Display panel, manufacturing method and display device

Abstract

The application provides a display panel, a preparation method thereof and a display device. The display panel comprises a substrate, a first pixel defining layer, a reflective electrode layer, a first structure layer and a second pixel defining layer. The first pixel defining layer comprises a first opening region and a first barrier wall surrounding the first opening region. The reflective electrode layer comprises a bottom surface and a side surface. The first structure layer comprises a conductor region covering the bottom surface and a non-conductor region at least partially covering the side surface. The second pixel defining layer is arranged on a side of the first pixel defining layer away from the substrate. The display panel, the preparation method thereof and the display device provided by the application can eliminate the second pixel defining layer in the first opening region, increase the range of the effective light-emitting area and improve the brightness of the display panel.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel, a preparation method thereof and a display device. BACKGROUND

[0002] Compared with liquid crystal display (LCD), OLED display products have the advantages of full solid structure, low energy consumption, low cost, self-luminous, wide viewing angle, fast response speed and flexible display, and are widely used in the display field, and can represent the next generation display technology with great competitiveness and development prospect.

[0003] However, as people's requirements for display products are getting higher and higher, the market needs OLED products with higher brightness. The brightness of conventional mobile OLED devices is only 500-600 nit, while the brightness of high-end OLED devices can be as high as 1000 nit or more. Therefore, how to balance the cost and high brightness of OLED devices has become a problem to be solved. SUMMARY

[0004] Therefore, the purpose of the present application is to provide a display panel, a preparation method thereof and a display device which overcome the above problems or at least partially solve the above problems.

[0005] To achieve the above purpose, the first aspect of the present application provides a display panel, comprising: a substrate, a first pixel defining layer disposed on a first side of the substrate, a reflective electrode layer disposed on the first side of the substrate and covering at least part of the first pixel defining layer, a first structure layer disposed on a side of the reflective electrode layer away from the substrate, and a second pixel defining layer disposed on a side of the first pixel defining layer away from the substrate.

[0006] The first pixel defining layer comprises a first opening region and a first barrier wall surrounding the first opening region; the reflective electrode layer comprises a bottom surface located in the first opening region and a side surface covering a first side wall of the first barrier wall; and the first structure layer comprises a conductor region covering the bottom surface of the reflective electrode layer and a non-conductor region at least partially covering the side surface of the reflective electrode layer.

[0007] Based on the same inventive concept, the second aspect of the present application further provides a display device comprising the display panel of the first aspect.

[0008] Based on the same inventive concept, the third aspect of the present application further provides a display panel preparation method for preparing the display panel of the first aspect, the method comprising:

[0009] forming a reflective electrode layer on one side of the substrate provided with the first pixel defining layer;

[0010] forming a semiconductor structure layer on a side of the reflective electrode layer away from the substrate base plate;

[0011] forming a to-be-doped pattern in the semiconductor structure layer by a patterning process, the to-be-doped pattern covering a bottom surface of the reflective electrode layer;

[0012] forming a conductor region in the semiconductor structure layer in the to-be-doped pattern by a doping process; other regions of the semiconductor structure layer except the to-be-doped pattern are non-conductor regions, to form a first structure layer;

[0013] forming a second pixel defining layer on top of the barrier of the first pixel defining layer.

[0014] As can be seen from the above, the display panel, the preparation method thereof and the display device provided by the present application have the following advantages. The first structure layer is arranged on the reflective electrode layer, and the non-conductor region of the first structure layer can replace the existing second pixel defining layer to cover the side surface of the reflective electrode layer, so as to prevent the corresponding area of the side surface of the reflective electrode layer from causing the microcavity length of the display panel to change, and meanwhile, short circuit is avoided. The conductor region of the first structure layer can form effective electrical connection between the reflective electrode layer and the light-emitting layer, and will not cause adverse effects on the normal operation of the light-emitting layer. Meanwhile, since the non-conductor region of the first structure layer can replace the existing second pixel defining layer, the second pixel defining layer in the present application can no longer be arranged in the first opening region, so that the range of the effective light-emitting region in the present application is larger, and the function of improving the brightness of the display panel is realized. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the present application or the related art, the following will briefly introduce the drawings needed to be used in the embodiments or the related art description. Obviously, the drawings in the following description are only embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort.

[0016] Figure 1 a schematic diagram of a display panel with a double-layer pixel defining layer structure in the related art;

[0017] Figure 2 a schematic diagram of a display panel according to an embodiment of the present application;

[0018] Figure 3 a top view schematic diagram of a second pixel defining layer, a substrate base plate and a structure layer therebetween of a display panel according to an embodiment of the present application;

[0019] Figures 4a to 4f a schematic diagram of a preparation process of a display panel according to an embodiment of the present application;

[0020] Figure 5A flowchart of a display panel manufacturing method according to an embodiment of the present application;

[0021] Figure 6 A schematic diagram of other functional structure layers of a display panel according to an embodiment of the present application. DETAILED DESCRIPTION

[0022] For the purpose of clarity, technical solutions in the present application are further described in detail below with reference to the embodiments and the accompanying drawings.

[0023] It should be noted that the relative arrangement of the components, numerical expressions, and numerical values set forth in these embodiments are not limiting to the scope of the present application unless otherwise specified.

[0024] It should be understood that the size of each part shown in the drawings is not drawn in accordance with the actual proportion relationship for the convenience of description.

[0025] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way limiting to the scope of the application or its applications or uses.

[0026] It should be noted that, unless otherwise defined, technical terms or scientific terms used in the embodiments of the present application should be understood as their common meanings to those skilled in the art to which the present application belongs. The terms "first", "second", and similar terms used in the embodiments of the present application do not represent any order, number, or importance, but are only used to distinguish different components. The terms "include" or "contain" and similar terms mean that the elements or objects before the terms encompass the elements or objects listed after the terms and their equivalents, and do not exclude other elements or objects. The terms "connect" or "connected" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms "up", "down", "left", "right", and the like only represent relative positional relationships, which can change when the absolute positions of the described objects change.

[0027] For improving the brightness of OLED products, there are various ways in the related art, for example: improving the brightness of the electroluminescent (EL) layer itself; improving the transmittance of the thin-film encapsulation (TFE) layer; making a color film (CF on EL, COE) on the electroluminescent layer and using a white organic light emitting diode (WOLED); using a micro-lens array or using a double-layer pixel definition layer and other ways. Among them, the way of using a double-layer pixel definition layer has become one of the commonly used implementation schemes for increasing the brightness of OLED products due to its simple process.

[0028] As shown in Figure 1 , the double-layer pixel definition layer structure in the related art is to add a reflective electrode layer 3 (usually a reflective anode layer) on the side wall of the first barrier wall 201 of the first pixel definition layer 2 to improve the light brightness of the OLED product. However, the reflective electrode layer 3 arranged on the first side wall 2011 of the first barrier wall 201 also causes some problems, for example, the light emitting layer 6 arranged on the reflective electrode layer 3 has a relatively thin material thickness in the area covering the first side wall 2011 during the plating process, and when the reflective electrode layer 3 is added on the first side wall 2011, it may cause the cavity length of the microcavity to change and thus cause the color coordinate of the device to change; at the same time, due to the relatively thin material thickness of the light emitting layer 6 covering the first side wall 2011 and the sharp corners of the first barrier wall 201, the reflective electrode layer 3 is directly in contact with the electrode (usually the cathode) on the other side of the light emitting layer 6, causing a short circuit. In order to avoid the above problems, the related art will use the existing non-conductive second pixel definition layer 11 to cover the above position on the reflective electrode layer 3, that is, the reflective electrode layer 3 and the light emitting layer 6 covering the first side wall 2011 and the sharp corner position of the first barrier wall 201 are separated by the second pixel definition layer 5.

[0029] However, the applicant found through research that although the above-mentioned setting method of the existing second pixel definition layer 11 can solve the problems of cavity length change and anode-cathode short circuit, in order to cover the reflective electrode layer 3 arranged on the first side wall 2011, the existing second pixel definition layer 11 needs to be partially arranged in the first opening area 202 (the dashed box in Figure 1 ) of the first pixel definition layer 2, and the existing second pixel definition layer 11 is usually made of a resin material with low resolution, which may cause overlay during the process, which makes the existing second pixel definition layer 11 located on the side wall of the first opening area 202 have a relatively large material layer thickness, that is, the existing second opening area 1101 of the existing second pixel definition layer 11 has a relatively large material layer thickness Figure 1The area within the dashed frame (in the image) is much smaller than the first opening region 202. Due to the blocking effect of the existing second pixel defining layer 11, an effective light-emitting area (i.e., the area where the reflective electrode layer 3 and the light-emitting layer 6 contact) can only be formed within the existing second opening region 1101, thus the range of the light-emitting area is somewhat limited.

[0030] In summary, in the dual-pixel-defining layer display panel of the related technology, although the brightness can be increased by the reflection effect of the reflective electrode layer 3 disposed on the first sidewall 2011, the range of the light-emitting area is limited by the existing second pixel-defining layer 11, so the effect of increasing brightness by this structure is also relatively limited.

[0031] In view of this, such as Figure 2 and Figure 3 This application provides a display panel, comprising: a substrate 1, a first pixel defining layer 2 disposed on a first side 101 of the substrate 1, a reflective electrode layer 3 disposed on the first side 101 of the substrate 1 and covering at least a portion of the first pixel defining layer 2, a first structural layer 4 disposed on the side of the reflective electrode layer 3 away from the substrate 1, and a second pixel defining layer 5 disposed on the side of the first pixel defining layer 2 away from the substrate 1; the first pixel defining layer 2 includes a first opening region 202 and a first barrier 201 surrounding the first opening region 202; the reflective electrode layer 3 includes a bottom surface 301 located within the first opening region 202 and a side surface 302 covering the first sidewall 2011 of the first barrier 201; the first structural layer 4 includes a conductive region 401 covering the bottom surface 301 of the reflective electrode layer 3 and a non-conductive region 402 at least partially covering the side surface 302 of the reflective electrode layer 3.

[0032] The reflective electrode layer 3 can be used as an anode layer or a cathode layer. The following description uses the reflective electrode layer 3 as an anode layer as an example.

[0033] The first structure layer 4 is a complete structure layer arranged on the reflective electrode layer 3. Part of the first structure layer 4 can be conductorized or non-conductorized by existing processes or by meeting certain triggering conditions. For example, the first structure layer 4 can be made of a metal oxide semiconductor, such as a transparent semiconductor IGZO. The first structure layer 4 can be conductorized in a preset area by ion implantation (doping) and the like, while other areas remain non-conductorized. The non-conductor area 402 of the first structure layer 4 can replace the existing second pixel defining layer 11 to cover the side surface 302 of the reflective electrode layer 3, and can also achieve the blocking effect of the reflective electrode layer 3 and the light-emitting layer 6 covering the first side wall 2011 of the first barrier wall 201. At the same time, since the material of the first structure layer 4 can be a metal oxide semiconductor, the thickness of the first structure layer 4 is thinner than the thickness of the existing second pixel defining layer 11 made of resin in the related art. Therefore, the first structure layer 4 covering the side surface 302 of the reflective electrode layer 3 is also located in the first opening area 202, but has little effect on the light-emitting area, that is, the light-emitting area of the display panel in the embodiment is larger than the light-emitting area of the double-layer pixel defining layer display panel in the foregoing related art, which helps to improve the brightness of the display panel in the embodiment.

[0034] In the embodiment, since the stacked and low-resolution second pixel defining layer 5 is only located on the side of the first pixel defining layer 2 away from the substrate 1, it no longer occupies the internal space of the first opening area 202, and therefore no longer limits the range of the light-emitting area in the first opening area 202.

[0035] The display panel provided in the embodiment includes the first structure layer 4 arranged on the reflective electrode layer 3. The non-conductor area 402 of the first structure layer 4 can replace the existing second pixel defining layer 11 to cover the side surface 302 of the reflective electrode layer 3, so as to prevent the corresponding area of the side surface 302 of the reflective electrode layer 3 from causing the microcavity length of the display panel to change, and to avoid short circuit. The conductor area 401 of the first structure layer 4 can form an effective electrical connection between the reflective electrode layer 3 and the light-emitting layer 6, and will not adversely affect the normal operation of the light-emitting layer 6. At the same time, since the non-conductor area 402 of the first structure layer 4 can replace the existing second pixel defining layer 11, the second pixel defining layer 5 in the display panel in the embodiment can no longer be arranged in the first opening area 202, so that the effective light-emitting area in the display panel in the embodiment is larger, and the function of improving the brightness of the display panel is achieved.

[0036] For example, when the first structure layer 4 is formed of IGZO, since the resolution and light transmittance of IGZO are higher than those of resin, compared with the existing second pixel defining layer 11 made of resin in the related art, the loss of light passing through the first structure layer 4 in the display panel of the embodiment is less than the loss of light passing through the existing second pixel defining layer 11, which helps to improve the brightness of the display panel of the embodiment.

[0037] In the embodiment, the first structure layer 4 is electrically connected to the light emitting layer 6 through the conductor region 401 of the first structure layer 4, but only ensuring electrical connection may not enable the light emitting layer 6 to achieve better light emitting performance, and therefore, in some embodiments, the work function of the conductor region 401 of the first structure layer 4 is matched with the work function of the light emitting layer 6 disposed on the side of the reflective electrode layer 3 away from the substrate 1.

[0038] The work function is also called work function or escape work, which refers to the minimum energy required to move an electron from the inside of a solid to the surface of the object in solid physics. In order to further ensure that the light emitting layer 6 in the display panel has better light emitting performance, the work function of the conductor region 401 of the first structure layer 4 needs to be adjusted according to the design to match the work function of the light emitting layer 6. For example, the work function of the conductor region 401 of the first structure layer 4 is greater than or equal to the work function of the light emitting layer 6, which helps to improve the brightness of the display panel of the embodiment. It should be noted that when the work function of the conductor region 401 is greater than the work function of the light emitting layer 6, the two are also relatively close.

[0039] In the embodiment, the first structure layer 4 can be made by deposition process, that is, the first structure layer 4 is a structure layer completely covering the reflective electrode layer 3 when it is initially formed. Although the non-conductor region 402 of the first structure layer 4 is mainly used to cover and separate the side surface 302 and the sharp corner position of the reflective electrode layer 3, in order to reduce the process difficulty and production cost, in addition to the region covering the bottom surface 301 of the reflective electrode layer 3 being conductorized, the rest of the first structure layer 4 remains in a continuous non-conductor state, such as Figure 2 In some embodiments, the non-conductor region 402 of the first structure layer 4 also at least partially covers the top surface 303 of the reflective electrode layer 3 on the top of the first stop wall 201. For the first structure layer 4 disposed on the top surface 303 of the reflective electrode layer 3, since it is a non-conductor, it will not have a great impact on other structure layers, and therefore, this part of the first structure layer 4 can be retained and does not need to be removed by patterning process.

[0040] In order to further reduce the influence of the second pixel defining layer 5 on the brightness of the display panel of the embodiment, such as Figure 2 and Figure 3As shown, in some embodiments, the second pixel defining layer 5 is disposed on the top of the first barrier 201 away from the substrate 1, and the orthographic projection of the second pixel defining layer 5 onto the substrate 1 is located inside the orthographic projection of the first barrier 201 onto the substrate 1. That is, the second pixel defining layer 5 is only located within the top range of the first barrier 201, and no part of the second barrier 501 extends into the first opening area 202, thus not blocking the light emitted from the light-emitting area, which helps to improve the brightness of the display panel in this embodiment.

[0041] like Figure 2 As shown, in some embodiments, the second pixel defining layer 5 includes a second barrier 501, which is disposed on the side of the first structural layer 4 away from the substrate 1. The second barrier 501 is disposed on the first structural layer 4 above the first barrier 201, and the area surrounded by the second barrier 501 forms a second opening area 502. In the display panel manufacturing process of this embodiment, the first structural layer 4 is formed first, and then the second pixel defining layer 5 is formed. Since the first structural layer 4 disposed on top of the first barrier 201 is continuous, the second barrier 501 can be directly disposed on the first structural layer 4 to simplify the manufacturing process of the display panel of this embodiment.

[0042] Meanwhile, since the second barrier 501 is located in the non-conductive region 402 of the first structural layer 4, the second barrier 501 can be made of either organic materials, such as resin, or inorganic materials, such as SiO / SiN. Since the existing second pixel defining layer 11 is usually made of resin, it is simpler to implement the second barrier 501 using organic materials from a process perspective.

[0043] In some embodiments, the second pixel defining layer 5 is an inorganic material layer. This is because a hole injection layer 7 (HIL) and a hole transport layer 8 (HTL) are provided in each second opening region 502. Since the second pixel defining layer 5 is an inorganic material layer, the second barrier 501 is also made of inorganic material. This second barrier 501 can form a barrier between adjacent second opening regions 502, so that the hole injection layer 7 and the hole transport layer 8 in each second opening region 502 are discontinuous structures, preventing lateral current crosstalk caused by their continuity.

[0044] To make the blocking effect of the second barrier 501 on the hole injection layer and hole transport layer more reliable, it is necessary to define the relationship between the height of the second barrier 501 and the total thickness of the two layers. For example... Figure 2 In some embodiments, the second pixel defining layer 5 further includes a second barrier 501 surrounding a formed second opening region 502, the second barrier 501 being along a first direction perpendicular to the top of the first barrier 201 (e.g., Figure 2The height a of the second barrier wall 501 in the Z direction is equal to or greater than the sum b of the thicknesses of the hole injection layer 7 and the hole transport layer 8 stacked in the second opening region 502 along the first direction. When the height a of the second barrier wall 501 is not less than the sum b of the thicknesses of the hole injection layer 7 and the hole transport layer 8 in the second opening region 502, neither of the hole injection layer 7 and the hole transport layer 8 can pass over the second barrier wall 501, that is, the second barrier wall 501 can completely block both of them, and the cross-talk of the transverse current caused by both of them can be more reliably prevented.

[0045] Although the higher the height of the second barrier wall 501 is, the more reliable the blocking effect is, the second barrier wall 501 with a too high height can also have adverse effects on the formation of the functional structure layer above it, especially the functional structure layer formed by the evaporation process, and the resistance of the whole electrode. Therefore, in some embodiments, the height a of the second barrier wall 501 and the sum b of the thicknesses of the hole injection layer 7 and the hole transport layer 8 satisfy a-b=0-50 angstrom. By limiting the height of the second barrier wall 501 to be equal to or higher than 50 angstrom than the sum of the thicknesses of the hole injection layer 7 and the hole transport layer 8, the blocking effect of the second barrier wall 501 on the hole injection layer 7 and the hole transport layer 8 can be ensured, and the adverse effects of the second barrier wall 501 on other structure layers above it can be avoided.

[0046] In order to avoid the sharp corner of the second barrier wall 501 causing a sharp corner leakage, in some embodiments, the slope angle c of the second barrier wall 501 is greater than or equal to 80°. Figure 2 When the slope angle of the second barrier wall 501 is greater than 80°, the side wall of the second barrier wall 501 is steep, and the cross section of the second barrier wall 501 along the thickness direction forms a shape close to a rectangle, avoiding the formation of a sharp corner.

[0047] Based on the same inventive concept, in combination with the description of the display panel in each of the above embodiments, the present embodiment provides a display panel preparation method, which has the corresponding technical effects of the display panel in each of the above embodiments, which will not be repeated here.

[0048] As Figure 5 A display panel preparation method for preparing the display panel described in each of the above embodiments, the method comprises:

[0049] Step S101: forming a reflective electrode layer on the first side of the substrate substrate provided with a first pixel defining layer.

[0050] First, a first pixel defining layer 2 including a first barrier wall 201 and a first opening region 202 is formed on the first side 101 of the substrate substrate 1 by using an existing process, as Figure 4a .

[0051] Then, a deposition process (Dep) and a patterning process are used to form a first structure layer 4 covering the first pixel defining layer 2 and the reflective electrode layer 3 broken between two adjacent first opening regions 202, as shown in Fig. 2. Figure 4b For example, when the reflective electrode layer 3 is a reflective anode layer, it can be an ITO / Ag layer or a Ti / Al layer.

[0052] In step S102, a semiconductor structure layer is formed on the side of the reflective electrode layer away from the substrate.

[0053] For example, to form the first structure layer 4, a complete semiconductor structure layer 14 can be first formed on the reflective electrode layer 3 by a deposition process. The semiconductor structure layer 14 can be a transparent semiconductor IGZO layer, as shown in Fig. 3. Figure 4c .

[0054] In step S103, a patterning process is used to form a to-be-doped pattern on the semiconductor structure layer, which covers the bottom surface of the reflective electrode layer.

[0055] For example, a photoresist (PR) layer is coated on the formed semiconductor structure layer 14, and a pre-designed mask is used to expose and develop the photoresist layer to form a to-be-doped pattern penetrating through the semiconductor structure layer 14, so that the semiconductor structure layer 14 covering the bottom surface 301 of the reflective electrode layer 3 is exposed.

[0056] In step S104, a doping process is used to make the semiconductor structure layer in the to-be-doped pattern into a conductor region; and the semiconductor structure layer in other regions except the to-be-doped pattern is a non-conductor region, to form the first structure layer.

[0057] In the doping process, P ions or B ions are injected into the semiconductor structure layer 14 in the to-be-doped pattern, so that the semiconductor structure layer 14 covering the bottom surface 301 of the reflective electrode layer 3 is made into a conductor region 401 of the first structure layer 4, as shown in Fig. 4. Figure 4d For the process parameters of the doping process, the work function of the conductor region 401 formed after doping needs to be adjusted to match the work function of the light-emitting layer 6. Then, the photoresist layer can be removed, and other regions of the semiconductor structure layer 14 remain unchanged and are still non-conductor regions 402 of the first structure layer 4. Thus, the first structure layer 4 is formed.

[0058] It should be noted that the first structure layer 4 is partially conductive to realize the electrical connection between the reflective electrode layer 3 and the light-emitting layer 6, because this way can maximize the effective connection area between the reflective electrode layer 3 and the light-emitting layer 6. If other ways are used, for example, the first structure layer 4 covering the bottom surface 301 of the reflective electrode layer 3 is removed by etching, although the electrical connection between the reflective electrode layer 3 and the light-emitting layer 6 can be realized, the etching process is limited by the related technology, and the area size precision formed by etching is much smaller than the area size precision formed by doping. Therefore, in order to ensure that the first structure layer 4 can completely cover the side surface 302 of the reflective electrode layer 3, the etching area needs to be reduced, and therefore the effective connection area between the reflective electrode layer 3 and the light-emitting layer 6 is also reduced.

[0059] In step S105, a second pixel defining layer is formed on the top of the first barrier of the first pixel defining layer.

[0060] For example, the second barrier 501 of the second pixel defining layer 5 is formed by a dry etching process such as an inductively coupled plasma (ICP) etching process, which can ensure that the sidewall of the second barrier 501 is almost perpendicular to the top surface of the first barrier 201, that is, the slope angle c of the second barrier 501 is greater than 80°, such as Figure 4e .

[0061] After the above steps are completed, other processes such as evaporation can be used to form functional layers such as a hole injection layer 7, a hole transport layer 8, a light-emitting layer 6 (EML, including a red sub-pixel light-emitting layer R-MEL or a green sub-pixel light-emitting layer G-MEL or a blue sub-pixel light-emitting layer B-MEL), an electron transport layer 12 (ETL), an electron injection layer 13 (EIL), and a cathode layer 9 (such as a MgAg layer or an IZO layer) on the basis of the above structure, and an encapsulation layer (Encap) 10, such as Figure 2 and Figure 4f .

[0062] For example, the functional layers and the corresponding thicknesses of the display panel are as shown in Figure 6 .

[0063] Based on the same inventive concept and the description of the display panel of each of the above embodiments, the present embodiment provides a display device having the corresponding technical effects of the display panel of each of the above embodiments, which will not be described here.

[0064] A display device includes the display panel described in each of the above embodiments.

[0065] It is to be understood that the foregoing description is exemplary of the application only and is intended to provide an overview for the understanding of the present application and is not intended to limit the application to the specific form described. From the above description, one skilled in the art can easily ascertain the manner of using the application, the method of operation and the combination of parts and steps to implement the application.

[0066] Each of the individual embodiments in the present application is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between embodiments can be mutually referred to.

[0067] The description in the present application is given for the purpose of illustration and description, and is not intended to be exhaustive or to limit the application to the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. Embodiments are chosen and described in order to best explain the principles of the application and its practical application, and to enable others skilled in the art to understand the application for various embodiments with various modifications as are suited to the particular use contemplated.

[0068] Those of ordinary skill in the art will understand that the above discussion of any embodiment is merely exemplary and is not intended to suggest that the scope of the application (including the claims) is limited to these examples; the embodiments or technical features between different embodiments can be combined, steps can be implemented in any order, and there are many other variations of the aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of brevity.

[0069] Although the present application has been described in connection with certain specific embodiments thereof, many modifications, changes and variations will be apparent to those skilled in the art.

[0070] Embodiments of the present application are intended to cover all such modifications, changes and variations as fall within the broad scope of the appended claims. Accordingly, any omission, modification, equivalent replacement, improvement, etc. made in the spirit and principle of the embodiments of the present application shall be included in the scope of protection of the present application.

Claims

1. A display panel, characterized by, The display panel comprises: a substrate, a first pixel defining layer disposed on a first side of the substrate, a reflective electrode layer disposed on the first side of the substrate and covering at least part of the first pixel defining layer, a first structure layer disposed on a side of the reflective electrode layer away from the substrate, and a second pixel defining layer disposed on a side of the first pixel defining layer away from the substrate; the first pixel defining layer comprises a first opening region and a first spacer wall surrounding the first opening region; the reflective electrode layer comprises a bottom surface in the first opening region and a side surface covering a first side wall of the first spacer wall; the first structure layer comprises a conductor region covering the bottom surface of the reflective electrode layer and a non-conductor region covering at least part of the side surface of the reflective electrode layer; wherein the first structure layer is a semiconductor structure layer, and the conductor region contains a doping material; the second pixel defining layer is disposed on a top of the first spacer wall away from the substrate, and a projection of the second pixel defining layer on the substrate is inside a projection of the first spacer wall on the substrate.

2. The display panel of claim 1, wherein, a work function of the conductor region of the first structure layer matches a work function of a light-emitting layer disposed on a side of the reflective electrode layer away from the substrate.

3. The display panel of claim 2, wherein, the work function of the conductor region of the first structure layer is greater than or equal to the work function of the light-emitting layer.

4. The display panel of claim 1, wherein, the non-conductor region of the first structure layer also covers a top surface of the reflective electrode layer on the top of the first spacer wall.

5. The display panel of claim 1, wherein, the second pixel defining layer is an inorganic material layer.

6. The display panel of claim 1, wherein, the second pixel defining layer comprises a second spacer wall disposed on a side of the first structure layer away from the substrate.

7. The display panel of claim 6, wherein, the second pixel defining layer further comprises a second opening region surrounded by the second spacer wall, and a height of the second spacer wall in a first direction perpendicular to a top of the first spacer wall is equal to or greater than a sum of thicknesses of a hole injection layer and a hole transport layer stacked in the second opening region in the first direction.

8. The display panel of claim 7, wherein, the height of the second spacer wall is a, and the sum of the thicknesses of the hole injection layer and the hole transport layer is b, and a difference between a and b is 0-50 angstroms.

9. The display panel of claim 6, wherein, a slope angle of the second spacer wall is greater than or equal to 80°.

10. A display device, characterized by comprising: The display panel comprises:

11. A method for manufacturing a display panel, characterized in that, a method for manufacturing the display panel, the method comprising: forming a reflective electrode layer on a side of a substrate provided with a first pixel defining layer; forming a semiconductor structure layer on a side of the reflective electrode layer away from the substrate; forming a to-be-doped pattern in the semiconductor structure layer by a patterning process, the to-be-doped pattern covering a bottom surface of the reflective electrode layer; forming a conductor region in the semiconductor structure layer in the to-be-doped pattern by a doping process; and forming a non-conductor region in the semiconductor structure layer other than the to-be-doped pattern to form a first structure layer; forming a second pixel defining layer on a top of a spacer wall of the first pixel defining layer.

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