A high-speed large-current driving circuit device

Abstract

The application relates to a high-speed and high-current driving circuit device, which comprises a pre-driver, a power driver and a discharge circuit, the power driver is connected with a load with direct-current high voltage; the pre-driver is composed of a high-speed and low-power triode, the output stage of the power driver adopts a high-voltage, high-speed and high-current N-MOS tube; the gate of the N-MOS tube adopts a diode to rapidly discharge a low level to achieve the purpose of rapid turn-off; the output of the pre-driver is connected with the gate of the power driver MOS tube, the drain of the power driver MOS tube is connected with the load with direct-current high voltage, and the discharge circuit is connected with the gate of the power driver MOS tube and the input end of a high-speed driving signal control input1 signal; when a high-speed small signal is input to the input end, the power driver MOS tube is driven to connect with the load with direct-current high voltage, so that the purpose of high-speed driving and high-current driving is achieved.

Description

Technical Field

[0001] This invention relates to the field of signal processing technology, specifically a high-speed, high-current drive circuit device. Background Technology

[0002] High-speed, high-current drive circuits are widely used in signal processing, high-voltage, high-current testing, and power drive technologies. However, in high-current drive circuits, the speed of the high-current drive signal often falls short of nanosecond (ns) levels; that is, high speed and high current are generally mutually exclusive. Achieving a 100A high-current drive while simultaneously maintaining a drive speed at the ns level is a crucial technical challenge that needs to be addressed in the field of high-speed drive signal processing.

[0003] A search using existing patent search tools revealed that the invention application "A High-Speed, High-Current Power Field-Effect Transistor Drive Circuit" (patent application number CN130825436A) discloses a high-speed, high-current power field-effect transistor drive circuit. Transistor drive circuit, such as Figure 3 As shown, the circuit includes a pre-drive circuit, a totem-pole circuit, and a post-drive circuit. The pre-drive circuit includes capacitor C1, resistors R1, R2, and R3, diode D1, and transistors T1 and T2. The totem-pole circuit includes diodes D2 and D3, resistors R4 and R11, capacitor C2, and MOSFETs Q1 and Q2. The post-drive circuit includes resistors R12 and R13, diodes D4 and D5, capacitor C3, and MOSFET Q3. The pre-drive circuit is connected to the drive signal Vg, and the post-drive circuit is connected to the driven object 3. The totem-pole circuit is connected between the pre-drive circuit and the post-drive circuit. This drive circuit has a simple structure, low cost, large output current, and strong load-carrying capacity, and can meet the requirements of high-speed, low-voltage, and high-current drive of MOSFETs under specific conditions.

[0004] The utility model patent "A High-Speed ​​High-Current Ignition Drive Circuit" has been granted (patent grant announcement CN205725704U). Figure 4 As shown, a utility model relates to a high-speed, high-current ignition drive circuit, including a charging circuit mainly composed of an energy storage capacitor C1, a switching circuit controlling the discharge of the energy storage capacitor, and a discharging circuit for transferring the electrical energy in the energy storage capacitor to the drive load. The key feature is that each circuit is a logic circuit. The beneficial effect of this utility model is its strong anti-electromagnetic interference capability, making it suitable for electromagnetically complex environments. This utility model patent uses a drive chip to drive a switch to charge and discharge a large capacitor, providing instantaneous charging and discharging functionality with a large peak current but a small average current, fundamentally different from the functional principle of the invention presented herein.

[0005] Patent application publication for the invention titled "A High-Voltage, High-Current Drive Circuit Applied in a Power Factor Corrector" (Patent Application Publication CN102403902A), as follows: Figure 5 As shown, this invention discloses a high-voltage, high-current drive circuit for use in the high-voltage pre-modulation circuit of a power factor corrector, comprising a current mirror circuit, a level shifting circuit, a high-voltage pre-modulation circuit, a dead-time control circuit, and a high-current output stage. It employs a Darlington output stage structure to increase the maximum operating frequency of the drive circuit. However, the circuit structure is complex, and the drive speed cannot reach the nanosecond level. Summary of the Invention

[0006] The purpose of this invention is to provide a high-speed, high-current drive circuit device to solve the problem of high speed during high-current drive and greatly improve the speed during high-current drive.

[0007] This invention provides a technical solution for achieving high speeds under high current driving conditions: A high-speed, high-current drive circuit device, characterized in that it includes: a pre-driver, a power driver, and a discharge circuit, wherein the power driver is connected to a load with DC high voltage; The preamplifier is composed of a high-speed, low-power transistor Q21, and the power driver output stage uses a high-voltage, high-speed, high-current N-MOS transistor. The gate of the N-MOS transistor uses a diode D11 to enable rapid low-level discharge for fast turn-off. The output of the preamplifier driver is connected to the gate of the power driver MOSFET, and the drain of the power driver MOSFET is connected to a load with high DC voltage. The discharge circuit is connected to the gate of the power driver MOSFET and the input terminal of the high-speed drive signal control input1signal. When a high-speed small signal is input to the input terminal, the power driver MOSFET drives the load with high DC voltage at high speed and high current, thus achieving the purpose of high-speed drive and high current.

[0008] Furthermore, one end of resistor R11 is connected to the input terminal of the high-speed drive signal control input1 signal, and the other end is connected to the base of the high-speed transistor Q21 to form a pre-drive circuit. The positive P terminal of diode D11 is connected to the emitter of transistor Q21, and the negative N terminal of diode D11 is connected to the input terminal of the high-speed drive signal to form a discharge circuit. The emitter (E) of transistor Q21 is also connected to the gate (G) of the power driver N-MOS transistor. The collector (C) of transistor Q21 is connected to a low-voltage DC 10V voltage (Vcc1) to provide a high-level DC drive for the gate (G) of the power driver circuit. The drain (D) of the power driver N-MOS transistor is connected to the negative terminal of the load, and the positive terminal of the load is connected to a high-voltage DC voltage (above 650V). The source (S) of the power driver N-MOS transistor is connected to the power ground and the drive ground (GND). A resistor (R21) is connected between the gate and GND.

[0009] This invention employs a high-speed, low-power transistor Q21 to construct the pre-stage drive circuit; the emitter (E) is connected to the gate of an N-MOS transistor Q11 to achieve rapid turn-on. The output stage uses a high-voltage, high-speed, high-current N-MOS transistor; the gate of the N-MOS transistor uses a diode to rapidly discharge low-level signals for rapid turn-off. The N-MOS transistor used has a maximum peak on-state current of 100A to achieve high-current drive.

[0010] The principle of this invention consists of a front-stage high-speed NPN transistor and a rear-stage N-type MOSFET, with a fast gate discharge circuit for the MOSFET. The drain (D) of the NMOSFET is connected to the load and the high-voltage power supply, achieving a driving voltage of up to 650V, a rise time of 15ns, a fall time of 20ns, and a peak current of up to 100A. This invention is of great significance for improving high-speed, high-current driving technology.

[0011] The present invention uses an NMOS transistor in the subsequent stage, and the switching transistor in the previous stage is saturated and conducting without resistance. The large current charges the gate capacitor of the NMOS transistor without resistance and without delay, and quickly reaches the turn-on threshold voltage of the NMOS transistor without turn-on delay. Moreover, when the input is low level, it discharges through the gate to the diode in the forward direction, and the turn-off is also rapid. Attached Figure Description

[0012] The attached diagram is described below: Figure 1 This is the circuit schematic diagram of the present invention; Figure 2 This is a schematic block diagram of the circuit of the present invention; Figure 3 It is a schematic diagram of an existing high-speed, high-current power MOSFET driver circuit; Figure 4 This is a schematic diagram of an existing high-speed, high-current ignition drive circuit; Figure 5 This is a schematic diagram of a high-voltage, high-current drive circuit used in power factor correction devices. Detailed Implementation

[0013] As attached Figure 2As shown, this invention provides a high-speed, high-current drive circuit device, including: a pre-driver, a power driver, a load connected to a DC high voltage, and a discharge circuit. The output of the pre-driver is connected to the gate of the power driver MOSFET, the drain of the power driver MOSFET is connected to the load connected to a DC high voltage, and the discharge circuit connects the gate of the power driver MOSFET and the input terminal of a high-speed drive signal (control input signal). When a high-speed, small-signal drive is input to the input terminal, the power driver MOSFET drives the load connected to the DC high voltage with a high-speed, high-current output, achieving the purpose of high-speed, high-current drive.

[0014] The specific circuit principle and connection relationship of this invention are as follows: Figure 1 As shown: Resistor R11 and high-speed transistor Q21 form a pre-drive circuit (a high-gain transistor is selected to amplify the current, and the large current charges the gate capacitor of the subsequent NMOS transistor). The positive terminal (P) of diode D11 is connected to the emitter of transistor Q21, and the negative terminal (N) of D11 is connected to the input terminal of the high-speed drive signal. The emitter (E) of transistor Q21 is also connected to the gate (G) of the power drive MOS transistor Q11, and the collector (C) of transistor Q21 is connected to a low-voltage DC 10V voltage V. cc1 This provides a high DC drive level for the gate G of the power drive circuit. The drain D of the power drive MOSFET Q11 is connected to the negative terminal of the load (typically a high-current TVS diode as the load; a voltage VCC2 is applied instantaneously to the TVS diode to ground, and the instantaneous peak current of the high-voltage TVS diode is measured). The positive terminal of the load is connected to a DC high voltage level of 650V or higher (i.e.,...). Figure 1 Chinese V CC2 The source (S) of the power drive MOSFET is connected to both power ground and drive ground (GND). A resistor R21 is also connected between the gate of the MOSFET and GND.

Claims

1. A high-speed, high-current drive circuit device, characterized in that... include: The system includes a preamplifier, a power driver, and a discharge circuit. The power driver is connected to a load with a high DC voltage. The preamplifier is composed of high-speed, low-power transistors, while the power driver output stage uses a high-voltage, high-speed, high-current N-MOS transistor. The gate of the N-MOS transistor uses a diode to enable rapid low-level discharge for fast turn-off. The output of the preamplifier is connected to the gate of the power driver MOSFET, and the drain of the power driver MOSFET is connected to the load with DC high voltage. The discharge circuit is connected to the gate of the power driver MOSFET and the input terminal of the high-speed drive signal control input1signal. When a high-speed small signal is input to the input terminal, the power driver MOSFET drives the load with DC high voltage at high speed and high current, thereby achieving the purpose of high-speed drive and high current. One end of resistor R11 is connected to the input terminal of the high-speed drive signal control input1 signal, and the other end is connected to the base of the high-speed low-power transistor Q21 to form a pre-drive circuit. The positive terminal P of diode D11 is connected to the emitter of transistor Q21, and the negative terminal N of diode D11 is connected to the input terminal of high-speed drive signal to form a discharge circuit. The emitter E of transistor Q21 is also connected to the gate G of the power drive N-MOS transistor, and the collector C of transistor Q21 is connected to the low-voltage DC Vcc1 voltage, providing a DC drive high level for the gate G of the power drive circuit. The drain (D) of the N-MOS transistor in the power driver is connected to the negative terminal of the load, and the positive terminal of the load is connected to a DC high voltage level of 650V or higher. The source (S) of the power driver N-MOS transistor is connected to the power ground and the drive ground (GND) terminal, and a resistor R21 is connected between the gate and GND.

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