodiment, performing operations 802 and 803 once forms a portion of the doped optical device film 101, which portion can correspond to one or more of the regions in a range of multiple regions 115. Each of the regions in the range of multiple regions 115 can be every 20 nm to 25 nm of the thickness 110. Operations 802 and 803 are repeated until the predetermined thickness 110 of the doped optical device film 101 is reached.

[0074] In one embodiment, which can be combined with other embodiments described herein, operations 802 and 803 can be performed in a PVD chamber 300 having at least an optical device material target 306 and a precursor gas source 332. In another embodiment, which can be combined with other embodiments described herein, operations 801 and 802 can be performed in multiple processing chambers 504 of a cluster tool 502. For example, the optical device substrate 102 is transferred between at least two processing chambers 504. At least one of the processing chambers 504 is a PVD chamber 300 including an optical device material target 306, and at least another of the processing chambers 504 is a PVD chamber 300 including a precursor gas source 332. In yet another example, at least one of the processing chambers 504 is a PVD chamber 300 including an optical device material target 306, and at least another of the processing chambers 504 is a CVD chamber 400 including a second gas source 403.

[0075] Figure 9 is a flow chart of an exemplary method 900 for manufacturing a doped optical device film 101. For ease of explanation, Figure 9 will be described with reference to Figure 4 the CVD chamber 400 and Figure 5 the cluster tool 502. However, it will be noted that CVD chambers different from Figure 4 the CVD chamber 400 can be used in combination with method 900. It will also be noted that cluster tools different from Figure 5 the cluster tool 502 can be used in combination with method 900. As described above, the cluster tool 502 can be utilized, where the processing chamber 504 is a CVD chamber 400.

[0076] At operation 901, a substrate intended for coating is disposed on a substrate support in the CVD chamber 400. For example, the optical device substrate 102 is disposed on the substrate support 410.

[0077] At operation 902, an optical device material precursor is flowed. The optical device material precursor contains an optical device material that flows in from the first gas source 402 to form an optical device layer above the optical device substrate 102. The optical device material can include one or both of a metal-containing material or a semiconductor material. Metal-containing precursors include, but are not limited to, metals, metal oxides, metal nitrides, or metal oxynitrides, such as titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), indium oxide (In 2 O 3 ), or hafnium oxide (HfO 2)。Semiconductor precursors include, but are not limited to, silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, transparent conductive oxides, or combinations thereof. In other embodiments, the semiconductor precursor is an oxide, oxynitride, nitride, or carbide of Si, Ge, or SiGe, a III-V semiconductor, a II-IV semiconductor, a ternary semiconductor, a quaternary semiconductor, or a transparent conductive oxide.

[0078] In an embodiment, when the optical device material is a metal, an optical device layer is formed when the flowing metal of the first gas source 402 reacts with a reaction gas to form an optical device layer over the optical device substrate 102. In an embodiment, when the optical device material is a metal oxide, metal nitride, or metal oxynitride, an optical device layer is formed when the optical device material flows over the optical device substrate 102. The first flow controller 418a coupled to the first gas source 402 is set to a first power level so as to flow the optical device material precursor at a flow rate. When the first power level is applied, the first power position remains constant in operations 902 and 903. The CVD chamber 400 may include one or more first gas sources 402. For example, 3 to 5 first gas sources 402 may be included in the chamber 300. Each first gas source 402 is operable to deposit a different optical device material. The CVD chamber 400 may include one or more second gas sources 403. For example, 3 to 5 second gas sources 403 may be included in the CVD chamber 400. In embodiments having one or more second gas sources 403, each second gas source 403 is operable to deposit a different dopant precursor.

[0079] At operation 903, a dopant precursor is flowed. The dopant precursor includes a dopant material flowing in from the second gas source 403. The dopant precursor is flowed to form a doped optical device film 101 on the optical device substrate 102. Dopant precursors include, but are not limited to, silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), or hafnium (Hf), and oxides, nitrides, or oxynitrides thereof. In one embodiment, which may be combined with other embodiments described herein, the dopant precursor is flowed such that it is uniformly concentrated in the optical device layer to form one or more regions of the doped optical device film 101. In an embodiment, when the optical device material precursor is a titanium precursor and the dopant precursor is oxygen (O 2 )), the metal-containing precursor reacts with the precursor to form titanium dioxide (TiO 2 ).

[0080] The dopant precursor flows in at the second power level in order to deposit the dopant material at a flow rate. In one embodiment, which can be combined with other embodiments described herein, the second flow controller 418b coupled to the second gas source 403 is set to the second power level. In one embodiment, which can be combined with other embodiments described herein, the flow rate of the optical device material precursor is greater than the flow rate of the dopant precursor, such that the dopant material has a lower concentration in the doped optical device film 101 than the optical device material. When the second power level is applied, the second power level remains constant during operation 903. In one embodiment, which can be combined with other embodiments described herein, the first power level and the second power level can be different. The optical device material precursor provided by the first gas source 402 and the dopant precursor provided by the second gas source 403 have a predetermined concentration, and the combined concentration of the optical device material and the dopant material corresponds to the concentration of the doped optical device film 101. In one embodiment, which can be combined with other embodiments described herein, the optical device material precursor includes an optical device material concentration of from about 85% to about 100% atomic percentage, and the dopant precursor includes a dopant material concentration of from about 0% to 15% atomic percentage. The CVD chamber 400 can include one or more second gas sources 403. For example, 3 to 5 second gas sources 403 can be included in the chamber 300. Each second gas source 403 is operable to deposit a different dopant precursor.

[0081] In one embodiment, which can be combined with other embodiments described herein, operations 902 and 903 are repeated for the time intervals in which the first power level is applied to the first flow controller 418a and the second power level is applied to the second flow controller 418b. In another embodiment, flowing the dopant precursor at the second power level is performed by pulsing the second power level at a set frequency while flowing the optical device material precursor. In yet another embodiment, which can be combined with other embodiments described herein, the optical device material precursor and the dopant precursor are flowed simultaneously by applying the first power level and the second power level simultaneously to form the doped optical device film 101.

[0082] In one embodiment, which can be combined with other embodiments described herein, a single execution of operations 902 and 903 forms all of a range of multiple regions 115 in the doped optical device film 101. In another embodiment, a single execution of operations 902 and 903 forms a portion of the doped optical device film 101 that can correspond to one or more of a range of multiple regions 115. Operations 902 and 903 are repeated until a predetermined thickness 110 of the doped optical device film 101 is reached. In one embodiment, which can be combined with other embodiments described herein, operations 902 and 903 can be performed in a CVD chamber 400 having at least a first gas source 402 and a second gas source 403. In another embodiment, which can be combined with other embodiments described herein, operations 902 and 903 can be performed in multiple processing chambers 504 of a cluster tool 502. For example, the optical device substrate 102 is transferred between at least two processing chambers 504. At least one of the processing chambers 504 is a CVD chamber 400 including an optical device material target, and at least another of the processing chambers 504 is a CVD chamber 400 including a second gas source 403.

[0083] In one embodiment, the doped optical device film 101 of methods 600 - 900 is maintained at a temperature within a range that enables the doped optical device film 101 to remain amorphous. In embodiments that can be combined with other embodiments described herein, throughout methods 600 - 900, the doped optical device film 101 is maintained within this temperature range. In one embodiment, the optical device substrate 102 is maintained at a temperature greater than about 30 °C, such as between about 30 °C and 300 °C. In one embodiment, the substrate supports 310, 410 and the optical device substrate 102 are cooled by using cooling conduits 318, 414 to maintain the temperature. For example, a cooling fluid flows through the cooling conduit 318 disposed in the substrate support 310. In one embodiment, the substrate supports 310, 410 and the optical device substrate 102 are heated by using a heater 322 or a heating conduit 414 to maintain the temperature.

[0084] In methods 600 - 900, the optical device material is exposed to a processing temperature of about 30 °C or higher. The dopant material incorporated into the optical device layer enables the doped optical device film 101 to form amorously at a temperature greater than about 30 °C (such as between about 100 °C and about 300 °C). When the dopant material is incorporated into the optical device layer, the optical device material with the dopant material forms amorously, where the dopant material modifies the composition of the optical device material and interrupts the formation of crystal structures in the optical device layer that would otherwise form above a certain temperature specific to the optical device material. For example, titanium dioxide (TiO 2)Polycrystalline titanium dioxide (TiO 2 ) can be formed at or between temperatures of 30 °C to 200 °C, and distinct crystals can be formed at temperatures of 200 °C or above.

[0085] In summary, improved methods and materials for forming doped optical device films 101 having optical properties including uniform high refractive index and low absorption loss are described herein. To achieve the desired optical properties, the dopant material is distributed in the optical device layer at a dopant concentration, and the doped optical device film is maintained within a temperature processing window that enables the doped optical device film to form amorphous (i.e., without forming a crystal structure). The dopant material with the dopant concentration expands the temperature processing window of the doped optical device film. The dopant material modifies the composition of the optical device layer such that crystal formation is interrupted at a given temperature. For example, in the case where the optical device layer has a dopant material uniformly distributed therein, crystal formation is interrupted at temperatures between about 30 °C and 300 °C. A 0 - 50% concentration of dopant atoms of the dopant material affects the morphology of the doped optical device film without a significant detrimental increase in the refractive index of the optical device layer.

[0086] Although the foregoing relates to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from its basic scope, and its scope is determined by the appended claims.

Claims

1. A method comprising the following steps: Providing an optical device substrate on a substrate support, the substrate support being disposed in a chamber, the chamber comprising: An optical device material target disposed in the chamber, the optical device material target comprising an optical device material, wherein the optical device material comprises one or both of the following: A metal-containing material, the metal-containing material comprising tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), indium oxide (In 2 O 3 ), or hafnium oxide (HfO 2 ) ； And A semiconductor material, the semiconductor material comprising silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, and transparent conductive oxides; And A dielectric target disposed in the chamber, the dielectric target comprising a dopant material, wherein the dopant material comprises: Silicon (Si), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), hafnium (Hf), or oxides thereof, wherein the dopant material is different from the optical device material; and Depositing a doped amorphous optical device film on the optical device substrate, the doped amorphous optical device film having a plurality of regions extending perpendicularly from the surface of the optical device substrate to the top surface of the doped amorphous optical device film, comprising the following steps: Depositing the optical device material to form an optical device layer on the surface of the optical device substrate, the step of depositing the optical device material comprising the following steps: Providing a first power level of a DC power supply to the optical device material target, thereby depositing the optical device material at a first deposition rate; And Depositing the dopant material into the plurality of regions of the optical device layer to form the doped amorphous optical device film, the step of depositing the dopant material comprising the following steps: Providing a second power level of an RF power supply to the dielectric target, thereby depositing the dopant material at a second deposition rate, wherein the dopant material is distributed in each of the plurality of regions, and wherein the first deposition rate is different from the second deposition rate.

2. The method according to claim 1, further comprising the following step: Maintaining the optical device substrate at a temperature greater than 30 °C during the deposition of the optical device material and the deposition of the dopant material.

3. The method according to claim 1, further comprising the following step: Oxidizing the surface of the optical device substrate.

4. The method according to claim 1, wherein the steps of depositing the optical device material and depositing the dopant material are performed sequentially.

5. The method according to claim 1, wherein the step of depositing the dopant material at the second power level is performed by pulsing the second power level at a set frequency while depositing the optical device material.

6. The method according to claim 1, wherein the doped amorphous optical device film comprises the dopant material with a dopant concentration of 0% to 15% atomic percentage.

7. A method comprising the following steps: An optical device substrate is disposed in a chamber, the chamber containing one or more targets, each of the one or more targets having a pre-doped optical device material, the pre-doped optical device material comprising: a first concentration of optical device material; and a second concentration of dopant material; and Power is supplied to the target to deposit a doped amorphous optical device film on the optical device substrate, the doped amorphous optical device film having a plurality of regions extending perpendicularly from the surface of the optical device substrate to the top surface of the doped amorphous optical device film, wherein the dopant material is distributed in each of the plurality of regions, and wherein the optical device substrate is maintained at a temperature greater than 30 °C during deposition of the doped amorphous optical device film. wherein the optical device material comprises one or both of the following: A metal-containing material, the metal-containing material comprising titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), indium oxide (In 2 O 3 ), or hafnium oxide (HfO 2 ); and a semiconductor material comprising silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, and transparent conductive oxides; and wherein the dopant material comprises: silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), hafnium (Hf), or oxides thereof, wherein the dopant material is different from the optical device material.

8. A method comprising the steps of: disposing an optical device substrate in a chamber; flowing an optical device material precursor comprising an optical device material into the chamber at a first flow rate to deposit an optical device layer on the surface of the optical device substrate ； and flowing a dopant precursor comprising a dopant material into the chamber at a second flow rate to form a doped amorphous optical device film on the optical device substrate, the doped amorphous optical device film having a plurality of regions extending perpendicularly from the surface of the optical device substrate to the top surface of the doped amorphous optical device film, wherein the dopant material is distributed in each of the plurality of regions, and wherein the optical device substrate is maintained at a temperature greater than 30 °C during deposition of the optical device layer and while flowing the dopant precursor. wherein the optical device material comprises one or both of the following: A metal-containing material, the metal-containing material comprising titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), indium oxide (In 2 O 3 ), or hafnium oxide (HfO 2 ); and a semiconductor material comprising silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, and transparent conductive oxides; and wherein the dopant material comprises: silicon (Si), aluminum (Al), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), hafnium (Hf), or oxides thereof, wherein the dopant material is different from the optical device material.

9. The method of claim 8, wherein the step of flowing the optical device material precursor into the chamber comprises the step of introducing an oxygen-containing precursor into the chamber.

10. The method according to claim 9, wherein the optical device material precursor is a titanium precursor.

11. The method according to claim 8, wherein the dopant precursor is silane (SiH 4 ).

12. The method according to claim 8, wherein the dopant precursor is deposited in the doped amorphous optical device film at a concentration of 0% to 15% atomic percentage.

13. A method comprising the steps of: Providing an optical device substrate on a substrate support, the substrate support being disposed in a chamber, the chamber comprising: An optical device material target disposed in the chamber, the optical device material target comprising an optical device material, wherein the optical device material comprises one or both of the following: A metal-containing material, the metal-containing material comprising tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), indium oxide (In 2 O 3 ), or hafnium oxide (HfO 2 ) ； And A semiconductor material, the semiconductor material comprising silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, and transparent conductive oxides; And A dielectric target disposed in the chamber, the dielectric target comprising a dopant material, wherein the dopant material comprises: Silicon (Si), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), hafnium (Hf), or oxides thereof, wherein the dopant material is different from the optical device material; Depositing a doped amorphous optical device film on the optical device substrate, the doped amorphous optical device film having a plurality of regions in a range extending perpendicularly from the surface of the optical device substrate to the top surface of the doped amorphous optical device film, comprising the steps of: Depositing the optical device material to form an optical device layer on the surface of the optical device substrate, the step of depositing the optical device material comprising the steps of: providing a first power level to the optical device material target and providing an oxygen-containing gas to the chamber, thereby depositing the optical device layer at a first deposition rate; And Depositing the dopant material into the plurality of regions in the range of the optical device layer to form the doped amorphous optical device film, the step of depositing the dopant material comprising the steps of: providing a second power level to the dielectric target, thereby depositing the dopant material at a second deposition rate, wherein the dopant material is distributed in each of the plurality of regions in the range, wherein the first deposition rate is different from the second deposition rate.

14. An optical device comprising: A doped amorphous optical device film disposed above the surface of an optical device substrate, the doped amorphous optical device film comprising: A plurality of regions in a range, the plurality of regions in the range extending perpendicularly from the surface of the optical device substrate to the top surface of the doped amorphous optical device film; An amorphous optical device material, wherein the amorphous optical device material comprises one or both of the following: A metal-containing material, the metal-containing material comprising tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), indium oxide (In 2 O 3 ), or hafnium oxide (HfO 2 ); And A semiconductor material, the semiconductor material comprising silicon (Si), germanium (Ge), silicon germanium (SiGe), III-V semiconductors, II-IV semiconductors, ternary semiconductors, quaternary semiconductors, and transparent conductive oxides; And A dopant material, wherein the dopant material is incorporated into the amorphous optical device material, wherein the dopant material is distributed in each of a plurality of regions within a certain range, and wherein the dopant material comprises: Silicon (Si), niobium (Nb), titanium (Ti), tantalum (Ta), zirconium (Zr), indium (In), hafnium (Hf), or oxides thereof, wherein the dopant material is different from the optical device material.

15. The optical device according to claim 14, wherein: The amorphous optical device material has a first refractive index; and The dopant material has a second refractive index, wherein the first refractive index is greater than the second refractive index.

16. The optical device according to claim 14, wherein in the doped amorphous optical device film, the dopant material has a concentration of 0% to 15% atomic percentage.

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