Apparatus and method for mass transfer of light emitting diode chips

Abstract

The application relates to a light emitting diode chip mass transfer device and method, the method comprising the steps of: matching a first wafer with a plurality of light emitting diode chips with the mass transfer device, each light emitting diode chip corresponding to a first port of a guide groove; matching a back plate with the mass transfer device, the back plate being close to a second surface of the mass transfer device, the back plate having a plurality of to-be-mounted positions, the to-be-mounted positions of the back plate corresponding to second ports of the mass transfer device; and selectively peeling off the light emitting diode chips on the first wafer by using a laser, so that the peeled-off light emitting diode chips are guided to the to-be-mounted positions of the back plate in a preset posture through the guide grooves. The light emitting diode chips are guided by the guide grooves, so that the light emitting diode chips are in the preset posture in the to-be-mounted positions of the back plate, and the steps of mass transfer of the light emitting diode chips are simplified.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a device and method for mass transfer of light-emitting diode chips. Background Technology

[0002] In the existing technology, mass transfer is a key technological breakthrough in the fabrication process of light-emitting diode chips. The process mainly includes laser lift-off, mass transfer, and inspection and repair. Among them, selective laser lift-off technology is the core of mass transfer. Selective laser transfer mainly relies on bonding for transfer, which has low transfer efficiency and complex transfer process, greatly reducing transfer efficiency and yield.

[0003] Therefore, simplifying the mass transfer process of LED chips is an urgent problem to be solved. Summary of the Invention

[0004] In view of the shortcomings of the prior art, the purpose of this application is to provide a mass transfer apparatus and method, which aims to solve the problem that when mass transferring light-emitting diode chips, it is not necessary to bond the light-emitting diode chips to the backplane, thus simplifying the entire process of mass transfer of light-emitting diode chips.

[0005] A mass transfer device for light-emitting diode (LED) chips includes a first surface and a second surface facing away from each other. The mass transfer device includes a plurality of guide grooves penetrating the first surface and the second surface for guiding the LED chips. Each guide groove includes a first port on the first surface and a second port on the second surface. The guide groove gradually narrows from the first port toward the second port to limit the landing position when transferring the LED chips.

[0006] By providing guide grooves in the mass transfer device to limit the landing position of the LED chip, the position of the LED chip can be limited without bonding the LED chip during the mass transfer process, which simplifies the process of mass transfer of the LED chip.

[0007] Optionally, the first surface of the mass transfer device is provided with at least two first alignment points to facilitate matching and alignment of the mass transfer device.

[0008] Based on the same inventive concept, this application provides a method for mass transfer of light-emitting diode chips. The method uses the mass transfer device described above and includes the following steps:

[0009] A first wafer with multiple light-emitting diode chips is matched and aligned with the mass transfer device, wherein the first wafer is close to the first surface of the mass transfer device, and each light-emitting diode chip corresponds to the first port of a guide groove;

[0010] The backplate is matched and aligned with the mass transfer device, wherein the backplate is close to the second surface of the mass transfer device, the backplate has multiple installation positions, and the installation positions of the backplate correspond to the second port of the mass transfer device.

[0011] The LED chips on the first wafer are selectively stripped using a laser, and the stripped LED chips are guided by guide grooves to be positioned in a preset orientation on the backplate for installation.

[0012] By creating multiple guide slots in the mass transfer device, the LED chips are guided to be positioned in a preset posture at the installation location on the backplate, thus achieving mass transfer of LED chips and simplifying the steps involved in mass transfer of LED chips.

[0013] Optionally, the first wafer has at least two second pairing sites. When the first wafer with multiple light-emitting diode chips is matched and aligned with the mass transfer device, the second pairing sites in the first wafer correspond to the first pairing sites in the mass transfer device. By matching and aligning the second pairing sites of the first wafer with the second pairing sites in the mass transfer device, it is convenient for each light-emitting diode chip in the first wafer to correspond to the guide slot in the mass transfer device, thereby facilitating the guidance of each light-emitting diode chip by each guide slot.

[0014] Optionally, the backplate has at least two third pairing points, such that when the backplate is matched and aligned with the mass transfer device, the third pairing points in the backplate correspond to the first pairing points in the mass transfer device; by aligning the third pairing points of the backplate with the first pairing points in the mass transfer device, the guide groove in the mass transfer device can guide the light-emitting diode chip to the installation position on the backplate.

[0015] Optionally, the light-emitting diode chip includes a cathode and an anode, and each mounting area of ​​the backplate includes a first eutectic metal and a second eutectic metal; the stripped light-emitting diode chip is guided via a guide groove to a preset posture at the mounting position on the backplate, including:

[0016] The stripped LED chip is inserted into its corresponding guide groove, and the landing position of the LED is restricted by the inner wall of the guide groove, so that the cathode and anode of the LED chip contact the first eutectic metal and the second eutectic metal in the mounting position of the back plate, respectively. By contacting the cathode and anode of the LED chip with the first eutectic metal and the second eutectic metal in the mounting position of the back plate, each LED chip is effectively connected to its respective mounting position in the back plate.

[0017] Optionally, after guiding the stripped LED chip through the guide groove to a preset posture in the mounting position on the backplate, the method further includes the following steps:

[0018] The first eutectic metal and the second eutectic metal at each of the installation positions on the back plate are heated;

[0019] The cathode and anode of the stripped LED chip are connected to the first eutectic metal and the second eutectic metal, respectively, further ensuring a stable connection between the LED chip and the installation location.

[0020] Optionally, the selective removal of the light-emitting diode chip on the first wafer using a laser includes the following steps:

[0021] The detection device is used to detect each light-emitting diode chip in the first wafer and the detection results are obtained.

[0022] Based on the detection results, the light-emitting diode chips on the first wafer are selectively stripped.

[0023] By selectively stripping the LED chips from the first wafer, it can be ensured that the LED chips installed at the mounting positions in the backplane all meet the relevant standards.

[0024] Optionally, the method further includes the step of:

[0025] The presence of LED chips at each installation location in the backplate is detected.

[0026] Based on the fact that each of the mounting positions in the backplane has a light-emitting diode chip, after the first wafer is detached from the mass transfer device, the second wafer with the light-emitting diode chip is aligned with the mass transfer device.

[0027] Based on the fact that each position to be installed in the backplane contains a light-emitting diode chip, the coordinates of the light-emitting diode chips that need to be stripped in the second wafer are determined.

[0028] Based on the coordinates, a laser is used to selectively peel off the light-emitting diode (LED) chip on the second wafer, so that the peeled LED chip is guided by a guide groove to be in the installation position on the backplate in a preset posture.

[0029] By providing a second wafer with light-emitting diode (LED) chips, selectively peeling off the LED chips from the second wafer using a laser, and repairing the backplane, the LED chips from the second wafer are installed into the backplane, so that each installation position in the backplane corresponds to the installation of an LED chip.

[0030] When the second wafer is matched and aligned with the mass transfer device, the distance between the surface of the second wafer closest to the mass transfer device and the installation position in the back plate is d, wherein the thickness of the light-emitting diode chip is h, and d is greater than 2h, so as to avoid interference between the light-emitting diode chip in the second wafer and the light-emitting diode chip already installed in the back plate. Attached Figure Description

[0031] Figure 1 A flowchart of the mass transfer method for light-emitting diode chips provided in the embodiments of this application;

[0032] Figure 2 This is a schematic diagram of the structure of a first wafer with a light-emitting diode chip provided in an embodiment of this application;

[0033] Figure 3 This is a schematic diagram of the mass transfer device provided in the embodiments of this application;

[0034] Figure 4 This is a schematic diagram of the structure of the backplate provided in an embodiment of this application;

[0035] Figure 5 This is a schematic diagram of the structure provided in an embodiment of the present application for peeling the light-emitting diode chip from the first wafer to the backplane;

[0036] Figure 6 This is a schematic diagram of the structure for repairing the light-emitting diode chip in the second wafer to the backplane, as provided in an embodiment of this application.

[0037] Explanation of reference numerals in the attached figures:

[0038] 10-Mass transfer device; 11-First surface; 12-Second surface; 13-Guide groove; 13a-First port; 13b-Second port; 14-First alignment point;

[0039] 20 - First wafer; 21 - Second alignment point;

[0040] 30 - LED chip; 31 - Cathode; 32 - Anode;

[0041] 40 - Backplate; 41 - Installation location; 41a - First eutectic metal; 41b - Second eutectic metal; 42 - Third alignment point;

[0042] 50 - Second wafer. Detailed Implementation

[0043] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0045] The existing solution describes the problems in the fabrication process of LED chip 30. Mass transfer is a key technological breakthrough. The process mainly includes laser lift-off, mass transfer and inspection and repair. Among them, selective laser lift-off technology is the core of mass transfer. Selective laser transfer mainly relies on bonding for transfer. This method has low transfer efficiency and complex transfer process, which greatly reduces transfer efficiency and yield.

[0046] Therefore, this application aims to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in subsequent embodiments.

[0047] This application provides a detailed description of a mass transfer device 10 for a light-emitting diode chip 30. The mass transfer device 10 includes a first surface 11 and a second surface 12 facing away from each other. See [link to relevant documentation]. Figure 3 , Figure 3 This is a schematic diagram of the mass transfer device provided in an embodiment of this application. The mass transfer device 10 includes a plurality of guide grooves 13 penetrating the first surface 11 and the second surface 12 for guiding the light-emitting diode chip 30. The guide groove 13 includes a first port 13a on the first surface 11 and a second port 13b on the second surface 12. The guide groove 13 gradually narrows from the first port 13a toward the second port 13b to limit the landing position when transferring the light-emitting diode chip 30.

[0048] In the embodiments of this application, see Figure 4 , Figure 4This is a schematic diagram of the structure of the backplate provided in this application embodiment; the first port 13a is larger than the second port 13b. When the mass transfer device 10 transfers the light-emitting diode chip 30 (hereinafter referred to as LED) onto the backplate 40, the light-emitting diode chip 30 enters from the first port 13a and approaches the second port 13b and finally contacts the backplate 40. Specifically, the first port 13a is set upwards and the second port 13b is set downwards. The light-emitting diode chip 30 can fall from the first port 13a towards the second port 13b and finally contact the backplate 40. The guide groove 13 narrows from top to bottom. The size of the second port 13b of the guide groove 13 is slightly larger than the projected size of the light-emitting diode chip 30 from top to bottom. During the falling process of the light-emitting diode chip 30, the inner wall of the guide groove 13 can prevent the light-emitting diode chip 30 from deflecting and limit the posture of the light-emitting diode chip 30 in contact with the backplate 40.

[0049] The first surface 11 of the mass transfer device 10 is provided with at least two first pairing sites 14.

[0050] In this embodiment of the application, the first alignment point 14 of the mass transfer device 10 is aligned with the wafer with a plurality of light-emitting diode chips 30, so that each light-emitting diode chip 30 corresponds to the first port 13a of each guide groove 13.

[0051] Please see Figure 1 , Figure 1 This is a flowchart of a method for mass transfer of light-emitting diode chips provided in an embodiment of this application. The method uses the mass transfer device 10 described above and includes the following steps:

[0052] S1, the first wafer 20 with multiple light-emitting diode chips 30 is matched and aligned with the mass transfer device 10, wherein the first wafer 20 is close to the first surface 11 of the mass transfer device 10, and each light-emitting diode chip 30 corresponds to the first port 13a of a guide groove 13.

[0053] See the embodiments provided in this application for details. Figure 2 , Figure 2 This is a schematic diagram of the structure of a first wafer with light-emitting diode chips provided in an embodiment of this application. Multiple light-emitting diode chips 30 are disposed on the lower surface of the first wafer 20 (Sapphire). When the first wafer 20 is matched and aligned with the mass transfer device 10, the first wafer 20 with multiple light-emitting diode chips 30 is above the mass transfer device 10, and each light-emitting diode chip 30 is suspended above each guide groove 13.

[0054] S2, aligning the back plate 40 with the mass transfer device 10, wherein the back plate 40 is close to the second surface 12 of the mass transfer device 10, and the back plate 40 has a plurality of installation positions 41, the installation positions 41 of the back plate 40 corresponding to the second port 13b of the mass transfer device 10.

[0055] In the embodiments provided in this application, during the mass transfer process, multiple LED chips 30 in the first wafer 20 are ultimately transferred to multiple mounting positions 41 on the backplate 40. Specifically, the mass transfer device 10 is located above the backplate 40, and the second port 13b of the guide groove 13 in the mass transfer device 10 is in direct contact with the upper surface of the backplate 40. The multiple mounting positions 41 on the backplate 40 are respectively located in the projection area of ​​each guide groove 13 from top to bottom in the mass transfer device 10.

[0056] S3, using a laser to selectively peel off the light-emitting diode chip 30 on the first wafer 20, so that the peeled light-emitting diode chip 30 is guided by the guide groove 13 to be placed in the installation position 41 of the back plate 40 in a preset posture.

[0057] In the embodiments provided in this application, the light-emitting diode chip 30 is grown on the first wafer 20. During the mass transfer of the light-emitting diode chip 30, some or all of the light-emitting diode chips 30 on the first wafer 20 are peeled off by laser. When the light-emitting diode chip 30 is separated from the first wafer 20, the light-emitting diode chip 30 falls into the corresponding guide groove 13 until it contacts a mounting position in the back plate 40. During the process of the light-emitting diode chip 30 falling into the corresponding guide groove 13, the inner wall of the guide groove 13 can restrict the deflection of the light-emitting diode chip 30, so that the light-emitting diode chip 30 will eventually contact the mounting position 41 in the back plate 40 in a preset posture.

[0058] In this embodiment, multiple guide grooves 13 are provided in the mass transfer device 10. The light-emitting diode chip 30 is guided by the guide grooves 13 and the light-emitting diode chip 30 is placed in the installation position 41 of the back plate 40 in a preset posture, thereby realizing the mass transfer of the light-emitting diode chip 30 and simplifying the steps of mass transfer of the light-emitting diode chip 30.

[0059] The first wafer 20 has at least two second pairing sites 21. When the first wafer 20 with multiple light-emitting diode chips 30 is matched and aligned with the mass transfer device 10, the second pairing sites 21 in the first wafer 20 correspond to the first pairing sites 14 in the mass transfer device 10.

[0060] Specifically, each of the second alignment points 21 on the first wafer 20 is aligned with each of the first alignment points 14 on the mass transfer device 10, so that each light-emitting diode chip 30 on the first wafer 20 corresponds to each of the guide slots 13 in the mass transfer device 10.

[0061] For example, the first wafer 20 has two second pairing sites 21, and the mass transfer device 10 has two first pairing sites 14. The two second pairing sites 21 of the first wafer 20 are respectively aligned with the first pairing sites 14 in the mass transfer device 10, so that the matching alignment position of the first wafer 20 and the mass transfer device 10 is determined.

[0062] The back plate 40 has at least two third pairing sites 42, such that when the back plate 40 is matched and aligned with the mass transfer device 10, the third pairing sites 42 in the back plate 40 correspond to the first pairing sites 14 in the mass transfer device 10.

[0063] Specifically, each of the third alignment points 42 of the back plate 40 is matched and aligned with each of the first alignment points 14 in the mass transfer device 10, so that each installation position 41 in the back plate 40 corresponds to the second port 13b of each guide groove 13 in the mass transfer device 10.

[0064] The light-emitting diode chip 30 includes a cathode 31 and an anode 32, and each mounting area of ​​the backplate 40 includes a first eutectic metal 41a and a second eutectic metal 41b; the stripped light-emitting diode chip 30 is guided via the guide groove 13 to a preset posture at the mounting position 41 of the backplate 40, including:

[0065] The stripped LED chip 30 is inserted into the corresponding guide groove 13, and the landing position of the LED is restricted by the inner wall of the guide groove 13, so that the cathode 31 and anode 32 of the LED chip 30 contact the first eutectic metal 41a and the second eutectic metal 41b in the mounting position 41 of the back plate 40, respectively.

[0066] In the embodiments provided in this application, in order to enable the LED chip 30 to achieve effective electrical connection with the opposite mounting position 41 after being stripped, the cathode 31 and anode 32 of each LED chip 30 must respectively make contact connection with the first eutectic metal 41a and the second eutectic metal 41b of each mounting position 41 in the back plate 40. The cathode 31 of each LED chip 30 is located directly above the first eutectic metal 41a of each mounting position 41, and the anode 32 of each LED chip 30 is located directly above the second eutectic metal 41b of each mounting position 41.

[0067] For example, see Figure 5 , Figure 5 This is a schematic diagram of the structure for peeling a light-emitting diode (LED) chip from a first wafer to a backplane according to an embodiment of this application. The LED chip 30 is peeled from the first wafer 20 using a laser, detaching from the first wafer 20. The LED chip 30 falls into a corresponding guide groove 13. The guide groove 13 narrows from the first port 13a towards the second port 13b. When the LED chip 30 is close to the mounting position 41 of the backplane 40, the distance between the inner wall of the guide groove 13 and the periphery of the LED chip 30 is relatively small. The inner wall of the guide groove 13 hinders the deflection of the LED chip 30, ultimately causing the cathode 31 and anode 32 of the LED chip 30 to contact the first eutectic metal 41a and the second eutectic metal 41b of the mounting position 41 in the backplane 40, respectively.

[0068] By bringing the LED chip 30 into contact with the first eutectic metal 41a and the second eutectic metal 41b at a mounting position 41 in the backplate 40, an effective connection is achieved between the LED chip 30 stripped from the first wafer 20 and the backplate 40.

[0069] After guiding the stripped LED chip 30 via the guide groove 13 to a preset posture in the mounting position 41 of the backplate 40, the following steps are also included:

[0070] The first eutectic metal 41a and the second eutectic metal 41b in each of the installation positions 41 of the back plate 40 are heated;

[0071] The cathode 31 and anode 32 of the stripped LED chip 30 are connected to the first eutectic metal 41a and the second eutectic metal 41b, respectively.

[0072] Specifically, in order to enable the light-emitting diode chip 30 to be stably connected to a mounting position 41 of the back plate 40 in a preset posture, after the stripped light-emitting diode chip 30 is guided by the guide groove 13 to be in the mounting position 41 of the back plate 40 in a preset posture, the first eutectic metal 41a and the second eutectic metal 41b of the mounting position 41 are heated so that the cathode 31 and the anode 32 of the light-emitting diode chip 30 are respectively welded to the first eutectic metal 41a and the second eutectic metal 41b of the mounting position 41.

[0073] The selective removal of the light-emitting diode chip 30 on the first wafer 20 using a laser includes the following steps:

[0074] The detection device is used to detect each light-emitting diode chip 30 in the first wafer 20 and the detection results are obtained.

[0075] Based on the detection results, the light-emitting diode chip 30 on the first wafer 20 is selectively stripped.

[0076] In the embodiments provided in this application, the light-emitting diode (LED) chip 30 is grown directly on the first wafer 20. Therefore, some of the LED chips 30 grown on the first wafer 20 do not meet the standards. To ensure that all LED chips 30 installed on the backplane 40 meet the standards, before using laser to peel off the LED chips 30 on the first wafer 20, all LED chips 30 on the first wafer 20 are detected by a detection device, and the coordinates of the LED chips 30 that meet the standards are marked. When selectively peeling off the LED chips 30 on the first wafer 20 using laser, the LED chips 30 that meet the standards are peeled off by laser, so that the LED chips 30 that meet the standards are installed at the installation position 41 on the backplane 40.

[0077] The method further includes the following steps:

[0078] The presence of LED chips 30 is detected at each installation location 41 in the backplate 40.

[0079] Given that each of the mounting positions 41 in the backplate 40 has a light-emitting diode chip 30, after the first wafer 20 is detached from the mass transfer device 10, the second wafer 50 with the light-emitting diode chip 30 is aligned with the mass transfer device 10.

[0080] Based on the fact that each of the installation positions 41 in the backplate 40 has a light-emitting diode chip 30, the coordinates of the light-emitting diode chip 30 that needs to be stripped in the second wafer 50 are determined.

[0081] Based on the coordinates, a laser is used to selectively peel off the light-emitting diode chip 30 on the second wafer 50, so that the peeled light-emitting diode chip 30 is guided by the guide groove 13 to be placed in the installation position 41 of the back plate 40 in a preset posture.

[0082] In the embodiments of this application, see Figure 6 , Figure 6This is a schematic diagram of the structure for repairing LED chips from a second wafer to a backplane according to an embodiment of this application. After installing standard LED chips 30 from the first wafer 20 at the installation positions 41 on the backplane 40, some installation positions 41 on the backplane 40 will still not have LED chips 30 installed. In the embodiment provided by this application, a second wafer 50 with LED chips 30 is provided. The LED chips 30 in the second wafer 50 are selectively peeled off by laser to repair the backplane 40, so that the LED chips 30 in the second wafer 50 are installed on the backplane 40, so that each installation position 41 on the backplane 40 corresponds to an LED chip 30.

[0083] In the embodiments provided in this application, each LED chip 30 in the second wafer 50 corresponds one-to-one with each mounting position 41 of the backplane 40. After selectively mounting the LED chips 30 in the first wafer 20 to the mounting positions 41 of the backplane 40, some mounting positions 41 of the backplane 40 do not have LED chips 30 installed. The positions where LED chips 30 are installed in each mounting position 41 of the backplane 40 are detected, and the mounting positions 41 of the backplane 40 where LED chips 30 are not yet installed are marked.

[0084] When repairing the installation position 41 in the backplate 40 where no light-emitting laser chip has been installed, the installation position 41 marked in the backplate 40 is mapped to the position of each light-emitting diode chip 30 in the second wafer 50. In the embodiment provided in this application, in order to facilitate the specific recording of the specific position of the light-emitting diode chip 30, the position of each light-emitting diode chip 30 in the second wafer 50 is specifically recorded by coordinates. When repairing the installation position 41 in the backplate 40, the laser is used to peel off the light-emitting diode chip 30 in the second wafer 50 and make it fall into the installation position 41 in the backplate 40 that needs to be repaired, according to the coordinate position of each light-emitting diode chip 30.

[0085] When the second wafer 50 is matched and aligned with the mass transfer device 10, the distance between the surface of the second wafer 50 closest to the mass transfer device 10 and the mounting position 41 in the back plate 40 is d, wherein the thickness of the light-emitting diode chip 30 is h, and d is greater than 2h.

[0086] In the embodiments provided in this application, see Figure 6During the repair work on the backplate 40, the second wafer 50 with the light-emitting diode chip 30 is matched and aligned with the mass transfer device 10. The second wafer 50 is located directly above the backplate 40. In order to avoid interference between the light-emitting diode chip 30 in the second wafer 50 and the light-emitting diode chip 30 already installed in the backplate 40, the height difference between the surface of the second wafer 50 facing the mass transfer device and the light-emitting diode chip 30 installed in the backplate 40 is greater than the thickness of the light-emitting diode chip 30.

[0087] It should be understood that the application of this application is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A method of mass transfer of light emitting diode chips, characterized by, The method employs a mass transfer device for mass transfer, the mass transfer device comprising a first surface and a second surface facing away from each other, and a plurality of guide grooves penetrating the first and second surfaces for guiding the light-emitting diode chip, the guide grooves including a first port on the first surface and a second port on the second surface, to limit the landing position when transferring the light-emitting diode chip; the method includes the steps of: A first wafer with multiple light-emitting diode chips is matched and aligned with the mass transfer device, wherein the first wafer is close to the first surface of the mass transfer device, and each light-emitting diode chip corresponds to the first port of a guide groove; The backplate is matched and aligned with the mass transfer device, wherein the backplate is close to the second surface of the mass transfer device, the backplate has multiple installation positions, and the installation positions of the backplate correspond to the second port of the mass transfer device. The LED chips on the first wafer are selectively peeled off using a laser, and the peeled LED chips are guided by guide grooves to be in the installation position on the backplate in a preset posture. It also includes the following steps: The presence of LED chips at each installation location in the backplate is detected. Based on the fact that each of the mounting positions in the backplane has a light-emitting diode chip, after the first wafer is detached from the mass transfer device, the second wafer with the light-emitting diode chip is aligned with the mass transfer device. Based on the fact that each position to be installed in the backplane contains a light-emitting diode chip, the coordinates of the light-emitting diode chips that need to be stripped in the second wafer are determined. Based on the coordinates, a laser is used to selectively peel off the light-emitting diode (LED) chip on the second wafer, so that the peeled LED chip is guided by a guide groove to be in the installation position on the backplate in a preset posture.

2. The method of claim 1, wherein, The first surface of the mass transfer device is provided with at least two first pair of sites, and the first wafer has at least two second pair of sites. When the first wafer with multiple light-emitting diode chips is matched and aligned with the mass transfer device, the second pair of sites in the first wafer corresponds to the first pair of sites in the mass transfer device.

3. The method as described in claim 2, characterized in that, The backplate has at least two third pair sites, such that when the backplate is matched and aligned with the mass transfer device, the third pair sites in the backplate correspond to the first pair sites in the mass transfer device.

4. The method as described in claim 1, characterized in that, The light-emitting diode chip includes a cathode and an anode, and each area of ​​the backplate to be mounted includes a first eutectic metal and a second eutectic metal; The process involves guiding the stripped LED chip via a guide groove to a preset orientation in the mounting position on the backplate, including: The stripped LED chip is inserted into the corresponding guide groove, and the landing position of the LED is restricted by the inner wall of the guide groove, so that the cathode and anode of the LED chip contact the first eutectic metal and the second eutectic metal in the mounting position of the back plate, respectively.

5. The method as described in claim 4, characterized in that, After guiding the stripped LED chip through the guide groove to a preset position on the backplate for installation, the process further includes the following steps: The first eutectic metal and the second eutectic metal at each of the installation positions on the back plate are heated; The cathode and anode of the stripped LED chip are connected to the first eutectic metal and the second eutectic metal, respectively.

6. The method as described in claim 1, characterized in that, The selective removal of light-emitting diode chips on the first wafer using laser includes the following steps: The detection device is used to detect each light-emitting diode chip in the first wafer and the detection results are obtained. Based on the detection results, the light-emitting diode chips on the first wafer are selectively stripped.

7. The method as described in claim 1, characterized in that, When the second wafer is matched and aligned with the mass transfer device, the distance between the surface of the second wafer closest to the mass transfer device and the installation position in the back plate is d, wherein the thickness of the light-emitting diode chip is h, and d is greater than 2h.

8. The method according to any one of claims 1 to 7, characterized in that, The guide groove gradually narrows from the first port toward the second port.

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