Plasma generating device and semiconductor processing apparatus

Abstract

The application discloses a kind of plasma generating device and semiconductor process equipment, the plasma generating device, for semiconductor process equipment, be arranged in the side of dielectric window far from process chamber, the plasma generating device includes: first electrode component, in the side of the dielectric window away from the process chamber, the first electrode component includes: coil electrode, the coil electrode is helical, the coil electrode includes the first end and the second end opposite in axial direction, the first end is used to be connected with radio frequency power supply by matching device, the second end is used to be fixedly connected with the dielectric window;And, displacement component, the drive end of the displacement component is driven with the first end drive connection, for driving the coil electrode along axial direction telescopic.The above-mentioned plasma generating device, by the telescopic adjustment of coil electrode along axial direction, to adjust process chamber inside equal body plasma distribution, to realize the uniformity of wafer etching.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing, and more particularly to a plasma generating device and semiconductor process equipment. Background Technology

[0002] With the rapid development of semiconductor device manufacturing processes, the requirements for device performance and integration are becoming increasingly stringent, leading to the widespread application of plasma technology. In systems that utilize plasma for etching or deposition, the distribution of plasma within the process chamber has a significant impact on the uniformity of the etching results.

[0003] The plasma generator outputs radio frequency (RF) power through an RF power supply, which is then connected to the coil electrodes via a matching converter. The RF power, through inductive coupling of the coil electrodes, generates plasma within the process chamber via a dielectric window. To control the plasma distribution within the process chamber, the current in the coil electrodes needs to be controlled, thereby controlling the power distribution of the coil electrodes and ultimately the plasma distribution within the process chamber to achieve etching uniformity. However, adjusting the input current at the coil electrodes to regulate the current flowing through them is relatively complex and can lead to instability and poor etching uniformity. Summary of the Invention

[0004] This invention provides a plasma generating device and semiconductor processing equipment. By adjusting the axial extension and retraction of the coil electrodes, the distribution of plasma in the process chamber is adjusted to achieve uniform etching of the wafer.

[0005] In a first aspect, embodiments of the present invention provide a plasma generating device for use in semiconductor process equipment, disposed on the side of the dielectric window away from the process chamber, the plasma generating device comprising:

[0006] A first electrode assembly is located on the side of the dielectric window opposite to the process chamber, and the first electrode assembly includes:

[0007] A coil electrode, the coil electrode being helical in shape, the coil electrode including a first end and a second end opposite each other in the axial direction, the first end being for connection to an RF power supply via a matching connector, and the second end being for fixed connection to the dielectric window; and

[0008] A displacement component, wherein the driving end of the displacement component is drivenly connected to the first end, and is used to drive the coil electrode to extend and retract axially.

[0009] In a second aspect, the present invention also discloses a semiconductor process apparatus, comprising: a process chamber, a dielectric window, a plasma generator, a matching device, and a radio frequency power supply. The dielectric window is disposed on the process chamber, the plasma generator is disposed on the side of the dielectric window away from the process chamber, and the radio frequency power supply is connected to the plasma generator through the matching device. The plasma generator is the plasma generator described in the first aspect.

[0010] The technical solution adopted in this invention can achieve the following technical effects:

[0011] The plasma generating device disclosed in this invention is located on a side away from the process chamber, allowing plasma to be generated within the process chamber under the action of the plasma generating device. The plasma generating device includes a first electrode assembly, which includes a coil electrode and a displacement assembly. By configuring the coil electrode in a spiral shape, the coil electrode can include a first end and a second end arranged axially opposite each other. The first end is used to connect to an RF power supply through a matching converter, and the second end is used to be fixedly connected to a dielectric window. By providing the displacement assembly, the driving end of the displacement assembly can be driven to connect to the first end, thereby causing the coil electrode to extend and retract axially under the driving action of the driving end. Since the magnitude of the current flowing through the coil electrode depends on the impedance value of the coil electrode, that is, the inductance value of the coil electrode, the larger the inductance value, the smaller the current flowing through the coil electrode, and vice versa. In the coil electrode, the inductance value is inversely proportional to the axial length of the coil electrode. Therefore, by driving the coil electrode to extend and retract axially through the displacement assembly, the inductance of the coil electrode can be adjusted, thereby adjusting the magnitude of the current in the coil electrode, and thus adjusting the power distribution on the coil electrode. This effectively regulates the distribution of plasma in the process chamber below the dielectric window, thereby achieving uniformity in wafer etching. In this embodiment of the invention, while adjusting the plasma distribution within the process chamber, the second end of the coil electrode is fixedly connected to the dielectric window, meaning the relative position between the second end and the dielectric window remains unchanged. Therefore, when the coil electrode extends and retracts axially, the composition of the plasma within the process chamber remains stable. Since adjusting the plasma distribution within the process chamber is achieved simply by adjusting the axial extension and retraction of the coil electrode, the adjustment method is simpler. Furthermore, the simple structure of the displacement component and the coil electrode effectively reduces the complexity of the equipment, thereby significantly reducing its cost. Attached Figure Description

[0012] Other features, objects, and advantages of the invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings, in which the same or similar reference numerals denote the same or similar features, and the drawings are not drawn to scale.

[0013] Figure 1 This is a schematic diagram of the structure of a plasma generator in related technologies;

[0014] Figure 2 This is a schematic diagram of the structure of a semiconductor process apparatus according to an embodiment of the present invention;

[0015] Figure 3 This is a schematic diagram of the structure of a semiconductor process apparatus in one state according to an embodiment of the present invention;

[0016] Figure 4 This is a schematic diagram of the structure of a semiconductor process apparatus in another state according to one embodiment of the present invention;

[0017] Figure 5 This is a schematic diagram of the structure of the coil electrode in a plasma generator according to an embodiment of the present invention;

[0018] Figure 6 This is a schematic diagram of the structure of a coil in a plasma generator according to an alternative embodiment of the present invention;

[0019] Figure 7 This is an equivalent circuit diagram of the first electrode assembly in a plasma generating device according to an embodiment of the present invention;

[0020] Figure 8 This is a schematic diagram of the connection between the coil electrode and the coil support in a plasma generator according to an embodiment of the present invention;

[0021] Figure 9 This is a top view schematic diagram of a grounding ring in a plasma generator according to an embodiment of the present invention;

[0022] Figure 10 This is a system schematic diagram of a semiconductor process apparatus according to an embodiment of the present invention.

[0023] Explanation of reference numerals in the attached figures:

[0024] 100 - Process chamber, 101 - Inner coil, 102 - Outer coil, 110 - Observation window

[0025] 200-Media Window

[0026] 300-Second electrode,

[0027] 400-First electrode assembly, 410-Coil electrode, 411-First end, 4111-Input end, 412-Second end, CL-Coil, 410a-First coil electrode, 410b-Second coil electrode, 420-Displacement assembly, 421-Coil bracket, 4211-Mounting plate, 4212-Connection structure, 422-Drive device, 430-Shielding plate, 440-Housing, 450-Electrical connection strip.

[0028] 500-Grounding Ring

[0029] 600-Spectrometer

[0030] 700-matcher

[0031] 800 RF power supply. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0033] In this document, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, without necessarily requiring or implying any such actual relationship or order between these entities or operations.

[0034] The technical solutions disclosed in the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0035] Plasma generating devices in related technologies, such as Figure 1 As shown, the RF power supply 800 outputs RF power, which is connected to the inner coil 101 and the outer coil 102 via a matching connector 700. The matching connector 700 is transitionally connected to the inner coil 101 and the outer coil 102 via an electrical connecting strip 450. The inner coil 101 and the outer coil 102 are each composed of two sets of identical coils connected in parallel to achieve a uniform voltage distribution along the radial direction. Through the matching effect of the matching connector 700, the RF power generates inductively coupled plasma in the process chamber 100 through the dielectric window 200 via the inductive coupling effect of the inner coil 101 and the outer coil 102. The radial uniformity of the plasma can be controlled by adjusting the current ratio of the inner coil 101 and the outer coil 102.

[0036] Since this plasma generator adjusts the uniformity of the etching result by changing the power distribution of the inner coil 101 and the outer coil 102 by changing the current ratio of the inner coil 101 and the outer coil 102, thereby changing the plasma density in the process chamber 100 below the dielectric window 200, at least one dual-output RF matching system with power distribution is required, or two separate single-output RF systems are required. This makes the system structure relatively complex and the cost relatively high.

[0037] To resolve the technical problems existing in the aforementioned related technologies, please refer to... Figures 2 to 10 This invention provides a plasma generating device for use in semiconductor process equipment, disposed on the side of the dielectric window 200 away from the process chamber 100. This plasma generating device enables the generation of inductively coupled plasma (ICP) within the process chamber 100, and can be used in wafer fabrication processes such as etching and deposition.

[0038] Figure 2 This is a schematic diagram of a plasma generating apparatus according to an embodiment of the present invention. The plasma generating apparatus includes a first electrode assembly 400. The first electrode assembly 400 is located on the side of the dielectric window 200 opposite to the process chamber 100. The first electrode assembly 400 includes a coil electrode 410 and a displacement assembly 420.

[0039] The coil electrode 410 is helical, but it can also be other shapes; no specific limitation is made here. The coil electrode 410 includes a first end 411 and a second end 412 that are axially opposed. The first end 411 can be used to connect to the RF power supply 800 via a matching adapter 700, and the second end 412 can be used to fix it to the dielectric window 200. Specifically, there can be one coil electrode 410, or multiple coil electrodes 410 can be used in combination. The diameters of the multiple coil electrodes 410 can be different, and they can be coaxially arranged. The number of coils CL of the coil electrode 410 can be one, or the number of coils CL of the coil electrode 410 can be multiple. No specific limitation is made here regarding the number of coils CL of the coil electrode 410.

[0040] The displacement component 420 has a driving end, which can be drivenly connected to the first end 411. The displacement component 420 is used to drive the coil electrode 410 to extend and retract along the axial direction. Specifically, the displacement component 420 can be a hydraulic telescopic component, a pneumatic telescopic component, a shape memory alloy, etc., and no specific limitation is made to the displacement component 420 here.

[0041] For coil electrode 410, the magnitude of the current flowing through coil electrode 410 depends on the impedance value of coil electrode 410, that is, the inductance value of coil electrode 410. The larger the inductance value, the smaller the current flowing through coil electrode 410, and vice versa. The formula for calculating the inductance of coil electrode 410 is:

[0042]

[0043] Where μ0 is the vacuum permeability; N is the number of turns of the coil CL, that is, the number of coil CLs included in the coil electrode 410; r is the radius of the coil electrode 410; and l is the axial length of the coil electrode 410.

[0044] As can be seen, in the coil electrode 410, the inductance is inversely proportional to the axial length of the coil electrode 410. Therefore, by adjusting the axial length of the coil electrode 410 through the displacement component 420, the inductance of the coil electrode 410 can be adjusted, thereby adjusting the current flowing through the coil electrode 410, and thus adjusting the power distribution on the coil electrode 410. This effectively regulates the plasma distribution within the process chamber 100 below the dielectric window 200, thereby achieving uniformity in wafer etching. In this embodiment of the invention, while adjusting the plasma distribution within the process chamber 100, since the second end 412 of the coil electrode 410 is fixedly connected to the dielectric window 200, i.e., the relative position of the second end 412 and the dielectric window 200 remains unchanged, the composition of the plasma within the process chamber 100 can be kept stable when the coil electrode 410 extends and retracts axially. Since the distribution of plasma in the process chamber 100 is adjusted simply by adjusting the axial extension and retraction of the coil electrode 410, the adjustment method is simpler. Moreover, the simple structure of the displacement component 420 and the coil electrode 410 can effectively reduce the complexity of the equipment, thereby effectively reducing the cost of the equipment.

[0045] In one optional embodiment, the number of coil electrodes 410 can be at least two, with each coil electrode 410 having a different diameter and being coaxially arranged. Specifically, there can be two coil electrodes 410, which can be a first coil electrode 410a and a second coil electrode 410b, wherein the second coil electrode 410b is arranged around the outer periphery of the first coil electrode 410a. In other embodiments, there can be three, four, or other numbers of coil electrodes 410.

[0046] By setting at least two coil electrodes 410 such that the diameters of the at least two coil electrodes 410 are different from each other and are coaxially arranged, the at least two coil electrodes 410 arranged coaxially make the coverage area of ​​the coil electrodes 410 relative to the process chamber 100 larger and the distribution more uniform, so that when current passes through the coil electrodes 410, the distribution of plasma generated in the process chamber 100 is also relatively uniform.

[0047] Furthermore, the number of displacement components 420 can be at least two, with each displacement component 420 corresponding to a coil electrode 410. In this case, the axial length of each coil electrode 410 can be adjusted independently. Correspondingly, the plasma distribution in the region corresponding to each coil electrode 410 can be controlled and adjusted independently. This allows for the adjustment of the axial extension and retraction of the inner and outer coil electrodes 410, thereby adjusting the current magnitude of the inner and outer coil electrodes 410. This enables the control of the uniformity of plasma distribution along the radial direction of the coil electrodes 410 within the process chamber 100 by adjusting the current ratio of the inner and outer coil electrodes 410. This allows for more precise adjustment of the plasma distribution within the process chamber 100 by the coil electrodes 410, facilitating more uniform wafer processing.

[0048] Figure 3 This is a schematic diagram of the structure of a plasma generator according to an embodiment of the present invention in one state. Figure 4 This is a schematic diagram of the structure of a plasma generator according to one embodiment of the present invention in another state. Figure 3 In this state, by adjusting the displacement component 420, the axial length of the first coil electrode 410a is reduced, and the axial length of the second coil electrode 410b is increased, with the axial length of the second coil electrode 410b being greater than the axial length of the first coil electrode 410a. For example... Figure 4 In this state, by adjusting the displacement component 420, the axial length of the first coil electrode 410a is increased, and the axial length of the second coil electrode 410b is decreased, with the axial length of the first coil electrode 410a being greater than that of the second coil electrode 410b. By adjusting the axial length of the coil electrodes 410, the proportion of current flowing through each coil electrode 410 is adjusted, thereby adjusting the distribution of plasma particles within the process chamber 100.

[0049] In some embodiments, the first electrode assembly 400 further includes a housing 440 and a shielding plate 430. The housing 440 is used to cover the dielectric window 200, and the shielding plate 430 can be disposed inside the housing 440 and spaced apart from the dielectric window 200. The coil electrode 410 can be located on the side of the shielding plate 430 facing the dielectric window 200. Specifically, the shielding plate 430 can be a metal shielding plate or a shielding plate 430 made of other materials; no specific limitation is placed on the material of the shielding plate 430. The shielding plate 430 can be connected to the housing 440, and the displacement assembly 420 can be disposed on the shielding plate 430.

[0050] The housing 440 covers the dielectric window 200, and the shielding plate 430 is spaced apart from the dielectric window 200, thus forming a receiving space for the coil electrode 410. The receiving space between the shielding plate 430 and the dielectric window 200 can also be called a coil box. By setting the shielding plate 430 and the housing 440, interference from the matching unit 700, the RF power supply 800, and external charges on the coil electrode 410 can be shielded, thereby ensuring the accuracy of the power distribution of the coil electrode 410 and achieving precise control of the plasma distribution within the process chamber 100.

[0051] In some embodiments, the length of the coil electrode 410 along the axial direction has an upper limit value. To ensure a safe distance from the ground, the upper limit value of the length of the coil electrode 410 along the axial direction is L1 = H - E1, where H is the distance between the shielding plate 430 and the dielectric window 200, and E1 is a preset margin value. The preset margin value E1 can be selected in the range of 20 mm to 30 mm. In one example, the upper limit value of the length of the coil electrode 410 along the axial direction is L1 = H - 25 mm.

[0052] In some embodiments, the displacement component 420 may include a coil support 421 and a drive device 422. The coil support 421 is connected to the first end 411 of the coil electrode 410. The drive device 422 may be mounted on the shielding plate 430, and the drive device 422 has a drive end connected to the coil support 421, enabling the coil support 421 to move axially along the coil electrode 410. The drive device 422 may be a motor drive device, and the drive device 422 includes a drive end, which may be, for example, a telescopically movable portion of the drive device 422. The drive device 422 may be, for example, a servo motor, which drives the coil support 421 to move, thereby causing the first end 411 of the coil electrode 410 to move automatically and precisely along the axial direction of the coil electrode 410, achieving accurate and automated control of the axial length of the coil electrode 410.

[0053] In some embodiments, the first electrode assembly 400 further includes an electrical connecting strip 450, which may be disposed within the housing 440 and located on the side of the shielding plate 430 opposite to the coil electrode 410. The electrical connecting strip 450 can be used to electrically connect the matching device 700 to the first end 411 of the coil electrode 410. The electrical connecting strip 450 may be a flexible structure, capable of stretching and bending when the coil electrode 410 moves axially, thereby improving the connection stability between the matching device 700 and the coil electrode 410. By providing the electrical connecting strip 450, the matching device 700 is connected to the coil electrode 410 via the electrical connecting strip 450, effectively solving the connection problem between the matching device 700 and the coil electrode 410.

[0054] Figure 8 This is a schematic diagram of the connection between the coil electrode 410 and the coil support 421 in a plasma generator according to an embodiment of the present invention. In some embodiments, the coil support 421 includes a mounting plate 4211 and a connecting structure 4212. The connecting structure 4212 connects the mounting plate 4211 to the driving end of the driving device 422. The coil electrode 410 may include an input end 4111 located at the first end 411, which can pass through the mounting plate 4211 and be inserted into the electrical connecting strip 450. Specifically, the mounting plate 4211 may be arranged parallel to the dielectric window 200. The electrical connecting strip 450 may be provided with a socket that mates with the input end 4111, which can be inserted into the socket to electrically connect the coil electrode 410 and the electrical connecting strip 450. The drive end of the drive device 422 drives the mounting plate 4211 to move through the connection structure 4212, so that the input end 4111 of the first end 411 of the coil electrode 410 moves together with the mounting plate 4211, thereby realizing the axial extension and retraction of the coil electrode 410.

[0055] The mounting plate 4211 is connected to the drive end via the connecting structure 4212, allowing the mounting plate 4211 to move under the drive of the drive end. This changes the axial compression of the coil electrode 410, thereby adjusting the axial length of the coil electrode 410. The input end 4111 passes through the mounting plate 4211 and is inserted into the electrical connecting strip 450, ensuring the stability of the electrical connection between the coil electrode 410 and the matching device 700 as the input end 4111 moves with the mounting plate 4211.

[0056] like Figure 2 In some embodiments, the plasma generating device further includes a grounding ring 500. Figure 9This is a top view schematic diagram of a grounding ring 500 in a plasma generator according to an embodiment of the present invention. The grounding ring 500 can be installed on the dielectric window 200. The grounding ring 500 is fixedly connected to the second end 412 of the coil electrode 410, for grounding the second end 412 of the coil electrode 410. The coil electrode 410 is fixedly connected to the grounding ring 500, and the grounding ring 500 is installed on the dielectric plate, so that the second end 412 of the coil electrode 410 is fixedly connected to the dielectric window 200 through the grounding ring 500. The grounding ring 500 ensures that the second end 412 of the coil electrode 410 is grounded, and at the same time, the relative position of the second end 412 of the coil electrode 410 and the dielectric window 200 remains unchanged in physical structure, thereby ensuring the stability of the plasma composition in the process chamber 100.

[0057] like Figure 2 In some embodiments, the plasma generating device further includes a spectrometer 600. The spectrometer 600 is located outside the process chamber 100. The process chamber 100 may be provided with an observation window 110, through which the spectrum generated by the plasma within the process chamber 100 can enter the spectrometer 600. By linking the spectrometer 600 with the displacement component 420, the feedback information from the spectrometer 600 can accurately guide and control the displacement of the displacement component 420, facilitating rapid and precise control of the plasma density distribution within the process chamber 100.

[0058] In some embodiments, coil electrode 410 may include a single coil CL. In some embodiments, coil electrode 410 may also include at least two coils CL connected in parallel with each other. There is no specific limitation on the number of coils CL of coil electrode 410. Figure 5 The first coil electrode 410a includes two coils CL connected in parallel with each other, and the second coil electrode 410b includes three coils CL connected in parallel with each other. Using at least two coils CL for the coil electrode 410 can improve the uniformity of the electromagnetic field of the coil electrode 410.

[0059] exist Figure 5 In the embodiments described, a circular cross-section of the coil CL is used as an example for illustration. In other embodiments, the cross-section of the coil CL can be various forms such as square, rectangular (sheet-like), etc. For example... Figure 6 This is a schematic diagram of the structure of coil CL in a plasma generator according to an alternative embodiment of the present invention. Figure 6 In the embodiments described, the cross-section of the coil CL is a rectangular sheet.

[0060] This invention also provides a semiconductor process apparatus, which includes a process chamber 100, a dielectric window 200, a plasma generator, a matching unit 700, and a radio frequency power supply 800. The dielectric window 200 may be disposed on the process chamber 100, and the plasma generator is disposed on the side of the dielectric window 200 away from the process chamber 100. The radio frequency power supply 800 is connected to the plasma generator through the matching unit 700. The plasma generator is the plasma generator in any of the above embodiments.

[0061] Specifically, the dielectric window 200 can be made of materials such as quartz and ceramic; there are no specific limitations on the material of the dielectric window 200. The semiconductor process equipment of this embodiment can be applied to radio frequency environments such as 13.56MHz, 2MHz, and 27.12MHz.

[0062] In semiconductor process equipment, radio frequency power is output through radio frequency power supply 800 and connected to plasma generator through matching device 700, so that coil electrode 410 in plasma generator is coupled, thereby generating plasma in process chamber 100 through dielectric window 200, thus effectively realizing the generation of plasma in process chamber 100.

[0063] Furthermore, the matching device 700 can be a single-output matching device, with the first end 411 of the coil electrode 410 electrically connected to the single-output matching device and the second end 412 of the coil electrode 410 grounded.

[0064] Figure 10 This is a system schematic diagram of the semiconductor process equipment of this application. The RF power supply 800 outputs RF power, which is connected to the first coil electrode 410a and the second coil electrode 410b via a matching converter 700. The matching converter 700 is a single-output matching converter, with its output terminals connected in parallel to the first coil electrode 410a and the second coil electrode 410b respectively. To ensure uniformity, the number of turns of the coils CL of the first coil electrode 410a and the second coil electrode 410b is generally chosen to be a multi-turn parallel structure. By adjusting the compression of the first coil electrode 410a and the second coil electrode 410b, the inductance value of the first coil electrode 410a and the second coil electrode 410b is changed, thereby adjusting the current ratio of the first coil electrode 410a and the second coil electrode 410b, and thus changing the uniformity of the plasma distribution within the process chamber 100.

[0065] like Figure 1In related technologies, the current ratio adjustment in the inner coil 101 and the outer coil 102 is adjusted by setting an adjustable capacitor in the matching unit 700. That is to say, the matching unit 700 has the functions of adjusting impedance and adjusting current. Therefore, at least one dual-output RF matching system with power distribution is required, or two separate single-output RF systems are required.

[0066] In this application, the matching unit 700 is a single-output matching unit. A single-output matching unit cannot simultaneously adjust the current ratio in the first coil electrode 410a and the second coil electrode 410b. Therefore, the coil electrode 410 is axially extended and retracted by the displacement component 420, thereby changing the impedance value of the coil electrode 410 and thus changing the current passing through the coil electrode 410. Therefore, it is not necessary to use multiple sets of RF power supplies 800 and matching units 700, nor is it necessary to have a power distribution dual-output or multi-output matching unit, thereby reducing the configuration requirements of the RF power supply 800 and matching unit 700 and reducing costs.

[0067] In some embodiments, the semiconductor process equipment may further include a second electrode 300, which may be disposed within the process chamber 100 and may be disposed parallel to and spaced apart from the dielectric substrate. In some embodiments, the second electrode 300 may be reused as a wafer carrier, and the wafer may be placed on the second electrode 300 when it is processed within the process chamber 100.

[0068] The above description is merely an embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A plasma generating device for use in semiconductor process equipment, disposed on the side of the dielectric window away from the process chamber, characterized in that, The plasma generating device includes: A first electrode assembly is located on the side of the dielectric window opposite to the process chamber, and the first electrode assembly includes: A coil electrode, the coil electrode being helical in shape, the coil electrode including a first end and a second end opposite each other in the axial direction, the first end being for connection to an RF power supply via a matching connector, and the second end being for fixed connection to the dielectric window; and A displacement component, wherein the driving end of the displacement component is drivenly connected to the first end, and is used to drive the first end to move axially on the coil electrode so that the coil electrode extends and retracts axially to adjust the inductance of the coil electrode.

2. The plasma generating device according to claim 1, characterized in that, The number of coil electrodes is at least two, and the diameters of each coil electrode are different and they are arranged coaxially.

3. The plasma generating device according to claim 2, characterized in that, The number of displacement components is at least two, and the displacement components and the coil electrodes are arranged in a one-to-one correspondence.

4. The plasma generating device according to claim 1, characterized in that, The first electrode assembly further includes: The housing and the shielding plate are provided, wherein the housing is used to cover the dielectric window, the shielding plate is disposed inside the housing and spaced apart from the dielectric window, and the coil electrode is located on the side of the shielding plate facing the dielectric window.

5. The plasma generating device according to claim 4, characterized in that, The displacement component includes: Coil support, the coil support being connected to the first end; and A driving device is mounted on the shielding plate. The driving device has a driving end, which is connected to the coil support, so that the coil support can move axially on the coil electrode.

6. The plasma generating apparatus according to claim 5, characterized in that, The first electrode assembly further includes: An electrical connection strip, disposed within the housing and located on the side of the shielding plate opposite to the coil electrode, is used to electrically connect the matching device to the first end.

7. The plasma generating apparatus according to claim 6, characterized in that, The coil support includes a mounting plate and a connecting structure, wherein the connecting structure connects the mounting plate to the driving end. The coil electrode includes an input terminal located at the first end, which passes through the mounting plate and is inserted into the electrical connection strip.

8. The plasma generating apparatus according to claim 1, characterized in that, Also includes: A grounding ring is used to be installed on the dielectric window, and the grounding ring is fixedly connected to the second end to ground the second end.

9. The plasma generating apparatus according to any one of claims 1-8, characterized in that, The coil electrode comprises a single coil; or The coil electrodes comprise at least two coils connected in parallel with each other.

10. A semiconductor process apparatus, comprising: The invention comprises a process chamber, a dielectric window, a plasma generator, a matching unit, and a radio frequency power supply. The dielectric window is disposed on the process chamber, the plasma generator is disposed on the side of the dielectric window away from the process chamber, and the radio frequency power supply is connected to the plasma generator through the matching unit. The plasma generator is characterized in that it is the plasma generator according to any one of claims 1-9.

11. The semiconductor process equipment according to claim 10, characterized in that, The matching device is a single-output matching device, with the first end electrically connected to the single-output matching device and the second end grounded.

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