Method for monitoring gas concentration in semiconductor equipment

Abstract

The present disclosure provides a method for monitoring gas concentration in a semiconductor device, which relates to the field of semiconductor technology. The method for monitoring gas concentration in a semiconductor device includes: providing a reaction chamber, the reaction chamber at least including a first area and a second area, the first area and the second area being in different positions; arranging a plurality of wafers in the reaction chamber, wherein the wafer located in the first area is defined as a first wafer, and the wafer located in the second area is defined as a second wafer; introducing gas into the reaction chamber so that the gas reacts with the first wafer and the second wafer respectively; measuring the resistance of the first wafer and the second wafer respectively, and defining them as a first resistance and a second resistance respectively; comparing the first resistance and the second resistance to obtain the gas concentration of the first area relative to the second area. The method for monitoring gas concentration in a semiconductor device provided by the present disclosure can obtain the concentration distribution of gas in the reaction chamber of the semiconductor device.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a method for monitoring gas concentration in semiconductor equipment. Background Art

[0002] In the process of preparing semiconductor devices, a certain thin film of the semiconductor device (such as Si 3 N 4 The reactor is a commonly used semiconductor device. The reactor has a reaction chamber. When a film is grown, a reaction gas is introduced into the reaction chamber, and a film is grown on the wafer to be processed using the reaction gas.

[0003] However, due to the complex environment of the reaction chamber in the reactor, the distribution of the reaction gas from top to bottom is not uniform after entering the reaction chamber. The uneven distribution of the reaction gas concentration will affect the degree of reaction sufficiency on the one hand, and on the other hand, it may react with the reaction materials on the wafer to varying degrees, thereby reducing the yield of the wafer product. Therefore, it is necessary to analyze the concentration of the reaction gas in the reaction chamber.

[0004] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field. Summary of the invention

[0005] The purpose of the present disclosure is to provide a method for monitoring gas concentration in a semiconductor device, which can obtain the concentration distribution of the gas in the reaction chamber of the semiconductor device.

[0006] According to one aspect of the present disclosure, a method for monitoring gas concentration in a semiconductor device is provided, and the method for monitoring gas concentration in a semiconductor device includes:

[0007] Providing a reaction chamber, the reaction chamber comprising at least a first area and a second area, the first area and the second area being located at different positions;

[0008] Placing a plurality of wafers in the reaction chamber, wherein the wafer located in the first area is defined as a first wafer, and the wafer located in the second area is defined as a second wafer;

[0009] Introducing gas into the reaction chamber so that the gas reacts with the first wafer and the second wafer respectively;

[0010] measuring the resistance of the first wafer and the second wafer respectively, and defining them as a first resistance and a second resistance respectively;

[0011] The first resistance and the second resistance are compared to obtain the gas concentration in the first region relative to the gas concentration in the second region.

[0012] In an exemplary embodiment of the present disclosure, if the second resistance is greater than the first resistance, the gas concentration in the second region is greater than the gas concentration in the first region.

[0013] In an exemplary embodiment of the present disclosure, if the gas concentration of the second region is greater than the gas concentration of the first region, the position of the second region in the reaction chamber is higher than the position of the first region in the reaction chamber.

[0014] In an exemplary embodiment of the present disclosure, the reaction chamber comprises a vertical chamber.

[0015] In an exemplary embodiment of the present disclosure, the gas is introduced into the reaction chamber through the bottom of the reaction chamber.

[0016] In an exemplary embodiment of the present disclosure, the wafer includes:

[0017] substrate;

[0018] a buffer layer, located on the substrate;

[0019] The metal layer is located on the buffer layer.

[0020] In an exemplary embodiment of the present disclosure, the gas reacts with the metal layer.

[0021] In an exemplary embodiment of the present disclosure, the gas includes ammonia.

[0022] In an exemplary embodiment of the present disclosure, the metal layer includes tungsten.

[0023] In an exemplary embodiment of the present disclosure, the resistance of the first wafer and the second wafer after reacting with the gas is measured respectively by a probe method.

[0024] In an exemplary embodiment of the present disclosure, before placing the first wafer and the second wafer in the reaction chamber, initial resistances of the first wafer and the second wafer are measured respectively.

[0025] In an exemplary embodiment of the present disclosure, an initial resistance of the first wafer is equal to an initial resistance of the second wafer.

[0026] The present disclosure provides a method for monitoring gas concentration in a semiconductor device. Wafers are respectively arranged in regions at different positions in a reaction chamber, and each wafer includes a metal layer. After gas is introduced into the reaction chamber, the metal layer of each wafer can react with the introduced gas, and the surface of the metal layer in contact with the gas reacts with the gas to form a metal compound, so that the resistance of the metal layer increases after the gas is introduced. The resistance change of the metal layer of the wafer in different regions before and after the reaction with the gas is determined by measuring, and the degree of reaction with the gas is determined by the resistance change of the metal layer of the wafer in each region before and after the reaction with the gas. The greater the resistance change, the stronger the degree of reaction with the gas. Since the metal layers of the wafers are the same, the gas concentration relationship between the regions is determined according to the reaction degree of each wafer with the gas, and then the gas concentration distribution in each region in the reaction chamber is analyzed according to the determined relative distribution relationship of the gas concentration in each region in the reaction chamber and the height of each region in the reaction chamber.

[0027] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification are used to explain the principles of the present disclosure. Obviously, the accompanying drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0029] Figure 1 A schematic diagram of arranging a wafer in a reaction chamber according to an embodiment of the present disclosure;

[0030] Figure 2 A schematic diagram of arranging a wafer in a reaction chamber provided in another embodiment of the present disclosure;

[0031] Figure 3 A flow chart of a method for monitoring gas concentration in a semiconductor device provided by an embodiment of the present disclosure;

[0032] Figure 4 A schematic diagram of a wafer provided for one embodiment of the present disclosure;

[0033] Figure 5 A schematic diagram of a metal layer of a wafer after nitridation provided in an embodiment of the present disclosure;

[0034] Figure 6 A schematic diagram of a wafer being arranged at the bottom of a reaction chamber provided in accordance with an embodiment of the present disclosure;

[0035] Figure 7 A schematic diagram of arranging a wafer in the middle of a reaction chamber according to an embodiment of the present disclosure;

[0036] Figure 8 A schematic diagram of a wafer being arranged on the top of a reaction chamber provided in an embodiment of the present disclosure;

[0037] Fig. 9 A schematic diagram of gas concentration distribution in a reaction chamber provided for an embodiment of the present disclosure;

[0038] Fig.10 A schematic diagram of the resistance change of a metal layer of a wafer before and after the carrier gas is introduced, provided in one embodiment of the present disclosure;

[0039] Fig.11 A thickness distribution diagram of a silicon nitride layer before a carrier gas is introduced provided for an embodiment of the present disclosure;

[0040] Fig.12 A thickness distribution diagram of a silicon nitride layer after a carrier gas is introduced is provided for an embodiment of the present disclosure. DETAILED DESCRIPTION

[0041] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present invention will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their detailed description will be omitted.

[0042] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of the illustration to another component, these terms are used in this specification only for convenience, such as according to the orientation of the examples described in the drawings. It is understood that if the device of the illustration is turned upside down, the component described as "upper" will become the component "lower". When a structure is "on" other structures, it may mean that the structure is formed integrally on the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure through another structure.

[0043] The terms "a", "an", "the", and "said" are used to indicate the presence of one or more elements / components / etc.; the terms "comprising" and "having" are used to express an open-ended inclusive meaning and mean that additional elements / components / etc. may be present in addition to the listed elements / components / etc.

[0044] like Figure 1As shown, an embodiment of the present disclosure provides a semiconductor device, which is, for example, a reactor 40, which includes, for example, a vertical reaction chamber, and the reaction chamber includes a plurality of regions at different heights in the vertical direction. A gas inlet 430 is provided at the bottom of the reactor 40, through which gas is introduced into the reaction chamber, and the introduced gas can diffuse into a plurality of regions at different heights in the reaction chamber. Due to the complex environment of the reaction chamber, after the gas is introduced into the reaction chamber, the distribution between the bottom and the top of the reaction chamber is not uniform, resulting in differences in the concentration of the gas in the regions at different heights.

[0045] like Figure 1 As shown, in one embodiment of the present disclosure, the reaction chamber includes, for example, a first region 421 and a second region 422, and the first region 421 and the second region 422 are located at different heights. The second region 422 is, for example, located above the first region 421. Of course, the first region 421 may also be located above the second region 422.

[0046] like Figure 2 As shown, in another embodiment of the present disclosure, the reaction chamber includes, for example, a first region 421, a second region 422, a third region 423, a fourth region 424, and a fifth region 425, and the first region 421, the second region 422, the third region 423, the fourth region 424, and the fifth region 425 are sequentially located at different heights. The first region 421, the second region 422, the third region 423, the fourth region 424, and the fifth region 425 can be distributed sequentially from the bottom to the top of the reaction chamber, for example. Of course, the first region 421, the second region 422, the third region 423, the fourth region 424, and the fifth region 425 can also be distributed sequentially from the top to the bottom of the reaction chamber.

[0047] In another embodiment of the present disclosure, the reaction chamber may include three, four, six or more regions at different heights, which is not limited by the present disclosure.

[0048] like Figure 3 As shown, an embodiment of the present disclosure provides a method for monitoring gas concentration in a semiconductor device, comprising:

[0049] Step S100, providing a reaction chamber, the reaction chamber at least comprising a first area and a second area, the first area and the second area being located at different positions;

[0050] Step S200, placing a plurality of wafers in a reaction chamber, wherein a wafer located in a first area is defined as a first wafer, and a wafer located in a second area is defined as a second wafer;

[0051] Step S300, introducing gas into the reaction chamber so that the gas reacts with the first wafer and the second wafer respectively;

[0052] Step S400, measuring the resistance of the first wafer and the second wafer respectively, and defining them as the first resistance and the second resistance respectively;

[0053] Step S500: Compare the first resistance and the second resistance to obtain the gas concentration in the first region relative to the gas concentration in the second region.

[0054] The present disclosure provides a method for monitoring gas concentration in a semiconductor device. Wafers are respectively arranged in regions at different positions in a reaction chamber, and each wafer includes a metal layer. After gas is introduced into the reaction chamber, the metal layer of each wafer can react with the introduced gas, and the surface of the metal layer in contact with the gas reacts with the gas to form a metal compound layer, so that the resistance of the metal layer increases after the gas is introduced. The resistance change of the metal layer of the wafer in different regions before and after the reaction with the gas is determined by measuring, and the degree of reaction with the gas is determined by the resistance change of the metal layer of the wafer in each region before and after the reaction with the gas. The greater the resistance change, the stronger the degree of reaction with the gas. Since the metal layers of the wafers are the same, the gas concentration relationship between the regions is determined according to the reaction degree of each wafer with the gas, and then the gas concentration distribution in each region in the reaction chamber is analyzed according to the determined relative distribution relationship of the gas concentration in each region in the reaction chamber and the height of each region in the reaction chamber.

[0055] like Figure 4 As shown, in one embodiment of the present disclosure, the wafer includes: a substrate 10, a buffer layer 20 and a metal layer 30, wherein the buffer layer 20 is located on the substrate 10, and the metal layer 30 is located on the buffer layer 20. The metal layer 30 can react with the introduced gas; Figure 5 As shown, when the gas introduced is, for example, ammonia (NH 3 ), when the material of the metal layer 30 includes tungsten (W), ammonia reacts with tungsten to form a tungsten nitride layer 31, and the reaction formula is: W+N.→WN; the resistance of tungsten nitride is greater than the resistance of tungsten, that is, the resistance of the part of the metal layer 30 that reacts with the gas is greater than the resistance of the part that does not react with the gas (the resistance of the wafer before it is set in the reaction chamber), thereby increasing the resistance of the metal layer 30.

[0056] The material of the substrate 10 may include at least one of the following materials: silicon (Si), germanium (Ge), silicon germanium (SiGe), carbon silicon (SiC), carbon germanium silicon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP) or other III / V compound semiconductors, including multilayer structures composed of these semiconductors, or silicon on insulator (SOI), stacked silicon on insulator (SSOI), stacked silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), or double-sided polished silicon wafers (Double Side Polished Wafers, DSP), or ceramic substrates such as aluminum oxide, quartz or glass substrates, etc. The material of the buffer layer 20 may be an oxide, such as silicon oxide, silicon oxynitride, and the material of the buffer layer 20 may also be silicon nitride, and the stress between the metal layer 30 and the surface of the substrate 10 may be reduced by providing the buffer layer 20. The material of the metal layer 30 may include, for example, tungsten (W), titanium (Ti), platinum (Pt), ruthenium (Ru), gold (Au), silver (Ag), molybdenum (Mo), aluminum (Al), copper (Cu), neodymium (Nd), chromium (Cr), tantalum (Ta) or alloys thereof.

[0057] In one embodiment of the present invention, Figure 1 As shown, the reaction chamber includes a first area 421 and a second area 422. A first wafer 411 is arranged on the first area 421, and a second wafer 412 is arranged on the second area 422. The second area 422 is located above the first area 421, that is, the second wafer 412 is located above the first wafer 411. For example, Figure 1 As shown, a first wafer 411 and a second wafer 412 are placed in a first area 421 and a second area 422 for monitoring. For example, wafers may be arranged successively in the first area 421 and the second area 422. For example, the first wafer 411 may be arranged in the first area 421 first, and after the monitoring of the first wafer 411 is completed, the first wafer 411 after reacting with the gas is taken out, and then the second wafer 412 is arranged in the second area 422 for monitoring, so as to realize gas concentration monitoring of the first area 421 and the second area 422; or, the second wafer 412 may be arranged in the second area 422 first, and after the monitoring of the second wafer 412 located in the second area 422 is completed, the second wafer 412 after reacting with the gas is taken out, and then the first wafer 411 is arranged in the first area 421 for monitoring, so as to realize gas concentration monitoring of the first area 421 and the second area 422; wherein the gas composition, concentration, flow rate and time introduced each time are the same, so as to ensure that the gas concentration in the first area 421 and the second area 422 remains unchanged or changes slightly during the two test processes.

[0058] Wherein, before the first wafer 411 is placed in the first area 421 and before the second wafer 412 is placed in the second area 422, the initial resistance of the metal layer of the first wafer 411 and the second wafer 412 is measured. After the first wafer 411 is placed in the first area 421 to complete the reaction with the gas, and after the second wafer 412 is placed in the second area 422 to complete the reaction with the gas, the resistance of the metal layer of the first wafer 411 and the second wafer 412 is measured again to obtain the first resistance of the first wafer 411, obtain the first resistance of the second wafer 412, and then obtain the resistance change before and after the first wafer 411 reacts with the gas, and the resistance change before and after the second wafer 412 reacts with the gas. For example, the initial resistance of the metal layer of the first wafer 411 and the second wafer 412 can also be made the same, so that there is no need to measure the initial resistance of the metal layer before the first wafer 411 and the second wafer 412 are placed in the reaction chamber, and the relative relationship of the resistance change can be directly determined based on the first resistance and the second resistance obtained.

[0059] After measurement, the resistance change before and after the metal layer of the second wafer 412 reacts with the gas is greater than the resistance change before and after the metal layer of the first wafer 411 reacts with the gas, that is, the reaction degree of the metal layer of the second wafer 412 with the gas is stronger than that of the metal layer of the first wafer 411 with the gas. Since the metal layers of the first wafer 411 and the second wafer 412 are the same, it is determined that the gas concentration of the second region 422 is greater than the gas concentration of the first region 421. According to the fact that the second region 422 is located above the first region 421 and the gas concentration of the second region 422 is greater than the gas concentration of the first region 421, it is determined that the gas concentration of the higher region in the reaction chamber is also relatively high, that is, in the reaction chamber, the height of each region in the reaction chamber is proportional to the gas concentration, thereby realizing the analysis of the gas concentration distribution in each region in the reaction chamber.

[0060] In another embodiment of the present invention, Figure 2 As shown, the reaction chamber includes a first region 421, a second region 422, a third region 423, a fourth region 424 and a fifth region 425. In the height direction from bottom to top of the reaction chamber, the first region 421, the second region 422, the third region 423, the fourth region 424 and the fifth region 425 are arranged in sequence. For example, Figure 2As shown, a first wafer 411 is arranged on the first area 421, a second wafer 412 is arranged on the second area 422, a third wafer 413 is arranged on the third area 423, a fourth wafer 414 is arranged on the fourth area 424, and a fifth wafer 415 is arranged on the fifth area 425. For example, wafers may be arranged in the first area 421, the second area 422, the third area 423, the fourth area 424, and the fifth area 425 in sequence; for example, wafers may be arranged in the first area 421 at the bottom, the third area 423 at the middle, and the fifth area 425 at the top in sequence, as shown in FIG. Figure 6-Figure 8 As shown, a first wafer 411 is firstly set in a first area 421, and after the monitoring of the first wafer 411 is completed, the first wafer 411 after reacting with the gas is taken out, and then a second wafer 412 is set in a third area 423, and after the monitoring of the second wafer 412 is completed, the second wafer 412 after reacting with the gas is taken out, and then a third wafer 413 is set in a fifth area 425 for monitoring; wherein, the gas composition, concentration, flow rate and time introduced each time are the same to ensure that the gas concentration in each area remains unchanged or changes slightly during different tests.

[0061] Among them, before placing the wafer in each area, the initial resistance of the metal layer of each wafer is measured. After the wafers in each area react with the gas, the resistance of the metal layer of each wafer is measured again to obtain the resistance of the metal layer of each wafer, and then obtain the resistance change of the metal layer of each wafer before and after the reaction with the gas. For example, the initial resistance of the metal layer of each wafer can also be made the same, so that there is no need to measure the initial resistance of the metal layer before each wafer is placed in the reaction chamber, and the relative relationship of the resistance change can be directly determined based on the resistance of the metal layer of each wafer after the reaction with the gas.

[0062] After measurement, the resistance change of the metal layer of the fifth wafer 415 before and after the reaction with the gas is greater than the resistance change of the metal layer of the fourth wafer 414 before and after the reaction with the gas, the resistance change of the metal layer of the fourth wafer 414 before and after the reaction with the gas is greater than the resistance change of the metal layer of the third wafer 413 before and after the reaction with the gas, the resistance change of the metal layer of the third wafer 413 before and after the reaction with the gas is greater than the resistance change of the metal layer of the second wafer 412 before and after the reaction with the gas, and the resistance change of the metal layer of the second wafer 412 before and after the reaction with the gas is greater than the resistance change of the metal layer of the first wafer 411 before and after the reaction with the gas. In other words, the reaction degree of the metal layer of the wafer near the top of the reaction chamber with the gas is stronger than the reaction degree of the metal layer of the wafer located below it; Fig. 9As shown, since the metal layers of each wafer are the same, it is determined that the gas concentration of the fifth region 425 is greater than the gas concentration of the fourth region 424, the gas concentration of the fourth region 424 is greater than the gas concentration of the third region 423, the gas concentration of the third region 423 is greater than the gas concentration of the second region 422, and the gas concentration of the second region 422 is greater than the gas concentration of the first region 421. According to the determined positional relationship among the first region 421, the second region 422, the third region 423, the fourth region 424, and the fifth region 425 and the gas concentration relationship of each region, it is further determined that the gas concentration of the region with a higher position in the reaction chamber is also relatively high, that is, the height of each region in the reaction chamber is proportional to the gas concentration, thereby realizing the analysis of the gas concentration distribution in each region in the reaction chamber.

[0063] In one embodiment of the present disclosure, the initial resistance of each wafer metal layer and the resistance of each wafer metal layer after reacting with gas are measured respectively by a probe method.

[0064] It should be noted that the embodiments of the present disclosure discuss in detail the specific method for monitoring the gas concentration when the reaction chamber includes two areas or five areas. When the reaction chamber includes three, four, six or more areas at different heights, the specific method for monitoring the gas concentration in the reaction chamber is similar to the specific monitoring method when the reaction chamber includes two areas or five areas, and the present disclosure will not repeat them here.

[0065] In one embodiment of the present disclosure, when a reaction gas (such as ammonia) is introduced into the reaction chamber, the reaction gas may be introduced into the reaction chamber via a carrier gas. Fig.10 In the figure, the ordinate represents the resistance, the abscissa represents the three different regions of the wafer at the bottom, middle and top of the reaction chamber, the line segment A represents the resistance change of the metal layer of the wafer in the three regions of the bottom, middle and top of the reaction chamber when the carrier gas is not used to pass the gas, and the line segment B represents the resistance change of the metal layer of the wafer in the three regions of the bottom, middle and top of the reaction chamber after the carrier gas is passed. It can be seen that when the carrier gas is not used to pass the gas, the resistance change difference of the metal layer of the wafer in the three regions of the bottom, middle and top of the reaction chamber is large; while when the carrier gas is used to pass the gas, the resistance change difference of the metal layer of the wafer in the three regions of the bottom, middle and top of the reaction chamber is relatively small, that is, the use of carrier gas to pass the gas can make the gas more evenly distributed in the reaction chamber, so that the concentration difference of the gas in different regions is reduced.

[0066] like Fig.11As shown, before the carrier gas is introduced, the average thickness (Mean) of the silicon nitride layer on the wafer 51 is 53.4nm; the positive and negative three standard deviations (3-sigma) are 1.8nm, accounting for 3.4% of the average thickness; the range (Range) is 1.8nm, accounting for 3.3% of the average thickness. Fig.12 As shown, after the carrier gas is introduced, the average thickness (Mean) of the silicon nitride layer on the wafer 52 is 53.3nm; the positive and negative three standard deviations (3-sigma) are 1.3nm, accounting for 2.4% of the average thickness; the range (Range) is 1.4nm, accounting for 2.6% of the average thickness, and both the standard deviation and the range are reduced. It can be seen that in the same area, after the carrier gas is introduced, the thickness of each part of the silicon nitride layer is more uniform than when the carrier gas is not used, that is, after the carrier gas is introduced, the gas is more evenly distributed in the area.

[0067] For example, the carrier gas may be an inert gas, such as nitrogen. When a silicon nitride (Si 3 N 4 ) when nitrogen (NH 3 ) and dichlorosilane (SiH 2 Cl 2 ), the reaction formula is: 3SiH 2 Cl 2 +10NH 3 →Si 3 N 4 +6NH 4 Cl 2 +6H 2 It can be seen that when silicon nitride is generated through reaction, nitrogen will not participate in the reaction and avoid entering the reaction chamber to participate in the reaction. 3 N 4 ) has the advantages of strong impurity masking ability, dense structure and good hydrophobicity, and can be used as sidewall spacer, shallow trench chemical mechanical polishing stop layer (CMP stoplayer), or hard mask layer (hardmask) in semiconductor devices.

[0068] It should be noted that, although the steps of the method in the present disclosure are described in a specific order in the drawings, this does not require or imply that the steps must be performed in this specific order, or that all the steps shown must be performed to achieve the desired results. Additionally or alternatively, some steps may be omitted, multiple steps may be combined into one step, and / or one step may be decomposed into multiple steps, etc.

[0069] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any modification, use or adaptation of the present disclosure, which follows the general principles of the present disclosure and includes common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present disclosure are indicated by the appended claims.

[0070] It should be understood that the present invention is not limited to the exact construction that has been described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

Claims

1. A method for monitoring gas concentration in semiconductor equipment, It is characterized in that include: Providing a reaction chamber, the reaction chamber comprising at least a first area and a second area, the first area and the second area being located at different positions; Placing a plurality of wafers in the reaction chamber, wherein the wafer located in the first area is defined as a first wafer, and the wafer located in the second area is defined as a second wafer; Introducing gas into the reaction chamber so that the gas reacts with the first wafer and the second wafer respectively; measuring the resistance of the first wafer and the second wafer respectively, and defining them as a first resistance and a second resistance respectively; comparing the first resistance and the second resistance to obtain a gas concentration in the first region relative to a gas concentration in the second region; Wherein, if the second resistance is greater than the first resistance, the gas concentration in the second region is greater than the gas concentration in the first region; If the gas concentration in the second region is greater than the gas concentration in the first region, the position of the second region in the reaction chamber is higher than the position of the first region in the reaction chamber.

2. The method for monitoring gas concentration in semiconductor equipment according to claim 1, It is characterized in that The reaction chamber comprises a vertical chamber.

3. The method for monitoring gas concentration in a semiconductor device according to claim 1, It is characterized in that The gas is introduced into the reaction chamber through the bottom of the reaction chamber.

4. The method for monitoring gas concentration in a semiconductor device according to claim 1, It is characterized in that The wafer comprises: substrate; a buffer layer, located on the substrate; The metal layer is located on the buffer layer.

5. The method for monitoring gas concentration in semiconductor equipment according to claim 4, It is characterized in that The gas reacts with the metal layer.

6. The method for monitoring gas concentration in semiconductor equipment according to claim 4, It is characterized in that The gas includes ammonia.

7. The method for monitoring gas concentration in semiconductor equipment according to claim 4, It is characterized in that The metal layer includes tungsten.

8. The method for monitoring gas concentration in semiconductor equipment according to claim 1, It is characterized in that The resistance of the first wafer and the second wafer after reacting with the gas is measured respectively by a probe method.

9. The method for monitoring gas concentration in semiconductor equipment according to claim 1, It is characterized in that Before placing the first wafer and the second wafer in the reaction chamber, initial resistances of the first wafer and the second wafer are measured respectively.

10. The method for monitoring gas concentration in semiconductor equipment according to claim 9, It is characterized in that The initial resistance of the first wafer is equal to the initial resistance of the second wafer.

Images