A high power synthesizer for ultrashort waves

Abstract

The present invention provides a high-power synthesizer for ultrashort waves, comprising a dielectric substrate, a main microstrip patch arranged on the upper surface of the dielectric substrate, and a ground plane arranged on the lower surface of the dielectric substrate; the main microstrip patch is a U-shaped structure, and a combining microstrip patch is arranged on the middle part of the main microstrip patch on a side different from its opening; the main microstrip patch is provided with a first edge microstrip patch at one end, and a second edge microstrip patch at the other end, the first edge microstrip patch and the second edge microstrip patch are arranged correspondingly, and the first edge microstrip patch and the second edge microstrip patch are connected by a connecting component. The high-power synthesizer for ultrashort waves described in the present invention uses a new architecture combining microstrip lines and coaxial cables. The design of this architecture leads one end of the isolation resistor to the ground, which is more conducive to the heat dissipation of the isolation resistor than the architecture in which the isolation resistor is embedded, so that the synthesizer has a larger combined power.

Description

Technical Field

[0001] The invention belongs to the field of high-power synthesis, and in particular relates to a high-power synthesizer applied to ultrashort waves. Background Art

[0002] With the continuous improvement of the design and manufacturing level of microwave transistors, all-solid-state transmitters are constantly replacing the original electron tube transmitters in the fields of radar, wireless communication, electronic countermeasures, etc. However, the output power of microwave transistor amplifiers is much smaller than the output power of vacuum device amplifiers, so solid-state transmitters must adopt a structure composed of multiple microwave transistors in parallel. The key component of this synthetic structure is the ultra-kilowatt high-power synthesizer. If the coaxial waveguide structure is adopted, the structure will be very large due to the long wavelength of ultra-short waves. If the Wilkinson synthesizer structure is adopted, the isolation resistor in the structure is embedded in the circuit network. Considering the heat dissipation and power tolerance of the isolation resistor, the synthetic power of the Wilkinson synthesizer generally does not exceed 100W (continuous wave), so it is impossible to achieve a synthetic power of ultra-kilowatts. Summary of the invention

[0003] In view of this, the present invention aims to provide a high-power synthesizer applied to ultra-short waves, so as to solve the problem of low synthesized power in the ultra-short wave frequency band of existing synthesizers.

[0004] To achieve the above object, the technical solution of the present invention is achieved as follows:

[0005] A high-power synthesizer for ultrashort waves comprises a dielectric substrate, a main microstrip patch arranged on the upper surface of the dielectric substrate, and a ground plane arranged on the lower surface of the dielectric substrate; the main microstrip patch is a U-shaped structure, and a combining microstrip patch is arranged on a side of the middle of the main microstrip patch that is different from the opening thereof; a first edge microstrip patch is arranged at one end of the main microstrip patch, and a second edge microstrip patch is arranged at the other end, the first edge microstrip patch and the second edge microstrip patch are arranged correspondingly, and the first edge microstrip patch and the second edge microstrip patch are connected by a connecting component;

[0006] The connection assembly includes a first connection microstrip patch, a first coaxial cable inner conductor, a first transfer microstrip patch, a second coaxial cable inner conductor, a second transfer microstrip patch, a third coaxial cable inner conductor, and a second connection microstrip patch connected in sequence; one end of the first connection microstrip patch is connected to the first edge microstrip patch, and the other end is connected to the first coaxial cable inner conductor; one end of the second connection microstrip patch is connected to the second edge microstrip patch, and the other end is connected to the third coaxial cable inner conductor;

[0007] The connection assembly also includes a fourth coaxial cable inner conductor, a third transfer microstrip patch, a fifth coaxial cable inner conductor, a fourth transfer microstrip patch, and a sixth coaxial cable inner conductor connected in sequence; one end of the fourth coaxial cable inner conductor is connected to the first transfer microstrip patch, and the other end is connected to the third transfer microstrip patch, and the third transfer microstrip patch is connected to the ground plane through a first load resistor; one end of the sixth coaxial cable inner conductor is connected to the second transfer microstrip patch, and the other end is connected to the fourth transfer microstrip patch, and the fourth transfer microstrip patch is connected to the ground plane through a second load resistor;

[0008] The outer conductors of the first coaxial cable, the second coaxial cable, the third coaxial cable, the fourth coaxial cable, the fifth coaxial cable and the sixth coaxial cable are all connected to the ground plane.

[0009] Furthermore, one end of each of the first edge microstrip patch and the second edge microstrip patch is connected to the main microstrip patch, and the other end is arranged 0.2 mm away from the edge of the dielectric substrate.

[0010] Furthermore, one end of the combining microstrip patch is connected to the main microstrip patch, and the other end is arranged 0.2 mm away from the edge of the dielectric substrate.

[0011] Furthermore, the main microstrip patch includes a first sub-patch, a first fan-shaped patch, a second sub-patch, a third sub-patch, a second fan-shaped patch and a fourth sub-patch connected in sequence, wherein one end of the first sub-patch is connected to the first fan-shaped patch, and the other end is connected to the first edge microstrip patch; the combining microstrip patch is arranged corresponding to the connection between the second sub-patch and the third sub-patch; one end of the fourth sub-patch is connected to the second fan-shaped patch, and the other end is connected to the second edge microstrip patch.

[0012] Furthermore, the angles of the first fan-shaped patch and the second fan-shaped patch are both 90 degrees.

[0013] Furthermore, the connecting component is arranged corresponding to the groove of the main microstrip patch.

[0014] Furthermore, the dielectric substrate is made of polytetrafluoroethylene and has a dielectric constant of 2.55.

[0015] Furthermore, the ground plane is 0.2 mm away from the edge of the dielectric substrate on all sides.

[0016] Furthermore, the characteristic impedances of the first coaxial cable, the third coaxial cable, the fourth coaxial cable and the sixth coaxial cable are all 50Ω; the characteristic impedances of the second coaxial cable and the fifth coaxial cable are all 25Ω.

[0017] Furthermore, the resistance of the first load resistor and the second load resistor are both 50Ω, and the rated power is both 300W.

[0018] Compared with the prior art, the high-power synthesizer for ultrashort waves described in the present invention has the following advantages:

[0019] (1) The high-power synthesizer for ultrashort waves described in the present invention uses a novel architecture combining microstrip lines and coaxial cables. The design of this architecture leads one end of the isolation resistor to the ground, which is more conducive to the heat dissipation of the isolation resistor than the architecture in which the isolation resistor is embedded, so that the synthesizer has a larger synthesis power. The two-stage coaxial cable line is designed in the architecture to increase the relative bandwidth and improve the port isolation. The use of coaxial cables instead of microstrip lines can reduce the size of the synthesizer. In addition, this synthesizer has the characteristics of novel and simple structure and low manufacturing cost.

[0020] (2) The high-power synthesizer for ultrashort waves described in the present invention inherits the advantages of the Wilkinson combiner, such as simple manufacture, high isolation, low cost, and easy multi-stage cascading to expand bandwidth, and solves the disadvantage of the Wilkinson combiner with low combined power. In addition, the synthesizer has the characteristics of high combined power in the coaxial band and achieves the goal of miniaturization. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The accompanying drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the accompanying drawings:

[0022] Figure 1 This is a schematic structural diagram of a high-power synthesizer applied to ultrashort waves according to an embodiment of the present invention;

[0023] Figure 2 This is a schematic structural diagram of the lower surface of a dielectric substrate in a high-power synthesizer for ultrashort waves according to an embodiment of the present invention;

[0024] Figure 3 A return loss curve diagram of a high-power synthesizer applied to ultrashort waves described in this embodiment;

[0025] Figure 4 A transmission loss curve diagram of a high-power synthesizer applied to ultrashort waves described in this embodiment;

[0026] Figure 5 This is a branch port isolation curve diagram of a high-power synthesizer applied to ultra-short waves described in this embodiment.

[0027] Description of reference numerals:

[0028] 1. a combining microstrip patch; 2. a second sub-patch; 3. a third sub-patch; 4. a first fan-shaped patch; 5. a second fan-shaped patch; 6. a first sub-patch; 7. a fourth sub-patch; 8. a first edge microstrip patch; 9. a second edge microstrip patch; 10. a first connecting microstrip patch; 11. a second connecting microstrip patch; 12. a first transfer microstrip patch; 13. a second transfer microstrip patch; 14. a third transfer microstrip patch; 15. a fourth transfer microstrip patch; 16. a first coaxial cable; 17. a third coaxial cable; 18. a fourth coaxial cable; 19. a sixth coaxial cable; 20. a second coaxial cable; 21. a fifth coaxial cable; 22. a first load resistor; 23. a second load resistor; 24. a dielectric substrate; 25. a ground plane. DETAILED DESCRIPTION

[0029] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0030] A high power synthesizer for ultrashort waves, such as Figures 1 to 5 As shown, it includes a dielectric substrate 24, a main microstrip patch arranged on the upper surface of the dielectric substrate 24, and a ground plane 25 arranged on the lower surface of the dielectric substrate 24; the main microstrip patch is a U-shaped structure, and a combining microstrip patch 1 is arranged on the side of the middle part of the main microstrip patch different from its opening; a first edge microstrip patch 8 is arranged at one end of the main microstrip patch, and a second edge microstrip patch 9 is arranged at the other end, the first edge microstrip patch 8 and the second edge microstrip patch 9 are arranged correspondingly, and the first edge microstrip patch 8 and the second edge microstrip patch 9 are connected by a connecting component.

[0031] Among them, the connecting component includes a first connecting microstrip patch 10, an inner conductor of a first coaxial cable 16, a first transition microstrip patch 12, an inner conductor of a second coaxial cable 20, a second transition microstrip patch 13, an inner conductor of a third coaxial cable 17, and a second connecting microstrip patch 11 which are connected in sequence; one end of the first connecting microstrip patch 10 is connected to the first edge microstrip patch 8, and the other end is connected to the inner conductor of the first coaxial cable 16; one end of the second connecting microstrip patch 11 is connected to the second edge microstrip patch 9, and the other end is connected to the inner conductor of the third coaxial cable 17.

[0032] In addition, the connection component also includes an inner conductor of a fourth coaxial cable 18, a third transition microstrip patch 14, an inner conductor of a fifth coaxial cable 21, a fourth transition microstrip patch 15, and an inner conductor of a sixth coaxial cable 19, which are connected in sequence; one end of the inner conductor of the fourth coaxial cable 18 is connected to the first transition microstrip patch 12, and the other end is connected to the third transition microstrip patch 14, and the third transition microstrip patch 14 is connected to the ground plane 25 through a first load resistor 22; one end of the inner conductor of the sixth coaxial cable 19 is connected to the second transition microstrip patch 13, and the other end is connected to the fourth transition microstrip patch 15, and the fourth transition microstrip patch 15 is connected to the ground plane 25 through a second load resistor 23; the outer conductors of the first coaxial cable 16, the second coaxial cable 20, the third coaxial cable 17, the fourth coaxial cable 18, the fifth coaxial cable 21, and the sixth coaxial cable 19 are all connected to the ground plane 25.

[0033] Exemplarily, the length and width dimensions of the first transfer microstrip patch 12 , the second transfer microstrip patch 13 , the third transfer microstrip patch 14 , and the fourth transfer microstrip patch 15 are all 8.6 mm×8.6 mm.

[0034] Optionally, one end of the first edge microstrip patch 8 and the second edge microstrip patch 9 are connected to the main microstrip patch, and the other end is set 0.2 mm away from the edge of the dielectric substrate 24. One end of the combiner microstrip patch 1 is connected to the main microstrip patch, and the other end is set 0.2 mm away from the edge of the dielectric substrate 24. Exemplarily, the length and width of the first edge microstrip patch 8, the second edge microstrip patch 9 and the combiner microstrip patch 1 are all 15 mm×8.6 mm.

[0035] Optionally, the main microstrip patch includes a first sub-patch 6, a first fan-shaped patch 4, a second sub-patch 2, a third sub-patch 3, a second fan-shaped patch 5 and a fourth sub-patch 7 connected in sequence, wherein one end of the first sub-patch 6 is connected to the first fan-shaped patch 4, and the other end is connected to the first edge microstrip patch 8; the combining microstrip patch 1 is arranged corresponding to the connection between the second sub-patch 2 and the third sub-patch 3; one end of the fourth sub-patch 7 is connected to the second fan-shaped patch 5, and the other end is connected to the second edge microstrip patch 9.

[0036] Exemplarily, the first sub-patch 6, the second sub-patch 2, the third sub-patch 3 and the fourth sub-patch 7 are all rectangular microstrip patches, and the width of the above sub-patches is 5.3 mm. Among them, the length of the second sub-patch 2 and the third sub-patch 3 is 64.3 mm, and the length of the first sub-patch 6 and the fourth sub-patch 7 is 158.8 mm.

[0037] Optionally, the angles of the first sector-shaped patch 4 and the second sector-shaped patch 5 are both 90 degrees, and the centerline radius is 5.2 mm.

[0038] In actual application, the above-mentioned connecting component corresponds to the groove setting of the main microstrip patch.

[0039] Optionally, the dielectric substrate 24 is made of polytetrafluoroethylene, with a dielectric constant of 2.55, and a length, width and height of 205.6 mm×173.6 mm×3 mm. Exemplarily, the ground plane 25 is 0.2 mm away from the edge of the dielectric substrate 24 on all sides.

[0040] Optionally, the characteristic impedance of the first coaxial cable 16, the third coaxial cable 17, the fourth coaxial cable 18 and the sixth coaxial cable 19 are all 50Ω, the specific model is SFX-50-3, and the lengths are all 208mm. In addition, the characteristic impedance of the second coaxial cable 20 and the fifth coaxial cable 21 are all 25Ω, the specific model is SFX-25-2, and the lengths are all 511mm.

[0041] Optionally, the resistance of the first load resistor 22 and the second load resistor 23 are both 50Ω, and the rated power is both 300W.

[0042] Figure 3 This is a return loss curve diagram of a high-power synthesizer applied to ultrashort waves described in this embodiment. Since the main microstrip patch is a symmetrical structure along the center line, the curves of the first microstrip chip port S22 and the second microstrip chip port S33 are the same. Figure 3 The curve diagram of the combined microstrip patch port (S11) and the first connected microstrip chip port (S22) is given in Figure 3 It can be seen that the return losses of the synthesizer port and the branch port are both less than -23dB in the ultra-short wave frequency band of 190MHz to 235MHz, which makes the combiner work stably and reliably in the ultra-short wave frequency band of 190MHz to 235MHz.

[0043] Figure 4 This is a transmission loss curve diagram of a high-power synthesizer applied to ultrashort waves described in this embodiment. Similarly, since the main microstrip patch is a symmetrical structure along the center line, the curves of the first microstrip chip port S21 and the second microstrip chip port S31 are the same. Figure 4 The transmission loss curve from the combined microstrip patch port to the first connected microstrip chip port (S21) is given in Figure 4 It can be seen that the transmission loss of the synthesizer in the ultra-short wave frequency band of 190MHz to 235MHz is less than -0.1dB, which meets the engineering requirements of kilowatt-class synthesizers.

[0044] Figure 5 This is a branch port isolation curve diagram of a high-power synthesizer applied to ultra-short waves described in this embodiment, from Figure 5It can be seen that the isolation value between the two ports of the synthesizer is less than -29dB in the ultra-short wave frequency band of 190MHz to 235MHz, indicating that the mutual interference between the first microstrip chip port and the second microstrip chip port is very small.

[0045] The synthesizer provided by the present invention adopts a structure combining microstrip lines and coaxial cables, which not only increases the relative bandwidth and port isolation, but also effectively reduces the size of the synthesizer. The synthesizer inherits the advantages of Wilkinson combiner, which is simple to make, high in isolation, low in cost, and easy to multi-stage cascade to expand bandwidth, but also solves the disadvantage of Wilkinson combiner with low synthesis power; it has the characteristics of high synthesis power in the coaxial band and achieves the goal of miniaturization.

[0046] The present invention adopts a novel architecture combining a microstrip line and a coaxial cable. The design of this architecture leads one end of the isolation resistor to the ground, which is more conducive to the heat dissipation of the isolation resistor compared to an architecture in which the isolation resistor is embedded, so that the synthesized power is larger. The two-stage coaxial cable is designed in the architecture to increase the relative bandwidth and improve the port isolation. The use of coaxial cables instead of microstrip lines can reduce the size of the synthesizer. The architecture ensures that the synthesized power is greater than 1000W continuous wave (the maximum power in the ultra-short wave band can reach 10kW) and can work stably and reliably.

[0047] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A high-power synthesizer for ultrashort waves, characterized in that: The invention comprises a dielectric substrate (24), a main microstrip patch arranged on the upper surface of the dielectric substrate (24), and a ground plane (25) arranged on the lower surface of the dielectric substrate (24); the main microstrip patch is a U-shaped structure, and a combining microstrip patch (1) is arranged on the middle part of the main microstrip patch on a side different from the opening thereof; a first edge microstrip patch (8) is arranged at one end of the main microstrip patch, and a second edge microstrip patch (9) is arranged at the other end; the first edge microstrip patch (8) and the second edge microstrip patch (9) are arranged correspondingly, and the first edge microstrip patch (8) and the second edge microstrip patch (9) are connected via a connecting component; The connection assembly comprises a first connection microstrip patch (10), an inner conductor of a first coaxial cable (16), a first transition microstrip patch (12), an inner conductor of a second coaxial cable (20), a second transition microstrip patch (13), an inner conductor of a third coaxial cable (17), and a second connection microstrip patch (11) which are connected in sequence; one end of the first connection microstrip patch (10) is connected to the first edge microstrip patch (8), and the other end is connected to the inner conductor of the first coaxial cable (16); one end of the second connection microstrip patch (11) is connected to the second edge microstrip patch (9), and the other end is connected to the inner conductor of the third coaxial cable (17); The connection assembly also includes a fourth coaxial cable (18) inner conductor, a third transition microstrip patch (14), a fifth coaxial cable (21) inner conductor, a fourth transition microstrip patch (15), and a sixth coaxial cable (19) inner conductor connected in sequence; one end of the fourth coaxial cable (18) inner conductor is connected to the first transition microstrip patch (12), and the other end is connected to the third transition microstrip patch (14); the third transition microstrip patch (14) is connected to a ground plane (25) via a first load resistor (22); one end of the sixth coaxial cable (19) inner conductor is connected to the second transition microstrip patch (13), and the other end is connected to the fourth transition microstrip patch (15); the fourth transition microstrip patch (15) is connected to a ground plane (25) via a second load resistor (23); The outer conductors of the first coaxial cable (16), the second coaxial cable (20), the third coaxial cable (17), the fourth coaxial cable (18), the fifth coaxial cable (21) and the sixth coaxial cable (19) are all connected to the ground plane (25).

2. A high-power synthesizer for ultrashort waves according to claim 1, characterized in that: One end of each of the first edge microstrip patch (8) and the second edge microstrip patch (9) is connected to the main microstrip patch, and the other end is arranged 0.2 mm away from the edge of the dielectric substrate (24).

3. A high-power synthesizer for ultrashort waves according to claim 1, characterized in that: One end of the combining microstrip patch (1) is connected to the main microstrip patch, and the other end is arranged 0.2 mm away from the edge of the dielectric substrate (24).

4. A high-power synthesizer for ultrashort waves according to claim 1, characterized in that: The main microstrip patch comprises a first sub-patch (6), a first fan-shaped patch (4), a second sub-patch (2), a third sub-patch (3), a second fan-shaped patch (5) and a fourth sub-patch (7) which are connected in sequence; one end of the first sub-patch (6) is connected to the first fan-shaped patch (4), and the other end is connected to the first edge microstrip patch (8); the combining microstrip patch (1) is arranged corresponding to the connection between the second sub-patch (2) and the third sub-patch (3); one end of the fourth sub-patch (7) is connected to the second fan-shaped patch (5), and the other end is connected to the second edge microstrip patch (9).

5. A high-power synthesizer for ultrashort waves according to claim 4, characterized in that: The angles of the first sector-shaped patch (4) and the second sector-shaped patch (5) are both 90 degrees.

6. A high-power synthesizer for ultrashort waves according to claim 1, characterized in that: The connecting component is arranged corresponding to the groove of the main microstrip patch.

7. A high-power synthesizer for ultrashort waves according to claim 1, characterized in that: The dielectric substrate (24) is made of polytetrafluoroethylene and has a dielectric constant of 2.

55.

8. A high-power synthesizer for ultrashort waves according to claim 1, characterized in that: The four sides of the ground plane (25) are all 0.2 mm away from the edge of the dielectric substrate (24).

9. A high-power synthesizer for ultrashort waves according to claim 1, characterized in that: The characteristic impedances of the first coaxial cable (16), the third coaxial cable (17), the fourth coaxial cable (18) and the sixth coaxial cable (19) are all 50Ω; the characteristic impedances of the second coaxial cable (20) and the fifth coaxial cable (21) are all 25Ω.

10. A high-power synthesizer for ultrashort waves according to claim 1, characterized in that: The resistance values ​​of the first load resistor (22) and the second load resistor (23) are both 50Ω, and the rated powers are both 300W.

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