A transfer structure for a micro-component and a display panel

Abstract

An embodiment of the present invention discloses a transfer structure for micro-components and a display panel. The transfer structure for micro-components includes: a substrate, wherein the substrate includes at least one placement area for placing micro-components to be transferred; a photosensitive adhesive layer located on one side of the substrate; the placement area includes a middle area and an edge area surrounding the middle area; the photosensitive adhesive layer covers the middle area and the edge area, and the thickness of at least a part of the photosensitive adhesive layer located in the middle area is less than the thickness of the photosensitive adhesive layer located in the edge area; and / or, the proportion of the photosensitive adhesive layer in the middle area is less than 100%. The technical solution provided by the embodiment of the present invention improves the problem of fragmentation when the micro-components are separated from the substrate during the transfer process.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of semiconductor technology, and in particular, to a transfer structure for micro-components and a display panel. Background Art

[0002] With the development of traditional flat panel display and micro-projection display technologies, the promising mainstream core micro-light emitting diode (micro-LED) display technology has attracted wide attention due to its advantages such as high efficiency, high brightness, high reliability, and fast response time of inorganic LEDs, and its self-luminous property without a backlight source, which also has advantages such as energy saving, small size, long life, and simple structure.

[0003] Micro-components are small in size (such as micro-light emitting diode chips), and a transfer structure capable of transferring micro-components is required to transfer the micro-components to the surface of the driving backplane. The inventor has found through long-term research that during the process of transferring micro-components from the substrate to the surface of the driving backplane using the current transfer structure of micro-components, the micro-components are prone to fragmentation when separated from the substrate. Summary of the Invention

[0004] In view of this, the object of the present invention is to provide a transfer structure for micro-components and a display panel to improve the problem of fragmentation when the micro-components are separated from the substrate during the mass transfer process.

[0005] Embodiments of the present invention provide a transfer structure for micro-components, including:

[0006] A substrate, wherein the substrate includes at least one placement area for placing micro-components to be transferred, and the placement area includes a middle area and an edge area surrounding the middle area;

[0007] A photosensitive adhesive layer located on one side of the substrate;

[0008] Wherein, the photosensitive adhesive layer covers the middle area and the edge area, and the thickness of at least part of the photosensitive adhesive layer located in the middle area is less than the thickness of the photosensitive adhesive layer located in the edge area; and / or, the proportion of the photosensitive adhesive layer in the middle area is less than 100%.

[0009] In this technical solution, by reducing the thickness and / or area of the photosensitive adhesive layer in the middle region, the difference in the performance change of the photosensitive adhesive layer between the middle region and the edge region is reduced. Furthermore, the degree of uneven force on the micro-components to be transferred, such as micro light-emitting diode chips, located in the middle region and the edge region is reduced, solving the problem that the micro-components to be transferred, such as micro light-emitting diode chips, are prone to fragmentation when separating from the substrate. The success rate of transferring the micro-components to be transferred, such as micro light-emitting diode chips, is improved.

[0010] Optionally, the photosensitive adhesive layer is in a gaseous state under laser irradiation.

[0011] This technical solution reduces the thickness and / or area of the photosensitive adhesive layer in the middle region, thereby reducing the volume of the photosensitive adhesive layer in a gaseous state under light irradiation, and reducing the value of the impact force borne by the micro-components to be transferred in the middle region. For the micro-components to be transferred, such as micro light-emitting diode chips, the degree of uneven impact force on the micro-components to be transferred, such as micro light-emitting diode chips, between the middle region and the edge region is reduced, solving the problem that the micro-components to be transferred, such as micro light-emitting diode chips, are prone to fragmentation when separating from the substrate. The success rate of transfer is improved.

[0012] Optionally, in the direction perpendicular to the thickness of the substrate, the cross-sectional area of the photosensitive adhesive layer in the middle region is smaller than the cross-sectional area of the photosensitive adhesive layer in the edge region.

[0013] In this technical solution, the cross-sectional area of the photosensitive adhesive layer in the middle region is smaller than the cross-sectional area of the photosensitive adhesive layer in the edge region, reducing the force-bearing area of the micro-components to be transferred, such as micro light-emitting diode chips, that bear a large impact force. For the micro-components to be transferred, such as micro light-emitting diode chips, the degree of uneven impact force on the micro-components to be transferred, such as micro light-emitting diode chips, between the middle region and the edge region is further reduced, solving the problem that the micro-components to be transferred, such as micro light-emitting diode chips, are prone to fragmentation when separating from the substrate. The success rate of transfer is improved.

[0014] Optionally, the orthographic projection of the photosensitive adhesive layer on the substrate and the orthographic projection of the middle region on the substrate do not overlap.

[0015] In this technical solution, the photosensitive adhesive layer does not cover the middle area, reducing the force-bearing area of the micro-component to be transferred, such as a micro light-emitting diode chip, which bears a large impact force, to zero. For the micro-component to be transferred, such as a micro light-emitting diode chip, the uniformity of the impact force received by the force-bearing area of the micro-component to be transferred, such as a micro light-emitting diode chip, is improved, and the problem that the micro-component to be transferred, such as a micro light-emitting diode chip, is easily broken when the micro-component to be transferred, such as a micro light-emitting diode chip, is separated from the substrate is solved, further improving the success rate of the transfer.

[0016] Optionally, the thickness of the photosensitive adhesive layer in the middle area is less than the thickness of the photosensitive adhesive layer in the edge area.

[0017] In this technical solution, when the photosensitive adhesive layer is located in the middle area and the edge area, the thickness of the photosensitive adhesive layer in the middle area is less than the thickness of the photosensitive adhesive layer in the edge area, reducing the amount of the photosensitive adhesive layer in the middle area. Furthermore, the volume of the photosensitive adhesive layer in the gaseous state under light irradiation is reduced, and the value of the impact force borne by the micro-component to be transferred, such as a micro light-emitting diode chip, in the middle area is reduced. For the micro-component to be transferred, such as a micro light-emitting diode chip, the non-uniformity of the impact force received by the micro-component to be transferred, such as a micro light-emitting diode chip, in the middle area and the edge area is reduced, and the problem that the micro-component to be transferred, such as a micro light-emitting diode chip, is easily broken when the micro-component to be transferred, such as a micro light-emitting diode chip, is separated from the substrate is solved, improving the success rate of the transfer.

[0018] Optionally, the photosensitive adhesive layer in the middle area is connected to the photosensitive adhesive layer in the edge area.

[0019] In this technical solution, connecting the photosensitive adhesive layer in the middle area to the photosensitive adhesive layer in the edge area, compared with the technical solution in which the photosensitive adhesive layer in the middle area and the photosensitive adhesive layer in the edge area are independently arranged, makes the photosensitive adhesive layer in the middle area as close as possible to the edge area. Furthermore, the value of the impact force borne by the micro-component to be transferred in the middle area is reduced. For the micro-component to be transferred, such as a micro light-emitting diode chip, the non-uniformity of the impact force received by the micro-component to be transferred, such as a micro light-emitting diode chip, in the middle area and the edge area is reduced, and the problem that the micro-component to be transferred, such as a micro light-emitting diode chip, is easily broken when the micro-component to be transferred, such as a micro light-emitting diode chip, is separated from the substrate is solved, improving the success rate of the transfer.

[0020] Optionally, the orthographic projection pattern of the photosensitive adhesive layer corresponding to each micro-component to be transferred on the substrate is a centrosymmetric pattern about the center of the micro-component to be transferred.

[0021] In this technical solution, the orthographic projection pattern of the photosensitive adhesive layer corresponding to each micro-component to be transferred on the substrate is a centrosymmetric pattern about the center of the micro-component to be transferred. In the thickness direction perpendicular to the substrate, when the photosensitive adhesive layer becomes gaseous under light irradiation, the impact force of the photosensitive adhesive layer on the micro-component to be transferred, such as a micro light-emitting diode chip, is centrosymmetrically distributed about the center of the micro-component to be transferred, such as a micro light-emitting diode chip. For the micro-component to be transferred, such as a micro light-emitting diode chip, the symmetry degree of the impact force received by different regions is improved, the problem that the micro-component to be transferred, such as a micro light-emitting diode chip, is easily broken when separated from the substrate is solved, and the transfer success rate is improved.

[0022] Optionally, the photosensitive adhesive layer corresponding to each of the placement regions includes at least one photosensitive adhesive region.

[0023] In this technical solution, as the number of photosensitive adhesive regions increases, when the photosensitive adhesive layer becomes gaseous under light irradiation, it will generate an impact force on the micro-component to be transferred, such as a micro light-emitting diode chip, and push it to the target substrate. On this basis, the amount of the photosensitive adhesive layer used can be reduced by reasonably setting the number of photosensitive adhesive regions, thereby achieving the technical effect of reducing the cost of the transfer structure of the micro-component to be transferred, such as a micro light-emitting diode chip.

[0024] Preferably, in the direction perpendicular to the thickness of the substrate, the cross-sectional pattern of the photosensitive adhesive region includes at least one of a circle, an ellipse, a ring, and a polygon.

[0025] This technical solution enriches the types of cross-sectional patterns of the photosensitive adhesive region. The cross-sectional pattern of the photosensitive adhesive region with a smaller usage amount can be specifically selected according to the spot shape and the shape of the micro-component to be transferred, such as a micro light-emitting diode chip, thereby achieving the technical effect of reducing the cost of the transfer structure of the micro-component to be transferred, such as a micro light-emitting diode chip.

[0026] Optionally, it further includes an adhesive layer, and the adhesive layer is located on the surface of the micro-component to be transferred adjacent to the photosensitive adhesive layer.

[0027] In this technical solution, when the photosensitive adhesive layer is in a gaseous state under light irradiation, it generates an impact force on the adhesive layer, causing the adhesive layer to bulge toward the side of the micro-component to be transferred, such as a micro light-emitting diode chip, reducing the contact area between the adhesive layer and the micro-component to be transferred, such as a micro light-emitting diode chip, and thus separating the micro-component to be transferred, such as a micro light-emitting diode chip, from the substrate and transferring it to the target substrate. Moreover, the adhesive layer further reduces the impact force on the micro-component to be transferred, such as a micro light-emitting diode chip, when the photosensitive adhesive layer is in a gaseous state under light irradiation, solves the problem that the micro-component to be transferred, such as a micro light-emitting diode chip, is prone to fragmentation when separating from the substrate, and improves the success rate of transfer.

[0028] An embodiment of the present invention further provides a display panel, including a driving backplane and a micro light-emitting diode chip array, where the micro light-emitting diode chip array is located on the surface of the driving backplane;

[0029] The micro light-emitting diode chip is transferred to the surface of the driving backplane through the transfer structure of the micro-component according to any of the above technical solutions.

[0030] In this technical solution, the micro light-emitting diode chip of the display panel is transferred to the surface of the driving backplane through the transfer structure of the micro-component according to any of the above technical solutions. For the micro light-emitting diode chip, it reduces the unevenness of the impact force received by the micro light-emitting diode chips located in the middle region and the edge region, solves the problem that the micro light-emitting diode chip is prone to fragmentation when separating from the substrate, and improves the success rate of the massive transfer of the micro light-emitting diode chip.

[0031] In the technical solution provided by the embodiment of the present invention, when the energy of the light emitted by the light source is Gaussian-distributed, that is, the energy of the light irradiated on the middle region is greater than the energy of the light irradiated on the edge region, when the photosensitive adhesive layer covers the middle region and the edge region, and the thickness of at least a part of the photosensitive adhesive layer located in the middle region is less than the thickness of the photosensitive adhesive layer located in the edge region, the technical solution provided by the embodiment of the present invention reduces the amount of the photosensitive adhesive layer located in the middle region, reduces the difference in the performance change of the photosensitive adhesive layer located in the middle region and the photosensitive adhesive layer located in the edge region, and further reduces the degree of uneven stress on the micro-elements to be transferred, such as micro light-emitting diode chips, located in the middle region and the edge region, solves the problem that the micro-elements to be transferred, such as micro light-emitting diode chips, are prone to fragmentation when separated from the substrate, and improves the success rate of transferring the micro-elements to be transferred, such as micro light-emitting diode chips; and / or, when the proportion of the photosensitive adhesive layer in the middle region is less than 100%, compared with the technical solution in which the photosensitive adhesive layer completely covers the middle region, the technical solution provided by the embodiment of the present invention reduces the area of the photosensitive adhesive layer located in the middle region, reduces the difference in the performance change of the photosensitive adhesive layer located in the middle region and the photosensitive adhesive layer located in the edge region, and further reduces the degree of uneven stress on the micro-elements to be transferred, such as micro light-emitting diode chips, located in the middle region and the edge region, solves the problem that the micro-elements to be transferred, such as micro light-emitting diode chips, are prone to fragmentation when separated from the substrate, and improves the success rate of transferring the micro-elements to be transferred, such as micro light-emitting diode chips. Description of the Drawings

[0032] Figure 1 is a schematic structural diagram of a transfer structure of a micro-element in the prior art;

[0033] Figure 2 is a schematic structural diagram of a transfer structure of a micro-element provided by an embodiment of the present invention;

[0034] Figure 3 is a schematic structural diagram of another transfer structure of a micro-element provided by an embodiment of the present invention;

[0035] Figure 4 is a schematic structural diagram of yet another transfer structure of a micro-element provided by an embodiment of the present invention;

[0036] Figure 5 is a schematic structural diagram of yet another transfer structure of a micro-element provided by an embodiment of the present invention;

[0037] Figure 6 is a top view of a micro-element and a photosensitive adhesive layer provided by an embodiment of the present invention;

[0038] Figure 7Another top view of the micro-component and the photosensitive adhesive layer provided by the embodiment of the present invention;

[0039] Figure 8 Another top view of the micro-component and the photosensitive adhesive layer provided by the embodiment of the present invention;

[0040] Figure 9 Another top view of the micro-component and the photosensitive adhesive layer provided by the embodiment of the present invention;

[0041] Figure 10 Another top view of the micro-component and the photosensitive adhesive layer provided by the embodiment of the present invention;

[0042] Figure 11 Schematic structural diagram of the transfer structure of another micro-component provided by the embodiment of the present invention;

[0043] Figure 12 Schematic structural diagram of a display panel provided by the embodiment of the present invention. Detailed implementation manners

[0044] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the present invention, rather than limiting the present invention. In addition, it should be noted that for the convenience of description, only the parts related to the present invention are shown in the drawings, rather than all the structures.

[0045] As described in the above background art, the inventors have found through long-term research that during the process of transferring the micro-component to the surface of the target substrate by the current transfer structure of the micro-component, when the micro-component is separated from the substrate of the transfer structure, the micro-component is prone to fragmentation. Figure 1 Schematic structural diagram of the transfer structure of the micro-component in the prior art. Refer to Figure 1, the current transfer structure of micro-components includes a substrate 10, the substrate 10 includes at least one placement area 10A, the placement area 10A is used to place the micro-components 30 to be transferred, and the micro-components 30 to be transferred are, for example, micro light-emitting diode chips in the embodiments of the present invention; a photosensitive adhesive layer 20, the photosensitive adhesive layer 20 is located on one side of the substrate 10; the placement area 10A includes a middle area 11 and an edge area 12 surrounding the middle area 11, and the photosensitive adhesive layer 20 completely covers the middle area 11 and the edge area 12. Specifically, under the irradiation of laser, the performance of the photosensitive adhesive layer 20 changes. When the energy of the light emitted by the light source 50 is Gaussian-distributed, that is, the energy of the light irradiating on the middle area 11 and the edge area 12 is uneven, the degree of change in the performance of the photosensitive adhesive layer 20 located in the middle area 11 and the edge area 12 is different, resulting in uneven force on the micro-components 30 to be transferred, for example, micro light-emitting diode chips. When the micro-components 30 to be transferred, for example, micro light-emitting diode chips are separated from the substrate 10 of the transfer structure, the micro-components 30 to be transferred, for example, micro light-emitting diode chips are prone to breakage.

[0046] In view of the above technical problems, the embodiments of the present invention provide the following technical solutions:

[0047] Figure 2 It is a schematic structural diagram of a transfer structure of micro-components provided by an embodiment of the present invention. Figure 3 It is a schematic structural diagram of another transfer structure of micro-components provided by an embodiment of the present invention. Refer to Figure 2 and Figure 3 , the transfer structure of the micro-components includes: a substrate 10, the substrate 10 includes at least one placement area 10A, the placement area 10A is used to place the micro-components 30 to be transferred; a photosensitive adhesive layer 20, the photosensitive adhesive layer 20 is located on one side of the substrate 10; the placement area 10A includes a middle area 11 and an edge area 12 surrounding the middle area 11, refer to Figure 2 , the photosensitive adhesive layer 20 covers the middle area 11 and the edge area 12, and the thickness of at least part of the photosensitive adhesive layer 20 located in the middle area 11 is less than the thickness of the photosensitive adhesive layer 20 located in the edge area 12; and / or, refer to Figure 3 , the proportion of the photosensitive adhesive layer 20 in the middle area 11 is less than 100%.

[0048] It should be noted that, in this embodiment, the micro-components 30 to be transferred are introduced by taking micro light-emitting diode chips as an example. Specifically, the photosensitive adhesive layer 20 in the embodiments of the present invention includes that its performance changes under the irradiation of laser, prompting the micro-components 30 to be transferred, for example, micro light-emitting diode chips to be separated from the substrate 10 of the transfer structure and transferred to the target substrate 40. Exemplarily, Figure 2In the transfer structure of the micro-component shown, the photosensitive adhesive layer 20 covers the middle region 11 and the edge region 12, and the thickness of the photosensitive adhesive layer 20 in the middle region 11 is less than the thickness of the photosensitive adhesive layer 20 in the edge region 12. An embodiment of the present invention also includes a technical solution in which the thickness of the photosensitive adhesive layer 20 in part of the middle region 11 is less than the thickness of the photosensitive adhesive layer 20 in the edge region 12. Figure 3 In the transfer structure of the micro-component shown, the photosensitive adhesive layer 20 covers part of the middle region 11 and the entire edge region 12. An embodiment of the present invention also includes a technical solution in which the photosensitive adhesive layer 20 only covers at least part of the edge region 12.

[0049] When the photosensitive adhesive layer 20 completely covers the middle region 11, the proportion of the photosensitive adhesive layer 20 in the middle region 11 is 100%. The proportion of the photosensitive adhesive layer 20 in the middle region 11 is less than 100%, that is, the photosensitive adhesive layer 20 covers part of the middle region 11, or the photosensitive adhesive layer 20 does not cover the middle region 11 and only covers the edge region 12. It can be understood that when the proportion of the photosensitive adhesive layer 20 in the middle region 11 is less than 100%, the proportion of the photosensitive adhesive layer 20 in the edge region 12 is 100%; or the proportion of the photosensitive adhesive layer 20 in the edge region 12 can also be less than 100%, but it should be greater than the proportion of the photosensitive adhesive layer 20 in the middle region 11, and it can be specifically set according to the actual situation.

[0050] It should be noted that when the energy of the light emitted by the light source 50 is Gaussian-distributed, that is, the energy of the light irradiated on the middle region 11 is greater than the energy of the light irradiated on the edge region 12. For the photosensitive adhesive layer 20 with the same thickness and the same area, the degree of change in the performance of the photosensitive adhesive layer 20 in the middle region 11 and the photosensitive adhesive layer 20 in the edge region 12 is different, resulting in uneven stress on the micro-component 30 to be transferred, such as a micro light-emitting diode chip, in the middle region 11 and the edge region. When the micro-component 30 to be transferred, such as a micro light-emitting diode chip, is separated from the substrate 10 of the transfer structure, the micro-component 30 to be transferred, such as a micro light-emitting diode chip, is likely to be broken.

[0051] Figure 2 and Figure 3 The transfer method for transferring the micro-component 30 to be transferred, such as a micro light-emitting diode chip, in the transfer structure shown is as follows:

[0052] Step 110: The light passes through the substrate and irradiates the photosensitive adhesive layer.

[0053] See Figure 2 and Figure 3 The light passes through the substrate 10 and irradiates the photosensitive adhesive layer 20.

[0054] Step 120: The performance of the photosensitive adhesive layer changes under light irradiation, so that the micro-components to be transferred, such as micro light-emitting diode chips, are transferred to the target substrate.

[0055] See Figure 2 and Figure 3 , the performance of the photosensitive adhesive layer 20 changes under light irradiation, so that the micro-components 30 to be transferred, such as micro light-emitting diode chips, are transferred to the target substrate 40.

[0056] In the technical solution provided by the embodiment of the present invention, when the energy of the light emitted by the light source 50 is Gaussian-distributed, that is, the energy of the light irradiated on the middle region 11 is greater than the energy of the light irradiated on the edge region 12, when the photosensitive adhesive layer 20 covers the middle region 11 and the edge region 12, and at least part of the thickness of the photosensitive adhesive layer 20 located in the middle region 11 is less than the thickness of the photosensitive adhesive layer 20 located in the edge region 12, the technical solution provided by the embodiment of the present invention reduces the amount of the photosensitive adhesive layer 20 located in the middle region 11, reduces the difference in the performance change of the photosensitive adhesive layer 20 located in the middle region 11 and the photosensitive adhesive layer 20 located in the edge region 12, and further reduces the uneven force on the micro-components 30 to be transferred, such as micro light-emitting diode chips, located in the middle region 11 and the edge region 12, solves the problem that the micro-components 30 to be transferred, such as micro light-emitting diode chips, are easily broken when separated from the substrate 10, and improves the transfer success rate of the micro-components 30 to be transferred, such as micro light-emitting diode chips; and / or, when the proportion of the photosensitive adhesive layer 20 in the middle region 11 is less than 100%, compared with the technical solution in which the photosensitive adhesive layer 20 completely covers the middle region 11, the technical solution provided by the embodiment of the present invention reduces the area of the photosensitive adhesive layer 20 located in the middle region 11, reduces the difference in the performance change of the photosensitive adhesive layer 20 located in the middle region 11 and the photosensitive adhesive layer 20 located in the edge region 12, and further reduces the uneven force on the micro-components 30 to be transferred, such as micro light-emitting diode chips, located in the middle region 11 and the edge region 12, solves the problem that the micro-components 30 to be transferred, such as micro light-emitting diode chips, are easily broken when separated from the substrate 10, and improves the transfer success rate of the micro-components 30 to be transferred, such as micro light-emitting diode chips.

[0057] Optionally, the photosensitive adhesive layer 20 becomes gaseous under light irradiation.

[0058] Specifically, the photosensitive adhesive layer 20 in the embodiments of the present invention is composed of an organic material that quickly turns into a gaseous state under laser irradiation. A large amount of gas will generate an impact force on the micro-component 30 to be transferred, such as a micro light-emitting diode chip, thereby causing the micro-component 30 to be transferred, such as a micro light-emitting diode chip, to separate from the substrate 10 of the transfer structure and be transferred to the target substrate 40. Exemplarily, the organic material may be polyimide. Optionally, the light source 50 of the present application may be a laser source.

[0059] Optionally, the photosensitive adhesive layer 20 is a solid laser photosensitive adhesive layer. When the corresponding solid laser photosensitive adhesive layer turns into a gaseous state under the irradiation of a solid laser, it will generate an impact force on the micro-component 30 to be transferred, such as a micro light-emitting diode chip, and push the micro-component 30 to be transferred, such as a micro light-emitting diode chip, to the target substrate 40. Among them, the solid laser is Gaussian light, and the collimation of the solid laser is better than that of other light sources, which can shorten the time for the solid laser photosensitive adhesive layer to change from a solid state to a gaseous state, reduce the power consumption of the light source, and thus reduce the cost of the transfer structure of the micro-component 30 to be transferred, such as a micro light-emitting diode chip.

[0060] It should be noted that when the energy of the light emitted by the light source 50 is Gaussian-distributed, that is, the energy of the light irradiated on the middle region 11 is greater than the energy of the light irradiated on the edge region 12, for the photosensitive adhesive layer 20 with the same thickness and the same area, the impact force received by the micro-component 30 to be transferred, such as a micro light-emitting diode chip, located in the middle region 11 is greater than the impact force received by the same micro-component 30 to be transferred, such as a micro light-emitting diode chip, located in the edge region 12.

[0061] Specifically, when the photosensitive adhesive layer 20 covers the middle region 11 and the edge region 12, and the thickness of the photosensitive adhesive layer 20 at least partially located in the middle region 11 is less than the thickness of the photosensitive adhesive layer 20 located in the edge region 12, the technical solution provided by the embodiment of the present invention reduces the amount of the photosensitive adhesive layer 20 in the middle region 11, thereby reducing the volume of the photosensitive adhesive layer 20 in the gaseous state under light irradiation, and reducing the value of the impact force borne by the micro-component 30 to be transferred in the middle region 11. For the micro-component 30 to be transferred such as a micro light-emitting diode chip, the uneven degree of the impact force received by the micro-component 30 to be transferred in the middle region 11 and the edge region 12, such as a micro light-emitting diode chip, is reduced, and the problem that the micro-component 30 to be transferred, such as a micro light-emitting diode chip, is easily broken when separated from the substrate 10 is solved, thereby improving the transfer success rate; and / or when the proportion of the photosensitive adhesive layer 20 in the middle region 11 is less than 100%, compared with the technical solution in which the photosensitive adhesive layer 20 completely covers the middle region 11, the technical solution provided by the embodiment of the present invention reduces the area of the photosensitive adhesive layer 20 in the middle region 11, reduces the uneven degree of the impact force received by the micro-component 30 to be transferred in the middle region 11 and the edge region 12, such as a micro light-emitting diode chip, solves the problem that the micro-component 30 to be transferred, such as a micro light-emitting diode chip, is easily broken when separated from the substrate 10, and improves the transfer success rate.

[0062] It should be noted that the specific shapes of the middle region 11 and the edge region 12 can be determined according to the shape of the irradiated light spot and the shape of the micro-component 30 to be transferred, such as a micro light-emitting diode chip.

[0063] Optionally, referring to Figure 3 , in the direction perpendicular to the thickness of the substrate 10, the cross-sectional area of the photosensitive adhesive layer 20 in the middle region 11 is smaller than the cross-sectional area of the photosensitive adhesive layer 20 in the edge region 12.

[0064] It should be noted that the direction perpendicular to the thickness of the substrate 10 is parallel to the X direction in the XOY plane rectangular coordinate system.

[0065] When the energy of the light rays emitted by the light source 50 is Gaussian-distributed, that is, the energy of the light rays irradiating the middle region 11 is greater than that of the light rays in the edge region 12. In the related art, when the region where the energy of the light rays emitted by the light source 50 is relatively large is greater than the region where the energy is relatively small, that is, the area of the middle region 11 is greater than the area of the edge region 12. However, in the technical solution of the present application, the cross-sectional area of the photosensitive adhesive layer 20 located in the middle region 11 is smaller than the cross-sectional area of the photosensitive adhesive layer 20 located in the edge region 12, so that the force-bearing area of the micro-component to be transferred 30, such as a micro light-emitting diode chip, that bears a large impact force is reduced. For the micro-component to be transferred 30, such as a micro light-emitting diode chip, the degree of non-uniformity of the impact force received by the micro-component to be transferred 30, such as a micro light-emitting diode chip, located in the middle region 11 and the edge region 12 is further reduced, and the problem that the micro-component to be transferred 30, such as a micro light-emitting diode chip, is easily broken when the micro-component to be transferred 30, such as a micro light-emitting diode chip, is separated from the substrate 10 is solved, and the transfer success rate is improved.

[0066] Figure 4 It is a schematic structural diagram of another transfer structure of a micro-component provided by an embodiment of the present invention. Optionally, refer to Figure 4 , the orthographic projection of the photosensitive adhesive layer 20 on the substrate 10 and the orthographic projection of the middle region 11 on the substrate 10 do not overlap.

[0067] Specifically, the photosensitive adhesive layer 20 does not cover the middle region 11, and the force-bearing area of the micro-component to be transferred 30, such as a micro light-emitting diode chip, that bears a large impact force is reduced to zero. For the micro-component to be transferred 30, such as a micro light-emitting diode chip, the degree of uniformity of the impact force received by the force-bearing area of the micro-component to be transferred 30, such as a micro light-emitting diode chip, is improved, and the problem that the micro-component to be transferred 30, such as a micro light-emitting diode chip, is easily broken when the micro-component to be transferred 30, such as a micro light-emitting diode chip, is separated from the substrate 10 is solved, and the transfer success rate is further improved.

[0068] Figure 5 It is a schematic structural diagram of another transfer structure of a micro-component provided by an embodiment of the present invention. Optionally, refer to Figure 5 , the thickness of the photosensitive adhesive layer 20 located in the middle region 11 is smaller than the thickness of the photosensitive adhesive layer 20 located in the edge region 12 and the proportion of the photosensitive adhesive layer 20 in the middle region 11 is less than 100%.

[0069] Specifically, when the photosensitive adhesive layer 20 is located in the middle region 11 and the edge region 12, the thickness of all the photosensitive adhesive layers 20 in the middle region 11 is less than that of the photosensitive adhesive layer 20 in the edge region 12, and the proportion of the photosensitive adhesive layer 20 in the middle region 11 is less than 100%. This reduces the amount and area of the photosensitive adhesive layer 20 in the middle region 11, thereby reducing the volume of the photosensitive adhesive layer 20 in the gaseous state under light irradiation, and reducing the impact force value borne by the micro-components 30 to be transferred in the middle region 11, such as micro light-emitting diode chips. For the micro-components 30 to be transferred, such as micro light-emitting diode chips, it reduces the unevenness of the impact force received by the micro-components 30 to be transferred in the middle region 11 and the edge region 12, such as micro light-emitting diode chips, solves the problem that the micro-components 30 to be transferred, such as micro light-emitting diode chips, are prone to fragmentation when separated from the substrate 10, and improves the transfer success rate.

[0070] Optionally, referring to Figure 3 and Figure 5 , the photosensitive adhesive layer 20 in the middle region 11 is connected to the photosensitive adhesive layer 20 in the edge region 12.

[0071] Since for the photosensitive adhesive layer 20 with the same thickness and the same area, the closer the photosensitive adhesive layer 20 is to the central position of the middle region 11, the greater the impact force of the photosensitive adhesive layer 20 on the micro-components 30 to be transferred, such as micro light-emitting diode chips. Therefore, in the embodiments of the present invention, connecting the photosensitive adhesive layer 20 in the middle region 11 to the photosensitive adhesive layer 20 in the edge region 12, compared with the technical solution in which the photosensitive adhesive layer 20 in the middle region 11 and the photosensitive adhesive layer 20 in the edge region 12 are independently arranged, makes the photosensitive adhesive layer 20 in the middle region 11 as close as possible to the edge region 12, thereby reducing the impact force value borne by the micro-components 30 to be transferred in the middle region 11. For the micro-components 30 to be transferred, such as micro light-emitting diode chips, it reduces the unevenness of the impact force received by the micro-components 30 to be transferred in the middle region 11 and the edge region 12, such as micro light-emitting diode chips, solves the problem that the micro-components 30 to be transferred, such as micro light-emitting diode chips, are prone to fragmentation when separated from the substrate 10, and improves the transfer success rate.

[0072] Optionally, the orthographic projection pattern of the photosensitive adhesive layer 20 corresponding to each micro-component to be transferred on the substrate 10 is a centrosymmetric pattern about the center of the micro-component 30 to be transferred.

[0073] It can be understood that the photosensitive adhesive layer 20 corresponding to each micro-component to be transferred refers to the photosensitive adhesive layer 20 whose orthographic projection on the substrate 10 coincides with the orthographic projection of each micro-component to be transferred on the substrate 10.

[0074] Specifically, the orthographic projection pattern of the photosensitive adhesive layer 20 on the substrate 10 is centrosymmetric about the center of the micro-component to be transferred 30, for example, a micro light-emitting diode chip. In the thickness direction perpendicular to the substrate 10, when the photosensitive adhesive layer 20 becomes gaseous under light irradiation, the impact force of the photosensitive adhesive layer 20 on the micro-component to be transferred 30, for example, a micro light-emitting diode chip, is centrosymmetrically distributed about the center of the micro-component to be transferred 30, for example, a micro light-emitting diode chip. For the micro-component to be transferred 30, for example, a micro light-emitting diode chip, the symmetry degree of the impact force received by different regions is improved, and the problem that the micro-component to be transferred 30, for example, a micro light-emitting diode chip, is easily broken when separated from the substrate 10 is solved, and the success rate of transfer is improved.

[0075] Figure 6 It is a top view of a micro-component and a photosensitive adhesive layer provided by an embodiment of the present invention. Figure 7 It is another top view of a micro-component and a photosensitive adhesive layer provided by an embodiment of the present invention. Figure 8 It is yet another top view of a micro-component and a photosensitive adhesive layer provided by an embodiment of the present invention. Figure 9 It is yet another top view of a micro-component and a photosensitive adhesive layer provided by an embodiment of the present invention. Figure 10 It is yet another top view of a micro-component and a photosensitive adhesive layer provided by an embodiment of the present invention.

[0076] Optionally, referring to Figures 6 - 10 , the photosensitive adhesive layer 20 corresponding to each placement area 10A includes at least one photosensitive adhesive area.

[0077] Exemplarily, referring to Figures 6 - 8 , the photosensitive adhesive layer 20 corresponding to each placement area 10A includes a photosensitive adhesive area 21 and a photosensitive adhesive area 22. Referring to Figure 9 , the photosensitive adhesive layer 20 corresponding to each placement area 10A includes a photosensitive adhesive area 23, a photosensitive adhesive area 24, a photosensitive adhesive area 25, and a photosensitive adhesive area 26. Referring to Figure 10 , the photosensitive adhesive layer 20 corresponding to each placement area 10A includes a photosensitive adhesive area 27.

[0078] As the area of the photosensitive adhesive region increases, when the photosensitive adhesive layer 20 becomes gaseous under light irradiation, it will generate an impact force on the micro-component 30 to be transferred, such as a micro light-emitting diode chip, and push it to the target substrate 40. On this basis, the amount of the photosensitive adhesive layer 20 can be reduced by reasonably setting the number of photosensitive adhesive regions, thereby achieving the technical effect of reducing the cost of the transfer structure of the micro-component 30 to be transferred, such as a micro light-emitting diode chip.

[0079] Optionally, referring to Figures 6 - 10 , in the direction perpendicular to the thickness of the substrate 10, the cross-sectional pattern of the photosensitive adhesive region includes at least one of a circle, an ellipse, a ring, and a polygon.

[0080] Exemplarily, referring to Figure 6 , in the direction perpendicular to the thickness of the substrate 10, the cross-sectional patterns of the photosensitive adhesive regions 21 and 22 are rectangles. Referring to Figure 7 , the cross-sectional patterns of the photosensitive adhesive regions 21 and 22 are ellipses. Referring to Figure 8 , the cross-sectional patterns of the photosensitive adhesive regions 21 and 22 are partial rings. Referring to Figure 10 , the cross-sectional pattern of the photosensitive adhesive region 27 is a complete ring. Referring to Figure 9 , the cross-sectional patterns of the photosensitive adhesive regions 23, 24, 25, and 26 are circles.

[0081] Specifically, in the direction perpendicular to the thickness of the substrate 10, the cross-sectional pattern of the photosensitive adhesive region includes at least one of a circle, an ellipse, a ring, and a polygon, which enriches the types of cross-sectional patterns of the photosensitive adhesive region. The cross-sectional pattern of the photosensitive adhesive region with less usage can be specifically selected according to the shape of the light spot and the shape of the micro-component 30 to be transferred, such as a micro light-emitting diode chip, thereby achieving the technical effect of reducing the cost of the transfer structure of the micro-component 30 to be transferred, such as a micro light-emitting diode chip.

[0082] It can be understood that the size of the photosensitive adhesive region can be specifically set according to the actual situation and is not specifically limited herein.

[0083] Optionally, a hollow pattern can also be provided in the photosensitive adhesive region.

[0084] Specifically, a hollow pattern (not shown in the figure) is provided in the photosensitive adhesive region, so that when the photosensitive adhesive layer 20 becomes gaseous under laser irradiation, it will generate an impact force on the micro-component 30 to be transferred, such as a micro light-emitting diode chip, and push the micro-component 30 to be transferred, such as a micro light-emitting diode chip, to the target substrate 40. On this basis, the amount of the photosensitive adhesive layer 20 is further reduced, and thus the cost of the transfer structure of the micro-component 30 to be transferred, such as a micro light-emitting diode chip, is further reduced.

[0085] Exemplarily, in the micro light-emitting diode chip shown in the embodiments of the present invention, the positive electrode pad and the negative electrode pad are located on the same side of the micro light-emitting diode chip, on the surface of the micro light-emitting diode chip away from the substrate 10. The technical solution of the embodiments of the present invention is also applicable to the technical solution where the positive electrode pad and the negative electrode pad are located on the same side of the micro light-emitting diode chip and on the surface of the micro light-emitting diode chip adjacent to the substrate 10. The technical solution where the positive electrode pad and the negative electrode pad are horizontally arranged in the micro light-emitting diode chip shown in the embodiments of the present invention, and the technical solution of the embodiments of the present invention is also applicable to the technical solution where the positive electrode pad and the negative electrode pad are vertically arranged.

[0086] Figure 11 It is a schematic structural diagram of another transfer structure of a micro component provided by the embodiments of the present invention. Optionally, referring to Figure 11 , the transfer structure of the micro component further includes an adhesive layer 60, and the adhesive layer 60 is located on the surface of the micro component 30 to be transferred adjacent to the photosensitive adhesive layer 20.

[0087] Exemplarily, the adhesive layer 60 is composed of an organic adhesive material commonly used in chip packaging.

[0088] It should be noted that Figure 11 the shown transfer structure of the micro component is illustrated by taking the Figure 4 shown transfer structure of the micro component as an example.

[0089] Figure 11 The transfer method of the shown transfer structure of the micro component for transferring the micro component to be transferred is as follows:

[0090] Step 210: Light passes through the substrate and irradiates the photosensitive adhesive layer.

[0091] Referring to Figure 11 , light passes through the substrate 10 and irradiates the photosensitive adhesive layer 20.

[0092] Step 220: The photosensitive adhesive layer becomes gaseous under laser irradiation, and the adhesive layer bulges toward the micro component to be transferred, so that the micro component to be transferred is transferred to the target substrate.

[0093] Referring to Figure 11 , the photosensitive adhesive layer 20 becomes gaseous under laser irradiation, and the adhesive layer 60 bulges toward the micro component 30 to be transferred, for example, a micro light-emitting diode chip, so that the micro light-emitting diode chip is transferred to the target substrate 40.

[0094] Specifically, when the photosensitive adhesive layer 20 is in a gaseous state under light irradiation, it generates an impact force on the adhesive layer 60, causing the adhesive layer 60 to bulge toward the side of the micro light-emitting diode chip, reducing the contact area between the adhesive layer 60 and the micro component to be transferred 30, such as a micro light-emitting diode chip. As a result, the micro component to be transferred 30, such as a micro light-emitting diode chip, is separated from the substrate 10 and transferred to the target substrate 40. Since there is an adhesive layer 60 between the photosensitive adhesive layer 20 and the micro component to be transferred 30, such as a micro light-emitting diode chip, compared with the technical solution where the photosensitive adhesive layer 20 is in direct contact with the micro component to be transferred 30, such as a micro light-emitting diode chip, the impact force of the photosensitive adhesive layer 20 in a gaseous state under light irradiation on the micro component to be transferred 30, such as a micro light-emitting diode chip, is further reduced. This solves the problem that the micro component to be transferred 30, such as a micro light-emitting diode chip, is easily broken when separated from the substrate 10, and improves the success rate of transfer.

[0095] It should be noted that by setting the viscosity of the adhesive layer 60, when the photosensitive adhesive layer 20 is in a gaseous state under light irradiation, under the action of the impact force on the micro component to be transferred 30, such as a micro light-emitting diode chip, the micro component to be transferred 30, such as a micro light-emitting diode chip, can be separated from the substrate 10 and transferred to the target substrate 40 whether there is a contact area between the adhesive layer 60 and the micro component to be transferred 30, such as a micro light-emitting diode chip, or there is no contact area.

[0096] The embodiment of the present invention also provides a display panel. Figure 12 The following is a schematic structural diagram of a display panel provided by an embodiment of the present invention. Refer to Figure 12 The display panel includes a driving backplane 70;

[0097] A micro light-emitting diode chip array 300 is located on the surface of the driving backplane 70. The micro light-emitting diode chip array 300 includes a plurality of micro light-emitting diode chips 30, and the micro light-emitting diode chips 30 are transferred to the surface of the driving backplane 70 through the transfer structure of the micro component described in any of the above technical solutions.

[0098] The micro light-emitting diode chips 30 of the display panel provided by the embodiment of the present invention are transferred to the surface of the driving backplane 70 through the transfer structure of the micro component described in any of the above technical solutions. Therefore, the display panel provided by the embodiment of the present invention also has the beneficial effects described in the above embodiments, which will not be elaborated here. It should be noted that the display panel provided by the embodiment of the present invention can be applied to display devices with display functions such as mobile phones, computers, and wearable devices, and the embodiment of the present invention does not make any limitations in this regard.

[0099] It should be noted that in the embodiments of the present invention, the micro-components to be transferred and the micro light-emitting diode chips use the same reference numeral 30. Note that the above is only the preferred embodiment of the present invention and the technical principles applied. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, re-adjustments and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments only. Without departing from the concept of the present invention, more other equivalent embodiments can be included, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A transfer structure for a micro-component, characterized in that, Comprising: A substrate substrate, including at least one placement area for placing micro-elements to be transferred, the placement area including a middle area and an edge area surrounding the middle area; A photosensitive adhesive layer located on one side of the substrate substrate; Wherein, the photosensitive adhesive layer covers the middle area and the edge area, and the thickness of at least part of the photosensitive adhesive layer located in the middle area is less than the thickness of the photosensitive adhesive layer located in the edge area; or, the thickness of at least part of the photosensitive adhesive layer located in the middle area is less than the thickness of the photosensitive adhesive layer located in the edge area and the proportion of the photosensitive adhesive layer in the middle area is less than 100%.

2. The transfer structure of the micro-component according to claim 1, wherein The photosensitive adhesive layer becomes gaseous under laser irradiation.

3. The transfer structure of the micro-component according to claim 1 or 2, characterized in that, In the direction perpendicular to the thickness of the substrate substrate, the cross-sectional area of the photosensitive adhesive layer located in the middle area is less than the cross-sectional area of the photosensitive adhesive layer located in the edge area.

4. The transfer structure of the micro-component according to claim 1 or 2, characterized in that, The thickness of the photosensitive adhesive layer located in the middle area is less than the thickness of the photosensitive adhesive layer located in the edge area.

5. The transfer structure of the microelement according to claim 1, characterized in that, The photosensitive adhesive layer located in the middle area is connected to the photosensitive adhesive layer located in the edge area.

6. The transfer structure of the microelement according to any one of claims 1-5, characterized in that, The orthographic projection pattern of the photosensitive adhesive layer corresponding to each micro-element to be transferred on the substrate substrate is a centrosymmetric pattern about the center of the micro-element to be transferred.

7. The transfer structure of the micro component according to claim 6, characterized in that, The photosensitive adhesive layer corresponding to each placement area includes at least one photosensitive adhesive area.

8. The transfer structure of the micro-component according to claim 7, characterized in that, In the direction perpendicular to the thickness of the substrate substrate, the cross-sectional pattern of the photosensitive adhesive area includes at least one of a circle, an ellipse, a ring, and a polygon.

9. The transfer structure of the micro-component according to claim 1, wherein, It further includes an adhesive layer located on the surface of the micro-element to be transferred adjacent to the photosensitive adhesive layer.

10. A display panel, characterized in that, Including a driving backplane and a micro light-emitting diode chip array, the micro light-emitting diode chip array is located on the surface of the driving backplane; The micro light-emitting diode chip is transferred to the surface of the driving backplane through the transfer structure of the micro-element according to any one of claims 1-9.

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