Methods, apparatus, media, and devices for determining a worst bias point for hot carrier effects

Abstract

The application provides a method, device, medium and equipment for determining a worst bias point of hot carrier effect, the method comprising: constructing a hot carrier effect model of an FDSOI device; determining parameter values of each model parameter in the hot carrier effect model, the model parameters comprising: a time power law, a first fitting parameter, a second fitting parameter, a process parameter, a threshold voltage, a drain voltage and a saturation drain voltage; creating an input netlist according to simulation requirements; simulating the hot carrier effect model based on the input netlist to determine a worst bias point of hot carrier effect; thus, the HCI effect of the FDSOI device can be simulated under the condition that each parameter (except the gate voltage) of the hot carrier effect model is known, the corresponding simulation result (the degradation amount of the threshold voltage) under different gate voltages is obtained, the worst bias point is determined according to the simulation result, and the performance of the FDSOI device can be effectively improved.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor device technology, and particularly relates to a method, apparatus, medium and device for determining the worst bias point of hot carrier effect. Background Technology

[0002] Moore's Law predicts that the number of devices integrated on an integrated circuit chip will quadruple every three years, while the device feature size will shrink by half. However, as the device feature size decreases, the voltage does not decrease proportionally, leading to an increase in the internal electric field strength and resulting in hot carrier injection (HCI). Under the influence of high-intensity longitudinal and transverse electric fields, charge carriers are continuously accelerated into hot carriers. Some of the lucky hot carriers will cross the Si-SiO2 interface, and some of them will be trapped in the oxide, causing parameters that indicate device reliability, such as threshold voltage, maximum transconductance, and saturation leakage current, to drift, thereby reducing the device's lifespan.

[0003] To improve device performance, it is necessary to determine the worst bias point of the HCI effect and then make technical improvements to the device based on the worst bias point.

[0004] In existing technologies, for devices without a body lead region, the gate current is typically measured for analysis. However, in actual measurements, for fully depleted silicon-on-insulator (FDSOI) devices with short channel lengths, the gate current increases continuously with increasing gate voltage, making it impossible to measure the peak point and thus impossible to determine the worst-case bias point of the HCI effect. Summary of the Invention

[0005] To address the problems existing in the prior art, embodiments of the present invention provide a method, apparatus, medium, and device for determining the worst bias point of the hot carrier effect, thereby solving the technical problem that the worst bias point of the HCI effect cannot be determined in the prior art, resulting in the inability to effectively improve the performance of FDSOI devices.

[0006] This invention provides a method for determining the worst-case bias point of hot carrier effects, the method comprising:

[0007] Constructing a hot carrier effect model for FDSOI devices;

[0008] The parameter values ​​of each model parameter in the hot carrier effect model are determined. The model parameters include: time power law, first fitting parameter, second fitting parameter, process parameter, threshold voltage, leakage voltage and saturation leakage voltage.

[0009] An input netlist is created according to the simulation requirements. The input netlist is used to adjust the specific values ​​of each of the model parameters.

[0010] The hot carrier effect model is simulated based on the input netlist to determine the worst-case bias point of the hot carrier effect.

[0011] Optionally, the hot carrier effect model includes:

[0012] △Vth=A·exp(B(V ds -V dsat ))·(V gs -V th ) p ·t n Wherein, ΔVth is the threshold voltage V. th The degradation amount, where A is the process parameter, B is the first fitting parameter, and V is... ds The leakage voltage, V dsat The saturation leakage voltage, V gs denoted as gate voltage, p as the second fitting parameter, n as the time power law, and t as the time for applying stress.

[0013] Optionally, determining the parameter values ​​of each model parameter in the hot carrier effect model includes:

[0014] When the model parameters are the time power law, the logarithmic function of the carrier effect model is determined; the logarithmic function is lnΔVth=n ln t+ln(A·exp(B(V ds -V dsat ))·(V gs -V th ) p );

[0015] Plot the fitted curve between lnΔVth and ln t, and determine the slope of the fitted curve as the time power law n; where,

[0016] The ΔVth is the threshold voltage V. th The degradation amount, where A is the process parameter, B is the first fitting parameter, and V is... ds The leakage voltage, V dsat The saturation leakage voltage, V gs t is the gate voltage, p is the second fitting parameter, and t is the time for applying stress.

[0017] Optionally, determining the parameter values ​​of each model parameter in the hot carrier effect model includes:

[0018] When the model parameter is the first fitting parameter B, the gate voltage V gs With a fixed value, the first leakage voltage V at the same time was obtained. ds1 The corresponding first degradation amount ΔVth1 and second leakage voltage V are as follows: ds2 The corresponding second degradation amount ΔVth2; wherein ΔVth1=A·exp(B(V ds1 -V dsat ))·(V gs -V th ) p ·t n , △Vth2=A·exp(B(V ds2 -V dsat ))·(V gs -V th ) p ·t n ;

[0019] According to the formula Determine the first fitting parameter B.

[0020] Optionally, determining the parameter values ​​of each model parameter in the hot carrier effect model includes:

[0021] When the model parameter is the second fitting parameter p, the saturation leakage voltage V is at the first fitting parameter B. dsat The leakage voltage V ds and the threshold voltage V th When the value is fixed, obtain the first gate voltage V. gs1 Second gate voltage V gs2 First saturation leakage voltage V dsat1 Second saturation leakage voltage V dsat2 The value;

[0022] According to the formula Determine the second fitting parameter p.

[0023] Optionally, the hot carrier effect model is simulated based on the input netlist to determine the worst-case bias point of the hot carrier effect, including:

[0024] Control the leakage voltage V in the input netlist ds The gate voltage V is controlled to a fixed value. gs The hot carrier effect model is simulated by changing the preset adjustment amount, and the simulation results are obtained.

[0025] Obtain the target gate voltage corresponding to the peak degradation of the threshold voltage in the simulation results, where the target gate voltage is the worst bias point of the hot carrier effect.

[0026] The present invention also provides an apparatus for determining the worst bias point of the hot carrier effect, the apparatus comprising:

[0027] Building blocks are used to construct hot carrier effect models for FDSOI devices;

[0028] The determining unit is used to determine the parameter values ​​of each model parameter in the hot carrier effect model, the model parameters including: time power law, first fitting parameter, second fitting parameter, process parameter, threshold voltage, leakage voltage and saturation leakage voltage;

[0029] Create cells to generate input netlists based on simulation requirements;

[0030] The simulation unit is used to simulate the hot carrier effect model based on the input netlist and determine the worst bias point of the hot carrier effect.

[0031] Optionally, the hot carrier effect model includes:

[0032] △Vth=A·exp(B(V ds -V dsat ))·(V gs -V th ) p ·t n Wherein, ΔVth is the threshold voltage V. th The degradation amount, where A is the process parameter, B is the first fitting parameter, and V is... ds The leakage voltage, V dsat The saturation leakage voltage, V gs denoted as gate voltage, p as the second fitting parameter, n as the time power law, and t as the time for applying stress.

[0033] The present invention also provides a storage medium having a computer program stored thereon, which, when executed by a processor, implements the method described in any of the preceding claims.

[0034] The present invention also provides a computer device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the method described in any of the preceding claims.

[0035] This invention provides a method, apparatus, medium, and device for determining the worst-case bias point of the hot carrier effect in a device. The method includes: constructing a hot carrier effect model of an FDSOI device; determining the parameter values ​​of each model parameter in the hot carrier effect model, including: time power law, first fitting parameter, second fitting parameter, process parameter, threshold voltage, drain voltage, and saturation drain voltage; creating an input netlist according to simulation requirements; and simulating the hot carrier effect model based on the input netlist to determine the worst-case bias point of the hot carrier effect. Thus, the HCI effect of the FDSOI device can be simulated when all parameters of the hot carrier effect model (except gate voltage) are known, obtaining simulation results (threshold voltage degradation) at different gate voltages, thereby determining the worst-case bias point based on the simulation results, and effectively improving the performance of the FDSOI device. Attached Figure Description

[0036] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0037] Figure 1 This is a schematic flowchart of a method for determining the worst-case bias point of hot carrier effects provided in an embodiment of the present invention.

[0038] Figure 2 The fitting curve between ln△Vth and lnt provided in the embodiments of the present invention;

[0039] Figure 3 A schematic diagram of the simulation results after simulating the hot carrier effect model provided in the embodiment of the present invention;

[0040] Figure 4 A schematic diagram of the device structure for determining the worst bias point of the hot carrier effect provided in an embodiment of the present invention;

[0041] Figure 5 A schematic diagram of a computer storage medium structure provided in an embodiment of the present invention;

[0042] Figure 6 This is a schematic diagram of a computer device structure provided for an embodiment of the present invention. Detailed Implementation

[0043] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0044] This invention provides a method for determining the worst-case bias point of the hot carrier effect, such as... Figure 1 As shown, the method includes:

[0045] S110, Construct a hot carrier effect model for FDSOI devices;

[0046] In this step, a hot carrier effect model is constructed based on the parameters involved in the HCI effect. The hot carrier effect model is as follows:

[0047] △Vth=A·exp(B(V ds -V dsat ))·(V gs -V th ) p ·t n Where ΔVth is the threshold voltage V th The degradation amount, A is the process-related parameter, B is the first fitting parameter, V ds Leakage voltage, V dsat V is the saturation leakage voltage. gs denoted as gate voltage, p as the second fitting parameter, n as time power law, and t as the time for stress application.

[0048] S111, determine the parameter values ​​of each model parameter in the hot carrier effect model, the model parameters include: time power law, first fitting parameter, second fitting parameter, process parameter, threshold voltage, leakage voltage and saturation leakage voltage;

[0049] After the hot carrier effect model is created, the parameter values ​​of each model parameter in the hot carrier effect model are determined. The model parameters include: time power law, first fitting parameter, second fitting parameter, process-related parameters, threshold voltage, leakage voltage and saturation leakage voltage.

[0050] Specifically, determine the parameter values ​​for each model parameter in the hot carrier effect model, including:

[0051] When the model parameters are the time power law, the logarithmic function of the carrier effect model is determined; the logarithmic function is lnΔVth=n ln t+ln(A·exp(B(V ds -V dsat ))·(V gs -V th) p );

[0052] Plot the fitted curve between lnΔVth and lnt, and determine the slope of the fitted curve as the time power law n; where the fitted curve is as follows: Figure 2 As shown;

[0053] △Vth is the threshold voltage V th The degradation amount, A is the process parameter (the value of A varies under different process flows), B is the first fitting parameter, V ds Leakage voltage, V dsat V is the saturation leakage voltage. gs denoted as gate voltage, p as the second fitting parameter, and t as the time for applying stress.

[0054] When plotting the fitted curve, different t values ​​can be used, and the formula is: ln(A·exp(B(V)) ds -V dsat ))·(V gs -V th ) p ) is a constant, specifically Figure 2 The intercept corresponding to the curve in the curve.

[0055] When the model parameters are the first fitted parameters B, at the gate voltage V gs Threshold voltage V th With the second fitting parameter p fixed, the first leakage voltage V at the same time was obtained respectively. ds1 The corresponding first degradation amount ΔVth1 and second leakage voltage V are as follows: ds2 The corresponding second degradation amount △Vth2;

[0056] △Vth1=A·exp(B(V ds1 -V dsat ))·(V gs -V th ) p ·t n (1)

[0057] △Vth2=A·exp(B(V ds2 -V dsat ))·(V gs -V th ) p ·t n (2)

[0058] According to the formula Determine the first fitting parameter B.

[0059] In this embodiment, when the model parameter is the second fitting parameter p, the first fitting parameter B, and the saturation leakage voltage Vdsat The leakage voltage V ds and the threshold voltage V th When the value is fixed, obtain the first gate voltage V. gs1 Second gate voltage V gs2 First saturation leakage voltage V dsat1 Second saturation leakage voltage V dsat2 The value of; where,

[0060] △Vth1=A·exp(B(V ds -V dsat ))·(V gs1 -V th ) p ·t n (3)

[0061] △Vth2=A·exp(B(V ds -V dsat ))·(V gs2 -V th ) p ·t n (4)

[0062] According to the formula Determine the second fitting parameter p.

[0063] The value of B in this formula can be obtained by using the B value determined above according to formula (1) and formula (2).

[0064] It is worth noting that when the first gate voltage V gs1 When the value of is known, then the first saturation leakage voltage V dsat1 It is also known that when the second gate voltage V gs2 When the value of is known, then the second saturation leakage voltage V dsat2 It is also known.

[0065] In this embodiment, when the model parameter is the second fitting parameter p, the saturation leakage voltage V is obtained from the first fitting parameter B. dsat Leakage voltage V ds and threshold voltage V th When the value is fixed, obtain the first gate voltage V. gs1 Second gate voltage V gs2 First saturation leakage voltage V dsat1 Second saturation leakage voltage V dsat2 The value;

[0066] According to the formula Determine the second fitting parameter p.

[0067] Furthermore, the first fitting parameter B, the second fitting parameter p, and the saturation leakage voltage V determined in the above process can be used. dsat Leakage voltage V ds and threshold voltage V th Threshold voltage V th The degradation amount ΔVth, gate voltage V gs Substitute the values ​​of these parameters into the hot carrier effect model to determine the process-related parameter A.

[0068] In this way, the specific values ​​of each model parameter in the hot carrier effect model can be determined, so as to simulate the hot carrier effect model after the values ​​are assigned.

[0069] S112, Create an input netlist according to simulation requirements. The input netlist is used to adjust the specific values ​​of each of the model parameters.

[0070] Since different types of FDSOI devices may require different parameter values, this embodiment creates an input netlist based on simulation requirements. During simulation, the specific values ​​of each model parameter can be adjusted in the input netlist according to the actual simulation requirements of each device.

[0071] The input netlist is shown below:

[0072] *HCI

[0073] The hot carrier effect model is created by calling the .hdl HCI_1.va file.

[0074] X1 dg 0b hci

[0075] +alpha_dp = 1e-3beta_dp = 1

[0076] +tstart=1e7 tstop=1e8 timestep=1e7

[0077] The `.param vg=0` parameter defines a parameter `Vg` with an initial value of 0, so that `Vg` can be assigned to the gate voltage `Vgs` for gate voltage scanning.

[0078] vds d 0 3 The given leakage voltage value is 3V

[0079] vgs g 0vg gate voltage assigned value vg

[0080] vbs b 0 0 Body bias voltage is 0

[0081] .tran.1ps 1ussweepvg1.4 5 0.1 scans the gate voltage.

[0082] .options post

[0083] .end

[0084] Where alpha represents A, beta represents B, tstart is the simulation start time, tstop is the simulation end time; timestep is the simulation time interval, which is (1e8-1e7) / 1e7, and outputs ΔVth at 10 different time points within the simulation time interval.

[0085] It is worth noting that under normal experimental conditions, stress (i.e., voltage) needs to be applied simultaneously to both the drain and source terminals to generate the hot carrier effect. During simulation, the simulation needs to start at a certain time point and continue until a certain time point; this time interval is the voltage application time, which is also the stress application time. Therefore, the simulation time interval (timestep) is consistent with the stress application time mentioned above.

[0086] In this way, when simulating FDSOI devices, the simulation requirements can be met simply by adjusting the specific values ​​of each model parameter in the input netlist.

[0087] S113, Simulate the hot carrier effect model based on the model parameter input netlist to determine the worst bias point of the hot carrier.

[0088] After the input netlist is determined, the hot carrier effect model is simulated based on the input netlist to determine the worst bias point of the hot carrier effect.

[0089] In this embodiment, the hot carrier effect model is simulated based on the input netlist, and the worst bias point of the hot carrier effect is determined based on the simulation results, including:

[0090] Control the leakage voltage V in the input netlist ds The gate voltage V is a fixed value. gs The hot carrier effect model is simulated by changing the preset adjustment amount, and the simulation results are obtained.

[0091] Obtain the target gate voltage corresponding to the peak degradation of the threshold voltage in the simulation results. The target gate voltage is the worst bias point of the hot carriers.

[0092] For example, if the simulation results are as follows Figure 3 As shown, the target gate voltage corresponding to the peak degradation of the threshold voltage is V. gs =2.5V, then the worst bias point for hot carriers is V. gs =2.5V.

[0093] The method for determining the worst bias point of the hot carrier effect in FDSOI devices provided in this embodiment can simulate the HCI effect of FDSOI devices when all model parameters (except gate voltage) of the hot carrier effect model are known, obtain the simulation results (the degradation of the threshold voltage) corresponding to different gate voltages, and thus determine the worst bias point based on the simulation results, thereby effectively improving the performance of FDSOI devices.

[0094] Based on the same inventive concept, embodiments of the present invention also provide a device for determining the worst-case bias point of the hot carrier effect, such as... Figure 4 As shown, it includes:

[0095] Building unit 41 is used to build a hot carrier effect model for FDSOI devices;

[0096] The determining unit 42 is used to determine the parameter values ​​of each model parameter in the hot carrier effect model. The model parameters include: time power law, first fitting parameter, second fitting parameter, process parameter, threshold voltage, leakage voltage and saturation leakage voltage.

[0097] A creation unit is used to create an input netlist according to simulation requirements. The input netlist is used to adjust the specific values ​​of each of the model parameters.

[0098] The simulation unit is used to simulate the hot carrier effect model based on the input netlist and determine the worst bias point of the hot carrier effect.

[0099] The hot carrier effect model includes:

[0100] △Vth=A·exp(B(V ds -V dsat ))·(V gs -V th ) p ·t n Wherein, ΔVth is the threshold voltage V. th The degradation amount, where A is the process-related parameter, B is the first fitting parameter, and V is... ds The leakage voltage, V dsat The saturation leakage voltage, V gs is the gate voltage, p is the second fitting parameter, n is the time power law, and t is the time for applying stress.

[0101] It should be noted that this device can be a computer, server, or other device with computing or storage capabilities. This device can be a standalone server; there are no restrictions on its capabilities.

[0102] Since the apparatus described in the embodiments of this invention is an apparatus used to implement the methods of the embodiments of this invention, those skilled in the art can understand the specific structure and variations of the apparatus based on the methods described in the embodiments of this invention, and therefore will not be described in detail here. All apparatuses used in the methods of the embodiments of this invention fall within the scope of protection of this invention.

[0103] Based on the same inventive concept, this embodiment provides a computer device 500, such as... Figure 5 As shown, the system includes a memory 510, a processor 520, and a computer program 511 stored in the memory 510 and executable on the processor 520. When the processor 520 executes the computer program 511, it performs the following steps:

[0104] Constructing a hot carrier effect model for FDSOI devices;

[0105] The parameter values ​​of each model parameter in the hot carrier effect model are determined. The model parameters include: time power law, first fitting parameter, second fitting parameter, process parameter, threshold voltage, leakage voltage and saturation leakage voltage.

[0106] An input netlist is created according to the simulation requirements. The input netlist is used to adjust the specific values ​​of each of the model parameters.

[0107] The hot carrier effect model is simulated based on the input netlist to determine the worst-case bias point of the hot carrier effect.

[0108] In specific implementation, when the processor 520 executes the computer program 511, it can implement any of the aforementioned embodiments.

[0109] Since the computer device described in this embodiment is the device used to implement the method for determining the worst bias point of hot carriers in the foregoing embodiments of this application, those skilled in the art can understand the specific implementation method and various variations of the computer device in this embodiment based on the method described in the foregoing embodiments of this application. Therefore, how the server implements the method in the embodiments of this application will not be described in detail here. Any device used by those skilled in the art to implement the method in the embodiments of this application falls within the scope of protection of this application.

[0110] Based on the same inventive concept, the present invention also provides a computer-readable storage medium 600, such as... Figure 6 As shown, a computer program 611 is stored thereon, which, when executed by a processor, performs the following steps:

[0111] Construct a hot carrier effect model for FDSOI devices;

[0112] The parameter values ​​of each model parameter in the hot carrier effect model are determined. The model parameters include: time power law, first fitting parameter, second fitting parameter, process parameter, threshold voltage, leakage voltage and saturation leakage voltage.

[0113] An input netlist is created according to the simulation requirements. The input netlist is used to adjust the specific values ​​of each of the model parameters.

[0114] The hot carrier effect model is simulated based on the input netlist to determine the worst-case bias point of the hot carrier effect.

[0115] In practice, when the computer program 511 is executed by the processor, it can implement any of the aforementioned embodiments.

[0116] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0117] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart... Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0118] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0119] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0120] Although preferred embodiments of this application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this application.

[0121] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for determining the worst-case bias point of the hot carrier effect, characterized in that, The method includes: Constructing a hot carrier effect model for FDSOI devices; The parameter values ​​of each model parameter in the hot carrier effect model are determined. The model parameters include: time power law, first fitting parameter, second fitting parameter, process parameter, threshold voltage, leakage voltage and saturation leakage voltage. An input netlist is created according to the simulation requirements. The input netlist is used to adjust the specific values ​​of each of the model parameters. The hot carrier effect model is simulated based on the input netlist to determine the worst-case bias point of the hot carrier effect; wherein... The hot carrier effect model includes: ; wherein, the Threshold voltage The amount of degradation, the A The process parameters are... B The first fitting parameter is the... The leakage voltage, the The saturation leakage voltage, the For the gate voltage, the p The second fitting parameter, the n For the time power law, the The time during which stress is applied; The hot carrier effect model is simulated based on the input netlist to determine the worst-case bias point of the hot carrier effect, including: Control the leakage voltage in the input netlist The gate voltage is controlled to a fixed value. The hot carrier effect model is simulated by changing the preset adjustment amount, and the simulation results are obtained. Obtain the target gate voltage corresponding to the peak degradation of the threshold voltage in the simulation results, where the target gate voltage is the worst bias point of the hot carrier effect.

2. The method as described in claim 1, characterized in that, The determination of parameter values ​​for each model parameter in the hot carrier effect model includes: When the model parameters are the time power law, the logarithmic function of the carrier effect model is determined; the logarithmic function is... ; Drawing the and The slope of the fitted curve between the two is determined as the time power law. n ;in, The Threshold voltage The amount of degradation, the A The process parameters are... B The first fitting parameter is the... The leakage voltage, the The saturation leakage voltage, the For the gate voltage, the p The second fitting parameter, the The time during which stress is applied.

3. The method as described in claim 1, characterized in that, The determination of parameter values ​​for each model parameter in the hot carrier effect model includes: When the model parameters are the first fitting parameters B At the time, when the gate voltage When the value is fixed, the first leakage voltage at the same time is obtained. The corresponding first degradation amount and the second leakage voltage The corresponding second degradation amount The , ; According to the formula Determine the first fitting parameters B ;in, The A The process parameters are... The saturation leakage voltage, the For the gate voltage, the For the threshold voltage, the p is the second fitting parameter.

4. The method as described in claim 1, characterized in that, The determination of parameter values ​​for each model parameter in the hot carrier effect model includes: When the model parameters are the second fitting parameters p At that time, in the first fitting parameter B The saturation leakage voltage The leakage voltage and the threshold voltage When the value is fixed, obtain the first gate voltage. Second gate voltage First saturation leakage voltage Second saturation leakage voltage The value; According to the formula Determine the second fitting parameters p ; The first leakage voltage at the same time The corresponding first degradation amount, The second leakage voltage at the same time The corresponding second degradation amount.

5. An apparatus for determining the worst-case bias point of the hot carrier effect, characterized in that, The device includes: Building blocks are used to construct hot carrier effect models for FDSOI devices; The determining unit is used to determine the parameter values ​​of each model parameter in the hot carrier effect model, the model parameters including: time power law, first fitting parameter, second fitting parameter, process parameter, threshold voltage, leakage voltage and saturation leakage voltage; Create cells to generate input netlists based on simulation requirements; The simulation unit is used to simulate the hot carrier effect model based on the input netlist and determine the worst bias point of the hot carrier effect. The hot carrier effect model includes: ; wherein, the Threshold voltage The amount of degradation, the A The process parameters are... B The first fitting parameter is the... The leakage voltage, the The saturation leakage voltage, the For the gate voltage, the p The second fitting parameter, the n For the time power law, the The time during which stress is applied; The hot carrier effect model is simulated based on the input netlist to determine the worst-case bias point of the hot carrier effect, including: Control the leakage voltage in the input netlist The gate voltage is controlled to a fixed value. The hot carrier effect model is simulated by changing the preset adjustment amount, and the simulation results are obtained. Obtain the target gate voltage corresponding to the peak degradation of the threshold voltage in the simulation results, where the target gate voltage is the worst bias point of the hot carrier effect.

6. A storage medium having a computer program stored thereon, characterized in that, When the program is executed by the processor, it implements the method described in any one of claims 1 to 4.

7. A computer device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the program, it implements the method according to any one of claims 1 to 4.

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