Photomask and method for manufacturing the same

Abstract

A photomask and a manufacturing method thereof, wherein the photomask comprises a transparent substrate, a plurality of discrete anti-reflection pattern layers on the surface of the transparent substrate, the material of the anti-reflection pattern layers comprising at least two metal elements and a silicon element, the two metal elements comprising a first main group metal element and a transition metal element, and corresponding shielding patterns on the plurality of discrete anti-reflection pattern layers. The material of the anti-reflection pattern layers in the application comprises at least two metal elements and a silicon element, the two metal elements comprising a first main group metal element and a transition metal element. Through the anti-reflection pattern layer of this specific material, not only can the light irradiated to the back of the shielding pattern be eliminated, but also the shielding pattern can be prevented from falling off from the surface of the transparent substrate at room temperature and high temperature.

Description

Technical Field

[0001] This application relates to the field of photomasks, and more particularly to a photomask that can prevent the generation of static electricity and a method for manufacturing the same. Background Technology

[0002] Photolithography is an indispensable and crucial technology in integrated circuit manufacturing. The photolithography process typically includes the following steps: first, a photoresist or other photosensitive material is coated onto the wafer surface; after the photoresist material dries, a mask pattern on a photomask is exposed onto the photoresist photosensitive material using a specific light source through an exposure machine; subsequently, the photoresist photosensitive material is developed with a developer, forming a photoresist pattern on the wafer surface. This photoresist pattern serves as a mask pattern in subsequent ion implantation or etching processes.

[0003] Existing photomask protective film structures generally include: a transparent substrate; several discrete masking patterns (or photomask patterns) formed on the surface of the transparent substrate; an annular frame on the surface of the transparent substrate, the annular frame surrounding the masking patterns; and a protective film on the top surface of the annular frame, the protective film and the annular frame being used to seal the photomask.

[0004] During the use of photomasks, the back of the masking pattern generally has a high reflectivity, which can easily cause problems such as glare and ghosting. This can have an adverse effect on the imaging of the pattern transferred onto the wafer. In addition, there is a large stress between the masking pattern and the transparent substrate, which makes the masking pattern easy to fall off. Summary of the Invention

[0005] Some embodiments of this application provide a method for fabricating a photomask, including: Provide transparent substrates; A plurality of discrete anti-reflective patterned layers are formed on the surface of the transparent substrate. The material of the anti-reflective patterned layers includes at least two metal elements and silicon, wherein the two metal elements include a first group metal element and a transition metal element. A masking pattern is formed on the discrete anti-reflection patterns.

[0006] In some embodiments, the material of the anti-reflective patterned layer further includes a gaseous atmosphere element.

[0007] In some embodiments, the total content of the two metal elements and silicon element in the material of the anti-reflective patterned layer is greater than 90%.

[0008] In some embodiments, the gaseous atmosphere element is one or more of oxygen, nitrogen, carbon, helium, hydrogen, and krypton.

[0009] In some embodiments, the first main group metal element includes lithium, sodium, potassium, rubidium, or cesium, and the transition metal element includes ruthenium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, scandium, rhodium, or cadmium.

[0010] In some embodiments, the content of the transition metal element in the material of the anti-reflective patterned layer is 40%-60%, the content of the first group metal element is 20%-30%, and the content of silicon element is 20%-30%.

[0011] In some embodiments, the thickness of the anti-reflective patterned layer is 1 nm - 10 nm.

[0012] In some embodiments, the material of the anti-reflective pattern layer is , where x, y, and z are all greater than 0.

[0013] In some embodiments, the formation process of the anti-reflective patterned layer includes: activating the transparent substrate using oxygen-containing plasma; providing a sputtering target, wherein the sputtering target is a mixed target of Li, Si, and Ru; and performing a sputtering process using the mixed target of Li, Si, and Ru to form a pattern on the surface of the transparent substrate. Thin film; etching the The thin film forms several discrete anti-reflective patterned layers.

[0014] In some embodiments, forming the After the film, in the A masking pattern film is formed on the surface of the thin film; a patterned mask layer is formed on the surface of the masking pattern film; using the patterned mask layer as a mask, the masking pattern film and... The thin film forms several discrete anti-reflective patterned layers and masking patterns located on the corresponding anti-reflective patterned layers.

[0015] In some embodiments, during the activation process, O2 is introduced into the chamber and dissociated to form plasma, wherein the flow rate of the introduced O2 is 3 cm³. 3 / min-6cm 3 / min, bias power is 100W - 200W.

[0016] In some embodiments, after the activation process, the surface roughness Ra of the transparent substrate is 0.1-2.3 nm.

[0017] In some embodiments, the elemental ratio of Li, Si, and Ru in the Li, Si, and Ru mixed target can be 1:1:2, and the sputtering power is 18-22KW. During sputtering, N2 and a rare gas are used as a protective gas atmosphere, and the rare gas is one of He, Ar, and Kr. The molar ratio of N2 to the rare gas can be 1:6-1:3.

[0018] Some embodiments of this application also provide a photomask, including: Transparent substrate; A plurality of discrete anti-reflective patterned layers are located on the surface of the transparent substrate, wherein the material of the anti-reflective patterned layers includes at least two metal elements and silicon, wherein the two metal elements include a first group metal element and a transition metal element; The corresponding masking pattern located on the plurality of discrete anti-reflection patterns.

[0019] In some embodiments, the material of the anti-reflective patterned layer further includes a gaseous atmosphere element.

[0020] In some embodiments, the total content of the two metal elements and silicon element in the material of the anti-reflective patterned layer is greater than 90%.

[0021] In some embodiments, the gaseous atmosphere element is one or more of oxygen, nitrogen, carbon, helium, hydrogen, and krypton.

[0022] In some embodiments, the first main group metal element includes lithium, sodium, potassium, rubidium, or cesium, and the transition metal element includes ruthenium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, scandium, rhodium, or cadmium.

[0023] In some embodiments, the content of the transition metal element in the material of the anti-reflective patterned layer is 40%-60%, the content of the first group metal element is 20%-30%, and the content of silicon element is 20%-30%.

[0024] In some embodiments, the thickness of the anti-reflective patterned layer is 1 nm - 10 nm.

[0025] In some embodiments, the material of the anti-reflective pattern layer is , where x, y, and z are all greater than 0.

[0026] In some embodiments, the surface roughness Ra of the transparent substrate is 0.1-2.3 nm.

[0027] The photomask in some of the foregoing embodiments of this application includes a transparent substrate; a plurality of discrete anti-reflective patterned layers on the surface of the transparent substrate, wherein the material of the anti-reflective patterned layers includes at least two metal elements and silicon, wherein the two metal elements include a first group metal element and a transition metal element; The photomask of this application has a corresponding masking pattern located on the plurality of discrete anti-reflective patterns. An anti-reflective pattern layer is provided between the masking pattern and the transparent substrate. The material of the anti-reflective pattern layer includes at least two metal elements and silicon. The two metal elements include a first group metal element and a transition metal element. This anti-reflective pattern layer, made of a specific material, not only eliminates light irradiating the back of the masking pattern, preventing glare and ghosting caused by light reflection from the back of the masking pattern, thus preventing adverse effects on the imaging of the pattern transferred to the wafer, but also, due to the presence of silicon in the anti-reflective pattern layer, improves the bonding performance and reduces stress between the anti-reflective pattern layer and the surface of the transparent substrate at both room temperature and high temperature (100℃-400℃). Furthermore, because the anti-reflective pattern layer contains one first group metal element and one transition metal element, the bonding performance and reduce stress between the anti-reflective pattern layer and the back of the masking pattern at both room temperature and high temperature (100℃-400℃), thereby preventing the masking pattern from detaching from the surface of the transparent substrate at both room temperature and high temperature. Attached Figure Description

[0028] Figures 1-4 This is a schematic diagram of the photomask fabrication process in some embodiments of this application. Detailed Implementation

[0029] The specific embodiments of this application will be described in detail below with reference to the accompanying drawings. In describing the embodiments of this application in detail, for ease of explanation, the schematic diagrams may be partially enlarged without adhering to the general scale, and the schematic diagrams are merely examples and should not limit the scope of protection of this application. Furthermore, in actual manufacturing, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0030] This application first provides a method for fabricating a photomask, and the photomask fabrication process will be described in detail below with reference to the accompanying drawings.

[0031] refer to Figure 1 A transparent substrate 201 is provided; an anti-reflective film 207 is formed on the surface of the transparent substrate 201.

[0032] The transparent substrate 201 serves as the carrier of the photomask. The transparent substrate 201 is made of a light-transmitting material with a light transmittance greater than 90%. In some embodiments, the transparent substrate 201 can be made of quartz glass or soda glass. In other embodiments, the transparent substrate 201 can also be made of fused silica, calcium fluoride, silicon nitride, titanium dioxide alloy, or sapphire.

[0033] The transparent substrate 201 includes a central region 21 and an edge region 22 surrounding the central region 21. The central region 21 may be square, circular, or other suitable shapes, and the edge region 22 is annular, surrounding the central region 21. The central region 21 may subsequently be used to form a masking pattern (or mask pattern) and an anti-reflective pattern layer. A phase-shifting layer may also be formed on the central region 21, and an annular frame may subsequently be formed on the edge region 22.

[0034] The anti-reflective film 207 is subsequently used to form a plurality of discrete anti-reflective patterned layers 205 (see reference). Figure 3 The antireflective film 207 (or the subsequently formed antireflective patterned layer 205) is made of at least two metal elements and silicon, wherein the two metal elements include a first group metal element and a transition metal element. Subsequently, a masking pattern 202 (see reference) is formed on the surface of the antireflective patterned layer 205. Figure 3 When the anti-reflective pattern layer 205 of this specific material is used, it can not only eliminate the light shining on the back of the shielding pattern 202, preventing glare, ghosting and other problems caused by light reflection from the back of the shielding pattern 202, thus preventing adverse effects on the imaging of the pattern transferred to the wafer, but also improve the bonding performance and reduce the stress between the anti-reflective pattern layer 205 and the surface of the transparent substrate 201 at room temperature and high temperature (100℃-400℃) due to the presence of silicon in the anti-reflective pattern layer 205. Furthermore, since the anti-reflective pattern layer 205 contains a first group metal element and a transition element, the bonding performance and stress between the anti-reflective pattern layer 205 and the back of the shielding pattern 202 are improved at room temperature and high temperature, thus preventing the shielding pattern 202 from falling off the surface of the transparent substrate 201 at room temperature and high temperature (100℃-400℃).

[0035] In some embodiments, the first main group metal element includes lithium, sodium, potassium, rubidium, or cesium, and the transition metal element includes ruthenium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, scandium, rhodium, or cadmium. The content of the transition metal element in the material of the anti-reflective patterned layer is 40%-60%, the content of the first main group metal element is 20%-30%, and the content of silicon is 20%-30%. The thickness of the anti-reflective film 207 (or the subsequently formed anti-reflective patterned layer 205) is 1 nm-10 nm. The anti-reflective pattern layer 205, with its specific material, element content, and thickness, not only better eliminates light illuminating the back of the shielding pattern 202, thus better preventing glare and ghosting caused by light reflection from the back of the shielding pattern 202, but also better prevents adverse effects on the imaging of patterns transferred to the wafer. Furthermore, because the anti-reflective pattern layer 205 contains a specific amount of silicon, the bonding performance between the anti-reflective pattern layer 205 and the surface of the transparent substrate 201 is higher and the stress is lower at both room temperature and high temperature. Additionally, because the anti-reflective pattern layer 205 contains a specific amount of a first group metal element and a specific amount of a transition element, the bonding performance between the anti-reflective pattern layer 205 and the back of the shielding pattern 202 is higher and the stress is lower at both room temperature and high temperature, thus better preventing the shielding pattern 202 from detaching from the surface of the transparent substrate 201 at both room temperature and high temperature.

[0036] In some embodiments, the material of the antireflective film 207 (or the subsequently formed antireflective patterned layer 205) further includes gaseous atmosphere elements. The total content of the two metal elements and silicon element in the material of the antireflective patterned layer is greater than 90%, and the content of the atmosphere elements is less than 10%. The atmosphere elements are those contained in the gaseous atmosphere during the formation of the reflective film 208.

[0037] In some embodiments, the gaseous atmosphere element is one or more of oxygen, nitrogen, carbon, helium, hydrogen, and krypton.

[0038] In this embodiment, the anti-reflective film 207 is The thin film, or the anti-reflective thin film 207 (or the subsequently formed anti-reflective patterned layer 205) material is... Where x, y, and z are all greater than 0. This specific material's anti-reflective pattern layer 205 has a good effect on eliminating light that shines on the back of the shielding pattern 202, and has good bonding performance with the transparent substrate 201 and the shielding pattern 202 while having low stress.

[0039] In one embodiment, the The formation process of the thin film (or anti-reflective thin film 207) includes: activating the transparent substrate 201 using oxygen-containing plasma; providing a sputtering target, wherein the sputtering target is a mixed target of Li, Si, and Ru; and performing a sputtering process using the mixed target of Li, Si, and Ru to form a film on the surface of the transparent substrate 201. Thin film (or anti-reflective film 207).

[0040] The purpose of using oxygen-containing plasma to activate the transparent substrate 201 is to enable Si to be deposited effectively on the transparent substrate 201, thereby improving the formation of... Improve the bonding performance of the thin film (or anti-reflective film 207) and reduce stress.

[0041] In one embodiment, during the activation process, O2 is introduced into the chamber and dissociated to form plasma, wherein the flow rate of the introduced O2 is 3 cm³. 3 / min-6cm 3 / min, bias power of 100W-200W, after the activation treatment, the surface roughness Ra of the transparent substrate 201 is 0.1-2.3nm. The smaller roughness can increase the surface energy of the transparent substrate 201, making it easier to deposit the anti-reflective film 207.

[0042] In one embodiment, the elemental ratio of Li, Si, and Ru in the Li, Si, and Ru mixed target can be 1:1:2, and the sputtering power is 18-22 kW. During sputtering, N2 and a rare gas are used as a protective gas atmosphere, and the rare gas is one of He, Ar, and Kr. The molar ratio of N2 to the rare gas can be 1:6-1:3.

[0043] refer to Figure 2 A masking pattern film 208 is formed on the surface of the anti-reflective film 207.

[0044] The masking pattern film 208 is subsequently used to form the masking pattern 202 (see reference). Figure 3 ).

[0045] In this embodiment, after the anti-reflective film 207 forms the masking pattern film 208, a subsequent masking step and an etching step can simultaneously form the anti-reflective pattern layer and the masking pattern located on the anti-reflective pattern layer, thereby saving process steps and improving the relative positional accuracy of the anti-reflective pattern layer and the masking pattern. In other embodiments, the anti-reflective pattern layer can be formed first on the surface of the transparent substrate 201 (i.e., after the anti-reflective film 207 is formed on the surface of the transparent substrate 201, for example...). After the film is formed, the anti-reflective film 207 is directly etched to form several discrete anti-reflective pattern layers, and then a masking pattern is formed on the surface of the anti-reflective pattern layer.

[0046] In this embodiment, the masking pattern film 208 is formed on the On the surface of the thin film.

[0047] The material of the masking pattern film 208 (or the subsequently formed masking pattern) is an opaque material. The masking pattern film 208 (or the subsequently formed masking pattern) can be a single-layer or multi-layer stacked structure (e.g., a stacked structure of two or more layers). In some embodiments, the material of the masking pattern film 208 (or the subsequently formed masking pattern) can be one or more of chromium, nickel, aluminum, ruthenium, molybdenum, titanium, or tantalum. In other embodiments, the material of the masking pattern film 208 (or the subsequently formed masking pattern) can also be one or more of chromium, nickel, aluminum, ruthenium, molybdenum, titanium, tantalum, chromium oxide, iron oxide, niobium oxide, chromium nitride, molybdenum trioxide, molybdenum nitride, chromium oxide, titanium nitride, zirconium nitride, titanium oxide, tantalum nitride, tantalum oxide, silicon dioxide, niobium nitride, silicon nitride, neutral alumina, and aluminum oxide.

[0048] In one embodiment, the masking pattern film 208 is formed by sputtering or deposition.

[0049] refer to Figure 3 Etching the masking pattern film 208 (reference) Figure 2 ) and the anti-reflective film 207 (reference) Figure 2 This forms several discrete anti-reflective graphic layers 205 and masking patterns 202 located on the corresponding anti-reflective graphic layers 205.

[0050] In some embodiments, during the etching of the masking pattern film 208 (reference 208) Figure 2 ) and the anti-reflective film 207 (e.g. (thin film) (reference) Figure 2 Before that, a patterned mask layer (not shown in the figure) is formed on the surface of the masking pattern film 208; using the patterned mask layer as a mask, the masking pattern film 208 and the anti-reflection film 207 are etched to form a plurality of discrete anti-reflection pattern layers 205 and masking patterns 202 located on the corresponding anti-reflection pattern layers 205.

[0051] In some embodiments, reference Figure 4 An annular frame 204 surrounding the shielding pattern is formed on the surface of the edge region of the transparent substrate 201; a protective film 206 is formed on the top surface of the annular frame 204 to close the space inside the annular frame 204.

[0052] The annular frame 204 is used to support the protective film that is subsequently formed. The annular frame 204 and the protective film that are subsequently formed can isolate the masking pattern 202 on the photomask 201 and the surface of the middle area of ​​the photomask 201 from the external environment, preventing pollution from the external environment.

[0053] The annular frame 204 is a hollow ring, and the material of the annular frame 204 is a material with a certain mechanical strength. In some embodiments, the material of the annular frame 204 is aluminum. In other embodiments, the material of the annular frame 204 can be aluminum alloy, ceramic, carbon steel, or other suitable metallic or non-metallic materials.

[0054] In some embodiments, the annular frame 204 is adhered to the edge region of the transparent substrate by an adhesive layer 203.

[0055] The material of the adhesion layer 203 is an organic adhesive. In some embodiments, the organic adhesive is a rubber adhesive, a polyurethane adhesive, an acrylic adhesive, a SEBS (styrene-vinyl butene-styrene) adhesive, a SEPS (styrene-vinyl propylene-styrene) adhesive, or a siloxane adhesive.

[0056] The protective film 206 is made of a light-transmitting material.

[0057] Some embodiments of this application also provide a photomask, see reference. Figure 4 ,include: Transparent substrate 201; A plurality of discrete anti-reflective patterned layers 205 are located on the surface of the transparent substrate 201. The material of the anti-reflective patterned layer 205 includes at least two metal elements and silicon element. The two metal elements include first group metal elements and transition metal elements. The corresponding occlusion pattern 202 is located on the plurality of discrete anti-reflection patterns 205.

[0058] The photomask of this application has an anti-reflective pattern layer 205 between the masking pattern 202 and the transparent substrate 201. The material of the anti-reflective pattern layer 205 includes at least two metal elements and silicon. The two metal elements include first group metal elements and transition metal elements. Through this anti-reflective pattern layer 205 made of a specific material, not only can light shining on the back of the masking pattern 202 be eliminated, preventing glare, ghosting and other problems caused by light reflection from the back of the masking pattern 202, but it can also prevent adverse effects on the imaging of the pattern transferred to the wafer. Furthermore, because the anti-reflective pattern layer 205... The presence of silicon in the anti-reflective pattern layer 205 improves the bonding performance and reduces stress between the anti-reflective pattern layer 205 and the surface of the transparent substrate 201 at both room temperature and high temperature (100℃-400℃). Furthermore, since the silicon in the anti-reflective pattern layer 205 contains a first group metal element and a transition element, the bonding performance and stress between the anti-reflective pattern layer 205 and the back surface of the shielding pattern 202 are improved and reduced at both room temperature and high temperature, thereby preventing the shielding pattern 202 from detaching from the surface of the transparent substrate 201 at both room temperature and high temperature (100℃-400℃).

[0059] In some embodiments, the first main group metal element includes lithium, sodium, potassium, rubidium, or cesium, and the transition metal element includes ruthenium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, scandium, rhodium, or cadmium. The content of the transition metal element in the material of the anti-reflective patterned layer 205 is 40%-60%, the content of the first main group metal element is 20%-30%, and the content of silicon is 20%-30%. The thickness of the anti-reflective patterned layer 205 is 1 nm-10 nm. The anti-reflective pattern layer 205, with its specific material, element content, and thickness, not only better eliminates light illuminating the back of the shielding pattern 202, thus better preventing glare and ghosting caused by light reflection from the back of the shielding pattern 202, but also better prevents adverse effects on the imaging of the pattern transferred to the wafer. Furthermore, because the anti-reflective pattern layer 205 contains a specific amount of silicon, the bonding performance between the anti-reflective pattern layer 205 and the surface of the transparent substrate 201 is higher and the stress is lower at both room temperature and high temperature. Additionally, because the anti-reflective pattern layer 205 contains a specific amount of a first-group metal element, the bonding performance between the anti-reflective pattern layer 205 and the back of the shielding pattern 202 is higher and the stress is lower at both room temperature and high temperature, thus better preventing the shielding pattern 202 from detaching from the surface of the transparent substrate 201 at both room temperature and high temperature.

[0060] In some embodiments, the material of the anti-reflective patterned layer 205 further includes a gaseous atmosphere element. The total content of the two metal elements and silicon element in the material of the anti-reflective patterned layer 205 is greater than 90%, and the content of the atmosphere element is less than 10%.

[0061] In some embodiments, the gaseous atmosphere element is one or more of oxygen, nitrogen, carbon, helium, hydrogen, and krypton.

[0062] In some embodiments, the material of the anti-reflective pattern layer 205 is , where x, y, and z are all greater than 0.

[0063] In some embodiments, the surface roughness Ra of the transparent substrate 201 is 0.1-2.3 nm. In some embodiments, it further includes: an annular frame 204 surrounding the shielding pattern located on the surface of the edge region of the transparent substrate 201; and a protective film 206 located on the top surface of the annular frame 204 to enclose the space inside the annular frame 204.

[0064] It should be noted that the limitations or descriptions of the same or similar parts in some embodiments of the photomask of this application and some embodiments of the aforementioned photomask formation method will not be repeated here. For details, please refer to the limitations or descriptions of the corresponding parts in some embodiments of the aforementioned photomask formation method.

[0065] Although this application has been disclosed above with reference to preferred embodiments, it is not intended to limit this application. Any person skilled in the art can make possible changes and modifications to the technical solutions of this application by utilizing the methods and techniques disclosed above without departing from the spirit and scope of this application. Therefore, any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall fall within the protection scope of the technical solutions of this application.

Claims

1. A method for fabricating a photomask, characterized in that, include: Provide transparent substrates; A plurality of discrete anti-reflective patterned layers are formed on the surface of the transparent substrate. The material of the anti-reflective patterned layers includes at least two metal elements and silicon. The two metal elements include a first group metal element and a transition metal element. The first group metal element includes lithium, sodium, potassium, rubidium or cesium. The transition metal element includes ruthenium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, scandium, rhodium or cadmium. A masking pattern is formed on the discrete anti-reflection patterns.

2. The method for fabricating a photomask as described in claim 1, characterized in that, The material of the anti-reflective patterned layer also includes gaseous atmosphere elements.

3. The method for fabricating a photomask as described in claim 2, characterized in that, The total content of the two metal elements and silicon element in the material of the anti-reflective patterned layer is greater than 90%.

4. The method for fabricating a photomask as described in claim 2, characterized in that, The gaseous atmosphere elements are one or more of oxygen, nitrogen, carbon, helium, hydrogen, and krypton.

5. The method for fabricating a photomask as described in claim 1, characterized in that, The material of the anti-reflective patterned layer contains 40%-60% transition metal elements, 20%-30% first group metal elements, and 20%-30% silicon elements.

6. The method for fabricating a photomask as described in claim 1 or 5, characterized in that, The thickness of the anti-reflective patterned layer is 1 nm - 10 nm.

7. The method for fabricating a photomask as described in claim 6, characterized in that, The material of the anti-reflective pattern layer is , where x, y, and z are all greater than 0.

8. The method for fabricating a photomask as described in claim 7, characterized in that, The formation process of the anti-reflective patterned layer includes: activating the transparent substrate using oxygen-containing plasma; providing a sputtering target, wherein the sputtering target is a mixture of Li, Si, and Ru; and performing a sputtering process using the mixture of Li, Si, and Ru target to form a pattern on the surface of the transparent substrate. Thin film; etching the The thin film forms several discrete anti-reflective patterned layers.

9. The method for fabricating a photomask as described in claim 8, characterized in that, Forming the After the film, in the A masking pattern film is formed on the surface of the thin film; a patterned mask layer is formed on the surface of the masking pattern film; using the patterned mask layer as a mask, the masking pattern film and... The thin film forms several discrete anti-reflective patterned layers and masking patterns located on the corresponding anti-reflective patterned layers.

10. The method for fabricating a photomask as described in claim 8, characterized in that, During the activation process, O2 is introduced into the chamber and dissociated to form plasma. The flow rate of the introduced O2 is 3 cm³. 3 / min-6cm 3 / min, bias power is 100W - 200W.

11. The method for fabricating a photomask as described in claim 10, characterized in that, After the activation treatment, the surface roughness Ra of the transparent substrate is 0.1-2.3 nm.

12. The method for fabricating a photomask as described in claim 8, characterized in that, The elemental ratio of Li, Si, and Ru in the Li, Si, and Ru mixed target is 1:1:2, and the sputtering power is 18-22KW. During sputtering, N2 and a rare gas are used as a protective gas atmosphere, and the rare gas is one of He, Ar, and Kr. The molar ratio of N2 to the rare gas is 1:6-1:

3.

13. A photomask, characterized in that, include: Transparent substrate; A plurality of discrete anti-reflective patterned layers are located on the surface of the transparent substrate. The material of the anti-reflective patterned layers includes at least two metal elements and silicon. The two metal elements include a first group metal element and a transition metal element. The first group metal element includes lithium, sodium, potassium, rubidium or cesium. The transition metal element includes ruthenium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, scandium, rhodium or cadmium. The corresponding masking pattern located on the plurality of discrete anti-reflection patterns.

14. The photomask as described in claim 13, characterized in that, The material of the anti-reflective patterned layer also includes gaseous atmosphere elements.

15. The photomask as described in claim 14, characterized in that, The total content of the two metal elements and silicon element in the material of the anti-reflective patterned layer is greater than 90%.

16. The photomask as described in claim 14, characterized in that, The gaseous atmosphere elements are one or more of oxygen, nitrogen, carbon, helium, hydrogen, and krypton.

17. The photomask as described in claim 13, characterized in that, The material of the anti-reflective patterned layer contains 40%-60% transition metal elements, 20%-30% first group metal elements, and 20%-30% silicon elements.

18. The photomask as described in claim 13 or 17, characterized in that, The thickness of the anti-reflective patterned layer is 1 nm-10 nm.

19. The photomask as described in claim 18, characterized in that, The material of the anti-reflective pattern layer is , where x, y, and z are all greater than 0.

20. The photomask as described in claim 19, characterized in that, The surface roughness Ra of the transparent substrate is 0.1-2.3 nm.

Images