Sensing device and method of manufacturing thereof

Abstract

The present disclosure provides a sensing device and a manufacturing method thereof. The sensing device includes a substrate, a first electrode, and a sensing layer. The first electrode is disposed on the substrate. The sensing layer is disposed on the first electrode and has a first surface adjacent to the first electrode. A length of the first electrode is less than a length of the first surface. The manufacturing method of the sensing device includes the following steps: providing the substrate; forming the sensing layer on the substrate; and forming the first electrode on the substrate such that the first electrode is disposed between the sensing layer and the substrate. The sensing layer has the first surface adjacent to the first electrode, and the length of the first electrode is less than the length of the first surface of the sensing layer. The sensing device and the manufacturing method thereof according to the embodiments of the present disclosure can reduce stray capacitance or electronic noise.

Description

Technical Field

[0001] This disclosure relates to a sensing device and a method for manufacturing the same, and more particularly to a sensing device and a method for manufacturing the same that can reduce stray capacitance or electronic noise. Background Technology

[0002] Sensing devices (such as X-ray sensors) can be used in medical imaging and / or non-destructive industrial inspection. Utilizing the high penetrability of X-rays, X-ray sensors can perform detection without damaging the object being inspected, and are widely used in personal biometric checks, airport baggage or passenger security screenings, etc., leading to increasingly stringent quality requirements for sensing devices. Summary of the Invention

[0003] This disclosure provides a sensing device and a method for manufacturing the same, which can reduce stray capacitance or electronic noise.

[0004] According to embodiments of this disclosure, the sensing device includes a substrate, a first electrode, and a sensing layer. The first electrode is disposed on the substrate. The sensing layer is disposed on the first electrode and has a first surface adjacent to the first electrode. The length of the first electrode is less than the length of the first surface.

[0005] According to embodiments of this disclosure, a method for manufacturing a sensing device includes the following steps: providing a substrate; forming a sensing layer on the substrate; and forming a first electrode on the substrate, such that the first electrode is disposed between the sensing layer and the substrate. The sensing layer has a first surface adjacent to the first electrode, and the length of the first electrode is less than the length of the first surface of the sensing layer. Attached Figure Description

[0006] The accompanying drawings are included to further illustrate this disclosure, and are incorporated in and form a part of this specification. The drawings illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the disclosure.

[0007] Figure 1A This is a top view schematic diagram of a sensing device according to an embodiment of the present disclosure;

[0008] Figure 1B for Figure 1A A schematic cross-sectional view of the sensing device along section line I-I';

[0009] Figure 1C for Figure 1B An enlarged schematic diagram of region A;

[0010] Figure 1D for Figure 1A A schematic diagram of the sensing device along section line Ⅱ-Ⅱ';

[0011] Figure 2This is a flowchart illustrating a method for manufacturing a sensing device according to an embodiment of the present disclosure;

[0012] Figures 3A to 3F This is a cross-sectional schematic diagram of a method for manufacturing a sensing device according to an embodiment of the present disclosure;

[0013] Figures 4A to 4D This is a cross-sectional schematic diagram of a method for manufacturing a sensing device according to another embodiment of the present disclosure;

[0014] Figures 5A to 5G This is a cross-sectional schematic diagram of a method for manufacturing a sensing device according to another embodiment of the present disclosure;

[0015] Figures 6A to 6F This is a cross-sectional schematic diagram of a method for manufacturing a sensing device according to another embodiment of the present disclosure.

[0016] Explanation of icon numbers

[0017] 10: Sensing devices;

[0018] 100: Sensing unit;

[0019] 110: substrate;

[0020] 111: Base;

[0021] 112: Transistor;

[0022] 113: Insulation layer;

[0023] 113a, 151: Openings;

[0024] 120: First electrode;

[0025] 121, 122: Side;

[0026] 123: First electrode material;

[0027] 123a: Pattern of the first electrode material;

[0028] 130: Sensing layer;

[0029] 131: First surface;

[0030] 132: Second surface;

[0031] 133: First side;

[0032] 134: Second side;

[0033] 135: Sensing material;

[0034] 140: Second electrode;

[0035] 141: Second electrode material;

[0036] 141a: Pattern of the second electrode material;

[0037] 150: Insulation layer;

[0038] 160: Signal line;

[0039] 170: Insulation layer;

[0040] 210: First photoresist pattern;

[0041] 220: Second photoresist pattern;

[0042] 220a: Third photoresist pattern;

[0043] 210a: Fourth photoresist pattern;

[0044] 230: Fifth photoresist pattern;

[0045] A: Region;

[0046] D1, D2, D3: Distance;

[0047] DL: Data cable;

[0048] GE: Gate;

[0049] GI: Gate insulating layer;

[0050] L1, L2, L3, L4, L5, L6, L7: Length;

[0051] PX: Sensing pixel

[0052] R: Groove;

[0053] SD1: Source;

[0054] SD2: Drain;

[0055] SE: Semiconductor;

[0056] SL: Scan line;

[0057] X: First direction;

[0058] Y: Second direction;

[0059] Z: Third-party. Detailed Implementation

[0060] This disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for ease of understanding and for the sake of brevity, many of the drawings in this disclosure depict only a portion of the electronic device, and certain components in the drawings are not drawn to scale. Furthermore, the number and dimensions of the components in the drawings are for illustrative purposes only and are not intended to limit the scope of this disclosure.

[0061] In the following description and claims, the words “containing” and “including” are open-ended terms, and therefore should be interpreted as “containing but not limited to…”.

[0062] It should be understood that when an element or membrane is referred to as being "on" or "connected" to another element or membrane, it can be directly on or directly connected to that other element or membrane, or there may be an inserted element or membrane between them (indirect cases). Conversely, when an element is referred to as being "directly" on or "directly connected" to another element or membrane, there may be no inserted element or membrane between them.

[0063] Although the terms "first," "second," "third," etc., can be used to describe multiple components, the components are not limited to these terms. These terms are used only to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but rather replaced by "first," "second," "third," etc., according to the order of the elements declared in the claims. Therefore, in the following description, a first component may be a second component in the claims.

[0064] In this text, the terms "about," "approximately," "substantially," and "roughly" typically indicate that a given value or range is within 10%, 5%, 3%, 2%, 1%, or 0.5%. The given quantities are approximate; that is, even without specific mention of "about," "approximately," "substantially," or "roughly," their meanings are implied. Furthermore, the phrases "ranging from the first value to the second value" or "ranging between the first value and the second value" indicate that the range includes the first value, the second value, and other values ​​in between.

[0065] In some embodiments of this disclosure, terms such as "connection" and "interconnection," unless specifically defined, may refer to two structures in direct contact, or to two structures not in direct contact, with other structures disposed between them. Furthermore, these terms may include situations where both structures are movable or both structures are fixed. Additionally, the term "coupled" includes any direct or indirect electrical connection means.

[0066] The sensing device disclosed herein can be used in X-ray sensors or fingerprint readers, but is not limited thereto. Furthermore, the sensing device includes a bendable, flexible sensing device. The shape of the sensing device can be rectangular, circular, polygonal, with curved edges, or other suitable shapes. The sensing device may have peripheral systems such as a drive system, a control system, a shelving system, etc., to support the X-ray sensor or fingerprint reader. The following description uses the sensing device as an example, but this disclosure is not limited thereto.

[0067] It should be understood that the following embodiments can be deconstructed, replaced, recombined, or mixed with features from several different embodiments to complete other embodiments without departing from the spirit of this disclosure. Features between embodiments can be arbitrarily mixed and combined as long as they do not violate the spirit of the invention or conflict with it.

[0068] Reference will now be made in detail to exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element references are used in the drawings and description to denote the same or similar parts.

[0069] Figure 1A This is a top view schematic diagram of a sensing device according to an embodiment of the present disclosure. Figure 1B for Figure 1A A schematic cross-sectional view of the sensing device along section line I-I'. Figure 1C for Figure 1B An enlarged schematic diagram of region A. Figure 1D for Figure 1A A schematic diagram of the sensing device along section line Ⅱ-Ⅱ'. Figure 2 This is a flowchart illustrating a method for manufacturing a sensing device according to an embodiment of the present disclosure. Figures 3A to 3F This is a cross-sectional schematic diagram of a method for manufacturing a sensing device according to an embodiment of this disclosure. The drawings are for clarity and ease of explanation. Figure 1A ,as well as Figures 3A to 3F Several components of the sensing device are omitted from the diagram. The sensing device 10 may be, for example, an X-ray sensor, but is not limited thereto.

[0070] Please refer to Figure 1A and Figure 1BThe sensing device 10 of this embodiment includes a substrate 110 and a plurality of sensing pixels PX. Each sensing pixel PX includes at least one sensing unit 100. The sensing unit 100 includes a first electrode 120, a sensing layer 130, and a second electrode 140. The substrate 110 includes a base 111, a scan line SL, a data line DL, a transistor 112, and an insulating layer 113. In this embodiment, the base 111 may include a rigid substrate, a flexible substrate, or a combination thereof. For example, the material of the base 111 may include glass, quartz, sapphire, ceramics, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), other suitable materials, or combinations thereof, but is not limited thereto.

[0071] In this embodiment, transistor 112 is disposed on substrate 111. Transistor 112 includes a gate GE, a source SD1, a drain SD2, and a semiconductor SE, but is not limited thereto. The gate GE is disposed on substrate 111. Taking a bottom-gate type transistor as an example, a gate insulating layer GI is disposed on the gate GE to cover it. The semiconductor SE is disposed on the gate insulating layer GI and corresponds to the gate GE. The source SD1 and drain SD2 are respectively disposed on the gate insulating layer GI, and the source SD1 and drain SD2 are respectively coupled to the semiconductor SE. In this embodiment, the material of the semiconductor SE may include amorphous silicon, low-temperature polysilicon (LTPS), oxide semiconductor (e.g., indium gallium zinc oxide IGZO), other suitable materials, or combinations thereof, but is not limited thereto. In some embodiments, the transistor 112 structure may also be a top-gate type transistor, a double-gate type transistor, or other suitable transistors.

[0072] In this embodiment, scan lines SL are disposed on substrate 111 and coupled to the gate GE of transistor 112. Data lines DL are disposed on substrate 111 and coupled to the source SD1 of transistor 112, but are not limited thereto. The area between two adjacent scan lines SL and two adjacent data lines DL forms a sensing pixel PX.

[0073] In this embodiment, the first direction X, the second direction Y, and the third direction Z are different directions. For example, the first direction X is the extension direction of the scan line SL, the second direction Y is the extension direction of the data line DL, and the third direction Z is the normal direction of the substrate 111. The first direction X is approximately perpendicular to the second direction Y, and the first direction X and the second direction Y are approximately perpendicular to the third direction Z, but this is not a limitation.

[0074] In this embodiment, an insulating layer 113 is disposed on the gate insulating layer GI to cover the source SD1, the drain SD2, and the semiconductor SE. The insulating layer 113 has an opening 113a to expose a portion of the drain SD2. The insulating layer 113 can be a single-layer or multi-layer structure, and can include, for example, organic materials, inorganic materials (e.g., silicon nitride, silicon oxide, or silicon oxynitride), or combinations thereof, but is not limited thereto.

[0075] In this embodiment, the first electrode 120 is disposed on the insulating layer 113 of the substrate 110. The first electrode 120 may also be disposed within an opening 113a of the insulating layer 113 to couple to the drain electrode SD2. In a cross-section along a certain direction, the first electrode 120 may have a length to... Figure 1D For example, the first electrode 120 has a length L1. Here, length L1 is, for example, the maximum length of the first electrode 120 measured along the first direction X. Please also refer to... Figure 1C The first electrode 120 has sides 121 and 122 opposite to each other, with side 121 being closer to the transistor 112 than side 122. For example... Figure 1B As shown, in the first direction X, there is a distance D1 between the source electrode SD1 (or data line DL) and the first electrode 120. This distance D1 is, for example, the shortest distance in the first direction X between the source electrode SD1 and the side edge 121 of the first electrode 120. Furthermore, the material of the first electrode 120 may include transparent conductive materials or non-transparent conductive materials, such as indium gallium zinc oxide (IGZO), indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide, zinc oxide, tin oxide, metallic materials (e.g., aluminum, molybdenum, copper, titanium, silver, etc.), other suitable materials, or combinations thereof, but is not limited thereto.

[0076] In this embodiment, a sensing layer 130 is disposed on the first electrode 120 to be coupled to the first electrode 120. The sensing layer 130 may be a photoelectric semiconductor to detect the number of photons in incident light and generate an electrical signal, which can be output through the transistor 112. The sensing layer 130 may include a stacked structure composed of N-type semiconductors, intrinsic semiconductors, and P-type semiconductors, but is not limited thereto. In this embodiment, the sensing layer 130 has a first surface 131 adjacent to the first electrode 120, a second surface 132 opposite to the first surface 131, and first sidewalls 133 and second sidewalls 134 opposite to each other. The first sidewall 133 is closer to the transistor 112 than the second sidewall 134. In this embodiment, as Figure 1B and Figure 1C As shown, in the first direction X, there is a distance D2 between the first side 133 and the side 121 of the first electrode 120, and a distance D3 between the second side 134 and the side 122 of the first electrode 120. The distances D2 and D3 are, for example, between 0.1 micrometers (μm) and 5 micrometers, but are not limited thereto. Furthermore, in this embodiment, a groove R can be formed by the sensing layer 130, the first electrode 120, and the substrate 110. The two sides of the groove R can be the first surface 131 of the sensing layer 130 and the surface of the substrate 110 facing the sensing layer 130, respectively, and the bottom surface of the groove R can be either the side 121 or the side 122 of the first electrode 120.

[0077] like Figure 1D As shown, the first surface 131 of the sensing layer 130 has a length L2, and the second surface 132 has a length L4. The length L2 is, for example, the maximum length of the first surface 131 of the sensing layer 130 measured along a first direction X. In some embodiments, the length L2 of the first surface 131 is greater than the length L4 of the second surface 132. Furthermore, in this embodiment, the length L1 of the first electrode 120 is, for example, less than the length L2 of the first surface 131 of the sensing layer 130. For example, the difference between the length L1 of the first electrode 120 and the length L2 of the first surface 131 of the sensing layer 130 is, for example, between 0.1 micrometers and 10 micrometers, but is not limited thereto. Furthermore, in the top view schematic diagram of this embodiment (as shown...), Figure 1A As shown in the diagram, the area of ​​the sensing layer 130 is larger than the area of ​​the first electrode 120. In the cross-sectional view of this embodiment (as shown in the diagram), the area of ​​the sensing layer 130 is larger than the area of ​​the first electrode 120. Figure 1B As shown, the orthogonal projection of the sensing layer 130 onto the third direction Z is greater than the orthogonal projection of the first electrode 120 onto the substrate 111 onto the third direction Z.

[0078] Therefore, in this embodiment, by making the length L1 of the first electrode 120 smaller than the length L2 of the first surface 131 of the sensing layer 130, the area of ​​the sensing layer 130 of the sensing device 10 in this embodiment can be made larger than the area of ​​the first electrode 120 to increase the fill factor (i.e., the ratio of the area of ​​the sensing layer 130 to the area of ​​the sensing pixel PX) and improve the sensing sensitivity. It can also allow a distance D1 between the first electrode 120 and the source electrode SD1 (or the data line DL), and a distance between the first electrode 120 and the scan line SL, thereby reducing parasitic capacitance or electronic noise.

[0079] In this embodiment, the second electrode 140 is disposed on the sensing layer 130 to be coupled to the sensing layer 130. For example... Figure 1D As shown, the second electrode 140 has a length L3. The length L3 is, for example, the maximum length of the second electrode 140 measured along the first direction X. In this embodiment, the length L3 of the second electrode 140 is, for example, less than the length L4 of the second surface 132 of the sensing layer 130, but is not limited thereto. For example, the difference between the length L3 of the second electrode 140 and the length L4 of the second surface 132 of the sensing layer 130 is, for example, between 0.1 micrometers and 10 micrometers, but is not limited thereto. In this embodiment, when the length L3 of the second electrode 140 is less than the length L4 of the second surface 132 of the sensing layer 130, leakage current in the sensing unit 100 can be reduced.

[0080] Furthermore, in the top view diagram of this embodiment (e.g.) Figure 1A As shown in the diagram, the area of ​​the sensing layer 130 is larger than the area of ​​the second electrode 140. In the cross-sectional view of this embodiment (as shown in the diagram), the area of ​​the sensing layer 130 is larger than the area of ​​the second electrode 140. Figure 1B As shown, the orthogonal projection of the sensing layer 130 onto the third direction Z is greater than the orthogonal projection of the second electrode 140 onto the third direction Z. In this embodiment, the material of the second electrode 140 may be the same as that of the first electrode 120 described above, and will not be repeated here. In this embodiment, the materials of the first electrode 120 and the second electrode 140 may be different, but this is not a limitation. That is, in some embodiments, the materials of the first electrode 120 and the second electrode 140 may be the same as needed.

[0081] In this embodiment, an insulating layer 150 and / or an insulating layer 170 may also be included. The insulating layer 150 is disposed on the second electrode 140 to cover the substrate 110. In some embodiments, the insulating layer 150 may not fill the groove R or may partially fill the groove R, such that the insulating layer 150 has a gap with the side 121 (or side 122) of the first electrode 120 within the groove R. In some embodiments, the insulating layer 150 may fill the groove R, such that the insulating layer 150 is connected to the side 121 (or side 122) of the first electrode 120 within the groove R. The insulating layer 150 may have an opening 151 to expose a portion of the second electrode 140. In some embodiments, the insulating layer 150 may be a single-layer or multi-layer structure, and the material of the insulating layer 150 may be the same as that included in the aforementioned insulating layer 113, which will not be repeated here.

[0082] In this embodiment, signal line 160 is disposed on insulating layer 150. Signal line 160 may also be disposed within opening 151 of insulating layer 150 to couple to second electrode 140 and provide a voltage signal. Insulating layer 170 is disposed on signal line 160.

[0083] Then, please refer to the following: Figure 2 as well as Figures 3A to 3F The following will describe the fabrication methods of the first electrode 120, sensing layer 130, and second electrode 140 of the sensing unit 100 in the sensing device 10 of this embodiment:

[0084] First, please refer to Figure 2 and Figure 3A After providing the substrate 110, step S110 is performed to form a first electrode material 123 on the substrate 110. Next, step S120 is performed to form a first photoresist pattern 210 on the first electrode material 123, such that the first photoresist pattern 210 covers a portion of the first electrode material 123 and exposes another portion of the first electrode material 123. The first photoresist pattern 210 has a length L5, and the length L5 is, for example, the maximum length of the first photoresist pattern 210 measured along a first direction X.

[0085] Next, please refer to Figure 2 and Figure 3B In step S130, wet etching is performed on the first electrode material 123 to remove another portion of the first electrode material 123 exposed by the first photoresist pattern 210, and to form the first electrode material pattern 123a. Then, after forming the first electrode material pattern 123a, the first photoresist pattern 210 is removed.

[0086] Next, please refer to Figure 2 and Figure 3CIn step S140, sensing material 135 and second electrode material 141 are sequentially formed on substrate 110, and sensing material 135 covers first electrode material pattern 123a and substrate 110, and second electrode material 141 covers sensing material 135.

[0087] Next, please refer to Figure 2 and Figure 3D Step S150 is performed to form a second photoresist pattern 220 on the second electrode material 141, such that the second photoresist pattern 220 covers a portion of the second electrode material 141 and exposes another portion of the second electrode material 141. The second photoresist pattern 220 has a length L6, which is, for example, the maximum length of the second photoresist pattern 220 measured along the first direction X. In this embodiment, the length L5 of the first photoresist pattern 210 is, for example, greater than the length L6 of the second photoresist pattern 220, but is not limited thereto.

[0088] Next, please refer to Figure 2 and Figure 3E In step S160, wet etching is performed on the second electrode material 141 to remove another portion of the second electrode material 141 exposed by the second photoresist pattern 220, forming a second electrode material pattern 141a (i.e., the second electrode). At this time, the second photoresist pattern 220 and the second electrode material pattern 141a can cover a portion of the sensing material 135 and expose another portion of the sensing material 135. Next, in step S170, dry etching is performed on the sensing material 135 to remove another portion of the sensing material 135 exposed by the second electrode material pattern 141a, forming a sensing layer 130 (i.e., the sensing layer 130 is formed after the second electrode). In this embodiment, the dry etching in step S170 also removes a portion of the second photoresist pattern 220 to form a smaller third photoresist pattern 220a. In this embodiment, since the length L5 of the first photoresist pattern 210 is greater than the length L6 of the second photoresist pattern 220, the length L7 of the first electrode material pattern 123a can be greater than the length L2 of the first surface 131 of the sensing layer 130 and the length L3 of the second electrode material pattern 141a. The length L7 is, for example, the maximum length of the first electrode material pattern 123a measured along the first direction X. Furthermore, in this embodiment, the length L4 of the second surface 132 of the sensing layer 130 can be approximately equal to the length L3 of the second electrode material pattern 141a, but is not limited thereto.

[0089] Finally, please refer to Figure 2 and Figure 3FIn step S180, after forming the sensing layer 130 on the substrate 110, an etching solution can be used to wet-etch the first electrode material pattern 123a to form the first electrode 120 (i.e., the first electrode 120 is formed later than the sensing layer 130 and later than the second electrode). The length L1 of the first electrode 120 is less than the length L2 of the first surface 131 of the sensing layer 130, and the side 121 (or side 122) of the first electrode 120 is not flush with the first side 133 (or second side 134) of the sensing layer 130. The side 121 (or side 122) of the first electrode 120 can be recessed to directly below the sensing layer 130, so that the sensing layer 130, the first electrode 120, and the substrate 110 can form a groove R. The two sides of the groove R can be the first surface 131 of the sensing layer 130 and the surface of the substrate 110 facing the sensing layer 130, respectively, and the bottom surface of the groove R can be either the side 121 or the side 122 of the first electrode 120. Therefore, compared to... Figure 3E The length L7 of the first electrode material pattern 123a is greater than the length L2 of the first surface 131 of the sensing layer 130, because Figure 3F The length L1 of the first electrode 120 can be less than the length L2 of the first surface 131 of the sensing layer 130, which can reduce stray capacitance or electronic noise. Then, the third photoresist pattern 220a is removed to form the second electrode 140, thus completing the fabrication of the sensing unit 100 of this embodiment.

[0090] In the manufacturing method of the sensing device 10 in this embodiment, although the first electrode material pattern 123a is first fabricated using the first photoresist pattern 210, and the second electrode material pattern 141a and sensing layer 130 are fabricated on the first electrode material pattern 123a using the second photoresist pattern 220, and finally the first electrode material pattern 123a is patterned by wet etching to fabricate the first electrode 120, this disclosure does not limit the manufacturing method of the sensing device 10. As long as the sensing layer 130 with a length less than that of the first electrode material pattern 123a can be formed on the first electrode material pattern 123a first, and then the first electrode material pattern 123a can be etched into the first electrode 120 with a length less than the length L2 of the first surface 131 of the sensing layer 130.

[0091] Furthermore, in this embodiment, since the material of the second electrode material 141 can be different from that of the first electrode material 123, an etching solution that does not simultaneously wet-etch the second electrode material 141 and the first electrode material 123 can be selected. In step S180, only the first electrode material pattern 123a can be etched into the first electrode 120, but this is not a limitation. That is, in some embodiments, when the material of the second electrode material 141 is the same as that of the first electrode material 123, the selected etching solution can simultaneously wet-etch the second electrode material pattern 141a and the first electrode material pattern 123a. In step S180, the length L3 of the wet-etched second electrode material pattern 141a can be less than the length L4 of the second surface 132 of the sensing layer 130, such as... Figure 1D As shown.

[0092] Other embodiments will be listed below for illustration. It must be noted that the following embodiments use the component reference numerals and some content from the foregoing embodiments, where the same reference numerals represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments; these will not be repeated in the following embodiments.

[0093] Figures 4A to 4D This is a cross-sectional schematic diagram of a method for manufacturing a sensing device according to another embodiment of the present disclosure. Figures 4A to 4D The illustrated embodiments and Figures 3A to 3F The embodiments shown are similar, therefore, the same elements are indicated by the same reference numerals, and their details will not be described in detail. Figures 4A to 4D The illustrated embodiments and Figures 3A to 3F The difference in the embodiment shown is that, in the manufacturing method of this embodiment, a first electrode material 123, a sensing material 135 and a second electrode material 141 are first formed, then the second electrode material 141 and the sensing material 135 are etched in sequence to form a second electrode material pattern 141a and a sensing layer 130, and finally the first electrode material 123 is etched to form a first electrode 120.

[0094] Specifically, please refer to Figure 4A After the substrate 110 is provided, a first electrode material 123, a sensing material 135 and a second electrode material 141 are sequentially formed on the substrate 110.

[0095] Next, please refer to Figure 4B A first photoresist pattern 210 is formed on the second electrode material 141, such that the first photoresist pattern 210 can cover a part of the second electrode material 141 and expose another part of the second electrode material 141.

[0096] Next, please refer to Figure 4CFirst, wet etching is performed on the second electrode material 141 to remove another portion of the second electrode material 141 exposed by the first photoresist pattern 210, forming a second electrode material pattern 141a. At this time, without removing the first photoresist pattern 210, the first photoresist pattern 210 and the second electrode material pattern 141a can cover a portion of the sensing material 135 and expose another portion of the sensing material 135. Next, dry etching is performed on the sensing material 135 to remove another portion of the sensing material 135 exposed by the second electrode material pattern 141a, forming a sensing layer 130. At this time, the aforementioned dry etching also removes a portion of the first photoresist pattern 210 to form a smaller fourth photoresist pattern 210a.

[0097] Finally, please refer to Figure 4D After the sensing layer 130 is formed on the substrate 110 and without removing the fourth photoresist pattern 210a, the first electrode material 123 is wet-etched using an etchant to form the first electrode 120. Then, the fourth photoresist pattern 210a is removed, thus completing the fabrication of the sensing unit 100 of this embodiment.

[0098] In this embodiment, since the material of the second electrode material 141 is different from the material of the first electrode material 123, an etching solution can be used to etch only the first electrode material 123 into the first electrode 120 in step S180, but this is not a limitation. That is, in some embodiments, when the material of the second electrode material 141 is the same as the material of the first electrode material 123, the selected etching solution can simultaneously perform wet etching on the second electrode material pattern 141a and the first electrode material 123, so that the length L3 of the wet-etched second electrode 140 is less than the length L4 of the second surface 132 of the sensing layer 130, and the length L1 of the first electrode 120 is less than the length L2 of the first surface 131 of the sensing layer 130, such as... Figure 1D As shown.

[0099] Figures 5A to 5G This is a cross-sectional schematic diagram of a method for manufacturing a sensing device according to another embodiment of the present disclosure. Figures 5A to 5G The illustrated embodiments and Figures 3A to 3F The embodiments shown are similar, therefore, the same elements are indicated by the same reference numerals, and their details will not be described in detail. Figures 5A to 5G The illustrated embodiments and Figures 3A to 3FThe difference in the embodiment shown is that, in the manufacturing method of this embodiment, a first electrode material 123 is first formed and then etched to form a first electrode material pattern 123a. Next, a sensing material 135 is formed and then etched to form a sensing layer 130. Then, a second electrode material 141 is formed and then etched to form a second electrode material pattern 141a. Finally, the first electrode material pattern 123a is etched to form the first electrode 120.

[0100] Specifically, please refer to Figure 5A and Figure 5B After providing the substrate 110, a first electrode material 123 is formed on the substrate 110. Next, a first photoresist pattern 210 is formed on the first electrode material 123. Then, the first electrode material 123 is wet-etched to form a first electrode material pattern 123a. Next, the first photoresist pattern 210 is removed.

[0101] Next, please refer to Figure 5C and Figure 5D A sensing material 135 is formed on the first electrode material pattern 123a, so that the sensing material 135 covers the substrate 110 and the first electrode material pattern 123a. Next, a second photoresist pattern 220 is formed on the sensing material 135 and the sensing material 135 is dry etched to form a sensing layer 130. Then, the second photoresist pattern 220 is removed.

[0102] Next, please refer to Figure 5E and Figure 5F A second electrode material 141 is formed on the sensing layer 130, so that the second electrode material 141 covers the substrate 110, the first electrode material pattern 123a, and the sensing layer 130. Next, a fifth photoresist pattern 230 is formed on the second electrode material 141 and the second electrode material 141 is wet-etched to form the second electrode material pattern 141a.

[0103] Finally, please refer to Figure 5G After the second electrode material pattern 141a is formed on the substrate 110 and without removing the fifth photoresist pattern 230, the first electrode material pattern 123a can be wet-etched using an etching solution to form the first electrode 120. Then, the fifth photoresist pattern 230 is removed, thus completing the fabrication of the sensing unit 100 of this embodiment.

[0104] In this embodiment, since the material of the second electrode material 141 is different from the material of the first electrode material 123, an etching solution can be used to etch only the first electrode material pattern 123a into the first electrode 120 in step S180, but this is not a limitation. That is, in some embodiments, when the material of the second electrode material 141 is the same as the material of the first electrode material 123, the selected etching solution can simultaneously perform wet etching on both the second electrode material pattern 141a and the first electrode material pattern 123a, so that the length L3 of the wet-etched second electrode 140 is less than the length L4 of the second surface 132 of the sensing layer 130, and the length L1 of the first electrode 120 is less than the length L2 of the first surface 131 of the sensing layer 130, such as... Figure 1D As shown.

[0105] Figures 6A to 6F This is a cross-sectional schematic diagram of a method for manufacturing a sensing device according to another embodiment of the present disclosure. Figures 6A to 6F The illustrated embodiments and Figures 3A to 3F The embodiments shown are similar, therefore, the same elements are indicated by the same reference numerals, and their details will not be described in detail. Figures 6A to 6F The illustrated embodiments and Figures 3A to 3F The difference in the embodiment shown is that, in the manufacturing method of this embodiment, a first electrode material 123 and a sensing material 135 are first formed, then the sensing material 135 is etched to form a sensing layer 130, then a second electrode material 141 is formed and etched to form a second electrode 140, and finally the first electrode material 123 is etched to form a first electrode 120.

[0106] Specifically, please refer to Figure 6A After the substrate 110 is provided, the first electrode material 123 and the sensing material 135 are sequentially formed on the substrate 110.

[0107] Next, please refer to Figure 6B and Figure 6C A first photoresist pattern 210 is formed on the sensing material 135. Then, the sensing material 135 is dry-etched to form the sensing layer 130. At this time, the aforementioned dry etching also removes part of the first photoresist pattern 210 to form a smaller fourth photoresist 210a.

[0108] Next, please refer to Figure 6D and Figure 6E After removing the fourth photoresist pattern 210a, a second electrode material 141 is formed on the sensing layer 130, so that the second electrode material 141 covers the first electrode material 123 and the sensing layer 130. Next, a second photoresist pattern 220 is formed on the second electrode material 141, and so on. Figure 6FThe second electrode material 141 is wet-etched to form a second electrode material pattern 141a. Next, without removing the second photoresist 220, the first electrode material 123 is wet-etched using an etching solution to form the first electrode 120. Afterwards, the second photoresist pattern 220 is removed, thus completing the fabrication of the sensing unit 100 of this embodiment.

[0109] In this embodiment, since the material of the second electrode material 141 is different from the material of the first electrode material 123, an etching solution can be used to etch only the first electrode material 123 into the first electrode 120 in step S180, but this is not a limitation. That is, in some embodiments, when the material of the second electrode material 141 is the same as the material of the first electrode material 123, the selected etching solution can simultaneously perform wet etching on both the second electrode material 141 and the first electrode material 123, so that the length L3 of the wet-etched second electrode 140 is less than the length L4 of the second surface 132 of the sensing layer 130, and the length L1 of the first electrode 120 is less than the length L2 of the first surface 131 of the sensing layer 130, such as... Figure 1D As shown.

[0110] In summary, in the sensing device and manufacturing method of the present disclosure embodiments, by making the length of the first electrode smaller than the length of the first surface of the sensing layer (or making the area of ​​the first electrode smaller than the area of ​​the sensing layer), the sensing device of the present embodiment can increase the sensitivity of light sensing while still maintaining a distance between the first electrode and the source (or data line) or scan line, thereby reducing stray capacitance or electronic noise in the sensing device and manufacturing method of the present disclosure embodiments.

[0111] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this disclosure, and are not intended to limit them. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this disclosure.

Claims

1. A sensing device, characterized in that, include: substrate; A first electrode is disposed on the substrate; A sensing layer is disposed on the first electrode and has a first surface adjacent to the first electrode; as well as The second electrode is disposed on the sensing layer. The length of the first electrode is less than the length of the first surface of the sensing layer. The sensing layer has a second surface adjacent to the second electrode, and the length of the second electrode is less than the length of the second surface.

2. The sensing device according to claim 1, characterized in that, The length difference between the first electrode and the first surface is between 0.1 micrometers and 10 micrometers.

3. The sensing device according to claim 1, characterized in that, The material of the first electrode is different from that of the second electrode.

4. The sensing device according to claim 1, characterized in that, The material of the first electrode is the same as that of the second electrode.

5. A method for manufacturing a sensing device, characterized in that, include: Provide substrate; A sensing layer is formed on the substrate; A first electrode is formed on the substrate, such that the first electrode is disposed between the sensing layer and the substrate; as well as A second electrode is formed on the sensing layer. The sensing layer has a first surface adjacent to the first electrode, and the length of the first electrode is less than the length of the first surface of the sensing layer. The sensing layer has a second surface adjacent to the second electrode, and the length of the second electrode is less than the length of the second surface.

6. The method for manufacturing the sensing device according to claim 5, characterized in that, The first electrode is formed later than the sensing layer.

7. The method for manufacturing the sensing device according to claim 5, characterized in that, The sensing layer is formed after the second electrode.

8. The method for manufacturing the sensing device according to claim 5, characterized in that, The first electrode is formed later than the second electrode.

9. The method for manufacturing the sensing device according to claim 7, characterized in that, The material of the first electrode is the same as that of the second electrode.

10. The method for manufacturing the sensing device according to claim 7, characterized in that, The material of the first electrode is different from that of the second electrode.

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